WO2017154453A1 - ボンディングワイヤ - Google Patents
ボンディングワイヤ Download PDFInfo
- Publication number
- WO2017154453A1 WO2017154453A1 PCT/JP2017/004771 JP2017004771W WO2017154453A1 WO 2017154453 A1 WO2017154453 A1 WO 2017154453A1 JP 2017004771 W JP2017004771 W JP 2017004771W WO 2017154453 A1 WO2017154453 A1 WO 2017154453A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- mass
- wire
- fab
- bonding wire
- less
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Definitions
- the present invention relates to a bonding wire mainly composed of Ag (silver).
- Bonding wires used for connecting the electrodes on the semiconductor element and the electrodes on the substrate are generally very thin, and are therefore made of a metal material having good conductivity and excellent workability.
- bonding wires mainly composed of Au gold
- the conventional bonding wire mainly composed of Au is very expensive since 99% or more of the mass is Au. Therefore, bonding wires mainly composed of Ag, which is cheaper than Au, have been proposed (for example, Patent Documents 1 and 2 below).
- Ag has a higher light reflectance than Au, and there is an advantage that the luminous efficiency can be improved when a bonding wire containing Ag as a main component is used for connecting light emitting elements such as LEDs.
- the present invention has been made in view of the above circumstances, and in a bonding wire mainly composed of Ag, it is possible to improve wire drawing workability, FAB formability, and heat resistance while suppressing a decrease in light reflectance. With the goal.
- the bonding wire of the present invention has a total content of one or two elements selected from Au and Pd of 0.5% by mass or more and 1.0% by mass or less. Is 50 mass ppm or more and 100 mass ppm or less, and the balance is made of Ag.
- the Au content of the bonding wire according to the present invention can be 0.5 mass% or more and 1.0 mass% or less.
- the Ca content of the bonding wire according to the present invention can be 60 mass ppm or more and 90 mass ppm or less.
- a bonding wire containing Ag as a main component it is possible to improve wire drawing workability, FAB formability, and heat resistance while suppressing a decrease in light reflectance.
- the bonding wire of this embodiment includes one or two elements selected from 0.5 mass% to 1.0 mass% of Au (gold) and Pd (palladium), and 50 mass ppm to 100 mass ppm.
- the following Ca (calcium) is contained, and the balance is made of Ag (silver).
- the wire diameter of the bonding wire may be various sizes depending on the application. For example, the wire diameter of the bonding wire can be 5 ⁇ m or more and 150 ⁇ m or less.
- Ag constituting the bonding wire may contain impurities inevitably present for purification, for example, Pd, Bi (bismuth), Cu (copper), Fe (iron), and the like.
- the specific resistance of the bonding wire is preferably equal to or lower than the specific resistance (3.0 ⁇ ⁇ cm) of 2N (purity 99%) Au bonding wire. From this viewpoint, it is preferable to produce an Ag alloy that constitutes the bonding wire using Ag having a purity of 99.9% by mass or more.
- Au and Pd can improve FAB formability and wire drawing workability.
- a FAB is produced using a bonding wire made of high purity Ag, it is difficult to stably obtain a FAB having a high sphericity.
- high-purity Ag tends to break when a rod-shaped ingot is drawn into a wire.
- the total content of Au and Pd is 0.5 mass. When it is at least%, FAB-forming properties can be improved and FAB with a high sphericity can be formed, and disconnection hardly occurs during wire drawing.
- the total content of Au and Pd exceeds 1.0% by mass, the amount of expensive noble metal used increases, and the light reflectance of the bonding wire decreases. If the total content of Au and Pd is 1.0% by mass or less, the content of the noble metal is low, and the manufacturing cost of the bonding wire can be suppressed, and the decrease in light reflectance can be suppressed.
- the total content of Au and Pd can be 0.5% by mass or more and 1.0% by mass or less, but Au can form a FAB having a high sphericity with a small amount of addition, and It is preferable to add more Au than Pd because it is difficult to be eccentric with respect to the bonding wire.
- the Au content is more preferably 0.5% by mass or more and 1.0% by mass or less.
- Ca can improve the heat resistance of the wire.
- a large region R of crystal grains called HAZ is generated in the wire portion immediately adjacent to the FAB due to heat at the time of FAB formation (see FIG. 1).
