WO2016104207A1 - Masque de dépôt en phase vapeur et son procédé de fabrication - Google Patents

Masque de dépôt en phase vapeur et son procédé de fabrication Download PDF

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Publication number
WO2016104207A1
WO2016104207A1 PCT/JP2015/084885 JP2015084885W WO2016104207A1 WO 2016104207 A1 WO2016104207 A1 WO 2016104207A1 JP 2015084885 W JP2015084885 W JP 2015084885W WO 2016104207 A1 WO2016104207 A1 WO 2016104207A1
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Prior art keywords
vapor deposition
metal layer
mask
pattern
resist
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PCT/JP2015/084885
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English (en)
Japanese (ja)
Inventor
良弘 小林
裕仁 田丸
貴士 中島
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日立マクセル株式会社
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Publication of WO2016104207A1 publication Critical patent/WO2016104207A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources

Definitions

  • the present invention relates to a vapor deposition mask and a manufacturing method thereof.
  • the present invention can be applied to a vapor deposition mask for an organic EL element used when forming a light emitting layer of an organic EL element, for example, by a vapor deposition mask method, and a manufacturing method thereof.
  • Patent Document 1 discloses a vapor deposition mask in which a reinforcing frame 103 of the mask main body 102 is attached to the outer peripheral edge of the mask main body 102 as shown in FIG.
  • the frame 103 there is made of a material having a thermal expansion coefficient equivalent to that of the deposition target substrate 30 or a material having a low thermal expansion coefficient.
  • the frame 103 is fixed on the mask body 102 via an adhesive 108 made of an adhesive that is stable against temperature changes, such as a heat-resistant ceramic adhesive or a heat-resistant epoxy resin adhesive.
  • the mask body 102 includes a vapor deposition pattern 106 for forming a light emitting layer 310 of an organic EL element, which is composed of a large number of independent vapor deposition through holes 105, in the pattern formation region 104.
  • the mask main body 102 has a thermal linear expansion coefficient equivalent to that of the vapor deposition substrate 30 even when the thermal linear expansion coefficient of the forming material of the mask main body 102 is different from that of the vapor deposition substrate 30.
  • the shape changes following the expansion of the frame 103, or the shape is not changed by being restrained by the frame 103 having a low thermal expansion coefficient.
  • the alignment accuracy of the mask body 102 with respect to the evaporation target substrate 30 at room temperature can be increased. Since it can be secured well even when the temperature rises in the kiln, there is an advantage that the light emitting layer 310 can be formed on the deposition target substrate 30 with high accuracy and good reproducibility.
  • the vapor deposition mask method is a method in which a vapor deposition mask is arranged on a vapor deposition substrate, an organic material vaporized by a vaporization source is vapor deposited in a vapor deposition through hole of the vapor deposition mask, and a light emitting layer is formed on the vapor deposition substrate.
  • the light emitting layer formed on the deposition target substrate is required to have a uniform height dimension.
  • the vapor deposition through hole 105 is straight like the vapor deposition mask shown in FIG.
  • the organic material comes not only in the straight direction but also from the oblique direction, so The organic material incident on the vapor deposition through hole 105 from the direction is blocked by the upper edge of the opening of the mask, and only a small amount of the organic material is vapor deposited on the vapor deposition substrate 30 at the edge of the vapor deposition through hole 105.
  • the layer 310 tends to have a substantially water-drop shape in a cross-sectional view in which the central portion swells and the edge portion gradually decreases. Such a distorted light-emitting layer 310 has uneven luminance, which is a major obstacle to increasing the accuracy of the element.
  • An object of the present invention is to provide a vapor deposition mask capable of forming a light emitting layer having a uniform height dimension with high accuracy and good reproducibility, and a method for manufacturing the same.
  • the vapor deposition mask 1 is provided with a vapor deposition pattern 6 comprising a large number of independent vapor deposition holes 5 in the mask body 2.
  • the vapor deposition through hole 5 communicates with the small hole portion 5a located on the vapor deposition substrate 30 side and the large hole portion 5b located on the vaporization source side and formed larger than the opening shape of the small hole portion 5a. It is characterized by being.
  • the mask body 2 includes first metal layers 13 and 44 and second metal layers 16 and 45, and the second metal layers 16 and 45 cover the upper surfaces and side surfaces of the first metal layers 13 and 44. It is formed and the cross-sectional shape of the mask main body 2 between the vapor deposition through-holes 5 is stepped.
