WO2017088243A1 - 感测电路与相应的oled显示设备 - Google Patents

感测电路与相应的oled显示设备 Download PDF

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Publication number
WO2017088243A1
WO2017088243A1 PCT/CN2015/099243 CN2015099243W WO2017088243A1 WO 2017088243 A1 WO2017088243 A1 WO 2017088243A1 CN 2015099243 W CN2015099243 W CN 2015099243W WO 2017088243 A1 WO2017088243 A1 WO 2017088243A1
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Prior art keywords
amplifier
voltage
sensing
thin film
film transistor
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PCT/CN2015/099243
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English (en)
French (fr)
Inventor
黄泰钧
梁鹏飞
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/905,886 priority Critical patent/US10204550B2/en
Publication of WO2017088243A1 publication Critical patent/WO2017088243A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3258—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0233—Improving the luminance or brightness uniformity across the screen
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/04—Maintaining the quality of display appearance
    • G09G2320/043—Preventing or counteracting the effects of ageing
    • G09G2320/045—Compensation of drifts in the characteristics of light emitting or modulating elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/12—Test circuits or failure detection circuits included in a display system, as permanent part thereof

Definitions

  • the invention relates to a sensing circuit for sensing a small current and voltage of a device to be sensed, in particular for an organic light emitting diode (Organic) Light-Emitting Diode, OLED) display sensing circuit.
  • Organic light emitting diode Organic Light-Emitting Diode, OLED
  • the OLED display technology is different from the traditional LCD display method.
  • the OLED does not use a backlight, but uses a very thin organic material coating and a glass substrate to pass an electric current to cause the organic material to emit light.
  • OLED display screens are generally thinner, have a larger viewing angle, and are more energy efficient.
  • FIG. 1 is a schematic diagram of a pixel circuit of a conventional OLED panel, the pixel circuit including a data line for inputting data; a first thin film transistor and a second thin film transistor, a gate of the second thin film transistor is connected to a drain of the first thin film transistor; a second capacitor connected to the gate of the second thin film transistor and a drain; an organic light emitting diode connected to the second thin film transistor a third capacitor; connected to the two ends of the organic light emitting diode; wherein a gate of the first thin film transistor has a scan signal input.
  • FIG. 2 is a block diagram of a conventional sensing circuit, and the icons include a pixel circuit 100, a sensing system 110, a source driver 102, a controller 103, a memory 104, a sensing input 105, and a scan input 106.
  • the Vth_TFT shift of the turn-on voltage of the thin film transistor occurs, and the Vth_oled shift occurs in the OLED, resulting in uneven display quality.
  • the existing circuit practice is as shown in FIG. 2, and the second thin film transistor T2 in each pixel circuit is transmitted through the sensing line. And the characteristics of the OLED are sensed, and the offset Vth is compensated back through the external controller, so that the picture is uniformly displayed.
  • the invention relates to a sensing circuit for sensing a small current and a voltage of a device to be sensed, and a corresponding OLED display device, wherein the sensing circuit is in a sensing mode of the current, Supports dual sensing to remove the effects of noise and leakage current.
  • the OLED display device includes: a pixel circuit, the pixel circuit includes: a data line for inputting data; a first thin film transistor; a second thin film transistor, the second film a gate of the transistor is connected to the drain of the first thin film transistor; a third thin film transistor, a source of the third thin film transistor is connected to a drain of the second thin film transistor; a second capacitor Connected to the gate of the second thin film transistor and a drain; an organic light emitting diode connected to the drain of the second thin film transistor; a third capacitor; connected to the organic light emitting diode Both ends.
  • the sensing circuit for sensing a small current and voltage of a device to be sensed includes: an amplifier having a first input terminal, a second input terminal and an output terminal; and a first capacitor connected Between the first input end and the output end of the amplifier; a first switch that is connected in parallel with the first capacitor; and a second switch that is connected to the first of the amplifier The input end is connected to the device to be sensed; a third switch is connected between the second input end of the amplifier and the device to be sensed; and a fourth switch is connected to the amplifier a second input terminal and a fixed voltage source; a correlated two sampling circuit (CDS) coupled to the output of the amplifier; and an analog to digital converter (ADC) coupled to the associated two samples Circuit.
