WO2016190059A1 - 半導体装置、製造方法、固体撮像素子、および電子機器 - Google Patents

半導体装置、製造方法、固体撮像素子、および電子機器 Download PDF

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WO2016190059A1
WO2016190059A1 PCT/JP2016/063630 JP2016063630W WO2016190059A1 WO 2016190059 A1 WO2016190059 A1 WO 2016190059A1 JP 2016063630 W JP2016063630 W JP 2016063630W WO 2016190059 A1 WO2016190059 A1 WO 2016190059A1
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Prior art keywords
semiconductor substrate
film
interlayer film
signal processing
sensor
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PCT/JP2016/063630
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English (en)
French (fr)
Inventor
宣年 藤井
雅希 羽根田
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ソニー株式会社
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Publication date
Application filed by ソニー株式会社 filed Critical ソニー株式会社
Priority to CN202111127348.3A priority Critical patent/CN113990839B/zh
Priority to CN202111127293.6A priority patent/CN113990838B/zh
Priority to CN202210389474.4A priority patent/CN114899201A/zh
Priority to CN201680023993.1A priority patent/CN107534014B/zh
Priority to CN202210388793.3A priority patent/CN114899200A/zh
Priority to US15/574,207 priority patent/US10332927B2/en
Publication of WO2016190059A1 publication Critical patent/WO2016190059A1/ja
Priority to US16/297,167 priority patent/US10615210B2/en
Priority to US16/830,916 priority patent/US10950637B2/en
Priority to US17/180,359 priority patent/US11776923B2/en
Priority to US18/238,082 priority patent/US20230402411A1/en

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Definitions

  • the present disclosure relates to a semiconductor device, a manufacturing method, a solid-state imaging device, and an electronic device, and particularly relates to a semiconductor device, a manufacturing method, a solid-state imaging device, and an electronic device that can further improve reliability.
  • a solid-state imaging device such as a CCD (Charge Coupled Device) or a CMOS (Complementary Metal Oxide Semiconductor) image sensor is used.
  • the solid-state imaging device has a pixel in which a photodiode that performs photoelectric conversion and a plurality of transistors are combined, and outputs a pixel signal that is output from a plurality of pixels arranged on an image plane on which an object image is formed. Based on this, an image is constructed.
  • Patent Document 1 a metal film is formed on the entire bonding surface of two semiconductor substrates, and a heat treatment is performed in a state where the metal films are in contact with each other, whereby a portion that is in contact with an interlayer insulating layer A semiconductor device in which an insulating film is formed by reaction of the metal film is disclosed.
  • connection pad (Cu) of one wafer is joined to the insulating layer (SiO2) of the other wafer. May be.
  • no barrier metal is provided at the interface between the connection pad and the insulating layer.
  • the copper constituting the connection pad diffuses into the insulation layer from the interface between the connection pad and the insulation layer, causing leakage. There is a concern to do.
  • electromigration Electro-Migration
  • stress migration Stress-Induced-Voiding
  • the present disclosure has been made in view of such a situation, and is intended to further improve the reliability.
  • a semiconductor device is formed on an interlayer film provided in each of wiring layers of a first semiconductor substrate and a second semiconductor substrate, and the electrical connection between the first semiconductor substrate and the second semiconductor substrate Between the connection pad for making a good connection and the interlayer films of the first semiconductor substrate and the second semiconductor substrate, the connection pad formed on the first semiconductor substrate side and the second semiconductor substrate side And a metal oxide film formed between the connection pad formed on the second semiconductor substrate side and the interlayer film on the first semiconductor substrate side.
  • a manufacturing method is formed on an interlayer film provided in each of wiring layers of a first semiconductor substrate and a second semiconductor substrate, and the electrical connection between the first semiconductor substrate and the second semiconductor substrate is performed. Between the connection pad for making a good connection and the interlayer films of the first semiconductor substrate and the second semiconductor substrate, the connection pad formed on the first semiconductor substrate side and the second semiconductor substrate side And a metal oxide film formed between the connection pad formed on the second semiconductor substrate side and the interlayer film on the first semiconductor substrate side.
  • the interlayer film on the first semiconductor substrate side, the bonding surface formed of the connection pads formed on the interlayer film, and the interlayer film on the second semiconductor substrate side Formed on the interlayer film A metal film is formed on at least one of the bonding surfaces formed of the connection pads, and the first semiconductor substrate and the second semiconductor substrate are in close contact with each other via the metal film.
  • a metal film is formed on at least one of the bonding surfaces formed of the connection pads, and the first semiconductor substrate and the second semiconductor substrate are in close contact with each other via the metal film.
  • a solid-state imaging device is formed in a sensor substrate on which a sensor surface having pixels is formed, and an interlayer film provided in a wiring layer of a signal processing substrate that performs signal processing on the sensor substrate, A connection pad for electrical connection between the sensor substrate and the signal processing substrate, and between the interlayer films of the sensor substrate and the signal processing substrate, the connection pad formed on the sensor substrate side and the signal processing substrate side And a metal oxide film formed between the connection pad formed on the signal processing substrate side and the interlayer film on the sensor substrate side.
  • An electronic apparatus is formed on a sensor substrate on which a sensor surface having pixels is formed and an interlayer film provided on a wiring layer of a signal processing substrate that performs signal processing on the sensor substrate, A connection pad for electrical connection between the substrate and the signal processing substrate; and between the sensor substrate and the interlayer film of the signal processing substrate; between the connection pad formed on the sensor substrate side and the signal processing substrate side A solid-state imaging device having a metal oxide film formed between the interlayer film and between the connection pad formed on the signal processing substrate side and the interlayer film on the sensor substrate side is provided.
  • the first semiconductor substrate and the second semiconductor substrate are provided on interlayer films respectively provided in the wiring layers of the first semiconductor substrate (sensor substrate) and the second semiconductor substrate (signal processing substrate).
  • a connection pad for performing electrical connection is formed. And between the interlayer films of the first semiconductor substrate and the second semiconductor substrate, between the connection pad formed on the first semiconductor substrate side and the interlayer film on the second semiconductor substrate side, and the second A metal oxide film is formed between the connection pad formed on the semiconductor substrate side and the interlayer film on the first semiconductor substrate side.
  • the reliability can be further improved.
  • FIG. 1 is a diagram illustrating a configuration example of an embodiment of a solid-state imaging device that is a semiconductor device to which the present technology is applied.
  • FIG. 1 shows an example of a cross-sectional configuration of the solid-state image sensor 11 and a part thereof in an enlarged manner.
