CN107580726B - 功率模块及功率模块的制造方法 - Google Patents

功率模块及功率模块的制造方法 Download PDF

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CN107580726B
CN107580726B CN201680026303.8A CN201680026303A CN107580726B CN 107580726 B CN107580726 B CN 107580726B CN 201680026303 A CN201680026303 A CN 201680026303A CN 107580726 B CN107580726 B CN 107580726B
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power
component
top side
contact
control unit
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CN107580726A (zh
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K.韦德纳
K.克里格尔
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Siemens Corp
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Siemens Corp
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    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73263—Layer and strap connectors
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
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    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
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    • H01L2924/1425—Converter
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    • H01L2924/14—Integrated circuits
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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Families Citing this family (10)

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Publication number Priority date Publication date Assignee Title
DE102015208348B3 (de) 2015-05-06 2016-09-01 Siemens Aktiengesellschaft Leistungsmodul sowie Verfahren zum Herstellen eines Leistungsmoduls
EP3131377A1 (de) * 2015-08-14 2017-02-15 Siemens Aktiengesellschaft Phasenmodul für einen stromrichter
JP6108026B1 (ja) * 2016-12-16 2017-04-05 富士電機株式会社 圧接型半導体モジュール
WO2020032871A1 (en) * 2018-08-08 2020-02-13 Agency For Science, Technology And Research Semiconductor package and method of forming the same
CN109326527B (zh) * 2018-09-27 2020-10-13 泉州智慧果技术服务有限公司 一种功率元件封装模块及其制备方法
EP3772087A1 (de) * 2019-07-30 2021-02-03 Siemens Aktiengesellschaft Montage einer elektronischen baugruppe
EP3926670A1 (de) * 2020-06-15 2021-12-22 Siemens Aktiengesellschaft Leistungshalbleitermodul mit zumindest einem leistungshalbleiterelement
WO2022088173A1 (en) * 2020-11-02 2022-05-05 Shenzhen Institute Of Wide-bandgap Semiconductors A power device with a spring clip
DE102022206412A1 (de) 2022-06-27 2023-12-28 Volkswagen Aktiengesellschaft Elektronikbaugruppe und Verfahren zur Herstellung einer Elektronikbaugruppe
DE102024201319A1 (de) * 2024-02-14 2024-11-28 Zf Friedrichshafen Ag Leistungshalbleitermodul mit in Treiberplatine integriertem Temperatursensor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6756667B2 (en) * 1998-05-15 2004-06-29 Kabushiki Kaisha Toshiba Hermetically sealed semiconductor power module and large scale module comprising the same
JP2006121861A (ja) * 2004-10-25 2006-05-11 Fuji Electric Fa Components & Systems Co Ltd 電力変換装置
CN100373998C (zh) * 2001-05-31 2008-03-05 松下电器产业株式会社 功率模块及其制造方法
CN102569286A (zh) * 2010-12-24 2012-07-11 三星电机株式会社 3d功率模块封装

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB230502A (en) 1924-03-10 1925-10-01 Bohdan Pantoflicek Improvements in and relating to quick-firing guns
JPH0965662A (ja) * 1995-08-28 1997-03-07 Fuji Electric Co Ltd パワーモジュール
JP3830860B2 (ja) * 2001-05-31 2006-10-11 松下電器産業株式会社 パワーモジュールとその製造方法
JP3890947B2 (ja) * 2001-10-17 2007-03-07 松下電器産業株式会社 高周波半導体装置
US7119437B2 (en) 2002-12-26 2006-10-10 Yamaha Hatsudoki Kabushiki Kaisha Electronic substrate, power module and motor driver
JP4385324B2 (ja) 2004-06-24 2009-12-16 富士電機システムズ株式会社 半導体モジュールおよびその製造方法
JP2006303006A (ja) * 2005-04-18 2006-11-02 Yaskawa Electric Corp パワーモジュール
US8018056B2 (en) * 2005-12-21 2011-09-13 International Rectifier Corporation Package for high power density devices
US8057094B2 (en) * 2007-11-16 2011-11-15 Infineon Technologies Ag Power semiconductor module with temperature measurement
KR101752829B1 (ko) 2010-11-26 2017-06-30 삼성전자주식회사 반도체 장치
JP6114691B2 (ja) * 2011-05-16 2017-04-12 日本碍子株式会社 大容量モジュールの周辺回路用の回路基板、及び当該回路基板を用いる周辺回路を含む大容量モジュール
JP5709739B2 (ja) 2011-12-29 2015-04-30 三菱電機株式会社 パワー半導体装置
DE102012201890A1 (de) * 2012-02-09 2013-06-27 Conti Temic Microelectronic Gmbh Elektrisches Leistungsmodul
JP2014086535A (ja) 2012-10-23 2014-05-12 Denso Corp 多層基板の放熱構造およびその製造方法
JP5975856B2 (ja) 2012-11-27 2016-08-23 三菱電機株式会社 電力用半導体装置
JP6012533B2 (ja) 2013-04-05 2016-10-25 三菱電機株式会社 電力用半導体装置
TW201539596A (zh) * 2014-04-09 2015-10-16 同欣電子工業股份有限公司 中介體及其製造方法
US10211158B2 (en) * 2014-10-31 2019-02-19 Infineon Technologies Ag Power semiconductor module having a direct copper bonded substrate and an integrated passive component, and an integrated power module
DE102015208348B3 (de) 2015-05-06 2016-09-01 Siemens Aktiengesellschaft Leistungsmodul sowie Verfahren zum Herstellen eines Leistungsmoduls

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6756667B2 (en) * 1998-05-15 2004-06-29 Kabushiki Kaisha Toshiba Hermetically sealed semiconductor power module and large scale module comprising the same
CN100373998C (zh) * 2001-05-31 2008-03-05 松下电器产业株式会社 功率模块及其制造方法
JP2006121861A (ja) * 2004-10-25 2006-05-11 Fuji Electric Fa Components & Systems Co Ltd 電力変換装置
CN102569286A (zh) * 2010-12-24 2012-07-11 三星电机株式会社 3d功率模块封装

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