WO2017076361A1 - Résonateur à quartz smd et procédé d'usinage de boîtier de carte complète correspondant - Google Patents
Résonateur à quartz smd et procédé d'usinage de boîtier de carte complète correspondant Download PDFInfo
- Publication number
- WO2017076361A1 WO2017076361A1 PCT/CN2016/104821 CN2016104821W WO2017076361A1 WO 2017076361 A1 WO2017076361 A1 WO 2017076361A1 CN 2016104821 W CN2016104821 W CN 2016104821W WO 2017076361 A1 WO2017076361 A1 WO 2017076361A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- metal
- whole
- quartz crystal
- ceramic
- plate
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 67
- 239000010453 quartz Substances 0.000 title claims abstract description 65
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 238000003754 machining Methods 0.000 title abstract 6
- 239000002184 metal Substances 0.000 claims abstract description 105
- 239000000919 ceramic Substances 0.000 claims abstract description 83
- 238000004806 packaging method and process Methods 0.000 claims abstract description 12
- 239000011159 matrix material Substances 0.000 claims abstract description 11
- 238000012545 processing Methods 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 10
- 239000003292 glue Substances 0.000 claims description 8
- 238000003698 laser cutting Methods 0.000 claims description 7
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 7
- 238000003466 welding Methods 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 230000011218 segmentation Effects 0.000 claims description 3
- 230000002950 deficient Effects 0.000 claims description 2
- 238000001514 detection method Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 20
- 230000007774 longterm Effects 0.000 abstract description 4
- 238000000638 solvent extraction Methods 0.000 abstract 1
- 238000003672 processing method Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
Definitions
- the invention relates to a novel SMD quartz crystal resonator and a whole board packaging processing technology thereof, and belongs to the technical field of electronic components and processing techniques thereof.
- the production process of the existing SMD quartz crystal resonator is as follows: 1. The ceramic whole plate is processed according to the quartz crystal resonator ceramic substrate production process, and then divided and selected to form a single SMD quartz crystal resonator ceramic base. 2, the wafer is cleaned, coated, and glued in the pedestal to form a single SMD quartz crystal resonator; 3. A single metal piece (ceramic piece) is processed, and the cover is sealed on the resonator to form a single SMD quartz. Crystal resonator.
- the above production process not only has low production efficiency, but also has high material cost.
- SMD quartz crystal resonators and metal sheets are sealed in the following four ways: 1. Parallel sealing (metal packaging); 2. Tunnel furnace hot-melt sealing (gold-tin package); 3. Plastic packaging (resin glue or glass glue); 4, electron beam sealing (metal package).
- the invention solves the deficiencies in the prior art, and provides an SMD quartz crystal resonator with low material cost, small stress and long-term stability of product frequency, and a processing method of the resonator, which does not need
- the pedestal is transferred to the tooling processing, which has high production efficiency, small space occupation and low production cost.
- the whole process of the whole board packaging process of a novel SMD quartz crystal resonator of the invention is that the raw material for the production does not use a single SMD quartz crystal resonator ceramic base and a single metal piece, and the whole plate ceramic base is used instead. It is processed into a whole plate resonator, sealed with a metal plate, and finally divided into a single SMD quartz crystal resonator, including the following process steps:
- a plurality of quartz crystal pedestals 2 arranged in a matrix are processed on the ceramic whole plate 1.
