WO2017028298A1 - Substrat de matrice de filtres colorés et panneau d'affichage à cristaux liquides - Google Patents

Substrat de matrice de filtres colorés et panneau d'affichage à cristaux liquides Download PDF

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Publication number
WO2017028298A1
WO2017028298A1 PCT/CN2015/087619 CN2015087619W WO2017028298A1 WO 2017028298 A1 WO2017028298 A1 WO 2017028298A1 CN 2015087619 W CN2015087619 W CN 2015087619W WO 2017028298 A1 WO2017028298 A1 WO 2017028298A1
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WIPO (PCT)
Prior art keywords
color
layer
color filter
metal layer
array substrate
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Application number
PCT/CN2015/087619
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English (en)
Chinese (zh)
Inventor
叶岩溪
Original Assignee
深圳市华星光电技术有限公司
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Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to JP2018507732A priority Critical patent/JP6564526B2/ja
Priority to US14/904,952 priority patent/US9568654B1/en
Priority to EA201890517A priority patent/EA034149B1/ru
Priority to KR1020187007111A priority patent/KR102032488B1/ko
Priority to GB1802130.3A priority patent/GB2557485B/en
Publication of WO2017028298A1 publication Critical patent/WO2017028298A1/fr

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a color filter array substrate and a liquid crystal display panel.
  • BCS black Column Space
  • the technology uses black materials.
  • the effect of using the black material is on the periphery, and the BM can be directly replaced by the black material to provide a light-shielding effect, and the other function is to support the thickness of the box in the AA area.
  • the shading of the gate and data in the AA area is achieved by relying on color resist stacking and metal interaction.
  • the color resistance overlap is generally the overlap of red and blue, because the spectrum of the two colors does not intersect, this light effect is better.
  • IPS technology uses a layer of planarization (PFA) to flatten the bumps created by the color-resistance overlap.
  • PFA planarization
  • BCS/BM in HVA mode The less technology creates a problem of four-sided protrusions where the color resistance overlaps. In the process of PI coating and liquid crystal deposition, the four-sided raised retaining wall may cause uneven PI and liquid crystal flow, thus affecting display effect.
  • An object of the present invention is to provide a color filter array substrate and a liquid crystal display panel, which are intended to solve the BCS/BM in the HVA mode existing in the prior art.
  • the less technology creates a problem of four-sided protrusions where the color resistance overlaps.
  • the four-sided raised retaining wall may cause uneven PI and liquid crystal flow, thus affecting The problem that shows the effect.
  • a color filter array substrate wherein the color filter array substrate comprises:
  • the first metal layer disposed over the glass substrate, the first metal layer comprising a scan line, and a gate of the thin film field effect transistor;
  • An insulating layer disposed above the first metal layer
  • An active layer disposed above the insulating layer
  • An ohmic contact layer disposed above the two ends of the active layer
  • the second metal layer disposed above the ohmic contact layer, the second metal layer comprising a data line, a source and a drain of the thin film field effect transistor;
  • a first passivation layer disposed over the second metal layer for isolating the second metal layer and the color filter layer;
  • the color filter layer disposed above the first passivation layer, the color filter layer comprising a first color resist, a second color resist, and a third color resist arranged in sequence;
  • a second passivation layer disposed above the color filter layer for isolating the color filter layer and the pixel electrode layer;
  • a pixel electrode layer disposed above the second passivation layer
  • a channel is opened at a color-resistance overlapping position of the color filter layer, and a common electrode line is disposed on the first metal layer corresponding to the channel in the Y-axis direction to achieve shading; in the X-axis direction, Providing a metal line on the second metal layer corresponding to the channel to achieve light shielding; the color resistance overlapping position is an overlapping area of adjacent color resistance; the color resistance overlapping position is red color resistance and blue The color resistance overlaps, the red color resistance and the green color resistance overlap, or the blue color resistance and the green color resistance overlap.
