WO2016045238A1 - 阵列基板及其制作方法、液晶显示装置 - Google Patents

阵列基板及其制作方法、液晶显示装置 Download PDF

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WO2016045238A1
WO2016045238A1 PCT/CN2015/070024 CN2015070024W WO2016045238A1 WO 2016045238 A1 WO2016045238 A1 WO 2016045238A1 CN 2015070024 W CN2015070024 W CN 2015070024W WO 2016045238 A1 WO2016045238 A1 WO 2016045238A1
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layer
source
drain electrode
metal oxide
oxide semiconductor
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PCT/CN2015/070024
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English (en)
French (fr)
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刘翔
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京东方科技集团股份有限公司
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Priority to US14/771,694 priority Critical patent/US9684217B2/en
Publication of WO2016045238A1 publication Critical patent/WO2016045238A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
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    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous

Definitions

  • the present disclosure relates to the field of display, and in particular to an array substrate, a method of fabricating the same, and a liquid crystal display device.
  • LCD Liquid Crystal Display
  • OLED Organic Light-Emitting Diode
  • LCD flat panel display due to its small size, light weight, thin thickness, low power consumption, no radiation, etc., has been rapidly developed in recent years, occupying a dominant position in the current flat panel display market, in various large Small and medium-sized products have been widely used, covering almost all major electronic products in today's information society, such as LCD TVs, computers, mobile phones, PDAs, GPS, car displays, projection displays, camcorders, digital cameras, electronic watches, calculators. , electronic instruments, meters, public display and unreal display.
  • each liquid crystal pixel in the LCD display is driven by a Thin Film Transistor (TFT) integrated in the TFT array substrate, and then combined with a peripheral driving circuit to realize image display; active matrix driving In an OLED (Active Matrix Organic Light Emission Display, AMOLED) display, a corresponding OLED pixel in an OLED panel is driven by a TFT in a TFT substrate, and then a peripheral driving circuit is used to realize image display.
  • the TFT is a switch for controlling light emission, which is the key to realize the large size of the liquid crystal display and the OLED display, and is directly related to the development direction of the high performance flat panel display.
  • TFTs which have been industrialized mainly include amorphous silicon TFTs, polycrystalline silicon TFTs, single crystal silicon TFTs, etc., and amorphous silicon TFTs are most used for preparing array substrates in flat panel displays.
  • metal oxide TFTs have emerged, which have the advantages of high carrier mobility, so that the TFT can be made small, so that the resolution of the flat panel display is further improved. High, the display effect is better; at the same time, the use of metal oxide TFT also has the advantages of less characteristic unevenness, low material and process cost, low process temperature, available coating process, high transparency and large band gap. Therefore, the application of metal oxide TFTs to flat panel displays has attracted industry attention.
  • a metal oxide TFT is generally used in a six-time photolithography process, mainly because the metal oxide semiconductor layer is etched away when the source and the drain metal electrode are etched. Therefore, an etch barrier layer is generally added to the metal oxide semiconductor layer. In order to protect the metal oxide semiconductor layer from being etched by the source and drain metal etching solution during etching of the source and drain metal electrodes. In general, the smaller the number of masks used in fabricating a metal oxide TFT, the higher the production efficiency and the lower the cost.
  • an embodiment of the present disclosure provides an array substrate, a manufacturing method thereof, and a liquid crystal display device.
  • An embodiment of the present disclosure is: a method of fabricating an array substrate, comprising the steps of:
  • Step 1 sequentially forming a metal oxide semiconductor layer and an etch barrier layer on the gate insulating layer;
  • Step 2 performing a patterning process on the etching barrier layer to form a source electrode contact region via hole, a drain electrode contact region via hole, and an isolation region;
  • Step 3 forming a source/drain electrode layer on the etch barrier layer completing step 2;
  • Step 4 in the process of forming a source/drain electrode pattern by performing a patterning process on the source/drain electrode layer, removing a portion of the metal oxide semiconductor layer corresponding to the isolation region, so that the metal oxide semiconductor layer is The corresponding position of the isolation area is disconnected.
  • isolation region surrounds the source and drain electrode patterns.
  • the present disclosure also provides an array substrate, including:
  • a metal oxide semiconductor layer and an etch barrier layer sequentially formed on the gate insulating layer
  • the etch barrier layer is formed with an isolation region surrounding the source/drain electrode pattern, the metal oxide semiconductor layer being disconnected at a position corresponding to the isolation region.
  • the present disclosure also provides a display device including the above array substrate.
  • the beneficial effects of the present disclosure are: according to the method of fabricating an array substrate according to an embodiment of the present disclosure, after the metal oxide semiconductor layer is formed on the gate insulating layer, the etching stopper layer is directly formed on the metal oxide semiconductor layer, that is, The metal oxide semiconductor layer is not etched before the formation of the etch barrier layer, thereby facilitating a good interface between the metal oxide semiconductor layer and the etch barrier layer.
