WO2017054271A1 - 低温多晶硅tft基板 - Google Patents

低温多晶硅tft基板 Download PDF

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WO2017054271A1
WO2017054271A1 PCT/CN2015/092792 CN2015092792W WO2017054271A1 WO 2017054271 A1 WO2017054271 A1 WO 2017054271A1 CN 2015092792 W CN2015092792 W CN 2015092792W WO 2017054271 A1 WO2017054271 A1 WO 2017054271A1
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layer
disposed
insulating layer
drain
temperature polysilicon
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French (fr)
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许勇
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Wuhan China Star Optoelectronics Technology Co Ltd
TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US14/888,451 priority Critical patent/US9869912B2/en
Publication of WO2017054271A1 publication Critical patent/WO2017054271A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G02F1/13685—Top gates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a low temperature polysilicon TFT substrate.
  • LTPS Low Temperature Poly-silicon
  • TFT Thin Film Transistor
  • AMLCD Active Matrix Liquid Crystal Display
  • AMOLED Active-Matrix Organic Light Emitting Diode
  • LTPS TFT Compared with amorphous silicon (a-Si) technology, LTPS TFT has high mobility and good device stability.
  • the mobility of LTPS TFTs can reach tens to hundreds of cm 2 /Vs, which can meet the requirements of high-resolution AMLCD and AMOLED displays. Therefore, the low-temperature polysilicon display has a faster reaction speed and has advantages of high brightness, high resolution, and low power consumption.
  • LTPS TFTs can also be used to build peripheral driver circuits for on-chip integrated systems.
  • a Shielding Metal is generally required to shield the TFT device before shading.
  • FIG. 1 is a cross-sectional structural diagram of a conventional low temperature polysilicon TFT substrate.
  • the light-shielding metal layer 200 is formed on the substrate 100, and then the TFT device 300 is fabricated.
  • the light-shielding metal layer 200 can shield the region where the TFT device 300 is located, thereby avoiding polysilicon in the TFT device 300.
  • Layer 400 is affected by illumination, ensuring stability of TFT device 300.
  • a mask is required in the process, which increases the process, reduces production efficiency, and also increases production costs.
  • the present invention provides a low temperature polysilicon TFT substrate, including a substrate, a first buffer layer disposed on the substrate, and a black matrix disposed on the first buffer layer. a first buffer layer and a second buffer layer on the black matrix, a polysilicon layer disposed on the second buffer layer, a gate insulating layer disposed on the polysilicon layer, and the gate insulating layer a gate electrode, an interlayer insulating layer disposed on the gate insulating layer and the gate, a source and a drain provided on the interlayer insulating layer, and an interlayer insulating layer and a source And a flat layer on the drain, a common electrode disposed on the flat layer, a passivation layer disposed on the common electrode, and a pixel electrode disposed on the passivation layer;
  • the source, drain, gate, and polysilicon layers constitute a TFT device, and the black matrix covers a region where the TFT device is located to prevent the TFT device from being affected by illumination.
  • the polysilicon layer includes a channel region in the middle, an N-type heavily doped region at both ends, and an N-type lightly doped region between the channel region and the N-type heavily doped region.
  • a first via hole is formed on the gate insulating layer and the interlayer insulating layer corresponding to the N-type heavily doped region, and the source and the drain respectively pass through the first via and the N The heavily doped regions are in contact.
  • a second via hole is formed on the flat layer corresponding to the drain, the passivation layer covers the second via hole, and the passivation layer is formed on a portion of the bottom portion of the second via hole.
  • a third via the pixel electrode being in contact with the drain via the third via.
  • a storage capacitor is formed between the common electrode and the pixel electrode.
  • the substrate is a glass substrate; the first buffer layer is a silicon oxide layer; and the second buffer layer is a silicon nitride layer.
  • the material of the polysilicon layer is low temperature polysilicon; the gate insulating layer is a silicon nitride layer, a silicon oxide layer, or a composite layer of the two.
  • the material of the gate, the source and the drain is a stack combination of one or more of molybdenum, titanium, aluminum, and copper.
