WO2017140265A1 - 曝光系统、曝光装置及曝光方法 - Google Patents

曝光系统、曝光装置及曝光方法 Download PDF

Info

Publication number
WO2017140265A1
WO2017140265A1 PCT/CN2017/073957 CN2017073957W WO2017140265A1 WO 2017140265 A1 WO2017140265 A1 WO 2017140265A1 CN 2017073957 W CN2017073957 W CN 2017073957W WO 2017140265 A1 WO2017140265 A1 WO 2017140265A1
Authority
WO
WIPO (PCT)
Prior art keywords
exposure
spot
workpiece
laser beam
optical path
Prior art date
Application number
PCT/CN2017/073957
Other languages
English (en)
French (fr)
Inventor
蓝科
戈亚萍
陈勇辉
Original Assignee
上海微电子装备（集团）股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 上海微电子装备（集团）股份有限公司 filed Critical 上海微电子装备（集团）股份有限公司
Priority to KR1020187026283A priority Critical patent/KR102143085B1/ko
Priority to JP2018543394A priority patent/JP6704462B2/ja
Priority to SG11201806983VA priority patent/SG11201806983VA/en
Priority to US15/999,783 priority patent/US10942458B2/en
Publication of WO2017140265A1 publication Critical patent/WO2017140265A1/zh

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/042—Automatically aligning the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/046—Automatically focusing the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70583—Speckle reduction, e.g. coherence control or amplitude/wavefront splitting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/54—Glass

