WO2017064893A1 - 酸化物超電導線材 - Google Patents
酸化物超電導線材 Download PDFInfo
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- WO2017064893A1 WO2017064893A1 PCT/JP2016/070578 JP2016070578W WO2017064893A1 WO 2017064893 A1 WO2017064893 A1 WO 2017064893A1 JP 2016070578 W JP2016070578 W JP 2016070578W WO 2017064893 A1 WO2017064893 A1 WO 2017064893A1
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
- H01B12/02—Superconductive or hyperconductive conductors, cables, or transmission lines characterised by their form
- H01B12/06—Films or wires on bases or cores
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G1/00—Methods of preparing compounds of metals not covered by subclasses C01B, C01C, C01D, or C01F, in general
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G3/00—Compounds of copper
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G3/00—Compounds of copper
- C01G3/006—Compounds containing, besides copper, two or more other elements, with the exception of oxygen or hydrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F6/00—Superconducting magnets; Superconducting coils
- H01F6/06—Coils, e.g. winding, insulating, terminating or casing arrangements therefor
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Definitions
- the present invention relates to an oxide superconducting wire.
- This application claims priority based on Japanese Patent Application No. 2015-203745 filed on October 15, 2015, and incorporates all the description content described in the above Japanese application.
- Patent Document 1 discloses an oxide superconductor comprising an oriented metal substrate, an intermediate layer formed on the oriented metal substrate, and an oxide superconducting layer formed on the intermediate layer. The wire is described.
- the oxide superconducting wire of the present disclosure includes an oriented metal substrate, an intermediate layer formed on the oriented metal substrate, and an oxide superconducting layer formed on the intermediate layer.
- the in-plane orientation ( ⁇ ) of the oriented metal substrate is 7 ° or less.
- the intermediate layer is composed of a single layer.
- the orientation of the oxide superconducting layer can be improved by interposing an intermediate layer between the oriented metal substrate and the oxide superconducting layer.
- the orientation refers to the degree to which the crystal orientations of the crystal grains are aligned.
- the diffusion and reaction of elements between the substrate and the oxide superconducting layer can be suppressed.
- excellent characteristics such as a high critical current density (Jc) and a high critical current (Ic) can be obtained.
- an intermediate layer is formed by laminating a plurality of layers on an oriented metal substrate.
- an intermediate layer for example, a three-layer structure composed of CeO 2 (ceria) / YSZ (yttria stabilized zirconia) / Y 2 O 3 (yttria) is often employed. Therefore, in the step of forming the intermediate layer on the oriented metal substrate, a plurality of film forming processes are required corresponding to the plurality of layers, and there is a problem that the manufacturing cost increases.
- an object of the present disclosure is to provide an oxide superconducting wire whose manufacturing cost is reduced while maintaining excellent superconducting characteristics.
- the oxide superconducting wire 1 (see FIG. 1) according to one aspect of the present invention was formed on an oriented metal substrate 10, an intermediate layer 20 formed on the oriented metal substrate 10, and an intermediate layer 20. And an oxide superconducting layer 30.
- the in-plane orientation ( ⁇ ) of the oriented metal substrate 10 is 7 ° or less.
- the intermediate layer 20 is composed of a single layer.
- the in-plane orientation of the oriented metal substrate 10 is a half of the peak obtained by ⁇ scan of the (111) plane of the oriented metal substrate 10 by X-ray diffraction (XRD). It can be obtained from the full width value (FWHM: Full Width at Half Maximum).
- the orientation of the intermediate layer 20 formed on the oriented metal substrate 10 is good. Can be. Thereby, even if it is the single
- the single layer intermediate layer 20 can be formed with good orientation, so that the thickness of the intermediate layer 20 can be reduced as compared with the conventional oxide superconducting wire. Thereby, manufacturing cost can be reduced. As a result, it is possible to realize an oxide superconducting wire whose manufacturing cost is reduced while maintaining excellent superconducting characteristics.
