Classifications

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  • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
  • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
  • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
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  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
  • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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  • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
  • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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  • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
  • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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  • H01L25/162—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
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  • H01L25/165—Containers
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  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
  • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
  • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
  • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
  • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
  • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
  • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
  • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
  • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/0001—Technical content checked by a classifier
  • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/13—Discrete devices, e.g. 3 terminal devices
  • H01L2924/1304—Transistor
  • H01L2924/1305—Bipolar Junction Transistor [BJT]
  • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/13—Discrete devices, e.g. 3 terminal devices
  • H01L2924/1304—Transistor
  • H01L2924/1306—Field-effect transistor [FET]
  • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/14—Integrated circuits
  • H01L2924/141—Analog devices
  • H01L2924/1425—Converter
  • H01L2924/14252—Voltage converter
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/14—Integrated circuits
  • H01L2924/141—Analog devices
  • H01L2924/1426—Driver
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/146—Mixed devices
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
  • H01L2924/181—Encapsulation

Definitions

• the invention relates to a power module with a Leis ⁇ processing unit and a drive unit for driving the power unit.
• the invention also relates to a procedural ⁇ ren for manufacturing a power module.
• Power modules or power semiconductor modules are already known from the prior art and can be designed as power converters, for example inverters or rectifiers. Such power modules have chips, ie power semiconductor components or
• Power components such as transistors, IGBTs or diodes, which are usually arranged on a ceramic sub ⁇ strate and connected to this, for example by soldering, cohesively.
• the substrate equipped with the power components is generally arranged in a housing.
• bonds are commonly used, which are guided from a contact area of the chip to a pad on the sub ⁇ strat.
• electrical components which are electrically connected or connected by means of bonding wires, there is the disadvantage that on the one hand, the bond joints, especially in He ⁇ vibrations and thermo-mechanical loads, can easily break and on the other hand, such power modules have a very high inductance.
• An inventive power module comprises a power ⁇ unit and a drive unit for driving the Leis ⁇ processing unit.
• the power unit has a cooling body, at least a valve disposed on the heat sink hobau ⁇ element and the heat sink and the at least one processing device Leis ⁇ insulating layer covering.
• a bottom of the power unit is formed by a bottom of the heat sink and a top surface of the power unit formed by at least one, with the at least oneticianbau ⁇ element thermally and / or electrically coupled Kunststoffflä ⁇ surface and a said at least one contact surface surrounding surface of the insulating layer.
• the drive unit has at least one, to the at least one contact surface of the power unit corresponding contact element, wel ⁇ ches by arranging the control unit on top of the power unit adjacent to the at least one Needlesflä ⁇ surface of the power unit for electrically and / or thermally contacting the at least one power component is arranged.
• the power module can be designed, for example, as a power converter.
• the at least one power component which may be designed for example as a power MOSFET or as an IGBT, is on the heat sink angeord ⁇ net and with the heat sink to dissipate through the/2017in- least one power component produced during operation thermally coupled waste heat. In particular, this is connected to at least a Leis ⁇ processing device with the top of the heatsink.
• the power component surrounding area on the upper ⁇ side of the heat sink and the power component itself are from the insulating layer, in particular completely be covered ⁇ .
• the insulating layer may, for example, a
• Potting compound for example, a so-called mold compound, and / or include an insulating film.
• a connection to the at least one power component can be coupled to an electrical and / or thermal guide element.
• the electrical and / or thermal guide element can be guided through the insulating layer to the surface of the insulating layer, so that only the contact surfaces of the guide element are exposed at the top of the power unit.
• the Leit ⁇ element may, for example, copper.
• the power component is embedded in the insulating layer, wherein on the upper side of the power unit, only the surface of the insulating layer and the at least one contact surface, which is also referred to as a functional island, is visible.
• the at least one power component is fully ge ⁇ encapsulates so through the insulating layer and the heat sink.
• the at least one contact surface is located in particular at a defined position on the upper side of the power unit, in particular directly above the power component embedded in the insulating layer.
• the drive unit which has at least one Kon ⁇ clock element.
