WO2017018753A1 - 가요성 기판의 제조방법 - Google Patents
가요성 기판의 제조방법 Download PDFInfo
- Publication number
- WO2017018753A1 WO2017018753A1 PCT/KR2016/008074 KR2016008074W WO2017018753A1 WO 2017018753 A1 WO2017018753 A1 WO 2017018753A1 KR 2016008074 W KR2016008074 W KR 2016008074W WO 2017018753 A1 WO2017018753 A1 WO 2017018753A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- flexible substrate
- substrate layer
- carrier substrate
- layer
- flexible
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 391
- 238000000034 method Methods 0.000 title claims abstract description 103
- 238000004519 manufacturing process Methods 0.000 claims abstract description 66
- 230000008569 process Effects 0.000 claims abstract description 43
- 239000010410 layer Substances 0.000 claims description 135
- 229910052751 metal Inorganic materials 0.000 claims description 77
- 239000002184 metal Substances 0.000 claims description 77
- 229920001721 polyimide Polymers 0.000 claims description 36
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 35
- 239000009719 polyimide resin Substances 0.000 claims description 24
- 125000004432 carbon atom Chemical group C* 0.000 claims description 23
- -1 aromatic diamine compound Chemical class 0.000 claims description 18
- 239000000126 substance Substances 0.000 claims description 17
- 229920000642 polymer Polymers 0.000 claims description 15
- 239000000853 adhesive Substances 0.000 claims description 13
- 230000001070 adhesive effect Effects 0.000 claims description 13
- 238000004804 winding Methods 0.000 claims description 13
- 229920005575 poly(amic acid) Polymers 0.000 claims description 12
- 239000011247 coating layer Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- 125000000217 alkyl group Chemical group 0.000 claims description 9
- 125000003118 aryl group Chemical group 0.000 claims description 9
- 125000001188 haloalkyl group Chemical group 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 8
- 125000006158 tetracarboxylic acid group Chemical group 0.000 claims description 8
- 238000005266 casting Methods 0.000 claims description 6
- 125000002950 monocyclic group Chemical group 0.000 claims description 6
- 150000004985 diamines Chemical class 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 125000000962 organic group Chemical group 0.000 claims description 4
- 125000000732 arylene group Chemical group 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 125000005570 polycyclic cycloalkylene group Chemical group 0.000 claims description 3
- 125000003367 polycyclic group Chemical group 0.000 claims description 3
- 239000011347 resin Substances 0.000 description 23
- 229920005989 resin Polymers 0.000 description 23
- 238000001723 curing Methods 0.000 description 21
- 239000010408 film Substances 0.000 description 21
- 239000011248 coating agent Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 12
- 239000004642 Polyimide Substances 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- NVKGJHAQGWCWDI-UHFFFAOYSA-N 4-[4-amino-2-(trifluoromethyl)phenyl]-3-(trifluoromethyl)aniline Chemical compound FC(F)(F)C1=CC(N)=CC=C1C1=CC=C(N)C=C1C(F)(F)F NVKGJHAQGWCWDI-UHFFFAOYSA-N 0.000 description 9
- 238000001035 drying Methods 0.000 description 8
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 7
- 238000006358 imidation reaction Methods 0.000 description 6
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000000178 monomer Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 3
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 150000004984 aromatic diamines Chemical class 0.000 description 3
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 3
- 125000005997 bromomethyl group Chemical group 0.000 description 3
- 125000004218 chloromethyl group Chemical group [H]C([H])(Cl)* 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 125000004216 fluoromethyl group Chemical group [H]C([H])(F)* 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000000379 polymerizing effect Effects 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- OLQWMCSSZKNOLQ-ZXZARUISSA-N (3s)-3-[(3r)-2,5-dioxooxolan-3-yl]oxolane-2,5-dione Chemical compound O=C1OC(=O)C[C@H]1[C@@H]1C(=O)OC(=O)C1 OLQWMCSSZKNOLQ-ZXZARUISSA-N 0.000 description 2
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 2
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 2
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 description 2
- WCXGOVYROJJXHA-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)S(=O)(=O)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 WCXGOVYROJJXHA-UHFFFAOYSA-N 0.000 description 2
- LJMPOXUWPWEILS-UHFFFAOYSA-N 3a,4,4a,7a,8,8a-hexahydrofuro[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1C2C(=O)OC(=O)C2CC2C(=O)OC(=O)C21 LJMPOXUWPWEILS-UHFFFAOYSA-N 0.000 description 2
- QYIMZXITLDTULQ-UHFFFAOYSA-N 4-(4-amino-2-methylphenyl)-3-methylaniline Chemical compound CC1=CC(N)=CC=C1C1=CC=C(N)C=C1C QYIMZXITLDTULQ-UHFFFAOYSA-N 0.000 description 2
- IGSBHTZEJMPDSZ-UHFFFAOYSA-N 4-[(4-amino-3-methylcyclohexyl)methyl]-2-methylcyclohexan-1-amine Chemical compound C1CC(N)C(C)CC1CC1CC(C)C(N)CC1 IGSBHTZEJMPDSZ-UHFFFAOYSA-N 0.000 description 2
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 2
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 2
- YGYCECQIOXZODZ-UHFFFAOYSA-N 4415-87-6 Chemical compound O=C1OC(=O)C2C1C1C(=O)OC(=O)C12 YGYCECQIOXZODZ-UHFFFAOYSA-N 0.000 description 2
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 2
- HOOIIRHGHALACD-UHFFFAOYSA-N 5-(2,5-dioxooxolan-3-yl)-3-methylcyclohex-3-ene-1,2-dicarboxylic acid Chemical compound C1C(C(O)=O)C(C(O)=O)C(C)=CC1C1C(=O)OC(=O)C1 HOOIIRHGHALACD-UHFFFAOYSA-N 0.000 description 2
- ZHBXLZQQVCDGPA-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)sulfonyl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(S(=O)(=O)C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 ZHBXLZQQVCDGPA-UHFFFAOYSA-N 0.000 description 2
- QHHKLPCQTTWFSS-UHFFFAOYSA-N 5-[2-(1,3-dioxo-2-benzofuran-5-yl)-1,1,1,3,3,3-hexafluoropropan-2-yl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)(C(F)(F)F)C(F)(F)F)=C1 QHHKLPCQTTWFSS-UHFFFAOYSA-N 0.000 description 2
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- WOSVXXBNNCUXMT-UHFFFAOYSA-N cyclopentane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(O)=O)C(C(O)=O)C1C(O)=O WOSVXXBNNCUXMT-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 125000006159 dianhydride group Chemical group 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 125000005647 linker group Chemical group 0.000 description 2
- 229940018564 m-phenylenediamine Drugs 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920000307 polymer substrate Polymers 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000001568 sexual effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- MQQRFOXFIPBFOV-UHFFFAOYSA-N 1,2-dimethylcyclobutane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1(C)C(C(O)=O)C(C(O)=O)C1(C)C(O)=O MQQRFOXFIPBFOV-UHFFFAOYSA-N 0.000 description 1
