JP2003107723A - Manufacturing method for metal mask and metal mask - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method for a metal mask by which dimension management in a manufacturing process is facilitated and many highly accurate metal masks can be manufactured with the same accuracy. SOLUTION: A Cr film 2 having a mask pattern 2a is formed on a surface of a glass substrate 1, then a dry film 4 is formed on the Cr film 2 and then the dry film 4 is exposed from the side of the glass substrate 1 with the Cr film 2 as a mask. Thus, the mask pattern 4a in the same shape as the mask pattern 2a is formed on the dry film 4. For the mask pattern, an end face is tapered. Then, a metal plating layer 6 is formed on the Cr film 2 and the metal plating layer 6 is peeled off and turned to the metal mask 7.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a manufacturing process of various electronic devices, particularly electroluminescence (EL).
The present invention relates to a metal mask manufacturing method suitable for use in a device manufacturing process.

[0002]

2. Description of the Related Art Conventionally, electroluminescence (E
In the process of manufacturing an electronic device such as L) element, a metal mask in which a desired pattern is formed on a metal film such as chromium or stainless steel is used to form a vapor deposition film of various metals.

This metal mask is manufactured by the following method.

(1) A resist film is formed on a thin metal plate such as a stainless thin plate, the resist film is exposed to form a desired mask pattern, and the stainless thin plate is etched using this mask to form a desired pattern. It is used as a metal mask.

(2) A resist film is formed on the surface of a conductive material such as stainless steel, the resist film is exposed to form a desired mask pattern, and then a metal plating layer is formed on the upper surface of the conductive material by electroplating. And the metal plating layer is peeled off from the upper surface of the conductive material to obtain a metal mask having a desired pattern.

[0006]

By the way, in the conventional metal mask manufacturing method, since the accuracy of the mask at the time of exposure and the accuracy of etching greatly influence the pattern accuracy of the final product, the metal mask, In this case as well, it is necessary to manage the dimensional accuracy of the pattern with high accuracy. However, in the conventional method, since the metal mask is formed on a metal such as chromium or stainless steel having a large linear expansion coefficient, the dimensional accuracy of each metal mask produced by a slight temperature difference generated in the metal material is high. However, there is a problem that it is difficult to obtain metal masks having the same dimensional accuracy.

When a large number of metal masks with high dimensional accuracy and small dimensional variation are required, the material forming the metal mask, stainless steel used as a base material when manufacturing the metal mask, etc. However, there is a problem in that it is difficult to stably manufacture a metal mask having the same dimensional accuracy because it is easily affected by changes in dimensions of the metal material.

For example, when a large number of metal masks having the same dimensional accuracy of the mask pattern are produced, a highly accurate and uniform metal mask can be obtained at the beginning of production, but the dimensions change with time as they are produced. As a result, the dimensional accuracy gradually decreases, and in the final stage, not only the dimensional accuracy decreases, but also the dimensional variation increases. Therefore, it is difficult to obtain a large number of highly accurate metal masks with small variations.

The present invention has been made in view of the above circumstances, and is a metal mask in which dimensional control is easy in the manufacturing process and a large number of high-precision metal masks can be manufactured with the same accuracy. It is intended to provide a manufacturing method.

[0010]

In one embodiment of the present invention, a conductive film having a mask pattern is formed on one main surface of a transparent plate or transparent film, then a photosensitive film is formed on the conductive film, and then a photosensitive film is formed. Exposing the photosensitive film from the transparent plate or transparent film side using the conductive film as a mask to form a mask pattern having the same shape as the mask pattern on the photosensitive film, and then forming a metal plating layer on the conductive film. Formed,
In the method of manufacturing a metal mask, wherein the metal plating layer is peeled off to form a metal mask, the mask pattern formed on the second resist film becomes narrower as the space on the conductive film becomes more distant from the conductive film. It is characterized by including an opening.

In another aspect of the present invention, a base material having a conductive film formed on one main surface of a transparent plate or a transparent film is prepared, a first resist film is formed on the conductive film of the base material, and then the first resist film is formed. Forming a first mask pattern on the first resist film, etching the conductive film using the resist film as a mask, and then removing the first resist film,
Then, a second resist film is formed on the conductive film, and the second resist film is exposed from the transparent plate or transparent film side using the conductive film as a mask to form a second resist film on the second resist film. A method of manufacturing a metal mask, comprising forming a mask pattern, forming a metal plating layer on the conductive film by plating, and peeling the metal plating layer to obtain a metal mask, which is formed on the second resist film. The mask pattern is characterized in that the space on the conductive film includes an opening that becomes narrower as the space from the conductive film increases.

