WO2017045343A1 - 显示面板及其制备方法、显示装置及其健康监测方法 - Google Patents

显示面板及其制备方法、显示装置及其健康监测方法 Download PDF

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Publication number
WO2017045343A1
WO2017045343A1 PCT/CN2016/073285 CN2016073285W WO2017045343A1 WO 2017045343 A1 WO2017045343 A1 WO 2017045343A1 CN 2016073285 W CN2016073285 W CN 2016073285W WO 2017045343 A1 WO2017045343 A1 WO 2017045343A1
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Prior art keywords
layer
display panel
disposed
acoustic wave
silicon
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PCT/CN2016/073285
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English (en)
French (fr)
Inventor
杨久霞
邱云
王志东
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京东方科技集团股份有限公司
北京京东方光电科技有限公司
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Priority to US15/519,898 priority Critical patent/US9961427B2/en
Publication of WO2017045343A1 publication Critical patent/WO2017045343A1/zh

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
    • H04R1/028—Casings; Cabinets ; Supports therefor; Mountings therein associated with devices performing functions other than acoustics, e.g. electric candles
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
    • G01H3/00—Measuring characteristics of vibrations by using a detector in a fluid
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
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    • G09F9/35—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being liquid crystals
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
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    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • H—ELECTRICITY
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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    • H01L29/772—Field effect transistors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H03G3/3005—Automatic control in amplifiers having semiconductor devices in amplifiers suitable for low-frequencies, e.g. audio amplifiers
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Definitions

  • Embodiments of the present disclosure relate to a display panel, a method of fabricating the same, a display device, and a health monitoring method thereof.
  • the existing display devices such as mobile phones, iPADs, etc., their voice execution functions are realized by the microphone chip on the main board, and the microphone is completed by the MEMS process, so that the production process of the entire display device is complicated, which affects the display device.
  • Productivity For example, the existing concentrated acoustic wave sensor needs to be mounted on the main board, which may reduce the production efficiency of the display device, and is inconvenient for the thinning development of the display device.
  • Embodiments of the present disclosure provide a display panel, a method for fabricating the same, a display device, and a health monitoring method thereof for improving the production efficiency of the display device and facilitating the thinning development of the display device.
  • Embodiments of the present disclosure provide a display panel including a base substrate and an acoustic wave sensor disposed on the base substrate.
  • the acoustic wave sensor is used to monitor sound waves.
  • the acoustic wave sensor includes: a first electrode layer disposed on the base substrate; a silicon back plate disposed on the first electrode layer; a support layer disposed on the silicon back plate; a first film layer on the support layer; a second electrode layer disposed on the first film layer; and a second film layer disposed on the second electrode layer.
  • the first film layer and the second film layer are Mylar film layers, and the first electrode layer, the silicon back plate, the support layer and the first film layer are provided with communication. Sound hole.
  • the display panel further includes a thin film transistor disposed on the base substrate, the thin film transistor including a gate layer, a gate insulating layer, a polysilicon active layer, and a source/drain electrode layer, the thin film transistor being located on the base substrate
  • the upper occlusion metal layer is electrically isolated from the occlusion metal layer by an insulating layer.
  • the first electrode layer of the acoustic wave sensor is disposed in the same layer as the shielding metal layer; the silicon back plate of the acoustic wave sensor is disposed in the same layer as the polysilicon active layer in the thin film transistor; the support of the acoustic wave sensor a layer is disposed in the same layer as a gate insulating layer of the thin film transistor; the acoustic wave sensing
  • the second electrode layer of the device is disposed in the same layer as the gate layer of the thin film transistor.
  • the material of the support layer is silicon dioxide or silicon nitride.
  • the first film layer and the second film layer each include a first silicon nitride layer, a polysilicon layer disposed on the first silicon nitride layer, and a second nitridation layer disposed on the polysilicon layer Silicon layer.
  • the base substrate, the first electrode layer, the silicon back plate, the support layer, and the first film layer are each provided with a through hole at the same position, and the substrate is located on the base substrate.
  • the through holes of the first electrode layer, the silicon backing plate, the supporting layer and the first film layer communicate to form an acoustic hole.
  • the display panel is a liquid crystal display panel
  • the liquid crystal display panel further includes a first barrier layer, a first passivation layer, a second barrier layer, a first transparent conductive layer, and a second blunt layer over the second film layer. a layer and a second transparent electrode layer.
  • the display panel further includes a thin film transistor disposed on the base substrate, the thin film transistor including a gate layer, a gate insulating layer, an amorphous silicon active layer, and a source/drain electrode layer.
  • the first electrode layer of the acoustic wave sensor is disposed in the same layer as the gate layer of the thin film transistor;
  • the silicon back plate of the acoustic wave sensor is disposed in the same layer as the amorphous silicon active layer in the thin film transistor;
  • the second electrode layer of the acoustic wave sensor is disposed in the same layer as the source/drain electrode layer of the thin film transistor.
  • the first film layer and the second film layer each include a first silicon nitride layer, an amorphous silicon layer disposed on the first silicon nitride layer, and a layer disposed on the amorphous silicon layer A second silicon nitride layer.
  • the base substrate, the first electrode layer, the silicon back plate, the support layer, and the first film layer are each provided with a through hole at the same position, and the substrate is located on the base substrate.
  • the through holes of the first electrode layer, the silicon backing plate, the supporting layer and the first film layer communicate to form an acoustic hole.
  • the display panel is a liquid crystal display panel, and the liquid crystal display panel further includes a passivation layer and a transparent conductive layer disposed on the second film layer.
  • the sound hole is a through hole or a horn hole.
  • the display panel is an OLED display panel.
  • An embodiment of the present disclosure further provides a method of fabricating a display panel, the method comprising the steps of: forming a first electrode layer on a substrate; forming a silicon back plate on the first electrode layer; Forming a support layer on the back plate; forming a first film layer on the support layer; forming a through sound hole in the formed first film layer, the first electrode layer, the support layer, and the silicon back plate; Forming a second electrode layer on the first film layer; and forming a second film layer on the second electrode layer.
  • the preparation method further includes: forming an active layer of the thin film transistor by one patterning process when forming the silicon back sheet; and using a patterning process when forming the second electrode layer A gate layer of the thin film transistor is formed.
  • the preparation method further includes: forming a gate layer by one patterning process when forming the first electrode layer; and forming a source and a drain of the thin film transistor by one patterning process when forming the second electrode.
  • the present disclosure also provides a display device comprising the display panel of any of the above.
  • the acoustic wave sensor by forming the structure of the acoustic wave sensor directly on the base substrate, the acoustic wave sensor can be formed while preparing other structures of the display panel, thereby simplifying the process of preparing the display panel and improving the display device.
  • the preparation efficiency is achieved, and at the same time, the acoustic wave sensor is directly formed on the base substrate, which reduces the thickness of the formed display device, and facilitates the thinning development of the display device.
  • the acoustic wave sensor of the display panel is used for health monitoring
  • the display device further includes: an alarm device; and a control device configured to receive a sound amplitude monitored by the acoustic wave sensor of the display panel, and the sound amplitude is The threshold is set for comparison, and when the sound amplitude exceeds the set threshold, the alarm device is controlled to issue an alarm.