  • each of the upper edge peripheral portions of the second metal layers 16 and 45 facing the peripheral surfaces of the large hole portion 5b and the small hole portion 5a has an R shape.
  • a vapor deposition pattern 6 is formed in the pattern formation region 4, and a frame 3 made of a material having a low coefficient of thermal expansion is disposed on the outer periphery of the mask main body 2, and the outer peripheral edge of the pattern formation region 4 of the mask main body 2. 4a and the frame 3 are integrally joined via the metal layer 9.
  • the present invention also relates to a method of manufacturing a vapor deposition mask in which a mask body 2 is provided with a vapor deposition pattern 6 comprising a large number of independent vapor deposition through holes 5, and a primary pattern resist having a resist body 12 a on the surface of a matrix 10. 12, a step of forming the first metal layer 13 on the mother die 10 using the primary pattern resist 12, and a secondary pattern resist 15 having a resist body 15 a on the surface of the mother die 10. A step of forming a second metal layer 16 on the mother die 10 and the first metal layer 13 using the secondary pattern resist 15, and a step of forming the first metal layer 13 and the second metal layer 16 from the mother die 10. And a step of peeling them together.
  • the present invention is a method of manufacturing a vapor deposition mask in which a vapor deposition pattern 6 comprising a large number of independent vapor deposition holes 5 is provided on the mask body 2, and a step of preparing a mother die 40 on which a metal film 41 is formed.
  • the method includes a step of forming a second metal layer 45 on one metal layer 44 and a step of integrally peeling the first metal layer 44 and the second metal layer 45 from the mother die 10.
  • the vapor deposition through hole 5 provided in the mask main body 2 is located on the vapor deposition source 30 side and the small hole portion 5a located on the vapor deposition substrate 30 side. Since the large hole portion 5b formed larger than the shape is formed in communication, the vapor deposition through hole 5 has an outwardly extending shape toward the vaporization source, and can accept an organic material from the vaporization source at a wide angle. Therefore, it is possible to eliminate the shadow due to the upper edge of the opening, which is generated because the vapor deposition through hole is straight, and to accurately form a light emitting layer having a uniform height.
  • the said mask main body 2 has 1st metal layer 13 * 44 and 2nd metal layer 16 * 45, The surface of 1st metal layer 13 * 44 Since the second metal layers 16 and 45 are formed so as to cover the surface, the adhesion between the first metal layers 13 and 44 and the second metal layers 16 and 45 is good, and a highly accurate vapor deposition mask can be produced. Can be manufactured well.
  • FIG. 1 is a longitudinal side view of a vapor deposition mask according to a first embodiment of the present invention.
  • Vertical side view of a vapor deposition mask according to a second embodiment of the present invention The top view of the principal part of the vapor deposition mask which concerns on 2nd Embodiment of this invention.
  • a vapor deposition mask 1 is a mask body 2 provided with a vapor deposition pattern 6 composed of a large number of independent vapor deposition holes 5.
  • the mask body 2 is formed by electroforming using a nickel alloy such as nickel or nickel-cobalt, copper, or other electrodeposited metal as a raw material.
  • the mask main body 2 is independently formed in a square matrix of 200 ⁇ 200 mm, for example, in a square shape of 50 ⁇ 50 mm, and includes a pattern formation region 4 therein. .
  • a vapor deposition pattern 6 including vapor deposition through holes 5 is formed in the pattern formation region 4.
  • the mask body 2 has a first metal layer 13 and a second metal layer 16.
  • the second metal layer 16 is formed so as to cover the upper surface and side surfaces of the first metal layer 13.
  • the upper surface indicates the vaporization source side
  • the side surface indicates the surface facing the vapor deposition through hole 5.
  • the thickness of the mask body 2 is preferably in the range of 10 to 100 ⁇ m, and is set to 20 ⁇ m in this embodiment.
  • the thickness t1 of the first metal layer 13 is preferably in the range of 5 to 90 ⁇ m and is set to 16 ⁇ m in this embodiment, and the thickness t2 of the second metal layer 16 is preferably 10 ⁇ m or less. In the example, it was set to 4 ⁇ m.
  • the shadow by the upper end periphery of the vapor deposition through-hole 5 can be eliminated, so that the thickness t2 of the 2nd metal layer 16 is thin.
  • Each vapor deposition through hole 5 is formed by communicating a small hole portion 5a with a large hole portion 5b formed larger than the opening shape of the small hole portion 5a.
  • the small hole portion 5a is a flat surface.