  • a patterning process is performed on the etching stopper layer to form a source electrode contact region via hole, a drain electrode contact region via hole, and an isolation region surrounding the source/drain electrode pattern to be formed;
  • the metal oxide semiconductor corresponding to the isolation region is removed by a patterning process to isolate the metal oxide semiconductor layer from the metal oxide semiconductor layer.
  • the corresponding position of the zone is broken.
  • the method of fabricating the array substrate according to the embodiments of the present disclosure can not only reduce one lithography process, but also avoid a large-area etching process on the etch barrier layer, thereby improving production efficiency.
  • FIG. 1 is a schematic structural view of an array substrate according to an embodiment of the present disclosure
  • FIG. 2 is a cross-sectional view of the array substrate formed along the A-B direction of FIG. 1 according to an embodiment of the present disclosure
  • FIG. 3 is a cross-sectional view of the array substrate formed along the A-B direction of FIG. 1 according to an embodiment of the present disclosure
  • FIG. 4 is a cross-sectional view of the array substrate formed along the A-B direction of FIG. 1 according to an embodiment of the present disclosure
  • FIG. 5 is a cross-sectional view of the array substrate formed along the A-B direction of FIG. 1 according to an embodiment of the present disclosure
  • FIG. 6 is a cross-sectional view of the array substrate formed along the AB direction of FIG. 1 in accordance with an embodiment of the present disclosure.
  • the present disclosure provides a method of fabricating an array substrate, the method comprising the steps of:
  • Step 101 sequentially forming a metal oxide semiconductor layer and an etch barrier layer on the gate insulating layer;
  • Step 102 performing a patterning process on the etch barrier layer to form a source electrode contact region via hole, a drain electrode contact region via hole, and an isolation region surrounding the source/drain electrode pattern to be formed;
  • Step 103 forming a source/drain electrode layer on the etch barrier layer of step 102;
  • Step 104 in the process of forming a source/drain electrode pattern by performing a patterning process on the source/drain electrode layer, removing a portion of the metal oxide semiconductor layer corresponding to the isolation region, so that the metal oxide semiconductor layer is The corresponding position of the isolation area is broken.
  • the etching stopper layer is directly formed on the metal oxide semiconductor layer, that is, before the etching stopper layer is formed.
  • the metal oxide semiconductor layer is etched, thereby facilitating a good interface between the metal oxide semiconductor layer and the etch barrier layer.
  • a patterning process is performed on the etching stopper layer to form a source electrode contact region via hole, a drain electrode contact region via hole, and an isolation region surrounding the source/drain electrode pattern to be formed;
  • the metal oxide semiconductor corresponding to the isolation region is removed by a patterning process, so that the metal oxide semiconductor layer is in the isolation region. The corresponding position is broken.
  • the etching barrier layer corresponding to the region outside the source/drain electrode pattern the method of fabricating the array substrate according to the embodiment of the present disclosure, only needs to remove the portion of the metal oxide semiconductor layer corresponding to the isolation region, thereby avoiding large The area is etched by the etch barrier to waste resources.
  • the step 101 further includes a step of forming a gate electrode and a gate insulating layer on the substrate.
  • a gate metal film is formed on the substrate 1, and a gate electrode pattern is formed on the gate metal film by one patterning process.
  • a gate insulating layer 3 is formed on the gate electrode.
  • a metal oxide semiconductor layer 4 and an etching stopper layer 5 on the metal oxide semiconductor layer 4 are formed on the gate insulating layer.
  • the metal oxide semiconductor layer 4 needs to be etched in advance before the etching stopper layer 5 is formed.
  • the metal oxide semiconductor layer 4 is not etched before the etching barrier layer 5 is formed, but the etching stopper layer 5 is directly formed on the metal oxide semiconductor layer 4. This facilitates the formation of a good interface between the metal oxide semiconductor layer and the etch stop layer.
  • the etching stopper layer is subjected to a patterning process to form a source electrode contact region via hole, a drain electrode contact region via hole, and an isolation region surrounding the source/drain electrode pattern to be formed.
  • the isolation region of the source-drain electrode pattern refers to a region surrounding the source-drain electrode pattern and isolated from the source-drain electrode pattern.
  • the patterning process of the etching stopper layer may be performed by etching or the like, and the source electrode contact region via hole, the drain electrode contact region via hole, and the isolation region are formed by a patterning process.
  • a source/drain electrode layer is formed on the etch barrier layer completed in step 102, and utilized.
  • the patterning process forms a source-drain electrode pattern.
  • the patterning process for forming the source-drain electrode pattern can employ an existing etching process.