- WCZNKVPCIFMXEQ-UHFFFAOYSA-N 2,3,5,6-tetramethylbenzene-1,4-diamine Chemical compound CC1=C(C)C(N)=C(C)C(C)=C1N WCZNKVPCIFMXEQ-UHFFFAOYSA-N 0.000 description 1
- UAIUNKRWKOVEES-UHFFFAOYSA-N 3,3',5,5'-tetramethylbenzidine Chemical compound CC1=C(N)C(C)=CC(C=2C=C(C)C(N)=C(C)C=2)=C1 UAIUNKRWKOVEES-UHFFFAOYSA-N 0.000 description 1
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical compound C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 1
- DUTLDPJDAOIISX-UHFFFAOYSA-N 3-(1,1,1,3,3,3-hexafluoropropan-2-yl)aniline Chemical compound NC1=CC=CC(C(C(F)(F)F)C(F)(F)F)=C1 DUTLDPJDAOIISX-UHFFFAOYSA-N 0.000 description 1
- LXJLFVRAWOOQDR-UHFFFAOYSA-N 3-(3-aminophenoxy)aniline Chemical compound NC1=CC=CC(OC=2C=C(N)C=CC=2)=C1 LXJLFVRAWOOQDR-UHFFFAOYSA-N 0.000 description 1
- KRPRVQWGKLEFKN-UHFFFAOYSA-N 3-(3-aminopropoxy)propan-1-amine Chemical compound NCCCOCCCN KRPRVQWGKLEFKN-UHFFFAOYSA-N 0.000 description 1
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 1
- CKOFBUUFHALZGK-UHFFFAOYSA-N 3-[(3-aminophenyl)methyl]aniline Chemical compound NC1=CC=CC(CC=2C=C(N)C=CC=2)=C1 CKOFBUUFHALZGK-UHFFFAOYSA-N 0.000 description 1
- FGWQCROGAHMWSU-UHFFFAOYSA-N 3-[(4-aminophenyl)methyl]aniline Chemical compound C1=CC(N)=CC=C1CC1=CC=CC(N)=C1 FGWQCROGAHMWSU-UHFFFAOYSA-N 0.000 description 1
- VNAOAABUWOXVLO-UHFFFAOYSA-N 3-[3-(1,1,1,3,3,3-hexafluoropropan-2-yl)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(C=CC=2)C(C(F)(F)F)C(F)(F)F)=C1 VNAOAABUWOXVLO-UHFFFAOYSA-N 0.000 description 1
- XUSNPFGLKGCWGN-UHFFFAOYSA-N 3-[4-(3-aminopropyl)piperazin-1-yl]propan-1-amine Chemical compound NCCCN1CCN(CCCN)CC1 XUSNPFGLKGCWGN-UHFFFAOYSA-N 0.000 description 1
- NYRFBMFAUFUULG-UHFFFAOYSA-N 3-[4-[2-[4-(3-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=C(N)C=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=CC(N)=C1 NYRFBMFAUFUULG-UHFFFAOYSA-N 0.000 description 1
- GPXCORHXFPYJEH-UHFFFAOYSA-N 3-[[3-aminopropyl(dimethyl)silyl]oxy-dimethylsilyl]propan-1-amine Chemical compound NCCC[Si](C)(C)O[Si](C)(C)CCCN GPXCORHXFPYJEH-UHFFFAOYSA-N 0.000 description 1
- WECDUOXQLAIPQW-UHFFFAOYSA-N 4,4'-Methylene bis(2-methylaniline) Chemical compound C1=C(N)C(C)=CC(CC=2C=C(C)C(N)=CC=2)=C1 WECDUOXQLAIPQW-UHFFFAOYSA-N 0.000 description 1
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- XTEBLARUAVEBRF-UHFFFAOYSA-N 4-(1,1,1,3,3,3-hexafluoropropan-2-yl)aniline Chemical compound NC1=CC=C(C(C(F)(F)F)C(F)(F)F)C=C1 XTEBLARUAVEBRF-UHFFFAOYSA-N 0.000 description 1
- NWIVYGKSHSJHEF-UHFFFAOYSA-N 4-[(4-amino-3,5-diethylphenyl)methyl]-2,6-diethylaniline Chemical compound CCC1=C(N)C(CC)=CC(CC=2C=C(CC)C(N)=C(CC)C=2)=C1 NWIVYGKSHSJHEF-UHFFFAOYSA-N 0.000 description 1
- OMHOXRVODFQGCA-UHFFFAOYSA-N 4-[(4-amino-3,5-dimethylphenyl)methyl]-2,6-dimethylaniline Chemical compound CC1=C(N)C(C)=CC(CC=2C=C(C)C(N)=C(C)C=2)=C1 OMHOXRVODFQGCA-UHFFFAOYSA-N 0.000 description 1
- FLNVGZMDLLIECD-UHFFFAOYSA-N 4-[(4-amino-3-methyl-5-propan-2-ylphenyl)methyl]-2-methyl-6-propan-2-ylaniline Chemical compound CC1=C(N)C(C(C)C)=CC(CC=2C=C(C(N)=C(C)C=2)C(C)C)=C1 FLNVGZMDLLIECD-UHFFFAOYSA-N 0.000 description 1
- DZIHTWJGPDVSGE-UHFFFAOYSA-N 4-[(4-aminocyclohexyl)methyl]cyclohexan-1-amine Chemical compound C1CC(N)CCC1CC1CCC(N)CC1 DZIHTWJGPDVSGE-UHFFFAOYSA-N 0.000 description 1
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 1
- SSDBTLHMCVFQMS-UHFFFAOYSA-N 4-[4-(1,1,1,3,3,3-hexafluoropropan-2-yl)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C(F)(F)F)C(F)(F)F)C=C1 SSDBTLHMCVFQMS-UHFFFAOYSA-N 0.000 description 1
- UTDAGHZGKXPRQI-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(S(=O)(=O)C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 UTDAGHZGKXPRQI-UHFFFAOYSA-N 0.000 description 1
- PJWQLRKRVISYPL-UHFFFAOYSA-N 4-[4-amino-3-(trifluoromethyl)phenyl]-2-(trifluoromethyl)aniline Chemical group C1=C(C(F)(F)F)C(N)=CC=C1C1=CC=C(N)C(C(F)(F)F)=C1 PJWQLRKRVISYPL-UHFFFAOYSA-N 0.000 description 1
- KZTROCYBPMKGAW-UHFFFAOYSA-N 4-[[4-amino-3,5-di(propan-2-yl)phenyl]methyl]-2,6-di(propan-2-yl)aniline Chemical compound CC(C)C1=C(N)C(C(C)C)=CC(CC=2C=C(C(N)=C(C(C)C)C=2)C(C)C)=C1 KZTROCYBPMKGAW-UHFFFAOYSA-N 0.000 description 1
- CQMIJLIXKMKFQW-UHFFFAOYSA-N 4-phenylbenzene-1,2,3,5-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(=O)O)=CC(C(O)=O)=C1C1=CC=CC=C1 CQMIJLIXKMKFQW-UHFFFAOYSA-N 0.000 description 1
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QLBRROYTTDFLDX-UHFFFAOYSA-N [3-(aminomethyl)cyclohexyl]methanamine Chemical compound NCC1CCCC(CN)C1 QLBRROYTTDFLDX-UHFFFAOYSA-N 0.000 description 1
- OXIKYYJDTWKERT-UHFFFAOYSA-N [4-(aminomethyl)cyclohexyl]methanamine Chemical compound NCC1CCC(CN)CC1 OXIKYYJDTWKERT-UHFFFAOYSA-N 0.000 description 1
- VQQONBUSTPHTDO-UHFFFAOYSA-N [Sn]=O.[In].[Ag].[Sn]=O.[In] Chemical compound [Sn]=O.[In].[Ag].[Sn]=O.[In] VQQONBUSTPHTDO-UHFFFAOYSA-N 0.000 description 1
- LCVIJCNDMKURGL-UHFFFAOYSA-N [Sn]=O.[Zn].[In].[Ag].[Sn]=O.[Zn].[In] Chemical compound [Sn]=O.[Zn].[In].[Ag].[Sn]=O.[Zn].[In] LCVIJCNDMKURGL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- GEQHKFFSPGPGLN-UHFFFAOYSA-N cyclohexane-1,3-diamine Chemical compound NC1CCCC(N)C1 GEQHKFFSPGPGLN-UHFFFAOYSA-N 0.000 description 1
- VKIRRGRTJUUZHS-UHFFFAOYSA-N cyclohexane-1,4-diamine Chemical compound NC1CCC(N)CC1 VKIRRGRTJUUZHS-UHFFFAOYSA-N 0.000 description 1
- 125000004956 cyclohexylene group Chemical group 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- QSDXBQLLEWVRIP-UHFFFAOYSA-N dialuminum silver dizinc oxygen(2-) Chemical compound [O-2].[Zn+2].[Al+3].[Ag+].[O-2].[Zn+2].[Al+3] QSDXBQLLEWVRIP-UHFFFAOYSA-N 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- IWBOPFCKHIJFMS-UHFFFAOYSA-N ethylene glycol bis(2-aminoethyl) ether Chemical compound NCCOCCOCCN IWBOPFCKHIJFMS-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000003518 norbornenyl group Chemical group C12(C=CC(CC1)C2)* 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- UFOIOXZLTXNHQH-UHFFFAOYSA-N oxolane-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C1OC(C(O)=O)C(C(O)=O)C1C(O)=O UFOIOXZLTXNHQH-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical group CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 125000006160 pyromellitic dianhydride group Chemical group 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- UEHUAEMPRCIIOZ-UHFFFAOYSA-N silver dizinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[In+3].[Ag+].[O-2].[Zn+2].[In+3] UEHUAEMPRCIIOZ-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000010888 waste organic solvent Substances 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B7/00—Insulated conductors or cables characterised by their form
- H01B7/04—Flexible cables, conductors, or cords, e.g. trailing cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
Definitions
- the present invention relates to a method for manufacturing a flexible substrate, and more particularly, to a method for more efficiently manufacturing a flexible substrate using a carrier substrate that is easy to peel off the flexible substrate.