  • control device is further configured to control the alarm device to issue an alarm when the sound amplitude is lower than a set threshold, and control the volume device of the display device to increase the volume to a set threshold when the user selects to increase.
  • the present disclosure also provides a health monitoring method for a display device, comprising the following steps:
  • the alarm device When the sound amplitude is lower than a set threshold, the alarm device is controlled to issue an alarm, and when the user selects to increase, the volume device that controls the display device increases the volume to within the set threshold.
  • FIG. 1 is a schematic structural view of an exemplary acoustic wave sensor
  • FIG. 2 is a schematic structural diagram of a display panel according to an embodiment of the present disclosure
  • FIG. 3 is a schematic structural diagram of another display panel according to an embodiment of the present disclosure.
  • FIG. 4 is a flow chart of preparing a display panel according to an embodiment of the present disclosure.
  • FIG. 5 is a second flowchart of a preparation of a display panel according to an embodiment of the present disclosure.
  • FIG. 1 shows a schematic structural view of an exemplary acoustic wave sensor.
  • the acoustic wave sensor includes a lower electrode 1, a silicon back plate 2, an electret 3, a lower Mylar sensitive diaphragm 4, an upper electrode 5, an upper Mylar sensitive diaphragm 6, and an acoustic hole 7.
  • the lower electrode 1 is prepared on the silicon backing plate 2, the lower Mylar sensitive diaphragm 4 and the upper Mylar sensitive diaphragm 6 are disposed on both sides of the upper electrode 5, and the electret 3 spaces the upper electrode 5 and the lower electrode 1
  • the sound hole 7 is disposed on the electret 3, the lower electrode 1, and the silicon back plate 2.
  • embodiments of the present disclosure provide a display panel, a preparation method thereof, a display device, and a health monitoring method thereof.
  • the acoustic wave sensor can be formed when the structure on the display panel is formed, which simplifies the preparation process of the display device and reduces the panel.
  • the thickness is convenient for the thinning development of the display device.
  • FIG. 2 and FIG. 3 are schematic structural diagrams of different display panels provided by embodiments of the present disclosure.
  • Embodiments of the present disclosure provide a display panel including a base substrate 30 and an acoustic wave sensor 20 disposed on the base substrate 30.
  • the acoustic wave sensor 20 is formed while preparing other structures of the display panel, thereby simplifying the process of preparing the display panel, and improving the preparation of the display device. effectiveness.
  • the thickness of the formed display device is reduced, and the thinning of the display device is facilitated.
  • the acoustic wave sensor 20 includes: a first electrode layer 21 disposed on the base substrate 30; a silicon backing plate 22 disposed on the first electrode layer 21; and a support disposed on the silicon backing plate 22 a layer 23; a first film layer 24 disposed on the support layer 23; a second electrode layer 26 disposed on the first film layer 24; and a second film disposed on the second electrode layer 26.
  • Layer 25 the first film layer 24 and the second film layer 25 are Mylar film layers, and the first electrode layer 21, the silicon back plate 22, the support layer 23, and the first film layer 24 are disposed on the first film layer 24. Connected sound holes 27.
  • the display panel provided by the embodiment of the present disclosure includes the thin film transistor 10 and the acoustic wave sensor 20.
  • the thin film transistor 10 may be a top gate structure including a active layer 13, a gate insulating layer 12 disposed on the active layer 13, and a gate layer 11 disposed on the gate insulating layer 12, formed in the gate A spacer 18 on the pole layer 11, and a source 15 and a drain 14 formed on the spacer 18.
  • the thin film transistor 10 in the display panel provided in this embodiment includes a gate layer 11, a gate insulating layer 12, a polysilicon active layer (for example, an active layer 13), and a source/drain electrode layer ( For example, source 15 and drain 14).
  • the thin film transistor 10 is located on the occlusion metal layer 17 on the base substrate and is electrically isolated from the occlusion metal layer 17 by the insulating layer.
  • the first electrode layer 21 of the acoustic wave sensor 20 is disposed in the same layer as the shielding metal layer 17; the silicon backing plate 22 of the acoustic wave sensor 20 is disposed in the same layer as the polysilicon active layer 13 in the thin film transistor 10; the supporting layer 23 of the acoustic wave sensor 20 The second insulating layer 12 of the acoustic wave sensor 20 is disposed in the same layer as the gate insulating layer 12 of the thin film transistor 10.
  • the embodiment of the present disclosure can form the acoustic wave sensor 20 while forming the thin film transistor 10, thereby reducing the process of the acoustic wave sensor 20 at the time of preparation, simplifying the structure of the production display panel and the production steps.
  • the thin film transistor 10 and the acoustic wave sensor 20 are arranged side by side on the base substrate 30, which reduces the thickness of the display panel, and contributes to the thinning development of the display device.
  • the material of the support layer 23 may be silicon dioxide or silicon nitride.
  • the first film layer 24 and the second film layer 25 in the acoustic wave sensor 20 each include a first silicon nitride layer disposed on the first silicon oxide layer, and a second poly crystal disposed on the first silicon nitride layer. a silicon layer, and a second silicon nitride layer disposed on the second polysilicon layer.
  • the base substrate 30, the first electrode layer 21, the silicon back plate 22, the support layer 23, and the first film layer 24 are all provided with through holes at the same position, and are located on the base substrate 30, first.
  • the through holes of the electrode layer 21, the silicon backing plate 22, the support layer 23, and the first film layer 24 communicate to form an acoustic hole.
  • the sound hole 27 is disposed on the silicon back plate 22, the first electrode layer 21, the support layer 23, and the first film layer 24.
  • the specific structure may adopt a structure of a through hole, or may be adopted.
  • the sound hole 27 has a bell-shaped structure including a first through hole 271 formed on the silicon back plate 22, a second through hole 272 formed on the support layer 23, and the first film layer 24
  • the third through hole 273 is formed, and the third through hole 273 has a bell mouth shape.
  • the third through hole 273, the second through hole 272, and the first through hole 271 are penetrated.
  • the first electrode 21 is provided with spaced metal strips, and the support layer 23 is filled between the two metal strips and is in contact with the silicon backing plate 22, and the second through hole 272 and the first through hole 271 are located between the two metal strips. position.
  • the display panel provided by the embodiment of the present disclosure may further include a passivation layer 16 overlying the thin film transistor 10 and the acoustic wave sensor 20.
  • the passivation layer 16 can protect the thin film transistor 10 and the acoustic wave sensor 20.
  • the display panel provided in this embodiment may further include a transparent electrode layer 40 disposed on the passivation layer 16 and connected to the source 15 .
  • the display panel may be a liquid crystal display panel, and the liquid crystal display panel further includes a first barrier layer, a first passivation layer, a second barrier layer, a first transparent conductive layer, and a second passivation layer, which are located above the second film layer.
  • a second transparent electrode layer may be a first barrier layer, a first passivation layer, a second barrier layer, a first transparent conductive layer, and a second passivation layer, which are located above the second film layer.
  • the display panel provided by the embodiment adopts the arrangement structure in which the thin film transistor 10 and the acoustic wave sensor 20 are arranged side by side, thereby simplifying the production process of the display panel, and the acoustic wave sensor 20 can be fabricated when the thin film transistor 10 is prepared.