  • the solid-state imaging device 11 supports a sensor substrate 13 having a sensor surface 12 formed on an image surface on which an image of a subject is formed by an optical system (not shown), and the sensor substrate 13.
  • substrate 14 affixed in this way is laminated
  • photodiodes which are photoelectric change portions that receive light and convert it into electric charges, are arranged in a matrix, and the pixels receive an image by receiving the light.
  • the sensor substrate 13 is configured by laminating a silicon layer in which a photodiode or a transistor constituting a pixel is formed and a wiring layer in which a wiring connected to the pixel is formed. An image signal of the captured image is output.
  • the wiring layer is configured by forming a conductive metal wiring inside an interlayer film 15 formed of silicon dioxide (SiO 2).
  • the signal processing board 14 performs various kinds of signal processing on the image signal output from the sensor board 13 and then outputs it to an image processing circuit in the subsequent stage. Further, the signal processing board 14 is provided with a wiring layer in which wiring for taking in an image signal output from the sensor board 13 is formed, and the wiring layer is similar to the interlayer film 15 of the sensor board 13. In addition, an interlayer film 16 is provided.
  • the solid-state imaging device 11 is configured by stacking the sensor substrate 13 and the signal processing substrate 14, and the sensor substrate 13 and the signal processing substrate 14 are physically and electrically joined.
  • a cross-sectional configuration example in the vicinity of the two joint terminal portions 21-1 and 21-2 for electrical connection between the sensor board 13 and the signal processing board 14 is enlarged. Is shown.
  • a metal oxide film 22 is formed on the entire surface except where the bonding terminal portions 21-1 and 21-2 are formed.
  • connection pad formed on the interlayer film 15 side of the sensor substrate 13 and the connection pad formed on the interlayer film 16 side of the signal processing substrate 14 are bonded and integrated.
  • a connection pad 23-1 is formed and electrical connection is made.
  • the interlayer film 15 side of the connection pad 23-1 is covered with a barrier metal 24a-1
  • the interlayer film 16 side of the connection pad 23-1 is covered with a barrier metal 24b-1.
  • the connection pad 23-2 formed in the junction terminal portion 21-2 the interlayer film 15 side of the connection pad 23-2 is covered with the barrier metal 24a-2.
  • the interlayer film 16 side is covered with a barrier metal 24b-2.
  • junction terminal portions 21-1 and 21-2 are configured in the same manner. If it is not necessary to distinguish the junction terminal portions 21-1 and 21-2 from time to time, the junction terminal portions 21-1 and 21-2 are simply Called. Similarly, the connection pads 23-1 and 23-1 are referred to as connection pads 23, the barrier metals 24a-1 and 24a-2 are referred to as barrier metals 24a, and the barrier metals 24b-1 and 24b-2 are referred to as barrier metals 24b. .
  • connection pads formed on the interlayer film 15 of the sensor substrate 13 and the connection pads formed on the interlayer film 16 of the signal processing substrate 14 are determined. Adjustments are made to match. At that time, if the positions can be perfectly matched, the connection pads 23 can be covered with the barrier metals 24a and 24b, but in reality, a slight positional shift will occur. Therefore, as shown in FIG. 1, the connection pad 23 is formed in a shape shifted between the interlayer film 15 side and the interlayer film 16 side.
  • the solid-state imaging device 11 has a configuration in which the connection pad 23 and the interlayer films 15 and 16 are not in direct contact with each other by forming the metal oxide film 22. ing. That is, in the solid-state imaging device 11, between the interlayer film 15 of the sensor substrate 13 and the interlayer film 16 of the signal processing substrate 14, and between the connection pad 23 formed on the sensor substrate 13 side and the interlayer film 16 of the signal processing substrate 14. In addition, a metal oxide film 22 is formed between the connection pad 23 formed on the signal processing substrate 14 side and the interlayer film 15 of the sensor substrate 13.
  • connection pad 23 can be prevented from diffusing into the interlayer film 15 or 16, and leakage (between wirings) can be prevented. Short circuit).
  • the adhesion strength between copper constituting the connection pad 23 and SiO 2 constituting the interlayer films 15 and 16 is low.
  • the metal oxide film 22 can be self-formed at the interface between the connection pad 23 and the interlayer films 15 and 16, as will be described later with reference to FIG. Can be secured. Thereby, the solid-state imaging device 11 can be provided with higher electromigration resistance and stress migration resistance, and the reliability can be further improved than before.
  • connection pads 23a and 23b are formed on the sensor substrate 13 and the signal processing substrate 14 by a damascene process, respectively.
  • a wiring groove is formed by lithography and dry etching in silicon dioxide (SiO 2) or an insulating film equivalent to the interlayer film 15 and becomes a diffusion barrier between the connection pad 23a and the interlayer film 15 in the wiring groove.
  • Barrier metal 24a is formed.
  • the barrier metal 24a can be formed, for example, by performing physical vapor deposition (PVD: Physical Vapor Deposition) of tantalum (Ta).
  • connection pad 23a is formed.
  • a connection pad 23b is formed in the interlayer film 16 of the signal processing substrate 14 using the barrier metal 24b as a diffusion barrier.
  • a metal film 31a is formed on the entire surface of the interlayer film 15 and the connection pad 23a.
  • a metal film 31b is formed on the entire surface of the interlayer film 16 and the connection pad 23b.
  • the metal films 31a and 31b contain at least one element of manganese (Mn), vanadium (V), aluminum (Al), magnesium (Mg), or zirconium (Zr), and contain 0.1 It is configured by depositing with a thickness of about 10 nm.
  • the metal employed as the metal films 31a and 31b for example, a metal having a property of reacting with SiO2 constituting the interlayer films 15 and 16 to form an oxide in a later heat treatment is selected. Thereby, the leak which generate
  • the metal film 31a is formed on the entire surface of the interlayer film 15 and the connection pad 23a in the sensor substrate 13, and the entire surface of the interlayer film 16 and the connection pad 23b in the signal processing substrate 14. A metal film 31b is formed. Then, the metal film 31a of the sensor substrate 13 and the metal film 31b of the signal processing board 14 face each other, and the alignment is adjusted so that the positions of the connection pads 23a and 23b coincide.
  • the entire surface of the metal film 31a of the sensor substrate 13 and the entire surface of the metal film 31b of the signal processing substrate 14 are brought into close contact with each other so that no unbonded regions are provided.
  • a process is performed.