  • CDS correlated two sampling circuit
  • ADC analog to digital converter
  • the correlated two sampling circuit is configured to latch a value of the voltage output, and a logic operation to generate a voltage processing value.
  • the analog to digital converter is configured to digitally quantize and output the voltage processing value generated by the correlated two sampling circuits.
  • the amplifier when the second and fourth switches are turned on and the third switch is turned off, the amplifier is used as an integrator.
  • the integrator integrates a current and clamps the potential of the second thin film transistor through an input voltage of the second input terminal to generate a voltage output to the associated two sampling circuits.
  • the amplifier is used as a buffer when the first and third switches are turned on and the second switch is turned off.
  • the buffer is configured to perform potential clamping on the second thin film transistor through an input voltage of the second input terminal to generate a voltage output to the correlated two sampling circuit.
  • the invention obtains the results obtained by current sensing and voltage sensing, and the method for calculating the compensation amount is different, and supports two modes at the same time, corresponding to different states, and can perform corresponding different processing. Due to the different process, the parameters of the voltage sensing and the parameters of the current sensing reflect the characteristics of the thin film transistor and the OLED.
  • the circuit of the invention supports two modes at the same time, and can be adjusted accordingly.
  • the sensing circuit supports dual sensing in the sensed mode of current, removing the effects of noise and leakage current.
  • FIG. 1 is a schematic diagram of a pixel circuit of the prior art
  • FIG. 2 is a block diagram of a sensing circuit of the prior art
  • FIG. 3 is a schematic diagram of a sensing circuit in accordance with an embodiment of the present invention.
  • FIG. 4 is a schematic diagram of a sensing circuit in a first mode in accordance with the embodiment of the present invention.
  • Figure 5 is a schematic illustration of a sensing circuit in a second mode in accordance with the described embodiment of the present invention.
  • 6a-6b are schematic views of a pixel circuit to which the embodiment of the present invention is applied;
  • Figure 7 is a schematic illustration of a sensing circuit in a third mode in accordance with the described embodiment of the present invention.
  • Figure 8 is a schematic illustration of a sensing circuit in a fourth mode in accordance with the described embodiment of the present invention.
  • the sensing circuit 10 includes a a pixel circuit 100, the pixel circuit 100 includes: a data line L_data for inputting data; a first thin film transistor T1; a second thin film transistor T2, the second A gate of the thin film transistor T2 is connected to the drain of the first thin film transistor; a third thin film transistor T3, a source of the third thin film transistor T3 is connected to the second thin film a drain of the transistor; a second capacitor C1 connected to the gate of the second thin film transistor T2 and a drain; an organic light emitting diode D connected to the second thin film transistor T2 The drain electrode; a third capacitor C2; connected to the two ends of the organic light emitting diode D; and a sensing line L_sense connected to the third thin film transistor T3 a drain electrode; wherein a gate of the first thin film transistor T1 has a scan signal input SCN, and a gate
  • the sensing circuit of the present invention for simultaneously supporting small currents and voltages is different from the prior art in that it comprises: a sensing circuit 101 Connected to the pixel circuit 100 through the sensing line L_sense, the sensing circuit 101 includes: an amplifier 1010 having a first input terminal I 1 And a second input terminal I 2 and an output terminal 3; a first capacitor C3 connected to the first input terminal I 1 of the amplifier 1010 and the output terminal 3; a first switch S1, connected to the two ends of the first capacitor C3; a second switch S2, at the first input terminal I 1 and the first capacitor C3 of the amplifier 1010 And the first switch S1 is connected; a third switch S3 is connected to the second input terminal I 2 and the second switch S2 of the amplifier 1010; and a fourth switch S4 a second input terminal I 2 connected to the amplifier 1010 and the third switch S3; a correlated sampling circuit 1011 connected to the output terminal of the amplifier 1010 And an analog to digital converter 1012 coupled to the associated two sampling circuit 1011.
