KR102097436B1 - 표면파 플라즈마 장치 - Google Patents
표면파 플라즈마 장치 Download PDFInfo
- Publication number
- KR102097436B1 KR102097436B1 KR1020187028111A KR20187028111A KR102097436B1 KR 102097436 B1 KR102097436 B1 KR 102097436B1 KR 1020187028111 A KR1020187028111 A KR 1020187028111A KR 20187028111 A KR20187028111 A KR 20187028111A KR 102097436 B1 KR102097436 B1 KR 102097436B1
- Authority
- KR
- South Korea
- Prior art keywords
- probe
- dielectric member
- resonant cavity
- dielectric
- vacuum chamber
- Prior art date
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32238—Windows
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/461—Microwave discharges
- H05H1/4615—Microwave discharges using surface waves
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610121051.9 | 2016-03-03 | ||
CN201610121051.9A CN107155256A (zh) | 2016-03-03 | 2016-03-03 | 一种表面波等离子体装置 |
PCT/CN2016/112597 WO2017148208A1 (zh) | 2016-03-03 | 2016-12-28 | 表面波等离子体设备 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20180117680A KR20180117680A (ko) | 2018-10-29 |
KR102097436B1 true KR102097436B1 (ko) | 2020-05-26 |
Family
ID=59743450
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020187028111A KR102097436B1 (ko) | 2016-03-03 | 2016-12-28 | 표면파 플라즈마 장치 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6718972B2 (ja) |
KR (1) | KR102097436B1 (ja) |
CN (2) | CN117794040A (ja) |
SG (1) | SG11201807555UA (ja) |
WO (1) | WO2017148208A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109698107B (zh) * | 2017-10-24 | 2021-04-09 | 北京北方华创微电子装备有限公司 | 表面波等离子体设备 |
CN109755088B (zh) * | 2017-11-06 | 2021-04-09 | 北京北方华创微电子装备有限公司 | 表面波等离子体设备 |
CN110769585B (zh) * | 2018-07-27 | 2023-08-18 | 北京北方华创微电子装备有限公司 | 表面波等离子体装置 |
CN110797250B (zh) * | 2018-08-03 | 2022-12-09 | 北京北方华创微电子装备有限公司 | 表面波等离子体加工设备 |
CN110911260B (zh) * | 2018-09-14 | 2023-04-14 | 北京北方华创微电子装备有限公司 | 表面波等离子体加工设备 |
CN109195299B (zh) * | 2018-10-31 | 2020-09-11 | 上海工程技术大学 | 一种圆柱表面波等离子体产生装置 |
CN111128664B (zh) * | 2018-11-01 | 2022-05-27 | 北京北方华创微电子装备有限公司 | 谐振腔结构和半导体处理设备 |
JP7184254B2 (ja) * | 2018-12-06 | 2022-12-06 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
CN111755308B (zh) * | 2019-03-27 | 2022-07-22 | 北京北方华创微电子装备有限公司 | 工艺腔室和半导体处理设备 |
CN110234195A (zh) * | 2019-07-18 | 2019-09-13 | 中国科学技术大学 | 谐振腔式ecr等离子体源装置以及方法 |
CN110993479B (zh) * | 2019-12-04 | 2022-07-19 | 北京北方华创微电子装备有限公司 | 远程等离子体源产生装置及半导体加工设备 |
JP7360934B2 (ja) * | 2019-12-25 | 2023-10-13 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
CN114871574B (zh) * | 2022-05-27 | 2023-07-04 | 华中科技大学 | 一种微波辅助去除激光切割件表面毛刺的装置 |
CN115354311A (zh) * | 2022-07-15 | 2022-11-18 | 杭州电子科技大学 | 复合左右手波导的缝隙阵列天线表面波等离子沉积装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104726850A (zh) * | 2013-12-23 | 2015-06-24 | 朱雨 | 一种微波等离子体化学气相沉积设备 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0878190A (ja) * | 1994-09-01 | 1996-03-22 | Kokusai Electric Co Ltd | マイクロ波放電装置及び放電方法 |
