WO2016207930A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- WO2016207930A1 WO2016207930A1 PCT/JP2015/003172 JP2015003172W WO2016207930A1 WO 2016207930 A1 WO2016207930 A1 WO 2016207930A1 JP 2015003172 W JP2015003172 W JP 2015003172W WO 2016207930 A1 WO2016207930 A1 WO 2016207930A1
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Definitions
- the present invention relates to a semiconductor device, for example, a semiconductor device having a fin-type FET structure.
- MOSFET Metal-Oxide-Semiconductor-Field-Effect-Transistor
- the source region, the drain region, and the channel region are arranged in a plane on the substrate.
- Patent Document 1 discloses a semiconductor device having a planar FET structure.
- a plurality of p-channel field effect transistors (PMOS) and n-channel field effect transistors (NMOS) are formed in an n-type well region and a p-type well region on a semiconductor substrate, respectively. .
- PMOS and NMOS each have a gate electrode formed on a semiconductor substrate via a gate insulating film.
- the channel is controlled from above by the gate electrode on the semiconductor substrate.
- the plurality of MOSFETs are connected by a first layer wiring above the gate electrode in order to form a desired circuit.
- a power supply diffusion layer called “tap” is formed on the semiconductor substrate so as to extend in one direction.
- the tap includes an n-well tap for supplying the power supply potential VDD to the n-type well region where the PMOS is formed, and a p-well tap for supplying the power supply potential VSS to the p-type well region where the NMOS is formed.
- the n-well tap is connected to one PMOS source region via the first layer wiring
- the p-well tap is connected to one NMOS source region via the first layer wiring.
- the gate electrode does not extend to the tap formation region. For this reason, when connecting a semiconductor element so that it may straddle a tap, it is necessary to use wiring of a layer higher than a gate electrode. Thus, when the upper layer wiring of the gate electrode is used for the connection of the semiconductor element, there are problems that the number of usable wiring tracks is reduced, the wiring is congested, and the area is increased.
- a semiconductor device is provided on a first well of a semiconductor substrate, provided with a first fin of the same conductivity type as the first well, a second well, the second well, It has the 2nd fin of a different conductivity type, and the 1st electrode connected to the 1st and 2nd fin.
- FIG. 1 is a plan view showing a configuration of a semiconductor device according to a first embodiment.
- 1 is a circuit diagram of a semiconductor device according to a first embodiment. It is a perspective view explaining the relationship between the fin of FIG. 1, an electrode, and a wiring layer.
- FIG. 4 is a sectional view taken along line IV-IV in FIG. 1.
- FIG. 5 is a VV cross-sectional view of FIG. 1.
- FIG. 6 is a plan view showing a configuration of a semiconductor device according to a second embodiment.
- FIG. 6 is a circuit diagram of a semiconductor device according to a second embodiment.
- FIG. 7 is a sectional view taken along line VIII-VIII in FIG. 6.
- FIG. 6 is a plan view illustrating a configuration of a semiconductor device according to a third embodiment.
- FIG. 6 is a circuit diagram of a semiconductor device according to a third embodiment.
- FIG. 10 is a sectional view taken along line XI-XI in FIG. 9.
- FIG. 6 is a plan view showing a configuration of a semiconductor device according to a fourth embodiment.
- FIG. 6 is a circuit diagram of a semiconductor device according to a fourth embodiment.
- FIG. 13 is a cross-sectional view taken along the line XVI-XVI in FIG. 12.
- FIG. 13 is a sectional view taken along the line XV-XV in FIG. 12.
- FIG. 10 is a plan view showing a configuration of a semiconductor device according to a fifth embodiment.
- FIG. 10 is a circuit diagram of a semiconductor device according to a fifth embodiment. It is XVIII-XVIII sectional drawing of FIG.
- FIG. 10 is a plan view showing a configuration of a semiconductor device according to a sixth embodiment.
- FIG. 10 is a circuit diagram of a semiconductor device according to a sixth embodiment.
- FIG. 20 is a cross-sectional view taken along XXI-XXI in FIG. 19.
- FIG. 10 is a plan view showing a configuration of a semiconductor device according to a seventh embodiment.
- FIG. 23 is a view seen from the XXIII-XXIII cutting line of FIG. 22 in the direction of the arrow.
- FIG. 23 is a view seen from the XXIV-XXIV cutting line of FIG. 22 in the direction of the arrow.
- FIG. 5 is a cross-sectional view taken along line VV when the NM first electrode and the NM second electrode in FIG.
- FIG. 27 is a sectional view taken along line XXVI-XXVI in FIG. 26.
- MOSFET Metal Oxide Semiconductor Semiconductor Field Effect Transistor
- PMOS p-channel MOSFET
- NMOS n-channel MOSFET
- TAP tap
- the semiconductor device may have a configuration in which conductivity types (p-type or n-type) such as a semiconductor substrate, a semiconductor layer, and a diffusion layer (diffusion region) are inverted. Therefore, when one of the n-type and p-type conductivity is the first conductivity type and the other conductivity type is the second conductivity type, the first conductivity type is p-type and the second conductivity type is n-type. Alternatively, the first conductivity type may be n-type and the second conductivity type may be p-type.
- FIGS. 26 is a plan view showing a configuration of a semiconductor device according to a comparative example
- FIG. 27 is a sectional view taken along line XXVI-XXVI in FIG.
- the comparative example shown in FIGS. 26 and 27 is a semiconductor device having a planar FET structure.
- illustration of the gate insulating film and the like is omitted.
- a p-type well region 101 and an n-type well region 102 are formed on a semiconductor substrate.
- An element isolation film 103 is formed on the semiconductor substrate.
- the element isolation film 103 defines an active region where a semiconductor element is formed.
- NMOS regions 110 are formed in the p-type well region 101.
- NMOS n-channel field effect transistor
- a plurality of NMOSs are formed in each NMOS region 110 .
- the NMOS is controlled by a gate electrode 111 formed on the NMOS region 110 via a gate insulating film.
- a PW (p-type well) TAP region 120 that supplies a power supply potential VSS to the p-type well region 101 is formed between the two NMOS regions 110.
- the PWTAP region 120 is formed between the two NMOS regions 110 so as to extend in one direction.