- the in-plane orientation ⁇ of the oriented metal substrate 10 can be more preferably 6 ° or less.
- the oriented metal substrate 10 is preferably a clad substrate.
- a clad substrate having a laminated structure of NiW / SUS or a clad substrate having a laminated structure of Ni / Cu / SUS can be used.
- the superconducting property (Ic) can be improved under the same intermediate layer thickness as compared with the oxide superconducting wire using the Ni—W alloy substrate as the oriented metal substrate.
- the thickness of the intermediate layer 20 is preferably 10 nm or more. In this way, the single-layered intermediate layer 20 can be formed with good orientation. More preferably, the thickness of the intermediate layer 20 is 200 nm or less. In this way, it is possible to improve the orientation of the oxide superconducting layer 30 and reduce the manufacturing cost.
- the in-plane orientation ⁇ of the intermediate layer 20 is preferably 8 ° or less. In this way, since the single-layer intermediate layer 20 has good orientation, the orientation of the oxide superconducting layer 30 formed on the intermediate layer 20 can be made favorable.
- the in-plane orientation of the intermediate layer 20 is preferably equal to or greater than the in-plane orientation of the oriented metal substrate 10.
- the in-plane orientation is equal to or greater than that means that ⁇ of the intermediate layer 20 is equal to or smaller than ⁇ of the oriented metal substrate 10.
- the value obtained by dividing the difference between ⁇ of the intermediate layer 20 and ⁇ of the oriented metal substrate 10 by ⁇ of the oriented metal substrate 10 is preferably 15% or less.
- the oriented metal substrate 10 has the oxide layer 11 on the uppermost portion in contact with the intermediate layer 20. May be included.
- FIG. 1 is a schematic cross-sectional view illustrating a configuration of an oxide superconducting wire according to an embodiment.
- FIG. 1 shows a cross section cut in a direction crossing a direction in which the oxide superconducting wire 1 according to the embodiment extends.
- the direction crossing the paper surface is the longitudinal direction of the oxide superconducting wire 1
- the superconducting current of the oxide superconducting layer 30 flows along the direction crossing the cross section.
- the vertical direction hereinafter also referred to as “thickness direction”
- the left-right direction hereinafter also referred to as “width direction”
- the length in the thickness direction of the cross section is sufficiently smaller than the length in the width direction.
- an oxide superconducting wire 1 has an elongated shape (tape shape) having a rectangular cross section, and here, a relatively large surface extending in the longitudinal direction of the elongated shape. Is the main surface.
- the oxide superconducting wire 1 includes an oriented metal substrate 10 whose surface is oriented and crystallized, an intermediate layer 20, an oxide superconducting layer 30, a protective layer 40, and a stabilizing layer 50.
- the oriented metal substrate 10 means a substrate in which crystal orientations are aligned in two axial directions in the plane of the substrate surface.
- Examples of the oriented metal substrate 10 include nickel (Ni), copper (Cu), chromium (Cr), manganese (Mn), cobalt (Co), iron (Fe), palladium (Pd), silver (Ag), tungsten ( An alloy made of two or more metals of W) and gold (Au) is preferably used. These metals can also be laminated with other metals or alloys.
- the alignment metal substrate 10 may be formed by bonding an alignment metal layer to the surface of the substrate.
- the substrate is non-oriented and non-magnetic and has a higher strength than the oriented metal layer.
- SUS stainless steel
- Ni-based alloy or the like is used.
- the material for the alignment metal layer include Ni, NiW (nickel tungsten), and Cu (copper), but are not limited to these materials.
- the alignment is performed by a method such as plating.
- a coating layer made of Ni or the like may be formed on the surface of the metal layer.
- an oriented metal substrate 10 for example, a clad substrate having a laminated structure of NiW / SUS or a clad substrate having a laminated structure of Ni / Cu / SUS can be used. According to this, the strength of the oriented metal substrate can be improved as compared with the case of the oriented metal layer alone. Moreover, since the board
- the in-plane orientation ⁇ of the oriented metal substrate 10 is preferably 7 ° or less.