JP4678905B2 (ja) * | 1999-12-20 | 2011-04-27 | 徳芳 佐藤 | プラズマ処理装置 |
JP4008728B2 (ja) * | 2002-03-20 | 2007-11-14 | 株式会社 液晶先端技術開発センター | プラズマ処理装置 |
JP4163432B2 (ja) * | 2002-03-26 | 2008-10-08 | 矢崎総業株式会社 | プラズマ処理装置 |
CN1272621C (zh) * | 2002-10-30 | 2006-08-30 | 江苏大学 | 界面结合强度的远紫外激光划痕测量方法及装置 |
CN1173607C (zh) * | 2002-12-13 | 2004-10-27 | 北京工业大学 | 微波电子回旋共振等离子体均匀化方法及装置 |
JP2004200113A (ja) * | 2002-12-20 | 2004-07-15 | Hamamatsu Kagaku Gijutsu Kenkyu Shinkokai | マイクロ波プラズマ発生装置 |
JP2006040609A (ja) * | 2004-07-23 | 2006-02-09 | Naohisa Goto | プラズマ処理装置および方法、並びにフラットパネルディスプレイ装置の製造方法 |
JP2006324551A (ja) * | 2005-05-20 | 2006-11-30 | Shibaura Mechatronics Corp | プラズマ発生装置及びプラズマ処理装置 |
JP2007258093A (ja) * | 2006-03-24 | 2007-10-04 | National Univ Corp Shizuoka Univ | マイクロ波プラズマ発生装置 |
JP4978985B2 (ja) * | 2006-03-30 | 2012-07-18 | 東京エレクトロン株式会社 | プラズマ処理方法 |
JP2008027816A (ja) * | 2006-07-24 | 2008-02-07 | Canon Inc | プラズマ処理装置及びプラズマ処理方法 |
JP2008181710A (ja) * | 2007-01-23 | 2008-08-07 | Canon Inc | プラズマ処理装置及び方法 |
JP4927160B2 (ja) * | 2007-03-08 | 2012-05-09 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ処理方法、および記憶媒体 |
CN100593585C (zh) * | 2007-08-21 | 2010-03-10 | 西安电子科技大学 | 微波电子回旋共振等离子体化学气相淀积设备 |
JP2009301783A (ja) * | 2008-06-11 | 2009-12-24 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
JP2011103274A (ja) * | 2009-11-12 | 2011-05-26 | Tokyo Electron Ltd | プラズマ処理装置およびマイクロ波伝播体 |
JP5893865B2 (ja) * | 2011-03-31 | 2016-03-23 | 東京エレクトロン株式会社 | プラズマ処理装置およびマイクロ波導入装置 |
JP5836144B2 (ja) * | 2012-01-31 | 2015-12-24 | 東京エレクトロン株式会社 | マイクロ波放射機構および表面波プラズマ処理装置 |
CN103668127B (zh) * | 2013-12-10 | 2015-12-30 | 河北普莱斯曼金刚石科技有限公司 | 一种圆顶式微波等离子体化学气相沉积金刚石膜装置 |
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2016
- 2016-03-03 CN CN202410115468.9A patent/CN117794040A/zh active Pending
- 2016-03-03 CN CN201610121051.9A patent/CN107155256A/zh active Pending
- 2016-12-28 KR KR1020187028111A patent/KR102097436B1/ko active IP Right Grant
- 2016-12-28 SG SG11201807555UA patent/SG11201807555UA/en unknown
- 2016-12-28 JP JP2018546492A patent/JP6718972B2/ja active Active
- 2016-12-28 WO PCT/CN2016/112597 patent/WO2017148208A1/zh active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104726850A (zh) * | 2013-12-23 | 2015-06-24 | 朱雨 | 一种微波等离子体化学气相沉积设备 |
Also Published As
Publication number | Publication date |
---|---|
KR20180117680A (ko) | 2018-10-29 |
JP2019508855A (ja) | 2019-03-28 |
JP6718972B2 (ja) | 2020-07-08 |
CN107155256A (zh) | 2017-09-12 |
SG11201807555UA (en) | 2018-10-30 |
CN117794040A (zh) | 2024-03-29 |
WO2017148208A1 (zh) | 2017-09-08 |
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