JP2017066440A - Method of manufacturing vapor deposition mask with substrate, method of manufacturing vapor deposition mask, and vapor deposition mask with substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a vapor deposition mask with substrate that can apply tension of proper value to a vapor deposition mask and implement plating processing efficiently, highly precisely and stably for production.SOLUTION: A method of manufacturing a vapor deposition mask device with a substrate comprises the processes of: forming, on a glass-made substrate 1, a resist pattern 3 for plating processing, the resist pattern 3 including multifaceted unit resist patterns 3B corresponding to a plurality of vapor deposition masks; cutting the glass-made substrate 1 into a plurality of stages of and a plurality of arrays of unit resist patterns 3B; and forming a vapor deposition mask 2 through plating processing using the unit resist patterns 3B as a mask.SELECTED DRAWING: Figure 5

Description

  The present invention relates to a method of manufacturing a deposition mask with a substrate that can apply an appropriate value of tension to the deposition mask, and a deposition mask with a substrate.

  Conventionally, a method of forming a thin film with a desired pattern by using a vapor deposition mask including through holes arranged in a desired pattern is known. In recent years, vapor deposition is sometimes used when a very expensive material is deposited, for example, when an organic material is vapor deposited on a product at the time of manufacturing an organic EL display device. In general, the vapor deposition mask can be manufactured by forming a through hole in a metal plate by etching using a photolithography technique (for example, Patent Document 1). However, it is difficult to obtain a mask having a thin film by etching a metal plate. For this reason, although it is considered to obtain a mask by plating, there is a risk of deformation if the plating mask is handled alone. In such a case, it is considered that a deposition mask with a substrate is formed by forming a plating mask on the substrate, and tension is applied to the deposition mask with a substrate. Furthermore, there is a need for a deposition mask with a substrate that is suitable for ultra-high definition displays.

JP 2004-39319 A

  The vapor deposition mask having such a configuration is bonded to a frame made of a metal material or the like, and thus a vapor deposition mask device including the vapor deposition mask and the frame is obtained. By the way, when adhering the vapor deposition mask to the frame, the vapor deposition mask is positioned on the frame and bonded after physically applying tension to the vapor deposition mask.

  On the other hand, it is also considered that the vapor deposition mask is produced by plating, but in this case as well, the work of uniformly applying tension to the vapor deposition mask when bonding the vapor deposition mask to the frame is not easy.

  In addition, when the plating mask is made of a single foil, the total pitch varies greatly due to variations in the internal stress of the plating, and it takes time or position to align the holes during stretching for large displays and small high-definition displays. The alignment itself could be difficult.

  The present invention has been made in consideration of such points, and can form a vapor deposition mask by plating, and can easily and surely apply an appropriate value of tension to the vapor deposition mask. Further, an object of the present invention is to provide a method for manufacturing a deposition mask with a substrate, a method for manufacturing a deposition mask, and a deposition mask with a substrate, which can efficiently carry out a plating process and are suitable for an ultra-high-definition display.

The present invention
A resist pattern for plating treatment on a glass substrate, the step of forming a resist pattern including a plurality of unit resist patterns arranged in multiple rows corresponding to a plurality of vapor deposition masks and arranged in multiple rows;
A step of cutting a plurality of unit resist patterns arranged in a plurality of rows and a plurality of rows of glass substrates,
A vapor deposition mask having a perforated region and a non-perforated region surrounding the perforated region is formed on the substrate on which the unit resist pattern is formed by cutting into unit resist patterns of a plurality of stages and a plurality of rows, using the unit resist pattern as a mask. And a step of forming by a plating process.

The present invention
A resist pattern for plating treatment on a glass substrate, the step of forming a resist pattern including a plurality of unit resist patterns multi-faced corresponding to a plurality of vapor deposition masks;
Cutting the glass substrate into individual unit resist patterns;
An evaporation mask having a perforated region and a non-perforated region surrounding the perforated region is formed on the substrate on which the unit resist pattern is formed by cutting each unit resist pattern by plating using the unit resist pattern as a mask. Forming a deposition mask with a substrate.

The present invention
A resist pattern for plating treatment on a glass substrate, the step of forming a resist pattern including a plurality of unit resist patterns multi-faced corresponding to a plurality of vapor deposition masks;
Cutting the glass substrate;
Forming a vapor deposition mask having a perforated region and a non-perforated region surrounding the perforated region on the substrate on which the unit resist pattern is formed by plating using the unit resist pattern as a mask;
And a step of peeling the glass substrate from the vapor deposition mask.

The method of manufacturing a vapor deposition mask according to the present invention includes:
A vapor deposition mask manufacturing method for manufacturing a vapor deposition mask in which a plurality of through holes are formed,
A first film forming step of forming a first metal layer provided with a first opening in a predetermined pattern in a region that includes a plurality of multi-sided deposition masks on an insulating substrate;
A resist forming step of forming a resist pattern on the substrate and the first metal layer with a predetermined gap;
Cutting the substrate;
A plating treatment step of depositing the second metal layer on the first metal layer in the gap of the resist pattern;
A peeling step of peeling the glass substrate from a vapor deposition mask including the first metal layer and the second metal layer,
The resist forming step is performed such that the first opening of the first metal layer is covered with the resist pattern, and the gap of the resist pattern is located on the first metal layer.
In the step of cutting the substrate in the above-described method for manufacturing a vapor deposition mask, in each step that includes a plurality of vapor deposition masks that are multi-faced by a plurality of steps and a plurality of rows, a plurality of surfaces are arranged by a step and a plurality of rows. Each region that includes a plurality of attached deposition masks, each region that includes a plurality of deposition masks that are multi-faced in a plurality of stages and in a row, or include only one deposition mask You may cut | disconnect the said board | substrate for every area | region which becomes.

The method of manufacturing a vapor deposition mask according to the present invention includes:
A vapor deposition mask manufacturing method for manufacturing a vapor deposition mask in which a plurality of through holes are formed,
Forming a conductive pattern in which a first opening is provided in a predetermined pattern in a region that includes a plurality of multi-sided vapor deposition masks on an insulating substrate; and forming the conductive pattern A first film forming step comprising: cutting the cut substrate; and a first plating treatment layer for depositing a first metal layer on the conductive pattern of the cut substrate;
A second film-forming step of forming a second metal layer provided with a second opening communicating with the first opening on the first metal layer of the cut substrate;
A peeling step of peeling the combination of the first metal layer and the second metal layer from the substrate,
The second film forming step includes a resist forming step of forming a resist pattern on the substrate and the first metal layer with a predetermined gap, and on the first metal layer in the gap of the resist pattern. A plating treatment step for depositing the second metal layer,
The resist forming step is performed such that the first opening of the first metal layer is covered with the resist pattern, and the gap of the resist pattern is located on the first metal layer.
In the step of cutting the substrate in the above-described method for manufacturing a vapor deposition mask, in each step that includes a plurality of vapor deposition masks that are multi-faced by a plurality of steps and a plurality of rows, a plurality of surfaces are arranged by a step and a plurality of rows. Each region that includes a plurality of attached deposition masks, each region that includes a plurality of deposition masks that are multi-faced in a plurality of stages and in a row, or include only one deposition mask You may cut | disconnect the said board | substrate for every area | region which becomes.