  • the display panel provided by the embodiment has the thin film transistor 10 and the acoustic wave sensor 20 arranged side by side, thereby reducing the display panel.
  • the thickness is convenient for the thinning development of the display device.
  • the display panel provided in this embodiment includes a thin film transistor 10 and an acoustic wave sensor 20.
  • the thin film transistor 10 is a bottom gate structure, and the structure thereof may include: a gate layer 11, a gate insulating layer 12 disposed on the gate layer 11, and an active layer 13 disposed on the gate insulating layer 12, Source 15 and drain 14 on source layer 13.
  • the thin film transistor 10 includes a gate layer 11, a gate insulating layer 12, an amorphous silicon active layer 13, and source and drain electrode layers (for example, a source 15 and a drain 14).
  • the first electrode layer 21 of the acoustic wave sensor 20 is disposed in the same layer as the gate layer 11 of the thin film transistor 10; the silicon back plate 22 of the acoustic wave sensor 20 and the amorphous silicon in the thin film transistor 10 have The source layer 13 is disposed in the same layer; the second electrode layer 26 of the acoustic wave sensor 20 is disposed in the same layer as the source/drain electrode layer of the thin film transistor 10.
  • the support layer 23 includes a silicide layer disposed in the same layer as the active layer 13 forming the thin film transistor 10 and a silicon oxide layer over the silicide layer; that is, at the time of preparing the active layer 13, on the first electrode layer 21
  • the upper silicide layer serves as a part of the support layer 23, and a silicon oxide layer is provided on the support layer 23; the silicide and silicon oxide layers together serve as the support layer 23.
  • the second electrode layer 26 is disposed in the same layer as the source 15 and the drain 14 of the thin film transistor 10.
  • the first film layer 24 and the second film layer 25 each include a first silicon nitride layer, an amorphous silicon layer disposed on the first silicon nitride layer, and a layer disposed on the amorphous silicon layer.
  • a second silicon nitride layer is another silicon nitride layer.
  • the acoustic wave sensor 20 is prepared synchronously when the thin film transistor 10 is prepared, thereby reducing the process for preparing the display panel and improving the fabrication efficiency of the display panel. Meanwhile, since the thin film transistor 10 and the acoustic wave sensor 20 are arranged side by side, Thereby, the thickness of the display panel is reduced, thereby facilitating the thinning development of the display device.
  • the base substrate 30, the first electrode layer 21, the silicon back plate 22, the support layer 23, and the first film layer 24 are all provided with through holes at the same position, and are located on the base substrate 30 and the first electrode.
  • the through holes of the layer 21, the silicon backing plate 22, the support layer 23, and the first film layer 24 communicate to form sound holes.
  • the sound hole 27 is disposed on the silicon back plate 22, the first electrode layer 21, the support layer 23, and the first film layer 24.
  • the specific structure of the sound hole 27 may adopt a structure of a through hole, or a structure of a bell mouth. .
  • the sound hole 27 adopts a through-hole structure, that is, it comprises a first through hole 271 formed on the silicon back plate 22 and the support layer 23, forming a second through hole 272 on the first film layer 24;
  • the second through hole 272 penetrates through the first through hole 271;
  • the first electrode layer 21 is provided with metal strips spaced apart, and the support layer 23 is filled with two metals The strips are in contact with the silicon backing plate 22, and the second through holes 272 and the first through holes 271 are located between the two metal strips.
  • the display panel provided by the embodiment of the present disclosure further includes a passivation layer 16 overlying the thin film transistor 10 and the acoustic wave sensor 20.
  • the passivation layer 16 can protect the thin film transistor 10 and the acoustic wave sensor 20.
  • the display panel provided by this embodiment further includes a transparent electrode layer 40 disposed on the passivation layer 16 and connected to the source 15 .
  • the display panel provided in this embodiment is a liquid crystal display panel, and the liquid crystal display panel further includes a passivation layer and a transparent conductive layer disposed on the second film layer.
  • the display panel provided in this embodiment is an OLED display panel.
  • an embodiment of the present disclosure further provides a method for preparing a display panel, the method comprising the following steps:
  • a second film layer is formed on the second electrode layer.
  • the acoustic wave sensor is directly prepared on the base substrate, so that the acoustic wave sensor can be formed at the same time as the other structures of the display panel, thereby simplifying the process of preparing the display panel and improving the preparation efficiency of the display device.
  • the acoustic wave sensor is directly formed on the base substrate, which reduces the thickness of the formed display device, and facilitates the thinning development of the display device.
  • the method includes: forming a first electrode layer on a base substrate; forming a silicon back plate on the first electrode layer; forming a support layer on the silicon back plate; forming a first layer on the support layer a film layer; forming a sound hole penetrating through the formed first film layer, the first electrode layer, the support layer, and the silicon back plate; forming a second electrode layer on the first film layer; A second film layer is formed on the electrode layer.
  • the preparation method provided in this embodiment can be used to prepare the display panel provided in the above embodiment 1. As shown in FIG. 4, the preparation method includes:
  • Step 001 forming a first through hole at a fixed position of the glass substrate.
  • Step 002 forming a buffer layer on the glass substrate.
  • Step 003 forming a first electrode layer on the buffer layer.
  • the first electrode layer includes a plurality of spaced apart metal strip electrodes.
  • Step 004 forming a silicon nitride layer on the first electrode layer.
  • the silicon nitride layer can function as an active layer on a thin film transistor and a silicon backplane of an acoustic wave sensor.
  • Step 005 forming a gate insulating layer on the formed silicon nitride layer.
  • the gate insulating layer simultaneously serves as an electret (or support layer) of the acoustic wave sensor while developing a second via hole by photolithography; the gate insulating layer is a first silicon oxide layer.
  • Step 006 forming a first film layer on the gate insulating layer.
  • the first film layer is located above the first electrode; and the first film layer includes: a first silicon nitride layer on the first silicon oxide layer, and a second plurality disposed on the first silicon nitride layer a crystalline silicon layer, and a second silicon nitride layer disposed on the second polysilicon layer.
  • the first film layer may form a third via hole by a lithography process. The first through hole, the second through hole and the third through hole may communicate to form a sound hole.
  • Step 007 forming a gate metal layer on the gate insulating layer, and the gate metal layer simultaneously serves as a second electrode of the sensor.
  • a gate metal layer is formed on the gate insulating layer, and the formed gate metal layer is etched according to the structure of the thin film transistor and the structure of the acoustic wave sensor to form a gate layer and a second electrode.
  • Step 008 forming a second film layer above the first electrode layer.
  • the structure of the second film layer is the same as that of the first film layer, that is, the second film layer may be formed by sandwiching a polysilicon layer between two silicon oxide layers.
  • Step 009 forming an isolation layer on the formed second film layer.
  • Step 010 forming a source and a drain on the formed isolation layer.
  • Step 011 covering the formed source and drain with a passivation layer.
  • the passivation layer covers the thin film transistor and the acoustic wave sensor.
  • Step 012 forming a transparent electrode on the formed passivation layer, and the transparent electrode is connected to the source.
