JP6631897B2 - Manufacturing method of evaporation mask and evaporation mask - Google Patents

Description

  The present invention relates to a method for manufacturing a vapor deposition mask used for performing vapor deposition in a desired pattern, and more particularly to a method for manufacturing a vapor deposition mask capable of forming a through hole with high accuracy. The present invention also relates to an evaporation mask used for performing evaporation in a desired pattern, and more particularly, to an evaporation mask having an accurate through hole.

  Conventionally, a method of forming a thin film in a desired pattern using a vapor deposition mask including a plurality of through holes arranged in a desired pattern is known. In recent years, for example, when an organic material is vapor-deposited on a substrate at the time of manufacturing an organic EL display device, vapor deposition may be used when depositing an extremely expensive material. In general, a deposition mask can be manufactured by forming a through-hole in a metal plate by etching using photolithography technology (for example, Patent Document 1).

  When depositing an evaporation material on a substrate using an evaporation mask, it is necessary to accurately deposit the evaporation material on the substrate. For this purpose, it is required to form the through holes of the evaporation mask with high accuracy.

JP-A-2004-39319

  As described above, the evaporation mask is obtained by forming a large number of through holes in a metal plate by etching. In this case, a recess is first formed in the metal plate by etching, and a through hole is provided in the recess. As described above, a concave portion is formed in a metal plate by etching, and thereafter, a through hole is provided in the concave portion. The concave portion is accurately formed in the metal plate, that is, a plurality of concave portions having a uniform sectional shape in the metal plate. It is not easy to form the through holes, and it is difficult to form the through-holes with high precision if the cross-sectional shape of the concave portion varies.

  When the shape of the concave portion and the shape of the through hole of the evaporation mask vary as described above, it becomes difficult to accurately deposit the evaporation material on the substrate.

  The present invention has been made in view of such a point, and an object of the present invention is to provide a method for manufacturing a vapor deposition mask capable of forming a concave portion and a vapor deposition mask.

  The present invention includes a perforated region including a plurality of through holes arranged in a lattice shape, and a peripheral region located around the perforated region, and is used in a state where the perforated region is pulled in at least one direction. In a method of manufacturing a mask, a step of providing a resist pattern on a first surface of a metal plate having a first surface and a second surface facing each other, and the step of forming the metal from the side of the first surface using the resist pattern as a mask A step of etching a plate and forming a recess having the through hole from a first surface side in a region of the metal plate forming the perforated region; and forming the recess in the step of forming the recess. On the first surface, the top located at the center of any four adjacent through-holes forming the lattice shape forms a recess while maintaining contact with the resist pattern, and each recess forms the lattice shape. Any A vapor deposition mask, which is surrounded by four rectangular ridges connecting between four adjacent tops, and wherein the through-hole includes sides extending in two directions parallel to the arrangement direction of the through-holes. Is a manufacturing method. Each ridgeline may descend from one top to the inside in the thickness direction of the metal plate, and then rise to the other top outward in the thickness direction of the metal plate.

  The present invention relates to a method for manufacturing a vapor deposition mask including a perforated region including a plurality of through holes arranged in a lattice shape and a peripheral region located around the perforated region. Providing a resist pattern on a first surface of a metal plate having a surface and a second surface, and etching the metal plate from the first surface side using the resist pattern as a mask to form the perforated region. Forming a recess having the through hole from the side of the first surface in a region of the metal plate, wherein in the step of forming the recess, any of the first surfaces of the metal plate forming a lattice shape The top located at the center of the four adjacent through-holes forms a recess while maintaining a state in contact with the resist pattern, and the through-holes extend along two directions orthogonal to each other in the perforated region. Each place The sequence at the same pitch, ridge extending between the two recesses adjacent extends in two directions to be parallel to each other and the direction of arrangement of the through-holes, a method for producing a deposition mask, characterized in that.

  The present invention is the method for manufacturing a vapor deposition mask, wherein, in the step of forming the concave portion, the metal plate is half-etched, and the concave portion does not reach the second surface.

  According to the present invention, in the step of forming the concave portion, erosion due to etching also proceeds in a direction along the plate surface of the metal plate, two adjacent concave portions merge under the resist pattern, and further, at least one concave portion. Characterized in that the wall surface of (1) merges with the wall surface of one of the other concave portions located around the one concave portion.

  According to the present invention, in the step of forming the concave portion, a merging portion formed by merging the two adjacent concave portions is separated from the resist pattern, and at the merging portion below the resist pattern, erosion due to etching is caused by a metal plate. And the junction portion is chamfered, and the thickness of the junction portion is smaller than the thickness of the top portion.

  According to the present invention, the metal plate is etched from the side of the second surface using a second resist pattern disposed on the second surface of the metal plate as a mask, and a second concave portion is formed from the side of the second surface. And forming the through-hole by connecting the concave portion and the second concave portion to form the through hole. .

  The present invention is directed to irradiating a laser beam into each recess formed from the first surface side so as not to penetrate the metal plate, and reaching the second surface of the metal plate from the inside of the recess. The method according to claim 1, further comprising the step of forming two recesses, wherein the recesses and the second recesses are formed so that the recesses are connected to the second recesses to form the through holes. It is a manufacturing method.

  The present invention is obtained by etching a metal plate having a first surface and a second surface opposed to each other from a first surface, and is arranged in a lattice shape in an evaporation mask used in a state of being pulled in at least one direction. A perforated region including a plurality of through holes formed therein, and a peripheral region located around the perforated region. In the perforated region, the first surface of the metal plate is directed toward the first surface. A plurality of recesses that are widened by the recesses are provided, and through holes are formed in the recesses. The top portion of the metal plate is located at the center of any four adjacent through holes forming a lattice shape. The thickness is equal to the thickness of the peripheral region, and each recess is surrounded by four rectangular ridges connecting any four adjacent tops forming a lattice shape, and the through hole is formed by the through hole. Parallel to the array direction of A deposition mask, characterized in that it comprises a side extending in direction. Each ridgeline may descend from one top to the inside in the thickness direction of the metal plate, and then rise to the other top outward in the thickness direction of the metal plate.

  The present invention provides a vapor deposition mask obtained by etching a metal plate having a first surface and a second surface opposed to each other from the first surface, a perforated region including a plurality of through holes arranged in a lattice shape, And a peripheral region located around the perforated region, wherein in the perforated region, the first surface of the metal plate is provided with a plurality of concave portions that become wider toward the first surface. In addition, a through hole is formed in the concave portion, and the thickness of the top located at the center of any four adjacent through holes constituting the lattice shape of the metal plate matches the thickness of the peripheral region, The concave portion is surrounded by four rectangular ridgelines connecting any four adjacent vertexes forming a lattice shape, and the through-holes are respectively defined along two directions orthogonal to each other in the perforated region. Are arranged at the same pitch of Two ridge extending between the recesses that fit Ri is a deposition mask, characterized in that extending in two directions to be parallel to each other and the arrangement direction of the through hole.

  The present invention is the vapor deposition mask, wherein the concave portion is formed by half etching, and the concave portion does not reach the second surface.

  In the present invention, a merging portion is formed by merging the wall surface of the concave portion and the wall surface of the other concave portion, and a thickness of the merging portion along a normal direction of the evaporation mask is smaller than a thickness of a top portion. This is a deposition mask characterized by the above.

  The present invention is the vapor deposition mask, wherein a second concave portion connected to the concave portion to form a through hole is formed at a position corresponding to the concave portion on the second surface of the metal plate.

  ADVANTAGE OF THE INVENTION According to this invention, the vapor deposition mask which has a recessed part and a through-hole formed accurately is provided.