  The present invention is a method for producing a deposition mask with a substrate, characterized in that adjacent unit resist patterns on a cut glass substrate are continuous with each other without any interval.

  The present invention is a method for manufacturing a deposition mask with a substrate, characterized in that adjacent unit resist patterns on a cut glass substrate are arranged at intervals.

  The present invention is a method for manufacturing a vapor deposition mask, characterized in that adjacent unit resist patterns on a cut glass substrate are continuous with each other without any interval.

  The present invention is a method for manufacturing a vapor deposition mask, characterized in that adjacent unit resist patterns on a cut glass substrate are arranged at intervals.

  The present invention includes a glass substrate, a plurality of vapor deposition masks formed by being plated on the substrate, and having a perforated region and a non-perforated region surrounding the perforated region. The vapor deposition mask is a vapor deposition mask with a substrate, wherein the vapor deposition mask is arranged in a plurality of stages and in a plurality of rows.

  The present invention includes a glass substrate, a vapor deposition mask that is formed by being plated on the substrate, and includes a perforated region and a plating layer that includes a non-perforated region surrounding the perforated region. It is the vapor deposition mask with a board | substrate characterized by the above-mentioned.

  According to the present invention, the vapor deposition mask can be formed by plating treatment, and an appropriate value of tension can be reliably applied to the vapor deposition mask, and the plating treatment can be performed efficiently and with high definition. It can be carried out stably in production, and a deposition mask with a substrate and a deposition mask suitable for an ultra-high definition display can be obtained.

1A, 1B, and 1C are diagrams for explaining an embodiment of the present invention, and are schematic perspective views showing a method of manufacturing a vapor deposition mask apparatus including a vapor deposition mask. FIG. 2 is a diagram for explaining a method of vapor deposition using a vapor deposition mask device. 3A to 3D are diagrams showing a method for manufacturing a substrate-attached vapor deposition mask. 4A to 4D are diagrams showing a method for manufacturing a deposition mask with a substrate. FIGS. 5A to 5E are cross-sectional views illustrating a method for manufacturing a substrate-attached vapor deposition mask. 6A to 6C are cross-sectional views illustrating a method for manufacturing a substrate-attached vapor deposition mask. FIG. 7 is a cross-sectional view showing a resist pattern formed on the substrate. 8A, 8B, 8C, and 8D are cross-sectional views showing a resist pattern as a comparative example formed on a substrate. FIGS. 9A and 9B are views showing the cross-sectional shape of a resist pattern based on the characteristics of the substrate. FIGS. 10A and 10B are operation diagrams showing proximity exposure. FIG. 11 is a plan view showing a substrate-attached vapor deposition mask. FIG. 12 is a plan view of a substrate with a resist pattern showing a modification of the present invention. FIG. 13 is a plan view of a deposition mask with a substrate showing a modification of the present invention. FIG. 14 is a plan view showing a deposition mask with a substrate including a fixing portion according to a modification of the present invention. 15A and 15B are plan views of a deposition mask with a substrate showing a modification of the present invention. 16 (a) and 16 (b) are plan views of a deposition mask with a substrate showing a modification of the present invention. 17 (a) and 17 (b) are plan views of a vapor deposition mask with a substrate showing a modification of the present invention. FIG. 18 is a cross-sectional view showing a pattern substrate including a conductive pattern formed on the substrate. FIG. 19A is a cross-sectional view showing a first plating process for depositing the first metal layer on the conductive pattern, and FIG. 19B is a plan view showing the first metal layer in FIG. . FIG. 20A is a cross-sectional view showing a resist formation process for forming a resist pattern on the pattern substrate and the first metal layer, and FIG. 20B is a plan view showing the resist pattern of FIG. FIG. 21 is a cross-sectional view showing a second plating process for depositing a second metal layer on the first metal layer. FIG. 22 is a view showing a removing process for removing the resist pattern. FIG. 23A is a diagram illustrating a separation process for separating the combination of the first metal layer and the second metal layer from the pattern substrate, and FIG. 23B is a diagram illustrating the deposition mask of FIG. The top view which shows the case where it sees from the side.

<First embodiment of the present invention>
The first embodiment of the present invention will be described below with reference to the drawings. In the drawings attached to the present specification, for the sake of illustration and ease of understanding, the scale, the vertical / horizontal dimension ratio, and the like are appropriately changed and exaggerated from those of the actual product.

  FIGS. 1-17 is a figure for demonstrating 1st Embodiment by this invention and its modification.

  In the following first embodiment and its modifications, an example of a method for manufacturing an evaporation mask device used for patterning an organic light emitting material on a glass substrate in a desired pattern when manufacturing an organic EL display device will be described. I will explain. However, the present invention is not limited to such an application, and the present invention can be applied to a vapor deposition mask device and a method for manufacturing the vapor deposition mask device used for various purposes.

  In the present specification, the terms “plate”, “sheet”, and “film” are not distinguished from each other only based on the difference in names. For example, “plate” is a concept that includes members that can be called sheets and films. Therefore, “metal plate” is distinguished from members called “metal sheet” and “metal film” only by the difference in name. I don't get it.

  In addition, “plate surface (sheet surface, film surface)” means a target plate-like member (sheet-like) when the target plate-like (sheet-like, film-like) member is viewed as a whole and globally. It refers to the surface that coincides with the plane direction of the member or film-like member. Moreover, the normal direction used with respect to a plate-shaped (sheet-like, film-like) member refers to the normal direction with respect to the plate surface (sheet surface, film surface) of the member.

  Furthermore, as used in this specification, the shape and geometric conditions and the degree thereof are specified. For example, terms such as “parallel”, “orthogonal”, “identical”, length and angle values, etc. Without being bound by meaning, it should be interpreted including the extent to which similar functions can be expected.

  First, an example of a vapor deposition mask apparatus including a vapor deposition mask that can be manufactured by the vapor deposition mask manufacturing method according to the present embodiment will be described mainly with reference to FIGS. 1 (a), (b), (c) and FIG. Here, FIG. 1 (a) (b) (c) is a perspective view which shows the vapor deposition mask apparatus containing a vapor deposition mask, and its manufacturing method.

  The vapor deposition mask apparatus 10 shown in FIGS. 1A, 1B and 1C has a plurality of vapor deposition masks 20 made of a rectangular metal plate and each vapor deposition mask 20 bonded thereto, and this vapor deposition mask 20 is held. And a frame 15 (see FIG. 1C). Each vapor deposition mask 20 includes a metal plate 21 having a first surface 21a and a second surface 21b opposite to the first surface 21a. The metal plate 21 includes a first surface 21a and a second surface 21b. A plurality of through holes 25 extending therebetween are formed. As shown in FIG. 2, the vapor deposition mask device 10 is supported in the vapor deposition device 90 so that the vapor deposition mask 20 faces the glass product 92. And the vapor deposition mask 20 and the glass product 92 are urged | biased by the magnet not shown in figure.