- two p-channel field effect transistor (PMOS) regions 130 are formed in the n-type well region 102.
- PMOS p-channel field effect transistor
- a plurality of PMOSs are formed in each PMOS region 130.
- the PMOS is controlled by a gate electrode 131 formed on the PMOS region 130 via a gate insulating film.
- NW (n-type well) TAP region 120 for supplying the power supply potential VDD to the n-type well region 102 is formed.
- the NWTAP region 140 is formed between the two PMOS regions 130 so as to extend in one direction.
- the NMOS source region and drain region are each composed of a low concentration n-type semiconductor region (not shown) and a high concentration n-type semiconductor region N + formed in the n-type well region 101.
- a high-concentration p-type semiconductor region P + formed in the p-type well region 101 is formed on the surface of the PWTAP region 120.
- the source and drain regions of the PMOS are each composed of a low concentration n-type semiconductor region (not shown) and a high concentration n-type semiconductor region P + formed in the p-type well region 102.
- NWTAP region 140 On the surface of the NWTAP region 140, a high concentration n-type semiconductor region N + formed in the n-type well region 102 is formed.
- An interlayer insulating film (not shown) is provided on these regions. Contact holes are formed in the interlayer insulating film, and plugs 104 are formed in the contact holes.
- Two NMOS drains arranged opposite to each other via the PWTAP region 120 are connected via an upper wiring layer 105.
- the drains of the two PMOSs arranged opposite to each other via the NWTAP region 140 are connected via the upper wiring layer 105.
- the upper wiring layer 105 is composed of a first metal layer M1 formed on the upper layer of the gate electrode.
- the upper wiring layer 105 extends in a direction substantially orthogonal to the direction in which the PWTAP region 120 and the NWTAP region 140 extend.
- the upper wiring layer 105 is formed so as to straddle the PWTAP region 120 and the NWTAP region 140, respectively.
- the upper wiring layer than the gate electrode is used to connect the PMOS and NMOS, so that the number of usable wiring tracks is reduced, the wiring is congested, and the area is increased. There is a problem of inviting.
- the fin-type FET has a structure in which a fin-type channel region formed on a semiconductor substrate is sandwiched between U-shaped gate electrodes, and the channel is controlled from three directions. For this reason, it is possible to effectively suppress the leakage current which has been a problem in the conventional planar type FET.
- planar type FET has been changed to a fin type FET, and the layout rules up to that point have been greatly changed.
- One of them is that an electrode used as a gate of a transistor is formed on a diffusion layer for a substrate contact (tap).
- the present inventors have studied to reduce the congestion of the wiring layer, which is a problem in the planar FET, by using the electrode formed on the tap diffusion layer as the wiring.
- the semiconductor device according to the embodiment includes a transistor having a fin-type FET structure, and can be applied to a microcomputer or a System-on-a-chip (SoC) product.
- SoC System-on-a-chip
- FIG. 1 is a plan view showing the configuration of the semiconductor device 1
- FIG. 2 is a circuit diagram of the semiconductor device 1.
- FIG. 3 is a perspective view for explaining the relationship between the fins of FIG. 1 and electrodes and wiring layers.
- 4 is a sectional view taken along the line IV-IV in FIG. 1
- FIG. 5 is a sectional view taken along the line VV in FIG.
- the semiconductor device 1 includes two NMOS regions 10 and a PWTAP region 20.
- the two NMOS regions 10 are formed to face each other with the PWTAP region 20 in between. 4 and 5, a p-type well region 15 is formed in the NMOS region 10 in the semiconductor substrate.
- a p-type well region 15 is formed in the PWTAP region 20 in the semiconductor substrate.
- the well regions formed in the NMOS region 10 and the PWTAP region 20 have the same conductivity type.
- An element isolation film 16 is formed on the semiconductor substrate.
- the element isolation film 16 has a function of partitioning an active region where a semiconductor element is formed and preventing interference between elements formed on the semiconductor substrate.
- the element isolation film 16 is formed by, for example, an STI (Shallow Trench Isolation) method in which a groove is formed in a semiconductor substrate and an insulating film such as a silicon oxide film is embedded in the groove.
- STI Shallow Trench Isolation
- the n-type fin 11 is formed on the p-type well region 15.
- the p-type well region 15 and the n-type fin 11 have different conductivity types.
- the n-type fin 11 has a thin strip shape (cuboid shape). In the example shown in FIG. 1, three n-type fins 11 are arranged at a predetermined interval. The direction in which the n-type fin 11 extends is defined as the x direction.
- the gate insulating film 17 is formed between the n-type fin 11 and the three electrodes 12a to 12c.
- the gate insulating film 17 is made of, for example, a silicon oxide film.
- the thickness of the gate insulating film 17 is 2 nm or less, preferably about 1 nm.
- the element isolation film 16 is thicker than the gate insulating film 17.
- the NM second electrode 12b is formed so as to straddle the surface of the n-type fin 11 with the gate insulating film 17 interposed therebetween.
- a region covered with the NM second electrode 12b of the n-type fin 11 functions as a channel region. That is, the NMOS has a tri-gate structure in which both side surfaces and the upper surface of the n-type fin 11 are channel regions.
- the NM second electrode 12b serves as an NMOS gate electrode.
- a region of the n-type fin 11 that is not covered with the NM second electrode 12b is a source region or a drain region.
- the three electrodes 12a to 12c are formed of a conductive film, for example, a polycrystalline silicon film.
- An n-type conductive impurity such as phosphorus or arsenic may be introduced into the NM second electrode 12b serving as the NMOS gate electrode on the p-type well region 15.
- a gate metal material such as tungsten can be used as the material of the electrodes 12a to 12c.
- the NM first electrode 12 a and the NM third electrode 12 c are formed so as to cover the end portion of the n-type fin 11. That is, the end portion of the n-type fin 11 is disposed in the NM first electrode 12a and the NM third electrode 12c. That is, the NM first electrode 12a and the NM third electrode 12c are in contact with the end of the side surface in the longitudinal direction, the end of the upper surface, and the side surface in the short direction of the n-type fin 11.
- the arrangement of the NM first electrode 12a and the NM third electrode 12c is not limited to this.
- the NM first electrode 12a and the NM third electrode 12c may be disposed so as to contact only the side surface of the n-type fin 11 in the short direction.