  • the metal line is an extension of the drain electrode line.
  • the channels are respectively opened at a color resistance overlapping position in the Y-axis direction.
  • the channels are respectively opened at the color resistance overlapping position in the X-axis direction.
  • the color filter array substrate comprising:
  • the first metal layer disposed over the glass substrate, the first metal layer comprising a scan line, and a gate of the thin film field effect transistor;
  • An insulating layer disposed above the first metal layer
  • An active layer disposed above the insulating layer
  • An ohmic contact layer disposed above the two ends of the active layer
  • the second metal layer disposed above the ohmic contact layer, the second metal layer comprising a data line, a source and a drain of the thin film field effect transistor;
  • a first passivation layer disposed over the second metal layer for isolating the second metal layer and the color filter layer;
  • the color filter layer disposed above the first passivation layer, the color filter layer comprising a first color resist, a second color resist, and a third color resist arranged in sequence;
  • a second passivation layer disposed above the color filter layer for isolating the color filter layer and the pixel electrode layer;
  • a pixel electrode layer disposed above the second passivation layer
  • a channel is opened at a color-resistance overlapping position of the color filter layer, and a common electrode line is disposed on the first metal layer corresponding to the channel to achieve light shielding; the color resistance overlapping position is adjacent The overlapping area of the color resistance.
  • the channels are respectively opened at a color resisting overlapping position in the Y-axis direction.
  • the channels are respectively opened at a color resisting overlapping position in the X-axis direction, and a metal line is disposed on the second metal layer corresponding to the channel to realize Shading.
  • the metal line is an extension of the drain electrode line.
  • the color resisting overlap position is a red color resist and a blue color resist overlap, a red color resist and a green color resist overlap, or, a blue color resist and a green color The color resistance overlaps.
  • a color filter array substrate comprising:
  • the first metal layer disposed over the glass substrate, the first metal layer comprising a scan line, and a gate of the thin film field effect transistor;
  • An insulating layer disposed above the first metal layer
  • An active layer disposed above the insulating layer
  • An ohmic contact layer disposed above the two ends of the active layer
  • the second metal layer disposed above the ohmic contact layer, the second metal layer comprising a data line, a source and a drain of the thin film field effect transistor;
  • a first passivation layer disposed over the second metal layer for isolating the second metal layer and the color filter layer;
  • the color filter layer disposed above the first passivation layer, the color filter layer comprising a first color resist, a second color resist, and a third color resist arranged in sequence;
  • a second passivation layer disposed above the color filter layer for isolating the color filter layer and the pixel electrode layer;
  • a pixel electrode layer disposed above the second passivation layer
  • a channel is formed at a color resisting overlap position of the color filter layer, and a metal line is disposed on the second metal layer corresponding to the channel to achieve light shielding; the color resisting overlap position is adjacent color The overlapping area of the resistance.
  • the metal line is an extension of the drain electrode line.
  • the channels are respectively opened at a color resistance overlapping position in the X-axis direction.
  • the width of the metal line is greater than or equal to the width of the channel.
  • the color resisting overlap position is a red color resist and a blue color resist overlap, a red color resist and a green color resist overlap, or, a blue color resist and a green color The color resistance overlaps.
  • a liquid crystal display panel comprising the color filter array substrate described above.
  • the present invention changes the structure of the color resist stack without increasing the planarization layer to increase the flowability of PI and liquid crystal. That is, the channel is dug in the place where the color filter of the color filter layer overlaps. At this time, since there is only one layer of color resistance at the channel, it cannot function as a light blocking, and there is a risk of light leakage. At this time, the present invention is in the Y-axis direction. A common electrode line is disposed on the first metal layer corresponding to the channel, and a metal line is disposed on the second metal layer corresponding to the channel in an X-axis direction to shield light leakage therein. The embodiment of the invention not only effectively shields light leakage, but also increases the flowability of PI and liquid crystal.