  In the vapor deposition apparatus 90, a crucible 94 for accommodating a vapor deposition material (for example, an organic light emitting material) 98 and a heater 96 for heating the crucible 94 are disposed below the glass substrate 92 sandwiching the vapor deposition mask apparatus 10. Has been. The vapor deposition material 98 in the crucible 94 is vaporized or sublimated by heating from the heater 96 and adheres to the surface of the glass product 92. As described above, a large number of through holes 25 are formed in the vapor deposition mask 20, and the vapor deposition material 98 adheres to the glass product 92 through the through holes 25. As a result, the vapor deposition material 98 is formed on the surface of the glass product 92 in a desired pattern corresponding to the position of the through hole 25 of the vapor deposition mask 20.

  As shown in FIG.1 (c), in this Embodiment, the vapor deposition mask 20 consists of the metal film (metal plate) 21 formed by the plating process, and is substantially square shape in planar view, and more precisely planar view. Has a substantially rectangular outline. The metal plate 21 of the vapor deposition mask 20 includes a perforated region 22 in which the through hole 25 is formed and a non-perforated region 23 in which the through hole 25 is not formed and occupies a region surrounding the perforated region 22. Have. As shown in FIG. 1, each perforated region 22 is a region in which a through hole 25 is formed, and has a substantially rectangular shape in plan view, more precisely, a substantially rectangular shape in plan view. The perforated region may have a stripe shape (strip shape), a pentagonal shape, a hexagonal shape, or a circular shape in plan view.

  In the illustrated example, the plurality of perforated regions 22 are arranged at predetermined intervals along one direction parallel to one side of the vapor deposition mask 20. In the illustrated example, one perforated region 22 corresponds to one organic EL display device. Further, one perforated region 22 may correspond to one vapor deposition mask 20 and one unit resist pattern 3B described later. That is, according to the vapor deposition mask device 10 (vapor deposition mask 20) shown in FIGS. 1A, 1B, and 1C, vapor deposition with multiple surfaces is possible.

  Further, as shown in FIGS. 1A, 1B, and 1C, the plurality of through holes 25 formed in each perforated region 22 are arranged side by side at equal intervals in the perforated region 22. Yes.

  As described above, the vapor deposition mask device 10 includes a plurality of vapor deposition masks 20 and a frame 15 to which the vapor deposition masks 20 are bonded to hold the vapor deposition mask 20. An opening 16 corresponding to the hole region 22 is formed.

  A plurality of warpage prevention plates may be attached to the back surface of the frame 15. Each vapor deposition mask 20 held on the surface of the frame 15 has a belt-like shape having a plurality of perforated regions 22 arranged in succession, and the warpage preventing plate has a belt-like shape like the vapor deposition mask 20. 20 are arranged in the same direction as the longitudinal direction.

  As will be described later, the vapor deposition mask 20 is formed by performing a plating process on the substrate 1 having the glass substrate body 1a and the ITO film 1b formed on the substrate body 1a (FIG. 3A). ) (B) (c) to FIG. 7 (a) (b) (c)).

  In this case, the evaporation mask 20 </ b> A with the substrate is formed by the evaporation mask 20 and the glass substrate 1. Then, by removing the substrate 1 from the evaporation mask with substrate 20A, the evaporation mask 20 according to the present embodiment is obtained.

  The number of vapor deposition masks 20 arranged on the surface of the frame 15 is not particularly limited.

  A single vapor deposition mask 20 may be disposed on the surface of the frame 15, and two, three, or four or more vapor deposition masks 20 may be disposed on the frame 15.

  The vapor deposition mask 20 and the warp prevention plate are fixed to the frame 15 by welding or an adhesive.

  Further, the number of warpage preventing plates attached to the back surface of the frame 15 is not particularly limited. The warpage preventing plate is made of a material having the same thermal expansion coefficient as that of the vapor deposition mask 20, preferably the same material. When tension is applied to the vapor deposition mask 20 disposed on the surface of the frame 15 using thermal expansion as will be described later, the thermal expansion is also used for the warp prevention plate disposed on the back surface of the frame. Apply tension. This prevents warping of the vapor deposition mask device 10 as a whole.

  When the frame 15 has sufficient rigidity, it is not necessary to provide a warp preventing plate on the back surface of the frame 15.

Next, the operation of the present embodiment having such a configuration will be described.
First, a method for manufacturing the evaporation mask with substrate 20A will be described mainly with reference to FIGS. 3 (a), (b), (c), and (d) to FIGS. 6 (a), (b), and (c).

  First, as shown in FIGS. 3A and 5A, a glass substrate body 1a is prepared.

  In this case, as the substrate main body 1a, non-alkali glass or soda glass having a thickness of 0.7 mm can be used, and its thermal expansion coefficient is 3 to 9 ppm / ° C.

  Next, as shown in FIGS. 3B and 5B, an ITO film 1b is formed on the substrate body 1a by sputtering. In this case, the film thickness of the ITO film 1b is, for example, 1500 mm. By increasing the thickness of the ITO film 1b, the resistance value of the ITO film 1b can be lowered and the plating process can be easily performed. Although the ITO film is exemplified, the film is not limited to ITO, and a film made of another conductive material can be used instead of the ITO film. For example, a film made of chromium or copper can be used instead of the ITO film.

  Thus, the glass substrate 1 is obtained from the substrate body 1a and the ITO film 1b.

  Next, as shown in FIGS. 3C and 5C, a negative resist film 3A is formed on the ITO film 1b of the substrate 1 made of glass. In this case, the negative resist solution 3A can be formed on the substrate 1 by applying a negative resist solution on the substrate 1 and then baking the negative resist solution. The film thickness of the negative resist film 3A is preferably determined from the hole pitch, opening diameter, vapor deposition angle, and the like, and is, for example, about 7 to 18 μm.

  Next, as shown in FIGS. 3D and 5D and 5E, an exposure mask (having a quartz glass substrate 5a and a light-shielding pattern 5b on the quartz glass substrate 5a with respect to the negative resist film 3A). Using a photomask 5, proximity exposure with UV light is performed and baking is performed. Thereafter, the exposure mask 5 is removed from the substrate 1, and the negative resist film 3A is developed with a developing solution, whereby a resist pattern including a plurality of unit resist patterns 3B arranged in multiple stages and in multiple rows on the substrate 1 is provided. 3 can be formed (see FIG. 4 (a) and FIG. 6 (a)).

  Each unit resist pattern 3 </ b> B of the resist pattern 3 formed on the substrate 1 has a tapered cross section that tapers toward the substrate 1. Therefore, as described later, when the plating layer 2 is formed by plating in the space between the unit resist patterns 3B of the resist pattern 3, the plating layer 2 has a cross-sectional shape that extends toward the substrate 1.

  Next, the process of forming the resist pattern 3 on the substrate 1 will be further described with reference to FIGS.