- the NM first electrode 12a and the NM second electrode 12b are formed so as to be in contact with only the end of the side surface in the longitudinal direction and the end of the top surface of the n-type fin 11 and not in contact with the side surface in the short direction. Also good. That is, the end of the n-type fin 11 only needs to be within a range indicated by a broken line in FIG.
- FIG. 25 shows the case where the NM first electrode and the NM second electrode in FIG.
- An NM first wiring layer 13a is formed between the NM first electrode 12a and the NM second electrode 12b.
- the NM first wiring layer 13 a is connected to the NM first electrode 12 a by the NM connection wiring layer 14.
- An NM second wiring layer 13b is formed between the NM second electrode 12b and the NM third electrode 12c. Note that the NM first wiring layer 13a, the NM second wiring layer 13b, and the NM connection wiring layer 14 are newly added to the fin type FET, unlike the upper wiring layer 105 of the upper layer of the gate electrode described in the comparative example. It consists of a metal layer M0.
- the metal layer M0 is a layer between the gate and the metal layer M1 in the comparative example.
- the NM first wiring layer 13a and the NM second wiring layer 13b are wiring layers extending in the vertical direction on the n-type fin 11, and are referred to as metal layers M0_V.
- the NM connection wiring layer 14 is a wiring extending in the horizontal direction in parallel with the n-type fin 11 and is referred to as a metal layer M0_H. Therefore, although not shown in the embodiment, the first-layer metal film M1 connected via the plug is disposed above the metal layer M0.
- the metal layer M0 is formed, for example, by embedding a barrier metal film and a conductive film mainly composed of copper in a groove formed in an interlayer insulating film (not shown).
- the barrier metal film is made of tantalum, tantalum nitride, or a laminated film thereof.
- the same configuration can be applied to the first wiring layer (metal layer M1) after the first metal layer M0. It is also possible to integrally form the wiring layer and the plug above the metal layer M0.
- the NM first wiring layer 13 a is formed so as to straddle the surface of the n-type fin 11.
- the NM second wiring layer 13 b is also formed so as to straddle the surface of the n-type fin 11.
- p-type fins 21 are formed on the p-type well region 15 in the PWTAP region 20.
- the p-type well region 15 and the p-type fin 21 have the same conductivity type.
- the p-type fin 21 has a thin strip shape (cuboid shape).
- two p-type fins 21 are arranged at a predetermined interval.
- the p-type fin 21 extends in the x direction, which is the same as the direction in which the n-type fin 11 extends.
- the gate insulating film 17 is formed so as to cover the p-type fin 21. Therefore, the gate insulating film 17 is formed between the p-type fin 21 and these three electrodes.
- the PWTAP first electrode 22 a and the PWTAP second electrode 22 b extend in the y direction orthogonal to the x direction and intersect the two p-type fins 21.
- the PWTAP first electrode 22a and the PWTAP second electrode 22b can also be formed of the same material as the three electrodes 12a to 12c.
- the gate insulating film 17 is formed not only between the electrodes and the fins but also on the element isolation film between the fins. In other words, the gate insulating film 17 is formed on the entire lower surface of each of the three electrodes (the NM first electrode 12a, the PWTAP first electrode 22a, and the PWTAP second electrode 22b). The same applies to other embodiments.
- the PWTAP first electrode 22 a and the PWTAP second electrode 22 b are formed so as to cover the end of the p-type fin 21.
- the end of the p-type fin 21 extends from the inner end of the PWTAP first electrode 22 a and the PWTAP second electrode 22 b to the outer end. It can arrange
- the NM first electrode 12 a extends from one NMOS region 10 through the PWTAP region 20 to the other NMOS region 10.
- the NM first electrode 12 a is also connected to the NM first wiring layer 13 a of the other NMOS region 10 via the NM connection wiring layer 14. Therefore, two NMOS drains formed on both sides of the PWTAP region 20 are connected to each other, and the circuit configuration shown in FIG. 2 is obtained.
- the electrode (NM first electrode 12a) formed in the same process as the electrode (NM second electrode 12b) used as the NMOS gate on the PWTAP region 20 is formed on both sides of the PWTAP region 20. Used as wiring for transmitting signals. That is, the NM first electrode 12a on the PWTAP region 20 is a wiring that connects the upper and lower NMOSs of the PWTAP region 20, and is a signal node that is not a power source. The NM first electrode 12 a is connected to the semiconductor substrate by a p-type fin 21 in the PWTAP region 20.
- the PWTAP first wiring layer 23a is disposed between the NM first electrode 12a and the PWTAP first electrode 22a. Further, the PWTAP second electrode 22b is disposed between the NM first electrode 12a and the PWTAP second electrode 22b.
- the PWTAP first wiring layer 23a and the PWTAP second wiring layer 23b are each connected to the power supply potential VSS.
- the power supply potential VSS can be a reference potential (ground potential) GND.
- the p-type fin 21 supplies the power supply potential VSS to the p-type well region 15 and fixes the p-type well region 15 at a constant potential.
- the PWTAP first wiring layer 23a and the PWTAP second wiring layer 23b are the metal layer M0_V described above.
- the NM first electrode 12a on the PWTAP region 20 functions as a wiring for transmitting signals other than the power supply without using the upper wiring layer as in the comparative example. Can do. For this reason, it is possible to prevent congestion of wiring and reduce the area of the semiconductor device.
- FIG. A semiconductor device 1A according to the second embodiment will be described with reference to FIGS. 6 is a plan view showing the configuration of the semiconductor device 1A, and FIG. 7 is a circuit diagram of the semiconductor device 1A. 8 is a sectional view taken along line VIII-VIII in FIG.
- the semiconductor device 1 ⁇ / b> A has one NMOS region 10 and a PWTAP region 20.
- a p-type well region 15 is formed on the semiconductor substrate.
- a p-type well region 15 is formed on the semiconductor substrate.
- the well regions formed in the NMOS region 10 and the PWTAP region 20 have the same conductivity type.
- An element isolation film 16 for partitioning the active region is formed on the semiconductor substrate.
- NMOS region 10 In the NMOS region 10, three n-type fins 11 are formed on the p-type well region 15 so as to extend in the x direction.