Definitions

  • the present invention relates to the field of semiconductor technology, and in particular, to an exposure system, an exposure apparatus, and an exposure method.
  • laser Because laser has the advantages of high brightness, good monochromaticity and strong directivity, it is widely used in laser direct writing, laser packaging and other processing fields.
  • a laser galvanometer scanning system is commonly used, and its working principle is to pass the laser beam. After the beam expander is magnified and collimated, it passes through the X-scan galvanometer and the Y-scan galvanometer. After scanning the focus field mirror, the spot with a certain power density converges on the surface of the processed workpiece. The action of the laser and the workpiece requires a certain action time. In turn, the energy required for the machining process is provided to achieve machining of the workpiece.
  • the line width of the workpiece is different, so there is a certain requirement for the size of the focused spot.
  • the requirement for the exposure of the glass frit seal for the OLED device is twice the line width of the glass powder, and is used for roll to
  • the exposure spot size of the roll (volume-to-roll) process is required to be several tens of micrometers to several hundred micrometers.
  • the diameter of the focused spot for laser micromachining needs to be on the order of several tens of micrometers.
  • the exposure spot diameter for laser marking or laser drilling is generally It is on the order of tens of microns to tens of millimeters.
  • the object of the present invention is to provide an exposure system, an exposure apparatus and an exposure method.
  • the size of the spot generated by the design of the exposure system can cover several tens of micrometers to several hundred micrometers, and the spot can be switched on-line to meet different line widths.
  • the different requirements of the workpiece on the spot size improve the processing adaptability to different workpieces and save costs.
  • the present invention provides an exposure system including: a laser unit, a spot switching unit, and a lens unit; the laser unit emits a laser beam; the spot switching unit is based on a workpiece to be exposed The desired spot size is such that the laser beam is transmitted along one of a plurality of different optical paths to obtain a laser beam of a desired spot size; the lens unit is for changing the direction in which the laser beam is incident on the workpiece.
  • the exposure system determines a spot size required to process the workpiece according to a height of a spot power required to focus on the surface of the workpiece to be processed, and the spot size is compared with a spot threshold. After the ratio, the optical path to be transmitted by the laser beam is determined, and the spot switching unit is controlled to open the optical path.
  • the spot switching unit includes a first optical path and a second optical path, and the first optical path follows a diffraction limit principle to generate a first spot whose spot size is adjustable and smaller than the spot threshold, and the second optical path Following the principle of geometric imaging, a second spot having a spot size adjustable and greater than or equal to the spot threshold is generated.
  • the spot threshold is 100 ⁇ m.
  • the first optical path is composed of a first mirror, a first aperture, a second mirror and an optical component, and the second optical routing focusing mirror, the second aperture and the optical component are formed.
  • the switching unit further includes a beam splitting prism, the splitting prism splitting the laser beam into a first beam and a second beam, the first beam passing through the first beam path, and the second beam passing through The second optical path; controlling opening of the first optical path or the second optical path by closing and opening of the first aperture and the second aperture.
  • the laser unit comprises a light source component that outputs a laser beam, a beam expander set for zooming and expanding the spot of the laser beam, and a shaping component that shapes the spot topography.
  • the lens unit comprises a two-dimensional scanning galvanometer and a telecentric field mirror, wherein the two-dimensional scanning galvanometer deflects the laser beam in an X direction or a Y direction, and the telecentric field mirror ensures the laser The beam is incident perpendicularly onto the machined workpiece.
  • the present invention also provides an exposure apparatus comprising an exposure system, a workpiece stage and a measurement system, the exposure system being the exposure system described above.
  • the processed workpiece on the workpiece table is a rigid substrate
  • the measuring system is used to achieve alignment of the rigid substrate with the exposure system.
  • the processed workpiece on the workpiece table is a flexible substrate, and the workpiece table is a roll-to-roll transmission structure.
  • the roll-to-roll transfer structure comprises a release roll and a take-up roll placed symmetrically left and right, and an adsorption platform for adsorbing the flexible substrate.
  • the adsorption platform comprises a measurement area and an exposure area.
  • the measurement system includes an alignment sensor for measuring a horizontal position, a vertical sensor for measuring a vertical position, and a motion mechanism for performing a multi-degree of freedom motion.
  • the exposure apparatus further includes a mask plate and a mask table, wherein the mask plate is used for copying to generate the same exposure pattern, and the mask table is used for carrying and carrying the mask plate to perform multiple freedoms. Degree of movement.
  • the present invention also provides two exposure methods for exposure using the exposure apparatus described above.
  • the present invention also provides another exposure method, which can also be exposed by using the above exposure apparatus, comprising: Step 1, setting a workpiece on the workpiece table, the workpiece corresponding to a desired spot size, The spot size is determined according to the height of the spot power density focused on the surface of the processed workpiece; in step 2, the spot size is compared with the spot threshold to obtain a comparison result; and in step 3, the spot switching is controlled according to the comparison result.
  • the unit opens one of a plurality of different optical paths as the selected exposure light path; in step 4, the laser beam is emitted by the laser unit, and after passing through the exposure light path, the mask pattern is exposed onto the processed workpiece.
  • the spot switching unit includes a first optical path and a second optical path
  • the first optical path follows a diffraction limit principle to generate a first spot whose spot size is adjustable and smaller than a threshold value of the spot.
  • the second optical path follows a geometric imaging principle to produce a second spot whose spot size is adjustable and greater than or equal to the spot threshold.
  • the spot threshold value is 100 ⁇ m.
  • a measuring step is further included for performing alignment measurement and/or vertical measurement on the processed workpiece.
  • step 1 the processed workpiece is a rigid substrate, and the exposure position alignment measurement of the rigid substrate is performed before step 4.
  • step 1 the processed workpiece on the workpiece table is a flexible substrate, and the exposure position alignment measurement and the vertical measurement of the flexible substrate are performed before step 4.
  • the volume transfer structure is
  • the roll-to-roll transfer structure comprises a release roll and a take-up roll placed symmetrically left and right, and an adsorption platform for adsorbing the flexible substrate.
  • the adsorption platform comprises a measurement area and an exposure area.
  • the exposure system, the exposure device and the exposure method provided by the invention have the following beneficial effects:
  • the invention sets a spot switching unit in an exposure system, so that the laser beam is switched between different optical paths, thereby switching the size range of the spot, satisfying different requirements of different line width workpieces on the spot size, and improving the pair.
  • the processing adaptability of different workpieces effectively saves costs;
  • the present invention improves the positioning accuracy of the exposure spot by providing a mask in the exposure device, thereby improving the uniformity of the exposure dose;
  • the present invention sets an adsorption platform including a measurement area and an exposure area in a roll-to-roll transmission structure, and measures a position on a flexible substrate by a measurement system in a measurement area, and then transmits a flexible substrate to an exposure area, by exposure
  • the system performs exposure in the exposed area, and the measuring system can measure the horizontal position and the vertical position of the next soft substrate to be exposed in the measurement area, thereby effectively improving the exposure yield.
  • FIG. 1 is a schematic structural diagram of an exposure system according to Embodiment 1 of the present invention.
  • FIG. 2 is a schematic structural diagram of an exposure apparatus according to Embodiment 2 of the present invention.
  • Embodiment 3 is a top plan view of a workpiece processed according to Embodiment 2 of the present invention.
  • FIG. 4 is a schematic structural view of an exposure apparatus according to Embodiment 3 of the present invention.
  • FIG. 5 is a schematic top plan view of a flexible conductive film according to Embodiment 3 of the present invention.
  • FIG. 6 is a schematic structural diagram of a mask provided by Embodiment 3 of the present invention.
  • FIG. 7 is a schematic diagram of imaging alignment of a measurement system according to Embodiment 3 of the present invention.
  • FIG. 8 is a distribution diagram of measurement points for vertical measurement of a measurement system according to Embodiment 3 of the present invention.
  • FIG. 9 is a schematic structural diagram of an exposure apparatus according to Embodiment 4 of the present invention.
  • FIG. 10 is a flowchart of an exposure method according to Embodiment 5 of the present invention.
  • FIG. 11 is a flow chart of an exposure method according to Embodiment 6 of the present invention.
  • FIG. 12 is a flowchart of an exposure method according to Embodiment 7 of the present invention.
  • the core idea of the invention is that by setting a switching unit in the exposure system, the laser beam is switched between different optical paths, thereby switching the size range of the spot, satisfying different requirements of different line width workpieces on the spot size, and improving The processing adaptability to different workpieces is effective and cost-effective.
  • FIG. 1 is a schematic structural diagram of an exposure system according to Embodiment 1 of the present invention.
  • the exposure system 10 includes: a laser unit 11, a spot switching unit 12, and a lens unit 13; the laser unit 11 emits a laser beam; and the spot switching unit 12 corresponds to a workpiece material to be exposed.
  • the spot size is such that the laser beam is switched between different optical paths to obtain a laser beam corresponding to the spot size; the lens unit 13 changes the direction of the laser beam.
  • the exposure system 10 determines the spot size corresponding to the processed workpiece according to the height of the spot power required to focus on the surface of the processed workpiece according to the processed workpiece, and compares the spot size with the spot threshold value according to the spot size.
  • the spot switching unit switches different optical paths.
  • the laser unit 11 includes a light source assembly 111 that outputs a laser beam, a beam expanding mirror set 112 for zooming and expanding the spot of the laser beam, and a shaping assembly 113 that shapes the spot topography.
  • the spot switching unit 12 includes a first optical path a and a second optical path b, the first optical path a following a diffraction limit principle, generating an adjustable first spot smaller than the spot threshold, the second optical path b following The geometric imaging principle produces an adjustable second spot that is greater than or equal to the spot threshold.
  • the spot threshold value is 100 ⁇ m.
  • the first optical path a is composed of a first mirror 122, a first aperture 123, a second mirror 124 and an optical element 127.
  • the second optical path b is composed of a focusing mirror group 125, a second aperture 126 and an optical component. 127 composition.
  • the spot switching unit 12 further includes a beam splitting prism 121 that divides the laser beam into a first beam and a second beam, the first beam passing through the first optical path a, the second beam
  • the optical path through which the laser beam passes is determined by the second optical path b; by the closing and opening of the first aperture 123 and the second aperture 126.