  • step 104 in the process of forming the source/drain electrode pattern by the patterning process of the source/drain electrode layer, the metal oxide semiconductor corresponding to the isolation region is connected to the metal oxide semiconductor of other regions. This step simultaneously removes a portion of the metal oxide semiconductor layer corresponding to the isolation region by one patterning process to break the metal oxide semiconductor layer at a position corresponding to the isolation region.
  • the step of removing the metal oxide semiconductor layer corresponding to the isolation region by the source-drain electrode etching medium is performed to make the metal oxide
  • the semiconductor layer is disconnected at a position corresponding to the isolation region. Since the position of the metal oxide semiconductor layer corresponding to the isolation region is exposed, the metal oxide semiconductor of the isolation region can be removed by the source/drain electrode etching medium, thereby forming a source isolated from the metal oxide semiconductor layer. Drain electrode pattern.
  • the method of fabricating the array substrate according to the embodiment of the present disclosure only needs to remove the portion of the metal oxide semiconductor layer corresponding to the isolation region, thereby avoiding large-area etching, corresponding to the etch barrier layer of the region other than the source/drain electrode pattern. Waste of resources caused by etching the barrier layer.
  • step 104 the method further includes:
  • Step 105 Form a contact via pattern. That is, after the metal oxide semiconductor layer is disconnected at a position corresponding to the isolation region, the method further includes:
  • a protective layer is formed on the source/drain electrode layer of step 104, and a patterning process is performed on the protective layer to form a contact via pattern for connecting the pixel electrode and the drain electrode.
  • step 105 the method further includes:
  • Step 106 Form a pixel electrode pattern. That is, after the step of forming the protective layer on the source/drain electrode layer of the step 104, the step of forming the contact via pattern for connecting the pixel electrode and the drain electrode by one patterning process further includes:
  • a conductive layer is formed on the protective layer completing step 105, and the conductive layer is subjected to a patterning process to form a pixel electrode pattern.
  • Figure 2-6 shows a flow chart for forming an array substrate.
  • the specific process flow includes:
  • Step 1 sequentially depositing a thickness on the substrate by sputtering or thermal evaporation.
  • Grid metal film The gate metal film may be selected from a metal or an alloy such as Cr, W, Cu, Ti, Ta, Mo, etc., and a gate metal layer composed of a plurality of layers of metal may also satisfy the needs.
  • the gate electrode 2 is formed as shown in FIG.
  • Step 2 Continuously depositing a thickness by a PECVD (plasma enhanced chemical vapor deposition) method on the substrate on which step 1 is completed
  • the gate insulating layer 3, the gate insulating layer 3 may be an oxide, a nitride or an oxynitride compound, wherein the reaction gas corresponding to the silicon oxide may be N 2 O and SiH 4 ; the reaction gas corresponding to the silicon oxynitride may be N 2 O , SiH 4 , NH 3 and N 2 ; the reaction gas corresponding to silicon nitride may be SiH 4 , NH 3 and N 2 or SiH 2 Cl 2 , NH 3 and N 2 .
  • the metal oxide semiconductor layer may be amorphous IGZO, HIZO, IZO, a-InZnO, a-InZnO, ZnO: F, In 2 O 3 :Sn, In 2 O 3 :Mo, Made of Cd 2 SnO 4 , ZnO:Al, TiO 2 :Nb, Cd-Sn-O or other metal oxide, and then deposited by PECVD to a thickness of
  • the etch stop layer 5 the etch stop layer may be an oxide, a nitride or an oxynitride compound, wherein the reaction gas corresponding to the silicon oxide may be N 2 O and SiH 4 ; the reaction gas corresponding to the silicon oxynitride may be N 2 O, SiH 4 , NH 3 and N 2 ; the reaction gas corresponding to silicon nitride may be SiH 4
  • the etching barrier layer may also use Al 2 O 3 or a double-layer barrier structure.
  • the source electrode contact region via 13, the drain electrode contact region via 11, and the isolation region 10 surrounding the source and drain electrode patterns are then formed by a conventional photolithography process, as shown in FIG.
  • Step 3 On the substrate on which the step 2 is completed, the thickness is sequentially deposited by sputtering or thermal evaporation.
  • the source leaks the metal film.
  • the source/drain metal film may be a metal or an alloy such as Cr, W, Cu, Ti, Ta, Mo, etc., and a gate metal layer composed of a plurality of layers of metal may also satisfy the needs.
  • the source electrode 6, the drain electrode 7 and the data line are formed by a common photolithography process, and the dielectric of the drain metal electrode is etched away by etching the source of the metal electrode with the source and drain electrodes in the isolation region 10 corresponding to the source/drain electrode pattern.
  • the location of the metal oxide semiconductor is shown in Figure 4.
