KR102361452B1 - A deposition mask of metal material for oled pixel deposition and oled display panel fabrication method - Google Patents

Abstract

In the metal material deposition mask for deposition of an OLED pixel according to an embodiment, the deposition mask includes a deposition part and a non-evaporation part, and the deposition part includes a plurality of effective parts and the effective part which are spaced apart from each other in the longitudinal direction. a plurality of small face holes formed on one surface of the metal material; a plurality of facing holes formed on the other surface opposite to the one surface of the metal material; a plurality of through-holes respectively communicating the face-to-face hole and the face-to-face hole; and an island portion formed on the other surface of the metal material and positioned between the plurality of through holes, wherein the facing hole includes, with respect to the one surface, a first cross-sectional inclination angle in a first direction and a first inclination angle in the first direction and and a second cross-sectional inclination angle in a second intersecting direction, wherein the first cross-sectional inclination angle and the second cross-sectional inclination angle are within 35° to 55°, and the first cross-sectional inclination angle is smaller than the second cross-sectional inclination angle.

Description

Metal deposition mask and OLED panel manufacturing method for OLED pixel deposition

This embodiment relates to a metal deposition mask and an OLED panel manufacturing method for OLED pixel deposition that can improve deposition performance while preventing length deformation by securing rigidity.

A display device is applied to and used in various devices. For example, the display device is applied and used not only in small devices such as smart phones and tablet PCs, but also in large devices such as TVs, monitors, and public displays (PDs). In particular, in recent years, the demand for ultra-high resolution UHD (UHD, Ultra High Definition) of 500 PPI (Pixel Per Inch) or more is increasing, and high-resolution display devices are being applied to small devices and large devices. Accordingly, interest in technology for implementing low power and high resolution is increasing.

A generally used display device may be largely divided into a liquid crystal display (LCD) and an organic light emitting diode (OLED) according to a driving method.

The LCD is a display device driven by using liquid crystal, and has a structure in which a light source including a Cold Cathode Fluorescent Lamp (CCFL) or a Light Emitting Diode (LED) is disposed under the liquid crystal, and on the light source It is a display device driven by controlling the amount of light emitted from the light source using the disposed liquid crystal.

In addition, the OLED is a display device driven by using an organic material, and a separate light source is not required, and the organic material itself serves as a light source and can be driven with low power. In addition, OLED is attracting attention as a display device that can replace LCD because it can express infinite contrast ratio, has a response speed of about 1000 times faster than LCD, and has an excellent viewing angle.

In particular, in the OLED, the organic material included in the light emitting layer may be deposited on a substrate by a deposition mask called a fine metal mask (FMM), and the deposited organic material corresponds to a pattern formed on the deposition mask. It is formed in a pattern that can be used to function as a pixel. The deposition mask is generally made of an Invar alloy metal plate containing iron (Fe) and nickel (Ni). In this case, a through hole passing through the first surface and the other surface may be formed on one surface and the other surface of the metal plate, and the through hole may be formed at a position corresponding to the pixel pattern. Accordingly, an organic material such as red, green, and blue may pass through the through hole of the metal plate to be deposited on the substrate, and a pixel pattern may be formed on the substrate.

In this case, when the inclination angle of the facing hole in the through hole formed in the deposition mask is smaller than a predetermined range, the thickness of the rib connecting the through holes is reduced. Accordingly, the rigidity of the deposition mask is lowered, and thus, length deformation of the deposition mask such as tensile strain, total pitch strain, and deflection occurs. In addition, the shape of the mask pattern and the uniformity of the position of the through-holes may be deteriorated according to the length deformation, and there is a problem in that the diameter of the through-holes is not uniform, so that the pattern deposition efficiency may be lowered, and there is a problem that a deposition defect occurs.

In addition, when the inclination angle of the facing hole in the through hole formed in the deposition mask is greater than a predetermined range, there is a problem in that some of the organic material does not pass through the through hole when the organic material is deposited on the substrate. In detail, in a region that does not overlap with the organic material deposition container or a through hole positioned in a direction perpendicular to the moving direction of the organic material deposition container, the movement distance of the organic material is longer than the moving distance of the organic material. There is a problem in that it does not pass through and is deposited on the inner surface of the island portion formed between adjacent through-holes or the facing hole of the through-hole.

In particular, there is a need for a mask for deposition of a new structure capable of forming a pattern of high resolution or ultra-high resolution (UHD level) of 500 PPI or more without deposition defects and preventing various length variations, and a method for manufacturing the same.

The embodiment aims to provide a deposition mask capable of minimizing length deformation such as total pitch deformation or sagging during tension by securing rigidity.

In addition, the embodiment intends to provide a deposition mask capable of uniformly depositing an OLED image pattern regardless of a position of a through hole while securing rigidity.

Technical tasks to be achieved in the proposed embodiment are not limited to the technical tasks mentioned above, and other technical tasks not mentioned are clear to those of ordinary skill in the art to which the proposed embodiment belongs from the description below. can be understood clearly.

In the metal material deposition mask for deposition of an OLED pixel according to an embodiment, the deposition mask includes a deposition part and a non-evaporation part, and the deposition part includes a plurality of effective parts and the effective part which are spaced apart from each other in the longitudinal direction. a plurality of small face holes formed on one surface of the metal material; a plurality of facing holes formed on the other surface opposite to the one surface of the metal material; a plurality of through-holes respectively communicating the face-to-face hole and the face-to-face hole; and an island portion formed on the other surface of the metal material and positioned between the plurality of through holes, wherein the facing hole includes, with respect to the one surface, a first cross-sectional inclination angle in a first direction and a first inclination angle in the first direction and and a second cross-sectional inclination angle in a second intersecting direction, wherein the first cross-sectional inclination angle and the second cross-sectional inclination angle are within 35° to 55°, and the first cross-sectional inclination angle is smaller than the second cross-sectional inclination angle.

The effective portion may include a rib having a height lower than that of the island portion, and the rib may include: a first rib positioned between through holes adjacent to each other in the first direction among the plurality of through holes; and a second rib positioned between through holes adjacent to each other in the second direction among the plurality of through holes, wherein a height of the first rib is smaller than a height of the second rib.

Also, a distance from the center of the through hole to the first rib is greater than a distance from the center of the through hole to the second rib.

In addition, the carding hole includes a first height in a first cross-section in the first direction and a second height in a second cross-section in the second direction, wherein the first height is greater than the second height. small.

Further, the second height is 3.5 µm to 4.0 µm, and the first height is 2.5 µm to 3.0 µm.

In addition, the first inclination angle of the cross-section is 35° to 45°, and the second inclination angle is 45° to 55°.

In addition, the effective portion includes a central area in which the through hole is disposed and an outer area disposed outside the central area, wherein the outer area has a first cross-sectional inclination angle in the first direction with respect to the one surface and , a second cross-sectional inclination angle in the second direction, and a through hole including a third cross-sectional inclination angle in the first direction, wherein the third cross-sectional inclination angle is greater than the first cross-sectional inclination angle.

In addition, the first cross-sectional inclination angle of the through hole of the outer region is a cross-sectional inclination angle in the first direction toward the central region, and the third cross-sectional inclination angle of the through hole of the outer region is opposite to the direction toward the central region is the angle of inclination of the cross-section in the first direction toward the ineffective portion that is the direction.

Also, a width of the island portion in the first direction is greater than a width in the second direction.

In addition, the through-holes have a resolution of 500 PPI or higher, with a diameter of 33 μm or less and an interval between the through-holes of 48 μm or less.

Also, the first direction is a tensile direction.

In addition, the second direction is a direction perpendicular to the longitudinal direction.

Also, the first direction is the same as the longitudinal direction.

According to an embodiment, the facing hole of the through-hole has a first inclination angle in the longitudinal direction and a second inclination angle in the width direction that is larger than the first inclination angle in the cross-section, and the first inclination angle and the second inclination angle are The thickness of the ribs disposed in the longitudinal direction may be increased by the difference between the two cross-sectional inclination angles, and accordingly, the rigidity of the deposition mask may be secured. In addition, as the rigidity of the deposition mask is secured, length deformation can be minimized, and thus the pattern deposition efficiency can be improved by increasing the uniformity of the shape of the mask pattern and the position of the through hole.

In addition, according to the embodiment, by reducing the inclination angle of the facing hole of the through hole in a direction perpendicular to the movement direction of the organic material deposition container, the OLED pixel pattern can be uniformly deposited in all areas regardless of the position of the through hole.

1 is a perspective view illustrating an organic material deposition apparatus including a deposition mask according to an embodiment.
2 is a cross-sectional view illustrating an organic material deposition apparatus including a deposition mask 100 according to an embodiment.
3 is a diagram illustrating that the deposition mask 100 according to the embodiment is tensioned to be mounted on the mask frame 200 .
FIG. 4 is a diagram illustrating that a plurality of deposition patterns are formed on the substrate 300 through a plurality of through holes of the deposition mask 100 .
5 is a diagram illustrating a plan view of the deposition mask 100 according to the embodiment.
6 is a plan view illustrating an effective part of the deposition mask 100 according to the first embodiment.
7 is a diagram illustrating another plan view of a deposition mask according to an embodiment.
8 is a diagram illustrating another plan view of a deposition mask according to an embodiment.
FIG. 9 is a diagram illustrating each of the cross-sections overlaid to explain the height difference and size between the cross-section in the AA′ direction and the cross-section in the BB′ direction of FIG. 6 .
10 is a view showing a cross-sectional view taken in the BB' direction of FIG.
11 is a view showing a cross-sectional view taken in the direction CC′ of FIG. 6 .
12 is a view showing a cross-sectional view taken in the DD′ direction of FIG. 6 .
13 is a plan view of an effective portion of the deposition mask 100 according to the second embodiment.
FIG. 14 is a cross-sectional view illustrating the second through-hole in FIG. 13 , and FIG. 15 is a cross-sectional view illustrating the third through-hole in FIG. 13 .
16 is a diagram illustrating a method of manufacturing a deposition mask 100 according to an embodiment.
17 and 18 are diagrams illustrating a deposition pattern formed through a deposition mask according to an embodiment.

Hereinafter, the configuration and operation according to the present invention will be described in detail with reference to the accompanying drawings. In the description with reference to the accompanying drawings, the same components are given the same reference, regardless of the reference numerals, and redundant description thereof will be omitted. Terms such as first, second, etc. may be used to describe various elements, but the elements should not be limited by the terms. The above terms are used only for the purpose of distinguishing one component from another.

In addition, in the description of the embodiments, each layer (film), region, pattern or structure is “above/on” or “below/under” the substrate, each layer (film), region, pad or patterns. The description of being formed on “under)” includes all those formed directly or through another layer. The standards for the upper/above or lower/lower layers of each layer will be described with reference to the drawings.

In addition, when it is said that a certain part is "connected" with another part, it includes not only the case where it is "directly connected" but also the case where it is "indirectly connected" with another member interposed therebetween. In addition, when a part "includes" a certain component, this means that other components may be further provided without excluding other components unless otherwise stated.

Hereinafter, a deposition mask according to an embodiment will be described with reference to the drawings.

1 to 4 are conceptual views for explaining a process of depositing an organic material on a substrate 300 using a deposition mask 100 according to an embodiment.

1 is a perspective view illustrating an organic material deposition apparatus including a deposition mask according to an embodiment, FIG. 2 is a cross-sectional view illustrating an organic material deposition apparatus including a deposition mask 100 according to an embodiment, and FIG. 3 is an embodiment It is a diagram illustrating that the deposition mask 100 according to the example is tensioned to be mounted on the mask frame 200 . Also, FIG. 4 is a diagram illustrating that a plurality of deposition patterns are formed on the substrate 300 through a plurality of through holes of the deposition mask 100 .