  • the lens unit 13 includes two The scanning galvanometer 131 and the telecentric field mirror 132 perform X-direction or Y-direction deflection of the laser beam, and the telecentric field mirror 132 ensures that the laser beam is incident perpendicularly onto the workpiece 20.
  • the light source assembly 111 is configured to provide a single spectrum from the ultraviolet band to the infrared band or a broad spectrum with a bandwidth of less than 100 nm, and select the source wavelength according to the material properties of the workpiece 20.
  • the beam expanding mirror group 112 is used for zooming and expanding the spot to adjust the exposure spot size on-line to adapt to the spot size requirements of different workpieces.
  • the shaping component 113 shapes the beam profile into an arbitrary shape to improve the uniformity of the exposure dose.
  • the commonly used shaping component 113 has a diffractive optical element (DOE), a micro lens array, etc., and the commonly used shaping spot has a flat top, a square, an M shape, and the like.
  • DOE diffractive optical element
  • the beam splitting prism 121 is configured to divide the laser beam into a first beam and a second beam, the split ratio of which is proportional to the power density incident on the workpiece.
  • the first mirror 122 and the second mirror 124 are for reflecting the first light beam, and the diaphragm 123 is for opening and closing the first light beam.
  • the focusing mirror group 125 is for collimating the second light beam, and the second aperture 126 is for opening and closing the second light beam.
  • the upper region of the optical element 127 reflects the first beam, and the lower region of the optical element 127 transmits the second beam.
  • the optical path through which the first light beam passes is the first optical path a, and includes a light source assembly 111, a beam expanding mirror group 112, a shaping component 113, a beam splitting prism 121, a first mirror 122, and a first aperture 123.
  • a second mirror 124, an optical element 127, a two-dimensional scanning galvanometer 131, an optical path through which the telecentric field mirror 132 passes, and an optical path through which the second beam passes is a second optical path b, including a light source assembly 111, a beam expander The group 112, the shaping component 113, the beam splitting prism 121, the focusing mirror group 125, the second aperture 126, the optical element 127, the two-dimensional scanning galvanometer 131, and the optical path through which the telecentric field mirror 132 passes.
  • the first aperture 123 and the second aperture 126 are selectively switched in accordance with the requirements of the workpiece 20 for spot size.
  • the spot power density is high, then the spot size is required to be small, the first aperture 123 is turned on, and the second aperture 126 is turned off.
  • the first optical path follows the diffraction limit principle to generate a spot of less than 100 ⁇ m;
  • the two apertures 126 close the first aperture 123, and the second optical path follows the geometric imaging principle, and the generated light spot is larger than the first optical path.
  • the spot size requirement is less than 100 ⁇ m
  • the first optical path is used, and when the spot size is required to be not less than 100 ⁇ m, the second optical path is used.
  • the two-dimensional scanning galvanometer 131 is configured to perform X-direction and Y-direction deflection on the first beam or the second beam to realize scanning motion of the first beam or the second beam on the processed workpiece as required.
  • Telecentric field mirror 132 used to ensure the vertical incidence of the laser beam, avoiding the problem of vertical crosstalk at oblique incidence.
  • a pair of parallel light is output through the light source assembly 111.
  • the parallel light is expanded by the beam expander lens group 112, shaped by the shaping component 113, and split by the beam splitting prism 121 into a first light beam and a second light beam.
  • the first light beam passes through the first mirror 122.
  • the first aperture 123 and the second mirror 124 are reflected by the optical element 127, incident on the two-dimensional scanning galvanometer 131, and then focused onto the processed workpiece 20 through the telecentric field mirror 132; the second beam passes through the focusing mirror group 125.
  • the second aperture 126 is transmitted through the optical element 127, incident on the two-dimensional scanning galvanometer 131, and then imaged onto the workpiece 20 via the telecentric field mirror 132.
  • the exposure system provided by the invention enables the laser beam to switch between different optical paths by setting the spot switching unit, thereby switching the size range of the spot, satisfying different requirements of different line width workpieces on the spot size, and improving the pair.
  • the processing adaptability of different workpieces effectively saves costs.
  • the present invention provides an exposure apparatus including an exposure system, a workpiece stage, and a measurement system, wherein the exposure system employs the exposure system of the first embodiment.
  • FIG. 2 is a schematic structural diagram of an exposure apparatus according to Embodiment 2 of the present invention.
  • the exposure apparatus mainly includes an exposure system 10 for performing exposure processing on the workpiece 20, and a motion table 30 for providing horizontal movement of the exposure system 10 for positioning the workpiece 20.
  • the measuring system 40 for measuring and adjusting the workpiece stage 50 for processing the workpiece 20 pose is used to control the exposure system 10 and the master system 60 that controls the motion stage 30 and the workpiece stage 50.
  • the exposure system 10 is mounted on the exercise stage 30 with a plurality of horizontal movements along with the exercise stage 30.
  • the measurement system 40 is mounted on the exercise stage 30 with a plurality of horizontal movements along with the exercise stage 30.
  • the workpiece 20 is a rigid substrate.
  • the workpiece 20 is a glass substrate on which a plurality of OLED screens are arranged, and a schematic view of the workpiece is shown in FIG. 3 .
  • the workpiece 20 is a glass substrate, and the workpiece 20 includes 12 exposure patterns 201-212 for the OLED screen package.
  • the material of the exposure pattern is glass frit, and the workpiece alignment mark 22 for alignment is also included.
  • the embodiment includes four workpiece alignment marks 22, and the exposure spot 21 at a certain point in time is also indicated in the figure, the direction of the arrow being the direction in which the exposure spot 21 is scanned during exposure.
  • the exposure pattern and number on the machined workpiece 20 are not limited to the exposure pattern used in Fig. 3, but may be any achievable pattern.
  • the present embodiment is applicable to larger or smaller sized workpieces, as well as other exposure patterns and quantities.
  • the measurement System 40 is used to effect alignment of the glass substrate with exposure system 10.
  • the workpiece 20 is placed on the workpiece table 50, the workpiece 20 is moved under the measurement system 40, the measurement system 40 measures the workpiece alignment mark 21, and the substrate alignment position is obtained by the main control system 60.
  • the motion stage 30 moves the exposure system 10 to the first exposure station (at which the scanning field of the exposure system 10 covers the exposure patterns 201 and 202),
  • the control system 60 controls the exposure system 10 to perform scanning exposure on the exposure pattern 201 according to the set process parameters until the exposure pattern 201 is exposed, the laser output of the light source assembly 111 is turned off, and the exposure system 10 performs scanning exposure on the exposure pattern 202 until the exposure pattern 202 is performed.
  • the motion stage 30 moves the exposure system 10 to the next exposure station, repeating the above process, and the exposure station motion map is as shown by curve 23 in Fig. 3 until all exposure patterns are exposed.
  • the present invention can be equipped with multiple measurement systems and exposure systems to increase yield.
  • the exposure light source used in this embodiment is a 940 nm laser, and the exposure spot size is 0.6 mm.
  • the exposure light path opens the second optical path to close the first optical path.
  • the exposure field 10 of the exposure system 10 can cover two exposure patterns arranged in the X direction.
  • the present invention can produce a larger or smaller scanning field of view depending on the design of the exposure system, and the number of exposure patterns that can be covered by each scanning field of view can be further obtained based on the scanning field of view and the size of the exposure pattern.
  • the motion path design of the exposure system 10 is related to the scanning field of view and the size of the workpiece 20 to be processed. Further, when the scanning field of view is designed to be large enough, that is, the scanning field of view can cover all exposure positions, it is not necessary to move after scanning exposure. Exposure system 10.
  • the process parameters P and V set in this embodiment can satisfy the control equation of the softening bonding temperature of the glass frit, as follows:
  • K represents the thermal conductivity of the glass frit, and its corresponding thermal conductivity is inconsistent with the glass frit in the electrode lead region;
  • P represents the effective power of the laser incident, which is an adjustable amount;
  • a represents the diameter of the exposed spot, which is an adjustable amount, which can be passed Beam shaping or defocusing is adjusted;
  • v is the exposure spot scanning speed, which is the second adjustable amount because it affects the yield;
  • D is the thermal diffusion coefficient, determined by the material properties;
  • ⁇ is the material heat absorption coefficient;
  • L is the glass The material height is determined by the process requirements of the OLED.
  • the softening bonding temperature T of the glass frit is proportional to the laser incident effective power P, and inversely proportional to the square of the exposure spot diameter (a 2 ) and the square root of the scanning spot scanning speed (v 1/2 ),
  • the parameters are closely related. Therefore, in order to ensure that the softening bonding temperature of the glass frit (generally about 350 ° C) is uniformly stable, the laser incident effective power P and the spot scanning speed V need to be synchronously controlled in the OLED screen packaging process.
  • the present invention provides an exposure apparatus including an exposure system, a workpiece stage, and a measurement system, wherein the exposure system employs the exposure system of the first embodiment.
  • the workpiece is a flexible substrate.
  • the workpiece is a flexible conductive film.
  • the workpiece stage is a roll-to-roll transmission structure.
  • FIG. 4 is a schematic structural diagram of an exposure apparatus according to Embodiment 3 of the present invention.
  • the exposure apparatus mainly includes an exposure system 10 for exposing the flexible conductive film 20, and a motion stage 30 for providing the multi-degree-of-freedom movement of the exposure system 10 for the flexible conductive film 20.
  • a measurement system 40 for performing position measurement a roll-to-roll transfer structure 50 for replicating a mask 70 that produces the same exposure pattern, and a mask table 80 for carrying and carrying the mask 70 for multi-degree-of-freedom movement for
  • the exposure system 10 is controlled as well as a master system 60 that controls the motion stage 30, the control mask station 80, and the roll-to-roll transmission structure 50.
  • the mask 70 is positioned over the flexible conductive film 20 for replication to produce the same exposure pattern as on the flexible conductive film 20, and the vertical distance of the flexible conductive film 20 and the mask 70 does not exceed the depth of focus of the measurement system 40.
  • the exposure system 10 is mounted on the exercise stage 30, and the multi-degree of freedom motion is performed along with the exercise stage 30.
  • the measurement system 40 includes an alignment sensor 41 for measuring the horizontal position, a vertical sensor 42 for measuring the vertical position, and a motion mechanism 43 for performing multi-degree of freedom motion.
  • the roll-to-roll transfer structure 50 includes a release roll 51 and a take-up roll 52 which are symmetrically placed on the left and right sides for adsorbing the adsorption platform 53 of the flexible conductive film.
  • One end of the flexible conductive film 20 is wound around the unwinding roll 51, and the other end is wound.
  • the suction platform 53 flattens and adsorbs the flexible conductive film located on the unwinding roller 51 and the winding roller 52.
  • the flexible conductive film 20 used in the present embodiment is a roll-to-roll flexible film for a roll-to-roll process, and a top view thereof is shown in FIG.