  • the metal oxide protective layer 8 may be a single layer of silicon oxide or a composite structure of silicon nitride and silicon oxide, or a three-layer structure of silicon nitride/silicon oxynitride/silicon oxide, wherein oxidation
  • the reaction gas corresponding to silicon may be N 2 O and SiH 4 ;
  • the reaction gas corresponding to silicon oxynitride may be N 2 O, SiH 4 , NH 3 and N 2 ;
  • the reaction gas corresponding to silicon nitride may be SiH 4 , NH 3 And N 2 or SiH 2 Cl 2 , NH 3 and N 2 .
  • a protective layer is formed on the source/drain electrode layer, and the contact via 12 for connecting the pixel electrode and the drain electrode is formed by the patterning process for the protective layer, as shown in FIG.
  • Step 5 depositing the upper thickness by sputtering or thermal evaporation on the substrate on which step 4 is completed a transparent conductive layer
  • the transparent conductive layer may be ITO or IZO, or other transparent metal oxide
  • the transparent conductive layer is formed into a pixel electrode 9 by a photolithography process, and the cross-sectional view thereof is as shown in FIG.
  • the technical scheme for fabricating a metal oxide TFT of the present disclosure adopts five photolithography processes, skillfully designing the structure of the TFT, and reducing the photolithography process by using a common mask, mainly using the pattern of the source and drain layers as a transparent metal oxide.
  • a mask of the semiconductor layer forms a semiconductor layer pattern.
  • This design not only reduces the lithography process, but also avoids the large-area etching process of the etch barrier layer, which is beneficial to improve production efficiency.
  • the etch etch barrier layer is directly deposited after the deposition of the metal oxide semiconductor layer is completed, which is advantageous for forming a good interface and is advantageous for improving the metal oxide semiconductor measurement performance.
  • the present disclosure also provides an array substrate, including:
  • a metal oxide semiconductor layer and an etch barrier layer sequentially formed on the gate insulating layer
  • the etch barrier layer is formed with an isolation region surrounding the source/drain electrode pattern, the metal oxide semiconductor layer being disconnected at a position corresponding to the isolation region.