- the existing process for manufacturing the flexible substrate is complicated by the application of a solution for manufacturing a flexible substrate containing a solvent on a metal belt or drum, and then produced in the form of a temporary film, followed by separation and drying and curing. There is a problem of low.
- a flexible substrate manufacturing technology including a transparent electrode having a transparent and low resistance is essential.
- the specific resistance has a limit on the material, and in the case of copper, which is widely used, the material has a low enough resistivity, and a material such as silver has a problem that the price is expensive, making it difficult to apply.
- option (2) there are physical limitations due to problems related to circuit design. As a result, the height of the wiring must be increased. In this case, as the height of the wiring increases, problems such as distorting the shape of the wiring, electrical shorts, shorts between wirings, and wiring damage may occur.
- a technique for inserting metal wiring into the substrate includes a method of etching a desired pattern through deposition and etching, and copper, which is difficult to dry-etch for pattern formation. And a damascene method in which a CMP method is applied to a thin film of Cu, and the wiring is embedded in an insulating film groove.
- An object of the present invention is to provide a method in which a flexible substrate can be easily peeled from a carrier substrate and thus a flexible substrate can be produced more easily.
- Another object of the present invention is to provide a manufacturing method that can more easily produce a flexible substrate on which a metal pattern is formed without deposition and etching processes.
- Another object of the present invention is to provide a flexible substrate that can be manufactured and distributed in roll form.
- the present invention to solve the above technical problem
- the method may further include forming a metal pattern on the carrier substrate before forming the flexible substrate layer to manufacture the flexible substrate on which the metal pattern is formed.
- the method may further include forming a hard coating layer on the carrier substrate before forming the flexible substrate layer, thereby manufacturing a flexible substrate having a hard coating layer formed thereon.
- the method may further include forming a hard coating layer on the flexible substrate layer after forming the flexible substrate layer, thereby manufacturing a flexible substrate on which the hard coating layer is formed.
- the method may further include forming a metal pattern after forming a hard coat layer on the flexible substrate layer, thereby manufacturing a flexible substrate having a hard coat layer formed thereon.
- the method may further include forming a hard coat layer on the flexible substrate layer on which the metal pattern is formed, thereby manufacturing the flexible substrate on which the hard coat layer is formed.
- the flexible substrate layer may be prepared by casting a composition comprising an excess of an acid dianhydride on the carrier substrate compared to the diamine, followed by heating and curing.
- At least a portion of the flexible substrate layer may be in direct contact with the carrier substrate including the polyimide resin.
- the metal pattern may be embedded in the flexible substrate layer.
- the carrier substrate layer separated from the flexible substrate layer may further include the step of being collected in the form of a roll.
- the physical stimulus may be a tension applied in the process of winding and collecting the carrier substrate and the flexible substrate layer.
- the flexible substrate layer may have an adhesive force of 1 N / cm or more to the flexible substrate layer before the physical stimulus is applied.
- the flexible substrate layer may have a peel strength of 0.3 N / cm or less.
- the adhesive force (A1) of the carrier substrate layer to the flexible substrate layer before the physical stimulus that does not cause chemical changes to the carrier substrate and the flexible substrate layer, and the flexible after the physical stimulus is applied The ratio A2 / A1 of the adhesion force A2 of the carrier substrate layer to the substrate layer may be 0.001 to 0.5.
- the polyimide-based resin contained in the carrier substrate is a polyamic acid prepared by reacting the aromatic tetracarboxylic dianhydride of Formula 1 with an aromatic diamine compound having a linear structure at a temperature of 200 °C or more It may be prepared by curing.
- A is an aromatic tetravalent organic group of the following Chemical Formula 2a or 2b,
- R 11 to R 14 are each independently an alkyl group having 1 to 4 carbon atoms or a haloalkyl group having 1 to 4 carbon atoms,
- a is an integer of 0-3
- b is an integer of 0-2
- c and e are each independently an integer of 0-3
- d is an integer of 0-4, and f is an integer of 0-3.
- the dianhydride may be reacted in excess of the diamine compound to prepare a polyimide resin included in a carrier substrate.
- the aromatic diamine compound may be an aromatic diamine compound of Formula 4a or 4b.
- R 21 to R 23 are each independently an alkyl group having 1 to 10 carbon atoms or a haloalkyl group having 1 to 10 carbon atoms,
- R 24 and R 25 are each independently selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 10 carbon atoms and a haloalkyl group having 1 to 10 carbon atoms
- q is an integer of 1 or 2
- l, m and n are each independently an integer from 0 to 4, and
- p is an integer of 0 or 1.
- the carrier substrate separated from the flexible substrate layer may be collected and reused.
- the present invention to solve another technical problem
- Carrier substrate supply means for unwinding and supplying a carrier substrate
- Polymer coating means for forming a resin layer for forming a flexible substrate by applying a curable polymer on the carrier substrate;
- Flexible substrate layer collecting means for winding up and collecting the flexible substrate layer laminated on the carrier substrate
- a flexible substrate manufacturing apparatus comprising a carrier substrate collecting means for winding and collecting a carrier substrate from which the flexible substrate layer is separated.
- the manufacturing apparatus may further include patterning means for forming a metal pattern on the carrier substrate.
- a flexible substrate manufactured by the above-described manufacturing method and an electronic device including the same.
- the flexible substrate manufactured by the method according to the present invention has a difference in mechanical strength in the longitudinal direction (MD) and the width direction (TD) within 10 MPa, and a difference in thermal expansion coefficient in the longitudinal direction and the width direction within 5 ppm / ° C. Can be.
- the electronic device may be manufactured by a roll-to-roll process using the flexible substrate in the form of a roll.
- the electronic device may be selected from the group consisting of a solar cell, an organic light emitting diode lighting, a semiconductor device, and a display device, the display device may be a flexible organic electroluminescent device.
- the method of manufacturing a flexible substrate according to the present invention enables the continuous production using a roll-to-roll process and at the same time flexible from the carrier substrate with a relatively small physical stimulus even without a conventional laser or light irradiation process or dissolution process. Since the substrate layer can be easily separated, a flexible substrate used for a flexible display element or the like can be more easily manufactured and the process can be simplified. In addition, the manufacturing cost and time can be reduced, and the deterioration of reliability or failure of the device due to laser or light irradiation can be suppressed.
- the flexible substrate manufactured by the method according to the present invention is obtained after being manufactured while being supported on the carrier substrate, there is no difference in the force applied along the longitudinal and width directions of the substrate to the flexible substrate, resulting in There is an advantage that the difference in mechanical, thermal, and optical properties of the flexible substrate in the longitudinal and width directions is small and uniform.
- the flexible substrate on which the metal wiring is formed can be obtained in the form of a roll, the efficiency of the subsequent device manufacturing process can be improved, and thus the electronic device can be manufactured more efficiently.
- FIG. 1 illustrates a method of manufacturing a flexible substrate according to an embodiment.
- FIG. 2 illustrates a method of manufacturing a flexible substrate on which a metal pattern is formed, according to another embodiment.
- Example 3 is a photograph and SEM image showing a flexible substrate formed with a metal pattern prepared according to Example 2 of the present invention.
- the term "physical stimulus” in the present specification includes a mechanical stimulus that does not cause a chemical change, such as peeling, cutting, friction, tension or compression, unless otherwise specified, and regardless of means or method It means that the laminated cross section of the laminated body in which the sexual substrate was laminated can be exposed. In some cases, a stimulus having an intensity of more than 0 to 0.1 N or less per unit area may be applied. In other words, the application of the physical stimulus means that the laminated cross section of the laminate is exposed regardless of the means. Preferably at least two laminated cross-sections forming the ends of the flexible substrate are exposed at predetermined intervals.
- the 'adhesive force' refers to the adhesion of the carrier substrate to the flexible substrate before the application of the physical stimulus
- the 'peel strength' refers to the adhesion of the carrier substrate to the flexible substrate after the application of the physical stimulus
- the method may further include forming a metal pattern on the carrier substrate before forming the flexible substrate layer, thereby manufacturing a flexible substrate on which the metal pattern is formed.
- the flexible substrate layer is made of a polyimide-based resin, can be prepared by casting a composition containing an excess of the acid dianhydride on the carrier substrate compared to the diamine, and then heated and cured.
- the molar ratio of acid dianhydride: diamine may be in the range of 1: 0.95 to 0.999, preferably 1: 0.98 to 0.995. In this case, there is an effect that can improve the transmittance of the resulting flexible substrate.
