WO2016104207A1

WO2016104207A1 - Vapor deposition mask and manufacturing method therefor

Info

Publication number: WO2016104207A1
Application number: PCT/JP2015/084885
Authority: WO
Inventors: 良弘小林; 裕仁田丸; 貴士中島
Original assignee: 日立マクセル株式会社
Priority date: 2014-12-27
Filing date: 2015-12-14
Publication date: 2016-06-30
Also published as: JP2016125097A; JP6599103B2

Abstract

Provided are: a vapor deposition mask, with which a luminous layer with a uniform height can be formed with high precision and good reproducibility; and a manufacturing method therefor. A vapor deposition pattern 6 obtained from multiple independent vapor deposition through holes 5 is provided on a mask body 2. In the vapor deposition through holes 5, small hole parts 5a, which are located on the side of the substrate 30 to be coated, are formed so as to be in communication with large hole parts 5b, which are located on the vaporization source-side and are formed to be larger than the shape of the opening of the small hole parts 5a. As a result, the vapor deposition through holes 5 have a form that widens toward vaporization source, making it possible for the holes to accept organic material from the vaporization source at a wide angle and making it possible to form a luminous layer with a uniform height with good precision.

Description

Vapor deposition mask and manufacturing method thereof

The present invention relates to a vapor deposition mask and a manufacturing method thereof. The present invention can be applied to a vapor deposition mask for an organic EL element used when forming a light emitting layer of an organic EL element, for example, by a vapor deposition mask method, and a manufacturing method thereof.

Patent Document 1 discloses a vapor deposition mask in which a reinforcing frame 103 of the mask main body 102 is attached to the outer peripheral edge of the mask main body 102 as shown in FIG. The frame 103 there is made of a material having a thermal expansion coefficient equivalent to that of the deposition target substrate 30 or a material having a low thermal expansion coefficient. The frame 103 is fixed on the mask body 102 via an adhesive 108 made of an adhesive that is stable against temperature changes, such as a heat-resistant ceramic adhesive or a heat-resistant epoxy resin adhesive. The mask body 102 includes a vapor deposition pattern 106 for forming a light emitting layer 310 of an organic EL element, which is composed of a large number of independent vapor deposition through holes 105, in the pattern formation region 104. According to the vapor deposition mask disclosed in Patent Document 1, the mask main body 102 has a thermal linear expansion coefficient equivalent to that of the vapor deposition substrate 30 even when the thermal linear expansion coefficient of the forming material of the mask main body 102 is different from that of the vapor deposition substrate 30. The shape changes following the expansion of the frame 103, or the shape is not changed by being restrained by the frame 103 having a low thermal expansion coefficient. Therefore, the alignment accuracy of the mask body 102 with respect to the evaporation target substrate 30 at room temperature can be increased. Since it can be secured well even when the temperature rises in the kiln, there is an advantage that the light emitting layer 310 can be formed on the deposition target substrate 30 with high accuracy and good reproducibility.

JP 2002-371349 A

The vapor deposition mask method is a method in which a vapor deposition mask is arranged on a vapor deposition substrate, an organic material vaporized by a vaporization source is vapor deposited in a vapor deposition through hole of the vapor deposition mask, and a light emitting layer is formed on the vapor deposition substrate. In addition, the light emitting layer formed on the deposition target substrate is required to have a uniform height dimension. However, when the vapor deposition through hole 105 is straight like the vapor deposition mask shown in FIG. 17, the organic material comes not only in the straight direction but also from the oblique direction, so The organic material incident on the vapor deposition through hole 105 from the direction is blocked by the upper edge of the opening of the mask, and only a small amount of the organic material is vapor deposited on the vapor deposition substrate 30 at the edge of the vapor deposition through hole 105. The layer 310 tends to have a substantially water-drop shape in a cross-sectional view in which the central portion swells and the edge portion gradually decreases. Such a distorted light-emitting layer 310 has uneven luminance, which is a major obstacle to increasing the accuracy of the element.

An object of the present invention is to provide a vapor deposition mask capable of forming a light emitting layer having a uniform height dimension with high accuracy and good reproducibility, and a method for manufacturing the same.

The vapor deposition mask 1 according to the present invention is provided with a vapor deposition pattern 6 comprising a large number of independent vapor deposition holes 5 in the mask body 2. The vapor deposition through hole 5 communicates with the small hole portion 5a located on the vapor deposition substrate 30 side and the large hole portion 5b located on the vaporization source side and formed larger than the opening shape of the small hole portion 5a. It is characterized by being.

The mask body 2 includes

first metal layers

13 and 44 and

second metal layers

16 and 45, and the

second metal layers

16 and 45 cover the upper surfaces and side surfaces of the

first metal layers

13 and 44. It is formed and the cross-sectional shape of the mask main body 2 between the vapor deposition through-holes 5 is stepped.

Further, each of the upper edge peripheral portions of the

second metal layers

16 and 45 facing the peripheral surfaces of the large hole portion 5b and the small hole portion 5a has an R shape.

Further, a vapor deposition pattern 6 is formed in the pattern formation region 4, and a frame 3 made of a material having a low coefficient of thermal expansion is disposed on the outer periphery of the mask main body 2, and the outer peripheral edge of the pattern formation region 4 of the mask main body 2. 4a and the frame 3 are integrally joined via the metal layer 9.

The present invention also relates to a method of manufacturing a vapor deposition mask in which a mask body 2 is provided with a vapor deposition pattern 6 comprising a large number of independent vapor deposition through holes 5, and a primary pattern resist having a resist body 12 a on the surface of a matrix 10. 12, a step of forming the first metal layer 13 on the mother die 10 using the primary pattern resist 12, and a secondary pattern resist 15 having a resist body 15 a on the surface of the mother die 10. A step of forming a second metal layer 16 on the mother die 10 and the first metal layer 13 using the secondary pattern resist 15, and a step of forming the first metal layer 13 and the second metal layer 16 from the mother die 10. And a step of peeling them together.