- the intermediate layer 20 is formed on the oriented metal substrate 10.
- the intermediate layer 20 is composed of a single layer.
- the material constituting the intermediate layer 20 is preferably an oxide having a crystal structure of any one of rock salt type, fluorite type, perovskite type, and pyrochlore type.
- oxides having such a crystal structure include rare earth element oxides such as CeO 2 (ceria), Ho 2 O 3 (holmium oxide), and Yb 2 O 3 (ytterbium oxide), YSZ (yttria stabilized zirconia), MgO.
- Magnetic oxide oxides such as Al 2 O 3 (aluminum oxide), ABO 3 perovskite type compounds such as SrTiO 3 (strontium titanate), BaZrO 3 (barium zirconate), LaMnO 3 (A is Ca, Ba, One or more elements selected from Sr and lanthanoid elements, B is one or more elements selected from Ti, Cr, Mn, Fe, Co, Ni, Zr, Nb, Mo, and Gd, and O is oxygen ).
- Y 2 O 3 , SrTiO 3 , LaMnO 3 and the like are preferably used from the viewpoint of crystal constant and crystal orientation.
- middle layer 20 is not specifically limited to this.
- the intermediate layer 20 preferably has a good orientation.
- the in-plane orientation ⁇ of the intermediate layer 20 is preferably 8 ° or less.
- the oxide superconducting layer 30 is formed on the intermediate layer 20.
- the material of the oxide superconducting layer 30 is preferably, for example, a RE123-based oxide superconductor.
- the RE123-based oxide superconductor means a superconductor represented by a composition formula of REBa 2 Cu 3 O y .
- RE represents Y (yttrium), Gd (gadolinium), Sm (samarium), Ho (holmium), La (lanthanum), Nd (neodymium), Eu (europium), Dy (dysprosium), Er ( Represents one or more of rare earth elements such as erbium), Yb (ytterbium) and Lu (lutetium).
- y is 6 to 8, more preferably 6.8 to 7.
- the thickness of the oxide superconducting layer 30 is preferably 1 to 5 ⁇ m.
- the protective layer 40 is formed on the oxide superconducting layer 30 in order to protect the oxide superconducting layer 30.
- the protective layer 40 is made of, for example, Ag or an Ag alloy. Further, the protective layer 40 is not limited to the Ag protective layer. For example, a Cu protective layer made of Cu or a Cu alloy may be used instead of the Ag protective layer.
- a laminated body is formed by the oriented metal substrate 10, the intermediate layer 20, the oxide superconducting layer 30, and the protective layer 40 described above.
- the stabilization layer 50 is formed so that the circumference
- the stabilization layer 50 is formed so as to cover the outer periphery of the stacked body, that is, to cover almost the entire outermost surface of the stacked body.
- the “periphery of the laminate” in the present invention is not limited to the entire circumference, and may be only the upper main surface of the laminate.
- the stabilization layer 50 is made of a highly conductive metal material foil or plating layer.
- the material constituting the stabilization layer 50 is preferably Cu or a Cu alloy.
- the stabilization layer 50 functions as a bypass along with the protective layer 40 when the oxide superconducting layer 30 transitions from the superconducting state to the normal conducting state.
- the intermediate layer 20 interposed between the oriented metal substrate 10 and the oxide superconducting layer 30 is composed of a single layer. .
- FIG. 2 is a schematic cross-sectional view showing a configuration example of a conventional oxide superconducting wire.
- the oxide superconducting wire has an intermediate layer 120 having a three-layer structure.
- the intermediate layer 120 includes a CeO 2 layer 121, a YSZ layer 122 formed on the CeO 2 layer 121, and a CeO 2 layer 123 formed on the YSZ layer 122.
- the CeO 2 layer 121 is a seed layer for forming a biaxially oriented ceramic layer on the oriented metal substrate 110.
- the YSZ layer 122 is a diffusion preventing layer for preventing elements from the oriented metal substrate 110 from diffusing into the oxide superconducting layer 130.