  • the bonding is performed in a state where the metal film 31 is formed on the entire surface of either the bonding surface of the sensor substrate 13 or the bonding surface of the signal processing substrate 14. Note that before this step is performed, it is preferable to perform pretreatment using a liquid or gas containing hydrogen on the metal film 31a and the metal film 31b in order to improve the bonding strength by hydrogen bonding.
  • the metal films 31a and 31b are dissolved in copper constituting the connection pads 23a and 23b, and the metal oxide film 22 is self-formed by the reaction between the metal and the oxide film. Is done. That is, as a final structure, the metal oxide film 22 is formed between the connection pad 23 and the interlayer films 15 and 16, the connection pads 23a and 23b are integrated, and the metal film 31 does not exist at the interface between them. It will be a thing. It is generally known that many metals easily oxidize. However, when a metal (for example, tantalum) serving as a conventional diffusion barrier is used as the metal films 31a and 31b, diffusion of tantalum by oxidation is performed. The element selection is important because the barrier performance is lost.
  • a metal for example, tantalum
  • the sensor substrate 13 and the signal processing substrate 14 are physically and electrically joined by the above process.
  • the metal oxide film 22 functions as a diffusion barrier, so that occurrence of leakage between the connection pads 23 (short circuit between wirings) can be suppressed. . Further, since the adhesion strength can be ensured by self-forming the metal oxide film 22, the reliability can be further improved.
  • the solid-state imaging device 11 can obtain good conduction characteristics. For example, when a metal element (for example, titanium) that leaves the metal film 31 at the interface between the connection pads 23a and 23b after heat treatment is used, the resistance value increases. On the other hand, in the solid-state imaging device 11, it is possible to avoid such an increase in resistance value. The element constituting the metal film 31 between the connection pads 23a and 23b is detected in the connection pad 23.
  • a metal element for example, titanium
  • the occurrence of leakage can be satisfactorily suppressed by forming the metal oxide film 22 thin by setting the thickness of the metal films 31a and 31b to about 0.1 to 10 nm.
  • the metal film 31 is not formed on both the interlayer film 15 of the sensor substrate 13 and the interlayer film 16 of the signal processing substrate 14, but the metal film 31 is formed on at least one of them. It suffices if the metal oxide film 22 is reliably formed.
  • Patent Document 1 discloses a configuration example in which titanium (Ti) is a metal film. Titanium can be easily oxidized, and at the same time has a passive state that loses the reactivity shown in a normal state. Since it is easy to form, the whole thin film cannot be oxidized. Such a metal that easily forms a passivation is inappropriate for use as the metal film 31 of the solid-state imaging device 11, and a metal that does not form a passivation such as manganese is used as the metal film 31 of the solid-state imaging device 11. It is preferred to use.
  • the present technology can be applied to various stacked semiconductor devices (for example, memories) configured by bonding wafers, for example.
  • the solid-state imaging device 11 of each embodiment as described above is, for example, an imaging system such as a digital still camera or a digital video camera, a mobile phone having an imaging function, or other equipment having an imaging function. It can be applied to various electronic devices.
  • FIG. 3 is a block diagram illustrating a configuration example of an imaging device mounted on an electronic device.
  • the imaging apparatus 101 includes an optical system 102, an imaging element 103, a signal processing circuit 104, a monitor 105, and a memory 106, and can capture still images and moving images.
  • the optical system 102 includes one or more lenses, guides image light (incident light) from a subject to the image sensor 103, and forms an image on a light receiving surface (sensor unit) of the image sensor 103.
  • the solid-state image sensor 11 of the above-described embodiment is applied.
  • the image sensor 103 electrons are accumulated for a certain period according to an image formed on the light receiving surface via the optical system 102. Then, a signal corresponding to the electrons accumulated in the image sensor 103 is supplied to the signal processing circuit 104.
  • the signal processing circuit 104 performs various signal processing on the pixel signal output from the image sensor 103.
  • An image (image data) obtained by performing signal processing by the signal processing circuit 104 is supplied to the monitor 105 and displayed, or supplied to the memory 106 and stored (recorded).
  • the solid-state imaging device 11 of the above-described embodiment by applying the solid-state imaging device 11 of the above-described embodiment, for example, durability can be further improved and imaging can be performed reliably.
  • FIG. 4 is a diagram showing a usage example in which the above-described solid-state imaging device 11 (image sensor) is used.
  • the image sensor described above can be used in various cases for sensing light such as visible light, infrared light, ultraviolet light, and X-ray as follows.
  • Devices for taking images for viewing such as digital cameras and mobile devices with camera functions
  • Devices used for traffic such as in-vehicle sensors that capture the back, surroundings, and interiors of vehicles, surveillance cameras that monitor traveling vehicles and roads, and ranging sensors that measure distances between vehicles, etc.
  • Equipment used for home appliances such as TVs, refrigerators, air conditioners, etc. to take pictures and operate the equipment according to the gestures ⁇ Endoscopes, equipment that performs blood vessel photography by receiving infrared light, etc.
  • Equipment used for medical and health care ⁇ Security equipment such as security surveillance cameras and personal authentication cameras ⁇ Skin measuring instrument for photographing skin and scalp photography Such as a microscope to do beauty Equipment used for sports-Equipment used for sports such as action cameras and wearable cameras for sports applications-Used for agriculture such as cameras for monitoring the condition of fields and crops apparatus
  • this technique can also take the following structures.
  • the metal oxide film is self-formed by a reaction between the metal film and the interlayer film by performing a heat treatment in a state where the first semiconductor substrate and the second semiconductor substrate are in close contact with each other through the metal film.
  • the semiconductor device according to (1) (3) In the heat treatment, the metal film has a portion sandwiched between the connection pad formed on the first semiconductor substrate side and the connection pad formed on the second semiconductor substrate side.
  • the semiconductor device according to (2) which is made of a metal having a property of being dissolved in a connection pad.
  • the metal film is made of a metal having a property of reacting with the interlayer film in the heat treatment to form an insulating oxide.
  • the metal film includes at least one element of manganese, vanadium, aluminum, magnesium, or zirconium.
  • the metal film is formed to have a thickness ranging from 0.1 nm to 10 nm.
  • the metal film is subjected to pretreatment using a liquid or gas containing hydrogen.
