WO2017148208A1 - 表面波等离子体设备 - Google Patents

表面波等离子体设备 Download PDF

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Publication number
WO2017148208A1
WO2017148208A1 PCT/CN2016/112597 CN2016112597W WO2017148208A1 WO 2017148208 A1 WO2017148208 A1 WO 2017148208A1 CN 2016112597 W CN2016112597 W CN 2016112597W WO 2017148208 A1 WO2017148208 A1 WO 2017148208A1
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WIPO (PCT)
Prior art keywords
resonant cavity
dielectric
surface wave
dielectric member
wave plasma
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PCT/CN2016/112597
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English (en)
French (fr)
Chinese (zh)
Inventor
昌锡江
区琼荣
韦刚
黄亚辉
柏锦枝
Original Assignee
北京北方微电子基地设备工艺研究中心有限责任公司
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Application filed by 北京北方微电子基地设备工艺研究中心有限责任公司 filed Critical 北京北方微电子基地设备工艺研究中心有限责任公司
Priority to SG11201807555UA priority Critical patent/SG11201807555UA/en
Priority to KR1020187028111A priority patent/KR102097436B1/ko
Priority to JP2018546492A priority patent/JP6718972B2/ja
Publication of WO2017148208A1 publication Critical patent/WO2017148208A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H05H1/4615—Microwave discharges using surface waves

Definitions

  • the present invention relates to the field of semiconductor device manufacturing technology, and in particular to a surface wave plasma device.
  • Plasma devices are irreplaceable in the manufacturing process of integrated circuits or MEMS (Micro-Electro-Mechanical System) devices. Therefore, the development of high-performance plasma generating devices is crucial for the development of semiconductor manufacturing processes.
  • MEMS Micro-Electro-Mechanical System
  • the plasma device is used in a semiconductor manufacturing process, the most important factor to be investigated is that a large area of uniform plasma can be efficiently generated within a certain pressure range. Specific to the details of the process, the focus is often on the process gas, gas pressure, plasma uniformity, and the controllability of the particle composition within the plasma, ie, the plasma. For this reason, for a plasma source, a plasma source capable of exciting a large-area, high-density, uniform plasma at a low pressure is currently the main research direction.
  • CCP capacitive coupled plasma
  • ICP inductively coupled plasma
  • SWP surface wave
  • ECR Resonant plasma
  • Surface wave plasma is a new type of plasma generation technology developed in recent years. Compared with inductively coupled plasma, its structure is simpler and has advantages that can not be ignored in obtaining large-area and uniform plasma. Due to the mechanism of surface wave heating, the microwave energy is confined to the boundary between the plasma and the medium.
  • the plasma actually used is a remote plasma without the influence of the excitation source, so compared to the capacitively coupled plasma and the inductively coupled plasma, Its electronics
  • the lower temperature reduces the plasma damage to the device surface caused by high energy electrons.
  • Surface wave means that a microwave is excited near the surface of the medium to a plasma higher than the critical density of the surface wave, and the microwave rapidly decays along the normal direction in the plasma region of the medium, and forms a surface along the medium and the plasma. wave.
  • the surface wave can form a periodic strong electric field within the range of its transmission, thereby maintaining a high-density plasma, which is the principle of surface wave plasma formation.
  • the surface wave plasma device comprises: a microwave source and a microwave transmission matching structure, a surface wave antenna structure and a chamber.
  • the microwave source and the microwave transmission matching structure include: a microwave source.
  • the surface wave antenna structure includes an antenna main body 11, a retardation plate 12, a slit plate 15, and a dielectric plate 16 which are laminated in this order from top to bottom.
  • the antenna body 11 has a cylindrical shape and is usually made of a metal material such as aluminum or stainless steel.
  • the slot plate 15 is an antenna plate, which is mostly made of a metal material such as aluminum or stainless steel, and has a disk shape, and has a plurality of slit structures uniformly distributed from the inside to the outside, and each of the slit structures includes a plurality of slit structures.
  • the slits of the T-shaped structure and the slits of these T-shaped structures are evenly distributed in the circumferential direction.
  • the retardation plate 12 has a disk shape and is a low loss dielectric plate.
  • the medium may be Al2O3, SiO2 or SiN (silicon nitride compound).
  • Circularly polarized waves are generated on the 15 and circularly polarized waves are excited by the dielectric plate 16 in the vacuum chamber 19 to generate plasma.
  • the dielectric plate 16 is typically quartz.
  • the chamber includes a cavity 18, a seal ring 17 for sealing the cavity 18 and the antenna body 11, and a support table 21 for placing the wafer 20.
  • the surface wave antenna structure in the daughter device realizes microwave feeding by using a slit slotted antenna method, which is equivalent to a plasma source, and the microwave is fed in a coaxial manner when feeding, that is, from The central portion of the microwave self-latticulating plate 12 of the rectangular waveguide 8 enters the retardation plate 12, and is radiated in a radial direction in the retardation plate 12, and is gradually attenuated in the radial direction during transmission, resulting in the distribution of energy in the radial direction.
  • the area size of the portion of the plasma (hereinafter simply referred to as a uniform plasma) in which the distribution density in the generated plasma is uniform. Therefore, the area of the uniform plasma that can be generated by the surface-wave plasma device using the slot-slotted antenna in the microwave feeding mode can only be applied to the 8-inch-diameter wafer at the maximum, and it is impossible to achieve a larger size of 12 inches or the like. Industrial grade wafers of diameter are processed.
  • the present invention provides a surface wave plasma apparatus.
  • the present invention provides a surface wave plasma apparatus including a microwave generating device, a microwave transmission matching structure, and a vacuum chamber, which are sequentially connected, wherein the microwave transmission matching structure includes a rectangular waveguide for a transmission station.
  • the microwave generated by the microwave generating device is a microwave generating device, a microwave transmission matching structure, and a vacuum chamber, which are sequentially connected, wherein the microwave transmission matching structure includes a rectangular waveguide for a transmission station. The microwave generated by the microwave generating device.
  • the surface wave plasma device further includes a resonant cavity disposed between the rectangular waveguide and the vacuum chamber, and is in closed communication with the rectangular waveguide and sealingly connected to the vacuum chamber, and
  • the bottom wall of the resonant cavity is provided with a plurality of dielectric windows, the orthographic projection of the plurality of dielectric windows in the plane of the bottom surface of the vacuum chamber falling into the inner wall of the vacuum chamber is defined by the orthographic projection of the plane Within the scope to couple microwave energy into the vacuum chamber, respectively.
  • the terminal of the rectangular waveguide is in closed communication with the resonant cavity.
  • the middle section of the rectangular waveguide is in closed communication with the resonant cavity.
  • the plurality of dielectric windows are evenly distributed along the circumferential direction of the vacuum chamber.