  • the amplifier 1010 may be in the form of an integrator, which may integrate a current I flowing through the second thin film transistor T2 and the organic light emitting diode D, and then pass through the analog to digital converter 1012. Sampling is performed to obtain characteristic parameters of the second thin film transistor T2 and the organic light emitting diode D.
  • the amplifier 1010 is in the form of a buffer, and the voltage of the second thin film transistor T2 is sampled by the analog to digital converter 1012 to obtain the second thin film transistor. Characteristic parameters of T2 and organic light-emitting diode D.
  • FIG. 4 is a schematic diagram of a sensing circuit in a first mode according to the embodiment of the present invention, for sensing flow through the second Thin film transistor T2 current.
  • the amplifier 1010 is in the form of an integrator, and the integrator can be initialized through the conduction of the first switch S1, S1.
  • the integration is started; and the first thin film transistor T1 and the second thin film transistor T2 are turned on, and the organic light emitting diode has no current, and is marked by 'X'; wherein the data line L_data outputs a Vdata voltage to turn on the second thin film transistor T2, and at this time, the fixed voltage source VCM is smaller than the Vdata value, so the organic light emitting diode D It is off.
  • the integrated voltage is stored in the correlated two sampling circuit 1011, and the analog to digital converter 1012 pairs the second thin film transistor T2.
  • the voltage is sampled and the sampled voltage is ⁇ V , which is obtained by the following equation:
  • ⁇ t is the integration time and I is the current through the second transistor.
  • FIG. 5 is a schematic diagram of a sensing circuit in a second mode according to the embodiment of the present invention.
  • the amplifier 1010 is in the form of an integrator, and the integrator can be initialized through the conduction of the first switch S1, S1.
  • ⁇ t is the integration time and I is the current through the organic light-emitting diode D.
  • FIGS. 6a-6b is a schematic diagram of a pixel circuit according to the embodiment of the present invention is applied, for eliminating noise (Noise) and the drain current I noise (leakage) current I lrakage.
  • the amplifier 1010 is in the form of an integrator, and the integrator can be initialized by the conduction of the first switch S1.
  • the current will be obtained, here I current +I noise +I lrakage , the organic light emitting diode has no current, so it is marked by 'X', and I current is the current I in Fig.
  • the correlated two sampling circuit 1011 further turns off the third thin film transistor T3 through the sensing signal input SEN (the third thin film transistor T3 is marked by 'X') to obtain I noise + I lrakage . And stored in the related two sampling circuit 1011, through the two storage results, the I current value can be obtained, which is equivalent to eliminating the noise current I noise and the leakage current I lrakage .
  • FIG. 7 is a schematic diagram of a sensing pixel circuit in a third mode in accordance with the embodiment of the present invention.
  • the amplifier 1010 is in the form of a buffer; and the first thin film transistor T1 and the third thin film transistor T3 Corresponding to the input of the scan signal input SCN and the sense signal input SEN, the organic light emitting diode has no current, so it is marked by 'X'; wherein the data line L_data outputs one
  • the Vdata voltage causes the second thin film transistor T2 to be turned on, since the value of Vdata is small, and the voltage value of the fixed voltage source VCM is less than (Vdata-Vth_TFT), Vth_TFT is the turn-on voltage offset of the thin film transistor, so the organic light emitting diode D is turned off.
  • the fourth switch S4 is turned off due to the loss of a fixed voltage source VCM
  • the voltage clamp is applied, and the source voltage of the second thin film transistor T2 will change.
  • the analog to digital converter 1012 directly faces the second thin film transistor T2 after a stable period of time The source voltage is sampled to obtain the characteristic parameters of the second thin film transistor T2.
  • FIG. 8 is a schematic diagram of a sensing pixel circuit in a fourth mode in accordance with the embodiment of the present invention.