  • connection pad formed in an interlayer film provided in each of the wiring layers of the first semiconductor substrate and the second semiconductor substrate, and for electrically connecting the first semiconductor substrate and the second semiconductor substrate; Between the interlayer films of the first semiconductor substrate and the second semiconductor substrate, between the connection pads formed on the first semiconductor substrate side and the interlayer film on the second semiconductor substrate side, And a method of manufacturing a semiconductor device comprising: a metal oxide film formed between the connection pad formed on the second semiconductor substrate side and the interlayer film on the first semiconductor substrate side; Formed on the interlayer film on the first semiconductor substrate side and the junction surface formed on the interlayer film, on the interlayer film on the second semiconductor substrate side, and on the interlayer film.
  • a manufacturing method including a step. (10) A sensor substrate on which a sensor surface having pixels is formed, and an interlayer film provided on a wiring layer of a signal processing substrate that performs signal processing on the sensor substrate, and the electrical connection between the sensor substrate and the signal processing substrate A connection pad for connection; It is formed between interlayer films of the sensor substrate and the signal processing board, between the connection pads formed on the sensor board side and the interlayer film on the signal processing board side, and on the signal processing board side.
  • a solid-state imaging device comprising: a metal oxide film formed between the connection pad and the interlayer film on the sensor substrate side.
  • An electronic apparatus comprising: a solid-state imaging device having a metal oxide film formed between the connection pad and the interlayer film on the sensor substrate side.
  • 11 solid-state imaging device 12 sensor surface, 13 sensor substrate, 14 signal processing substrate, 15 and 16 interlayer film, 21 junction terminal, 22 metal oxide film, 23 connection pad, 24 barrier metal, 31 metal film

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Abstract

本開示は、信頼性の更なる向上を図ることができるようにする半導体装置、製造方法、固体撮像素子、および電子機器に関する。 画素を有するセンサ面が形成されるセンサ基板、および、センサ基板に対する信号処理を行う信号処理基板の配線層にそれぞれ設けられる層間膜に、センサ基板および信号処理基板の電気的な接続を行う接続パッドが形成される。そして、センサ基板および信号処理基板の層間膜どうしの間、センサ基板側に形成される接続パッドと信号処理基板側の層間膜との間、および、信号処理基板側に形成される接続パッドとセンサ基板側の層間膜との間に金属酸化膜が形成される。本技術は、例えば、積層型のCMOSイメージセンサに適用できる。

Description

半導体装置、製造方法、固体撮像素子、および電子機器
 本開示は、半導体装置、製造方法、固体撮像素子、および電子機器に関し、特に、信頼性の更なる向上を図ることができるようにした半導体装置、製造方法、固体撮像素子、および電子機器に関する。
 従来、デジタルスチルカメラやデジタルビデオカメラなどの撮像機能を備えた電子機器においては、例えば、CCD(Charge Coupled Device)やCMOS(Complementary Metal Oxide Semiconductor)イメージセンサなどの固体撮像素子が使用されている。固体撮像素子は、光電変換を行うフォトダイオードと複数のトランジスタとが組み合わされた画素を有しており、被写体の像が結像する像面に配置された複数の画素から出力される画素信号に基づいて画像が構築される。
 また、近年、固体撮像素子の小型化および高機能化を図るために、画素が形成されるセンサ基板に、センサ基板から出力される画像信号に対する信号処理を行う信号処理基板を積層した積層型の固体撮像素子が開発されている。このような積層型の固体撮像素子では、ウェハの接合面どうしを物理的に接続するとともに、接合面に形成される接続パッドどうしを電気的に接続するような複合的な接合が行われる。
 例えば、特許文献1には、2枚の半導体基板の接合面の全面に金属膜を成膜して、金属膜どうしを接触させた状態で加熱処理を行うことで、層間絶縁層と接触する部分の金属膜が反応して絶縁膜が形成された半導体装置が開示されている。
