WO2017028297A1 - 一种液晶显示面板 - Google Patents

一种液晶显示面板 Download PDF

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Publication number
WO2017028297A1
WO2017028297A1 PCT/CN2015/087618 CN2015087618W WO2017028297A1 WO 2017028297 A1 WO2017028297 A1 WO 2017028297A1 CN 2015087618 W CN2015087618 W CN 2015087618W WO 2017028297 A1 WO2017028297 A1 WO 2017028297A1
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WIPO (PCT)
Prior art keywords
layer
ultraviolet protection
liquid crystal
alignment film
display panel
Prior art date
Application number
PCT/CN2015/087618
Other languages
English (en)
French (fr)
Inventor
程薇
Original Assignee
武汉华星光电技术有限公司
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Publication date
Application filed by 武汉华星光电技术有限公司 filed Critical 武汉华星光电技术有限公司
Priority to JP2018507727A priority Critical patent/JP6587738B2/ja
Priority to US15/752,904 priority patent/US10451938B2/en
Priority to GB1803547.7A priority patent/GB2556605B/en
Priority to EA201890520A priority patent/EA035303B1/ru
Priority to KR1020187006212A priority patent/KR102033164B1/ko
Publication of WO2017028297A1 publication Critical patent/WO2017028297A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/13378—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation
    • G02F1/133788—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation by light irradiation, e.g. linearly polarised light photo-polymerisation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133606—Direct backlight including a specially adapted diffusing, scattering or light controlling members
    • G02F1/133607—Direct backlight including a specially adapted diffusing, scattering or light controlling members the light controlling member including light directing or refracting elements, e.g. prisms or lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/08—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 light absorbing layer
    • G02F2201/086—UV absorbing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/50—Protective arrangements

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a liquid crystal display panel.
  • TFT-LCD liquid crystal display is a thin film transistor type liquid crystal display, TFT (Thin Film Transistor, thin film transistor) liquid crystal is provided with a semiconductor switch for each pixel. Each pixel can be directly controlled by point pulse. The liquid crystal is used as a light valve to control the light source to form a display. Each pixel is provided with a semiconductor switch.
  • LTPS Low Temperature Poly-silicon, low temperature polysilicon technology
  • the semiconductor device uses low-temperature polysilicon as the channel layer, and realizes switching characteristics through metal scanning lines and signal lines, and LTPS
  • the frame opening rate is gradually reduced to nearly 20% or even smaller, and the energy and illuminance corresponding to the curing requirement of the sealant need to be greatly increased.
  • High energy and high illumination UV Breaking the bond of the liquid crystal in the boxed panel affects the image sticking performance of the LCD screen.
  • the traditional friction matching method has gradually changed to the optical alignment technology.
  • the optical alignment technology mainly uses high-energy and high-illuminance UV light to illuminate the TFT-LCD.
  • an alignment force is formed, and the initial alignment ability of the liquid crystal is provided to form a Pre-tilt angle.
  • High energy UV band versus LTPS TFT Semiconductor devices can cause irreparable damage. After UV illumination, device characteristics can drift, causing semiconductor switching devices to fail, causing threshold voltage shifts and Ion/Ioff anomalies.
  • the effect of the illumination reduces one UV mask and ensures that device characteristics are not affected.
  • a liquid crystal display panel comprising: a color film substrate; and an array substrate disposed opposite to each other; wherein
  • the array substrate includes:
  • each of the light shielding sheets being disposed opposite to a thin film transistor and completely covering the thin film transistor;
  • the device layer disposed above the glass substrate, wherein the device layer is provided with a thin film transistor;
  • An alignment film layer for aligning liquid crystal molecules in a specific direction wherein the alignment film layer is located on a surface of the array substrate near the color filter substrate;
  • the first layer of the ultraviolet protection layer and the second layer of the ultraviolet protection layer are further disposed between the device layer and the glass substrate;
  • the first layer of the ultraviolet protection layer is adjacent to the UV light source, and the second layer of the ultraviolet protection layer is away from the UV light source; the first layer of the ultraviolet protection layer has a higher refractive index for the UV light than the second layer of the ultraviolet protection layer.
  • the present invention also provides a liquid crystal display panel, the liquid crystal display panel comprising: a color film substrate, and an array substrate disposed opposite to each other;
  • the array substrate includes:
  • the device layer disposed above the glass substrate, wherein the device layer is provided with a thin film transistor;
  • Two ultraviolet protection layers are disposed on the same side of the device layer, the first ultraviolet protection layer is close to the UV light source, and the second ultraviolet protection layer is away from the UV light source; the refractive index of the first ultraviolet protection layer to the UV light Greater than the second layer of UV protective layer.
  • the array substrate further includes an alignment film layer for aligning liquid crystal molecules in a specific direction, and the alignment film layer is located on the array substrate near the color filter substrate. surface;
  • the first layer of the ultraviolet protection layer and the second layer of the ultraviolet protection layer are both located between the device layer and the alignment film layer.
  • the array substrate further includes an alignment film layer for aligning liquid crystal molecules in a specific direction, and the alignment film layer is located on the array substrate near the color filter substrate. surface;
  • the first layer of the ultraviolet protective layer is the alignment film layer
  • the second layer of the ultraviolet protection layer is between the device layer and the alignment film layer.
  • the array substrate further includes:
  • a pixel electrode layer between the alignment film layer and the insulating layer
  • the second layer of ultraviolet protection layer is the insulating layer.
  • the liquid crystal display panel further includes a sealant for butting and fixing the array substrate and the color filter substrate;
  • the UV light source is incident from a glass substrate side of the array substrate, and the first layer of the ultraviolet protection layer and the second layer of the ultraviolet protection layer are both located at the device layer. Between the glass substrate and the glass substrate.