  • FIG. 1 is a schematic structural diagram of a color filter array substrate according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural diagram of a shielding channel using a common electrode line according to an embodiment of the present invention
  • FIG. 3 is a schematic structural diagram of adding a metal wire shielding channel at a drain electrode according to an embodiment of the present invention.
  • the present invention changes the structure of the color resist stack to increase the flowability of the PI and the liquid crystal without increasing the planarization layer. That is, the channel is dug in the place where the color filter of the color filter layer overlaps. At this time, since there is only one layer of color resistance at the channel, it cannot function as a light blocking, and there is a risk of light leakage. At this time, the present invention is in the Y-axis direction. A common electrode line is disposed on the first metal layer corresponding to the channel, and a metal line is disposed on the second metal layer corresponding to the channel in an X-axis direction to shield light leakage therein.
  • FIG. 1 is a schematic structural diagram of a color filter array substrate according to an embodiment of the present invention; for convenience of description, only parts related to the embodiment of the present invention are shown.
  • the color filter array substrate comprises: a glass substrate 101; a first metal layer 102, an insulating layer 103, an active layer 104, an ohmic contact layer 105, a second metal layer 106, and a first passivation.
  • the first metal layer 102 is disposed above the glass substrate 101, the first metal layer 102 includes a scan line, and a gate of the thin film field effect transistor; the insulating layer 103 is disposed on the first metal layer 102.
  • the active layer 104 is disposed above the insulating layer 103 for conducting the charge of the source to the drain when the first metal layer 102 is opened;
  • the ohmic contact layer 105 is disposed at Above the two ends of the active layer 104, the contact resistance of the second metal layer 106 and the active layer 104 is made smaller and easier to conduct;
  • the second metal layer 106 is disposed on the ohm Above the contact layer 105, the second metal layer 106 includes a data line, a source and a drain of the thin film field effect transistor;
  • the first passivation layer 107 is disposed above the second metal layer 106 for isolating the The second metal layer 106 and the color filter layer 108 are disposed above the first passivation layer 107.
  • the color filter layer 108 includes a first color resist arranged in sequence, and a second Color resistance and third color resistance; the second passivation layer 109 is disposed in the color Over the light absorbing layer 108 for isolating the color filter layer 108 and the pixel electrode layer 110; the pixel electrode layer 110 is disposed over the second passivation layer 109.
  • FIG. 2 is a schematic structural diagram of a shielding channel using a common electrode line according to an embodiment of the present invention
  • a channel 111 is opened at a color-resistance overlapping position of the color filter layer 108, and the channel 111 is corresponding to the channel 111.
  • a common electrode line 112 is disposed on a metal layer 102 to achieve light shielding; the color resisting overlap position is an overlapping area of adjacent color resists.
  • the channels 111 are respectively opened at the color resistance overlapping positions in the Y-axis direction.
  • a common electrode line 112 is disposed on the first metal layer 102 corresponding to the channel 111 to achieve light shielding. That is, in the data line direction, the width of the common electrode line corresponding to the channel 111 is widened to achieve light shielding.
  • the width of the common electrode line corresponding to the channel is greater than or equal to the width of the channel.
  • the color resisting overlap position may be that the red color resist and the blue color resist overlap, the red color resist and the green color resist overlap, or the blue color resist and the green color resist overlap.
  • the red color resistance and the blue color resistance overlap, the color resistance of the excavation channel may be blue color resistance, or the red color resistance may be dug out of the channel.
  • FIG. 1 and FIG. 3 are schematic diagrams showing the structure of adding a metal wire shielding channel at the drain electrode according to an embodiment of the present invention.
  • the color filter array substrate comprises: a glass substrate 101; a first metal layer 102, an insulating layer 103, an active layer 104, an ohmic contact layer 105, a second metal layer 106, and a first passivation layer 107. a color filter layer 108, a second passivation layer 109, and a pixel electrode layer 110.