特開2013-168419号公報
 ところで、従来、ウェハどうしを接合する際に、アライメントのずれが発生することによって、一方のウェハの接続パッド(Cu)の一部が、他方のウェハの絶縁層(SiO2)に接合された構造となることがある。このような構造では、接続パッドおよび絶縁層の界面にはバリアメタルが設けられないことになる。このため、熱を加える後工程(例えば、post bond annealや、ILD depoなど)において、接続パッドと絶縁層との界面から、接続パッドを構成する銅が絶縁層に拡散してしまい、リークが発生することが懸念される。
 また、接続パッド(Cu)と絶縁層(SiO2)とは密着強度が低いことより、全体の接合強度(ウェハ接合強度)が低下することが懸念される。このため、エレクトロマイグレーション(Electro Migration)耐性やストレスマイグレーション(Stress Induced Voiding)耐性などが低下してしまい、全体として信頼性が低下することになっていた。
 本開示は、このような状況に鑑みてなされたものであり、信頼性の更なる向上を図ることができるようにするものである。
 本開示の一側面の半導体装置は、第1の半導体基板および第2の半導体基板の配線層にそれぞれ設けられる層間膜に形成され、前記第1の半導体基板および前記第2の半導体基板の電気的な接続を行う接続パッドと、前記第1の半導体基板および前記第2の半導体基板の層間膜どうしの間、前記第1の半導体基板側に形成される前記接続パッドと前記第2の半導体基板側の前記層間膜との間、および、前記第2の半導体基板側に形成される前記接続パッドと前記第1の半導体基板側の前記層間膜との間に形成される金属酸化膜とを備える。
 本開示の一側面の製造方法は、第1の半導体基板および第2の半導体基板の配線層にそれぞれ設けられる層間膜に形成され、前記第1の半導体基板および前記第2の半導体基板の電気的な接続を行う接続パッドと、前記第1の半導体基板および前記第2の半導体基板の層間膜どうしの間、前記第1の半導体基板側に形成される前記接続パッドと前記第2の半導体基板側の前記層間膜との間、および、前記第2の半導体基板側に形成される前記接続パッドと前記第1の半導体基板側の前記層間膜との間に形成される金属酸化膜とを備える半導体装置の製造方法において、前記第1の半導体基板側の前記層間膜と、その層間膜に形成される前記接続パッドとからなる接合面、および、前記第2の半導体基板側の前記層間膜と、その層間膜に形成される前記接続パッドとからなる接合面の少なくとも一方の接合面に金属膜を成膜し、前記第1の半導体基板と前記第2の半導体基板とを前記金属膜を介して密着させた状態で熱処理を施すことによって、前記金属膜と前記層間膜との反応による前記金属酸化膜を自己形成するステップを含む。
 本開示の一側面の固体撮像素子は、画素を有するセンサ面が形成されるセンサ基板、および、前記センサ基板に対する信号処理を行う信号処理基板の配線層にそれぞれ設けられる層間膜に形成され、前記センサ基板および前記信号処理基板の電気的な接続を行う接続パッドと、前記センサ基板および前記信号処理基板の層間膜どうしの間、前記センサ基板側に形成される前記接続パッドと前記信号処理基板側の前記層間膜との間、および、前記信号処理基板側に形成される前記接続パッドと前記センサ基板側の前記層間膜との間に形成される金属酸化膜とを備える。
 本開示の一側面の電子機器は、画素を有するセンサ面が形成されるセンサ基板、および、前記センサ基板に対する信号処理を行う信号処理基板の配線層にそれぞれ設けられる層間膜に形成され、前記センサ基板および前記信号処理基板の電気的な接続を行う接続パッドと、前記センサ基板および前記信号処理基板の層間膜どうしの間、前記センサ基板側に形成される前記接続パッドと前記信号処理基板側の前記層間膜との間、および、前記信号処理基板側に形成される前記接続パッドと前記センサ基板側の前記層間膜との間に形成される金属酸化膜とを有する固体撮像素子を備える。
 本開示の一側面においては、第1の半導体基板(センサ基板)および第2の半導体基板(信号処理基板)の配線層にそれぞれ設けられる層間膜に、第1の半導体基板および第2の半導体基板の電気的な接続を行う接続パッドが形成される。そして、第1の半導体基板および第2の半導体基板の層間膜どうしの間、第1の半導体基板側に形成される接続パッドと第2の半導体基板側の層間膜との間、および、第2の半導体基板側に形成される接続パッドと第1の半導体基板側の層間膜との間に、金属酸化膜が形成される。
 本開示の一側面によれば、信頼性の更なる向上を図ることができる。
本技術を適用した固体撮像素子の一実施の形態の構成例を示す図である。 固体撮像素子の製造方法を説明する図である。 電子機器に搭載される撮像装置の構成例を示すブロック図である。 イメージセンサを使用する使用例を示す図である。
 以下、本技術を適用した具体的な実施の形態について、図面を参照しながら詳細に説明する。
 図1は、本技術を適用した半導体装置である固体撮像素子の一実施の形態の構成例を示す図である。
 図1には、固体撮像素子11の断面的な構成例と、その一部が拡大して示されている。
 図1に示すように、固体撮像素子11は、図示しない光学系により被写体の像が結像される像面に配置されるセンサ面12が形成されるセンサ基板13と、センサ基板13を支持するように貼り付けられる信号処理基板14とが積層されて構成される。
 センサ面12は、光を受光して電荷に変換する光電変化部であるフォトダイオードが行列状に配置されており、それらの画素が光を受光することにより撮像を行う。
 センサ基板13は、例えば、画素を構成するフォトダイオードやトランジスタなどが形成されるシリコン層と、画素に接続される配線が形成される配線層とが積層されて構成されており、センサ面12において撮像された画像の画像信号を出力する。例えば、配線層は、二酸化ケイ素(SiO2)により形成される層間膜15の内部に、導電性を有する金属配線が形成されて構成される。
 信号処理基板14は、センサ基板13から出力される画像信号に対して各種の信号処理を施した後に、後段の画像処理回路などに出力する。また、信号処理基板14には、センサ基板13から出力される画像信号を取り込むための配線が形成される配線層が設けられており、その配線層には、センサ基板13の層間膜15と同様に、層間膜16が設けられる。
 このように、固体撮像素子11は、センサ基板13および信号処理基板14が積層されて構成されており、センサ基板13と信号処理基板14とが物理的および電気的に接合される。例えば、図1の右側には、センサ基板13および信号処理基板14の間で、電気的な接続を行う2つの接合端子部21-1および21-2の近傍における断面的な構成例が拡大して示されている。
 センサ基板13および信号処理基板14の接合面には、接合端子部21-1および21-2が形成される箇所以外の全面に金属酸化膜22が形成されている。
 また、接合端子部21-1では、センサ基板13の層間膜15側に形成された接続パッドと、信号処理基板14の層間膜16側に形成された接続パッドとが接合されて一体となった接続パッド23-1が形成され、電気的な接続が行われる。接続パッド23-1の層間膜15側は、バリアメタル24a-1により覆われており、接続パッド23-1の層間膜16側は、バリアメタル24b-1により覆われている。同様に、接合端子部21-2に形成される接続パッド23-2についても、接続パッド23-2の層間膜15側は、バリアメタル24a-2により覆われており、接続パッド23-2の層間膜16側は、バリアメタル24b-2により覆われている。
