JP4950280B2 - 高電力密度装置用、特にigbtおよびダイオード用の低インダクタンスのボンドワイヤレス共同パッケージ - Google Patents
高電力密度装置用、特にigbtおよびダイオード用の低インダクタンスのボンドワイヤレス共同パッケージ Download PDFInfo
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- JP4950280B2 JP4950280B2 JP2009505480A JP2009505480A JP4950280B2 JP 4950280 B2 JP4950280 B2 JP 4950280B2 JP 2009505480 A JP2009505480 A JP 2009505480A JP 2009505480 A JP2009505480 A JP 2009505480A JP 4950280 B2 JP4950280 B2 JP 4950280B2
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Description
この出願は、「高電力密度装置用、特にIGBTおよびダイオード用の低インダクタンスのボンドワイヤレス共同パッケージ(Low Inductance Bond- Wireless Co-package for
High Power Density Devices, Especially for IGBT's and Diodes)」と題されて2006年4月13日に出願された、米国仮出願連続番号第60/791,860号に基づいてその優先権を主張し、本願明細書で優先権主張がなされ、その開示は引用により援用される。
近代的な用途では、非常に小さなスペースにおいて、またしばしば、たとえばパッケージ寿命期間中の大きな温度変化などの厳しい環境において、大電流に対応する性能がますます要求されている。特に自動車業界では、電化機能の増加に起因して、大電流の需要が莫大に増加してきた。たとえばハイブリッド車の用途におけるインバータおよび電動モータ駆動部、スタータジェネレータとしての用途、高出力DC−DCコンバータ、または電気式パワーステアリングまたは電気ブレーキなどのエックス・バイ・ワイヤ(x-by-wire)への応用などがある。これらの用途は最小のスペース上で大電流を保つ性能を必要とし、達成可能な電力密度という意味で最先端技術のパワーモジュールに挑戦している。大電流を要する用途に対する現在の需要の大きさに応えるために、最先端技術のパワースイッチパッケージおよびパワーモジュールの熱的、電気的な限界を克服するよう、新技術を開発していく必要がある。
距離を最小限にすることにより、パッケージ抵抗を減じようとする。これは、いわゆるフリーホイーリングダイオードが対応するIGBTに低インダクタンス接続を用いて接続されるパワースイッチとしてIGBT装置を用いる応用例において、特に重要である。ダイオードはIGBTの「パートナー装置」であり、IGBTがオフのときに誘導電流を運び、誘導電流に起因するIGBTのブレークスルーを防ぐ。IGBTとダイオードとの典型的な組合せは図1に示される。
この発明の目的は、米国特許出願番号第11/641,270号に記載された応力の減じられた蹄鉄形DBC缶(DBC-can)の利点をすべて含む、共同パッケージング概念を与えることである。
i)パワーデバイスの応力の減じられた2面冷却。
iii)熱膨脹係数が一致することにより信頼性が増大。
i)ダイオードおよびIGBTが共有するコンタクトパッドに起因する低インダクタンス(装置間は最小距離かつ誘導ボンドワイヤがない)。
v)利用可能なパッケージスペースの効率的な使用およびそれによる電力の最適化。
i)あらかじめ組立てられて共同パッケージされた部品は取扱が容易でパワーモジュールへの組込みに適している。
i)エンドユーザが行う特定用途向けのカスタマイゼーションがなく、大量生産可能性が高い。
i)あらかじめ組立てられた離散的な部品共同パッケージは、最先端技術のパワー基板の熱膨脹係数と一致しており、したがって、種々様々の用途に有用である。
i)DBC缶の頂部のCu層を用いて付加的なEMIスクリーニング機能を実現することができる。
図2を参照して、この発明によるパッケージは、「高電力密度装置用パッケージ(Package for High Power Density Devices)」と題されてこの出願の譲受人に譲渡された同時係属の米国出願連続番号第11/641,270号に記載された、基本ビルディングブロック10を含み、その全開示が引用によって援用される。基本ビルディングブロック10(しばしば本願明細書でDBC缶と呼ばれる)は、誘電性セラミック体12(たとえばAl2O3)、セラミック体12の1つの表面に直接接合される金属体14、セラミック体12の対向する別の表面に直接接合される金属コネクタ16を含む。金属体14は、銅、アルミニウムなどの材料から形成される平らな金属ウェブであってもよい。金属コネクタ16は、銅、アルミニウムなどから形成されてもよく、長方形または正方形のウェブ部分18と、ウェブ部分18から(好ましくは垂直方向に)延在するリード部分20を含む。この発明の第1の実施例では、リード部分20は蹄鉄形状であって、1つの縁部は開けたままウェブ部分18の3つの縁部から延在する。好ましくは、ウェブ部分18は、半導体ダイの電極に対する電気接続用のダイ接続領域22、およびダイ接続領域22を囲む間隔を置いた複数の円形のくぼみ24を含む。くぼみ24はそれぞれ、ウェブ部分18に(エッチングなどの方法で)形成された凹部である。
電極は、電気的、機械的にウェブ部分18に接続され、かつ互いに電気的に接続されて、それによって低インダクタンスが達成される。くぼみ24は導電接着剤30に対する(た