  • the interlayer insulating layer is a silicon nitride layer, a silicon oxide layer, or a composite layer of the two.
  • the material of the common electrode and the pixel electrode is ITO.
  • the present invention also provides a low temperature polysilicon TFT substrate, comprising: a substrate, a first buffer layer disposed on the substrate, a black matrix disposed on the first buffer layer, and the first buffer layer and the black matrix a second buffer layer, a polysilicon layer disposed on the second buffer layer, a gate insulating layer disposed on the polysilicon layer, a gate disposed on the gate insulating layer, and a gate insulating layer and an interlayer insulating layer on the gate, a source and a drain provided on the interlayer insulating layer, a flat layer provided on the interlayer insulating layer, a source, and a drain, a common electrode disposed on the flat layer, a passivation layer disposed on the common electrode, and a pixel electrode disposed on the passivation layer;
  • the source, the drain, the gate, and the polysilicon layer constitute a TFT device, and the black matrix covers a region where the TFT device is located to prevent the TFT device from being affected by illumination;
  • the polysilicon layer includes a channel region in the middle, an N-type heavily doped region at both ends, and an N-type lightly doped region between the channel region and the N-type heavily doped region;
  • a second via is formed on the flat layer corresponding to the drain, the passivation layer covers the second via, and the passivation layer is located on a portion of the bottom of the second via Forming a third via hole, the pixel electrode being in contact with the drain via the third via hole;
  • a storage capacitor is formed between the common electrode and the pixel electrode
  • the substrate is a glass substrate;
  • the first buffer layer is a silicon oxide layer; and the second buffer layer is a silicon nitride layer;
  • the material of the polysilicon layer is low temperature polysilicon; the gate insulating layer is a silicon nitride layer, a silicon oxide layer, or a composite layer of the two.
  • the present invention provides a low-temperature polysilicon TFT substrate.
  • the black matrix is located on the first buffer layer of the low-temperature polysilicon TFT substrate, and the TFT device is located in a region covered by the black matrix, thereby preventing the TFT device from being affected by illumination and ensuring the TFT.
  • the metal layer achieves a double effect by shielding the TFT device from light.
  • FIG. 1 is a schematic cross-sectional structural view of a conventional low temperature polysilicon TFT substrate
  • FIG. 2 is a schematic cross-sectional view showing a low temperature polysilicon TFT substrate of the present invention.
  • the present invention provides a low temperature polysilicon TFT substrate, comprising a substrate 1, a first buffer layer 31 disposed on the substrate 1, and a black matrix 2 disposed on the first buffer layer 31. a first buffer layer 31 and a second buffer layer 32 on the black matrix 2, a polysilicon layer 4 disposed on the second buffer layer 32, and a gate insulating layer 5 disposed on the polysilicon layer 4. a gate electrode 6 on the gate insulating layer 5, an interlayer insulating layer 7 provided on the gate insulating layer 5 and the gate electrode 6, and a source 81 provided on the interlayer insulating layer 7 a drain 82 disposed on the interlayer insulating layer 7.
  • the source 81, the drain 82, the gate 6, and the polysilicon layer 4 constitute a TFT device 10, and the black matrix 2 covers the region where the TFT device 10 is located, thereby preventing the TFT device 10 from being affected by light, ensuring The stability of the TFT device 10.
  • the black matrix 2 can realize the self-acting function (blocking the light leakage of the pixel), and can also realize the double shielding of the TFT device 10 instead of the light-shielding metal layer in the prior art, and saves a light-shielding metal layer. Process, reduce a mask, saving production costs.
  • the polysilicon layer 4 includes a channel region 41 in the middle, an N-type heavily doped region 42 at both ends, and an N-type light between the channel region 41 and the N-type heavily doped region 42. Doped region 43.
  • a first via hole 80 is formed on the gate insulating layer 5 and the interlayer insulating layer 7 corresponding to the N-type heavily doped region 42, and the source electrode 81 and the drain electrode 82 respectively pass through The first via 80 is in contact with the N-type heavily doped region 42.