  • the array substrate further includes a buffer layer, and the buffer layer is located between the glass substrate and the device layer;
  • the buffer layer is a multilayer structure including the first layer of ultraviolet protection layer and the second layer of ultraviolet protection layer.
  • the buffer layer includes a first silicon nitride layer, a silicon oxide layer, and a second silicon nitride layer; the first silicon nitride layer or the second nitrogen Any one of the silicon layers adjacent to the glass substrate is the first UV protective layer, and away from the glass substrate is a second UV protective layer.
  • a plurality of light shielding sheets are disposed between the device layer and the glass substrate, and each of the light shielding sheets is disposed opposite to a thin film transistor and completely Covering the thin film transistor.
  • the array substrate further includes:
  • An alignment film layer for aligning liquid crystal molecules in a specific direction wherein the alignment film layer is located on a surface of the array substrate near the color filter substrate;
  • the first layer of the ultraviolet protection layer and the second layer of the ultraviolet protection layer are further disposed between the device layer and the glass substrate.
  • the array substrate further includes:
  • the buffer layer is a multilayer structure and includes the first layer of ultraviolet protection layer and the second layer of ultraviolet protection layer.
  • the present invention has two ultraviolet protection layers disposed on the same side of the device layer, the first ultraviolet protection layer is close to the UV light source and is a light-tight medium; the second ultraviolet protection layer is away from the UV light source, and is light-drained. a medium; the first layer of the ultraviolet protection layer has a refractive index greater than the second layer of the ultraviolet protection layer.
  • the UV light source is illuminated from the first layer of UV protective layer to the second layer of UV protective layer, total reflection occurs at the location to protect the device layer.
  • a high-density silica film can be obtained, and the total reflection property can be utilized to avoid UV.
  • the effect of the illumination reduces one UV mask and ensures that device characteristics are not affected.
  • FIG. 1 is a schematic structural diagram of a liquid crystal display panel according to Embodiment 1 of the present invention.
  • FIG. 2 is a schematic structural diagram of a device layer according to an embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram of a liquid crystal display panel according to Embodiment 2 of the present invention.
  • FIG. 4 is a schematic structural diagram of a buffer layer according to an embodiment of the present invention.
  • the display panel of the present invention may be, for example, a TFT-LCD (Thin Film Transistor Liquid) Crystal Display, thin film transistor liquid crystal display panel), AMOLED (Active Matrix Organic Light Emitting) Diode, active matrix OLED panel) and other display panels.
  • TFT-LCD Thin Film Transistor Liquid
  • AMOLED Active Matrix Organic Light Emitting Diode
  • active matrix OLED panel active matrix OLED panel
  • two ultraviolet protection layers are disposed on the same side of the device layer, the first ultraviolet protection layer is close to the UV light source and is a light-tight medium; the second ultraviolet protection layer is away from the UV light source, and is light-drained. a medium; the first layer of the ultraviolet protection layer has a refractive index greater than the second layer of the ultraviolet protection layer.
  • the UV light source is illuminated from the first layer of UV protective layer to the second layer of UV protective layer, total reflection occurs at the location to protect the device layer.
  • a high-density silica film can be obtained, and the total reflection property can be utilized to avoid UV.
  • the effect of the illumination reduces one UV mask and ensures that device characteristics are not affected.
  • the present invention provides a liquid crystal display panel, comprising: a color filter substrate, and an array substrate disposed oppositely; wherein the array substrate comprises: a glass substrate; and a device layer disposed above the glass substrate a thin film transistor is disposed in the device layer; two ultraviolet protection layers are disposed on the same side of the device layer, the first ultraviolet protection layer is adjacent to the UV light source, and the second ultraviolet protection layer is away from the UV light source; A layer of UV protection layer has a higher refractive index for UV light than the second layer of UV protection layer.
  • FIG. 1 is a schematic structural diagram of a liquid crystal display panel according to Embodiment 1 of the present invention. For the convenience of description, only parts related to the embodiment of the present invention are shown.
  • the liquid crystal display panel includes: a color film substrate, and an array substrate disposed opposite to each other.
  • the array substrate includes a glass substrate 100, a device layer 200, a flat layer 300, an insulating layer 400, a pixel electrode layer 500, and an alignment film layer 600.
  • the device layer 200 is disposed above the glass substrate 100; the flat layer 300 is disposed above the device layer 200; the insulating layer 400 is disposed above the flat layer 300, and at least a portion of the region and the alignment
  • the film layer is adjacent to each other; the pixel electrode layer 500 is disposed above the insulating layer 400; and the alignment film layer 600 is disposed above the pixel electrode layer 500.
  • the alignment film layer 600 is used to align the liquid crystal molecules in a specific direction, and the alignment film layer 600 is located on the surface of the array substrate near the color filter substrate.
  • the flat layer 300 may or may not be provided, and if the flat layer 300 is provided, the device layer may be planarized.
  • the first layer of the ultraviolet protection layer and the second layer of the ultraviolet protection layer are both located in the device layer and the alignment film layer. between.
  • the first layer of the ultraviolet protection layer may be the alignment film layer
  • the second layer of the ultraviolet protection layer is located at the device layer and the Alignment between layers.
  • the insulating layer 400 is silicon nitride
  • the alignment film layer 600 uses a conventional alignment film material, but the refractive index of the alignment film layer 600 is made obvious by separately adjusting the film formation conditions of the insulating layer 400 and the alignment film layer 600 at the time of manufacture. Greater than the insulating layer 400.
