WO2015043078A1 - 阵列基板及其制作方法和显示装置 - Google Patents

阵列基板及其制作方法和显示装置 Download PDF

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WO2015043078A1
WO2015043078A1 PCT/CN2013/088840 CN2013088840W WO2015043078A1 WO 2015043078 A1 WO2015043078 A1 WO 2015043078A1 CN 2013088840 W CN2013088840 W CN 2013088840W WO 2015043078 A1 WO2015043078 A1 WO 2015043078A1
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Prior art keywords
array substrate
layer
source
oxide
active layer
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PCT/CN2013/088840
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English (en)
French (fr)
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王盛
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合肥京东方光电科技有限公司
京东方科技集团股份有限公司
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Priority to US14/354,247 priority Critical patent/US20150162361A1/en
Publication of WO2015043078A1 publication Critical patent/WO2015043078A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

Definitions

  • Embodiments of the present invention relate to the field of display technologies, and in particular, to an array substrate, a manufacturing method thereof, and a display device. Background technique
  • liquid crystal display As an important flat panel display method, liquid crystal display has developed rapidly in the past ten years.
  • the liquid crystal display has the advantages of lightness, thinness, low energy consumption, etc., and is widely used in modern information equipment such as televisions, computers, mobile phones, and digital cameras.
  • oxide thin film transistors Oxide TFTs
  • Oxides reduce the size of thin film transistors and increase resolution due to higher mobility. To increase the resolution, it is necessary to reduce the width of the source and drain electrode lines, but this causes the metal wires to be easily broken. Summary of the invention
  • Embodiments of the present invention provide an array substrate, a manufacturing method thereof, and a display device.
  • An aspect of the invention provides an array substrate comprising: an oxide active layer comprising a semiconductor region not subjected to metallization and a metallized metal oxide conductor region.
  • the array substrate further includes an etch barrier layer and a source/drain electrode layer, where the semiconductor region and the etch barrier layer correspond to each other;
  • the metal oxide conductor region corresponds to the source drain electrode position.
  • the array substrate further includes a gate, a gate insulating layer, a pixel electrode layer, and a passivation layer.
  • the oxide active layer includes at least one of InGaZnO, InGaO, ITZO, ⁇ .
  • the present invention also provides a method for fabricating an array substrate, including:
  • a pattern of an oxide active layer is formed, the pattern of the oxide active layer including a semiconductor region that has not been metallized and a metallized metal oxide conductor region.
  • the pattern of forming the oxide active layer includes:
  • a source/drain metal layer is formed, and a pattern of source and drain electrodes and a metal oxide conductor region are simultaneously formed by a patterning process; wherein the metal oxide conductor region corresponds to a position of the source and drain electrodes.
  • the oxide active layer includes at least one of InGaZnO, InGaO, ITZO, ⁇ .
  • the metallization treatment is performed in a reducing atmosphere at 100-300 °C
  • the reducing atmosphere comprises hydrogen or a hydrogen containing plasma.
  • the metal oxide conductor region corresponds to the location of the source and drain electrodes, and the semiconductor region corresponds to the location of the etch stop layer.
  • the present invention also provides a display device comprising the above array substrate.
  • 1 is a plan view showing the structure of an array substrate according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of the array substrate after completion of the gate electrode according to an embodiment of the present invention
  • FIG. 3 is a cross-sectional view showing an etch barrier layer in an array substrate according to an embodiment of the present invention
  • FIG. 4 is a cross-sectional view showing completion of a data line layer in an array substrate according to an embodiment of the present invention
  • FIG. 5 is a cross-sectional view showing the completion of a via process in an array substrate according to an embodiment of the present invention
  • FIG. 6 is a cross-sectional view of the entire array substrate after the pixel electrode process is completed in the array substrate according to the embodiment of the present invention.
  • FIG. 7 is a flowchart of a method for fabricating an array substrate according to an embodiment of the present invention.