1 to 4 , the organic material deposition apparatus may include a deposition mask 100 , a mask frame 200 , a substrate 300 , an organic material deposition container 400 , and a vacuum chamber 500 .

The deposition mask 100 may include a metal. For example, the deposition mask may include iron (Fe) and nickel (Ni).

The deposition mask 100 may include a plurality of through holes TH in an effective portion for deposition. The deposition mask 100 may be a deposition mask substrate including a plurality of through holes TH. In this case, the through hole may be formed to correspond to the pattern to be formed on the substrate. The deposition mask 100 may include an ineffective portion other than the effective portion including the deposition area.

The mask frame 200 may include an opening 205 . The plurality of through holes of the deposition mask 100 may be disposed on a region corresponding to the opening 205 of the mask frame 200 . Accordingly, the organic material supplied to the organic material deposition container 400 may be deposited on the substrate 300 . The deposition mask 100 may be disposed and fixed on the mask frame 200 . For example, the deposition mask 100 may be tensioned with a constant tensile force and fixed on the mask frame 200 by welding.

That is, the mask frame 200 includes a plurality of frames 201 , 202 , 203 , and 204 surrounding the opening 205 . The plurality of frames 20 , 202 , 203 , and 204 may be connected to each other. The mask frame 200 faces each other in the X direction, includes a first frame 201 and a second frame 202 extending along the Y direction, faces each other in the Y direction, and extends along the X direction. a third frame 203 and a fourth frame 204 . The first frame 201 , the second frame 202 , the third frame 203 , and the fourth frame 204 may be rectangular frames connected to each other. The mask frame 200 may be made of a material having a small deformation when the mask 130 is welded, for example, a metal having high rigidity.

The deposition mask 100 may be stretched in opposite directions at the outermost edge of the deposition mask 100 . In the deposition mask 100 , one end of the deposition mask 100 and the other end opposite to the one end may be pulled in opposite directions in the longitudinal direction of the deposition mask 100 . Accordingly, the tensile direction, the X-axis direction, and the longitudinal direction of the deposition mask 100 may all be in the same direction.

One end and the other end of the deposition mask 100 may face each other and be disposed in parallel. One end of the deposition mask 100 may be any one of the ends forming the four side surfaces disposed on the outermost side of the deposition mask 100 . For example, the deposition mask 100 may be stretched with a tensile force of about 0.1 kgf to about 2 kgf. In detail, the deposition mask may be tensioned with a tensile force of 0.4 kgf to about 1.5 kgf and fixed on the mask frame 200 . Accordingly, the stress of the deposition mask 100 may be reduced. However, the embodiment is not limited thereto, and may be tensioned with various tensile forces capable of reducing the stress of the deposition mask 100 and fixed on the mask frame 200 .

Subsequently, the deposition mask 100 may fix the deposition mask 100 to the mask frame 200 by welding an ineffective portion of the deposition mask 100 . Next, a portion of the deposition mask 100 disposed outside the mask frame 200 may be removed by cutting or the like.

The substrate 300 may be a substrate used for manufacturing a display device. For example, the substrate 300 may be a substrate 300 for depositing an organic material for an OLED pixel pattern. Organic patterns of red, green, and blue may be formed on the substrate 300 to form pixels having three primary colors of light. That is, an RGB pattern may be formed on the substrate 300 .

The organic material deposition vessel 400 may be a crucible. An organic material may be disposed inside the crucible. The organic material deposition vessel 400 may move in the vacuum chamber 500 . That is, the organic material deposition vessel 400 may move in the Y-axis direction in the vacuum chamber 500 . That is, the organic material deposition container 400 may move in the width direction of the deposition mask 100 in the vacuum chamber 500 . That is, the organic material deposition container 400 may move in a direction perpendicular to the tensile direction of the deposition mask 100 in the vacuum chamber 500 .

As a heat source and/or current are supplied to the crucible that is the organic material deposition vessel 400 in the vacuum chamber 500 , the organic material may be deposited on the substrate 100 .

Referring to FIG. 4 , the deposition mask 100 may include one surface 101 and the other surface 102 opposite to the one surface.

The one surface 101 of the deposition mask 100 may include a small face hole V1, and the other surface may include a large face hole V2. For example, each of the one surface 101 and the other surface 102 of the deposition mask 100 may include a plurality of small face holes V1 and a plurality of large face holes V2 .

Also, the deposition mask 100 may include a through hole TH. The through hole TH may communicate with each other by a communication part CA through which a boundary between the small face hole V1 and the large face hole V2 is connected.

In addition, the deposition mask 100 may include a first etching surface ES1 in the small surface hole V1 . The deposition mask 100 may include a second etching surface ES2 and a third etching surface ES3 in the facing hole V2 . In the through hole TH, the first etching surface ES1 in the small face hole V1 and the second etching surface ES2 and the third etching surface ES3 in the large face hole V2 communicate with each other to be formed. can For example, the first etching surface ES1 in one small face hole V1 communicates with the second etching surface ES2 and the third etching surface ES3 in one large face hole V2 to form one through hole. can form. Accordingly, the number of the through holes TH may correspond to the number of the small face holes V1 and the face holes V2.

Meanwhile, the second etching surface ES2 in the facing hole V2 may include a plurality of sub second etching surfaces ES2 . That is, the second etching surface ES2 in the facing hole V2 may include a pair of first sub-second etching surfaces and second sub-second etching surfaces facing each other in the longitudinal direction. Also, the third etching surface ES3 of the facing hole V2 may include a pair of first sub-third etching surfaces and second sub-third etching surfaces facing each other in the width direction.

A width of the face-to-face hole V2 may be greater than a width of the small-faced hole V1. At this time, the width of the small face hole V1 is measured on one surface 101 of the deposition mask 100 , and the width of the large face hole V2 is measured on the other surface 102 of the deposition mask 100 . can be

The small face hole V1 may be disposed toward the substrate 300 . The small face hole V1 may be disposed close to the substrate 300 . Accordingly, the small face hole V1 may have a shape corresponding to the deposition material, that is, the deposition pattern DP.

The facing hole V2 may be disposed toward the organic material deposition vessel 400 . Accordingly, the facing hole V2 can accommodate the organic material supplied from the organic material deposition container 400 in a wide width, and through the small face hole V1 having a smaller width than the facing hole V2, the A fine pattern can be quickly formed on the substrate 300 .

5 is a diagram illustrating a plan view of the deposition mask 100 according to the embodiment. With reference to FIG. 5 , the deposition mask 100 will be described in more detail.

Referring to FIG. 5 , the deposition mask 100 according to the embodiment may include a deposition area DA and a non-deposition area NDA.

The deposition area DA may be an area for forming a deposition pattern. The deposition area DA may include a pattern area and a non-pattern area. The pattern area may be a region including the small face hole V1, the face hole V2, the through hole TH, and the island part IS, and the non-pattern area includes the small face hole V1 and the face hole V2. ), the through hole TH, and the island portion IS may be a region not including.

Also, one deposition mask 100 may include a plurality of deposition areas DA. For example, the deposition area DA of the embodiment may include a plurality of effective portions AA1 , AA2 , and AA3 for forming a plurality of deposition patterns. The pattern area may include the plurality of effective portions AA1 , AA2 , and AA3 .

The plurality of effective parts AA1 , AA2 , and AA3 may include a first effective part AA1 , a second effective part AA2 , and a third effective part AA3 . Here, one deposition area DA may be any one of the first effective part AA1 , the second effective part AA2 , and the third effective part AA3 .

In the case of a small display device such as a smart phone, an effective portion of any one of the plurality of deposition regions included in the deposition mask 100 may be for forming one display device. Accordingly, one deposition mask 100 may include a plurality of effective portions, and thus a plurality of display devices may be formed at the same time. Accordingly, the deposition mask 100 according to the embodiment may improve process efficiency.

Alternatively, in the case of a large display device such as a television, a plurality of effective portions included in one deposition mask 100 may be a part for forming one display device. In this case, the plurality of effective parts may be for preventing deformation of the mask due to a load.

The deposition area DA may include a plurality of isolation areas IA1 and IA2 included in one deposition mask 100 . Separation areas IA1 and IA2 may be disposed between adjacent effective portions. The separation areas IA1 and IA2 may be spaced apart areas between a plurality of effective portions. For example, a first separation area IA1 may be disposed between the first effective part AA1 and the second effective part AA2 . In addition, a second separation area IA2 may be disposed between the second effective part AA2 and the third effective part AA3 . That is, adjacent effective regions may be distinguished from each other by the isolation regions IA1 and IA2 , and one deposition mask 100 may support a plurality of effective regions.

The deposition mask 100 may include non-deposition areas NDA on both sides of the deposition area DA in the longitudinal direction. The deposition mask 100 according to the embodiment may include the non-deposition area NDA on both sides of the deposition area DA in a horizontal direction.

The non-deposition region NDA of the deposition mask 100 may be a region not involved in deposition. The non-deposition area NDA may include frame fixing areas FA1 and FA2 for fixing the deposition mask 100 to the mask frame 200 . In addition, the non-deposition area NDA may include half-etched portions HF1 and HF2 and an open portion.

As described above, the deposition area DA may be an area for forming a deposition pattern, and the non-deposition area NDA may be an area not involved in deposition. In this case, a surface treatment layer different from that of the metal plate 10 may be formed in the deposition area DA of the deposition mask 100 , and the non-deposition area NDA surface treatment layer may not be formed. . Alternatively, a surface treatment layer different from that of the metal plate 10 may be formed on only one surface of the one surface 101 or the other surface 102 of the deposition mask 100 . Alternatively, a surface treatment layer different from the material of the metal plate 10 may be formed on only a portion of one surface 101 of the deposition mask 100 . For example, one surface 101 and/or the other surface 102 of the deposition mask 100 , and all and/or a part of the deposition mask 100 are a surface treatment layer having a slower etching rate than the material of the metal plate 10 . may be included to improve the etch factor. Accordingly, in the deposition mask 100 of the embodiment, it is possible to form a through hole having a fine size with high efficiency. For example, the deposition mask 100 of the embodiment may have a resolution of 400 PPI or higher. Specifically, the deposition mask 100 can form a deposition pattern having a high resolution of 500 PPI or more with high efficiency. Here, the surface treatment layer may include an element different from the material of the metal plate 10 or may include a metal material having a different composition of the same element. In this regard, it will be described in more detail in the manufacturing process of the deposition mask to be described later.

The non-deposition area NDA may include half-etched portions HF1 and HF2 . For example, the non-deposition area NDA of the deposition mask 100 may include a first half-etched portion HF1 on one side of the deposition area DA, and A second half-etched part HF2 may be included on the other side opposite to the one side. The first half-etched part HF1 and the second half-etched part HF2 may be regions in which grooves are formed in the depth direction of the deposition mask 100 . The first half-etched part HF1 and the second half-etched part HF2 may have a groove having a thickness of about 1/2 of that of the deposition mask, so that stress can be dispersed when the deposition mask 100 is stretched. have. In addition, the half-etched portions HF1 and HF2 are preferably formed to be symmetrical in the X-axis direction or symmetrical in the Y-axis direction with respect to the center of the deposition mask 100 . Through this, the tensile force in both directions can be uniformly adjusted.

The half-etched portions HF1 and HF2 may be formed in various shapes. The half-etched portions HF1 and HF2 may include semicircular grooves. The groove may be formed on at least one of one surface 101 of the deposition mask 100 and the other surface 102 opposite to the one surface 101 . Preferably, the half-etched portions HF1 and HF2 may be formed on a surface corresponding to the small face hole V1. Accordingly, since the half-etched portions HF1 and HF2 may be formed simultaneously with the small face hole V1, process efficiency may be improved. In addition, the half-etched portions HF1 and HF2 may disperse stress that may be generated due to a size difference between the facing holes V2 . However, the embodiment is not limited thereto, and the half-etched portions HF1 and HF2 may have a rectangular shape. For example, the first half-etched part HF1 and the second half-etched part HF2 may have a rectangular or square shape. Accordingly, the deposition mask 100 can effectively disperse stress.