  • the alignment film layer 600 having a relatively large refractive index is used as the first ultraviolet protection layer, and the insulating layer 400 having a small refractive index is used as the second ultraviolet protection layer.
  • the UV light source is located on the side of the array substrate adjacent to the alignment film layer 600, and the UV light source is irradiated from the light-tight alignment film layer 600 to the light-smooth insulating layer 400.
  • the angle of refraction is always greater than the angle of incidence, and the angle of incidence corresponding to the angle of refraction of 90° is called the critical angle; when the angle of incidence is greater than the critical angle, the light may not be Total reflection occurs on the other side of the interface (ie, the side where the light is on the media).
  • the incident direction of the UV light is adjusted, and the alignment film layer 600 as the optically dense medium in the embodiment and the insulating layer 400 as the light-draining medium are used to make the UV light at the interface between the alignment film layer 600 and the insulating layer 400. Total reflection occurs to prevent UV light from continuing deep into the array substrate to protect device layer 200.
  • the alignment film layer 600 and the insulating layer 400 on the same side of the device layer in the array substrate are directly used as the first ultraviolet protection layer and the second ultraviolet protection layer, respectively, and the film formation conditions are adjusted to adjust the film formation conditions.
  • the refractive index is such that the alignment film layer 600 becomes an optically dense medium having a larger refractive index, and the insulating layer 400 becomes a light-draining medium having a refractive index smaller than that of the alignment film layer 600. Therefore, the first layer of the ultraviolet protection layer and the second layer of the ultraviolet protection layer in the embodiment do not increase the number of layers and the process of the array substrate in the prior art, thereby providing a better TFT device layer in the photo-alignment process. Protection, significantly improving yield.
  • FIG. 2 is a schematic structural diagram of a device layer according to an embodiment of the present invention; for convenience of description, only parts related to the embodiment of the present invention are shown.
  • the device layer 200 includes a gate 201, an isolation layer 202, a source and a drain 203, a gate insulating layer 901, and a channel layer (N+ layer).
  • the source and drain electrodes 203 are respectively connected to the two ends of the channel layer through the via holes on the isolation layer 202, and the isolation layer 202 is made of electrically insulating silicon nitride or the like to make the gate electrode 201 and the source and drain electrodes. 203 electrical insulation.
  • the gate 201 is connected to the scan line, and the source or drain 203 is connected to the data line.
  • FIG. 3 is a schematic structural diagram of a liquid crystal display panel according to Embodiment 2 of the present invention. For the convenience of description, only parts related to the embodiment of the present invention are shown.
  • the liquid crystal display panel includes a color filter substrate, an array substrate disposed opposite to each other, and a sealant for docking and fixing the array substrate and the color filter substrate.
  • the array substrate includes a glass substrate 100, a buffer layer 700, and a device layer 200.
  • the buffer layer 700 is located between the glass substrate 100 and the device layer 200.
  • a thin film transistor is disposed in the device layer 200.
  • the buffer layer 700 is a multi-layer structure including the first layer of the ultraviolet protection layer and the second layer of the ultraviolet protection layer.
  • the first layer of the ultraviolet protection layer is adjacent to the UV light source, and the second layer of the ultraviolet protection layer is away from the UV light source; the first layer of the ultraviolet protection layer has a higher refractive index for the UV light than the second layer of the ultraviolet protection layer.
  • the buffer layer includes a first silicon nitride layer 701, a silicon oxide layer 702, and a second silicon nitride layer 703; the first silicon nitride layer or the Any one of the second silicon nitride layers adjacent to the glass substrate is a first layer of ultraviolet protection layer, and a second layer of ultraviolet protection layer away from the glass substrate.
  • the refractive index of the first silicon nitride layer 701 is significantly larger than that of the silicon oxide layer 702 by separately adjusting the film formation conditions of the first silicon nitride layer 701 and the silicon oxide layer 702.
  • the first silicon nitride layer 701 having a relatively large refractive index is used as the first ultraviolet protection layer, and the silicon oxide layer 702 having a small refractive index is used as the second ultraviolet protection layer.
  • a plurality of light shielding sheets 900 are further disposed between the device layer and the glass substrate, and each of the light shielding sheets is disposed opposite to the thin film transistor and completely covers the film. Transistor.
  • the light shielding sheet 900 is disposed on the glass substrate 100 for preventing the influence of light on the device layer 200.
  • the UV light source when the frame glue is photocured, the UV light source is incident from the glass substrate side of the array substrate, and the light shielding sheet blocks direct UV light to prevent UV light from entering the device. a layer that avoids the effect of light on the device layer 200; however, there is also oblique UV light, and therefore, in the embodiment of the invention, since the buffer layer is provided, the buffer layer includes the first layer of ultraviolet protection layer and the The second layer of UV protection layer, such that oblique UV light is totally reflected at the interface of the first layer of UV protection layer and the second layer of UV protection layer, thereby preventing UV light from continuing deep into the array substrate to protect device layer 200.
  • FIG. 3 is a schematic structural diagram of a liquid crystal display panel according to Embodiment 3 of the present invention. For the convenience of description, only parts related to the embodiment of the present invention are shown.
  • the liquid crystal display panel includes a color filter substrate, an array substrate disposed opposite to each other, and a sealant for docking and fixing the array substrate and the color filter substrate.
  • the array substrate includes a glass substrate 100, a light shielding sheet 900, a buffer layer 700, a device layer 200, a flat layer 300, an insulating layer 400, a pixel electrode layer 500, and an alignment film layer 600.
  • the light shielding sheet 900 is disposed on the glass substrate 100 for preventing the influence of light on the device layer 200.
  • the buffer layer 700 is disposed above the light shielding sheet 900, and the device layer 200 is disposed above the buffer layer 700.