• the at least one contact element touches the contact surface of the power unit and thereby sets the thermal and / or electrical contact to the at least one power device.
• the power unit and the control unit can be united on the top of the power unit in an advantageous manner be carried out separately and walked ⁇ in a later process, for example to provide the complete power module, by arranging the drive unit.
• the power unit can be easily standardized, while the drive unit can be adapted to the respective Appli ⁇ cations.
• the power module can be made particularly inexpensive.
• the power module is particularly suitable for use without a housing. In other words signified ⁇ tet this means that the power unit and the control unit does not have to be integrated into a separate, representational housing.
• a power module with a particularly small volume and with a particularly low weight can be provided.
• the at least one contact surface and the surface of the insulating layer are arranged flush and thus formed by the surface of the insulating layer and the at least one contact surface, a flat top of the power unit.
• the top of the power unit is formed as a smooth layer of insulating layer surface and functional island.
• wel ⁇ che can be referred to as such in the context of measurement tolerances and manufacturing tolerances. Due to the flat top of the power unit, the power unit is designed particularly compact.
• the electrical connection element from ⁇ preferably an electrically conductive surface, for example a copper surface which is produced by means of a planar construction and connection process.
• a planar construction and connection process for example, one of
• the electrical connection element is likewise covered or enveloped by the insulating layer, the electrical connection element is particularly well protected from external influences, for example vibrations or environmental influences.
• the electrical connecting element may be configured examples example as a shunt resistor, a current measurement in the power module is inte grated ⁇ ⁇ that in addition.
• the technology is at least one Leis ⁇ processing component within the power unit on the upper ⁇ side of the heat sink by means of a so-called flip-chip applied.
• the flip chip is a method of packaging and interconnection technology for contacting of the at least one power component by means of so- ⁇ -called bump contact.
• the chip is directly toward ie without further connecting wires or without elekt ⁇ generic connection element, with its active contact-side or a connection downwards, so the heat sink is mounted. This leads to particularly small dimensions or dimensions and short conductor length. conditions, whereby the power module has a particularly low module ⁇ inductance.
• a preferred embodiment is arranged at least between the at least one power component and the upper surface of the cooling body ⁇ only a bonding layer for the cohesive Ver ⁇ binding of a power device to the top of the heat sink.
• Such Verbin ⁇ -making layer can be for example a solder layer or a sintered layer.
• no objective component in particular no printed circuit board or ceramic substrate, is arranged between the at least one power component and the upper side of the heat sink.
• the at least one power component can be arranged directly or directly on the upper side of the heat sink and connected by applying a stan ⁇ term pressure on the surface of the insulating layer and / or on the at least one contact surface frictionally with the top of the heat sink.
• the power component is therefore pressed onto the top side of the heat sink only by applying the constant pressure, so that a solder or sintered layer can be dispensed with.
• This pressure contact technology avoids tearing off of the power components or chips from the top of the heat sink, in particular in the case of vibrations or oscillations under operating conditions. This is insbesonde ⁇ re beneficial in high-current applications.
• an electrical contacting of the at least one power component by means of flip-chip technology that is at least one
• the at least one Kon ⁇ tact element of the drive unit is designed as a cooling element and / or as an electrical pressure contact element, where ⁇ at the pressure for non-positive connection by the cooling element and / or by the pressure contact element when arranging on the at least a contact surface for contacting the at least one power component is applied.
• a cooling element can be gege ⁇ appropriate in conjunction with a heat pipe, a so-called heat pipe, for dissipating the heat, for example, a cooling die.
• both the at least one power component may be attached in a particularly reliable and of, be implemented at ⁇ least one power device, namely via the heat sink and the cooling die a two-sided cooling.
• the insulating layer may be elastic, so that by means of thedeele ⁇ ment or a cooling structure particularly well, a mechanical pressure on the at least one power device can be exercised.
• the reliability of the power module can also be enhanced by a thermomechanical Ent ⁇ coupling.
• the press-contact member may be for example a protruding at An ⁇ control unit or inte ⁇ grated in the drive unit, preformed contact block, for example a copper block, which exerts a constant pressure on the contact surface by arranging the control unit on the power unit and the at least one legibau ⁇ element fixed very well.