Furthermore, the present invention is a method of manufacturing a vapor deposition mask in which a vapor deposition pattern 6 comprising a large number of independent vapor deposition holes 5 is provided on the mask body 2, and a step of preparing a mother die 40 on which a metal film 41 is formed. A step of forming a pattern resist 43 having a resist body 43 a on the surface of the mother die 40, a step of forming a first metal layer 44 on the metal film 41 using the pattern resist 43, The method includes a step of forming a second metal layer 45 on one metal layer 44 and a step of integrally peeling the first metal layer 44 and the second metal layer 45 from the mother die 10.

According to the vapor deposition mask according to the present invention, the vapor deposition through hole 5 provided in the mask main body 2 is located on the vapor deposition source 30 side and the small hole portion 5a located on the vapor deposition substrate 30 side. Since the large hole portion 5b formed larger than the shape is formed in communication, the vapor deposition through hole 5 has an outwardly extending shape toward the vaporization source, and can accept an organic material from the vaporization source at a wide angle. Therefore, it is possible to eliminate the shadow due to the upper edge of the opening, which is generated because the vapor deposition through hole is straight, and to accurately form a light emitting layer having a uniform height.

Moreover, according to the manufacturing method of the vapor deposition mask which concerns on this invention, the said mask main body 2 has 1st metal layer 13 * 44 and 2nd metal layer 16 * 45, The surface of 1st metal layer 13 * 44 Since the

second metal layers

16 and 45 are formed so as to cover the surface, the adhesion between the

first metal layers

13 and 44 and the

second metal layers

16 and 45 is good, and a highly accurate vapor deposition mask can be produced. Can be manufactured well.

1 is a longitudinal side view of a vapor deposition mask according to a first embodiment of the present invention. The disassembled perspective view of the vapor deposition mask which concerns on 1st Embodiment of this invention. Process explanatory drawing of the manufacturing process of the vapor deposition mask which concerns on 1st Embodiment of this invention. Process explanatory drawing of the manufacturing process of the vapor deposition mask which concerns on 1st Embodiment of this invention. Process explanatory drawing of the manufacturing process of the vapor deposition mask which concerns on 1st Embodiment of this invention. Vertical side view of a vapor deposition mask according to a second embodiment of the present invention The top view of the principal part of the vapor deposition mask which concerns on 2nd Embodiment of this invention. The perspective view of the principal part of the vapor deposition mask which concerns on 2nd Embodiment of this invention. The disassembled perspective view of the vapor deposition mask which concerns on 2nd Embodiment of this invention. Process explanatory drawing of the manufacture process of the vapor deposition mask which concerns on 2nd Embodiment of this invention. Process explanatory drawing of the manufacture process of the vapor deposition mask which concerns on 2nd Embodiment of this invention. Process explanatory drawing of the manufacture process of the vapor deposition mask which concerns on 2nd Embodiment of this invention. Process explanatory drawing of the manufacture process of the vapor deposition mask which concerns on 3rd Embodiment of this invention. Process explanatory drawing of the manufacture process of the vapor deposition mask which concerns on 3rd Embodiment of this invention. Vertical side view of the vapor deposition mask according to the third embodiment of the present invention Vertical side view of a vapor deposition mask according to another embodiment of the present invention Longitudinal sectional view showing a conventional deposition mask

(First embodiment)
In FIG. 1, a vapor deposition mask 1 is a mask body 2 provided with a vapor deposition pattern 6 composed of a large number of independent vapor deposition holes 5. The mask body 2 is formed by electroforming using a nickel alloy such as nickel or nickel-cobalt, copper, or other electrodeposited metal as a raw material. In FIG. 2, the mask main body 2 is independently formed in a square matrix of 200 × 200 mm, for example, in a square shape of 50 × 50 mm, and includes a pattern formation region 4 therein. . A vapor deposition pattern 6 including vapor deposition through holes 5 is formed in the pattern formation region 4.

The mask body 2 has a first metal layer 13 and a second metal layer 16. Specifically, the second metal layer 16 is formed so as to cover the upper surface and side surfaces of the first metal layer 13. In the present embodiment, the upper surface indicates the vaporization source side, and the side surface indicates the surface facing the vapor deposition through hole 5. In this way, by forming the second metal layer 16 so as to cover the surface of the first metal layer 13, the first metal layer 13 and the second metal layer 16 can be compared with a configuration in which the first metal layer 13 and the second metal layer 16 are simply laminated. Since the surface area of contact between the layer 13 and the second metal layer 16 is increased, a laminated structure in which the first metal layer 13 and the second metal layer 16 are firmly adhered can be obtained. The thickness of the mask body 2 is preferably in the range of 10 to 100 μm, and is set to 20 μm in this embodiment. Specifically, the thickness t1 of the first metal layer 13 is preferably in the range of 5 to 90 μm and is set to 16 μm in this embodiment, and the thickness t2 of the second metal layer 16 is preferably 10 μm or less. In the example, it was set to 4 μm. In addition, the shadow by the upper end periphery of the vapor deposition through-hole 5 can be eliminated, so that the thickness t2 of the 2nd metal layer 16 is thin.