  • the preparation method provided in this embodiment can be used to prepare the display panel provided in Embodiment 2, wherein the display panel adopts a bottom gate structure. As shown in FIG. 5, the method includes:
  • Step 021 forming a through hole at a fixed position of the glass substrate.
  • Step 022 forming a gate metal layer on the base substrate, the gate metal layer simultaneously serving as the first electrode.
  • a gate metal layer is formed on the base substrate, and the formed gate metal layer is etched according to the structure of the thin film transistor and the structure of the acoustic wave sensor to form a gate layer and a second electrode.
  • Step 023 forming an active layer on the gate metal layer.
  • step 023 may include depositing amorphous silicon (a-Si); depositing N-type doped amorphous silicon (n+a-Si) on the formed amorphous silicon (a-Si), and passing through the lithography The process forms an active layer.
  • a-Si amorphous silicon
  • n+a-Si N-type doped amorphous silicon
  • a-Si amorphous silicon
  • Step 024 forming a silicon oxide layer on the formed active layer, and forming a support layer above the first electrode by an etching process.
  • Step 025 forming a first film layer on the formed support layer.
  • the first film layer is formed by sandwiching a layer of polysilicon between two silicon oxide layers.
  • Step 026 forming a source/drain electrode layer, and forming a source, a drain, and a second electrode of the acoustic wave sensor by an etching process.
  • Step 027 forming a second film layer on the formed second electrode layer.
  • the structure of the second film layer is the same as that of the first film layer, that is, the second film layer may be formed by sandwiching a polysilicon layer between the two silicon oxide layers.
  • Step 028 forming a passivation layer on the formed second film layer.
  • Step 028 can also include forming vias in the passivation layer by a lithography process.
  • Step 029 forming a transparent electrode, the transparent electrode is a pixel electrode, and the pixel electrode is connected to the source through the via.
  • the preparation method of the display panel provided by the embodiment of the present disclosure can be seen that the acoustic wave sensor is directly prepared on the base substrate, so that other structures of the display panel are prepared simultaneously.
  • the acoustic wave sensor can be formed, thereby simplifying the process of preparing the display panel and improving the preparation efficiency of the display device.
  • the acoustic wave sensor is directly formed on the base substrate, which reduces the thickness of the formed display device, and facilitates the thinning development of the display device.
  • the embodiment of the present disclosure further provides a display device including the display panel of any of the above.
  • the acoustic wave sensor by forming the structure of the acoustic wave sensor directly on the base substrate, the acoustic wave sensor can be formed while preparing other structures of the display panel, thereby simplifying the preparation of the display.
  • the process of the display panel improves the preparation efficiency of the display device.
  • the acoustic wave sensor is directly formed on the base substrate, which reduces the thickness of the formed display device, and facilitates the thinning development of the display device.
  • the acoustic wave sensor of the display panel is used for health monitoring, and the display device further includes:
  • control device configured to receive a sound amplitude monitored by the acoustic wave sensor of the display panel, compare the sound amplitude with a set threshold, and control the alarm device to issue an alarm when the sound amplitude exceeds a set threshold .