• the Druckêtele ⁇ ment be configured as a spring contact element.
• the heat sink is designed as a coated with an electrically insulating, thermally conductive material cooling plate, wherein a surface of the electrically insulating, thermally conductive material ausbil ⁇ det the top of the heat sink.
• the cooling plate can be, for example, an aluminum plate which, for example, with aluminum nitride or Silicon nitride is coated as the electrically insulating, thermally conductive material.
• Aluminum nitride and silicon nitride have the advantage of a particularly high ther ⁇ mix conductivity and are therefore particularly well suited for cooling the power module.
• the electrically isolie ⁇ Rende, thermally conductive material may be applied for example as a plate, a film, or by spraying onto the cooling plate ⁇ . On this electrically insulating, thermally conductive material then, for example, the at least
• the integrated An horrein- comprises a circuit board and at least one component to at ⁇ control the at least one power component of the Leis ⁇ processing unit.
• the at least one component can ⁇ example, a driver module and / or a logic circuit and / or a control device to be.
• the at least one component of the drive unit may be ver ⁇ connected to the contact element such that the at least one component in Anord ⁇ NEN the drive unit to the power unit with the power component of the power unit, for example, for driving the at least one power component, elec ⁇ trically connected.
• the printed circuit board has at least one sensor element for detecting a physical property of the power module.
• the at least one sensor element can be, for example, a temperature sensor for measuring a temperature of the power module.
• the at least one sensor element is in particular designed to transmit the detected physical property, for example the detected temperatures, for example to a higher-level control unit.
• the circuit board has at least two layers, and the at least one component and / or a sensor element between the two layers is arranged at least at least ⁇ .
• the printed circuit board is embodied, for example, as a so-called multi-layer printed circuit board, wherein the at least one component and / or the at least one sensor element is arranged in a recess between the two layers and is thus completely enclosed by the two layers.
• the driver terminals and the load terminals for the at least one power component of the power unit can be provided. This results in the advantage that no additional effort for the production of the load connections must be operated and the unreliability associated with the manufacturing process of the load connections can be avoided.
• An advantageous embodiment of the invention provides that a first of the at least two layers is deposited directly on the upper side of the power unit and is connected to the upper side of the power unit in a material-locking manner, which comprises at least one component and / or the at least one
• Sensor element is arranged on the first layer and a second of at least two layers is deposited directly on the first layer, the second layer covers the at least one ⁇ component and / or the at least one sensor element.
• the one ⁇ individual layers can be laminated, for example, as so-called pre-preg layers.
• the drive unit in particular the printed circuit board, having at least one contact element on an underside of An horrein ⁇ uniform and at ⁇ least one contact element by arranging the control unit on top of the power unit adjacent to the at least one contact surface for electrical and / or thermal contact of the at least one power component is formed.
• the drive unit in the form of the conductor ⁇ plate can be for example a prefabricated circuit board, which is pressed for example via spring contacts or snap ⁇ connections at the top of the power unit.
• the at least one contact element may be, for example, a copper block, which is partially integrated into the printed circuit board and / or is arranged throughout over an entire thickness of the drive unit in the drive unit.
• for pressing at least one contact element can with a korres ⁇ pondierenden contact surfaces are soldered to at least and thus the control unit cohesively be locked connected to the power unit.
• the drive unit has at least one corresponding to the contact surface continuous cut which one contact surface is in arranging the drive unit on the upper side of the power unit in alignment with the at ⁇ minimum, wherein the at ⁇ least one contact member for contacting the at least one power component is arranged in the continuous recess.
• the drive unit in the form of the printed circuit board can be a prefabricated printed circuit board, which has the Ausspa ⁇ ments, in particular over a thickness of the printed circuit board on ⁇ .
• the printed circuit board is deposited in the layers directly on the surface of the insulating layer of the power unit, wherein the at least one contact surface is not covered by the layers of the printed circuit board during deposition. Otherwise ⁇ presses can remain left out of place above the at least one Maisflä ⁇ che or above the at least one power building element.