  • the plurality of dielectric windows are arranged in such a manner as to be in the resonant cavity
  • a plurality of dielectric member setting holes are defined in the bottom wall, and a dielectric member having a shape matching therein is embedded in each of the dielectric member setting holes.
  • each of the dielectric members is one of the following shapes: a cylinder, a frustum, a combination of a plurality of cylinders, a combination of a plurality of frustums, a combination of a cylinder and a frustum.
  • the shape of the dielectric member when the shape of the dielectric member is a combination of a plurality of cylinders, the plurality of cylinders are coaxial with each other and stacked step by step, and the diameter of the lower-stage cylinder is not greater than the diameter of the upper-stage cylinder; Or when the shape of the dielectric member is a combination of a plurality of frustums, the plurality of frustums are coaxially and stacked one on another, and the diameter of the top surface of the lower frustum is not greater than that of the upper frustum The diameter of the bottom surface; or the shape of the dielectric member is a combination of a cylinder and a frustum, the cylinder and the frustum are coaxial with each other and stacked step by step, and the top surface of the lower stage cylinder/frustum The diameter is not greater than the diameter of the bottom surface of the upper cylinder/frustum.
  • the plurality of dielectric windows are arranged in such a manner that a plurality of dielectric member setting holes are formed in a bottom wall of the resonant cavity, between the bottom wall of the resonant cavity and the vacuum chamber
  • the dielectric member is disposed in a plate-like structure and capable of covering the plurality of dielectric member-providing holes; or a plurality of dielectric member-providing holes are formed in a bottom wall of the resonant cavity at the resonance
  • a dielectric member is disposed between the bottom wall of the cavity and the vacuum chamber, the dielectric member including a mounting plate and a plurality of dielectric blocks embedded in the mounting plate, each of the dielectric blocks being mounted along the mounting The thickness direction of the plate penetrates through the mounting plate, and the number and arrangement positions of the plurality of dielectric blocks are in one-to-one correspondence with the number and positions of the plurality of dielectric member setting holes.
  • the thickness of the dielectric member ranges from 5 to 80 mm.
  • the minimum diameter of the dielectric member ranges from 40 mm to 120 mm.
  • the surface wave plasma apparatus further includes a first probe disposed in a middle section of the rectangular waveguide and having one end extending into the resonant cavity for introducing microwaves in the rectangular waveguide Within the resonant cavity.
  • the other end of the first probe extends to the outside of the rectangular waveguide in a direction away from the resonant cavity.
  • the first probe is fixed by screwing or snapping or pinning.
  • the surface wave plasma device further comprises a connection cavity disposed between the microwave outlet of the rectangular waveguide and the microwave inlet of the resonant cavity, and is sealingly connected with the two, one end of the first probe Through the connecting cavity and extending into the resonant cavity.
  • the surface wave plasma device further comprises a short-circuiting piston disposed in a rear region of the rectangular waveguide and movable relative to the axis of the rectangular waveguide to adjust an effective path of the rectangular waveguide length.
  • the surface wave plasma device further includes a second probe extending along an axial direction of the resonant cavity, the upper end of which is fixed on the top wall of the resonant cavity or extends through the top wall of the resonant cavity to the Above the resonant cavity, the lower end is located inside the resonant cavity.
  • the second probe is arranged to be movable up and down relative to the bottom wall of the resonant cavity along the axial direction of the resonant cavity.
  • the setting position of the second probe corresponds to the medium window.
  • the number and position of the second probes correspond to the number and position of the dielectric window, and the orthographic projection of the second probe on the dielectric window corresponding thereto is coaxial with the dielectric window .
  • the distance between the edge of the orthographic projection of the second probe on the media window corresponding thereto and the edge of the dielectric window is not less than 2 cm.
  • a projection of the plurality of second probes on a bottom surface of the vacuum chamber is distributed at a center and a radius of a center of a bottom surface of the vacuum chamber a circumference of a plurality of different concentric circles; or in the case where the plurality of second probes are plural, a projection of the plurality of second probes on a bottom surface of the vacuum chamber is distributed in the vacuum chamber The center of the bottom surface of the chamber is on one circumference of the center of the circle.
  • the resonant cavity further comprises a lifting mechanism, the number of the lifting mechanism corresponding to the number of the circumferences, each of the lifting mechanisms for correspondingly driving all the second probes on the same circumference to rise synchronously Or synchronously descending; or the number of lifting mechanisms and said The number of second probes corresponds to each of the lifting mechanisms corresponding to one of the second probes and is used to drive the second probe to rise or fall.
  • each of the second probes is provided with an external thread, and a thread matching the external thread is provided at a position on the top wall of the resonant cavity where the second probe is disposed a hole, the threaded hole is a through hole or a blind hole, and the second probe is installed in the threaded hole in one-to-one correspondence, and the second probe is realized by rotating the second probe clockwise or counterclockwise The lifting of the needle relative to the bottom wall of the resonant cavity.
  • a vertical spacing between a lower end of the second probe and a bottom wall of the resonant cavity is not less than 10 mm.
  • the height of the resonant cavity is 10 mm to 200 mm.
  • the surface wave plasma device provided by the present invention is provided with a resonant cavity between the microwave transmission matching structure and the vacuum chamber, and a plurality of dielectric windows are arranged on the bottom wall of the resonant cavity, so that the microwave is in the resonant cavity
  • the electric field of the standing wave formed can be coupled into the vacuum chamber through a plurality of dielectric windows. Since each dielectric window can be equivalent to a plasma source, the surface wave plasma device provided by the present invention is equivalent to having multiple plasmas. The source simultaneously excites the plasma, thereby obtaining a large area of uniform plasma in the vacuum chamber, thereby meeting the needs of large-sized wafer processing.
  • 1a is a schematic structural view of a conventional surface wave plasma device
  • 1b is a schematic structural view of a conventional surface wave antenna slot plate
  • FIG. 2 is a schematic structural view of a surface wave plasma device according to a first embodiment of the present invention
  • Figure 3 is a plan view of the bottom wall of the resonant cavity
  • Figure 4 is a cross-sectional view showing the bottom wall of the resonant cavity taken along A-A' in Figure 3;
  • Figure 5 is a cross-sectional view showing the dielectric member and the dielectric member providing hole in a separated state
  • Figure 6A is a schematic view of a dielectric member of a two-column combined structure
  • 6B is a schematic view of a dielectric member of a two-stage frustum structure
  • 6C is a schematic view of another dielectric member of a two-stage frustum structure
  • 6D is a schematic view of a dielectric member of a combined structure of a cylinder and a frustum
  • 6E is a schematic view of another dielectric member of a combined structure of a cylinder and a frustum
  • 6F is a schematic view of another dielectric member of a combined structure of a cylinder and a frustum;
  • 6G is a schematic view of another dielectric member of a combined structure of a cylinder and a frustum
  • FIG. 7 is a schematic structural diagram of a surface wave plasma device according to a second embodiment of the present invention.