Further, the second resist film is preferably a dry film.

Further, it is preferable that the mask pattern is formed on the first resist film by an electron beam exposure method or a laser beam exposure method.

The mask pattern is preferably formed on the first resist film by an exposure method using a master mask.

The conductive film is preferably made of a metal film containing chromium as a main component.

The conductive film is preferably made of an ITO film.

Further, another aspect of the present invention relates to a metal mask manufactured by the above manufacturing method.

Further, according to another aspect of the present invention, a metal mask obtained by peeling a metal plating layer formed on a conductive film having a predetermined mask pattern formed on an insulating substrate, Has an opening that expands in a tapered shape from the peeled surface toward the opposite side, and the widest opening is on the peeled surface side.

According to the present invention, a conductive film having a mask pattern is formed on one main surface of a transparent plate or transparent film,
Next, a photosensitive film is formed on the conductive film, and then the photosensitive film is exposed from the transparent plate or transparent film side using the conductive film as a mask to form a mask pattern having the same shape as the mask pattern on the photosensitive film. Form. This allows
A photosensitive film can be formed on a transparent plate or a transparent film in a region without a conductive film. Therefore, it is easy to select a material having a small coefficient of thermal expansion, such as glass, as the transparent plate or transparent film, and the dimension of the mask pattern does not change with time. This facilitates dimensional control of the mask pattern in the metal mask manufacturing process.

Further, by forming a metal plating layer on the conductive film using the photosensitive film as a mask and peeling off the metal plating layer, a metal mask having the same pattern as the mask pattern formed on the photosensitive film can be easily formed. Can be obtained.

Here, by repeating the process of forming a metal plating layer on the conductive film and peeling off the metal plating layer, a large number of high precision metal masks,
In addition, it is possible to manufacture with the same accuracy.

Further, according to the present invention, a conductive film having a mask pattern is formed on one main surface of the insulating substrate, and then a metal plating layer having a mask pattern having the same shape as the mask pattern is formed on the conductive film. It is formed and the metal plating layer is peeled off to form a metal mask. As a result, a material having a small coefficient of thermal expansion such as glass or ceramic can be used as the insulating substrate. Therefore, the dimension control of the mask pattern in the metal mask manufacturing process becomes easy. Further, according to this method, the process is simplified, so that the manufacturing cost can be reduced.

Further, since the side surface of the opening of the metal mask is tapered, the accuracy of the mask pattern can be improved. In particular, by forming the metal mask so that the opening is minimized on the side close to the conductive film, the mask pattern becomes exactly the same as the conductive film.

By forming the photosensitive film in a tapered shape, a metal mask having a tapered opening can be easily obtained.

[0025]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a metal mask manufacturing method of the present invention will be described with reference to the drawings.

[First Embodiment] A method of manufacturing a metal mask for vapor deposition for an EL device according to a first embodiment of the present invention will be described with reference to FIG.

First, as shown in FIG. 1A, a conductive material, for example, C having a thickness of 0.1 μm is formed on the surface (one main surface) of the glass substrate 1 by vapor deposition or sputtering.
An r (chromium) film (conductive film) 2 is formed, and a thickness of, for example, 0.7 μm is formed on the Cr film 2 by spin coating or the like.
The photosensitive material (first resist film) 3 is formed.

Then, the mask pattern 3a is directly formed on the photosensitive material 3 by an electron beam exposure method, a laser beam exposure method or the like. Next, using this photosensitive material 3 as a mask, C
The r film 2 is etched to form a mask pattern 2a having the same shape as the mask pattern 3a on the Cr film 2 as shown in FIG. 1B, and then the photosensitive material 3 is peeled (removed). For this process, a generally known one can be appropriately selected and used. For example, in the electron beam exposure method and the laser beam exposure method described above, a predetermined area of the photosensitive material 3 is scanned with an electron beam or a laser beam, and the area is exposed. Further, the photosensitive material 3 may be exposed to light by irradiating light only on a predetermined area using a master mask.