Each vapor deposition through hole 5 is formed by communicating a small hole portion 5a with a large hole portion 5b formed larger than the opening shape of the small hole portion 5a. For example, the small hole portion 5a is a flat surface. The front and rear length dimensions are 150 μm and the left and right width dimensions are 50 μm, and the large hole portion 5 b has a front and rear length dimension of 300 μm and a left and right width dimensions of 150 μm. Have. The small hole portion 5a is on the deposition target substrate 30 side, and the large hole portion 5b is on the vaporization source side. These vapor deposition through holes 5 are arranged in parallel in the front-rear and / or left-right direction to constitute a vapor deposition pattern 6. As shown in FIG. 1, the mask body 2 (first metal layer 13 and second metal layer 16) between the vapor deposition through holes 5 is formed in a step shape in a cross-sectional view, so that the vapor deposition through holes 5 are small. It becomes the form comprised by the hole 5a and the large hole 5b. This large hole portion 5b allows the organic material from the vaporization source to be received at a wide angle, and can cope with the organic material incident from an oblique direction, so that a light emitting layer having a uniform height can be formed. Can contribute. Moreover, as shown in FIG. 1, each of the upper end peripheral portions (vaporization source side peripheral portions) of the second metal layer 16 facing the peripheral surfaces of the large hole portion 5 b and the small hole portion 5 a is formed into an R shape. Shadows due to the upper edge of the hole 5b and the small hole 5a can be eliminated as much as possible, the acceptance angle of the organic material can be further widened, and a light emitting layer having a more uniform height can be obtained. In addition, the longitudinal cross-sectional view of FIG. 1 does not show the actual state of the vapor deposition pattern 6, but schematically shows it.

The mask body 2 can be provided with a reinforcing frame 3 for the mask body 2. The frame 3 is made of a material having a low coefficient of thermal expansion such as an invar material that is a nickel-iron alloy or a super invar material that is a nickel-iron-cobalt alloy. The frame 3 is a molded product that is thicker than the mask main body 2, and is joined to the outer peripheral edge 4 a of the pattern forming region 4 of the mask main body 2 by the metal layer 9 in an integral manner. Here, as shown in FIG. 2, four mask bodies 2 are held by one frame body 3. That is, the frame 3 has four openings 3a aligned on the plate surface, and one mask body 2 is attached to each opening 3a. The frame 3 is provided with an opening 3a corresponding to the mask body 2 and is formed in a flat plate shape. The thickness dimension of the frame 3 is, for example, about 100 to 500 μm, and is set to 200 μm in this embodiment.

The invar material or super invar material was used as the material for forming the frame 3 because its linear expansion coefficient was 2 × 10 <-6> / <0> C or 1 * 10 <-6> sup> / ° C. or less, which is based on being able to satisfactorily suppress the dimensional change of the mask body 2 due to the thermal influence in the vapor deposition process. That is, for example, when the mask main body 2 is made of nickel as described above, the linear expansion coefficient is 12.80 × 10 <-6> / <0> C, and the deposition target substrate 30 (FIG. 17) is a few times larger than the linear expansion coefficient of general glass 3.20 × 10 -6 / ° C. It is inevitable that a positional deviation occurs between the deposition position when the deposition mask 1 is aligned with the deposition target substrate 30 and the deposition position of the deposition material during actual deposition. Therefore, if a material having a small linear expansion coefficient such as an invar material is used as a material for forming the frame body 3 that holds the mask body 2, dimensional changes and shape changes caused by expansion of the mask body 2 at the time of temperature rise. The alignment accuracy at room temperature can be kept good even when the temperature rises during vapor deposition.

In FIG. 1, reference numeral 9 denotes a metal layer laminated on the upper surface of the mask body 2 related to the outer peripheral edge 4a of the pattern formation region. Specifically, the metal layer 9 is formed on the upper surface of the outer peripheral edge 4 a of the pattern formation region 4, the upper surface of the frame body 3 and the side surface facing the pattern formation region 4, and the gap portion between the mask body 2 and the frame body 3. Thus, the outer peripheral edge 4a of the pattern forming region 4 and the opening peripheral edge of the frame body 3 are joined together in an integrated manner. The metal layer 9 is made of nickel, nickel-cobalt alloy, or the like, and can be formed by a plating method.

3 to 5 show a method for manufacturing a vapor deposition mask according to the present embodiment. First, as shown in FIG. 3A, a photoresist layer 11 is formed on the surface of the mother die 10. The mother die 10 is made of a conductive material such as stainless steel or brass steel. The photoresist layer 11 is formed by laminating one or several negative photosensitive dry film resists at a predetermined height and then thermocompression bonding.

Next, after making a pattern film (glass mask) having a light transmitting hole corresponding to the position of the large hole portion 5b of the vapor deposition through hole 5 adhere on the photoresist layer 11, exposure is performed by irradiating ultraviolet light. By performing each process of development and drying, and removing the unexposed portion, as shown in FIG. 3B, a straight resist body 12a corresponding to the position of the large hole portion 5b of the vapor deposition through hole 5 is provided. A primary pattern resist 12 was formed on the matrix 10.

Next, the mother die 10 is put in an electroforming tank bathed under a predetermined condition. As shown in FIG. 3C, the resist member 12a of the mother die 10 is within the height range of the previous resist member 12a. The first metal layer 13 was formed by electroforming a nickel-cobalt alloy on the uncovered surface (exposed region), preferably in the range of 5 to 90 μm thick, in this embodiment 16 μm thick. After forming the first metal layer 13, the primary pattern resist 12 (resist body 12a) is removed as shown in FIG.

Subsequently, as shown in FIG. 4A, a photoresist layer 14 was formed on the entire surface of the mother die 10 including the region where the first metal layer 13 was formed. The photoresist layer 14 is formed by thermocompression bonding by laminating one or several negative photosensitive dry film resists at a predetermined height.

Next, after a pattern film having a light transmitting hole corresponding to the position of the small hole portion 5a of the vapor deposition through hole 5 is adhered, exposure is performed by irradiating with ultraviolet light, and each process of development and drying is performed. By removing the portion, as shown in FIG. 4B, a secondary pattern resist 15 having a straight resist body 15 a corresponding to the position of the small hole portion 5 a of the vapor deposition through hole 5 was formed on the matrix 10. .