  • the flexible conductive film 20 includes 12 exposure patterns 201 to 212, and further includes a workpiece alignment mark 22 for alignment, and additionally an exposure spot 21 at a certain moment is indicated in the figure, and the direction of the arrow is the exposure spot 21 during the exposure process.
  • the flexible conductive film 20 is not limited to the flexible film, and may include any processed workpiece suitable for the solution of the present invention, and the exposed pattern on the processed workpiece And the number is not limited to the exposure pattern used in Fig.
  • the motion path design of the exposure system 10 is related to the scanning field of view and the size of the workpiece to be processed. Further, when the scanning field of view is designed to be large enough, that is, the scanning field of view can cover all exposure positions, there is no need to move the exposure after scanning exposure. System 10.
  • FIG. 6 A schematic structural view of the mask 70 is shown in FIG. 6.
  • the size of the mask 70 is the same as that of the flat region of the flexible conductive film 20.
  • the size and shape of the mask pattern are exactly the same as those of the exposure pattern shown in FIG.
  • the pitch is the same, and the mask 70 includes a mask alignment mark 71 for mask alignment.
  • the black line on the mask 70 is an opaque area, and the rest is a light-transmitting area.
  • One end of the flexible conductive film 20 is wound around the unwinding roller 51, and the other end is wound around the winding roller 52.
  • the flexible conductive film 20 between the unwinding roller 51 and the winding roller 52 is flattened and adsorbed on the adsorption platform 53.
  • the measuring system 40 moves over the reticle 70.
  • the measuring system 40 measures the position of the mask alignment mark 71 and the workpiece alignment mark 22 and the exposed pattern line area, and the main control system 60 calculates the exposure posture of the exposure pattern 201 (X, Y, Rz, Z, Rx, Ry), the mask table 80 adjusts the attitude to meet the exposure posture requirement of the exposure pattern 201, and the motion stage 30 moves the exposure system 10 to the first exposure station (at the exposure station, the exposure system)
  • the scanning field of 10 covers the exposure patterns 201 and 202).
  • the main control system 60 turns on the exposure system 10 according to the set process parameters, and the exposure beam generated by the exposure system 10 passes through the mask 70.
  • the same exposure pattern as the exposure pattern 201 is generated, and the exposure pattern 201 is scanned and exposed until the exposure pattern 201 is exposed, and the laser output of the light source unit 111 is turned off.
  • the measurement system 40 is synchronously operated.
  • the position measurement is performed to the next position, the main control system 60 calculates the exposure posture of the exposure pattern 202, the mask table 80 adjusts the posture to meet the exposure posture requirement of the exposure pattern 202, and the main control system 60 turns on the exposure system 10 according to the set process parameters (
  • the process parameter can obtain the exposure power, the exposure spot diameter, and the exposure spot scanning speed from the required exposure dose.
  • the exposure beam generated by the exposure system 10 passes through the mask 70 to generate the same exposure pattern as the exposure pattern 202, and the exposure pattern 202 is scanned. The exposure is continued until the exposure pattern 202 is exposed, and the laser output of the light source unit 111 is turned off.
  • the motion stage 30 moves the exposure system 10 to the next exposure station, and repeats the above process.
  • the exposure station motion diagram is as shown in the curve 23 of FIG. 5 until all the flexible conductive films 20 are exposed to the exposure pattern on the adsorption platform 53. Flexibility by unwinding the stick 51 and winding the stick 52
  • the next portion to be exposed of the conductive film 20 is moved onto the adsorption stage 53, and the above process is repeated until all of the exposure images are exposed.
  • the positioning accuracy of the exposure spot is improved by the mask, thereby improving the uniformity of the exposure dose.
  • the invention can select whether to use the mask plate according to the exposure spot positioning accuracy requirement, or can also support multiple sets of measurement systems 40 to improve the yield.
  • the exposure light source used in this embodiment is a 355 nm laser light having an exposure spot size of 4 mm, and the exposure light path opens the second optical path to close the first optical path.
  • the scanning system 10 at the station scan field can cover two X-direction exposure patterns.
  • the invention can generate a larger or smaller scanning field of view according to the design of the exposure system, and according to the scanning field of view and the size of the exposure pattern, the number of exposure patterns that can be covered by each scanning field can be further obtained, and the scanning field of view can cover the Y direction. Exposure graphics.
  • FIG. 7 is a schematic view showing the imaging alignment mark 71 and the workpiece alignment mark 22 detected by the measuring system 40 on the imaging surface of the embodiment.
  • the mask alignment mark and the workpiece alignment mark may be in other forms, and the spatial position between the two needs to ensure that both are simultaneously imaged into the field of view of the measurement system.
  • FIG. 8 shows three measurement points for the vertical measurement of the measurement system 40 of the present embodiment, and 201 is an exposure pattern.
  • the adsorption platform includes a measurement area 53 and an exposure area 54, and the flexible conductive film 20 adsorbed by the exposure area 54 is used for exposure and measurement area.
  • the adsorbed flexible conductive film 20 is used for measurement.
  • the flexible conductive film 20 is measured by the measurement system 40 at the measurement area 53, and then the flexible conductive film 20 is transferred to the exposure area 54, and the flexible conductive film 20 is exposed by the exposure system 10 at the exposure area 54, at which time the measurement system 40 can be measured.
  • the area 53 measures the horizontal position and the vertical position of the next flexible conductive film 20 to be exposed, thereby effectively improving the exposure yield.
  • the present invention provides an exposure method which can be exposed by using the above exposure apparatus.
  • the exposure method includes:
  • Step S1 setting a machining workpiece on the workpiece table, the machining workpiece corresponding to a spot size, wherein the spot size is determined according to the height of the spot power density focused on the surface of the workpiece;
  • Step S2 obtaining a comparison result according to the spot size, compared with the spot threshold value
  • Step S3 control the spot switching unit, switch different optical paths, and select exposure Light path
  • step S4 a laser beam is emitted by the laser unit, and after passing through the exposure light path, the mask pattern is exposed onto the processed workpiece.
  • the spot switching unit comprises a first optical path and a second optical path
  • the first optical path follows a diffraction limit principle, and generates an adjustable first spot smaller than the spot threshold
  • the second The optical path follows the principle of geometric imaging, producing an adjustable second spot that is greater than the threshold value of the spot.
  • the spot critical value is 100 ⁇ m.
  • a measuring step is also included for performing alignment measurements and/or vertical measurements on the machined workpiece.
  • step S1 when the workpiece is a rigid substrate, the exposure position alignment measurement of the rigid substrate is performed before step S4.
  • step S1 when the processed workpiece on the workpiece table is a flexible substrate, exposure level alignment measurement and vertical measurement of the flexible substrate are performed before step S4, and the workpiece stage is roll-to-roll transmission. structure.
  • the roll-to-roll transfer structure includes a release roll and a take-up wand placed symmetrically on the left and right sides for adsorbing the adsorption platform of the flexible substrate.
  • the adsorption platform includes a measurement area and an exposure area.
  • the present invention provides an exposure method using the exposure apparatus of the second embodiment.
  • FIG. 11 is a flowchart of an exposure method according to Embodiment 6 of the present invention.
  • the exposure method provided by the present invention includes:
  • Step S1 placing the processed workpiece 20 onto the workpiece stage 50;
  • Step S2 the measuring system 40 measures the workpiece alignment mark 21 to obtain the position of the graphic to be exposed;
  • Step S3 adjusting the posture of the workpiece stage 50 to realize the exposure posture requirement of the exposure pattern
  • Step S4 the exercise stage 30 moves the exposure system 10 to the exposure station;
  • Step S5 the exposure system 10 exposes the exposure pattern
  • Step S6 adjusting the posture of the workpiece stage 50 to realize the exposure posture requirement of the next exposure pattern
  • Step S7 the exposure system 10 exposes the next exposure pattern
  • Step S8 the exposure system 10 moves to the next exposure station
  • Step S9 The above steps S3 to S8 are repeated until the exposure pattern on the entire processed workpiece 20 is exposed.
  • step S8 can be omitted.
  • the present invention provides an exposure method using the exposure apparatus of the third embodiment.
  • FIG. 12 is a flowchart of an exposure method according to Embodiment 6 of the present invention.
  • the exposure method provided by the present invention includes:
  • Step S1 One end of the flexible conductive film 20 is wound around the unwinding roller 51, and the other end is wound around the winding roller 52.
  • the flexible conductive film 20 between the unwinding roller 51 and the winding roller 52 is flattened and adsorbed. Adsorption platform 53.
  • Step S2 the measurement system 40 moves over the mask 70, and measures the position of the mask alignment mark 71 and the workpiece alignment mark 22 and the exposure pattern line to obtain the position of the pattern to be exposed;
  • Step S3 adjusting the posture of the mask table 80 to achieve the exposure posture requirement of the exposure pattern
  • Step S4 the exercise stage 30 moves the exposure system 10 to the exposure station;
  • Step S5 the exposure system 10 exposes the exposure pattern, and the measurement system 40 measures the position of the next exposure pattern;
  • Step S6 adjusting the posture of the mask table 80 to achieve the exposure posture requirement of the next exposure pattern
  • Step S7 the exposure system 10 exposes the next exposure pattern
  • Step S8 the exposure system 10 moves to the next exposure station
  • Step S9 repeating the above steps S2 to S8 until the entire exposure station of the current exposure portion is completely exposed, the next portion to be exposed of the flexible conductive film 20 is moved to the adsorption platform 53 by the unwinding roller 51 and the winding roller 52. on;
  • Step S10 The above steps S2 to S9 are repeated until the exposure pattern of one roll of the flexible conductive film 20 is exposed.
  • the scanning field of view can completely cover the flexible conductive film 20 adsorbed on the adsorption platform 53, the step S8 can be omitted.
  • the fourth embodiment differs from the third embodiment only in that the adsorption platform includes the measurement area 53 and the exposure area 54, the method of performing exposure by using the exposure apparatus described in Embodiment 4 and the exposure apparatus according to Embodiment 3 are used.
  • the method of performing exposure differs only in that while the exposure system 10 exposes the pattern of the exposure region 54, the measurement system 40 measures the horizontal position and the vertical position of the next flexible conductive film 20 to be exposed in the measurement region 53, thereby Effectively improve the exposure yield. So for Detailed method steps are not described again.
  • the exposure system, the exposure apparatus, and the exposure method provided by the present invention switch the laser beam between different optical paths by setting a spot switching unit in the exposure system, thereby switching the size range of the spot to satisfy Different requirements for the spot size of different line width workpieces improve the processing adaptability to different workpieces and effectively save the cost; by setting the adsorption platform including the measurement area and the exposure area in the roll-to-roll transmission structure, The measuring area is measured by the measuring system on the flexible substrate, and then the flexible substrate is transferred to the exposed area, and exposed by the exposure system in the exposed area. At this time, the measuring system can horizontally position the next soft substrate to be exposed in the measuring area. Position and vertical position measurement, which effectively improves the exposure yield.