 なお、接合端子部21-1および21-2は同様に構成されており、以下適宜、接合端子部21-1および21-2を区別する必要がない場合には、単に、接合端子部21と称する。同様に、接続パッド23-1および23-1を接続パッド23と称し、バリアメタル24a-1および24a-2をバリアメタル24aと称し、バリアメタル24b-1および24b-2をバリアメタル24bと称する。
 ここで、センサ基板13および信号処理基板14を接合する際に、センサ基板13の層間膜15に形成された接続パッドと、信号処理基板14の層間膜16に形成された接続パッドとの位置を合わせる調整が行われる。そのとき、それらの位置を完全に一致させることができれば、バリアメタル24aおよび24bにより接続パッド23を覆うことができるが、実際には、多少の位置ずれが発生してしまう。そのため、図1に示すように、接続パッド23は、層間膜15側と層間膜16側とでずれた形状に形成されてしまう。
 このような位置ずれが発生したとしても、固体撮像素子11では、金属酸化膜22を形成することにより、接続パッド23と層間膜15および16とが直接的に接することがないような構成となっている。即ち、固体撮像素子11では、センサ基板13の層間膜15および信号処理基板14の層間膜16の間、センサ基板13側に形成される接続パッド23と信号処理基板14の層間膜16との間、並びに、信号処理基板14側に形成される接続パッド23とセンサ基板13の層間膜15との間に、金属酸化膜22が形成される。
 このように形成される金属酸化膜22が拡散バリアとして機能することにより、接続パッド23を構成する銅が、層間膜15または16に拡散することを防止することができ、リークの発生(配線間のショート)を抑制することができる。
 また、接続パッド23を構成する銅と、層間膜15および16を構成するSiO2とは密着強度が低いことが知られている。これに対し、固体撮像素子11では、図2を参照して後述するように、接続パッド23と層間膜15および16との界面に金属酸化膜22を自己形成することができるため、密着強度を確保することができる。これにより、固体撮像素子11は、より高いエレクトロマイグレーション耐性およびストレスマイグレーション耐性を備えることができ、従来よりも更に、信頼性の向上を図ることができる。
 次に、図2を参照して、固体撮像素子11の製造方法におけるセンサ基板13および信号処理基板14の接合工程について説明する。
 まず、センサ基板13および信号処理基板14を接合する工程が行われる前に、センサ基板13および信号処理基板14それぞれにおいて、ダマシンプロセスにより接続パッド23aおよび23bが形成される。
 ここで、センサ基板13の層間膜15に接続パッド23aを形成する工程について説明する。まず、層間膜15となる二酸化ケイ素(SiO2)またはそれに準ずる絶縁膜中へ配線溝をリソグラフィーおよびドライエッチングで形成し、その配線溝に、接続パッド23aと層間膜15との間で拡散バリアとなるバリアメタル24aを形成する。バリアメタル24aは、例えば、タンタル(Ta)を物理蒸着(PVD:Physical Vapor Deposition)することにより形成することができる。
 その後、後工程のめっきプロセスの電極となる銅(銅合金)シード層を、例えば、物理蒸着により形成した後、めっきプロセスで銅を充填して、余剰の銅を化学機械研磨(CMP:Chemical mechanical polishing)で除去することで、配線溝に銅が充填される。このような工程により、接続パッド23aが形成される。また、同様の工程により、信号処理基板14の層間膜16に、バリアメタル24bを拡散バリアとして接続パッド23bが形成される。
 そして、層間膜15および接続パッド23aの全面に、金属膜31aを成膜する。同様に、層間膜16および接続パッド23bの全面に、金属膜31bを成膜する。このとき、金属膜31aおよび31bは、マンガン(Mn)、バナジウム(V)、アルミニウム(Al)、マグネシウム(Mg)、またはジルコニウム(Zr)の中の少なくとも一つ以上の元素を含み、それらを0.1~10nm程度の厚みで堆積させることにより構成される。
 このような金属膜31aおよび31bとして採用される金属としては、例えば、後の熱処理で層間膜15および16を構成するSiO2と反応して酸化物を形成する性質を有する金属が選択される。これにより、接続パッド23の間で発生するリークを抑制することができる。即ち、酸化物としては、銅の拡散を防止するバリアとして機能する絶縁性を備え、かつ、接続パッド23を構成する銅へ固溶する(接続パッド23の界面の導通を妨げない)性質を備えるものを使用することが望ましい。
 これにより、図2の上段に示すように、センサ基板13では、層間膜15および接続パッド23aの全面に金属膜31aが成膜され、信号処理基板14では、層間膜16および接続パッド23bの全面に金属膜31bが成膜される。そして、センサ基板13の金属膜31aと信号処理基板14の金属膜31bとを向い合せて、接続パッド23aおよび23bの位置が一致するようにアライメントが調整される。
 そして、図2の中段に示すように、センサ基板13の金属膜31aの全面と信号処理基板14の金属膜31bの全面とを密着させ、互いに未接合となる領域が設けられないように接合させる工程が行われる。このとき、例えば、センサ基板13の接合面と信号処理基板14の接合面とのいずれか一方の全面に、金属膜31が成膜された状態で接合が行われる。なお、この工程が行われる前に、水素結合による接合強度の向上を図るために、金属膜31aおよび金属膜31bに対して、水素を含む液体または気体を用いた前処理を行うことが好ましい。
 その後、センサ基板13および信号処理基板14を密着させたまま、例えば、400度以下の熱負荷を加える工程が行われる。
 これにより、図2の下段に示すように、接続パッド23aおよび23bを構成する銅の中へ金属膜31aおよび31bが固溶されるとともに、金属と酸化膜の反応による金属酸化膜22が自己形成される。即ち、最終構造としては、接続パッド23と層間膜15および16との間に金属酸化膜22が形成され、接続パッド23aおよび23bは一体となって、それらの界面には金属膜31は存在しないものとなる。なお、金属は容易に酸化するものが多い事は一般的に知られているが、従来の拡散バリアとなる金属(例えば、タンタル)を金属膜31aおよび31bとして用いた場合、酸化によりタンタルの拡散バリア性能が失われてしまうため、元素選定が重要である。
 以上のような工程により、センサ基板13および信号処理基板14が物理的および電気的に接合される。
 このような製造方法により製造される固体撮像素子11は、金属酸化膜22が拡散バリアとして機能することにより、接続パッド23の間でのリークの発生(配線間のショート)を抑制することができる。また、金属酸化膜22を自己形成することにより密着強度を確保することができるため、信頼性の更なる向上を図ることができる。