• ⁇ presses can remain left out of place above the at least one Kunststoffflä ⁇ che or above the at least one power building element.
• In order to produce a thermal and / or electrical contact can be through-contacted by the circuit board through or through the recess of the circuit board by the ⁇ least one contact element is disposed in the recess.
• a highly compact, highly integrated and intelligent power module is formed by the combination of power unit and drive unit, whose underside is formed by the bottom of the heat sink and the top is formed by an upper side of the drive unit.
• the power module may be configured for example as a cuboid-shaped ⁇ , highly compact block having, for example, only electrical drive unit at the top of and / or thermal contact elements for Mais ⁇ animals of the power unit.
• the remaining Oberflä ⁇ chen Schemee the power module are electrically isolated, so that the entire power module without a housing, for example as a power converter, is used.
• the invention also relates to a method for producing a power module having a power unit and a drive unit for driving the power unit.
• a power device is arranged on a heat sink of the power unit and the heat sink and at least ⁇ a power device with an insulating layer be ⁇ covers.
• a bottom of the power unit is formed by a bottom of the heat sink and a top the power unit formed by at least one, with the at least one power component thermally and / or electrically coupled contact surface and the at least one contact surface ⁇ surrounding surface of the insulating layer.
• At the very least one to the at least one contact surface of the Leis ⁇ processing unit corresponding contact element of the drive unit by disposing the drive unit resting on the upper ⁇ side of the power unit to the at least one contact surface of the power unit for electrically and / or thermally contacting the at least one nursebauele ⁇ Mentes arranged.
• FIG. 1 shows a schematic representation of an embodiment of a power module according to the invention
• FIG. 2 shows a schematic representation of a power unit of an embodiment of a power module according to the invention in a plan view.
• identical and functionally identical elements are provided with the same reference numerals.
• the described Kom ⁇ components of the embodiment respectively represent individual, independently of one another to be considered features of the invention which further the invention also are each independently form and thus individually or in any other than the combination shown to be considered part of the invention. Furthermore, the described embodiment can also be supplemented by further features of the invention already described.
• the power module 1 shows a power module 1 with a power unit 2 and a drive unit 3 for driving the power unit 2.
• the power module 1 can be designed, for example, as an AC / DC converter or a DC / DC converter.
• the power unit 2 comprises a heat sink 4, which has a cooling plate 5 and a cooling plate 5 covering elek ⁇ trically insulating, thermally conductive material 6 ⁇ .
• the electrically insulating, thermally conductive material 6 must in particular be provided only if the cooling plate 5 itself is made of an electrically conductive material, for example aluminum.
• the electrically insulating, thermally conductive material 6 may be ⁇ example, silicon nitride, aluminum nitride or a kar compassion- of the electrically insulating organic material, and be applied as a plate, foil, or by spraying onto the cooling plate. 5 A surface of the electrically insulating ⁇ , thermally conductive material 6 forms an upper surface 8 of the heat sink. 4
• the heat sink 4 is used here for cooling a plurality of power components 7 of the power unit 2, which may be configured for example as IGBTs or as a power transistors and which arranged on the upper side 8 of the heat sink 4 and connected to this.
• structured metal surfaces 9, 10 can be applied to the upper side 8 of the heat sink 4.
• a connecting material 11, such as solder or a sintering paste, to be applied, which directly of between the top 8 Heatsink 4 and the power devices 7 is arranged.
• a connecting material 11 such as solder or a sintering paste
• the power components 7 are arranged directly, ie without providing the connecting layer 9, 11, on the upper side 8 of the heat sink 4 and are non-positively connected with the upper side 8 of the heat sink 4 under constant pressure. Then a lot- be ⁇ relationship as sinter-free performance unit 2 can be provided.
• the metal surfaces 10 are configured, for example, as conductor tracks, with which the power components 7, wherein ⁇ game as to interconnect the power components 7 among each other, are electrically connected.
• the power components 7 may be electrically connected to the printed conductors 10, for example via electrical connection elements 13.
