CN105280140B - 感测电路与相应的oled显示设备 - Google Patents

感测电路与相应的oled显示设备 Download PDF

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CN105280140B
CN105280140B CN201510827113.3A CN201510827113A CN105280140B CN 105280140 B CN105280140 B CN 105280140B CN 201510827113 A CN201510827113 A CN 201510827113A CN 105280140 B CN105280140 B CN 105280140B
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film transistor
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CN105280140A (zh
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黄泰钧
梁鹏飞
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/905,886 priority patent/US10204550B2/en
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    • G09G3/3258—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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Abstract

本发明提出一种感测电路，用于感测一待感测装置的微小电流与电压，包含：一像素电路与一感测电路；其中所述感测电路透过所述感测线连接于所述像素电路，所述感测电路包含：一放大器、一第一电容、一第一切换开关、一第二切换开关、一第三切换开关、一第四切换开关、一相关两次取样电路(CDS)、以及一模拟数字转换器(ADC)。

Description

感测电路与相应的OLED显示设备
【技术领域】
本发明涉及一种感测电路，用于感测一待感测装置的微小电流与电压，尤其是适用于有机发光二极管(Organic Light-Emitting Diode,OLED)显示器的感测电路。
【背景技术】
OLED显示技术与传统的LCD显示方式不同，OLED无使用背光灯，而是用非常薄的有机材料涂层和玻璃基板，透过电流通过，使有机材料发光。OLED显示屏幕通常更轻薄，拥有更大可视角度，并且较节省电能。
图1为现有OLED面板的像素电路示意图，所述像素电路包含一数据线，用于输入数据；一第一薄膜晶体管和一第二薄膜晶体管，所述第二薄膜晶体管的一栅极连接于所述第一薄膜晶体管的一汲极；一第二电容，连接于所述第二薄膜晶体管的所述栅极与一汲极；一有机发光二极管，连接于所述第二薄膜晶体管的所述汲极；一第三电容；连接于所述有机发光二极管两端；其中，在所述第一薄膜晶体管的一栅极有一扫描信号输入。
图2为现有感测电路方块图，图标有像素电路100、感测系统110、源驱动器102、控制器103、内存104、感测输入105、扫描输入106。
由于薄膜晶体管与OLED面板的老化，造成了薄膜晶体管的开启电压发生Vth_TFT偏移，以及在OLED发生Vth_oled的偏移，导致显示画质不均匀。
为了解决上述所说的显示不均匀问题，现有的电路做法如图2所示，透过感测线将每个像素电路中的第二薄膜晶体管T2以及OLED的特性感测出来，再透过外部的控制器将偏移的Vth补偿回去，使画面得到均匀的显示效果。
【发明内容】
本发明涉及一种感测电路与相应的OLED显示设备，所述感测电路是用于感测一待感测装置的微小电流与电压，所述感测电路在电流的感测的模式下，支持双重感测，去掉噪声和漏电流的影响。
依据本发明一实施例，所述OLED显示设备包含：一像素电路，所述像素电路包含：一数据线，用于输入数据；一第一薄膜晶体管；一第二薄膜晶体管，所述第二薄膜晶体管的一栅极连接于所述第一薄膜晶体管的汲极；一第三薄膜晶体管，所述第三薄膜晶体管的一源极连接于所述第二薄膜晶体管的一汲极；一第二电容，连接于所述第二薄膜晶体管的所述栅极与一汲极；一有机发光二极管，连接于所述第二薄膜晶体管的所述汲极；一第三电容；连接于所述有机发光二极管两端。
