KR102399595B1 - Metal substrate and mask using the same - Google Patents

Abstract

The metal plate for manufacturing a deposition mask according to the embodiment has a thickness of 30 μm or less, and includes an iron (Fe)-nickel (Ni) alloy metal material containing oxygen (O) and chromium (Cr), and the metal material is the chromium. The atomic concentration of (Cr) is invar of 0.03 at% or less, the metal material includes an outer portion including a surface and an inner portion other than the outer portion, wherein the outer portion is in a depth range of 14 nm or less from the surface In, the maximum atomic concentration of iron (Fe) is 60 at% or less, the maximum atomic concentration of nickel (Ni) is 40 at% to 45 at%, and the minimum atomic concentration of oxygen (O) is 10 at% or less am.
In addition, the deposition mask according to the embodiment includes an iron (Fe)-nickel (Ni) alloy metal material including a deposition region and a non-deposition region other than the deposition region, wherein the deposition region includes a plurality of spaced apart in the longitudinal direction. and an effective portion and an ineffective portion other than the effective portion, wherein the effective portion includes a plurality of small face holes formed on one surface of the metal material, a plurality of face holes formed on the other surface opposite to the one surface, and the small surface a plurality of through-holes communicating with the balls and the face-to-face holes, respectively, and an island portion formed between the adjacent through-holes, wherein the through-hole has a resolution of 400 PPI or more, and the metal material includes iron (Fe), nickel It contains (Ni), oxygen (O) and chromium (Cr), wherein the atomic concentration of chromium (Cr) is invar of 0.03 at% or less, and the metal material includes an external part including a surface and an external part other than the external part. wherein in a depth range of 14 nm or less from the surface of at least one of the non-deposited region, the ineffective portion and the island portion, the maximum atomic concentration of iron (Fe) is 60 at% or less, and the nickel The maximum atomic concentration of (Ni) is 40 at% to 45 at%, and the minimum atomic concentration of oxygen (O) is 10 at% or less.

Description

Metal plate and mask for deposition using the same

The present invention relates to a metal plate capable of preventing corrosion and having uniform physical properties, and a deposition mask using the same.

A display device is applied to and used in various devices. For example, the display device is applied and used not only in small devices such as smart phones and tablet PCs, but also in large devices such as TVs, monitors, and public displays (PDs). In particular, in recent years, the demand for ultra-high resolution UHD (UHD, Ultra High Definition) of 500 PPI (Pixel Per Inch) or more is increasing, and high-resolution display devices are being applied to small devices and large devices. Accordingly, interest in technology for implementing low power and high resolution is increasing.

A generally used display device may be largely divided into a liquid crystal display (LCD) and an organic light emitting diode (OLED) according to a driving method.

The LCD is a display device driven by using liquid crystal, and has a structure in which a light source including a Cold Cathode Fluorescent Lamp (CCFL) or a Light Emitting Diode (LED) is disposed under the liquid crystal, and on the light source It is a display device driven by controlling the amount of light emitted from the light source using the disposed liquid crystal.

In addition, the OLED is a display device driven by using an organic material, and a separate light source is not required, and the organic material itself serves as a light source and can be driven with low power. In addition, OLED is attracting attention as a display device that can replace LCD because it can express infinite contrast ratio, has a response speed of about 1000 times faster than LCD, and has an excellent viewing angle.

In particular, in the OLED, the organic material included in the light emitting layer may be deposited on a substrate by a deposition mask called a fine metal mask (FMM), and the deposited organic material corresponds to a pattern formed on the deposition mask. It may be formed in a pattern to serve as a pixel. In detail, the deposition mask is generally formed of a metal plate, and the metal plate includes a through hole formed at a position corresponding to the pattern of the pixel. At this time, as shown in FIG. 5 , the red, green, and blue organic materials pass through the through hole of the metal plate and are deposited on the substrate, thereby forming a pixel pattern on the substrate. can do.

The deposition mask is generally made of a metal plate made of an iron (Fe)-nickel (Ni) alloy. For example, the deposition mask is made of an Invar alloy. It is advantageous to immediately manufacture a deposition mask from the manufactured metal plate, but there is a reason that it is difficult in reality. For example, since the manufacturing process of the metal plate and the manufacturing process of the deposition mask may be performed in different regions, if it is necessary to transport the metal plate to the region where the deposition mask is manufactured after the metal plate is manufactured, it is exposed to air for a long period of time. may be exposed. Alternatively, even when the metal plates are transferred, it is difficult to simultaneously put all the metal plates in the manufacturing process of the deposition mask. A separate storage method may be considered, but excessively high cost may be expected.

Accordingly, the metal plate may further include chromium (Cr) in addition to iron (Fe) and nickel (Ni) to prevent surface corrosion. Chromium (Cr) is an element that can ensure corrosion resistance, and the metal plate may have improved corrosion resistance by chromium (Cr), but it is difficult to uniformly disperse or distribute chromium (Cr) in the composition for manufacturing the metal plate. There is a problem.

In addition, when the chromium (Cr) is not uniformly dispersed or distributed and is concentrated in a specific part, the physical properties of the metal plate may be changed by promoting segregation and formation of a second precipitated phase in the process of manufacturing the metal plate. Accordingly, there is a problem in that corrosion resistance and workability of the metal plate are lowered, and defects occur when manufacturing a high-resolution deposition mask using the metal plate. Specifically, when a deposition mask is manufactured using the metal plate, there is a problem in that workability of forming grooves on one surface and the other surface of the metal plate is deteriorated due to the above-described problems.

Accordingly, a metal plate capable of solving the above problems and a mask for deposition using the same are required.

The embodiment is intended to provide a metal plate with improved corrosion resistance. In addition, the embodiment provides a deposition mask capable of preventing corrosion in the process of manufacturing the deposition mask by manufacturing the deposition mask with the metal plate having improved corrosion resistance and in the process of forming a pattern using the deposition mask. would like to provide

In addition, the embodiment intends to provide a metal plate and a deposition mask capable of preventing corrosion generated during transport and storage of the metal plate prior to manufacturing the deposition mask. That is, the embodiment intends to provide a metal plate and a deposition mask capable of realizing high resolution by preventing etching non-uniformity that may occur due to corrosion.

In addition, the embodiment aims to provide a metal plate with improved workability and a mask for deposition using the same because it can have a metal plate having uniform physical properties by minimizing the content of chromium (Cr).

The metal plate for manufacturing a deposition mask according to the embodiment has a thickness of 30 μm or less, and includes an iron (Fe)-nickel (Ni) alloy metal material containing oxygen (O) and chromium (Cr), and the metal material is the chromium. invar having an atomic concentration of (Cr) of 0.03 at% or less, wherein the metal material includes an outer portion including a surface and an inner portion other than the outer portion, wherein the outer portion is in a depth range of 14 nm or less from the surface In, the maximum atomic concentration of iron (Fe) is 60 at% or less, the maximum atomic concentration of nickel (Ni) is 40 at% to 45 at%, and the minimum atomic concentration of oxygen (O) is 10 at% or less am.

In addition, the deposition mask according to the embodiment includes an iron (Fe)-nickel (Ni) alloy metal material including a deposition region and a non-deposition region other than the deposition region, wherein the deposition region includes a plurality of spaced apart in the longitudinal direction. and an effective portion and an ineffective portion other than the effective portion, wherein the effective portion includes a plurality of small face holes formed on one surface of the metal material, a plurality of face holes formed on the other surface opposite to the one surface, and the small surface a plurality of through-holes communicating with the balls and the face-to-face holes, respectively, and an island portion formed between the adjacent through-holes, wherein the through-hole has a resolution of 400 PPI or more, and the metal material includes iron (Fe), nickel It contains (Ni), oxygen (O) and chromium (Cr), the atomic concentration of chromium (Cr) is 0.03 at% or less invar (invar), and the metal material includes an external part including a surface and an external part other than the external part. wherein in a depth range of 14 nm or less from the surface of at least one of the non-deposited region, the ineffective portion and the island portion, the maximum atomic concentration of iron (Fe) is 60 at% or less, and the nickel The maximum atomic concentration of (Ni) is 40 at% to 45 at%, and the maximum atomic concentration of oxygen (O) is 10 at% or less.

The metal plate according to the embodiment may have improved corrosion resistance. In detail, the metal plate may improve the corrosion resistance of the metal plate by increasing the surface nickel (Ni) content of the metal plate, thereby preventing the metal plate from being corroded. Accordingly, it is possible to improve the corrosion resistance of the deposition mask made of the metal plate.

In addition, the metal plate according to the embodiment may include chromium (Cr) having an atomic concentration of 0.03 at% or less. That is, the content of chromium (Cr) included in the metal plate 10 can be minimized. In detail, since the metal plate contains a very small amount of the chromium (Cr), the chromium (Cr) can be uniformly dispersed in the metal plate manufacturing process, and segregation and formation of a second precipitated phase on the metal plate can be prevented. . Accordingly, the metal plate may have uniform physical properties and improve workability. Accordingly, it is possible to uniformly form the face-to-face holes and the face-to-face holes formed on one surface and the other surface of the metal plate, and more precisely and uniformly form the through-holes formed by the face holes and the face-to-face holes.

Accordingly, the deposition mask according to the embodiment can uniformly deposit an OLED pixel pattern having a resolution of 400 PPI or higher, specifically a high resolution of 500 PPI or higher, and further, an ultra-high resolution OLED pixel pattern of 800 PPI or higher.

1 is a view showing a cross-sectional view of a metal plate according to an embodiment.
2 to 4 are diagrams showing graphs of the composition of the metal plate according to the embodiment.
5 to 7 are conceptual views for explaining a process of depositing an organic material on a substrate using a deposition mask according to an embodiment.
8 is a diagram illustrating a plan view of a deposition mask according to an embodiment.
9 is a diagram illustrating a plan view of an effective part of a deposition mask according to an embodiment.
10 is a photomicrograph of an effective part of the deposition mask according to the embodiment viewed from a plane.
11 is a diagram illustrating another plan view of a deposition mask according to an embodiment.
FIG. 12 is a view showing a cross-sectional view taken along line A-A' and a cross-sectional view taken along line B-B' of FIG. 9 or 10 overlapping each other.
13 is a view illustrating a cross-sectional view taken in the BB′ direction of FIG. 9 or 10 .
14 is a diagram illustrating a manufacturing process of a deposition mask according to an embodiment.
15 and 16 are diagrams illustrating a deposition pattern formed through a deposition mask according to an embodiment.

Hereinafter, the configuration and operation according to the present invention will be described in detail with reference to the accompanying drawings. In the description with reference to the accompanying drawings, the same components are given the same reference, regardless of the reference numerals, and redundant description thereof will be omitted. Terms such as first, second, etc. may be used to describe various elements, but the elements should not be limited by the terms. The above terms are used only for the purpose of distinguishing one component from another.

In addition, in the description of the embodiments, each layer (film), region, pattern or structure is “above/on” or “below/under” the substrate, each layer (film), region, pad or patterns. The description of being formed on “under)” includes all those formed directly or through another layer. The standards for the upper/above or lower/lower layers of each layer will be described with reference to the drawings.

In addition, when it is said that a certain part is "connected" with another part, it includes not only the case where it is "directly connected" but also the case where it is "indirectly connected" with another member interposed therebetween. In addition, when a part "includes" a certain component, this means that other components may be further provided without excluding other components unless otherwise stated.

Hereinafter, a metal plate according to an embodiment will be described with reference to the drawings.