  • FIG. 8A is a top cross-sectional view of a first resonant mechanism employed in a second embodiment of the present invention.
  • FIG. 8B is a front cross-sectional view showing the first type of adjustment mechanism adopted by the first embodiment of the second embodiment of the present invention.
  • 8C is a front cross-sectional view showing a first type of adjustment mechanism adopted by the second embodiment of the present invention.
  • Figure 8D is a plasma distribution diagram obtained by the first adjustment method
  • Figure 8E is a plasma distribution diagram obtained by the second adjustment method
  • FIG. 9A is a top cross-sectional view of a second resonating mechanism employed in a second embodiment of the present invention.
  • 9B is a front cross-sectional view showing a second type of adjustment mechanism adopted by the second embodiment of the present invention.
  • 9C is a front cross-sectional view showing a second type of adjustment mechanism adopted by the second embodiment of the second embodiment of the present invention.
  • FIG. 10 is a schematic structural diagram of a surface wave plasma device according to a third embodiment of the present invention.
  • FIG. 11 is a schematic structural diagram of a surface wave plasma device according to a fourth embodiment of the present invention.
  • the invention provides a surface wave plasma device comprising a microwave generating device, a microwave transmission matching structure, a vacuum chamber and a resonant cavity which are sequentially connected, wherein: the microwave generating device is used for generating microwaves; and the microwave transmission matching structure comprises a rectangular waveguide.
  • the vacuum chamber is a process chamber requiring a plasma environment and having a predetermined degree of vacuum, such as a plasma reaction chamber, etc.;
  • the resonant cavity is used to generate a resonant mode of the microwaves therein to enable Is fed into the vacuum chamber 19, which is disposed between the rectangular waveguide and the vacuum chamber, and is in closed communication with the rectangular waveguide and sealingly connected to the vacuum chamber, and the bottom wall of the resonant cavity is provided with a plurality of dielectric windows.
  • the orthographic projection of the plurality of dielectric windows in the plane of the bottom surface of the vacuum chamber falls within the inner wall of the vacuum chamber within a range defined by the orthographic projection of the plane to respectively couple microwave energy into the vacuum chamber.
  • the "substrate wall of the resonant cavity is provided with a plurality of dielectric windows” should be understood as follows: the so-called “plurality” is not the total number of dielectric windows provided on the bottom wall of the resonant cavity, but an effective dielectric window.
  • the quantity, the so-called effective medium window refers to the dielectric window that can actually function as a plasma source during the process, that is, the dielectric window that can couple the microwave energy into the vacuum chamber. From the positional relationship, the effective medium
  • the orthographic projection of the window in the plane of the bottom surface of the vacuum chamber should fall within the inner wall of the vacuum chamber within the range defined by the orthographic projection of the plane, where "falling in” encompasses complete fall and partial fall.
  • closed communication refers to the resonant cavity and the rectangular wave.
  • the internal spaces of the two are connected to each other and the connection between the two is isolated from the external environment to seal the internal space of the two.
  • sealed connection it is meant that the internal space of the cavity and the vacuum chamber are not in communication and sealed at the junction of the two to isolate the internal space of the vacuum chamber from the external environment.
  • FIG. 2 is a schematic structural diagram of a surface wave plasma device according to a first embodiment of the present invention.
  • the surface wave plasma apparatus includes a microwave generating device, a microwave transmission matching structure, a connection chamber 10, a resonant cavity 22, and a vacuum chamber 19 which are sequentially connected.
  • the microwave generating device is configured to generate microwaves, which may include a microwave source power supply 1, a microwave source 2, and a resonator 3 that are sequentially connected.
  • the microwave source power supply 1 supplies power to the microwave source 2; the microwave source 2 can select a magnetron for generating microwaves; and the resonator 3 is used to form a resonant mode of the microwave.
  • the microwave transmission matching structure is for transmitting microwaves generated by the microwave generating device, which may include a cyclone 4, a directional coupler 6, an impedance adjusting unit 7, and a rectangular waveguide 8, which are sequentially connected, and the circulator 4 is also connected to the resonator 3 and the load 5 Connect separately.
  • microwave energy from the microwave generating device is transmitted via the cyclone 4, the directional coupler 6, and the rectangular waveguide 8.
  • the circulator 4 is used to isolate the microwave reflected from the downstream thereof from the microwave generating device, that is, the microwave reflected from the downstream of the circulator 4 is not reflected to the microwave generating device; the load 5 is used to absorb the rectangular shape The reflected power reflected from the waveguide 8; the directional coupler 6 is used to measure the incident power and the reflected power; the impedance adjusting unit 7 is used to adjust the resonant mode of the microwave; and the rectangular waveguide 8 is used to transmit the microwave.
  • the connecting cavity 10 is configured to provide a channel for the microwaves in the rectangular waveguide 8 to be transmitted to the resonant cavity 22, and has a cylindrical shape, the upper end opening is sealingly connected with the rectangular waveguide 8, and the lower end opening is sealingly connected with the resonant cavity 22, thereby realizing the rectangular waveguide 8 It is in closed communication with the resonant cavity 22.
  • a microwave outlet is formed on the lower surface of the middle portion of the rectangular waveguide 8 to cooperate with the connection cavity 10. The upper end opening of the connection cavity 10 is sealingly connected to the microwave outlet.
  • the cavity 22 is used to generate a resonant mode of the microwaves therein so as to be able to be fed into the vacuum chamber 19, which is a hollow cavity structure, disposed between the connection chamber 10 and the vacuum chamber 19, the top wall of which is opened There is a microwave inlet, and the lower end opening of the connection chamber 10 is sealingly connected to the microwave inlet.
  • the resonant cavity 22 is made of a metal such as stainless steel, aluminum alloy, or the like, and may be designed into a cavity of any shape such as a cylindrical shape, a rectangular shape, or a square shape, as the case may be.
  • a support table 21 for placing a workpiece to be processed such as a wafer is disposed in the vacuum chamber 19.
  • the vacuum chamber 19 is used to provide a vacuum environment and a plasma environment for the workpiece to be processed.
  • the vacuum chamber 19 may be a plasma etching chamber or the like.
  • the vacuum chamber 19 is usually made of a metal material such as aluminum alloy or stainless steel.
  • the core components such as the rectangular waveguide and the resonant cavity in the present invention will be described in more detail below.
  • the rectangular waveguide 8 is horizontally placed, its starting end is connected to the impedance adjusting unit 7, and its terminal end is a free end, wherein the lower surface of the segment area is provided with a microwave outlet for communicating with the connecting chamber 10.
  • a first probe 23 of a metallic material is disposed in the middle portion of the rectangular waveguide 8.
  • the first probe 23 is a screw probe, that is, the screw probe is disposed in the rectangular waveguide 8 by means of a screw connection (referred to as "screw").