Next, the mother die 10 is put in an electroforming tank bathed under a predetermined condition, and as shown in FIG. 4C, within the range of the height of the resist body 15a, the mother die 10 and the first metal layer. The second metal layer 16 was formed by electroforming a nickel-cobalt alloy on the surface (exposed region) not covered with the resist body 16a, preferably with a thickness of 10 μm or less, in this embodiment 4 μm. . At this time, the second metal layer 16 formed in a portion facing the end (top or root) of the first metal layer 13 has an R shape. Moreover, the edge part of the 2nd metal layer 16 which faces the vapor deposition through-hole 5 also becomes R shape. In addition, the curvature of R (R) concerned can obtain desired R (R) by adjusting the thickness of the second metal layer 16. Then, by removing the secondary pattern resist 15 (resist body 15a), as shown in FIG. 4D, a mask body 2 provided with a vapor deposition pattern 6 composed of a large number of independent vapor deposition through holes 5 was obtained.

Subsequently, as shown in FIG. 5A, a photoresist layer 17 was formed on the entire surface of the mother die 10 including the portions where the first metal layer 13 and the second metal layer 16 (mask body 2) were formed. The photoresist layer 17 is formed by laminating one or several negative-type photosensitive dry film resists according to a predetermined height and then thermocompression bonding. Next, after a pattern film having a light transmitting hole corresponding to the pattern forming region 4 was adhered, exposure was performed by irradiating with ultraviolet light. Thus, after obtaining the photoresist layer 17 in which the portion related to the pattern formation region 4 is exposed (17a) and the other portion is unexposed (17b), as shown in FIG. On 10, the frame 3 was disposed so as to surround the first metal layer 13 and the second metal layer 16. Here, the frame 3 was temporarily fixed on the mother die 10 by using the adhesiveness of the unexposed photoresist layer 17b.

Next, as shown in FIG. 5C, the unexposed photoresist layer 17b exposed on the surface was dissolved and removed, and a tertiary pattern resist 18 having a resist body 18a covering the pattern forming region 4 was formed. At this time, the unexposed photoresist layer 17 b existing on the lower surface of the frame 3 remains on the mother die 10.

Next, as shown in FIG. 5 (d), the upper surface of the second metal layer 16 exposed on the surface related to the outer peripheral edge 4 a of the pattern formation region 4, the matrix exposed between the frame 3 and the second metal layer 16. The metal layer 9 is formed by electroforming an electrodeposited metal on the surface of the frame 10 and the surface of the frame 3, and the second metal layer 16 including the first metal layer 13 and the frame 3 are formed by the metal layer 9. Were joined. At this time, the metal layer 9 on the upper surface of the second metal layer 16 exposed on the surface related to the outer peripheral edge 4 a of the pattern formation region 4 and on the surface of the mother die 10 exposed between the frame 3 and the second metal layer 16. The layer thickness of the metal layer 9 on the surface of the frame 3 was 15 μm. As described above, the layer thickness is different between the surface of the mother die 10 and the frame 3 because the metal layer 9 is sequentially laminated from the surface of the mother die 10 and the metal layer 9 is not exposed. When the height of the photoresist layer 17 b is exceeded and the frame 3 is reached, the frame 3 becomes conductive with the mother die 10 and the metal layer 9 is formed on the surface of the frame 3.

Finally, after the first metal layer 13, the second metal layer 16, and the metal layer 9 are peeled from the matrix 10, the tertiary pattern resist 18 and the unexposed photoresist layer 17b existing on the lower surface of the frame 3 are removed. As a result, a mask 1 as shown in FIG. 1 was obtained.

(Second Embodiment)
A vapor deposition mask according to a second embodiment of the present invention will be described with reference to FIGS. In FIG. 6, a vapor deposition mask 1 includes a mask main body 2 provided with a vapor deposition pattern 6 composed of a large number of independent vapor deposition through holes 5. The mask main body 2 includes nickel alloys such as nickel and nickel cobalt, copper, and the like. It is formed by electroforming using an electrodeposited metal as a raw material. In FIG. 9, the vapor deposition mask 1 has a square shape of 500 mm × 400 mm, and includes a plurality of mask bodies 2 therein. Each mask body 2 is formed in a square shape of 50 × 40 mm, and includes a pattern formation region 4 therein. In the pattern formation region 4, a vapor deposition pattern 6 for forming a light emitting layer is formed which is composed of a large number of independent vapor deposition through holes 5.

The mask body 2 has a first metal layer 13 and a second metal layer 16. Specifically, as shown in FIG. 6, the second metal layer 16 is formed so as to cover the upper surface and the side surface of the first metal layer 13, and the first metal layer 13 and the second metal layer between the vapor deposition through holes 5. The cross-sectional shape of 16 (mask body 2) is formed in a stepped shape. In this way, by forming the second metal layer 16 so as to cover the surface of the first metal layer 13, the first metal layer 13 and the second metal layer 16 can be compared with a configuration in which the first metal layer 13 and the second metal layer 16 are simply laminated. Since the surface area of contact between the layer 13 and the second metal layer 16 is increased, a laminated structure in which the first metal layer 13 and the second metal layer 16 are firmly adhered can be obtained. The thickness of the mask body 2 is preferably in the range of 10 to 100 μm, and is set to 20 μm in this embodiment. Specifically, the thickness t1 of the first metal layer 13 is preferably in the range of 5 to 90 μm and is set to 16 μm in this embodiment, and the thickness t2 of the second metal layer 16 is preferably 10 μm or less. In the example, it was set to 4 μm. The upper surface of the first metal layer 13 indicates the vaporization source side, and the side surface of the first metal layer 13 indicates the surface facing the vapor deposition through hole 5.