1 is a view showing a cross-section of a metal plate according to an embodiment.

Referring to FIG. 1 , the metal plate 10 may include a metal material. For example, the metal plate 10 may include a nickel (Ni) alloy. In detail, the metal plate 10 may include an iron (Fe) and nickel (Ni) alloy. In more detail, the metal plate 10 may include iron (Fe), nickel (Ni), oxygen (O), and chromium (Cr). For example, the metal plate 10 may contain about 60 wt% to about 65 wt% of iron, and about 35 wt% to about 40 wt% of nickel. The component, content, and weight % of the metal plate 10 are, by selecting a specific region (a*b) on the plane of the metal plate 10, the specimen (a*) corresponding to the thickness (t) of the metal plate 10 . b * t) can be sampled and dissolved in a strong acid, etc. to check the weight% of each component, but is not limited thereto.

In detail, the metal plate 10 may contain about 63.5 wt% to about 64.5 wt% of iron, and about 35.5 wt% to about 36.5 wt% of nickel. In addition, the metal plate 10 is a small amount of carbon (C), silicon (Si), sulfur (S), phosphorus (P), manganese (Mn), titanium (Ti), cobalt (Co), copper (Cu), At least one element selected from among silver (Ag), vanadium (V), niobium (Nb), indium (In), and antimony (Sb) may be further included. Here, a small amount may mean 1 wt% or less. That is, the metal plate 10 may include Invar. The Invar is an alloy containing iron and nickel, and is a low thermal expansion alloy having a thermal expansion coefficient close to zero. That is, since the invar has a very small coefficient of thermal expansion, it is used in precision parts such as masks and precision instruments. Accordingly, the deposition mask manufactured using the metal plate 10 may have improved reliability, thereby preventing deformation and increasing lifespan.

The metal plate 10 including the above-described iron-nickel alloy may be manufactured by a cold rolling method. In detail, the metal plate 10 may be formed through melting, forging, hot rolling, normalizing, primary cold rolling, primary annealing, secondary cold rolling and secondary annealing processes, and the above processes or additional thickness reduction processes It can be formed to a thickness of about 30 μm or less through the In addition, the surface atomic concentration of the metal plate 10 may be changed during the manufacturing process of the metal plate 10 . In detail, the metal plate 10 may include an external part SP including a surface and an internal part IP other than the external part SP, and atoms of the external part SP of the metal plate 10 . The concentration may be different from the atomic concentration of the inner portion IP of the metal plate 10 .

The metal plate 10 may have a rectangular shape. In detail, the metal plate 10 may have a rectangular shape having a major axis and a minor axis, and may have a thickness of about 30 μm or less.

The metal plate 10 may include iron (Fe), nickel (Ni), oxygen (O), and chromium (Cr), and the atomic concentration of the chromium (Cr) is about 0.03 with respect to the entire metal plate 10 . at% or less.

Also, the atomic concentration of the outer portion SP of the metal plate 10 may be different from that of the inner portion IP of the metal plate 10 . Here, the outer portion SP may mean a depth range of about 30 nm or less from the surface of each of the one and the other surfaces of the metal plate 10 . In detail, the outer part SP may mean a depth range of about 25 nm or less from the surface of the metal plate 10 . Also, the inner portion IP may mean a depth range exceeding the above-described range from the surface of the metal plate 10 . In detail, the inner portion IP may mean a portion in a depth range exceeding 30 nm from the surface of the metal plate 10 .

The type and atomic concentration of elements included in the metal plate 10 may be confirmed by X-ray Photoelectron Spectroscopy (XPS). The X-ray elemental analysis method is one of electron spectroscopy methods, and an element may be analyzed using X-rays as a light source. In detail, when X-rays are irradiated to a metal plate, photoelectrons are emitted out of the material, and the kinetic energy reflects the magnitude of the bonding energy at the original position of the atoms constituting the material. there is. In the example, the elements of the metal plate 10 were measured using XPS equipment (manufactured by ULVAL-PHI), wherein the X-ray incident angle was 90 degrees and the photoelectron incident angle was 40 degrees. In addition, the energy source of X-rays used was Monochromated Al-Kα (hv=1486.6 eV), and the 100 μmФ area of the sample metal plate was measured with X-ray outputs of 15 kV and 1.6 mA.

2 to 4 are views illustrating XPS graphs for the ratio of the atomic concentration of each element of the metal plate according to the embodiment. 2 to 4 , the atomic concentration of the outer portion SP of the metal plate 10 according to the embodiment can be seen. In this case, in the graphs shown in each of the drawings, the X-axis means time (Min), and the Y-axis means the atomic concentration (at%). In addition, two samples of the same size were manufactured by processing a random area of the metal plate for measurement, and each of the samples was manufactured to have a width of 1 cm and a length of 1 cm. In addition, the measurement was performed at a constant temperature and humidity condition of a temperature of about 25° C. and a humidity of about 40% to about 50%, and the measurement result of the measured first sample is shown by a solid line, and the measurement result of the second sample is shown by a dotted line. shown.

In the graphs of FIGS. 2 to 4, the 0.6 minute (Min) area is about 3 nm to about 4 nm deep from the surface of the metal plate 10, and in more detail, the 0.6 minute (Min) area is about 3.6 nm from the surface of the metal plate 10. Measured at a depth point results can mean In addition, in the graph, the 1.5-minute (Min) region is a point measured at a depth of about 8 nm to about 10 nm from the surface of the metal plate 10, and in more detail, the 1.5-minute (Min) region is measured at a depth of about 9 nm. . That is, when sputtering is performed on the metal plate 10 for 0.1 minutes (Min), the composition can be measured at a depth of about 0.6 nm from the surface of the metal plate 10 . In the case of X-ray elemental analysis, since the atomic concentration within a depth range of about 5 nm from the measurement point can be measured, the result of measuring a specific point can be interpreted as measuring the composition in a depth range of about 5 nm from the specific point. can For example, when the sputtering time is 0.6 minutes, it may mean that the surface of the metal plate 10 is sputtered for 0.6 minutes, and it means measuring the atomic concentration included in the depth range of about 1 nm to about 7 nm from the surface. can In detail, the sputtering time of 0.6 min is after sputtering from the surface to a depth of 3.6 nm, and then measuring the atomic concentration contained in the depth of about 3.6 nm to about 8.6 nm, which is a range from the sputtering end point to a point deeper by about 5 nm can mean that Using X-ray elemental analysis while sputtering is in progress, it is possible to determine the composition and atomic concentration at a specific depth from the surface. If this is used, the concentration and maximum concentration of a specific atom in a range from the surface to a specific depth can be identified, and an increase/decrease tendency of the concentration of a specific atom can be identified. In addition, in the description below for each atomic concentration, the maximum atomic concentration may mean a maximum value among values measured using the X-ray elemental analysis method.

Referring to FIG. 2 , the atomic concentration of iron included in the outer portion SP of the metal plate 10 may be different from the maximum atomic concentration of iron included in the inner portion IP of the metal plate 10 . For example, the maximum atomic concentration of iron in the outer portion SP of the metal plate 10 may be about 65 at% or less. In detail, the maximum atomic concentration of iron in a depth range of about 14 nm or less from the surface of the metal plate 10 may be about 60 at% or less. In addition, the maximum atomic concentration of iron in a depth range of about 12 nm or less from the surface of the metal plate 10 may be about 60 at% or less. In addition, the maximum atomic concentration of iron in a depth range of about 10 nm or less from the surface of the metal plate 10 may be about 60 at% or less. In addition, the maximum atomic concentration of iron in a depth range of about 8 nm or less from the surface of the metal plate 10 may be 60 at% or less. In addition, the maximum atomic concentration of iron in a depth range of about 6 nm or less from the surface of the metal plate 10 may be 60 at% or less. Specifically, when sputtering is performed for a time of 0.3 to 1.5 minutes, and a deeper point in the range of about 5 nm or less is measured from the sputtering end point, the maximum atomic concentration of iron may be about 60 at% or less.

In addition, the maximum atomic concentration of iron in a depth range of about 14 nm or less from the surface of the metal plate 10 may be about 50 at% to about 60 at%. In detail, the maximum atomic concentration of iron measured after performing the sputtering for 0.3 minutes to 1.5 minutes may be about 50 at% to about 60 at%.

In addition, the maximum atomic concentration of iron in a depth range of about 7 nm or less from the surface of the metal plate 10 may be about 50 at% or less. In detail, the maximum atomic concentration of iron in a depth range of about 6.8 nm or less from the surface may be about 50 at% or less. For example, when the sputtering is performed for 0.3 minutes, sputtering may proceed from the surface of the metal plate 10 to a depth of about 1.8 nm, and when measured from the sputtering end point to a deeper point of about 5 nm or less, the iron The maximum atomic concentration of may be about 50 at% or less.

In addition, the maximum atomic concentration of iron in the outer portion SP of the metal plate 10 may gradually increase as the sputtering time increases, for example, as the depth of the measurement point after sputtering increases. That is, the concentration may gradually increase as the distance from the surface of the metal plate 10 increases.

Referring to FIG. 3 , the atomic concentration of nickel included in the outer portion SP of the metal plate 10 may be different from the atomic concentration of nickel included in the inner portion IP of the metal plate 10 . In detail, the maximum atomic concentration of nickel included in the outer portion SP and the inner portion IP may be different. For example, the maximum atomic concentration of nickel in the outer portion SP of the metal plate 10 may be about 45 at% or less, and the maximum atomic concentration of nickel in the inner portion IP is less than the above-described range. can In detail, in the outer portion SP of the metal plate 10 , the maximum atomic concentration of nickel in a depth range of about 14 nm or less from the surface of the metal plate 10 may be about 45 at% or less. In addition, the maximum atomic concentration of nickel in a depth range of about 12 nm or less from the surface may be about 45 at% or less. In addition, the maximum atomic concentration of the nickel in a depth range of about 10 nm or less from the surface may be about 45 at% or less. In addition, the maximum atomic concentration of the nickel in a depth range of about 8 nm or less from the surface may be about 45 at% or less. In addition, the maximum atomic concentration of the nickel in a depth range of about 6 nm or less from the surface may be about 40 at% or less. That is, when the sputtering is performed for 0.6 to 1.5 minutes and a deeper point in the range of about 5 nm or less is measured from the sputtering end point, the maximum atomic concentration of nickel may be about 45 at% or less.

In detail, the maximum atomic concentration of nickel in a depth range of about 14 nm or less from the surface of the metal plate 10 may be about 40 at% to about 45 at%. In addition, the maximum atomic concentration of nickel in a depth range of about 12 nm or less from the surface of the metal plate 10 may be about 40 at% to about 45 at%. In addition, the maximum atomic concentration of nickel in a depth range of about 10 nm or less from the surface of the metal plate 10 may be about 40 at% to about 45 at%. In addition, the maximum atomic concentration of nickel in a depth range of about 8 nm or less from the surface of the metal plate 10 may be about 40 at% to about 45 at%.

In more detail, the maximum atomic concentration of nickel in a depth range of about 14 nm or less from the surface of the metal plate 10 may be about 42 at% to about 44 at%. In addition, the maximum atomic concentration of nickel in a depth range of about 12 nm or less from the surface of the metal plate 10 may be about 42 at% to about 44 at%. In addition, the maximum atomic concentration of nickel in a depth range of about 10 nm or less from the surface may be about 42 at% to about 44 at%. In addition, the maximum atomic concentration of nickel in a depth range of about 8 nm or less from the surface of the metal plate 10 may be about 42 at% to about 44 at%.