- a bonding wire made of high-purity Ag has low heat resistance and is easily affected by heat, and therefore has a long HAZ. Therefore, the bonding wire made of high-purity Ag has a large loop formed when the electrodes are connected. When the loop becomes large, the wire is likely to be bent, and the loop shape tends to be abnormal. However, even if it contains a trace amount of Ca, the heat resistance is improved, and HAZ is less likely to occur during FAB formation, so that the loop at the time of connection can be made into a good shape.
- the content of Ca is 50 mass ppm or more and 100 mass ppm or less. It is more preferable that it is 60 mass ppm or more and 90 mass ppm or less.
- the Ca content is 50 mass ppm or more, the heat resistance is improved, the length of the HAZ generated at the time of FAB formation is short, and it is difficult for the abnormality of the loop shape in which the wire bends to occur.
- the content of Ca is 60 mass ppm or more, the length of the HAZ can be further shortened.
- the Ca content is less than 100 ppm by mass, FAB having a high sphericity can be stably obtained.
- the connection can be reliably performed when stitch bonding is performed on the stud bump formed on the electrode.
- At least one element of Au and Pd is added to Ag with a purity of 99.9% by mass or more so that the total amount of Au and Pd is 0.5% by mass or more and 1.0% by mass or less.
- an Ag alloy added with 50 mass ppm or more and 100 mass ppm or less a rod-shaped ingot having a predetermined diameter is produced by a continuous casting method.
- the rod-shaped ingot is drawn to reduce the diameter until it reaches a predetermined diameter to obtain a bonding wire.
- the total content of Au and Pd is 0.5 mass% or more and 1.0 mass% or less
- the content of Ca is 50 massppm or more and 100 massppm or less
- the remainder is made of Ag. Therefore, while ensuring performance required for wire drawing workability, FAB formability, and heat resistance, the amount of elements other than Ag can be suppressed, and a decrease in light reflectance can be suppressed.
- the total content of one or two elements selected from Au and Pd is 0.5 mass% to 1.0 mass%, and the Ca content is 50 massppm to 100 mass%.
- the bonding wire which is not more than ppm and the balance is made of Ag and Ag unavoidable impurities has been described, but in addition to Ca, one or two selected from the group consisting of Ge, Cu, Bi, Y, La, and Sm You may contain 100 mass ppm or less of elements more than a seed
- the measurement results are shown by converting the light amount of each Example and Comparative Example into an index when the light amount of the LED connected with a pure silver wire is 100%.
- (3) FAB Formability For the bonding wires of Examples 1 to 12 and Comparative Examples 1 to 8, FAB having a wire diameter of 2.0 times the wire diameter is converted to nitrogen gas using a wire bonder (IConn, manufactured by K & S). It was produced in an atmosphere.
- IConn manufactured by K & S
- FAB formation 500 FABs were prepared for each of the bonding wires of Examples 1 to 12 and Comparative Examples 1 to 8, and then applied to a general-purpose electron microscope (JSM-6510LA, manufactured by JEOL Ltd.). The appearance was observed, and the lengths of the fabricated FAB in the wire parallel direction and the vertical direction were measured. The ratio (X / Y) of the length X of the FAB in the wire parallel direction to the length Y in the vertical direction is used as an index of true sphericity. The number of FABs judged to be spherical was counted. The results show the ratio of the number of FABs judged to have true sphericity to the 500 FABs produced.