Then, a thickness of 50 μm is formed on the Cr film 2.
Laminate (form) dry film 4 of
The dry film 4 is exposed by irradiating light 5 from the glass substrate 1 side using the film 2 as a mask. As a result, as shown in FIG. 1C, a mask pattern 4a having the same shape as the mask pattern 2a is formed on the dry film 4.

Then, as shown in FIG. 1D, after the Cr film 2 is pretreated, the Cr film 2 is electroplated to form, for example, Ni, Ni-Co alloy, Ni-W alloy, or the like. A metal plating layer 6 made of is formed. The metal plating layer 6 has a thickness of about 30 μm to 50 μm. Then, the metal plating layer 6 is peeled off to obtain a metal mask 7 having a mask pattern 7a having the same shape as the mask pattern 4a.

By repeating the steps of FIGS. 1C to 1D, a large number of high-precision metal masks 7,
Moreover, they can be manufactured with the same accuracy.

According to the metal mask manufacturing method of this embodiment, the Cr film 2 having the mask pattern 2a is formed on the surface of the glass substrate 1, the dry film 4 is laminated on the Cr film 2, and the Cr film 2 is laminated. The dry film 4 is exposed by irradiating the dry film 4 with light 5 from the glass substrate 1 side using the film 2 as a mask to form a mask pattern 4a having the same shape as the mask pattern 2a on the dry film 4. By forming the base (wall), it is possible to eliminate the change with time of the dimensions of the mask pattern. As a result, the dimension control of the mask pattern can be easily performed in the metal mask manufacturing process.

The coefficient of thermal expansion of the glass substrate 1 is 1 μm.
/ ° C, about 1/8 of stainless steel,
By using the glass substrate 1, deterioration of accuracy due to heat can be suppressed. Although various glass materials can be used, soda glass or the like is preferable because it is inexpensive. On the other hand, although quartz glass is expensive, it has advantages such as a low coefficient of thermal expansion, good light transmission, and scratch resistance.

Since the metal plating layer 6 is formed on the Cr film 2 by electroplating and then the metal plating layer 6 is peeled off, the metal mask 7 having the mask pattern 7a having the same shape as the mask pattern 4a is formed. Can be easily obtained.

By repeating this process, a large number of highly accurate metal masks 7 can be manufactured with the same accuracy.

Next, the glass substrate 1 on which the Cr film 2 is formed
About the procedure when manufacturing a metal mask using
This will be described in more detail with reference to FIG.

First, the glass substrate 1 on which the Cr film 2 is formed
The surface treatment is performed for removing contaminants such as residual metal plating layer 6 remaining on the surface (S11).
This surface treatment is carried out in a scrubber such as nitric acid (H
It is carried out by contacting with a 20% solution of NO ₃ ) for 5 minutes. Next, the surface is washed with a shower of water (S1
2). This washing is performed by, for example, performing a shower for about 30 seconds twice in a washing machine. After this washing, a drying process is performed (S13). This drying is performed, for example, by blowing hot air at 60 ° C. for 5 minutes with a dryer (dryer). After the completion of this drying process, preheating is performed (S14). This preheating is performed, for example, by maintaining the temperature at 45 ° C. for 5 minutes in the chamber.

In this way, when the glass substrate 1 on which the Cr film 2 is formed is cleaned and preheated, a dry film (dry film photoresist) 4 is laminated on the Cr film 2 ( S15). The lamination of the dry film is performed at 100 ° C. by using a dry film laminator, for example. The thickness of the dry film 4 is about 50 μm.

Next, the back surface of the dry film 4 is exposed (S16). That is, by irradiating the back surface of the glass substrate 1 with predetermined light (energy 80 mJ), the dry film 4 is exposed using the Cr film 2 as a mask. Then, develop the exposed dry film 4,
The portion not exposed to light is removed (S17). This development is carried out, for example, by contacting it with a 1% solution of sodium carbonate (Na ₂ CO ₃ ) for 40 seconds. By developing in this manner, the Cr film 2 is exposed, and the dry film 4 remains in other portions. That is, the Cr film 2 is
The dry film 4 has a thickness of about 0.1 μm, and the dry film 4 has a thickness of about 50 μm.

Next, the whole is dried by a dryer (S18). This drying is performed at 40 ° C. for about 5 minutes, for example. Then, it is checked with a microscope whether or not the remaining portion of the dried dry film 4 is appropriate (S19). If the result of this check is NG, the dry film 4 is removed (S20), and the process returns to S11.