  • the front and rear length dimensions are 150 ⁇ m and the left and right width dimensions are 50 ⁇ m, and the large hole portion 5 b has a front and rear length dimension of 300 ⁇ m and a left and right width dimensions of 150 ⁇ m.
  • the small hole portion 5a is on the deposition target substrate 30 side, and the large hole portion 5b is on the vaporization source side.
  • These vapor deposition through holes 5 are arranged in parallel in the front-rear and / or left-right direction to constitute a vapor deposition pattern 6. As shown in FIG.
  • the mask body 2 (first metal layer 13 and second metal layer 16) between the vapor deposition through holes 5 is formed in a step shape in a cross-sectional view, so that the vapor deposition through holes 5 are small. It becomes the form comprised by the hole 5a and the large hole 5b.
  • This large hole portion 5b allows the organic material from the vaporization source to be received at a wide angle, and can cope with the organic material incident from an oblique direction, so that a light emitting layer having a uniform height can be formed. Can contribute.
  • each of the upper end peripheral portions (vaporization source side peripheral portions) of the second metal layer 16 facing the peripheral surfaces of the large hole portion 5 b and the small hole portion 5 a is formed into an R shape.
  • FIG. 1 does not show the actual state of the vapor deposition pattern 6, but schematically shows it.
  • the mask body 2 can be provided with a reinforcing frame 3 for the mask body 2.
  • the frame 3 is made of a material having a low coefficient of thermal expansion such as an invar material that is a nickel-iron alloy or a super invar material that is a nickel-iron-cobalt alloy.
  • the frame 3 is a molded product that is thicker than the mask main body 2, and is joined to the outer peripheral edge 4 a of the pattern forming region 4 of the mask main body 2 by the metal layer 9 in an integral manner.
  • four mask bodies 2 are held by one frame body 3. That is, the frame 3 has four openings 3a aligned on the plate surface, and one mask body 2 is attached to each opening 3a.
  • the frame 3 is provided with an opening 3a corresponding to the mask body 2 and is formed in a flat plate shape.
  • the thickness dimension of the frame 3 is, for example, about 100 to 500 ⁇ m, and is set to 200 ⁇ m in this embodiment.
  • the invar material or super invar material was used as the material for forming the frame 3 because its linear expansion coefficient was 2 ⁇ 10 ⁇ -6> / ⁇ 0> C or 1 * 10 ⁇ sup> ⁇ -6> sup> / ° C. or less, which is based on being able to satisfactorily suppress the dimensional change of the mask body 2 due to the thermal influence in the vapor deposition process. That is, for example, when the mask main body 2 is made of nickel as described above, the linear expansion coefficient is 12.80 ⁇ 10 ⁇ -6> / ⁇ 0> C, and the deposition target substrate 30 (FIG.
  • reference numeral 9 denotes a metal layer laminated on the upper surface of the mask body 2 related to the outer peripheral edge 4a of the pattern formation region. Specifically, the metal layer 9 is formed on the upper surface of the outer peripheral edge 4 a of the pattern formation region 4, the upper surface of the frame body 3 and the side surface facing the pattern formation region 4, and the gap portion between the mask body 2 and the frame body 3. Thus, the outer peripheral edge 4a of the pattern forming region 4 and the opening peripheral edge of the frame body 3 are joined together in an integrated manner.
  • the metal layer 9 is made of nickel, nickel-cobalt alloy, or the like, and can be formed by a plating method.
  • a photoresist layer 11 is formed on the surface of the mother die 10.
  • the mother die 10 is made of a conductive material such as stainless steel or brass steel.
  • the photoresist layer 11 is formed by laminating one or several negative photosensitive dry film resists at a predetermined height and then thermocompression bonding.
  • the mother die 10 is put in an electroforming tank bathed under a predetermined condition.
  • the resist member 12a of the mother die 10 is within the height range of the previous resist member 12a.
  • the first metal layer 13 was formed by electroforming a nickel-cobalt alloy on the uncovered surface (exposed region), preferably in the range of 5 to 90 ⁇ m thick, in this embodiment 16 ⁇ m thick. After forming the first metal layer 13, the primary pattern resist 12 (resist body 12a) is removed as shown in FIG.
  • a photoresist layer 14 was formed on the entire surface of the mother die 10 including the region where the first metal layer 13 was formed.
  • the photoresist layer 14 is formed by thermocompression bonding by laminating one or several negative photosensitive dry film resists at a predetermined height.