- the susceptors of the ceramic whole plate 1 may be welded with metal rings or not welded, and the pedestals are connected but not electrically connected;
- the metal whole plate 4 is processed according to the size and structure of the ceramic whole plate 1, and a plurality of metal pieces 5 having the same matrix shape as the respective bases 2 on the ceramic whole plate 1 are formed on the metal whole plate 4, and the adjacent metal pieces 5 pass between The metal connecting wires 6 are connected;
- the wafer is placed in each of the susceptors 2 on the ceramic whole plate 1 to be dispensed and solidified to form a plurality of Quartz crystal resonator, further fine-tuning the resonators on the ceramic whole plate 1;
- the metal whole plate 4 is covered on the respective resonators of the ceramic whole plate 1, and the periphery of each metal piece 5 of the metal whole plate 4 is mounted on the metallization layer 11 of each of the susceptors 2 of the corresponding ceramic whole plate 1. Processed and sealed as a whole;
- the metal connection lines 6 between the metal sheets 5 are cut, and the respective connected quartz crystal resonators are formed on the ceramic whole board 1;
- each connected quartz crystal resonator is tested on the ceramic whole board 1, and the defective product is marked, and then the ceramic whole board is divided, and a qualified quartz crystal crystal resonator is sorted and packaged.
- the ceramic whole board 1 is provided with four ceramic whole board positioning holes 7 on both sides in the longitudinal direction, and the metal whole board positioning holes 8 are also provided at the same position of the corresponding metal whole board 4, the step 4 When the ceramic whole plate 1 and the metal whole plate 4 are packaged, the metal whole plate 4 is covered on the ceramic whole plate 1 by using a clamp and overlapping by the positioning holes;
- the periphery of each metal piece of the metal whole plate 4 is mounted on the metal plating layer of each pedestal 2 of the corresponding ceramic whole plate 1, and is laser welded. Fusion welding as one; or use metal plate material and base metal plating to heat melt through the tunnel furnace; or apply resin glue or glass glue on the periphery of each metal plate 5 of the metal whole plate 4, and then the base of the ceramic whole plate 1 2 bonding;
- the respective metal wires 6 are cut by a laser to form respective connected quartz crystal resonators.
- the novel SMD quartz crystal resonator and the whole board packaging processing technology of the invention have the following beneficial effects: 1.
- the raw material adopts ceramic whole board, the structure is compact, the dividing process is omitted, the procurement cost is low; 2.
- the whole process is directly adopted in the production process. Transfer, no need to transfer a single load on the tooling, occupying small space, high production efficiency, low production cost; 3, the metal piece is completed by purchasing the whole plate metal laser cutting, without purchasing the processed metal piece, saving material cost; 4
- 4 innovatively adopts the current advanced laser cutting and welding process, the product has small deformation and reduced stress, which is conducive to the long-term stability of the product frequency.
- the material cost and production cost of the product of the invention are lower than that of the conventional product, and the high production efficiency has a good application prospect in the field of electronic component processing.
- Figure 1 Schematic diagram of a novel SMD quartz crystal resonator ceramic whole plate of the present invention
- FIG. 2 is a schematic structural view of a novel SMD quartz crystal resonator base according to the present invention.
- Figure 3 side view of Figure 2;
- Figure 4 Rear view of Figure 2
- FIG. 5 is a schematic structural view of a metal whole plate of a novel SMD quartz crystal resonator according to the present invention.
- FIG. 6 is a schematic structural view of a novel SMD quartz crystal resonator metal piece according to the present invention.
- FIG. 7 is a schematic structural view of a novel SMD quartz crystal resonant device of the present invention.
- Fig. 8 is a schematic view showing the melting structure of each of the resonating members of the ceramic plate and the metal plates of the whole metal plate of the novel SMD quartz crystal resonator of the present invention.
- the ceramic whole plate 1 structure is arranged in a matrix according to each phase of the quartz crystal base 2, and is not conductive; the ceramic whole plate 1 each base 2 is welded with a metal ring or not The welding metal ring can be; the ceramic whole board 1 is provided with ceramic whole board positioning holes 7 on both sides;
- the wafer 3 is placed in each of the susceptors 2 of the ceramic whole plate 1, and the dispensing platform 9 and the sub-electrode 10 of the wafer 3 are connected by the conductive adhesive 12; and the ceramic whole plate 1 is placed in the tunnel.