On the other hand, if the determination in S19 is OK, Cr
Since the film 2 is exposed, after preheating (S21), C
A DC voltage is applied using the r film 2 as an electrode to electroplate the metal plating layer 6 on the Cr film 2 (S22). For example, nickel (Ni) is electroplated in a plating bath for 4 hours.

Here, in portions other than above the Cr film 2,
Since the dry film 4 remains, the metal plating layer 6 can be formed by using the wall of the dry film 4, and the shape of the metal plating layer 6 can be accurately defined.

Then, the Ni metal plating layer 6 is peeled off from the Cr film 2 as a shadow mask (metal mask) (S23). The glass substrate 1 having the Cr film 2 from which the metal mask is peeled off is washed with a chemical to remove the dry film 4 (S24), and the process is returned to S11.

The metal mask obtained in S23 is washed with water in a washing machine (S25) and dried by a dryer (S26), and then various measurements are performed in a measuring instrument (S27).

If the measurement in S27 is NG, the metal mask cannot be used and is discarded (S28). On the other hand, if the determination in S27 is OK, a color laser microscope or the like is further used to inspect the metal mask for defects such as holes (S29). Even if the determination in S29 is NG, the process proceeds to S28, and the metal mask is discarded.

On the other hand, if the judgment in S29 is also OK, the metal mask is packed (S3
0) and ship (S31).

Here, in S16, the dry film 4
By exposing the back surface of the glass substrate 1 by moving the glass substrate 1 when exposing the
It is preferable to form so that the area of the exposed dry film 4 gradually expands. That is, if the irradiated light is not completely parallel light, moving the glass substrate 1 causes the irradiated light to slightly go around to the back side of the Cr film 2 to expand the exposed area. Also, the emitted light is C
The same exposure can be performed by focusing near the r film 2 and then setting it so as to spread slightly. Furthermore, the glass substrate 1
The irradiation light may be provided with a diffractive plate or a scattering plate on the back side thereof to convert parallel rays into scattered light directed in various directions for exposure. This also allows the light passing through the opening of the Cr film 2 to spread from the opening to expose the dry film 4 to light.

Further, at the time of exposure, as shown in FIG. 3, the diffuse reflection plate 10 is arranged in the direction opposite to the glass substrate 1 of the dry film 4, and the light reflected by the diffuse reflection plate (diffusion board) 10 is dried. It is also preferable to irradiate the film 4. That is, with this configuration, the light once passing through the dry film 4 is reflected by the diffuse reflection plate 10,
The glass substrate 1 is irradiated again. Therefore, as the distance from the glass substrate 1 increases, the exposed area expands.

Further, by appropriately selecting the method of etching the dry film 4, such dry etching of the dry film 4 can be performed.

By doing so, in the development of S17, as shown in FIG. 4A, the dry film 4 having a larger area can be left upward. Therefore, as shown in FIG. 4B, the metal plating layer 6 formed by electroplating has a tapered side surface having the largest area on the Cr film 2 and the area decreasing toward the upper side. Therefore, as shown in FIG. 3, the peeled metal mask 7 made of the metal plating layer 6 has the same shape as the Cr film 2 with the smallest opening, and from there, in the thickness direction (upward in the drawing). The opening becomes larger toward you.

When such a metal mask is used, it is the smallest place of the opening that defines the opening.
This place is formed the same as the Cr film 2. Therefore,
A highly accurate metal mask can be obtained.

Furthermore, when such a metal mask is used as a vapor deposition mask, proper vapor deposition can be performed.
That is, as the EL panel becomes larger, the substrate for vapor deposition also becomes larger. If the opening of the metal mask is a straight hole when vapor deposition is performed on such a large substrate, a difference in vapor deposition amount tends to occur between the peripheral portion and the central portion. But,
Since the opening of the metal mask is tapered, it is possible to vaporize vaporized substances that fly obliquely in the peripheral portion, so that the vapor deposition amount can be made uniform. The metal mask is vapor-deposited with the side having the smaller opening as the substrate side. As a result, the deposition area itself can be kept accurate.

Note that S24 may be performed prior to the metal mask peeling step of S23. That is, as shown in FIG. 5, after the electroplating is performed in S22, the dry film 4 is removed (S24). Then, after the dry film 4 is removed, the metal mask 7 is peeled off (S23). Then, the glass substrate 1 is directly returned to the surface treatment of S11. In this case, the chemical used in S24 does not affect the metal mask 7.