- JSM-6510LA general-purpose electron microscope
Abstract
Description
(1)光反射率
同種のLEDに実施例1~12、比較例1~8及び純銀のボンディングワイヤを結線し、樹脂封止をして各実施例、比較例及び純銀のボンディングワイヤによって結線したLED素子を作製した。作製した素子をJIS C8152に規定の方法により全光束測定を行った。測定結果は、純銀のワイヤで結線したLEDの光量を100%としたときの各実施例、比較例の光量を指数に換算して示した。
(2)伸線加工時の断線回数(伸線加工性)
実施例1~12及び比較例1~8のボンディングワイヤについて、1kgのワイヤを直径50μmから直径20μmまで伸線した時に発生した断線回数をカウントした。
(3)FAB形成性
実施例1~12及び比較例1~8のボンディングワイヤに対して、ワイヤボンダー(K&S社製、IConn)にてワイヤ直径の2.0倍の大きさのFABを窒素ガス雰囲気で作製した。FAB形成性の評価としては、実施例1~12及び比較例1~8のボンディングワイヤ毎にFABを500個ずつ作製した後、汎用型電子顕微鏡(日本電子(株)製、JSM-6510LA)にて外観観察を行い、作製したFABのワイヤ平行方向と垂直方向の長さをそれぞれ測定した。FABのワイヤ平行方向の長さXと垂直方向の長さYの比(X/Y)を真球性の指標として、95%~100%であれば「真球性有り」と判断し、真球性有りと判断したFABの個数をカウントした。結果は、作製した500個のFABに対する真球性有りと判断したFABの個数の比率を示す。
(4)HAZ長さ
上記(3)においてFABを作製したワイヤを上記汎用型電子顕微鏡にて外観観察を行い、FAB直近のワイヤ部分に発生したHAZの長さを測定し、その平均値を算出した。
(5)偏芯発生率
上記(3)においてFAB1を作製したワイヤWを上記汎用型電子顕微鏡にて外観観察を行い、FAB1の重心位置CからワイヤWの中心軸Lまでのワイヤ垂直方向(ワイヤの短手方向)Pに沿った距離Dを計測した(図2参照)。計測した距離Dがワイヤ直径φwの0.1倍以上離れていたワイヤWを偏芯があると判断した。偏芯発生率は、作製した500個のFAB1に対する偏芯が発生した個数の比率を示す。
Claims (3)
- Au及びPdから選択された1種又は2種の元素の含有量の合計が0.5質量%以上1.0質量%以下であり、Caの含有量が50質量ppm以上100質量ppm以下であり、残部がAgからなるボンディングワイヤ。
- Auの含有量が0.5質量%以上1.0質量%以下である請求項1に記載のボンディングワイヤ。
- Caの含有量が60質量ppm以上90質量ppm以下である請求項1又は2に記載のボンディングワイヤ。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020187020870A KR102455208B1 (ko) | 2016-03-11 | 2017-02-09 | 본딩 와이어 |
JP2018504065A JP6359789B2 (ja) | 2016-03-11 | 2017-02-09 | ボンディングワイヤ |
CN201780012704.2A CN108701622B (zh) | 2016-03-11 | 2017-02-09 | 接合线 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016048738 | 2016-03-11 | ||
JP2016-048738 | 2016-03-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017154453A1 true WO2017154453A1 (ja) | 2017-09-14 |
Family
ID=59790333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2017/004771 WO2017154453A1 (ja) | 2016-03-11 | 2017-02-09 | ボンディングワイヤ |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP6359789B2 (ja) |
KR (1) | KR102455208B1 (ja) |
CN (1) | CN108701622B (ja) |
MY (1) | MY179434A (ja) |
TW (1) | TWI679290B (ja) |
WO (1) | WO2017154453A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113518687A (zh) * | 2019-04-26 | 2021-10-19 | 贺利氏材料新加坡有限公司 | 经涂覆线材 |
WO2022162716A1 (ja) * | 2021-01-26 | 2022-08-04 | 株式会社新川 | ワイヤボンディング装置、ワイヤボンディング装置の制御方法およびワイヤボンディング装置の制御プログラム |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014096403A (ja) * | 2012-11-07 | 2014-05-22 | Tatsuta Electric Wire & Cable Co Ltd | ボンディング用ワイヤ |
JP2014116387A (ja) * | 2012-12-07 | 2014-06-26 | Tanaka Electronics Ind Co Ltd | 白色発光ダイオード用ボンディングワイヤ |
JP2014179412A (ja) * | 2013-03-14 | 2014-09-25 | Tatsuta Electric Wire & Cable Co Ltd | ボンディング用ワイヤ |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5064577B2 (ja) * | 2011-01-20 | 2012-10-31 | タツタ電線株式会社 | ボールボンディング用ワイヤ |
KR101323246B1 (ko) * | 2011-11-21 | 2013-10-30 | 헤레우스 머티어리얼즈 테크놀로지 게엠베하 운트 코 카게 | 반도체 소자용 본딩 와이어, 그 제조방법, 반도체 소자용 본딩 와이어를 포함하는 발광다이오드 패키지 |
JP5165810B1 (ja) * | 2012-09-12 | 2013-03-21 | 田中電子工業株式会社 | 銀金パラジウム系合金バンプワイヤ |
JP6343197B2 (ja) * | 2014-07-16 | 2018-06-13 | タツタ電線株式会社 | ボンディング用ワイヤ |