  As shown in FIG. 10A, proximity exposure is performed on the negative resist film 3A using an exposure mask (photomask) 5 having a quartz glass substrate 5a and a light shielding pattern 5b on the quartz glass substrate 5a. In this case, the gap g between the negative resist film 3A and the exposure mask 5 can be widened. In this case, since the UV light L passing through the exposure mask 5 reaches the negative resist film 3A while expanding, the light intensity distribution on the surface of the negative resist film 3A has a gentle mountain shape. For this reason, an exposed portion 3a having a cross section with a large taper angle is formed in the negative resist film 3A. A portion of the resist film 3A other than the exposed portion 3a becomes an unexposed portion 3b.

  Therefore, by developing and baking the negative resist film 3A after exposure, the resist pattern 3 including a plurality of unit resist patterns 3B having a tapered cross section tapering toward the substrate 1 can be reliably formed. (FIG. 10A).

  On the other hand, as shown in FIG. 10B, when the gap g between the negative resist film 3A and the exposure mask 5 is reduced, the light intensity distribution on the surface of the negative resist film 3A has a steep mountain shape. Make. For this reason, an exposed portion 3a having a cross section with a large taper angle is formed in the negative resist film 3A. A portion of the resist film 3A other than the exposed portion 3a becomes an unexposed portion 3b.

  In this case, when the negative resist film 3A is developed and baked after exposure, the cross section of each unit resist pattern 3B of the resist pattern 3 has a rectangular shape or a tapered shape with a tapered angle. For this reason, it is difficult to ensure that the cross section of the resist pattern 3 is tapered.

  Through the above-described steps, a resist pattern 3 having a tapered shape that tapers toward the substrate 1 can be formed on the substrate 1 (see FIGS. 4A and 6A).

  In this case, the substrate 1 and the resist pattern 3 constitute a resist pattern-attached substrate 1A.

  The resist pattern-attached substrate 1A thus obtained has a resist pattern 3 including a plurality of unit resist patterns 3B for the multi-stage multi-row evaporation mask 2.

  In FIG. 4A, the resist pattern 3 of the substrate 1A with a resist pattern is a resist pattern 3 including nine unit resist patterns 3B for a multi-sided deposition mask 2 of 3 stages × 3 rows. The shape of the resist pattern 3 is not limited to 3 × 3 rows, and the resist pattern 3 may include a larger number of multi-stage and multi-row unit resist patterns 3B.

  When plating processing is performed on such a large-sized substrate 1A with a resist pattern, it is necessary to increase the size of the plating processing apparatus, which increases the manufacturing cost. In addition, when the plating process is performed on the large substrate 1A with a resist pattern, the film thickness of the plating layer 2 formed by the plating process varies greatly, resulting in wrinkles during stretching. Problems such as variations occur.

  Therefore, in the present embodiment, the glass substrate 1 of the resist pattern-attached substrate 1A having the resist pattern 3 including the unit resist pattern 3B of 3 stages × 3 rows is cut into an elongated shape to form units of 3 stages × 1 row. A substrate 1A with a resist pattern having a resist pattern 3 including a resist pattern 3B is formed (see FIG. 4B).

  Next, the plating layer 2 can be formed while the unit resist pattern 3B of the resist pattern 3 is included by performing a plating process on the substrate 1A with a resist pattern (see FIG. 4C and FIG. 6B). . In this case, the thickness (height) of the plating layer 2 is lower than the height of the resist pattern 3.

  Next, as shown in FIGS. 4D and 6C, the resist pattern 3 is removed from the substrate 1 to leave the plating layer 2 on the substrate 1. As a result, the vapor deposition mask 20 made of the plating layer 2 can be formed on the substrate 1. In this case, the vapor deposition mask 20 made of the plating layer 2 has a perforated region 22 having a through hole 25 corresponding to the resist pattern 3 and a non-porous region 23 surrounding the perforated region 22.

  In this way, the substrate-equipped vapor deposition mask 20A is obtained from the substrate 1 and the vapor deposition mask 20 formed of the plating layer 2 formed on the substrate 1 by plating.

  In this case, the vapor deposition mask 20 includes a Ni plating layer or a Ni alloy plating layer 2 having a thickness smaller than that of the resist film 3A.

  As described above, the plating layer 2 constituting the vapor deposition mask 20 of the vapor deposition mask with substrate 20 </ b> A has a cross section with a tapered shape that expands toward the substrate 1.

  Next, the action of cutting the glass substrate 1 of the resist-pattern-equipped substrate 1A into an elongated shape will be further described with reference to FIGS.

  As described above, the shape of the resist pattern 3 of the resist pattern-equipped substrate 1A is not limited to that having the unit resist pattern 3B of 3 stages × 3 rows, and more multi-stage multi-row unit resist patterns 3B. The resist pattern 3 may be formed.

  By cutting the glass substrate 1 of the resist pattern-coated substrate 1A on which the resist pattern 3 including the plurality of unit resist patterns 3B arranged in multiple stages and multiple rows in this manner is formed into an elongated shape, for example, 6 stages × 1 line The resist pattern-equipped substrate 1A having the resist pattern 3 including the six unit resist patterns 3B can be manufactured. Then, the plating layer 2 is formed between the resist patterns 3 by plating the resist pattern-coated substrate 1A having the resist pattern 3 including the six unit resist patterns 3B in six steps × one row, thereby forming six steps. A vapor deposition mask 20A with a substrate having × 1 rows of vapor deposition masks 20 is obtained (see FIG. 11).

  A deposition mask 20A with a substrate shown in FIG. 11 has a deposition mask 20 of 6 stages × 1 row.

  Further, as shown in FIG. 11, the vapor deposition mask 20 of the vapor deposition mask with substrate 20A adjacent in the elongated direction and the resist pattern 3 of the substrate with resist pattern 1A corresponding to the vapor deposition mask with substrate 20A are spaced apart from each other. Are continuous with each other.

  Thus, the glass substrate 1 can be used effectively by arranging the vapor deposition masks 20 of the vapor deposition masks with substrates 20A adjacent to each other in the elongated direction.

  Further, by cutting the glass substrate 1 of the resist pattern-attached substrate 1A on which the resist pattern 3 including the plurality of unit resist patterns 3B in multiple stages and multiple rows is formed into an elongated shape, for example, 6 pieces in 6 stages × 1 row Since the resist pattern-attached substrate 1A having the resist pattern 3 including the unit resist pattern 3B can be produced, the plating apparatus can be reduced in size and the plating process can be performed efficiently. Further, the size of the resist pattern-attached substrate 1A can be reduced, and variations in the thickness of the plating layer 2 formed by plating can be suppressed.

  As shown in FIG. 12, the resist pattern-attached substrate 1 </ b> A includes a glass substrate 1 and a resist pattern 3 including a plurality of unit resist patterns 3 </ b> B in a multistage multi-row provided on the glass substrate 1. However, when the glass substrate 1 of the substrate 1A with a resist pattern is cut into an elongated shape, the unit resist patterns 3B adjacent in the elongated direction may be arranged with a gap G.

  As shown in FIG. 13, when the elongated substrate-attached evaporation mask 20 </ b> A is manufactured using the elongated resist-patterned substrate 1 </ b> A, the evaporation mask 20 adjacent in the elongated direction is a unit adjacent in the elongated direction. Similar to the resist pattern 3B, the resist patterns 3B are arranged at intervals G.