In addition, the half-etched portions HF1 and HF2 may include a curved surface and a flat surface. A plane of the first half-etched part HF1 may be disposed adjacent to the first effective part AA1 , and the plane may be horizontally disposed with an end of the deposition mask 100 in a longitudinal direction. The curved surface of the first half-etched part HF1 may be convex toward one end of the deposition mask 100 in the longitudinal direction. For example, the curved surface of the first half-etched part HF1 may be formed such that a half of the vertical length of the deposition mask 100 corresponds to a radius of a semicircular shape.

In addition, a plane of the second half-etched part HF2 may be disposed adjacent to the third effective part AA3 , and the plane may be disposed horizontally with an end of the deposition mask 100 in the longitudinal direction. have. The curved surface of the second half-etched part HF2 may be convex toward the other end in the longitudinal direction of the deposition mask 100 . For example, the curved surface of the second half-etched part HF2 may be formed such that a half of the vertical length of the deposition mask 100 corresponds to a radius of a semicircular shape.

The half-etched portions HF1 and HF2 may be formed at the same time as the small-faced hole V1 or the large-faced hole V2 is formed. This can improve process efficiency. In addition, the grooves formed on the one surface 101 and the other surface 102 of the deposition mask 100 may be formed to be shifted from each other. Accordingly, the half-etched portions HF1 and HF2 may not penetrate.

In addition, the deposition mask 100 according to the embodiment may include four half-etched portions. For example, since the half-etching parts HF1 and HF2 may include an even number of half-etching parts HF1 and HF2, stress may be more efficiently distributed.

In addition, the half-etched portions HF1 and HF2 may be further formed in the non-effective portion UA of the deposition area DA. For example, a plurality of the half-etched portions HF1 and HF2 may be dispersed in all or a part of the ineffective portion UA to disperse stress during tension of the deposition mask 100 .

In addition, the half-etched portions HF1 and HF2 may be formed in the frame fixing areas FA1 and FA2 and/or in the peripheral area of the frame fixing areas FA1 and FA2. Accordingly, the deposition mask 100 generated when the deposition mask 100 is fixed to the mask frame 200 and/or when the organic material is deposited after the deposition mask 100 is fixed to the mask frame 200 . ) can be uniformly distributed. Accordingly, the deposition mask 100 can be maintained to have uniform through-holes.

That is, the deposition mask 100 according to the embodiment may include a plurality of half-etched portions. In detail, the deposition mask 100 according to the embodiment is illustrated as including the half-etched portions HF1 and HF2 only in the non-deposition area NDA, but is not limited thereto, and the deposition area DA and the non-deposition area ( NDA), at least one area may further include a plurality of half-etched parts. Accordingly, the stress of the deposition mask 100 may be uniformly distributed.

The non-deposition area NDA may include frame fixing areas FA1 and FA2 for fixing the deposition mask 100 to the mask frame 200 . For example, a first frame fixing area FA1 may be included on one side of the deposition area DA, and a second frame fixing area FA2 may be formed on the other side opposite to the one side of the deposition area DA. may include The first frame fixing area FA1 and the second frame fixing area FA2 may be areas fixed to the mask frame 200 by welding.

The frame fixing areas FA1 and FA2 are disposed between the half-etched portions HF1 and HF2 of the non-deposition area NDA and the effective portion of the deposition area DA adjacent to the half-etched portions HF1 and HF2. can be For example, the first frame fixed area FA1 may include a first half-etched portion HF1 of the non-deposition area NDA and a second portion of the deposition area DA adjacent to the first half-etched portion HF1 . It may be disposed between the first effective portions AA1. For example, the second frame fixed area FA2 may include a second half-etched portion HF2 of the non-deposition area NDA and a second half-etched portion HF2 of the deposition area DA adjacent to the second half-etched portion HF2 . It may be disposed between the three effective parts AA3. Accordingly, it is possible to simultaneously fix a plurality of deposition pattern portions.

In addition, the deposition mask 100 may include semicircular openings at both ends in the horizontal direction (X). For example, the non-deposition area NDA may include an open part. In detail, the non-deposition area NDA may include one semicircular opening at both ends in the horizontal direction. For example, the non-deposition area NDA of the deposition mask 100 may include an open portion having an open center in the vertical direction Y on one side of the horizontal direction. For example, the non-deposition area NDA of the deposition mask 100 may include an open part having an open center in the vertical direction on the other side opposite to the one side in the horizontal direction. That is, both ends of the deposition mask 100 may include an open portion at 1/2 the length in the vertical direction. For example, both ends of the deposition mask 100 may have a horseshoe-like shape.

In this case, the curved surface of the open part may face the half-etched parts HF1 and HF2. Accordingly, the open portions located at both ends of the deposition mask 100 are the first half-etched portions HF1 and HF2 or the second half-etched portions HF1 and HF2 and the vertical length of the deposition mask 100 . The separation distance may be the shortest at 1/2 of the point.

Also, the vertical length h2 of the open part may correspond to the vertical length h1 of the first half-etched part HF1 or the second half-etched part HF2 . Accordingly, when the deposition mask 100 is stretched, stress may be evenly distributed, thereby reducing wave deformation of the deposition mask. Accordingly, the deposition mask 100 according to the embodiment may have uniform through-holes, and thus the deposition efficiency of the pattern may be improved. Preferably, the vertical length h1 of the first half-etched part HF1 or the second half-etched part HF2 is about 80% to about 200% of the vertical length h2 of the open part. (h1:h2 = 0.8~2:1). The length h1 in the vertical direction of the first half-etched part HF1 or the second half-etched part HF2 may be about 90% to about 150% of the vertical length h2 of the open part ( h1:h2 = 0.9 to 1.5:1). The length h1 in the vertical direction of the first half-etched part HF1 or the second half-etched part HF2 may be about 95% to about 110% of the vertical length h2 of the open part ( h1:h2 = 0.95 to 1.1:1).

Also, although not shown in the drawings, the half-etched portion may be further formed in the ineffective portion UA of the deposition area DA. A plurality of the half-etched portions may be dispersed in all or a part of the ineffective portion UA in order to disperse stress during tension of the deposition mask 100 .

In addition, the half-etched portions HF1 and HF2 may be formed in the frame fixing regions FA1 and FA2 and/or in the peripheral regions of the frame fixing regions FA1 and FA2. Accordingly, the stress of the deposition mask 100 generated when the deposition mask 100 is fixed to the mask frame 200 and/or when the deposition material is deposited after the deposition mask 100 is fixed to the frame is reduced. It can be uniformly dispersed. Accordingly, the deposition mask 100 can be maintained to have uniform through-holes.

The deposition mask 100 may include a plurality of effective portions AA1 , AA2 , and AA3 spaced apart in the longitudinal direction and non-effective portions UA other than the effective portions. In detail, the deposition area DA may include a plurality of effective portions AA1 , AA2 , and AA3 and non-effective portions UA other than the effective portions AA.

The effective portions AA1 , AA2 , AA3 include a plurality of small face holes V1 formed on one surface of the deposition mask 100 , a plurality of large face holes V2 formed on the other surface opposite to the one surface, and the small surface It may include a through hole TH formed by the communication portion CA to which the boundary between the ball V1 and the facing hole V2 is connected.

Also, the effective parts AA1 , AA2 , and AA3 may include an island part IS supporting between the plurality of through-holes TH.

The island part IS may be positioned between adjacent through-holes TH among the plurality of through-holes TH. That is, in the effective portions AA1 , AA2 , and AA3 of the deposition mask 100 , a region other than the through hole TH may be the island portion IS.

The island portion IS may mean a portion that is not etched on the one surface 101 or the other surface 102 of the effective portion of the deposition mask. In detail, the island portion IS may be an unetched region between the through hole TH and the through hole TH on the other surface 102 on which the facing hole V2 of the effective portion of the deposition mask 100 is formed. have. Accordingly, the island portion IS may be disposed parallel to the one surface 101 of the deposition mask 100 . In detail, an upper surface of the island part IS may be disposed parallel to the one surface 101 .

The island part IS may be disposed on the same plane as the other surface 102 of the deposition mask 100 . Accordingly, the island portion IS may have the same thickness as at least a portion of the ineffective portion on the other surface 102 of the deposition mask 100 . In detail, the island portion IS may have the same thickness as an unetched portion of the ineffective portion on the other surface 102 of the deposition mask 100 . Accordingly, the deposition uniformity of the sub-pixels may be improved through the deposition mask 100 .

Alternatively, the island portion IS may be disposed on a plane parallel to the other surface 102 of the deposition mask 100 . Here, the parallel plane means the other surface of the deposition mask 100 on which the island part IS is disposed by the etching process around the island part IS and the non-etched deposition mask 100 among the ineffective parts. It may include that the height step difference of the other surface is ± 1 ㎛ or less.

The island portion IS may have a width W1 in a length direction and a width in a horizontal direction different from each other. That is, the island portion IS may have a width W1 in a longitudinal direction greater than a width W2 in a horizontal direction.

The deposition mask 100 may include an ineffective portion UA disposed outside the effective portions AA1 , AA2 , and AA3 . The effective portion AA may be an inner region when the outermost through-holes for depositing an organic material among the plurality of through-holes are connected. The ineffective portion UA may be an outer region when the outermost through-holes for depositing an organic material among the plurality of through-holes are connected.

The non-effective portion UA is an area excluding the effective portions AA1 , AA2 , and AA3 of the deposition area DA and the non-deposition area NDA. The ineffective portion UA may include outer areas OA1 , OA2 , and OA3 surrounding the effective portions AA1 , AA2 , and AA3 .

The number of the outer areas OA1 , OA2 , and OA3 may correspond to the number of the effective parts AA1 , AA2 , and AA3 . That is, one effective portion may include one outer region separated by a predetermined distance from the end of the effective portion in the horizontal and vertical directions, respectively.

The first effective portion AA1 may be included in the first outer area OA1 . The first effective portion AA1 may include a plurality of through holes TH for forming a deposition material. The first outer area OA1 surrounding the outer circumference of the first effective portion AA1 may include a plurality of through holes.

For example, the plurality of through-holes included in the first outer area OA1 is to reduce etching defects of the through-holes TH located at the outermost portion of the first effective portion AA1 . Accordingly, the deposition mask 100 according to the embodiment can improve the uniformity of the plurality of through-holes located in the effective portions AA1 , AA2 , and AA3 , thereby improving the quality of the deposition pattern manufactured. have.

In addition, the shape of the through hole TH of the first effective portion AA1 may correspond to the shape of the through hole TH of the first outer area OA1 . Accordingly, the uniformity of the through hole TH included in the first effective part AA1 may be improved. For example, the shape of the through hole TH of the first effective portion AA1 and the shape of the through hole of the first outer area OA1 may be circular. However, the embodiment is not limited thereto, and the through-hole TH may have various shapes, such as a diamond pattern or an oval pattern.

The second effective portion AA2 may be included in the second outer area OA2 . The second effective part AA2 may have a shape corresponding to that of the first effective part AA1 . The second outer area OA2 may have a shape corresponding to that of the first outer area OA1 .