  • a protective layer is formed on the source/drain electrode layer, and the protective layer is formed with a contact via pattern for connecting the pixel electrode and the drain electrode.
  • a data line is further formed on the etch barrier layer, and the data line is connected to a source in the source/drain electrode pattern.
  • the present disclosure also provides a display device including the above array substrate.
  • the display device uses any of the array substrates as described in the above embodiments.
  • the display device may be any product or component having a display function, such as a liquid crystal panel, an electronic paper, an OLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.
  • the array substrate fabricated according to the above technical solution is a metal oxide semiconductor in which an isolation region is removed by a source/drain electrode etching medium, thereby reducing one photolithography process.
  • the method of fabricating the array substrate according to the embodiment of the present disclosure requires only the portion of the removed metal oxide semiconductor layer corresponding to the isolation region, corresponding to the etch barrier layer of the region other than the source/drain electrode pattern, thereby avoiding large The area is etched by the etch barrier to waste resources.

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Abstract

本公开属于液晶显示领域，公开了一种制作阵列基板的方法、阵列基板及显示装置。该方法包括：步骤101：在栅绝缘层上依次形成金属氧化物半导体层和蚀刻阻挡层；步骤102：对蚀刻阻挡层进行一次构图工艺，形成源电极接触区过孔、漏电极接触区过孔以及隔离区；步骤103：在完成步骤102的蚀刻阻挡层上形成源漏电极层；以及步骤104：在对所述源漏电极层进行一次构图工艺形成源漏电极图案的过程中，去除金属氧化物半导体层与所述隔离区对应的部分，以使所述金属氧化物半导体层在与所述隔离区对应的位置断开，其中所述隔离区围绕在所述源漏电极图案周围。

Description

阵列基板及其制作方法、液晶显示装置
相关申请的交叉引用
本申请主张在2014年09月22日在中国提交的中国专利申请号No.201410486673.2的优先权，其全部内容通过引用包含于此。
技术领域
本公开涉及显示领域，特别是涉及一种阵列基板及其制作方法、液晶显示装置。
背景技术
随着科学技术的发展，平板显示器已取代笨重的CRT显示器，日益深入人们的日常生活中。目前，常用的平板显示器包括LCD(Liquid Crystal Display：液晶显示器)和OLED(Organic Light-Emitting Diode：有机发光二极管)显示器。尤其是LCD平板显示器，由于其具有体积小、重量轻、厚度薄、功耗低、无辐射等特点，近年来得到了迅速的发展，在当前的平板显示器市场中占据了主导地位，在各种大中小尺寸的产品上得到了广泛的应用，几乎涵盖了当今信息社会的主要电子产品，如液晶电视、电脑、手机、PDA、GPS、车载显示、投影显示、摄像机、数码相机、电子手表、计算器、电子仪器、仪表、公共显示和虚幻显示等多个领域。
在成像过程中，LCD显示器中每一液晶像素点都由集成在TFT阵列基板中的薄膜晶体管(Thin Film Transistor：简称TFT)来驱动，再配合外围驱动电路，实现图像显示；有源矩阵驱动式OLED(Active Matrix Organic Light Emission Display，简称AMOLED)显示器中由TFT基板中的TFT驱动OLED面板中对应的OLED像素，再配合外围驱动电路，实现图像显示。在上述显示器中，TFT是控制发光的开关，是实现液晶显示器和OLED显示器大尺寸的关键，直接关系到高性能平板显示器的发展方向。
