DE102015208348B3 - Leistungsmodul sowie Verfahren zum Herstellen eines Leistungsmoduls - Google Patents

Leistungsmodul sowie Verfahren zum Herstellen eines Leistungsmoduls Download PDF

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Publication number
DE102015208348B3
DE102015208348B3 DE102015208348.9A DE102015208348A DE102015208348B3 DE 102015208348 B3 DE102015208348 B3 DE 102015208348B3 DE 102015208348 A DE102015208348 A DE 102015208348A DE 102015208348 B3 DE102015208348 B3 DE 102015208348B3
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Prior art keywords
power
unit
heat sink
component
power unit
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Expired - Fee Related
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DE102015208348.9A
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German (de)
English (en)
Inventor
Karl Weidner
Kai Kriegel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
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Siemens AG
Siemens Corp
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Priority to DE102015208348.9A priority Critical patent/DE102015208348B3/de
Priority to CN201680026303.8A priority patent/CN107580726B/zh
Priority to JP2017556695A priority patent/JP6757742B2/ja
Priority to US15/571,829 priority patent/US10763244B2/en
Priority to EP16716525.7A priority patent/EP3271943B1/de
Priority to PCT/EP2016/057567 priority patent/WO2016177528A1/de
Application granted granted Critical
Publication of DE102015208348B3 publication Critical patent/DE102015208348B3/de
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73263—Layer and strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
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    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
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    • H—ELECTRICITY
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    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
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    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H01L2924/14—Integrated circuits
    • H01L2924/141—Analog devices
    • H01L2924/1425—Converter
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    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/141—Analog devices
    • H01L2924/1426—Driver
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Geometry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
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CN201680026303.8A CN107580726B (zh) 2015-05-06 2016-04-07 功率模块及功率模块的制造方法
JP2017556695A JP6757742B2 (ja) 2015-05-06 2016-04-07 パワーモジュールおよびパワーモジュールの製造方法
US15/571,829 US10763244B2 (en) 2015-05-06 2016-04-07 Power module having power device connected between heat sink and drive unit
EP16716525.7A EP3271943B1 (de) 2015-05-06 2016-04-07 Leistungsmodul sowie verfahren zum herstellen eines leistungsmoduls
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DE102022206412A1 (de) 2022-06-27 2023-12-28 Volkswagen Aktiengesellschaft Elektronikbaugruppe und Verfahren zur Herstellung einer Elektronikbaugruppe
DE102024201319A1 (de) * 2024-02-14 2024-11-28 Zf Friedrichshafen Ag Leistungshalbleitermodul mit in Treiberplatine integriertem Temperatursensor

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US11515237B2 (en) 2018-08-08 2022-11-29 Agency For Science, Technology And Research Plurality of heat sinks for a semiconductor package
EP3772087A1 (de) * 2019-07-30 2021-02-03 Siemens Aktiengesellschaft Montage einer elektronischen baugruppe
EP3926670A1 (de) * 2020-06-15 2021-12-22 Siemens Aktiengesellschaft Leistungshalbleitermodul mit zumindest einem leistungshalbleiterelement
WO2022088173A1 (en) * 2020-11-02 2022-05-05 Shenzhen Institute Of Wide-bandgap Semiconductors A power device with a spring clip

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DE102024201319A1 (de) * 2024-02-14 2024-11-28 Zf Friedrichshafen Ag Leistungshalbleitermodul mit in Treiberplatine integriertem Temperatursensor

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WO2016177528A1 (de) 2016-11-10
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