- At least a portion of the flexible substrate layer on which the metal pattern is formed on the carrier substrate including the polyimide resin may be in direct contact. That is, a flexible substrate layer having a metal pattern may be directly formed on the carrier substrate without a debonding layer formed between the carrier substrate and the flexible substrate layer to facilitate peeling of the carrier substrate and the flexible substrate layer.
- the metal pattern formed on the flexible substrate layer may be embedded in the flexible substrate layer, which is advantageous in improving the stability and performance of the device by showing the effect of not damaging the structural change of the flexible substrate. .
- the roll-to-roll process is a continuous process, in which a thin material such as a film or copper foil is wound on a rotating roller to apply a specific material or to remove a predetermined portion, thereby preparing a material having a new function and then obtaining it in roll form.
- a method it can be advantageous for mass production and has the advantage of lowering manufacturing costs.
- the flexible substrate manufactured by the process according to the present invention may be manufactured in a roll form, which may be used in a subsequent electronic device process, and particularly useful when the electronic device manufacturing process uses a roll-to-roll process. .
- the carrier substrate that can be used in the process according to the invention can be a flexible substrate comprising a polyimide-based polymer that can be used in a roll-to-roll process. Further, before or after the roll-to-roll process, the carrier substrate may be forming a roll wound in the form of a roll, and may be flattened during the process, and at the same time, heat treatment such as tension and curing process applied during the roll-to-roll process. It may have a structure excellent in heat resistance and chemical resistance that can withstand. In particular, the carrier substrate according to the present invention may have a peeling property that can be easily separated from the flexible substrate after the flexible substrate is manufactured.
- the present invention also provides a flexible substrate produced by the above method.
- the flexible substrate manufactured by the method according to the present invention has a difference in mechanical strength in the longitudinal direction and the width direction within 10 MPa in a form supported by the carrier substrate, and a thermal expansion coefficient difference in the longitudinal direction and the width direction is 5 ppm / It may be within °C.
- the present invention provides an electronic device comprising the flexible substrate.
- the step of separating the flexible substrate and the carrier substrate may be performed simultaneously with the collection of the flexible substrate.
- the physical stimulus separating the flexible substrate and the carrier substrate may be a tension generated during the winding of the collecting means.
- the present invention can peel off the flexible substrate layer formed on the carrier substrate only by physical stimulus, so that the sacrificial layer is formed between the carrier substrate and the substrate layer for the separation of the substrate in the existing process and the sacrifice
- the carrier substrate and the flexible substrate can be separated without the laser or the light irradiation process or the dissolution process which proceeds to remove the layer, so that the flexible substrate can be manufactured more easily.
- the present invention in the production of a flexible substrate, by using a carrier substrate containing a polyimide resin having a predetermined characteristic, in the continuous manufacturing process of the flexible substrate using the roll-to-roll method, laser or light irradiation step
- the flexible substrate can be easily manufactured by easily removing the flexible substrate from the carrier layer by omitting a complicated sacrificial layer removing process and simply applying a physical stimulus, and winding and collecting the flexible substrate to form a roll.
- Flexible substrates can be prepared.
- the flexible substrate has the advantage that the mechanical, optical, and thermal properties of the longitudinal and width directions are uniform, and because it is in the form of a roll, it can be conveniently used in the manufacturing process of the electronic device, for example, manufactured by a roll-to-roll process It can be used in the manufacturing process of the electronic device.
- FIG. 1 illustrates a method of manufacturing a flexible substrate according to an embodiment of the present invention, but the present invention is not limited thereto.
- the carrier substrate 1 is supplied from a carrier substrate supply means 2 having the carrier substrate 1 rolled in a roll shape, and the supplied carrier substrate 1 is transported so that a polymer is formed on the carrier substrate 1.
- the flexible substrate layer 11 may be formed on the carrier substrate by coating and curing the curable polymer 5 by coating means (not shown).
- the flexible substrate layer 11 is wound by the collecting means 10 and collected in a roll form, thereby obtaining a flexible substrate roll.
- FIG. 2 illustrates a method of manufacturing a flexible substrate having a metal pattern according to an embodiment of the present invention, but the present invention is not limited thereto.
- the carrier substrate 1 is supplied from a carrier substrate supply means 2 having a carrier substrate rolled up in roll form, and the patterned means (not shown) on the carrier substrate 1 while the supplied carrier substrate 1 is transferred.
- the flexible substrate layer 13 having the metal pattern is formed by coating and curing the curable polymer 5 on the metal pattern by a polymer coating means (not shown). It can be formed on a substrate.
- the flexible substrate layer 11 having the metal pattern formed thereon is wound by the collecting means 10 and collected in a roll form, thereby obtaining a flexible substrate roll having the metal pattern formed thereon.
- the carrier substrate 1 separated from the flexible substrate layers 11 and 13 may also be collected by a carrier substrate roll by being wound by the carrier substrate collecting means 20, or may be connected to the carrier substrate supply means 2 and supplied again. Thereby being reused in the manufacture of flexible substrates.
- the action and effect of the carrier substrate having the easy peeling characteristics may be expressed due to the characteristics of the following polyimide resin.
- the polyimide resin included in the carrier substrate 1 is controlled to have an imidization ratio in an appropriate range, and exhibits a certain level or more of adhesive strength during the process of manufacturing the flexible substrate layers 11 and 13, but the flexible After the manufacturing process of the substrate is completed, it can be easily separated while the adhesive force to the flexible substrate is reduced by a simple physical stimulus such as a laser or light irradiation, or a tension applied by the winding means without the melting process.
- the carrier substrate has a ratio (A2 / A1) of adhesion strength A1 to the flexible substrate layer before the physical stimulus is applied and adhesion force A2 to the flexible substrate after the physical stimulus is applied, 0.001 to 0.5, Preferably from 0.001 to 0.1, a simple physical stimulus such as tension applied by the winding means without laser or light irradiation can be easily separated from the flexible substrate.
- the carrier substrate exhibits an adhesion of at least about 1 N / cm, or at least about 2 N / cm, or about 3 to 5 N / cm to the flexible substrate layer before the physical stimulus is applied. It may then exhibit a peel strength of about 0.3 N / cm or less, for example about 0.2 N / cm or less, or about 0.1 N / cm or less, or about 0.001 to 0.05 N / cm.
- the peel strength of the carrier substrate may be measured under the conditions of Table 1 below.
- Peel strength measurement condition Film width (mm) 10 Film length (mm) 100 Speed (mm / min) 50 Measuring instrument Texture Analyser (TA.XT plus, manufactured by Stable micro systems) Peeling angle 90 °
- the peel strength is obtained by preparing a laminate sample in which a flexible substrate is sequentially formed on a carrier substrate, cutting the laminate sample into a rectangular shape having a width of 10 mm as a physical stimulus, and then cutting the end of the flexible substrate. It can calculate by measuring under the measuring apparatus and conditions mentioned above the force which takes when a part is caught and peeled off at 90 degrees from a flexible substrate layer.
- the adhesive force is to prepare a laminate sample in which a flexible substrate is sequentially formed on a carrier substrate having a rectangular size of 100mm in width, in which the end of the flexible substrate is pasted with a tape of 10mm in width It can be calculated by measuring the force taken when grabbing and detaching at a 90 ° angle from the carrier substrate, wherein the force measuring device and condition can be the same as the measuring device and condition of peel strength shown in Table 1 above.
- the adhesion and peel strength of such a carrier substrate can be achieved by the imidization ratio of the polyimide resin contained in the carrier substrate, and the imidation ratio is a kind and content of a monomer for forming a polyimide resin, and imidization conditions. (Heat treatment temperature and time, etc.) and the like.
- the above-described adhesion and peel strength conditions of the carrier substrate can be satisfied, and even if the laser or light irradiation is omitted, the flexible substrate layers 11 and 13 are applied to the carrier substrate 1 by only physical stimulation.
- the polyimide resin may have an imidation ratio of about 60% to 99%, or about 70% to 98%, or about 75 to 96%. have.
- the imidation ratio of the polyimide-based resin is about 1350-1400 cm - of the IR spectrum after applying a composition containing a precursor of polyimide, for example, a polyamic acid-based resin, and performing imidization at a temperature of about 500 ° C. or higher.
- the integral intensity of the CN band represented by 1 is 100%, it may be displayed as measured as the relative integral intensity ratio of the CN band after the imidization is performed at the imidization temperature of about 200 ° C. or more.