在现有平板显示器生产技术中，已实现产业化的TFT主要有非晶硅TFT、多晶硅TFT、单晶硅TFT等，用于制备平板显示器中阵列基板使用最多的是非晶硅TFT。目前，随着技术的发展，出现了金属氧化物TFT，其具有载流子迁移率高的优点，使得TFT可以做的很小，从而使平板显示器的分辨率更 高，显示效果更好；同时采用金属氧化物TFT还具有特性不均现象少、材料和工艺成本低、工艺温度低、可利用涂布工艺、透明率高、带隙大等优点。因此，将金属氧化物TFT应用于平板显示器备受业界关注。
目前，制作金属氧化物TFT一般采用六次光刻工艺，主要是因为在刻蚀源漏金属电极时会腐蚀掉金属氧化物半导体层，因此一般在金属氧化物半导体层上面增加一次蚀刻阻挡层，以便保护金属氧化物半导体层在刻蚀源漏金属电极的过程中不被源漏金属的刻蚀液腐蚀。一般来说，在制作金属氧化物TFT过程中所用掩模板的数量越少，生产效率越高，成本就越低。
发明内容
为了解决现有制作金属氧化物TFT过程中效率较低，成本较高的问题，本公开的实施例提供了一种阵列基板及其制作方法、液晶显示装置。
本公开的实施例是：一种制作阵列基板的方法，包括以下步骤：
步骤1：在栅绝缘层上依次形成金属氧化物半导体层和蚀刻阻挡层；
步骤2：对蚀刻阻挡层进行一次构图工艺，形成源电极接触区过孔、漏电极接触区过孔以及隔离区；
步骤3：在完成步骤2的蚀刻阻挡层上形成源漏电极层；以及
步骤4：在对所述源漏电极层进行一次构图工艺形成源漏电极图案的过程中，去除金属氧化物半导体层与所述隔离区对应的部分，以使所述金属氧化物半导体层在与所述隔离区对应的位置断开，
其中所述隔离区围绕在所述源漏电极图案周围。
本公开还提供了一种阵列基板，包括：
依次形成在基板上的栅电极、栅绝缘层；
依次形成在栅绝缘层上的金属氧化物半导体层和蚀刻阻挡层；
形成在所述蚀刻阻挡层上的源漏电极层，
其中所述蚀刻阻挡层形成有围绕源漏电极图案的隔离区，所述金属氧化物半导体层在与所述隔离区对应的位置断开。
本公开还提供了一种显示装置，包括上述的阵列基板。
本公开的有益效果是：根据本公开实施例的制作阵列基板的方法，在完成将金属氧化物半导体层形成在栅绝缘层上后，直接将蚀刻阻挡层形成在金属氧化物半导体层上，即在形成蚀刻阻挡层之前不对金属氧化物半导体层进行刻蚀，由此有利于金属氧化物半导体层与蚀刻阻挡层之间形成良好的界面。 进一步地，根据本公开的实施例，对蚀刻阻挡层进行构图工艺，形成源电极接触区过孔、漏电极接触区过孔以及围绕待形成的源漏电极图案的隔离区；然后，在对所述源漏电极层进行一次构图工艺形成源漏电极图案的过程中，通过一次构图工艺去除与所述隔离区对应部分的金属氧化物半导体，以使所述金属氧化物半导体层在与所述隔离区对应的位置断开。根据本公开实施例的制作阵列基板的方法，仅需要去除金属氧化物半导体层与所述隔离区相对应的部分，，从而避免了大面积刻蚀蚀刻阻挡层造成的资源浪费。
由此，根据本公开实施例的制作阵列基板的方法，不仅可以减少一次光刻工艺，还可避免对蚀刻阻挡层进行大面积的刻蚀工艺，从而提高了生产效率。
附图说明
图1为根据本公开一个实施例的阵列基板的结构示意图；
图2为根据本公开一个实施例的完成第一次构图工艺所形成的阵列基板沿图1中A-B方向的横截面示意图；
图3为根据本公开一个实施例的完成第二次构图工艺所形成的阵列基板沿图1中A-B方向的横截面示意图；
图4为根据本公开一个实施例的完成第三次构图工艺所形成的阵列基板沿图1中A-B方向的横截面示意图；
图5为根据本公开一个实施例的完成第四次构图工艺所形成的阵列基板沿图1中A-B方向的横截面示意图；
图6为根据本公开一个实施例的完成第五次构图工艺所形成的阵列基板沿图1中AB方向的横截面示意图。
具体实施方式
为使本公开要解决的技术问题、技术方案和优点更加清楚，下面将结合附图及具体实施例进行详细描述。
本公开提供了一种制作阵列基板的方法，该方法包括如下步骤：
步骤101：在栅绝缘层上依次形成金属氧化物半导体层和蚀刻阻挡层；
步骤102：对蚀刻阻挡层进行一次构图工艺，形成源电极接触区过孔、漏电极接触区过孔以及围绕待形成的源漏电极图案的隔离区；
步骤103：在完成步骤102的蚀刻阻挡层上形成源漏电极层；
步骤104：在对所述源漏电极层进行一次构图工艺形成源漏电极图案的过程中，去除金属氧化物半导体层与所述隔离区对应的部分，以使所述金属氧化物半导体层在与所述隔离区对应的位置断开。
根据本公开实施例的制作阵列基板的方法，在完成将金属氧化物半导体层形成在栅绝缘层上后，直接将蚀刻阻挡层形成在金属氧化物半导体层上，即在形成蚀刻阻挡层之前不对金属氧化物半导体层进行刻蚀，由此有利于金属氧化物半导体层与蚀刻阻挡层之间形成良好的界面。进一步地，根据本公开的实施例，对蚀刻阻挡层进行构图工艺形成源电极接触区过孔、漏电极接触区过孔以及围绕待形成的源漏电极图案的隔离区；然后，在对所述源漏电极层进行一次构图工艺形成源漏电极图案的过程中，通过一次构图工艺去除与所述隔离区对应部分的金属氧化物半导体，以使所述金属氧化物半导体层在与所述隔离区对应的位置断开。即，对应于源漏电极图案之外区域的蚀刻阻挡层，根据本公开实施例的制作阵列基板的方法，仅需要去除金属氧化物半导体层与所述隔离区相对应的部分，从而避免了大面积刻蚀蚀刻阻挡层造成的资源浪费。