-
2017
- 2017-02-09 MY MYPI2018703140A patent/MY179434A/en unknown
- 2017-02-09 KR KR1020187020870A patent/KR102455208B1/ko active IP Right Grant
- 2017-02-09 JP JP2018504065A patent/JP6359789B2/ja active Active
- 2017-02-09 CN CN201780012704.2A patent/CN108701622B/zh active Active
- 2017-02-09 WO PCT/JP2017/004771 patent/WO2017154453A1/ja active Application Filing
- 2017-02-15 TW TW106104906A patent/TWI679290B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014096403A (ja) * | 2012-11-07 | 2014-05-22 | Tatsuta Electric Wire & Cable Co Ltd | ボンディング用ワイヤ |
JP2014116387A (ja) * | 2012-12-07 | 2014-06-26 | Tanaka Electronics Ind Co Ltd | 白色発光ダイオード用ボンディングワイヤ |
JP2014179412A (ja) * | 2013-03-14 | 2014-09-25 | Tatsuta Electric Wire & Cable Co Ltd | ボンディング用ワイヤ |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113518687A (zh) * | 2019-04-26 | 2021-10-19 | 贺利氏材料新加坡有限公司 | 经涂覆线材 |
CN113518687B (zh) * | 2019-04-26 | 2023-03-10 | 贺利氏材料新加坡有限公司 | 经涂覆线材 |
WO2022162716A1 (ja) * | 2021-01-26 | 2022-08-04 | 株式会社新川 | ワイヤボンディング装置、ワイヤボンディング装置の制御方法およびワイヤボンディング装置の制御プログラム |
TWI817330B (zh) * | 2021-01-26 | 2023-10-01 | 日商新川股份有限公司 | 打線接合裝置、打線接合裝置的控制方法以及打線接合裝置的控制程式 |
Also Published As
Publication number | Publication date |
---|---|
JP6359789B2 (ja) | 2018-07-18 |
CN108701622B (zh) | 2021-12-10 |
MY179434A (en) | 2020-11-06 |
TW201800585A (zh) | 2018-01-01 |
TWI679290B (zh) | 2019-12-11 |
JPWO2017154453A1 (ja) | 2018-08-09 |
KR102455208B1 (ko) | 2022-10-14 |
CN108701622A (zh) | 2018-10-23 |
KR20180123472A (ko) | 2018-11-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5616165B2 (ja) | 銀ボンディングワイヤ | |
JP6359789B2 (ja) | ボンディングワイヤ | |
JP2010167490A (ja) | 合金ワイヤの製造方法およびその製品 | |
CN107904434A (zh) | 一种超细超长铜合金丝及其生产方法 | |
CN112342426A (zh) | 新型银合金键合丝及其制造方法 | |
CN106486447B (zh) | 铜合金接合线 | |
TWI802555B (zh) | 接合線 | |
JPH11222639A (ja) | 半導体構成素子を接触するための金合金からなる極細線およびその製造方法 | |
JPH0555580B2 (ja) | ||
CN103824833A (zh) | 半导体封装用的铜合金线 | |
WO2019151130A1 (ja) | ボンディングワイヤ | |
JP5166738B2 (ja) | 半導体素子接続用金線 | |
TWI643274B (zh) | Copper alloy thin wire for ball bonding | |
JP4641248B2 (ja) | 接合性、直進性および耐樹脂流れ性に優れたボンディングワイヤ用金合金線 | |
JP5258175B2 (ja) | 半導体素子用Auボンディングワイヤ | |
WO2016104121A1 (ja) | 銅ボンディングワイヤ | |
JP2706539B2 (ja) | ボンディングワイヤー | |
JP5339101B2 (ja) | バンプ用ワイヤ | |
JPS6278861A (ja) | 半導体素子のボンデイング用銅線 | |
JP3985743B2 (ja) | 半導体素子用ボンディングワイヤの製造方法および半導体素子用ボンディングワイヤ | |
JPS63241127A (ja) | 半導体装置のボンデイングワイヤ用Cu合金極細線 | |
JP2006128560A (ja) | ボンディングワイヤ | |
JPH07258807A (ja) | 電子機器用高力高導電性銅合金材の製造方法 | |
JPS63238233A (ja) | 銅細線とその製造法 | |
JPS6030160A (ja) | ボンデイングワイヤ− |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENP | Entry into the national phase |
Ref document number: 2018504065 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20187020870 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 17762797 Country of ref document: EP Kind code of ref document: A1 |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 17762797 Country of ref document: EP Kind code of ref document: A1 |