  • the mother die 10 is put in an electroforming tank bathed under a predetermined condition, and as shown in FIG. 4C, within the range of the height of the resist body 15a, the mother die 10 and the first metal layer.
  • the second metal layer 16 was formed by electroforming a nickel-cobalt alloy on the surface (exposed region) not covered with the resist body 16a, preferably with a thickness of 10 ⁇ m or less, in this embodiment 4 ⁇ m. .
  • the second metal layer 16 formed in a portion facing the end (top or root) of the first metal layer 13 has an R shape.
  • the edge part of the 2nd metal layer 16 which faces the vapor deposition through-hole 5 also becomes R shape.
  • the curvature of R (R) concerned can obtain desired R (R) by adjusting the thickness of the second metal layer 16. Then, by removing the secondary pattern resist 15 (resist body 15a), as shown in FIG. 4D, a mask body 2 provided with a vapor deposition pattern 6 composed of a large number of independent vapor deposition through holes 5 was obtained.
  • a photoresist layer 17 was formed on the entire surface of the mother die 10 including the portions where the first metal layer 13 and the second metal layer 16 (mask body 2) were formed.
  • the photoresist layer 17 is formed by laminating one or several negative-type photosensitive dry film resists according to a predetermined height and then thermocompression bonding.
  • exposure was performed by irradiating with ultraviolet light.
  • the frame 3 was disposed so as to surround the first metal layer 13 and the second metal layer 16.
  • the frame 3 was temporarily fixed on the mother die 10 by using the adhesiveness of the unexposed photoresist layer 17b.
  • the unexposed photoresist layer 17b exposed on the surface was dissolved and removed, and a tertiary pattern resist 18 having a resist body 18a covering the pattern forming region 4 was formed.
  • the unexposed photoresist layer 17 b existing on the lower surface of the frame 3 remains on the mother die 10.
  • the metal layer 9 is formed by electroforming an electrodeposited metal on the surface of the frame 10 and the surface of the frame 3, and the second metal layer 16 including the first metal layer 13 and the frame 3 are formed by the metal layer 9. Were joined.
  • the layer thickness of the metal layer 9 on the surface of the frame 3 was 15 ⁇ m.
  • the layer thickness is different between the surface of the mother die 10 and the frame 3 because the metal layer 9 is sequentially laminated from the surface of the mother die 10 and the metal layer 9 is not exposed.
  • the frame 3 becomes conductive with the mother die 10 and the metal layer 9 is formed on the surface of the frame 3.
  • a vapor deposition mask 1 includes a mask main body 2 provided with a vapor deposition pattern 6 composed of a large number of independent vapor deposition through holes 5.
  • the mask main body 2 includes nickel alloys such as nickel and nickel cobalt, copper, and the like. It is formed by electroforming using an electrodeposited metal as a raw material.
  • the vapor deposition mask 1 has a square shape of 500 mm ⁇ 400 mm, and includes a plurality of mask bodies 2 therein. Each mask body 2 is formed in a square shape of 50 ⁇ 40 mm, and includes a pattern formation region 4 therein.
  • a vapor deposition pattern 6 for forming a light emitting layer is formed which is composed of a large number of independent vapor deposition through holes 5.
  • the mask body 2 has a first metal layer 13 and a second metal layer 16. Specifically, as shown in FIG. 6, the second metal layer 16 is formed so as to cover the upper surface and the side surface of the first metal layer 13, and the first metal layer 13 and the second metal layer between the vapor deposition through holes 5.
  • the cross-sectional shape of 16 (mask body 2) is formed in a stepped shape. In this way, by forming the second metal layer 16 so as to cover the surface of the first metal layer 13, the first metal layer 13 and the second metal layer 16 can be compared with a configuration in which the first metal layer 13 and the second metal layer 16 are simply laminated.
  • the thickness of the mask body 2 is preferably in the range of 10 to 100 ⁇ m, and is set to 20 ⁇ m in this embodiment.
  • the thickness t1 of the first metal layer 13 is preferably in the range of 5 to 90 ⁇ m and is set to 16 ⁇ m in this embodiment, and the thickness t2 of the second metal layer 16 is preferably 10 ⁇ m or less. In the example, it was set to 4 ⁇ m.
  • the upper surface of the first metal layer 13 indicates the vaporization source side, and the side surface of the first metal layer 13 indicates the surface facing the vapor deposition through hole 5.
  • Each vapor deposition through hole 5 is formed by communicating a small hole portion 5a with a large hole portion 5b formed larger than the opening shape of the small hole portion 5a.
