WO2016174938A1 - ラダー型フィルタ及びデュプレクサ - Google Patents
ラダー型フィルタ及びデュプレクサ Download PDFInfo
- Publication number
- WO2016174938A1 WO2016174938A1 PCT/JP2016/057414 JP2016057414W WO2016174938A1 WO 2016174938 A1 WO2016174938 A1 WO 2016174938A1 JP 2016057414 W JP2016057414 W JP 2016057414W WO 2016174938 A1 WO2016174938 A1 WO 2016174938A1
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- Prior art keywords
- parallel arm
- arm resonator
- ladder
- parallel
- resonator
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6483—Ladder SAW filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
Definitions
- the ladder-type filter has a plurality of the second parallel arm resonators, has an input end and an output end, and the first to third parallel arm resonators are Two parallel arm resonators of the plurality of second parallel arm resonators are a parallel arm resonator located closest to the input end and a parallel arm resonator located closest to the output end.
- the impedance in the pass band is less likely to shift to capacitive. Therefore, impedance matching can be further improved.
- the third parallel arm resonator P4 is connected in parallel to the first parallel arm resonator P1, and the capacitance of the third parallel arm resonator P4 is The capacitance of the first parallel arm resonator P1 is smaller. Therefore, the influence of the capacitance of the third parallel arm resonator P4 on the impedance matching of the pass band of the ladder filter 1 is small. Therefore, impedance matching can be satisfactorily achieved and insertion loss can be reduced.
- the anti-resonance frequency of the third parallel arm resonator P4 is located outside the pass band of the ladder filter 1, an attenuation pole is generated outside the band. Therefore, the out-of-band attenuation can be increased.
- the broken line indicating the result of the first comparative example spreads greatly.
- the solid line indicating the result of the present embodiment has a small spread, and the solid line trajectory is nearly circular. Therefore, in this embodiment, it turns out that impedance matching is favorable.
- the arrangement of the second parallel arm resonator P112 and the third parallel arm resonator P114 is different from that of the first embodiment.
- the anti-resonance frequencies of the first to third parallel arm resonators P111 to P114 and the resonance frequencies of the series arm resonators S111 to S114 are also set in the first embodiment. Different from form. Except for the above points, the ladder filter 111 has the same configuration as the ladder filter 1 of the first embodiment.
- the anti-resonance frequency of the second parallel arm resonator P112 is lower than the anti-resonance frequency of the first parallel arm resonator P111. It is located in the side frequency range. Therefore, the frequency range from the antiresonance frequency of the second parallel arm resonator P112 to the resonance frequencies of the series arm resonators S111 to S114 is wide.
- a third parallel arm resonator P114 is connected in parallel to the second parallel arm resonator P112. Due to the influence of the third parallel arm resonator P114, the anti-resonance frequency of the second parallel arm resonator P112 shifts to the lower frequency range. Therefore, it becomes capacitive in a wider frequency range in the pass band. Therefore, the impedance matching of the pass band is deteriorated.
- the anti-resonance frequency of the first parallel arm resonator only needs to be located in a higher frequency range than the resonance frequency of at least one series arm resonator among the plurality of series arm resonators. .
- the frequency range from the anti-resonance frequency of the first parallel arm resonator to the resonance frequency of each series arm resonator can be narrowed. Therefore, the capacitive frequency range can be narrowed.
- the anti-resonance frequency of the first parallel arm resonator is higher than the resonance frequency of any one of the series arm resonators directly connected without any other series arm resonator. It is desirable to be located at. Thereby, the influence of capacitive can be effectively suppressed.
- the anti-resonance frequency of the first parallel arm resonator P1 is located in a higher frequency range than the resonance frequency of either the series arm resonator S2 or the series arm resonator S3. More preferably.
- the configuration of the first and second parallel arm resonators is different from that of the first embodiment. Except for the above points, the ladder filter of the third embodiment has the same configuration as the ladder filter of the first embodiment.
- the duty ratio As described above, by increasing the duty ratio, the area of the IDT electrode with respect to the size of the capacitance can be reduced. On the other hand, the spurious becomes larger as the duty ratio becomes larger than 0.5. Therefore, as in the second embodiment, it is preferable to increase the duty ratio of the IDT electrode used for the parallel arm resonator that can reduce the spurious and has a small capacitance. In the second embodiment, in addition to being able to reduce the size, good harmonic characteristics can also be obtained.
- the first parallel arm resonator In the parallel arm resonator constituting the pass band, the first parallel arm resonator is positioned closest to the output end, and the third parallel arm resonator is parallel to the first parallel arm resonator. It may be connected. Even in this case, the insertion loss can be reduced.