步骤101之前还包括在基板上形成栅电极和栅绝缘层的步骤，如图2和3所示，在基板1上形成栅金属膜，对所述栅金属膜通过一次构图工艺形成栅电极图案。在形成栅电极2之后，在所述栅电极上形成栅绝缘层3。形成栅绝缘层3之后，在栅绝缘层上形成金属氧化物半导体层4和位于金属氧化物半导体层4上的蚀刻阻挡层5。现有工艺中，在形成蚀刻阻挡层5前，需要预先对金属氧化物半导体层4进行刻蚀。即，在形成金属氧化物半导体层4后，需要对其进行一次光刻操作，然后再在经过光刻的金属氧化物半导体层4上形成蚀刻阻挡层5。而根据本公开实施例的技术方案中，在形成蚀刻阻挡层5前不对金属氧化物半导体层4进行刻蚀，而是直接在金属氧化物半导体层4上形成蚀刻阻挡层5。由此有利于金属氧化物半导体层与蚀刻阻挡层之间形成良好的界面。
步骤102中，对蚀刻阻挡层进行一次构图工艺，形成源电极接触区过孔、漏电极接触区过孔以及围绕待形成的源漏电极图案的隔离区。其中，源漏电极图案的隔离区是指围绕在源漏电极图案周围并与源漏电极图案相隔离的区域。该步骤对蚀刻阻挡层进行构图工艺可以采用刻蚀等构图工艺，通过构图工艺形成源电极接触区过孔、漏电极接触区过孔以及隔离区。
步骤103中，在在完成步骤102的蚀刻阻挡层上形成源漏电极层，利用 构图工艺形成源漏电极图案。形成源漏电极图案的构图工艺可以采用现有的刻蚀工艺。
步骤104中，在对所述源漏电极层进行一次构图工艺形成源漏电极图案的过程中，对应于上述隔离区的金属氧化物半导体是与其他区域的金属氧化物半导体连接在一起的。该步骤通过一次构图工艺同时去除金属氧化物半导体层与所述隔离区对应的部分，以使所述金属氧化物半导体层在与所述隔离区对应的位置断开。
可选的，该步骤在通过一次构图工艺形成源漏电极图案的过程中，是通过源漏电极刻蚀介质去除金属氧化物半导体层与所述隔离区对应的部分，以使所述金属氧化物半导体层在与所述隔离区对应的位置断开。由于金属氧化物半导体层对应于隔离区的位置被暴露出来，可以通过源漏电极刻蚀介质去除隔离区的金属氧化物半导体，由此此时就可以形成与金属氧化物半导体层相隔离的源漏电极图案。对应于源漏电极图案之外区域的蚀刻阻挡层，根据本公开实施例的制作阵列基板的方法仅需要去除金属氧化物半导体层与所述隔离区相对应的部分，从而避免了大面积刻蚀蚀刻阻挡层造成的资源浪费。
在步骤104之后还包括：
步骤105：形成接触过孔图案。即在使所述金属氧化物半导体层在与所述隔离区对应的位置断开之后，还包括：
在完成步骤104的源漏电极层上形成保护层，对所述保护层进行一次构图工艺形成用于连接像素电极和所述漏电极的接触过孔图案。
在步骤105之后还包括：
步骤106：形成像素电极图案。即，在完成步骤104的源漏电极层上形成保护层，通过一次构图工艺形成用于连接像素电极和所述漏电极的接触过孔图案的步骤之后进一步包括：
在完成步骤105的保护层上形成导电层，对所述导电层进行一次构图工艺形成像素电极图案。
图2-6给出了形成阵列基板的流程图，具体工艺流程包括：
步骤1、在基板上采用溅射或热蒸发的方法依次沉积厚度约为
Figure PCTCN2015070024-appb-000001
Figure PCTCN2015070024-appb-000002
的栅金属膜。栅金属膜可以选用Cr、W、Cu、Ti、Ta、Mo等金属或合金，由多层金属组成的栅金属层也能满足需要。通过一次普通的光刻工艺后，形成栅电极2，如图2所示。
步骤2、在完成步骤1的基板上通过PECVD(等离子体增强化学气相沉 积法)方法连续沉积厚度为
Figure PCTCN2015070024-appb-000003
的栅绝缘层3，栅绝缘层3可以选用氧化物、氮化物或者氧氮化合物，其中氧化硅对应的反应气体可以为N2O和SiH4；氮氧化硅对应的反应气体可以为N2O、SiH4、NH3和N2；氮化硅对应的反应气体可以为SiH4、NH3和N2或SiH2Cl2、NH3和N2。然后在栅绝缘层上通过溅射或热蒸发的方法沉积上厚度约为
Figure PCTCN2015070024-appb-000004
的金属氧化物半导体层4，金属氧化物半导体层可以是采用非晶IGZO、HIZO、IZO、a-InZnO、a-InZnO、ZnO：F、In2O3：Sn、In2O3：Mo、Cd2SnO4、ZnO：Al、TiO2：Nb、Cd-Sn-O或其他金属氧化物制成，接着再通过PECVD方法沉积厚度为
Figure PCTCN2015070024-appb-000005
的蚀刻阻挡层5，蚀刻阻挡层可以选用氧化物、氮化物或者氧氮化合物，其中氧化硅对应的反应气体可以为N2O和SiH4；氮氧化硅对应的反应气体可以为N2O、SiH4、NH3和N2；氮化硅对应的反应气体可以为SiH4、NH3和N2或SiH2Cl2、NH3和N2。蚀刻阻挡层也可以使用Al2O3，或者双层的阻挡结构。然后通过一次普通的光刻工艺后形成源电极接触区过孔13、漏电极接触区过孔11及围绕在源漏电极图案周围的隔离区10，如图3所示。
步骤3、在完成步骤2的基板上采用溅射或热蒸发的方法依次沉积上厚度为
Figure PCTCN2015070024-appb-000006
的源漏金属膜。源漏金属膜可以选用Cr、W、Cu、Ti、Ta、Mo等金属或合金，由多层金属组成的栅金属层也能满足需要。通过一次普通的光刻工艺形成源电极6、漏电极7及数据线，在刻蚀源漏金属电极时利用刻蚀源漏金属电极的介质刻蚀掉围绕在源漏电极图案的隔离区10对应位置的金属氧化物半导体，如图4所示。
步骤4、在完成步骤3的基板上通过PECVD方法沉积厚度为
Figure PCTCN2015070024-appb-000007
Figure PCTCN2015070024-appb-000008