- PWTAP region 20 In the PWTAP region 20, two p-type fins 21 are formed on the p-type well region 15 so as to extend in the x direction.
- the length of the p-type fin 21 is approximately half of the length of the n-type fin 11.
- a gate insulating film 17 is formed on the n-type fin 11 and the p-type fin 21 so as to cover them.
- NM first electrode 12a On the n-type fin 11, three electrodes (the NM first electrode 12a, the NM second electrode 12b, and the NM third electrode 12c) are formed. These three electrodes extend in the y direction orthogonal to the x direction and are formed to straddle the three n-type fins 11.
- the NM second electrode 12b serves as an NMOS gate electrode.
- the NM first electrode 12 a and the NM third electrode 12 c are formed so as to cover the end portion of the n-type fin 11.
- the NM second electrode 12b serving as the gate electrode extends to the PWTAP region 20.
- the NM second electrode 12 b is disposed so as to cover one end of the p-type fin 21.
- a PWTAP electrode 22 is formed on the other end of the p-type fin 21.
- the PWTAP electrode 22 is formed so as to cover the other end of the p-type fin 21.
- the end of the n-type fin 11 may be between the two side surfaces extending in the longitudinal direction of the NM first electrode 12a and the NM third electrode 12c.
- the end of the p-type fin 21 may be between two side surfaces extending in the longitudinal direction of the PWTAP electrode 22 and between two side surfaces extending in the longitudinal direction of the NM second electrode 12b.
- An NM first wiring layer 13a is formed between the NM first electrode 12a and the NM second electrode 12b.
- An NM second wiring layer 13b is formed between the NM second electrode 12b and the NM third electrode 12c.
- a PWTAP wiring layer 23 is formed between the PWTAP electrode 22 and the NM second electrode 12b. The PWTAP wiring layer 23 is connected to the power supply potential VSS.
- a gate contact 24 is connected to the NM second electrode 12b in the PWTAP region 20.
- the gate contact 24 is formed in the PWTAP region 20 at a position farther from the NMOS region 10 than the PWTAP wiring layer 23 that supplies the power supply potential VSS to the p-type well region 15.
- the gate contact 24 is made of the metal layer M0_V described above.
- the semiconductor device according to the second embodiment has a circuit configuration shown in FIG.
- the metal layer for gate contact can be separated from the source and drain. For this reason, it is possible to avoid crowding of the wiring layers and to reduce the area of the semiconductor device.
- FIG. 9 is a plan view showing the configuration of the semiconductor device 1B
- FIG. 10 is a circuit diagram of the semiconductor device 1B
- 11 is a cross-sectional view taken along line XI-XI in FIG.
- the semiconductor device 1B has an NMOS region 10, a PWTAP region 20, and a PMOS region 30.
- a p-type well region 15 is formed on the semiconductor substrate.
- a p-type well region 15 is formed on the semiconductor substrate.
- an n-type well region 35 is formed on the semiconductor substrate.
- the well regions formed in the NMOS region 10 and the PWTAP region 20 have the same conductivity type, and are different from the conductivity type of the well region formed in the PMOS region 30.
- An element isolation film 16 for partitioning the active region is formed on the semiconductor substrate.
- n-type fins 11 are formed on the p-type well region 15 so as to extend in the x direction.
- PWTAP region 20 two p-type fins 21 are formed on the p-type well region 15 so as to extend in the x direction.
- PMOS region 30 three p-type fins 31 are formed on the n-type well region 35 so as to extend in the x direction.
- the lengths of the n-type fin 11 and the p-type fin 31 are substantially equal.
- the length of the p-type fin 21 is substantially half of the length of the n-type fin 11 and the p-type fin 31.
- a gate insulating film 17 is formed on the n-type fin 11, the p-type fin 21, and the p-type fin 31 so as to cover them.
- NM first electrode 12a On the n-type fin 11, three electrodes (the NM first electrode 12a, the NM second electrode 12b, and the NM third electrode 12c) are formed. These three electrodes extend in the y direction orthogonal to the x direction and are formed to straddle the three n-type fins 11.
- the NM second electrode 12b serves as an NMOS gate electrode.
- the NM first electrode 12 a and the NM third electrode 12 c are formed so as to cover the end portion of the n-type fin 11.
- all three electrodes extend from the NMOS region 10 to the PMOS region 30 beyond the PWTAP region 20. is doing.
- the NM first electrode 12 a is disposed so as to cover the other end of the p-type fin 21 and one end of the p-type fin 31.
- the NM second electrode 12 b is arranged so as to cover one end of the p-type fin 21 and straddle the p-type fin 31.
- the NM second electrode 12b is an NMOS gate electrode and a PMOS gate electrode.
- the NM third electrode 12 c is disposed so as to cover the other end of the p-type fin 31. Note that the end of the n-type fin 11 and the end of the p-type fin 31 need only be between two side surfaces extending in the longitudinal direction of the NM first electrode 12a and the NM third electrode 12c. The end of the p-type fin 21 may be between two side surfaces extending in the longitudinal direction of the NM second electrode 12b and the NM third electrode 12c.
- an NM first wiring layer 13a is formed between the NM first electrode 12a and the NM second electrode 12b.
- the NM first electrode 12 a is connected to the NM first wiring layer 13 a via the NM connection wiring layer 14.
- an NM second wiring layer 13b is formed between the NM second electrode 12b and the NM third electrode 12c.
- a PWTAP wiring layer 23 is formed between the NM first electrode 12a and the NM second electrode 12b.
- the PWTAP wiring layer 23 is connected to the power supply potential VSS.
- a PM first wiring layer 33a is formed between the NM first electrode 12a and the NM second electrode 12b.
- the NM first electrode 12 a is connected to the PM first wiring layer 33 a through the PM connection wiring layer 34.
- a PM second wiring layer 33b is formed between the NM second electrode 12b and the NM third electrode 12c.
- a gate contact 24 is connected to the NM second electrode 12b.
- the gate contact 24 is formed on the boundary between the PWTAP region 20 and the PMOS region 30. Therefore, the semiconductor device 1B has a circuit configuration shown in FIG. 10 in which NMOS and PMOS gate electrodes and drains formed on both sides of the PWTAP region 20 are connected to each other.