  • a second via hole 90 is formed on the flat layer 9 corresponding to the drain electrode 82, the passivation layer 92 covers the second via hole 90, and the passivation layer 92 is located at the first via hole 90.
  • a third via 95 is formed on a portion of the bottom of the via 90, and the pixel electrode 93 is in contact with the drain 82 via the third via 95.
  • a storage capacitor C st is formed between the common electrode 91 and the pixel electrode 93.
  • the substrate 1 is a glass substrate; the first buffer layer 31 is a silicon oxide (SiO 2 ) layer; and the second buffer layer 32 is a silicon nitride (SiN x ) layer.
  • the material of the polysilicon layer 4 is low temperature polysilicon; the gate insulating layer 5 is a silicon nitride layer, a silicon oxide layer, or a composite layer of the two.
  • the material of the gate 6, the source 81, and the drain 82 is a stack combination of one or more of molybdenum, titanium, aluminum, and copper.
  • the interlayer insulating layer 7 is a silicon nitride layer, a silicon oxide layer, or a composite layer of both.
  • the material of the common electrode 91 and the pixel electrode 93 is ITO (indium tin oxide).
  • the present invention provides a low temperature polysilicon TFT substrate, the black matrix is located on the first buffer layer of the low temperature polysilicon TFT substrate, and the TFT device is located in a region covered by the black matrix, thereby avoiding the influence of the TFT device on the illumination, and ensuring the TFT device. Stability; and eliminating the need for a masking metal layer process, reducing a mask, saving production costs, enabling the black matrix to replace its own shading metal while achieving its own function (obscuring pixel leakage)
  • the layer realizes the shading of the TFT device and achieves a dual function.

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Abstract