  • the amplifier 1010 is in the form of a buffer; and the first thin film transistor T1 and the third thin film transistor T3 Corresponding to the input scan signal input SCN and the sense signal input SEN are both turned on; wherein the data line L_data outputs a Vdata voltage such that the second thin film transistor T2 Turning off, the second thin film transistor T2 is thus marked by 'X', since the voltage value of the fixed voltage source VCM is greater than Vdata and greater than Vth_OLED, Vth_OLED The voltage of the organic light emitting diode D is shifted, so the organic light emitting diode D is in an on state.
  • the fourth switch S4 is turned off due to the loss of a fixed voltage source VCM
  • the voltage clamp is applied, and the source voltage of the second thin film transistor T2 will change.
  • the analog to digital converter 1012 directly faces the second thin film transistor T2 after a stable period of time
  • the source voltage is sampled to obtain the characteristic parameters of the organic light emitting diode D.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
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Abstract

一种感测电路（101），用于感测一待感测装置的微小电流与电压，其中所述感测电路（101）透过感测线（L_SENSE）连接于像素电路（100），所述感测电路（101）包含：一放大器（1010）、一第一电容（C3）、一第一切换开关（S1）、一第二切换开关（S2）、一第三切换开关（S3）、一第四切换开关（S4）、一相关两次取样电路（1011）、以及一模拟数字转换器（1012）。

Description

感测电路与相应的OLED显示设备 技术领域
本发明涉及一种感测电路，用于感测一待感测装置的微小电流与电压，尤其是适用于有机发光二极管(Organic Light-Emitting Diode, OLED)显示器的感测电路。
 背景技术
OLED显示技术与传统的LCD显示方式不同，OLED无使用背光灯，而是用非常薄的有机材料涂层和玻璃基板，透过电流通过，使有机材料发光。OLED显示屏幕通常更轻薄，拥有更大可视角度，并且较节省电能。
图1为现有OLED面板的像素电路示意图，所述像素电路包含一数据线，用于输入数据；一第一薄膜晶体管和一第二薄膜晶体管，所述第二薄膜晶体管的一栅极连接于所述第一薄膜晶体管的一汲极；一第二电容，连接于所述第二薄膜晶体管的所述栅极与一汲极；一有机发光二极管，连接于所述第二薄膜晶体管的所述汲极；一第三电容；连接于所述有机发光二极管两端；其中，在所述第一薄膜晶体管的一栅极有一扫描信号输入。