[Second Embodiment] A method for manufacturing a vapor deposition metal mask for an EL device according to a second embodiment of the present invention will be described with reference to FIG.

First, as in the case of the manufacturing method of the first embodiment described above, as shown in FIG.
A photosensitive material (first resist film) 3 having a thickness of 0.7 μm, for example, is formed on the Cr film 2 having a thickness of 1 μm.

Next, the mask pattern 3a is directly formed on the photosensitive material 3 by an electron beam exposure method, a laser beam exposure method or the like. Next, using this photosensitive material 3 as a mask, C
The r film 2 is etched to form a mask pattern 2a having the same shape as the mask pattern 3a on the Cr film 2 as shown in FIG. 6B, and then the photosensitive material 3 is peeled (removed).

Then, as shown in FIG. 6C, this C
After subjecting the r film 2 to pretreatment, a metal plating layer 11 is formed on the Cr film 2 by electroplating. The metal plating layer 11 is made of, for example, Ni, Ni-Co alloy, Ni-W alloy, or the like, and the mask pattern 11a having the same shape as the mask pattern 2a is formed.

After that, as shown in FIG. 6D, the metal plating layer 11 is peeled off from the Cr film 2 and the mask pattern 2a is formed.
The metal mask 12 is formed with a mask pattern 12a having the same shape as the above.

By repeating the steps of FIGS. 6 (c) to 6 (d), a large number of metal masks 12 having the same accuracy can be manufactured by a simple process.

According to the method of manufacturing the metal mask of this embodiment, the metal plating layer 11 is formed on the Cr film 2 by electroplating.
Is formed, and then the metal plating layer 11 is formed from the Cr film 2.
Since the mask is peeled off, the dimension control of the mask pattern can be easily performed in the metal mask manufacturing process. Moreover, since the process is simplified, the manufacturing cost can be reduced.

FIG. 7 shows a procedure for manufacturing a metal mask using the glass substrate 1 on which the Cr film 2 is formed in the second embodiment.

As described above, in the second embodiment, the steps of forming the dry film 4 in layers, exposing, developing, etc. are not provided. Therefore, as compared with FIG. 2, the processes of S14 to S20 are omitted and the process of S24 is not performed. The remaining steps are basically performed under the same conditions as in the first embodiment.

Here, the electroplating of S22 is performed without the dry film 4. Therefore, the metal plating layer 11 is formed on the Cr film 2, but also extends laterally of the Cr film 2 as shown in FIG. Therefore, the shape of the metal mask obtained in S23 is not exactly the same as that of the Cr film 2. Therefore, in the second embodiment, when forming the Cr film 2, it is preferable to determine the dimensions in consideration of the fact that the opening is reduced by electroplating.

[Third Embodiment] In the above-described first embodiment, the mask pattern 4a serving as a guide for the metal plating layer 6 is formed using the dry film 4. Alternatively, a wet resist can be used. Figure 9
This process will be described based on (a) to FIG. 9 (d).

First, as shown in FIG. 9A, a Cr film 2 having a thickness of 0.1 μm, for example, is formed on the surface of the glass substrate 1 by vapor deposition or sputtering, and this Cr film is formed by spin coating or the like. 2 has a thickness of 0.7 μm, for example.
The photosensitive material 3 is formed.

Next, the mask pattern 3a is directly formed on the photosensitive material 3 by an electron beam exposure method, a laser beam exposure method or the like. Next, using this photosensitive material 3 as a mask, C
The r film 2 is etched to form a mask pattern 2a having the same shape as the mask pattern 3a on the Cr film 2 as shown in FIG. 9B.

Then, as shown in FIG. 9B, the second photosensitive material 8 is formed on the photosensitive material 3. The second photosensitive material 8 is in a liquid state and has mask patterns 2a and 3a.
Even during the opening of. Then, in this state, the back surface of the glass substrate 1 is exposed. As a result, the second photosensitive material 8 corresponding to the mask pattern 2a of the Cr film 2 is exposed.

After this exposure is completed, dry etching is performed from above. At this time, the second photosensitive material 8 is etched in the unexposed portion. Also,
The photosensitive material 3 is etched. Therefore, as shown in FIG. 9C, the exposed portion of the second photosensitive material is formed as the mask pattern 8a by dry etching.