- the NM first electrode 12a on the PWTAP region 20 can function as a wiring for transmitting signals other than the power supply.
- the metal layer for gate contact can be separated from the source and drain. As a result, it is possible to prevent wiring congestion and reduce the area of the semiconductor device.
- the diffusion layer (p-type fin 21) is cut under the NM first electrode 12a and the NM second electrode 12b. That is, the p-type fin 21 is disposed in a range from the NM first electrode 12a to the NM second electrode 12b. For this reason, as compared with the fourth embodiment to be described next, there is no PWTAP wiring layer 23 connected to the power supply potential VSS on the left side of the NM second electrode 12b, and the parasitic capacitance therebetween is further reduced. This effect is the same in the PWTAP region 20 of FIG.
- FIG. 12 is a plan view showing the configuration of the semiconductor device 1C
- FIG. 13 is a circuit diagram of the semiconductor device 1C
- 14 is a sectional view taken along the line XIV-XIV in FIG. 12
- FIG. 15 is a sectional view taken along the line XV-XV in FIG.
- a semiconductor device 1C according to the fourth embodiment is a modification of the semiconductor device 1B according to the third embodiment.
- the semiconductor device 1C has an NM fourth electrode 12d in addition to the three electrodes 12a to 12c of the semiconductor device 1B.
- the NM fourth electrode 12d is provided on the opposite side of the NM first electrode 12a from the NM second electrode 12b in the x direction.
- the four electrodes 12a to 12d are arranged to be aligned in the x direction at a predetermined interval. All of the four electrodes 12 a to 12 d extend from the NMOS region 10 to the PMOS region 30 beyond the PWTAP region 20.
- the NM first electrode 12a connects an NMOS drain and a PMOS drain.
- the NM second electrode 12b serves as a gate electrode for NMOS and PMOS. Therefore, the circuit configuration of the semiconductor device 1C is as shown in FIG.
- the NM first electrode 12a that connects the NMOS and PMOS drains, and the p-type fin 21 under the NM second electrode 12b that serves as the gate electrode of the NMOS and PMOS are cut off. Absent. That is, the p-type fin 21 extends from the NM third electrode 12c to the NM fourth electrode 12d through the NM second electrode 12b and the NM first electrode 12a.
- a PWTAP wiring layer 23 is provided between the NM first electrode 12a and the NM fourth electrode 12d.
- the PWTAP wiring layer 23 is connected to the power supply potential VSS.
- a gate insulating film 17 is formed on the n-type fin 11, the p-type fin 21, and the p-type fin 31 so as to cover them.
- FIG. A semiconductor device 1D according to the fifth embodiment will be described with reference to FIGS. 16 is a plan view showing the configuration of the semiconductor device 1D, and FIG. 17 is a circuit diagram of the semiconductor device 1D. 18 is a cross-sectional view taken along the line XVIII-XVIII in FIG.
- NMOS region 10 In the NMOS region 10, three n-type fins 11 are formed on the p-type well region 15 so as to extend in the x direction.
- PWTAP region 20 In the PWTAP region 20, two p-type fins 21 are formed on the p-type well region 15 so as to extend in the x direction.
- PMOS region 30 In the PMOS region 30, three p-type fins 31 are formed on the n-type well region 35 so as to extend in the x direction. In the example shown in FIG. 16, the lengths of the n-type fin 11, the p-type fin 21, and the p-type fin 31 are equal.
- a gate insulating film 17 is formed on the n-type fin 11, the p-type fin 21, and the p-type fin 31 so as to cover them.
- NM first electrode 12a On the n-type fin 11, three electrodes (the NM first electrode 12a, the NM second electrode 12b, and the NM third electrode 12c) are formed. These three electrodes extend in the y direction orthogonal to the x direction and are formed to straddle the three n-type fins 11.
- the NM second electrode 12b serves as an NMOS gate electrode.
- the NM first electrode 12 a and the NM third electrode 12 c are formed so as to cover the end portion of the n-type fin 11.
- the NM first electrode 12 a and the NM third electrode 12 c extend from the NMOS region 10 to the PMOS region 30 beyond the PWTAP region 20.
- the NM first electrode 12 a covers one end of the p-type fin 21 and the p-type fin 31.
- the NM third electrode 12 c covers the other ends of the p-type fin 21 and the p-type fin 31.
- the positions of the end portions of the n-type fin 11, the p-type fin 21, and the p-type fin 31 are two extending in the longitudinal direction of the NM first electrode 12a or the NM third electrode 12c. It only needs to be between the sides.
- an NM first wiring layer 13a is formed between the NM first electrode 12a and the NM second electrode 12b.
- the NM first electrode 12 a is connected to the NM first wiring layer 13 a via the NM connection wiring layer 14.
- an NM second wiring layer 13b is formed between the NM second electrode 12b and the NM third electrode 12c.
- a PWTAP electrode 22 is formed so as to straddle the substantially central portion of the p-type fin 21.
- a gate insulating film 17 is formed between the p-type fin 21 and the PWTAP electrode 22.
- a PWTAP first wiring layer 23a and a PWTAP second wiring layer 23b are formed between the PWTAP electrode 22 and the NM first electrode 12a and the NM third electrode 12c, respectively.
- the PWTAP first wiring layer 23a, the PWTAP second wiring layer 23b, and the PWTAP electrode 22 are connected by a PWTAP connection wiring layer 25.
- the PWTAP connection wiring layer 25 is connected to the power supply potential VSS.
- the PM electrode 32 is formed so as to straddle the substantially central portion of the p-type fin 31.
- the gate insulating film 17 is formed between the p-type fin 31 and the PM electrode 32.
- a PM first wiring layer 33a and a PM second wiring layer 33b are formed between the PM electrode 32 and the NM first electrode 12a and the NM third electrode 12c, respectively.
- the NM first electrode 12 a is connected to the PM first wiring layer 33 a through the PM connection wiring layer 34.
- the NM first electrode 12a connects an NMOS drain and a PMOS drain. Therefore, the semiconductor device 1D has a circuit configuration shown in FIG.
- the PWTAP electrode 22 on the PWTAP region 20 is separated from the PMOS and NMOS gate electrodes.