  • the flat layer 300 is disposed above the device layer 200; the insulating layer 400 is disposed above the flat layer 300, and at least a portion of the region is adjacent to the alignment film layer; the pixel electrode layer 500 is disposed above the insulating layer 400; The alignment film layer 600 is disposed above the pixel electrode layer 500.
  • the alignment film layer 600 is used to align the liquid crystal molecules in a specific direction, and the alignment film layer 600 is located on the surface of the array substrate near the color filter substrate.
  • the UV light source is located on the side of the array substrate adjacent to the alignment film layer 600, and the UV light source is irradiated from the light-tight alignment film layer 600 to the light-smooth insulating layer 400.
  • the angle of refraction is always greater than the angle of incidence, and the angle of incidence corresponding to the angle of refraction of 90° is called the critical angle; when the angle of incidence is greater than the critical angle, the light may not be Total reflection occurs on the other side of the interface (ie, the side where the light is on the media).
  • the incident direction of the UV light is adjusted, and the alignment film layer 600 as the optically dense medium in the embodiment and the insulating layer 400 as the light-draining medium are used to make the UV light at the interface between the alignment film layer 600 and the insulating layer 400. Total reflection occurs to prevent UV light from continuing deep into the array substrate to protect device layer 200.
  • the array substrate and the color filter substrate are aligned by a plastic frame to form a liquid crystal panel box, and the liquid crystal panel box is irradiated with a UV light source to cure the plastic frame, thereby ensuring the array substrate and the The color film substrate is reliably connected and has good sealing properties.
  • the UV light source is incident from the glass substrate side of the array substrate, and the light shielding sheet blocks direct UV light to prevent UV light from entering the device layer and avoiding light to the device layer.
  • the present invention provides two layers of ultraviolet protection layers on the same side of the device layer, the first layer of ultraviolet protection layer is close to the UV light source, which is a light-tight medium; the second layer of ultraviolet protection layer is away from the UV light source, and is light-drained. a medium; the first layer of the ultraviolet protection layer has a refractive index greater than the second layer of the ultraviolet protection layer.