  • the screw probe 23 sequentially penetrates the rectangular waveguide 8 and the connecting cavity 10 from the axial direction of the resonant cavity 22 from above the middle portion of the rectangular waveguide 8, and extends into the resonant cavity 22.
  • the short-circuiting piston 9 is provided in the rear-end region of the rectangular waveguide 8 so that its position on the rectangular waveguide 8 can be adjusted, that is, the position of the short-circuiting piston 9 in the axial direction of the rectangular waveguide 8 can be changed.
  • the microwave energy when microwave energy is transmitted axially in the terminal direction in the rectangular waveguide 8 and reaches the short-circuiting piston 9, the microwave energy is reflected back by the short-circuiting piston 9.
  • the length of the rectangular waveguide 8 between the starting end of the rectangular waveguide 8 and the short-circuiting piston 9 is referred to as the effective path of the rectangular waveguide 8, i.e., the actual transmission path when microwave energy is transmitted from the beginning end of the rectangular waveguide 8 to its terminal end.
  • the position of the short-circuiting piston 9 can be adjusted by the following arrangement and adjustment mode: the short-circuiting piston 9 is disposed inside the rectangular waveguide 8, and the cooperation between the two can be similar to that of the piston and the cylinder; The driving end of the short-circuiting piston 9 is disposed outside the rectangular waveguide 8, and under the action of the driving end, the short-circuiting piston 9 can be moved back and forth inside the rectangular waveguide 8, thereby realizing its positional adjustment on the rectangular waveguide 8.
  • the rectangular waveguide 8 can be selected from standard parts.
  • the standard rectangular waveguides corresponding to the commonly used 2450 MHz microwaves are: GB BJ-22, BB-22, BJ-26, and the cross-sectional dimensions of various types of rectangular waveguides are different.
  • GB BJ- can be selected.
  • 26 model rectangular waveguide.
  • a part of the microwave energy meets the screw probe 23 from the left side in the middle region of the rectangular waveguide 8 and changes the transmission direction, that is, the part of the microwave energy does not continue.
  • the axial transmission along the rectangular waveguide 8 is transmitted downward in the axial direction of the screw probe 23 and directly enters the left half of the cavity 22 via the connection cavity 10; the other part of the microwave energy does not meet the screw probe 23, and It is directly to the right side of the screw probe 23 and continues to be transmitted toward the terminal end of the rectangular waveguide 8, and is reflected back by the short-circuiting piston 9 when it reaches the short-circuiting piston 9.
  • a portion of the reflected microwave energy will pass over the screw probe 23 and be transmitted to and absorbed by the load 5 via the impedance adjusting unit 7, the directional coupler 6, and the circulator 4; the other portion of the reflected microwave energy from the right side and the screw
  • the probes 23 meet and change the direction of transmission, i.e., the portion of the microwave energy no longer continues to travel along the axial direction of the rectangular waveguide 8 but instead travels down the axial direction of the screw probe 23 and directly into the cavity 22 via the connection chamber 10. The right half.
  • the microwave energy in the rectangular waveguide 8 can be fed by means of the screw probe 23. Inside the cavity 22. Moreover, by adjusting the position of the short-circuiting piston 9 on the rectangular waveguide 8, the microwave energy fed into the left and right portions of the resonant cavity 22 can be balanced, and the microwave energy can be redistributed inside the resonant cavity, thereby feeding the microwave into the resonant cavity. The energy is homogenized to ensure a large area uniformity of plasma in the vacuum chamber.
  • the outer diameter dimension of the screw probe 23 and the inner diameter dimension of the connection cavity 10 are related to the transmission power (transmission efficiency) of the microwave, specifically, the outer diameter dimension of the screw probe 23 and the transmission power of the microwave. (transmission efficiency) is in a negative correlation relationship, and the inner diameter dimension of the connection chamber 10 is positively correlated with the transmission power (transmission efficiency) of the microwave, that is, in the case where the screw probe 23 is inserted in the connection chamber 10, the screw The larger the gap between the outer wall of the probe 23 and the inner wall of the connection chamber 10, the higher the transmission power (transmission efficiency) of the microwave.
  • the ratio of the outer diameter of the screw probe 23 to the inner diameter of the connecting chamber 10 determines the maximum transmission power, which can be calculated from the breakdown voltage of the air under the structure according to the transmission characteristics of the coaxial waveguide. Generally, the ratio may range from 1.65 to 3.59, where the two endpoint values correspond to the maximum transmission power and the minimum loss, respectively. It can be seen that by selecting screw probes 23 of different outer diameter sizes and/or selecting connection cavities 10 of different inner diameters, the transmission power of the microwaves can be adjusted to achieve the desired microwave transmission efficiency and desired loss.
  • the length of the screw probe 23 extending into the cavity 22 there is a correlation between the length of the screw probe 23 extending into the cavity 22 and the electric field feeding efficiency.
  • the electric field feeding efficiency can be adjusted. Improve microwave utilization.
  • the relationship between the length of the screw probe 23 extending into the cavity 22 and the electric field feed efficiency is nonlinear and; in addition to the length associated with the insertion of the screw probe 23 into the cavity 22, the electric field
  • the feed efficiency is also related to factors such as the height of the cavity 22, the number and distribution of the dielectric windows in the cavity 22, and therefore the structure of the entire cavity 22 needs to be integrated to achieve optimum microwave utilization efficiency.
  • first probe 23 in this embodiment is a screw probe And fixed in the rectangular waveguide 8 by screwing, but the invention is not limited thereto, but the first probe 23 may also be arranged in the form of a light column, and may be fixed by snapping or pinning. In the rectangular waveguide 8. Further, when the first probe 23 is in the form of a screw probe, in addition to the screw fixing manner, it may be fixed by means of snapping or pinning.
  • the cavity 22 is placed at the top end of the side wall of the vacuum chamber 19, and the vacuum chamber 19 is blocked by the bottom wall of the cavity 22 to form a closed process environment inside the vacuum chamber 19.
  • the bottom wall of the cavity 22 is provided with a plurality of dielectric windows for coupling microwave energy into the vacuum chamber 19 to generate plasma and to form boundary conditions for surface waves. That is, the vacuum chamber 19 is disposed below the resonant cavity 22, and the microwave forms a standing wave in the resonant cavity 22, and the electric field of the standing wave is coupled into the vacuum chamber 19 through the dielectric window, and the plasma is excited in the vacuum chamber 19. And when the density of the plasma is greater than the critical density at which the surface wave plasma is formed, a surface wave is formed on the lower surface of the dielectric window.
  • the electric field feeding efficiency is related to the height of the resonant cavity 22, in order to be able to adjust the height of the resonant cavity 22, it is preferable to set the resonant cavity 22 in such a form that the resonant cavity 22 is formed by stacking a plurality of metal rings, each The structure of one metal ring is similar to a gasket, and a plurality of stacked metal rings form the side walls of the resonant cavity 22, and the hollow portions of the plurality of stacked metal rings define the cavity of the resonant cavity 22.