- the imidation range of the polyimide-based resin as described above may be achieved by controlling the curing temperature conditions during the curing process for the polyamic acid-based resin.
- a composition containing a polyamic acid resin which is a precursor of polyimide resin, is applied onto the carrier substrate, and at a temperature of about 200 ° C. or higher, or 250 ° C. to 500 ° C.
- a carrier substrate When cured to form a carrier substrate, about 0.3 N / including polyimide resin having an imidation ratio of about 60% to 99%, or about 70% to 98%, or about 75 to 96% as described above
- a carrier substrate having a peel strength of cm or less can be formed.
- the polyimide resin produced by controlling the curing temperature as described above has a glass transition temperature (T g ) of about 200 ° C. or higher, or about 300 ° C. or higher, or about 350 to 500 ° C., and 400 ° C. or higher. Or, it may have a decomposition temperature (T d ) of 400 to 600 °C.
- T g glass transition temperature
- T d decomposition temperature
- the carrier substrate has a thermal expansion of about 30 ppm / ° C. or less, or about 25 ppm / ° C. or less, or about 20 ppm / ° C. or less, or about 1 to 17 ppm / ° C. under conditions of 100 to 200 ° C. It may have a coefficient of thermal expansion (CTE) and 1% pyrolysis temperature (Td1%) of 450 ° C or more, or 470 ° C or more.
- CTE coefficient of thermal expansion
- Td1% pyrolysis temperature
- the carrier substrate 1 that satisfies the above structural and physical requirements is cleanly peeled off from the flexible substrates 11 and 13, so that the transparency and the optical characteristics of the substrate for the element including the flexible substrate are reduced. Does not affect
- the carrier substrate 1 cleanly separated from the flexible substrates 11 and 13 may be wound up by the carrier substrate collecting means 20 to form a carrier substrate roll and resupplyed to a supply part of the manufacturing apparatus, or
- the collection means 20 can be directly connected to the carrier substrate supply means 2 so that the collected carrier substrate can be reused to produce the flexible substrate.
- the polyamic acid-based resin as the above-described polyimide-based resin or a precursor thereof may be formed by polymerization and imidization using arbitrary tetracarboxylic dianhydride compounds and diamine compounds as monomers.
- tetracarboxylic dianhydride compound examples include pyromellitic dianhydride (PMDA), 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride (3, 3'4,4'-biphenyl tetracarboxylic acid dianhydride (BPDA), meso-butane-1,2,3,4-tetracarboxylic dianhydride (meso-butane-1,2,3,4-tetracarboxylic dianhydride), 3,3 ', 4,4'-benzophenonetetracarboxylic dianhydride (3,3', 4,4'-benzophenone tetracarboxylic dianhydride, BTDA), 2,3,3 ', 4'-diphenylethertetra Carboxylic dianhydrides (2,3,3 ', 4'-diphenylether tetracarboxylic dianhydride, ODPA), 3,3
- each said monomer as a specific example of a diamine compound, p-phenylenediamine (PDA), m-phenylenediamine (m-PDA), 2,4,6-trimethyl-1,3-phenyl Lendiamine, 2,3,5,6-tetramethyl-1,4-phenylenediamine, 4,4'-diaminodiphenylether, 3,4'-diaminodiphenylether, 3,3 ' -Diaminodiphenyl ether, 4,4'-diaminodiphenylsulfide, 4,4'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 3,3'-diaminodiphenyl Methane, 4,4'-methylene-bis (2-methylaniline), 4,4'-methylene-bis (2,6-dimethylaniline), 4,4'-methylene-bis (2,6-diethylaniline ), 4,4'-m
- the acid dianhydride is aromatic in order to more suitably meet the physical properties required for the carrier substrate such as the low CTE range and peel strength described above. It is important not to have a linker structure between the rings.
- aromatic tetracarboxylic dianhydride of the following formula (1) may be preferable.
- A is an aromatic tetravalent organic group derived from an acid dianhydride, specifically, may be an aromatic tetravalent organic group represented by the following Formula 2a or 2b.
- R 11 to R 14 are each independently an alkyl group having 1 to 4 carbon atoms (eg, methyl group, ethyl group, propyl group, etc.) or a haloalkyl group having 1 to 4 carbon atoms (eg, fluoromethyl group, bromomethyl group, chloro Methyl group, trifluoromethyl group, etc.), and
- a may be an integer of 0 to 3
- b is an integer of 0 to 2
- c and e are each independently an integer of 0 to 3
- d is an integer of 0 to 4
- f may be an integer of 0 to 3
- c, d and e are integers of zero.
- the tetracarboxylic dianhydride is pyromellitic dianhydride (PMDA) of Chemical Formula 3a, or has a linear structure as in Chemical Formula 3b, and two aromatic rings are directly connected without a linker structure. It may be more preferred that it is 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride (BPDA):
- PMDA pyromellitic dianhydride
- BPDA 4,4'-biphenyltetracarboxylic dianhydride
- the packing density of the carrier substrate (1) the higher the packing density of the carrier substrate (1), the less the intermolecular space and the lower the binding force due to mutual penetration. As a result, the adhesive strength to the flexible substrate layer 11 formed on the carrier substrate 1 and the peeling strength of the flexible substrate from the laminate become low.
- the packing density can be represented by CTE. The higher the packing density, the lower the CTE value, and the lower the CTE, the higher the packing density. Therefore, in order to more suitably meet the physical property requirements of the carrier substrate described above, it is preferable to use an aromatic diamine compound having a linear structure, specifically, an aromatic diamine compound of the following formula 4a or 4b among the above-described diamine compounds. desirable:
- R 21 to R 23 are each independently an alkyl group having 1 to 10 carbon atoms (eg, methyl group, ethyl group, propyl group, etc.) or a haloalkyl group having 1 to 10 carbon atoms (eg, fluoromethyl group, bromomethyl group, Chloromethyl group, trifluoromethyl group, etc.),
- l, m and n are each independently an integer of 0 to 4, preferably 0, and
- p is an integer of 0 or 1, Preferably it is 0.
- Examples of such a preferred aromatic diamine-based compound include p-phenylenediamine (PDA), benzidine (BZD), m-tolidine, or 2,2'-bis (trifluoromethyl) -benzidine (2,2 ' -bis (trifluoromethyl) benzidine, TFMB) and the like.
- PDA p-phenylenediamine
- BZD benzidine
- m-tolidine or 2,2'-bis (trifluoromethyl) -benzidine (2,2 ' -bis (trifluoromethyl) benzidine, TFMB) and the like.
- Each of these monomers is polymerized in a polar organic solvent to prepare a polyamic acid resin, and in the presence or absence of an imidization catalyst such as an amine catalyst, the polyamic acid resin is imidized under the above-described curing temperature conditions.
- an imidization catalyst such as an amine catalyst
- a polyimide resin and a carrier substrate including the same may be manufactured.
- the molar ratio of tetracarboxylic acid: diamine can be 1: 0.95-0.995, Preferably it is the range of 1: 0.98-0.95.
- the thickness and size of the carrier substrate 1 may be appropriately selected according to the type of device to be applied, but considering the transparency of the substrate, the carrier substrate 1 has a thickness of 0.01 to 50mm, or 0.02 to It may be desirable to have a thickness of 20 mm.
- the thickness range as described above can have excellent mechanical strength can exhibit excellent support properties for the flexible substrate.
- the adhesive force with the carrier substrate may increase, but when too thin, the peelability may be reduced due to the increase of the adhesive force with the flexible substrate. Therefore, in order to show high adhesive force with a carrier substrate and high peelability with a flexible substrate, it is preferable to have said thickness range.
- the carrier substrate layer can be produced by any method capable of producing a self supporting film such as a tenter method and a cast method.
- the carrier substrate layer may be manufactured by casting on a support and then drying at 100 to 150 ° C. and curing at 150 to 400 ° C. to cure while gradually raising the temperature of the curing process. It is preferable.
- a metal fine pattern may be formed on the carrier substrate before the resin for forming the flexible substrate is coated on the carrier substrate, thereby forming the flexible substrate on which the metal pattern is formed.
- the flexible substrate on which the metal pattern is formed may be formed in a form in which the metal pattern is embedded by forming a metal pattern on the flexible substrate layer and coating and curing a polymer.
- the metal pattern is embedded in the substrate, the sheet resistance with the transparent electrode can be reduced, and the efficiency of the device can be improved, and even if the shape of the flexible substrate is deformed, Since disconnection can be prevented, it may be a very useful form for the application of a flexible device.