  • an array substrate is provided, and the array substrate is described by taking a bottom gate structure as an example.
  • the array substrate includes a substrate 0.
  • the substrate 0 is provided with a gate electrode 11, a gate insulating layer 21, an oxide active layer, an etch stop layer 23, and a source/drain electrode layer 31.
  • the oxide active layer includes a semiconductor region 22 that has not been metallized and a metallized metal oxide conductor region 24 that has been subjected to metallization.
  • the semiconductor region 22 corresponds to the position of the etch stop layer 23; the metal oxide conductor region 24 corresponds to the position of the source and drain electrodes 31 and is located below the source and drain electrodes 31.
  • the oxide active layer includes, for example, at least one of InGaZnO, InGaO, ITZO, and ⁇ .
  • the material of the oxide active layer may be other materials having the same or similar characteristics as the above materials, in addition to the enumerated ones.
  • a metal oxide conductor region is formed by metallizing a portion of the oxide active layer corresponding to the etch barrier layer, and the source-drain electrode layer can be effectively reduced because the metal oxide conductor region has a conductor feature. Resistance and minimize the chance of data line breaks.
  • the embodiment of the present invention provides an array substrate, which is different from the first embodiment in that the array substrate in this embodiment is a top gate structure.
  • the array substrate includes a substrate on which a pixel electrode layer, a source/drain electrode layer, an oxide active layer, a barrier layer, a gate insulating layer and a gate are disposed, wherein the pixel electrode layer is connected to the drain electrode.
  • the oxide active layer comprises a semiconductor region that has not been metallized and a metallized metal oxide conductor region.
  • the semiconductor region and the location of the etch stop layer correspond; the metal
  • the oxide conductor region corresponds to the position of the source/drain electrode layer and is located above the source and drain electrode layers.
  • the oxide active layer includes, for example, at least one of InGaZnO, InGaO, ITZO, and ⁇ .
  • the material of the oxide active layer may be other materials having the same or similar characteristics as the above materials, in addition to the enumerated ones.
  • the improvement of the array substrate of the present embodiment is mainly an improvement of the oxide active layer.
  • the top gate structure in the prior art and details are not described herein again.
  • the present invention also provides a method for fabricating an array substrate based on the array substrate structure of the first embodiment, including:
  • a gate metal film is deposited on the substrate 0, and a pattern of the gate electrode 11 is formed by a patterning process, which includes, for example, processes such as exposure, development, etching, and lift-off, and may also be printing or screen printing. Process.
  • Forming a gate insulating material, an oxide semiconductor material, and an etch barrier pattern in sequence for example, referring to FIG. 3, depositing a gate insulating material, an oxide semiconductor material 22, and an etch barrier material on the substrate on which the step 1 is completed, A pattern of the etch barrier layer 23 is formed by a patterning process.
  • the oxide semiconductor material may include at least one of InGaZnO, InGaO, ITZO, and AlZnO.
  • InGaZnO InGaO
  • ITZO ITZO
  • AlZnO AlZnO
  • a portion of the oxide semiconductor material not covered by the etch barrier layer is metallized to be covered by the etch barrier layer, and the portion not subjected to metallization is formed into a semiconductor region;
  • a portion of the oxide semiconductor material that is not covered by the etch barrier layer is metallized.
  • the metallization treatment is carried out in a reducing atmosphere at 100-300 ° C for 30-120 minutes, and the reducing atmosphere includes hydrogen or a hydrogen-containing plasma.
  • the reduction reaction takes place in a reducing atmosphere of 100-300 ° C for 30-120 minutes, which ensures that the portion of the oxide active layer not covered by the etch barrier layer can be sufficiently and effectively reduced to metal.
  • Oxide conductor If the temperature is too low, the reduction effect of the reduction reaction will be affected, and the reaction time will be prolonged, and the production efficiency will be lowered; if the temperature is too high, it is easy to cover the oxide active layer with the etch barrier layer.