图2为现有感测电路方块图，图标有像素电路100、感测系统110、源驱动器102、控制器103、内存104、感测输入105、扫描输入106。
由于薄膜晶体管与OLED面板的老化，造成了薄膜晶体管的开启电压发生Vth_TFT偏移，以及在OLED发生Vth_oled的偏移，导致显示画质不均匀。
为了解决上述所说的显示不均匀问题，现有的电路做法如图2所示，透过感测线将每个像素电路中的第二薄膜晶体管T2 以及OLED的特性感测出来，再透过外部的控制器将偏移的Vth补偿回去，使画面得到均匀的显示效果。
 技术问题
本发明涉及一种感测电路与相应的OLED显示设备，所述感测电路是用于感测一待感测装置的微小电流与电压，所述感测电路在电流的感测的模式下，支持双重感测，去掉噪声和漏电流的影响。
技术解决方案
依据本发明一实施例，所述OLED显示设备包含：一像素电路，所述像素电路包含：一数据线，用于输入数据；一第一薄膜晶体管；一第二薄膜晶体管，所述第二薄膜晶体管的一栅极连接于所述第一薄膜晶体管的汲极；一第三薄膜晶体管，所述第三薄膜晶体管的一源极连接于所述第二薄膜晶体管的一汲极；一第二电容，连接于所述第二薄膜晶体管的所述栅极与一汲极；一有机发光二极管，连接于所述第二薄膜晶体管的所述汲极；一第三电容；连接于所述有机发光二极管两端。
本发明的用于感测一待感测装置的微小电流与电压的感测电路包含：一放大器，具有一第一输入端与、一第二输入端与一输出端；一第一电容，连接于所述放大器的所述第一输入端与所述输出端之间；一第一切换开关，与所述第一电容并联连接；一第二切换开关，连接于所述放大器的所述第一输入端与所述待感测装置之间；一第三切换开关，连接于所述放大器的第二输入端与所述待感测装置之间；一第四切换开关，连接于所述放大器的第二输入端与一固定电压源之间；一相关两次取样电路(CDS)，连接所述放大器的所述输出端；以及一模拟数字转换器(ADC)，连接于所述相关两次取样电路。
所述相关两次取样电路用于对所述电压输出的值进行锁存，以及逻辑运算，产生一电压处理值。
所述模拟数字转换器用于对所述相关两次取样电路所产生的所述电压处理值进行数字量化，并输出。
依据本发明一实施例，当所述第二与第四开关导通，第三开关关断时，所述放大器会被当作一积分器使用。所述积分器对一电流进行积分，并通过所述第二输入端的一输入电压对所述第二薄膜晶体管进行电位嵌位，产生一电压输出给所述相关两次取样电路。
依据本发明另一实施例，当所述第一与第三开关导通，第二开关关断时，所述放大器会被当作一缓冲器使用。所述缓冲器用于通过所述第二输入端的一输入电压对所述第二薄膜晶体管进行电位嵌位，产生一电压输出给所述相关两次取样电路。
本发明在电流感测与电压感测所得到结果，对计算补偿量方式会不一样，同时支持两种方式，对应不同的状态，可做相应不同的处理。由于制程的不同，电压感测的参数与电流感测的参数在反映薄膜晶体管与OLED的特征会有所不同。本发明电路同时支持两种方式，可做相应的调整。
 有益效果
所述感测电路在电流的感测的模式下，支持双重感测，去掉噪声和漏电流的影响。
 附图说明
图1是习知技术的像素电路的示意图；
图2是习知技术的感测电路方块图；
图3是依据本发明一实施例的感测电路的示意图；
图4是依据本发明的所述实施例的第一模式下的感测电路的示意图；
图5是依据本发明的所述实施例的第二模式下的感测电路的示意图；
图6a-6b是应用本发明的所述实施例的像素电路的示意图；
图7是依据本发明的所述实施例的第三模式下的感测电路的示意图；
图8是依据本发明的所述实施例的第四模式下的感测电路的示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。
参照图 3 ，图 3 是依据本发明一实施例的感测电路 10 的 示意图 。所述感测电路 10 包含一 像素电路 100 ，所述 像素电路 100 包含：一数据线 L_data ，用于输入数据；一第一 薄膜 晶体管 T1 ；一第二 薄膜 晶体管 T2 ，所述第二 薄膜 晶体管 T2 的一栅极连接于所述第一 薄膜 晶体管的汲极；一第三 薄膜 晶体管 T3 ，所述第三 薄膜 晶体管 T3 的一源极连接于所述第二 薄膜 晶体管的一汲极；一 第二电容 C1 ，连接于所述第二 薄膜 晶体管 T2 的所述栅极与一汲极；一有机发光二极管 D ，连接于所述第二 薄膜 晶体管 T2 的所述汲极；一 第三电容 C2 ；连接于所述有机发光二极管 D 两端；以及一感测线 L_sense ，连接于所述第三 薄膜 晶体管 T3 的一汲极；其中，在所述第一 薄膜 晶体管 T1 的一栅极有一扫描信号输入 SCN ，而在所述第三 薄膜 晶体管 T3 的一栅极有一感测信号输入 SEN 。