- the metal pattern is a metal such as silver (Ag), copper (Cu), aluminum (Al), gold (Au), platinum (Pt), nickel (Ni), titanium (Ti), molybdenum (Mo), or an alloy thereof.
- the pattern formation method of the metal pattern inkjet printing, gravure printing, gravure offset, aerosol printing, electroplating, vacuum deposition, thermal deposition, sputtering, electron beam deposition, etc. on the carrier substrate layer or flexible substrate layer It may be formed by a method such as coating or deposition.
- the metal patterns may be arranged at intervals of 0.05 to 50 mm.
- the metal patterns are densely arranged at intervals of less than 0.05 mm, there is a problem of an increase in process cost.
- the metal patterns are arranged at intervals of more than 50 mm, a role as an auxiliary electrode is insignificant. There is a problem that the sheet resistance cannot be lowered effectively.
- the width of the metal pattern is preferably 0.5 to 1000 ⁇ m. In the case where the width of the metal pattern is less than 0.5 ⁇ m, if a complicated process for forming a fine pattern is required, the resistance of the metal pattern increases, and when the width of the metal pattern exceeds 1000 ⁇ m, There is a problem that the transmittance is lowered.
- the metal pattern may be used as an auxiliary electrode in an electronic device, and in a solar cell, an organic light emitting diode illumination, a semiconductor device, and a display device, a transparent part having an exposed portion of the metal pattern 3 on a substrate is provided. Direct contact with the electrode can lower their sheet resistance.
- the contact between the metal pattern 3 and the transparent electrode is not limited thereto, and even when the entire metal pattern is embedded in the flexible substrate, the auxiliary electrode is connected to the metal pattern through an auxiliary means for connecting the transparent electrode and the metal pattern. It can be used as.
- the formed flexible substrate layers 11 and 13 according to the present invention may be wound by the flexible substrate collecting means 10 as shown in FIGS. 1 and 2 to form a flexible substrate in the form of a roll.
- the present invention may be used to manufacture a device including a sexual substrate, and more specifically, may be used in a method of manufacturing an electronic device using a roll-to-roll continuous manufacturing process.
- the carrier substrate itself exhibits an appropriate adhesive force to the flexible substrate and the like, while being able to properly fix and support the flexible substrate during the device manufacturing process, while separating the flexible substrate.
- a process such as laser or light irradiation
- the manufacturing process of the device having the flexible substrate can be greatly simplified, and the manufacturing cost thereof can also be significantly lowered.
- a device substrate and a method for manufacturing the same including the flexible substrate manufactured by the manufacturing method.
- the flexible substrate Since the flexible substrate is subjected to a process supported by a carrier substrate, the flexible substrate is hardly changed in tension, and thus the mechanical, thermal, and optical properties of the longitudinal and width directions are uniform.
- the difference in mechanical strength is within 10 MPa, or within 5 MPa, or within 3 MPa
- the difference in thermal expansion coefficient in the longitudinal and width directions is within 5 ppm / ° C, or within 3 ppm / ° C, or 1 ppm / ° C. Can be within.
- the device can be any solar cell (eg, flexible solar cell) with a flexible substrate, organic light emitting diode (OLED) illumination (eg, flexible OLED lighting), any semiconductor with a flexible substrate.
- OLED organic light emitting diode
- Device or a flexible display device such as an organic electroluminescent device, an electrophoretic device, or an LCD device having a flexible substrate, and among them, an organic electroluminescent device may be preferable.
- the device may perform a step of forming a device structure on the flexible substrate (ie, device manufacturing process step), wherein the device structure includes a gate electrode.
- a step of forming a device structure on the flexible substrate ie, device manufacturing process step
- the device structure includes a gate electrode.
- the type of device to be formed on a flexible substrate such as a semiconductor device structure, a display device structure including a thin film transistor array, a diode device structure having a P / N junction, an OLED structure including an organic light emitting layer, or a solar cell structure It can be a conventional device structure.
- the transparent electrode is located on the back surface exposed the metal pattern of the flexible substrate in the substrate, including an indium tin oxide (ITO); A light emitting part disposed on a rear surface of the transparent electrode and including an organic compound; And located on the back of the light emitting portion, it may include a metal electrode containing a metal, such as aluminum.
- ITO indium tin oxide
- the method may further include forming a hard coating layer on the carrier substrate before or after forming the flexible substrate layer, thereby manufacturing a flexible substrate on which the hard coating layer is formed.
- a flexible substrate on which a hard coat layer is formed may be manufactured.
- the hard coating layer may be applied without limitation as long as it is generally used in the related art, and thus a detailed description thereof will be omitted.
- the manufacturing process of the device including the flexible substrate may be a roll-to-roll process
- the roll-shaped flexible substrate is suitable for use in the roll-to-roll process, it can be flattened during the process,
- the metal pattern formed on the flexible substrate can withstand the forces acting in the roll-to-roll process by improving mechanical properties such as impact resistance.
- the device manufacturing process can be simplified, the manufacturing cost can be greatly reduced, and the reliability of the device due to laser or light irradiation can be reduced or Defects can also be suppressed, and the flexible substrate on which the metal pattern is formed can reduce the sheet resistance of the transparent electrode as the metal pattern is embedded in the substrate, thereby improving the efficiency of the device, and the flexible substrate. Even if the shape of the metal pattern can be prevented from being damaged or broken, it can be useful for the application of the flexible (flexible) device according to the present invention.
- a drying process at a temperature of 120 ° C. and 150 ° C.
- the curing process (30 minutes) was performed continuously at the temperature of -230 ° C-300 ° C-400 ° C to prepare a film containing a polyimide resin (carrier substrate) having a thickness of 50 microns in a roll form.
- a composition for forming a flexible substrate including 12 wt% of a polyamic acid resin prepared by polymerizing 1 mol of BPDA and 0.99 mol of TFMB and 88 wt% of DMAc as a solvent was prepared.
- the roll-shaped carrier substrate was uncoiled and transported at a rate of 0.5 m / min, and the composition for forming a flexible substrate was applied (cast) to a thickness of 15 ⁇ m after drying, thereby forming a polymer layer of the resulting flexible substrate.
- a drying step at a temperature of 100 ° C. and a curing step of 300 minutes at 300 ° C. were continuously performed to form a polymer layer (flexible substrate layer) containing a polyimide resin.
- the carrier substrate is cut to an indefinite depth (after applying a physical stimulus exposing the cross section of the flexible substrate layer without causing chemical change of the carrier substrate layer) and pressure sensitive adhesive tape (Pressure sensitive) adhesive tape, adhesion strength 43 ⁇ 6 g / mm), and then the carrier substrate and the flexible substrate were separated and wound by attaching the end of the tape to the take-up roll and winding with 5N tension.
- a carrier substrate containing BPDA-PDA polyimide resin and a flexible substrate layer containing BPDA-TFMB polyimide resin were obtained in roll form.
- the longitudinal (MD) and width (TD) mechanical properties of the flexible substrate layer thus prepared were evaluated as follows.
- the mechanical properties (modulus, peak stress, elongation) of the film were measured using Instron's UTM. Specifically, the film was cut to 5mmx60mm or more, and the gap between the grips was set to 40mm to check the tensile strength while pulling the spring at a speed of 20mm / min.
- the coefficient of thermal expansion (CTE) and dimensional change of the film were measured using Q400 of TA.
- a 15 micron thick film was prepared in a size of 5 mm x 20 mm, and then a sample was loaded using an accessory. The length of the film actually measured was made the same at 16 mm.
- the film pulling force was set to 0.02N, and the measurement start temperature was heated to 300 ° C at a rate of 5 ° C / min at 30 ° C, and then cooled to 80 ° C at -5 ° C / min, and then again at 5 ° C / min. It heated to 400 degreeC by speed
- Example 2 In the same manner as in Example 1, but as shown in Figure 2, before applying the composition for forming a flexible substrate on the carrier substrate, aluminum was deposited to a thickness of 200nm on the carrier substrate and the fine pattern was patterned. Specifically, a silicon-based pattern having a micropattern formed by coating a resist ink on a silicon blanket in front and then contacting the cliché with a micro pattern engraved on the blanket to form a pattern on the silicon-based blanket and then removing some coating film. The blanket was prepared. The resist ink fine pattern formed on the silicon blanket was transferred to aluminum deposited on the carrier substrate, and then dried in an oven at 115 ° C. for 3 minutes to remove the solvent remaining in the resist pattern.
- the resist-patterned aluminum substrate was etched by spray using the etching solution at a temperature of 45 ° C. After cleaning and drying the etchant with deionized water, the remaining resist ink was removed using a stripper to produce aluminum wiring on the carrier substrate.