  • a reminder command is issued to remind the user that the current sound volume is higher than the safe volume threshold, and the volume at this time may damage the eardrum and be exposed for a long time.
  • This volume of environment can affect hearing.
  • the display panel of the integrated acoustic wave sensor of the present disclosure has a health monitoring and reminding function for monitoring the volume; and the control device is further configured to control the alarm device to issue an alarm when the sound amplitude is lower than a set threshold, and When the user selects to increase, the volume device that controls the display device increases the volume to within the set threshold.
  • an alert command is also issued to remind the user that the current sound volume is lower than the minimum volume threshold of the user's hearing and remind the user whether the system needs to automatically perform the volume. Adjustment. If the user needs to adjust the volume command, the system will automatically adjust the volume to the safety threshold according to the user's instruction; if the user does not need to adjust the volume, the system will ignore the reminder.
  • the present disclosure also provides a health monitoring method for a display device, comprising the following steps:
  • the sound amplitude of the display device is monitored by an acoustic wave sensor of the display device, and the sound amplitude is compared with a set threshold by a control device, and when the sound amplitude exceeds a set threshold, the alarm device is controlled to issue an alarm.
  • the sound is detected by the acoustic wave sensor, and an alarm is issued when the sound exceeds the set threshold value, thereby improving the user's use effect.
  • the health monitoring method may further include: controlling the alarm device to issue an alarm when the sound amplitude is lower than a set threshold, and controlling the volume device of the display device to increase the volume to within the set threshold when the user selects to increase.
  • the sound is detected by the acoustic wave sensor, and the size of the sound is controlled by the control device, thereby facilitating the user's use.
  • the terms “mounted,” “connected,” and “connected” are used in a broad sense, and may be, for example, a fixed connection, a detachable connection, or an integral connection; it may be a mechanical connection, It can also be an electrical connection; it can be directly connected, or it can be connected indirectly through an intermediate medium, which can be the internal connection of two components.
  • the specific meanings of the above terms in the present disclosure can be understood by those skilled in the art on a case-by-case basis.

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Abstract

提供一种显示面板及其制备方法、显示装置及其健康监测方法。该显示面板包括衬底基板（30）以及设置在所述衬底基板（30）上的声波传感器（20）。所述声波传感器（20）用于监测声波。在上述技术方案中，通过将声波传感器的结构直接形成在衬底基板上，使得在制备显示面板其他结构的同时即可形成声波传感器，提高了显示装置的制备效率，同时降低了形成的显示装置的厚度，便于显示装置的薄型化发展。

Description

显示面板及其制备方法、显示装置及其健康监测方法 技术领域
本公开的实施例涉及到一种显示面板及其制备方法、显示装置及其健康监测方法。
背景技术
现有的显示器件如手机、iPAD等，其语音执行功能都是通过在主板上的麦克风芯片来实现，并且麦克风采用MEMS工艺制作完成，使得整个显示器件的生产流程比较复杂，影响了显示器件的生产效率。例如，现有集中的声波传感器需要安装在主板上，可能会降低显示装置的生产效率，且不便于显示装置的薄型化发展。
发明内容
本公开的实施例提供了一种显示面板及其制备方法、显示装置及其健康监测方法，用以提高显示装置的生产效率，同时便于显示装置的薄型化发展。
本公开的实施例提供了一种显示面板，该显示面板包括衬底基板以及设置在所述衬底基板上的声波传感器。所述声波传感器用于监测声波。
例如，所述声波传感器包括：设置在所述衬底基板上的第一电极层；设置在所述第一电极层上的硅背板；设置在所述硅背板上的支撑层；设置在所述支撑层上的第一膜层；设置在所述第一膜层上的第二电极层；以及设置在所述第二电极层上的第二膜层。例如，所述第一膜层及所述第二膜层为麦拉膜层，所述第一电极层、所述硅背板、所述支撑层及所述第一膜层上设置有连通的声孔。
例如，所述显示面板还包括设置在衬底基板上的薄膜晶体管，所述薄膜晶体管包括栅极层、栅极绝缘层、多晶硅有源层、源漏电极层，所述薄膜晶体管位于衬底基板上的遮挡金属层上，且通过绝缘层与所述遮挡金属层电隔离。例如，所述声波传感器的第一电极层与所述遮挡金属层同层设置；所述声波传感器的硅背板与所述薄膜晶体管中的多晶硅有源层同层设置；所述声波传感器的支撑层与所述薄膜晶体管的栅极绝缘层同层设置；所述声波传感 器的第二电极层与所述薄膜晶体管的栅极层同层设置。