本发明的用于感测一待感测装置的微小电流与电压的感测电路包含：一放大器，具有一第一输入端与、一第二输入端与一输出端；一第一电容，连接于所述放大器的所述第一输入端与所述输出端之间；一第一切换开关，与所述第一电容并联连接；一第二切换开关，连接于所述放大器的所述第一输入端与所述待感测装置之间；一第三切换开关，连接于所述放大器的第二输入端与所述待感测装置之间；一第四切换开关，连接于所述放大器的第二输入端与一固定电压源之间；一相关两次取样电路(CDS)，连接所述放大器的所述输出端；以及一模拟数字转换器(ADC)，连接于所述相关两次取样电路。
所述相关两次取样电路用于对所述电压输出的值进行锁存，以及逻辑运算，产生一电压处理值。
所述模拟数字转换器用于对所述相关两次取样电路所产生的所述电压处理值进行数字量化，并输出。
依据本发明一实施例，当所述第二与第四开关导通，第三开关关断时，所述放大器会被当作一积分器使用。所述积分器对一电流进行积分，并通过所述第二输入端的一输入电压对所述第二薄膜晶体管进行电位嵌位，产生一电压输出给所述相关两次取样电路。
依据本发明另一实施例，当所述第一与第三开关导通，第二开关关断时，所述放大器会被当作一缓冲器使用。所述缓冲器用于通过所述第二输入端的一输入电压对所述第二薄膜晶体管进行电位嵌位，产生一电压输出给所述相关两次取样电路。
本发明在电流感测与电压感测所得到结果，对计算补偿量方式会不一样，同时支持两种方式，对应不同的状态，可做相应不同的处理。由于制程的不同，电压感测的参数与电流感测的参数在反映薄膜晶体管与OLED的特征会有所不同。本发明电路同时支持两种方式，可做相应的调整。
【附图说明】
图1是习知技术的像素电路的示意图；
图2是习知技术的感测电路方块图；
图3是依据本发明一实施例的感测电路的示意图；
图4是依据本发明的所述实施例的第一模式下的感测电路的示意图；
图5是依据本发明的所述实施例的第二模式下的感测电路的示意图；
图6a-6b是应用本发明的所述实施例的像素电路的示意图；
图7是依据本发明的所述实施例的第三模式下的感测电路的示意图；
图8是依据本发明的所述实施例的第四模式下的感测电路的示意图。
【具体实施方式】
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。
参照图3，图3是依据本发明一实施例的感测电路10的示意图。所述感测电路10包含一像素电路100，所述像素电路100包含：一数据线L_data，用于输入数据；一第一薄膜晶体管T1；一第二薄膜晶体管T2，所述第二薄膜晶体管T2的一栅极连接于所述第一薄膜晶体管的汲极；一第三薄膜晶体管T3，所述第三薄膜晶体管T3的一源极连接于所述第二薄膜晶体管的一汲极；一第二电容C1，连接于所述第二薄膜晶体管T2的所述栅极与一汲极；一有机发光二极管D，连接于所述第二薄膜晶体管T2的所述汲极；一第三电容C2；连接于所述有机发光二极管D两端；以及一感测线L_sense，连接于所述第三薄膜晶体管T3的一汲极；其中，在所述第一薄膜晶体管T1的一栅极有一扫描信号输入SCN，而在所述第三薄膜晶体管T3的一栅极有一感测信号输入SEN。
本发明的用于同时支持微小电流与电压的感测电路不同于习知技术的特征在于，包含：一感测电路101，透过所述感测线L_sense连接于所述像素电路100，所述感测电路101包含：一放大器1010，具有一第一输入端I1与、一第二输入端I2与一输出端3；一第一电容C3，连接于所述放大器1010的所述第一输入端I1与所述输出端3；一第一切换开关S1，连接于所述第一电容C3两端；一第二切换开关S2，在所述放大器1010的所述第一输入端I1与所述第一电容C3以及所述第一切换开关S1连接；一第三切换开关S3，连接于所述放大器1010的第二输入端I2与所述第二开关S2；一第四切换开关S4，连接于所述放大器1010的第二输入端I2与所述第三开关S3；一相关两次取样电路1011，连接所述放大器1010的所述输出端3；以及一模拟数字转换器1012，连接于所述相关两次取样电路1011。