Each vapor deposition through hole 5 is formed by communicating a small hole portion 5a with a large hole portion 5b formed larger than the opening shape of the small hole portion 5a. For example, the small hole portion 5a is a flat surface. The front and rear length dimensions are 150 m and the left and right width dimensions are 50 μm, and the large hole portion 5 b has a front and rear length dimension of 300 μm and a left and right width dimensions of 150 μm. Have. The small hole portion 5a is on the deposition target substrate 30 side, and the large hole portion 5b is on the vaporization source side. These vapor deposition through holes 5 are arranged in parallel in the front-rear direction or the left-right direction to form a vapor deposition pattern 6. Thus, the vapor deposition through-hole 5 is configured by the small hole portion 5a and the large hole portion 5b by forming the first metal layer 13 and the second metal layer 16 in a step shape in a cross-sectional view. Thus, the large hole portion 5b makes it possible to accept an organic material from a vaporization source at a wide angle, and to deal with an organic material incident from an oblique direction. Can contribute to formation. Moreover, each of the upper edge peripheral portions (vaporization source side peripheral portions) of the second metal layer 16 facing the peripheral surfaces of the large hole portions 5b and the small hole portions 5a is formed in an R shape, so that the large hole portions 5b and the small hole portions 5a are formed. As a result, it is possible to eliminate the shadow caused by the upper edge of the light source as much as possible, to further widen the acceptance angle of the organic material, and to obtain a light emitting layer having a more uniform height. In addition, the longitudinal cross-sectional view of FIG. 1 does not show the actual state of the vapor deposition pattern 6, but schematically shows it.

The mask body 2 can be equipped with a frame 3 for reinforcement of the mask body 2. The frame 3 is made of a material having a low coefficient of thermal expansion such as an invar material that is a nickel-iron alloy or a super invar material that is a nickel-iron-cobalt alloy. The frame 3 is a molded product that is thicker than the mask main body 2, and is joined to the outer peripheral edge 4 a of the pattern forming region 4 of the mask main body 2 by the metal layer 9 in an integral manner. Here, as shown in FIG. 9, 30 mask bodies 2 are held by one frame body 3. That is, the frame 3 has 30 openings 3a aligned on the plate surface, and one mask body 2 is attached to each opening 3a. The frame 3 is provided with an opening 3a corresponding to the mask body 2 and is formed in a flat plate shape. The thickness dimension of the frame 3 is, for example, about 100 to 500 μm, and is set to 250 μm in this embodiment.

6, reference numeral 9 denotes a metal layer that joins the outer peripheral edge 4 a of the pattern formation region 4 of the mask body 2 and the frame 3. The metal layer 9 is formed by a plating method and is made of an electroformed metal such as nickel or a nickel-cobalt alloy. Thus, if the outer peripheral edge 4a of the pattern forming region 4 of the mask body 2 and the frame 3 are joined by the metal layer 9, it is inevitable in the form in which the mask body 2 and the frame 3 are joined by an adhesive. There is no problem such as deterioration of the adhesive caused by the organic solvent used in the cleaning treatment acting on the adhesive, and a good bonding state between the mask body 2 and the frame 3 is obtained. It can be well maintained for a long time.

In addition, in this embodiment, as shown in FIGS. 6 to 8, a large number of through holes 21 are provided over the entire circumference of the outer peripheral edge 4 a of the pattern formation region 4 of the mask body 2, and pattern formation of the mask body 2 is performed. It is noted that the outer peripheral edge 4a of the region 4 and the frame 3 are integrally joined via the metal layer 9 formed so as to fill the through hole 21. That is, the metal layer 9 according to the present embodiment includes the upper surface of the outer peripheral edge 4 a of the pattern formation region 4, the upper surface of the frame body 3, the side surface facing the pattern formation region 4, and the gap portion between the mask body 2 and the frame body 3. In addition, attention is paid to the fact that the growth and formation are further performed so as to fill the through holes 21. As described above, when the mask body 2 and the frame body 3 are bonded via the metal layer 9 grown and formed so as to fill the through hole 21, the bonding strength between the two and the third layer can be improved. Therefore, inadvertent dropping or misalignment of the mask body 2 with respect to the frame 3 can be reliably suppressed. Accordingly, it is possible to improve the reproduction accuracy and vapor deposition accuracy of the light emitting layer.

Further, as shown in FIGS. 7 and 8, the four corners of the mask body 2 are chamfered in plan view. According to this, when the mask main body 2 thermally expands, it can suppress that stress concentrates on a corner | angular part. 7 and 8, the vapor deposition through hole 5 is not constituted by the small hole portion 5a and the large hole portion 5b, but is expressed by a straight shape.

10 to 12 show a method for manufacturing a vapor deposition mask according to this embodiment. First, as shown in FIG. 10A, a photoresist layer 11 is formed on the surface of the mother die 10. As the mother mold 10, a material having conductivity and a low-temperature expansion coefficient is desirable, and examples thereof include 42 alloy, Invar, and SUS430 (stainless steel). The photoresist layer 11 is formed by laminating one or several negative photosensitive dry film resists according to a predetermined height by thermocompression bonding.

Next, after closely attaching a pattern film (glass mask) having a light transmitting hole corresponding to the position of the large hole portion 5b of the vapor deposition through hole 5 and the through hole 21 for increasing the adhesive strength on the photoresist layer 11, By exposing to ultraviolet light, performing exposure, developing and drying, and dissolving and removing unexposed portions, as shown in FIG. 10 (b), the large holes 5b of the vapor deposition through holes 5 and A primary pattern resist 12 having a straight resist body 12 a corresponding to the position of the through hole 21 was formed on the matrix 10.