  As described above, in the elongated substrate-attached deposition mask 20A, when the deposition masks 20 adjacent to each other in the elongated direction are arranged with a gap G, the film thickness variation of the plating layer 2 can be more reliably performed during the plating process. Can be suppressed. Moreover, the pitch fluctuation of the vapor deposition mask 20 at the time of peeling the board | substrate 1 from 20A of vapor deposition masks with a board | substrate can be suppressed.

  Furthermore, when the vapor deposition masks 20 adjacent to each other in the elongate direction of the vapor deposition mask with substrate 20A are arranged at intervals G, the vapor deposition mask when the vapor deposition mask with substrate 20A is secured to the frame 15 via the adhering portion 65. Twenty pitch variations can be accommodated in each deposition mask 20 (see FIG. 14).

  By the way, in the above embodiment, by cutting the glass substrate 1 of the resist pattern-coated substrate 1A including a plurality of multi-stage, multi-row unit resist patterns 3B into an elongated shape, for example, 6 units of 6 stages × 1 row. Although an example in which the substrate 1A with a resist pattern having the resist pattern 3 including the resist pattern 3B has been shown (see FIG. 12), the present invention is not limited to this, and a resist pattern substrate 1A including a plurality of, for example, two unit resist patterns 3B. The glass substrate 1 may be cut for each unit resist pattern 3B along the cutting line L at the center (see FIG. 15A). In this case, the vapor deposition mask 20 singulated on the glass substrate 1 can be formed.

  Alternatively, the glass substrate 1 of the resist pattern-equipped substrate 1A including the four unit resist patterns 3B may be cut along the cross-shaped cutting line L for each unit resist pattern 3B (see FIG. 15B). ). In this case, the vapor deposition mask 20 singulated on the glass substrate 1 can be formed.

  Alternatively, the glass substrate 1 of the resist-patterned substrate 1A including a total of 32 unit resist patterns 3B of 4 stages × 8 rows is divided into two along the cutting line L at the center, and a plurality of stages, for example, 4 stages You may cut | disconnect to the unit resist pattern 3B of * 4 row | line | column (refer Fig.16 (a)). In this case, the vapor deposition masks 20 arranged in 4 stages × 4 rows can be formed on the glass substrate 1.

  Alternatively, the glass substrate 1 of the resist pattern-attached substrate 1A including a total of 32 unit resist patterns 3B of 8 rows × 8 rows is divided into two along the cutting line L at the center, and a plurality of rows, a plurality of rows, for example, 8 rows You may cut | disconnect to the unit rest pattern 3B of * 4 row | line | column (refer FIG.16 (b)). In this case, the vapor deposition masks 20 arranged in 8 stages × 4 rows can be formed on the glass substrate 1.

  Alternatively, the glass substrate 1 of the resist-pattern-equipped substrate 1A including a total of 24 unit resist patterns 3B in 4 stages × 6 rows is divided into three along the cutting line L, so that a plurality of stages, a plurality of rows, for example, 4 stages × It may be cut into two rows of unit resist patterns 3B (see FIG. 17A). In this case, the vapor deposition masks 20 arranged in 4 stages × 2 rows can be formed on the glass substrate 1.

  Alternatively, the glass substrate 1 of the resist pattern-attached substrate 1A including a total of 48 unit resist patterns 3B of 8 rows × 6 rows is divided into 6 along the cutting line L, and a plurality of rows, a plurality of rows, for example, 8 rows × 2 rows The unit rest pattern 3B may be cut (see FIG. 17B). In this case, the vapor deposition masks 20 arranged in 4 stages × 2 rows can be formed on the glass substrate 1.

  Next, the characteristics of the plating layer 2 having a tapered cross section extending toward the substrate 1 will be described with reference to FIGS.

  As shown in FIG. 7, the cross section of the plating layer 2 constituting the evaporation mask with substrate 20 </ b> A has a tapered shape that expands toward the substrate 1. In this case, it is preferable that the taper shape of the plating layer 2 has a taper angle β that substantially matches the vapor deposition angle α of the vapor deposition material 98 in the vapor deposition apparatus 90 shown in FIG.

  Here, the vapor deposition angle α of the vapor deposition material 98 refers to an angle range when the vapor deposition material 98 approaches the vapor deposition mask 20 in the vapor deposition apparatus 90.

  Thus, the shadow of the vapor deposition mask 2 can be made substantially zero by making the taper-shaped taper angle β (eg, 45 °) of the plating layer 2 substantially coincide with the vapor deposition angle α (eg, 45 °).

  Here, FIGS. 8A, 8B, and 8C show a deposition mask with substrate 20A as a comparative example.

  As shown in FIG. 8A, the arrangement pitch of the unit resist pattern 3B and the plating layer 2 of the resist pattern 3 of the evaporation mask with substrate 20A is large, and the cross section of the plating layer 2 is substantially rectangular. Yes.

  In this case, even if the cross section of the plating layer 2 is substantially rectangular, the influence of the shadow is small because the arrangement pitch is large.

  On the other hand, as shown in FIGS. 8B and 8C, when a high-definition display is manufactured, the arrangement pitch of the resist pattern 3 and the plating layer 2 of the evaporation mask with substrate 20A is reduced. In this case, if the plating layer 2 has a rectangular cross section, the shadow of the vapor deposition mask 20 becomes large when the vapor deposition angle α is 45 °.

  In FIGS. 8B and 8C, it is conceivable to further reduce the thickness of the plating layer 2 in consideration of the influence of shadows, but in this case, the strength of the vapor deposition mask 20 is reduced.

  In contrast, according to the present embodiment, the cross section of the plating layer 2 is tapered so as to expand toward the substrate 1, and the taper angle β of the taper shape is substantially matched with the vapor deposition angle α. The shadow of the vapor deposition mask 20 can be made substantially zero without reducing the film thickness.

  The substrate 1 is composed of the glass substrate body 1a and the ITO film 1b as described above, so that the UV light is not reflected on the substrate 1 when the negative resist film 3A is exposed. 1 is transmitted. Therefore, the resist pattern 3 can be accurately manufactured by accurately forming the exposed portion 3a by UV light on the negative resist film 3A (see FIG. 9A).

  On the other hand, when the substrate 1 made of a reflective material is used, it is considered that the UV light is partially reflected from the substrate 1 when the negative resist film 3A is exposed. The protrusion 8 of the exposed portion 3a is formed on the pattern 3 (see FIG. 9B).

  Thus, according to the present embodiment, by using the glass substrate 1, the exposed portion 3a and the resist pattern 3 by UV light can be formed with high accuracy.

  Next, the vapor deposition mask device 10 is manufactured using the vapor deposition mask with substrate 20A thus obtained.

  First, as shown in FIG. 1A, a plurality of the above-described substrate-attached vapor deposition masks 20A are prepared. In this case, the deposition mask 20 of each substrate deposition mask 20A has a perforated region 22 and a non-perforated region 23 surrounding the perforated region 22, and a plurality of perforated regions 22 of the deposition mask 20 are continuously arranged. Each vapor deposition mask 20 has a strip shape. The vapor deposition mask 20 is made of a Ni plating layer or a Ni alloy plating layer, and its thermal expansion coefficient is 12.8 ppm / ° C., for example, when the vapor deposition mask 20 is made of a Ni plating layer. The substrate 1 of the evaporation mask with substrate 20A is made of glass having a thermal expansion coefficient of 3 to 9 ppm / ° C.