For example, when the inner portion IP of the metal plate 10 includes about 35.5 wt% to about 36.5 wt% nickel, the maximum nickel atom concentration of the outer portion SP of the metal plate 10 is about 40 at% to about 45 at%. Preferably, the maximum nickel atom concentration of the outer portion SP of the metal plate 10 may be about 42 at% to about 44 at%.

In this way, while increasing the nickel atom concentration on the surface of the metal plate 10, the maximum nickel atom concentration is increased to about 40 at% to about 45 at%, preferably to about 42 at% to about 44 at%, Rust generated on the surface of the metal plate 10 can be effectively suppressed.

In addition, the maximum atomic concentration of nickel in a depth range of about 1 nm to about 14 nm from the surface of the metal plate 10 may be about 45 at% or less. In more detail, the atomic concentration of nickel in a depth range of about 1.5 nm to about 14 nm from the surface of the metal plate 10 may be about 40 at% to about 45 at%. Preferably, the atomic concentration of nickel in a depth range of about 3 nm to about 14 nm from the surface of the metal plate 10 may be about 42 at% to about 44 at%.

In addition, the maximum atomic concentration value of nickel included in the depth range of about 9 nm or less from the surface may be greater than the maximum atomic concentration value of nickel included in the depth range of about 7 nm or less from the surface. In detail, the maximum atomic concentration value of nickel included in the depth range of about 8.6 nm or less from the surface may be greater than the maximum atomic concentration value of nickel included in the depth range of about 6.8 nm or less from the surface. For example, the maximum value of the atomic concentration of nickel measured based on the point at which sputtering was performed for 0.6 minutes may be greater than the maximum value of the atomic concentration of nickel measured based on the point at which the sputtering was performed for 0.3 minutes. In detail, the maximum value of the nickel atom concentration in the depth range of about 3.6 nm to about 8.6 nm from the surface measured at the point after performing the sputtering for 0.6 minutes is measured based on the point after performing the sputtering for 0.3 minutes It may be greater than the maximum of the nickel atom concentration in the depth range of about 1.8 nm to about 6.8 nm from one surface. In addition, when sputtering is performed for 0.3 minutes to 1.5 minutes to measure the atomic concentration of the outer part SP, the value of the nickel atomic concentration measured after performing the sputtering for 0.6 minutes has a maximum value in the surface area SP can Also, the concentration of nickel atoms included in the outer portion SP may have a maximum value in a depth range of about 3 nm to about 9 nm from the surface. Specifically, it may have a maximum value in a depth range of about 3.6 nm to about 8.6 nm from the surface.

Referring to FIG. 4 , the atomic concentration of oxygen included in the outer portion SP of the metal plate 10 may be different from the atomic concentration of oxygen included in the inner portion IP of the metal plate 10 . For example, the minimum atomic concentration of oxygen in the outer portion SP of the metal plate 10 may be about 5 at% or less.

In detail, in the outer portion SP of the metal plate 10 , the minimum atomic concentration of oxygen in a depth range of about 23 nm or less from the surface of the metal plate 10 may be about 10 at% or less, and a depth of about 14 nm or less The minimum atomic concentration of oxygen in the range may be about 10 at% or less. In addition, in the depth range of about 12 nm or less, the minimum atomic concentration of oxygen may be about 10 at% or less. In addition, in a depth range of about 10 nm or less, the minimum atomic concentration of oxygen may be about 10 at% or less. In addition, in the depth range of about 8 nm or less, the minimum atomic concentration of oxygen may be about 10 at% or less.

In more detail, the minimum atomic concentration of oxygen in a depth range of about 14 nm or less from the surface of the metal plate 10 may be about 5 at% or less. In addition, the minimum atomic concentration of oxygen in a depth range of about 12 nm or less from the surface may be about 5 at% or less. In addition, the minimum atomic concentration of oxygen in a depth range of about 10 nm or less from the surface may be about 5 at% or less.

In addition, the minimum atomic concentration value of oxygen included in the depth range of about 7 nm or less from the surface may be greater than the minimum atomic concentration value of oxygen included in the depth range of about 9 nm or less from the surface. In detail, the minimum atomic concentration value of oxygen included in the depth range of about 6.8 nm or less from the surface may be greater than the minimum atomic concentration value of oxygen included in the depth range of about 8.6 nm or less from the surface. For example, the minimum value of the oxygen atom concentration measured based on the point at which sputtering is performed for 0.3 minutes may be greater than the minimum value of the oxygen atom concentration measured based on the point at which the sputtering is performed for 0.6 minutes. In detail, the minimum value of oxygen atom concentration in the range of about 1.8 nm to about 6.8 nm depth from the surface measured based on the point after performing the sputtering for 0.3 minutes is from the surface measured based on the point after performing the sputtering for 0.6 minutes It may be greater than the minimum value of the oxygen atom concentration in the depth range of about 3.6 nm to about 8.6 nm. In addition, the minimum value of the oxygen atom concentration measured based on the point at which the sputtering was performed for 0.6 minutes may be greater than the minimum value of the oxygen atom concentration measured based on the point at which the sputtering was performed for 0.9 minutes. In detail, the sputtering is performed for 0.6 minutes and the minimum value of oxygen atom concentration in the range of about 3.6 nm to about 8.6 nm depth from the surface measured based on that point is from the surface measured based on the point after 0.9 minutes of sputtering. It may be greater than the minimum value of the oxygen atom concentration in the range of about 5.4 nm to about 10.4 nm depth.

That is, the metal plate 10 according to the embodiment may change the concentration of surface atoms in the process of manufacturing the metal plate 10 . In detail, the concentration of atoms on the surface of the metal plate 10 may be controlled through the above-described annealing process.

For example, the annealing process may be performed on the metal plate 10 at a temperature of about 550° C. to about 650° C. for about 45 seconds to about 75 seconds. Preferably, the annealing process may be performed on the metal plate 10 at a temperature of about 600° C. for about 60 seconds.

The annealing process may be performed in an inert gas atmosphere. For example, the annealing process may be performed in an inert gas atmosphere such as helium, nitrogen, and argon. Here, the atmosphere may mean an atmosphere in which 90% or more of the inert gas is present.

Atoms on the surface of the metal plate 10 may be rearranged by the annealing process. In detail, by the annealing process, the atomic concentration of iron, nickel, oxygen, etc. on the surface of the metal plate 10 may be changed, and an oxide film may be formed on the surface to prevent corrosion and corrosion in advance.

That is, the inner portion IP of the metal plate 10 according to the embodiment may include about 60 wt% to about 65 wt% iron and about 35 wt% to about 40 wt% nickel. In detail, the inner portion IP of the metal plate 10 may include about 63.5 wt% to about 64.5 wt% of iron and about 35.5 wt% to about 36.5 wt% of nickel.

In addition, the outer portion SP of the metal plate 10, for example, a region in a depth range of about 30 nm or less from the surface of the metal plate 10, has a higher nickel atom concentration than the inner portion IP of the metal plate 10 In particular, the atomic concentration of nickel may have a maximum value in a depth range of about 10 nm or less from the surface. In detail, the atomic concentration of nickel may have a maximum value in a depth range of about 8.6 nm or less from the surface. Also, the metal plate 10 may have an oxygen atom concentration of about 10 at% or less in a depth range of about 10 nm or less from the surface.

Accordingly, the metal plate 10 may have improved corrosion resistance, thereby effectively preventing corrosion by an external environment. In detail, since the surface oxygen atom concentration of the metal plate 10 is low, the thickness of the oxide film formed on the surface may be minimized, and since the surface nickel atom concentration is high, corrosion resistance may be improved.

That is, when a mask 100 for deposition, which will be described later, is manufactured using the metal plate 10 , it is possible to prevent corrosion during transport or storage of the metal plate 10 , and the deposition mask 100 . Corrosion of the deposition mask 100 can be prevented when repeatedly used to form a pixel pattern on the substrate 300 by using .

In addition, the metal plate 10 can minimize the content of chromium. In detail, the atomic concentration of chromium may be included in an amount of about 0.03 at% or less with respect to the entire metal plate 10 . In more detail, in the Invar, the chromium may be included in an amount of about 0.03 at% or less. The chromium is an element capable of improving the corrosion resistance of the metal plate 10 . However, there is a problem in that it is difficult to uniformly disperse or distribute the chromium in the composition for manufacturing the metal plate 10 . In addition, when it is not uniformly dispersed or distributed in the composition, the physical properties of the metal plate 10 may be changed by forming segregation and a second precipitated phase.

Accordingly, the metal plate 10 according to the embodiment may implement uniform physical properties by minimizing the chromium content. Accordingly, by processing the metal plate 10 , it is possible to improve workability when manufacturing the deposition mask 100 , which will be described later. In detail, in the manufacturing process of the mask 100 for deposition of forming small face holes (V1) and face holes (V2) on one side and the other side of the metal plate 10, respectively, the small face holes (V1) and the face holes (V2) It can be formed uniformly, and the through hole TH formed by the small face hole V1 and the large face hole V2 can be formed more precisely and uniformly.

5 to 7 are conceptual views for explaining a process of depositing an organic material on the substrate 300 using the deposition mask 100 according to the embodiment.

FIG. 5 is a view showing an organic material deposition apparatus including a deposition mask 100 according to an embodiment, and FIG. 6 is a diagram in which the deposition mask 100 according to the embodiment is tensioned to be mounted on the mask frame 200 . It is a drawing showing that 7 is a diagram illustrating that a plurality of deposition patterns are formed on the substrate 300 through a plurality of through-holes of the deposition mask 100 .

5 to 7 , the organic material deposition apparatus may include a deposition mask 100 , a mask frame 200 , a substrate 300 , an organic material deposition container 400 , and a vacuum chamber 500 .

The deposition mask 100 may be made of the above-described metal plate 10 . The deposition mask 100 may include a plurality of through holes TH in an effective portion for deposition. The deposition mask 100 may be a deposition mask substrate including a plurality of through holes TH. In this case, the through hole may be formed to correspond to the pattern to be formed on the substrate. The deposition mask 100 may include an ineffective portion other than the effective portion including the deposition area.

The mask frame 200 may include an opening. The plurality of through-holes of the deposition mask 100 may be disposed on a region corresponding to the opening. Accordingly, the organic material supplied to the organic material deposition container 400 may be deposited on the substrate 300 . The deposition mask may be disposed and fixed on the mask frame 200 . For example, the deposition mask may be stretched and fixed on the mask frame 200 by welding.

The deposition mask 100 may be stretched in opposite directions at the outermost edge of the deposition mask 100 . In the deposition mask 100 , one end of the deposition mask 100 and the other end opposite to the one end may be pulled in opposite directions in the longitudinal direction of the deposition mask 100 . One end and the other end of the deposition mask 100 may face each other and be disposed in parallel. One end of the deposition mask 100 may be any one of the ends forming the four side surfaces disposed on the outermost side of the deposition mask 100 . For example, the deposition mask 100 may be tensioned with a force of about 0.4 kgf to about 1.5 kgf. Accordingly, the stretched deposition mask 100 may be mounted on the mask frame 200 .

Subsequently, the deposition mask 100 may fix the deposition mask 100 to the mask frame 200 by welding an ineffective portion of the deposition mask 100 . Next, a portion of the deposition mask 100 disposed outside the mask frame 200 may be removed by cutting or the like.

