JP2017166029A - Vapor deposition mask and vapor deposition mask intermediate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor deposition mask capable of improving the positional accuracy of an open hole when stretched.SOLUTION: A vapor deposition mask 20 includes a dummy region 80 intervening between at least one of a pair of ear parts 24 and an effective region 22. At least one of a first surface dummy opening 84 provided on a first surface 20a of the vapor deposition mask 20 and a second surface dummy opening 85 provided on a second surface 20b is formed in the dummy region 80. The dummy region 80 has a first region side edge portion 81 provided on one side in the width direction of the vapor deposition mask 20 and a second region side edge portion 82 provided on the other side. A material residual amount in the first region side edge portion 81 of the dummy region 80 is smaller than that in the second region side edge portion 82.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a deposition mask and a deposition mask intermediate for depositing a deposition material on a substrate.

  In recent years, a display device used in a portable device such as a smartphone or a tablet PC is required to have high definition, for example, a pixel density of 400 ppi or more. In portable devices, there is an increasing demand for compatibility with ultra full high vision, and in this case, the pixel density of the display device is required to be, for example, 800 ppi or more.

  Among display devices, organic EL display devices have attracted attention because of their excellent responsiveness, low power consumption, and high contrast. As a method of forming pixels of an organic EL display device, a method of forming pixels with a desired pattern using a vapor deposition mask including through holes arranged in a desired pattern is known. Specifically, the vapor deposition mask is first brought into close contact with the organic EL substrate (substrate) for the organic EL display device, and then the vapor deposition mask and the organic EL substrate which are brought into close contact with each other are put into the vapor deposition device. A vapor deposition step of vapor-depositing on the organic EL substrate is performed. In this case, in order to precisely manufacture an organic EL display device having a high pixel density, the position and shape of the through hole of the vapor deposition mask should be accurately reproduced according to the design, and the thickness of the vapor deposition mask should be reduced. Is required.

  As a method for manufacturing a vapor deposition mask, for example, as disclosed in Patent Document 1, a method of forming a through hole in a metal plate by etching using a photolithography technique is known. For example, first, a first resist pattern is formed on the first surface of the metal plate, and a second resist pattern is formed on the second surface of the metal plate. Next, a region of the first surface of the metal plate that is not covered with the first resist pattern is etched to form a first opening in the first surface of the metal plate. Thereafter, a region of the second surface of the metal plate that is not covered with the second resist pattern is etched to form a second opening in the second surface of the metal plate. At this time, by performing etching so that the first opening and the second opening communicate with each other, a through-hole penetrating the metal plate can be formed. The metal plate for producing the vapor deposition mask is obtained, for example, by rolling a base material such as an iron alloy.

  In addition, as a method for manufacturing a vapor deposition mask, for example, as disclosed in Patent Document 2, a method for manufacturing a vapor deposition mask using a plating process is known. For example, in the method described in Patent Document 2, first, a conductive substrate is prepared. Next, a resist pattern is formed on the substrate with a predetermined gap. This resist pattern is provided at a position where a through hole of the vapor deposition mask is to be formed. Thereafter, a plating solution is supplied to the gap between the resist patterns, and a metal layer is deposited on the substrate by electrolytic plating. Thereafter, by separating the metal layer from the substrate, it is possible to obtain a vapor deposition mask in which a plurality of through holes are formed.

Japanese Patent No. 5382259 JP 2001-234385 A

  When a vapor deposition material is formed on a substrate using a vapor deposition mask, the vapor deposition material adheres not only to the substrate but also to the vapor deposition mask. For example, some vapor deposition materials are directed to the substrate along a direction that is largely inclined with respect to the normal direction of the vapor deposition mask, but such vapor deposition material is vapor deposited before reaching the substrate. It reaches the wall surface of the through hole of the mask and adheres. In this case, the vapor deposition material is less likely to adhere to the region of the substrate located near the wall surface of the through hole of the vapor deposition mask. As a result, the thickness of the deposited vapor deposition material may be smaller than other portions. It is conceivable that a portion where the vapor deposition material is not attached may be generated. That is, it is considered that the vapor deposition in the vicinity of the wall surface of the through hole of the vapor deposition mask becomes unstable. Therefore, when a vapor deposition mask is used to form a pixel of the organic EL display device, the dimensional accuracy and position accuracy of the pixel are lowered, and as a result, the light emission efficiency of the organic EL display device is lowered. Become.

  In order to solve such a problem, it is conceivable to reduce the thickness of the metal plate used for manufacturing the vapor deposition mask. Because, by reducing the thickness of the metal plate, the height of the wall surface of the through hole of the vapor deposition mask can be reduced, thereby reducing the proportion of the vapor deposition material that adheres to the wall surface of the through hole. Because you can.

  As the metal plate used for producing the vapor deposition mask, a rolled material obtained by rolling a base material to a predetermined thickness may be used. In order to reduce the thickness of such a metal plate, it is necessary to increase the rolling rate of the metal plate. Here, the rolling rate is a value calculated by (base material thickness−metal plate thickness) / (base material thickness). However, the elongation percentage of the metal plate varies depending on the position in the width direction (direction perpendicular to the conveyance direction of the base material). And the degree of the nonuniformity of the deformation | transformation based on rolling may become large, so that a rolling rate is large. For this reason, it is known that a corrugated shape appears in a metal plate rolled at a large rolling rate. Specifically, there is a corrugated shape formed at the side edge in the width direction of the metal plate, which is called ear extension. Even when heat treatment such as annealing is performed after rolling, such a wavy shape can appear.

  Moreover, the metal plate which has predetermined | prescribed thickness may be produced by the foil manufacturing process using a plating process. However, if the current density is non-uniform in the foil-making process, the thickness of the metal plate to be manufactured can be non-uniform. As a result, a similar wavy shape may appear at the side edge in the width direction of the metal plate.

  When exposing a metal plate having a wavy shape at the side edge, the exposure mask is vacuum-adhered to the metal plate. At this time, the side edge where the wavy shape was formed is corrected so as not to have wrinkles and is in close contact with the exposure mask. In this close contact state, the metal plate is exposed to form a through hole. That is, the metal plate is exposed so that a through hole having a normal dimension is obtained in a state where the metal plate is stretched so as not to have wrinkles. After the exposure, when the exposure mask is removed from the metal plate, a wavy shape appears again on the side edge of the metal plate, and the side edge shrinks.

  By the way, in order to reduce the manufacturing cost of the vapor deposition mask, first, a plurality of effective areas including a plurality of through holes corresponding to one organic EL display device are formed on the metal plate, and then the metal plate is cut into a plurality of pieces. Thus, it is known to manufacture a plurality of elongate vapor deposition masks at a time. For this reason, when a corrugated shape appears at the side edge in the width direction of the metal plate, the corrugated shape formed on one side edge in the width direction is present in the cut deposition mask. There may be a deposition mask that is larger than the corrugated shape formed on the substrate. In such a vapor deposition mask, one side edge on which the wavy shape is formed contracts when not stretched, so that the vapor deposition mask is curved when viewed along the normal direction of the vapor deposition mask. In this case, the said one side edge of a vapor deposition mask becomes dented, and the other side edge becomes convex.

  When a vapor deposition mask is manufactured using a plating process, if the current density during the plating process is non-uniform, the thickness of the vapor deposition mask manufactured by the plating process is non-uniform. For this reason, the metal layer is deposited so as to obtain a through hole having a normal dimension during the plating process. However, when the above-described base material is removed from the metal layer after the plating process, the thickness is not uniform. Then, a wavy shape appears on the side edge of the metal layer, and the side edge can be in a contracted state. For this reason, the vapor deposition mask manufactured using the plating process can be curved in the same manner as the above-described vapor deposition mask manufactured by the etching process.

  When such a vapor deposition mask is stretched, the elongation of the vapor deposition mask differs in the width direction, which may cause the position of the through hole to shift. More specifically, even if a longitudinal tension is applied to the vapor deposition mask, the recessed portion is in a contracted and relaxed state, and thus the portion is not easily tensioned and is not easily stretched. Thereby, the elongation of the concave side portion can be smaller than the elongation of the convex side portion. For this reason, in the recessed part, there is a possibility that the position of the through hole at the time of vapor deposition may be shifted without being able to extend until the through hole is positioned at the normal position. In addition, even if the concave part and the convex part extend almost evenly, the concave part was loosened before the tension was applied, so the concave part extended to some extent. However, it is still in a slack state, and it is considered difficult to extend until the through hole is positioned at the normal position. For this reason, the position of the through-hole at the time of tensioning may shift.

  Thus, if the position of the through hole is shifted when the vapor deposition mask is stretched, the position of the vapor deposition material deposited on the substrate is shifted through the through hole, and the dimensional accuracy and position accuracy of the pixel of the organic EL display device are shifted. May decrease.

  The present invention has been made in view of such problems, and an object of the present invention is to provide a vapor deposition mask and a vapor deposition mask intermediate that can improve the positional accuracy of the through-holes when stretched.

The present invention
A vapor deposition mask including a first surface and a second surface located on the opposite side of the first surface,
An effective area in which a plurality of through holes are formed;
A pair of ears provided on both sides of the effective area in the first direction of the vapor deposition mask;
A first surface dummy opening provided on the first surface of the vapor deposition mask and a second surface dummy provided on the second surface, interposed between at least one of the pair of ears and the effective region. A dummy region in which at least one of the openings is formed,
The dummy region includes a first region side edge provided on one side in a second direction orthogonal to the first direction of the vapor deposition mask, a second region side edge provided on the other side, Have
The volume per unit area V, and the thickness t _u, when the material remaining amount of the material of the deposition mask was V / t _u, the material remaining amount in the first region side edge of the dummy region A vapor deposition mask characterized by being larger than the material remaining amount at the side edge of the second region,
It is.

In the vapor deposition mask according to the present invention,
The dummy region further has a region central portion provided between the first region side edge and the second region side edge,
The material remaining amount in the center of the region is smaller than the material remaining amount in the first region side edge and larger than the material remaining amount in the second region side edge,
You may do it.

In the vapor deposition mask according to the present invention,
In the dummy region, the first surface dummy opening is provided on the first surface, and the second surface dummy opening is provided on the second surface,
The dummy region is defined by the first surface dummy opening and the second surface dummy opening, and a dummy hole penetrating the dummy region is provided.
You may do it.

In the vapor deposition mask according to the present invention,
In the dummy region, the first surface dummy opening is provided in the first surface,
A first dummy recess defined by the first surface dummy opening is provided in the dummy region;
You may do it.

In the vapor deposition mask according to the present invention,
In the dummy region, the second surface dummy opening is provided in the second surface,
A second dummy recess defined by the second surface dummy opening is provided in the dummy region;
You may do it.

In the vapor deposition mask according to the present invention,
In the dummy region, the first surface dummy opening is provided on the first surface, and the second surface dummy opening is provided on the second surface,
A first dummy recess defined by the first surface dummy opening is provided in the dummy region, and a second dummy recess defined by the second surface dummy opening is provided,
When viewed along the normal direction of the vapor deposition mask, the first surface dummy openings and the second surface dummy openings are alternately arranged.
You may do it.

The present invention also provides:
A vapor deposition mask including a first surface and a second surface located on the opposite side of the first surface,
A first effective region in which a plurality of through holes are formed;
In a second direction orthogonal to the first direction of the vapor deposition mask, a second effective region provided at a position different from the first effective region, wherein a plurality of through holes are formed. When,
A pair of ears provided on both sides of the first effective area and the second effective area in the first direction of the vapor deposition mask;
A first surface dummy opening provided on the first surface of the vapor deposition mask and a second surface provided on the second surface, interposed between at least one of the pair of ears and the first effective region. A first dummy region in which at least one of the surface dummy openings is formed;
A first surface dummy opening provided on the first surface of the vapor deposition mask and a second surface provided on the second surface, interposed between at least one of the pair of ears and the second effective region. A second dummy region in which at least one of the surface dummy openings is formed,
The volume per unit area V, and the thickness t _u, when the material remaining amount of the material of the deposition mask was V / t _u, the material remaining amount in the first dummy area, the second dummy area A deposition mask characterized by being larger than the material remaining amount in
It is.

In the vapor deposition mask according to the present invention,
The second effective area is provided closer to the center in the second direction of the vapor deposition mask than the first effective area.
You may do it.

The present invention also provides:
A vapor deposition mask intermediate for producing a first vapor deposition mask and a second vapor deposition mask,
A long metal plate including a first surface and a second surface located on the opposite side of the first surface;
A first effective area provided on the metal plate, constituting the first vapor deposition mask, and having a plurality of through holes;
A second effective region provided on the center side in the width direction of the metal plate with respect to the first effective region, the second effective region constituting the second vapor deposition mask and having a plurality of through holes; ,
A dummy region provided on at least one side of both sides of the first effective region in the longitudinal direction of the metal plate, constituting the first vapor deposition mask, and provided on the first surface of the metal plate A dummy region in which at least one of the first surface dummy opening and the second surface dummy opening provided in the second surface is formed,
The dummy region includes a first region side edge provided on the side opposite to the second deposition mask side, and a second region side edge provided on the second deposition mask side,
When the volume per unit area is V, the thickness is t _u , and the material remaining amount of the material constituting the first vapor deposition mask is V / _tu , the material remaining at the side edge of the dummy region in the first region A deposition mask intermediate characterized in that the amount is greater than the amount of material remaining at the edge of the second region;
It is.

Furthermore, the present invention provides
A vapor deposition mask intermediate for producing a vapor deposition mask,
A long metal plate including a first surface and a second surface located on the opposite side of the first surface;
A first effective region provided in the metal plate, wherein the first effective region has a plurality of through holes;
A second effective region provided on the center side in the width direction of the metal plate from the first effective region, wherein the second effective region is formed with a plurality of through holes;
Provided on at least one side of both sides of the first effective area in the longitudinal direction of the metal plate, and provided on the first surface dummy opening and the second surface provided on the first surface of the metal plate. A first dummy region in which at least one of the second surface dummy openings is formed;
Provided on at least one side of both sides of the second effective region in the longitudinal direction of the metal plate, and provided on a first surface dummy opening provided on the first surface of the metal plate and the second surface. A second dummy region in which at least one of the second surface dummy openings is formed,
The volume per unit area V, and the thickness t _u, when the material remaining amount of the material of the deposition mask was V / t _u, the material remaining amount in the first dummy area, the second dummy area An evaporation mask intermediate characterized in that it is larger than the material remaining amount in
It is.

  According to the present invention, it is possible to improve the positional accuracy of the through-hole during tensioning.