- the furnace is cured and annealed by the conductive adhesive to realize the connection between the wafer 3 and the susceptor 2, and a plurality of quartz crystal resonators arranged in a matrix are formed on the ceramic whole plate 1;
- each quartz crystal resonator is finely adjusted to reach a target frequency
- the ceramic whole plate positioning hole 7 and the metal whole plate positioning hole 8 are positioned, the metal whole plate 4 is covered on the ceramic whole plate 1 and pressed, and placed in a vacuum chamber, and the laser is passed through the gap of the clamp plate to perform two weldings. , the metal plate of the metal whole plate 4 and the periphery of each quartz crystal resonator of the ceramic whole plate 1 are welded;
- the ceramic whole plate 1 of the embodiment realizes several quartz crystal resonators and the metal strip
- the processing method for forming the metal whole plate 4 is the same as that of the first embodiment. The difference is that when the metal whole plate 4 and the ceramic whole plate 1 are packaged in step 4), the high-temperature ultraviolet resin is coated on the periphery of each metal piece 5 of the metal whole plate 4. The glue or glass glue is bonded to the susceptors 2 of the ceramic whole plate 1 in a vacuum chamber.
- the ceramic whole plate 1 of the embodiment realizes several quartz crystal resonators and the metal strip
- the processing method for forming the metal whole plate 4 is the same as that of the first embodiment. The difference is that when the metal whole plate 4 and the ceramic whole plate 1 are packaged in step 4), an alloy material having a melting point of 300 to 400 degrees Celsius is selected as the metal whole plate material.
- the metallized coating material of the ceramic whole plate 1 is heat-sealed in a tunnel furnace.
- the invention relates to an SMD quartz crystal resonator and a processing method thereof, which have the following beneficial effects: 1.
- the raw material adopts a ceramic whole board, the structure is compact, the dividing process is omitted, and the procurement cost is low; 2.
- the production process is directly transmitted by the whole board, and is not required. Single transfer on the tooling, small footprint, high production efficiency, low production cost; 3, the metal sheet is completed by purchasing the whole plate metal laser cutting, without purchasing the processed metal sheet, saving material cost; 4, innovation adopts the current Advanced laser cutting and welding processes, the product has small deformation and reduced stress, which is conducive to the long-term stability of the product frequency.
- the material cost and production cost of the product of the invention are lower than that of the conventional product, and the high production efficiency has a good application prospect in the field of electronic component processing.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