The substrate 300 may be a substrate used for manufacturing a display device. For example, the substrate 300 may be a substrate 300 for depositing an organic material for an OLED pixel pattern. Organic patterns of red, green, and blue may be formed on the substrate 300 to form pixels having three primary colors of light. That is, an RGB pattern may be formed on the substrate 300 . Although not shown in the drawings, a white organic material pattern may be further formed on the substrate 300 in addition to the red, green, and blue organic material patterns. That is, a WRGB pattern may be formed on the substrate 300 .

The organic material deposition vessel 400 may be a crucible. An organic material may be disposed inside the crucible.

As a heat source and/or current are supplied to the crucible in the vacuum chamber 500 , the organic material may be deposited on the substrate 100 .

Referring to FIG. 7 , the deposition mask 100 may include one surface 101 and the other surface 102 facing the first surface.

The one surface 101 of the deposition mask 100 may include a small face hole V1 , and the other surface 102 of the deposition mask 100 may include a large face hole V2 . The through hole TH may communicate with each other by a communication part CA through which a boundary between the small face hole V1 and the large face hole V2 is connected.

The deposition mask 100 may include a first etching surface ES1 in the small surface hole V1 . The deposition mask 100 may include a second etching surface ES2 in the facing hole V2 . The first etching surface ES1 in the small face hole V1 and the second etching surface ES2 in the large face hole V2 may communicate with each other to form a through hole. For example, the first etching surface ES1 in one small face hole V1 may communicate with the second etching surface ES2 in one large face hole V2 to form one through hole.

A width of the face-to-face hole V2 may be greater than a width of the small-faced hole V1. In this case, the width of the small face hole V1 may be measured on the one surface 101 , and the width of the large face hole V2 may be measured on the other surface 102 .

The small face hole V1 may be disposed toward the substrate 300 . The small face hole V1 may be disposed close to the substrate 300 . Accordingly, the small face hole V1 may have a shape corresponding to the deposition material, that is, the deposition pattern DP.

The facing hole V2 may be disposed toward the organic material deposition vessel 400 . Accordingly, the facing hole V2 can accommodate the organic material supplied from the organic material deposition container 400 in a wide width, and through the small face hole V1 having a smaller width than the facing hole V2, the A fine pattern can be quickly formed on the substrate 300 .

8 is a diagram illustrating a plan view of the deposition mask 100 according to the embodiment. Referring to FIG. 8 , the deposition mask 100 according to the embodiment may include a deposition area DA and a non-deposition area NDA.

The deposition area DA may be an area for forming a deposition pattern. The deposition area DA may include a pattern area and a non-pattern area. The pattern area may be a region including the small face hole V1, the face hole V2, the through hole TH, and the island part IS, and the non-pattern area includes the small face hole V1 and the face hole V2. ), the through hole TH, and the island portion IS may be a region not including.

Also, one deposition mask 100 may include a plurality of deposition areas DA. For example, the deposition area DA of the embodiment may include a plurality of effective portions AA1 , AA2 , and AA3 for forming a plurality of deposition patterns.

The plurality of effective portions AA1 , AA2 , and AA3 may include a first effective portion AA1 , a second effective portion AA2 , and a third effective portion AA3 . One deposition area DA may be any one of the first effective part AA1 , the second effective part AA2 , and the third effective part AA3 .

In the case of a small display device such as a smart phone, an effective portion of any one of a plurality of deposition regions included in the deposition mask 100 may be for forming one display device. Accordingly, one deposition mask 100 may include a plurality of effective portions, and thus a plurality of display devices may be formed at the same time. Accordingly, the deposition mask 100 according to the embodiment may improve process efficiency.

Alternatively, in the case of a large display device such as a television, a plurality of effective portions included in one deposition mask 100 may be a part for forming one display device. In this case, the plurality of effective parts may be for preventing deformation of the mask due to a load.

The deposition area DA may include a plurality of isolation areas IA1 and IA2 included in one deposition mask 100 . Separation areas IA1 and IA2 may be disposed between adjacent effective portions. The separation areas IA1 and IA2 may be spaced apart areas between a plurality of effective portions. For example, a first separation area IA1 may be disposed between the first effective part AA1 and the second effective part AA2 . In addition, a second separation area IA2 may be disposed between the second effective part AA2 and the third effective part AA3 . That is, adjacent effective regions may be distinguished from each other by the separation region, and one deposition mask 100 may support a plurality of effective regions.

The deposition mask 100 may include non-deposition areas NDA on both sides of the deposition area DA in the longitudinal direction. The deposition mask 100 according to the embodiment may include the non-deposition area NDA on both sides of the deposition area DA in a horizontal direction.

The non-deposition region NDA of the deposition mask 100 may be a region not involved in deposition. The non-deposition area NDA may include frame fixing areas FA1 and FA2 for fixing to the mask frame 200 . For example, the non-deposition area NDA of the deposition mask 100 may include a first frame fixing area FA1 on one side of the deposition area DA, and A second frame fixing area FA2 may be included on the other side opposite to the one side. The first frame fixing area FA1 and the second frame fixing area FA2 may be areas fixed to the mask frame 200 by welding.

As described above, the deposition area DA may be an area for forming a deposition pattern, and the non-deposition area NDA may be an area not involved in deposition. In this case, a surface treatment layer different from that of the metal plate 10 may be formed in the deposition area DA of the deposition mask 100 , and a surface treatment layer may not be formed in the non-deposition area NDA. there is. Alternatively, a surface treatment layer different from the material of the metal plate 10 may be formed only on one surface 101 of the deposition mask 100 or the other surface 102 opposite to the one surface 101 . Alternatively, a surface treatment layer different from that of the metal plate 10 may be formed on only a portion of one surface of the deposition mask 100 . For example, one surface and / or the other surface of the deposition mask 100, all and / or part of the deposition mask 100 may include a surface treatment layer having a slower etching rate than the material of the metal plate 10, The etching factor may be improved. Accordingly, in the deposition mask 100 of the embodiment, it is possible to form fine through-holes with high efficiency. For example, the deposition mask 100 of the embodiment may have a resolution of 400 PPI or higher. Specifically, the deposition mask 100 can form a deposition pattern having a high resolution of 500 PPI or more with high efficiency. Here, the surface treatment layer may include an element different from the material of the metal plate 10 or may include a metal material having a different composition of the same element. In this regard, it will be described in more detail in the manufacturing process of the deposition mask to be described later.

The non-deposition area NDA may include half-etched portions HF1 and HF2 . For example, the non-deposition area NDA of the deposition mask 100 may include a first half-etched portion HF1 on one side of the deposition area DA, and A second half-etched part HF2 may be included on the other side opposite to the one side. The first half-etched part HF1 and the second half-etched part HF2 may be regions in which grooves are formed in the depth direction of the deposition mask 100 . The first half-etched part HF1 and the second half-etched part HF2 may have a groove part having a thickness of about 1/2 of that of the deposition mask, so that stress during tension of the deposition mask 100 may be dispersed. there is. In addition, the half-etched portions HF1 and HF2 are preferably formed to be symmetrical in the X-axis direction or symmetrical in the Y-axis direction with respect to the center of the deposition mask 100 . Through this, the tensile force in both directions can be uniformly adjusted.

The half-etched portions HF1 and HF2 may be formed in various shapes. The half-etched parts HF1 and HF2 may include semicircular grooves. The groove may be formed on at least one of one surface of the deposition mask 100 and the other surface opposite to the one surface. Preferably, the half-etched portions HF1 and HF2 may be formed on a surface corresponding to the small face hole V1. Accordingly, since the half-etched portions HF1 and HF2 may be formed simultaneously with the small face hole V1, process efficiency may be improved. In addition, the half-etched portions HF1 and HF2 may disperse stress that may be generated due to a size difference between the facing holes V2 . However, the embodiment is not limited thereto, and the half-etched portions HF1 and HF2 may have a rectangular shape. For example, the first half-etched part HF1 and the second half-etched part HF2 may have a rectangular or square shape. Accordingly, the deposition mask 100 can effectively disperse stress.

In addition, the half-etched portions HF1 and HF2 may include a curved surface and a flat surface. A plane of the first half-etched part HF1 may be disposed adjacent to the first effective part AA1 , and the plane may be horizontally disposed with an end of the deposition mask 100 in a longitudinal direction. The curved surface of the first half-etched part HF1 may be convex toward one end of the deposition mask 100 in the longitudinal direction. For example, the curved surface of the first half-etched part HF1 may be formed such that a half of the vertical length of the deposition mask 100 corresponds to a radius of a semicircular shape.

In addition, a plane of the second half-etched part HF2 may be disposed adjacent to the third effective part AA3 , and the plane may be disposed horizontally with an end of the deposition mask 100 in the longitudinal direction. there is. The curved surface of the second half-etched part HF2 may be convex toward the other end in the longitudinal direction of the deposition mask 100 . For example, the curved surface of the second half-etched part HF2 may be formed such that a half of the vertical length of the deposition mask 100 corresponds to a radius of a semicircular shape.

The half-etched portions HF1 and HF2 may be formed at the same time as the small-faced hole V1 or the large-faced hole V2 is formed. This can improve process efficiency. In addition, the grooves formed on the one surface 101 and the other surface 102 of the deposition mask 100 may be formed to be shifted from each other. Accordingly, the half-etched portions HF1 and HF2 may not penetrate.

Also, the deposition mask 100 according to the embodiment may include four half-etched portions. For example, since the half-etching parts HF1 and HF2 may include an even number of half-etching parts HF1 and HF2, stress may be more efficiently distributed.

In addition, the half-etched portions HF1 and HF2 may be further formed in the non-effective portion UA of the deposition area DA. For example, a plurality of the half-etched portions HF1 and HF2 may be dispersed in all or a part of the ineffective portion UA to disperse stress during tension of the deposition mask 100 .

In addition, the half-etched portions HF1 and HF2 may be formed in the frame fixing areas FA1 and FA2 and/or in the peripheral area of the frame fixing areas FA1 and FA2. Accordingly, the deposition mask 100 is generated when the deposition mask 100 is fixed to the mask frame 200 and/or when the deposition material is deposited after the deposition mask 100 is fixed to the mask frame 200 . ) can be uniformly distributed. Accordingly, the deposition mask 100 can be maintained to have uniform through-holes.

That is, the deposition mask 100 according to the embodiment may include a plurality of half-etched portions. In detail, the deposition mask 100 according to the embodiment is illustrated as including the half-etched portions HF1 and HF2 only in the non-deposition area NDA, but is not limited thereto, and the deposition area DA and the non-deposition area ( NDA), at least one area may further include a plurality of half-etched parts. Accordingly, the stress of the deposition mask 100 may be uniformly distributed.

The frame fixing areas FA1 and FA2 for fixing to the mask frame 200 of the non-deposition area NDA include the half-etched parts HF1 and HF2 and the half-etched part HF1 of the non-deposited area NDA. HF2) and the effective portion of the deposition area DA adjacent thereto. For example, the first frame fixed area FA1 may include a first half-etched portion HF1 of the non-deposition area NDA and a second portion of the deposition area DA adjacent to the first half-etched portion HF1 . It may be disposed between the first effective portions AA1. For example, the second frame fixed area FA2 may include a second half-etched portion HF2 of the non-deposition area NDA and a second half-etched portion HF2 of the deposition area DA adjacent to the second half-etched portion HF2 . It may be disposed between the three effective parts AA3. Accordingly, it is possible to simultaneously fix a plurality of deposition pattern portions.

