WO2016119303A1 - 阵列基板及该阵列基板的断线修补方法 - Google Patents

阵列基板及该阵列基板的断线修补方法 Download PDF

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WO2016119303A1
WO2016119303A1 PCT/CN2015/075674 CN2015075674W WO2016119303A1 WO 2016119303 A1 WO2016119303 A1 WO 2016119303A1 CN 2015075674 W CN2015075674 W CN 2015075674W WO 2016119303 A1 WO2016119303 A1 WO 2016119303A1
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layer
source
passivation layer
array substrate
drain data
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English (en)
French (fr)
Inventor
李珊
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to JP2017538679A priority Critical patent/JP6518330B2/ja
Priority to KR1020177012280A priority patent/KR101947295B1/ko
Priority to US14/781,593 priority patent/US9568793B2/en
Priority to GB1706052.6A priority patent/GB2546043B/en
Publication of WO2016119303A1 publication Critical patent/WO2016119303A1/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136263—Line defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an array substrate and a wire break repair method of the array substrate.
  • LCDs liquid crystal displays
  • Various consumer electronic products such as digital assistants, digital cameras, notebook computers, and desktop computers have become mainstream in display devices.
  • liquid crystal displays which include a casing, a liquid crystal display panel disposed in the casing, and a backlight module disposed in the casing.
  • the liquid crystal display panel is the main component of the liquid crystal display, but the liquid crystal display panel itself does not emit light, and the light source provided by the backlight module needs to be used to display the image normally.
  • a liquid crystal display panel is formed by laminating two glass substrates, and liquid crystal is poured between two glass substrates, and pixel electrodes and common electrode lines are respectively disposed on opposite sides of the two glass substrates, and liquid crystal is controlled by energization or not.
  • the molecules change direction and refract the light from the backlight module to produce a picture.
  • the pixel electrode voltage of the liquid crystal is mainly controlled by a Thin Film Transistor (TFT) switch.
  • TFT Thin Film Transistor
  • the data line width of the image signal is narrow, and the wire breakage is likely to occur during the manufacturing process, and the laser is required to perform the wire break repair action.
  • an organic layer such as a color resist layer or a flat layer is usually formed on the array substrate of the liquid crystal panel.
  • An object of the present invention is to provide an array substrate by which a via hole is reserved on an organic layer corresponding to a intersection of a source-drain data line and a common electrode line, and the second passivation layer is deposited on the via hole. Opening, as a laser welding point when the wire is repaired.
  • Another object of the present invention is to provide a method for repairing a broken line of an array substrate, which can reduce the process of removing the organic layer, improve the repairing efficiency of the broken wire, reduce the amount of laser loss, and smoothly contact the interface when performing laser welding.
  • the success rate of wire break repair is to provide a method for repairing a broken line of an array substrate, which can reduce the process of removing the organic layer, improve the repairing efficiency of the broken wire, reduce the amount of laser loss, and smoothly contact the interface when performing laser welding.
  • the present invention provides an array substrate, comprising: a substrate, a gate scan line and a common electrode line disposed on the substrate, a gate insulating layer disposed on the gate scan line and the common electrode line, a source and drain data line disposed on the gate insulating layer, a first passivation layer disposed on the source and drain data lines, an organic layer disposed on the first passivation layer, and an organic layer disposed on the first passivation layer The organic layer and the second passivation layer on the first passivation layer;
  • the common electrode line includes a plurality of closed loops and a plurality of connecting lines, wherein the plurality of closed loops are connected by a plurality of connecting lines, the closed loops are disposed to intersect with the source and drain data lines, and the organic layer corresponds to Each of the intersections is provided with a through hole, and the second passivation layer is deposited at the through hole to form an opening, and the opening is used as a laser fusion point when the source and drain data lines are disconnected.
  • the size of the opening was 7 ⁇ m ⁇ 7 ⁇ m.
  • the organic layer is a color resist layer or a flat layer.
  • the material of the first passivation layer and the second passivation layer is an inorganic material.
  • the thickness of the organic layer is greater than the thickness of the first passivation layer and the second passivation layer.