- the PWTAP electrode 22 is disposed only in the PWTAP region 20 and is connected to a power source. Even in such a configuration, it is possible to avoid the concentration of the lead-in metal for the drain contact, and the area of the semiconductor device can be reduced.
- FIG. 19 is a plan view showing the configuration of the semiconductor device 1E
- FIG. 20 is a circuit diagram of the semiconductor device 1E
- 21 is a cross-sectional view taken along XXI-XXI in FIG.
- the semiconductor device 1E of the sixth embodiment is a modification of the semiconductor device 1D of the fifth embodiment, and the description of the same configuration as that of the fifth embodiment is omitted.
- the NM second wiring layer 13b in the NMOS region 10 extends to the PWTAP region 20. That is, the source of the NMOS is connected to the power supply potential VSS by the metal layer M0_V.
- the NMOS drain and the PMOS drain are connected by the NM first electrode 12a. Therefore, the semiconductor device 1E has a circuit configuration shown in FIG. In the cross-sectional view shown in FIG. 21, the element isolation film 16 and the gate insulating film 17 are not shown, but the gate insulating film 17 includes the n-type fin 11 and the p-type as in the above-described embodiment.
- the fins 21 are stacked on the p-type fins 31.
- the metal layers M0_V in each region may be connected to each other as long as the metal layers M0_V are not connected to different power sources. Similarly in the first to fifth embodiments, the metal layers M0_V in each region may be connected to each other.
- FIG. 22 is a plan view showing the configuration of the semiconductor device 1F.
- 23 is a view as seen from the XXIII-XXIII cut line in FIG. 22 in the direction of the arrow, and
- FIG. 24 is a view as seen from the XXIV-XXIV cut line in FIG.
- the semiconductor device 1F has a PWTAP region 20 and an NWTAP region 40, and does not include a transistor.
- the PWTAP area 20 and the NWTAP area 40 are arranged to face each other.
- a p-type well region 15 is formed on the semiconductor substrate.
- an n-type well region 42 is formed on the semiconductor substrate.
- the well regions formed in the PWTAP region 20 and the NWTAP region 40 have different conductivity types.
- an element isolation film 16 and an element isolation film 45 that partition the active region are formed.
- a p-type fin 21 is provided on the p-type well region 15.
- three p-type fins 21 extending in the x direction are formed to be arranged at a predetermined interval in the y direction.
- the p-type fin 21 and the p-type well region 15 have the same conductivity type.
- n-type fins 41 are provided on the n-type well region 42.
- three n-type fins 41 extending in the x direction are formed so as to be arranged at a predetermined interval in the y direction.
- the n-type fin 41 and the n-type well region 42 have the same conductivity type.
- PWTAP electrodes 22 are formed on the p-type fin 21.
- the PWTAP electrode 22 extends in the y direction orthogonal to the x direction and intersects with the three p-type fins 21. As described with reference to FIG. 3, the PWTAP electrode 22 is formed so as to straddle the p-type fin 21.
- the gate insulating film 17 is formed on the entire lower surface of the PWTAP electrode 22 so as to cover the p-type fin 21.
- the six PWTAP electrodes 22 extend from the PWTAP region 20 to the NWTAP region 40. Each PWTAP electrode 22 is disposed so as to straddle the n-type fin 41. Although not shown in FIG. 24, the gate insulating film 17 is formed on the entire lower surface of the PWTAP electrode 22 so as to cover the n-type fin 41. Therefore, the gate insulating film 17 is formed between the p-type fin 21 and the n-type fin 41 and the PWTAP electrode 22.
- the PWTAP electrodes 22 arranged at both ends are formed so as to cover the end of the p-type fin 21 and the end of the n-type fin 41. 4 and 25, the end portions of the p-type fin 21 and the n-type fin 41 are within the range from the inner end portion to the outer end portion of the PWTAP first electrode 22a and the PWTAP second electrode 22b. Can be arranged.
- a PWTAP wiring layer 23 is formed between the PWTAP electrodes 22.
- the PWTAP wiring layer 23 is made of the metal layer M0_V described above.
- a PWTAP connection wiring layer 25 is formed on the PWTAP electrode 22 disposed first, third, and fifth from the right side.
- the PWTAP connection wiring layer 25 is connected to the power supply potential VSS.
- the PWTAP connection wiring layer 25 is made of the above-described metal layer M0_H.
- the p-type fin 21 supplies the power supply potential VSS to the p-type well region 15 and fixes the p-type well region 15 at a constant potential.
- an NWTAP wiring layer 43 is formed between the PWTAP electrodes 22.
- the NWTAP wiring layer 43 is also made of the metal layer M0_V described above.
- the NWTAP connection wiring layer 44 is formed on the PWTAP electrode 22 disposed second, fourth, and sixth from the right side.
- the NWTAP connection wiring layer 44 is connected to the power supply potential VDD.
- the n-type well region 42 supplies the power supply potential VDD to the n-type well region 42 and fixes the n-type well region 42 at a constant potential.
- the NWTAP connection wiring layer 44 is also made of the metal layer M0_H described above.
- the PWTAP connection wiring layer 25 and the NWTAP connection wiring layer 44 respectively connected to the power supply potentials VSS and VDD are alternately arranged on the PWTAP electrode 22.
- VDD / VSS varactor elements can be formed with the same TAP area. For this reason, the decoupling capacity can be increased and the stability of the power supply can be increased.
- Appendix 2 The semiconductor device according to appendix 1, wherein the first well and the second well have the same conductivity type.
- Appendix 4 A third fin on the second well; A second electrode connected to the second and third fins;
- Appendix 6 The semiconductor device according to appendix 4, further comprising a third electrode connected to the second and third fins and provided between the first electrode and the second electrode in plan view.
- appendix 10 The semiconductor device according to appendix 8, further comprising a third electrode connected to the first and third fins and provided between the first electrode and the second electrode in plan view.
- Appendix 12 The semiconductor device according to appendix 10, wherein the third electrode is connected to a first potential.
- a semiconductor substrate A semiconductor substrate; A first well provided in the semiconductor substrate; A second well provided in the semiconductor substrate; A first fin-type transistor provided in the first well; Fins provided in the second well; Have The electrode of the first fin-type transistor is connected to the fin provided in the second well, The first well and the first fin-type transistor have different conductivity types, The semiconductor device, wherein the second well and the fin have the same conductivity type.