In addition, the deposition mask 100 may include semicircular openings at both ends in the horizontal direction (X). The non-deposition area NDA of the deposition mask may include one semicircular opening at both ends in a horizontal direction, respectively. For example, the non-deposition area NDA of the deposition mask 100 may include an open portion having an open center in the vertical direction Y on one side of the horizontal direction. For example, the non-deposition area NDA of the deposition mask 100 may include an open part having an open center in the vertical direction on the other side opposite to the one side in the horizontal direction. That is, both ends of the deposition mask 100 may include an open portion at 1/2 the length in the vertical direction. For example, both ends of the deposition mask 100 may have a horseshoe-like shape.

In this case, the curved surface of the open part may face the half-etched parts HF1 and HF2. Accordingly, the open portions located at both ends of the deposition mask 100 are the first half-etched portions HF1 and HF2 or the second half-etched portions HF1 and HF2 and the vertical length of the deposition mask 100 . The separation distance may be the shortest at 1/2 of the point.

Also, a vertical length d1 of the first half-etched part HF1 or the second half-etched part HF2 may correspond to a vertical length d2 of the open part. Accordingly, when the deposition mask 100 is stretched, stress may be evenly distributed, thereby reducing wave deformation of the deposition mask 100 . Accordingly, the deposition mask 100 according to the embodiment may have uniform through-holes, and thus the deposition efficiency of the pattern may be improved. Preferably, the vertical length d1 of the first half-etched part HF1 or the second half-etched part HF2 is about 80% to about 200% of the vertical length d2 of the open part. (d1:d2 = 0.8~2:1). A length d1 in the vertical direction of the first half-etched part HF1 or the second half-etched part HF2 may be about 90% to about 150% of the vertical length d2 of the open part ( d1:d2 = 0.9 to 1.5:1). A length d1 in the vertical direction of the first half-etched part HF1 or the second half-etched part HF2 may be about 95% to about 110% of the vertical length d2 of the open part ( d1:d2 = 0.95 to 1.1:1).

Also, although not shown in the drawings, the half-etched portion may be further formed in the ineffective portion UA of the deposition area DA. A plurality of the half-etched portions may be dispersed in all or part of the non-effective portion UA to disperse stress during tension of the deposition mask 100 .

In addition, the half-etched portions HF1 and HF2 may be formed in the frame fixing regions FA1 and FA2 and/or in the peripheral regions of the frame fixing regions FA1 and FA2. Accordingly, the stress of the deposition mask 100 generated when the deposition mask 100 is fixed to the mask frame 200 and/or when the deposition material is deposited after the deposition mask 100 is fixed to the frame is reduced. It can be uniformly dispersed. Accordingly, the deposition mask 100 can be maintained to have uniform through-holes.

The deposition mask 100 may include a plurality of effective portions AA1 , AA2 , and AA3 spaced apart in the longitudinal direction and non-effective portions UA other than the effective portions.

The effective portions AA1 , AA2 , AA3 include a plurality of small face holes V1 formed on one surface of the deposition mask 100 , a plurality of large face holes V2 formed on the other surface opposite to the one surface, and the small surface It may include a through hole TH formed by the communication portion CA to which the boundary between the ball V1 and the facing hole V2 is connected.

Also, the effective parts AA1 , AA2 , and AA3 may include an island part IS supporting between the plurality of through-holes TH.

The island part IS may be positioned between adjacent through-holes TH among the plurality of through-holes TH. That is, in the effective portions AA1 , AA2 , and AA3 of the deposition mask 100 , a region other than the through hole TH may be the island portion IS.

The island portion IS may mean a portion that is not etched on one surface 101 or the other surface 102 of the effective portion of the deposition mask 100 . In detail, the island portion IS may be an unetched region between the through hole and the through hole in the other surface 1021 on which the facing hole V2 of the effective portion of the deposition mask 100 is formed. Accordingly, the island portion IS may be disposed parallel to the one surface 101 of the deposition mask 100 .

The island part IS may be disposed on the same plane as the other surface 102 of the deposition mask 100 . Accordingly, the island portion IS may have the same thickness as at least a portion of the ineffective portion on the other surface 102 of the deposition mask 100 . In detail, the island portion IS may have the same thickness as an unetched portion of the ineffective portion on the other surface 102 of the deposition mask 100 . Accordingly, the deposition uniformity of the sub-pixels may be improved through the deposition mask 100 .

Alternatively, the island portion IS may be disposed on a plane parallel to the other surface 102 of the deposition mask 100 . Here, the parallel plane means the other surface 102 of the deposition mask 100 on which the island part IS is disposed by the etching process around the island part IS and the non-etched deposition mask ( 100) may include that the height difference of the other surface 102 is ± 1 μm or less.

The deposition mask 100 may include an ineffective portion UA disposed outside the effective portions AA1 , AA2 , and AA3 . The effective portion AA may be an inner region when the outermost through-holes for depositing an organic material among the plurality of through-holes are connected. The ineffective portion UA may be an outer region when the outermost through-holes for depositing an organic material among the plurality of through-holes are connected.

The non-effective portion UA is an area excluding the effective portions AA1 , AA2 , and AA3 of the deposition area DA and the non-deposition area NDA. The ineffective portion UA may include outer areas OA1 , OA2 , and OA3 surrounding the effective portions AA1 , AA2 , and AA3 .

The number of the outer areas OA1 , OA2 , and OA3 may correspond to the number of the effective parts AA1 , AA2 , and AA3 . That is, one effective portion may include one outer region separated by a predetermined distance from the end of the effective portion in the horizontal and vertical directions, respectively.

The first effective portion AA1 may be included in the first outer area OA1 . The first effective portion AA1 may include a plurality of through holes TH for forming a deposition material. The first outer area OA1 surrounding the outer circumference of the first effective portion AA1 may include a plurality of through holes.

For example, the plurality of through-holes included in the first outer area OA1 is to reduce etching defects of the through-holes TH located at the outermost portion of the first effective portion AA1 . Accordingly, the deposition mask 100 according to the embodiment can improve the uniformity of the plurality of through-holes located in the effective portions AA1, AA2, and AA3, thereby improving the quality of the deposition pattern manufactured. there is.

In addition, the shape of the through hole TH of the first effective portion AA1 may correspond to the shape of the through hole of the first outer area OA1 . Accordingly, the uniformity of the through hole TH included in the first effective part AA1 may be improved. For example, the shape of the through hole TH of the first effective portion AA1 and the shape of the through hole of the first outer area OA1 may be circular. However, the embodiment is not limited thereto, and the through-hole TH may have various shapes, such as a diamond pattern or an oval pattern.

The second effective portion AA2 may be included in the second outer area OA2 . The second effective part AA2 may have a shape corresponding to that of the first effective part AA1 . The second outer area OA2 may have a shape corresponding to that of the first outer area OA1 .

The second outer area OA2 may further include two through holes, respectively, in a horizontal direction and a vertical direction from a through hole located at the outermost portion of the second effective portion AA2 . For example, in the second outer area OA2 , two through-holes may be arranged in a row in the horizontal direction at positions above and below the through-holes located at the outermost side of the second effective part AA2 , respectively. For example, in the second outer area OA2 , two through-holes may be arranged in a vertical line on the left and right sides of the through-holes located at the outermost side of the second effective part AA2 , respectively. The plurality of through-holes included in the second outer area OA2 is to reduce etching defects of the through-holes located at the outermost portion of the effective portion. Accordingly, the deposition mask according to the embodiment can improve the uniformity of the plurality of through-holes located in the effective portion, thereby improving the quality of the deposition pattern to be manufactured.

The third effective portion AA3 may be included in the third outer area OA3 . The third effective portion AA3 may include a plurality of through holes for forming a deposition material. The third outer area OA3 surrounding the outer portion of the third effective portion AA3 may include a plurality of through holes.

The third effective part AA3 may have a shape corresponding to that of the first effective part AA1 . The third outer area OA3 may have a shape corresponding to that of the first outer area OA1 .

Also, the through-holes TH included in the effective portions AA1 , AA2 and AA3 may have a shape partially corresponding to the through-holes included in the ineffective portion UA. For example, the through-holes included in the effective portions AA1 , AA2 , and AA3 may have different shapes from the through-holes located at the edge portion of the ineffective portion UA. Accordingly, the difference in stress according to the position of the deposition mask 100 may be adjusted.

9 and 10 are diagrams showing a plan view of an effective part of the deposition mask 100 according to an embodiment, and FIG. 11 is a diagram illustrating another plan view of the deposition mask according to the embodiment.

9 to 11 may be plan views of any one of the first effective part AA1, the second effective part AA2, and the third effective part AA3 of the deposition mask 100 according to the embodiment. . 9 and 10 are for explaining the shape of the through-hole TH and the arrangement between the through-holes TH, and the deposition mask 100 according to the embodiment includes the through-hole TH shown in the drawing. ) is not limited to the number of

9 to 11 , the deposition mask 100 may include a plurality of through holes TH. In this case, the through-holes TH may be arranged in a line or alternately arranged depending on the direction. For example, the through-holes TH may be arranged in a line along the vertical axis and the horizontal axis, and may be arranged in a row along the vertical axis or the horizontal axis.

9 and 10 , the deposition mask 100 may include a plurality of through holes TH. In this case, the plurality of through holes TH may have a circular shape. In detail, a diameter Cx in a horizontal direction and a diameter Cy in a vertical direction of the through hole TH may correspond to each other.

The through-holes TH may be arranged in a line along the direction. For example, the through-holes TH may be arranged in a row along a vertical axis and a horizontal axis.

In detail, the first through-hole TH1 and the second through-hole TH2 may be arranged in a line along the transverse axis, and the third through-hole TH1 and the fourth through-hole TH4 may be arranged in a line along the transverse axis. there is.

Also, the first through-hole TH1 and the third through-hole TH3 may be arranged in a line along the vertical axis, and the second through-hole TH2 and the fourth through-hole TH4 may be arranged in a horizontal axis. there is.

That is, when the through-holes TH are arranged in a row on the vertical and horizontal axes, respectively, the island portion IS is positioned between two diagonally adjacent through-holes TH, which are directions intersecting both the vertical and horizontal axes. can do. That is, the island portion IS may be positioned between two adjacent through-holes TH positioned in a diagonal direction.

For example, the island portion IS may be disposed between the first through hole TH1 and the fourth through hole TH4. Also, an island portion IS may be disposed between the second through hole TH2 and the third through hole TH3. The island part IS may be respectively located in the inclination angle direction of about +45 degrees and the inclination angle direction of about -45 degrees with respect to the horizontal axis crossing the two adjacent through-holes, respectively. Here, the direction of the inclination angle of about ±45 may mean a diagonal direction between the horizontal axis and the vertical axis, and the inclination angle in the diagonal direction may be measured on the same plane of the horizontal axis and the vertical axis.

Also, referring to FIG. 11 , another deposition mask 100 according to the embodiment may include a plurality of through holes. In this case, the plurality of through-holes may have an elliptical shape. In detail, a diameter Cx in a horizontal direction and a diameter Cy in a vertical direction of the through hole TH may be different from each other. For example, the diameter Cx in the horizontal direction of the through hole may be greater than the diameter Cy in the vertical direction. However, the embodiment is not limited thereto, and the through hole may have a rectangular shape, an octagonal shape, or a rounded octagonal shape.