- the CeO 2 layer 123 is a lattice matching layer of the intermediate layer 120 and the oxide superconducting layer 130 for growing the c-axis oriented oxide superconducting layer 130.
- the oxide superconducting wire shown in FIG. 2 good orientation is ensured by interposing an intermediate layer 120 composed of a plurality of layers between the oriented metal substrate 110 and the oxide superconducting layer 130.
- the step of forming the intermediate layer 120 the CeO 2 layer forming step, the YSZ layer forming step, and the CeO 2 layer 121, the YSZ layer 122, and the CeO 2 layer 123 are sequentially formed on the oriented metal substrate 110. Since it is necessary to sequentially perform the process and the CeO 2 layer forming process, the manufacturing cost is increased.
- the inventors of the present invention examined the thinning of the intermediate layer from the viewpoint of reducing the manufacturing cost.
- the orientation of the oriented metal substrate has an influence on the orientation of the intermediate layer, and by improving the orientation of the oriented metal substrate, an intermediate layer having good orientation even in a single-layered intermediate layer. It was confirmed that a layer can be formed and that an element from the oriented metal substrate can be prevented from diffusing into the oxide superconducting layer.
- the oxide superconducting wire 1 according to the present embodiment is based on the above knowledge, and the single layer intermediate layer 20 can be formed with good orientation on the oriented metal substrate 10 having good orientation. Compared to the conventional oxide superconducting wire shown in FIG. 2, the thickness of the intermediate layer 20 can be reduced. Thereby, the manufacturing cost can be reduced while maintaining excellent superconducting characteristics.
- the in-plane orientation ⁇ of the oriented metal substrate 10 is preferably 7 ° or less.
- the in-plane orientation ⁇ of the oriented metal substrate 10 can be more preferably 6 ° or less.
- the in-plane orientation of the oriented metal substrate 10 can be evaluated by measuring the diffraction orientation of a specific surface by X-ray diffraction (XRD).
- XRD measurement for example, RINT manufactured by Rigaku Corporation can be used as the X-ray generator.
- the X-ray source Cu K ⁇ ray is used.
- X-rays are generated with an output of 40 kV and 40 mA.
- the in-plane orientation ⁇ of the oriented metal substrate 10 can be obtained from the FWHM of ⁇ scan of the (111) plane of the main surface of the oriented metal substrate 10.
- the protective layer 40 and the oxidation layer are measured.
- the protective layer 40 can be peeled by etching the protective layer 40 with a mixed solution of hydrogen peroxide and ammonia, for example.
- the oxide superconducting layer 30 can be peeled off by etching the oxide superconducting layer 30 with nitric acid, for example. Since the intermediate layer 20 is thin and transmits X-rays, the measurement of the orientation degree of the oriented metal substrate 10 is not affected even if the intermediate layer 20 is not peeled off.
- the in-plane orientation ⁇ of the oriented metal substrate 10 is 7 ° or less, the lattice matching between the oriented metal substrate 10 and the oxide superconducting layer 30 is relaxed even if the thickness of the single-layer intermediate layer 20 is reduced.
- the element for example, Ni
- the oxide superconducting layer 30 can be formed with good orientation on the intermediate layer 20 made of a single-layer thin film, the superconducting characteristics of the oxide superconducting wire 1 are improved.
- the in-plane orientation ⁇ of the oriented metal substrate 10 is larger than 7 °, the element from the oriented metal substrate 10 is formed by the intermediate layer 20 when the oxide superconducting layer 30 is formed at a high temperature. It becomes difficult to prevent (for example, Ni) from diffusing into the oxide superconducting layer 30. As a result, the crystallinity (orientation and surface smoothness) of the oxide superconducting layer 30 may deteriorate or the superconducting transition temperature (Tc) may decrease. Such deterioration of the crystallinity of the oxide superconducting layer 30 and a decrease in Tc lead to a deterioration in the superconducting characteristics of the oxide superconducting wire 1 (for example, a decrease in Ic).