  • the present invention also provides an array substrate, comprising: a substrate, a gate scan line and a common electrode line disposed on the substrate, and a gate insulating layer disposed on the gate scan line and the common electrode line; a source and drain data line on the gate insulating layer, a first passivation layer disposed on the source and drain data lines, an organic layer disposed on the first passivation layer, and an organic layer disposed on the organic layer And a second passivation layer on the first passivation layer;
  • the common electrode line includes a plurality of closed loops and a plurality of connecting lines, wherein the plurality of closed loops are connected by a plurality of connecting lines, the closed loops are disposed to intersect with the source and drain data lines, and the organic layer corresponds to Each of the intersections is provided with a through hole, and the second passivation layer is deposited at the through hole to form an opening, and the opening is used as a laser fusion point when the source and drain data lines are disconnected;
  • the size of the opening is 7 ⁇ m ⁇ 7 ⁇ m;
  • the organic layer is a color resist layer or a flat layer.
  • the invention also provides a method for repairing a wire breakage of an array substrate, comprising the following steps:
  • Step 1 providing an array substrate, the array substrate comprising: a substrate, a gate scan line and a common electrode line disposed on the substrate, a gate insulating layer disposed on the gate scan line and the common electrode line, and a source and drain data line on the gate insulating layer, a first passivation layer disposed on the source and drain data lines, an organic layer disposed on the first passivation layer, and an interface The organic layer and the second passivation layer on the first passivation layer;
  • the common electrode line includes a plurality of closed loops and a plurality of connecting lines, and the plurality of closed loops are a plurality of connecting lines are connected together, the closed ring is disposed at a crossover of the source and drain data lines, and a corresponding hole is formed in the organic layer, and the second passivation layer is deposited at the through hole. Opening, the opening is used as a laser fusion point when the source and drain data lines are disconnected;
  • Step 2 detecting the position of the disconnection of the source and drain data lines, performing laser welding on the openings at both ends of the disconnection, and overlapping the source and drain data lines with the closed loop of the common electrode line;
  • Step 3 The connection lines on both sides of the closed loop of the common electrode line are cut by laser, and the disconnected line of the source and drain data lines is replaced by the closed loop of the common electrode line to realize the disconnection repair of the source and drain data lines.
  • the size of the opening is 7 ⁇ m ⁇ 7 ⁇ m.
  • the organic layer is a color resist layer or a flat layer.
  • the materials of the first passivation layer and the second passivation layer are inorganic materials.
  • the thickness of the organic layer is greater than the thickness of the first passivation layer and the second passivation layer.
  • the beneficial effects of the present invention the array substrate of the present invention and the method for repairing the disconnection of the array substrate, wherein a through hole is reserved on the organic layer corresponding to the intersection of the source and drain data lines and the common electrode line, the second A passivation layer is deposited on the through hole to form an opening as a laser fusion point when the wire is repaired.
  • the disconnection position of the source and drain data lines is detected, the two ends of the source and drain data lines are broken.
  • Laser welding is performed at the opening, the source and drain data lines are overlapped with the closed loop of the common electrode line, and the connecting lines on both sides of the closed ring on the common electrode line are cut by laser, and the source and drain are repaired by the closed loop of the common electrode line.
  • the disconnection portion of the polar data line since the organic layer having a large thickness is not disposed above the source and drain data lines at the opening, the process of removing the organic layer by laser is reduced when the wire is repaired, and the existing process is solved.
  • the laser energy consumption is large and takes a long time. After the organic layer is removed by laser, the contact surface is uneven, which may easily lead to poor contact, which directly affects the yield of the product, effectively Repair of broken high efficiency and success rate.
  • FIG. 1 is a schematic structural view of an array substrate of the present invention
  • FIG. 2 is a cross-sectional view taken along line A-A of the opening 5 of the array substrate shown in FIG. 1;
  • FIG. 3 is a schematic view of a method for repairing a broken line of an array substrate according to the present invention.
  • FIG 4 is a cross-sectional view showing the step 2 of the wire break repairing method of the array substrate of the present invention.