The through-holes TH may be arranged in a line on any one axis of the vertical axis or the horizontal axis, and may be alternately arranged on the other axis.

In detail, the first through-hole TH1 and the second through-hole TH2 may be arranged in a row along the horizontal axis, and the third through-hole TH1 and the fourth through-hole TH4 are the first through-hole TH1. and the second through-hole TH2 may be disposed to be staggered along the longitudinal axis, respectively.

When the through-holes TH are arranged in a line in any one direction of the vertical axis or the horizontal axis and are alternately arranged in the other direction, two adjacent through-holes TH1 in the other direction of the vertical axis or the horizontal axis The island part IS may be positioned between the TH2). Alternatively, the island portion IS may be positioned between the three through holes TH1 , TH2 , and TH3 positioned adjacent to each other. Of the three adjacent through holes TH1, TH2, and TH3, two through holes TH1 and TH2 are through holes arranged in a line, and the other through hole TH3 is adjacent in a direction corresponding to the line direction. In terms of location, it may mean a through hole that may be disposed in a region between the two through holes TH1 and TH2. An island portion IS may be disposed between the first through hole TH1 , the second through hole TH2 , and the third through hole TH3 . Alternatively, the island portion IS may be disposed between the second through hole TH2 , the third through hole TH3 , and the fourth through hole TH4 .

In addition, in the case of measuring the horizontal diameter (Cx) and the vertical diameter (Cy) of the reference hole, which is any one through hole, in the deposition mask 100 according to the embodiment, a through hole adjacent to the reference hole The deviation between the diameters Cx in the horizontal direction and the deviation between the diameters Cy in the vertical direction between the (TH) may be implemented as about 2% to about 10%. That is, when the size deviation between adjacent holes of one reference hole is realized to be about 2% to about 10%, uniformity of deposition can be secured. For example, a size deviation between the reference hole and the adjacent holes may be about 4% to about 9%. For example, a size deviation between the reference hole and the adjacent holes may be about 5% to about 7%. For example, a size deviation between the reference hole and the adjacent holes may be about 2% to about 5%. When the size deviation between the reference hole and the adjacent holes is less than about 2%, the moire generation rate in the OLED panel after deposition may be increased. When the size deviation between the reference hole and the adjacent holes exceeds about 10%, the occurrence rate of color unevenness in the OLED panel after deposition may increase. The average deviation of the diameter of the through hole may be ±5㎛. For example, the average deviation of the diameter of the through hole may be ±3㎛. For example, the average deviation of the diameter of the through hole may be ±1㎛. In the embodiment, the deposition efficiency can be improved by implementing a size deviation between the reference hole and the adjacent holes within ±3 μm.

The island portion IS in FIGS. 9 to 11 may mean a non-etched surface between the through holes TH on the other surface of the deposition mask 100 on which the facing hole V2 of the effective portion AA is formed. can In detail, the island portion IS is the other surface of the deposition mask 100 that is not etched except for the second etching surface ES2 and the through hole TH located in the facing hole in the effective portion AA of the deposition mask. can The deposition mask 100 of the embodiment may be for deposition of high-resolution to ultra-high-resolution OLED pixels having a resolution of 400 PPI or more, specifically 400 PPI to 800 PPI or more.

For example, the deposition mask 100 of the embodiment may be for forming a deposition pattern having a high resolution of Full-HD (High Definition) having a resolution of 400 PPI or higher. For example, the deposition mask 100 of the embodiment may be for deposition of OLED pixels in which the number of pixels in the horizontal and vertical directions is 1920*1080 or more, and 400 PPI or more. That is, one effective part included in the deposition mask 100 of the embodiment may be for forming the number of pixels with a resolution of 1920*1080 or higher.

For example, the deposition mask 100 of the embodiment may be used to form a deposition pattern having a high resolution of quad high definition (QHD) having a resolution of 500 PPI or more. For example, the deposition mask 100 of the embodiment may be for OLED pixel deposition in which the number of pixels in the horizontal and vertical directions is 2560*1440 or more and 530 PPI or more. Through the deposition mask 100 of the embodiment, the number of pixels per inch may be 530 PPI or more based on a 5.5-inch OLED panel. That is, one effective part included in the deposition mask 100 of the embodiment may be for forming the number of pixels with a resolution of 2560*1440 or higher.

For example, the deposition mask 100 of the embodiment may be for forming a deposition pattern having an ultra high resolution of Ultra High Definition (UHD) having a resolution of 700 PPI or higher. For example, in the deposition mask 100 of the embodiment, the number of pixels in the horizontal and vertical directions is 3840 * 2160 or more, and a deposition pattern having Ultra High Definition (UHD) level resolution for OLED pixel deposition of 794 PPI or more is formed. it may be for

A diameter of the through hole TH may be a width between the communication portions CA. In detail, the diameter of the through hole TH may be measured at a point where the end of the etching surface in the small face hole V1 and the end of the etching surface in the large face hole V2 meet. The diameter of the through hole TH may be measured in any one of a horizontal direction, a vertical direction, and a diagonal direction. The diameter of the through hole TH measured in the horizontal direction may be 33 μm or less. Alternatively, the diameter of the through hole TH measured in the horizontal direction may be 33 μm or less. Alternatively, the diameter of the through hole TH may be an average value of values measured in a horizontal direction, a vertical direction, and a diagonal direction.

Accordingly, the deposition mask 100 according to the embodiment may implement QHD-level resolution. For example, the diameter of the through hole TH may be about 15 μm to about 33 μm. For example, the diameter of the through hole TH may be about 19 μm to about 33 μm. For example, the diameter of the through hole TH may be about 20 μm to about 27 μm. When the diameter of the through hole TH is greater than about 33 μm, it may be difficult to implement a resolution of 500 PPI or higher. On the other hand, when the diameter of the through hole TH is less than about 15 μm, a deposition defect may occur.

9 and 10 , a pitch between two adjacent through holes TH among a plurality of through holes in the horizontal direction may be about 48 μm or less. For example, a pitch between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 20 μm to about 48 μm. For example, a pitch between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 30 μm to about 35 μm. Here, the distance may mean a distance P1 between the center of two adjacent first through-holes TH1 and the center of the second through-hole TH2 in the horizontal direction. Alternatively, the distance may mean a distance P2 between the center of two adjacent first island parts and the center of the second island part in the horizontal direction. Here, the center of the island part IS may be the center of the other non-etched surface between the four through-holes TH adjacent in the horizontal and vertical directions. For example, the center of the island portion IS is adjacent to the first through hole TH1 in the vertical direction with respect to the two first through holes TH1 and TH2 adjacent in the horizontal direction. The horizontal axis connecting the edges of the one island portion IS located in the region between the third through hole TH3 and the second through hole TH2 and the fourth through hole TH4 adjacent in the vertical direction and the vertical axis connecting the edges This may mean the point of intersection.

Also, referring to FIG. 11 , a pitch between two adjacent through holes TH among a plurality of through holes in the horizontal direction may be about 48 μm or less. For example, a pitch between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 20 μm to about 48 μm. For example, a pitch between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 30 μm to about 35 μm. Here, the distance may mean a distance P1 between the center of two adjacent first through-holes TH1 and the center of the second through-hole TH2 in the horizontal direction. In addition, the distance may mean a distance P2 between the center of two adjacent first island parts and the center of the second island part in the horizontal direction. Here, the center of the island portion IS may be a center on the other non-etched surface between one through-hole and two adjacent through-holes in the vertical direction. Alternatively, here, the center of the island portion IS may be the center of the other non-etched surface between the two through-holes and one adjacent through-hole in the vertical direction. That is, the center of the island portion IS is the center on the other non-etched surface between the three adjacent through-holes, and the three adjacent through-holes may mean that a triangular shape can be formed when the centers are connected.

The measurement direction of the diameter of the through hole TH and the measurement direction of the distance between the two adjacent through holes TH may be the same. The distance between the through-holes TH may be a measurement of a distance between two adjacent through-holes TH in a horizontal or vertical direction.

That is, the deposition mask 100 according to the embodiment may deposit an OLED pixel having a resolution of 400 PPI or higher. In detail, in the deposition mask 100 according to the embodiment, the diameter of the through-holes TH is about 33 μm or less, and the pitch between the through-holes TH is about 48 μm or less, so that the deposition mask 100 has a resolution of 500 PPI or more. OLED pixels can be deposited. In more detail, a green organic material having a resolution of 500 PPI or higher may be deposited. That is, it is possible to implement QHD-level resolution using the deposition mask 100 according to the embodiment.

A diameter of the through-hole TH and a distance between the through-holes TH may be sized to form a green sub-pixel. For example, the diameter of the through hole TH may be measured based on the green (G) pattern. Since the green (G) pattern has a low recognition rate through vision, a larger number than the red (R) pattern and the blue (B) pattern is required, and the interval between the through holes (TH) is the red (R) pattern and the blue pattern. (B) It can be narrower than the pattern. The deposition mask 100 may be an OLED deposition mask for realizing QHD display pixels.

For example, the deposition mask 100 may be for depositing at least one sub-pixel among red (R), first green (G1), blue (B), and second green (G2) sub-pixels. In detail, the deposition mask 100 may be for depositing a red (R) sub-pixel. Alternatively, the deposition mask 100 may be for depositing a blue (B) sub-pixel. Alternatively, the deposition mask 100 may be used to simultaneously form a first green (G1) sub-pixel and a second green (G2) sub-pixel.

The pixel arrangement of the organic light emitting diode display may be arranged in the order of 'red (R) - first green (G1) - blue (B) - second green (G2)' (RGBG). In this case, red (R)-first green (G1) may form one pixel RG, and blue (B)-second green (G2) may form another pixel (BG). In the organic light emitting display device having such an arrangement, since the deposition interval of the green light emitting organic material is narrower than that of the red light emitting organic material and the blue light emitting organic material, a deposition mask 100 having the same shape as that of the present invention may be required.

In addition, in the deposition mask 100 according to the embodiment, the diameter of the through hole TH may be about 20 μm or less in the horizontal direction. Accordingly, the deposition mask 100 according to the embodiment can implement UHD level resolution. For example, in the deposition mask 100 according to the embodiment, the diameter of the through hole TH is about 20 μm or less and the distance between the through holes is about 32 μm or less, so that the resolution of 800 PPI is OLED pixels can be deposited. That is, UHD level resolution can be realized by using the deposition mask according to the embodiment.

A diameter of the through-hole and an interval between the through-holes may be sized to form a green sub-pixel. The deposition mask may be an OLED deposition mask for realizing UHD display pixels.

FIG. 12 is a diagram illustrating each of the cross-sections overlaid in order to explain the height difference and size between the cross-section in the A-A' direction and the cross-section in the B-B' direction of FIGS. 9 and 10 .

First, a cross section in the direction A-A' of FIGS. 9 and 10 will be described. A-A' direction is a cross-section crossing a central area between two adjacent first through-holes TH1 and TH3 in a vertical direction. That is, the cross section in the A-A' direction may not include the through hole TH.

In the cross section in the A-A' direction, the island portion IS, which is the other surface of the deposition mask that is not etched, may be positioned between the etch surface ES2 in the large hole and the etch surface ES2 in the large hole. Accordingly, the island portion IS may include a surface parallel to the unetched surface of the deposition mask. Alternatively, the island portion IS may include a surface that is the same as or parallel to the other non-etched surface of the deposition mask 100 .