其中，当所述第四开关S4导通，第二开关S2导通，第三开关S3关断时，所述放大器1010会是积分器形式，可以对流过所述第二薄膜晶体管T2和有机发光二极管D的一电流I进行积分，再透过所述模拟数字转换器1012进行采样，获得所述第二薄膜晶体管T2与有机发光二极管D的特征参数。当所述第二开关S2关断，第三开关S3短接，第一开关S1短接时，所述放大器1010会是缓冲器形式，透过所述模拟数字转换器1012对所述第二薄膜晶体管T2的电压进行采样，获得所述第二薄膜晶体管T2与有机发光二极管D的特征参数。
参照图4，图4是依据本发明的所述实施例的第一模式下的感测电路的示意图，用于感测流过所述第二薄膜晶体管T2电流。此时所述放大器1010为积分器形式，透过所述第一开关S1的导通，可让所述积分器初始化，S1开启时则开始积分；而所述第一薄膜晶体管T1与第二薄膜晶体管T2为开启，所述有机发光二极管没电流通过，因此被“X＂标记；其中所述数据线L_data输出一Vdata电压使得所述第二薄膜晶体管T2开启，而此时固定电压源VCM的比Vdata值小，所以所述有机发光二极管D是处于关闭状态。积分后的电压会被存入所述相关两次取样电路1011，所述模拟数字转换器1012对所述第二薄膜晶体管T2的电压进行采样，所采样的电压为⊿V，由以下等式得到：
⊿V＝⊿t*I/C3
其中⊿t为积分时间，I为通过所述第二晶体管的电流。
参照图5，图5是依据本发明的所述实施例的第二模式下的感测电路的示意图，用于感测流过所述有机发光二极管D电流。此时所述放大器1010为积分器形式，透过所述第一开关S1的导通，可让所述积分器初始化，S1开启时则开始积分；而所述第一薄膜晶体管T1为开启，而第二薄膜晶体管T2为关闭，因此被“X＂标记；其中所述数据线L_data输出一Vdata电压使得所述第二薄膜晶体管T2关闭，而此时固定电压源VCM的值比Vdata值大，所以所述有机发光二极管D是处于开启状态。积分后的电压会被存入所述相关两次取样电路1011，所述模拟数字转换器1012对所述第二薄膜晶体管T2的电压进行采样，所采样的电压为⊿V，由以下等式得到：
⊿V＝⊿t*I/C3
其中⊿t为积分时间，I为通过所述有机发光二极管D的电流。
参照图6a-6b，图6a-6b是应用本发明的所述实施例的像素电路的示意图，用于消除噪声(noise)电流Inoise与漏(leakage)电流Ilrakage。如图4与图5，此时所述放大器1010为积分器形式，透过所述第一开关S1的导通，可让所述积分器初始化。如图6a，将得到的电流，此处是Icurrent+Inoise+Ilrakage，所述有机发光二极管没电流通过，因此被“X＂标记，Icurrent就是前述图4中的电流I，存放于所述相关两次取样电路1011，再透过所述感测信号输入SEN将所述第三薄膜晶体管T3关闭(所述第三薄膜晶体管T3被“X＂标记)，得到Inoise+Ilrakage，并存放于所述相关两次取样电路1011，透过两存放结果，可得到Icurrent值，相当于消除了噪声电流Inoise与漏电流Ilrakage。
参照图7，图7是依据本发明的所述实施例的第三模式下的感测像素电路的示意图；用于感测所述第二薄膜晶体管T2源电压。此时所述放大器1010为缓冲器形式；而所述第一薄膜晶体管T1与第三薄膜晶体管T3对应所输入的扫描信号输入SCN与感测信号输入SEN皆为开启，所述有机发光二极管没电流通过，因此被“X＂标记；其中所述数据线L_data输出一Vdata电压使得所述第二薄膜晶体管T2开启，由于Vdata的值较小，同时固定电压源VCM的电压值小于(Vdata–Vth_TFT)，Vth_TFT为薄膜晶体管的开启电压偏移，所以所述有机发光二极管D是处于关闭状态。所述第四开关S4是关断的，由于失去固定电压源VCM的电压嵌位，所述第二薄膜晶体管T2的源极电压将发生变化。经过一段稳定时间，所述模拟数字转换器1012直接对所述第二薄膜晶体管T2的源极电压采样，获得所述第二薄膜晶体管T2的特征参数。
参照图8，图8是依据本发明的所述实施例的第四模式下的感测像素电路的示意图；用于感测所述有机发光二极管D电压。此时所述放大器1010为缓冲器形式；而所述第一薄膜晶体管T1与第三薄膜晶体管T3对应所输入的扫描信号输入SCN与感测信号输入SEN皆为开启；其中所述数据线L_data输出一Vdata电压使得所述第二薄膜晶体管T2关闭，所述第二薄膜晶体管T2因此被“X＂标记，由于固定电压源VCM的电压值大于Vdata，且大于Vth_OLED，Vth_OLED为所述有机发光二极管D的电压偏移，所以所述有机发光二极管D是处于开启状态。所述第四开关S4是关断的，由于失去固定电压源VCM的电压嵌位，所述第二薄膜晶体管T2的源极电压将发生变化。经过一段稳定时间，所述模拟数字转换器1012直接对所述第二薄膜晶体管T2的源极电压采样，获得所述有机发光二极管D的特征参数。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (14)