  • the UV light source is illuminated from the first layer of UV protective layer to the second layer of UV protective layer, total reflection occurs at the location to protect the device layer.
  • a high-density silica film can be obtained, and the total reflection property can be utilized to avoid UV.
  • the effect of the illumination reduces one UV mask and ensures that device characteristics are not affected.

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Abstract

一种液晶显示面板包括：彩膜基板和阵列基板；阵列基板包括：设置于玻璃基板（100）上方的器件层（200）；在器件层（200）的同侧设置有两层紫外防护层，第一层紫外防护层靠近UV光源，第二层紫外防护层远离UV光源；第一层紫外防护层对UV光的折射率大于第二层紫外防护层，可减少一道UV mask，保证器件特性不受影响。

Description

一种液晶显示面板 技术领域
本发明涉及显示技术领域，特别涉及一种液晶显示面板。
 背景技术
TFT-LCD液晶显示屏是薄膜晶体管型液晶显示屏，TFT(Thin Film Transistor，薄膜晶体管)液晶为每个像素都设有一个半导体开关，每个像素都可以通过点脉冲直接控制，利用液晶作为光阀控制光源形成显示，每个像素上都设有一个半导体开关，在LTPS (Low Temperature Poly-silicon，低温多晶硅技术) 工艺中，半导体器件由低温多晶硅作为通道层，通过金属扫描线和信号线实现开关特性，而LTPS 产品在高解析度和窄边框的条件下，为使框胶固化更充分，在边框开口率上逐步降低到接近20%甚至更小，对应框胶固化需求的能量和照度也需要大幅度加大。高能量及高照度的UV 对成盒panel 内液晶的键结断裂，影响液晶屏的Image sticking 表现。并且在现行LTPS 配向技术上，已由传统的摩擦配向方式逐步转为光配向技术，与传统的摩擦配向方式相比，光配向技术主要采用高能量和高照度的UV 光照射TFT-LCD Array侧以及CF侧，配向膜经过UV 照射后，形成配向力，提供液晶的初始配向能力，形成Pre-tilt angle。高能量的UV 波段对LTPS TFT 半导体器件会造成不可恢复的损伤，经UV 照射后，器件特性会发生漂移，造成半导体开关器件失效，造成阈值电压偏移和Ion/Ioff 异常。
故，有必要提出一种新的技术方案，以解决上述技术问题。
 技术问题
本发明的目的在于提供一种液晶显示面板，其能在不增加任何工艺和成本的前提下，改善成膜条件得到高密的二氧化硅薄膜，利用全反射特性，避免UV 照射的影响，可减少一道UV mask，保证器件特性不受影响。
 技术解决方案
一种液晶显示面板，所述液晶显示面板包括：彩膜基板，以及相对设置的阵列基板；其中，
所述阵列基板包括：
玻璃基板；
多个光遮挡片，设置于所述器件层与所述玻璃基板之间，每一所述光遮挡片与一所述薄膜晶体管正对设置并完全覆盖该薄膜晶体管；
器件层，设置于所述玻璃基板的上方，所述器件层内设有薄膜晶体管；
配向膜层，用于使液晶分子按特定方向排列的，所述配向膜层位于所述阵列基板上靠近所述彩膜基板的表面；
绝缘层，位于所述配向膜层与所述器件层之间，且至少部分区域与所述配向膜层邻接，所述配向膜层对UV光的折射率大于所述绝缘层；
所述器件层与所述玻璃基板之间还设置有所述第一层紫外防护层和所述第二层紫外防护层；
第一层紫外防护层靠近UV光源，第二层紫外防护层远离UV光源；所述第一层紫外防护层对UV光的折射率大于所述第二层紫外防护层。
本发明还提供了一种液晶显示面板，所述液晶显示面板包括：彩膜基板，以及相对设置的阵列基板；其中，
所述阵列基板包括：
玻璃基板；
器件层，设置于所述玻璃基板的上方，所述器件层内设有薄膜晶体管；
在所述器件层的同侧设置有两层紫外防护层，第一层紫外防护层靠近UV光源，第二层紫外防护层远离UV光源；所述第一层紫外防护层对UV光的折射率大于所述第二层紫外防护层。
优选的，在所述的液晶显示面板中，所述阵列基板还包括用于使液晶分子按特定方向排列的配向膜层，所述配向膜层位于所述阵列基板上靠近所述彩膜基板的表面；
在对所述配向膜层进行光配向处理时，所述第一层紫外防护层和所述第二层紫外防护层均位于所述器件层与所述配向膜层之间。
优选的，在所述的液晶显示面板中，所述阵列基板还包括用于使液晶分子按特定方向排列的配向膜层，所述配向膜层位于所述阵列基板上靠近所述彩膜基板的表面；
在对配向膜层进行光配向处理时，所述第一层紫外防护层为所述配向膜层，所述第二层紫外防护层位于所述器件层与所述配向膜层之间。
优选的，在所述的液晶显示面板中，所述阵列基板还包括：
绝缘层，位于所述配向膜层与所述器件层之间，且至少部分区域与所述配向膜层邻接；
像素电极层，位于所述配向膜层与所述绝缘层之间；
所述第二层紫外防护层为所述绝缘层。
优选的，在所述的液晶显示面板中，所述液晶显示面板还包括用于对接固定所述阵列基板与所述彩膜基板的框胶；
在对所述框胶进行光固化处理时，所述UV光源从所述阵列基板的玻璃基板侧入射，所述第一层紫外防护层和所述第二层紫外防护层均位于所述器件层与所述玻璃基板之间。
优选的，在所述的液晶显示面板中，所述阵列基板还包括缓冲层，所述缓冲层位于所述玻璃基板与所述器件层之间；
所述缓冲层为多层结构，包括所述第一层紫外防护层和所述第二层紫外防护层。