提供一种低温多晶硅TFT基板，其黑色矩阵（2）位于低温多晶硅TFT基板（1）的第一缓冲层（31）上，TFT器件位于被黑色矩阵（2）遮盖的区域，可避免TFT器件受到光照影响，确保TFT器件的稳定性；并且省去了一道遮光金属层的制程，减少一道光罩，节约了生产成本，使得黑色矩阵在实现自身作用（遮挡像素漏光）的同时，还可以代替现有技术中的遮光金属层实现对TFT器件的遮光，实现了双重作用。

Description

低温多晶硅TFT基板 技术领域
本发明涉及显示技术领域，尤其涉及一种低温多晶硅TFT基板。
背景技术
低温多晶硅(Low Temperature Poly-silicon，LTPS)薄膜晶体管(Thin Film Transistor，TFT)在高分辨率有源液晶显示器(Active MatrixLiquid Crystal Display，AMLCD)以及有机发光二极管(Active-Matrix Organic Light Emitting Diode，AMOLED)显示器领域有很大的应用价值和潜力。
与非晶硅(a-Si)技术相比，LTPS TFT的迁移率高，器件稳定性好。LTPS TFT的迁移率可达几十至几百cm2/Vs，可以满足高分辨率AMLCD及AMOLED显示器的要求。因此，低温多晶硅显示器的反应速度较快，且有高亮度、高解析度与低耗电量等优点。除了作为像素开关，LTPS TFT还可以构建周边驱动电路，实现片上集成系统。
但是多晶硅受光照影响会造成器件不稳定，漏电流增大，造成面板显示不正常，因此一般在制作TFT器件之前要制作一道遮光金属层(Shielding Metal)进行遮光。
请参阅图1，为一种现有的低温多晶硅TFT基板的剖面结构示意图。在制作TFT器件300之前，先在基板100上制作遮光金属层200，然后制作TFT器件300，所述遮光金属层200可以实现对TFT器件300所在的区域进行遮光，避免了TFT器件300中的多晶硅层400受到光照影响，保证了TFT器件300的稳定性。
但是，单独制作一道遮光金属层200就意味着需要在制程中多使用一道光罩，这样既增加了制程，降低了生产效率，同时也造成了生产成本的提升。
发明内容
本发明的目的在于提供一种低温多晶硅TFT基板，采用黑色矩代替遮光金属层对TFT器件进行遮盖，保证TFT器件的性能稳定，同时节约了生产成本。
为实现上述目的，本发明提供一种低温多晶硅TFT基板，包括基板、设于所述基板上的第一缓冲层、设于所述第一缓冲层上的黑色矩阵、设于 所述第一缓冲层与黑色矩阵上的第二缓冲层、设于所述第二缓冲层上的多晶硅层、设于所述多晶硅层上的栅极绝缘层、设于所述栅极绝缘层上的栅极、设于所述栅极绝缘层与栅极上的层间绝缘层、设于所述层间绝缘层上的源极与漏极、设于所述层间绝缘层、源极、及漏极上的平坦层、设于所述平坦层上的公共电极、设于所述公共电极上的钝化层、及设于所述钝化层上的像素电极；
其中，所述源极、漏极、栅极、及多晶硅层构成一TFT器件，所述黑色矩阵遮盖所述TFT器件所在的区域，避免TFT器件受光照影响。
所述多晶硅层包括位于中间的沟道区、位于两端的N型重掺杂区、及位于所述沟道区与N型重掺杂区之间的N型轻掺杂区。
所述栅极绝缘层、及层间绝缘层上对应所述N型重掺杂区的上方形成有第一过孔，所述源极与漏极分别经由所述第一过孔与所述N型重掺杂区相接触。
所述平坦层上对应所述漏极的上方形成有第二过孔，所述钝化层包覆该第二过孔，并且所述钝化层位于该第二过孔底部的部分上形成有第三过孔，所述像素电极经由所述第三过孔与所述漏极相接触。
所述公共电极与像素电极之间形成存储电容。
所述基板为玻璃基板；所述第一缓冲层为氧化硅层；所述第二缓冲层为氮化硅层。
所述多晶硅层的材料为低温多晶硅；所述栅极绝缘层为氮化硅层、氧化硅层、或二者的复合层。
所述栅极、源极、漏极的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
所述层间绝缘层为氮化硅层、氧化硅层、或二者的复合层。
所述公共电极、及像素电极的材料均为ITO。
本发明还提供一种低温多晶硅TFT基板，包括基板、设于所述基板上的第一缓冲层、设于所述第一缓冲层上的黑色矩阵、设于所述第一缓冲层与黑色矩阵上的第二缓冲层、设于所述第二缓冲层上的多晶硅层、设于所述多晶硅层上的栅极绝缘层、设于所述栅极绝缘层上的栅极、设于所述栅极绝缘层与栅极上的层间绝缘层、设于所述层间绝缘层上的源极与漏极、设于所述层间绝缘层、源极、及漏极上的平坦层、设于所述平坦层上的公共电极、设于所述公共电极上的钝化层、及设于所述钝化层上的像素电极；