  Similarly, a frame 15 having an opening 16 and a thickness of 3 to several tens of mm is prepared, and this frame 15 is placed on the thermal control panel 70. In this case, the frame 15 is made of 36Ni invar material having a thermal expansion coefficient of around 1 ppm / ° C. For this reason, the frame 15 has a thermal expansion coefficient smaller than the thermal expansion coefficient of both the substrate 1 and the vapor deposition mask 20 of the vapor deposition mask with substrate 20A.

  Next, as shown in FIG. 1A, each deposition mask with substrate 20 </ b> A is placed on a frame 15 having an opening 16. In this case, a positioning mark is provided on the surface of the frame 15, and a positioning mark corresponding to the positioning mark of the frame 15 is also provided on each substrate deposition mask 20 </ b> A, and the deposition with substrate is performed on the frame 15 using these positioning marks. The mask 20A can be accurately positioned.

  In this manner, the substrate-attached vapor deposition mask 20A and the frame 15 are laminated on the heat control panel 70 in order from the top, and the laminate 10A including the substrate-equipped vapor deposition mask 20A and the frame 15 is manufactured.

  The thermal control panel 70 functions as a hot plate that heats the stacked body 10A or a cold plate that cools the stacked body 10A.

  Next, in FIG.1 (b), 10 A of laminated bodies are heated on the heat control board 70 from room temperature of 20 degreeC to 50 degreeC, for example.

  At this time, the laminated body 20A is heated to 50 ° C. as a whole on the thermal control panel 70, and the frame 15 made of 36Ni invar material in the laminated body 20A does not thermally expand greatly, but each substrate deposition mask 20A. Each expands based on its own coefficient of thermal expansion. In this state, laser light is irradiated from the glass substrate 1 side to the non-porous region 23 of the substrate-attached vapor deposition mask 20A on the frame 15, and the non-porous region 23 of the substrate-equipped vapor deposition mask 20A is welded to the frame 15. Let In this way, the evaporation mask with substrate 20A is fixed to the frame 15 via the fixing portion 65 (see FIG. 1B).

  Thereafter, the laminated body 10A is lowered from the thermal control panel 70, cooled back to room temperature, and returned. In this case, the shape of the frame 15 made of 36Ni invar material hardly changes, but the evaporation mask with substrate 20A is cooled to room temperature and thermally contracted. Since the evaporation mask with substrate 20A is fixed to the frame 15, an appropriate tension can be applied to the evaporation mask with substrate 20A along with the thermal contraction action.

  Then, about each vapor deposition mask 20A with a board | substrate on the flame | frame 15, the board | substrate 1 is peeled from the laminated body 10A (refer FIG.1 (c)).

  In this way, the substrate 1 of the evaporation mask with substrate 20A is peeled from the laminated body 10A, and the evaporation mask 20 fixed on the frame 15 is obtained.

  As described above, according to the present embodiment, the laminated body 10A including the substrate-attached vapor deposition mask 20A and the frame 15 is heated on the thermal control panel 70, and in this state, the substrate-equipped vapor deposition mask 20A and the warpage prevention plate 60 are provided. Is fixed and adhered to the frame 15, and then the laminate 10A is cooled to room temperature.

  Thereby, an appropriate tension can be applied to the evaporation mask with substrate 20A and the evaporation mask 20. Further, the deposition mask with substrate 20A is physically pulled and the heating temperature by the thermal control panel 70 is set to a desired value as compared with the case where the deposition mask 20A with substrate is fixed to the frame 15. An appropriate value of tension can be applied uniformly to the frame 15 with respect to 20A and the vapor deposition mask 20.

  Further, the non-hole region 23 of the evaporation mask with substrate 20A is bonded onto the frame 15 through the fixing portion 65, and the fixing portion 65 is formed on the left and right of each of the perforated regions 22 along the width direction of the evaporation mask with substrate 20A. By providing continuously (refer FIG.1 (c)), tension | tensile_strength can be provided with respect to both the longitudinal direction and the width direction of the vapor deposition mask 20 in each perforated area | region 22 of 20A of vapor deposition masks with a board | substrate. it can.

  Furthermore, the cross section of the plating layer 2 of the vapor deposition mask 20 can be tapered, and the taper angle β of the taper can be made substantially coincident with the vapor deposition angle α. For this reason, the shadow of the vapor deposition mask 20 can be made substantially zero without reducing the film thickness of the plating layer 2. As a result, it is possible to obtain a vapor deposition mask 20 having a shadow of approximately 0 and having an appropriate strength.

  In addition, a resist pattern-attached substrate 1A having a resist pattern 3 including a plurality of unit resist patterns 3B arranged in multiple stages and multiple rows is cut into an elongated shape, for example, with a resist pattern having unit resist patterns 3B of 6 stages × 1 row. Since the substrate 1A can be manufactured, the plating apparatus can be downsized, and the plating process can be performed efficiently. Further, the size of the substrate 1A with a resist pattern can be reduced, and the film thickness variation of the plating layer 2 formed by the plating process can be suppressed.

  Moreover, the dispersion | distribution of the film thickness distribution / internal stress of the plating layer 2 can be reduced. For this reason, the total pitch fluctuation is reduced, and this makes it possible to provide an ultra-high-definition display and improve the yield rate of products.

  Further, since the size of the resist pattern-provided substrate 1A can be reduced, even if a defect occurs in the one resist pattern-provided substrate 1A by plating, only the defective resist pattern-provided substrate 1A needs to be discarded. The other resist-patterned substrate 1A is not affected.

<Second embodiment of the present invention>
Next, a second embodiment of the present invention will be described with reference to FIGS. The second embodiment shown in FIGS. 18 to 23 differs only in the method of manufacturing the vapor deposition mask 20, and the other configuration is the same as that of the first embodiment shown in FIGS.

(First film formation step)
First, the first film forming process for forming the first metal layer 32 provided with the first openings 30 in a predetermined pattern on the insulating substrate 51 will be described. First, as shown in FIG. 18, a pattern substrate 50 having an insulating substrate 51 and a conductive pattern 52 formed on the substrate 51 is prepared. The conductive pattern 52 has a pattern corresponding to the first metal layer 32. As long as it has insulation and appropriate strength, the material constituting the substrate 51 and the thickness of the substrate 51 are not particularly limited. For example, glass, synthetic resin, or the like can be used as a material constituting the substrate 51.

  As a material constituting the conductive pattern 52, a conductive material such as a metal material or an oxide conductive material is appropriately used. Examples of the metal material include ITO, chromium, copper, and the like. Preferably, a material having high adhesion to a resist pattern 55 described later is used as a material constituting the conductive pattern 52. For example, when the resist pattern 55 is formed by patterning a so-called dry film, such as a resist film containing an acrylic photo-curable resin, the resist pattern 55 is a high material for the dry film as a material constituting the conductive pattern 52. It is preferable to use copper having adhesiveness.