Next, the mother die 10 is put in an electroforming tank bathed under a predetermined condition, and the resist member 12a of the mother die 10 is within the height range of the previous resist member 12a as shown in FIG. The first metal layer 13 was formed by electroforming a nickel-cobalt alloy on the uncovered surface (exposed region), preferably in the range of 5 to 90 μm thick, in this example 16 μm thick. After the first metal layer 13 is formed, the primary pattern resist 12 (resist body 12a) is removed as shown in FIG. Here, the first metal layer 13 may have a two-layer structure of a bright nickel layer and a dull nickel layer. In this case, an electrodeposition layer made of bright nickel is electroformed on the mother die 10 by 5 μm, and an electrodeposition layer made of non-gloss nickel is then electroformed by 11 μm. In this way, if the first metal layer 13 has a two-layer structure, the bright nickel is difficult to adhere to the mother die 10, and the process of removing the last vapor deposition mask 1 from the mother die 10 can be carried out efficiently. . In addition, in FIG.10 (d), the code | symbol 13a shows the 1st metal layer formed between the mask main bodies 2 * 2.

Subsequently, as shown in FIG. 11A, a photoresist layer 14 was formed on the entire surface of the mother die 10 including the formation region of the first metal layer 13. The photoresist layer 14 is formed by thermocompression bonding by laminating one or several negative photosensitive dry film resists at a predetermined height.

Next, after a pattern film having a light transmitting hole corresponding to the position of the small hole portion 5a of the vapor deposition through hole 5 is adhered, exposure is performed by irradiating with ultraviolet light, and each process of development and drying is performed. By removing the portion, as shown in FIG. 11B, a secondary pattern resist 15 having a straight resist body 15 a corresponding to the position of the small hole portion 5 a of the vapor deposition through hole 5 was formed on the matrix 10. .

Next, the mother die 10 is put in an electroforming tank bathed under a predetermined condition, and as shown in FIG. 11C, the mother die 10 and the first metal layer are within the range of the height of the resist body 15a. The second metal layer 16 was formed by electroforming a nickel-cobalt alloy on the surface (exposed region) not covered with the resist body 16a, preferably with a thickness of 10 μm or less, in this embodiment 4 μm. . At this time, the second metal layer 16 formed in a portion facing the end (top or root) of the first metal layer 13 has an R shape. Moreover, the edge part of the 2nd metal layer 16 which faces the vapor deposition through-hole 5 also becomes R shape. In addition, the curvature of R (R) concerned can obtain desired R (R) by adjusting the thickness of the second metal layer 16. Then, by removing the secondary pattern resist 15 (resist body 15a), as shown in FIG. 11D, the vapor deposition pattern 6 composed of a large number of independent vapor deposition holes 5, and the entire outer peripheral edge of the vapor deposition pattern 6 Thus, a mask body 2 provided with through holes 21 for increasing the bonding strength was obtained. Each corner of the mask body 2 is formed in a chamfered shape in plan view as shown in FIGS. In FIG. 11D, reference numeral 16a indicates a second metal layer formed between the

mask bodies

2 and 2, and is formed on the first metal layer 13a.

Subsequently, as shown in FIG. 12A, a photoresist layer 17 was formed on the entire surface of the mother die 10 including the portions where the first metal layer 13 and the second metal layer 16 (mask body 2) were formed. The photoresist layer 17 is formed by thermocompression bonding of one or several negative photosensitive dry film resists having a predetermined height in the same manner as described above. Next, after a pattern film having a light transmitting hole corresponding to the pattern forming region 4 was adhered, exposure was performed by irradiating with ultraviolet light. Thus, after obtaining the photoresist layer 17 in which the portion related to the pattern formation region 4 is exposed (17a) and the other portions are not exposed (17b), as shown in FIG. On 10, the frame 3 was disposed so as to surround the first metal layer 13 and the second metal layer 16. Here, the frame 3 was temporarily fixed on the mother die 10 by using the adhesiveness of the unexposed photoresist layer 17b.

Next, as shown in FIG. 12C, the unexposed photoresist layer 17b exposed on the surface was dissolved and removed to form a tertiary pattern resist 18 having a resist body 18a covering the pattern formation region. At this time, the unexposed photoresist layer 17 b existing on the lower surface of the frame 3 remains on the mother die 10.

Next, as shown in FIG. 12D, the upper surface of the second metal layer 16 exposed on the surface related to the outer peripheral edge 4 a of the pattern formation region 4, the matrix exposed between the frame 3 and the second metal layer 16. 10, on the surface of the frame 3, and in the through hole 21, an electrodeposited metal is electroformed to form the metal layer 9, and the metal layer 9 forms the first electrodeposited layer 13 and the second metal layer 16 ( The mask body 2) and the frame 3 were joined together. Before forming the metal layer 9, the first electrodeposition layer 13 around the through hole 21, specifically the inner wall surface of the through hole 21 and the upper surface of the first electrodeposition layer 13 around the through hole 21. By applying a treatment such as acid dipping, electrolytic treatment, strike plating, etc., the bonding strength between the treated portion and the metal layer 9 can be improved.

Finally, after the first metal layer 13, the second metal layer 16, and the metal layer 9 are peeled from the matrix 10, the first metal layer 13a existing on the lower surface of the frame body 3 is peeled from these metal layers, and the tertiary By removing the pattern resist 18 and the unexposed photoresist layer 17b, an evaporation mask 1 as shown in FIG. 6 was obtained.

(Third embodiment)
A vapor deposition mask according to a third embodiment of the present invention will be described with reference to FIGS. The mask main body 2 (deposition mask 1) in each of the above embodiments uses a conductive substrate as a matrix and is manufactured by electroforming after forming a pattern resist on the surface. It can also be manufactured. FIG. 13 and FIG. 14 show a method for manufacturing a vapor deposition mask according to the present embodiment, and each step of the manufacturing method will be described below.

First, as shown in FIG. 13A, a mother die 40 on which a metal film 41 is formed is prepared. For the mother die 40, for example, an insulating substrate such as a glass plate or a resin plate is used. The metal film 41 is made of a conductive metal such as chromium or titanium. The metal film 41 is formed by depositing a metal film on the entire surface of the mother die 40 by sputtering, forming a resist pattern using a photolithography technique, etching away the metal film exposed from the resist pattern, and removing the resist pattern. By removing, the metal film 41 is patterned on the surface of the mother die 40. A first metal layer 44 and a second metal layer 45 described later are formed on the metal film 41 thus patterned, and the space between the metal films 41 corresponds to the position of the small hole portion 5a of the vapor deposition through hole 5. In this embodiment, a glass plate is used as the matrix 40 and chromium is used as the metal film 41, and the thickness of the metal film 41 is 1 μm or less.

