JP6757742B2 - パワーモジュールおよびパワーモジュールの製造方法 - Google Patents

パワーモジュールおよびパワーモジュールの製造方法 Download PDF

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JP6757742B2
JP6757742B2 JP2017556695A JP2017556695A JP6757742B2 JP 6757742 B2 JP6757742 B2 JP 6757742B2 JP 2017556695 A JP2017556695 A JP 2017556695A JP 2017556695 A JP2017556695 A JP 2017556695A JP 6757742 B2 JP6757742 B2 JP 6757742B2
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power
contact
heat sink
unit
power unit
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Japanese (ja)
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JP2018515918A5 (enExample
JP2018515918A (ja
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ヴァイトナー、カール
クリーゲル、カイ
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Siemens AG
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Siemens AG
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
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    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
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    • H—ELECTRICITY
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    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
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    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
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    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H01L2924/14—Integrated circuits
    • H01L2924/141—Analog devices
    • H01L2924/1425—Converter
    • H01L2924/14252—Voltage converter
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    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/141—Analog devices
    • H01L2924/1426—Driver
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Power Engineering (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
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JP6108026B1 (ja) * 2016-12-16 2017-04-05 富士電機株式会社 圧接型半導体モジュール
SG11202100905XA (en) * 2018-08-08 2021-02-25 Agency Science Tech & Res Semiconductor package and method of forming the same
CN109326527B (zh) * 2018-09-27 2020-10-13 泉州智慧果技术服务有限公司 一种功率元件封装模块及其制备方法
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EP3926670A1 (de) 2020-06-15 2021-12-22 Siemens Aktiengesellschaft Leistungshalbleitermodul mit zumindest einem leistungshalbleiterelement
WO2022088173A1 (en) * 2020-11-02 2022-05-05 Shenzhen Institute Of Wide-bandgap Semiconductors A power device with a spring clip
DE102022206412A1 (de) 2022-06-27 2023-12-28 Volkswagen Aktiengesellschaft Elektronikbaugruppe und Verfahren zur Herstellung einer Elektronikbaugruppe
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US20180122782A1 (en) 2018-05-03
JP2018515918A (ja) 2018-06-14
EP3271943B1 (de) 2020-01-15
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US10763244B2 (en) 2020-09-01

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