  • the small hole portion 5a is a flat surface.
  • the front and rear length dimensions are 150 m and the left and right width dimensions are 50 ⁇ m, and the large hole portion 5 b has a front and rear length dimension of 300 ⁇ m and a left and right width dimensions of 150 ⁇ m.
  • the small hole portion 5a is on the deposition target substrate 30 side, and the large hole portion 5b is on the vaporization source side.
  • These vapor deposition through holes 5 are arranged in parallel in the front-rear direction or the left-right direction to form a vapor deposition pattern 6.
  • the vapor deposition through-hole 5 is configured by the small hole portion 5a and the large hole portion 5b by forming the first metal layer 13 and the second metal layer 16 in a step shape in a cross-sectional view.
  • the large hole portion 5b makes it possible to accept an organic material from a vaporization source at a wide angle, and to deal with an organic material incident from an oblique direction. Can contribute to formation.
  • each of the upper edge peripheral portions (vaporization source side peripheral portions) of the second metal layer 16 facing the peripheral surfaces of the large hole portions 5b and the small hole portions 5a is formed in an R shape, so that the large hole portions 5b and the small hole portions 5a are formed.
  • FIG. 1 does not show the actual state of the vapor deposition pattern 6, but schematically shows it.
  • the mask body 2 can be equipped with a frame 3 for reinforcement of the mask body 2.
  • the frame 3 is made of a material having a low coefficient of thermal expansion such as an invar material that is a nickel-iron alloy or a super invar material that is a nickel-iron-cobalt alloy.
  • the frame 3 is a molded product that is thicker than the mask main body 2, and is joined to the outer peripheral edge 4 a of the pattern forming region 4 of the mask main body 2 by the metal layer 9 in an integral manner.
  • 30 mask bodies 2 are held by one frame body 3. That is, the frame 3 has 30 openings 3a aligned on the plate surface, and one mask body 2 is attached to each opening 3a.
  • the frame 3 is provided with an opening 3a corresponding to the mask body 2 and is formed in a flat plate shape.
  • the thickness dimension of the frame 3 is, for example, about 100 to 500 ⁇ m, and is set to 250 ⁇ m in this embodiment.
  • the invar material or super invar material was used as the material for forming the frame 3 because its linear expansion coefficient was 2 ⁇ 10 ⁇ -6> / ⁇ 0> C or 1 * 10 ⁇ sup> ⁇ -6> sup> / ° C. or less, which is based on being able to satisfactorily suppress the dimensional change of the mask body 2 due to the thermal influence in the vapor deposition process. That is, for example, when the mask main body 2 is made of nickel as described above, the linear expansion coefficient is 12.80 ⁇ 10 ⁇ -6> / ⁇ 0> C, and the deposition target substrate 30 (FIG.
  • reference numeral 9 denotes a metal layer that joins the outer peripheral edge 4 a of the pattern formation region 4 of the mask body 2 and the frame 3.
  • the metal layer 9 is formed by a plating method and is made of an electroformed metal such as nickel or a nickel-cobalt alloy.
  • a large number of through holes 21 are provided over the entire circumference of the outer peripheral edge 4 a of the pattern formation region 4 of the mask body 2, and pattern formation of the mask body 2 is performed.
  • the outer peripheral edge 4a of the region 4 and the frame 3 are integrally joined via the metal layer 9 formed so as to fill the through hole 21.
  • the metal layer 9 according to the present embodiment includes the upper surface of the outer peripheral edge 4 a of the pattern formation region 4, the upper surface of the frame body 3, the side surface facing the pattern formation region 4, and the gap portion between the mask body 2 and the frame body 3.
  • the bonding strength between the two and the third layer can be improved. Therefore, inadvertent dropping or misalignment of the mask body 2 with respect to the frame 3 can be reliably suppressed. Accordingly, it is possible to improve the reproduction accuracy and vapor deposition accuracy of the light emitting layer.
  • the four corners of the mask body 2 are chamfered in plan view. According to this, when the mask main body 2 thermally expands, it can suppress that stress concentrates on a corner
  • a photoresist layer 11 is formed on the surface of the mother die 10.
  • a material having conductivity and a low-temperature expansion coefficient is desirable, and examples thereof include 42 alloy, Invar, and SUS430 (stainless steel).
  • the photoresist layer 11 is formed by laminating one or several negative photosensitive dry film resists according to a predetermined height by thermocompression bonding.