例如，所述支撑层的材料为二氧化硅或氮化硅。
例如，所述第一膜层和第二膜层均包括第一氮化硅层，设置在所述第一氮化硅层上的多晶硅层，以及设置在所述多晶硅层上的第二氮化硅层。
例如，所述衬底基板、所述第一电极层、所述硅背板、所述支撑层和所述第一膜层均在同一位置设置通孔，且所述位于所述衬底基板、所述第一电极层、所述硅背板、所述支撑层和所述第一膜层的通孔连通形成声孔。
例如，所述显示面板为液晶显示面板，所述液晶显示面板还包括位于第二膜层上方的第一阻挡层、第一钝化层、第二阻挡层、第一透明导电层、第二钝化层、第二透明电极层。
例如，所述显示面板还包括设置在衬底基板上的薄膜晶体管，所述薄膜晶体管包括栅极层、栅极绝缘层、非晶硅有源层、源漏电极层。例如，所述声波传感器的第一电极层与所述薄膜晶体管的栅极层同层设置；所述声波传感器的硅背板与所述薄膜晶体管中的非晶硅有源层同层设置；所述声波传感器的第二电极层与所述薄膜晶体管的源漏电极层同层设置。
例如，所述第一膜层和第二膜层均包括第一氮化硅层，设置在所述第一氮化硅层上的非晶硅层，以及设置在所述非晶硅层上的第二氮化硅层。
例如，所述衬底基板、所述第一电极层、所述硅背板、所述支撑层和所述第一膜层均在同一位置设置通孔，且所述位于所述衬底基板、所述第一电极层、所述硅背板、所述支撑层和所述第一膜层的通孔连通形成声孔。
例如，所述显示面板为液晶显示面板，所述液晶显示面板还包括设置于第二膜层上的钝化层、透明导电层。
例如，所述声孔为直通孔或喇叭孔。
例如，所述显示面板为OLED显示面板。
本公开的实施例还提供了一种显示面板的制备方法，该方法包括以下步骤：在衬底基板上形成第一电极层；在所述第一电极层上形成硅背板；在所述硅背板上形成支撑层；在所述支撑层上形成第一膜层；在所述形成的第一膜层、第一电极层、支撑层、硅背板上形成贯通的声孔；在所述第一膜层上形成第二电极层；以及在所述第二电极层上形成第二膜层。
例如，所述制备方法还包括：在形成所述硅背板时，采用一次构图工艺形成薄膜晶体管的有源层；以及在形成的第二电极层时，采用一次构图工艺 形成薄膜晶体管的栅极层。
例如，所述制备方法还包括：在形成第一电极层时，采用一次构图工艺形成栅极层；以及在形成第二电极时，采用一次构图工艺形成所述薄膜晶体管的源极和漏极。
本公开还提供了一种显示装置，该显示装置包括上述任一项所述的显示面板。
在本公开实施例中，通过将声波传感器的结构直接形成在衬底基板上，使得在制备显示面板其他结构的同时即可形成声波传感器，从而简化了制备显示面板的工艺，提高了显示装置的制备效率，同时，声波传感器直接形成在衬底基板上，降低了形成的显示装置的厚度，便于显示装置的薄型化发展。
例如，所述显示面板的声波传感器用于健康监测，所述显示装置还包括：报警装置；控制装置，用于接收所述显示面板的声波传感器监测到的声音振幅，并将所述声音振幅与设定阈值进行比较，在所述声音振幅超过设定阈值时，控制所述报警装置发出警报。
例如，所述控制装置还用于在所述声音振幅低于设定阈值时，控制所述报警装置发出警报，并在用户选择提高时，控制显示装置的音量装置提高音量到设定阈值内。
本公开还提供了一种显示装置的健康监测方法，包括以下步骤：
通过显示装置的声波传感器监测显示装置的声音振幅，并通过控制装置将所述声音振幅与设定阈值进行比较；
在所述声音振幅超过设定阈值时，控制所述报警装置发出警报；以及
在所述声音振幅低于设定阈值时，控制所述报警装置发出警报，并在用户选择提高时，控制显示装置的音量装置提高音量到设定阈值内。
附图说明
为了更清楚地说明本公开的实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为一种示例性的声波传感器的结构示意图；
图2为本公开的实施例提供的一种显示面板的结构示意图；
图3为本公开的实施例提供的另一种显示面板的结构示意图；
图4为本公开的实施例提供的一种显示面板的制备流程图之一；
图5为本公开的实施例提供的一种显示面板的制备流程图之二。
附图标记：
1-下电极  2-硅背板  3-驻极体
4-下麦拉敏感膜片  5-上电极  6-上麦拉敏感膜片
7-声孔  10-薄膜晶体管  11-栅极层
12-栅极绝缘层  13-有源层  14-漏极
15-源极  16-钝化层  17-金属阻挡层  18-隔层  20-声波传感器
21-第一电极层  22-硅背板  23-支撑层
24-第一膜层  25-第二膜层  26-第二电极层
27-声孔  271-第一通孔  272-第二通孔
273-第三通孔  30-衬底基板  40-透明电极层
具体实施方式
下面将结合本公开的实施例中的附图，对本公开的实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开的一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本公开的保护的范围。
在一些实施例中，图1示出了一种示例性的声波传感器的结构示意图。所述声波传感器包括下电极1、硅背板2、驻极体3、下麦拉敏感膜片4、上电极5、上麦拉敏感膜片6和声孔7。例如，下电极1制备在硅背板2上，下麦拉敏感膜片4和上麦拉敏感膜片6设置在上电极5的两侧，驻极体3将上电极5及下电极1间隔开，声孔7设置在驻极体3、下电极1及硅背板2上。
为了提高显示装置的生产效率，同时便于显示装置的薄型化发展，本公开的实施例提供了一种显示面板及其制备方法、显示装置及其健康监测方法。在本公开实施例的技术方案中，通过采用将声波传感器制备在显示面板上，从而使得在形成显示面板上的结构时即可形成声波传感器，简化了显示装置的制备工艺，同时降低了面板的厚度，便于显示装置的薄型化发展。
例如，图2及图3示出了本公开实施例提供的不同的显示面板的结构示意图。
本公开的实施例提供了一种显示面板，该显示面板包括衬底基板30以及设置在所述衬底基板30上的声波传感器20。
在实施例中，通过将声波传感器20的结构直接形成在衬底基板30上，使得在制备显示面板其他结构的同时形成声波传感器20，从而简化了制备显示面板的工艺，提高了显示装置的制备效率。同时，通过将声波传感器20直接形成在衬底基板30上，降低了形成的显示装置的厚度，便于显示装置的薄型化发展。
例如，声波传感器20包括：设置在所述衬底基板30上的第一电极层21；设置在所述第一电极层21上的硅背板22；设置在所述硅背板22上的支撑层23；设置在所述支撑层23上的第一膜层24；设置在所述第一膜层24上的第二电极层26；以及设置在所述第二电极层26上的第二膜层25。例如，所述第一膜层24及所述第二膜层25为麦拉膜层，所述第一电极层21、硅背板22、支撑层23及所述第一膜层24上设置有连通的声孔27。
为了方便对本公开实施例的理解，下面结合具体的实施例，对显示面板的结构进行详细的说明。
实施例1
本公开实施例提供的显示面板包括薄膜晶体管10和声波传感器20。该薄膜晶体管10可以为顶栅结构，其结构包括：有源层13，设置在有源层13上的栅极绝缘层12，设置在栅极绝缘层12上的栅极层11，形成在栅极层11上的隔层18，以及形成在隔层18上的源极15和漏极14。
例如，如图2所示，本实施例提供的显示面板中的薄膜晶体管10包括栅极层11、栅极绝缘层12、多晶硅有源层(例如，有源层13)以及源漏电极层(例如，源极15、漏极14)。薄膜晶体管10位于衬底基板上的遮挡金属层17上，且通过绝缘层与遮挡金属层17电隔离。例如，声波传感器20的第一电极层21与遮挡金属层17同层设置；声波传感器20的硅背板22与薄膜晶体管10中的多晶硅有源层13同层设置；声波传感器20的支撑层23与薄膜晶体管10的栅极绝缘层12同层设置；声波传感器20的第二电极层26与薄膜晶体管10的栅极层11同层设置。
因此，本公开的实施例在形成薄膜晶体管10的同时可以形成声波传感器20，从而减少了声波传感器20在制备时的工艺，简化了生产显示面板的结构以及生产步骤。同时，如图2所示，薄膜晶体管10及声波传感器20并排设置在衬底基板30上，降低了显示面板的厚度，有利于显示装置的薄型化发展。
例如，支撑层23的材料可以为二氧化硅或氮化硅。
例如，声波传感器20中的第一膜层24和第二膜层25均包括设置在第一氧化硅层上的第一氮化硅层，设置在第一氮化硅层上的第二多晶硅层，以及设置在第二多晶硅层上的第二氮化硅层。
在形成声孔27时，衬底基板30、第一电极层21、硅背板22、支撑层23和第一膜层24均在同一位置处设置通孔，且位于衬底基板30、第一电极层21、硅背板22、支撑层23和第一膜层24的各通孔连通形成声孔。例如，如图2所示，声孔27设置在硅背板22、第一电极层21、支撑层23及第一膜层24上，且其具体的结构可以采用直通孔的结构，也可以采用喇叭口的结构。例如，该声孔27采用喇叭口形结构，该声孔27包括形成在硅背板22上的第一通孔271，形成在支撑层23上的第二通孔272，以及在第一膜层24上形成的第三通孔273，且第三通孔273为喇叭口状。第三通孔273、第二通孔272及第一通孔271贯通。第一电极21采用间隔设置的金属条，且支撑层23填充在两个金属条之间并与硅背板22接触，第二通孔272及第一通孔271位于两个金属条之间的位置。