Next, the cross section in the B-B' direction of FIGS. A and B will be described. The direction B-B' is a cross-section crossing the center of each of the two adjacent first through-holes TH1 and TH2 in the horizontal direction. That is, the cross section in the B-B' direction may include a plurality of through-holes TH.

One rib RB may be positioned between the third and fourth through-holes TH3 and TH4 adjacent to each other in the B-B' direction. Another rib RB may be positioned between the fourth through-hole TH4 and the fourth through-hole in the horizontal direction, but between the third through-hole TH3 and the fifth through-hole located in the opposite direction. One through hole TH may be positioned between the one rib and the other rib. That is, one through hole TH may be positioned between two adjacent ribs RB in the horizontal direction.

In addition, in the cross section in the B-B' direction, the rib RB, which is a region in which the etching surface ES2 in the facing hole and the etching surfaces ES2 in the adjacent facing hole are connected to each other, may be located. Here, the rib RB may be a region in which a boundary between two adjacent facing holes is connected. Since the rib RB is an etched surface, a thickness of the rib RB may be smaller than that of the island portion IS. For example, the island portion IS may have a width of about 2 μm or more. That is, a width of a portion remaining unetched on the other surface in a direction parallel to the other surface may be about 2 μm or more. When the width of one end and the other end of one island portion IS is about 2 μm or more, the total volume of the deposition mask 100 may be increased. The deposition mask 100 having such a structure ensures sufficient rigidity with respect to the tensile force applied in the organic material deposition process, etc., and may be advantageous in maintaining the uniformity of the through-holes.

13 is a view showing a cross-sectional view taken in the direction B-B' of FIG. 9 or 10 . Referring to FIG. 13, an enlarged cross section of the rib RB of the effective area and the through hole TH between the ribs RB according to the cross section B-B' of FIGS. 9 and 10 will be described. do.

In the deposition mask 100 according to the embodiment, the thickness in the effective portion AA in which the through-hole TH is formed by etching and the thickness in the non-etched effective portion UA may be different from each other. In detail, the thickness of the rib RB may be smaller than the thickness of the non-etched portion UA.

In the deposition mask 100 according to the embodiment, the thickness of the ineffective portion UA may be greater than the thickness of the effective portion AA1 , AA2 , and AA3 . In this case, the island portion IS is an unetched area, and the island portion IS may correspond to a maximum thickness of the ineffective portion UA to the non-deposition area NDA. For example, in the deposition mask 100 , the maximum thickness of the non-effective portion UA to the non-deposition area NDA may be about 30 μm or less. Accordingly, the maximum thickness of the island portion IS may be about 30 μm or less, and the thickness of the effective portions AA1 , AA2 , and AA3 excluding the island portion IS is greater than the thickness of the ineffective portion UA. can be small In detail, in the deposition mask 100 , the maximum thickness of the non-effective portion UA to the non-deposition area NDA may be about 25 μm or less. For example, in the deposition mask of the embodiment, the maximum thickness of the non-effective portion to the non-deposition region may be about 15 μm to about 25 μm. Accordingly, the maximum thickness of the island portion IS may be about 15 μm to about 25 μm. When the maximum thickness of the non-effective portion to the non-deposition region of the deposition mask according to the embodiment exceeds about 30 μm, the thickness of the metal plate 10 , which is the raw material of the deposition mask 100 , becomes thick, so that a fine penetration It may be difficult to form the hole TH. In addition, when the maximum thickness of the non-effective portion UA to the non-deposition area NDA of the deposition mask 100 is less than about 15 μm, it may be difficult to form a through hole of a uniform size because the thickness of the metal plate is thin. .

The maximum thickness T3 measured at the center of the rib RB may be about 15 μm or less. For example, the maximum thickness T3 measured at the center of the rib RB may be about 7 μm to about 10 μm. For example, the maximum thickness T3 measured at the center of the rib RB may be about 6 μm to about 9 μm. When the maximum thickness T3 measured at the center of the rib RB exceeds about 15 μm, it may be difficult to form an OLED deposition pattern having a high resolution of 500 PPI or higher. In addition, when the maximum thickness T3 measured at the center of the rib RB is less than about 6 μm, it may be difficult to form a uniform deposition pattern.

The height H1 of the small face hole of the deposition mask 100 may be about 0.2 to about 0.4 times the maximum thickness T3 measured at the center of the rib RB. For example, the maximum thickness T3 measured at the center of the rib RB is about 7 μm to about 9 μm, and the height H1 between one surface of the deposition mask 100 and the communication part is about 1.4. μm to about 3.5 μm. The height H1 of the small face hole of the deposition mask 100 may be about 3.5 μm or less. For example, the height of the small face hole V1 may be about 0.1 μm to about 3.4 μm. For example, the height of the face hole V1 of the deposition mask 100 may be about 0.5 μm to about 3.2 μm. For example, the height of the face hole V1 of the deposition mask 100 may be about 1 μm to about 3 μm. Here, the height may be measured in the thickness measurement direction of the deposition mask 100 , that is, the depth direction, and may be a measurement of the height from one surface of the deposition mask 100 to the communication portion. In detail, it may be measured in the z-axis direction forming 90 degrees to the horizontal direction (x-direction) and the vertical direction (y-direction) described above in the plan view of FIGS. 8, 9 or 10 .

When the height between the one surface of the deposition mask 100 and the communication part is more than about 3.5 μm, a deposition defect may occur due to a shadow effect in which the deposition material spreads to an area larger than the area of the through hole during OLED deposition. can

In addition, the pore diameter W1 of the mask 100 for deposition, on which the small face hole V1 is formed, and the pore diameter W2 at the communication portion, which is the boundary between the small face hole V1 and the face hole V2, are mutually may be similar or different. The hole diameter W1 of the mask 100 for deposition on one surface where the small surface holes V1 are formed may be larger than the hole diameter W2 of the communication part.

For example, the difference between the hole diameter W1 on one surface of the deposition mask 100 and the hole diameter W2 on the communication part may be about 0.01 μm to about 1.1 μm. For example, a difference between the pore diameter W1 on one surface of the deposition mask and the pore diameter W2 on the communication portion may be about 0.03 μm to about 1.1 μm. For example, a difference between the pore diameter W1 on one surface of the deposition mask and the pore diameter W2 on the communication portion may be about 0.05 μm to about 1.1 μm.

When the difference between the pore diameter W1 on one surface of the deposition mask 100 and the pore diameter W2 on the communication portion is greater than about 1.1 μm, deposition failure may occur due to a shadow effect.

In addition, one end E1 of the face-to-face hole V2 located on the other surface 102 opposite to the one surface 101 of the deposition mask 100 and between the small face hole V1 and the face-to-face hole V2 The inclination angle θ1 connecting one end E2 of the communication part may be 40 degrees to 55 degrees. Accordingly, a high-resolution deposition pattern of 400 PPI or higher, specifically 500 PPI or higher, may be formed, and the island portion IS may be present on the other surface 102 of the deposition mask 100 .

14 is a diagram illustrating a manufacturing process of the deposition mask 100 according to the embodiment.

Referring to FIG. 14 , the manufacturing process of the deposition mask 100 according to the embodiment includes preparing a metal plate 10 , forming a through hole in the metal plate 10 using a photoresist layer, and the photo The method may include removing the resist layer to form a deposition mask including the through hole.

In the step of preparing the metal plate 10 , the metal plate 10 may be manufactured by a cold rolling method. In detail, the metal plate 10 may be formed through melting, forging, hot rolling, normalizing, cold rolling, and annealing processes.

The metal plate 10 may include a nickel (Ni) alloy. In detail, the metal plate 10 may include an iron (Fe) and nickel (Ni) alloy. In more detail, the metal plate 10 may include iron (Fe), nickel (Ni), oxygen (O), and chromium (Cr). For example, the metal plate 10 may contain about 60 wt% to about 65 wt% of iron, and about 35 wt% to about 40 wt% of nickel. In addition, the metal plate 10 is a small amount of carbon (C), silicon (Si), sulfur (S), phosphorus (P), manganese (Mn), titanium (Ti), cobalt (Co), copper (Cu), At least one element selected from among silver (Ag), vanadium (V), niobium (Nb), indium (In), and antimony (Sb) may be further included. Here, a small amount may mean 1 wt% or less. That is, the metal plate 10 may include Invar.

In the annealing process, the surface atomic concentration of the metal plate 10 may be changed. For example, the metal plate 10 may include an outer portion SP including a surface and an inner portion IP other than the outer portion SP, the outer portion SP of the metal plate 10 being The atomic concentration of may be different from the atomic concentration of the inner portion IP of the metal plate 10 .

In detail, in the annealing process, the metal plate 10 may be heat-treated at a temperature of about 550° C. to about 650° C. for about 45 seconds to about 75 seconds. Preferably, in the annealing process, the metal plate 10 may be heat treated at a temperature of about 600° C. for about 60 seconds.

The annealing process may be performed in an inert gas atmosphere. For example, the annealing process may be performed in an inert gas atmosphere such as helium, nitrogen, and argon atmosphere. Here, the atmosphere may mean an atmosphere in which an inert gas is present in an amount of about 90% or more.

Atoms on the surface of the metal plate 10 may be rearranged by the annealing process. In detail, the atomic concentration of iron, nickel, oxygen, etc. on the surface of the metal plate 10 may be changed by the annealing process, and an oxide film may be formed on the surface to prevent corrosion and corrosion in advance.

Accordingly, the atomic concentration of iron, nickel, oxygen, etc. on the surface of the metal plate 10 may be changed. In detail, the maximum atomic concentration value of nickel may be greater than that of the inner portion IP of the metal plate 10 in a depth range of about 30 nm or less from the surface of the metal plate 10 , and in particular, about about 30 nm of the outer portion SP In the depth range of 10 nm, the nickel atom concentration value may have a maximum value. In addition, the minimum value of the oxygen atom concentration in the depth range of about 10 nm or less from the surface of the metal plate 10 may be about 10 at% or less.

That is, the concentration of oxygen atoms on the surface of the metal plate 10 can be lowered by the annealing process, so that the thickness of the oxide layer formed can be minimized. In addition, the surface nickel atom concentration can be increased by the annealing process, so that it can have improved corrosion resistance.

In addition, the step of preparing the metal plate 10 may further include a thickness reduction step according to the target thickness of the metal plate 10 . The step of reducing the thickness may be a step of forming a required thickness by rolling or etching more than the metal plate 10 that has undergone the rolling process.

For example, a metal plate 10 having a thickness of about 30 μm may be required to manufacture a deposition mask for realizing a resolution of 400 PPI or higher, and about 20 μm to manufacture a deposition mask for realizing a resolution of 500 PPI or higher. A metal plate 10 having a thickness of about 30 μm to about 30 μm may be required, and a metal plate 10 having a thickness of about 15 μm to about 20 μm may be required to manufacture a deposition mask capable of realizing a resolution of 800 PPI or higher.

In addition, the step of preparing the metal plate 10 may optionally further include a surface treatment step for improving the etch factor. In detail, a nickel alloy such as Invar may have a high etch rate in the initial stage of etching, so that the etch factor of the small face hole V1 may be reduced. Accordingly, it may be difficult to form the through-hole TH having a fine size and the through-hole TH at a uniform position.

Accordingly, a surface treatment layer for preventing rapid etching may be formed on the surface of the metal plate 10 . The surface treatment layer may be an etch barrier layer having a slower etching rate than that of the metal plate 10 . The surface treatment layer may have a different crystal plane and crystal structure from the metal plate 10 . For example, since the surface treatment layer includes elements different from those of the metal plate 10 , a crystal plane and a crystal structure may be different from each other.