FIG. 1 is a schematic plan view showing an example of a vapor deposition mask apparatus including a vapor deposition mask in the embodiment of the present invention. FIG. 2 is a view for explaining a method of vapor deposition using the vapor deposition mask apparatus shown in FIG. FIG. 3 is a partial plan view showing an effective area of the vapor deposition mask shown in FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. FIG. 5 is a cross-sectional view taken along line VV in FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 7 is an enlarged cross-sectional view of the through hole shown in FIG. 4 and a region in the vicinity thereof. FIG. 8A is a partially enlarged plan view schematically showing an example of the dummy region in FIG. FIG. 8B is a partially enlarged plan view schematically showing another example of the dummy region in FIG. 1. FIG. 9A is a partially enlarged plan view showing an example of a top portion in the dummy region of FIG. FIG. 9B is a partially enlarged plan view showing another example of the top portion in the dummy region of FIG. FIG. 10 is a diagram for explaining a method of obtaining the material remaining amount in the dummy region shown in FIG. 8A or 8B. FIG. 11 is a perspective view showing an example of a vapor deposition mask intermediate for producing the vapor deposition mask shown in FIG. 1 by etching. FIG. 12 is a plan view showing a vapor deposition mask obtained from the vapor deposition mask intermediate of FIG. 11 in a state where the vapor deposition mask is allocated to a long metal substrate. FIG. 13 is a diagram illustrating a process of rolling a base material to obtain a metal plate having a desired thickness. FIG. 14 is a diagram showing a step of annealing a metal plate obtained by rolling. FIG. 15 is a schematic diagram for entirely explaining an example of the manufacturing method of the vapor deposition mask shown in FIG. 1. FIG. 16 is a view for explaining an example of a method for manufacturing the vapor deposition mask shown in FIG. 1, and is a cross-sectional view showing a step of forming a resist film on a metal plate. FIG. 17 is a view for explaining an example of the manufacturing method of the vapor deposition mask shown in FIG. 1, and is a cross-sectional view showing a step of closely attaching the exposure mask to the resist film. FIG. 18 is a diagram for explaining an example of a method of manufacturing the vapor deposition mask shown in FIG. 1, and is a diagram showing a step of developing a resist film. FIG. 19 is a diagram for explaining an example of a method of manufacturing the vapor deposition mask shown in FIG. 1 and showing a second surface etching step. FIG. 20 is a diagram for explaining an example of the manufacturing method of the vapor deposition mask shown in FIG. 1, and is a diagram illustrating a process of covering the second concave portion with a resin. FIG. 21 is a diagram for explaining an example of the manufacturing method of the vapor deposition mask shown in FIG. 1, and is a diagram showing a first surface etching step. FIG. 22 is a view for explaining an example of the manufacturing method of the vapor deposition mask shown in FIG. 1, and is a view showing a first surface etching step following FIG. FIG. 23 is a diagram for explaining an example of the manufacturing method of the vapor deposition mask shown in FIG. 1, and is a diagram showing a process of removing the resin from the long metal plate. FIG. 24 is a plan view showing a modification of the arrangement of the plurality of through holes of the vapor deposition mask. FIG. 25 is a partially enlarged plan view schematically showing a modification of the dummy area. 26 is a cross-sectional view corresponding to the line IV-IV of FIG. 3, showing a modification of the vapor deposition mask of FIG. FIG. 27 is a partially enlarged plan view schematically showing the dummy region shown in FIG. FIG. 28 is an enlarged plan view showing an effective area of the vapor deposition mask produced by plating. 29 is a cross-sectional view of the effective region of FIG. 28 as viewed from the XX direction. FIG. 30 is an enlarged sectional view showing the effective area of FIG. FIG. 31 is a diagram illustrating an example of a method for manufacturing a vapor deposition mask. FIG. 32 is a diagram illustrating an example of a method for manufacturing a vapor deposition mask. FIG. 33 is a diagram illustrating an example of a method for manufacturing a vapor deposition mask. FIG. 34 is a diagram illustrating an example of a method for manufacturing a vapor deposition mask. FIG. 35 is a perspective view showing a vapor deposition mask intermediate for producing the vapor deposition mask shown in FIG. 1 by plating. FIG. 36 is a diagram for explaining a modification of the method for manufacturing the vapor deposition mask. FIG. 37 is a diagram for explaining a modification of the method for manufacturing the vapor deposition mask. FIG. 38 is a cross-sectional view showing a modification of the vapor deposition mask. FIG. 39 is a plan view showing an example of a vapor deposition mask having effective areas arranged in a lattice pattern. FIG. 40 is a perspective view showing an example of a vapor deposition mask intermediate for producing the vapor deposition mask shown in FIG. 39 by etching. FIG. 41 is a perspective view showing an example of a vapor deposition mask intermediate for producing a vapor deposition mask having effective areas arranged in a grid pattern by an etching process.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings attached to the present specification, for the sake of illustration and ease of understanding, the scale, the vertical / horizontal dimension ratio, and the like are appropriately changed and exaggerated from those of the actual product.

  FIGS. 1-41 is a figure for demonstrating one Embodiment and its modification by this invention. In the following embodiments and modifications thereof, a vapor deposition mask and a vapor deposition mask intermediate used for patterning an organic material on a substrate in a desired pattern when manufacturing an organic EL display device will be described as examples. . However, the present invention can be applied to a vapor deposition mask and a vapor deposition mask intermediate used for various purposes without being limited to such application.

  In the present specification, the terms “plate”, “sheet”, and “film” are not distinguished from each other only based on the difference in names. For example, “a plate” is a concept that includes a member that can be called a sheet or a film. Therefore, for example, a “metal plate” is distinguished from a member called “a metal sheet” or “a metal film” only by a difference in the name. Can't be done.

  In addition, “plate surface (sheet surface, film surface)” means a target plate-like member (sheet-like) when the target plate-like (sheet-like, film-like) member is viewed as a whole and globally. It refers to the surface that coincides with the plane direction of the member or film-like member. Moreover, the normal direction used with respect to a plate-like (sheet-like, film-like) member refers to the normal direction with respect to the plate | board surface (sheet surface, film surface) of the said member.

  Further, as used herein, the shape, geometric conditions and physical characteristics and their degree are specified, for example, terms such as “parallel”, “orthogonal”, “identical”, “equivalent”, lengths and angles In addition, values of physical characteristics and the like are not limited to a strict meaning and are interpreted to include a range where a similar function can be expected.

(Deposition mask device)
First, an example of a vapor deposition mask apparatus including a vapor deposition mask will be described mainly with reference to FIGS. Here, FIG. 1 is a plan view showing an example of a vapor deposition mask device including a vapor deposition mask, and FIG. 2 is a diagram for explaining a method of using the vapor deposition mask device shown in FIG. FIG. 3 is a plan view showing the vapor deposition mask from the first surface side, and FIGS. 4 to 6 are cross-sectional views at respective positions in FIG. Among these, FIG. 4 also shows a dummy hole 86 (described later) of the dummy region 80 in addition to the cross section taken along the line IV-IV in FIG. 3.

  The vapor deposition mask device 10 shown in FIGS. 1 and 2 includes a plurality of vapor deposition masks 20 made of a substantially rectangular metal plate 21 and a frame 15 attached to the peripheral edge of the plurality of vapor deposition masks 20. Yes. Each vapor deposition mask 20 is formed by etching the metal plate 21 including the first surface 21a and the second surface 21b located on the opposite side of the first surface 21a on both the first surface 21a side and the second surface 21b side. A large number of through-holes 25 are formed. As shown in FIG. 2, the vapor deposition mask device 10 is supported in the vapor deposition device 90 so that the vapor deposition mask 20 faces the lower surface of a substrate 92, for example, a glass substrate, which is a vapor deposition target, and vapor deposition onto the substrate 92 is performed. Used to deposit material 98.

  In the vapor deposition apparatus 90, the vapor deposition mask 20 and the substrate 92 come into close contact with each other by a magnetic force from a magnet (not shown). In the vapor deposition apparatus 90, a crucible 94 for accommodating a vapor deposition material (for example, an organic light emitting material) 98 and a heater 96 for heating the crucible 94 are disposed below the vapor deposition mask apparatus 10. The vapor deposition material 98 in the crucible 94 is vaporized or sublimated by the heating from the heater 96 and adheres to the surface of the substrate 92. As described above, a large number of through holes 25 are formed in the vapor deposition mask 20, and the vapor deposition material 98 adheres to the substrate 92 through the through holes 25. As a result, the vapor deposition material 98 is formed on the surface of the substrate 92 in a desired pattern corresponding to the position of the through hole 25 of the vapor deposition mask 20.

  As described above, in the present embodiment, the through holes 25 are arranged in a predetermined pattern in each effective region 22 described later. When color display is desired, the vapor deposition mask 20 (vapor deposition mask device 10) and the substrate 92 are relatively moved little by little along the arrangement direction of the through holes 25 (one direction described above), and the red organic The light emitting material, the green organic light emitting material, and the blue organic light emitting material may be deposited in this order. Alternatively, the vapor deposition material 98 may be formed on the surface of the substrate 92 using different vapor deposition masks 20 depending on the color of the organic light emitting material.

  The frame 15 of the vapor deposition mask device 10 is attached to the peripheral edge of the rectangular vapor deposition mask 20. The frame 15 holds the vapor deposition mask 20 in a stretched state so that the vapor deposition mask 20 is not bent. The vapor deposition mask 20 and the frame 15 are fixed to each other, for example, by spot welding.

  The vapor deposition process is performed inside the vapor deposition apparatus 90 that is in a high temperature atmosphere. Therefore, during the vapor deposition process, the vapor deposition mask 20, the frame 15 and the substrate 92 held inside the vapor deposition apparatus 90 are also heated. At this time, the vapor deposition mask 20, the frame 15, and the substrate 92 exhibit dimensional change behavior based on their respective thermal expansion coefficients. In this case, if the thermal expansion coefficients of the vapor deposition mask 20 and the frame 15 and the substrate 92 are greatly different, a positional shift due to a difference in their dimensional change occurs, and as a result, the vapor deposition material 98 adhering on the substrate 92 is changed. Dimensional accuracy and position accuracy will decrease. In order to solve such a problem, it is preferable that the thermal expansion coefficients of the vapor deposition mask 20 and the frame 15 are equal to the thermal expansion coefficient of the substrate 92. For example, when a glass substrate is used as the substrate 92, an iron alloy containing nickel can be used as the main material of the vapor deposition mask 20 and the frame 15. For example, an iron alloy containing 30 to 54% by mass of nickel can be used as the material of the metal plate constituting the vapor deposition mask 20. Specific examples of the iron alloy containing nickel include an invar material containing 34 to 38 mass% nickel, a super invar material further containing cobalt in addition to 30 to 34 mass% nickel, and 48 to 54 mass% nickel. Examples thereof include a low thermal expansion Fe—Ni plating alloy. In the present specification, the numerical range represented by the symbol “to” includes numerical values placed before and after the symbol “to”. For example, the numerical range defined by the expression “34-38 mass%” is the same as the numerical range defined by the expression “34 mass% or more and 38 mass% or less”.

  In the vapor deposition process, if the temperature of the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 does not reach a high temperature, the thermal expansion coefficient of the vapor deposition mask 20 and the frame 15 is equal to the thermal expansion coefficient of the organic EL substrate 92. There is no need to make the value of. In this case, a material other than the above-described iron alloy may be used as a material of a metal plate 21 to be described later constituting the vapor deposition mask 20. For example, an iron alloy other than the above-described iron alloy containing nickel, such as an iron alloy containing chromium, may be used. As the iron alloy containing chromium, for example, an iron alloy called so-called stainless steel can be used. Moreover, you may use alloys other than iron alloys, such as nickel and a nickel- cobalt alloy.

  First, the case where the vapor deposition mask 20 shown in FIG. 1 is produced by an etching process will be described.

(Deposition mask)
As shown in FIG. 1, in the present embodiment, the vapor deposition mask 20 is made of a metal plate 21 and has a substantially rectangular shape in a plan view, more precisely a substantially rectangular shape in a plan view. The vapor deposition mask 20 includes an effective region 22 in which the through holes 25 are formed in a regular arrangement, and a peripheral region 23 located around the effective region 22. The surrounding area 23 is an area for supporting the effective area 22 and is not an area through which the vapor deposition material 98 intended to be deposited on the substrate 92 passes. For example, in the vapor deposition mask 20 used for vapor deposition of an organic light emitting material for an organic EL display device, the effective region 22 is an area on the substrate 92 where the organic light emitting material is deposited to form a pixel, that is, production. This is a region in the vapor deposition mask 20 that faces an area on the substrate 92 that forms the display surface of the organic EL display device substrate. However, through holes and recesses may be formed in the peripheral region 23 for various purposes. In the example shown in FIG. 1, each effective region 22 has a substantially rectangular shape in plan view, more precisely, a substantially rectangular shape in plan view.

  In the illustrated example, the plurality of effective regions 22 of the vapor deposition mask 20 are arranged in a row at a predetermined interval along one direction parallel to the longitudinal direction of the vapor deposition mask 20. Such a vapor deposition mask 20 may be referred to as a so-called stick-shaped vapor deposition mask. In the illustrated example, one effective area 22 corresponds to one organic EL display device. That is, according to the vapor deposition mask apparatus 10 (deposition mask 20) shown in FIG. 1, vapor deposition with multiple surfaces is possible.

  As shown in FIG. 3, in the illustrated example, the plurality of through holes 25 formed in each effective region 22 are arranged at a predetermined pitch along two directions orthogonal to each other in the effective region 22. Yes. An example of the through hole 25 formed in the metal plate 21 will be described in more detail with reference mainly to FIGS.

  As shown in FIGS. 4 to 6, the plurality of through holes 25 extend along the normal direction N of the vapor deposition mask 20 from the first surface 20 a on one side along the normal direction N of the vapor deposition mask 20. It penetrates to the second surface 20b on the other side. In the illustrated example, as will be described in detail later, a first recess 30 is formed by etching on the first surface 21a of the metal plate 21 on one side in the normal direction N of the deposition mask 20, and the deposition mask 20 A second recess 35 is formed on the second surface 21 b of the metal plate 21 on the other side in the normal direction N. The 1st recessed part 30 is connected to the 2nd recessed part 35, and is formed so that the 2nd recessed part 35 and the 1st recessed part 30 may mutually communicate by this. The through hole 25 is configured by a second recess 35 and a first recess 30 connected to the second recess 35.

  As shown in FIGS. 3 to 6, the plate of the vapor deposition mask 20 at each position along the normal direction N of the vapor deposition mask 20 from the second surface 20 b side of the vapor deposition mask 20 toward the first surface 20 a side. The opening area of each second recess 35 in the cross section along the plane is gradually reduced. Similarly, the opening area of each first recess 30 in the cross section along the plate surface of the vapor deposition mask 20 at each position along the normal direction N of the vapor deposition mask 20 is from the first surface 20a side of the vapor deposition mask 20. It gradually becomes smaller toward the second surface 20b.

  As shown in FIGS. 4 to 6, the wall surface 31 of the first recess 30 and the wall surface 36 of the second recess 35 are connected via a circumferential connecting portion 41. In the connection portion 41, the wall surface 31 of the first recess 30 inclined with respect to the normal direction N of the vapor deposition mask 20 and the wall surface 36 of the second recess 35 inclined with respect to the normal direction N of the vapor deposition mask 20 merge. It is defined by the ridgeline of the overhanging part. And the connection part 41 defines the penetration part 42 with which the opening area of the through-hole 25 becomes the minimum in the planar view of the vapor deposition mask 20.

  As shown in FIGS. 4 to 6, two adjacent through holes 25 are formed on the other surface along the normal direction N of the vapor deposition mask 20, that is, on the first surface 20 a of the vapor deposition mask 20. They are separated from each other along the plate surface of the mask 20. That is, when the metal plate 21 is etched from the side of the first surface 21a of the metal plate 21 corresponding to the first surface 20a of the vapor deposition mask 20 as in the manufacturing method described later, the first recess 30 is produced. The first surface 21 a of the metal plate 21 remains between two adjacent first recesses 30.

  Similarly, as shown in FIG. 4 and FIG. 6, two adjacent second concave portions on one side along the normal direction N of the vapor deposition mask 20, that is, on the second surface 20 b side of the vapor deposition mask 20. 35 may be separated from each other along the plate surface of the vapor deposition mask 20. That is, the second surface 21b of the metal plate 21 may remain between two adjacent second recesses 35. In the following description, the portion of the effective area 22 of the second surface 21 b of the metal plate 21 that remains without being etched is also referred to as a top portion 43. By producing the vapor deposition mask 20 so that such a top portion 43 remains, the vapor deposition mask 20 can have sufficient strength. This can prevent the vapor deposition mask 20 from being damaged, for example, during transportation. If the width β of the top portion 43 is too large, shadowing may occur in the vapor deposition process, which may reduce the utilization efficiency of the vapor deposition material 98. Therefore, it is preferable that the vapor deposition mask 20 is manufactured so that the width β of the top portion 43 does not become excessively large. For example, the width β of the top part 43 is preferably 2 μm or less. Note that the width β of the top portion 43 generally varies depending on the direction in which the vapor deposition mask 20 is cut. For example, the width β of the top portion 43 shown in FIGS. 4 and 6 may be different from each other. In this case, the vapor deposition mask 20 may be configured such that the width β of the top portion 43 is 2 μm or less when the vapor deposition mask 20 is cut in any direction.

  In addition, as shown in FIG. 5, etching may be implemented so that two adjacent 2nd recessed parts 35 may be connected depending on a place. That is, a place where the second surface 21b of the metal plate 21 does not remain may exist between two adjacent second recesses 35.

  When the vapor deposition mask apparatus 10 is accommodated in the vapor deposition apparatus 90 as shown in FIG. 2, the crucible 94 side on which the second surface 20b of the vapor deposition mask 20 holds the vapor deposition material 98, as shown by a two-dot chain line in FIG. The first surface 20 a of the vapor deposition mask 20 faces the substrate 92. Therefore, the vapor deposition material 98 adheres to the substrate 92 through the second recess 35 whose opening area is gradually reduced. As shown by the arrow from the second surface 20b side to the first surface 20a in FIG. 4, the deposition material 98 not only moves along the normal direction N of the substrate 92 from the crucible 94 toward the substrate 92, The substrate 92 may move in a direction greatly inclined with respect to the normal direction N of the substrate 92. At this time, when the thickness of the vapor deposition mask 20 is large, most of the vapor deposition material 98 that moves obliquely reaches the wall surface 36 of the second recess 35 before reaching the substrate 92 through the through hole 25. Adhere to. Therefore, in order to increase the utilization efficiency of the vapor deposition material 98, the thickness t of the vapor deposition mask 20 is reduced, thereby reducing the height of the wall surface 36 of the second recess 35 and the wall surface 31 of the first recess 30. It is considered preferable. That is, it can be said that it is preferable to use a metal plate 21 having a thickness t as small as possible as long as the strength of the vapor deposition mask 20 can be secured as the metal plate 21 for constituting the vapor deposition mask 20. In consideration of this point, in the present embodiment, the thickness t of the vapor deposition mask 20 is preferably set to 85 μm or less, for example, in the range of 5 to 85 μm. The thickness t is the thickness of the surrounding region 23, that is, the thickness of the portion of the vapor deposition mask 20 where the first recess 30 and the second recess 35 are not formed. Therefore, it can be said that the thickness t is the thickness of the metal plate 21.