Abstract

一种曝光系统（10）、曝光装置及曝光方法，曝光系统（10）包括：激光单元（11）、光斑切换单元（12）以及透镜单元（13）；所述激光单元（11）发射激光束；所述光斑切换单元（12），根据待曝光的加工工件所需的光斑尺寸，使所述激光束沿多个不同光路中的一个光路传输，以获得所需光斑尺寸的激光束；所述透镜单元（13）用于改变所述激光束入射至加工工件的方向。通过光斑切换单元（12）的设置，使得激光束在不同光路之间进行切换，从而对光斑的尺寸范围进行切换，满足了不同线宽工件对光斑尺寸的不同要求，提高了对不同工件的加工适应性，有效的节约了成本。

Description

曝光系统、曝光装置及曝光方法 技术领域
本发明涉及半导体技术领域，具体涉及一种曝光系统、曝光装置及曝光方法。
背景技术
由于激光具有亮度高、单色性好、方向性强等优点，被广泛应用于激光直写、激光封装等加工领域，常用的是一种激光振镜扫描系统，其工作原理是将激光束经扩束镜放大准直后依次经过X扫描振镜、Y扫描振镜，经过扫描聚焦场镜后，以一定功率密度的光斑会聚到加工工件表面上，激光与工件的作用需要一定的作用时间，进而提供加工过程所需的能量，从而实现对工件的加工。
由于不同应用工况下，工件线宽不同，因而对聚焦光斑的大小有一定的要求，如用于OLED器件的玻璃粉密封对曝光光斑的要求为玻璃粉线宽的2倍，用于roll to roll(卷对卷)工艺的曝光光斑要求为几十微米到几百微米，用于激光微细加工的聚焦光斑直径要求几十微米量级，用于激光打标或激光钻孔的曝光光斑直径一般为几十微米到几十毫米量级。针对不同线宽的工件，需要更换设备来实现，对工件的不同线宽适应性较差，成本较贵。
发明内容
本发明的目的在于提供一种曝光系统、曝光装置及曝光方法，通过对曝光系统的设计产生的光斑尺寸可覆盖几十微米到几百微米，同时可对光斑进行在线切换，满足了不同线宽工件对光斑尺寸的不同要求，提高了对不同工件的加工适应性，有效节约成本。
为实现上述目的及其他相关目的，本发明提供一种曝光系统，包括：激光单元、光斑切换单元以及透镜单元；所述激光单元发射激光束；所述光斑切换单元，根据待曝光的加工工件所需的光斑尺寸，使所述激光束沿多个不同光路中的一个光路传输，以获得所需光斑尺寸的激光束；所述透镜单元用于改变所述激光束入射至加工工件的方向。
可选的，所述曝光系统是根据所述加工工件要求聚焦到所述加工工件表面的光斑功率密度高低，确定所述加工工件所需的光斑尺寸，通过将所述光斑尺寸与光斑临界值相比后，确定所述激光束将要传输的光路，并控制所述光斑切换单元打开所述光路。
可选的，所述光斑切换单元包括第一光路与第二光路，所述第一光路遵循衍射极限原理，产生光斑尺寸可调整且小于所述光斑临界值的第一光斑，所述第二光路遵循几何成像原理，产生光斑尺寸可调整且大于等于所述光斑临界值的第二光斑。
可选的所述光斑临界值为100μm。
可选的，所述第一光路由第一反射镜、第一光阑、第二反射镜与光学元件组成，所述第二光路由聚焦镜组、第二光阑与所述光学元件组成。
可选的，所述切换单元还包括分光棱镜，所述分光棱镜将所述激光束分为第一光束与第二光束，所述第一光束经过所述第一光路，所述第二光束经过所述第二光路；通过所述第一光阑与第二光阑的关闭与打开来控制所述第一光路或第二光路的打开。
可选的，所述激光单元包括输出激光束的光源组件、用于对所述激光束的光斑进行变倍扩束的扩束镜组以及对所述光斑形貌进行整形的整形组件。
可选的，所述透镜单元包括二维扫描振镜与远心场镜，所述二维扫描振镜对所述激光束进行X向或Y向偏转，所述远心场镜保证所述激光束垂直入射至加工工件上。
相应的，本发明还提供一种曝光装置，包括曝光系统、工件台与测量系统，所述曝光系统为上述的曝光系统。
可选的，位于所述工件台上的加工工件为硬性基板，所述测量系统用于实现所述硬性基板与所述曝光系统的对准。
可选的，位于所述工件台上的加工工件为软性基板，所述工件台为卷对卷传输结构。
可选的，所述卷对卷传输结构包括左右对称放置的放卷棍和收卷棍，以及用于吸附所述软性基板的吸附平台。
可选的，所述吸附平台包括测量区域与曝光区域。
可选的，所述测量系统包括用于测量水平向位置的对准传感器，测量垂向位置的垂向传感器以及可进行多自由度运动的运动机构。
可选的，所述曝光装置还包括掩膜版与掩膜台，所述掩膜版用于复制产生相同的曝光图形，所述掩膜台用于承载和携带所述掩膜版进行多自由度运动。
相应的，本发明还提供两种曝光方法，采用上述的曝光装置进行曝光。
相应的，本发明还提供另一种曝光方法，也可采用上述的曝光装置进行曝光，包括，步骤1，在工件台上设置加工工件，所述加工工件对应一所需的光斑尺寸，所述光斑尺寸是根据要求聚焦到所述加工工件表面的光斑功率密度高低来确定；步骤2，将上述光斑尺寸与光斑临界值相比，获得比较结果；步骤3，根据所述比较结果，控制光斑切换单元，打开多个不同的光路中的一个作为选定曝光光路；步骤4，通过激光单元发射激光束，通过上述曝光光路之后，将掩膜图案曝光到所述加工工件上。
可选的，在步骤3中，所述光斑切换单元包括第一光路与第二光路，所述第一光路遵循衍射极限原理，产生光斑尺寸可调整且小于所述光斑临界值的第一光斑，所述第二光路遵循几何成像原理，产生光斑尺寸可调整且大于等于所述光斑临界值的第二光斑。
可选的，所述光斑临界值为100μm。
可选的，在步骤4之前，还包括测量步骤，用于对所述加工工件，进行对准测量和/或垂向测量。
可选的，在步骤1中，所述加工工件为硬性基板，在步骤4之前进行所述硬性基板的曝光位对准测量。
可选的，在步骤1中，位于所述工件台上的加工工件为软性基板，在步骤4之前进行所述软性基板的曝光位对准测量和垂向测量，所述工件台为卷对卷传输结构。
可选的，所述卷对卷传输结构包括左右对称放置的放卷棍和收卷棍，以及用于吸附软性基板的吸附平台。
可选的，所述吸附平台包括测量区域与曝光区域。
与现有技术相比，本发明所提供的曝光系统、曝光装置及曝光方法的有益效果是：
1、本发明通过在曝光系统中设置光斑切换单元，使得激光束在不同光路之间进行切换，从而对光斑的尺寸范围进行切换，满足了不同线宽工件对光斑尺寸的不同要求，提高了对不同工件的加工适应性，有效的节约了成本；
2、本发明通过在曝光装置中设置掩膜版，提高了曝光光斑的定位精度，从而提高了曝光剂量的均匀性；
3、本发明通过在卷对卷传输结构中设置包括测量区域与曝光区域在内的吸附平台，在测量区域由测量系统对软性基板测量位置，然后再传输软性基板至曝光区域，由曝光系统在曝光区域进行曝光，此时测量系统可在测量区域对下一待曝光软性基板进行水平向位置和垂向位置测量，从而有效的提高了曝光产率。
附图说明
图1为本发明实施例一所提供的曝光系统的结构示意图。
图2为本发明实施例二所提供的曝光装置的结构示意图
图3为本发明实施例二所提供的加工工件的俯视示意图。
图4为本发明实施例三所提供的曝光装置的结构示意图。
图5为本发明实施例三所提供的柔性导电膜的俯视示意图。
图6为本发明实施例三所提供的掩膜版的结构示意图。
图7为本发明实施例三所提供的测量系统对准标记成像示意图。
图8为本发明实施例三所提供的测量系统垂向测量的测量点分布图。
图9为本发明实施例四所提供的曝光装置的结构示意图。
图10为本发明实施例五所提供的曝光方法的流程图。
图11为本发明实施例六所提供的曝光方法的流程图。
图12为本发明实施例七所提供的曝光方法的流程图。
具体实施方式
为使本发明的内容更加清楚易懂，以下结合说明书附图，对本发明的内容做进一步说明。当然本发明并不局限于该具体实施例，本领域的技术人员所熟知的一般替换也涵盖在本发明的保护范围内。
其次，本发明利用示意图进行了详细的表述，在详述本发明实例时，为了便于说明，示意图不依照一般比例局部放大，不应对此作为本发明的限定。
本发明的核心思想是：通过在曝光系统中设置切换单元，使得激光束在不同光路之间进行切换，从而对光斑的尺寸范围进行切换，满足了不同线宽工件对光斑尺寸的不同要求，提高了对不同工件的加工适应性，有效节约成本。
【实施例一】
请参考图1，其为本发明实施例一所提供的曝光系统的结构示意图。如图1所示，所述曝光系统10包括：激光单元11、光斑切换单元12以及透镜单元13；所述激光单元11发射激光束；所述光斑切换单元12，根据需曝光的加工工件材质对应的光斑尺寸，使所述激光束在不同光路之间进行切换，获得对应光斑尺寸的激光束；所述透镜单元13改变所述激光束的方向。
所述曝光系统10是根据所述加工工件要求聚焦到所述加工工件表面的光斑功率密度高低，确定所述加工工件对应的光斑尺寸，根据所述光斑尺寸与光斑临界值相比后，控制所述光斑切换单元切换不同光路。
所述激光单元11包括输出激光束的光源组件111、用于对所述激光束的光斑进行变倍扩束的扩束镜组112以及对所述光斑形貌进行整形的整形组件113。所述光斑切换单元12包括第一光路a与第二光路b，所述第一光路a遵循衍射极限原理，产生可调整的小于所述光斑临界值的第一光斑，所述第二光路b遵循几何成像原理，产生可调整的大于等于所述光斑临界值的第二光斑。其中，所述光斑临界值为100μm。所述第一光路a由第一反射镜122、第一光阑123、第二反射镜124与光学元件127组成，所述第二光路b由聚焦镜组125、第二光阑126与光学元件127组成。所述光斑切换单元12还包括分光棱镜121，所述分光棱镜121将所述激光束分为第一光束与第二光束，所述第一光束经过所述第一光路a，所述第二光束经过所述第二光路b；通过所述第一光阑123与第二光阑126的关闭与打开来决定所述激光束经过的光路。所述透镜单元13包括二 维扫描振镜131与远心场镜132，所述二维扫描振镜131对激光束进行X向或Y向偏转，所述远心场镜132保证激光束垂直入射至加工工件20上。
所述光源组件111用于提供从紫外波段至红外波段的某一单光谱或是带宽小于100nm的宽光谱，根据加工工件20的材料特性选择光源波长。所述扩束镜组112用于将光斑进行变倍扩束，以在线调整曝光光斑尺寸适应不同工件对光斑尺寸要求。所述整形组件113将光束形貌进行整形成任意形状，提高曝光剂量的均匀性。常用的整形组件113有衍射光学元件(DOE)、微透镜阵列(Micro lens array)等，常用的整形光斑形貌有平顶、方形、M形等。
所述分光棱镜121用于将所述激光束分成第一光束和第二光束，其分束比根据入射到加工工件上的功率密度进行配比。第一反射镜122与第二反射镜124用于将第一光束反射，所述光阑123用于打开与关闭所述第一光束。所述聚焦镜组125用于将第二光束准直，所述第二光阑126用于打开与关闭所述第二光束。所述光学元件127的上部区域对第一光束进行反射，所述光学元件127的下部区域对第二光束进行透射。
本实施例中，所述第一光束经过的光路为第一光路a，包括由光源组件111，扩束镜组112，整形组件113，分光棱镜121，第一反射镜122，第一光阑123，第二反射镜124，光学元件127，二维扫描振镜131，远心场镜132经过的光路，所述第二光束经过的光路为第二光路b，包括由光源组件111，扩束镜组112，整形组件113，分光棱镜121，聚焦镜组125，第二光阑126，光学元件127，二维扫描振镜131，远心场镜132经过的光路。
第一光阑123和第二光阑126根据加工工件20对光斑尺寸的要求进行选择开关。当加工工件要求聚焦到表面的光斑功率密度高时，则要求光斑尺寸小，打开第一光阑123，关闭第二光阑126，第一光路遵循衍射极限原理，产生小于100μm的光斑；打开第二光阑126，关闭第一光阑123，第二光路遵循几何成像原理，产生的光斑较第一光路大。当光斑尺寸要求小于100μm时，使用第一光路，当光斑尺寸要求不小于100μm时，使用第二光路。
所述二维扫描振镜131用于对第一光束或第二光束进行X向、Y向偏转，以实现第一光束或第二光束按所需要求在加工工件上扫描运动。所述远心场镜 132，用于保证激光束垂直入射，避免了倾斜入射时垂向串扰问题。
经过光源组件111输出一束平行光，平行光经过扩束镜组112扩束，经过整形组件113整形，经过分光棱镜121分光为第一光束和第二光束，第一光束经过第一反射镜122、第一光阑123、第二反射镜124，经过光学元件127反射，入射到二维扫描振镜131，再经过远心场镜132聚焦到加工工件20上；第二光束经过聚焦镜组125，第二光阑126，经过光学元件127透射，入射到二维扫描振镜131，再经过远心场镜132成像到加工工件20上。
本发明提供的曝光系统，通过光斑切换单元的设置，使得激光束在不同光路之间进行切换，从而对光斑的尺寸范围进行切换，满足了不同线宽工件对光斑尺寸的不同要求，提高了对不同工件的加工适应性，有效的节约了成本。
【实施例二】
本发明提供一种曝光装置，包括曝光系统、工件台与测量系统，其中所述曝光系统采用实施例一所述的曝光系统。
请参考图2，其为本发明实施例二所提供的曝光装置的结构示意图。如图2所示，所述曝光装置主要包括：用于对加工工件20进行曝光加工的曝光系统10，用于提供曝光系统10进行水平向运动的运动台30，用于对加工工件20进行位置测量的测量系统40，用于承载并调整加工工件20位姿姿态的工件台50，用于控制曝光系统10以及控制运动台30和工件台50的主控系统60。曝光系统10安装在运动台30上，随着运动台30一起进行多水平向运动。测量系统40安装在运动台30上，随着运动台30一起进行多水平向运动。