  • the number of metal rings can be selected as needed to obtain a resonant cavity 22 of a corresponding height.
  • the height of the cavity 22 may be 10 mm to 200 mm, and the height of the cavity 22 is preferably 10 mm to 85 mm in consideration of equipment volume and manufacturing cost.
  • a metal material such as stainless steel can be usually used.
  • the connecting cavity is connected to the resonant cavity and the rectangular waveguide, and the screw probe is inserted into the cavity through the rectangular waveguide and the connecting cavity, thereby feeding the microwave energy into the connecting cavity and the resonant cavity, and setting through the bottom wall of the resonant cavity a plurality of dielectric windows, such that the electric field of the standing wave formed by the microwave in the resonant cavity can be coupled into the vacuum chamber through the respective dielectric windows, and the plasma is excited in the vacuum chamber, so that the plurality of dielectric windows can be equivalent to a plurality of plasmas Body source, relative to existing For a single plasma source, the surface wave plasma device of this structure can obtain a large area of uniform plasma in the vacuum chamber to meet the needs of large-scale wafer processing.
  • FIG. 3 is a top view of the bottom wall of the resonant cavity
  • FIG. 4 is a cross-sectional view of the bottom wall of the resonant cavity taken along A-A' in FIG. 3
  • FIG. 5 is a dielectric member in a separated state. And a cross-sectional view of the hole in the media piece.
  • the dielectric window can be formed in such a manner that a plurality of dielectric member setting holes 26 are formed in the bottom wall of the resonant cavity, and holes are formed in each of the dielectric members.
  • a dielectric member 24 having a shape matching therein is embedded in 26, by means of which a dielectric window can be formed at each of the dielectric member setting holes 26.
  • six dielectric members 24 are disposed on the bottom wall of the resonant cavity 22, which form a circle around the circumferential direction of the vacuum chamber 19, and each of the dielectric members 24 corresponds to a plasma source during the process.
  • the six dielectric members 24 are evenly arranged along the circumferential direction of the vacuum chamber 19, so that a large area of plasma can be obtained by means of six plasma sources arranged in one turn, and since six dielectric members 24 The arrangement is evenly distributed along the circumferential direction of the vacuum chamber 19, so that the distribution of the plasma is relatively uniform. Since the workpiece to be machined is usually disposed concentrically with the vacuum chamber 19 or disposed on the concentric circle of the vacuum chamber 19 in the vacuum chamber 19, it is more preferable to have the six dielectric members 24 along the circumference of the vacuum chamber 19. The uniform arrangement is made on a circle concentric with the vacuum chamber 19, so that the plasma in the vacuum chamber 19 can be more evenly distributed with respect to the workpiece to be processed.
  • the dielectric member 24 may be arranged in a plurality of layers (i.e., a plurality of turns) from the center to the edge of the vacuum chamber 19, so that the edge region of the vacuum chamber 19 is also A plasma of a desired density can be obtained; and for each layer, a plurality of dielectric members 24 can be evenly arranged in a circle concentric with the vacuum chamber 19 in the circumferential direction of the vacuum chamber 19, thus, a plurality of layers The dielectric member 24 forms a plurality of concentric circles.
  • an orthographic projection of the plurality of dielectric members 24 in the plane of the bottom surface of the vacuum chamber 19 may fall on the inner wall of the vacuum chamber 19 at the plane.
  • the inner wall of the vacuum chamber 19 is outside the orthographic projection of the plane, if The dielectric member 24 is disposed too close to the inner wall of the cavity 22 such that its orthographic projection in the plane of the bottom surface of the vacuum chamber 19 fails to fall within the inner wall of the vacuum chamber 19 within the range defined by the orthographic projection of the plane This will result in less excitation and utilization of the dielectric member 24 within the vacuum chamber 19.
  • the dielectric member 24 can be mounted to the bottom wall of the cavity 22 in such a manner that, for example, the dielectric member is not provided in the bottom wall of the cavity 22, but the dielectric member 24 is directly placed on the bottom wall of the cavity 22. Extending from the bottom wall of the resonant cavity 22; or a plurality of dielectric member-providing holes 26 of the same number as the dielectric members 24 are provided on the bottom wall of the resonant cavity 22, the plurality of dielectric members providing the shape of the holes 26. One-to-one correspondence with the shapes of the plurality of dielectric members 24, and each of the dielectric member-providing holes 26 is embedded with a dielectric member 24 having a shape matched thereto.
  • the shape of the dielectric member 24 in this embodiment is similar to the combination of two cylinders (the first cylinder 241 and the second cylinder 242), the first cylinder 241 and the second.
  • the cylinders 242 are coaxially disposed and stacked one on another, with the first cylinder 241 located above and having a diameter greater than the diameter of the second cylinder 242 to form an inverted "convex" shape.
  • the dielectric member setting hole 26 is disposed in an inverted "convex" shape matching the dielectric member 24.
  • the counterbore 261 of the dielectric member setting hole 26 is a cylindrical counterbore
  • the via 262 is a light hole. .
  • the first cylinder 241 is placed in the counterbore 261, and the second cylinder 242 is placed in the via 262.
  • the height of the second pillar 242 should be greater than or equal to the depth of the via 262, that is, the lower surface of the second pillar 241 is flush with the lower surface of the bottom wall of the resonant cavity 22 or protrudes downward from the cavity 22
  • the lower surface of the bottom wall couples the electric field of the standing wave formed by the microwaves within the cavity into the vacuum chamber 19.
  • the dielectric member 24 in this embodiment is a combination of two cylinders having a minimum diameter that is the diameter of the second cylinder 242. Since the area of the dielectric member 24 is sufficient for the overall setting of the dielectric member 24 For example, for a dielectric member 24 disposed on the same concentric circle, the larger the area of the single dielectric member 24, the smaller the number that can be set, so that a comprehensive consideration is needed in determining the minimum diameter of the dielectric member 24.
  • the area of the single dielectric member 24 and the overall number of the dielectric members 24, in practical applications, the minimum diameter of the dielectric member 24 is preferably set to 40 mm - 120 mm.
  • the diameter of the second cylinder 242 can be set to 60 mm
  • the diameter of the first cylinder 241 can be set to 90 mm.
  • the shape and assembly manner of the dielectric member and the dielectric member providing hole are a preferred embodiment for facilitating processing, mounting and fixing.
  • the dielectric member and the dielectric member are disposed.
  • the shape of the hole may not be limited thereto, for example, the dielectric member may be provided as a single cylinder or a single frustum or a combination of a cylinder and a frustum or a combination of a plurality of frustums, and accordingly, the dielectric member setting hole may be set to a hole of a single cylinder shape or a hole of a single frustum shape or a combination of a shape of a cylinder and a frustum or a combination of a plurality of frustums, wherein the cylinder comprises a cylinder and a prism, a so-called frustum Including a truncated cone and a frustum, the so-called multiple fingers are more than two
  • the shapes of the plurality of dielectric members on the bottom wall of the resonant cavity 22 need not be identical to each other.