  In FIG. 4, a straight line L <b> 1 that passes through the connection portion 41, which is a portion having the minimum opening area of the through hole 25, and another arbitrary position of the wall surface 36 of the second recess 35 is a normal direction of the vapor deposition mask 20. The minimum angle made with respect to N is represented by the symbol θ1. In order to make the vapor deposition material 98 moving obliquely reach the substrate 92 as much as possible without reaching the wall surface 36, it is advantageous to increase the angle θ1. In order to increase the angle θ1, in addition to reducing the thickness t of the vapor deposition mask 20, it is also effective to reduce the width β of the top portion 43 described above.

In FIG. 6, symbol α represents the width of a portion (hereinafter also referred to as a rib portion) that remains in the effective region 22 of the first surface 21 a of the metal plate 21 without being etched. The width α of the rib part and the dimension r ₂ of the through part 42 are appropriately determined according to the dimension of the organic EL display device and the number of display pixels. Table 1 shows an example of the number of display pixels and the value of the width α of the rib portion and the dimension r ₂ of the through portion 42 obtained according to the number of display pixels and the number of display pixels in the 5-inch organic EL display device.

  Although not limited, the vapor deposition mask 20 according to the present embodiment is particularly effective when an organic EL display device having a pixel density of 450 ppi or more is manufactured. Hereinafter, an example of the dimensions of the vapor deposition mask 20 required for producing such an organic EL display device having a high pixel density will be described with reference to FIG. FIG. 7 is an enlarged cross-sectional view showing the through hole 25 of the vapor deposition mask 20 shown in FIG.

In FIG. 7, as a parameter related to the shape of the through hole 25, the distance in the direction along the normal direction N of the vapor deposition mask 20 from the first surface 20 a of the vapor deposition mask 20 to the connection portion 41, that is, the first concave portion. the height of the wall 31 of the 30 is represented by reference numeral _{r 1.} Furthermore, the first recess 30 dimensions of the first recess 30 in the portion connected to the second recess 35, i.e. the dimension of the through region 42 is represented by reference numeral r _2. In FIG. 7, the angle formed by the straight line L2 connecting the connecting portion 41 and the leading edge of the first recess 30 on the first surface 21a of the metal plate 21 with respect to the normal direction N of the metal plate 21 is It is represented by the symbol θ2.

The case of manufacturing an organic EL display apparatus having the above pixel density 450Ppi, dimension _{r 2} of the penetrating part 42 is preferably set in the range of 10 to 60 [mu] m. Accordingly, it is possible to provide the vapor deposition mask 20 that can produce an organic EL display device having a high pixel density. Preferably, the height r ₁ of the wall surface 31 of the first recess 30 is set to 6 μm or less.

  Next, the above described angle θ2 shown in FIG. 7 will be described. The angle θ2 is inclined with respect to the normal direction N of the metal plate 21 and out of the vapor deposition material 98 that has come to pass through the through portion 42 in the vicinity of the connection portion 41, the vapor deposition material 98 that can reach the substrate 92. This corresponds to the maximum value of the inclination angle. This is because the vapor deposition material 98 that has come at an inclination angle larger than the angle θ2 adheres to the wall surface 31 of the first recess 30 before reaching the substrate 92. Therefore, by reducing the angle θ 2, it is possible to suppress the vapor deposition material 98 flying at a large inclination angle and passing through the through portion 42 from adhering to the substrate 92, and thereby the through portion 42 of the substrate 92. It can suppress that the vapor deposition material 98 adheres to the part outside the part which overlaps. That is, reducing the angle θ2 leads to suppression of variations in the area and thickness of the vapor deposition material 98 attached to the substrate 92. From such a viewpoint, for example, the through hole 25 is formed such that the angle θ2 is 45 degrees or less. In FIG. 7, the dimension of the first recess 30 in the first surface 21a, that is, the opening dimension of the through hole 25 in the first surface 21a is larger than the dimension r2 of the first recess 30 in the connection part 41. An example is shown. That is, the example in which the value of the angle θ2 is a positive value is shown. However, although not shown, the dimension r2 of the first recess 30 in the connection part 41 may be larger than the dimension of the first recess 30 in the first surface 21a. That is, the value of the angle θ2 may be a negative value.

  As shown in FIG. 1, a pair of ear portions 24 are provided on both sides of the effective region 22 in the longitudinal direction (first direction) of the vapor deposition mask 20. The ear | edge part 24 is located in the both ends 20e in the longitudinal direction of the vapor deposition mask 20. As shown in FIG. Here, the ear portion 24 is a portion of the vapor deposition mask 20 that is attached to the frame 15. In FIG. 1, the entire length of the vapor deposition mask 20 in the longitudinal direction and the length of the ear portion 24 are represented by reference signs A and A1, respectively. The overall length A of the vapor deposition mask 20 is, for example, in the range of 850 mm to 1350 mm, and the length A1 of the ear portion 24 is in the range of 50 mm to 250 mm. As described above, in the embodiment shown in FIG. 1, the pair of ear portions 24 are arranged in the longitudinal direction of the vapor deposition mask 20, and the first direction in which the pair of ear portions 24 are arranged is the longitudinal direction. Yes. When the entire length A (see FIG. 1) of the vapor deposition mask 20 is smaller than the width dimension of the vapor deposition mask 20 (dimension in the direction perpendicular to the direction indicated by the length A), the pair of ear portions 24 is used. The first direction in which is arranged is not the longitudinal direction of the vapor deposition mask 20 but the short direction, and even in this case, it is within the scope of the present invention.

  A dummy region 80 is interposed between each of the ear portions 24 and the effective region 22. In other words, dummy regions 80 are provided on both sides of the plurality of effective regions 22 in the longitudinal direction of the vapor deposition mask 20. When the vapor deposition mask 20 has only one effective area 22, the dummy area 80 may be provided on both sides of the single effective area 22.

  In the dummy region 80, the tension applied to the effective region 22 by the tension applied to the vapor deposition mask 20 at the time of stretching is applied to the width direction of the vapor deposition mask 20 (second direction, the direction orthogonal to the longitudinal direction of the vapor deposition mask 20). This is an area intended to be adjusted according to the position of. That is, the dummy area 80 is an area configured so that the extension of the dummy area 80 itself is different in the width direction when stretched on the frame 15. In FIG. 1, each dummy area 80 has a substantially rectangular shape in plan view, more precisely, a substantially rectangular outline in plan view, and the dummy area 80 has a plane shape equivalent to the effective area 22. An example is shown. Further, in the example shown in FIG. 1, the dummy areas 80 are arranged along the arrangement direction of the effective areas 22 (along the longitudinal direction of the vapor deposition mask 20), and are adjacent to the dummy areas 80. The interval between the effective regions 22 is equal to the interval between the adjacent effective regions 22. The surrounding area 23 described above is an area located not only in the effective area 22 but also around both the effective area 22 and the dummy area 80.

  As shown in FIGS. 8A and 8B, the dummy region 80 includes a first region side edge 81 provided on one side in the width direction of the vapor deposition mask 20 and the other side (relative to the first region side edge 81). A second region side edge portion 82 provided on the opposite side in the width direction, and a region center portion 83 provided between the first region side edge portion 81 and the second region side edge portion 82. doing. Among these, the 1st area | region side edge part 81 is a part arrange | positioned at the 1st side edge 20f side of the vapor deposition mask 20, and the 2nd area | region side edge part 82 is arrange | positioned at the 2nd side edge 20g side. It is a part that. The region central portion 83 is a region that is disposed more centrally than the first region side edge 81 and closer to the center than the second region side edge 82. Here, the region center portion 83 is a portion disposed at the center position in the width direction of the vapor deposition mask 20.

  As shown in FIG. 4, the dummy region 80 is provided with a plurality of first surface dummy openings 84 and a plurality of second surface dummy openings 85. Among these, the first surface dummy opening 84 is provided in the first surface 20 a of the vapor deposition mask 20, and the second surface dummy opening 85 is provided in the second surface 20 b of the vapor deposition mask 20. In the present embodiment, a dummy hole 86 defined by the above-described first surface dummy opening 84 and second surface dummy opening 85 is provided in the dummy region 80, and the dummy hole 86 is formed in the dummy region 80. It penetrates. In other words, the dummy hole 86 is defined by the first surface dummy opening 84 in the first surface 20a, and the dummy hole 86 is defined by the second surface dummy opening 85 in the second surface 20b. The opening shape of the first surface dummy opening 84 and the opening shape of the second surface dummy opening 85 are the same or similar. And the opening shape of the dummy hole 86 in the cross section along the plate | board surface of the vapor deposition mask 20 in each position along the normal line direction N of the vapor deposition mask 20 is the planar shape and 2nd surface of the 1st surface dummy opening part 84. It is the same or similar to the planar shape of the dummy opening 85. A large number of such dummy holes 86 are provided in each of the first region side edge 81, the second region side edge 82, and the region center 83.

  The material remaining amount of the material constituting the vapor deposition mask 20 in the dummy region 80 (here, the material constituting the metal plate 21) differs in the width direction of the vapor deposition mask 20. Here, the material remaining amount is an amount in which the material constituting the metal plate 21 remains in the dummy region 80 in which the plurality of dummy holes 86 are formed. More specifically, in the vapor deposition mask 20 produced by the etching process, the material remaining amount means the amount of the material of the metal plate 21 that remains without being removed by the etching process.

  In the present embodiment, as shown in FIGS. 8A and 8B, the material remaining amount at the first region side edge 81 of the dummy region 80 is larger than the material remaining amount at the second region side edge 82. Yes. Further, the material remaining amount in the region central portion 83 is smaller than the material remaining amount in the first region side edge 81 and larger than the material remaining amount in the second region side edge 82. When the region center portion 83 is disposed at the center position in the width direction of the vapor deposition mask 20, the material remaining amount in the region center portion 83 is equal to the material remaining amount in the first region side edge 81 and the second region side edge. The average value of the material remaining amount in the portion 82 is preferable. Furthermore, the material remaining amount of the dummy region 80 is divided not only into the first region side edge portion 81, the second region side edge portion 82 and the region center portion 83, but also into finer portions in the width direction. The remaining amount of material in the portion may be gradually increased from the second region side edge portion 82 toward the first region side edge portion 81.

  Next, a specific example of the dummy region 80 will be described with reference to FIGS. 8A and 8B. 8A and 8B are plan views schematically showing the first surface 20a of the vapor deposition mask 20. FIG. Here, as an example, an example in which the first surface dummy opening 84 is formed in a rectangular shape is shown. The center of the second surface dummy opening 85 (see FIG. 4) overlaps the center of the first surface dummy opening 84 in plan view. The first surface dummy openings 84 (and the second surface dummy openings 85) are arranged in a lattice pattern. In FIG. 8A and FIG. 8B, the second surface dummy opening 85 is not shown for clarity.

  In the form shown in FIG. 8A, a large number of first surface dummy openings 84 having the same opening area are formed on the first surface 20 a of the vapor deposition mask 20. Here, the arrangement pitch of the first surface dummy openings 84 in the width direction of the vapor deposition mask 20 differs depending on the position in the width direction. More specifically, the arrangement pitch P1 in the width direction at the first region side edge 81 is set larger than the arrangement pitch P2 in the width direction at the second region side edge 82 (P1> P2). As a result, the remaining amount of the remaining amount at the first region side edge 81 can be made larger than the remaining amount of the material at the second region side edge 82. Further, in the present embodiment, the evaporation at the region center portion 83 is performed. The arrangement pitch P3 in the width direction of the mask 20 is smaller than the arrangement pitch P1 at the first region side edge 81 and larger than the arrangement pitch P2 at the second region side edge 82 (P1> P3> P2). ). Thus, the material remaining amount in the region center portion 83 can be made smaller than the material remaining amount in the first region side edge 81 and larger than the material remaining amount in the second region side edge 82. Note that the above-described arrangement pitches P1, P2, and P3 may be arranged in the longitudinal direction of the vapor deposition mask 20 instead of the width direction of the vapor deposition mask 20.

  In the form shown in FIG. 8B, many first surface dummy openings 84 having the same arrangement pitch are formed on the first surface 20 a of the vapor deposition mask 20. Here, the opening area of the first surface dummy opening 84 differs depending on the position of the vapor deposition mask 20 in the width direction. More specifically, the dimension B1 of the vapor deposition mask 20 in the longitudinal direction of the first surface dummy opening 84 at the first region side edge 81 is set to the length B1 of the first surface dummy opening 84 at the second region side edge 82. It is smaller than the dimension B2 in the longitudinal direction (B1 <B2). Thus, the material remaining amount at the first region side edge 81 can be made larger than the material remaining amount at the second region side edge 82. Furthermore, in the present embodiment, the dimension B3 in the longitudinal direction of the first surface dummy opening 84 in the region central portion 83 is larger than the dimension B1 of the first surface dummy opening 84 in the first region side edge 81, And it is made smaller than the dimension B2 of the 1st surface dummy opening part 84 in the 2nd area | region side edge part 82 (B1 <B3 <B2). Thus, the material remaining amount in the region center portion 83 can be made smaller than the material remaining amount in the first region side edge 81 and larger than the material remaining amount in the second region side edge 82. In addition, it is not restricted to changing the dimension of the said longitudinal direction of the 1st surface dummy opening part 84, By changing the dimension of the width direction of the vapor deposition mask 20 among the 1st surface dummy opening parts 84, it is 1st surface. The opening area of the dummy opening 84 may be changed.

  Like the through hole 25 described above, such a dummy hole 86 penetrates the metal plate 21 by etching from the first surface 21a side of the metal plate 21 and etching from the second surface 21b side. Can be formed. The cross-sectional shape of the dummy hole 86 is not particularly limited. For example, the dummy hole 86 can have the same shape as the through-hole 25 formed in the effective region 22 as shown in FIG.

  As shown in FIG. 4, the first surface 21 a of the metal plate 21 remains between two adjacent first surface dummy openings 84. Further, the second surface 21b of the metal plate 21 remains between two adjacent second surface dummy openings 85, and a top portion 89 similar to the top portion 43 of the effective region 22 (see FIGS. 9A and 9B). ) Is formed. By forming the top portion 89, the vapor deposition mask 20 can have sufficient strength, and for example, the vapor deposition mask 20 can be prevented from being damaged during transportation.

  The shape of the top portion 89 of the dummy region 80 varies depending on the arrangement pitch of the second surface dummy openings 85, the opening area, and the like. For example, when the arrangement pitch of the second surface dummy openings 85 is increased, as shown in FIG. 9A, the two adjacent second surface dummy openings 85 are separated from each other, so that the top portion 89 has the second surface dummy openings. It is formed around the portion 85. On the other hand, when the arrangement pitch of the two adjacent second-surface dummy openings 85 becomes small, the two adjacent second-surface dummy openings 85 approach each other as shown in FIG. Between the second surface dummy openings 85 adjacent to each other. However, the top portion 89 is not formed between the two second-surface dummy openings 85 adjacent in the longitudinal direction and the width direction (the horizontal direction and the vertical direction in FIG. 9B) of the vapor deposition mask 20, and these two are not formed. The second surface dummy openings 85 are connected to each other. Although not shown, when the opening area of the second surface dummy opening 85 is reduced, a top portion 89 as shown in FIG. 9A tends to be formed. On the other hand, when the opening area of the second surface dummy opening 85 is reduced, a top portion 89 as shown in FIG. 9B tends to be formed. Further, when the arrangement pitch of the second surface dummy openings 85 becomes excessively small or the opening area becomes excessively large, the above-described top portion 89 tends not to be formed, but the strength of the vapor deposition mask 20 is ensured. For this purpose, it is preferable to set the arrangement pitch and the opening area of the second surface dummy openings 85 so that such a top part 89 is formed.

  8A and 8B show an example in which the planar shape of the first surface dummy opening 84 and the planar shape of the second surface dummy opening 85 are rectangular. However, the present invention is not limited to this, and the planar shape of the dummy hole 86 can be an arbitrary shape such as a slit shape or a circular shape.

Here, the material remaining amount will be described in more detail. Material remaining amount of the material constituting the deposition mask 20 (the material constituting the metal plate 21 in this case), the volume per unit area V, and thickness when a t _u, is defined by V / t _u. For example, as shown in FIG. 10, a predetermined reference region U in the dummy region 80 is defined, and the volume V per unit area is obtained from the area S _U and the volume V _{U of the} reference region U, and the thickness t _u is determined. Can determine the remaining material amount as the thickness of the reference region U. Here, the reference region U can be an arbitrary region in the dummy region 80, but can be, for example, a region having a circular planar shape as shown in FIG.

The thickness _tu may be, for example, the thickness of the center position Ou of the reference region U or a position near the center position Ou. More specifically, the thickness t _u is the center position Ou or the center the first face 20a and second face 20b of the position Ou deposition mask 20 in the top portion 89 which is formed in the vicinity of the (metal plate 21 is here The distance between the first surface 21a and the second surface 21b). The thickness t _u is meant a local thickness at each position in the width direction of the evaporation mask 20, the thickness t of the deposition mask 20 described above, refers to the overall average thickness of the deposition mask 20 doing.

  The material remaining amount defined as described above is an amount excluding the influence of the thickness of the dummy region 80. That is, when the thickness of the vapor deposition mask 20 differs in the width direction, it is considered that the remaining amount of material also changes due to the difference in thickness. However, in the present embodiment, the aperture ratio of the dummy holes 86 is changed in the width direction of the vapor deposition mask 20 according to the arrangement pitch and size of the first surface dummy openings 84 and the second surface dummy openings 85, and the like. The elongation rate of the dummy region 80 is varied in the width direction. Therefore, by defining the material residual amount as described above, the material residual amount of the dummy region 80 that can affect the elongation rate of the dummy region 80 is defined by eliminating the influence of the difference in thickness of the dummy region 80. can do.

  Next, a method for obtaining the material remaining amount will be described.

  First, as shown in FIG. 10, the reference region U is cut out as a metal piece from the first region side edge 81, the second region side edge 82 and the region center 83 of the dummy region 80. In this case, it is preferable that all the reference areas U cut from the respective parts 81 to 83 have the same area. Here, an example in which the reference region U to be cut out has a circular planar shape is shown. The diameter of the reference region U has such a size that the volume can be accurately measured and the number of dummy holes 86 can be included so that the influence of the arrangement of the dummy holes 86 can be eliminated. There is no particular limitation. For example, when the width of the dummy area 80 is 80 mm, the diameter of the reference area U is preferably 20 mm. The method for cutting out the reference region U is not particularly limited. For example, methods such as punching using a die, machining using a cutting tool, and cutting using a laser can be used. In particular, according to punching using a mold, the size and shape of the reference region U cut out from each of the parts 81 to 83 can be made the same with high accuracy. The reference regions U cut out from the respective portions 81 to 83 are not necessarily limited to those having the same shape as long as they have the same area, but the reference regions cut out from the respective portions 81 to 83 are used. When U has the same shape as each other, the reference region U can be cut out from each of the parts 81 to 83 by punching using the above-described mold, thereby improving the cutting accuracy and simplifying the cutting process. it can.

Subsequently, the area S _U and the volume V _{U of} the cut reference region _U are obtained. Area S _U of these reference area U is determined as a planar area of the reference region U when viewed along the normal direction N of the evaporation mask 20 as shown in FIG. 10. The volume V _U of the reference region U can be measured using, for example, a helium (He) gas replacement method. In this case, since the volume is measured by gas phase substitution, the measurement accuracy of the volume of the reference region U can be improved even in the reference region U in which a large number of minute dummy holes 86 are formed. For measuring the volume, for example, a specific gravity bottle density measuring device (AccuPyc II 1340) manufactured by Micromeritics can be used.

As another method for obtaining the volume V _U of the reference region U, there is a method for obtaining the volume V _U of the reference region _U from the weight W and the density ρ. In this method, the weight W of the reference region U is measured, and the chemical analysis of the reference region U is performed to determine the composition. The density of the alloy that matches the obtained composition is obtained from the values described in the literature, and the density of the reference region U is obtained. The volume V _U of the reference region U can be obtained from the weight and density thus obtained. The density ρ is, for example, a predetermined value from a flat portion (usually considered to have the same composition as the reference region U) in the surrounding region 23 of the vapor deposition mask 20 where no hole or recess is formed. The region can be cut out as a metal piece, the weight of the region can be measured, and the volume can be measured in the same manner as described above, and the density can be obtained from these weights and volumes to be substituted.

Next, the thickness t _u at a position near the center position Ou or the center position Ou of cropped reference region U is measured. As a measuring method of thickness, the method of measuring using a micrometer is mentioned, for example. In addition to this method, for example, there is a method of measuring using fluorescent X-rays. In this method, X-rays are applied to the top part 89 of the reference region U, and fluorescent X-rays emitted from the top part 89 are measured. This is based on the fact that the intensity of the measured fluorescent X-ray depends on the amount of the element constituting the top portion 89 (that is, the element constituting the metal plate 21), and by extension, the thickness of the top portion 89.

Thereafter, the volume V _U of the reference area U is divided by the area S _U of the reference area U to obtain the volume V per unit area, and the volume V per unit area is determined as the measured reference. by dividing the thickness t _u of the top portion 89 of the region U, the material remaining amount in the reference region U is obtained.

(Vapor deposition mask intermediate)
By the way, the vapor deposition mask 20 according to the present embodiment described above forms a plurality of effective regions 22 including a plurality of through holes 25 corresponding to one organic EL display device on a long metal plate 64 described later, and thereafter It is obtained by cutting the length metal plate 64 into a plurality. As a result, a plurality of elongated vapor deposition masks 20 are manufactured at a time. In this case, as shown in FIG. 11, a vapor deposition mask intermediate 100 in which a plurality of effective regions 22A and 22B are formed on a long metal plate 64 so that a plurality of vapor deposition masks 20 are assigned is produced. The scale metal plate 64 is cut to obtain individual vapor deposition masks 20A and 20B.

  Next, the vapor deposition mask intermediate body 100 is demonstrated using FIG. 11 and FIG. The vapor deposition mask intermediate 100 is for manufacturing a plurality of vapor deposition masks (here, the first vapor deposition mask 20A and the second vapor deposition mask 20B) with multiple faces. The vapor deposition mask intermediate 100 can also be said to be a semi-finished product existing in the middle of the process of producing the single-wafer vapor deposition masks 20A and 20B from the long metal plate 64.

  As shown in FIG. 11, the vapor deposition mask intermediate 100 includes a long metal plate 64, and a first effective region 22 </ b> A and a second effective region 22 </ b> B provided on the long metal plate 64. In the present embodiment, a plurality of first effective regions 22 </ b> A and a plurality of second effective regions 22 </ b> B are arranged on the long metal plate 64 along the longitudinal direction D <b> 1 of the long metal plate 64. Of these, the first effective area 22A constitutes the first vapor deposition mask 20A, and the second effective area 22B constitutes the second vapor deposition mask 20B. The second effective area 22B is arranged closer to the center in the width direction D2 of the long metal plate 64 than the first effective area 22A. In the form shown in FIG. 11, the first effective region 22A is formed on one side edge 64e side and the other side edge 64e side of the pair of side edges 64e that define the width of the long metal plate 64. The second effective area 22B is arranged at the center position of the long metal plate 64 in the width direction D2. That is, the second effective area 22B is arranged between two columns formed by the first effective area 22A. Note that the above-described through hole 25 is formed in the first effective region 22A and the second effective region 22B.

  The arrangement direction of the first effective region 22A and the second effective region 22B is along the longitudinal direction D1 of the long metal plate 64. When the first vapor deposition mask 20A and the second vapor deposition mask 20B are obtained from the vapor deposition mask intermediate 100, the long metal plate 64 is held in a stretched state and corresponds to the first effective region 22A and the second effective region 22B. Thus, the long metal plate 64 is cut. As a result, the first vapor deposition mask 20A and the second vapor deposition mask 20B are cut along the longitudinal direction D1 of the long metal plate 64 to be formed into an elongated rectangular shape. That is, the vapor deposition mask 20 (20A, 20B) according to the present embodiment is assigned to the long metal plate 64 so that the longitudinal direction thereof is along the longitudinal direction D1 of the long metal plate 64, and the long metal plate 64 is concerned. It can be obtained by being cut individually from.

  However, when viewed in detail, the planar shape of the first vapor deposition mask 20A obtained as described above is curved as a whole when not stretched, as shown in FIG. Here, FIG. 12 shows the first vapor deposition mask 20A and the second vapor deposition mask 20B obtained from the vapor deposition mask intermediate 100 shown in FIG.

  As shown in FIG. 12, the first vapor deposition mask 20A is convex toward the second vapor deposition mask 20B side (the central side in the width direction D2 of the long metal plate 64), and the second vapor deposition mask 20B side. The other side, that is, the side edge 64e side of the long metal plate 64 is formed to be recessed. This is considered to be caused by the above-described corrugated shape (ear extension) appearing at the side edge 64e in the width direction D2 of the long metal plate 64 obtained by rolling. That is, when the long metal plate 64 having a corrugated shape formed on the side edge 64e is exposed, the long metal plate 64 is in vacuum contact with exposure masks 68a and 68b (see FIG. 17) described later. At this time, the side edge 64e on which the wavy shape has been formed is extended so as not to have wrinkles and is in close contact with the exposure masks 68a and 68b. In such a close contact state, the long metal plate 64 is exposed to form the through holes 25 in the effective areas 22A and 22B. That is, the long metal plate 64 is exposed so that the through hole 25 having a normal dimension is obtained in a state where the long metal plate 64 is stretched so as not to have wrinkles. After the exposure, when the exposure masks 68a and 68b are removed from the long metal plate 64, a wavy shape appears again on the side edge 64e of the long metal plate 64, and the side edge 64e is contracted.

  The first side edge 20f of the first vapor deposition mask 20A corresponds to one side edge 64e side of the pair of side edges 64e of the long metal plate 64. The second side edge 20g corresponds to the side opposite to the side edge 64e, that is, the center side of the long metal plate 64 in the width direction D2. For this reason, the first side edge 20f has a larger corrugated shape than the second side edge 20g, and the first vapor deposition mask 20A is curved when the long metal plate 64 is viewed along its normal direction. It has such a planar shape. In this way, the first side edge 20f of the first vapor deposition mask 20A is formed to be recessed in plan view, and the second side edge 20g is formed to be convex in plan view.

  Therefore, in the present embodiment, the first vapor deposition mask 20A shown in FIGS. 11 and 12 is configured by the vapor deposition mask 20 described above shown in FIG. That is, in the longitudinal direction D1 of the long metal plate 64, dummy regions 80 are provided on both sides of the first effective region 22A constituting the first vapor deposition mask 20A. The dummy region 80 includes a first region side edge 81 (see FIGS. 8A and 8B) provided on the side opposite to the second vapor deposition mask 20B side, and a second region provided on the second vapor deposition mask 20B side. A two-region side edge 82. Among these, the 1st area | region side edge part 81 is arrange | positioned at the one side edge 64e side of the elongate metal plate 64. As shown in FIG. The second region side edge portion 82 is disposed on the side opposite to the side edge 64 e, that is, on the center side in the width direction D <b> 2 of the long metal plate 64.

  In FIGS. 11 and 12, an example in which two first vapor deposition masks 20A and one second vapor deposition mask 20B are obtained from the vapor deposition mask intermediate 100 is shown. However, the present invention is not limited to this, and the first vapor deposition mask 20A having the dummy region 80 from a portion (a portion on the side edge 64e side) of the long metal plate 64 that is relatively greatly affected by the corrugated shape. Is obtained, the number of the first vapor deposition mask 20A and the number of the second vapor deposition mask 20B obtained from the vapor deposition mask intermediate 100 are arbitrary. For example, when five vapor deposition masks are assigned in the width direction D2 of the long metal plate 64 in which the corrugated shape appears, the outermost two vapor deposition masks adjacent to the side edge 64e are the first vapor deposition mask 20A, and the centermost It is preferable that the one evaporation mask is the second evaporation mask 20B. In this case, with respect to the remaining two vapor deposition masks between the first vapor deposition mask 20A and the second vapor deposition mask 20B, the vapor deposition masks are used according to the degree of the corrugated shape in the portion to which the vapor deposition mask is assigned. It may be a vapor deposition mask 20A or a second vapor deposition mask 20B. Further, for example, when four deposition masks are assigned in the width direction D2 of the long metal plate 64 in which the wavy shape appears, the outermost two deposition masks adjacent to the side edge 64e are defined as the first deposition mask 20A. The two deposition masks on the center side are preferably the second deposition mask 20B.

  Next, the present embodiment having such a configuration and the operation and effect thereof will be described. Here, the manufacturing method of the metal plate used in order to manufacture a vapor deposition mask is demonstrated first. Next, a method for manufacturing a vapor deposition mask using the obtained metal plate will be described. Then, the method to vapor-deposit vapor deposition material on a board | substrate using the obtained vapor deposition mask is demonstrated.

(Metal plate manufacturing method)
First, a method for manufacturing a metal plate will be described with reference to FIGS. FIG. 13 is a diagram showing a step of rolling a base material to obtain a metal plate having a desired thickness, and FIG. 14 is a diagram showing a step of annealing the metal plate obtained by rolling.

[Rolling process]
First, as shown in FIG. 13, a base material 55 made of an iron alloy containing nickel is prepared, and this base material 55 is indicated by an arrow D1 toward a rolling device 56 including a pair of rolling rolls 56a and 56b. Transport along the transport direction. The base material 55 that has reached between the pair of rolling rolls 56a and 56b is rolled by the pair of rolling rolls 56a and 56b. As a result, the base material 55 is reduced in thickness and stretched along the conveying direction. It is. This makes it possible to obtain a plate 64X thickness _{t 0.} As shown in FIG. 13, the wound body 62 may be formed by winding the plate material 64 </ b> X around the core 61. The specific value of the thickness t ₀ is preferably in the range of 5 to 85 μm as described above.

  In addition, FIG. 13 is only what shows the outline of a rolling process, and the specific structure and procedure for implementing a rolling process are not specifically limited. For example, the rolling process includes a hot rolling process in which the base material is processed at a temperature equal to or higher than a temperature at which the crystal arrangement of the invar material constituting the base material 55 is changed, and a base material at a temperature lower than the temperature at which the crystal arrangement of the invar material is changed. It may include a cold rolling process for processing. Moreover, the direction at the time of passing the base material 55 and the board | plate material 64X between a pair of rolling rolls 56a and 56b is not restricted to one direction. For example, in FIGS. 13 and 14, the base material 55 and the plate material 64X are repeatedly passed between the pair of rolling rolls 56a and 56b in the direction from the left side to the right side of the drawing and from the right side to the left side of the drawing. The material 55 and the plate material 64X may be gradually rolled.

[Slit process]
Then, you may implement the slit process which cuts off the both ends in the width direction of the board | plate material 64X obtained by the rolling process over the range of 3 mm or more and 5 mm or less, respectively. This slit process is performed in order to remove cracks that may occur at both ends of the plate 64X due to rolling. By performing such a slit process, it is possible to prevent a phenomenon that the plate material 64X is broken, that is, so-called plate breakage, from being caused by a crack.

[Annealing process]
Thereafter, in order to remove the residual stress accumulated in the plate material 64X by rolling, as shown in FIG. 14, the plate material 64X is annealed using an annealing device 57, thereby obtaining the long metal plate 64. As shown in FIG. 14, the annealing step may be performed while pulling the plate material 64X or the long metal plate 64 in the transport direction (longitudinal direction D1). That is, the annealing step may be performed as continuous annealing while being conveyed, not so-called batch-type annealing. The period during which the annealing step is performed is appropriately set according to the thickness of the long metal plate 64, the rolling rate, and the like. For example, the annealing step is performed at 200 ° C. to 600 ° C. for 30 seconds to 30 minutes. The “60 seconds” means that the time required for the plate material 64X to pass through the space heated to 500 ° C. in the annealing device 57 is 60 seconds.

  Preferably, the above-described annealing step is performed in a non-reducing atmosphere or an inert gas atmosphere. Here, the non-reducing atmosphere is an atmosphere that does not contain a reducing gas such as hydrogen. “Does not contain reducing gas” means that the concentration of reducing gas such as hydrogen is 10% or less. The inert gas atmosphere is an atmosphere in which 90% or more of inert gas such as argon gas, helium gas, and nitrogen gas exists. By performing the annealing step in a non-reducing atmosphere or an inert gas atmosphere, the above-described nickel hydroxide can be prevented from being generated on the first surface 64 a and the second surface 64 b of the long metal plate 64. .

By performing the annealing step, it is possible to obtain a long metal plate 64 having a thickness t ₀ from which residual strain has been removed to some extent. The thickness t ₀ is usually equal to the thickness t of the vapor deposition mask 20.

Incidentally, the rolling step described above, by repeating several times the slit step and the annealing step may be manufactured of metal plate 64 elongated in the thickness t _0. FIG. 14 shows an example in which the annealing process is performed while pulling the long metal plate 64 in the longitudinal direction D1, but the present invention is not limited to this. You may implement in the state wound up by 61. FIG. That is, batch-type annealing may be performed. When the annealing process is performed in a state where the long metal plate 64 is wound around the core 61, the long metal plate 64 may be warped with warping according to the winding diameter of the wound body 62. . Therefore, depending on the winding diameter of the wound body 62 and the material constituting the base material 55, it is advantageous to perform the annealing step while pulling the long metal plate 64 in the longitudinal direction D1.

[Cutting process]
Thereafter, both ends of the long metal plate 64 in the width direction D2 are cut off over a predetermined range, thereby performing a cutting step of adjusting the width of the long metal plate 64 to a desired width. In this way, a long metal plate 64 having a desired thickness and width can be obtained.

(Method for manufacturing vapor deposition mask)
Next, a method for manufacturing the vapor deposition mask 20 using the long metal plate 64 selected as described above will be described mainly with reference to FIGS. In the manufacturing method of the vapor deposition mask 20 described below, as shown in FIG. 15, a long metal plate 64 is supplied, and through holes 25 and dummy holes 86 are formed in the long metal plate 64, and the vapor deposition mask intermediate body. 100 is obtained, and further, the vapor deposition mask 20 made of the sheet metal plate 21 is obtained by cutting the long metal plate 64.

  More specifically, the manufacturing method of the vapor deposition mask 20, the step of supplying a long metal plate 64 extending in a strip shape, and etching using a photolithography technique are performed on the long metal plate 64, and the long metal plate The first concave portion 30 and the first dummy hole concave portion 86a are formed on the long metal plate 64 from the side of the first surface 64a and the long metal plate 64 is etched by using a photolithography technique. Forming the second concave portion 35 and the second dummy hole concave portion 86b from the second surface 64b side. The first recess 30 and the second recess 35 formed in the long metal plate 64 communicate with each other, whereby the through hole 25 is formed in the long metal plate 64 and the first dummy hole recess 86a and The dummy holes 86 are formed in the long metal plate 64 by communicating with the second dummy hole recesses 86b. In the example shown in FIGS. 16 to 23, the formation process of the first recess 30 is performed before the formation process of the second recess 35, and the formation process of the first recess 30 and the formation of the second recess 35 are performed. A step of sealing the manufactured first recess 30 is further provided between the steps. Details of each step will be described below.

  FIG. 15 shows a manufacturing apparatus 60 for manufacturing the vapor deposition mask 20. As shown in FIG. 15, first, a wound body 62 in which a long metal plate 64 is wound around a core 61 is prepared. And when this core 61 rotates and the wound body 62 is unwound, as shown in FIG. 15, the elongate metal plate 64 extended in strip | belt shape is supplied. The long metal plate 64 is formed with the through-hole 25 to form the sheet metal plate 21 and the vapor deposition mask 20.

  The supplied long metal plate 64 is transported to the etching apparatus (etching means) 70 by the transport roller 72. Each process shown in FIGS. 16 to 23 is performed by the etching apparatus 70. In the present embodiment, as described above, a plurality of vapor deposition masks 20 are assigned in the width direction D2 of the long metal plate 64 (see FIGS. 11 and 12). That is, the plurality of vapor deposition masks 20 are produced from a region occupying a predetermined position of the long metal plate 64 in the longitudinal direction D1 of the long metal plate 64. In this case, preferably, the plurality of vapor deposition masks 20 are assigned to the long metal plate 64 so that the longitudinal direction of the vapor deposition mask 20 coincides with the rolling direction of the long metal plate 64 (longitudinal direction D1).

  First, as shown in FIG. 16, resist films 65 c and 65 d containing a negative photosensitive resist material are formed on the first surface 64 a and the second surface 64 b of the long metal plate 64. As a method of forming the resist films 65c and 65d, a film on which a layer containing a photosensitive resist material such as an acrylic photo-curable resin is formed, a so-called dry film is formed on the first surface 64a of the long metal plate 64 and on the first surface 64a. A method of pasting on the two surfaces 64b is employed.

  Next, exposure masks 68a and 68b are prepared so as not to transmit light to the regions to be removed of the resist films 65c and 65d. The exposure masks 68a and 68b are respectively formed on the resist films 65c and 65d as shown in FIG. To place. As the exposure masks 68a and 68b, for example, a glass dry plate that prevents light from being transmitted to regions to be removed of the resist films 65c and 65d is used. Thereafter, the exposure masks 68a and 68b are sufficiently adhered to the resist films 65c and 65d by vacuum adhesion. As the photosensitive resist material, a positive type may be used. In this case, an exposure mask in which light is transmitted through a region to be removed of the resist film is used as the exposure mask.

  Thereafter, the resist films 65c and 65d are exposed through the exposure masks 68a and 68b. Further, the resist films 65c and 65d are developed in order to form images on the exposed resist films 65c and 65d (development process). As described above, as shown in FIG. 18, the first resist pattern 65 a is formed on the first surface 64 a of the long metal plate 64, and the second resist pattern is formed on the second surface 64 b of the long metal plate 64. 65b can be formed. The developing process may include a resist heat treatment process for increasing the hardness of the resist films 65c and 65d, or for making the resist films 65c and 65d more firmly adhere to the long metal plate 64. The resist heat treatment step is performed, for example, in the range of 100 to 400 ° C. in an atmosphere of an inert gas such as argon gas, helium gas, or nitrogen gas.

  Next, as shown in FIG. 19, a first surface etching step of etching a region of the first surface 64 a of the long metal plate 64 that is not covered with the first resist pattern 65 a using a first etching solution. carry out. For example, the first etching solution is applied to the first surface 64a of the long metal plate 64 from the nozzle disposed on the side facing the first surface 64a of the long metal plate 64 to be conveyed through the first resist pattern 65a. It is injected towards. As a result, as shown in FIG. 19, erosion by the first etching solution proceeds in a region of the long metal plate 64 that is not covered with the first resist pattern 65a. As a result, a large number of first recesses 30 and a large number of first dummy hole recesses 86 a are formed on the first surface 64 a of the long metal plate 64. As the first etching solution, for example, a solution containing a ferric chloride solution and hydrochloric acid is used.

  After that, as shown in FIG. 20, the first recess 30 and the first dummy hole recess 86a are covered with a resin 69 having resistance to a second etching solution used in the subsequent second surface etching step. That is, the first recess 30 and the first dummy hole recess 86a are sealed with the resin 69 having resistance to the second etching solution. In the example shown in FIG. 20, a film of resin 69 is formed so as to cover not only the formed first recess 30 and first dummy hole recess 86a but also the first surface 64a (first resist pattern 65a). .

  Next, as shown in FIG. 21, a region of the second surface 64b of the long metal plate 64 that is not covered with the second resist pattern 65b is etched, and the second recess 35 and the second dummy are formed on the second surface 64b. A second surface etching step for forming the hole recess 86b is performed. The second surface etching process is performed until the first recess 30 and the second recess 35 communicate with each other, thereby forming the through hole 25. At this time, the first dummy hole recess 86a and the second dummy hole recess 86b communicate with each other to form the dummy hole 86. As the second etching solution, for example, a solution containing a ferric chloride solution and hydrochloric acid is used in the same manner as the first etching solution.

  Note that the erosion by the second etching solution is performed in a portion of the long metal plate 64 that is in contact with the second etching solution. Therefore, erosion does not proceed only in the normal direction N (thickness direction) of the long metal plate 64 but also proceeds in the direction along the plate surface of the long metal plate 64. Here, preferably, in the second surface etching step, two second recesses 35 respectively formed at positions facing two adjacent holes 66a of the second resist pattern 65b are positioned between the two holes 66a. It ends before joining at the back side of the bridge portion 67a. Thereby, as shown in FIG. 22, the above-described top portion 43 can be left on the second surface 64 b of the long metal plate 64.

  Thereafter, as shown in FIG. 23, the resin 69 is removed from the long metal plate 64. The resin 69 can be removed by using, for example, an alkaline stripping solution. When the alkaline stripping solution is used, as shown in FIG. 23, the resist patterns 65a and 65b are also removed simultaneously with the resin 69. In addition, after removing the resin 69, the resist patterns 65a and 65b may be removed separately from the resin 69 by using a remover different from the remover for removing the resin 69.

  In this way, the vapor deposition mask intermediate 100 in which a large number of through holes 25 and a large number of dummy holes 86 are formed in the long metal plate 64 is obtained.

  As shown in FIG. 15, the vapor deposition mask intermediate 100 is transported to a cutting device (cutting means) 73 by transport rollers 72 and 72 that rotate while the long metal plate 64 is sandwiched. The supply core 61 described above is rotated through tension (tensile stress) acting on the long metal plate 64 by the rotation of the transport rollers 72 and 72, and the long metal plate 64 is supplied from the wound body 62. It is like that.

  Thereafter, the long metal plate 64 in which a large number of through holes 25 and a large number of dummy holes 86 are formed is cut into a predetermined length and width by a cutting device (cutting means) 73, whereby the long metal plate 64 is formed. The sheet-like metal plate 21 in which a large number of through holes 25 and a large number of dummy holes 86 are formed is obtained.

  As described above, the vapor deposition mask 20 made of the metal plate 21 in which a large number of through holes 25 and a large number of dummy holes 86 are formed is obtained.

(Deposition process)
Next, a method for depositing the deposition material 98 on the substrate 92 using the obtained deposition mask 20 will be described. First, as shown in FIG. 2, the first surface 20 a of the vapor deposition mask 20 is brought into close contact with the surface of the substrate 92. At this time, the first surface 20 a of the vapor deposition mask 20 may be brought into close contact with the surface of the substrate 92 using a magnet or the like (not shown). As shown in FIG. 1, a plurality of vapor deposition masks 20 are stretched on the frame 15. More specifically, a tension in the longitudinal direction of the deposition mask 20 is applied to the deposition mask 20, and the ear portion 24 of the deposition mask 20 is attached to the frame 15 in a state in which this tension is applied. The ear 24 is fixed to the frame 15 by spot welding, for example. In this way, the surface of the vapor deposition mask 20 is parallel to the surface of the substrate 92. 1 shows an example in which all the vapor deposition masks 20 stretched on the frame 15 have the dummy regions 80, but the present invention is not limited to this, and the vapor deposition mask having the dummy regions 80 is not limited thereto. 20 (first vapor deposition mask 20A) and a vapor deposition mask (second vapor deposition mask 20B) that does not have the dummy region 80 may be mixed.

  In the state where the vapor deposition mask 20 is stretched, the dummy region 80 of the vapor deposition mask 20 extends, but the elongation differs in the width direction of the vapor deposition mask 20. In response to this, the extension of the effective region 22 varies in the width direction.

  Here, a description will be given of a case where the vapor deposition mask 20 having a planar shape that is curved as shown in FIG. 12 and does not have the above-described dummy region 80 is stretched. When a longitudinal tension is applied to such a vapor deposition mask 20, a portion of the effective region 22 on the side of the first side edge 20f of the vapor deposition mask 20 formed so as to be recessed in plan view is contracted and loosened. Therefore, it is difficult to apply tension to the portion and it is difficult to stretch. Thus, the elongation of the portion on the first side edge 20f side can be smaller than the elongation of the portion on the second side edge 20g side. For this reason, in the part by the side of the 1st side edge 20f in the effective area | region 22, it cannot extend until the through-hole 25 is located in a regular position, and the position of the through-hole 25 at the time of vapor deposition may shift | deviate. . Even if the portion on the first side edge 20f side and the portion on the second side edge 20g side extend substantially evenly, the portion on the first side edge 20f side is slack before the tension is applied. Therefore, even if the portion on the first side edge 20f side is extended to some extent, it is still in a relaxed state, and it is considered difficult to extend until the through hole 25 is positioned at the normal position. For this reason, the position of the through hole 25 may be shifted.

  Further, at the time of stretching, the elongation of the central portion in the width direction of the vapor deposition mask 20 in the effective area 22 is larger than the elongation of the portion on the first side edge 20f side, but the portion on the second side edge 20g side. Can be smaller than elongation. For this reason, even in the central portion in the width direction, the through hole 25 cannot be extended until it is positioned at the normal position, and the position of the through hole 25 during vapor deposition may be shifted.

  On the other hand, according to the present embodiment, the material remaining amount at the first region side edge 81 of the dummy region 80 is larger than the material remaining amount at the second region side edge 82. In this case, the aperture ratio of the plurality of dummy holes 86 provided in the first region side edge portion 81 can be made smaller than the aperture ratio of the plurality of dummy holes 86 provided in the second region side edge portion 82. . Thereby, the elongation rate of the first region side edge portion 81 of the dummy region 80 during stretching can be made smaller than the elongation rate of the second region side edge portion 82.

  In this case, the tension applied to the portion on the first side edge 20f side of the effective region 22 can be made larger than the tension applied to the portion on the second side edge 20g side. Accordingly, the extension of the portion of the effective region 22 on the first side edge 20f side can be made larger than the extension of the portion on the second side edge 20g side. For this reason, it is possible to effectively increase the elongation of the portion of the effective region 22 on the first side edge 20f side during stretching. On the other hand, the extension of the portion of the effective region 22 on the second side edge 20g side can be effectively reduced during stretching. As a result, the position of the through hole 25 formed in the effective region 22 can be positioned (or moved closer) to the normal position, and the position of the through hole 25 can be prevented from shifting.

  In addition, according to the present embodiment, the material remaining amount in the region central portion 83 provided between the first region side edge 81 and the second region side edge 82 of the dummy region 80 is the first region side edge. It is smaller than the material remaining amount in the portion 81 and larger than the material remaining amount in the second region side edge portion 82. In this case, the aperture ratio of the plurality of dummy holes 86 provided in the region central portion 83 can be made larger than the aperture ratio of the plurality of dummy holes 86 provided in the first region side edge portion 81, and The opening ratio of the plurality of dummy holes 86 provided in the two-region side edge 82 can be made smaller. Accordingly, the elongation rate of the region central portion 83 of the dummy region 80 at the time of stretching can be made larger than the elongation rate of the first region side edge portion 81, and the elongation rate of the second region side edge portion 82 can be increased. Can be made smaller.

  In this case, the tension applied to the central portion of the effective region 22 in the width direction of the vapor deposition mask 20 can be made larger than the tension applied to the portion on the second side edge 20g side, and the first side edge 20f side. It can be made smaller than the tension applied to the portion. As a result, the elongation of the central portion of the effective region 22 can be made larger than the elongation of the portion on the second side edge 20g side, and smaller than the elongation of the portion on the first side edge 20f side. can do. For this reason, the extension of the effective region 22 can be increased stepwise from the second side edge 20g toward the first side edge 20f. As a result, the position of the through-hole 25 formed in the central portion of the effective region 22 can be positioned (or brought close) at the time of stretching, and the position of the through-hole 25 can be prevented from shifting.

  After the vapor deposition mask 20 is stretched, the vapor deposition material 98 in the crucible 94 is heated to vaporize or sublimate the vapor deposition material 98. The vaporized or sublimated vapor deposition material 98 adheres to the substrate 92 through the through hole 25 of the vapor deposition mask 20. As a result, the vapor deposition material 98 is formed on the surface of the substrate 92 in a desired pattern corresponding to the position of the through hole 25 of the vapor deposition mask 20.

  Thus, according to the present embodiment, the material remaining amount in the first region side edge 81 of the dummy region 80 provided between the ear portion 24 and the effective region 22 of the vapor deposition mask 20 is the second region side. The amount of remaining material at the edge 82 is larger. As a result, in the effective region 22, it is possible to effectively increase the elongation of the portion on the first side edge 20 f (see FIG. 12) side of the vapor deposition mask 20 formed so as to be recessed in plan view. For this reason, it can prevent that the position of the through-hole 25 formed in the effective area | region 22 slip | deviates, and can improve the positional accuracy of the through-hole 25 at the time of tensioning.

  In addition, according to the present embodiment, the material remaining amount in the region central portion 83 provided between the first region side edge 81 and the second region side edge 82 of the dummy region 80 is the first region side edge. It is smaller than the material remaining amount in the portion 81 and larger than the material remaining amount in the second region side edge portion 82. As a result, in the effective area 22, the elongation of the central portion in the width direction of the vapor deposition mask 20 can be made larger than the elongation of the portion on the second side edge 20g side, and the first side edge 20f side. It can be made smaller than the elongation of the part. For this reason, the position of the through hole 25 formed in the effective region 22 can be further prevented from shifting, and the position accuracy of the through hole 25 at the time of stretching can be further improved.

  As mentioned above, although embodiment of this invention was described in detail, the vapor deposition mask and vapor deposition mask intermediate body by this invention are not limited to the said embodiment at all, and in the range which does not deviate from the meaning of this invention. Various changes are possible.

(Metal plate modification)
In the above-described embodiment, an example has been shown in which a plate material having a desired thickness is obtained by rolling a base material to produce a metal plate and then annealing the metal plate. However, the present invention is not limited to this, and a metal plate having a desired thickness may be manufactured by a foil-making process using a plating process. In the foil-making process, for example, by rotating a drum made of stainless steel partially immersed in the plating solution, a plating film is formed on the surface of the drum, and this plating film is peeled off, A scale-like metal plate can be produced by roll-to-roll. When a metal plate made of an iron alloy containing nickel is produced, a mixed solution of a solution containing a nickel compound and a solution containing an iron compound can be used as the plating solution. For example, a mixed solution of a solution containing nickel sulfamate and a solution containing iron sulfamate can be used. The plating solution may contain additives such as malonic acid and saccharin.

  Next, the above-described annealing step may be performed on the metal plate thus obtained. Moreover, you may implement the above-mentioned cutting process which cuts off the both ends of a metal plate in order to adjust the width | variety of a metal plate to a desired width after an annealing process.

  Even in the case where a metal plate is produced using plating, the process of forming resist patterns 65a and 65b, the first surface and the second surface of the metal plate are thereafter performed as in the case of the above-described embodiment. By performing the etching process, the vapor deposition mask 20 in which the plurality of through holes 25 are formed can be obtained.

(Modified example of arrangement of through holes)
In this Embodiment mentioned above, when the vapor deposition mask 20 was seen along the normal line direction N of the vapor deposition mask 20, the several through-hole 25 was shown in the grid | lattice form. However, the arrangement of the through holes 25 is not particularly limited. For example, as shown in FIG. 24, when the vapor deposition mask 20 is viewed along the normal direction N of the vapor deposition mask 20, a plurality of through holes 25 may be arranged in a staggered pattern.

(Modification of dummy hole arrangement)
In the present embodiment described above, as shown in FIGS. 8A and 8B, when the deposition mask 20 is viewed along the normal direction N of the deposition mask 20, the first surface dummy opening 84 and the second surface dummy An example in which the openings 85 are arranged in a lattice shape is shown. However, the arrangement of the first surface dummy openings 84 and the second surface dummy openings 85 is not particularly limited. For example, as shown in FIG. 25, the first surface dummy openings 84 and the second surface dummy openings 85 are arranged in a staggered pattern similar to the through hole 25 shown in FIG. It may be. Even in this case, the tension applied to the effective region 22 at the time of stretching can be adjusted according to the position in the width direction of the vapor deposition mask 20. FIG. 25 shows an arrangement example of the first surface dummy openings 84 in an arbitrary part of the dummy region 80.

(Modification of dummy area)
In the present embodiment described above, an example in which the dummy hole 86 defined by the first surface dummy opening 84 and the second surface dummy opening 85 is provided in the dummy region 80 has been described. However, such a dummy hole 86 may not be provided. For example, as shown in FIG. 26, in the dummy region 80, the first surface 20a of the vapor deposition mask 20 is provided with a first dummy recess 87 defined by the first surface dummy opening 84, and the second surface 20b. A second dummy recess 88 defined by the second surface dummy opening 85 may be provided. Even in this case, the tension applied to the effective region 22 at the time of stretching can be adjusted according to the position in the width direction of the vapor deposition mask 20.

  Moreover, as shown in FIGS. 26 and 27, when viewed along the normal direction N of the vapor deposition mask 20, the center of the first surface dummy opening 84 and the center of the second surface dummy opening 85 are , They may be arranged alternately instead of overlapping. In this case, even if the dummy hole 86 penetrating the dummy area 80 is not provided, the rigidity of the dummy area 80 can be effectively reduced. That is, the cross-sectional area along the normal direction N and the width direction of the vapor deposition mask 20 in the dummy region 80 can be reduced, and the rigidity of the dummy region 80 can be effectively reduced. In addition, in the form shown in FIG. 26, the cross-sectional shape along the normal direction N and the longitudinal direction of the vapor deposition mask 20 in the dummy region 80 can be formed roughly in a bellows shape. It is possible to contribute to effective reduction of the rigidity. FIG. 27 shows an arrangement example of the first surface dummy opening 84 and the second surface dummy opening 85 in an arbitrary portion of the dummy region 80.

  Such a first dummy recess 87 can be formed by etching from the first surface 21a side, and the second dummy recess 88 can be formed by etching from the second surface 21b side. That is, the first dummy recess 87 can be formed by etching in the same manner as the first recess 30 described above. In this case, by setting the hole for the first dummy recess 87 formed in the first resist pattern 65a to the same size as the hole for the first recess 30, the depth of the first dummy recess 87 is reduced to the first recess. However, the present invention is not limited to this as long as the first dummy recess 87 and the second dummy recess 88 do not communicate with each other. On the other hand, by making the hole for the second dummy recess 88 formed in the second resist pattern 65b smaller than the hole 66a for the second recess 35, the depth is shallower than the second recess 35 as shown in FIG. A second dummy recess 88 can be formed. In this case, the second dummy recess 88 can be prevented from communicating with the first dummy recess 87 and the first surface 20a. In FIG. 26, an example is shown in which the first dummy recess 87 and the second dummy recess 88 have a semicircular cross section. However, the present invention is not limited to this. Moreover, although the planar shape of the 1st surface dummy opening part 84 which demarcates the 1st dummy recessed part 87 and the 2nd surface dummy opening part 85 which demarcates the 2nd dummy recessed part 88 has shown the example which is a rectangular shape, The shape is not limited, and any shape such as a slit shape or a circular shape can be used.

  Note that the terms “first dummy recess 87” and “second dummy recess 88” described above are used to mean a recess having a depth that can contribute to a reduction in rigidity of the dummy region 80. That is, the first dummy recess 87 and the second dummy recess 88 are intentionally formed in the long metal plate 64 by etching or the like, and are used when the long metal plate 64 is manufactured or when the vapor deposition mask is manufactured. It is a recess that does not include a recess or the like that has an undesirably formed depth.

  26 shows an example in which the first dummy recess 87 is provided on the first surface 20a and the second dummy recess 88 is provided on the second surface 20b. It will never be done. For example, only one of the first dummy recess 87 and the second dummy recess 88 may be provided in the dummy region 80. Even in this case, the tension applied to the effective region 22 at the time of stretching can be adjusted according to the position in the width direction of the vapor deposition mask 20.

(Modification of dummy area)
In the above-described embodiment, the dummy region 80 is interposed between each of the ear portions 24 and the effective region 22 and is provided on both sides of the effective region 22 in the longitudinal direction of the vapor deposition mask 20. explained. However, the present invention is not limited to this, and the dummy region 80 is interposed between at least one ear portion 24 of the pair of ear portions 24 and the effective region 22, and the other ear portion 24 and the effective region 22. The dummy region 80 may not be interposed between the two. In other words, it is provided on one side of the effective area 22 in the longitudinal direction of the vapor deposition mask 20 and may not be provided on the other side. For example, in FIG. 1, the dummy area 80 on the upper side or the lower side of the three effective areas 22 (upper or lower side when the vertical direction is specified by the reference numerals shown in FIG. 1) may not be provided. Also in this case, the extension of the portion on the first side edge 20f (see FIG. 12) side of the vapor deposition mask 20 formed so as to be recessed in the plan view in the effective region 22 by one dummy region 80 described above. Can be effectively increased. For this reason, it can prevent that the position of the through-hole 25 formed in the effective area | region 22 slip | deviates, and can improve the positional accuracy of the through-hole 25 at the time of tensioning.

(First Variation of Manufacturing Method of Evaporation Mask)
In the above-described embodiment, an example in which the vapor deposition mask 20 is manufactured by an etching process has been described. However, the vapor deposition mask 20 may be manufactured by a plating process. The vapor deposition mask 20 in this case will be described in detail below.

  As shown in FIG.28 and FIG.29, the vapor deposition mask 20 is provided with the 1st metal layer 32 which comprises the 1st surface 20a, and the 2nd metal layer 37 which comprises the 2nd surface 20b. The first metal layer 32 is provided with a first opening 30 in a predetermined pattern, and the second metal layer 37 is provided with a second opening 35 in a predetermined pattern. In the effective region 22, the first opening 30 and the second opening 35 communicate with each other, thereby forming a through hole 25 from the first surface 20 a to the second surface 20 b of the vapor deposition mask 20. In addition, in FIG. 29, in addition to the cross section seen from the XX direction of FIG. 28, the dummy hole 86 of the dummy area | region 80 is also shown.

  As shown in FIG. 28, the first opening 30 and the second opening 35 constituting the through hole 25 may have a substantially polygonal shape in plan view. Here, an example is shown in which the first opening 30 and the second opening 35 have a substantially square shape, more specifically, a substantially square shape. Although not shown, the first opening 30 and the second opening 35 may have other substantially polygonal shapes such as a substantially hexagonal shape and a substantially octagonal shape. The “substantially polygonal shape” is a concept including a shape in which corners of a polygon are rounded. Although not shown, the first opening 30 and the second opening 35 may be circular. Moreover, as long as the 2nd opening part 35 has the outline which surrounds the 1st opening part 30 in planar view, the shape of the 1st opening part 30 and the shape of the 2nd opening part 35 do not need to be similar.

  In FIG. 29, the code | symbol 41 represents the connection part to which the 1st metal layer 32 and the 2nd metal layer 37 are connected. Reference sign S <b> 0 represents the dimension of the through hole 25 in the connection portion 41 between the first metal layer 32 and the second metal layer 37. In FIG. 29, an example in which the first metal layer 32 and the second metal layer 37 are in contact with each other is shown. Other layers may be interposed between the two layers. For example, a catalyst layer for promoting precipitation of the second metal layer 37 on the first metal layer 32 may be provided between the first metal layer 32 and the second metal layer 37.

  FIG. 30 is an enlarged view showing a part of the first metal layer 32 and the second metal layer 37 of FIG. As shown in FIG. 30, the width M2 of the second metal layer 37 on the second surface 20b of the vapor deposition mask 20 is smaller than the width M1 of the first metal layer 32 on the first surface 20a of the vapor deposition mask 20. In other words, the opening dimension S2 of the through hole 25 (second opening 35) in the second surface 20b is larger than the opening dimension S1 of the through hole 25 (first opening 30) in the first surface 20a. Hereinafter, advantages of configuring the first metal layer 32 and the second metal layer 37 in this way will be described.

  The vapor deposition material 98 flying from the second surface 20 b side of the vapor deposition mask 20 adheres to the organic EL substrate 92 through the second opening 35 and the first opening 30 of the through hole 25 in order. A region of the organic EL substrate 92 to which the vapor deposition material 98 adheres is mainly determined by the opening size S1 and the opening shape of the through hole 25 in the first surface 20a. By the way, as shown by an arrow L1 from the second surface 20b side to the first surface 20a in FIG. 29, the vapor deposition material 98 extends from the crucible 94 toward the organic EL substrate 92 along the normal direction N of the vapor deposition mask 20. In addition to movement, the vapor deposition mask 20 may move in a direction greatly inclined with respect to the normal direction N of the vapor deposition mask 20. Here, assuming that the opening dimension S2 of the through hole 25 in the second surface 20b is the same as the opening dimension S1 of the through hole 25 in the first surface 20a, it is greatly inclined with respect to the normal direction N of the vapor deposition mask 20. Most of the vapor deposition material 98 moving in the direction reaches the wall surface 36 of the second opening 35 of the through hole 25 and adheres before reaching the organic EL substrate 92 through the through hole 25. Therefore, in order to increase the utilization efficiency of the vapor deposition material 98, it can be said that it is preferable to increase the opening dimension S2 of the second opening 35, that is, to reduce the width M2 of the second metal layer 37.

  In FIG. 29, the minimum angle that the straight line L1 in contact with the wall surface 36 of the second metal layer 37 and the wall surface 31 of the second metal layer 37 (through the end portion 38) makes with respect to the normal direction N of the vapor deposition mask 20 is It is represented by the symbol θ1. In order to make the vapor deposition material 98 moving obliquely reach the organic EL substrate 92 as much as possible, it is advantageous to increase the angle θ1. For example, the angle θ1 is preferably set to 45 ° or more.

  In order to increase the angle θ1, it is effective to make the width M2 of the second metal layer 37 smaller than the width M1 of the first metal layer 32. As is clear from the figure, it is also effective to reduce the thickness T1 of the first metal layer 32 and the thickness T2 of the second metal layer 37 in increasing the angle θ1. Note that if the width M2 of the second metal layer 37, the thickness T1 of the first metal layer 32, and the thickness T2 of the second metal layer 37 are excessively reduced, the strength of the vapor deposition mask 20 is lowered, and therefore, during transportation. It is conceivable that the vapor deposition mask 20 is damaged during use. For example, it is conceivable that the vapor deposition mask 20 is damaged due to the tensile stress applied to the vapor deposition mask 20 when the vapor deposition mask 20 is stretched on the frame 15. Considering these points, it can be said that the dimensions of the first metal layer 32 and the second metal layer 37 are preferably set in the following ranges. Thereby, the above-mentioned angle θ1 can be set to 45 ° or more, for example.

The width M1 of the first metal layer 32 is 5 μm or more and 25 μm or less. The width M2 of the second metal layer 37 is 2 μm or more and 20 μm or less. The thickness T0 of the vapor deposition mask 20 is 5 μm or more and 50 μm or less, more preferably 3 μm or more. 50 μm or less, more preferably 3 μm or more and 30 μm or less, more preferably 3 μm or more and 25 μm or less ・ The thickness T1 of the first metal layer 32: 5 μm or less ・ The thickness T2 of the second metal layer 37: 2 μm or more and 50 μm or less, more preferably Is 3 μm or more and 50 μm or less, more preferably 3 μm or more and 30 μm or less, and further preferably 3 μm or more and 25 μm or less. In this embodiment, the thickness T0 of the vapor deposition mask 20 is set to Is the same.

  The above-described opening dimensions S0, S1, and S2 are appropriately set in consideration of the pixel density of the organic EL display device and the desired value of the above-described angle θ1. For example, when an organic EL display device having a pixel density of 400 ppi or more is manufactured, the opening dimension S0 of the through hole 25 in the connection portion 41 can be set to 15 μm or more and 60 μm or less. Further, the opening dimension S1 of the first opening 30 on the first surface 20a is set to 10 μm or more and 50 μm or less, and the opening dimension S2 of the second opening 35 on the second surface 20b is set to 15 μm or more and 60 μm or less. Can be done.

  As shown in FIG. 30, a recess 34 may be formed on the first surface 20 a of the vapor deposition mask 20 constituted by the first metal layer 32. The depression 34 is formed corresponding to a conductive pattern 152 of the pattern substrate 150 described later when the vapor deposition mask 20 is manufactured by plating. The depth D of the recess 34 is, for example, not less than 50 nm and not more than 500 nm. Preferably, the outer edge 34 e of the recess 34 formed in the first metal layer 32 is located between the end 33 of the first metal layer 32 and the connection portion 41.

  Also in the vapor deposition mask 20 described above, the dummy region 80 is provided similarly to the vapor deposition mask 20 created by the etching process, and a plurality of first surface dummy openings 84 are provided in the first surface 20a of the vapor deposition mask 20. In addition, a plurality of second surface dummy openings 85 are provided in the second surface 20b. Here, a dummy hole 86 defined by the first surface dummy opening 84 and the second surface dummy opening 85 is provided in the dummy region 80, and the dummy hole 86 passes through the dummy region 80. And the dummy hole 86 can be formed similarly to the through-hole 25. For example, the cross-sectional shape of the dummy hole 86 can be the same shape as the through-hole 25 formed in the effective region 22, It is not limited to this.

In the vapor deposition mask 20 produced by the plating process, the material remaining amount specifically means the amount of the material constituting the first metal layer 32 and the second metal layer 37 formed by the plating process. . The material remaining amount in such a vapor deposition mask 20 can be obtained in the same manner as the material remaining amount in the vapor deposition mask 20 produced by the etching process described above. The thickness _tu is a distance between the first surface 20a and the second surface 20b of the vapor deposition mask 20 at the center position Ou of the reference region U or a position in the vicinity of the center position Ou (see FIG. 10). Good.

  Next, a method for manufacturing the vapor deposition mask 20 by plating will be described.

(Method for manufacturing vapor deposition mask)
31 to 34 are views for explaining a method of manufacturing the vapor deposition mask 20.

[Pattern substrate preparation process]
First, a pattern substrate 150 shown in FIG. 31 is prepared. The pattern substrate 150 includes a base material 151 having insulating properties and a conductive pattern 152 formed on the base material 151. The conductive pattern 152 has a pattern corresponding to the first metal layer 32.

  As long as it has insulation and appropriate strength, the material constituting the substrate 151 and the thickness of the substrate 151 are not particularly limited. For example, glass, synthetic resin, or the like can be used as a material constituting the base material 151.

  As a material constituting the conductive pattern 152, a conductive material such as a metal material or an oxide conductive material is appropriately used. Examples of the metal material include chrome and copper. The thickness of the conductive pattern 152 is, for example, 50 nm or more and 500 nm or less.