  • the metallized part is chemically affected, which in turn affects the structural properties. Similarly, if the time is too short, the reduction reaction will be insufficiently carried out. If the time is too long, the reaction time will be prolonged. Low production efficiency.
  • the metal oxide conductor region obtained by the metallization treatment has a conductor characteristic, so that the resistance of the source/drain electrode layer is effectively reduced and the probability of disconnection of the source/drain electrode layer is minimized.
  • a portion of the oxide semiconductor material covered by the etched barrier layer is the semiconductor region 22.
  • the pattern of the source/drain electrodes 31 and the pattern of the metal oxide conductor regions 24 are completed in the same patterning process.
  • the metal oxide conductor 24 corresponds to the position of the source and drain electrodes 31 and is located below the source and drain electrodes 31.
  • the step includes: depositing a source/drain metal layer on the metallized metal oxide conductor region 24, and after the two-layer film structure is subjected to a single exposure process, first etching the source/drain metal layer. Forming a pattern of source and drain electrode layers, replacing the etching solution, and continuing etching the metal oxide conductor region to form a metal oxide conductor region; the source/drain electrode layer and the metal oxide conductor region may be the same, or may be different .
  • the passivation layer 41 and the via hole 42 are formed by a patterning process.
  • a pattern of pixel electrodes is formed by a patterning process.
  • the pattern of the pixel electrode 51 is formed by a patterning process.
  • a metal oxide conductor layer is formed by metallizing a portion of the oxide active layer not covered by the etch barrier layer, and the metal oxide conductor layer has a conductor characteristic, thereby effectively reducing the resistance of the data line. And minimize the chance of data line disconnection.