  • the first metal layer 102 is disposed above the glass substrate 101, the first metal layer 102 includes a scan line, and a gate of the thin film field effect transistor; the insulating layer 103 is disposed on the first metal layer 102.
  • the active layer 104 is disposed above the insulating layer 103 for conducting the charge of the source to the drain when the first metal layer 102 is opened;
  • the ohmic contact layer 105 is disposed at Above the two ends of the active layer 104, the contact resistance of the second metal layer 106 and the active layer 104 is made smaller and easier to conduct;
  • the second metal layer 106 is disposed on the ohm Above the contact layer 105, the second metal layer 106 includes a data line, a source and a drain of the thin film field effect transistor;
  • the first passivation layer 107 is disposed above the second metal layer 106 for isolating the The second metal layer 106 and the color filter layer 108 are disposed above the first passivation layer 107.
  • the color filter layer 108 includes a first color resist arranged in sequence, and a second Color resistance and third color resistance; the second passivation layer 109 is disposed in the color Over the light absorbing layer 108 for isolating the color filter layer 108 and the pixel electrode layer 110; the pixel electrode layer 110 is disposed over the second passivation layer 109.
  • the channel 111 is opened at the color resistance overlapping position of the color filter layer 108, and the metal line 113 is disposed on the second metal layer 106 corresponding to the channel 111 to achieve shading;
  • the color resistance overlapping position is an overlapping area of adjacent color resistances.
  • the channels 111 are respectively opened at the color resistance overlapping position in the X-axis direction.
  • a metal line 113 is disposed on the second metal layer 106 corresponding to the channel 111 to achieve light shielding; in the embodiment, the metal line 113 is an extension of the drain electrode line. That is, in the direction of the scanning line, by extending the position of the drain electrode line to the channel, the extended portion can block the channel to achieve light shielding.
  • the width of the metal line 113 is greater than or equal to the width of the channel.
  • the color resisting overlap position may be that the red color resist and the blue color resist overlap, the red color resist and the green color resist overlap, or the blue color resist and the green color resist overlap.
  • the red color resistance and the blue color resistance overlap, the color resistance of the excavation channel may be blue color resistance, or the red color resistance may be dug out of the channel.
  • the embodiment of the invention further provides a liquid crystal display panel, which comprises a color filter array substrate and a liquid crystal layer.
  • the color filter array substrate includes: a glass substrate 101; a first metal layer 102, an insulating layer 103, an active layer 104, an ohmic contact layer 105, a second metal layer 106, and a first A passivation layer 107, a color filter layer 108, a second passivation layer 109, and a pixel electrode layer 110.
  • the first metal layer 102 is disposed above the glass substrate 101, the first metal layer 102 includes a scan line, and a gate of the thin film field effect transistor; the insulating layer 103 is disposed on the first metal layer 102.
  • the active layer 104 is disposed above the insulating layer 103 for conducting the charge of the source to the drain when the first metal layer 102 is opened;
  • the ohmic contact layer 105 is disposed at Above the two ends of the active layer 104, the contact resistance of the second metal layer 106 and the active layer 104 is made smaller and easier to conduct;
  • the second metal layer 106 is disposed on the ohm Above the contact layer 105, the second metal layer 106 includes a data line, a source and a drain of the thin film field effect transistor;
  • the first passivation layer 107 is disposed above the second metal layer 106 for isolating the The second metal layer 106 and the color filter layer 108 are disposed above the first passivation layer 107.
  • the color filter layer 108 includes a first color resist arranged in sequence, and a second Color resistance and third color resistance; the second passivation layer 109 is disposed in the color Over the light absorbing layer 108 for isolating the color filter layer 108 and the pixel electrode layer 110; the pixel electrode layer 110 is disposed over the second passivation layer 109.
  • the channel 111 is opened at the color-resistance overlapping position of the color filter layer 108. Specifically, the channel 111 is respectively opened at a color-resistance overlapping position in the Y-axis direction, and the channel 111 is The color resistance overlapping positions in the X-axis direction are also separately established.