- the thickness of the single-layered intermediate layer 20 In order to prevent the element from diffusing between the oriented metal substrate 10 and the oxide superconducting layer 30, the thickness of the single-layered intermediate layer 20 must be increased, and the effect of reducing the manufacturing cost cannot be exhibited. there is a possibility.
- the thickness of the single-layered intermediate layer 20 is preferably 10 nm or more and 200 nm or less. If the thickness of the intermediate layer 20 is 10 nm or more, the intermediate layer 20 can exhibit functions as a diffusion preventing layer and a lattice matching layer. On the other hand, when the thickness of the intermediate layer 20 exceeds 200 nm, the effect of reducing the manufacturing cost is reduced. That is, when the thickness of the intermediate layer 20 is 10 nm or more and 200 nm or less, the crystallinity (orientation and surface smoothness) of the oxide superconducting layer 30 can be improved, and the manufacturing cost can be reduced.
- the in-plane orientation ⁇ of the intermediate layer 20 is preferably equal to or greater than the in-plane orientation ⁇ of the oriented metal substrate 10.
- the value obtained by dividing the difference between ⁇ of the intermediate layer 20 and ⁇ of the oriented metal substrate 10 by ⁇ of the oriented metal substrate 10 is preferably 15% or less.
- the in-plane orientation ⁇ of the intermediate layer 20 is preferably 8 ° or less.
- the thickness of the intermediate layer 20 is larger than 200 nm in order to obtain good orientation in the oxide superconducting layer 30 formed on the intermediate layer 20. This is because it becomes.
- FIG. 3 is a flowchart showing a method for manufacturing the oxide superconducting wire according to the embodiment.
- a substrate preparation step (S10) is first performed. Specifically, referring to FIG. 4, an alignment metal substrate 10 is prepared.
- the oriented metal substrate 10 is a clad substrate using a non-oriented and non-magnetic metal such as SUS as a substrate, the bonding of the substrate and the oriented metal layer is performed by a method such as rolling.
- an intermediate layer forming step (S20 in FIG. 3) for forming the intermediate layer 20 on the oriented metal substrate 10 is performed. Specifically, referring to FIG. 5, intermediate layer 20 is formed on the main surface of oriented metal substrate 10.
- a method for forming the intermediate layer 20 for example, a vapor phase method such as a sputtering method can be used, but an organic metal coating thermal decomposition (MOD) method may also be used.
- MOD organic metal coating thermal decomposition
- a superconducting layer forming step (S30 in FIG. 3) for forming the oxide superconducting layer 30 on the intermediate layer 20 is performed.
- an RE123-based oxide superconductor is formed on the main surface opposite to the main surface facing the oriented metal substrate 10 of the intermediate layer 20 (the main surface on the upper side in FIG. 6).
- An oxide superconducting layer 30 is formed.
- any film forming method can be used.
- the oxide superconducting layer 30 is formed by a vapor phase method, a liquid phase method, or a combination thereof.
- Examples of the vapor phase method include a pulsed laser deposition (PLD) method, a sputtering method, and an electron beam deposition method.
- Examples of the liquid phase method include a MOD method. When performed by at least one of a laser vapor deposition method, a sputtering method, an electron beam method, and a MOD method, the oxide superconducting layer 30 having a surface excellent in orientation and surface smoothness can be formed.
- a protective layer forming step (S40 in FIG. 3) for forming the protective layer 40 on the oxide superconducting layer 30 is performed.
- the oxide superconducting layer 30 is made of Ag or an Ag alloy on the main surface opposite to the main surface facing the intermediate layer 20 (upper main surface in FIG. 7).
- the protective layer 40 is formed by physical vapor deposition such as sputtering or electroplating. By forming the protective layer 40, the surface of the oxide superconducting layer 30 can be protected.
- oxygen annealing is performed by heat treatment in an oxygen atmosphere (oxygen introduction step), and oxygen is introduced into the oxide superconducting layer 30.
- a stabilization layer forming step for forming the stabilization layer 50 around the laminate is performed.