1.一种感测电路，用于感测一待感测装置的微小电流与电压，其特征在于，所述感测电路包含：
一放大器，具有一第一输入端与、一第二输入端与一输出端；
一第一电容，连接于所述放大器的所述第一输入端与所述输出端之间；
一第一切换开关，与所述第一电容并联连接；
一第二切换开关，连接于所述放大器的所述第一输入端与所述待感测装置之间；
一第三切换开关，连接于所述放大器的第二输入端与所述待感测装置之间；
一第四切换开关，连接于所述放大器的第二输入端与一固定电压源之间；
一相关两次取样电路(CDS)，连接所述放大器的所述输出端；以及
一模拟数字转换器(ADC)，连接于所述相关两次取样电路。
2.根据权利要求1所述的用于感测微小电流与电压的感测电路，其特征在于，当所述第二与第四开关导通，第三开关关断时，所述放大器会被当作一积分器使用。
3.根据权利要求2所述的用于感测微小电流与电压的感测电路，其特征在于，所述积分器对一电流进行积分，并通过所述第二输入端的一输入电压对所述第二薄膜晶体管进行电位嵌位，产生一电压输出给所述相关两次取样电路。
4.根据权利要求1所述的用于感测微小电流与电压的感测电路，其特征在于，当所述第一与第三开关导通，第二开关关断时，所述放大器会被当作一缓冲器使用。
5.根据权利要求4所述的用于感测微小电流与电压的感测电路，其特征在于，所述缓冲器用于通过所述第二输入端的一输入电压对所述第二薄膜晶体管进行电位嵌位，产生一电压输出给所述相关两次取样电路。
6.根据权利要求1所述的用于感测微小电流与电压的感测电路，其特征在于，所述相关两次取样电路用于对所述电压输出的值进行锁存，以及逻辑运算，产生一电压处理值。
7.根据权利要求1所述的用于感测微小电流与电压的感测电路，其特征在于，所述模拟数字转换器用于对所述相关两次取样电路所产生的所述电压处理值进行数字量化，并输出。
8.一种OLED显示设备，其特征在于，包含：
一像素电路，包含：
一数据线，用于输入数据；
一第一薄膜晶体管和一第二薄膜晶体管，所述第二薄膜晶体管的一栅极连接于所述第一薄膜晶体管的一汲极；
一第二电容，连接于所述第二薄膜晶体管的所述栅极与一汲极；
一有机发光二极管，连接于所述第二薄膜晶体管的所述汲极；
一第三电容；连接于所述有机发光二极管两端；其中，在所述第一薄膜晶体管的一栅极有一扫描信号输入；
以及
一感测电路，用于感测微小电流与电压，与所述像素电路连接，包含：
一放大器，具有一第一输入端与、一第二输入端与一输出端；
一第一电容，连接于所述放大器的所述第一输入端与所述输出端之间；
一第一切换开关，与所述第一电容两端并联连接；
一第二切换开关，连接于所述放大器的所述第一输入端与所述像素电路之间；
一第三切换开关，连接于所述放大器的第二输入端与所述像素电路之间；
一第四切换开关，连接于所述放大器的第二输入端与一固定电压源之间；
一相关两次取样电路(CDS)，连接所述放大器的所述输出端；以及
一模拟数字转换器(ADC)，连接于所述相关两次取样电路。
9.根据权利要求8所述的OLED显示设备，其特征在于，当所述第二与第四开关导通，第三开关关断时，所述放大器会被当作一积分器使用。
10.根据权利要求9所述的OLED显示设备，其特征在于，所述积分器对一电流进行积分，并通过所述第二输入端的一输入电压对所述第二薄膜晶体管进行电位嵌位，产生一电压输出给所述相关两次取样电路。
11.根据权利要求8所述的OLED显示设备，其特征在于，当所述第一与第三开关导通，第二开关关断时，所述放大器会被当作一缓冲器使用。
12.根据权利要求11所述的OLED显示设备，其特征在于，所述缓冲器用于通过所述第二输入端的一输入电压对所述第二薄膜晶体管进行电位嵌位，产生一电压输出给所述相关两次取样电路。
13.根据权利要求8所述的OLED显示设备，其特征在于，所述相关两次取样电路用于对所述电压输出的值进行锁存，以及逻辑运算，产生一电压处理值。
14.根据权利要求8所述的OLED显示设备，其特征在于，所述模拟数字转换器用于对所述相关两次取样电路所产生的所述电压处理值进行数字量化，并输出。
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