其中，所述源极、漏极、栅极、及多晶硅层构成一TFT器件，所述黑色矩阵遮盖所述TFT器件所在的区域，避免TFT器件受光照影响；
其中，所述多晶硅层包括位于中间的沟道区、位于两端的N型重掺杂区、及位于所述沟道区与N型重掺杂区之间的N型轻掺杂区；
其中，所述平坦层上对应所述漏极的上方形成有第二过孔，所述钝化层包覆该第二过孔，并且所述钝化层位于该第二过孔底部的部分上形成有第三过孔，所述像素电极经由所述第三过孔与所述漏极相接触；
其中，所述公共电极与像素电极之间形成存储电容；
其中，所述基板为玻璃基板；所述第一缓冲层为氧化硅层；所述第二缓冲层为氮化硅层；
其中，所述多晶硅层的材料为低温多晶硅；所述栅极绝缘层为氮化硅层、氧化硅层、或二者的复合层。
本发明的有益效果：本发明提供一种低温多晶硅TFT基板，黑色矩阵位于低温多晶硅TFT基板的第一缓冲层上，TFT器件位于被黑色矩阵遮盖的区域，可避免TFT器件受到光照影响，确保TFT器件的稳定性；并且省去了一道遮光金属层的制程，减少一道光罩，节约了生产成本，使得黑色矩阵在实现自身作用(遮挡像素漏光)的同时，还可代替现有技术中的遮光金属层实现对TFT器件的遮光，实现了双重作用。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为一种现有的低温多晶硅TFT基板的剖面结构示意图；
图2为本发明的低温多晶硅TFT基板的剖面结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2，本发明提供一种低温多晶硅TFT基板，包括基板1、设于所述基板1上的第一缓冲层31、设于所述第一缓冲层31上的黑色矩阵2、设于所述第一缓冲层31与黑色矩阵2上的第二缓冲层32、设于所述第二缓冲层32上的多晶硅层4、设于所述多晶硅层4上的栅极绝缘层5、设于所述栅极绝缘层5上的栅极6、设于所述栅极绝缘层5与栅极6上的层间绝缘层7、设于所述层间绝缘层7上的源极81与漏极82、设于所述层间绝缘层 7、源极81、及漏极82上的平坦层9、设于所述平坦层9上的公共电极91、设于所述公共电极91上的钝化层92、及设于所述钝化层92上的像素电极93；
其中，所述源极81、漏极82、栅极6、及多晶硅层4构成一TFT器件10，所述黑色矩阵2遮盖所述TFT器件10所在的区域，避免TFT器件10受光照影响，确保TFT器件10的稳定性。所述黑色矩阵2在实现自身作用(遮挡像素漏光)的同时，还可代替现有技术中的遮光金属层实现对TFT器件10的遮光，实现了双重作用，并且省去了一道遮光金属层的制程，减少一道光罩，节约了生产成本。
具体的，所述多晶硅层4包括位于中间的沟道区41、位于两端的N型重掺杂区42、及位于所述沟道区41与N型重掺杂区42之间的N型轻掺杂区43。
具体的，所述栅极绝缘层5、及层间绝缘层7上对应所述N型重掺杂区42的上方形成有第一过孔80，所述源极81与漏极82分别经由所述第一过孔80与所述N型重掺杂区42相接触。
具体的，所述平坦层9上对应所述漏极82的上方形成有第二过孔90，所述钝化层92包覆该第二过孔90，并且所述钝化层92位于该第二过孔90底部的部分上形成有第三过孔95，所述像素电极93经由所述第三过孔95与所述漏极82相接触。
具体的，所述公共电极91与像素电极93之间形成存储电容Cst。
优选的，所述基板1为玻璃基板；所述第一缓冲层31为氧化硅(SiO2)层；所述第二缓冲层32为氮化硅(SiNx)层。
所述多晶硅层4的材料为低温多晶硅；所述栅极绝缘层5为氮化硅层、氧化硅层、或二者的复合层。
所述栅极6、源极81、漏极82的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
所述层间绝缘层7为氮化硅层、氧化硅层、或二者的复合层。
所述公共电极91、及像素电极93的材料均为ITO(氧化铟锡)。
综上所述，本发明提供一种低温多晶硅TFT基板，黑色矩阵位于低温多晶硅TFT基板的第一缓冲层上，TFT器件位于被黑色矩阵遮盖的区域，可避免TFT器件受到光照影响，确保TFT器件的稳定性；并且省去了一道遮光金属层的制程，减少一道光罩，节约了生产成本，使得黑色矩阵在实现自身作用(遮挡像素漏光)的同时，还可代替现有技术中的遮光金属层实现对TFT器件的遮光，实现了双重作用。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (15)