The second outer area OA2 may further include two through holes, respectively, in a horizontal direction and a vertical direction from a through hole located at the outermost portion of the second effective portion AA2 . For example, in the second outer area OA2 , two through-holes may be arranged in a row in the horizontal direction at positions above and below the through-holes located at the outermost side of the second effective part AA2 , respectively. For example, in the second outer area OA2 , two through-holes may be arranged in a vertical line on the left and right sides of the through-holes located at the outermost side of the second effective part AA2 , respectively. The plurality of through-holes included in the second outer area OA2 is to reduce etching defects of the through-holes located at the outermost portion of the effective portion. Accordingly, the deposition mask according to the embodiment may improve the uniformity of the plurality of through-holes located in the effective portion, thereby improving the quality of the deposition pattern to be manufactured.

The third effective portion AA3 may be included in the third outer area OA3 . The third effective portion AA3 may include a plurality of through holes for forming a deposition material. The third outer area OA3 surrounding the outer portion of the third effective portion AA3 may include a plurality of through holes.

The third effective part AA3 may have a shape corresponding to that of the first effective part AA1 . The third outer area OA3 may have a shape corresponding to that of the first outer area OA1 .

Also, the through-holes TH included in the effective portions AA1 , AA2 and AA3 may have a shape partially corresponding to the through-holes included in the ineffective portion UA. For example, the through-holes included in the effective portions AA1 , AA2 , and AA3 may have different shapes from the through-holes located at the edge portion of the ineffective portion UA. Accordingly, the difference in stress according to the position of the deposition mask 100 may be adjusted.

6 is a plan view of an effective part of the deposition mask 100 according to the first embodiment, FIG. 7 is another plan view of the deposition mask according to the embodiment, and FIG. 8 is an embodiment It is a view showing another plan view of the deposition mask according to the present invention.

6 to 8 may be plan views of any one of the first effective part AA1, the second effective part AA2, and the third effective part AA3 of the deposition mask 100 according to the embodiment. . 6 to 8 are for explaining the shape of the through-hole TH and the arrangement between the through-holes TH. The deposition mask 100 according to the embodiment includes the through-hole TH shown in the drawing. is not limited to the number of

6 to 8 , the deposition mask 100 may include a plurality of through holes TH. In this case, the through-holes TH may be arranged in a line or alternately arranged depending on the direction. For example, the through-holes TH may be arranged in a line along the vertical axis and the horizontal axis, and may be arranged in a row along the vertical axis or the horizontal axis.

First, referring to FIG. 6 , the deposition mask 100 may include a plurality of through holes TH. In this case, the plurality of through holes TH may have a circular shape. In detail, the through hole TH may have a horizontal diameter Cx and a vertical diameter Cy, and a horizontal diameter Cx and a vertical diameter of the through hole TH (Cx) Cy) values may correspond to each other.

The through-holes TH may be arranged in a line along the direction. For example, the through-holes TH may be arranged in a row along a vertical axis and a horizontal axis.

In detail, the first through-hole TH1 and the second through-hole TH2 may be arranged in a line along the horizontal axis, and the third through-hole TH1 and the fourth through-hole TH4 may be arranged in a line along the vertical axis. have.

Also, the first through-hole TH1 and the third through-hole TH3 may be arranged in a line along the vertical axis, and the second through-hole TH2 and the fourth through-hole TH4 may be arranged in a horizontal axis. have.

That is, when the through-holes TH are arranged in a row on the vertical and horizontal axes, respectively, the island portion IS is positioned between two diagonally adjacent through-holes TH, which are directions intersecting both the vertical and horizontal axes. can do. That is, the island portion IS may be positioned between two adjacent through-holes TH positioned in a diagonal direction.

For example, the island portion IS may be disposed between the first through hole TH1 and the fourth through hole TH4. Also, an island portion IS may be disposed between the second through hole TH2 and the third through hole TH3. The island part IS may be respectively located in the inclination angle direction of about +45 degrees and the inclination angle direction of about -45 degrees with respect to the horizontal axis crossing the two adjacent through-holes, respectively. Here, the direction of the inclination angle of about ±45 may mean a diagonal direction between the horizontal axis and the vertical axis, and the inclination angle in the diagonal direction may be measured on the same plane of the horizontal axis and the vertical axis.

Also, referring to FIG. 7 , another deposition mask 100 according to the embodiment may include a plurality of through holes. In this case, the plurality of through-holes may have an elliptical shape. In detail, a diameter Cx in a horizontal direction and a diameter Cy in a vertical direction of the through hole TH may be different from each other. For example, the diameter Cx in the horizontal direction of the through hole may be greater than the diameter Cy in the vertical direction. However, the embodiment is not limited thereto, and the through hole may have a rectangular shape, an octagonal shape, or a rounded octagonal shape.

The through-holes TH may be arranged in a line on any one axis of the vertical axis or the horizontal axis, and may be alternately arranged on the other axis.

In detail, the first through-hole TH1 and the second through-hole TH2 may be arranged in a row along the horizontal axis, and the third through-hole TH1 and the fourth through-hole TH4 are the first through-hole TH1. and the second through-hole TH2 may be disposed to be staggered along the longitudinal axis, respectively.

When the through-holes TH are arranged in a line in any one direction of the vertical axis or the horizontal axis and are alternately arranged in the other direction, two adjacent through-holes TH1 in the other direction of the vertical axis or the horizontal axis The island part IS may be positioned between the TH2). Alternatively, the island portion IS may be positioned between the three through holes TH1 , TH2 , and TH3 positioned adjacent to each other. Of the three adjacent through holes TH1, TH2, and TH3, two through holes TH1 and TH2 are through holes arranged in a line, and the other through hole TH3 is adjacent in a direction corresponding to the line direction. In terms of location, it may mean a through hole that may be disposed in a region between the two through holes TH1 and TH2. An island portion IS may be disposed between the first through hole TH1 , the second through hole TH2 , and the third through hole TH3 . Alternatively, the island portion IS may be disposed between the second through hole TH2 , the third through hole TH3 , and the fourth through hole TH4 .

In addition, in the case of measuring the horizontal diameter (Cx) and the vertical diameter (Cy) of the reference hole, which is any one through hole, in the deposition mask 100 according to the embodiment, a through hole adjacent to the reference hole The deviation between the diameters Cx in the horizontal direction and the deviation between the diameters Cy in the vertical direction between the (TH) may be implemented as about 2% to about 10%. That is, when the size deviation between adjacent through-holes of one reference hole is about 2% to about 10%, uniformity of deposition can be secured. For example, a size deviation between the reference hole and the adjacent through-holes may be about 4% to about 9%. For example, a size deviation between the reference hole and the adjacent through-holes may be about 5% to about 7%. For example, a size deviation between the reference hole and the adjacent through-holes may be about 2% to about 5%. When the size deviation between the reference hole and the adjacent through-holes is less than about 2%, the moire generation rate in the OLED panel after deposition may be increased. When the size deviation between the reference hole and the adjacent through-holes exceeds about 10%, the occurrence rate of color unevenness in the OLED panel after deposition may increase. The average deviation of the diameter of the through hole may be ±5㎛. For example, the average deviation of the diameter of the through hole may be ±3㎛. For example, the average deviation of the diameter of the through hole may be ±1㎛. In the embodiment, the deposition efficiency can be improved by implementing a size deviation between the reference hole and the adjacent through-holes within ±3 μm.

Also, referring to FIG. 8 , the deposition mask 100 may include a plurality of through holes TH. In this case, the plurality of through holes TH may have a rectangular shape. For example, the through hole TH may have a rhombus shape. The through hole TH may have a horizontal length Cx and a vertical length Cy, and a horizontal length Cx and a vertical length Cy of the through hole TH. may correspond to each other.

The through-holes TH may be arranged in a line along the direction. For example, the through-holes TH may be arranged in a line on one of the vertical axis and the horizontal axis, and alternately arranged on the other axis.

In detail, the first through-hole TH1, the second through-hole TH2, and the third through-hole TH3 may be arranged in a row along the horizontal axis, and the fourth through-hole TH4 and the fifth through-hole TH5 may be arranged in a row along the horizontal axis, and the fourth through-hole TH4 and the fifth through-hole TH5 are formed with the first through-hole TH1, the second through-hole TH2, and the third through-hole TH3 and Each may be staggered along the longitudinal axis. For example, the fourth through-hole TH4 may be alternately disposed between the first through-hole TH1 and the second through-hole TH2 , and the fifth through-hole TH5 is the second through-hole TH2 . and the third through hole TH3 may be alternately disposed.

When the through-holes TH are arranged in a line in any one direction of the vertical axis or the horizontal axis and are alternately arranged in the other direction, the island part IS may be located at a point where the vertical axis and the horizontal axis intersect. . Alternatively, the island portion IS may be positioned between the four adjacent through holes TH1, TH2, TH4, and TH6.

Two through-holes TH1 and TH2 among the four adjacent through-holes TH1, TH2, TH4, and TH6 may refer to through-holes arranged in a row in any one direction of a vertical axis or a horizontal axis, and the remaining two The number of through-holes TH4 and TH6 may refer to through-holes arranged in a line in the other one of the vertical axis and the horizontal axis.

The island portion IS of FIGS. 6 to 8 may mean a non-etched surface between the through holes TH on the other surface of the deposition mask 100 on which the facing hole V2 of the effective portion AA is formed. can In detail, the island portion IS is the other surface of the deposition mask 100 that is not etched except for the second etching surface ES2 and the through hole TH located in the facing hole in the effective portion AA of the deposition mask. can The deposition mask 100 of the embodiment may be for deposition of high-resolution to ultra-high-resolution OLED pixels having a resolution of 400 PPI or more, specifically 400 PPI to 800 PPI or more.

For example, the deposition mask 100 of the embodiment may be for forming a deposition pattern having a high resolution of Full HD (High Definition) having a resolution of 400 PPI or more. For example, the deposition mask 100 of the embodiment may be for deposition of OLED pixels in which the number of pixels in the horizontal and vertical directions is 1920*1080 or more, and 400 PPI or more. That is, one effective part included in the deposition mask 100 of the embodiment may be for forming the number of pixels with a resolution of 1920*1080 or higher.

For example, the deposition mask 100 of the embodiment may be used to form a deposition pattern having a high resolution of quad high definition (QHD) having a resolution of 500 PPI or more. For example, the deposition mask 100 of the embodiment may be for OLED pixel deposition in which the number of pixels in the horizontal and vertical directions is 2560*1440 or more and 530 PPI or more. Through the deposition mask 100 of the embodiment, the number of pixels per inch may be 530 PPI or more based on a 5.5-inch OLED panel. That is, one effective part included in the deposition mask 100 of the embodiment may be for forming the number of pixels with a resolution of 2560*1440 or higher.

For example, the deposition mask 100 of the embodiment may be for forming a deposition pattern having an ultra high resolution of Ultra High Definition (UHD) having a resolution of 700 PPI or higher. For example, in the deposition mask 100 of the embodiment, the number of pixels in the horizontal and vertical directions is 3840 * 2160 or more, and a deposition pattern having Ultra High Definition (UHD) level resolution for OLED pixel deposition of 794 PPI or more is formed. it may be for

A diameter of the through hole TH may be a width between the communication portions CA. In detail, the diameter of the through hole TH may be measured at a point where the end of the etching surface in the small face hole V1 and the end of the etching surface in the large face hole V2 meet. The diameter of the through hole TH may be measured in any one of a horizontal direction, a vertical direction, and a diagonal direction. The diameter of the through hole TH measured in the horizontal direction may be 33 μm or less. Alternatively, the diameter of the through hole TH measured in the horizontal direction may be 33 μm or less. Alternatively, the diameter of the through hole TH may be an average value of values measured in a horizontal direction, a vertical direction, and a diagonal direction.