  • the dielectric member in the embodiment of the present invention may be made of quartz, ceramic, quartz coated with antimony trioxide or ceramic coated with antimony trioxide.
  • the diameter of the top surface of the frustum is set to be larger than the diameter of the bottom surface, so that the weight of the dielectric member can be utilized. It is more securely mounted in the media member setting hole.
  • the dielectric member is provided in a combination of a plurality of cylinders (for example, the two cylinder assembly structures shown in FIG. 6A), the plurality of cylinders are coaxially and stacked one on another, and the dielectric member is assembled and detached for convenience.
  • the diameter of the lower stage cylinder is not larger than the diameter of the upper stage cylinder.
  • the dielectric member When the dielectric member is provided in a combination of a plurality of frustums (for example, the two-stage frustum structure shown in FIGS. 6B and 6C), the plurality of frustums are coaxially arranged one upon another and stacked step by step, and for ease of installation and disassembly
  • the dielectric member the diameter of the top surface of the lower stage frustum is not larger than the diameter of the bottom surface of the upper stage frustum.
  • the dielectric piece When the dielectric piece is set to a cylinder and cone
  • the combination of the stages for example, the column and frustum combination structure shown in FIGS.
  • the column and the frustum are coaxially and stacked one on another, and the lower stage is installed for the purpose of facilitating installation and disassembly of the medium member.
  • the diameter of the top surface of the cylinder/frustum is not greater than the diameter of the bottom surface of the upper cylinder/frustum.
  • the "upper” and “lower” in the “upper level” and “lower level” are not based on the “upper” and “lower” in the positional relationship, but are arranged according to the insertion of the dielectric member in the assembly.
  • the level that first extends into the hole in the dielectric member is called the "lower level”
  • the level that extends into the hole of the dielectric member immediately following the “lower level” is called
  • the first stage first protrudes into the dielectric member setting hole, so it is called the next stage, and the level at the upper position in the positional relationship is called the upper level; otherwise, when the dielectric member is from the lower side of the bottom wall of the resonant cavity
  • the one level at the upper position in the positional relationship first protrudes into the dielectric member setting hole and is referred to as the next level
  • the lower level in the positional relationship is referred to as the upper level.
  • the dielectric member 24 is preferably mounted from above the bottom wall of the resonant cavity 22 to secure the dielectric member 24 to the resonant cavity 22 by the weight of the dielectric member 24 itself. On the bottom wall.
  • a seal such as a sealing ring is provided therebetween.
  • the seal between the dielectric member 24 and the bottom wall of the resonant cavity 22 will be described in detail below with reference to FIGS. 2 and 5.
  • annular groove is formed in the circumferential direction of the lower surface of the counterbore 261 of the dielectric member providing hole 26, and an annular seal ring 17 is provided therein, and the annular groove and the annular seal ring 17 are provided.
  • Extending along the circumference of the media member 24 forms a closed annular structure around the axis of the media member 24.
  • a sealing member is disposed between the dielectric member and the bottom wall of the resonant cavity corresponding to each of the dielectric members, and the sealing member extends along the circumferential direction of the dielectric member to form an axis surrounding the dielectric member.
  • the closed annular structure, and along the circumferential direction of the seal, the dielectric member and the resonant cavity are always in contact with the seal to achieve a seal between the dielectric member and the bottom wall of the cavity.
  • a sealing ring seating groove may be formed on the bottom wall of the resonant cavity along the circumferential direction of the dielectric member, and the annular sealing ring is disposed therein to thereby form the medium along the circumferential direction of the dielectric member
  • the sleeve is sleeved therein to block the gap between the dielectric member and the bottom wall of the cavity; or, a sealing ring can be formed on the dielectric member along the circumferential direction thereof, and the annular sealing ring is placed therein to be along the medium
  • the circumferential direction of the piece is sleeved therein to block the gap between the dielectric member and the bottom wall of the cavity; or, the bottom wall of the cavity may be simultaneously sealed along the circumferential direction of the dielectric member.
  • a ring is disposed, and a sealing ring is disposed along the circumferential direction of the dielectric member, and a sealing ring is disposed in each sealing ring seating groove, so that the dielectric member is sleeved in the circumferential direction of the dielectric member, This seals the gap between the dielectric member and the bottom wall of the cavity.
  • the sealing ring can be directly placed on the contact surface between the dielectric member and the bottom wall of the resonant cavity, by the contact and pressing between the dielectric member and the bottom wall of the resonant cavity.
  • the annular sealing ring is sleeved on the dielectric member, and the dielectric member is placed in the dielectric member setting hole of the bottom wall of the resonant cavity, so that the sealing ring can be positioned and sealed as well; , the annular sealing ring is placed on the upper surface of the counterbore 261 shown in FIG. 5, and the upper surface of the dielectric member and the counterbore 261 and the annular sealing ring are disposed in the case where the dielectric member is disposed in the dielectric member providing hole. Contact and extrusion to achieve the positioning and sealing of the seal.
  • a second probe can be placed within the resonant cavity 22.
  • the second probe 27 in the resonant cavity 22 will be described in detail below with reference to FIGS. 2 and 3.
  • a second probe 27 is also included inside the resonant cavity 22, which is made of a metal material, and the number and position correspond to the number and position of the dielectric member 24, specifically, the second probe. 27 and the number of the dielectric members 24 are six, and each of the second probes 27 corresponds to one.
  • the media members 24, and the orthographic projection of each of the second probes 27 on the plane of the corresponding media member 24 is coaxial with the orthographic projection of the media member 24 on the plane.
  • the second probe 27 is disposed on the top wall of the resonant cavity 22 and extends downward in the axial direction of the resonant cavity 22, that is, the second probe 27 is disposed in the resonant cavity 22 along the axial direction of the resonant cavity 22. Between the top wall and the dielectric member 24, and one end of the second probe 27 is connected to the top wall of the resonant cavity 22, and the other end (lower end) extends downward along the axial direction of the resonant cavity 22, and the degree of extension thereof can be up to The upper surface of the dielectric member 24 is in contact (but not the dielectric member 24).
  • the reason why the second probe 27 cannot press the dielectric member 24 is that during the process of exciting the plasma, the temperature of the dielectric member 24 rises, causing its volume to expand, if the second probe 27 originally squeezes the dielectric member 24 The pressure between the volume-expanded dielectric member 24 and the second probe 27 is excessively increased to cause the dielectric member 24 to be broken.
  • the surface wave plasma device is capable of working well at low discharge pressures.