Next, the Cr film 2 is formed by electroplating.
The metal plating layer 6 is formed thereon, and the metal mask 7 is obtained by peeling the metal plating layer 6.

According to this embodiment, the metal mask 7 can be obtained by using a wet photosensitive material without using a dry film.

The metal mask obtained as described above is preferably used as a vapor deposition mask for an EL panel. That is, the EL panel has an EL element for each pixel on a glass substrate. This EL device has an electron transport layer, a light emitting layer, and a hole transport layer between a cathode and an anode.
Further, the active type EL panel has a thin film transistor (TFT) corresponding to each EL element in order to control light emission in each EL element. In forming an EL panel having such an EL element, necessary material layers are sequentially laminated in a predetermined pattern. Since the smaller the pixel is, the higher the resolution can be displayed, the metal mask of the present invention is preferably used as the mask in the material stack.

In particular, by using a magnetic material such as nickel as the metal mask, the metal mask can be fixed by using magnetic force, and the metal mask can be easily fixed on the surface on which the materials are laminated. . Therefore, EL
The metal mask of the present invention is suitable as a vapor deposition mask for a panel.

Although the respective embodiments of the method for manufacturing a metal mask of the present invention have been described above with reference to the drawings, the specific configuration is not limited to the above-mentioned respective embodiments, and the gist of the present invention The design can be changed without departing from the above.

For example, in the metal mask manufacturing methods of the first and second embodiments, the glass substrate 1 is used, but the glass substrate 1 can be formed with a conductive material such as Cr. It suffices if it is sufficient, and in addition to the glass substrate 1, a heat resistant resin plate, a heat resistant resin film, or the like is also suitably used. Further, in the second embodiment, exposure is not performed from the back surface of the glass substrate 1. Therefore, an opaque substrate can be used instead of the glass substrate 1. For example, a ceramic substrate or the like can be adopted.

Further, instead of directly forming the mask pattern 3a on the photosensitive material 3 by an electron beam exposure method, a laser beam exposure method, etc., the photosensitive material 3 is exposed using a master mask, and the photosensitive material 3 is exposed to the mask pattern 3a. 3a may be formed.

Although the Cr film 2 and the photosensitive material 3 are sequentially formed on the surface of the glass substrate 1, a base material having the Cr film 2 formed on the surface of the glass substrate 1 is prepared in advance. Alternatively, the photosensitive material 3 may be formed on the Cr film 2 of this equipment. Further, instead of the Cr film 2, a Cr-based alloy containing Cr as a main component or an ITO film may be formed.

Although the dry film 4 is used here, the dry film 4 may be any material having photosensitivity, and for example, a liquid photosensitive resin such as a liquid resist may be used.

Further, the metal forming the metal plating layers 6 and 11 may be any metal that can be formed by electroplating, and is not limited to Ni, Ni-Co alloy and Ni-W alloy. For example, Ta (tantalum), M
It is possible to adopt o (molybdenum), W (tungsten), or the like.

Although electroplating is used in the above-mentioned embodiment, electroless plating may be used.

[0080]

As described above, according to the present invention,
A conductive film having a mask pattern is formed on one main surface of a transparent plate or transparent film, then a photosensitive film is formed on the conductive film, and then the photosensitive film is used as a mask for the transparent plate or transparent film. Exposure is performed from the film side to form a mask pattern having the same shape as the mask pattern on the photosensitive film. Accordingly, the photosensitive film can be formed on the transparent plate or the transparent film in a region where the conductive film is not provided. Therefore, it is easy to select a material having a small coefficient of thermal expansion, such as glass, as the transparent plate or transparent film, and the dimension of the mask pattern does not change with time. This facilitates dimensional control of the mask pattern in the metal mask manufacturing process.

Further, by forming a metal plating layer on the conductive film using the photosensitive film as a mask and peeling off the metal plating layer, a metal mask having the same pattern as the mask pattern formed on the photosensitive film can be easily formed. Can be obtained.

By repeating the process of forming a metal plating layer on the conductive film and peeling off the metal plating layer, a large number of high-precision metal masks are obtained.
In addition, it is possible to manufacture with the same accuracy.