- a semiconductor substrate A semiconductor substrate; A first well provided in the semiconductor substrate; A second well provided in the semiconductor substrate; A first fin on the first well; A second fin on the second well; A first electrode connected to the first and second fins; Have The first well and the first fin have the same conductivity type; The second well and the second fin have the same conductivity type; The semiconductor device, wherein the first well and the second well are of different conductivity types.
- a semiconductor substrate A semiconductor substrate; A first conductivity type well provided on the semiconductor substrate; A first conductivity type first fin on the first conductivity type well; A first conductivity type second fin on the first conductivity type well; A second conductivity type third fin on the first conductivity type well; A first electrode connected to the first and second fins; And a second electrode connected to the first and third fins.
- a semiconductor substrate A semiconductor substrate; A first conductivity type well provided on the semiconductor substrate; A second conductivity type well provided on the semiconductor substrate; A first conductivity type first fin on the first conductivity type well; A first conductivity type second fin on the first conductivity type well; A first conductivity type third fin on the second conductivity type well; A first electrode connected to the first and second fins; And a second electrode connected to the first and third fins.
Abstract
Description
実施の形態1に係る半導体装置1について、図1~5を参照して説明する。図1は半導体装置1の構成を示す平面図であり、図2は半導体装置1の回路図である。図3は、図1のフィンと、電極及び配線層との関係を説明する斜視図である。図4は図1のIV-IV断面図であり、図5は図1のV-V断面図である。
実施の形態2に係る半導体装置1Aについて、図6~8を参照して説明する。図6は半導体装置1Aの構成を示す平面図であり、図7は半導体装置1Aの回路図である。図8は図6のVIII-VIII断面図である。
実施の形態3に係る半導体装置1Bについて、図9~11を参照して説明する。図9は半導体装置1Bの構成を示す平面図であり、図10は半導体装置1Bの回路図である。図11は図9のXI-XI断面図である。
実施の形態4に係る半導体装置1Cについて、図12~15を参照して説明する。図12は半導体装置1Cの構成を示す平面図であり、図13は半導体装置1Cの回路図である。図14は図12のXIV-XIV断面図であり、図15は図12のXV-XV断面図である。実施の形態4の半導体装置1Cは、実施の形態3の半導体装置1Bの変形例である。
実施の形態5に係る半導体装置1Dについて、図16~18を参照して説明する。図16は半導体装置1Dの構成を示す平面図であり、図17は半導体装置1Dの回路図である。図18は、図16のXVIII-XVIII断面図である。
実施の形態6に係る半導体装置1Eについて、図19~21を参照して説明する。図19は半導体装置1Eの構成を示す平面図であり、図20は半導体装置1Eの回路図である。図21は、図19のXXI-XXI断面図である。実施の形態6の半導体装置1Eは、実施の形態5の半導体装置1Dの変形例であり、実施の形態5と同様の構成については説明を省略する。
実施の形態7に係る半導体装置1Fについて、図22~24を参照して説明する。図22は半導体装置1Fの構成を示す平面図である。図23は図22のXXIII-XXIII切断線から矢印方向に向かって見た図であり、図24は図22のXXIV-XXIV切断線から矢印方向に向かって見た図である。
半導体基板と、
前記半導体基板に設けられた第1ウェルと、
前記半導体基板に設けられた第2ウェルと、
前記第1ウェル上の第1フィンと、
前記第2ウェル上の第2フィンと、
前記第1及び第2フィンに接続された第1電極と、
を有し、
前記第1ウェルと前記第1フィンは同じ導電型であり、前記第2ウェルと前記第2フィンは異なる導電型である、半導体装置。
前記第1ウェルと前記第2ウェルは同じ導電型である、付記1に記載の半導体装置。
前記第1ウェルと前記第2ウェルは異なる導電型である、付記1に記載の半導体装置。
前記第2ウェル上の第3フィンと、
前記第2及び第3フィンに接続された第2電極と、
をさらに有する、付記1に記載の半導体装置。
前記第2電極は前記第1フィンにも接続されている、付記4に記載の半導体装置。
前記第2及び第3フィンに接続され、平面視で、前記第1電極と前記第2電極の間に設けられた第3電極をさらに有する、付記4に記載の半導体装置。
前記第3電極は前記第1フィンにも接続されている、付記6に記載の半導体装置。
前記第1ウェル上の第3フィンと、
前記第1及び第3フィンに接続された第2電極と、
をさらに有する、付記1に記載の半導体装置。
前記第2電極は前記第2フィンにも接続されている、付記8に記載の半導体装置。
前記第1及び第3フィンに接続され、平面視で、前記第1電極と前記第2電極の間に設けられた第3電極をさらに有する、付記8に記載の半導体装置。
前記第3電極は前記第2フィンにも接続されている、付記10に記載の半導体装置。
前記第3電極は第1の電位に接続されている、付記10に記載の半導体装置。
半導体基板と、
前記半導体基板に設けられた第1ウェルと、
前記半導体基板に設けられた第2ウェルと、
前記第1ウェルに設けられた第1フィン型トランジスタと、
前記第2ウェルに設けられたフィンと、
を有し、
前記第1フィン型トランジスタの電極は前記第2ウェルに設けられた前記フィンに接続され、
前記第1ウェルと前記第1フィン型トランジスタは異なる導電型であり、
前記第2ウェルと前記フィンは同じ導電型である、半導体装置。
半導体基板と、
前記半導体基板に設けられた第1ウェルと、
前記半導体基板に設けられた第2ウェルと、
前記第1ウェル上の第1フィンと、
前記第2ウェル上の第2フィンと、