  As will be described later, a first metal layer 32 is formed on the conductive pattern 52 so as to cover the conductive pattern 52, and the first metal layer 32 is separated from the conductive pattern 52 in a subsequent process. . Therefore, a depression corresponding to the thickness of the conductive pattern 52 is usually formed on the surface of the first metal layer 32 on the side in contact with the conductive pattern 52. Considering this point, it is preferable that the thickness of the conductive pattern 52 is small as long as the conductive pattern 52 has conductivity necessary for the electrolytic plating process. For example, the thickness of the conductive pattern 52 is in the range of 500 to 5000 mm.

  Next, the insulating substrate 51 is cut for each region including the perforated region 22. At this time, as in the first embodiment, cutting may be performed for each region including a plurality of rows and a plurality of rows of perforated regions 22, or for each region including individual perforated regions 22. Alternatively, it may be cut for each elongated region (a region including one step and a plurality of rows of perforated regions 22 or a region including a plurality of steps and a row of perforated regions 22). By cutting the substrate 51 at this stage, the plating apparatus for forming the first metal layer 32 and the second metal layer 37 described later can be reduced in size, and the first metal layer 32 and the first metal layer 32 can be reduced. Variation in film thickness of the two metal layers 37 can be suppressed.

  Next, a first plating process is performed in which the first plating solution is supplied onto the substrate 51 on which the conductive pattern 52 (unit conductive pattern) is formed, and the first metal layer 32 is deposited on the conductive pattern 52. carry out. For example, the substrate 51 on which the conductive pattern 52 is formed is immersed in a plating tank filled with the first plating solution. As a result, as shown in FIG. 19A, the first metal layer 32 in which the first openings 30 are provided in a predetermined pattern on the pattern substrate 50 can be obtained. FIG. 19B is a plan view showing the first metal layer 32 formed on the substrate 51.

  In view of the characteristics of the plating process, as shown in FIG. 19A, the first metal layer 32 is not only a portion overlapping the conductive pattern 52 when viewed along the normal direction of the substrate 51, but also conductive. It can also be formed in a portion that does not overlap the pattern 52. This is because the first metal layer 32 is further deposited on the surface of the first metal layer 32 deposited on the portion overlapping the end portion 53 of the conductive pattern 52. As a result, as shown in FIG. 19A, the end portion 33 of the first metal layer 32 is positioned so as not to overlap the conductive pattern 52 when viewed along the normal direction of the substrate 51. Can be. On the other hand, the thickness of the first metal layer 32 at the end portion 33 is smaller than the thickness at the central portion by the amount that the metal deposition has advanced in the plate surface direction of the substrate 51 instead of the thickness direction. For example, as shown in FIG. 19A, the thickness of the first metal layer 32 is at least partially reduced from the center of the first metal layer 32 toward the end 33.

  In FIG. 19A, the width of the portion of the first metal layer 32 that does not overlap the conductive pattern 52 is represented by the symbol w. The width w is in the range of 0.5 to 5.0 μm, for example. The dimension of the conductive pattern 52 is set in consideration of the width w.

  As long as the first metal layer 32 can be deposited on the conductive pattern 52, the specific method of the first plating process is not particularly limited. For example, the first plating process may be performed as a so-called electrolytic plating process in which the first metal layer 32 is deposited on the conductive pattern 52 by passing a current through the conductive pattern 52. Alternatively, the first plating process may be an electroless plating process. When the first plating process is an electroless plating process, an appropriate catalyst layer is provided on the conductive pattern 52. Even when the electrolytic plating treatment step is performed, a catalyst layer may be provided on the conductive pattern 52.

  The components of the first plating solution used are appropriately determined according to the characteristics required for the first metal layer 32. For example, when the first metal layer 32 is made of an iron alloy containing nickel, a mixed solution of a solution containing a nickel compound and a solution containing an iron compound can be used as the first plating solution. For example, a mixed solution of a solution containing nickel sulfamate and a solution containing iron sulfamate can be used. The plating solution may contain additives such as malonic acid and saccharin.

(Second film formation step)
Next, a second film formation step is performed in which a second metal layer 37 provided with a second opening 35 communicating with the first opening 30 is formed on the first metal layer 32. First, a resist formation step is performed in which a resist pattern 55 is formed on the substrate 51 and the first metal layer 32 of the pattern substrate 50 with a predetermined gap 56 therebetween. 20A and 20B are a cross-sectional view and a plan view showing a resist pattern 55 formed on the substrate 51. FIG. As shown in FIGS. 20A and 20B, in the resist forming step, the first opening 30 of the first metal layer 32 is covered with the resist pattern 55, and the gap 56 of the resist pattern 55 is formed in the first metal layer 32. It is carried out so that it may be located on the top.

  Hereinafter, an example of the resist forming process will be described. First, a negative resist film is formed by attaching a dry film on the substrate 51 and the first metal layer 32 of the pattern substrate 50. Examples of the dry film include those containing an acrylic photocurable resin such as RY3310 manufactured by Hitachi Chemical. Next, an exposure mask that prevents light from being transmitted to a region that should become the gap 56 in the resist film is prepared, and the exposure mask is disposed on the resist film. Thereafter, the exposure mask is sufficiently adhered to the resist film by vacuum adhesion. Note that a positive type resist film may be used. In this case, an exposure mask in which light is transmitted through a region to be removed of the resist film is used as the exposure mask.

  Thereafter, the resist film is exposed through an exposure mask. Further, the resist film is developed to form an image on the exposed resist film. As described above, as shown in FIGS. 20A and 20B, the resist pattern 55 is provided with the gap 56 positioned on the first metal layer 32 and covering the first opening 30 of the first metal layer 32. Can be formed. In order to make the resist pattern 55 adhere more firmly to the substrate 51 and the first metal layer 32, a heat treatment step of heating the resist pattern 55 may be performed after the development step.

  Next, when the insulating substrate 51 is not cut yet, the insulating substrate 51 is formed into a plurality of unit resist patterns of a plurality of stages and a plurality of columns, or individual units, as in the first embodiment. You may cut | disconnect for every resist pattern or every area | region (area | region containing the unit resist pattern of 1 step | paragraph and multiple rows, or the area | region containing a unit resist pattern of 1 step | paragraph and multiple rows). Then, by cutting the substrate 51 at this stage, it is possible to reduce the size of a plating apparatus for forming the second metal layer 37 to be described later, and to vary the film thickness of the second metal layer 37. Can be suppressed.

  Next, a second plating process is performed in which the second plating solution is supplied to the gap 56 of the resist pattern 55 to deposit the second metal layer 37 on the first metal layer 32. For example, the substrate 51 on which the first metal layer 32 is formed is immersed in a plating tank filled with the second plating solution. As a result, as shown in FIG. 21, the second metal layer 37 can be formed on the first metal layer 32.