For example, in the same corrosion environment, the surface treatment layer may have a different corrosion potential from the metal plate 10 . For example, when treated with the same etchant at the same temperature for the same time, the surface treatment layer may have a different corrosion current or corrosion potential from that of the metal plate 10 .

The metal plate 10 may include a surface treatment layer or a surface treatment portion on one side and/or both sides, the whole and/or the effective area. The surface treatment layer or the surface treatment unit may include an element different from that of the metal plate 10 , or may include a metal element having a slow corrosion rate in a greater content than that of the metal plate 10 .

Next, a step of forming a through hole in the metal plate 10 using a photoresist layer may be performed. The forming of the through hole includes forming a first groove for forming a small face hole V1 on one surface of the metal plate 10 and forming a large face hole V2 on the other surface of the metal plate 10. The method may include forming a second groove to form a through hole.

A photoresist layer may be disposed on one surface of the metal plate 10 to form the small face holes V1 in the metal plate 10 . A patterned first photoresist layer PR1 may be disposed on one surface of the metal plate 10 by exposing and developing the photoresist layer. In addition, on the other surface opposite to one surface of the metal plate 10, an etch-resisting layer such as a coating layer or a film layer for inhibiting etching may be disposed.

Next, a first groove may be formed on one surface of the metal plate 10 by half-etching the open portion of the first photoresist layer PR1 . In detail, the open portion of the first photoresist layer PR1 may be exposed to an etchant or the like, so that etching may occur in an open portion of one surface of the metal plate 10 in which the first photoresist layer PR1 is not disposed. .

The forming of the first groove may be a step of etching the metal plate 10 having a thickness T1 of about 20 μm to about 30 μm until it is about 1/2 thick. The depth of the first groove formed through this step may be about 10 μm to 15 μm. That is, the thickness T2 of the metal plate measured at the center of the first groove formed after this step may be about 10 μm to about 15 μm.

The forming of the first groove may be performed by anisotropic etching or a semi-additive process (SAP). In detail, in order to half-etch the open portion of the first photoresist layer PR, an anisotropic etching or a semi-addition method may be used. Accordingly, in the groove formed through the half etching, the etching rate in the depth direction (the b direction) may be faster than the speed of the side etching (a direction) than the isotropic etching.

The etch factor of the face hole V1 may be 2.0 to 3.0. For example, the etching factor of the small face hole V1 may be 2.1 to 3.0. For example, the etch factor of the small face hole V1 may be 2.2 to 3.0.

Here, the etching factor is the depth (B) of the etched small face hole / the width (A) of the photoresist layer extending from the island portion IS on the small face hole and protruding in the center direction of the through hole TH (Etching Factor = B/A). A denotes an average value of the width of one side of the photoresist layer protruding on the one surface hole and the width of the other side opposite to the one side.

Next, a photoresist layer may be disposed to form a facing hole V2 on the other surface of the metal plate 10 . A patterned second photoresist layer PR2 may be disposed on the other surface of the metal plate 10 by exposing and developing the photoresist layer. A patterned second photoresist layer PR2 having an open portion to form a facing hole V2 may be disposed on the other surface of the metal plate 10 . An etch-stop layer such as a coating layer or a film layer for inhibiting etching may be disposed on one surface of the metal plate 10 .

The open portion of the second photoresist layer PR2 may be exposed to an etchant or the like, and etching may occur in the open portion of the other surface of the metal plate 10 in which the second photoresist layer PR2 is not disposed. The other surface of the metal plate 10 may be etched by anisotropic etching or isotropic etching.

As the open portion of the second photoresist layer PR2 is etched, the groove on one surface of the metal plate 10 may be connected to the facing hole V2 to form a through hole.

In the step of forming the through-hole, the step of forming the second groove for forming the face-to-face hole V2 is performed after the step of forming the first groove for forming the small-faced hole V1 to form the through-hole. It may be a step of forming.

Alternatively, in the step of forming the through hole, the step of forming the first groove for forming the small face hole V1 is performed after the step of forming the second groove for forming the face hole V2. It may be a step of forming a hole.

Alternatively, in the step of forming the through-hole, the step of forming a first groove for forming the face-to-face hole V1 and the step of forming a second groove for forming the face-to-face hole V2 are simultaneously performed. It may be a step of forming the through hole TH.

Next, by removing the photoresist layer, the facing hole (V2) formed on the one surface, the small surface hole (V1) formed on the other surface opposite to the one surface, the facing hole (V2), and the small surface hole (V1) The deposition mask 100 may be formed through the step of forming the deposition mask 100 including the through hole TH formed by the communication portion to which the boundary of the .

The deposition mask 100 formed through the above steps may include the same material as the metal plate 10 . For example, a region of the deposition mask 100 in which surface etching is not performed may include a material having the same composition as that of the outer portion SP of the metal plate 10 . That is, the island portion IS of the deposition mask 100 may include a material having the same composition as that of the outer portion SP. In addition, when the deposition mask 100 selectively further includes a surface treatment step, the island portion IS of the deposition mask 100 may further include the aforementioned surface treatment layer.

In the deposition mask 100 formed through the above steps, the maximum thickness at the center of the ribs RB may be smaller than the maximum thickness at the non-etched area. For example, the maximum thickness at the center of the ribs RB may be about 15 μm. For example, the maximum thickness at the center of the ribs RB may be less than about 10 μm. However, the maximum thickness in the non-effective region of the deposition mask 100 may be about 20 μm to about 30 μm, and may be about 15 μm to about 25 μm. That is, the maximum thickness in the ineffective region of the deposition mask 100 may correspond to the thickness of the metal plate 10 prepared in the step of preparing the metal plate 10 .

15 and 16 are diagrams illustrating a deposition pattern formed through a deposition mask according to an embodiment.

Referring to FIG. 15 , in the deposition mask 100 according to the embodiment, the height H1 between one surface of the deposition mask 100 in which the small face hole V1 is formed and the communication part may be about 3.5 μm or less. For example, the height H1 may be about 0.1 μm to about 3.4 μm. For example, the height H1 may be about 0.5 μm to about 3.2 μm. For example, the height H1 may be about 1 μm to about 3 μm.

Accordingly, since the distance between the surface 101 of the deposition mask 100 and the substrate on which the deposition pattern is disposed may be close, deposition defects caused by the shadow effect may be reduced. For example, when the R, G, and B patterns are formed using the deposition mask 100 according to the embodiment, it is possible to prevent a defect in which different deposition materials are deposited in a region between two adjacent patterns. In detail, as shown in FIG. 16, when the patterns are formed in the order of R, G, and B from the left, it is possible to prevent the R pattern and the G pattern from being deposited as a shadow effect in the region between the R pattern and the G pattern. can

In addition, in the deposition mask 100 , the atomic concentration of the outer portion SP and the atomic concentration of the inner portion IP of the deposition mask 100 may be different from each other.

In detail, in the deposition mask 100 , the maximum nickel atomic concentration of the outer portion SP may be greater than the maximum nickel atomic concentration of the inner portion IP, and is about 10 nm or less from the surface of the deposition mask 100 . The minimum value of the oxygen atom concentration in the depth range may be about 10 at% or less. The outer portion SP of the deposition mask 100 may refer to the outer portion SP of the metal plate 10 in which an etching process such as half etching has not been performed. In detail, the outer portion SP may mean an area in which an etching process is not performed among the deposition area DA and the non-deposition area NDA. In particular, the outer portion SP in the deposition area DA may be a surface on which an ineffective portion UA and an island portion IS are formed on one surface of the deposition mask 100 on which surface etching is not performed, Among the other surfaces of the deposition mask 100 , it may mean a surface on which the small surface holes V1 are not formed.

That is, in the deposition mask 100 according to the embodiment, the nickel atom concentration of the outer part SP is high and the oxygen atomic concentration is low, so the steps of manufacturing the deposition mask 100 and the deposition mask 100 are Corrosion of the surface of the deposition mask 100 can be effectively prevented during repeated pattern deposition using In detail, it is possible to prevent the island portion IS from being corroded. Accordingly, the deposition mask 100 can secure sufficient rigidity with respect to the tensile force applied during the organic material deposition process, so that the organic material can be uniformly deposited.

In addition, since the atomic concentration of chromium is very small, 0.03 at% or less, it is possible to prevent segregation and the formation of a second precipitated phase by the chromium, and the small-faced pores (V1), large-faced pores (V2) and penetrations can be prevented. Since the hole TH can be formed more precisely and uniformly, deposition defects can be minimized.

Features, structures, effects, etc. described in the above-described embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, features, structures, effects, etc. illustrated in each embodiment can be combined or modified for other embodiments by those of ordinary skill in the art to which the embodiments belong. Accordingly, the contents related to such combinations and modifications should be interpreted as being included in the scope of the present invention.

In addition, although the embodiments have been described above, these are merely examples and do not limit the present invention, and those of ordinary skill in the art to which the present invention pertains are exemplified above in a range that does not depart from the essential characteristics of the present embodiment. It can be seen that various modifications and applications that have not been made are possible. For example, each component specifically shown in the embodiments may be implemented by modification. And the differences related to these modifications and applications should be construed as being included in the scope of the present invention defined in the appended claims.

Claims (10)

A metal plate including a deposition region and a non-deposition region other than the deposition region,
The metal plate has a thickness of 30 μm or less,
The deposition region includes a plurality of effective portions spaced apart in the longitudinal direction and ineffective portions other than the effective portion,
The effective part is
a plurality of small face holes formed on one surface of the metal plate;
a plurality of facing holes formed on the other surface opposite to the one surface;
a plurality of through-holes respectively communicating the face-to-face holes and the face-to-face holes; and
It includes an island portion formed between the adjacent through-holes,
The metal plate includes iron (Fe), nickel (Ni), oxygen (O) and chromium (Cr), and the atomic concentration of chromium (Cr) is invar of 0.03 at% or less,
wherein the metal plate comprises an outer portion comprising a surface and an inner portion other than the outer portion;
In a depth range from the surface of at least one of the non-deposition region, the ineffective portion, and the island portion to 14 nm or less in the direction of the inner portion, the maximum atomic concentration of iron (Fe) is 60 at% or less, and the nickel ( The maximum atomic concentration of Ni) is 40 at% to 45 at%, and the minimum atomic concentration of oxygen (O) is 10 at% or less. The method of claim 1,
and wherein the outer portion has a depth range of 30 nm or less in a direction from the surface to the inner portion, wherein the maximum atomic concentration of nickel in the outer portion and the inner portion is different. The method of claim 1,
in a depth range of up to 14 nm from the surface in the direction of the inner portion,
The maximum atomic concentration of the nickel (Ni) is 42 at% to 44 at% of the deposition mask. The method of claim 1,
wherein the nickel has a maximum atomic concentration value in a depth range from a depth of 3 nm in a direction from the surface to the inner portion to 9 nm in a direction from the surface to the inner portion. The method of claim 1,
in a depth range of up to 14 nm from the surface in the direction of the inner portion,
The minimum atomic concentration of oxygen (O) is 5 at% or less for deposition mask. The method of claim 1,
A deposition mask having a resolution of 500 PPI or higher, in which a diameter of the through-holes is 33 μm or less, and an interval between the through-holes is 48 μm or less. delete delete delete delete

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