例如，为了提高整个显示面板上的结构的安全性，本公开实施例提供的显示面板还可以包括覆盖在薄膜晶体管10以及声波传感器20之上的钝化层16。钝化层16可以保护薄膜晶体管10及声波传感器20。当然，本实施例提供的显示面板还可以包括设置在钝化层16上并与源极15连接的透明电极层40。
例如，显示面板可以为液晶显示面板，液晶显示面板还包括位于第二膜层上方的第一阻挡层、第一钝化层、第二阻挡层、第一透明导电层、第二钝化层、第二透明电极层。
通过上述描述可以看出，本实施例提供的显示面板采用薄膜晶体管10及声波传感器20并排排列的设置结构，从而简化了显示面板的生产工艺，在制备薄膜晶体管10时即可制作声波传感器20，并且，本实施例提供的显示面板由于薄膜晶体管10与声波传感器20并排排列，因此，降低了显示面板 的厚度，便于显示装置的薄型化发展。
实施例2
如图3所示，本实施例提供的显示面板包括薄膜晶体管10和声波传感器20。该薄膜晶体管10为底栅结构，其结构可以包括：栅极层11，设置在栅极层11上的栅极绝缘层12，设置在栅极绝缘层12上的有源层13，设置在有源层13上的源极15和漏极14。例如，薄膜晶体管10包括栅极层11、栅极绝缘层12、非晶硅有源层13、源漏电极层(例如，源极15和漏极14)。例如，所述声波传感器20的第一电极层21与所述薄膜晶体管10的栅极层11同层设置；所述声波传感器20的硅背板22与所述薄膜晶体管10中的非晶硅有源层13同层设置；所述声波传感器20的第二电极层26与所述薄膜晶体管10的源漏电极层同层设置。
例如，支撑层23包括在形成薄膜晶体管10的有源层13同层设置的硅化物层以及位于该硅化物层上方的氧化硅层；即在制备有源层13时，位于第一电极层21上方的硅化物层作为支撑层23的一部分，并且在支撑层23上设置一层氧化硅层；该硅化物及氧化硅层一起作为支撑层23。
例如，第二电极层26与薄膜晶体管10的源极15和漏极14同层设置。
例如，第一膜层24和第二膜层25均包括第一氮化硅层，设置在所述第一氮化硅层上的非晶硅层，以及设置在所述非晶硅层上的第二氮化硅层。
通过上述结构可以看出，在制备薄膜晶体管10时，同步制备声波传感器20，从而减少了制备显示面板的工艺，提高了显示面板的制作效率；同时，由于薄膜晶体管10与声波传感器20并排排列，从而降低了显示面板的厚度，进而便于显示装置的薄型化发展。
在形成声孔27时，衬底基板30、第一电极层21、硅背板22、支撑层23和第一膜层24均在同一位置设置通孔，且位于衬底基板30、第一电极层21、硅背板22、支撑层23和第一膜层24的各通孔连通形成声孔。例如，声孔27设置在硅背板22、第一电极层21、支撑层23及第一膜层24上，且声孔27的具体结构可以采用直通孔的结构，也可以采用喇叭口的结构。如图3所示，该声孔27采用直通孔结构，即其包括形成在硅背板22及支撑层23上的第一通孔271，形成在第一膜层24上第二通孔272；第二通孔272与第一通孔271贯通；第一电极层21采用间隔设置的金属条，且支撑层23填充在两个金属 条之间并与硅背板22接触，第二通孔272及第一通孔271位于两个金属条之间的位置。
例如，为了提高整个显示面板上的结构的安全性，本公开实施例提供的显示面板还包括覆盖在薄膜晶体管10以及声波传感器20之上的钝化层16。钝化层16可以保护薄膜晶体管10及声波传感器20。当然，本实施例提供的显示面板还包括设置在钝化层16上并与源极15连接的透明电极层40。
例如，本实施例提供的显示面板为液晶显示面板，所述液晶显示面板还包括设置于第二膜层上的钝化层、透明导电层。
又例如，本实施例提供的显示面板为OLED显示面板。
为了更进一步的对本公开实施例提供的显示面板的理解，本公开实施例还提供了一种显示面板的制备方法，该方法包括以下步骤：
在衬底基板上形成第一电极层；
在所述第一电极层上形成硅背板；
在所述硅背板上形成支撑层；
在所述支撑层上形成第一膜层；
在所述形成的第一膜层、第一电极层、支撑层、硅背板上形成贯通的声孔；
在所述第一膜层上形成第二电极层；以及
在所述第二电极层上形成第二膜层。
通过上述方法可以看出，将声波传感器直接制备在衬底基板上，使得在制备显示面板的其他结构的同时即可形成声波传感器，从而简化了制备显示面板的工艺，提高了显示装置的制备效率；同时，声波传感器直接形成在衬底基板上，降低了形成的显示装置的厚度，便于显示装置的薄型化发展。
例如，该方法包括：在衬底基板上形成第一电极层；在所述第一电极层上形成硅背板；在所述硅背板上形成支撑层；在所述支撑层上形成第一膜层；在所述形成的第一膜层、第一电极层、支撑层、硅背板上形成贯通的声孔；在所述第一膜层上形成第二电极层；在所述第二电极层上形成第二膜层。
为了方便对本方法的理解，下面结合具体的实施例对其进行详细的说明。
实施例3
本实施例提供的制备方法可以用于制备上述实施例1提供的显示面板。 如图4所示，该制备方法包括：
步骤001、在玻璃衬底基板的固定位置处形成第一通孔。
步骤002、在玻璃衬底基板上形成缓冲层。
步骤003、在缓冲层上形成第一电极层。例如，该第一电极层包括多条间隔排列的金属条状电极。
步骤004、在第一电极层上形成有氮化硅层。例如，所述氮化硅层可以作为薄膜晶体管上的有源层以及声波传感器的硅背板。
步骤005、在形成的氮化硅层上形成栅极绝缘层。例如，栅极绝缘层同时作为声波传感器的驻极体(或支撑层)，同时利用光刻显影形成第二通孔；该栅极绝缘层为第一氧化硅层。
步骤006、在栅极绝缘层上形成第一膜层。
例如，该第一膜层位于第一电极的上方；且该第一膜层包括：在第一氧化硅层上的第一氮化硅层，设置在第一氮化硅层上的第二多晶硅层，以及设置在第二多晶硅层上的第二氮化硅层。该第一膜层可以通过微影工艺形成第三通孔。第一通孔、第二通孔及第三通孔可以连通形成声孔。
步骤007、在栅极绝缘层上形成栅极金属层，且该栅极金属层同时作为传感器的第二电极。
例如，在栅极绝缘层上形成栅极金属层，并根据薄膜晶体管的结构及声波传感器的结构，对形成的栅极金属层进行刻蚀，形成栅极层以及第二电极。
步骤008、在第一电极层的上方形成第二膜层。
例如，该第二膜层的结构与第一膜层的结构相同，即该第二膜层可以由两层氧化硅层中间夹设一层多晶硅层形成。
步骤009、在形成的第二膜层上形成隔离层。
步骤010、在形成的隔离层上形成源极和漏极。
步骤011、在形成的源极和漏极上覆盖钝化层。
例如，该钝化层覆盖薄膜晶体管及声波传感器。
步骤012、在形成的钝化层上形成透明电极，且透明电极与源极连接。
实施例4
本实施例提供的制备方法可以用于制备实施例2提供的显示面板，其中，该显示面板采用底栅结构。如图5所示，该方法包括：
步骤021、在玻璃衬底基板的固定位置处形成通孔。
步骤022、在衬底基板上形成栅极金属层，该栅极金属层同时作为第一电极。
例如，在衬底基板上形成栅极金属层，并根据薄膜晶体管的结构及声波传感器的结构，对形成的栅极金属层进行刻蚀，形成栅极层以及第二电极。
步骤023、在栅极金属层上形成有源层。
例如，步骤023可以包括：沉积非晶硅(a-Si)；在形成的非晶硅(a-Si)上沉积形成N型掺杂非晶硅(n+a–Si)，并通过微影工艺形成有源层。
步骤024、在形成的有源层上形成氧化硅层，并通过刻蚀工艺形成位于第一电极上方的支撑层。
步骤025、在形成的支撑层上形成第一膜层。
例如，第一膜层由两层氧化硅层中间夹设一层多晶硅层形成。
步骤026、形成源漏电极层，并通过刻蚀工艺形成源极、漏极以及声波传感器的第二电极。
步骤027、在形成的第二电极层上形成第二膜层。
例如，第二膜层的结构与第一膜层的结构相同，即第二膜层可以由两层氧化硅层中间夹设一层多晶硅层形成。
步骤028、在形成的第二膜层上形成钝化层。
例如，在形成的第二膜层上形成钝化层，且钝化层覆盖在薄膜晶体管上。步骤028还可以包括通过微影工艺在钝化层中形成过孔。
步骤029、形成透明电极，该透明电极为像素电极，且该像素电极穿过过孔与源极连接。
通过上述具体实施例3及实施例4的显示面板制备方法可以看出，本公开实施例提供的显示面板的制备方法将声波传感器直接制备在衬底基板上，使得在制备显示面板其他结构的同时即可形成声波传感器，从而简化了制备显示面板的工艺，提高了显示装置的制备效率。同时，声波传感器直接形成在衬底基板上，降低了形成的显示装置的厚度，便于显示装置的薄型化发展。
本公开实施例还提供了一种显示装置，该显示装置包括上述任一项的显示面板。
在上述实施例中，通过将声波传感器的结构直接形成在衬底基板上，使得在制备显示面板其他结构的同时即可形成声波传感器，从而简化了制备显 示面板的工艺，提高了显示装置的制备效率。同时，声波传感器直接形成在衬底基板上，降低了形成的显示装置的厚度，便于显示装置的薄型化发展。