所述加工工件20为硬性基板，本实施例中所述加工工件20为排列多个OLED屏幕的玻璃基板，其俯视示意图如图3所示。加工工件20为一块玻璃基板，加工工件20上包含12个用于OLED屏幕封装的曝光图形201～212，该曝光图形的材料为玻璃料，还包含用于对准的工件对准标记22，本实施例包含4个工件对准标记22，另外在图中还标示出某一时刻的曝光光斑21，箭头方向为曝光光斑21在曝光过程中所扫描的方向。加工工件20上的曝光图形和数量不仅仅局限于图3所用的曝光图形，可为任意可实现的图形。另外，本实施例适用于更大或更小尺寸的加工工件，也可适用于其他曝光图形和数量。所述测量 系统40用于实现玻璃基板与曝光系统10的对准。
请继续参考图2，加工工件20放置到工件台50上，将加工工件20运动到测量系统40下方，测量系统40测量工件对准标记21，由主控系统60得到基板对准位置，工件台50调整姿态以满足加工工件20的曝光姿态要求，运动台30将曝光系统10运动到第一曝光工位(在该曝光工位，曝光系统10的扫描视场覆盖曝光图形201和202)，主控系统60根据设置的工艺参数控制曝光系统10对曝光图形201进行扫描曝光，直至曝光图形201曝光完毕，关闭光源组件111的激光输出，曝光系统10对曝光图形202进行扫描曝光，直至曝光图形202曝光完毕，关闭光源组件111的激光输出。运动台30将曝光系统10运动到下一个曝光工位，重复上述过程，曝光工位运动图如图3中曲线23所示，直至所有曝光图形曝光完毕。本发明可配备多个测量系统和曝光系统以提高产率。
本实施例所用的曝光光源为940nm激光，曝光光斑尺寸为0.6mm，曝光光路打开第二光路，关闭第一光路。本实施例所涉及的曝光工位，曝光系统10处在该工位扫描视场可覆盖两个排列在X向的曝光图形。本发明可根据曝光系统的设计产生更大或更小的扫描视场，根据扫描视场和曝光图形尺寸可进一步得到每个扫描视场能覆盖的曝光图形数目。曝光系统10的运动路径设计与扫描视场和加工工件20尺寸大小有关，更近一步，当扫描视场设计的足够大，即扫描视场能够覆盖所有曝光位，则不需要在扫描曝光后移动曝光系统10。
本实施例所设置的工艺参数P、V可满足玻璃料软化键合温度T控制方程，如下:
Figure PCTCN2017073957-appb-000001
其中，K代表玻璃料的热导率，在电极引线区其对应热导率与玻璃料不一致；P代表激光入射有效功率，为可调整量；a代表曝光光斑直径，为可调整量，可通过光束整形或离焦等进行调整；v代表曝光光斑扫描速度，为次可调整量，因为其会影响产率；D代表热扩散系数，由材料属性决定；ε代表材料热吸收系数；L代表玻璃料高度，由OLED的工艺要求决定。
由控制方程(1)可知，玻璃料软化键合温度T与激光入射有效功率P成正比，而与曝光光斑直径平方(a2)及曝光光斑扫描速度平方根(v1/2)成反比， 三个参数密切相关。因此，为保证玻璃料的软化键合温度(一般约为350℃)均一稳定，故在OLED屏幕封装过程中需要对激光入射有效功率P与光斑扫描速度V进行同步控制。
【实施例三】
本发明提供一种曝光装置，包括曝光系统、工件台与测量系统，其中所述曝光系统采用实施例一所述的曝光系统。
加工工件为软性基板，本实施例中，所述加工工件为柔性导电膜。相应的，所述工件台为卷对卷传输结构。
请参考图4，其为本发明实施例三所提供的曝光装置的结构示意图。如图4所示，所述曝光装置主要包括：用于对柔性导电膜20进行曝光的曝光系统10，用于提供曝光系统10进行多自由度运动的运动台30，用于对柔性导电膜20进行位置测量的测量系统40，卷对卷传输结构50，用于复制产生相同曝光图形的掩膜版70，用于承载和携带掩膜版70进行多自由度运动的掩膜台80，用于控制曝光系统10以及控制运动台30、控制掩膜台80和卷对卷传输结构50的主控系统60。掩膜版70位于柔性导电膜20上方，用于复制产生与柔性导电膜20上相同的曝光图形，柔性导电膜20和掩膜版70的垂向距离不超过测量系统40的焦深范围。
曝光系统10安装在运动台30上，随着运动台30一起进行多自由度运动。测量系统40包括用于测量水平向位置的对准传感器41，和测量垂向位置的垂向传感器42以及可进行多自由度运动的运动机构43。卷对卷传输结构50包括左右对称放置的放卷棍51和收卷棍52，用于吸附柔性导电膜的吸附平台53，柔性导电膜20一端卷绕在放卷棍51上，另一端卷绕在收卷棍52上，吸附平台53展平吸附位于放卷棍51和收卷棍52的柔性导电膜。
本实施例所用的柔性导电膜20为用于roll to roll(卷对卷)制程的卷对卷柔性薄膜，其俯视示意图如图5所示。柔性导电膜20上包含12个曝光图形201～212，还包含用于对准的工件对准标记22，另外在图中标示出某一时刻的曝光光斑21，箭头方向为曝光光斑21在曝光过程中所扫描的方向。柔性导电膜20不局限于柔性薄膜，可包括任何适用于本发明方案的加工工件，加工工件上的曝光图形 和数量不仅仅局限于图5所用的曝光图形，可为任意本发明可实现的图形，曝光图形的线宽可为几十微米到几百毫米。本发明适用于更大或更小尺寸的加工工件，也可适用于其他曝光图形和数量。曝光系统10的运动路径设计与扫描视场和加工工件尺寸大小有关，更近一步，当扫描视场设计的足够大，即扫描视场能够覆盖所有曝光位，则不需要在扫描曝光后移动曝光系统10。
掩膜版70的结构示意图如图6所示，掩膜版70的尺寸与柔性导电膜20展平区域尺寸相同，掩膜版图形尺寸和形状与图5所示的曝光图形完全相同，曝光图形间距相同，掩膜版70上包含有用于掩膜版对准的掩膜对准标记71，掩膜版70上黑色线条为不透光区域，其余部分为透光区域。
柔性导电膜20一端卷绕在放卷棍51上，另一端卷绕在收卷棍52上，位于放卷棍51和收卷棍52之间的柔性导电膜20展平吸附在吸附平台53上，测量系统40运动到掩膜版70上方，测量系统40测量掩膜对准标记71和工件对准标记22位置及曝光图形线条区域，由主控系统60计算曝光图形201的曝光姿态(X、Y、Rz、Z、Rx、Ry)，掩膜台80调整姿态以满足曝光图形201的曝光姿态要求，运动台30将曝光系统10运动到第一曝光工位(在该曝光工位，曝光系统10的扫描视场覆盖曝光图形201和202)，待曝光图形201的曝光姿态调整完毕，主控系统60根据设置的工艺参数开启曝光系统10，曝光系统10产生的曝光光束透过掩膜版70产生与曝光图形201相同的曝光图形，对曝光图形201进行扫描曝光，直至曝光图形201曝光完毕，关闭光源组件111的激光输出，在曝光图形201曝光过程中，同步地，测量系统40运动到下一个位置进行位置测量，主控系统60计算曝光图形202的曝光姿态，掩膜台80调整姿态以满足曝光图形202的曝光姿态要求，主控系统60根据设置的工艺参数开启曝光系统10(该工艺参数可由需求曝光剂量得到曝光功率、曝光光斑直径、曝光光斑扫描速度)，曝光系统10产生的曝光光束透过掩膜版70产生与曝光图形202相同的曝光图形，对曝光图形202进行扫描曝光，直至曝光图形202曝光完毕，关闭光源组件111的激光输出。运动台30将曝光系统10运动到下一曝光工位，重复上述过程，曝光工位运动图如图5曲线23所示，直至所有柔性导电膜20展开于吸附平台53上的曝光图形曝光完毕，通过放卷棍51和收卷棍52使柔性 导电膜20的下一待曝光部分移动至吸附平台53上，重复上述过程，直至所有曝光图像曝光完毕。本实施例通过掩膜版提高曝光光斑的定位精度，从而提高了曝光剂量的均匀性。本发明可根据曝光光斑定位精度要求选择是否使用掩膜版，也可配套多套测量系统40以提高产率。
本实施例所用的曝光光源为355nm激光，曝光光斑尺寸为4mm，曝光光路打开第二光路，关闭第一光路。本实施例所涉及的曝光工位，曝光系统10处在该工位扫描视场可覆盖两个排列在X向曝光图形。本发明可根据曝光系统的设计产生更大或更小的扫描视场，根据扫描视场和曝光图形尺寸可进一步得到每个扫描视场能覆盖的曝光图形数目，扫描视场可以覆盖Y向排列的曝光图形。
图7为本实施例测量系统40在成像面所探测到的掩膜对准标记71和工件对准标记22的成像示意图。掩膜对准标记和工件对准标记可以是其它形式，两者之间空间位置需确保两者同时成像到测量系统的视场中。图8为本实施例测量系统40用于垂向测量的三个测量点，201为曝光图形。
【实施例四】
本发明提供一种曝光装置，如图9所示，在实施例三的基础上，所述吸附平台包括测量区域53与曝光区域54，曝光区域54吸附的柔性导电膜20用于曝光，测量区域53吸附的柔性导电膜20用于测量。柔性导电膜20在测量区域53由测量系统40测量位置，然后再传输柔性导电膜20至曝光区域54，由曝光系统10在曝光区域54对柔性导电膜20曝光，此时测量系统40可在测量区域53对下一待曝光柔性导电膜20进行水平向位置和垂向位置测量，从而有效的提高了曝光产率。
【实施例五】
本发明提供一种曝光方法，可采用上述的曝光装置进行曝光，请参考图10所示，所述曝光方法包括：
步骤S1，在工件台上设置加工工件，所述加工工件对应光斑尺寸，所述光斑尺寸是根据要求聚焦到所述加工工件表面的光斑功率密度高低来确定；
步骤S2，根据上述光斑尺寸，与光斑临界值相比，获得比较结果；
步骤S3，根据所述比较结果，控制光斑切换单元，切换不同光路，选定曝 光光路；
步骤S4，通过激光单元发射激光束，通过上述曝光光路之后，将掩膜图案，曝光到所述加工工件上。
其中，在步骤S3中，所述光斑切换单元包括第一光路与第二光路，所述第一光路遵循衍射极限原理，产生可调整的小于所述光斑临界值的第一光斑，所述第二光路遵循几何成像原理，产生可调整的大于所述光斑临界值的第二光斑。所述光斑临界值为100μm。在步骤S4之前，还包括测量步骤，用于对所述加工工件，进行对准测量和/或垂向测量。
在步骤S1中，所述加工工件为硬性基板时，在步骤S4之前进行所述硬性基板的曝光位对准测量。在步骤S1中，位于所述工件台上的加工工件为软性基板时，在步骤S4之前进行所述软性基板的曝光位对准测量和垂向测量，所述工件台为卷对卷传输结构。所述卷对卷传输结构包括左右对称放置的放卷棍和收卷棍，用于吸附软性基板的吸附平台。所述吸附平台包括测量区域与曝光区域。
【实施例六】
本发明提供一种曝光方法，采用实施例二所述的曝光装置。
请参考图11，其为本发明实施例六所提供的曝光方法的流程图。如图11所示，本发明提供的曝光方法包括：
步骤S1：将加工工件20放置到工件台50上；
步骤S2：测量系统40测量工件对准标记21，得到待曝光图形的位置；
步骤S3：调整工件台50姿态，以实现曝光图形的曝光姿态要求；
步骤S4：运动台30将曝光系统10运动到曝光工位；
步骤S5：曝光系统10对曝光图形进行曝光；
步骤S6：调整工件台50姿态，以实现下一曝光图形的曝光姿态要求；
步骤S7：曝光系统10对下一曝光图形进行曝光；
步骤S8：曝光系统10运动到下一曝光工位；
步骤S9：重复上述步骤S3～S8，直至整个加工工件20上的曝光图形曝光完毕。
其中，若扫描视场范围能够完全覆盖加工工件20大小，则可省略步骤S8。
【实施例七】
本发明提供一种曝光方法，采用实施例三所述的曝光装置。
请参考图12，其为本发明实施例六所提供的曝光方法的流程图。如图12所示，本发明提供的曝光方法包括：
步骤S1：柔性导电膜20的一端卷绕在放卷棍51上，另一端卷绕在收卷棍52上，位于放卷棍51和收卷棍52之间的柔性导电膜20展平吸附在吸附平台53上。
步骤S2：测量系统40运动到掩膜版70上方，测量掩膜对准标记71和工件对准标记22和曝光图形线条位置，得到待曝光图形的位置；
步骤S3：调整掩膜台80姿态，以实现曝光图形的曝光姿态要求；
步骤S4：运动台30将曝光系统10运动到曝光工位；
步骤S5：曝光系统10对曝光图形进行曝光，测量系统40测量下一曝光图形位置；
步骤S6：调整掩膜台80姿态，以实现下一曝光图形的曝光姿态要求；
步骤S7：曝光系统10对下一曝光图形进行曝光；
步骤S8：曝光系统10运动到下一曝光工位；
步骤S9：重复上述步骤S2～S8，直至当前曝光部分的所有曝光工位全部曝光完毕后，通过放卷棍51和收卷棍52使柔性导电膜20的下一待曝光部分移动至吸附平台53上；
步骤S10：重复上述步骤S2～S9，直至一卷柔性导电膜20的曝光图形曝光完毕。
其中，若扫描视场范围能够完全覆盖吸附于吸附平台53上的柔性导电膜20，则可省略步骤S8。
由于实施例四与实施例三的区别仅在于所述吸附平台包括测量区域53与曝光区域54，因此其采用实施例四所述的曝光装置进行曝光的方法与采用实施例三所述的曝光装置进行曝光的方法区别仅在于，在曝光系统10对曝光区域54的图形进行曝光的同时，测量系统40在测量区域53对下一待曝光柔性导电膜20进行水平向位置和垂向位置测量，从而有效的提高了曝光产率。因此，对于 详细的方法步骤不再赘述。
综上所述，本发明所提供的曝光系统、曝光装置及曝光方法，通过在曝光系统中设置光斑切换单元，使得激光束在不同光路之间进行切换，从而对光斑的尺寸范围进行切换，满足了不同线宽工件对光斑尺寸的不同要求，提高了对不同工件的加工适应性，有效的节约了成本；通过在卷对卷传输结构中设置包括测量区域与曝光区域在内的吸附平台，在测量区域由测量系统对软性基板测量位置，然后再传输软性基板至曝光区域，由曝光系统在曝光区域进行曝光，此时测量系统可在测量区域对下一待曝光软性基板进行水平向位置和垂向位置测量，从而有效的提高了曝光产率。
上述描述仅是对本发明较佳实施例的描述，并非对本发明范围的任何限定，本发明领域的普通技术人员根据上述揭示内容做的任何变更、修饰，均属于权利要求书的保护范围。