  • the mother die 10 is put in an electroforming tank bathed under a predetermined condition, and the resist member 12a of the mother die 10 is within the height range of the previous resist member 12a as shown in FIG.
  • the first metal layer 13 was formed by electroforming a nickel-cobalt alloy on the uncovered surface (exposed region), preferably in the range of 5 to 90 ⁇ m thick, in this example 16 ⁇ m thick.
  • the primary pattern resist 12 resist body 12a
  • the first metal layer 13 may have a two-layer structure of a bright nickel layer and a dull nickel layer.
  • an electrodeposition layer made of bright nickel is electroformed on the mother die 10 by 5 ⁇ m, and an electrodeposition layer made of non-gloss nickel is then electroformed by 11 ⁇ m.
  • symbol 13a shows the 1st metal layer formed between the mask main bodies 2 * 2.
  • a photoresist layer 14 was formed on the entire surface of the mother die 10 including the formation region of the first metal layer 13.
  • the photoresist layer 14 is formed by thermocompression bonding by laminating one or several negative photosensitive dry film resists at a predetermined height.
  • the mother die 10 is put in an electroforming tank bathed under a predetermined condition, and as shown in FIG. 11C, the mother die 10 and the first metal layer are within the range of the height of the resist body 15a.
  • the second metal layer 16 was formed by electroforming a nickel-cobalt alloy on the surface (exposed region) not covered with the resist body 16a, preferably with a thickness of 10 ⁇ m or less, in this embodiment 4 ⁇ m. .
  • the second metal layer 16 formed in a portion facing the end (top or root) of the first metal layer 13 has an R shape.
  • the edge part of the 2nd metal layer 16 which faces the vapor deposition through-hole 5 also becomes R shape.
  • the curvature of R (R) concerned can obtain desired R (R) by adjusting the thickness of the second metal layer 16. Then, by removing the secondary pattern resist 15 (resist body 15a), as shown in FIG. 11D, the vapor deposition pattern 6 composed of a large number of independent vapor deposition holes 5, and the entire outer peripheral edge of the vapor deposition pattern 6 Thus, a mask body 2 provided with through holes 21 for increasing the bonding strength was obtained. Each corner of the mask body 2 is formed in a chamfered shape in plan view as shown in FIGS.
  • reference numeral 16a indicates a second metal layer formed between the mask bodies 2 and 2, and is formed on the first metal layer 13a.
  • a photoresist layer 17 was formed on the entire surface of the mother die 10 including the portions where the first metal layer 13 and the second metal layer 16 (mask body 2) were formed.
  • the photoresist layer 17 is formed by thermocompression bonding of one or several negative photosensitive dry film resists having a predetermined height in the same manner as described above.
  • exposure was performed by irradiating with ultraviolet light.
  • the frame 3 was disposed so as to surround the first metal layer 13 and the second metal layer 16.
  • the frame 3 was temporarily fixed on the mother die 10 by using the adhesiveness of the unexposed photoresist layer 17b.
  • the unexposed photoresist layer 17b exposed on the surface was dissolved and removed to form a tertiary pattern resist 18 having a resist body 18a covering the pattern formation region.
  • the unexposed photoresist layer 17 b existing on the lower surface of the frame 3 remains on the mother die 10.
  • an electrodeposited metal is electroformed to form the metal layer 9, and the metal layer 9 forms the first electrodeposited layer 13 and the second metal layer 16 ( The mask body 2) and the frame 3 were joined together.
  • the first electrodeposition layer 13 around the through hole 21 specifically the inner wall surface of the through hole 21 and the upper surface of the first electrodeposition layer 13 around the through hole 21.
  • a treatment such as acid dipping, electrolytic treatment, strike plating, etc.
  • FIGS. 13 and FIG. 14 show a method for manufacturing a vapor deposition mask according to the present embodiment, and each step of the manufacturing method will be described below.
  • a mother die 40 on which a metal film 41 is formed is prepared.
  • an insulating substrate such as a glass plate or a resin plate is used.
  • the metal film 41 is made of a conductive metal such as chromium or titanium.
  • the metal film 41 is formed by depositing a metal film on the entire surface of the mother die 40 by sputtering, forming a resist pattern using a photolithography technique, etching away the metal film exposed from the resist pattern, and removing the resist pattern. By removing, the metal film 41 is patterned on the surface of the mother die 40.
  • a first metal layer 44 and a second metal layer 45 described later are formed on the metal film 41 thus patterned, and the space between the metal films 41 corresponds to the position of the small hole portion 5a of the vapor deposition through hole 5.