  • the patterning process employed in the present invention is a process of exposure, development, etching, and lifting which is generally employed in the prior art.
  • the embodiment of the present invention further provides a display device, including the array substrate, and the display device may be: a liquid crystal panel, an electronic paper, an OLED panel, a liquid crystal television, a liquid crystal display, a digital photo frame, a mobile phone, a tablet computer, etc. A product or part that displays functionality.

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Abstract

一种显示装置、阵列基板及其制作方法。该阵列基板包括氧化物有源层，该氧化物有源层包括未经过金属化处理的半导体区域（22）和经过金属化处理的金属氧化物导体区域（24）。由于金属氧化物导体区域具有导体特征，可减小源漏电极层的电阻并降低数据线发生断线的几率。

Description

阵列基板及其制作方法和显示装置 技术领域
本发明实施例涉及显示技术领域， 特别涉及一种阵列基板及其制作方法 和显示装置。 背景技术
液晶显示作为一种重要的平板显示方式， 近十多年有了飞速的发展。 液 晶显示有轻、 薄、 低能耗等优点， 被广泛应用与电视、 计算机、 手机、 数码 相机等现代化信息设备。 近年来， 氧化物薄膜晶体管（ Oxide TFT )因迁移率 高备受业界关注。 氧化物因较高的迁移率可减小薄膜晶体管尺寸， 提升分辨 率。 提升分辨率同时需减小源漏电极线的宽度， 但这样导致金属线容易发生 断线现象。 发明内容
本发明实施例提供一种阵列基板及其制作方法和显示装置。
本发明一方面提供一种阵列基板， 包括： 氧化物有源层， 所述氧化物有 源层包括未经过金属化处理过的半导体区域和经过金属化处理过的金属氧化 物导体区域。
在一个示例中， 所述阵列基板还包括刻蚀阻挡层和源漏电极层， 所述半导体区域和刻蚀阻挡层的位置相对应；
所述金属氧化物导体区域与所述源漏电极位置相对应。
在一个示例中， 所述阵列基板还包括栅极、 栅极绝缘层、 像素电极层和 钝化层。
在一个示例中，所述氧化物有源层包括 InGaZnO、 InGaO、 ITZO、 ΑΙΖηΟ 中的至少一种。
另一方面， 本发明还提供一种阵列基板的制作方法， 包括：
形成氧化物有源层的图案， 所述氧化物有源层的图案包括未经过金属化 处理过的半导体区域和经过金属化处理过的金属氧化物导体区域。 在一个示例中， 所述形成氧化物有源层的图案包括：
形成氧化物半导体材料；
在该氧化物半导体材料上形成刻蚀阻挡层的图案；
对氧化物半导体材料中未被刻蚀阻挡层覆盖的部分进行金属化处理， 被 刻蚀阻挡层覆盖的部分形成半导体区域；
形成源漏金属层， 并通过构图工艺同时形成源漏电极的图案和金属氧化 物导体区域； 其中， 所述金属氧化物导体区域与源漏电极的位置相对应。
在一个示例中，所述氧化物有源层包括 InGaZnO、 InGaO、 ITZO、 ΑΙΖηΟ 中的至少一种。
在一个示例中， 所述金属化处理为在 100-300 °C的还原性气氛中处理
30-120分钟。
在一个示例中， 所述还原性气氛包括氢气或含氢等离子体。
在一个示例中， 所述金属氧化物导体区域与源漏电极的位置相对应， 所 述半导体区域和刻蚀阻挡层的位置相对应。
再一方面， 本发明还提供一种显示装置， 包括上述的阵列基板。 附图说明