とえばはんだが用いられる場合、リフローにおいて)バリヤとして機能し、それによってIGBTダイ26およびダイオード28がリード20およびIGBT26の組合せから間隔を置かれることができ、ダイオード28が保護され得ることに注意されたい。くぼみ24は、2つのダイス(図に示されない)の間のスペースを維持するように、ダイオード28とIGBT26との間に位置することができる。コレクタ電極の反対の表面に配置されるIGBT26のエミッタ電極32およびゲート電極34、およびカソード電極の反対の表面に配置されるダイオード28のアノード電極36が、回路基板などの導電パッド上にフリップ装着のために準備されるのが好ましい。本願明細書で用いられる、フリップ装着する、またはフリップ装着されるとは、導電接着剤本体(たとえばはんだ、導電エポキシなど)を用いて電気的、機械的に装着することを指し、そこでは導電接着剤本体は、ダイの電極と回路基板上の導電パッドとの間、またはリードフレームなどのダイ受取り領域に配置される。リード20は、ダイの電極26、28の自由表面と好ましくは面一の外部接続表面60を含み、、フリップ装着を通して、IGBT26のコレクタ電極およびダイオード28のカソード電極を回路基板の導電パッドに接続するよう機能することに注意されたい。
て電気的、機械的に金属体14に接続され、IGBTダイ26のコレクタ電極は、導電接着剤本体30を通してウェブ18に電気的、機械的に結合される。次いで、モジュールまたは集積装置における回路基板などの基板上にパッケージが組立てられると、IGBTダイ26のエミッタ電極がダイオード28のアノード電極に接続することができる。その接触を形成するために、Cuストライプ/クリップ、リードフレームまたは(好ましいオプションではないが)ボンドワイヤさえも用いることができる。パッケージのフリップ装着を容易にするために、エミッタ電極およびゲート電極がそれぞれはんだバンプ50を含むことに注意されたい。
械的に接続される。ウェブ部分68はウェブ部分66から分離されて間隔を置かれ、ウェブ部分66より厚い(少なくともダイオード28およびウェブ66の組合せより厚い)ことに注意されたい。コネクタ64はさらに、ウェブ68の縁部から延在するリード20と、コネクタ62のリード20の外部接続表面60に面一である外部接続表面とを含む。
・リード20に向かって縁部の分離を与えるのに十分であるべき分離用縁終端部/不動態化部をダイ上に与えることによる。(ウェーハプロセスレベルでのこの技術は、ラッカーを用いる機械的な分離手段よりもよりコスト効率が良い。)
「滑らかなはんだプロセス」、たとえばフラックスフリーはんだ(たとえば、フラックスのあるはんだペーストの代りの、はんだのプリフォーム)によって、また、DBC缶内でのダイスの大きな動きを回避し、正しいダイ配向を維持することを助ける、蟻酸ガス雰囲気下で真空はんだプロセスを用いることによる。
Claims (9)
- 少なくとも2つの半導体装置の活性電極に対する導電接着剤を用いた電気的、機械的な結合のために構成されたウェブ部分を有する金属体と、
前記ウェブ部分の縁部から延在して、前記半導体装置の前記活性電極をフリップ装着を通じて外部導電体に電気的に接続するための接続表面を含むコネクタ部分であって、前記接続表面が、前記活性電極とは反対側の前記少なくとも2つの半導体装置の表面と略面一である、コネクタ部分と、
前記ウェブ部分に電気的、機械的に結合される第1の半導体ダイおよび第2の半導体ダイと、
セラミック絶縁体の1つの表面で前記金属体の表面に直接接合されるセラミック絶縁体と、
前記セラミック絶縁体の対向する別の表面に直接接合される別の金属体とを含む、パワー半導体パッケージ。 - 前記金属体および前記別の金属体は銅で構成される、請求項1に記載のパワー半導体パッケージ。
- 前記セラミック絶縁体は酸化アルミニウムで構成される、請求項2に記載のパワー半導体パッケージ。
- 前記コネクタは蹄鉄形状である、請求項1に記載のパワー半導体パッケージ。
- 前記ウェブ部分の前記コネクタに対向する別の縁部から延在する別のコネクタをさらに含む、請求項1に記載のパワー半導体パッケージ。
- 前記第1の半導体装置はIGBTであって、前記第2の半導体装置がダイオードである、請求項1に記載のパワー半導体パッケージ。
- 前記ウェブ部分が、別の半導体装置の活性電極に対する導電接着剤を用いた電気的、機械的な接続のために構成される、請求項1に記載のパワー半導体パッケージ。
- 前記別の金属体は、別の半導体装置の活性電極に対する導電接着剤を用いた電気的、機械的な接続のために構成される、請求項1に記載のパワー半導体パッケージ。
- 前記活性電極は、IGBTのエミッタ電極、IGBTのコレクタ電極、およびゲート電極のうちの1つである、請求項1に記載のパワー半導体パッケージ。
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US79186006P | 2006-04-13 | 2006-04-13 | |
US60/791,860 | 2006-04-13 | ||
US11/786,388 US7554188B2 (en) | 2006-04-13 | 2007-04-11 | Low inductance bond-wireless co-package for high power density devices, especially for IGBTs and diodes |
US11/786,388 | 2007-04-11 | ||
PCT/US2007/009037 WO2007120769A2 (en) | 2006-04-13 | 2007-04-13 | Low inductance bond-wireless co-package for high power density devices, especially for igbts and diodes |