的金属氧化物保护层8，金属氧化物保护层8可以选用单层的氧化硅或氮化硅与氧化硅的复合结构，或者氮化硅/氮氧化硅/氧化硅的三层结构，其中氧化硅对应的反应气体可以为N2O和SiH4；氮氧化硅对应的反应气体可以为N2O、SiH4、NH3和N2；氮化硅对应的反应气体可以为SiH4、NH3和N2或SiH2Cl2、NH3和N2。在所述源漏电极层上形成保护层，对所述保护层通过一次构图工艺形成用于连接像素电极和所述漏电极的接触过孔12，如图5所示。
步骤5、在完成步骤4的基板上通过溅射或热蒸发的方法沉积上厚度
Figure PCTCN2015070024-appb-000009
透明导电层，透明导电层可以是ITO或者IZO，或者其他的透明金属氧化物；对透明导电层通过一次光刻工艺形成像素电极9，其截面图如图6所示
根据本公开的一个实施例，在完成步骤5之后形成的阵列基板的横截面 如图1所示。
本公开制作金属氧化物TFT的技术方案采用了五次光刻工艺，巧妙地设计TFT的结构，使用普通的掩膜版减少一次光刻工艺，主要是使用源漏极层的图案作为透明金属氧化物半导体层的掩膜版，形成半导体层图案。这样设计不但减少一次光刻工艺，同时还还避免了蚀刻阻挡层的大面积刻蚀工艺，有利于提高生产效率。根据本公开的实施例，完成金属氧化物半导体层的沉积之后直接沉积刻蚀蚀刻阻挡层，这样有利于形成良好的界面，有利于提升金属氧化物半导体测性能。
本公开还提供了一种阵列基板，包括：
依次形成在基板上的栅电极、栅绝缘层；
依次形成在栅绝缘层上的金属氧化物半导体层和蚀刻阻挡层；
形成在所述蚀刻阻挡层上的源漏电极层，
其中所述蚀刻阻挡层形成有围绕源漏电极图案的隔离区，所述金属氧化物半导体层在与所述隔离区对应的位置断开。
可选的，在所述源漏电极层上形成有保护层，所述保护层形成有用于连接像素电极和所述漏电极的接触过孔图案。
可选的，所述蚀刻阻挡层上还形成有数据线，所述数据线与所述源漏电极图案中的源极连接。
本公开还提供了一种显示装置，包括上述阵列基板。该显示装置使用了如上述实施例所述的任意一种阵列基板。所述显示装置可以为：液晶面板、电子纸、OLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
根据上述技术方案制作的阵列基板是通过源漏电极刻蚀介质去除隔离区的金属氧化物半导体，从而减少了一次光刻工艺。而且，对应于源漏电极图案之外区域的蚀刻阻挡层，根据本公开实施例的制作阵列基板的方法仅需要去除的金属氧化物半导体层与所述隔离区相对应的部分，从而避免了大面积刻蚀蚀刻阻挡层造成的资源浪费。
以上所述仅是本公开的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本公开原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视本公开的保护范围。

Claims (10)

  1. 一种制作阵列基板的方法，包括以下步骤：
    步骤101：在栅绝缘层上依次形成金属氧化物半导体层和蚀刻阻挡层；
    步骤102：对蚀刻阻挡层进行一次构图工艺，形成源电极接触区过孔、漏电极接触区过孔以及隔离区；
    步骤103：在完成步骤102的蚀刻阻挡层上形成源漏电极层；以及
    步骤104：在对所述源漏电极层进行一次构图工艺形成源漏电极图案的过程中，去除金属氧化物半导体层与所述隔离区对应的部分，以使所述金属氧化物半导体层在与所述隔离区对应的位置断开，
    其中所述隔离区围绕在所述源漏电极图案周围。
  2. 根据权利要求1所述的方法，其中在对所述源漏电极层进行一次构图工艺形成源漏电极图案的过程中，通过源漏电极刻蚀介质去除金属氧化物半导体层与所述隔离区对应的部分。
  3. 根据权利要求1或2所述的方法，其中在栅绝缘层上依次形成金属氧化物半导体层和蚀刻阻挡层的步骤之前，还包括：
    在基板上形成栅金属膜，通过一次构图工艺形成栅电极图案；
    在所述栅电极上形成所述栅绝缘层；
    在所述栅绝缘层上形成所述金属氧化物半导体层，以及
    在所述金属氧化物半导体层上形成所述蚀刻阻挡层。
  4. 根据权利要求1-3任一项所述的方法，其中所述形成源漏电极层的步骤进一步包括：
    在完成步骤102的蚀刻阻挡层上形成金属膜，对所述金属膜进行一次构图工艺形成源电极图案、漏电极图案和数据线图案。
  5. 根据权利要求1-4任一项所述的方法，其中在完成步骤104之后，还包括：
    步骤105：在完成步骤104的源漏电极层上形成保护层，通过一次构图工艺形成用于连接像素电极和所述漏电极的接触过孔图案。
  6. 根据权利要求5所述的方法，其中在完成步骤105之后还包括：
    步骤106：在完成步骤105的保护层上形成导电层，对所述导电层进行一次构图工艺形成像素电极图案。
  7. 一种阵列基板，包括：
    依次形成在基板上的栅电极、栅绝缘层；
    依次形成在栅绝缘层上的金属氧化物半导体层和蚀刻阻挡层；
    形成在所述蚀刻阻挡层上的源漏电极层，
    其中所述蚀刻阻挡层形成有围绕源漏电极图案的隔离区，所述金属氧化物半导体层在与所述隔离区对应的位置断开。
  8. 根据权利要求7所述的阵列基板，其中在所述源漏电极层上形成有保护层，所述保护层形成有用于连接像素电极和所述漏电极的接触过孔图案。
  9. 根据权利要求7或8所述的阵列基板，其中所述蚀刻阻挡层上还形成有数据线，所述数据线与所述源漏电极图案中的源极连接。
  10. 一种显示装置，包括根据权利要求7-9任何一项所述的阵列基板。
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