Claims (25)

  1. 一种曝光系统，其特征在于，包括：激光单元、光斑切换单元以及透镜单元；所述激光单元发射激光束；所述光斑切换单元，根据待曝光的加工工件所需的光斑尺寸，使所述激光束沿多个不同光路中的一个光路传输，以获得所需光斑尺寸的激光束；所述透镜单元用于改变所述激光束入射至加工工件的方向。
  2. 如权利要求1所述的曝光系统，其特征在于，所述曝光系统是根据所述加工工件要求聚焦到所述加工工件表面的光斑功率密度高低，确定所述加工工件所需的光斑尺寸，通过将所述光斑尺寸与光斑临界值相比后，确定所述激光束将要传输的光路，并控制所述光斑切换单元打开所述光路。
  3. 如权利要求2所述的曝光系统，其特征在于，所述光斑切换单元包括第一光路与第二光路，所述第一光路遵循衍射极限原理，产生光斑尺寸可调整且小于所述光斑临界值的第一光斑，所述第二光路遵循几何成像原理，产生光斑尺寸可调整且大于等于所述光斑临界值的第二光斑。
  4. 如权利要求3所述的曝光系统，其特征在于，所述光斑临界值为100μm。
  5. 如权利要求3所述的曝光系统，其特征在于，所述第一光路由第一反射镜、第一光阑、第二反射镜与光学元件组成，所述第二光路由聚焦镜组、第二光阑与所述光学元件组成。
  6. 如权利要求5所述的曝光系统，其特征在于，所述光斑切换单元还包括分光棱镜，所述分光棱镜将所述激光束分为第一光束与第二光束，所述第一光束经过所述第一光路，所述第二光束经过所述第二光路；通过所述第一光阑与第二光阑的关闭与打开来控制所述第一光路或第二光路的打开。
  7. 如权利要求1所述的曝光系统，其特征在于，所述激光单元包括输出激光束的光源组件、用于对所述激光束的光斑进行变倍扩束的扩束镜组以及对所述光斑形貌进行整形的整形组件。
  8. 如权利要求1所述的曝光系统，其特征在于，所述透镜单元包括二维扫描振镜与远心场镜，所述二维扫描振镜对所述激光束进行X向或Y向偏转，所述远心场镜保证所述激光束垂直入射至加工工件上。
  9. 一种曝光装置，包括曝光系统、工件台与测量系统，其特征在于，所述曝光系统为权利要求1～8中任一项所述的曝光系统。
  10. 如权利要求9所述的曝光装置，其特征在于，位于所述工件台上的加工工件为硬性基板，所述测量系统用于实现所述硬性基板与所述曝光系统的对准。
  11. 如权利要求9所述的曝光装置，其特征在于，位于所述工件台上的加工工件为软性基板，所述工件台为卷对卷传输结构。
  12. 如权利要求11所述的曝光装置，其特征在于，所述卷对卷传输结构包括左右对称放置的放卷棍和收卷棍，以及用于吸附所述软性基板的吸附平台。
  13. 如权利要求12所述的曝光装置，其特征在于，所述吸附平台包括测量区域与曝光区域。
  14. 如权利要求11～13中任一项所述的曝光装置，其特征在于，所述测量系统包括用于测量水平向位置的对准传感器，测量垂向位置的垂向传感器以及可进行多自由度运动的运动机构。
  15. 如权利要求14所述的曝光装置，其特征在于，所述曝光装置还包括掩膜版与掩膜台，所述掩膜版用于复制产生相同的曝光图形，所述掩膜台用于承载和携带所述掩膜版进行多自由度运动。
  16. 一种曝光方法，其特征在于，采用权利要求10所述的曝光装置进行曝光。
  17. 一种曝光方法，其特征在于，采用权利要求11～15中任一项所述的曝光装置进行曝光。
  18. 一种曝光方法，其特征在于，包括：
    步骤1，在工件台上设置加工工件，所述加工工件对应一所需的光斑尺寸，所述光斑尺寸是根据要求聚焦到所述加工工件表面的光斑功率密度高低来确定；
    步骤2，将上述光斑尺寸与光斑临界值相比，获得比较结果；
    步骤3，根据所述比较结果，控制光斑切换单元，打开多个不同的光路中的一个作为选定曝光光路；
    步骤4，通过激光单元发射激光束，通过上述曝光光路之后，将掩膜图案曝 光到所述加工工件上。
  19. 如权利要求18所述的曝光方法，其特征在于，在步骤3中，所述光斑切换单元包括第一光路与第二光路，所述第一光路遵循衍射极限原理，产生光斑尺寸可调整且小于所述光斑临界值的第一光斑，所述第二光路遵循几何成像原理，产生光斑尺寸可调整且大于等于所述光斑临界值的第二光斑。
  20. 如权利要求18或19所述的曝光方法，其特征在于，所述光斑临界值为100μm。
  21. 如权利要求19所述的曝光方法，其特征在于，在步骤4之前，还包括测量步骤，用于对所述加工工件，进行对准测量和/或垂向测量。
  22. 如权利要求21所述的曝光方法，其特征在于，在步骤1中，所述加工工件为硬性基板，在步骤4之前进行所述硬性基板的曝光位对准测量。
  23. 如权利要求21所述的曝光方法，其特征在于，在步骤1中，位于所述工件台上的加工工件为软性基板，在步骤4之前进行所述软性基板的曝光位对准测量和垂向测量，所述工件台为卷对卷传输结构。
  24. 如权利要求23所述的曝光方法，其特征在于，所述卷对卷传输结构包括左右对称放置的放卷棍和收卷棍，以及用于吸附软性基板的吸附平台。
  25. 如权利要求24所述的曝光方法，其特征在于，所述吸附平台包括测量区域与曝光区域。
PCT/CN2017/073957 2016-02-18 2017-02-17 曝光系统、曝光装置及曝光方法 WO2017140265A1 (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020187026283A KR102143085B1 (ko) 2016-02-18 2017-02-17 노광 시스템, 노광 장치 및 노광 방법
JP2018543394A JP6704462B2 (ja) 2016-02-18 2017-02-17 露光システム、露光装置及び露光方法
SG11201806983VA SG11201806983VA (en) 2016-02-18 2017-02-17 Exposure system, exposure device and exposure method
US15/999,783 US10942458B2 (en) 2016-02-18 2017-02-17 Exposure system, exposure device and exposure method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610092322.2A CN107092166B (zh) 2016-02-18 2016-02-18 曝光系统、曝光装置及曝光方法
CN201610092322.2 2016-02-18