 また、固体撮像素子11は、上述したように、接続パッド23aおよび23bの界面には金属膜31は存在しないため、良好な導通特性を得ることができる。例えば、熱処理後においても接続パッド23aおよび23bの界面に金属膜31が残るような金属元素(例えば、チタン)を用いた場合には、抵抗値が上昇することになる。これに対し、固体撮像素子11では、このような抵抗値が上昇することを回避することができる。なお、接続パッド23aおよび23bの間にあった金属膜31を構成していた元素は、接続パッド23中に検出される。
 また、固体撮像素子11は、金属膜31aおよび31bの厚みを0.1~10nm程度とすることで、金属酸化膜22を薄く形成することによって、リークの発生を良好に抑制することができる。
 なお、図2を参照して説明したように、センサ基板13の層間膜15と信号処理基板14の層間膜16との両方に金属膜31を成膜するのではなく、少なくとも一方に金属膜31が成膜されていればよく、金属酸化膜22が確実に形成されるような構成であればよい。
 さらに、金属膜31として使用可能な元素としては、上述したものの他、ニッケル(Ni)、コバルト(Co)、鉄(Fe)、亜鉛(Zn)、または銀(Ag)を用いることができる。例えば、特許文献1では、チタン(Ti)を金属膜とした構成例が開示されているが、チタンは、容易に酸化し得るのと同時に、普通の状態で示す反応性を失った不動態を形成し易いため、薄膜全体が酸化できないような状態が発生してしまう。このような不動態を形成し易い金属は、固体撮像素子11の金属膜31として使用するのに不適切であり、マンガンなどの不動態を形成しない金属を、固体撮像素子11の金属膜31として使用することが好適である。
 なお、本技術は、上述したような固体撮像素子11の他、例えば、ウェハどうしが接合されて構成される様々な積層型の半導体装置(例えば、メモリ)に適用することができる。
 なお、上述したような各実施の形態の固体撮像素子11は、例えば、デジタルスチルカメラやデジタルビデオカメラなどの撮像システム、撮像機能を備えた携帯電話機、または、撮像機能を備えた他の機器といった各種の電子機器に適用することができる。
 図3は、電子機器に搭載される撮像装置の構成例を示すブロック図である。
 図3に示すように、撮像装置101は、光学系102、撮像素子103、信号処理回路104、モニタ105、およびメモリ106を備えて構成され、静止画像および動画像を撮像可能である。
 光学系102は、1枚または複数枚のレンズを有して構成され、被写体からの像光(入射光)を撮像素子103に導き、撮像素子103の受光面(センサ部)に結像させる。
 撮像素子103としては、上述した実施の形態の固体撮像素子11が適用される。撮像素子103には、光学系102を介して受光面に結像される像に応じて、一定期間、電子が蓄積される。そして、撮像素子103に蓄積された電子に応じた信号が信号処理回路104に供給される。
 信号処理回路104は、撮像素子103から出力された画素信号に対して各種の信号処理を施す。信号処理回路104が信号処理を施すことにより得られた画像(画像データ)は、モニタ105に供給されて表示されたり、メモリ106に供給されて記憶(記録)されたりする。
 このように構成されている撮像装置101では、上述した実施の形態の固体撮像素子11を適用することで、例えば、より耐久性を向上させることができ、撮像を確実に行うことができる。
 図4は、上述の固体撮像素子11(イメージセンサ)を使用する使用例を示す図である。
 上述したイメージセンサは、例えば、以下のように、可視光や、赤外光、紫外光、X線等の光をセンシングする様々なケースに使用することができる。
 ・ディジタルカメラや、カメラ機能付きの携帯機器等の、鑑賞の用に供される画像を撮影する装置
 ・自動停止等の安全運転や、運転者の状態の認識等のために、自動車の前方や後方、周囲、車内等を撮影する車載用センサ、走行車両や道路を監視する監視カメラ、車両間等の測距を行う測距センサ等の、交通の用に供される装置
 ・ユーザのジェスチャを撮影して、そのジェスチャに従った機器操作を行うために、TVや、冷蔵庫、エアーコンディショナ等の家電に供される装置
 ・内視鏡や、赤外光の受光による血管撮影を行う装置等の、医療やヘルスケアの用に供される装置
 ・防犯用途の監視カメラや、人物認証用途のカメラ等の、セキュリティの用に供される装置
 ・肌を撮影する肌測定器や、頭皮を撮影するマイクロスコープ等の、美容の用に供される装置
 ・スポーツ用途等向けのアクションカメラやウェアラブルカメラ等の、スポーツの用に供される装置
 ・畑や作物の状態を監視するためのカメラ等の、農業の用に供される装置
 なお、本技術は以下のような構成も取ることができる。
(1)
 第1の半導体基板および第2の半導体基板の配線層にそれぞれ設けられる層間膜に形成され、前記第1の半導体基板および前記第2の半導体基板の電気的な接続を行う接続パッドと、
 前記第1の半導体基板および前記第2の半導体基板の層間膜どうしの間、前記第1の半導体基板側に形成される前記接続パッドと前記第2の半導体基板側の前記層間膜との間、および、前記第2の半導体基板側に形成される前記接続パッドと前記第1の半導体基板側の前記層間膜との間に形成される金属酸化膜と
 を備える半導体装置。
(2)
 前記第1の半導体基板側の前記層間膜と、その層間膜に形成される前記接続パッドとからなる接合面、および、前記第2の半導体基板側の前記層間膜と、その層間膜に形成される前記接続パッドとからなる接合面の少なくとも一方の接合面に金属膜を成膜し、
 前記第1の半導体基板と前記第2の半導体基板とを前記金属膜を介して密着させた状態で熱処理を施すことによって、前記金属膜と前記層間膜との反応による前記金属酸化膜が自己形成される
 上記(1)に記載の半導体装置。
(3)
 前記金属膜は、前記熱処理において、前記第1の半導体基板側に形成される前記接続パッドと前記第2の半導体基板側に形成される前記接続パッドとの間に挟まれていた部分が、前記接続パッドに固溶する性質を有する金属により構成される
 上記(2)に記載の半導体装置。
(4)
 前記金属膜は、前記熱処理において前記層間膜と反応して、絶縁性を備える酸化物を形成する性質を有する金属により構成される
 上記(2)または(3)に記載の半導体装置。
(5)
 前記金属膜は、マンガン、バナジウム、アルミニウム、マグネシウム、またはジルコニウムの中の少なくとも一つ以上の元素を含んで構成される
 上記(2)から(4)までのいずれかに記記載の半導体装置。
(6)
 前記金属膜は、厚みが0.1 nmから10nmまでの範囲となるように成膜される
 上記(2)から(5)までのいずれかに記載の半導体装置。
(7)
 前記金属膜が前記層間膜および前記接続パッドの全面に成膜された状態で、前記金属膜に対して水素を含む液体または気体を用いた前処理が行われる
 上記(2)から(6)までのいずれかに記載の半導体装置。
(8)
 前記第1の半導体基板および前記第2の半導体基板を接合するとき、少なくとも一方の前記接合面の全面に前記金属膜が成膜された状態で接合が行われる
 上記(2)から(7)までのいずれかに記載の半導体装置。
(9)
  第1の半導体基板および第2の半導体基板の配線層にそれぞれ設けられる層間膜に形成され、前記第1の半導体基板および前記第2の半導体基板の電気的な接続を行う接続パッドと、
  前記第1の半導体基板および前記第2の半導体基板の層間膜どうしの間、前記第1の半導体基板側に形成される前記接続パッドと前記第2の半導体基板側の前記層間膜との間、および、前記第2の半導体基板側に形成される前記接続パッドと前記第1の半導体基板側の前記層間膜との間に形成される金属酸化膜と