  • the edge of the orthographic projection of the second probe 27 on the plane of its corresponding media member 24 and the edge of the medial projection of the media member 24 on the plane The distance W cannot be too small, preferably, W is greater than or equal to 2 cm.
  • the second probes 27 in the embodiment of the present invention correspond to the number and position of the dielectric members 24, the present invention is not limited thereto, and in practical applications, the second probes 27
  • the number of the second probes 27 may also be offset from the position of the dielectric member 24.
  • the second probe 27 may be disposed on the top wall of the resonant cavity 22.
  • the gap between the dielectric members 24 is directly opposite the position, and/or may also be provided at the gap between the dielectric members 24 on the bottom wall of the resonant cavity 22.
  • the specific number and position thereof can also be determined in consideration of the size, height and shape of the cavity 22.
  • the surface wave plasma device provided by the embodiment of the present invention can generate a large area of plasma, and thus can reach an industrial application level; and, in the case where the second probe 27 is appropriately disposed in the resonant cavity, the pole can be Initial ionization is achieved with lower power at low air pressure, thereby expanding the process interval of the surface wave plasma device.
  • the extension length of the second probe 27 within the resonant cavity 22 is adjustable.
  • the extension length refers to the distance between the lower end of the second probe 27 and the top wall of the resonant cavity 22.
  • the surface wave plasma device in the second embodiment of the present invention differs from the surface wave plasma device provided in the foregoing first embodiment in the structure of the resonant cavity, as for the microwave generating device, the microwave transmission matching structure, the connecting cavity 10, and the vacuum chamber.
  • the structure of the chamber 19 and its functions are the same as those of the respective structures described above in connection with the first embodiment, and will not be described herein.
  • the resonant cavity in this embodiment will be described in detail below.
  • a plurality of dielectric windows may be disposed in such a manner that a plurality of dielectric member-providing holes 441 are formed in the bottom wall 44 of the resonant cavity 22, and the bottom wall 44 of the resonant cavity 22 is A dielectric member (hereinafter simply referred to as a dielectric plate) 45 having a plate-like structure is disposed between the vacuum chambers 19, and the dielectric plate 45 can cover all of the dielectric member-providing holes 441, that is, by means of the dielectric plate 45, each can be A dielectric window is formed at the dielectric member setting hole 441.
  • a dielectric plate 45 having a plate-like structure
  • the resonant cavity 22 in this embodiment is disposed on the top of the vacuum chamber 19, which is a cavity structure made of metal such as copper, aluminum, stainless steel or aluminum alloy.
  • the top wall of the resonant cavity 22 is provided with a plurality of second probes 27 extending in the axial direction of the resonant cavity 22, the upper end of which extends above the top wall of the resonant cavity 22, and the lower end of which extends through the resonance
  • the top wall of the cavity 22 extends to the inside of the cavity 22, and the second probe 27 is disposed to be movable up and down along the axial direction of the cavity 22 with respect to the bottom wall of the cavity 22, that is, the second probe 27
  • the spacing between the lower end and the bottom wall of the resonant cavity 22 can be adjusted and varied.
  • the bottom wall 44 is provided with a plurality of dielectric member-providing holes 441 penetrating the bottom wall 44 in the thickness direction thereof, and the number and positions of the plurality of dielectric member-providing holes 441 and the number and positions of the plurality of second probes 27 are one by one. correspond.
  • This bottom wall 44 serves as an antenna board, hereinafter referred to as an antenna board 44.
  • a dielectric member (hereinafter simply referred to as a dielectric plate) 45 having a plate-like structure for coupling microwave energy into the vacuum chamber 19 to excite plasma in the vacuum chamber 19 is disposed under the antenna plate 44.
  • the dielectric plate 45 is disposed between the antenna plate 44 and the vacuum chamber 19, and is sealingly connected to the vacuum chamber 19, that is, the dielectric member 45 adopts a monolithic structure to isolate the antenna plate 44 from the vacuum chamber 19. This not only allows the microwave energy to be coupled into the vacuum chamber 19, but also allows the interface between the cavity 22 and the vacuum chamber 19 to be a dielectric material, thereby avoiding metal contamination.
  • the material used for the dielectric member 45 includes quartz, ceramic, quartz coated with antimony trioxide or ceramic coated with antimony trioxide.
  • the thickness of the dielectric member 45 ranges from 5 to 80 mm.
  • a high frequency electromagnetic field is formed in the cavity 22 near the second probe 27, and the distribution of the high frequency electromagnetic field affects the density distribution of the plasma formed in the vacuum chamber 19.
  • the distribution of the high frequency electromagnetic field can be adjusted, so that the density distribution of the plasma formed in the vacuum chamber 19 can be adjusted in real time, and Different requirements for plasma distribution under different process conditions can be met.
  • the initial ionization of the reaction gas can be formed using a lower power under extremely low gas pressure conditions, thereby expanding the process interval.
  • the projections of the plurality of second probes 27 are distributed at the center of the plane of the antenna board 44, and the radius is Different two concentric circles (inner ring circumference and outer ring circumference).
  • the radius is Different two concentric circles (inner ring circumference and outer ring circumference).
  • the vertical spacing H1 between the lower ends of the six second probes 27N distributed on the circumference of the inner ring and the antenna plate 44 is the same, and 12 second probes distributed on the circumference of the outer ring.
  • H1 10 mm
  • H2 40 mm.
  • H1 10 mm
  • H2 40 mm
  • the plasma distributed over the support table 21 is distributed more densely in the region corresponding to the six second probes 27N distributed on the circumference of the inner ring than in the outer ring.
  • the density of the distribution of the regions corresponding to the twelve second probes 27W on the circumference is as shown in Fig. 8D, thereby realizing the adjustment of the density distribution of the plasma.
  • the vertical pitch H4 between the lower ends of the six second probes 27N distributed on the circumference of the inner ring and the antenna plate 44 is the same, and the lower ends of the twelve second probes 27W distributed on the circumference of the outer ring.
  • H3 10 mm
  • H4 30 mm.
  • the plasma distributed over the support table 21 is distributed more densely in the region corresponding to the 12 second probes 27W distributed on the circumference of the outer ring than in the inner ring.
  • the density of the distribution of the regions corresponding to the six second probes 27N on the circumference is as shown in Fig. 8E, thereby realizing the adjustment of the density distribution of the plasma.
  • the vertical spacing between the lower end of the second probe on the same circumference and the antenna plate may be set to be different according to specific conditions to meet the plasma distribution under different process conditions. Different requirements.
  • the projections of the plurality of second probes 27 are distributed in two concentric circles having a center of a center of the plane of the antenna board 44 and having different radii ( The inner ring circumference and the outer ring circumference); however, the invention is not limited Therefore, in practical applications, the number of concentric circles can also be three or more.
  • the lifting movement of the second probe 27 may be automatically adjusted remotely by using a lifting mechanism, or the lifting movement of the second probe 27 may be manually adjusted.