为了更清楚地说明本发明实施例的技术方案， 下面将对实施例的附图作 筒单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例， 而非对本发明的限制。
图 1为本发明实施例阵列基板结构平面图；
图 2为本发明实施例阵列基板中栅极完成后的截面图；
图 3为本发明实施例阵列基板中刻蚀阻挡层制作完成后截面图； 图 4为本发明实施例阵列基板中数据线层制作完成后截面图；
图 5为本发明实施例阵列基板中过孔工艺制作完成后截面图；
图 6为本发明实施例阵列基板中像素电极工艺制作完成后整个阵列基板 截面图；
图 7为本发明实施例阵列基板制作方法流程图。 具体实施方式 为使本发明实施例的目的、 技术方案和优点更加清楚， 下面将结合本发 明实施例的附图，对本发明实施例的技术方案进行清楚、 完整地描述。显然， 所描述的实施例是本发明的一部分实施例， 而不是全部的实施例。 基于所描 述的本发明的实施例， 本领域普通技术人员在无需创造性劳动的前提下所获 得的所有其他实施例， 都属于本发明保护的范围。
实施例一
本实施例中提供一种阵列基板， 该阵列基板以底栅结构为例进行说明。 如图 1和图 6所示， 该阵列基板包括基板 0, 在基板 0上设有栅极 11、 栅极绝缘层 21、 氧化物有源层、 刻蚀阻挡层 23、 源漏电极层 31、 钝化层 41 和像素电极层 51 ; 所述钝化层 41上设有过孔 42, 像素电极层 51通过过孔
42与漏电极连接。
所述氧化物有源层包括未经过金属化处理过的半导体区域 22 和经过金 属化处理过的金属氧化物导体区域 24。
在一个示例中， 所述半导体区域 22和刻蚀阻挡层 23的位置相对应； 所 述金属氧化物导体区域 24与源漏电极 31的位置相对应，且位于源漏电极 31 的下方。
氧化物有源层例如包括 InGaZnO、 InGaO、 ITZO、 ΑΙΖηΟ 中的至少一种。 当然， 该氧化物有源层的材质除了列举出来的几种， 也可以为与上述材料具 有相同或相似特征的其他材料。
本发明实施例通过将氧化物有源层中与刻蚀阻挡层相对应的部分进行金 属化处理形成金属氧化物导体区域，由于金属氧化物导体区域具有导体特征， 可有效减小源漏电极层的电阻且最大程度降低数据线发生断线的几率。
实施例二
本发明实施例提供一种阵列基板，该阵列基板与实施例一不同之处在于， 本实施例中的阵列基板为顶栅结构。
该阵列基板包括基板， 在基板上设有像素电极层、 源漏电极层、 氧化物 有源层、 阻挡层、 栅绝缘层和栅极， 其中， 所述像素电极层与漏电极连接。
其中， 该氧化物有源层包括未经过金属化处理过的半导体区域和经过金 属化处理过的金属氧化物导体区域。
在一个示例中， 所述半导体区域和刻蚀阻挡层的位置相对应； 所述金属 氧化物导体区域与源漏电极层的位置相对应， 且位于源漏电极层的上方。 氧化物有源层例如包括 InGaZnO、 InGaO、 ITZO、 ΑΙΖηΟ 中的至少一种。 当然， 该氧化物有源层的材质除了列举出来的几种， 也可以为与上述材料具 有相同或相似特征的其他材料。
需要说明的是， 本实施例阵列基板的改进主要为氧化物有源层的改进， 其他层结构可参照现有技术中的顶栅结构， 在此不再赘述。
实施例三
如图 7所示， 基于实施例一的阵列基板结构， 本发明还提供一种阵列基 板的制作方法， 包括：
在基板上形成栅极的图案；
例如， 参考图 2, 在基板 0上沉积栅金属膜， 通过构图工艺形成栅极 11 的图案， 该构图工艺例如包括： 曝光、 显影、 刻蚀和剥离等工艺， 也可以为 打印、 丝网印刷工艺。
依次形成栅极绝缘材料、 氧化物半导体材料， 以及刻蚀阻挡层的图案； 例如， 参考图 3 , 在完成步骤 1的基板上沉积栅绝缘材料、 氧化物半导 体材料 22和刻蚀阻挡层材料， 通过构图工艺形成刻蚀阻挡层 23的图案。
氧化物半导体材料可包括 InGaZnO、 InGaO、 ITZO, AlZnO 中的至少一 种。 当然， 除了列举出来的几种优选的材料， 具有与上述材料相同或相似的 其他氧化物材料同样适用。
将氧化物半导体材料中未被刻蚀阻挡层覆盖的部分进行金属化处理而被 刻蚀阻挡层覆盖、 未进行金属化处理的部分形成半导体区域；