在一些实施例中，所述显示面板的声波传感器用于健康监测，所述显示装置还包括：
报警装置；以及
控制装置，用于接收所述显示面板的声波传感器监测到的声音振幅，并将所述声音振幅与设定阈值进行比较，在所述声音振幅超过设定阈值时，控制所述报警装置发出警报。
例如，当显示装置监测到声音的振幅大于系统设定的阈值时，会发出提醒指令，提醒用户当前的声音音量高于安全的音量阈值，此时的音量对于耳膜会有损伤，长时间暴露在此音量的环境下会影响听力。
本公开的集成声波传感器的显示面板，其健康监测和提醒功能是指对音量进行监测；控制装置还用于在所述声音振幅低于设定阈值时，控制所述报警装置发出警报，并在用户选择提高时，控制显示装置的音量装置提高音量到设定阈值内。
例如，当显示装置监测到声音的振幅低于系统设定的阈值时，同样会发出提醒指令，提醒用户当前的声音音量低于用户听力接听的最低音量阈值以及提醒用户是否需要系统自动对音量进行调整。如果接到用户需要调整音量的指令，则系统会根据用户指令自动将音量调整到安全阈值范围；如果接到用户无需调整音量的指令，则系统即忽略此次提醒。
本公开还提供了一种显示装置的健康监测方法，包括以下步骤：
通过显示装置的声波传感器监测显示装置的声音振幅，并通过控制装置将所述声音振幅与设定阈值进行比较，在所述声音振幅超过设定阈值时，控制所述报警装置发出警报。
在上述步骤中，通过声波传感器检测声音，并在声音超过设定阈值时发出警报，可以提高用户的使用效果。
该健康监测方法还可以包括：在所述声音振幅低于设定阈值时，控制所述报警装置发出警报，并在用户选择提高时，控制显示装置的音量装置提高音量到设定阈值内。
在上述步骤中，通过声波传感器检测声音，并通过控制装置控制声音的大小，从而方便用户的使用。
需要指出的是，在附图中，为了图示的清晰可能夸大了层和区域的尺寸。而且可以理解，当元件或层被称为在另一元件或层“上”时，它可以直接在其他元件上，或者可以存在中间的层。另外，可以理解，当元件或层被称为在另一元件或层“下”时，它可以直接在其他元件下，或者可以存在一个以上的中间的层或元件。另外，还可以理解，当层或元件被称为在两层或两个元件“之间”时，它可以为两层或两个元件之间惟一的层，或还可以存在一个以上的中间层或元件。通篇相似的参考标记指示相似的元件。
而且，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
还需要说明的是，术语“上”、“下”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本公开和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本公开的限制。除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本公开中的具体含义。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。
本申请要求于2015年9月17日递交的中国专利申请第201510595944.2号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (20)

  1. 一种显示面板，包括：
    衬底基板；以及
    设置在所述衬底基板上的声波传感器，所述声波传感器用于监测声波。
  2. 如权利要求1所述的显示面板，其中，所述声波传感器包括：
    设置在所述衬底基板上的第一电极层；
    设置在所述第一电极层上的硅背板；
    设置在所述硅背板上的支撑层；
    设置在所述支撑层上的第一膜层；
    设置在所述第一膜层上的第二电极层；以及
    设置在所述第二电极层上的第二膜层；
    其中，所述第一膜层及所述第二膜层为麦拉膜层，所述第一电极层、所述硅背板、所述支撑层及所述第一膜层上设置有连通的声孔。
  3. 如权利要求2所述的显示面板，还包括设置在衬底基板上的薄膜晶体管，其中，
    所述薄膜晶体管包括栅极层、栅极绝缘层、多晶硅有源层、源漏电极层；
    所述薄膜晶体管位于衬底基板上的遮挡金属层上，且通过绝缘层与所述遮挡金属层电隔离；
    所述声波传感器的第一电极层与所述遮挡金属层同层设置；
    所述声波传感器的硅背板与所述薄膜晶体管中的多晶硅有源层同层设置；
    所述声波传感器的支撑层与所述薄膜晶体管的栅绝缘层同层设置；以及
    所述声波传感器的第二电极层与所述薄膜晶体管的栅极层同层设置。
  4. 如权利要求2和3任一项所述的显示面板，其中，所述支撑层的材料为二氧化硅或氮化硅。
  5. 如权利要求2-4任一项所述的显示面板，其中，所述第一膜层和第二膜层均包括第一氮化硅层，设置在所述第一氮化硅层上的多晶硅层，以及设置在所述多晶硅层上的第二氮化硅层。
  6. 如权利要求2-5任一项所述的显示面板，其中，所述衬底基板、所述第一电极层、所述硅背板、所述支撑层和所述第一膜层均在同一位置设置通 孔，且所述位于所述衬底基板、所述第一电极层、所述硅背板、所述支撑层和所述第一膜层的通孔连通形成声孔。
  7. 如权利要求2-6任一项所述的显示面板，其中，所述显示面板为液晶显示面板，所述液晶显示面板还包括位于第二膜层上方的第一阻挡层、第一钝化层、第二阻挡层、第一透明导电层、第二钝化层以及第二透明电极层。
  8. 如权利要求2所述的显示面板，其中，所述显示面板还包括设置在衬底基板上的薄膜晶体管，所述薄膜晶体管包括栅极层、栅极绝缘层、非晶硅有源层、源漏电极层；
    所述声波传感器的第一电极层与所述薄膜晶体管的栅极层同层设置；
    所述声波传感器的硅背板与所述薄膜晶体管中的非晶硅有源层同层设置；以及
    所述声波传感器的第二电极层与所述薄膜晶体管的源漏电极层同层设置。
  9. 如权利要求8所述的显示面板，其中，所述第一膜层和第二膜层均包括第一氮化硅层、设置在所述第一氮化硅层上的非晶硅层以及设置在所述非晶硅层上的第二氮化硅层。
  10. 如权利要求8和9任一项所述的显示面板，其中，所述衬底基板、所述第一电极层、所述硅背板、所述支撑层和所述第一膜层均在同一位置设置通孔，且所述位于所述衬底基板、所述第一电极层、所述硅背板、所述支撑层和所述第一膜层的通孔连通形成声孔。
  11. 如权利要求8-10任一项所述的显示面板，其中，所述显示面板为液晶显示面板，所述液晶显示面板还包括设置于第二膜层上的钝化层、透明导电层。
  12. 如权利要求1-11任一项所述的显示面板，其中，所述声孔为直通孔或喇叭孔。
  13. 如权利要求1-11任一项所述的显示面板，其中，所述显示面板为OLED显示面板。
  14. 一种显示面板的制备方法，包括：
    在衬底基板上形成第一电极层；
    在所述第一电极层上形成硅背板；
    在所述硅背板上形成支撑层；
    在所述支撑层上形成第一膜层；
    在所述形成的第一膜层、第一电极层、支撑层、硅背板上形成贯通的声孔；
    在所述第一膜层上形成第二电极层；以及
    在所述第二电极层上形成第二膜层。
  15. 如权利要求14所述的显示面板的制备方法，还包括：
    在形成所述硅背板时，采用一次构图工艺形成薄膜晶体管的有源层；
    在形成的第二电极层时，采用一次构图工艺形成薄膜晶体管的栅极层。
  16. 如权利要求14所述的显示面板的制备方法，还包括：
    在形成第一电极层时，采用一次构图工艺形成栅极层；
    在形成第二电极时，采用一次构图工艺形成所述薄膜晶体管的源极和漏极。
  17. 一种显示装置，包括如权利要求1-13任一项所述的显示面板。
  18. 如权利要求17所述的显示装置，其中，所述显示面板的声波传感器用于健康监测，所述显示装置还包括：
    报警装置；
    控制装置，用于接收所述显示面板的声波传感器监测到的声音振幅，并将所述声音振幅与设定阈值进行比较，在所述声音振幅超过设定阈值时，控制所述报警装置发出警报。
  19. 如权利要求18所述的显示装置，其中，所述控制装置还用于在所述声音振幅低于设定阈值时，控制所述报警装置发出警报，并在用户选择提高时，控制显示装置的音量装置提高音量到设定阈值内。
  20. 一种如权利要求18和19任一项所述的显示装置的健康监测方法，包括以下步骤：
    通过显示装置的声波传感器监测显示装置的声音振幅，并通过控制装置将所述声音振幅与设定阈值进行比较；
    在所述声音振幅超过设定阈值时，控制所述报警装置发出警报；以及
    在所述声音振幅低于设定阈值时，控制所述报警装置发出警报，并在用户选择提高时，控制显示装置的音量装置提高音量到设定阈值内。
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