Next, as shown in FIG. 13B, a photoresist layer 42 is formed on the surface of the mother die 40. The photoresist layer 11 is formed by laminating one or several negative photosensitive dry film resists according to a predetermined height by thermocompression bonding.

Next, after a pattern film (glass mask) having a light transmitting hole corresponding to the formation position of the first metal layer 44 is adhered onto the photoresist layer 42, exposure is performed by irradiation with ultraviolet light, development, A pattern resist 43 having a straight resist body 43a corresponding to the position where the first metal layer 44 is formed, as shown in FIG. Formed on the mother mold 40.

Next, the mother die 40 is put in an electroforming bath that is bathed under a predetermined condition, and as shown in FIG. 14A, the resist member 43a of the mother die 40 is within the height range of the previous resist member 43a. The first metal layer 44 was formed by electroforming a nickel-cobalt alloy on the uncovered surface (exposed region), preferably in the range of 5 to 90 μm thick, in this embodiment 16 μm thick. Before forming the first metal layer 44, an oxide film, an organic film, a polymer film, or the like may be formed on the surface of the metal film 41 exposed from the resist body 43a.

Next, as shown in FIG. 14B, the pattern resist 43 (resist body 43a) is removed.

Next, the mother die 40 is placed in an electroforming tank bathed under predetermined conditions, and as shown in FIG. 14 (c), a nickel-cobalt alloy is formed on the surface of the metal film 41 and the first metal layer 44, preferably 10 μm. Thereafter, the second metal layer 45 was formed by electroforming with a thickness of 4 μm in the present embodiment. At this time, the second metal layer 45 formed in a portion facing the ends (the top and the base) of the metal film 41 and the first metal layer 44 has an R shape. Thereby, the shadow by the upper-end periphery of the large hole part 5b and the small hole part 5a can be eliminated as much as possible. The curvature of R (R) can be obtained by adjusting the thickness of the second metal layer 45. In addition, an oxide film, an organic film, a polymer film, or the like may be formed on the surfaces of the metal film 41 and the first metal layer 44 before the second metal layer 45 is formed.

Finally, by peeling the first metal layer 44 and the second metal layer 45 from the mother die 40, the vapor deposition through hole 5 having the small hole portion 5a and the large hole portion 5b as shown in FIG. 15 was provided. A mask body 2 (deposition mask 1) was obtained.

The mask main body 2 in the present embodiment has a minute recess 50 on the back surface side (deposition target substrate 30 side) of the first metal layer 44. The shape of the minute recess 50 is formed corresponding to the shape of the metal film 41. Since the micro dent 50 is present, the outer peripheral portion of the micro dent 50 (the peripheral portion of the small hole portion 5a on the vapor deposition substrate 30 side) has a protruding shape, and thus the vapor deposition mask 1 is mounted on the vapor deposition substrate 30. When vapor deposition is performed, the vapor deposition mask 1 can be placed on the vapor deposition substrate 30 with good contact by the line contact between the vapor deposition through hole 5 of the mask body 2 and the vapor deposition substrate 30, and vaporized from the vaporization source. It is possible to prevent the organic material from bleeding and vapor deposition on the back surface of the vapor deposition mask 1.

In each of the above embodiments, the metal layer 9 is formed in a state where a tension is applied so that the tensile stress F1 acts to draw the first metal layer 13 and the second metal layer 16, that is, the mask body 2 toward the frame 3 side. can do. The application of such tensile stress can be realized by adjusting the content ratio of carbon in the second type brightener added to the electroforming tank. Thereby, since the first metal layer 13 and the second metal layer 16 are stretched in a state in which a tensile stress tensioned to the frame body 3 is applied via the metal layer 9, the ambient temperature during the vapor deposition operation Even with the rise, the expansion of the mask body 2 due to the difference in thermal expansion coefficient with the frame 3 is absorbed, and the deposition mask 1 is less likely to vary in dimensional accuracy due to heat. It can contribute to improvement. Furthermore, the influence of heat can be suppressed as much as possible by adopting a material that hardly undergoes thermal expansion as the frame 3 that holds the mask body 2.

In each of the above embodiments, the mask body 2, that is, the first metal layer 13 and the second metal layer 16 are formed in a state where a tension is applied so that the stress F 2 in the direction in which the mask body 2 contracts inwardly acts. You can also Such tensile stress F2 is caused by the temperature difference between the temperature of the electroformed layer (40 to 50 ° C.) and the normal temperature (20 ° C.) when the first metal layer 13 and the second metal layer 16 are formed. This can be realized by causing the first metal layer 13 and the second metal layer 16 to contract. More specifically, after using a low-temperature expansion coefficient material such as 42 alloy, Invar, or SUS430 (stainless steel) as the matrix 10, the first metal layer 13 and the second metal in the electroformed layer at 40 to 50 ° C. When the layer 16 is formed, the first metal layer 13 such as nickel or nickel alloy and the second metal layer 16 have a higher expansion coefficient than the mother die 10, so that stress that tends to expand acts on the mother die ( However, the expansion of the metal layer 9 at this time is regulated by the mother die 10). However, at a normal temperature (20 ° C.) lower than the electroforming layer temperature (40 to 50 ° C.), the first metal layer 13 and the second metal layer 16 tend to shrink inward, and thus peel off from the mother die 10. As a result, the first metal layer 13 and the second metal layer 16, that is, the mask main body 2 is subjected to a tensile stress F 2 on the frame body 3. As a result, the mask body 2 can be stretched with a pin having no wrinkles, so that the expansion of the mask body 2 itself due to the difference in the thermal expansion coefficient with the frame 3 can be achieved even when the ambient temperature rises during the vapor deposition operation. Absorbing, the deposition mask 1 is less likely to vary in dimensional accuracy due to heat, and can contribute to improvement in the light emitting layer reproduction accuracy and vapor deposition accuracy. In addition, the formation of the through holes 21, the corners of the mask main body 2 are chamfered, and the frame body 3 itself that holds the mask main body 2 is made of a material that hardly thermally expands, thereby causing variations in dimensional accuracy due to heat. This can be further reduced by improving the reproduction accuracy and vapor deposition accuracy of the light emitting layer.