- the thickness was 15 ⁇ m. (Casting), and a polyimide-based resin was continuously subjected to a drying step at a temperature of 100 ° C. and a curing step of 30 minutes at 300 ° C. with respect to the resulting coating film for forming a polymer layer of a flexible substrate.
- the containing polymer layer (flexible substrate layer) was formed.
- a carrier substrate and a flexible substrate having metal wirings embedded therein were obtained in rolls.
- FIG. 3 shows a manufacturing process of a flexible substrate layer on which aluminum wiring is formed and a photograph (right side) thereof, and an SEM image (left side) of an aluminum wiring, a flexible substrate layer, and a carrier substrate layer. As can be seen from FIG. 3, it can be seen that the aluminum wiring is completely transferred to the flexible substrate layer and does not remain on the carrier substrate.
- the flexible substrate manufactured by the method according to the present invention has an advantage that the difference in mechanical, thermal, and optical properties in the longitudinal direction and the width direction is small and uniform.
- the method according to the present invention can obtain a flexible substrate having a metal wiring in the form of a roll, it is possible to increase the efficiency of the subsequent device manufacturing process.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Laminated Bodies (AREA)
Abstract
Description
박리강도측정조건 | 필름 폭(mm) | 10 |
필름 길이(mm) | 100 | |
속도(mm/min) | 50 | |
측정 기기 | Texture Analyser(TA.XT plus, Stable micro systems사제) | |
박리각도 | 90° |
경화 온도 (℃) | 150 | 200 | 250 | 300 | 350 | 500 |
이미드화율 (%) | 10.36 | 49.21 | 79.34 | 92.78 | 95.69 | 100 |
박리 강도 (N/cm) | 2.8 | 2.8 | 0.03 | 0.016 | 0.03 | 0.35 |
구분 | MD | TD |
기계적 강도 (tensile strength) | 250 MPa | 252 MPa |
열팽창 계수(ppm/℃) | 13.4 | 13.8 |
Claims (21)
- 폴리이미드계 수지를 포함하는 캐리어 기판을 공급하는 단계;상기 캐리어 기판상에 경화성 고분자를 포함하는 가요성 기판층을 형성하는 단계;상기 캐리어 기판 및 가요성 기판층의 화학적 변화를 야기하지 않는 물리적 자극을 가하여 상기 가요성 기판층을 캐리어 기판층과 분리시키는 단계; 및상기 캐리어 기판층과 분리된 가요성 기판층을 권취하여 롤 형태로 수거하는 단계를 포함하며, 상기 단계들이 롤투롤(roll to roll) 공정에 의해 수행되는 것인 가요성 기판의 제조방법.
- 제1항에 있어서,상기 가요성 기판층은 다이아민에 비해 과량의 산이무수물을 포함하는 조성물을 상기 캐리어 기판 상에 캐스팅한 후 가열 및 경화하여 제조하는 것인 가요성 기판의 제조방법.
- 제1항에 있어서, 상기 가요성 기판층 형성전에 상기 캐리어 기판상에 금속패턴을 형성하는 단계를 더 포함함으로써 금속패턴이 형성된 가요성 기판을 제조하는 것인 가요성 기판의 제조방법.
- 제1항에 있어서, 상기 가요성 기판층 형성 전에 상기 캐리어 기판 상에 하드코팅층을 형성하는 단계를 더 포함함으로써 하드코팅층이 형성된 가요성 기판을 제조하는 것인 가요성 기판의 제조방법.
- 제1항에 있어서, 상기 가요성 기판층 형성 후 가요성 기판층 상에 하드코팅층을 형성하는 단계를 더 포함함으로써 하드코팅층이 형성된 가요성 기판을 제조하는 것인 가요성 기판의 제조방법.
- 제5항에 있어서, 상기 하드코팅층 상에 금속패턴을 형성하는 단계를 더 포함하는 가요성 기판의 제조방법.
- 제3항에 있어서, 상기 금속패턴이 형성된 가요성 기판층 상에 하드코팅층을 형성하는 단계를 더 포함함으로써 하드코팅층이 형성된 가요성 기판을 제조하는 것인 가요성 기판의 제조방법.
- 제3항에 있어서,상기 폴리이미드계 수지를 포함하는 캐리어 기판상에 상기 가요성 기판층의 적어도 일부가 직접적으로 접촉하고 있는 것인 가요성 기판의 제조방법.
- 제3항에 있어서,상기 금속패턴이 상기 가요성 기판층에 매립되어 있는 형태인 가요성 기판의 제조방법.
- 제1항에 있어서,상기 가요성 기판층과 분리된 상기 캐리어 기판층이 권취되어 롤 형태로 수거되는 단계를 더 포함하는 가요성 기판의 제조방법.
- 제1항에 있어서,상기 물리적 자극은 상기 캐리어 기판 및 가요성 기판층을 권취하여 수거하는 공정에서 가해지는 장력인 것인 가요성 기판의 제조방법.
- 제1항에 있어서,상기 가요성 기판층이 상기 물리적 자극이 가해지기 전 상기 가요성 기판층에 대해 1 N/cm 이상의 접착력을 갖는 가요성 기판의 제조방법.
- 제1항에 있어서,상기 물리적 자극이 가해진 후 상기 가요성 기판층에 대해 0.3N/cm 이하의 박리 강도(peel strength)를 갖는 가요성 기판의 제조방법.
- 제1항에 있어서,상기 캐리어 기판과 가요성 기판층에 화학적 변화를 야기하지 않는 물리적 자극이 가해지기 전 가요성 기판층에 대한 캐리어 기판층의 접착력(A1)과, 상기 물리적 자극이 가해진 후 가요성 기판층에 대한 캐리어 기판층의 접착력(A2)의 비(A2/A1)가 0.001 내지 0.5 인 가요성 기판의 제조방법.
- 제1항에 있어서,상기 캐리어 기판에 포함된 폴리이미드계 수지가 하기 화학식 1의 방향족 테트라카르복실산 이무수물과 직선형 구조를 갖는 방향족 다이아민 화합물을 반응시켜 제조한 폴리아믹산을 200℃ 이상의 온도에서 경화시켜 제조된 것인 가요성 기판의 제조방법:[화학식 1](상기 화학식 1에서, A는 하기 화학식 2a 또는 2b의 방향족 4가 유기기이며,[화학식 2a][화학식 2b]상기 화학식 2a 및 2b에서,R11 내지 R14는 각각 독립적으로 탄소수 1 내지 4의 알킬기 또는 탄소수 1 내지 4의 할로알킬기이고,a는 0 내지 3의 정수, b는 0 내지 2의 정수, c 및 e는 각각 독립적으로 0 내지 3의 정수, d는 0 내지 4의 정수, 그리고 f는 0 내지 3의 정수이다.
- 제15항에 있어서,상기 이무수물을 상기 다이아민 화합물에 비해 과량으로 반응시키는 것인 가요성 기판의 제조방법.
- 제16항에 있어서,상기 방향족 다이아민 화합물은 하기 화학식 4a 또는 4b의 방향족 다이아민 화합물인 것인 가요성 기판의 제조방법:[화학식 4a][화학식 4b]상기 식에서,R21 내지 R23은 각각 독립적으로, 탄소수 1 내지 10의 알킬기 또는 탄소수 1 내지 10의 할로알킬기이고,X는 각각 독립적으로 -O-, -CR24R25-, -C(=O)-, -C(=O)O-, -C(=O)NH-, -S-, -SO-, -SO2-, -O[CH2CH2O]q-, 탄소수 6 내지 18의 일환식 또는 다환식의 시클로알킬렌기, 탄소수 6 내지 18의 일환식 또는 다환식의 아릴렌기 및 이들의 조합으로 이루어진 군에서 선택되며, 이때 상기 R24 및 R25는 각각 독립적으로 수소원자, 탄소수 1 내지 10의 알킬기 및 탄소수 1 내지 10의 할로알킬기로 이루어진 군에서 선택되며, q는 1 또는 2의 정수이고,l, m 및 n은 각각 독립적으로 0 내지 4의 정수이고, 그리고p은 0 또는 1의 정수이다.
- 제1항 내지 제17항 중 어느 한 항에 따른 제조방법으로 제조되며, 길이방향 및 폭방향의 기계적 강도 차이가 10MPa 이내이고, 길이방향 및 폭방향의 열팽창계수 차이가 5 ppm/℃ 이내인 가요성 기판.
- 제18항의 가요성 기판을 포함하는 전자소자.