本发明的 用于同时支持 微小电流与电压的感测电路不同于习知技术的特征在于，包含：一感测 电路 101 ，透过所述感测线 L_sense 连接于所述 像素电路 100 ，所述感测 电路 101 包含：一 放大器 1010 ，具有一第一输入端 I 1 与、一第二输入端 I 2 与一输出端 3 ；一 第一电容 C3 ，连接于所述 放大器 1010 的所述第一输入端 I 1 与所述输出端 3 ；一第一切换开关 S1 ，连接于所述 第一电容 C3 两端；一第二切换开关 S2 ，在所述 放大器 1010 的所述第一输入端 I 1 与所述 第一电容 C3 以及所述第一切换开关 S1 连接；一第三切换开关 S3 ，连接于所述 放大器 1010 的第二输入端 I 2 与所述第二开关 S2 ；一第四切换开关 S4 ，连接于所述 放大器 1010 的第二输入端 I 2 与所述第三开关 S3 ；一 相关两次取样电路 1011 ，连接所述 放大器 1010 的所述输出端 3 ；以及一 模拟数字转换器 1012 ，连接于所述 相关两次取样电路 1011 。
其中，当所述第四开关 S4 导通 ，第二开关 S2 导通 ，第三开关 S3 关断 时，所述 放大器 1010 会是积分器形式，可以对流过所述第二 薄膜 晶体管 T2 和 有机发光二极管 D 的一电流 I 进行积分，再透过所述 模拟数字转换器 1012 进行采样，获得所述第二 薄膜 晶体管 T2 与 有机发光二极管 D 的特征参数。当所述第二开关 S2 关断 ，第三开关 S3 短接，第一开关 S1 短接时，所述 放大器 1010 会是缓冲器形式，透过所述 模拟数字转换器 1012 对所述第二 薄膜 晶体管 T2 的电压进行采样，获得所述第二 薄膜 晶体管 T2 与 有机发光二极管 D 的特征参数。
参照图 4 ，图 4 是依据本发明的所述实施例的第一模式下的感测电路的 示意图 ，用于感测流过所述第二 薄膜 晶体管 T2 电流。此时所述 放大器 1010 为积分器形式，透过所述第一开关 S1 的 导通 ，可让所述积分器初始化， S1 开启时则开始积分；而所述第一 薄膜 晶体管 T1 与第二 薄膜 晶体管 T2 为开启，所述有机发光二极管没电流通过，因此被 'X' 标记；其中所述数据线 L_data 输出一 Vdata 电压使得所述第二 薄膜 晶体管 T2 开启，而此时固定电压源 VCM 的比 Vdata 值小，所以所述 有机发光二极管 D 是处于关闭状态。积分后的电压会被存入所述 相关两次取样电路 1011 ，所述 模拟数字转换器 1012 对所述第二 薄膜 晶体管 T2 的电压进行采样，所采样的电压为 ⊿V ，由以下等式得到：
⊿V=⊿t*I/C3
其中 ⊿t 为积分时间， I 为通过所述第二晶体管的电流。
参照图 5 ，图 5 是依据本发明的所述实施例的第二模式下的感测电路的 示意图 ，用于感测流过所述有机发光二极管 D 电流。此时所述 放大器 1010 为积分器形式，透过所述第一开关 S1 的 导通 ，可让所述积分器初始化， S1 开启时则开始积分；而所述第一 薄膜 晶体管 T1 为开启，而第二 薄膜 晶体管 T2 为关闭，因此被 'X' 标记；其中所述数据线 L_data 输出一 Vdata 电压使得所述第二 薄膜 晶体管 T2 关闭，而此时固定电压源 VCM 的值比 Vdata 值大，所以所述有机发光二极管 D 是处于开启状态。积分后的电压会被存入所述 相关两次取样电路 1011 ，所述 模拟数字转换器 1012 对所述第二 薄膜 晶体管 T2 的电压进行采样，所采样的电压为 ⊿V ，由以下等式得到：
⊿V=⊿t*I/C3
其中 ⊿t 为积分时间， I 为通过所述有机发光二极管 D 的电流。