Accordingly, the deposition mask 100 according to the embodiment may implement QHD-level resolution. For example, the diameter of the through hole TH may be about 15 μm to about 33 μm. For example, the diameter of the through hole TH may be about 19 μm to about 33 μm. For example, the diameter of the through hole TH may be about 20 μm to about 27 μm. When the diameter of the through hole TH is greater than about 33 μm, it may be difficult to implement a resolution of 500 PPI or higher. On the other hand, when the diameter of the through hole TH is less than about 15 μm, a deposition defect may occur.

Referring to FIG. 6 , a pitch between two adjacent through-holes TH among a plurality of through-holes in the horizontal direction may be about 48 μm or less. For example, a pitch between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 20 μm to about 48 μm. For example, a pitch between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 30 μm to about 35 μm. Here, the distance may mean a distance P1 between the center of two adjacent first through-holes TH1 and the center of the second through-hole TH2 in the horizontal direction. Alternatively, the distance may mean a distance P2 between the center of two adjacent first island parts and the center of the second island part in the horizontal direction. Here, the center of the island part IS may be the center of the other non-etched surface between the four through-holes TH adjacent in the horizontal and vertical directions. For example, the center of the island portion IS is adjacent to the first through hole TH1 in the vertical direction with respect to the two first through holes TH1 and TH2 adjacent in the horizontal direction. The horizontal axis connecting the edges of the one island portion IS located in the region between the third through hole TH3 and the second through hole TH2 and the fourth through hole TH4 adjacent in the vertical direction and the vertical axis connecting the edges This may mean the point of intersection.

Also, referring to FIG. 7 , a pitch between two adjacent through-holes TH among a plurality of through-holes in the horizontal direction may be about 48 μm or less. For example, a pitch between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 20 μm to about 48 μm. For example, a pitch between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 30 μm to about 35 μm. Here, the distance may mean a distance P1 between the center of two adjacent first through-holes TH1 and the center of the second through-hole TH2 in the horizontal direction. In addition, the distance may mean a distance P2 between the center of two adjacent first island parts and the center of the second island part in the horizontal direction. Here, the center of the island portion IS may be a center on the other non-etched surface between one through-hole and two adjacent through-holes in the vertical direction. Alternatively, here, the center of the island portion IS may be the center of the other non-etched surface between the two through-holes and one adjacent through-hole in the vertical direction. That is, the center of the island portion IS is the center on the other non-etched surface between the three adjacent through-holes, and the three adjacent through-holes may mean that a triangular shape can be formed when the centers are connected.

The measurement direction of the diameter of the through hole TH and the measurement direction of the distance between the two adjacent through holes TH may be the same. The distance between the through-holes TH may be a measurement of a distance between two adjacent through-holes TH in a horizontal or vertical direction.

Also, referring to FIG. 8 , a pitch between two adjacent through-holes TH among a plurality of through-holes in the horizontal direction may be about 48 μm or less. For example, a pitch between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 20 μm to about 48 μm. For example, a pitch between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 30 μm to about 35 μm. Here, the distance may mean a distance P1 between the center of two adjacent first through-holes TH1 and the center of the second through-hole TH2 in the horizontal direction. Alternatively, the distance may mean a distance P2 between the center of two adjacent first island parts and the center of the second island part in the horizontal direction. Here, the center of the island part IS may be the center of the other non-etched surface between the four through-holes TH adjacent in the horizontal and vertical directions. For example, the center of the island portion IS is adjacent to the first through hole TH1 in the vertical direction with respect to the two first through holes TH1 and TH2 adjacent in the horizontal direction. The horizontal axis connecting the edges of the one island portion IS located in the region between the third through hole TH3 and the second through hole TH2 and the fourth through hole TH4 adjacent in the vertical direction and the vertical axis connecting the edges This may mean the point of intersection. For example, the center of the island portion IS is a first through-hole TH1 and a second through-hole TH2 which are two through-holes adjacent to each other in the horizontal direction, and the first through-hole TH1 and the second through-hole TH1 and the second It may be the center of the other non-etched surface located in the area between the fourth through hole TH4 and the sixth through hole TH4 that are two vertically adjacent through holes from the center of the area between the through holes TH2. That is, the center of the island portion IS may be the center of the non-etched surface located between the four through holes.

In addition, as shown in FIGS. 6 to 8 , the facing hole V2 may include a plurality of inner surfaces. In detail, the facing hole V2 may include a second inner surface ES2 and a third inner surface ES3. The facing hole is formed by connecting a plurality of second inner surfaces ES2 and a plurality of third inner surfaces ES3 to each other. Preferably, the plurality of second inner surfaces ES2 and the plurality of third inner surfaces ES3 form a facing hole of one through-hole.

The second inner surface ES2 of the facing hole is an inner surface located in a horizontal direction with respect to the center of the facing hole of the through hole. Preferably, the second inner surface ES2 is an inner surface located on both sides in the longitudinal direction with respect to the center of the facing hole. The second inner surface ES2 is an inner surface located on both sides in the tensile direction with respect to the center of the facing hole. The second inner surface ES2 is an inner surface located on both sides in the X-axis direction with respect to the center of the facing hole. Accordingly, the second inner surface ES2 includes the first sub-second inner surface ES2-1 positioned in the first longitudinal direction with respect to the center of the facing hole of the through hole, and the second inner surface ES2-1 opposite to the first longitudinal direction. and a second sub-second inner surface ES2 - 2 positioned in the longitudinal direction. Meanwhile, a cross-sectional inclination angle of the first sub-second inner surface ES2-1 may correspond to a cross-sectional inclination angle of the second sub-second inner surface ES2-2. That is, the cross-sectional inclination angle θ1 of the first sub-second inner surface ES2-1 and the second sub-second inner surface ES2-2 may be equal to each other.

The third inner surface ES3 of the facing hole is an inner surface positioned in a vertical direction with respect to the center of the facing hole of the through hole. Preferably, the third inner surface ES3 is an inner surface located on both sides in the width direction with respect to the center of the facing hole. The third inner surface ES3 is an inner surface located on both sides in a direction perpendicular to the tensile direction with respect to the center of the facing hole. The third inner surface ES3 is an inner surface located on both sides in the Y-axis direction with respect to the center of the facing hole. Accordingly, the third inner surface ES3 includes the first sub-third inner surface ES3-1 located in the first width direction with respect to the center of the facing hole of the through hole, and the second sub-third inner surface ES3-1 opposite to the first width direction. and a second sub-third inner surface ES3 - 2 positioned in the width direction. Meanwhile, a cross-sectional inclination angle of the first sub-third inner surface ES3 - 1 may correspond to a cross-sectional inclination angle of the second sub-third inner surface ES3 - 2 . That is, the cross-sectional inclination angle θ2 of the first sub-third inner surface ES3 - 1 and the second sub-third inner surface ES3 - 2 may be equal to each other.

Meanwhile, the cross-sectional inclination angle θ1 of the second inner surface ES2 may be different from the cross-sectional inclination angle θ2 of the third inner surface ES3. That is, the cross-sectional inclination angle θ1 of the second inner surface ES2 may be smaller than the cross-sectional inclination angle θ2 of the third inner surface ES3. That is, in the face-to-face hole of the through hole, a cross-sectional inclination angle θ2 of the inner surface in the width direction crossing the longitudinal direction may be greater than a cross-sectional inclination angle θ1 of the inner surface in the longitudinal direction.

The second inner surface ES2 and the third inner surface ES3 may be surfaces formed by an etch factor during an etching process. The second inner surface ES2 and the third inner surface ES3 may be inner surfaces extending from the through hole TH to the other surface 102 of the deposition mask 100 . For example, the second inner surface ES2 and the third inner surface ES3 may extend from the end of the through hole TH in the direction of the adjacent through hole TH, and the island portion IS direction can be extended. In addition, the second inner surface ES2 and the third inner surface ES3 may extend in the direction of the ineffective portion UA. That is, the second inner surface ES2 and the third inner surface ES3 may extend in a direction in which a non-etched surface is formed among the other surfaces 102 of the deposition mask 100 .

Ribs RB1 and RB may be positioned between the through holes TH. For example, referring to FIG. 6 , one second rib RB2 may be formed between the first through hole TH1 and the second through hole TH2 adjacent in the horizontal direction. In addition, another first rib RB1 may be formed between the first through hole TH1 and the third through hole TH3 adjacent in the vertical direction.

The first rib RB1 is disposed to extend in the longitudinal direction on the deposition mask 100 . The first rib RB1 is positioned in the longitudinal direction between the plurality of through holes arranged in the width direction on the deposition mask 100 . The first rib RB1 connects between the plurality of island portions IS arranged in the longitudinal direction on the deposition mask 100 .

The second rib RB2 is disposed to extend in the width direction on the deposition mask 100 . The second rib RB2 is formed in the width direction between the plurality of through holes arranged in the length direction on the deposition mask 100 . The second rib RB2 connects between the plurality of island portions IS arranged in the width direction on the deposition mask 100 .

Also, referring to FIG. 7 , one rib RB1 and RB2 may be formed between the first through hole TH1 and the second through hole TH2 adjacent in the horizontal direction, and the first through hole TH1 ) and the diagonally adjacent third through hole TH3, another rib RB1 and RB2 may be formed.

That is, the ribs RB1 and RB2 may be positioned between the through-holes TH adjacent to each other. In detail, ribs RB1 and RB2 may be positioned between adjacent facing holes V2. In more detail, the first rib RB1 may be positioned in a region where the adjacent second inner surfaces ES2 are connected to each other. In more detail, the second rib RB2 may be positioned in a region where the adjacent third inner surfaces ES3 are connected to each other. That is, the ribs RB1 and RB2 may be regions in which boundaries of adjacent facing holes V2 are connected.

The first rib RB1 may have a first thickness T1 . In addition, the second rib RB2 may have a second thickness T2 different from the first thickness T1 . A thickness of the first rib RB1 may be different from a thickness of the second rib RB2 . In detail, a thickness of the first rib RB1 may be greater than a thickness of the second rib RB2 . That is, the first rib RB1 is located in a region connecting the third inner surfaces ES3 of adjacent through holes, and the second rib RB2 is located in a region connecting the second inner surfaces ES2 of the adjacent through holes. is located in In this case, a cross-sectional inclination angle of the third inner surface ES3 is greater than a cross-sectional inclination angle of the second inner surface ES2. Accordingly, the thickness of the first rib RB1 located in the region connecting the second inner surface ES2 having the larger cross-sectional inclination angle is the second second located in the region connecting the third inner surface ES3 having the smaller cross-sectional inclination angle. It may be greater than the thickness of the rib RB2 .

That is, the deposition mask 100 according to the embodiment may deposit an OLED pixel having a resolution of 400 PPI or higher. In detail, in the deposition mask 100 according to the embodiment, the diameter of the through-holes TH is about 33 μm or less, and the pitch between the through-holes TH is about 48 μm or less, so that the deposition mask 100 has a resolution of 500 PPI or more. OLED pixels can be deposited. That is, it is possible to implement QHD-level resolution using the deposition mask 100 according to the embodiment.

A diameter of the through-hole TH and a distance between the through-holes TH may be sized to form a green sub-pixel. For example, the diameter of the through hole TH may be measured based on the green (G) pattern. The green (G) pattern has a low recognition rate through vision, so a larger number than the red (R) pattern and the blue (B) pattern is required, and the interval between the through holes (TH) is the red (R) pattern and the blue (B) pattern. B) It can be narrower than the pattern. The deposition mask 100 may be an OLED deposition mask for realizing QHD display pixels.

For example, the deposition mask 100 may be for depositing at least one sub-pixel among red (R), first green (G1), blue (B), and second green (G2) sub-pixels. In detail, the deposition mask 100 may be for depositing a red (R) sub-pixel. Alternatively, the deposition mask 100 may be for depositing a blue (B) sub-pixel. Alternatively, the deposition mask 100 may be used to simultaneously form a first green (G1) sub-pixel and a second green (G2) sub-pixel.