  • the resonant cavity 22 further includes a plurality of lifting mechanisms (not shown), the number of the lifting mechanisms corresponding to the number of circumferences, and the respective lifting mechanisms are used for driving in one-to-one correspondence All of the second probes on each circumference rise synchronously or synchronously, that is, corresponding to the two concentric circles of the embodiment, the lifting mechanism is two, one of which is used to synchronously drive all the second on the circumference of the inner ring The probe 27N; the other of which is used to synchronously drive all of the second probes 27W on the circumference of the outer ring.
  • the number of lifting mechanisms may correspond to the number of second probes, each lifting mechanism for driving one of the second probes to rise or fall in a one-to-one correspondence. That is to say, the number of lifting mechanisms is 18, and each lifting mechanism is used to individually drive a corresponding one of the second probes to rise or fall.
  • the lifting mechanism may be a lifting and lowering motor, a lifting cylinder or a lifting hydraulic cylinder or the like having a lifting and lowering driving function.
  • each of the second probes has an external thread, and a threaded hole penetrating the thickness thereof is disposed on the top wall wall 421 of the cavity 22, and each of the second probes 27 has a one-to-one correspondence through the external threads thereof. Grounded in each threaded hole.
  • the vertical spacing between the lower end of the second probe and the antenna plate 44 is adjusted by manually rotating any one of the second probes 27 clockwise or counterclockwise.
  • the automatic adjustment mode can also be adopted instead of the manual adjustment mode, that is, the driving mechanism such as a rotating electric machine is used to automatically drive any one of the second probes 27 to rotate clockwise or counterclockwise, thereby realizing Adjustment of the vertical spacing between the lower end of the second probe 27 and the antenna plate 44.
  • the driving mechanism such as a rotating electric machine is used to automatically drive any one of the second probes 27 to rotate clockwise or counterclockwise, thereby realizing Adjustment of the vertical spacing between the lower end of the second probe 27 and the antenna plate 44.
  • the projections of the plurality of second probes 27 are distributed on a circumference centered on the center of the plane of the antenna board 44. . As shown in Fig. 9A, there are five second probes 27D distributed on the circumference, respectively 43D1 to 43D5.
  • the vertical spacing H5 between the lower ends of the five second probes 27D distributed on the circumference and the antenna board 44 is different, and the lower end of one of the second probes 27D is interposed between the antenna board 44 and the antenna board 44.
  • the plasma distributed above the support table 21 is distributed in a region corresponding to one of the second probes 27D having a vertical pitch of H7, and the density is less than the distribution distributed at a vertical interval of H6. The density of the distribution of the regions corresponding to the second probes 27D, thereby achieving adjustment of the density distribution of the plasma.
  • the lifting movement of the second probe 27 may be automatically adjusted remotely by using a lifting mechanism, or the lifting movement of the second probe 27 may be manually adjusted.
  • the lifting mechanism is similar to the lifting mechanism in the first arrangement described above, except that the lifting mechanism can also be one for driving all the second probes to rise or fall synchronously.
  • the manual adjustment mode is the same as the manual adjustment mode in the above-mentioned first arrangement mode, and details are not described herein again.
  • the vertical spacing between the lower end of the second probe 27 and the antenna plate 44 is not less than 10 mm to avoid atmospheric breakdown under high power conditions.
  • the length of the resonant cavity 22 in the vertical direction ranges from 10 to 200 mm to reserve sufficient space for the lifting movement of the second probe 27.
  • the dielectric member setting hole 441 on the antenna board 44 may be a circular hole, and the diameter of the circular hole may range from 20 to 120 mm, preferably 40 to 120 mm; or the dielectric member on the antenna board 44 is disposed.
  • the hole 441 may also be a square hole having a side length ranging from 20 to 120 mm, preferably from 40 to 120 mm.
  • the dielectric member setting holes on the antenna board 44 may be other through holes of any shape.
  • a plurality of dielectric member setting holes are formed in the bottom wall of the resonant cavity, and a dielectric member is disposed between the bottom wall of the resonant cavity and the vacuum chamber, the dielectric member includes a mounting plate and is embedded in the mounting plate a plurality of dielectric blocks each penetrating the mounting plate along a thickness direction of the mounting plate, and the number and arrangement positions of the plurality of dielectric blocks are in one-to-one correspondence with the number and positions of the plurality of dielectric member setting holes, by means of each
  • the dielectric member may form a dielectric window at its corresponding dielectric member setting hole.
  • the dielectric block comprises a separate structural member that is processed into a fixed shape and can be embedded in the dielectric member providing hole, and also includes particles, powder or sheet made of the aforementioned dielectric material that can be filled in the dielectric member setting hole.
  • a surface wave plasma apparatus according to a third embodiment of the present invention will be described in detail below with reference to FIG.
  • the difference between the surface wave plasma device in the third embodiment of the present invention and the surface wave plasma device provided in the foregoing first embodiment is that the present embodiment eliminates the connection cavity connected between the rectangular waveguide 8 and the resonant cavity 22, Rather, the upper surface of the resonant cavity 22 is directly stacked on the lower surface of the rectangular waveguide 8, and the microwave outlet opened by the bottom wall of the rectangular waveguide 8 is aligned with the microwave inlet opened by the top wall of the resonant cavity 22 and The joint is sealed, and the rectangular waveguide 8 and the resonant cavity 22 are hermetically connected.
  • the screw probe 23 extends directly from the rectangular waveguide 8 into the cavity 22.
  • the respective structures described above in connection with the first embodiment have the same functions and will not be described again.
  • a surface wave plasma apparatus according to a fourth embodiment of the present invention will be described in detail below with reference to FIG.
  • the surface wave plasma apparatus in the fourth embodiment of the present invention is similar to the surface wave plasma apparatus in the foregoing first embodiment, and the difference is that in the present embodiment, the screw probe 23 is omitted and connected to the rectangular waveguide 8. And a connection cavity between the cavity 22, and the microwave outlet of the rectangular waveguide 8 is not disposed in the middle portion thereof but at the end thereof, that is, the terminal of the rectangular waveguide 8 has a microwave outlet, and the microwave inlet of the microwave outlet and the resonant cavity The sealing is performed at the junction of the two, and the rectangular waveguide 8 and the resonant cavity 22 are hermetically connected.

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PCT/CN2016/112597 2016-03-03 2016-12-28 表面波等离子体设备 WO2017148208A1 (zh)

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CN118508207A (zh) * 2024-07-09 2024-08-16 中国科学技术大学 太赫兹波段的表面等离子体激元发生器

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JP7184254B2 (ja) * 2018-12-06 2022-12-06 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
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CN110234195A (zh) * 2019-07-18 2019-09-13 中国科学技术大学 谐振腔式ecr等离子体源装置以及方法
JP7360934B2 (ja) * 2019-12-25 2023-10-13 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
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