  1. 一种低温多晶硅TFT基板，包括基板、设于所述基板上的第一缓冲层、设于所述第一缓冲层上的黑色矩阵、设于所述第一缓冲层与黑色矩阵上的第二缓冲层、设于所述第二缓冲层上的多晶硅层、设于所述多晶硅层上的栅极绝缘层、设于所述栅极绝缘层上的栅极、设于所述栅极绝缘层与栅极上的层间绝缘层、设于所述层间绝缘层上的源极与漏极、设于所述层间绝缘层、源极、及漏极上的平坦层、设于所述平坦层上的公共电极、设于所述公共电极上的钝化层、及设于所述钝化层上的像素电极；
    其中，所述源极、漏极、栅极、及多晶硅层构成一TFT器件，所述黑色矩阵遮盖所述TFT器件所在的区域，避免TFT器件受光照影响。
  2. 如权利要求1所述的低温多晶硅TFT基板，其中，所述多晶硅层包括位于中间的沟道区、位于两端的N型重掺杂区、及位于所述沟道区与N型重掺杂区之间的N型轻掺杂区。
  3. 如权利要求2所述的低温多晶硅TFT基板，其中，所述栅极绝缘层、及层间绝缘层上对应所述N型重掺杂区的上方形成有第一过孔，所述源极与漏极分别经由所述第一过孔与所述N型重掺杂区相接触。
  4. 如权利要求1所述的低温多晶硅TFT基板，其中，所述平坦层上对应所述漏极的上方形成有第二过孔，所述钝化层包覆该第二过孔，并且所述钝化层位于该第二过孔底部的部分上形成有第三过孔，所述像素电极经由所述第三过孔与所述漏极相接触。
  5. 如权利要求1所述的低温多晶硅TFT基板，其中，所述公共电极与像素电极之间形成存储电容。
  6. 如权利要求1所述的低温多晶硅TFT基板，其中，所述基板为玻璃基板；所述第一缓冲层为氧化硅层；所述第二缓冲层为氮化硅层。
  7. 如权利要求1所述的低温多晶硅TFT基板，其中，所述多晶硅层的材料为低温多晶硅；所述栅极绝缘层为氮化硅层、氧化硅层、或二者的复合层。
  8. 如权利要求1所述的低温多晶硅TFT基板，其中，所述栅极、源极、漏极的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
  9. 如权利要求1所述的低温多晶硅TFT基板，其中，所述层间绝缘层为氮化硅层、氧化硅层、或二者的复合层。
  10. 如权利要求1所述的低温多晶硅TFT基板，其中，所述公共电极、 及像素电极的材料均为ITO。
  11. 一种低温多晶硅TFT基板，包括基板、设于所述基板上的第一缓冲层、设于所述第一缓冲层上的黑色矩阵、设于所述第一缓冲层与黑色矩阵上的第二缓冲层、设于所述第二缓冲层上的多晶硅层、设于所述多晶硅层上的栅极绝缘层、设于所述栅极绝缘层上的栅极、设于所述栅极绝缘层与栅极上的层间绝缘层、设于所述层间绝缘层上的源极与漏极、设于所述层间绝缘层、源极、及漏极上的平坦层、设于所述平坦层上的公共电极、设于所述公共电极上的钝化层、及设于所述钝化层上的像素电极；
    其中，所述源极、漏极、栅极、及多晶硅层构成一TFT器件，所述黑色矩阵遮盖所述TFT器件所在的区域，避免TFT器件受光照影响；
    其中，所述多晶硅层包括位于中间的沟道区、位于两端的N型重掺杂区、及位于所述沟道区与N型重掺杂区之间的N型轻掺杂区；
    其中，所述平坦层上对应所述漏极的上方形成有第二过孔，所述钝化层包覆该第二过孔，并且所述钝化层位于该第二过孔底部的部分上形成有第三过孔，所述像素电极经由所述第三过孔与所述漏极相接触；
    其中，所述公共电极与像素电极之间形成存储电容；
    其中，所述基板为玻璃基板；所述第一缓冲层为氧化硅层；所述第二缓冲层为氮化硅层；
    其中，所述多晶硅层的材料为低温多晶硅；所述栅极绝缘层为氮化硅层、氧化硅层、或二者的复合层。
  12. 如权利要求11所述的低温多晶硅TFT基板，其中，所述栅极绝缘层、及层间绝缘层上对应所述N型重掺杂区的上方形成有第一过孔，所述源极与漏极分别经由所述第一过孔与所述N型重掺杂区相接触。
  13. 如权利要求11所述的低温多晶硅TFT基板，其中，所述栅极、源极、漏极的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
  14. 如权利要求11所述的低温多晶硅TFT基板，其中，所述层间绝缘层为氮化硅层、氧化硅层、或二者的复合层。
  15. 如权利要求11所述的低温多晶硅TFT基板，其中，所述公共电极、及像素电极的材料均为ITO。
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