参照图 6a-6b ，图 6a-6b 是应用本发明的所述实施例的 像素 电路的 示意图 ，用于消除噪声 (noise) 电流 I noise 与漏 (leakage) 电流 I lrakage 。如图 4 与图 5 ，此时所述 放大器 1010 为积分器形式，透过所述第一开关 S1 的 导通 ，可让所述积分器初始化。如图 6a ，将得到的电流，此处是 I current +Inoise+Ilrakage ，所述有机发光二极管没电流通过，因此被 'X' 标记， I current 就是前述图 4 中的电流 I ，存放于所述 相关两次取样电路 1011 ，再透过所述感测信号输入 SEN 将所述第三 薄膜 晶体管 T3 关闭 ( 所述第三 薄膜 晶体管 T3 被 'X' 标记 ) ，得到 I noise +Ilrakage ，并存放于所述 相关两次取样电路 1011 ，透过两存放结果，可得到 I current 值，相当于消除了噪声电流 I noise 与漏电流 I lrakage 。
参照图 7 ，图 7 是依据本发明的所述实施例的第三模式下的感测 像素 电路的 示意图 ；用于感测所述第二 薄膜 晶体管 T2 源电压。此时所述 放大器 1010 为缓冲器形式；而所述第一 薄膜 晶体管 T1 与第三 薄膜 晶体管 T3 对应所输入的扫描信号输入 SCN 与感测信号输入 SEN 皆为开启，所述有机发光二极管没电流通过，因此被 'X' 标记；其中所述数据线 L_data 输出一 Vdata 电压使得所述第二 薄膜 晶体管 T2 开启，由于 Vdata 的值较小，同时固定电压源 VCM 的电压值小于（ Vdata-Vth_TFT ）， Vth_TFT 为 薄膜 晶体管的开启电压偏移，所以所述有机发光二极管 D 是处于关闭状态。所述第四开关 S4 是 关断 的，由于失去固定电压源 VCM 的电压嵌位，所述第二 薄膜 晶体管 T2 的源极电压将发生变化。经过一段稳定时间，所述 模拟数字转换器 1012 直接对所述第二 薄膜 晶体管 T2 的源极电压采样，获得所述第二 薄膜 晶体管 T2 的特征参数。
参照图 8 ，图 8 是依据本发明的所述实施例的第四模式下的感测 像素 电路的 示意图 ；用于感测所述有机发光二极管 D 电压。此时所述 放大器 1010 为缓冲器形式；而所述第一 薄膜 晶体管 T1 与第三 薄膜 晶体管 T3 对应所输入的扫描信号输入 SCN 与感测信号输入 SEN 皆为开启；其中所述数据线 L_data 输出一 Vdata 电压使得所述第二 薄膜 晶体管 T2 关闭，所述第二 薄膜 晶体管 T2 因此被 'X' 标记，由于固定电压源 VCM 的电压值大于 Vdata ，且大于 Vth_OLED ， Vth_OLED 为所述有机发光二极管 D 的电压偏移，所以所述有机发光二极管 D 是处于开启状态。所述第四开关 S4 是 关断 的，由于失去固定电压源 VCM 的电压嵌位，所述第二 薄膜 晶体管 T2 的源极电压将发生变化。经过一段稳定时间，所述 模拟数字转换器 1012 直接对所述第二 薄膜 晶体管 T2 的源极电压采样，获得所述有机发光二极管 D 的特征参数。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (15)

  1. 一种感测电路，用于感测一待感测装置的微小电流与电压，所述感测电路包含：
    一放大器，具有一第一输入端与、一第二输入端与一输出端；
    一第一电容，连接于所述放大器的所述第一输入端与所述输出端之间；
    一第一切换开关，与所述第一电容并联连接；
    一第二切换开关，连接于所述放大器的所述第一输入端与所述待感测装置之间；
    一第三切换开关，连接于所述放大器的第二输入端与所述待感测装置之间；
    一第四切换开关，连接于所述放大器的第二输入端与一固定电压源之间；
    一相关两次取样电路(CDS)，连接所述放大器的所述输出端；以及
    一模拟数字转换器(ADC)，连接于所述相关两次取样电路；
    其中，所述相关两次取样电路用于对所述电压输出的值进行锁存。
  2. 一种感测电路，用于感测一待感测装置的微小电流与电压，所述感测电路包含：
    一放大器，具有一第一输入端与、一第二输入端与一输出端；