The pixel arrangement of the organic light emitting diode display may be arranged in the order of 'red (R) - first green (G1) - blue (B) - second green (G2)' (RGBG). In this case, red (R)-first green (G1) may form one pixel RG, and blue (B)-second green (G2) may form another pixel (BG). In the organic light emitting display device having such an arrangement, since the deposition interval of the green light emitting organic material is narrower than that of the red light emitting organic material and the blue light emitting organic material, a deposition mask 100 similar to that of the present invention may be required.

In addition, in the deposition mask 100 according to the embodiment, the diameter of the through hole TH may be about 20 μm or less in the horizontal direction. Accordingly, the deposition mask 100 according to the embodiment can implement UHD level resolution. For example, in the deposition mask 100 according to the embodiment, the diameter of the through hole TH is about 20 μm or less and the distance between the through holes is about 32 μm or less, so that the resolution of 800 PPI is OLED pixels can be deposited. That is, UHD level resolution can be realized by using the deposition mask according to the embodiment.

A diameter of the through-hole and an interval between the through-holes may be sized to form a green sub-pixel. The deposition mask may be an OLED deposition mask for realizing UHD display pixels.

FIG. 9 is a diagram illustrating each of the cross-sections overlaid to explain the height difference and size between the cross-section in the A-A' direction and the cross-section in the B-B' direction of FIG. 6 .

First, a cross section in the A-A' direction will be described. The A-A' direction is a cross-section crossing a central area between two adjacent first through-holes TH1 and TH3 in a vertical direction. That is, the cross section in the A-A' direction may not include the through hole TH.

The cross section in the A-A' direction is the island portion IS, which is the other surface of the deposition mask that is not etched between the third inner surface ES3 in the facing hole and the third inner surface ES3 in the facing hole. can be located Accordingly, the island portion IS may include a surface parallel to the unetched surface of the deposition mask. Alternatively, the island portion IS may include a surface that is the same as or parallel to the other non-etched surface of the deposition mask 100 .

Next, the cross section in the B-B direction will be described. The direction B-B' is a cross-section crossing the center of each of the two adjacent first through-holes TH1 and TH2 in the horizontal direction. That is, the cross section in the direction B-B' may include a plurality of through holes TH.

One second rib RB2 may be positioned between the adjacent third and fourth through-holes TH3 and TH4 in the B-B' direction. Another second rib RB2 may be positioned between the fourth through hole TH4 and the fourth through hole in the horizontal direction, but between the third through hole TH3 and the fifth through hole located in the opposite direction. have. One through hole TH may be positioned between the one second rib and the other second rib. That is, one through hole TH may be positioned between two adjacent second ribs RB1 in the horizontal direction.

In addition, the cross section in the A-A' direction is a region where the second inner surface ES2 in the facing hole and the second inner surface ES2 in the adjacent facing hole are connected to each other, the first rib RB1 is located. can Here, the first rib RB1 may be a region in which a boundary between two vertically adjacent facing holes is connected.

Since the first and second ribs RB1 and RB2 are etched surfaces, the thickness of the first and second ribs RB1 and RB2 may be smaller than that of the island portion IS. For example, the island portion IS may have a width of about 2 μm or more. That is, a width of a portion remaining unetched on the other surface in a direction parallel to the other surface may be about 2 μm or more. When the width of one end and the other end of one island portion IS is about 2 μm or more, the total volume of the deposition mask 100 may be increased. The deposition mask 100 having such a structure ensures sufficient rigidity with respect to the tensile force applied in the organic material deposition process, etc., and may be advantageous in maintaining the uniformity of the through-holes.

10 is a view showing a cross-sectional view in the BB' direction of FIG. 6, FIG. 11 is a view showing a cross-sectional view in the CC' direction of FIG. 6, FIG. 12 is a cross-sectional view in the DD' direction of FIG. It is a drawing.

10 to 12 show a difference between a cross-sectional inclination angle of the second inner surface ES2 and a cross-sectional inclination angle of the third inner surface ES3 in the through hole. 10 to 12 show the thickness of the second rib RB2 positioned in the region where the second inner surfaces ES2 are connected and the thickness of the first rib RB1 positioned in the region where the third inner surfaces ES3 are connected. show the difference between 10 to 12 show the height between the communication part and one surface of the deposition mask 100 in which the small face hole V1 is formed on the first rib RB1, and the small face hole V1 on the second rib RB2. V1) shows the difference in height between the one surface of the deposition mask and the communicating portion.

A cross-section in the B-B' direction, a cross-section in the C-C' direction, and a longitudinal cross-section in the D-D' direction will be described with reference to FIGS. 10 to 12 . Also, the ribs RB1 and RB2 of the effective area according to FIGS. 10 to 12 and the through hole TH between the ribs RB1 and RB2 will be described.

10 to 12 , in the deposition mask 100 according to the embodiment, the thickness in the effective portion AA where the through-hole is formed by etching and the thickness in the non-etched portion UA are mutually different from each other. can be different. In detail, the thickness of the first rib RB1 and the second rib RB2 may be smaller than the thickness of the non-etched portion UA.

In the deposition mask 100 according to the embodiment, the thickness of the ineffective portion UA may be greater than the thickness of the effective portion AA1 , AA2 , and AA3 . For example, in the deposition mask 100 , the maximum thickness of the non-effective portion UA to the non-deposition area NDA may be about 30 μm or less. For example, in the deposition mask 100 , the maximum thickness of the non-effective portion UA to the non-deposition area NDA may be about 25 μm or less. For example, in the deposition mask of the embodiment, the maximum thickness of the non-effective portion to the non-deposition region may be about 15 μm to about 25 μm. When the maximum thickness of the non-effective portion or the non-deposition region of the deposition mask according to the embodiment exceeds about 30 μm, the thickness of the metal plate 10, which is the raw material of the deposition mask 100, becomes thick, so that a fine penetration It may be difficult to form the hole TH. In addition, when the maximum thickness of the non-effective portion UA to the non-deposition region NDA of the deposition mask 100 is less than about 15 μm, it may be difficult to form a through hole of a uniform size because the thickness of the metal plate is thin. .

The maximum thicknesses T1 and T2 measured at the respective centers of the first and second ribs RB1 and RB2 may be about 15 μm or less. For example, the maximum thicknesses T1 and T2 measured at the respective centers of the first and second ribs RB1 and RB2 may be about 7 μm to about 10 μm. For example, the maximum thicknesses T1 and T2 measured at the respective centers of the first and second ribs RB1 and RB2 may be about 6 μm to about 9 μm. When the maximum thicknesses T1 and T2 measured at the respective centers of the first and second ribs RB1 and RB2 exceed about 15 μm, it may be difficult to form an OLED deposition pattern having a high resolution of 500 PPI or higher. Also, when the maximum thicknesses T1 and T2 measured at the centers of the first and second ribs RB1 and RB2 are less than about 6 μm, it may be difficult to uniformly form a deposition pattern.

Meanwhile, the maximum thicknesses T1 and T2 measured at the respective centers of the first and second ribs RB1 and RB2 may be different from each other. In detail, the maximum thicknesses T1 and T2 measured at the respective centers of the first and second ribs RB1 and RB2 may have different values while satisfying the above ranges. In more detail, the maximum thickness T1 measured at the center of the first rib RB1 may be greater than the maximum thickness T2 measured at the center of the second rib RB2 . The maximum thickness T1 measured at the center of the first rib RB1 may be greater than the maximum thickness T2 measured at the center of the second rib RB2 within the above-described range. In other words, the maximum thickness T1 measured at the center of the first rib RB1 may have a predetermined difference value ΔT from the maximum thickness T2 measured at the center of the second rib RB2 . .

The height of the face hole of the deposition mask 100 may be about 0.2 to about 0.4 times the maximum thickness T1 and T2 of the two ribs RB1 and RB2. Accordingly, the height of the carded hole formed on the first rib RB1 may be different from the height of the carded hole formed on the second rib RB2 . In other words, in the carding hole of the through hole, the height of the carding hole in the first direction (specifically, the longitudinal direction) may be different from the height of the carding hole in the second direction (specifically, the width direction). In detail, the height H2 of the small face hole formed on the first rib RB1 may be greater than the height H1 of the small face hole formed on the second rib RB2 .

For example, the maximum thickness measured from the center of the first rib RB1 or the second rib RB2 is about 7 μm to about 9 μm, and a surface between one surface of the deposition mask 100 and the communication part. The ball height may be from about 1.4 μm to about 3.5 μm.

The height H2 of the small face hole in the first rib RB1 of the deposition mask 100 may be about 4.0 μm or less. The height H1 of the small face hole in the second rib RB2 of the deposition mask 100 may be about 3.5 μm or less.

Preferably, the height H2 of the small face hole in the first rib RB1 of the deposition mask 100 may be about 3.5 μm or less. The height H1 of the small face hole in the second rib RB2 of the deposition mask 100 may be about 2.5 μm or less.

Preferably, the height H2 of the face hole in the first rib RB1 may be about 0.1 μm to about 3.4 μm. In addition, the height H1 of the small face hole in the second rib RB2 may be 0.1 μm to about 2.4 μm. For example, the height of the small face hole V1 in the first rib RB1 of the deposition mask 100 may be about 0.5 μm to about 3.2 μm. For example, the height of the small face hole V1 in the second rib RB1 of the deposition mask 100 may be about 0.5 μm to about 2.2 μm. For example, the height of the small face hole in the first rib RB1 of the deposition mask 100 may be about 1 μm to about 3 μm. For example, the height of the small face hole in the second rib RB2 of the deposition mask 100 may be about 1 μm to about 2 μm. Here, the height may be measured in the thickness measurement direction of the deposition mask 100 , that is, the depth direction, and may be a measurement of the height from one surface of the deposition mask 100 to the communication portion. In detail, it may be measured in the z-axis direction forming 90 degrees in the horizontal direction (x-direction, longitudinal direction, tensile direction) and vertical direction (y-direction, width direction, tensile vertical direction) described above in the plan view of FIG. 5 , respectively. .

When the height between the one surface of the deposition mask 100 and the communication part is greater than about 3.5 μm, deposition defects may occur due to a shadow effect in which the deposition material spreads to an area larger than the area of the through hole during OLED deposition. can Accordingly, the height of the carded hole in the first rib RB1 is set to be 3.5 µm or less, and the height of the carded hole in the second rib RB2 is set to be 3.0 µm or less. Meanwhile, the height of the carded hole in the first rib RB1 may have a predetermined difference value ΔH from the height of the carded hole in the second rib RB2 .

In addition, the pore diameter W3 at one surface where the small face hole V1 of the deposition mask 100 is formed and the pore diameter W4 at the communication portion that is the boundary between the small face hole V1 and the face face hole V2 are mutually may be similar or different. A hole diameter W3 on one surface of the deposition mask 100 on which the small surface hole V1 is formed may be larger than a hole diameter W4 on the communication part. For example, the difference between the hole diameter W3 on one surface of the deposition mask 100 and the hole diameter W4 on the communication part may be about 0.01 μm to about 1.1 μm. For example, a difference between the pore diameter W3 on one surface of the deposition mask and the pore diameter W4 on the communication portion may be about 0.03 μm to about 1.1 μm. For example, a difference between the pore diameter W3 on one surface of the deposition mask and the pore diameter W4 on the communication portion may be about 0.05 μm to about 1.1 μm.

When the difference between the pore diameter W1 on one surface of the deposition mask 100 and the pore diameter W2 on the communication portion is greater than about 1.1 μm, deposition failure may occur due to a shadow effect.