- the stabilization layer 50 made of Cu or a Cu alloy is formed by a known plating method so as to cover the outer periphery of the stacked body, that is, to cover almost the entire outermost surface of the stacked body.
- As a method of forming the stabilization layer 50 there is a method of bonding a copper foil in addition to the plating method. By performing the above steps, the oxide superconducting wire 1 shown in FIG. 1 is manufactured.
- the oxide superconducting wire 1 shown in FIG. 8 has basically the same configuration as that of the oxide superconducting wire 1 shown in FIG. 1, but the configuration of the oriented metal substrate 10 is the oxide superconducting wire shown in FIG. It is different from 1.
- the oriented metal substrate 10 includes the oxide layer 11 at the uppermost portion in contact with the intermediate layer 20.
- the oxide layer 11 is a NiO (nickel oxide) layer.
- the thickness of the oxide layer 11 is about 10 to 200 nm.
- the oxide layer 11 can also be generated by heat treatment in an oxygen atmosphere in the superconducting layer forming step (S30 in FIG. 3).
- the intermediate layer 20 and the oxide superconducting layer 30 made of a single-layer thin film can be formed on the oriented metal substrate 10 with good orientation. As a result, the same effect as that of the oxide superconducting wire 1 shown in FIG. 1 can be obtained.
- sample In order to investigate the influence of the orientation of the oriented metal substrate 10 on the oxide superconducting wire, the following samples were prepared. That is, a sample in which a single-layer intermediate layer having a thickness of 5 to 300 nm is formed on an oriented metal substrate having an in-plane orientation ⁇ of 5 to 8 °, and an oxide superconducting layer is formed on the intermediate layer ( Samples No. 1 to No. 13) were prepared.
- a clad substrate (sample No. 1 to No. 11) having a laminated structure of Ni / Cu / SUS and a Ni—W alloy substrate (sample No. 12, No. 13) were used.
- the in-plane orientation ⁇ was measured by performing X-ray diffraction analysis ( ⁇ scan) on the oriented metal substrate.
- ⁇ scan X-ray diffraction analysis
- the intermediate layer a Y 2 O 3 layer having a thickness of 5 to 300 nm was formed on the oriented metal substrate by sputtering.
- a GdBCO layer having a thickness of 2500 nm was formed on the intermediate layer by using the PLD method.
- sample no. 1-No. 3 no. Compare 7 Sample No. with ⁇ of the oriented metal substrate larger than 7 ° 3 shows a decrease in Ic.
- Sample No. 1 and no. 2 indicates that Ic and Tc are high and preferable. However, even if the ⁇ of the oriented metal substrate is 7 ° or less, the sample No. In No. 7, Tc was high, but Ic was slightly low.
- Sample No. 2 in which ⁇ of the oriented metal substrate is smaller than 7 ° and the film thickness of the intermediate layer is thin. 4 no. 5, no. 12 was compared, Ic decreased due to a decrease in Tc when the film thickness was 5 nm (sample No. 4), but high Ic and Tc were obtained when the film thickness was 10 nm (samples No. 5 and No. 12). .
- the sample No. of ⁇ of the oriented metal substrate is smaller than 7 °. 1, no. 2, No. 5, no. 8-No. 13 is compared with the sample No. 6 in which ⁇ of the oriented metal substrate is smaller than 6 °. 1, no. 8-No. 11 shows that Ic is high and more preferable.
- the sample No. of ⁇ of this oriented metal substrate is smaller than 6 °. 1, no. 8-No. 11 shows that even if the thickness of the intermediate layer is reduced from 1000 nm to 150 nm, high Ic is maintained.
- Sample No. No. 2 with ⁇ of the oriented metal substrate smaller than 7 ° and the same film thickness of the intermediate layer. 5 and no. 12 is a sample No. 1 in which the oriented metal substrate is a clad substrate.
- the alignment metal substrate is a Ni—W alloy substrate. It can be seen that Ic is higher than 12, which is more preferable. Sample No. 8 and no. The same can be said for the 13 comparisons. Therefore, it can be said that a clad substrate is more preferable for improving Ic.