例如， 参考图 4, 本步骤中， 将氧化物半导体材料中未被刻蚀阻挡层覆 盖的部分进行金属化处理。 金属化处理是在 100-300 °C的还原性气氛中处理 30-120分钟， 还原性气氛包括氢气或含氢等离子体。 采用在 100-300°C的还 原性气氛中发生还原反应 30-120分钟，可最大程度的确保氧化物有源层中未 被刻蚀阻挡层覆盖的部分可以充分地、 有效地被还原成金属氧化物导体。 若 该温度过低， 将影响还原反应的还原效果， 并且会延长该反应时间， 降低了 生产效率； 若该温度过高， 容易将氧化物有源层中被刻蚀阻挡层覆盖的不需 要进行金属化处理的部分受到化学作用， 进而影响该结构性能； 同样， 若时 间过短， 将导致还原反应进行地不充分， 若时间过长， 将延长反应时间， 降 低生产效率。
经过金属化处理后得到的金属氧化物导体区域具有导体特征， 因此， 有 效减小源漏电极层的电阻且最大程度降低源漏电极层发生断线的几率。
被刻蚀阻挡层覆盖的氧化物半导体材料的部分为半导体区域 22。
形成源漏金属层， 并通过一次构图工艺形成源漏电极层的图案和金属氧 化物导体区域；
继续参考图 4, 为了节省工艺， 设置源漏电极 31的图案和金属氧化物导 体区域 24的图案在同一次构图工艺中完成。 其中， 金属氧化物导体 24与源 漏电极 31的位置相对应， 且位于源漏电极 31的下方。
例如，该步骤包括：在经过金属化处理后的金属氧化物导体区域 24上沉 积源漏金属层， 该两层膜层结构共同经过一次曝光工艺后， 首先对源漏金属 层进行一次刻蚀， 形成源漏电极层的图案， 更换刻蚀液， 继续对金属氧化物 导体区域进行刻蚀， 形成金属氧化物导体区域案； 该源漏电极层和金属氧化 物导体区域可以相同， 当然也可以不同。
形成钝化层， 并形成过孔；
参考图 5 , 在完成上述步骤的基板上， 通过构图工艺形成钝化层 41及过 孔 42。
通过构图工艺形成像素电极的图案。
参考图 6, 在完成上述步骤的基板上， 通过构图工艺形成像素电极 51的 图案。
本发明实施例通过将氧化物有源层中未被刻蚀阻挡层覆盖的部分进行金 属化处理形成金属氧化物导体层， 由于金属氧化物导体层具有导体特征， 可 有效减小数据线的电阻且最大程度降低数据线发生断线的几率。
需要说明的是,本发明中采用的构图工艺为现有技术中通常采用的曝光、 显影、 刻蚀和剥离等工艺。
另外， 本发明实施例还提供一种显示装置， 包括上述阵列基板， 所述显 示装置可以为： 液晶面板、 电子纸、 OLED面板、 液晶电视、 液晶显示器、 数码相框、 手机、 平板电脑等任何具有显示功能的产品或部件。
以上所述仅是本发明的示范性实施方式， 而非用于限制本发明的保护范 围， 本发明的保护范围由所附的权利要求确定。

Claims

权利要求书
1、 一种阵列基板， 包括： 氧化物有源层， 其中
所述氧化物有源层包括未经过金属化处理过的半导体区域和经过金属化 处理过的金属氧化物导体区域。
2、如权利要求 1所述的阵列基板，其中所述阵列基板还包括刻蚀阻挡层 和源漏电极层，
所述半导体区域和刻蚀阻挡层的位置相对应；
所述金属氧化物导体区域与所述源漏电极位置相对应。
3、 如权利要求 1或 2所述的阵列基板， 其中所述阵列基板还包括栅极、 栅极绝缘层、 像素电极层和钝化层。
4、如权利要求 1-3任一项所述的阵列基板， 其中所述氧化物有源层包括 InGaZnO, InGaO、 ITZO、 ΑΙΖηΟ 中的至少一种。
5、 一种阵列基板的制作方法， 包括：
形成氧化物有源层的图案， 所述氧化物有源层的图案包括未经过金属化 处理过的半导体区域和经过金属化处理过的金属氧化物导体区域。
6、如权利要求 5所述的制作方法，其中所述形成氧化物有源层的图案包 括：
形成氧化物半导体材料；
在该氧化物半导体材料上形成刻蚀阻挡层的图案；
对氧化物半导体材料中未被刻蚀阻挡层覆盖的部分进行金属化处理， 被 刻蚀阻挡层覆盖的部分形成半导体区域；
形成源漏金属层， 并通过构图工艺同时形成源漏电极的图案和金属氧化 物导体区域。
7、 如权利要求 6 所述的制作方法， 其中所述氧化物半导体材料包括
InGaZnO, InGaO、 ITZO、 ΑΙΖηΟ 中的至少一种。
8、 如权利要求 5-7任一项所述的制作方法， 其中所述金属化处理为在 100-300 °C的还原性气氛中处理 30-120分钟。
9、如权利要求 8所述的制作方法，其中所述还原性气氛包括氢气或含氢 等离子体。
10、 如权利要求 6所述的制作方法， 其中所述金属氧化物导体区域与源 漏电极的位置相对应， 所述半导体区域和刻蚀阻挡层的位置相对应。
11、 一种显示装置， 包括权利要求 1-4任一项所述的阵列基板。
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