  • a glass plate is used as the matrix 40 and chromium is used as the metal film 41, and the thickness of the metal film 41 is 1 ⁇ m or less.
  • a photoresist layer 42 is formed on the surface of the mother die 40.
  • the photoresist layer 11 is formed by laminating one or several negative photosensitive dry film resists according to a predetermined height by thermocompression bonding.
  • the mother die 40 is put in an electroforming bath that is bathed under a predetermined condition, and as shown in FIG. 14A, the resist member 43a of the mother die 40 is within the height range of the previous resist member 43a.
  • the first metal layer 44 was formed by electroforming a nickel-cobalt alloy on the uncovered surface (exposed region), preferably in the range of 5 to 90 ⁇ m thick, in this embodiment 16 ⁇ m thick. Before forming the first metal layer 44, an oxide film, an organic film, a polymer film, or the like may be formed on the surface of the metal film 41 exposed from the resist body 43a.
  • the pattern resist 43 (resist body 43a) is removed.
  • the mother die 40 is placed in an electroforming tank bathed under predetermined conditions, and as shown in FIG. 14 (c), a nickel-cobalt alloy is formed on the surface of the metal film 41 and the first metal layer 44, preferably 10 ⁇ m.
  • the second metal layer 45 was formed by electroforming with a thickness of 4 ⁇ m in the present embodiment.
  • the second metal layer 45 formed in a portion facing the ends (the top and the base) of the metal film 41 and the first metal layer 44 has an R shape. Thereby, the shadow by the upper-end periphery of the large hole part 5b and the small hole part 5a can be eliminated as much as possible.
  • the curvature of R (R) can be obtained by adjusting the thickness of the second metal layer 45.
  • an oxide film, an organic film, a polymer film, or the like may be formed on the surfaces of the metal film 41 and the first metal layer 44 before the second metal layer 45 is formed.
  • the mask main body 2 in the present embodiment has a minute recess 50 on the back surface side (deposition target substrate 30 side) of the first metal layer 44.
  • the shape of the minute recess 50 is formed corresponding to the shape of the metal film 41. Since the micro dent 50 is present, the outer peripheral portion of the micro dent 50 (the peripheral portion of the small hole portion 5a on the vapor deposition substrate 30 side) has a protruding shape, and thus the vapor deposition mask 1 is mounted on the vapor deposition substrate 30.
  • the vapor deposition mask 1 When vapor deposition is performed, the vapor deposition mask 1 can be placed on the vapor deposition substrate 30 with good contact by the line contact between the vapor deposition through hole 5 of the mask body 2 and the vapor deposition substrate 30, and vaporized from the vaporization source. It is possible to prevent the organic material from bleeding and vapor deposition on the back surface of the vapor deposition mask 1.
  • the metal layer 9 is formed in a state where a tension is applied so that the tensile stress F1 acts to draw the first metal layer 13 and the second metal layer 16, that is, the mask body 2 toward the frame 3 side. can do.
  • the application of such tensile stress can be realized by adjusting the content ratio of carbon in the second type brightener added to the electroforming tank.
  • the first metal layer 13 and the second metal layer 16 are stretched in a state in which a tensile stress tensioned to the frame body 3 is applied via the metal layer 9, the ambient temperature during the vapor deposition operation Even with the rise, the expansion of the mask body 2 due to the difference in thermal expansion coefficient with the frame 3 is absorbed, and the deposition mask 1 is less likely to vary in dimensional accuracy due to heat. It can contribute to improvement. Furthermore, the influence of heat can be suppressed as much as possible by adopting a material that hardly undergoes thermal expansion as the frame 3 that holds the mask body 2.
  • the mask body 2 that is, the first metal layer 13 and the second metal layer 16 are formed in a state where a tension is applied so that the stress F ⁇ b> 2 in the direction in which the mask body 2 contracts inwardly acts.
  • tensile stress F2 is caused by the temperature difference between the temperature of the electroformed layer (40 to 50 ° C.) and the normal temperature (20 ° C.) when the first metal layer 13 and the second metal layer 16 are formed. This can be realized by causing the first metal layer 13 and the second metal layer 16 to contract.
  • the first metal layer 13 and the second metal in the electroformed layer at 40 to 50 ° C.
  • the first metal layer 13 such as nickel or nickel alloy and the second metal layer 16 have a higher expansion coefficient than the mother die 10, so that stress that tends to expand acts on the mother die ( However, the expansion of the metal layer 9 at this time is regulated by the mother die 10).