Further, according to the present invention, a conductive film having a mask pattern is formed on one main surface of an insulating substrate, and then a metal plating layer having a mask pattern having the same shape as the mask pattern is formed on the conductive film. It is formed and the metal plating layer is peeled off to form a metal mask. As a result, a material having a small coefficient of thermal expansion such as glass or ceramic can be used as the insulating substrate. Therefore, the dimension control of the mask pattern in the metal mask manufacturing process becomes easy. Further, according to this method, the process is simplified, so that the manufacturing cost can be reduced.

Further, since the side surface of the opening of the metal mask is tapered, the accuracy of the mask pattern can be improved. In particular, by forming the metal mask so that the opening is minimized on the side close to the conductive film, the mask pattern becomes exactly the same as the conductive film.

By forming the photosensitive film in a tapered shape, a metal mask having a tapered opening can be easily obtained.

As described above, according to the present invention, the dimensional control in the manufacturing process is easy, a large number of highly accurate metal masks can be manufactured with the same accuracy, and the manufacturing cost can be reduced.

[Brief description of drawings]

FIG. 1 is a diagram showing a method of manufacturing a metal mask according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a detailed process of the first embodiment.

FIG. 3 is a diagram illustrating a process using a diffusion board.

FIG. 4 is a diagram illustrating a metal mask having a tapered opening.

FIG. 5 is a diagram showing a process of a modified example of the first embodiment.

FIG. 6 is a diagram showing a method for manufacturing a metal mask according to a second embodiment of the present invention.

FIG. 7 shows a detailed process of the second embodiment.

FIG. 8 is a diagram showing a shape of an opening of a metal mask according to a second embodiment.

FIG. 9 is a view showing the method of manufacturing the metal mask according to the third embodiment.

[Explanation of symbols]

1 glass substrate, 2 Cr film (conductive film), 2a mask pattern, 3 photosensitive material (first resist film), 3a
Mask pattern, 4 dry film, 4a mask pattern, 5 light, 6 metal plating layer, 7 metal mask,
7a mask pattern, 11 metal plating layer, 11a
Mask pattern, 12 metal mask, 12a mask pattern.

Claims (9)

[Claims] 1. A conductive film having a mask pattern is formed on one main surface of a transparent plate or transparent film, a photosensitive film is formed on the conductive film, and then the photosensitive film is used as a mask. By exposing from the transparent plate or transparent film side, a mask pattern having the same shape as the mask pattern is formed on the photosensitive film, then a metal plating layer is formed on the conductive film, and the metal plating layer is peeled off. A method of manufacturing a metal mask, wherein the mask pattern formed on the second resist film is a metal mask.
A method for manufacturing a metal mask, comprising: an opening portion in which a space on the conductive film is narrowed as the space is separated from the conductive film. 2. A base material having a conductive film formed on a main surface of a transparent plate or a transparent film is prepared, a first resist film is formed on the conductive film of the base material, and then the first resist is formed. Forming a first mask pattern on the film, etching the conductive film using the resist film as a mask, and then removing the first resist film;
Then, a second resist film is formed on the conductive film, and the second resist film is exposed from the transparent plate or transparent film side using the conductive film as a mask to form a second resist film on the second resist film. A method of manufacturing a metal mask, comprising forming a mask pattern, forming a metal plating layer on the conductive film by plating, and peeling the metal plating layer to obtain a metal mask, which is formed on the second resist film. The mask pattern
A method for manufacturing a metal mask, comprising: an opening portion in which a space on the conductive film is narrowed as the space is separated from the conductive film. 3. The method according to claim 2, wherein the second resist film is a dry film. 4. The method according to claim 2, wherein the mask pattern is formed on the first resist film by an electron beam exposure method or a laser beam exposure method. 5. The method according to claim 2, wherein the mask pattern is formed on the first resist film by an exposure method using a master mask. 6. The method of manufacturing a metal mask according to claim 1, wherein the conductive film is a metal film containing chromium as a main component. 7. The method of manufacturing a metal mask according to claim 1, wherein the conductive film is an ITO film. 8. A metal mask manufactured by the manufacturing method according to claim 1. 9. A metal mask obtained by peeling off a metal plating layer formed on a conductive film having a predetermined mask pattern formed on an insulating substrate, wherein the metal mask is opposite to the peeled surface. A metal mask that has an opening that widens in a tapered shape toward the side, and the widest opening is on the surface side where the peeling is performed.