 を備える半導体装置の製造方法において、
 前記第1の半導体基板側の前記層間膜と、その層間膜に形成される前記接続パッドとからなる接合面、および、前記第2の半導体基板側の前記層間膜と、その層間膜に形成される前記接続パッドとからなる接合面の少なくとも一方の接合面に金属膜を成膜し、
 前記第1の半導体基板と前記第2の半導体基板とを前記金属膜を介して密着させた状態で熱処理を施すことによって、前記金属膜と前記層間膜との反応による前記金属酸化膜を自己形成する
 ステップを含む製造方法。
(10)
 画素を有するセンサ面が形成されるセンサ基板、および、前記センサ基板に対する信号処理を行う信号処理基板の配線層にそれぞれ設けられる層間膜に形成され、前記センサ基板および前記信号処理基板の電気的な接続を行う接続パッドと、
 前記センサ基板および前記信号処理基板の層間膜どうしの間、前記センサ基板側に形成される前記接続パッドと前記信号処理基板側の前記層間膜との間、および、前記信号処理基板側に形成される前記接続パッドと前記センサ基板側の前記層間膜との間に形成される金属酸化膜と
 を備える固体撮像素子。
(11)
 画素を有するセンサ面が形成されるセンサ基板、および、前記センサ基板に対する信号処理を行う信号処理基板の配線層にそれぞれ設けられる層間膜に形成され、前記センサ基板および前記信号処理基板の電気的な接続を行う接続パッドと、
 前記センサ基板および前記信号処理基板の層間膜どうしの間、前記センサ基板側に形成される前記接続パッドと前記信号処理基板側の前記層間膜との間、および、前記信号処理基板側に形成される前記接続パッドと前記センサ基板側の前記層間膜との間に形成される金属酸化膜と
 を有する固体撮像素子を備える電子機器。
 なお、本実施の形態は、上述した実施の形態に限定されるものではなく、本開示の要旨を逸脱しない範囲において種々の変更が可能である。
 11 固体撮像素子, 12 センサ面, 13 センサ基板, 14 信号処理基板, 15および16 層間膜, 21 接合端子部, 22 金属酸化膜, 23 接続パッド, 24 バリアメタル, 31 金属膜

Claims (11)

  1.  第1の半導体基板および第2の半導体基板の配線層にそれぞれ設けられる層間膜に形成され、前記第1の半導体基板および前記第2の半導体基板の電気的な接続を行う接続パッドと、
     前記第1の半導体基板および前記第2の半導体基板の層間膜どうしの間、前記第1の半導体基板側に形成される前記接続パッドと前記第2の半導体基板側の前記層間膜との間、および、前記第2の半導体基板側に形成される前記接続パッドと前記第1の半導体基板側の前記層間膜との間に形成される金属酸化膜と
     を備える半導体装置。
  2.  前記第1の半導体基板側の前記層間膜と、その層間膜に形成される前記接続パッドとからなる接合面、および、前記第2の半導体基板側の前記層間膜と、その層間膜に形成される前記接続パッドとからなる接合面の少なくとも一方の接合面に金属膜を成膜し、
     前記第1の半導体基板と前記第2の半導体基板とを前記金属膜を介して密着させた状態で熱処理を施すことによって、前記金属膜と前記層間膜との反応による前記金属酸化膜が自己形成される
     請求項1に記載の半導体装置。
  3.  前記金属膜は、前記熱処理において、前記第1の半導体基板側に形成される前記接続パッドと前記第2の半導体基板側に形成される前記接続パッドとの間に挟まれていた部分が、前記接続パッドに固溶する性質を有する金属により構成される
     請求項2に記載の半導体装置。
  4.  前記金属膜は、前記熱処理において前記層間膜と反応して、絶縁性を備える酸化物を形成する性質を有する金属により構成される
     請求項2に記載の半導体装置。
  5.  前記金属膜は、マンガン、バナジウム、アルミニウム、マグネシウム、またはジルコニウムの中の少なくとも一つ以上の元素を含んで構成される
     請求項2に記載の半導体装置。
  6.  前記金属膜は、厚みが0.1 nmから10nmまでの範囲となるように成膜される
     請求項2に記載の半導体装置。
  7.  前記金属膜が前記層間膜および前記接続パッドの全面に成膜された状態で、前記金属膜に対して水素を含む液体または気体を用いた前処理が行われる
     請求項2に記載の半導体装置。
  8.  前記第1の半導体基板および前記第2の半導体基板を接合するとき、少なくとも一方の前記接合面の全面に前記金属膜が成膜された状態で接合が行われる
     請求項2に記載の半導体装置。
  9.   第1の半導体基板および第2の半導体基板の配線層にそれぞれ設けられる層間膜に形成され、前記第1の半導体基板および前記第2の半導体基板の電気的な接続を行う接続パッドと、
      前記第1の半導体基板および前記第2の半導体基板の層間膜どうしの間、前記第1の半導体基板側に形成される前記接続パッドと前記第2の半導体基板側の前記層間膜との間、および、前記第2の半導体基板側に形成される前記接続パッドと前記第1の半導体基板側の前記層間膜との間に形成される金属酸化膜と
     を備える半導体装置の製造方法において、
     前記第1の半導体基板側の前記層間膜と、その層間膜に形成される前記接続パッドとからなる接合面、および、前記第2の半導体基板側の前記層間膜と、その層間膜に形成される前記接続パッドとからなる接合面の少なくとも一方の接合面に金属膜を成膜し、
     前記第1の半導体基板と前記第2の半導体基板とを前記金属膜を介して密着させた状態で熱処理を施すことによって、前記金属膜と前記層間膜との反応による前記金属酸化膜を自己形成する
     ステップを含む製造方法。
  10.  画素を有するセンサ面が形成されるセンサ基板、および、前記センサ基板に対する信号処理を行う信号処理基板の配線層にそれぞれ設けられる層間膜に形成され、前記センサ基板および前記信号処理基板の電気的な接続を行う接続パッドと、
     前記センサ基板および前記信号処理基板の層間膜どうしの間、前記センサ基板側に形成される前記接続パッドと前記信号処理基板側の前記層間膜との間、および、前記信号処理基板側に形成される前記接続パッドと前記センサ基板側の前記層間膜との間に形成される金属酸化膜と
     を備える固体撮像素子。
  11.  画素を有するセンサ面が形成されるセンサ基板、および、前記センサ基板に対する信号処理を行う信号処理基板の配線層にそれぞれ設けられる層間膜に形成され、前記センサ基板および前記信号処理基板の電気的な接続を行う接続パッドと、
     前記センサ基板および前記信号処理基板の層間膜どうしの間、前記センサ基板側に形成される前記接続パッドと前記信号処理基板側の前記層間膜との間、および、前記信号処理基板側に形成される前記接続パッドと前記センサ基板側の前記層間膜との間に形成される金属酸化膜と
     を有する固体撮像素子を備える電子機器。
PCT/JP2016/063630 2015-05-22 2016-05-06 半導体装置、製造方法、固体撮像素子、および電子機器 WO2016190059A1 (ja)

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