In addition, on the second rib RB2 , one end E1 of the second inner surface ES2 of the facing hole V2 and the small face hole ( A cross-sectional inclination angle θ1 connecting one end E2 of the communication portion between V1) and the facing hole V2 may be 35 degrees to 45 degrees. On the first rib RB1 , one end E3 and the small face hole V1 of the third inner surface ES3 of the face hole V2 are located on the other surface opposite to the one surface of the deposition mask 100 . A cross-sectional inclination angle θ2 connecting one end E4 of the communication part between the face hole V2 and the face hole V2 may be 45 degrees to 55 degrees.

Accordingly, a high-resolution deposition pattern of 400 PPI or higher, specifically 500 PPI or higher, may be formed, and the island portion IS may be present on the other surface of the deposition mask 100 .

According to an embodiment, the facing hole of the through hole has a first cross-sectional inclination angle in the longitudinal direction, and has a second cross-sectional inclination angle greater than the first cross-sectional inclination angle in the width direction, and the first cross-sectional inclination angle and the second inclination angle are The thickness of the ribs disposed in the longitudinal direction may be increased by the difference between the two cross-sectional inclination angles, and accordingly, the rigidity of the deposition mask may be secured. In addition, as the rigidity of the deposition mask is secured, length deformation can be minimized, and thus the pattern deposition efficiency can be improved by increasing the uniformity of the shape of the mask pattern and the position of the through hole.

Further, according to the embodiment, the inclination angle of the facing hole of the through hole in the direction perpendicular to the movement direction of the organic material deposition container is reduced, so that the OLED pixel pattern can be uniformly deposited in all areas regardless of the position of the through hole.

13 is a plan view of an effective part of the deposition mask 100 according to the second embodiment, FIG. 14 is a cross-sectional view illustrating the second through hole in FIG. 13, and FIG. 15 is a third through hole in FIG. It is a cross-sectional view showing a through hole.

The deposition mask in FIG. 13 is different from the deposition mask in FIG. 6 in the through hole disposed at the outermost portion of the effective portion. Therefore, hereinafter, only the through-hole disposed at the outermost portion of the effective portion in FIG. 13 in contrast to FIG. 6 will be described.

Referring to FIG. 13 , the effective portion of the deposition mask may include a plurality of through holes. The plurality of through holes may include a first through hole VH1 disposed in the inner region of the effective portion, a second through hole VH2 disposed in the first outermost portion of the effective portion, and a second outermost portion of the effective portion. A third through hole VH3 disposed in the portion may be included.

The first through hole VH1 is the same as the through hole described with reference to FIGS. 9 to 12 . That is, the first through hole VH1 includes a second inner surface ES2 and a third inner surface ES3 . In addition, the second inner surface ES2 has the same first cross-sectional inclination angle and faces the first sub-second inner surface ES2-1 and the second sub-second inner surface ES2-2 in the longitudinal direction. ) is included.

In addition, the third inner surface ES3 has the same second cross-sectional inclination angle and faces the first sub-third inner surface ES3-1 and the second sub-third inner surface ES3-2 in the width direction. ) is included. In addition, the inclination angle of the first cross-section of the first through hole VH1 is smaller than the inclination angle of the second cross-section.

Meanwhile, the second through hole VH2 may be disposed on the first outermost portion of the effective portion, and the third through hole VH3 may be disposed on the second outermost portion opposite to the first outermost portion. In detail, the first outermost portion may be an outermost region in the first longitudinal direction within the effective portion. In this case, the first longitudinal direction may be a left direction. Accordingly, the first outermost portion may be a region located at the leftmost side within the effective portion. The second outermost portion may be an outermost region in the second longitudinal direction within the effective portion. In this case, the second longitudinal direction may be a right direction. Accordingly, the second outermost portion may be a region located on the rightmost side within the effective portion.

A second through hole VH2 is disposed in the first outermost portion, and a third through hole VH3 is disposed in the second outermost portion.

The facing hole of the second through hole VH2 includes the second inner surface ES2 and the third inner surface ES3 like the first through hole VH1 . In this case, the third inner surface ES3 of the facing hole of the second through hole VH2 may have the same cross-sectional inclination angle as the third inner surface ES3 of the facing hole of the first through hole VH1. . However, the inclination angle of the cross-section of the second inner surface ES2 of the facing hole of the second through hole VH2 may be different from the inclination angle of the cross-section of the second inner surface ES2 of the facing hole of the first through hole VH1. have.

The second inner surface ES2 of the facing hole of the second through hole VH2 has a third sub-second inner surface ES2-3 and a fourth sub-second inner surface ES2 facing each other in the longitudinal direction. -4) is included.

In this case, the third sub-second inner surface ES2-3 is located in an area adjacent to the ineffective portion UA, and the fourth sub-second inner surface ES2-4 is an inner area (central area) of the effective portion. can be done) and is located in the adjacent area.

The third sub-second inner surface ES2-3 has a third cross-sectional inclination angle, and the fourth sub-second inner surface ES2-4 has a fourth cross-sectional inclination angle. In this case, the third inclination angle of the cross-section and the fourth inclination angle of the cross-section may be different from each other. That is, the third sub-second inner surface ES2-3 may have a cross-sectional inclination angle different from that of the fourth sub-second inner surface ES2-4. Preferably, a cross-sectional inclination angle of the third sub-second inner surface ES2-3 may be greater than a cross-sectional inclination angle of the fourth sub-second inner surface ES2-4.

Also, thicknesses of the third rib connected to the third sub-second inner surface ES2 - 3 and the fourth rib connected to the fourth sub-second inner surface ES2 - 4 may be different. That is, a thickness of the third rib connected to the third sub-second inner surface ES2 - 3 may be greater than a thickness of the fourth rib connected to the fourth sub-second inner surface ES2 - 4 .

The maximum thicknesses T3 and T4 measured at the respective centers of the third and fourth ribs may be about 15 μm or less. For example, the maximum thicknesses T3 and T4 measured at the respective centers of the third and fourth ribs may be about 7 μm to about 10 μm. For example, the maximum thicknesses T3 and T4 measured at the respective centers of the third and fourth ribs may be about 6 μm to about 9 μm. When the maximum thickness (T3, T4) measured at the center of each of the third and fourth ribs exceeds about 15 μm, it may be difficult to form an OLED deposition pattern having a high resolution of 500 PPI or higher. In addition, when the maximum thicknesses T3 and T4 measured at the center of the third and fourth ribs are less than about 6 μm, it may be difficult to form a uniform deposition pattern.

Meanwhile, the maximum thicknesses T3 and T4 measured at the respective centers of the third and fourth ribs may be different from each other. In detail, the maximum thicknesses T3 and T4 measured at the respective centers of the third and fourth ribs may have different values while satisfying the above ranges. In more detail, the maximum thickness T4 measured at the center of the fourth rib may be smaller than the maximum thickness T3 measured at the center of the third rib. The maximum thickness T4 measured at the center of the fourth rib may have a smaller value than the maximum thickness T3 measured at the center of the third rib within the above-described range.

The height of the small face hole of the second through hole VH2 of the deposition mask 100 may be about 0.2 to about 0.4 times the maximum thickness T3 and T4 measured at the center of the third and fourth ribs. Accordingly, the height of the small face hole formed on the fourth rib may be different from the height of the small face hole formed on the third rib. In detail, the height H4 of the small face holes formed on the fourth rib may be smaller than the height H3 of the face holes formed on the third rib.

For example, the maximum thickness measured at the center of the third or fourth rib is about 7 μm to about 9 μm, and the height of the small face hole between one surface of the second through hole of the deposition mask 100 and the communication part is It may be about 1.4 μm to about 3.5 μm.

The height H4 of the small face hole in the third rib of the deposition mask 100 may be about 4.0 μm or less. The height H1 of the small face hole in the fourth rib of the deposition mask 100 may be about 3.5 μm or less.

Preferably, the height H3 of the small face hole in the third rib of the second through hole of the deposition mask 100 may be about 3.5 μm or less. A height H4 of the small face hole in the fourth rib of the second through hole of the deposition mask 100 may be about 2.5 μm or less.

Preferably, the height (H3) of the face hole in the third rib may be about 0.1 μm to about 3.4 μm. In addition, the height H4 of the facet holes in the fourth rib may be 0.1 μm to about 2.4 μm. For example, the height of the small face hole V1 in the third rib of the deposition mask 100 may be about 0.5 μm to about 3.2 μm. For example, the height of the small face hole V1 in the fourth rib of the deposition mask 100 may be about 0.5 μm to about 2.2 μm. For example, the height of the small face hole in the third rib of the deposition mask 100 may be about 1 μm to about 3 μm. For example, the height of the small face hole in the fourth rib of the deposition mask 100 may be about 1 μm to about 2 μm. Here, the height may be measured in the thickness measurement direction of the deposition mask 100 , that is, the depth direction, and may be a measurement of the height from one surface of the deposition mask 100 to the communication portion. In detail, it may be measured in the z-axis direction forming 90 degrees in the horizontal direction (x-direction, longitudinal direction, tensile direction) and vertical direction (y-direction, width direction, tensile vertical direction) described above in the plan view of FIG. 5 , respectively. .

When the height between the one surface of the deposition mask 100 and the communication part is greater than about 3.5 μm, deposition defects may occur due to a shadow effect in which the deposition material spreads to an area larger than the area of the through hole during OLED deposition. can Accordingly, the height of the faceted holes in the third rib is set to be 3.5 μm or less, and the height of the carded holes in the fourth rib is set to be 3.0 μm or less.

In addition, on the third rib, one end E5 and the small surface of the third sub-second inner surface ES2-3 of the facing hole V2 located on the other surface opposite to the one surface of the deposition mask 100 . A cross-sectional inclination angle θ3 connecting one end E6 of the communication part between the ball V1 and the facing hole V2 may be 45 degrees to 55 degrees. On the fourth rib, one end E7 of the fourth sub-second inner surface ES2-4 of the facing hole V2 and the small face hole ( A cross-section inclination angle θ4 connecting one end E8 of the communication part between V1 and the facing hole V2 may be 35 degrees to 45 degrees.

Meanwhile, the facing hole of the third through hole VH3 includes a second inner surface ES2 and a third inner surface ES3 like the first through hole VH1 . In this case, the third inner surface ES3 of the facing hole of the third through hole VH3 may have the same cross-sectional inclination angle as the third inner surface ES3 of the facing hole of the first through hole VH1. . However, the inclination angle of the cross-section of the second inner surface ES2 of the facing hole of the third through hole VH3 may be different from the inclination angle of the cross-section of the second inner surface ES2 of the facing hole of the first through hole VH1. have.

The second inner surface ES2 of the facing hole of the third through hole VH3 has a fifth sub-second inner surface ES2-5 and a sixth sub-second inner surface ES2 facing each other in the longitudinal direction. -6) is included.

In this case, the fifth sub-second inner surface ES2-5 is located in an area adjacent to the ineffective portion UA, and the sixth sub-second inner surface ES2-5 is an inner area (central area) of the effective portion. can be done) and is located in the adjacent area.

The fifth sub-second inner surface ES2-5 has a fifth cross-sectional inclination angle, and the sixth sub-second inner surface ES2-6 has a sixth cross-sectional inclination angle. In this case, the fifth inclination angle of the cross-section and the sixth inclination angle of the cross-section may be different from each other. That is, the fifth sub-second inner surface ES2-5 may have a cross-sectional inclination angle different from that of the sixth sub-second inner surface ES2-6. Preferably, a cross-sectional inclination angle of the fifth sub-second inner surface ES2-5 may be greater than a cross-sectional inclination angle of the sixth sub-second inner surface ES2-6.

Also, thicknesses of the fifth rib connected to the fifth sub-second inner surface ES2-5 and the sixth rib connected to the sixth sub-second inner surface ES2-6 may be different. That is, the thickness of the fifth rib connected to the fifth sub-second inner surface ES2-5 may be greater than the thickness of the sixth rib connected to the sixth sub-second inner surface ES2-6.