• the power components 7 and the top 8 of theisserkör ⁇ pers 4 are covered by an insulating layer 12.
• the insulating ⁇ layer 12 can be deposited in multiple layers and, for example, a so-called Mouldmasse, that a casting compound, and / or an insulating film.
• a metal layer are applied to the sub-layer which forms the electrical connection element 13 and thus the power components electrically connects with the Lei ⁇ terbahnen 10. 7
• the electrical connection element 13 above the power components 7, that is to say the metal surface above the power components 7, can be provided with a thin thermally conductive but not shown here electrically insulating layer are covered to allow a two-sided cooling of the power devices 7.
• a further partial layer of the insulating layer 12 is applied, which completely covers the electrical connecting elements 13 and the power components 7.
• an upper side 14 of the power unit 2 is formed by a surface 15 of the insulating layer 12 and contact surfaces 16 of the electrical connection elements 13.
• the materials of the insulating layer 12 and the electrical connection elements 13 can be filled in particular up to a Méli ⁇ chen level, so that the top 14 of the power unit 2 is designed as a flat surface.
• a lower side 17 of the power unit 2 is formed by a lower side of the heat sink 4.
• FIG. 14 A plan view of the upper side 14 of the power unit 2 is shown in FIG. It can be seen that the upper ⁇ side 14 of the power unit 2 as a flat, smooth surface having the contact surfaces 16 and the surface 15 of the insulating layer 12 is formed.
• the control unit 3 On the upper side 14 of the power unit 2, the control unit 3 is arranged, which in particular represents an electrical connection for the power unit 2.
• the check control unit 3 has to the contact surfaces 16 korrespondie ⁇ Rende contact elements 18 for electrical and / or thermal contact of the power components 7, which may be formed for example as copper blocks and / or pressure contact elements and / or spring contacts and / or cooling die.
• the contact elements 18 are arranged adjacent to the contact surfaces 16 and soldered there, for example, or pressed by spring clamps or screw 19 on the contact surfaces 16.
• the drive unit 3 may have, for example, a multilayer printed circuit board 20.
• the circuit board 20 may be a sepa rates ⁇ component, which for example via the screw Connections 19 or the spring clips to the top 14 of the power unit 2 to be pressed.
• the printed circuit board 20 is deposited in several layers directly on the upper side 14 of the power unit 2 and thus is connected to the upper side 14 of the power unit 2 in a material- tight manner.
• the individual layers of the printed circuit board can be, for example, so-called prepreg layers.
• Components 21, 22, 23 can be integrated or embedded in the printed circuit board 20.
• the component 21 may, for example, be a driver component, which may be electrically connected to the electrical connection element 13 of the power unit 2 and thus to the power component 7 via a further electrical connection element 24.
• the device 22 may for example be a Sensorele ⁇ ment, such as a temperature sensor for measuring a temperature of the power module 1,.
• the component 22 in the form of the temperature sensor can transmit the determined measured values, in this case the temperature, for example, wirelessly to a higher-level control unit.
• the device 23 may be, for example, a logic device, which is also connected via an electrical connection element 24 with the electrical ⁇ 's connecting element 13 of the power unit. 2

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• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Computer Hardware Design (AREA)
• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Chemical & Material Sciences (AREA)
• Materials Engineering (AREA)
• Manufacturing & Machinery (AREA)
• Ceramic Engineering (AREA)
• Geometry (AREA)
• Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

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• 2015
  • 2015-05-06 DE DE102015208348.9A patent/DE102015208348B3/de not_active Expired - Fee Related
• 2016
  • 2016-04-07 WO PCT/EP2016/057567 patent/WO2016177528A1/de not_active Ceased
  • 2016-04-07 CN CN201680026303.8A patent/CN107580726B/zh not_active Expired - Fee Related
  • 2016-04-07 US US15/571,829 patent/US10763244B2/en not_active Expired - Fee Related
  • 2016-04-07 EP EP16716525.7A patent/EP3271943B1/de active Active
  • 2016-04-07 JP JP2017556695A patent/JP6757742B2/ja not_active Expired - Fee Related

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