前記第1及び第2フィンに接続された第1電極と、
を有し、
前記第1ウェルと前記第1フィンは同じ導電型であり、
前記第2ウェルと前記第2フィンは同じ導電型であり、
前記第1ウェルと前記第2ウェルは異なる導電型である、半導体装置。
半導体基板と、
前記半導体基板に設けられた第1導電型ウェルと、
前記第1導電型ウェル上の第1導電型第1フィンと、
前記第1導電型ウェル上の第1導電型第2フィンと、
前記第1導電型ウェル上の第2導電型第3フィンと、
前記第1及び第2フィンに接続された第1電極と、
前記第1及び第3フィンに接続された第2電極と、を有する半導体装置。
半導体基板と、
前記半導体基板に設けられた第1導電型ウェルと、
前記半導体基板に設けられた第2導電型ウェルと、
前記第1導電型ウェル上の第1導電型第1フィンと、
前記第1導電型ウェル上の第1導電型第2フィンと、
前記第2導電型ウェル上の第1導電型第3フィンと、
前記第1及び第2フィンに接続された第1電極と、
前記第1及び第3フィンに接続された第2電極と、を有する半導体装置。
前記第1電極は前記第3フィンにも接続されている、付記4に記載の半導体装置。
前記第1電極は前記第3フィンにも接続されている、付記8に記載の半導体装置。
1A~1F 半導体装置
10 NMOS領域
11 n型フィン
12a NM第1電極
12b NM第2電極
12c NM第3電極
12d NM第4電極
13a NM第1配線層
13b NM第2配線層
14 NM接続配線層
15 p型ウェル領域
16 素子分離膜
17 ゲート絶縁膜
20 PWTAP領域
21 p型フィン
22 PWTAP電極
22a PWTAP第1電極
22b PWTAP第2電極
23 PWTAP配線層
23a PWTAP第1配線層
23b PWTAP第2配線層
24 ゲートコンタクト
25 PWTAP接続配線層
30 PMOS領域
31 p型フィン
32 PM電極
33a PM第1配線層
33b PM第2配線層
34 PM接続配線層
35 n型ウェル領域
40 NWTAP領域
41 n型フィン
42 n型ウェル領域
43 NWTAP配線層
44 NWTAP接続配線層
45 素子分離膜
Claims (14)
- 半導体基板と、
前記半導体基板に設けられた第1ウェルと、
前記半導体基板に設けられた第2ウェルと、
前記第1ウェル上の第1フィンと、
前記第2ウェル上の第2フィンと、
前記第1及び第2フィンに接続された第1電極と、
を有し、
前記第1ウェルと前記第1フィンは同じ導電型であり、前記第2ウェルと前記第2フィンは異なる導電型である、半導体装置。 - 前記第1ウェルと前記第2ウェルは同じ導電型である、請求項1に記載の半導体装置。
- 前記第1ウェルと前記第2ウェルは異なる導電型である、請求項1に記載の半導体装置。
- 前記第2ウェル上の第3フィンと、
前記第2及び第3フィンに接続された第2電極と、
をさらに有する、請求項1に記載の半導体装置。 - 前記第2電極は前記第1フィンにも接続されている、請求項4に記載の半導体装置。
- 前記第2及び第3フィンに接続され、平面視で、前記第1電極と前記第2電極の間に設けられた第3電極をさらに有する、請求項4に記載の半導体装置。
- 前記第3電極は前記第1フィンにも接続されている、請求項6に記載の半導体装置。
- 前記第1ウェル上の第3フィンと、
前記第1及び第3フィンに接続された第2電極と、
をさらに有する、請求項1に記載の半導体装置。 - 前記第2電極は前記第2フィンにも接続されている、請求項8に記載の半導体装置。
- 前記第1及び第3フィンに接続され、平面視で、前記第1電極と前記第2電極の間に設けられた第3電極をさらに有する、請求項8に記載の半導体装置。
- 前記第3電極は前記第2フィンにも接続されている、請求項10に記載の半導体装置。
- 前記第3電極は第1の電位に接続されている、請求項10に記載の半導体装置。
- 半導体基板と、
前記半導体基板に設けられた第1ウェルと、
前記半導体基板に設けられた第2ウェルと、
前記第1ウェルに設けられた第1フィン型トランジスタと、
前記第2ウェルに設けられたフィンと、
を有し、
前記第1フィン型トランジスタの電極は前記第2ウェルに設けられた前記フィンに接続され、
前記第1ウェルと前記第1フィン型トランジスタは異なる導電型であり、
前記第2ウェルと前記フィンは同じ導電型である、半導体装置。 - 半導体基板と、
前記半導体基板に設けられた第1ウェルと、
前記半導体基板に設けられた第2ウェルと、
前記第1ウェル上の第1フィンと、
前記第2ウェル上の第2フィンと、
前記第1及び第2フィンに接続された第1電極と、
を有し、
前記第1ウェルと前記第1フィンは同じ導電型であり、
前記第2ウェルと前記第2フィンは同じ導電型であり、
前記第1ウェルと前記第2ウェルは異なる導電型である、半導体装置。
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PCT/JP2015/003172 WO2016207930A1 (ja) | 2015-06-24 | 2015-06-24 | 半導体装置 |
EP15896254.8A EP3316287A4 (en) | 2015-06-24 | 2015-06-24 | SEMICONDUCTOR DEVICE |
KR1020177027811A KR102372001B1 (ko) | 2015-06-24 | 2015-06-24 | 반도체 장치 |
CN201580077422.1A CN107431044B (zh) | 2015-06-24 | 2015-06-24 | 半导体器件 |
JP2017524147A JPWO2016207930A1 (ja) | 2015-06-24 | 2015-06-24 | 半導体装置 |
US15/545,270 US20180012891A1 (en) | 2015-06-24 | 2015-06-24 | Semiconductor device |
EP21198925.6A EP3968365A1 (en) | 2015-06-24 | 2015-06-24 | Semiconductor device |
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US10910370B2 (en) * | 2018-11-02 | 2021-02-02 | Samsung Electronics Co., Ltd. | Integrated circuit devices including a vertical field-effect transistor (VFET) and a fin field-effect transistor (FinFET) and methods of forming the same |
US11877445B2 (en) | 2021-01-15 | 2024-01-16 | Micron Technology, Inc. | Integrated assemblies and semiconductor memory devices |
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KR20180020122A (ko) | 2018-02-27 |
KR102372001B1 (ko) | 2022-03-08 |
JPWO2016207930A1 (ja) | 2017-09-07 |
CN107431044B (zh) | 2021-11-30 |
US10825814B2 (en) | 2020-11-03 |
CN107431044A (zh) | 2017-12-01 |
US20190198499A1 (en) | 2019-06-27 |
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