  • the color resisting overlap position is an overlapping area of adjacent color resists.
  • the common electrode line 112 is disposed on the first metal layer 102 corresponding to the channel 111 to achieve light shielding. That is, in the data line direction, the width of the common electrode line corresponding to the channel 111 is widened to achieve light shielding. Preferably, the width of the common electrode line corresponding to the channel is greater than or equal to the width of the channel.
  • a metal line 113 is disposed on the second metal layer 106 corresponding to the channel 111 in the X-axis direction to achieve light shielding; in the embodiment, the metal line 113 is a drain electrode.
  • the extension of the line That is, in the direction of the scanning line, by extending the position of the drain electrode line to the channel, the extended portion can block the channel to achieve light shielding.
  • the width of the metal line 113 is greater than or equal to the width of the channel.
  • the color resisting overlap position may be that the red color resist and the blue color resist overlap, the red color resist and the green color resist overlap, or the blue color resist and the green color resist overlap.
  • the red color resistance and the blue color resistance overlap, the color resistance of the excavation channel may be blue color resistance, or the red color resistance may be dug out of the channel.
  • the present invention changes the structure of the color resist stack without increasing the planarization layer to increase the flowability of the PI and the liquid crystal. That is, the channel is dug in the place where the color filter of the color filter layer overlaps. At this time, since there is only one layer of color resistance at the channel, it cannot function as a light blocking, and there is a risk of light leakage. At this time, the present invention is in the Y-axis direction. A common electrode line is disposed on the first metal layer corresponding to the channel, and a metal line is disposed on the second metal layer corresponding to the channel in an X-axis direction to shield light leakage therein. The embodiment of the invention not only effectively shields light leakage, but also increases the flowability of PI and liquid crystal.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Optical Filters (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

La présente invention concerne un substrat de matrice de filtres colorés comprenant un substrat de verre (101), une première couche métallique (102), une couche d'isolation (103), une couche active (104), une couche de contact ohmique (105), une seconde couche métallique (106), une première couche de passivation (107), une couche de filtre coloré (108), une seconde couche de passivation (109), et une couche d'électrode de pixel (110). Un canal (111) est formé dans la position de chevauchement de résistance de couleur de la couche de filtre coloré (108), un fil d'électrode commune (112) est disposé sur la première couche métallique (102) correspondant au canal (111), et un fil métallique (113) est disposé sur la seconde couche métallique (106) correspondant au canal (111). Le substrat de réseau peut protéger efficacement la lumière afin qu'il n'y ait pas de fuite, et peut également augmenter la circulation de PI et de cristaux liquides.
PCT/CN2015/087619 2015-08-17 2015-08-20 Substrat de matrice de filtres colorés et panneau d'affichage à cristaux liquides WO2017028298A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018507732A JP6564526B2 (ja) 2015-08-17 2015-08-20 カラーフィルタアレイ基板及び液晶表示パネル
US14/904,952 US9568654B1 (en) 2015-08-20 2015-08-20 Color filter array substrate and liquid crystal display panel
EA201890517A EA034149B1 (ru) 2015-08-17 2015-08-20 Подложка матрицы светофильтра и жидкокристаллическая дисплейная панель
KR1020187007111A KR102032488B1 (ko) 2015-08-17 2015-08-20 컬러 필터 어레이 기판 및 액정 표시 패널
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CN110579919B (zh) * 2019-08-08 2020-12-04 深圳市华星光电技术有限公司 阵列基板及液晶面板
CN115933244A (zh) * 2022-12-22 2023-04-07 惠科股份有限公司 显示母板及其制备方法、液晶显示面板、电子纸

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GB2557485A (en) 2018-06-20
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KR102032488B1 (ko) 2019-10-15
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JP2018527614A (ja) 2018-09-20
EA201890517A1 (ru) 2018-07-31

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