  In addition, in order to facilitate the later-described separation process for separating the vapor deposition mask 20 from the pattern substrate 150, the pattern substrate 150 may be subjected to a mold release process.

  For example, first, a degreasing process for removing oil on the surface of the pattern substrate 150 is performed. For example, oil on the surface of the conductive pattern 152 of the pattern substrate 150 is removed using an acidic degreasing solution.

  Next, an activation process for activating the surface of the conductive pattern 152 is performed. For example, the same acidic solution as the acidic solution contained in the first plating solution used in the first plating process described later is brought into contact with the surface of the conductive pattern 152. For example, when the first plating solution contains nickel sulfamate, the sulfamic acid is brought into contact with the surface of the conductive pattern 152.

  Next, an organic film forming process for forming an organic film on the surface of the conductive pattern 152 is performed. For example, a release agent containing an organic substance is brought into contact with the surface of the conductive pattern 152. At this time, the thickness of the organic film is set so thin that the electrical resistance of the organic film does not hinder the deposition of the first metal layer 32 by electrolytic plating. The mold release agent may contain a sulfur component.

  In addition, after the degreasing process, the activation process, and the organic film forming process, a water washing process for washing the pattern substrate 150 with water is performed.

[First plating process]
Next, a first plating process is performed in which the first plating solution is supplied onto the base material 151 on which the conductive pattern 152 is formed to deposit the first metal layer 32 on the conductive pattern 152. For example, the base material 151 on which the conductive pattern 152 is formed is immersed in a plating tank filled with the first plating solution. Thus, as shown in FIG. 32, the first metal layer 32 provided with the first opening 30 and the first surface dummy opening 84 in a predetermined pattern on the pattern substrate 150 can be obtained.

  Note that, as shown in FIG. 32, the first metal layer 32 is not only a portion overlapping the conductive pattern 152 when viewed along the normal direction of the substrate 151, but also a conductive pattern, as shown in FIG. It can also be formed in a portion that does not overlap with 152. This is because the first metal layer 32 is further deposited on the surface of the first metal layer 32 deposited on the portion overlapping the end 154 of the conductive pattern 152. As a result, as shown in FIG. 32, the end portion 33 of the first opening 30 may be located at a portion that does not overlap the conductive pattern 152 when viewed along the normal direction of the base material 151. (The same applies to the end of the first surface dummy opening 84). Further, the above-described depression 34 corresponding to the thickness of the conductive pattern 152 is formed on the surface of the first metal layer 32 on the side in contact with the conductive pattern 152.

  In FIG. 32, the width of the portion of the first metal layer 32 that does not overlap with the conductive pattern 152 (that is, the portion where the depression 34 is not formed) is represented by the symbol w. The width w is, for example, not less than 0.5 μm and not more than 5.0 μm. The dimension of the conductive pattern 152 is set in consideration of the width w.

  As long as the first metal layer 32 can be deposited on the conductive pattern 152, the specific method of the first plating process is not particularly limited. For example, the first plating process may be performed as a so-called electrolytic plating process in which the first metal layer 32 is deposited on the conductive pattern 152 by passing a current through the conductive pattern 152. Alternatively, the first plating process may be an electroless plating process. When the first plating process is an electroless plating process, an appropriate catalyst layer may be provided on the conductive pattern 152. Alternatively, the conductive pattern 152 may be configured to function as a catalyst layer. Even when the electrolytic plating treatment step is performed, a catalyst layer may be provided on the conductive pattern 152.

  The components of the first plating solution used are appropriately determined according to the characteristics required for the first metal layer 32. For example, when the first metal layer 32 is made of an iron alloy containing nickel, a mixed solution of a solution containing a nickel compound and a solution containing an iron compound can be used as the first plating solution. For example, a mixed solution of a solution containing nickel sulfamate or nickel bromide and a solution containing ferrous sulfamate can be used. Various additives may be contained in the plating solution. As additives, pH buffers such as boric acid, primary brighteners such as saccharin sodium, secondary brighteners such as butynediol, propargyl alcohol, coumarin, formalin, and thiourea, and antioxidants can be used. . The primary brightener may contain a sulfur component.

[Resist formation process]
Next, a resist forming step is performed in which a resist pattern 155 is formed on the base material 151 and the first metal layer 32 with a predetermined gap 156 therebetween. FIG. 33 is a cross-sectional view showing a resist pattern 155 formed on the substrate 151. As shown in FIG. 33, in the resist forming step, the first opening 30 and the first surface dummy opening 84 of the first metal layer 32 are covered with the resist pattern 155, and the gap 156 of the resist pattern 155 is formed with the first metal. It is carried out so as to be located on the layer 32.

  Hereinafter, an example of the resist forming process will be described. First, a negative resist film is formed by attaching a dry film on the substrate 151 and the first metal layer 32. The dry film is a film that is attached to an object in order to form a resist film on the object such as the substrate 151. The dry film includes at least a base film made of PET or the like and a photosensitive layer laminated on the base film and having photosensitivity. The photosensitive layer includes a photosensitive material such as an acrylic photocurable resin, an epoxy resin, a polyimide resin, or a styrene resin. Note that a resist film may be formed by applying a material for the resist pattern 155 on the substrate 151 and then performing baking as necessary.

  Next, an exposure mask that prevents light from being transmitted to a region to be the gap 156 in the resist film is prepared, and the exposure mask is disposed on the resist film. Thereafter, the exposure mask is sufficiently adhered to the resist film by vacuum adhesion. Thereafter, the resist film is exposed through an exposure mask. Further, the resist film is developed to form an image on the exposed resist film. As described above, as shown in FIG. 33, the gap 156 located on the first metal layer 32 is provided and the resist covering the first opening 30 and the first surface dummy opening 84 of the first metal layer 32. A pattern 155 can be formed. In addition, in order to make the resist pattern 155 adhere more firmly to the base material 151 and the first metal layer 32, a heat treatment step of heating the resist pattern 155 may be performed after the development step.

  Note that a positive type resist film may be used. In this case, an exposure mask in which light is transmitted through a region to be removed of the resist film is used as the exposure mask.

[Second plating process]
Next, a second plating process is performed in which the second plating solution is supplied to the gap 156 of the resist pattern 155 to deposit the second metal layer 37 on the first metal layer 32. For example, the base material 151 on which the first metal layer 32 is formed is immersed in a plating tank filled with the second plating solution. As a result, as shown in FIG. 34, the second metal layer 37 can be formed on the first metal layer 32.

  As long as the second metal layer 37 can be deposited on the first metal layer 32, the specific method of the second plating process is not particularly limited. For example, the second plating process may be performed as a so-called electrolytic plating process in which the second metal layer 37 is deposited on the first metal layer 32 by passing a current through the first metal layer 32. Alternatively, the second plating process may be an electroless plating process. If the second plating process is an electroless plating process, an appropriate catalyst layer may be provided on the first metal layer 32. Even when the electrolytic plating treatment step is performed, a catalyst layer may be provided on the first metal layer 32.

  As the second plating solution, the same plating solution as the first plating solution described above may be used. Alternatively, a plating solution different from the first plating solution may be used as the second plating solution. When the composition of the first plating solution and the composition of the second plating solution are the same, the composition of the metal constituting the first metal layer 32 and the composition of the metal constituting the second metal layer 37 are also the same.

  In FIG. 34, the example in which the second plating process is continued until the upper surface of the resist pattern 155 coincides with the upper surface of the second metal layer 37 is shown, but the present invention is not limited to this. . The second plating process may be stopped with the upper surface of the second metal layer 37 positioned below the upper surface of the resist pattern 155.

[Removal process]
Thereafter, a removing process for removing the resist pattern 155 is performed. For example, the resist pattern 155 can be peeled from the substrate 151, the first metal layer 32, and the second metal layer 37 by using an alkaline stripping solution.

[Separation process]
Next, a separation step of separating the combination of the first metal layer 32 and the second metal layer 37 from the base material 151 is performed. Thus, the first metal layer 32 provided with the first opening 30 and the first surface dummy opening 84 in a predetermined pattern, and the second opening 35 and the first surface dummy opening communicating with the first opening 30. The vapor deposition mask 20 including the second metal layer 37 provided with the second surface dummy opening 85 communicating with the portion 84 can be obtained.

  Hereinafter, an example of the separation step will be described in detail. First, a film in which a substance having adhesiveness is provided by coating or the like is attached to a combination of the first metal layer 32 and the second metal layer 37 formed on the substrate 151. Next, by pulling up or winding up the film, the film is pulled away from the base material 151, thereby separating the combination of the first metal layer 32 and the second metal layer 37 from the base material 151 of the pattern substrate 150. . Thereafter, the film is peeled off from the combination of the first metal layer 32 and the second metal layer 37.

  In addition, in the separation step, first, a gap for triggering separation is formed between the combination of the first metal layer 32 and the second metal layer 37 and the base material 151, and then, in this gap. Air may be blown to facilitate the separation process.

  Note that as the substance having adhesiveness, a substance that loses adhesiveness when irradiated with light such as UV or when heated may be used. In this case, after the combined body of the first metal layer 32 and the second metal layer 37 is separated from the base material 151, a step of irradiating the film with light and a step of heating the film are performed. Thereby, the process of peeling the film from the combination of the first metal layer 32 and the second metal layer 37 can be facilitated. For example, the film can be peeled off in a state in which the film and the combination of the first metal layer 32 and the second metal layer 37 are maintained in parallel with each other as much as possible. Accordingly, it is possible to prevent the combined body of the first metal layer 32 and the second metal layer 37 from being curved when the film is peeled off. This causes the deposition mask 20 to be deformed such as curved. This can be suppressed.

  The vapor deposition mask 20 produced in this way is produced from the vapor deposition mask intermediate 110 in which a plurality of vapor deposition masks 20 are produced at a time as shown in FIG. 35, similarly to the vapor deposition mask intermediate 100 shown in FIG. May be. The vapor deposition mask intermediate 110 is not elongated like the vapor deposition mask intermediate 110 shown in FIG. On the other hand, there is a case where the vapor deposition mask 20 is individually produced in a sheet form without being produced as such a vapor deposition mask intermediate 110. In any case, due to the non-uniformity of current density, etc., it may be formed so as to be recessed in plan view, similar to the vapor deposition mask 20 produced by the etching process. Even in this case, by providing the dummy region 80 as described above, it is possible to prevent the position of the through hole 25 formed in the effective region 22 from being shifted at the time of tensioning. Accuracy can be improved.

  In the vapor deposition mask 20 shown in FIG. 28 to FIG. 35, an example in which the cross-sectional shape of the dummy hole 86 is the same shape as the cross-section of the through hole 25 is shown. However, the cross-sectional shape of the dummy hole 86 can be arbitrary as long as it can be formed by plating. Furthermore, the second dummy recess 88 as shown in FIG. 26 can also be formed by plating. In this case, for example, in the resist forming process shown in FIG. 33, the second metal layer 37 is not formed by the resist pattern 155 by forming the resist pattern 155 on the first metal layer 32 and performing the second plating process. A second dummy recess 88 can be formed in the portion.

(Second modification of the manufacturing method of the evaporation mask)
In the above-described embodiment, the example in which the vapor deposition mask 20 is configured by laminating at least two metal layers of the first metal layer 32 and the second metal layer 37 has been described. However, the vapor deposition mask 20 may be configured by one metal layer 27 in which a plurality of through holes 25 are formed in a predetermined pattern. Hereinafter, an example in which the vapor deposition mask 20 includes one metal layer 27 will be described with reference to FIGS. 36 to 38. In this modification, a portion located on the first surface 20a among the through holes 25 from the first surface 20a to the second surface 20b of the vapor deposition mask 20 is referred to as a first opening 30 and Of these, the portion located on the second surface 20 b is referred to as a second opening 35.

In the vapor deposition mask 20 shown in FIG. 38, the material remaining amount specifically means the amount of the material constituting the metal layer 27 formed by the plating process. Since the material remaining amount in such a vapor deposition mask 20 can also be obtained in the same manner as the material remaining amount in the vapor deposition mask 20 produced by the above-described etching process, detailed description thereof is omitted here. The thickness _tu is a distance between the first surface 20a and the second surface 20b of the vapor deposition mask 20 at the center position Ou of the reference region U or a position in the vicinity of the center position Ou (see FIG. 10). Good.

  A method for manufacturing the vapor deposition mask 20 according to this modification will be described.

  First, a base material 151 on which a predetermined conductive pattern 152 is formed is prepared. Next, as shown in FIG. 36, a resist forming process is performed in which a resist pattern 155 is formed on the base material 151 with a predetermined gap 156 therebetween. Preferably, the distance between the side surfaces 157 of the resist pattern 155 that defines the gap 156 of the resist pattern 155 becomes narrower as the distance from the base material 151 increases. That is, the resist pattern 155 has a shape in which the width of the resist pattern 155 becomes wider as the distance from the base material 151 increases, that is, a so-called reverse tapered shape.

  An example of a method for forming such a resist pattern 155 will be described. For example, first, a resist film containing a photocurable resin is provided on the surface of the base material 151 on the side where the conductive pattern 152 is formed. Next, the resist film is exposed by irradiating the resist film with exposure light incident on the base material 151 from the side opposite to the side on which the resist film is provided in the base material 151. Thereafter, the resist film is developed. In this case, a resist pattern 155 having an inversely tapered shape as shown in FIG. 36 can be obtained based on exposure light wraparound (diffraction).

  Next, as shown in FIG. 37, a plating process is performed in which a plating solution is supplied to the gap 156 of the resist pattern 155 to deposit the metal layer 27 on the conductive pattern 152. Then, by performing the above-mentioned removal process and separation process, as shown in FIG. 38, the vapor deposition mask 20 provided with the metal layer 27 provided with the through holes 25 in a predetermined pattern can be obtained.

(Variation of vapor deposition mask)
In the above-described embodiment, an example in which the effective area 22 of the vapor deposition mask 20 is a so-called stick-shaped vapor deposition mask 20 arranged in a line in the longitudinal direction of the vapor deposition mask 20 as illustrated in FIG. 1 will be described. did. However, for example, by providing a dummy region on the vapor deposition mask 20 in which the effective regions are arranged in a grid as shown in FIG. 39, the positional accuracy of the through hole 25 at the time of stretching can be improved.

  The vapor deposition mask 20 shown in FIG. 39 includes a plurality of first effective regions 22A arranged in the longitudinal direction (first direction) of the vapor deposition mask 20, and a plurality of second effective regions 22B arranged in the longitudinal direction. It has. Among these, the second effective region 22B is provided at a position different from the first effective region 22A in the width direction (second direction) orthogonal to the longitudinal direction of the vapor deposition mask 20. In particular, in the form shown in FIG. 39, the second effective region 22B is provided closer to the center in the width direction of the vapor deposition mask 20 than the first effective region 22A. The through holes 25 described above are formed in the first effective region 22A and the second effective region 22B, respectively. In the form shown in FIG. 39, the first effective region 22A is arranged on one side edge 20h side and the other side edge 20h side of the pair of side edges 20h that determine the width of the vapor deposition mask 20, respectively. The second effective region 22B is arranged at the center position in the width direction of the vapor deposition mask 20. That is, the second effective area 22B is arranged between two columns formed by the first effective area 22A, and three columns of the effective areas 22A and 22B are formed in total.

  In the vapor deposition mask 20 shown in FIG. 39, the pair of ears 24 are provided on both sides of the first effective region 22 </ b> A and the second effective region 22 </ b> B in the longitudinal direction of the vapor deposition mask 20. The ear | edge part 24 is located in the both ends 20e in the longitudinal direction of the vapor deposition mask 20. As shown in FIG. In other words, two rows formed by the first effective region 22A and one row formed by the second effective region 22B are provided between the pair of ear portions 24. As described above, in the form shown in FIG. 39, the pair of ears 24 are arranged in the longitudinal direction of the vapor deposition mask 20, and the first direction in which the pair of ears 24 is arranged is the longitudinal direction. Yes. When the entire length A (see FIG. 1) of the vapor deposition mask 20 is smaller than the width dimension of the vapor deposition mask 20 (dimension in the direction perpendicular to the direction indicated by the length A), the pair of ear portions 24 is used. The first direction in which is arranged is not the longitudinal direction of the vapor deposition mask 20 but the short direction, and even in this case, it is within the scope of the present invention.

  A first dummy area 80A is interposed between each of the ear portions 24 and the first effective area 22A. In other words, in the longitudinal direction of the vapor deposition mask 20, the first dummy regions 80A are provided on both sides of the plurality of first effective regions 22A. Similarly, a second dummy region 80B is interposed between each of the ear portions 24 and the second effective region 22B. In other words, in the longitudinal direction of the vapor deposition mask 20, the second dummy regions 80B are provided on both sides of the plurality of second effective regions 22B.