优选的，在所述的液晶显示面板中，所述缓冲层包括第一氮化硅层、氧化硅层、以及第二氮化硅层；所述第一氮化硅层或所述第二氮化硅层中的任一靠近玻璃基板的一层是第一层紫外防护层，而与之相比远离玻璃基板的是第二层紫外防护层。
优选的，在所述的液晶显示面板中，所述器件层与所述玻璃基板之间还设置有多个光遮挡片，每一所述光遮挡片与一所述薄膜晶体管正对设置并完全覆盖该薄膜晶体管。
优选的，在所述的液晶显示面板中，所述阵列基板还包括：
配向膜层，用于使液晶分子按特定方向排列的，所述配向膜层位于所述阵列基板上靠近所述彩膜基板的表面；
绝缘层，位于所述配向膜层与所述器件层之间，且至少部分区域与所述配向膜层邻接，所述配向膜层对UV光的折射率大于所述绝缘层；
所述器件层与所述玻璃基板之间还设置有所述第一层紫外防护层和所述第二层紫外防护层。
优选的，在所述的液晶显示面板中，所述阵列基板还包括：
缓冲层，位于所述玻璃基板与所述器件层之间；
所述缓冲层为多层结构，并包括所述第一层紫外防护层和所述第二层紫外防护层。
 有益效果
相对现有技术，本发明通过在器件层的同侧设置有两层紫外防护层，第一层紫外防护层靠近UV光源，为光密介质；第二层紫外防护层远离UV光源，为光疏介质；所述第一层紫外防护层对UV光的折射率大于所述第二层紫外防护层。当所述UV光源从所述第一层紫外防护层照射至所述第二层紫外防护层时，在所述位置处发生全反射，以保护所述器件层。以使本发明在不增加任何工艺和成本的前提下，改善成膜条件得到高密的二氧化硅薄膜，利用全反射特性，避免UV 照射的影响，可减少一道UV mask，保证器件特性不受影响。
 附图说明
图1为本发明实施例一提供的液晶显示面板的结构示意图；
图2是本发明实施例提供的器件层的结构示意图；
图3为本发明实施例二提供的液晶显示面板的结构示意图。
图4为本发明实施例提供的缓冲层的结构示意图。
 本发明的最佳实施方式
本说明书所使用的词语“实施例”意指用作实例、示例或例证。此外，本说明书和所附权利要求中所使用的冠词“一”一般地可以被解释为意指“一个或多个”，除非另外指定或从上下文清楚导向单数形式。
本发明的显示面板可以是诸如TFT-LCD（Thin Film Transistor Liquid Crystal Display，薄膜晶体管液晶显示面板）、AMOLED（Active Matrix Organic Light Emitting Diode，有源矩阵有机发光二极管面板）等显示面板。
在本发明实施例中，通过在器件层的同侧设置有两层紫外防护层，第一层紫外防护层靠近UV光源，为光密介质；第二层紫外防护层远离UV光源，为光疏介质；所述第一层紫外防护层对UV光的折射率大于所述第二层紫外防护层。当所述UV光源从所述第一层紫外防护层照射至所述第二层紫外防护层时，在所述位置处发生全反射，以保护所述器件层。以使本发明在不增加任何工艺和成本的前提下，改善成膜条件得到高密的二氧化硅薄膜，利用全反射特性，避免UV 照射的影响，可减少一道UV mask，保证器件特性不受影响。
本发明提供了一种液晶显示面板，所述液晶显示面板包括：彩膜基板，以及相对设置的阵列基板；其中，所述阵列基板包括：玻璃基板；器件层，设置于所述玻璃基板的上方，所述器件层内设有薄膜晶体管；在所述器件层的同侧设置有两层紫外防护层，第一层紫外防护层靠近UV光源，第二层紫外防护层远离UV光源；所述第一层紫外防护层对UV光的折射率大于所述第二层紫外防护层。
为了说明本发明所述的技术方案，下面通过具体实施例来进行说明。
实施例一
请参阅图1，为本发明实施例一提供的液晶显示面板的结构示意图。为了便于说明，仅示出了与本发明实施例相关的部分。所述液晶显示面板包括：彩膜基板，以及相对设置的阵列基板。
所述阵列基板包括：玻璃基板100、器件层200、平坦层300、绝缘层400、像素电极层500、以及配向膜层600。其中，所述器件层200设置于所述玻璃基板100上方；所述平坦层300设置于所述器件层200上方；绝缘层400设置于所述平坦层300上方，且至少部分区域与所述配向膜层邻接；所述像素电极层500设置于绝缘层400上方；配向膜层600设置于所述像素电极层500上方。其中，配向膜层600用于使液晶分子按特定方向排列，所述配向膜层600位于所述阵列基板上靠近所述彩膜基板的表面。
然而，可以理解的是，所述平坦层300可有可无，设有平坦层300的话，那么可以使器件层平坦化。
作为本发明一实施例，在对所述配向膜层进行光配向处理时，所述第一层紫外防护层和所述第二层紫外防护层均位于所述器件层与所述配向膜层之间。然而，可以理解的是，在对配向膜层进行光配向处理时，所述第一层紫外防护层可为所述配向膜层，所述第二层紫外防护层位于所述器件层与所述配向膜层之间。
具体的，绝缘层400为氮化硅，配向膜层600使用传统配向膜材料，只是在制造时通过分别调整绝缘层400和配向膜层600的成膜条件，使配向膜层600的折射率明显大于绝缘层400。将折射率相对大的配向膜层600作为第一层紫外防护层，将折射率小的绝缘层400作为第二层紫外防护层。在本实施例的光配向制程中，UV光源位于阵列基板的靠近配向膜层600的一侧，所述UV光源从光密的配向膜层600照射至光疏的绝缘层400。当光从光密介质向光疏介质折射时，折射角总大于入射角，而与90°的折射角相对应的入射角被称为临界角；当入射角大于临界角时，光线会因为不能进入分界面的另一侧（即光疏介质所在侧）而发生全反射。
同理，调整UV光的入射方向，利用本实施例中作为光密介质的配向膜层600和作为光疏介质的绝缘层400，使UV光在配向膜层600和绝缘层400的分界面处发生全反射，从而避免UV光继续深入阵列基板以保护器件层200。
在本实施例中，直接利用阵列基板中的位于器件层同侧的配向膜层600和绝缘层400分别作为第一层紫外防护层和第二层紫外防护层，通过改变成膜条件来调节其折射率的大小，使配向膜层600成为折射率更大的光密介质，使绝缘层400成为折射率小于配向膜层600的光疏介质。因此，本实施例中的第一层紫外防护层和第二层紫外防护层并没有增加现有技术中阵列基板的层数和制程，即可在光配向制程中为TFT器件层提供更好的保护，显著提升良率。