  As long as the second metal layer 37 can be deposited on the first metal layer 32, the specific method of the second plating process is not particularly limited. For example, the second plating process may be performed as a so-called electrolytic plating process in which the second metal layer 37 is deposited on the first metal layer 32 by passing a current through the first metal layer 32. Alternatively, the second plating process may be an electroless plating process. When the second plating process is an electroless plating process, an appropriate catalyst layer is provided on the first metal layer 32. Even when the electrolytic plating treatment step is performed, a catalyst layer may be provided on the first metal layer 32.

  As the second plating solution, the same plating solution as the first plating solution described above may be used. Alternatively, a plating solution different from the first plating solution may be used as the second plating solution. When the composition of the first plating solution and the composition of the second plating solution are the same, the composition of the metal constituting the first metal layer 32 and the composition of the metal constituting the second metal layer 37 are also the same.

  Although FIG. 21 shows an example in which the second plating process is continued until the upper surface of the resist pattern 55 and the upper surface of the second metal layer 37 coincide with each other, the present invention is not limited to this. The second plating process may be stopped with the upper surface of the second metal layer 37 positioned below the upper surface of the resist pattern 55.

(Removal process)
Thereafter, as shown in FIG. 22, a removing process for removing the resist pattern 55 is performed. For example, the resist pattern 55 can be peeled from the substrate 51, the first metal layer 32, and the second metal layer 37 by using an alkaline stripping solution.

(Peeling process)
Next, a separation step of peeling the combination of the first metal layer 32 and the second metal layer 37 from the substrate 51 of the pattern substrate 50 is performed. As a result, as shown in FIG. 23A, the first metal layer 32 provided with the first openings 30 in a predetermined pattern and the second openings 35 communicating with the first openings 30 are provided. The vapor deposition mask 20 provided with the second metal layer 37 can be obtained. FIG. 23B is a plan view showing the case where the vapor deposition mask 20 is viewed from the second surface 20b side.

Hereinafter, an example of the peeling process will be described in detail. First, a film in which a substance having adhesiveness is provided by coating or the like is attached to a combination of the first metal layer 32 and the second metal layer 37 formed on the substrate 51. Next, the film is pulled away from the substrate 51 by pulling up or winding up the film, whereby the combination of the first metal layer 32 and the second metal layer 37 is separated from the substrate 51 of the pattern substrate 50. Thereafter, the film is peeled off from the combination of the first metal layer 32 and the second metal layer 37.
In addition, in the peeling process, first, a gap for triggering peeling is formed between the combined body of the first metal layer 32 and the second metal layer 37 and the substrate 51. Next, air is introduced into the gap. May be sprayed to accelerate the peeling process.

  Note that as the substance having adhesiveness, a substance that loses adhesiveness when irradiated with light such as UV or when heated may be used. In this case, after the combination of the first metal layer 32 and the second metal layer 37 is separated from the substrate 51, a step of irradiating the film with light and a step of heating the film are performed. Thereby, the process of peeling the film from the combination of the first metal layer 32 and the second metal layer 37 can be facilitated. For example, the film can be peeled off in a state in which the film and the combination of the first metal layer 32 and the second metal layer 37 are maintained in parallel with each other as much as possible. Accordingly, it is possible to prevent the combined body of the first metal layer 32 and the second metal layer 37 from being curved when the film is peeled off. This causes the deposition mask 20 to be deformed such as curved. This can be suppressed.

  According to the present embodiment, as described above, the second plating solution is supplied to the gap 56 of the resist pattern 55 to deposit the second metal layer 37 on the first metal layer 32, whereby the vapor deposition mask 20. Is produced. Therefore, both the shape defined by the first opening 30 of the first metal layer 32 and the shape defined by the second opening 35 of the second metal layer 37 are formed in the through hole 25 of the vapor deposition mask 20. Can be granted. Therefore, the through hole 25 having a complicated shape can be precisely formed.

  Note that various modifications can be made to the above-described embodiment.

DESCRIPTION OF SYMBOLS 1 Substrate 1a Substrate body 1b ITO film 2 Plating layer 3 Resist pattern 3A Negative resist film 3B Unit resist pattern 5 Exposure mask 10 Deposition mask device 10A Laminate 15 Frame 16 Opening 20 Deposition mask 20A Substrate deposition mask 21 Metal plate 21a First One surface 21b Second surface 22 Perforated region 23 Non-porous region 25 Through hole 30 First opening 31 Wall surface 32 First metal layer 33 End portion 35 Second opening portion 36 Wall surface 37 Second metal layer 38 End portion 41 Connection portion 50 Pattern substrate 51 Substrate 52 Conductive pattern 53 End portion 55 Resist pattern 56 Gap 65 Adhering portion 70 Thermal control panel

Claims (9)

A resist pattern for plating treatment on a glass substrate, the step of forming a resist pattern including a plurality of unit resist patterns arranged in multiple rows corresponding to a plurality of vapor deposition masks and arranged in multiple rows;
Cutting the glass substrate into a plurality of stages and a plurality of rows of unit resist patterns;
A vapor deposition mask having a perforated region and a non-perforated region surrounding the perforated region is formed on the substrate on which the unit resist pattern is formed by cutting into unit resist patterns of a plurality of stages and a plurality of rows, using the unit resist pattern as a mask. And a step of forming by a plating process. A resist pattern for plating treatment on a glass substrate, the step of forming a resist pattern including a plurality of unit resist patterns multi-faced corresponding to a plurality of vapor deposition masks;
Cutting the glass substrate into individual unit resist patterns;
An evaporation mask having a perforated region and a non-perforated region surrounding the perforated region is formed on the substrate on which the unit resist pattern is formed by cutting each unit resist pattern by plating using the unit resist pattern as a mask. And a process for forming the substrate-deposited mask. A resist pattern for plating treatment on a glass substrate, the step of forming a resist pattern including a plurality of unit resist patterns multi-faced corresponding to a plurality of vapor deposition masks;
Cutting the glass substrate;
Forming a vapor deposition mask having a perforated region and a non-perforated region surrounding the perforated region on the substrate on which the unit resist pattern is formed by plating using the unit resist pattern as a mask;
And a step of peeling the glass substrate from the vapor deposition mask.   3. The method for producing a deposition mask with a substrate according to claim 1, wherein the unit resist patterns adjacent to each other on the cut glass substrate are continuous with each other without any interval.   3. The method for manufacturing a deposition mask with a substrate according to claim 1, wherein the adjacent unit resist patterns on the cut glass substrate are arranged at intervals.   4. The method for producing a vapor deposition mask according to claim 3, wherein the adjacent unit resist patterns on the cut glass substrate are continuous with each other without any interval.   4. The method of manufacturing a vapor deposition mask according to claim 3, wherein the adjacent unit resist patterns on the cut glass substrate are arranged at intervals. A glass substrate;
A plurality of vapor deposition masks formed of a plating layer having a perforated region and a non-perforated region surrounding the perforated region;
The plurality of vapor deposition masks are arranged in a plurality of stages and in a plurality of rows, respectively. A glass substrate;
Vapor deposition with a substrate characterized by comprising: a vapor deposition mask formed by plating on a substrate and having a perforated region and a plating layer having a non-porous region surrounding the perforated region; mask.

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