  • the present invention firstly provides an array substrate, comprising: a substrate 10 , a gate scan line 4 disposed on the substrate 10 , and a common electrode line 2 disposed on the gate scan line 4 and sharing a gate insulating layer 7 on the electrode line 2, a source and drain data line 1 provided on the gate insulating layer 7, and a first passivation layer 8 provided on the source/drain data line 1
  • the organic layer 6 on the first passivation layer 8, and the second passivation layer 9 disposed on the organic layer 6 and the first passivation layer 8;
  • the common electrode line 2 includes a plurality of closed loops 21 and a plurality of connecting lines 22 connected by a plurality of connecting lines 22, the closed loop 21 and the source and drain data lines. 1 intersecting, the organic layer 6 is provided with a through hole corresponding to each intersection, and the second passivation layer 9 is deposited at the through hole to form an opening 5 for the source and drain data lines. 1 When the wire is broken, as the laser welding spot, the source and drain data lines 1 and the closed ring 21 of the common electrode line 2 are connected.
  • the size of the opening 5 is 7 ⁇ m ⁇ 7 ⁇ m.
  • the organic layer 6 is a color resist layer or a flat layer; the materials of the first passivation layer 8 and the second passivation layer 9 are inorganic materials; the thickness of the organic layer 6 is greater than the first blunt The thickness of the layer 8 and the second passivation layer 9.
  • a via hole is reserved on the corresponding organic layer 6 at the intersection of the source and drain data lines 1 and the common electrode line 2, and the second passivation layer 9 is deposited at the through hole to form an opening 5 as a wire break repair.
  • the process of removing the organic layer 6 by laser is reduced when the wire is repaired, and the solution is solved.
  • the laser energy consumes a large amount of energy and takes a long time. After the organic layer 6 is removed by laser, the contact surface is uneven, which may easily lead to poor contact, thereby directly affecting the yield of the product, and effectively improving the efficiency of the wire break repair. Success rate.
  • the present invention further provides a method for repairing a wire breakage of an array substrate, comprising the following steps:
  • Step 1 An array substrate is provided.
  • the array substrate includes a substrate 10 , a gate scan line 4 disposed on the substrate 10 , and a common electrode line 2 disposed on the gate scan line 4 and the common electrode line 2 .
  • the common electrode line 2 includes a plurality of closed loops 21 and a plurality of connecting lines 22 connected by a plurality of connecting lines 22, the closed loop 21 and the source and drain data lines. 1 intersecting, the organic layer 6 is provided with a through hole corresponding to each intersection, and the second passivation layer 9 is deposited at the through hole to form an opening 5 for the source and drain data lines. 1 When the line is broken, as the laser welding point, the source and drain data lines 1 and the common electrode line 2 are connected.
  • the size of the opening 5 is 7 ⁇ m ⁇ 7 ⁇ m.
  • the organic layer 6 is a color resist layer or a flat layer; the materials of the first passivation layer 8 and the second passivation layer 9 are inorganic materials; the thickness of the organic layer 6 is greater than the first blunt The thickness of the layer 8 and the second passivation layer 9.
  • Step 2 detecting the position where the source and drain data lines 1 are disconnected, performing laser welding on the openings 5 at both ends of the disconnection, and overlapping the source and drain data lines 1 and the closed ring 21 of the common electrode line 2 to achieve The broken source and drain data lines are repaired as continuous source and drain data lines.
  • Step 3 The connection line 22 on both sides of the closed loop 21 of the common electrode line 2 is cut by laser, the cutting position is at the position 20 shown in FIG. 3, and the source and drain data lines 1 are replaced by the closed loop 21 of the common electrode line 2.
  • the disconnection portion 11 realizes the disconnection repair of the source-drain data line 1, and the data signal is transmitted through the new source-drain data line composed of the unbroken portion of the source-drain data line and the closed loop 21, and is cut off
  • the connecting lines 22 on both sides of the closed loop 21 ensure that the signal transmission path of the new source and drain data lines after repair is the same as the design path, and does not interfere with other signals.
  • the method for repairing the disconnection of the array substrate can be used for IPS (In-Plane Switching), FFS (Fringe Field Switching), and COA (Color Filter On Array). Broken wire repair of the LCD panel.
  • the source-drain data line 1 and the closed-loop 21 of the common electrode line 2 are overlapped by laser welding at the openings 5 at both ends of the source-drain data line 1 at the broken line.
  • the connecting lines 22 on both sides of the closed loop 21 on the common electrode line 2 are cut by laser, and the broken portion of the source and drain data lines 1 is repaired by the closed loop 21 of the common electrode line 2;
  • the organic layer 6 having a large thickness is not disposed above the pole data line 1, thereby reducing the process of removing the organic layer 6 by the laser during the repair of the disconnection, and solving the energy consumption of the laser energy in the existing process is long and takes a long time.
  • the contact surface is uneven, which may easily lead to poor contact, thereby directly affecting the yield of the product, and effectively improving the efficiency and success rate of the wire repair.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)

Abstract

一种阵列基板及该阵列基板的断线修补方法，通过在源漏极数据线(1)与共用电极线(2)交叉点处对应的有机层(6)上预留一通孔，第二钝化层(9)沉积于该通孔处形成开口，作为断线修补时的镭射熔接点，当检测到所述源漏极数据线(1)的断线位置后，通过在源漏极数据线(1)断线处两端的开口处进行镭射熔接，将源漏极数据线(1)和共用电极线(2)的封闭环搭接，同时将共用电极线(2)上封闭环两侧的连接线路用镭射进行切断，利用共用电极线(2)的封闭环修复源漏极数据线(1)的断线部分；由于所述开口处源漏极数据线(1)上方未设置厚度较大的有机层，从而在进行断线修补时，减少了镭射去除有机层的工序，有效地提高断线修补的效率及成功率。

Description

阵列基板及该阵列基板的断线修补方法 技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板及该阵列基板的断线修补方法。
背景技术
随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
现有市场上的液晶显示器大部分为背光型液晶显示器，其包括壳体、设于壳体内的液晶显示面板及设于壳体内的背光模组。液晶显示面板是液晶显示器的主要组件，但液晶显示面板本身不发光，需要借由背光模组提供的光源来正常显示影像。
通常液晶显示面板由两片玻璃基板贴合而成，且在两片玻璃基板之间灌入液晶，分别在两片玻璃基板的相对内侧设置像素电极、共用电极线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。
在液晶面板中，液晶的像素电极电压主要是通过薄膜晶体管(Thin Film Transistor，TFT)开关进行控制的。在TFT开关组件中，尤其是超高分辨率的液晶面板，提供图像信号的数据线线宽很窄，在制造工艺过程中容易发生断线，需要采用激光进行断线修补动作。在广视角的液晶面板技术上，为了提高开开口率及液晶的响应速度，通常会在液晶面板的阵列基板上制作有机层如色阻层或平坦层。当数据线产生断线缺陷时，由于有机层的厚度较大，无法直接进行断线修补，需要先用一种镭射进行去除有机层动作，然后再进行熔接补线动作。因此，镭射能量能耗大，耗费时间长，采用镭射去除后接触面凹凸不平，容易导致接触不良，进而直接影响产品的良率。
发明内容
本发明的目的在于提供一种阵列基板，通过在位于源漏极数据线与共用电极线交叉点处对应的有机层上预留一通孔，所述第二钝化层沉积于该通孔处形成开口，作为断线修补时的镭射熔接点。
本发明的目的还在于提供一种阵列基板的断线修补方法，能够减少去除有机层的工序，提高断线的修补效率，减少镭射损耗量，且进行镭射熔接时，接触界面平缓，有效地提高断线修补成功率。
为实现上述目的，本发明提供一种阵列基板，包括：基板、设于基板上的栅极扫描线与共用电极线、设于所述栅极扫描线与共用电极线上的栅极绝缘层、设于所述栅极绝缘层上的源漏极数据线、设于所述源漏极数据线上的第一钝化层、设于所述第一钝化层上的有机层、及设于所述有机层及第一钝化层上的第二钝化层；
所述共用电极线包括数个封闭环与数条连接线路，所述数个封闭环由数条连接线路连接在一起，所述封闭环与源漏极数据线交叉设置，所述有机层上对应每一交叉点设有一通孔，所述第二钝化层沉积于该通孔处形成开口，所述开口用于在源漏极数据线断线时作为镭射熔接点。
所述开口的大小为7μm×7μm。
所述有机层为色阻层或平坦层。
所述第一钝化层和第二钝化层的材料为无机材料。
所述有机层的厚度大于所述第一钝化层和第二钝化层的厚度。
本发明还提供一种阵列基板，包括：基板、设于基板上的栅极扫描线与共用电极线、设于所述栅极扫描线与共用电极线上的栅极绝缘层、设于所述栅极绝缘层上的源漏极数据线、设于所述源漏极数据线上的第一钝化层、设于所述第一钝化层上的有机层、及设于所述有机层及第一钝化层上的第二钝化层；
所述共用电极线包括数个封闭环与数条连接线路，所述数个封闭环由数条连接线路连接在一起，所述封闭环与源漏极数据线交叉设置，所述有机层上对应每一交叉点设有一通孔，所述第二钝化层沉积于该通孔处形成开口，所述开口用于在源漏极数据线断线时作为镭射熔接点；
其中，所述开口的大小为7μm×7μm；
其中，所述有机层为色阻层或平坦层。
本发明还提供一种阵列基板的断线修补方法，包括如下步骤：
步骤1、提供一阵列基板，所述阵列基板包括：基板、设于基板上的栅极扫描线与共用电极线、设于所述栅极扫描线与共用电极线上的栅极绝缘层、设于所述栅极绝缘层上的源漏极数据线、设于所述源漏极数据线上的第一钝化层、设于所述第一钝化层上的有机层、及设于所述有机层及第一钝化层上的第二钝化层；
所述共用电极线包括数个封闭环与数条连接线路，所述数个封闭环由 数条连接线路连接在一起，所述封闭环与源漏极数据线交叉设置，所述有机层上对应每一交叉点设有一通孔，所述第二钝化层沉积于该通孔处形成开口，所述开口用于在源漏极数据线断线时作为镭射熔接点；
步骤2、检测源漏极数据线断线的位置，对断线处两端的开口处进行镭射熔接，将源漏极数据线和共用电极线的封闭环搭接；
步骤3、将共用电极线的封闭环两侧的连接线路用镭射进行切断，利用共用电极线的封闭环取代源漏极数据线的断线部分，实现源漏极数据线的断线修复。
所述步骤1中，所述开口的大小为7μm×7μm。
所述步骤1中，所述有机层为色阻层或平坦层。
所述步骤1中，所述第一钝化层和第二钝化层的材料为无机材料。
所述步骤1中，所述有机层的厚度大于所述第一钝化层和第二钝化层的厚度。
本发明的有益效果：本发明的阵列基板及该阵列基板的断线修补方法，通过在位于源漏极数据线与共用电极线交叉点处对应的有机层上预留一通孔，所述第二钝化层沉积于该通孔处形成开口，作为断线修补时的镭射熔接点，当检测到所述源漏极数据线的断线位置后，通过在源漏极数据线断线处两端的开口处进行镭射熔接，将源漏极数据线和共用电极线的封闭环搭接，同时将共用电极线上封闭环两侧的连接线路用镭射进行切断，利用共用电极线的封闭环修复源漏极数据线的断线部分；由于所述开口处源漏极数据线上方未设置厚度较大的有机层，从而在进行断线修补时，减少了镭射去除有机层的工序，解决了现有制程中镭射能量能耗大，耗费时间长，采用镭射去除有机层后接触面凹凸不平，容易导致接触不良，进而直接影响产品的良率的问题，有效地提高断线修补的效率及成功率。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的阵列基板的的结构示意图；
图2为图1所示的阵列基板开口5处沿A-A线的剖面图；
图3为本发明的阵列基板的断线修补方法的示意图；
图4为本发明的阵列基板的断线修补方法步骤2的剖面示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1、图2，本发明首先提供一种阵列基板，包括：基板10、设于基板10上的栅极扫描线4与共用电极线2、设于所述栅极扫描线4与共用电极线2上的栅极绝缘层7、设于所述栅极绝缘层7上的源漏极数据线1、设于所述源漏极数据线1上的第一钝化层8、设于所述第一钝化层8上的有机层6、及设于所述有机层6及第一钝化层8上的第二钝化层9；
具体的，所述共用电极线2包括数个封闭环21与数条连接线路22，所述数个封闭环21由数条连接线路22连接在一起，所述封闭环21与源漏极数据线1交叉设置，所述有机层6上对应每一交叉点设有一通孔，所述第二钝化层9沉积于该通孔处形成开口5，所述开口5用于在源漏极数据线1断线时作为镭射熔接点，连接源漏极数据线1与共用电极线2的封闭环21。
优选的，所述开口5的大小为7μm×7μm。
具体的，所述有机层6为色阻层或平坦层；所述第一钝化层8和第二钝化层9的材料为无机材料；所述有机层6的厚度大于所述第一钝化层8和第二钝化层9的厚度。
通过在源漏极数据线1与共用电极线2交叉点处对应的有机层6上预留一通孔，所述第二钝化层9沉积于该通孔处形成开口5，作为断线修补时的镭射熔接点，由于在开口5处，所述源漏极数据线1上方未设置厚度较大的有机层6，从而在进行断线修补时，减少了镭射去除有机层6的工序，解决了现有制程中镭射能量能耗大，耗费时间长，采用镭射去除有机层6后接触面凹凸不平，容易导致接触不良，进而直接影响产品的良率的问题，有效地提高断线修补的效率及成功率。
请参阅图3、图4，本发明还提供一种阵列基板的断线修补方法，包括如下步骤：
步骤1、提供一阵列基板，所述阵列基板包括：基板10、设于基板10上的栅极扫描线4与共用电极线2、设于所述栅极扫描线4与共用电极线2上的栅极绝缘层7、设于所述栅极绝缘层7上的源漏极数据线1、设于所述源漏极数据线1上的第一钝化层8、及设于所述第一钝化层8上的有机层6、设于所述有机层6及第一钝化层8上的第二钝化层9；
具体的，所述共用电极线2包括数个封闭环21与数条连接线路22，所述数个封闭环21由数条连接线路22连接在一起，所述封闭环21与源漏极数据线1交叉设置，所述有机层6上对应每一交叉点设有一通孔，所述第二钝化层9沉积于该通孔处形成开口5，所述开口5用于在源漏极数据线1断线时作为镭射熔接点，连接源漏极数据线1与共用电极线2。
优选的，所述开口5的大小为7μm×7μm。
具体的，所述有机层6为色阻层或平坦层；所述第一钝化层8和第二钝化层9的材料为无机材料；所述有机层6的厚度大于所述第一钝化层8和第二钝化层9的厚度。
步骤2、检测源漏极数据线1断线的位置，对断线处两端的开口5处进行镭射熔接，将源漏极数据线1和共用电极线2的封闭环21搭接，以实现将断线的源漏极数据线修复为连续的源漏极数据线。
步骤3、将共用电极线2的封闭环21两侧的连接线路22用镭射进行切断，切断位置如图3所示的位置20，利用共用电极线2的封闭环21取代源漏极数据线1的断线部分11，实现源漏极数据线1的断线修复，数据信号通过由源漏极数据线的未断线部分及封闭环21组成的新的源漏极数据线传递，且由于切断了封闭环21两侧的连接线路22，保证了修复后新的源漏极数据线的信号传递路径与设计路径相同，不会干扰其他信号。
所述阵列基板的断线修补方法可用于IPS(In-Plane Switching，平面转换)型、FFS(Fringe Field Switching，边缘场开关技术)型、及COA(Color Filter On Array，色彩滤镜矩阵)型液晶面板的断线修补。
本发明的阵列基板的断线修补方法，通过在源漏极数据线1断线处两端的开口5处进行镭射熔接，将源漏极数据线1和共用电极线2的封闭环21搭接，同时将共用电极线2上封闭环21两侧的连接线路22用镭射进行切断，利用共用电极线2的封闭环21修复源漏极数据线1的断线部分；由于所述开口5处源漏极数据线1上方未设置厚度较大的有机层6，从而在进行断线修补时，减少了镭射去除有机层6的工序，解决了现有制程中镭射能量能耗大，耗费时间长，采用镭射去除有机层6后接触面凹凸不平，容易导致接触不良，进而直接影响产品的良率的问题，有效地提高断线修补的效率及成功率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (13)

  1. 一种阵列基板，包括：基板、设于基板上的栅极扫描线与共用电极线、设于所述栅极扫描线与共用电极线上的栅极绝缘层、设于所述栅极绝缘层上的源漏极数据线、设于所述源漏极数据线上的第一钝化层、设于所述第一钝化层上的有机层、及设于所述有机层及第一钝化层上的第二钝化层；
    所述共用电极线包括数个封闭环与数条连接线路，所述数个封闭环由数条连接线路连接在一起，所述封闭环与源漏极数据线交叉设置，所述有机层上对应每一交叉点设有一通孔，所述第二钝化层沉积于该通孔处形成开口，所述开口用于在源漏极数据线断线时作为镭射熔接点。
  2. 如权利要求1所述的阵列基板，其中，所述开口的大小为7μm×7μm。
  3. 如权利要求1所述的阵列基板，其中，所述有机层为色阻层或平坦层。
  4. 如权利要求1所述的阵列基板，其中，所述第一钝化层和第二钝化层的材料为无机材料。
  5. 如权利要求1所述的阵列基板，其中，所述有机层的厚度大于所述第一钝化层和第二钝化层的厚度。
  6. 一种阵列基板，包括：基板、设于基板上的栅极扫描线与共用电极线、设于所述栅极扫描线与共用电极线上的栅极绝缘层、设于所述栅极绝缘层上的源漏极数据线、设于所述源漏极数据线上的第一钝化层、设于所述第一钝化层上的有机层、及设于所述有机层及第一钝化层上的第二钝化层；
    所述共用电极线包括数个封闭环与数条连接线路，所述数个封闭环由数条连接线路连接在一起，所述封闭环与源漏极数据线交叉设置，所述有机层上对应每一交叉点设有一通孔，所述第二钝化层沉积于该通孔处形成开口，所述开口用于在源漏极数据线断线时作为镭射熔接点；
    其中，所述开口的大小为7μm×7μm；
    其中，所述有机层为色阻层或平坦层。
  7. 如权利要求6所述的阵列基板，其中，所述第一钝化层和第二钝化层的材料为无机材料。
  8. 如权利要求6所述的阵列基板，其中，所述有机层的厚度大于所述 第一钝化层和第二钝化层的厚度。
  9. 一种阵列基板的断线修补方法，包括如下步骤：
    步骤1、提供一阵列基板，所述阵列基板包括：基板、设于基板上的栅极扫描线与共用电极线、设于所述栅极扫描线与共用电极线上的栅极绝缘层、设于所述栅极绝缘层上的源漏极数据线、设于所述源漏极数据线上的第一钝化层、设于所述第一钝化层上的有机层、及设于所述有机层及第一钝化层上的第二钝化层；
    所述共用电极线包括数个封闭环与数条连接线路，所述数个封闭环由数条连接线路连接在一起，所述封闭环与源漏极数据线交叉设置，所述有机层上对应每一交叉点设有一通孔，所述第二钝化层沉积于该通孔处形成开口，所述开口用于在源漏极数据线断线时作为镭射熔接点；
    步骤2、检测源漏极数据线断线的位置，对断线处两端的开口处进行镭射熔接，将源漏极数据线和共用电极线的封闭环搭接；
    步骤3、将共用电极线的封闭环两侧的连接线路用镭射进行切断，利用共用电极线的封闭环取代源漏极数据线的断线部分，实现源漏极数据线的断线修复。
  10. 如权利要求9所述的阵列基板的断线修补方法，其中，所述步骤1中，所述开口的大小为7μm×7μm。
  11. 如权利要求9所述的阵列基板的断线修补方法，其中，所述步骤1中，所述有机层为色阻层或平坦层。
  12. 如权利要求9所述的阵列基板的断线修补方法，其中，所述步骤1中，所述第一钝化层和第二钝化层的材料为无机材料。
  13. 如权利要求9所述的阵列基板的断线修补方法，其中，所述步骤1中，所述有机层的厚度大于所述第一钝化层和第二钝化层的厚度。
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