请参阅图2，为本发明实施例提供的器件层的结构示意图；为了便于说明，仅示出了与本发明实施例相关的部分。
所述器件层200包括：栅极201、隔离层202、源极和漏极203、栅极绝缘层901及通道层（标N+那一层）。其中，源极和漏极203穿过隔离层202上的过孔分别与通道层的两端相连，隔离层202采用电性绝缘的氮化硅等材料制成，使栅极201与源漏极203电性绝缘。栅极201与扫描线相连，源极或漏极203与数据线相连。
实施例二
请参阅图3，为本发明实施例二提供的液晶显示面板的结构示意图。为了便于说明，仅示出了与本发明实施例相关的部分。所述液晶显示面板包括：彩膜基板、相对设置的阵列基板、以及用于对接固定所述阵列基板与所述彩膜基板的框胶。
其中，所述阵列基板包括：玻璃基板100、缓冲层700、以及器件层200。其中，所述缓冲层700位于所述玻璃基板100与所述器件层200之间。所述器件层200内设有薄膜晶体管。
在本发明实施例中，所述缓冲层700为多层结构，包括所述第一层紫外防护层和所述第二层紫外防护层。第一层紫外防护层靠近UV光源，第二层紫外防护层远离UV光源；所述第一层紫外防护层对UV光的折射率大于所述第二层紫外防护层。
请参阅图4，在本发明实施例中，所述缓冲层包括第一氮化硅层701、氧化硅层702、以及第二氮化硅层703；所述第一氮化硅层或所述第二氮化硅层中的任一靠近玻璃基板的一层是第一层紫外防护层，而与之相比远离玻璃基板的是第二层紫外防护层。
在本发明实施例中，通过分别调整第一氮化硅层701和氧化硅层702的成膜条件，使第一氮化硅层701的折射率明显大于氧化硅层702。将折射率相对大的第一氮化硅层701作为第一层紫外防护层，将折射率小的氧化硅层702作为第二层紫外防护层。
作为本发明一优选实施例，所述器件层与所述玻璃基板之间还设置有多个光遮挡片900，每一所述光遮挡片与一所述薄膜晶体管正对设置并完全覆盖该薄膜晶体管。所述光遮挡片900设置于所述玻璃基板100上，用于避免光对器件层200的影响。
在本发明实施例中，在对所述框胶进行光固化处理时，所述UV光源从所述阵列基板的玻璃基板侧入射，光遮挡片会阻挡直射UV光，以防止UV光射入器件层，避免光对器件层200的影响；然而还会存在有斜射的UV光，因此，本发明实施例中由于设置有缓冲层，所述缓冲层包括所述第一层紫外防护层和所述第二层紫外防护层，因此斜射的UV光在第一层紫外防护层和所述第二层紫外防护层的分界面处发生全反射，从而避免UV光继续深入阵列基板以保护器件层200。
实施例三
请一并参阅图2及图3，为本发明实施例三提供的液晶显示面板的结构示意图。为了便于说明，仅示出了与本发明实施例相关的部分。所述液晶显示面板包括：彩膜基板、相对设置的阵列基板、以及用于对接固定所述阵列基板与所述彩膜基板的框胶。
所述阵列基板包括：玻璃基板100、光遮挡片900、缓冲层700、器件层200、平坦层300、绝缘层400、像素电极层500、以及配向膜层600。所述光遮挡片900设置于所述玻璃基板100上，用于避免光对器件层200的影响；缓冲层700设置于所述光遮挡片900上方，器件层200设置于缓冲层700上方，所述平坦层300设置于所述器件层200上方；绝缘层400设置于所述平坦层300上方，且至少部分区域与所述配向膜层邻接；所述像素电极层500设置于绝缘层400上方；配向膜层600设置于所述像素电极层500上方。其中，配向膜层600用于使液晶分子按特定方向排列，所述配向膜层600位于所述阵列基板上靠近所述彩膜基板的表面。
在本实施例的光配向制程中，UV光源位于阵列基板的靠近配向膜层600的一侧，所述UV光源从光密的配向膜层600照射至光疏的绝缘层400。当光从光密介质向光疏介质折射时，折射角总大于入射角，而与90°的折射角相对应的入射角被称为临界角；当入射角大于临界角时，光线会因为不能进入分界面的另一侧（即光疏介质所在侧）而发生全反射。
同理，调整UV光的入射方向，利用本实施例中作为光密介质的配向膜层600和作为光疏介质的绝缘层400，使UV光在配向膜层600和绝缘层400的分界面处发生全反射，从而避免UV光继续深入阵列基板以保护器件层200。
在本发明实施例中，通过胶框使阵列基板和彩膜基板对位贴合形成液晶面板盒，并采用UV光源照射所述液晶面板盒使胶框固化，从而确保所述阵列基板和所述彩膜基板可靠连接并具有良好的密封性能。
在对所述框胶进行光固化处理时，所述UV光源从所述阵列基板的玻璃基板侧入射，光遮挡片会阻挡直射UV光，以防止UV光射入器件层，避免光对器件层200的影响；然而还会存在有斜射的UV光，因此，本发明实施例中由于设置有缓冲层，所述缓冲层包括所述第一层紫外防护层和所述第二层紫外防护层，因此斜射的UV光在第一层紫外防护层和所述第二层紫外防护层的分界面处发生全反射，从而避免UV光继续深入阵列基板以保护器件层200。
综上所述，本发明通过在器件层的同侧设置有两层紫外防护层，第一层紫外防护层靠近UV光源，为光密介质；第二层紫外防护层远离UV光源，为光疏介质；所述第一层紫外防护层对UV光的折射率大于所述第二层紫外防护层。当所述UV光源从所述第一层紫外防护层照射至所述第二层紫外防护层时，在所述位置处发生全反射，以保护所述器件层。以使本发明在不增加任何工艺和成本的前提下，改善成膜条件得到高密的二氧化硅薄膜，利用全反射特性，避免UV 照射的影响，可减少一道UV mask，保证器件特性不受影响。
尽管已经相对于一个或多个实现方式示出并描述了本发明，但是本领域技术人员基于对本说明书和附图的阅读和理解将会想到等价变型和修改。本发明包括所有这样的修改和变型，并且仅由所附权利要求的范围限制。特别地关于由上述组件执行的各种功能，用于描述这样的组件的术语旨在对应于执行所述组件的指定功能（例如其在功能上是等价的）的任意组件（除非另外指示），即使在结构上与执行本文所示的本说明书的示范性实现方式中的功能的公开结构不等同。此外，尽管本说明书的特定特征已经相对于若干实现方式中的仅一个被公开，但是这种特征可以与如可以对给定或特定应用而言是期望和有利的其他实现方式的一个或多个其他特征组合。而且，就术语“包括”、“具有”、“含有”或其变形被用在具体实施方式或权利要求中而言，这样的术语旨在以与术语“包含”相似的方式包括。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (18)