FIG. 1 is a view for explaining an embodiment of the present invention, and is a schematic perspective view showing an example of a deposition mask device including a deposition mask. FIG. 2 is a diagram for explaining a method of performing vapor deposition using the vapor deposition mask device shown in FIG. FIG. 3A is a perspective view showing the vapor deposition mask shown in FIG. 1, and FIG. 3B is a partial plan view showing the vapor deposition mask. FIG. 4 is a perspective view showing an evaporation mask with a resist pattern. FIG. 5 is a sectional view taken along the line VV of FIG. FIG. 6 is a sectional view taken along the line VI-VI in FIG. FIG. 7 is a schematic view for generally explaining an example of a method for manufacturing the evaporation mask shown in FIG. FIG. 8 is a diagram for explaining an example of a method for manufacturing a deposition mask, and is a diagram illustrating a long metal plate in a cross section along a normal direction. FIG. 9 is a diagram for explaining an example of a method for manufacturing a deposition mask, and is a diagram illustrating a long metal plate in a cross section along a normal direction. FIG. 10 is a diagram for explaining an example of a method for manufacturing a deposition mask, and is a diagram illustrating a long metal plate in a cross section along a normal direction. FIG. 11 is a view for explaining an example of a method of manufacturing a deposition mask, and is a view showing a long metal plate in a cross section along a normal direction. FIG. 12 is a diagram for explaining an example of a method of manufacturing a deposition mask, and is a diagram illustrating a long metal plate in a cross section along a normal direction. FIG. 13 is a view for explaining an example of a method for manufacturing a deposition mask, and is a view showing a long metal plate in a cross section along a normal direction. FIG. 14 is a diagram for explaining an example of a method for manufacturing a deposition mask, and is a diagram illustrating a long metal plate in a cross section along a normal direction. FIG. 15 is a plan view showing a resist pattern. FIG. 16 is a view corresponding to FIG. 9 and is a view for explaining a modified example of a method of forming a through hole. FIG. 17 is a view for explaining another modification of the method of forming a through hole. FIG. 18 is a view for explaining another modification of the method of forming a through hole. FIG. 19 is a view for explaining a modification of the method of manufacturing the evaporation mask. FIG. 20 is a view for explaining a modification of the method of manufacturing the evaporation mask.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings attached to the present specification, for convenience of illustration and comprehension, scales and vertical / horizontal dimensional ratios are appropriately changed and exaggerated from those of the actual products.

  1 to 15 are diagrams for explaining an embodiment according to the present invention. In the following embodiments and modifications thereof, a method of manufacturing a deposition mask used for patterning an organic light emitting material in a desired pattern on a glass substrate when manufacturing an organic EL display device will be described as an example. . However, without being limited to such an application, the present invention can be applied to an evaporation mask used for various applications and a method for manufacturing the evaporation mask.

  In the present specification, the terms “plate”, “sheet”, and “film” are not distinguished from each other based only on the difference in names. For example, "plate" is a concept that also includes members that can be called sheets and films. Therefore, for example, "metal plate" is distinguished from members called "metal sheets" and "metal films" only by the difference in designation. Can not be done.

  The “plate surface (sheet surface, film surface)” is a target plate-like (sheet-like, film-like) member when viewed as a whole and globally. Member, film-shaped member). Further, the normal direction used for a plate-shaped (sheet-shaped or film-shaped) member refers to the normal direction to the plate surface (sheet surface, film surface) of the member.

  Further, as used herein, the shapes and geometric conditions and their degrees are specified.For example, terms such as "parallel", "orthogonal", and "identical", and values of length and angle are strict. Without being constrained by the meaning, it should be interpreted to include a range in which a similar function can be expected.

  First, an example of a deposition mask apparatus including a deposition mask to be manufactured will be described mainly with reference to FIGS. 1 to 6. Here, FIG. 1 is a perspective view showing an example of a vapor deposition mask device including a vapor deposition mask, and FIG. 2 is a diagram for explaining a method of using the vapor deposition mask device shown in FIG. FIG. 3 is a plan view showing the deposition mask from the first surface side, and FIGS. 5 to 6 are cross-sectional views at respective positions in FIG.

  The vapor deposition mask device 10 includes a vapor deposition mask 20 made of a rectangular metal plate 21 and a frame 15 attached to a peripheral portion of the vapor deposition mask 20. The vapor deposition mask 20 has a large number of through holes 25 formed by etching the metal plate 21 having the first surface 21a and the second surface 21b facing each other from at least the first surface 21a. As shown in FIG. 2, the vapor deposition mask device 10 is supported in a vapor deposition device 90 such that the vapor deposition mask 20 faces a substrate to be vapor-deposited, for example, a glass substrate 92, and vapor deposition material is deposited on the substrate. Used for

  In the vapor deposition device 90, the vapor deposition mask 20 and the glass substrate 92 come into close contact with each other by magnetic force from a magnet (not shown). In the vapor deposition device 90, a crucible 94 for accommodating a vapor deposition material (for example, an organic light emitting material) 98 and a heater 96 for heating the crucible 94 are disposed below the glass substrate 92 with the vapor deposition mask device 10 interposed therebetween. Have been. The evaporation material 98 in the crucible 94 is vaporized or sublimated by the heating from the heater 96 and adheres to the surface of the glass substrate 92. As described above, a large number of through holes 25 are formed in the evaporation mask 20, and the evaporation material 98 adheres to the glass substrate 92 via the through holes 25. As a result, the vapor deposition material 98 is formed on the surface of the glass substrate 92 in a desired pattern corresponding to the position of the through hole 25 of the vapor deposition mask 20.

  As shown in FIG. 1, in the present embodiment, the vapor deposition mask 20 is made of a metal plate 21 and has a substantially rectangular shape in plan view, and more precisely, a substantially rectangular contour in plan view. The metal plate 21 of the evaporation mask 20 includes a perforated region 22 including through holes 25 formed in a regular array, and a peripheral region 23 surrounding the perforated region 22. The peripheral region 23 is a region for supporting the perforated region 22, and is not a region through which a deposition material intended to be deposited on the substrate passes. For example, in the vapor deposition mask 20 used for vapor deposition of an organic light emitting material for an organic EL display device, the perforated region 22 is formed on a substrate (glass substrate 92) on which the organic light emitting material is vapor deposited to form pixels. A region, that is, a region in the evaporation mask 20 facing a region on the substrate that forms the display surface of the manufactured substrate for an organic EL display device. However, for various purposes, a through-hole or a concave portion may be formed in the peripheral region 23. In the example shown in FIG. 1, each perforated region 22 has a substantially rectangular shape in a plan view, and more precisely, a substantially rectangular contour in a plan view.

  In the illustrated example, the plurality of perforated regions 22 are arranged at predetermined intervals along one direction parallel to one side of the evaporation mask 20 and at predetermined intervals along another direction orthogonal to the one direction. Are arranged at intervals. In the illustrated example, one perforated region 22 corresponds to one organic EL display device. That is, according to the vapor deposition mask device 10 (vapor deposition mask 20) shown in FIG. 1, multi-sided vapor deposition is possible. However, without being limited to the illustrated example, the vapor deposition mask 20 includes a plurality of perforated regions 22 arranged in a line along one direction, and the vapor deposition mask device 10 is arranged in the longitudinal direction (one direction). A plurality of deposition masks 20 arranged in a direction orthogonal to each other and attached to the frame 15 may be provided.

  As shown in FIGS. 3A and 3B, in the illustrated example, the plurality of through holes 25 formed in each of the perforated regions 22 are formed along two directions orthogonal to each other in the perforated region 22. Each is arranged at a predetermined same pitch. In this case, the plurality of through holes 25 are formed in the metal plate 21 by etching as described later, and the through holes 25 are arranged in a lattice. A portion of the first surface 21a of the metal plate 21 which is located at the center of any four adjacent through holes 25 forming the lattice shape is a top 33a, and the thickness of the top 33a is a value before etching. The thickness of the metal plate 21 is maintained. That is, the thickness of the top portion 33 a matches the thickness of the peripheral region 23. An example of the through hole 25 formed in the metal plate 21 will be described in further detail mainly with reference to FIGS.

  3 to 6, a deposition mask 20A with a resist pattern is constituted by the deposition mask 20 and a first resist pattern (also simply referred to as a resist pattern) 65a provided on the first surface 20a of the deposition mask 20. Is done. 3 is a perspective view showing the vapor deposition mask 20 from the first surface 20a side. FIG. 4 is a perspective view showing a deposition mask 20A with a resist pattern. 5 is a cross-sectional view taken along line VV of FIG. 4, and FIG. 6 is a cross-sectional view taken along line VI-VI of FIG. As shown in FIGS. 5 and 6, the plurality of through holes 25 are formed on the first surface 20 a on one side along the normal direction of the vapor deposition mask 20, and on the other side along the normal direction of the vapor deposition mask 20. It extends between the second surface 20b and the second surface 20b, and penetrates the vapor deposition mask 20. In the illustrated example, as described later in detail, a first concave portion (also simply referred to as a concave portion) is formed in the metal plate 21 from the first surface 21a side of the metal plate 21 which is one side in the normal direction of the evaporation mask. 30 is formed by etching, a second recess 35 is formed in the metal plate 21 from the side of the second surface 21 b which is the other side in the normal direction of the metal plate 21, and the first recess 30 and the second recess 35 A through hole 25 is formed.

  Further, as shown in FIGS. 4 to 6, in the evaporation mask 20 </ b> A with the resist pattern including the evaporation mask 20 and the first resist pattern 65 a provided on the first surface 20 a of the evaporation mask 20, The top 33a located at the center of the four through holes 25 forming the lattice shape is in contact with the first resist pattern 65.

  Further, as shown in FIG. 15, the first resist pattern 65a of the deposition mask with resist pattern 20A functions as a mask when the first recess 30 is formed by etching, and corresponds to each first recess 30. And a bridge 67a between the holes 66a. The top 33a of the deposition mask 20 is in contact with the first resist pattern 65a in the region 69a.

  As shown in FIGS. 3 to 6, from one side in the normal direction of the vapor deposition mask 20 to the other side, that is, from the first surface 20 a side to the second surface 20 b side of the vapor deposition mask 20. Thus, the cross-sectional area of each first recess 30 in the cross section along the plate surface of the vapor deposition mask 20 at each position along the normal direction of the vapor deposition mask 20 gradually becomes smaller. In other words, in the cross section along the normal direction of the evaporation mask 20, the width of each first recess 30 along the plate surface of the evaporation mask 20 at each position along the normal direction of the evaporation mask 20 is From the side of the first surface 20a toward the side of the second surface 20b. In particular, in the illustrated example, the cross-sectional area of each of the first concave portions 30 continues to decrease so as to decrease from the side of the first surface 20a of the vapor deposition mask 20 toward the side of the second surface 20b. As shown in FIG. 3, the wall surface 31 of the first concave portion 30 extends in a direction intersecting the normal direction of the vapor deposition mask 20 in the entire region, and one of the wall surfaces 31 along the normal direction of the vapor deposition mask 20. Exposed to the side.

  Similarly, the cross-sectional area of each second concave portion 35 in a cross section along the plate surface of the vapor deposition mask 20 at each position along the normal direction of the vapor deposition mask 20 is from the other side in the normal direction of the vapor deposition mask 20. The size gradually decreases toward one side, that is, from the side of the second surface 20b of the vapor deposition mask 20 to the side of the first surface 20a. In other words, in the cross section along the normal direction of the deposition mask 20, the width of each second recess 35 along the plate surface of the deposition mask 20 at each position along the normal direction of the deposition mask 20 is From the side of the second surface 20b toward the side of the first surface 20a. In particular, in the illustrated example, the cross-sectional area of each second concave portion 35 continues to change so as to decrease from the side of the second surface 20b of the vapor deposition mask 20 toward the side of the first surface 20a. The wall surface 36 of the second concave portion 35 extends in a direction intersecting the normal direction of the vapor deposition mask 20 in the entire region, and is exposed toward the other side along the normal direction of the vapor deposition mask 20. I have.

  As shown in FIGS. 3 to 6, the through-hole 25 is formed from the first concave portion 30 tapered from the first surface 20 a side of the vapor deposition mask 20 and from the second surface 20 b side of the vapor deposition mask 20. It is defined by the connection with the tapered second concave portion 35. As shown in FIG. 3, in the illustrated example, one first recess 30 and one second recess 35 are formed for one through hole 25. Therefore, each through hole 25 is formed by connecting one first concave portion 30 and the second concave portion 35 provided corresponding to the first concave portion 30.

  In addition, as shown in FIGS. 3 to 6, the wall surface 31 of the first concave portion 30 and the wall surface 36 of the second concave portion 35 are connected via a circumferential connection portion 41. The connecting portion 41 is a protruding portion where the wall surface 31 of the first concave portion 30 inclined with respect to the normal direction of the vapor deposition mask and the wall surface 36 of the second concave portion 35 inclined with respect to the normal direction of the vapor deposition mask merge. It is defined by ridges. The connecting portion 41 defines a through portion 42 in which the area of the through hole 25 is smallest when the vapor deposition mask 20 is viewed in plan.

  As shown in FIGS. 3 to 6, two adjacent through-holes 25 are formed on the surface on the other side along the normal direction of the evaporation mask, that is, on the second surface 20 b of the evaporation mask 20. They are separated from each other along the plate surface. That is, when the metal plate 21 is etched from the second surface 21b side of the metal plate 21 corresponding to the second surface 20b of the vapor deposition mask 20 to form the second recess 35 as in a manufacturing method described later. Then, the second surface 21b of the metal plate 21 remains between the two adjacent second concave portions 35.

  On the other hand, as shown in FIGS. 3 to 6, two adjacent first concave portions 30 are connected on the other side along the normal direction of the evaporation mask, that is, on the first surface 20 a side of the evaporation mask 20. ing. That is, when the metal plate 21 is etched from the first surface 21a side of the metal plate 21 corresponding to the first surface 20a of the vapor deposition mask 20 to form the first recess 30 as in a manufacturing method described later. The first surface 21a of the other metal plate 21 does not remain except for the top 33a between two adjacent first recesses 30. According to the first surface 20a of the vapor deposition mask 20 formed by the first concave portion 30, the vapor deposition mask is formed such that the first surface 20a of the vapor deposition mask 20 faces the vapor deposition material 98 as shown in FIG. When 20 is used, the utilization efficiency of the vapor deposition material 98 can be effectively improved.

  When the vapor deposition mask device 10 is housed in the vapor deposition device 90 as shown in FIG. 2, the first surface 20 a of the vapor deposition mask 20 is positioned on the crucible 94 holding the vapor deposition material 98, and the second surface of the vapor deposition mask 20. 20b faces the glass substrate 92. FIG. 5 shows a glass substrate 92 by a two-dot chain line for convenience. Therefore, the vapor deposition material 98 adheres to the glass substrate 92 through the first concave portion 30 having a gradually decreasing cross-sectional area. In FIG. 5 showing a cross section taken along line VV in FIG. 4, the vapor deposition material 98 not only moves along the normal direction of the glass substrate 92 from the crucible 94 to the glass substrate 92, but also moves along the normal line of the glass substrate 92. It may move in a direction greatly inclined with respect to the direction. At this time, if the ridge line 33 formed by the leading edge 32 of the first concave portion 30 described later reaches the resist pattern 65a over the entire length, the evaporation material 98 that moves obliquely adheres to the evaporation mask 20 and reaches the glass substrate 92. do not do. In addition, in a region on the glass substrate 92 facing the through hole 25, there are a region where the deposition material 98 easily reaches and a portion where the deposition material 98 does not easily reach.

That is, in order to increase the utilization efficiency of the deposition material (film formation efficiency: the ratio of adhering to the glass substrate 92) and save the expensive deposition material, the film formation using the expensive deposition material is stabilized in a desired region. 5 and 6, which are orthogonal to the sheet surface of the vapor deposition mask 20, the connecting portion 41 having the minimum cross-sectional area of the through hole 25, and the ridge line 33 of the first concave portion 30. It is advantageous that the minimum angle θ ₁ (see FIG. 5) formed by the straight line L1 passing through the lowest part with respect to the normal direction of the evaporation mask 20 is sufficiently large. Then, according to the illustrated example, the angle θ ₁ can be significantly reduced by the merging of the wall surfaces 31 of the two adjacent first concave portions 30.

  The first recess 30 is formed by etching the first surface 21a of the metal plate 21, as described later in detail. Generally, the wall surface of the concave portion formed by the etching has a curved surface convex toward the erosion direction. Therefore, the wall surface 31 of the concave portion formed by the etching is cut in the region on the etching start side, and in the region on the opposite side to the etching start side, that is, in the deepest side of the concave portion, the method of forming the metal plate 21 is performed. The inclination becomes relatively large with respect to the line direction. In the illustrated deposition mask 20, the wall surfaces 31 of the two adjacent first concave portions 30 merge on the etching start side, and form a ridge line (also referred to as a merge portion) 33 formed by the leading edge. In addition, the wall surface 31 of the first concave portion 30, which forms the majority of the through hole 25, can be effectively inclined with respect to the normal direction of the deposition mask. As a result, when the vapor deposition mask 20 described here is used, vapor deposition in a desired pattern can be stably performed with high accuracy while effectively improving the utilization efficiency of the vapor deposition material 98.

  In particular, in the illustrated example, the leading edges 32 of the wall surfaces 31 of all the first recesses 30 of the perforated region 22 are located on the periphery of the first recess 30 except for the top 33a. It merges with the leading edge 32 of the wall surface 31 of the concave portion 30 to form a ridgeline (converging portion) 33. Alternatively, in a part of the entire circumference, except for the top part 33a, it merges with the leading edge 32 of the wall surface 31 of any other first concave part 30 located around the first concave part 30, and The other portion extends into the surrounding region 23. As shown in FIGS. 4 to 6, a part of the leading edge 32 of the wall surface 31 of the first concave portion 30 defining the outermost through hole 25 among the through holes 25 arranged in a predetermined pattern Is connected to the leading edge 32 of the wall surface 31 of the other first concave portion 30 except for the top portion 33a, and the other portion of the leading edge 32 of the wall surface 31 extends to the peripheral region 23 to extend the flat surface of the vapor deposition mask 20. According to a manufacturing method to be described later, it is connected to the first surface 21a of the metal plate 21. On the other hand, regarding the first concave portion 30 that defines the through-hole 25 located at a position other than the outermost one of the through-holes 25 arranged in a predetermined pattern, the leading edge 32 of the wall surface 31 except for the top portion 33a has the It merges with the leading edge 32 of the wall surface 31 of any other first recess 30 located around the one recess 30.

  That is, in the example shown in FIGS. 3 to 6, in the entire region within the perforated region 22 of the evaporation mask 20, the first surface 20 a of the evaporation mask 20 is located on one side in the normal direction of the evaporation mask. It is formed by the wall surface 31 of the first concave portion 30 facing. As a result, the first surface 20a of the vapor deposition mask 20 has an uneven surface in the entire region within the perforated region 22 of the vapor deposition mask 20.

According to such a deposition mask 20, the entire area of the perforated region 22, it is possible to increase the inclination angle theta ₁ which the wall 31 of the first recess 30 with respect to the normal direction of the evaporation mask effectively. Thus, it is possible to stably perform the deposition in a desired pattern with high accuracy while effectively improving the utilization efficiency of the deposition material 98.

  When the metal plate 21 is etched from the first surface 21a side of the metal plate 21 corresponding to the first surface 20a of the vapor deposition mask 20 to form the first concave portion 30 as in a manufacturing method described later, the vapor deposition mask 20 In the entire region of the metal plate 21 forming the perforated region 22, the first surface 21a of the metal plate 21 is eroded by etching. In this case, the thickness of the top portion 33a located in the center of the four through holes 25 formed in the perforated region 22 and forming the lattice shape is the same as the thickness Ta of the metal plate 21 before etching. The thickness Ta of the top portion 33a matches the thickness of the peripheral region 23.

  By making the thickness of the top 33a of the perforated region 22 equal to the thickness Ta of the metal plate 21 before etching, the four first recesses 30 surrounding the top 33a and the through holes 25 in each first recess 30 are formed. The cross-sectional shape can be maintained substantially constant.

  That is, when the thickness of each of the tops 33a varies, the cross-sectional shapes of the four first recesses 30 surrounding the top 33a and the through holes 25 in each of the first recesses 30 may be variously changed.

  On the other hand, according to the present embodiment, by making the thickness of the top 33a equal to the thickness Ta, the cross-sectional shape of the first recess 30 and the through-hole 25 can be determined with reference to the top 33a. The cross-sectional shapes of the first concave portion 30 and the through-hole 25 can be set substantially constant.

  Further, the width of the first concave portion 30 increases from the other side along the normal direction of the evaporation mask toward one side, so that the width of the first concave portion 30 is different from that of the front edge 32 of the wall surface 31 of the first concave portion 30. Of the wall surface 31 of the first concave portion 30 to form a ridge line 33 as a merging portion. In the illustrated example, the through holes 25 are formed in a substantially rectangular shape in a plan view, and are arranged at a predetermined same pitch in each of two directions orthogonal to each other. Therefore, as shown in FIG. 5, the leading edge 32 of the wall surface 31 of the first concave portion 30 that defines the through hole 25 in the perforated region 22 extends along a substantially rectangular shape. The ridge lines 33 extending between the concave portions 30 extend in two directions parallel to the arrangement direction of the through holes 25, respectively. Here, the direction of each side of the substantially rectangular through hole 25 is the same as or parallel to the arrangement direction of the through hole 25. The direction of each side of the through hole 25 is the same or parallel to the direction in which the ridgeline 33 extends.

  Furthermore, since the first concave portion 30 is formed by etching as in a manufacturing method described later, the height of the ridge line (converging portion) 33, that is, the position of the ridge line 33 in the normal direction of the deposition mask is not constant. fluctuate. In other words, the position of the leading edge 32 of the wall surface 31 of the first recess 30 that merges with the leading edge 32 of the wall surface 31 of the other first recess 30 is not constant but fluctuates. As described above, the plurality of first concave portions 30 of the vapor deposition mask 20 are arranged in a lattice shape, and the top portion 33a is located at the center of the four first concave portions 30 forming the lattice shape. Therefore, between the adjacent top portions 33a. The ridge line 33 extends, and the height of the ridge line 33 is highest near the top 33a, and the height of the ridge 33 gradually decreases as the distance from the top 33a increases. Then, at the center position between the tops 33a, the height of the ridge line 33 becomes the lowest (see FIGS. 3 to 6).

In such a vapor deposition mask 20, the height of the ridge line 33 between the wall surfaces 31 of the first concave portion 30 is the lowest at the central position between the top portions 33a, as can be clearly understood from FIG. the above-mentioned angle theta ₁ formed by the wall 31 with respect to the normal direction of the evaporation mask 20 in this position, it is possible to effectively increase. Thereby, the utilization efficiency of the deposition material 98 can be more effectively improved, and deposition with a desired pattern can be performed with high accuracy and stability.

Further, in the illustrated example, due to a manufacturing method described later, a ridge line (merge) at which the leading edges 32 of the wall surfaces 31 of the two first recesses 30 merge in a cross section along the normal direction of the evaporation mask. The outer contour of the portion 33 has a chamfered shape. As described above, in general, the wall surface of the first concave portion 30 formed by etching has a curved surface convex toward the main traveling direction by etching. Therefore, when the two first concave portions 30 formed by etching are simply partially overlapped with each other, the merged portion is sharpened toward one side along the normal direction of the deposition mask which is the etching start side. Shape. On the other hand, in the vapor deposition mask 20 according to the present embodiment, a sharp portion in the merging portion 33 is chamfered. As understood from FIGS. 4-6, this chamfered, the above-mentioned angle theta ₁ formed by the wall 31 with respect to the normal direction of the evaporation mask 20, can be effectively increased. Thereby, the utilization efficiency of the deposition material 98 can be more effectively improved, and deposition with a desired pattern can be performed with high accuracy and stability.

  As described above, in the present embodiment, the through holes 25 are arranged in a predetermined pattern in each perforated region 22. As an example, when the vapor deposition mask 20 (the vapor deposition mask device 10) is used for producing a display (about 2 to 5 inches) such as a mobile phone or a digital camera, the arrangement pitch P of the through holes 25 is 58 μm (440 ppi). It can be about 254 μm (100 ppi) or less. In order to perform color display, the evaporation mask 20 (the evaporation mask device 10) and the glass substrate 92 are relatively moved little by little along the arrangement direction of the through-holes 25 (the above-described one direction), so that the red An organic light emitting material, an organic light emitting material for green, and an organic light emitting material for blue may be sequentially deposited. When the evaporation mask 20 (evaporation mask device 10) is used for manufacturing a display of a mobile phone, the width (slit width) W of each through-hole 25 in the arrangement direction (one direction described above) is 28 μm. The thickness can be about 84 μm or less.

  Note that the frame 15 of the vapor deposition mask device 10 is attached to a peripheral portion of a rectangular vapor deposition mask 20. The frame 15 holds the vapor deposition mask 20 in one direction or in both directions, one direction and the other direction perpendicular thereto, so that the vapor deposition mask 20 is not bent. The deposition mask 20 and the frame 15 are fixed to each other by, for example, spot welding.

  Incidentally, as shown in FIGS. 3A and 3B, a portion of the first surface 21 a of the metal plate 21, which is optional at the center of any four adjacent through-holes 25 forming a lattice shape, is a top 33 a. The thickness of the top portion 33a maintains the thickness of the metal plate 21 before etching. Conversely, any four adjacent top portions 33a are connected to each other by four ridge lines 33 to form a lattice shape.

  In FIG. 3B, one direction (the left-right direction in FIG. 3B) of the vapor deposition mask 20 is a pulling direction L in which it is pulled when being fixed to the frame 15 during use. As shown in FIG. 3B, four adjacent top portions 33 a are connected by four ridge lines 33 and surround the first concave portion 30 and the second concave portion 35 having the through hole 25. Of the four ridge lines 33, two ridge lines forming the upper side and the lower side extend in parallel with the tension direction L, and the other two ridge lines forming the side sides are orthogonal to the tension direction L.

  As described above, since all four ridge lines 33 surrounding the first concave portion 30 and the second concave portion 35 extend parallel to or perpendicular to the tensile direction L, for example, the vapor deposition mask 20 is moved along the tensile direction L. When pulled, the pulling force can be supported by the ridge lines 33 surrounding the first concave portion 30 and the second concave portion 35, in particular, the two ridge lines 33 forming the upper side and the lower side, so that the through hole 25 is deformed. Never.

  That is, when the above-described four ridge lines 33 are inclined with respect to the tensile direction L, when the vapor deposition mask 20 is pulled along the tensile direction L, the tensile force cannot be sufficiently supported by the ridge lines 33, Although it is conceivable that the through hole 25 is deformed, according to the present embodiment, the tensile force can be supported by the four ridge lines 33, particularly, the two ridge lines 33 forming the upper side and the lower side. 25 is not deformed.

  The vapor deposition mask device 10 having the vapor deposition mask 20 attached to the frame 15 in this manner is held inside the vapor deposition device 90 in a high-temperature atmosphere. Therefore, the vapor deposition mask 20 and the frame 15 are preferably made of the same material having a small coefficient of thermal expansion in order to prevent the vapor deposition frame from bending and generating thermal stress. As such a material, for example, a 36% Ni invar material can be used.

  According to the vapor deposition mask 20 as described above, the leading edge 32 of the wall surface 31 of at least one of the first recesses 30 is any other first recess located around the first recess 30 except for the top 33a. It merges with the wall surface 31 of 30. For this reason, it is possible to perform the deposition in a high-definition pattern with a desired thickness with high accuracy while effectively improving the utilization efficiency of the deposition material 98. In particular, in an organic EL display device, it is desired that an expensive vapor deposition material 98 be patterned on the substrate 42 with a high-definition pattern. For this reason, the vapor deposition mask 20 of the present embodiment is particularly suitable for a vapor deposition mask used for manufacturing an organic EL display device.

  Next, a method for manufacturing such a deposition mask 20 will be described mainly with reference to FIGS. In the method of manufacturing the evaporation mask 20 described below, as shown in FIG. 7, a long metal plate 64 extending in a belt shape is supplied, the through-hole 25 is formed in the long metal plate 64, and the long metal plate 64 is further formed. By cutting the plate 64, the deposition mask 20 including the sheet-like metal plate 21 is obtained.

  More specifically, the method of manufacturing the deposition mask 20 includes a step of supplying a long metal plate 64 extending in a belt shape, and performing etching using a photolithography technique on the long metal plate 64 to form a long metal plate. A step of forming the first concave portion 30 from the side of the first surface 64a on the plate 64, and performing etching using a photolithography technique on the long metal plate 64, so that the long metal plate 64 is formed on the long metal plate 64 from the second surface 64b side. Forming the second concave portion 35. Then, the first recess 30 and the second recess 35 formed in the long metal plate 64 communicate with each other, so that the through-hole 25 is formed in the long metal plate 64. In the example shown in FIG. 7, the step of forming the second recess 35 is performed before the step of forming the first recess 30, and between the step of forming the second recess 35 and the step of forming the first recess 30. Further, a step of sealing the produced second concave portion 35 is further provided. Hereinafter, details of each step will be described.

  FIG. 7 shows a manufacturing apparatus 60 for manufacturing the evaporation mask 20. As shown in FIG. 7, first, a roll 62 in which a long metal plate 64 is wound around a supply core 61 is prepared. Then, when the supply core 61 rotates and the winding body 62 is unwound, a long metal plate 64 extending in a belt shape is supplied as shown in FIG. In addition, the long metal plate 64 is formed with the through-hole 25 and forms the sheet-shaped metal plate 21 and further forms the vapor deposition mask 20. Therefore, as described above, the long metal plate 64 is made of, for example, 36% Ni invar material. However, the present invention is not limited to this, and a sheet made of stainless steel, copper, iron, or aluminum can be used as the long metal plate 64.

  The supplied long metal plate 64 is transported to the etching device (etching means) 70 by the transport roller 72. Each process shown in FIGS. 8 to 14 is performed by the etching means 70. First, as shown in FIG. 8, a first resist pattern (also simply referred to as a resist pattern) 65a is formed on a first surface 64a of a long metal plate 64, and a second surface 64b of the long metal plate 64 is formed. A second resist pattern 65b is formed thereon. As a specific example, a negative resist pattern is formed as follows. First, a photosensitive resist material is applied on the first surface 64a (on the lower surface in FIG. 8) and the second surface 64b of the long metal plate 64, and a resist film is formed on the long metal plate 64. Form. Next, a glass dry plate is prepared so as not to transmit light to a region of the resist film to be removed, and the glass dry plate is arranged on the resist film. Thereafter, the resist film is exposed through a glass dry plate, and the resist film is further developed. As described above, the first resist pattern (also simply referred to as a resist pattern) 65a is formed on the first surface 64a of the long metal plate 64, and the second resist pattern is formed on the second surface 64b of the long metal plate 64. The pattern 65b can be formed.

  Next, as shown in FIG. 9, using the resist pattern 65 b formed on the long metal plate 64 as a mask, an etching solution (for example, a ferric chloride solution) is used to form the second surface of the long metal plate 64. Etch from the 64b side. For example, an etching solution is sprayed from a nozzle disposed on the side facing the second surface 64b of the long metal plate 64 being conveyed toward the second surface 64b of the long metal plate 64 over the resist pattern 65b. You. As a result, as shown in FIG. 9, erosion by the etching solution proceeds in a region of the long metal plate 64 not covered by the resist pattern 65b. As described above, a large number of second concave portions 35 are formed in the long metal plate 64 from the side of the second surface 64b.

  Thereafter, as shown in FIG. 10, the formed second recess 35 is covered with a resin 69 having resistance to an etching solution. That is, the second concave portion 35 is sealed by the resin 69 having resistance to the etching solution. In the example shown in FIG. 10, the film of the resin 69 is formed so as to cover not only the formed second concave portion 35 but also the second resist pattern 65b.

  Next, as shown in FIG. 11, a second etching is performed on the long metal plate 64 using the first resist pattern 65a as a mask. In the second etching, the long metal plate 64 is etched only from the first surface 64a side, and the formation of the first recess 30 proceeds from the first surface 64a side. At this time, the resin 69 having resistance to the etching solution is coated on the side of the second surface 64b of the long metal plate 64. For this reason, the shape of the second concave portion 35 formed into a desired shape by the first etching is not damaged.

  Erosion due to etching is performed in a portion of the long metal plate 64 that is in contact with the etching solution. Therefore, the erosion proceeds not only in the normal direction (thickness direction) of the long metal plate 64 but also in the direction along the plate surface of the long metal plate 64. As a result, as shown in FIG. 12, the etching proceeds in the normal direction of the long metal plate 64 to not only connect the first recess 30 to the second recess 35, but also to form two adjacent holes 66a of the resist pattern 65a. The two first concave portions 30 formed at positions facing each other merge at the back side of the bridge portion 67a located between the two holes 66a.

  As shown in FIG. 13, the etching from the side of the first surface 64a of the long metal plate 64 further proceeds. As shown in FIG. 13, a merging portion 33 in which two adjacent first concave portions 30 merge to form a ridge line is separated from the first resist pattern 65a, and the merging portion 33 below the resist pattern 65a is etched by etching. Erosion also proceeds in the normal direction (thickness direction) of the metal plate 64. As a result, as shown in FIG. 12, the merging portion 33 which is pointed toward one side along the normal direction of the deposition mask is etched from one side along the normal direction of the deposition mask, and FIG. Chamfered as shown.

Further, as described above, the wall surface of the concave portion formed by etching is generally directed toward the erosion direction, and in this example, from one side to the other side along the normal direction of the deposition mask. It becomes a convex curved surface. For this reason, the wall surface of the first concave portion 30 stands up on the side of the first surface 64 a of the long metal plate 64. However, when the two adjacent first concave portions 30 merge, the steep wall surface 31 is conveniently removed. Thus, it is possible to wall 31 of the first recess 30 increases the inclination angle theta ₁ which forms with the normal direction of the deposition mask.

  In this manner, the leading edge 32 of the wall surface 31 of the at least one first concave portion 30 formed in the perforated region 22 is located on the periphery of the one first concave portion 30 except for the top portion 33a. It joins with the wall surface 31 of the first concave portion 30. In particular, in the illustrated example, as shown in FIG. 3, the leading edge 32 of the wall surface 31 of the first concave portion 30 is located on the periphery of the first concave portion 30 except for the top portion 33a. Merges with the wall surface 31 of the concave portion 30, or merges with the wall surface 31 of any other first concave portion 30 located around the first concave portion 30 except for the top portion 33a in a part of the entire circumference thereof, and The other portion of the entire circumference extends into the region forming the peripheral region 23 and is connected to the first surface 64a of the metal plate 64.

  By such an etching process, as shown in FIG. 13, the leading edge 32 of the wall surface 31 of the first concave portion 30 has a portion other than the top portion 33 a around any other first concave portion located around the first concave portion 30. It merges with the wall surface 31 of the recess 30 to form a merging portion (ridge line) 33. The junction 33 is formed on the back surface of the bridge 67a of the first resist pattern 65a. Also, during this etching process, of the first surface 64a of the long metal plate 64, the top 33a located at the center of the four through holes 25 forming the lattice shape contacts the region 69a of the first resist pattern 65a, It will not be etched.

  Therefore, the thickness of the top 33a of the long metal plate 64 maintains the thickness Ta of the long metal plate 64, and the thickness of the top 33a matches the thickness of the peripheral region 22.

  The etching process shown in FIGS. 11 to 13 is a half etching process performed on the long metal plate 64 from the first surface 64a side. This half etching process does not completely penetrate the long metal plate 64, and the first recess 30 formed from the first surface 64a side by the half etching process does not reach the second surface 64b.

  The top portion 33a thus formed in the perforated region 22 is always in contact with the first resist pattern 65a during the etching process, and is not etched. Therefore, the thickness of the top portion 33a of the perforated region 22 can be made equal to the thickness of the long metal plate 64. In this case, since the cross-sectional shape of the first concave portion 30 surrounding the top portion 33a is determined by the cross-sectional shape of the top portion 33a, the thickness and the cross-sectional shape of the top portion 33a are fixed so that the cross-sectional shape of the first concave portion 30 is substantially uniform. It can be set to a certain shape.

  Further, by making the thickness of the top portion 33a of the perforated region 22 equal to the thickness of the long metal plate 64 before etching, the subsequent processing described later, for example, transportation and cutting of the metal plate 64, removal of the resin 69, the frame 15 During processing such as attachment to the perforated region, it is possible to effectively prevent deformation of the perforated region 22 in which a large number of through holes 25 are formed. Further, since all four ridge lines 33 surrounding the first concave portion 30 and the second concave portion 35 extend in parallel with or perpendicular to the tensile direction L, the vapor deposition mask 20 is moved along the tensile direction L. Even in the case of pulling, this pulling force can be supported by the ridge line 33, and the deformation of the effective area 22 in which a large number of through holes 25 are formed can be effectively prevented.

  As described above, the etching (half etching) from the first surface 64a side of the long metal plate 64 advances by a predetermined amount, and the second etching on the long metal plate 64 is completed. At this time, the first recess 30 extends along the thickness direction of the long metal plate 64 to a position where the first recess 30 reaches the second recess 35, whereby the first recess 30 and the second recess 35 communicating with each other are formed. Thereby, the through hole 25 is formed in the long metal plate 64.

  Thereafter, the resin 69 is removed from the long metal plate 64 as shown in FIG. The resin film 69 can be removed with, for example, an alkaline release agent.

  Next, the first resist pattern 65a and the second resist pattern 65b are removed from the long metal plate 64. In the step of forming the first recess 30, the erosion of the first surface 64 a by etching proceeds in the entire area of the metal plate 64 forming the perforated area 22. Therefore, the resist pattern 65a provided on the first surface 64a is already separated from the metal plate 64 in the region of the metal plate 64 forming the perforated region 22, except for the top portion 33a that is in contact with the region 69a. Therefore, when the resist pattern 65a is removed, it is not necessary to perform a treatment such as brushing on the metal plate 21, and damage such as deformation of the perforated region 22 of the vapor deposition mask 20 can be effectively avoided. The yield can be effectively improved.

  The long metal plate 64 in which the large number of through holes 25 are formed is transported to the cutting device (cutting means) 73 by the transport rollers 72 rotating while holding the long metal plate 64. Is done. In addition, the rotation of the transport rollers 72, 72 exerts a tension (tensile force) on the long metal plate 64 to rotate the above-described supply core 61 and supply the long metal plate 64 from the winding body 62. It has become. Since the four ridge lines 33 surrounding the first concave portion 30 and the second concave portion 35 all extend parallel to or perpendicular to the tensile direction L, the vapor deposition mask 20 is moved along the tensile direction L. Even in the case of pulling, this pulling force can be supported by the ridge line 33, and the deformation of the effective area 22 in which a large number of through holes 25 are formed can be effectively prevented.

  Thereafter, the long metal plate 64 in which the first and second concave portions 30 and 35 are formed is cut into a predetermined length by a cutting device (cutting means) 73, whereby a large number of through holes 25 are formed. A sheet-like metal plate 21 is obtained.

  In addition, the through-hole 25 can also be formed by etching the long metal plate 64 from only one surface. However, when the long metal plate 64 is etched only from the upper surface, an etchant that has already been used for erosion and has a low erosion ability remains in the tapered hole formed by the erosion. After that, when the hole of the metal plate reaches the lower surface, the etching solution remaining in the hole flows out from the lower surface and enters the hole where the fresh etching solution with high erosion ability was formed. Flow in. At this time, the lower region in the hole is severely eroded by the fresh etching solution. That is, the shape of the hole cannot be sufficiently controlled. On the other hand, when the metal plate is etched only from the lower surface via the resist pattern, if the tapered hole formed by the erosion penetrates the metal plate, the etchant may remain around the hole on the upper surface. As a result, the erosion proceeds from the upper surface of the metal plate due to the remaining etching liquid, and the shape of the hole cannot be sufficiently controlled. On the other hand, according to the above-described etching method, the shape of the through-hole 25 can be stabilized.

  As described above, the vapor deposition mask 20 including the metal plate 21 having the large number of through holes 25 is obtained. Then, by attaching the frame 15 to each of the vapor deposition masks 20, the vapor deposition mask device 10 is obtained. Note that the frame 15 may be attached to one surface 20a of the evaporation mask 20 or may be attached to the other surface 20b of the evaporation mask 20.

  According to the manufacturing method of the vapor deposition mask device according to the present embodiment as described above, in the step of forming the first concave portion 30 in the metal plates 21 and 64, the erosion due to the etching also occurs in the direction along the plate surface of the metal plate. Proceeding, two adjacent first concave portions 30 merge under the resist pattern 65a, and further, the leading edge 32 of the wall surface 31 of at least one first concave portion 30 becomes the one first concave portion 30 except for the top portion 33a. Merges with the wall surface 31 of any other first concave portion 30 located around the first concave portion 30. The wall surface 31 of the first recess 30 formed as described above and forming the through hole 25 is greatly inclined with respect to the normal direction of the deposition mask 20. Accordingly, by using the manufactured evaporation mask 20, it is possible to stably perform evaporation in a high-definition pattern while using the evaporation material 98 with high utilization efficiency.

  Further, the top 33a formed in the perforated region 22 is always in contact with the first resist pattern 65a during the above-mentioned etching process, and is not etched. Therefore, the thickness of the top portion 33a of the perforated region 22 can be made equal to the thickness of the metal plates 21, 64 or the peripheral region 23. In this case, since the cross-sectional shape of the first concave portion 30 surrounding the top portion 33a is determined by the cross-sectional shape of the top portion 33a, the thickness and the cross-sectional shape of the top portion 33a are fixed so that the cross-sectional shape of the first concave portion 30 is substantially uniform. The shape can be determined to be constant, and the shape of the through-hole 25 formed in the first concave portion 30 can be determined accurately.

  Note that various changes can be made to the above-described embodiment. Hereinafter, an example of a modification will be described with reference to the drawings. In the drawings used in the following description, the same reference numerals are used as those used for corresponding parts in the above-described embodiment, and redundant description will be omitted.

  First, as a first modification, the method of forming the through holes 25 in the long metal plate 64 can be changed. In the above-described embodiment, the step of forming the second recess 35 is performed before the step of forming the first recess 30. However, the present invention is not limited to this. May be performed before the step of forming the second recess 35, or the metal plates 21, 64 may be simultaneously etched from the first surfaces 21a, 64a and the second surfaces 21b, 64b. The step of forming the first recess 30 and the step of forming the second recess 35 may be performed in parallel. Since the amount of erosion of the long metal plate 64 by the etching when forming the first recess 30 is greater than the amount of erosion of the long metal plate 64 by the etching when forming the second recess 35, FIG. As shown in FIG. 7, the metal plates 21 and 64 are simultaneously etched from both sides of the first surfaces 21a and 64a and the second surfaces 21b and 64b via the first resist pattern 65a and the second resist pattern 65b, and the first recess 30 is formed. The step of forming and the step of forming the second recess 35 may be performed in parallel, and thereafter, only the step of forming the first recess 30 may be continuously performed.

  In the above-described embodiment, the first resist pattern 65a is formed on the first surface 64a of the long metal plate 64, and the second resist pattern 65b is formed on the second surface 64b of the long metal plate 64. Both have been performed before the formation of the first recess 30 and the second recess 35, but are not limited to this. For example, one of the first and second resist patterns 65a and 65b may be formed to form one hole, and then the other resist pattern may be formed to form the other hole.

  Next, a second modified example will be described. In the above-described embodiment, an example in which the second concave portion 35 is formed by etching has been described, but the present invention is not limited to this. As shown in FIG. 17, first, the first concave portion 30 is formed by etching from the side of the first surfaces 21a and 64a of the metal plates 21 and 64 via the first resist pattern 65a, and then as shown in FIG. Then, by irradiating the first recess 30 with laser light using a laser irradiator 80, the second recess 35 reaching the second surfaces 21b and 64b of the metal plates 21 and 64 from the inside of the first recess 30 is formed. It may be formed.

  As shown in FIG. 17, the first concave portion 30 is formed by half-etching the metal plates 21, 64 from the first surfaces 21a, 64a using the first resist pattern 65a.

At this time, as in the above-described embodiment, the metal plates 21 and 64 are etched from the side of the first surfaces 21a and 64a, and the two adjacent first concave portions 30 merge, and further, at least one first concave portion 30 is formed. If the wall surface 31 of the concave portion 30 merges with the wall surface 31 of any other first concave portion 30 located around the one first concave portion 30 except for the top portion 33a, the above-described embodiment will be described. Similar functions and effects can be obtained. In FIG. 17, the top 33a is always in contact with the first resist pattern 65a during the half etching.

  In addition, as shown in FIG. 18, when the laser light is irradiated from the half-etched first surface (64a) side, the energy density of the light flux of the laser light is generally higher at the center and lower at the outer periphery. Due to the nature, the second concave portion 35 formed by the irradiation of the laser beam becomes narrower from one side along the normal direction of the deposition mask 20 to the other side similarly to the first concave portion 30. In other words, the cross-sectional area can be made smaller.

According to the vapor deposition mask 20 formed in this manner, the through-holes 25 taper from the first surface 20a side of the vapor deposition mask 20 toward the second surface 20b as a whole. The peripheral edge of the deposited film can be made clear while improving the utilization efficiency.