L'invention concerne un procédé d'usinage de boîtier de carte complète pour un résonateur à quartz pour montage en surface (SMD). Le procédé d'usinage de boîtier de carte complète comprend les étapes d'usinage suivantes : (1), usinage d'une pluralité de bases en quartz (2) agencées selon une matrice sur une carte complète céramique (1); (2), formation d'une pluralité de feuilles métalliques (5), dans la même forme de matrice que chaque base (2) sur la carte complète céramique (1), sur une carte complète métallique (4), les feuilles métalliques adjacentes (5) étant connectées au moyen d'un fil de connexion métallique (6); (3), usinage d'une partie résonnante en quartz sur la carte complète céramique (1); et (4) encapsulation de la carte complète céramique (1) et de la carte complète métallique (4), et enfin, division du résultat en un résonateur à quartz SMD individuel. Le résonateur SMD présente un faible coût de fabrication et de faibles contraintes, contribue à la stabilité à long terme de la fréquence du produit, et présente un processus de fabrication simple et commode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018517366A JP2018533869A (ja) | 2015-11-05 | 2016-11-07 | Smd水晶共振器及びその一枚板パッケージング加工工程 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510746226.0 | 2015-11-05 | ||
CN201510746226.0A CN105305995B (zh) | 2015-11-05 | 2015-11-05 | 一种smd石英晶体谐振器及其整板封装加工工艺 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017076361A1 true WO2017076361A1 (fr) | 2017-05-11 |
Family
ID=55202855
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2016/104821 WO2017076361A1 (fr) | 2015-11-05 | 2016-11-07 | Résonateur à quartz smd et procédé d'usinage de boîtier de carte complète correspondant |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2018533869A (fr) |
CN (1) | CN105305995B (fr) |
WO (1) | WO2017076361A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116582102A (zh) * | 2023-07-13 | 2023-08-11 | 东晶电子金华有限公司 | 一种石英晶体谐振器提高封装技术的方法 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105305995B (zh) * | 2015-11-05 | 2016-11-30 | 烟台明德亨电子科技有限公司 | 一种smd石英晶体谐振器及其整板封装加工工艺 |
CN106067776B (zh) * | 2016-07-06 | 2018-10-02 | 烟台明德亨电子科技有限公司 | 表面贴石英晶体谐振器生产中非接触式喷胶系统及方法 |
CN106067775B (zh) * | 2016-07-06 | 2019-04-26 | 四川明德亨电子科技有限公司 | 表面贴石英晶体谐振器生产中整板上片装置及方法 |
CN108111139B (zh) * | 2016-11-25 | 2023-10-31 | 四川明德亨电子科技有限公司 | 一种smd石英谐振器及其加工设备及方法 |
CN106877833B (zh) * | 2016-12-29 | 2020-04-14 | 北京晨晶电子有限公司 | 一种石英晶体谐振器的加工方法 |
CN107517044B (zh) * | 2017-08-10 | 2024-04-09 | 四川明德亨电子科技有限公司 | 一种整板smd石英晶体谐振器基板结构及其加工方法 |
CN107517043B (zh) * | 2017-08-10 | 2023-10-20 | 四川明德亨电子科技有限公司 | 一种smd石英晶体谐振器加工方法及其谐振器 |
CN109639254B (zh) * | 2018-11-28 | 2023-05-09 | 江苏浩都频率科技有限公司 | 一种smd3225晶片的谐振器制造工艺 |
CN109617535B (zh) * | 2018-11-28 | 2023-09-15 | 江苏浩都频率科技有限公司 | 一种smd2016晶片的谐振器制造工艺 |
CN110086443A (zh) * | 2019-05-07 | 2019-08-02 | 中山市镭通激光科技有限公司 | 一种晶振的制造方法 |
CN110504939A (zh) * | 2019-08-29 | 2019-11-26 | 北京康特睿科光电科技有限公司 | 一种晶体振荡器及其制造方法 |
CN110798164A (zh) * | 2019-10-25 | 2020-02-14 | 苏师大半导体材料与设备研究院(邳州)有限公司 | 一种电子元器件的制造方法 |
CN116455343B (zh) * | 2023-05-15 | 2024-01-23 | 烟台明德亨电子科技有限公司 | 一种晶振用陶瓷基座的加工方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009182873A (ja) * | 2008-01-31 | 2009-08-13 | Daishinku Corp | 圧電振動デバイスの製造方法および圧電振動デバイス |
CN201345640Y (zh) * | 2008-11-20 | 2009-11-11 | 浙江东晶电子股份有限公司 | 一种宽温smd石英晶体谐振器 |
CN102355225A (zh) * | 2011-08-02 | 2012-02-15 | 台晶(宁波)电子有限公司 | 石英晶体谐振器用的低温陶瓷整板式平基板基座 |