- 제19항에 있어서,상기 전자소자가 태양전지, 유기발광다이오드 조명, 반도체 소자, 및 디스플레이 소자로 이루어진 군에서 선택되는 것인 전자소자.
- 제20항에 있어서,상기 디스플레이 소자가 플렉서블 유기전계발광소자인 것인 전자소자.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP16830786.6A EP3327731B1 (en) | 2015-07-24 | 2016-07-25 | Method for fabricating flexible substrate |
JP2017530032A JP6429137B2 (ja) | 2015-07-24 | 2016-07-25 | 可撓性基板の製造方法 |
US15/527,261 US10517171B2 (en) | 2015-07-24 | 2016-07-25 | Method for fabricating flexible substrate |
CN201680003320.XA CN107073915B (zh) | 2015-07-24 | 2016-07-25 | 用于制造柔性基底的方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2015-0104964 | 2015-07-24 | ||
KR20150104964 | 2015-07-24 | ||
KR10-2016-0093295 | 2016-07-22 | ||
KR1020160093295A KR20170012123A (ko) | 2015-07-24 | 2016-07-22 | 가요성 기판의 제조방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017018753A1 true WO2017018753A1 (ko) | 2017-02-02 |
Family
ID=57884704
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2016/008074 WO2017018753A1 (ko) | 2015-07-24 | 2016-07-25 | 가요성 기판의 제조방법 |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2017018753A1 (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019012165A (ja) * | 2017-06-30 | 2019-01-24 | 大日本印刷株式会社 | 表示装置用部材 |
WO2019116951A1 (ja) * | 2017-12-15 | 2019-06-20 | 東レ株式会社 | 高分子薄膜の製造装置および製造方法 |
CN110739397A (zh) * | 2018-07-02 | 2020-01-31 | 霍尼韦尔特性材料和技术(中国)有限公司 | 一种柔性显示器基板、其制备方法及其应用 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5360647A (en) * | 1990-09-28 | 1994-11-01 | Daicel Chemical Industries, Ltd. | Composite metal sheets |
KR101291703B1 (ko) * | 2012-12-04 | 2013-07-31 | 주식회사 남영기계 | 연성 인쇄회로기판 제작용 롤투롤타입 와인더장치 |
KR20140028243A (ko) * | 2012-08-28 | 2014-03-10 | 한국기계연구원 | 금속배선이 함입된 유연기판 제조 장치 |
KR20140122205A (ko) * | 2013-04-09 | 2014-10-17 | 주식회사 엘지화학 | 디스플레이 소자의 제조방법 및 이를 이용하여 제조된 디스플레이 소자 |
KR20150047002A (ko) * | 2013-10-23 | 2015-05-04 | (주)창성 | 금속 박막을 포함하는 캐리어 필름 제조 방법 및 이를 이용한 복합필름. |
-
2016
- 2016-07-25 WO PCT/KR2016/008074 patent/WO2017018753A1/ko active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5360647A (en) * | 1990-09-28 | 1994-11-01 | Daicel Chemical Industries, Ltd. | Composite metal sheets |
KR20140028243A (ko) * | 2012-08-28 | 2014-03-10 | 한국기계연구원 | 금속배선이 함입된 유연기판 제조 장치 |
KR101291703B1 (ko) * | 2012-12-04 | 2013-07-31 | 주식회사 남영기계 | 연성 인쇄회로기판 제작용 롤투롤타입 와인더장치 |
KR20140122205A (ko) * | 2013-04-09 | 2014-10-17 | 주식회사 엘지화학 | 디스플레이 소자의 제조방법 및 이를 이용하여 제조된 디스플레이 소자 |
KR20150047002A (ko) * | 2013-10-23 | 2015-05-04 | (주)창성 | 금속 박막을 포함하는 캐리어 필름 제조 방법 및 이를 이용한 복합필름. |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019012165A (ja) * | 2017-06-30 | 2019-01-24 | 大日本印刷株式会社 | 表示装置用部材 |
WO2019116951A1 (ja) * | 2017-12-15 | 2019-06-20 | 東レ株式会社 | 高分子薄膜の製造装置および製造方法 |
JPWO2019116951A1 (ja) * | 2017-12-15 | 2020-10-22 | 東レ株式会社 | 高分子薄膜の製造装置および製造方法 |
JP7156036B2 (ja) | 2017-12-15 | 2022-10-19 | 東レ株式会社 | 高分子薄膜の製造装置および製造方法 |
CN110739397A (zh) * | 2018-07-02 | 2020-01-31 | 霍尼韦尔特性材料和技术(中国)有限公司 | 一种柔性显示器基板、其制备方法及其应用 |
CN110739397B (zh) * | 2018-07-02 | 2024-05-14 | 霍尼韦尔特性材料和技术(中国)有限公司 | 一种柔性显示器基板、其制备方法及其应用 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101917559B1 (ko) | 가요성 기판의 제조방법 | |
WO2014168402A1 (ko) | 적층체 및 이를 이용하여 제조된 기판을 포함하는 소자 | |
WO2014163352A1 (en) | Polyimide cover substrate | |
WO2015183056A1 (ko) | 폴리이미드계 용액 및 이를 이용하여 제조된 폴리이미드계 필름 | |
WO2019088454A1 (ko) | 초박막 블랙 폴리이미드 필름 및 이의 제조방법 | |
WO2016108491A1 (ko) | 가교형 수용성 열가소성 폴리아믹산을 이용한 열융착 다층 폴리이미드 필름, 및 이의 제조방법 | |
WO2017111289A1 (ko) | 지환족 모노머가 적용된 폴리아믹산 조성물 및 이를 이용한 투명 폴리이미드 필름 | |
WO2019093669A2 (ko) | 초박막 블랙 폴리이미드 필름 및 이의 제조방법 | |
WO2020138687A1 (ko) | 디스플레이 기판 제조용 폴리아믹산 조성물 및 이를 이용하여 디스플레이용 기판을 제조하는 방법 | |
WO2020091432A1 (ko) | 폴리이미드 필름의 접착성을 향상시키기 위한 폴리이미드 전구체 조성물 및 이로부터 제조되는 폴리이미드 필름 | |
WO2020096259A1 (ko) | 치수 안정성이 향상된 초박막 폴리이미드 필름 및 이의 제조방법 | |
WO2017018753A1 (ko) | 가요성 기판의 제조방법 | |
WO2019160218A1 (ko) | 저장 안정성이 향상된 폴리아믹산 조성물, 이를 이용한 폴리이미드 필름의 제조방법 및 이로 제조된 폴리이미드 필름 | |
WO2020111399A1 (ko) | 입경이 상이한 2 이상의 필러를 포함하는 폴리이미드 필름 및 이를 포함하는 전자장치 | |
WO2020138645A1 (ko) | 폴리아믹산 조성물, 및 이를 이용한 투명 폴리이미드 필름 | |
WO2016108631A1 (ko) | 폴리아마이드-이미드 전구체, 폴리아마이드-이미드 필름 및 이를 포함하는 표시소자 | |
CN104952780B (zh) | 柔性元件的制造方法、柔性元件及柔性元件制造装置 | |
WO2019143000A1 (ko) | 2 종 이상의 필러를 포함하는 고열전도성 폴리이미드 필름 | |
WO2018143588A1 (ko) | 가요성 기판 제조용 적층체 및 이를 이용한 가요성 기판의 제조방법 | |
WO2020040527A1 (ko) | 결정성 폴리이미드 수지 및 열전도성 필러를 포함하는 폴리이미드 필름 및 이의 제조방법 | |
WO2016200122A1 (ko) | 금속배선층이 형성된 적층체 및 이를 제조하는 방법 | |
WO2014133297A1 (ko) | 유리섬유직물이 함침된 무색투명 폴리이미드 필름의 제조 및 표면 평탄화 방법 | |
WO2020055182A1 (ko) | 플렉서블 디스플레이 제조용 적층체 및 이를 이용한 플렉서블 디스플레이 제조 방법 | |
WO2016108675A1 (ko) | 폴리아마이드-이미드 전구체, 폴리아마이드-이미드 필름 및 이를 포함하는 표시소자 | |
WO2020075908A1 (ko) | 접착력이 우수한 폴리이미드 수지를 제조하기 위한 폴리아믹산 조성물 및 이로부터 제조된 폴리이미드 수지 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16830786 Country of ref document: EP Kind code of ref document: A1 |
|
REEP | Request for entry into the european phase |
Ref document number: 2016830786 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2016830786 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15527261 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 2017530032 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |