JP2018508818A - 配列基板及びその配列基板の断線補修方法 - Google Patents
配列基板及びその配列基板の断線補修方法 Download PDFInfo
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- 238000002161 passivation Methods 0.000 claims abstract description 74
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136263—Line defects
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Abstract
Description
2 共通電極線
4 ゲート電極走査線
5 開口部
6 有機層
7 ゲート電極絶縁層
8 第一不動態化層
9 第二不動態化層
10 基板
11 断線部分
20 切断箇所
21 クローズドループ
22 連結回路
Claims (13)
- 基板と、基板上に設けられたゲート電極走査線及び共通電極線と、前記ゲート電極走査線及び共通電極線に設けられたゲート電極絶縁層と、前記ゲート電極絶縁層に設けられたソースドレイン電極データ線と、前記ソースドレイン電極データ線に設けられた第一不動態化層と、前記第一不動態化層に設けられた有機層と、前記有機層及び第一不動態化層に設けられた第二不動態化層と、からなる配列基板であって、
前記共通電極線は複数個のクローズドループと複数本の連結回路からなり、
前記複数個のクローズドループは複数本の連結回路によって連結され、
前記クローズドループとソースドレイン電極データ線は交差して設けられ、
前記有機層に対応する交差点ごとに一つの通り穴が設けられ、
前記第二不動態化層における通り穴に堆積している箇所は開口部を形成し、
前記開口部はソースドレイン電極データ線が断線したときにレーザーの熔接点とする
ことを特徴とする配列基板。 - 前記開口部の大きさは7μm×7μmである
ことを特徴とする請求項1に記載の配列基板。 - 前記有機層は色レジスト層または平坦層である
ことを特徴とする請求項1に記載の配列基板。 - 前記第一不動態化層と第二不動態化層は無機材料からなる
ことを特徴とする、請求項1に記載の配列基板。 - 前記有機層の厚さは前記第一不動態化層と第二不動態化層の厚さより厚い
ことを特徴とする請求項1に記載の配列基板。 - 基板と、基板に設けられたゲート電極走査線及び共通電極線と、前記ゲート電極走査線及び共通電極線設けられたゲート電極絶縁層と、前記ゲート電極絶縁層に設けられたソースドレイン電極データ線と、前記ソースドレイン電極データ線に設けられた第一不動態化層と、前記第一不動態化層に設けられた有機層と、前記有機層及び第一不動態化層に設けられた第二不動態化層と、からなる配列基板であって、
前記共通電極線は複数個のクローズドループと複数本の連結回路からなり、
前記複数個のクローズドループは複数本の連結回路によって連結され、
前記クローズドループ及びソースドレイン電極データ線は交差して設けられ、
前記有機層に対応する交差点ごとに一つの通り穴が設けられ、
前記第二不動態化層における通り穴に堆積している箇所は開口部を形成し、
前記開口部はソースドレイン電極データ線が断線したときにレーザーの熔接点とし、
前記開口部の大きさは7μm×7μmであり、
前記有機層は色レジスト層または平坦層である
ことを特徴とする配列基板。 - 前記第一不動態化層及び第二不動態化層は無機材料からなる
ことを特徴とする請求項6に記載の配列基板。 - 前記有機層の厚さは前記第一不動態化層と第二不動態化層より厚い
ことを特徴とする請求項6に記載の配列基板。 - 配列基板の断線補修方法は、基板と、基板に設けたゲート電極走査線及び共通電極線と、前記ゲート電極走査線及び共通電極線に設けたゲート電極絶縁層と、前記ゲート電極絶縁層に設けたソースドレイン電極データ線と、前記ソースドレイン電極データ線に設けた第一不動態化層と、前記第一不動態化層に設けた有機層と、前記有機層及び第一不動態化層に設けた第二不動態化層とからなる配列基板を提供する手順1と、
ソースドレイン電極データ線の断線的位置を検出し、断線箇所の両端の開口部にレーザー熔接を行い、ソースドレイン電極データ線と共通電極線のクローズドループを継ぎ合わせる手順2と、
通電極線のクローズドループ両側の連結回路をレーザーで切断し、共通電極線のクローズドループを用いてソースドレイン電極データ線の断線部分の代わりとし、ソースドレイン電極データ線の断線修復を達成する手順3と、
からなる配列基板の断線補修方法であって、
前記共通電極線は複数個のクローズドループと複数本の連結回路からなり、
前記複数個のクローズドループは複数本の連結回路によって連結され、
前記クローズドループ及びソースドレイン電極データ線は交差して設置し、
前記有機層に対応する交差点ごとに一つの通り穴を設け、
前記第二不動態化層における通り穴に堆積している箇所は開口部を形成し、
前記開口部はソースドレイン電極データ線が断線したときにレーザーの熔接点とする
ことを特徴とする配列基板の断線補修方法。 - 前記手順1において、前記開口部のサイズは7μm×7μmである
ことを特徴とする請求項9に記載の配列基板の断線補修方法。 - 前記手順1において、前記有機層は、色レジスト層または平坦層である
ことを特徴とする請求項9に記載の配列基板の断線補修方法。 - 前記手順1において、前記第一不動態化層及び第二不動態化層は無機材料からなる
ことを特徴とする請求項9に記載の配列基板の断線補修方法。 - 前記手順1において、前記有機層の厚さは前記第一不動態化層及び第二不動態化層より厚い
ことを特徴とする請求項9に記載の配列基板の断線補修方法。
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PCT/CN2015/075674 WO2016119303A1 (zh) | 2015-01-27 | 2015-04-01 | 阵列基板及该阵列基板的断线修补方法 |
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CN104597640B (zh) * | 2015-02-12 | 2017-06-27 | 深圳市华星光电技术有限公司 | 阵列基板及其断线修补方法 |
CN104898333B (zh) * | 2015-06-17 | 2017-07-28 | 合肥鑫晟光电科技有限公司 | 一种阵列基板及其线不良维修方法、显示装置 |
CN105425433B (zh) * | 2015-11-10 | 2018-10-30 | 深圳市华星光电技术有限公司 | 具有亮点缺陷的像素的修复方法、阵列基板及液晶面板 |
CN105467706B (zh) * | 2016-01-15 | 2018-10-26 | 武汉华星光电技术有限公司 | 阵列基板结构及阵列基板断线修复方法 |
CN105527736B (zh) * | 2016-02-15 | 2019-01-18 | 京东方科技集团股份有限公司 | 一种阵列基板及其修复方法、显示面板和显示装置 |
CN105549281B (zh) * | 2016-03-16 | 2018-09-04 | 京东方科技集团股份有限公司 | 阵列基板及修复方法、显示面板和显示装置 |
CN106773427A (zh) * | 2017-03-10 | 2017-05-31 | 京东方科技集团股份有限公司 | 数据线维修方法和阵列基板 |
CN106950774A (zh) * | 2017-05-12 | 2017-07-14 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法和维修方法、显示装置 |
CN108594551A (zh) * | 2018-04-28 | 2018-09-28 | 京东方科技集团股份有限公司 | 阵列基板及其数据线断路的修复方法和显示装置 |
CN110376809A (zh) * | 2019-06-11 | 2019-10-25 | 惠科股份有限公司 | 断线修复结构、显示面板及断线修复方法 |
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CN114755866A (zh) * | 2022-04-28 | 2022-07-15 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板及该阵列基板的异常修补方法、显示面板 |
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US20160363829A1 (en) | 2016-12-15 |
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