  The first dummy region 80A and the second dummy region 80B are regions intended to adjust the tension applied to each of the effective regions 22A and 22B by the tension applied to the vapor deposition mask 20 during stretching. That is, when the first dummy region 80A and the second dummy region 80B are stretched on the frame 15 (see FIG. 1), the extension of the first dummy region 80A itself is different from the extension of the second dummy region 80B itself. This is an area configured as described above. The first dummy region 80A and the second dummy region 80B are different from the dummy region 80 shown in FIG. 1 and the like in that each extension is configured to be uniform in the width direction. The configuration is the same as that of the dummy region 80. As an example, a dummy hole 86 as shown in FIG. 4 is provided in the first dummy region 80A and the second dummy region 80B.

  The material remaining amount of the material constituting the vapor deposition mask 20 in the first dummy region 80A and the material remaining amount of the material constituting the vapor deposition mask 20 in the second dummy region 80B are different from each other. In the form shown in FIG. 39, the material remaining amount of the first dummy region 80A is larger than the material remaining amount of the second dummy region 80B. For example, by increasing the arrangement pitch (see FIG. 8A) in the width direction of the first surface dummy openings 84 in the first dummy region 80A than in the second dummy region 80B, the material remaining amount of the first dummy region 80A can be reduced. The amount of remaining material in the second dummy region 80B can be made larger. Further, for example, the first dummy area 80A is made smaller in the longitudinal dimension (see FIG. 8B) of the first surface dummy opening 84 (of the vapor deposition mask 20) than in the second dummy area 80B, whereby the first dummy The material remaining amount in the region 80A can be made larger than the material remaining amount in the second dummy region 80B.

  In the first dummy region 80A, the material remaining amount is the same in the width direction of the vapor deposition mask 20, and in the second dummy region 80B, the material remaining amount is the same in the width direction. The first dummy region 80A and the second dummy region 80B have, for example, the arrangement pitch and shape of the first surface dummy opening 84, the second surface dummy opening 85, and the dummy hole 86 such that each dummy region 80A, Within 80B, it is the same over the width direction.

  Here, a method for obtaining the material remaining amount will be described. The reference region U can be an arbitrary region in each of the dummy regions 80A and 80B. For example, the reference region U can be a region having a circular planar shape as shown in FIG. As an example, when the width of each of the dummy areas 80A and 80B is 80 mm, the diameter of the reference area U is preferably 20 mm.

  The material remaining amount defined as described above is an amount excluding the influence of the thicknesses of the dummy regions 80A and 80B. That is, if the thicknesses of the first dummy region 80A and the second dummy region 80B are different, it is considered that the remaining material amount also changes due to the difference in thickness. However, in the vapor deposition mask 20 shown in FIG. 39, the arrangement pitch and size of the first surface dummy openings 84 and the second surface dummy openings 85 in the first dummy region 80A and the first surface dummy openings in the second dummy region 80B. The opening pitch of the dummy holes 86 in the first dummy area 80A and the opening ratio of the dummy holes 86 in the second dummy area 80B are made different by changing the arrangement pitch and size of the portion 84 and the second surface dummy opening 85. ing. Thereby, the elongation rate of the first dummy region 80A and the elongation rate of the second dummy region 80B are made different. Therefore, by defining the material remaining amount as described above, each dummy area that can affect the elongation rate of each dummy area 80A, 80B by eliminating the influence of the difference in thickness of each dummy area 80A, 80B. The material remaining amount of 80A and 80B can be defined.

  Note that a more specific method for obtaining the material remaining amount in each of the dummy regions 80A and 80B of the vapor deposition mask 20 shown in FIG. 39 is the same as the method for obtaining the material remaining amount described with reference to FIG. Detailed description will be omitted.

  By the way, the vapor deposition mask 20 shown in FIG. 39 can be produced from the elongate metal plate 64 shown in FIG. 40, for example. In this case, the first effective area 22A is arranged on one side edge 64e side and the other side edge 64e side of the pair of side edges 64e of the long metal plate 64, and the second effective area 22B. Are arranged closer to the center in the width direction D2 of the long metal plate 64 than the first effective region 22A (here, at the center position in the width direction of the long metal plate 64). A corrugated shape similar to the corrugated shape (ear extension) described above appears on the side edge 64e of the long metal plate 64 as shown in FIG. For this reason, a wavy shape larger than that of the second effective region 22B can appear in the first effective region 22A.

  Therefore, in the vapor deposition mask 20 shown in FIG. 39, as described above, in the longitudinal direction of the vapor deposition mask 20, the first dummy regions 80A are provided on both sides of the first effective region 22A, and the first dummy regions 80B are formed on both sides of the second effective region 22B. Two dummy regions 80B are provided. The material remaining amount in the first dummy region 80A is larger than the material remaining amount in the second dummy region 80B.

  Thus, when the vapor deposition mask 20 is stretched, the extension of the first dummy region 80A can be made smaller than the extension of the second dummy region 80B. In this case, the tension applied to the first effective region 22A having a relatively large corrugated shape can be made larger than the tension applied to the second effective region 22B having a relatively small corrugated shape, and the extension of the first effective region 22A is effective. Can be increased. For this reason, it can prevent that the position of the through-hole 25 formed in 22 A of 1st effective area | regions slip | deviates, and can improve the position accuracy of the through-hole 25 at the time of extension.

  In the vapor deposition mask 20 shown in FIG. 39, in the width direction of the vapor deposition mask 20, one column formed by the second effective region 22B is formed between the two columns formed by the first effective region 22A. Indicated. However, the number of columns formed by the first effective area 22A and the number of columns formed by the second effective area 22B are arbitrary. For example, although not shown, a row formed by another effective region is interposed between a row formed by the first effective region 22A and a row formed by the second effective region 22B, and the evaporation mask 20 has a total of effective regions. Five rows may be formed. In addition, other dummy regions may be provided on both sides of the other effective regions in the longitudinal direction. For this other dummy region, it is preferable to set the material remaining amount in accordance with the degree of the wavy shape in the other effective region. For example, the material remaining amount in the material remaining amount in the other dummy regions may be smaller than the material remaining amount in the first dummy region 80A and larger than the material remaining amount in the second dummy region 80B. Further, for example, two columns formed by the first effective area 22A are interposed between two columns formed by the first effective area 22A, and the evaporation mask 20 has four columns of effective areas in total. May be.

(Other variations of vapor deposition mask)
In the above-described embodiment, as shown in FIG. 11, two stick-shaped first vapor deposition masks 20A and one stick-shaped second vapor deposition mask 20B are manufactured from the vapor deposition mask intermediate 100. An example was described. However, the present invention is not limited to this, and for example, as shown in FIG. 41, a vapor deposition mask 20 having effective regions arranged in a lattice shape may be manufactured from the vapor deposition mask intermediate 100.

  The vapor deposition mask 20 shown in FIG. 41 includes a plurality of first effective regions 22A arranged in a row in the longitudinal direction of the vapor deposition mask 20, and a plurality of second effective regions 22B arranged in a row in the longitudinal direction. In total, two columns of effective areas are formed. The vapor deposition mask intermediate 100 includes two such vapor deposition masks 20.

  41 includes a long metal plate 64, and a first effective region 22A and a second effective region 22B provided on the long metal plate 64. Among these, the first effective region 22A is disposed on one side edge 64e side of the pair of side edges 64e of the long metal plate 64. The second effective area 22B is arranged closer to the center in the width direction D2 of the long metal plate 64 than the first effective area 22A. That is, in the vapor deposition mask intermediate 100 shown in FIG. 41, the outline of the first effective region 22A and the outline of the second effective region 22B of the two vapor deposition masks 20 pass through the center in the width direction D2 of the long metal plate 64. The long metal plate 64 is arranged symmetrically with respect to the center line 64CL extending in the longitudinal direction D1. Here, the outlines of the effective regions 22A and 22B are a circumscribed line extending in the longitudinal direction of the vapor deposition mask 20 circumscribed with respect to the outermost through hole 25 among the many formed through holes 25 and a width direction. It means the contour simulated by the extending tangent. When the outlines of the effective areas 22A and 22B are arranged in line symmetry, the pattern of the through holes 25 formed in the effective areas 22A and 22B is not limited to being formed in line symmetry. That is, even when the outlines of the effective regions 22A and 22B are arranged in line symmetry, for example, when the patterns of the through holes 25 formed in the effective regions 22A and 22B are the same (in other words, There is a possibility that the pattern of the through holes 25 in the effective areas 22A and 22B is translated) and the pattern of the through holes 25 in the effective areas 22A and 22B are different.

  Each vapor deposition mask 20 obtained from the vapor deposition mask intermediate 100 has a plurality of first effective regions 22A arranged in the longitudinal direction of the vapor deposition mask 20 and a plurality of second effective areas arranged in the longitudinal direction of the vapor deposition mask 20. Effective area 22B. Among these, the second effective area 22 </ b> B is provided at a position different from the first effective area 22 </ b> A in the width direction of the vapor deposition mask 20. More specifically, the first effective area 22A is arranged on one side edge 20h side of the pair of side edges 20h of the vapor deposition mask 20, and the second effective area 22B is on the side of the other side edge 20h. Is arranged. The outline of the first effective area 22A and the outline of the second effective area 22B are arranged symmetrically with respect to a center line 20CL extending in the longitudinal direction of the vapor deposition mask 20 through the center in the width direction of the vapor deposition mask 20. Has been. One side edge 20h corresponding to the first effective region 22A corresponds to one side edge 64 side of the long metal plate 64, and the other side edge 20h corresponding to the second effective region 22B is long. This corresponds to the center side of the width metal plate 64 in the width direction. For this reason, one side edge 20h corresponding to the first effective region 22A may appear to have a larger wavy shape than the other side edge 20h corresponding to the second effective region 22B.

  Also in the vapor deposition mask 20 shown in FIG. 41, similarly to the vapor deposition mask 20 shown in FIG. 39, first dummy regions 80A are provided on both sides of the first effective region 22A, and second dummy regions are provided on both sides of the second effective region 22B. 80B is provided. The material remaining amount in the first dummy region 80A is larger than the material remaining amount in the second dummy region 80B. For this reason, even when a wavy shape larger than the second effective region 22B appears in the first effective region 22A, the wavy shape compares the tension applied to the first effective region 22A having a relatively large wavy shape. The tension applied to the second effective area 22B can be made larger than the target tension. Thereby, the elongation of the first effective area 22A can be effectively increased. For this reason, it can prevent that the position of the through-hole 25 formed in 22 A of 1st effective area | regions slip | deviates, and can improve the position accuracy of the through-hole 25 at the time of extension.

  In addition, in the vapor deposition mask intermediate body 100 shown in FIG. 41, the example provided with the two vapor deposition masks 20 in which two rows of the effective area were formed in total was demonstrated. However, the present invention is not limited to this, and the number of deposition masks 20 included in the deposition mask intermediate 100 is arbitrary as long as the undulation shape in the first effective region 22A is larger than the undulation shape in the second effective region 22B. Moreover, the number of rows of effective areas formed on the vapor deposition mask 20 is arbitrary.

20 vapor deposition mask 20A first vapor deposition mask 20B second vapor deposition mask 20CL center line 21 metal plate 22 effective area 22A first effective area 22B second effective area 24 ear 25 through hole 64 long metal plate 80 dummy area 80A first dummy Region 80B Second dummy region 81 First region side edge 82 Second region side edge 83 Region center portion 84 First surface dummy opening 85 Second surface dummy opening 86 Dummy hole 87 First dummy recess 88 Second dummy Recess 100, 110 Deposition mask intermediate

Claims (10)

A vapor deposition mask including a first surface and a second surface located on the opposite side of the first surface,
An effective area in which a plurality of through holes are formed;
A pair of ears provided on both sides of the effective area in the first direction of the vapor deposition mask;
A first surface dummy opening provided on the first surface of the vapor deposition mask and a second surface dummy provided on the second surface, interposed between at least one of the pair of ears and the effective region. A dummy region in which at least one of the openings is formed,
The dummy region includes a first region side edge provided on one side in a second direction orthogonal to the first direction of the vapor deposition mask, a second region side edge provided on the other side, Have
The volume per unit area V, and the thickness t _u, when the material remaining amount of the material of the deposition mask was V / t _u, the material remaining amount in the first region side edge of the dummy region A vapor deposition mask characterized by being larger than the remaining amount of the material at the second region side edge. The dummy region further has a region central portion provided between the first region side edge and the second region side edge,
The material remaining amount in the center of the region is smaller than the material remaining amount in the first region side edge and larger than the material remaining amount in the second region side edge. 2. The vapor deposition mask according to 1. In the dummy region, the first surface dummy opening is provided on the first surface, and the second surface dummy opening is provided on the second surface,
3. The dummy area defined by the first surface dummy opening and the second surface dummy opening and provided with a dummy hole penetrating the dummy area is provided in the dummy area. Vapor deposition mask. In the dummy region, the first surface dummy opening is provided in the first surface,
The vapor deposition mask according to claim 1, wherein a first dummy recess defined by the first surface dummy opening is provided in the dummy region. In the dummy region, the second surface dummy opening is provided in the second surface,
The vapor deposition mask according to claim 1, wherein a second dummy recess defined by the second surface dummy opening is provided in the dummy region. In the dummy region, the first surface dummy opening is provided on the first surface, and the second surface dummy opening is provided on the second surface,
A first dummy recess defined by the first surface dummy opening is provided in the dummy region, and a second dummy recess defined by the second surface dummy opening is provided,
The first surface dummy openings and the second surface dummy openings are alternately arranged when viewed along the normal direction of the vapor deposition mask. Vapor deposition mask. A vapor deposition mask including a first surface and a second surface located on the opposite side of the first surface,
A first effective region in which a plurality of through holes are formed;
In a second direction orthogonal to the first direction of the vapor deposition mask, a second effective region provided at a position different from the first effective region, wherein a plurality of through holes are formed. When,
A pair of ears provided on both sides of the first effective area and the second effective area in the first direction of the vapor deposition mask;
A first surface dummy opening provided on the first surface of the vapor deposition mask and a second surface provided on the second surface, interposed between at least one of the pair of ears and the first effective region. A first dummy region in which at least one of the surface dummy openings is formed;
A first surface dummy opening provided on the first surface of the vapor deposition mask and a second surface provided on the second surface, interposed between at least one of the pair of ears and the second effective region. A second dummy region in which at least one of the surface dummy openings is formed,
The volume per unit area V, and the thickness t _u, when the material remaining amount of the material of the deposition mask was V / t _u, the material remaining amount in the first dummy area, the second dummy area An evaporation mask characterized by being larger than the remaining amount of the material.   The vapor deposition mask according to claim 7, wherein the second effective area is provided closer to a center side in the second direction of the vapor deposition mask than the first effective area. A vapor deposition mask intermediate for producing a first vapor deposition mask and a second vapor deposition mask,
A long metal plate including a first surface and a second surface located on the opposite side of the first surface;
A first effective area provided on the metal plate, constituting the first vapor deposition mask, and having a plurality of through holes;
A second effective region provided on the center side in the width direction of the metal plate with respect to the first effective region, the second effective region constituting the second vapor deposition mask and having a plurality of through holes; ,
A dummy region provided on at least one side of both sides of the first effective region in the longitudinal direction of the metal plate, constituting the first vapor deposition mask, and provided on the first surface of the metal plate A dummy region in which at least one of the first surface dummy opening and the second surface dummy opening provided in the second surface is formed,
The dummy region includes a first region side edge provided on the side opposite to the second deposition mask side, and a second region side edge provided on the second deposition mask side,
When the volume per unit area is V, the thickness is t _u , and the material remaining amount of the material constituting the first vapor deposition mask is V / _tu , the material remaining at the side edge of the dummy region in the first region The deposition mask intermediate characterized in that the amount is larger than the material remaining amount in the second region side edge. A vapor deposition mask intermediate for producing a vapor deposition mask,
A long metal plate including a first surface and a second surface located on the opposite side of the first surface;
A first effective region provided in the metal plate, wherein the first effective region has a plurality of through holes;
A second effective region provided on the center side in the width direction of the metal plate from the first effective region, wherein the second effective region is formed with a plurality of through holes;
Provided on at least one side of both sides of the first effective area in the longitudinal direction of the metal plate, and provided on the first surface dummy opening and the second surface provided on the first surface of the metal plate. A first dummy region in which at least one of the second surface dummy openings is formed;
Provided on at least one side of both sides of the second effective region in the longitudinal direction of the metal plate, and provided on a first surface dummy opening provided on the first surface of the metal plate and the second surface. A second dummy region in which at least one of the second surface dummy openings is formed,
The volume per unit area V, and the thickness t _u, when the material remaining amount of the material of the deposition mask was V / t _u, the material remaining amount in the first dummy area, the second dummy area The vapor deposition mask intermediate characterized by being larger than the residual amount of material.

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