- the in-plane orientation ⁇ of the oriented metal substrate is 7 ° or less, an oxide superconducting layer having good orientation can be formed even by an intermediate layer made of a single thin film. More preferably, the film thickness of the intermediate layer is 10 nm or more, and the in-plane orientation ⁇ of the intermediate layer is 8 ° or less. More preferably, ⁇ of the oriented metal substrate may be 6 ° or less. More preferably, a clad substrate may be used as the oriented metal substrate. This makes it possible to obtain an oxide superconducting wire with reduced manufacturing costs while maintaining excellent superconducting properties. As a result, the effect of improving mass productivity can be exhibited.
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Abstract
Description
本出願は、2015年10月15日出願の日本出願第2015-203745号に基づく優先権を主張し、前記日本出願に記載された全ての記載内容を援用するものである。
特許文献1に記載の酸化物超電導線材によれば、配向金属基板と酸化物超電導層との間に中間層を介在させることにより、酸化物超電導層の配向性の向上が可能となる。ここで、配向性とは結晶粒の結晶方位が揃っている程度をいう。また、基板と酸化物超電導層との間の元素の拡散および反応を抑制することができる。その結果、高い臨界電流密度(Jc)および高い臨界電流(Ic)などの優れた特性を得ることができる。
本開示によれば、優れた超電導特性を保ちつつ、製造コストが低減された酸化物超電導線材を実現することができる。
最初に本発明の実施態様を列記して説明する。
以下、図面に基づいて本発明の実施形態を説明する。なお、以下の図面において同一または相当する部分には同一の参照番号を付しその説明は繰返さない。
図1は、実施形態に係る酸化物超電導線材の構成を示す概略断面図である。図1は、実施形態に係る酸化物超電導線材1が延在する方向に交差する方向に切断した断面を示している。このため、紙面に交差する方向が酸化物超電導線材1の長手方向であり、酸化物超電導層30の超電導電流が断面に交差する方向に沿って流れるものとする。また、図1および以降の断面模式図においては、図を見やすくするために矩形状の断面における上下方向(以下、「厚み方向」とも称する)と左右方向(以下、「幅方向」とも称する)との長さの差を小さくしているが、実際は当該断面の厚み方向の長さは幅方向の長さに比べて十分に小さい。
次に、図3~図7を参照して、実施形態に係る酸化物超電導線材の製造方法を説明する。図3は、実施形態に係る酸化物超電導線材の製造方法を示すフローチャートである。
(試料)
酸化物超電導線材に対する、配向金属基板10の配向性の影響を調査するべく、以下のような試料を準備した。すなわち、面内配向性Δφが5~8°である配向金属基板上に厚みが5~300nmである単層の中間層が形成され、当該中間層上に酸化物超電導層が形成された試料(試料No.1~No.13)を準備した。
上記試料No.1~No.13のそれぞれについて、超電導特性(Ic)を、液体窒素温度(77.3K)、自己磁場下において測定した。また、超電導転移温度TcをTHEVA社製CryoScan装置を用いて誘導法により測定した。結果を表1に示す。
Claims (5)
- 配向金属基板と、
前記配向金属基板上に形成された中間層と、
前記中間層上に形成された酸化物超電導層とを備え、
前記配向金属基板の面内配向性(Δφ)は7°以下であり、かつ、
前記中間層は単一の層から構成される、酸化物超電導線材。 - 前記配向金属基板は、クラッド基板である、請求項1に記載の酸化物超電導線材。
- 前記中間層の厚みは10nm以上である、請求項1または請求項2に記載の酸化物超電導線材。
- 前記中間層の面内配向性は8°以下である、請求項1から請求項3のいずれか1項に記載の酸化物超電導線材。
- 前記配向金属基板は、前記中間層と接する最上部に酸化物層を含む、請求項1から請求項4のいずれか1項に記載の酸化物超電導線材。
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