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
2…入力端子
3…出力端子
11…ラダー型フィルタ
20…デュプレクサ
21…ラダー型フィルタ
23…出力端子
24…端子
25…共振子
26,27…縦結合共振子型弾性波フィルタ
31,101,111,121…ラダー型フィルタ
S1~S4,S111~S114…直列腕共振子
P1,P111,P121…第1の並列腕共振子
P2,P3,P112,P113,P123…第2の並列腕共振子
P4,P104,P114,P124…第3の並列腕共振子
L1,L2…インダクタ
Claims (9)
- 所定の通過帯域を有し、直列腕共振子と、第1,第2の並列腕共振子とを備えているラダー型フィルタであって、
前記直列腕共振子の共振周波数と、前記第1,第2の並列腕共振子の反共振周波数とが前記所定の通過帯域の帯域内に位置しており、
前記第1の並列腕共振子の前記反共振周波数が、前記第2の並列腕共振子の前記反共振周波数よりも高域側の周波数域に位置しており、
前記第1の並列腕共振子に並列に接続されており、前記第1の並列腕共振子の静電容量よりも静電容量が小さく、かつ反共振周波数が前記所定の通過帯域の帯域外に位置している第3の並列腕共振子をさらに備える、ラダー型フィルタ。 - 前記第1の並列腕共振子の前記反共振周波数が、前記第1の並列腕共振子に他の直列腕共振子を介すことなく直接接続されている少なくとも1個の前記直列腕共振子の前記共振周波数よりも高域側の周波数域に位置している、請求項1に記載のラダー型フィルタ。
- 前記第2の並列腕共振子を複数有し、入力端及び出力端を有し、
前記第1~第3の並列腕共振子において、前記複数の第2の並列腕共振子の内の2個の並列腕共振子が、最も前記入力端側に位置する並列腕共振子及び最も前記出力端側に位置する並列腕共振子である、請求項1または2に記載のラダー型フィルタ。 - 前記第1,第2の並列腕共振子の静電容量よりも前記第3の並列腕共振子の静電容量の方が小さい、請求項1~3のいずれか1項に記載のラダー型フィルタ。
- 前記第3の並列腕共振子の前記反共振周波数が、前記直列腕共振子と前記第1,第2の並列腕共振子とにより構成されている通過帯域よりも高域側の周波数域に位置している、請求項1~4のいずれか1項に記載のラダー型フィルタ。
- 前記第3の並列腕共振子の前記反共振周波数が、前記直列腕共振子と前記第1,第2の並列腕共振子とにより構成されている通過帯域よりも低域側の周波数域に位置している、請求項1~4のいずれか1項に記載のラダー型フィルタ。
- 前記第1~第3の並列腕共振子が、弾性表面波共振子からなり、
前記第1,第2の並列腕共振子の静電容量よりも前記第3の並列腕共振子の静電容量の方が小さく、かつ前記第1,第2の並列腕共振子のデューティー比よりも前記第3の並列腕共振子のデューティー比の方が大きい、請求項1~6のいずれか1項に記載のラダー型フィルタ。 - 請求項1~7のいずれか1項に記載されているラダー型フィルタを備える、デュプレクサ。
- 前記ラダー型フィルタが送信フィルタである、請求項8に記載のデュプレクサ。
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016547961A JP6024863B1 (ja) | 2015-04-30 | 2016-03-09 | ラダー型フィルタ及びデュプレクサ |
| DE112016001952.1T DE112016001952B4 (de) | 2015-04-30 | 2016-03-09 | Kettenfilter und Duplexer |
| CN201680009485.8A CN107210731B (zh) | 2015-04-30 | 2016-03-09 | 梯子型滤波器及双工器 |
| US15/710,857 US10236861B2 (en) | 2015-04-30 | 2017-09-21 | Ladder filter and duplexer |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015092801 | 2015-04-30 | ||
| JP2015-092801 | 2015-04-30 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US15/710,857 Continuation US10236861B2 (en) | 2015-04-30 | 2017-09-21 | Ladder filter and duplexer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2016174938A1 true WO2016174938A1 (ja) | 2016-11-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| PCT/JP2016/057414 Ceased WO2016174938A1 (ja) | 2015-04-30 | 2016-03-09 | ラダー型フィルタ及びデュプレクサ |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10236861B2 (ja) |
| JP (1) | JP6024863B1 (ja) |
| CN (1) | CN107210731B (ja) |
| DE (1) | DE112016001952B4 (ja) |
| WO (1) | WO2016174938A1 (ja) |
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| WO2019117106A1 (ja) * | 2017-12-13 | 2019-06-20 | 株式会社村田製作所 | フィルタ装置およびマルチプレクサ |
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| JP2020182244A (ja) * | 2017-03-31 | 2020-11-05 | 株式会社村田製作所 | 複合フィルタ装置 |
| JP2022135890A (ja) * | 2021-03-05 | 2022-09-15 | 三安ジャパンテクノロジー株式会社 | 弾性波デバイスチップ、弾性波デバイスおよびその弾性波デバイスチップまたは弾性波デバイスを備えるモジュール |
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Also Published As
| Publication number | Publication date |
|---|---|
| US20180013405A1 (en) | 2018-01-11 |
| CN107210731B (zh) | 2020-08-21 |
| JPWO2016174938A1 (ja) | 2017-05-18 |
| US10236861B2 (en) | 2019-03-19 |
| JP6024863B1 (ja) | 2016-11-16 |
| DE112016001952T5 (de) | 2018-01-18 |
| DE112016001952B4 (de) | 2023-09-14 |
| CN107210731A (zh) | 2017-09-26 |
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