    一第一电容，连接于所述放大器的所述第一输入端与所述输出端之间；
    一第一切换开关，与所述第一电容并联连接；
    一第二切换开关，连接于所述放大器的所述第一输入端与所述待感测装置之间；
    一第三切换开关，连接于所述放大器的第二输入端与所述待感测装置之间；
    一第四切换开关，连接于所述放大器的第二输入端与一固定电压源之间；
    一相关两次取样电路(CDS)，连接所述放大器的所述输出端；以及
    一模拟数字转换器(ADC)，连接于所述相关两次取样电路。
  3. 根据权利要求2所述的用于感测微小电流与电压的感测电路，其中，当所述第二与第四开关导通，第三开关关断时，所述放大器会被当作一积分器使用。
  4. 根据权利要求3所述的用于感测微小电流与电压的感测电路，其中，所述积分器对一电流进行积分，并通过所述第二输入端的一输入电压对所述第二薄膜晶体管进行电位嵌位，产生一电压输出给所述相关两次取样电路。
  5. 根据权利要求2所述的用于感测微小电流与电压的感测电路，其中，当所述第一与第三开关导通，第二开关关断时，所述放大器会被当作一缓冲器使用。
  6. 根据权利要求5所述的用于感测微小电流与电压的感测电路，其中，所述缓冲器用于通过所述第二输入端的一输入电压对所述第二薄膜晶体管进行电位嵌位，产生一电压输出给所述相关两次取样电路。
  7. 根据权利要求2所述的用于感测微小电流与电压的感测电路，其中，所述相关两次取样电路用于对所述电压输出的值进行锁存，以及逻辑运算，产生一电压处理值。
  8. 根据权利要求2所述的用于感测微小电流与电压的感测电路，其中，所述模拟数字转换器用于对所述相关两次取样电路所产生的所述电压处理值进行数字量化，并输出。
  9. 一种OLED显示设备，包含：
    一像素电路，包含：
    一数据线，用于输入数据；
    一第一薄膜晶体管和一第二薄膜晶体管，所述第二薄膜晶体管的一栅极连接于所述第一薄膜晶体管的一汲极；
    一第二电容，连接于所述第二薄膜晶体管的所述栅极与一汲极；
    一有机发光二极管，连接于所述第二薄膜晶体管的所述汲极；
    一第三电容；连接于所述有机发光二极管两端；其中，在所述第一薄膜晶体管的一栅极有一扫描信号输入；
    以及
    一感测电路，用于感测微小电流与电压，与所述像素电路连接，包含：
    一放大器，具有一第一输入端与、一第二输入端与一输出端；
    一第一电容，连接于所述放大器的所述第一输入端与所述输出端之间；
    一第一切换开关，与所述第一电容两端并联连接；
    一第二切换开关，连接于所述放大器的所述第一输入端与所述像素电路之间；
    一第三切换开关，连接于所述放大器的第二输入端与所述像素电路之间；
    一第四切换开关，连接于所述放大器的第二输入端与一固定电压源之间；
    一相关两次取样电路(CDS)，连接所述放大器的所述输出端；以及
    一模拟数字转换器(ADC)，连接于所述相关两次取样电路。
  10. 根据权利要求9所述的OLED显示设备，其中，当所述第二与第四开关导通，第三开关关断时，所述放大器会被当作一积分器使用。
  11. 根据权利要求10所述的OLED显示设备，其中，所述积分器对一电流进行积分，并通过所述第二输入端的一输入电压对所述第二薄膜晶体管进行电位嵌位，产生一电压输出给所述相关两次取样电路。
  12. 根据权利要求9所述的OLED显示设备，其中，当所述第一与第三开关导通，第二开关关断时，所述放大器会被当作一缓冲器使用。
  13. 根据权利要求12所述的OLED显示设备，其中，所述缓冲器用于通过所述第二输入端的一输入电压对所述第二薄膜晶体管进行电位嵌位，产生一电压输出给所述相关两次取样电路。
  14. 根据权利要求9所述的OLED显示设备，其中，所述相关两次取样电路用于对所述电压输出的值进行锁存，以及逻辑运算，产生一电压处理值。
  15. 根据权利要求9所述的OLED显示设备，其中，所述模拟数字转换器用于对所述相关两次取样电路所产生的所述电压处理值进行数字量化，并输出。
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