CN105305995A (zh) * | 2015-11-05 | 2016-02-03 | 烟台大明电子科技有限公司 | 一种新型smd石英晶体谐振器及其整板封装加工工艺 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080054759A1 (en) * | 2006-08-11 | 2008-03-06 | Farrokh Ayazi | Wafer-level encapsulation and sealing of electrostatic transducers |
CN101873112A (zh) * | 2010-07-07 | 2010-10-27 | 铜陵市晶赛电子有限责任公司 | 超薄型陶瓷封装石英晶体谐振器 |
CN102035495A (zh) * | 2010-11-03 | 2011-04-27 | 李斌 | 基座、石英晶体谐振器及加工工艺 |
-
2015
- 2015-11-05 CN CN201510746226.0A patent/CN105305995B/zh active Active
-
2016
- 2016-11-07 JP JP2018517366A patent/JP2018533869A/ja active Pending
- 2016-11-07 WO PCT/CN2016/104821 patent/WO2017076361A1/fr active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009182873A (ja) * | 2008-01-31 | 2009-08-13 | Daishinku Corp | 圧電振動デバイスの製造方法および圧電振動デバイス |
CN201345640Y (zh) * | 2008-11-20 | 2009-11-11 | 浙江东晶电子股份有限公司 | 一种宽温smd石英晶体谐振器 |
CN102355225A (zh) * | 2011-08-02 | 2012-02-15 | 台晶(宁波)电子有限公司 | 石英晶体谐振器用的低温陶瓷整板式平基板基座 |
CN105305995A (zh) * | 2015-11-05 | 2016-02-03 | 烟台大明电子科技有限公司 | 一种新型smd石英晶体谐振器及其整板封装加工工艺 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116582102A (zh) * | 2023-07-13 | 2023-08-11 | 东晶电子金华有限公司 | 一种石英晶体谐振器提高封装技术的方法 |
CN116582102B (zh) * | 2023-07-13 | 2023-09-29 | 东晶电子金华有限公司 | 一种石英晶体谐振器提高封装技术的方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2018533869A (ja) | 2018-11-15 |
CN105305995A (zh) | 2016-02-03 |
CN105305995B (zh) | 2016-11-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2017076361A1 (fr) | Résonateur à quartz smd et procédé d'usinage de boîtier de carte complète correspondant | |
US8179023B2 (en) | Package-type piezoelectric resonator and method of manufacturing package-type piezoelectric resonator | |
JP3772740B2 (ja) | 電子部品の製造方法 | |
US9215802B2 (en) | Wiring substrate and multi-piece wiring substrate | |
US6437412B1 (en) | Surface acoustic wave device having a package including a conductive cap that is coated with sealing material | |
US20120023720A1 (en) | Piezoelectric devices and methods for manufacturing same | |
JP2011040577A (ja) | 発光装置の製造方法 | |
JP2015128276A (ja) | 表面実装水晶振動子及びその製造方法 | |
CN110649909B (zh) | 一种声表面波滤波器件晶圆级封装方法及其结构 | |
CN102377406A (zh) | 带贯通电极的玻璃基板的制造方法及电子部件的制造方法 | |
US8499443B2 (en) | Method of manufacturing a piezoelectric vibrator | |
CN204615781U (zh) | 一种石英晶体谐振器 | |
US8227271B1 (en) | Packaging method of wafer level chips | |
JP5573991B2 (ja) | 接合用ウェハ | |
US20220416759A1 (en) | Piezoelectric vibration plate, piezoelectric vibration device, and manufacturing method for piezoelectric vibration device | |
JP2002208831A (ja) | 水晶振動子及び水晶振動子の製造方法 | |
TW201304629A (zh) | 良品基板陣列模組及其製造方法 | |
JP2010166626A (ja) | 圧電デバイス | |
TWI435456B (zh) | 電極焊接結構、背電極太陽能電池模組及太陽能電池模組製作方法 | |
JP5432533B2 (ja) | 電子デバイスの製造方法 | |
JP2007318209A (ja) | 表面実装型圧電振動デバイス、およびその製造方法 | |
JP5915179B2 (ja) | 電子デバイス、発振器、電子デバイスの製造方法、及び発振器の製造方法 | |
CN216216808U (zh) | 一种贴片音叉谐振器的结构 | |
JP2013140876A (ja) | 電子デバイスの製造方法、電子デバイス、圧電発振器、及び電子機器 | |
CN101651110A (zh) | 小型化smd产品的生产工艺 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16861629 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2018517366 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 16861629 Country of ref document: EP Kind code of ref document: A1 |