  Next, a third modified example will be described. In the above-described embodiment, an example in which the vapor deposition mask 20 is formed by forming the through holes 25 in the metal plates 21 and 64 has been described, but the present invention is not limited to this.

As shown in FIG. 19, the metal plate 21 (64) and the resin layer 50 laminated on the metal plate 21 (64) are etched from the side of the metal plate 21 (64) of the laminate 51 so that the metal plate 21 (64) is etched. The first concave portion 30 penetrating through the (64) and reaching the resin layer 50 is formed, and then the first concave portion 30 is irradiated with laser light using a laser irradiator 80 to penetrate the resin layer 50. Alternatively, the second mask 35 may be formed by forming the second concave portion 35.

  As shown in FIG. 19, the first recess 30 is formed by etching the metal plates 21 and 64 using the first resist pattern 65a. At this time, as in the above-described embodiment, the metal plates 21 and 64 are etched, two adjacent first concave portions 30 merge, and the wall surface 31 of at least one of the first concave portions 30 becomes the top portion 33a. If it is made to merge with the wall surface 31 of any other first concave portion 30 located around the one first concave portion 30 except for the above, the same operation and effect as the above-described embodiment can be obtained. . In FIG. 19, the top 33a is always in contact with the first resist pattern 65a during the etching.

  In addition, as shown in FIG. 20, the second concave portion 35 formed by the irradiation of the laser beam is, like the first concave portion 30, from one side along the normal direction of the multilayer mask 20B to the other side. Toward this point, the width can be reduced, in other words, the cross-sectional area can be reduced. According to the laminated mask 20B formed in this way, the through holes 25 taper from the first surface 20a side to the second surface 20b side of the laminated mask 20B as a whole. The peripheral edge of the deposited film can be made clear while improving the utilization efficiency.

  As still another modified example, in the above-described embodiment, when a plurality of through holes 25 arranged along each of two different arrangement directions are formed, one through hole 25 is provided for one through hole 25. Although an example in which one concave portion 30 and one second concave portion 35 are formed has been described, the present invention is not limited to this. For example, an elongated first concave portion 30 extending in one of the arrangement directions of the through holes 25 is formed, and a plurality of second concave portions 35 are formed at positions facing the elongated first concave portion 30. Good. Also in such an example, two adjacent first recesses 30 merge, and the wall surface 31 of at least one first recess 30 is located around the one first recess 30 except for the top 33a. If it merges with the wall surface 31 of any of the other first concave portions 30, the same operation and effect as the above-described embodiment can be obtained.

  As still another modified example, in the above-described embodiment, after forming the through-hole 25 in the long metal plate 64, the long metal plate 64 is cut into the single-leaf metal plate 21 by the cutting device 73. Although shown, it is not limited to this. For example, when manufacturing the second concave portion 35 by irradiating a laser beam as in the above-described modified example, first, the first concave portion 30 is formed in the long metal plate 64 (the long laminated body 51), Next, the long metal plate 64 (the long laminated body 51) is cut into the sheet-shaped metal plate 21 (the sheet-shaped laminated body 51) by the cutting device 73, and thereafter, the sheet-shaped metal plate 21 (the sheet-shaped laminated body 51) is cut. The second concave portion 35 may be formed in the laminate 51).

  Although several modifications to the above-described embodiment have been described above, it is needless to say that a plurality of modifications can be appropriately combined and applied.

Reference Signs List 20 evaporation mask 20A evaporation mask with resist pattern 20B lamination mask 20a first surface 20b of evaporation mask second surface 21 of evaporation mask first surface 21a of metal plate 21b second surface of metal plate 22 perforated region 23 peripheral region 25 through-hole 30 first concave portion 31 wall surface 32 leading edge 33 confluence (ridgeline)
33a Top 35 Second recess 36 Wall 64 Long metal plate 64a First surface 64b of long metal plate Second surface 65a of long metal plate First resist pattern 66a Hole 67a Bridge portion

Claims (10)

A perforated region including a plurality of through holes arranged in a lattice shape, and a peripheral region located around the perforated region, and a deposition mask used in a state of being pulled in at least one direction is manufactured. In the method,
Providing a resist pattern on a first surface of a metal plate having a first surface and a second surface facing each other;
Etching the metal plate from the first surface side using the resist pattern as a mask, and forming a concave portion having the through hole from the first surface side in a region of the metal plate forming the perforated region; With
In the step of forming the concave portion, of the first surface of the metal plate, a top located at the center of any four adjacent through holes forming a lattice shape is maintained in contact with the resist pattern. Forming recesses, each recess being surrounded by four rectangular ridges connecting between any four adjacent vertices forming a lattice shape;
The through hole includes sides extending in two directions that are parallel to the arrangement direction of the through holes, respectively.
A method for manufacturing a vapor deposition mask, wherein each ridge line descends from one top to the inside in the thickness direction of the metal plate, and then rises toward the other top outward in the thickness direction of the metal plate.   2. The method according to claim 1, wherein, in the step of forming the concave portion, the metal plate is half-etched, and the concave portion does not reach the second surface.   In the step of forming the concave portion, erosion due to etching also proceeds in a direction along the plate surface of the metal plate, two adjacent concave portions merge under the resist pattern, and further, the wall surface of at least one concave portion, The method according to claim 1 or 2, wherein the flow is merged with a wall surface of one of the other concave portions located around the one concave portion.   In the step of forming the concave portion, a merging portion formed by merging the two adjacent concave portions is separated from the resist pattern, and in the merging portion below the resist pattern, erosion due to etching is caused in a normal direction of the metal plate. The method according to claim 1, wherein the junction is chamfered, and the thickness of the junction is smaller than the thickness of the top. Etching the metal plate from the second surface side using a second resist pattern disposed on the second surface of the metal plate as a mask, and forming a second recess from the second surface side; In addition,
The method according to claim 1, wherein the concave portion and the second concave portion are formed such that the concave portion and the second concave portion are connected to form the through hole. Method. A laser beam is applied to each of the recesses formed from the side of the first surface so as not to penetrate the metal plate to form a second recess reaching from the inside of the recess to the second surface of the metal plate. Further comprising the step of:
The method according to claim 1, wherein the concave portion and the second concave portion are formed such that the concave portion and the second concave portion are connected to form the through hole. Method. A vapor deposition mask comprising a metal plate having a first surface and a second surface facing each other and used in a state of being pulled in at least one direction,
A perforated region including a plurality of through holes arranged in a lattice shape,
A peripheral area located around the perforated area,
In the perforated region, a plurality of recesses whose width increases toward the first surface are provided on a first surface of the metal plate, and a through hole is formed in the recess, and The thickness of the top located at the center of any four adjacent through-holes forming the lattice shape is equal to the thickness of the peripheral region, and each recess is formed between any four adjacent tops forming the lattice shape. Surrounded by four rectangular ridges that connect,
The through hole includes sides extending in two directions that are parallel to the arrangement direction of the through holes, respectively.
A vapor deposition mask wherein each ridgeline descends from one top to the inside in the thickness direction of the metal plate, and then rises toward the other top outward in the thickness direction of the metal plate.   8. The deposition mask according to claim 7, wherein the recess does not reach the second surface.   A merging portion is formed by merging a wall surface of the concave portion and a wall surface of the other concave portion, and a thickness of the merging portion along a normal direction of the vapor deposition mask is smaller than a thickness of a top portion. Item 7. An evaporation mask according to Item 7 or 8.   The vapor deposition according to any one of claims 7 to 9, wherein a second recess connected to the recess and forming a through hole is formed at a position corresponding to the recess on the second surface of the metal plate. mask.

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