  1. 一种液晶显示面板，其中所述液晶显示面板包括：彩膜基板，以及相对设置的阵列基板；其中，
    所述阵列基板包括：
    玻璃基板；
    多个光遮挡片，设置于所述器件层与所述玻璃基板之间，每一所述光遮挡片与一所述薄膜晶体管正对设置并完全覆盖该薄膜晶体管；
    器件层，设置于所述玻璃基板的上方，所述器件层内设有薄膜晶体管；
    配向膜层，用于使液晶分子按特定方向排列的，所述配向膜层位于所述阵列基板上靠近所述彩膜基板的表面；
    绝缘层，位于所述配向膜层与所述器件层之间，且至少部分区域与所述配向膜层邻接，所述配向膜层对UV光的折射率大于所述绝缘层；
    所述器件层与所述玻璃基板之间还设置有所述第一层紫外防护层和所述第二层紫外防护层；
    第一层紫外防护层靠近UV光源，第二层紫外防护层远离UV光源；所述第一层紫外防护层对UV光的折射率大于所述第二层紫外防护层。
  2. 根据权利要求1所述的液晶显示面板，其中在对所述配向膜层进行光配向处理时，所述第一层紫外防护层和所述第二层紫外防护层均位于所述器件层与所述配向膜层之间。
  3. 根据权利要求1所述的液晶显示面板，其中在对配向膜层进行光配向处理时，所述第一层紫外防护层为所述配向膜层，所述第二层紫外防护层位于所述器件层与所述配向膜层之间。
  4. 根据权利要求3所述的液晶显示面板，其中所述第二层紫外防护层为所述绝缘层。
  5. 根据权利要求1所述的液晶显示面板，其中所述液晶显示面板还包括用于对接固定所述阵列基板与所述彩膜基板的框胶；
    在对所述框胶进行光固化处理时，所述UV光源从所述阵列基板的玻璃基板侧入射，所述第一层紫外防护层和所述第二层紫外防护层均位于所述器件层与所述玻璃基板之间。
  6. 根据权利要求5所述的液晶显示面板，其中所述阵列基板还包括缓冲层，所述缓冲层位于所述玻璃基板与所述器件层之间；
    所述缓冲层为多层结构，包括所述第一层紫外防护层和所述第二层紫外防护层。
  7. 根据权利要求6所述的液晶显示面板，其中所述缓冲层包括第一氮化硅层、氧化硅层、以及第二氮化硅层；所述第一氮化硅层或所述第二氮化硅层中的任一靠近玻璃基板的一层是第一层紫外防护层，而与之相比远离玻璃基板的是第二层紫外防护层。
  8. 根据权利要求1所述的液晶显示面板，其中所述阵列基板还包括：
    缓冲层，位于所述玻璃基板与所述器件层之间；
    所述缓冲层为多层结构，并包括所述第一层紫外防护层和所述第二层紫外防护层。
  9. 一种液晶显示面板，其中所述液晶显示面板包括：彩膜基板，以及相对设置的阵列基板；其中，
    所述阵列基板包括：
    玻璃基板；
    器件层，设置于所述玻璃基板的上方，所述器件层内设有薄膜晶体管；
    在所述器件层的同侧设置有两层紫外防护层，第一层紫外防护层靠近UV光源，第二层紫外防护层远离UV光源；所述第一层紫外防护层对UV光的折射率大于所述第二层紫外防护层。
  10. 根据权利要求9所述的液晶显示面板，其中所述阵列基板还包括用于使液晶分子按特定方向排列的配向膜层，所述配向膜层位于所述阵列基板上靠近所述彩膜基板的表面；
    在对所述配向膜层进行光配向处理时，所述第一层紫外防护层和所述第二层紫外防护层均位于所述器件层与所述配向膜层之间。
  11. 根据权利要求9所述的液晶显示面板，其中所述阵列基板还包括用于使液晶分子按特定方向排列的配向膜层，所述配向膜层位于所述阵列基板上靠近所述彩膜基板的表面；
    在对配向膜层进行光配向处理时，所述第一层紫外防护层为所述配向膜层，所述第二层紫外防护层位于所述器件层与所述配向膜层之间。
  12. 根据权利要求11所述的液晶显示面板，其中所述阵列基板还包括：
    绝缘层，位于所述配向膜层与所述器件层之间，且至少部分区域与所述配向膜层邻接；
    像素电极层，位于所述配向膜层与所述绝缘层之间；
    所述第二层紫外防护层为所述绝缘层。
  13. 根据权利要求9所述的液晶显示面板，其中所述液晶显示面板还包括用于对接固定所述阵列基板与所述彩膜基板的框胶；
    在对所述框胶进行光固化处理时，所述UV光源从所述阵列基板的玻璃基板侧入射，所述第一层紫外防护层和所述第二层紫外防护层均位于所述器件层与所述玻璃基板之间。
  14. 根据权利要求13所述的液晶显示面板，其中所述阵列基板还包括缓冲层，所述缓冲层位于所述玻璃基板与所述器件层之间；
    所述缓冲层为多层结构，包括所述第一层紫外防护层和所述第二层紫外防护层。
  15. 根据权利要求14所述的液晶显示面板，其中所述缓冲层包括第一氮化硅层、氧化硅层、以及第二氮化硅层；所述第一氮化硅层或所述第二氮化硅层中的任一靠近玻璃基板的一层是第一层紫外防护层，而与之相比远离玻璃基板的是第二层紫外防护层。
  16. 根据权利要求9所述的液晶显示面板，其中所述器件层与所述玻璃基板之间还设置有多个光遮挡片，每一所述光遮挡片与一所述薄膜晶体管正对设置并完全覆盖该薄膜晶体管。
  17. 根据权利要求9所述的液晶显示面板，其中所述阵列基板还包括：
    配向膜层，用于使液晶分子按特定方向排列的，所述配向膜层位于所述阵列基板上靠近所述彩膜基板的表面；
    绝缘层，位于所述配向膜层与所述器件层之间，且至少部分区域与所述配向膜层邻接，所述配向膜层对UV光的折射率大于所述绝缘层；
    所述器件层与所述玻璃基板之间还设置有所述第一层紫外防护层和所述第二层紫外防护层。
  18. 根据权利要求17所述的液晶显示面板，其中所述阵列基板还包括：
    缓冲层，位于所述玻璃基板与所述器件层之间；
    所述缓冲层为多层结构，并包括所述第一层紫外防护层和所述第二层紫外防护层。
PCT/CN2015/087618 2015-08-17 2015-08-20 一种液晶显示面板 WO2017028297A1 (zh)

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