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US7648482B2 (en) | 2004-11-22 | 2010-01-19 | Intelliject, Inc. | Devices, systems, and methods for medicament delivery |
US7648483B2 (en) | 2004-11-22 | 2010-01-19 | Intelliject, Inc. | Devices, systems and methods for medicament delivery |
AU2004325202B2 (en) | 2004-11-22 | 2009-02-19 | Kaleo, Inc. | Devices, systems, and methods for medicament delivery |
US20080054496A1 (en) * | 2006-08-30 | 2008-03-06 | Neill Thornton | High temperature operating package and circuit design |
US8525334B2 (en) * | 2010-04-27 | 2013-09-03 | International Rectifier Corporation | Semiconductor on semiconductor substrate multi-chip-scale package |
JP5756911B2 (ja) * | 2010-06-03 | 2015-07-29 | パナソニックIpマネジメント株式会社 | 半導体装置およびこれを用いた半導体リレー |
US9088226B2 (en) | 2010-10-19 | 2015-07-21 | Electronics Motion Systems Holding Limited | Power module for converting DC to AC |
US8350376B2 (en) | 2011-04-18 | 2013-01-08 | International Rectifier Corporation | Bondwireless power module with three-dimensional current routing |
US9001518B2 (en) | 2011-04-26 | 2015-04-07 | International Rectifier Corporation | Power module with press-fit clamps |
US8804340B2 (en) | 2011-06-08 | 2014-08-12 | International Rectifier Corporation | Power semiconductor package with double-sided cooling |
US8987777B2 (en) | 2011-07-11 | 2015-03-24 | International Rectifier Corporation | Stacked half-bridge power module |
RU2497319C1 (ru) * | 2012-02-28 | 2013-10-27 | Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский университет "Высшая школа экономики" | Печатная плата для бортовой радиоэлектронной аппаратуры космических аппаратов |
JP5357315B1 (ja) * | 2012-09-19 | 2013-12-04 | マイクロモジュールテクノロジー株式会社 | 半導体装置 |
CN103022022A (zh) * | 2012-12-25 | 2013-04-03 | 浙江大学 | 一种低寄生电感的igbt功率模块 |
US9536800B2 (en) | 2013-12-07 | 2017-01-03 | Fairchild Semiconductor Corporation | Packaged semiconductor devices and methods of manufacturing |
WO2016081535A1 (en) | 2014-11-18 | 2016-05-26 | General Electric Company | Bus bar and power electronic device with current shaping terminal connector and method of making a terminal connector |
FR3054929A1 (fr) * | 2016-08-05 | 2018-02-09 | Commissariat Energie Atomique | Procede d'encapsulation d'un circuit integre avec une puce a transistor a heterojonction horizontal |
US9972607B2 (en) | 2016-08-08 | 2018-05-15 | Semiconductor Components Industries, Llc | Semiconductor device and method of integrating power module with interposer and opposing substrates |
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JP2009533871A (ja) | 2009-09-17 |
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