Further, in each of the above embodiments, there is a case where peeling occurs from the interface between the

first metal layers

13 and 44 and the second metal layers 16 and 45 when the mother die is peeled off. In order to prevent this, the surface activation treatment (acid immersion, cathode) is performed on the surface of the first metal layer 13/44 before the second metal layer 16/45 is formed on the first metal layer 13/44. Electrolysis, chemical etching, strike plating, etc.) may be performed. In addition, as shown in FIG. 16, an overhang 60 is formed on the upper edge of the

first metal layer

13, 44, and the

second metal layer

16, 45 is formed on the

first metal layer

13, 44. Thus, peeling between the

first metal layers

13 and 44 and the second metal layers 16 and 45 can be prevented. When the

first metal layers

13 and 44 are formed, the overhanging portion 60 performs electroforming, so-called overhang, exceeding the thickness of the resist

bodies

12a and 43a, so that the upper ends of the

first metal layers

13 and 44 are formed. It is possible to obtain a shape in which an overhanging portion 60 having a cross-sectional ridge shape is integrally formed on the periphery.

The number of mask main bodies 2 that the vapor deposition mask 1 has is not limited to that shown in the above embodiments. Alternatively, the second metal layer 16 may be formed after the first metal layer 13 is polished and smoothed before or after removing the primary pattern resist 12. Alternatively, before or after removing the secondary pattern resist 15, the second metal layer 16 may be polished and smoothed, and then the tertiary pattern resist 18 may be formed in the pattern formation region 4. As a material of the frame 3, in addition to a metal material such as an invar material shown in the embodiment, a material having a low coefficient of thermal expansion as close to glass as a deposition substrate as much as possible, such as glass or ceramic, is used. You can choose. In this case, it is necessary to impart conductivity to at least the surface of these materials. Furthermore, the formed vapor deposition mask 1 may be pulled and a fixed frame such as stainless steel or aluminum may be separately fixed to the outer periphery by a known method. However, when each mask body 2 is held on the frame 3 with a tension applied via the metal layer 9 as in the embodiment, a so-called frame-less operation requiring no fixed frame is possible.

DESCRIPTION OF SYMBOLS 1 Deposition mask 2 Mask main body 3 Frame body 4 Pattern formation area 4a The outer periphery of a pattern formation area 5 Deposition through-hole 6 Deposition pattern 9 Metal layer 10 Master mold 12 Primary pattern resist 13 First metal layer 15 Secondary pattern resist 16 Second Metal layer 17 Pattern film 18 Tertiary pattern resist 21 Through hole 40 Master mold 43 Pattern resist 44 First metal layer 45 Second metal layer 50 Micro-dent 60 Overhang

Claims

A vapor deposition mask provided with a vapor deposition pattern 6 comprising a large number of independent vapor deposition through holes 5 on the mask body 2,
The vapor deposition through hole 5 communicates with a small hole portion 5a located on the vapor deposition substrate 30 side and a large hole portion 5b located on the vaporization source side and formed larger than the opening shape of the small hole portion 5a. The vapor deposition mask characterized by being made.
The mask body 2 includes first metal layers 13 and 44 and second metal layers 16 and 45, and the second metal layers 16 and 45 so as to cover the upper surfaces and side surfaces of the first metal layers 13 and 44. The vapor deposition mask according to claim 1, wherein a cross-sectional shape of the mask body 2 between the vapor deposition through holes 5 is stepped.
3. The vapor deposition mask according to claim 2, wherein each of the upper peripheral edges of the second metal layers 16 and 45 facing the peripheral surfaces of the large hole portion 5 b and the small hole portion 5 a has an R shape.
The vapor deposition pattern 6 is formed in the pattern formation region 4, and a frame 3 made of a material having a low thermal expansion coefficient is disposed on the outer periphery of the mask main body 2, and the outside of the pattern formation region 4 of the mask main body 2. 4. The vapor deposition mask according to claim 1, wherein a peripheral edge 4 a and the frame body 3 are integrally joined to each other through a metal layer 9.
A method of manufacturing a vapor deposition mask in which a vapor deposition pattern 6 including a large number of independent vapor deposition through holes 5 is provided in the mask body 2,
Forming a primary pattern resist 12 having a resist body 12a on the surface of the matrix 10;
Forming a first metal layer 13 on the matrix 10 using the primary pattern resist 12;
Forming a secondary pattern resist 15 having a resist body 15a on the surface of the matrix 10;
Forming a second metal layer 16 on the matrix 10 and the first metal layer 13 using the secondary pattern resist 15;
And a step of integrally peeling the first metal layer 13 and the second metal layer 16 from the matrix 10.
A method of manufacturing a vapor deposition mask in which a vapor deposition pattern 6 including a large number of independent vapor deposition through holes 5 is provided in the mask body 2,
A step of preparing a mother die 40 on which a metal film 41 is patterned;
Forming a pattern resist 43 having a resist body 43a on the surface of the mother die 40;
Forming a first metal layer 44 on the metal film 41 using the pattern resist 43;
Forming a second metal layer 45 on the metal film 41 and the first metal layer 44;
And a step of integrally peeling the first metal layer 44 and the second metal layer 45 from the matrix 10.