Publications (1)

Publication Number Publication Date
WO2017140265A1 true WO2017140265A1 (zh) 2017-08-24

Family

ID=59625618

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/073957 WO2017140265A1 (zh) 2016-02-18 2017-02-17 曝光系统、曝光装置及曝光方法

Country Status (7)

Country Link
US (1) US10942458B2 (zh)
JP (1) JP6704462B2 (zh)
KR (1) KR102143085B1 (zh)
CN (1) CN107092166B (zh)
SG (1) SG11201806983VA (zh)
TW (1) TWI629573B (zh)
WO (1) WO2017140265A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107678244A (zh) * 2017-09-26 2018-02-09 深圳清溢光电股份有限公司 一种半透膜掩模版lcvd修补系统
CN108681214B (zh) * 2018-05-21 2019-08-13 中国科学院上海光学精密机械研究所 通过改变扩束比例实现跨尺度光刻或多分辨率成像的方法
KR102100361B1 (ko) * 2018-08-22 2020-04-13 주식회사 코윈디에스티 금속 마스크 생산 장치
KR102421290B1 (ko) * 2019-09-27 2022-07-15 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 정렬 마크를 형성하기 위한 장치 및 방법
US11270950B2 (en) * 2019-09-27 2022-03-08 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for forming alignment marks
TWI702991B (zh) * 2019-12-12 2020-09-01 搏盟科技股份有限公司 應用於農畜牧產品之雷射清潔設備
KR102468802B1 (ko) * 2020-05-04 2022-11-18 한국기계연구원 광학식 리소그래피 장치 및 방법
CN114985913A (zh) * 2022-06-10 2022-09-02 北京工业大学 一种异种金属激光点焊的光束整形装置及激光焊接设备
CN115351301B (zh) * 2022-08-18 2023-09-29 湖南华曙高科技股份有限公司 一种增材制造设备的光路系统及光路调节方法
CN115119409B (zh) * 2022-08-29 2022-11-11 苏州东山精密制造股份有限公司 精细柔性线路板及其制作方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010028443A1 (en) * 2000-03-30 2001-10-11 Shuichi Yabu Exposure apparatus, gas replacing method, and method of manufacturing a semiconductor device
CN1675020A (zh) * 2002-08-09 2005-09-28 Tdk株式会社 激光加工设备、加工方法及利用其制造电路板的方法
CN101364053A (zh) * 2008-09-19 2009-02-11 清溢精密光电（深圳）有限公司 一种光刻机曝光系统及其控制方法
CN101487978A (zh) * 2008-01-18 2009-07-22 中芯国际集成电路制造(上海)有限公司 曝光装置及曝光方法
CN102520525A (zh) * 2011-11-14 2012-06-27 镭射谷科技(深圳)有限公司 光束变换装置及使用该装置的激光加工设备
CN102837125A (zh) * 2011-11-11 2012-12-26 中国科学院光电研究院 激光加工装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60123160A (ja) * 1983-12-06 1985-07-01 Dainippon Screen Mfg Co Ltd 走査ビーム径切換装置
US5652645A (en) * 1995-07-24 1997-07-29 Anvik Corporation High-throughput, high-resolution, projection patterning system for large, flexible, roll-fed, electronic-module substrates
JP3969855B2 (ja) * 1998-07-02 2007-09-05 キヤノン株式会社 露光方法および露光装置
TW482705B (en) * 1999-05-28 2002-04-11 Electro Scient Ind Inc Beam shaping and projection imaging with solid state UV Gaussian beam to form blind vias
JP2001203141A (ja) * 2000-01-20 2001-07-27 Nikon Corp 露光装置及び光源装置
JP2001269793A (ja) * 2000-03-27 2001-10-02 Ricoh Microelectronics Co Ltd レーザ加工方法
JP2006098726A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd アライメント部の校正方法と、アライメント校正可能な描画装置と、搬送装置
US8023103B2 (en) * 2006-03-03 2011-09-20 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP4541394B2 (ja) * 2007-10-31 2010-09-08 パナソニック株式会社 金属ローラの製造方法
EP2239084A1 (en) * 2009-04-07 2010-10-13 Excico France Method of and apparatus for irradiating a semiconductor material surface by laser energy
JP2011169924A (ja) * 2010-01-22 2011-09-01 Nsk Ltd 露光装置及び露光方法
KR20120129759A (ko) * 2011-05-19 2012-11-28 가부시기가이샤 디스코 레이저 가공 방법 및 레이저 가공 장치
JP2013154378A (ja) * 2012-01-31 2013-08-15 Sumitomo Heavy Ind Ltd レーザ加工装置及びレーザ加工方法
CN103293864B (zh) * 2012-02-27 2015-05-13 上海微电子装备有限公司 一种光刻曝光剂量的控制装置及控制方法
JP2013226588A (ja) * 2012-04-26 2013-11-07 Olympus Corp リペア装置及びリペア方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010028443A1 (en) * 2000-03-30 2001-10-11 Shuichi Yabu Exposure apparatus, gas replacing method, and method of manufacturing a semiconductor device
CN1675020A (zh) * 2002-08-09 2005-09-28 Tdk株式会社 激光加工设备、加工方法及利用其制造电路板的方法
CN101487978A (zh) * 2008-01-18 2009-07-22 中芯国际集成电路制造(上海)有限公司 曝光装置及曝光方法
CN101364053A (zh) * 2008-09-19 2009-02-11 清溢精密光电（深圳）有限公司 一种光刻机曝光系统及其控制方法
CN102837125A (zh) * 2011-11-11 2012-12-26 中国科学院光电研究院 激光加工装置
CN102520525A (zh) * 2011-11-14 2012-06-27 镭射谷科技(深圳)有限公司 光束变换装置及使用该装置的激光加工设备

Also Published As

Publication number Publication date
KR102143085B1 (ko) 2020-08-10
JP2019505850A (ja) 2019-02-28
SG11201806983VA (en) 2018-09-27
KR20180114918A (ko) 2018-10-19
CN107092166B (zh) 2019-01-29
TWI629573B (zh) 2018-07-11
JP6704462B2 (ja) 2020-06-03
CN107092166A (zh) 2017-08-25
TW201740212A (zh) 2017-11-16
US10942458B2 (en) 2021-03-09
US20190163074A1 (en) 2019-05-30

Similar Documents

Publication Publication Date Title
WO2017140265A1 (zh) 曝光系统、曝光装置及曝光方法
CN105789007B (zh) 带电粒子束系统和方法
US7388679B2 (en) Pattern light irradiation device, three dimensional shape measuring device, and method pattern light irradiation
KR100898848B1 (ko) 다중 노출 광선 리소그래피 툴 방법
JPH0254103A (ja) 露光装置の位置合わせ装置及び方法
JPS61116360A (ja) レ−ザ光線リトグラフ
CN106814546A (zh) 焦面检测装置、焦面标定方法与硅片曝光方法
TWI448841B (zh) 照明系統、微影裝置及方法
CN109822223B (zh) 一种大幅面激光标记方法及设备
WO2017167258A1 (zh) 一种投影曝光装置及方法
TWI707208B (zh) 微影裝置及使用該微影裝置而在基板上曝光一曝光區之方法
JP2023027281A (ja) リソグラフィ装置およびリソグラフィ装置の制御方法
JPH1145842A (ja) 投影露光装置と露光方法、該露光装置の調整方法、及び回路デバイス製造方法
JP2013243314A (ja) 露光装置及びデバイス製造方法
KR102150972B1 (ko) 전자 빔 노광 시스템
KR102193312B1 (ko) 스테이지 제어에서의 사용을 위한 광학 시스템
JPH0290119A (ja) レーザ描画機の集光光学装置
JP2014220264A (ja) リソグラフィ装置、リソグラフィ方法、および物品の製造方法
KR20150142607A (ko) 리소그래피 장치 및 제품을 제조하는 방법
JP2016027600A (ja) 低エネルギー電子ビームリソグラフィ
CN110780539A (zh) 微影投影设备
JP2015146342A (ja) リソグラフィ装置、及び物品の製造方法
JP2006119210A (ja) 焦点位置調整装置、レーザ照射装置及び光照射方法。
US20200326633A1 (en) Dense line extreme ultraviolet lithography system with distortion matching
JPH02218110A (ja) 光学結像装置及び方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17752697

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2018543394

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 11201806983V

Country of ref document: SG

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 1020187026283

Country of ref document: KR

122 Ep: pct application non-entry in european phase

Ref document number: 17752697

Country of ref document: EP

Kind code of ref document: A1