SG11201807555UA - Surface wave plasma apparatus - Google Patents

Surface wave plasma apparatus

Info

Publication number
SG11201807555UA
SG11201807555UA SG11201807555UA SG11201807555UA SG11201807555UA SG 11201807555U A SG11201807555U A SG 11201807555UA SG 11201807555U A SG11201807555U A SG 11201807555UA SG 11201807555U A SG11201807555U A SG 11201807555UA SG 11201807555U A SG11201807555U A SG 11201807555UA
Authority
SG
Singapore
Prior art keywords
surface wave
plasma apparatus
wave plasma
wave
plasma
Prior art date
Application number
SG11201807555UA
Other languages
English (en)
Inventor
Xijiang Chang
Qiongrong Qu
Gang Wei
Yahui Huang
Jinzhi Bai
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Publication of SG11201807555UA publication Critical patent/SG11201807555UA/en

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H05H1/4615—Microwave discharges using surface waves

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
SG11201807555UA 2016-03-03 2016-12-28 Surface wave plasma apparatus SG11201807555UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610121051.9A CN107155256A (zh) 2016-03-03 2016-03-03 一种表面波等离子体装置
PCT/CN2016/112597 WO2017148208A1 (zh) 2016-03-03 2016-12-28 表面波等离子体设备

Publications (1)

Publication Number Publication Date
SG11201807555UA true SG11201807555UA (en) 2018-10-30

Family

ID=59743450

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201807555UA SG11201807555UA (en) 2016-03-03 2016-12-28 Surface wave plasma apparatus

Country Status (5)

Country Link
JP (1) JP6718972B2 (ja)
KR (1) KR102097436B1 (ja)
CN (2) CN107155256A (ja)
SG (1) SG11201807555UA (ja)
WO (1) WO2017148208A1 (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109698107B (zh) * 2017-10-24 2021-04-09 北京北方华创微电子装备有限公司 表面波等离子体设备
CN109755088B (zh) * 2017-11-06 2021-04-09 北京北方华创微电子装备有限公司 表面波等离子体设备
CN110769585B (zh) * 2018-07-27 2023-08-18 北京北方华创微电子装备有限公司 表面波等离子体装置
CN110797250B (zh) * 2018-08-03 2022-12-09 北京北方华创微电子装备有限公司 表面波等离子体加工设备
CN110911260B (zh) * 2018-09-14 2023-04-14 北京北方华创微电子装备有限公司 表面波等离子体加工设备
CN109195299B (zh) * 2018-10-31 2020-09-11 上海工程技术大学 一种圆柱表面波等离子体产生装置
CN111128664B (zh) * 2018-11-01 2022-05-27 北京北方华创微电子装备有限公司 谐振腔结构和半导体处理设备
JP7184254B2 (ja) * 2018-12-06 2022-12-06 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN111755308B (zh) * 2019-03-27 2022-07-22 北京北方华创微电子装备有限公司 工艺腔室和半导体处理设备
CN110234195A (zh) * 2019-07-18 2019-09-13 中国科学技术大学 谐振腔式ecr等离子体源装置以及方法
CN110993479B (zh) * 2019-12-04 2022-07-19 北京北方华创微电子装备有限公司 远程等离子体源产生装置及半导体加工设备
JP7360934B2 (ja) * 2019-12-25 2023-10-13 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN113793792B (zh) * 2021-09-10 2024-07-23 成都市吉亨特科技有限公司 一种自动激励微波气体放电设备
CN114871574B (zh) * 2022-05-27 2023-07-04 华中科技大学 一种微波辅助去除激光切割件表面毛刺的装置
CN115354311A (zh) * 2022-07-15 2022-11-18 杭州电子科技大学 复合左右手波导的缝隙阵列天线表面波等离子沉积装置

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JPH0878190A (ja) * 1994-09-01 1996-03-22 Kokusai Electric Co Ltd マイクロ波放電装置及び放電方法
JP4678905B2 (ja) * 1999-12-20 2011-04-27 徳芳 佐藤 プラズマ処理装置
JP4008728B2 (ja) * 2002-03-20 2007-11-14 株式会社 液晶先端技術開発センター プラズマ処理装置
JP4163432B2 (ja) * 2002-03-26 2008-10-08 矢崎総業株式会社 プラズマ処理装置
CN1272621C (zh) * 2002-10-30 2006-08-30 江苏大学 界面结合强度的远紫外激光划痕测量方法及装置
CN1173607C (zh) * 2002-12-13 2004-10-27 北京工业大学 微波电子回旋共振等离子体均匀化方法及装置
JP2004200113A (ja) * 2002-12-20 2004-07-15 Hamamatsu Kagaku Gijutsu Kenkyu Shinkokai マイクロ波プラズマ発生装置
JP2006040609A (ja) * 2004-07-23 2006-02-09 Naohisa Goto プラズマ処理装置および方法、並びにフラットパネルディスプレイ装置の製造方法
JP2006324551A (ja) * 2005-05-20 2006-11-30 Shibaura Mechatronics Corp プラズマ発生装置及びプラズマ処理装置
JP2007258093A (ja) * 2006-03-24 2007-10-04 National Univ Corp Shizuoka Univ マイクロ波プラズマ発生装置
JP4978985B2 (ja) * 2006-03-30 2012-07-18 東京エレクトロン株式会社 プラズマ処理方法
JP2008027816A (ja) * 2006-07-24 2008-02-07 Canon Inc プラズマ処理装置及びプラズマ処理方法
JP2008181710A (ja) * 2007-01-23 2008-08-07 Canon Inc プラズマ処理装置及び方法
JP4927160B2 (ja) * 2007-03-08 2012-05-09 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法、および記憶媒体
CN100593585C (zh) * 2007-08-21 2010-03-10 西安电子科技大学 微波电子回旋共振等离子体化学气相淀积设备
JP2009301783A (ja) * 2008-06-11 2009-12-24 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP2011103274A (ja) * 2009-11-12 2011-05-26 Tokyo Electron Ltd プラズマ処理装置およびマイクロ波伝播体
JP5893865B2 (ja) * 2011-03-31 2016-03-23 東京エレクトロン株式会社 プラズマ処理装置およびマイクロ波導入装置
JP5836144B2 (ja) * 2012-01-31 2015-12-24 東京エレクトロン株式会社 マイクロ波放射機構および表面波プラズマ処理装置
CN103668127B (zh) * 2013-12-10 2015-12-30 河北普莱斯曼金刚石科技有限公司 一种圆顶式微波等离子体化学气相沉积金刚石膜装置
CN104726850B (zh) * 2013-12-23 2017-08-25 朱雨 一种微波等离子体化学气相沉积设备

Also Published As

Publication number Publication date
CN117794040A (zh) 2024-03-29
WO2017148208A1 (zh) 2017-09-08
CN107155256A (zh) 2017-09-12
KR20180117680A (ko) 2018-10-29
JP2019508855A (ja) 2019-03-28
KR102097436B1 (ko) 2020-05-26
JP6718972B2 (ja) 2020-07-08

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