  • the first metal layer 13 and the second metal layer 16 tend to shrink inward, and thus peel off from the mother die 10.
  • the first metal layer 13 and the second metal layer 16, that is, the mask main body 2 is subjected to a tensile stress F ⁇ b> 2 on the frame body 3.
  • the mask body 2 can be stretched with a pin having no wrinkles, so that the expansion of the mask body 2 itself due to the difference in the thermal expansion coefficient with the frame 3 can be achieved even when the ambient temperature rises during the vapor deposition operation.
  • the deposition mask 1 is less likely to vary in dimensional accuracy due to heat, and can contribute to improvement in the light emitting layer reproduction accuracy and vapor deposition accuracy.
  • the formation of the through holes 21, the corners of the mask main body 2 are chamfered, and the frame body 3 itself that holds the mask main body 2 is made of a material that hardly thermally expands, thereby causing variations in dimensional accuracy due to heat. This can be further reduced by improving the reproduction accuracy and vapor deposition accuracy of the light emitting layer.
  • the surface activation treatment (acid immersion, cathode) is performed on the surface of the first metal layer 13/44 before the second metal layer 16/45 is formed on the first metal layer 13/44. Electrolysis, chemical etching, strike plating, etc.) may be performed.
  • an overhang 60 is formed on the upper edge of the first metal layer 13, 44, and the second metal layer 16, 45 is formed on the first metal layer 13, 44.
  • the overhanging portion 60 When the first metal layers 13 and 44 are formed, the overhanging portion 60 performs electroforming, so-called overhang, exceeding the thickness of the resist bodies 12a and 43a, so that the upper ends of the first metal layers 13 and 44 are formed. It is possible to obtain a shape in which an overhanging portion 60 having a cross-sectional ridge shape is integrally formed on the periphery.
  • the number of mask main bodies 2 that the vapor deposition mask 1 has is not limited to that shown in the above embodiments.
  • the second metal layer 16 may be formed after the first metal layer 13 is polished and smoothed before or after removing the primary pattern resist 12.
  • the second metal layer 16 may be polished and smoothed, and then the tertiary pattern resist 18 may be formed in the pattern formation region 4.
  • a material of the frame 3 in addition to a metal material such as an invar material shown in the embodiment, a material having a low coefficient of thermal expansion as close to glass as a deposition substrate as much as possible, such as glass or ceramic, is used. You can choose. In this case, it is necessary to impart conductivity to at least the surface of these materials.
  • the formed vapor deposition mask 1 may be pulled and a fixed frame such as stainless steel or aluminum may be separately fixed to the outer periphery by a known method.
  • a fixed frame such as stainless steel or aluminum
  • a tension applied via the metal layer 9 as in the embodiment, a so-called frame-less operation requiring no fixed frame is possible.

Abstract

La présente invention se rapporte à : un masque de dépôt en phase vapeur, avec lequel une couche lumineuse ayant une hauteur uniforme peut être formée avec une précision élevée et une bonne reproductibilité; et un procédé de fabrication associé. Un motif 6 de dépôt en phase vapeur obtenu à partir de multiples trous traversants 5 indépendants de dépôt en phase vapeur est formé sur un corps de masque 2. Dans les trous traversants 5 de dépôt en phase vapeur, des parties à petits trous 5a, qui sont situées sur le côté du substrat 30 devant être revêtu, sont formées de manière à se trouver en communication avec des parties à grands trous 5b, qui sont situées sur le côté source de vaporisation et sont formées de manière à ce qu'elles soient plus grandes que la forme de l'ouverture des parties à petits trous 5a. Il s'ensuit que les trous traversants 5 de dépôt en phase vapeur présentent une forme qui s'élargit en direction de la source de vaporisation, permettant aux trous d'accepter un matériau organique provenant de la source de vaporisation selon un large angle et permettant la formation avec une bonne précision d'une couche lumineuse ayant une hauteur uniforme.
PCT/JP2015/084885 2014-12-27 2015-12-14 Masque de dépôt en phase vapeur et son procédé de fabrication WO2016104207A1 (fr)

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CN109811301A (zh) * 2017-11-22 2019-05-28 麦克赛尔控股株式会社 蒸镀掩模及其制造方法
CN113088875A (zh) * 2021-04-02 2021-07-09 京东方科技集团股份有限公司 掩膜版及其制备方法

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JP6869253B2 (ja) * 2016-02-03 2021-05-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ マスクパターン、マスク、およびマスクの製造方法

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