The maximum thicknesses T5 and T6 measured at the respective centers of the fifth and sixth ribs may be about 15 μm or less. For example, the maximum thicknesses T5 and T6 measured at the respective centers of the fifth and sixth ribs may be about 7 μm to about 10 μm. For example, the maximum thicknesses T5 and T6 measured at the respective centers of the fifth and sixth ribs may be about 6 μm to about 9 μm. When the maximum thickness (T5, T6) measured at the center of each of the fifth and sixth ribs exceeds about 15 μm, it may be difficult to form an OLED deposition pattern having a high resolution of 500 PPI or higher. In addition, when the maximum thicknesses T5 and T6 measured at the center of the fifth and sixth ribs are less than about 6 μm, it may be difficult to form a uniform deposition pattern.

Meanwhile, the maximum thicknesses T5 and T6 measured at the respective centers of the fifth and sixth ribs may be different from each other. In detail, the maximum thicknesses T5 and T6 measured at the respective centers of the fifth and sixth ribs may have different values while satisfying the above ranges. In more detail, the maximum thickness T6 measured at the center of the sixth rib may be smaller than the maximum thickness T5 measured at the center of the fifth rib. The maximum thickness T6 measured at the center of the sixth rib may have a smaller value than the maximum thickness T5 measured at the center of the fifth rib within the above-described range.

The height of the small face hole of the third through hole VH3 of the deposition mask 100 may be about 0.2 to about 0.4 times the maximum thickness T5 and T6 measured at the center of the fifth and sixth ribs. Accordingly, the height of the small face hole formed on the sixth rib may be different from the height of the small face hole formed on the fifth rib. In detail, the height H6 of the small face holes formed on the sixth rib may be smaller than the height H5 of the small face holes formed on the fifth rib.

For example, the maximum thickness measured at the center of the fifth rib or the sixth rib is about 7 μm to about 9 μm, and the height of the small face hole between one surface of the third through hole of the deposition mask 100 and the communication part is It may be about 1.4 μm to about 3.5 μm.

The height H5 of the face-down hole in the fifth rib of the deposition mask 100 may be about 4.0 μm or less. A height H6 of the face-down hole in the sixth rib of the deposition mask 100 may be about 3.5 μm or less. Preferably, the height H5 of the small face hole in the fifth rib of the third through hole of the deposition mask 100 may be about 3.5 μm or less. A height H6 of the small face hole in the sixth rib of the third through hole of the deposition mask 100 may be about 2.5 μm or less.

Preferably, the height (H5) of the face hole in the fifth rib may be about 0.1 μm to about 3.4 μm. In addition, the height H6 of the small face hole in the sixth rib may be 0.1 μm to about 2.4 μm. For example, the height of the small face hole V1 in the fifth rib of the deposition mask 100 may be about 0.5 μm to about 3.2 μm. For example, the height of the small face hole V1 in the sixth rib of the deposition mask 100 may be about 0.5 μm to about 2.2 μm. For example, the height of the small face hole in the fifth rib of the deposition mask 100 may be about 1 μm to about 3 μm. For example, the height of the small face hole in the sixth rib of the deposition mask 100 may be about 1 μm to about 2 μm. Here, the height may be measured in the thickness measurement direction of the deposition mask 100 , that is, the depth direction, and may be a measurement of the height from one surface of the deposition mask 100 to the communication portion. In detail, it may be measured in the z-axis direction forming 90 degrees in the horizontal direction (x-direction, longitudinal direction, tensile direction) and vertical direction (y-direction, width direction, tensile vertical direction) described above in the plan view of FIG. 5 , respectively. .

When the height between the one surface of the deposition mask 100 and the communication part is greater than about 3.5 μm, deposition defects may occur due to a shadow effect in which the deposition material spreads to an area larger than the area of the through hole during OLED deposition. can Accordingly, the height of the carded hole in the fifth rib is set to be 3.5 µm or less, and the height of the carded hole in the sixth rib is set to be 3.0 µm or less.

In addition, on the fifth rib, one end E9 and the small surface of the fifth sub-second inner surface ES2-5 of the facing hole V2 located on the other surface opposite to one surface of the deposition mask 100 . A cross-sectional inclination angle θ5 connecting one end E10 of the communication part between the ball V1 and the facing hole V2 may be 45 degrees to 55 degrees. On the sixth rib, one end E11 of the sixth sub-second inner surface ES2-6 of the face-to-face hole V2 and the small face hole ( A cross-section inclination angle θ6 connecting one end E12 of the communication part between V1 and the facing hole V2 may be 35 degrees to 45 degrees.

16 is a diagram illustrating a method of manufacturing a deposition mask 100 according to an embodiment.

Referring to FIG. 16 , the method of manufacturing the deposition mask 100 according to the embodiment includes preparing a metal plate 10 , disposing a photoresist layer on the metal plate 10 to form a through hole, and It may include removing the photoresist layer to form the deposition mask 100 including the through hole.

First, the metal plate 10, which is a basic material for manufacturing the deposition mask 100, is prepared (S410).

The metal plate 10 may include a metal material. For example, the metal plate 10 may include nickel (Ni). In detail, the metal plate 10 may include iron (Fe) and nickel (Ni). In more detail, the metal plate 10 may include iron (Fe), nickel (Ni), oxygen (O), and chromium (Cr). In addition, the metal plate 10 is a small amount of carbon (C), silicon (Si), sulfur (S), phosphorus (P), manganese (Mn), titanium (Ti), cobalt (Co), copper (Cu), At least one element selected from among silver (Ag), vanadium (V), niobium (Nb), indium (In), and antimony (Sb) may be further included. The Invar is an alloy containing iron and nickel, and is a low thermal expansion alloy having a thermal expansion coefficient close to zero. That is, since the invar has a very small coefficient of thermal expansion, it is used in precision parts such as masks and precision instruments. Accordingly, the deposition mask manufactured using the metal plate 10 may have improved reliability, thereby preventing deformation and increasing lifespan.

The metal plate 10 may contain about 60 wt% to about 65 wt% of the iron, and about 35 wt% to about 40 wt% of the nickel. In detail, the metal plate 10 may contain about 63.5 wt% to about 64.5 wt% of iron, and about 35.5 wt% to about 36.5 wt% of nickel. In addition, the metal plate 10 is carbon (C), silicon (Si), sulfur (S), phosphorus (P), manganese (Mn), titanium (Ti), cobalt (Co), copper (Cu), silver ( Ag), vanadium (V), niobium (Nb), indium (In), and antimony (Sb) may further include at least one element in an amount of about 1 wt% or less. The component, content, and weight % of the metal plate 10 are, by selecting a specific region (a*b) on the plane of the metal plate 10, the specimen (a*) corresponding to the thickness (t) of the metal plate 10 . b*t) can be sampled and dissolved in a strong acid, etc. to check the weight% of each component. However, the embodiment is not limited thereto, and the composition by weight may be investigated by various methods for confirming the composition of the metal plate.

The metal plate 10 may be manufactured by a cold rolling method. For example, the metal plate 10 may be formed through melting, forging, hot rolling, normalizing, primary cold rolling, primary annealing, secondary cold rolling and secondary annealing processes, and through these processes, about 30 μm It may have the following thickness. Alternatively, the metal plate 10 may have a thickness of about 30 μm or less through an additional thickness reduction process after the process.

In addition, the step of preparing the metal plate 10 ( S410 ) may further include a thickness reduction step according to the target thickness of the metal plate 10 . The step of reducing the thickness may be a step of reducing the thickness by rolling and/or etching the metal plate 10 .

For example, a metal plate 10 having a thickness of about 30 μm may be required to manufacture a deposition mask for realizing a resolution of 400 PPI or higher, and about 20 μm to manufacture a deposition mask for realizing a resolution of 500 PPI or higher. A metal plate 10 with a thickness of about 30 μm to about 30 μm may be required, and a metal plate 10 with a thickness of about 15 μm to about 20 μm may be required to manufacture a deposition mask capable of implementing a resolution of 800 PPI or higher.

In addition, the step of preparing the metal plate 10 may optionally further include a surface treatment step. In detail, the nickel alloy such as Invar may have a high etching rate in the initial stage of etching, so that the etching factor of each of the faceted holes V1 of each through hole may be reduced. In addition, when etching for forming the facing hole V2 of the through hole, the photoresist layer for forming the facing hole V2 may be peeled off by side etching of the etchant. Accordingly, it may be difficult to form fine-sized through-holes, and it may be difficult to uniformly form the through-holes, thereby reducing manufacturing yield.

Accordingly, a surface treatment layer for surface modification having different components, content, crystal structure, and corrosion rate may be disposed on the surface of the metal plate 10 . Here, the surface modification may refer to a layer made of various materials disposed on the surface to improve the etch factor.

That is, the surface treatment layer is a layer for preventing rapid etching on the surface of the metal plate 10 , and may be a barrier layer having a slower etching rate than that of the metal plate 10 . The surface treatment layer may have a different crystal plane and crystal structure from the metal plate 10 . For example, since the surface treatment layer includes elements different from those of the metal plate 10 , a crystal plane and a crystal structure may be different from each other.

For example, in the same corrosion environment, the surface treatment layer may have a different corrosion potential from the metal plate 10 . For example, when treated with the same etching solution at the same temperature for the same time, the surface treatment layer may have a different corrosion current or corrosion potential from that of the metal plate 10 .

The metal plate 10 may include a surface treatment layer or a surface treatment portion on one side and/or both sides, the whole and/or the effective area. The surface treatment layer or the surface treatment unit may include an element different from that of the metal plate 10 , or may include a metal element having a slow corrosion rate in a greater content than that of the metal plate 10 .

Next, a step of forming a through hole TH by disposing a photoresist layer on the metal plate 10 may be performed.

To this end, a first photoresist layer PR1 may be disposed on one surface of the metal plate 10 to form a small face hole V1 of a through hole on one surface of the metal plate 10 . The patterned first photoresist layer PR1 may be formed on one surface of the metal plate 10 by exposing and developing the first photoresist layer PR1 . That is, the first photoresist layer PR1 including an open portion may be formed on one surface of the metal plate. In addition, an etch stop layer such as a coating layer or a film layer for preventing etching may be disposed on the other surface opposite to one surface of the metal plate 10 .

Next, a first groove may be formed on one surface of the metal plate 10 by half-etching the patterned open portion of the first photoresist layer PR1 . The open portion of the first photoresist layer PR1 may be exposed to an etchant or the like, so that etching may occur in an open portion of one surface of the metal plate 10 in which the first photoresist layer PR1 is not disposed.

The forming of the first groove may be a step of etching the metal plate 10 having a thickness of about 20 μm to about 30 μm until it is about 1/2 thick. The depth of the first groove formed through this step may be about 10 μm to 15 μm. That is, the thickness of the metal plate measured at the center of the first groove formed after this step may be about 10 μm to about 15 μm.

The step of forming the first groove ( S430 ) may be a step of forming the groove by anisotropic etching or a semi-additive process (SAP). In detail, an anisotropic etching or semi-addition method may be used to half-etch the open portion of the first photoresist layer PR1 . Accordingly, in the first groove formed through the half etching, the etching rate in the depth direction (b direction) may be higher than that of the side etching (a direction) than the isotropic etching.

An etch factor of the small face hole V1 may be 2.0 to 3.0. For example, the etching factor of the small face hole V1 may be 2.1 to 3.0. For example, the etch factor of the small face hole V1 may be 2.2 to 3.0. Here, the etching factor is the depth (B) of the etched small face hole / the width (A) of the photoresist layer extending from the island portion IS on the small face hole and protruding in the center direction of the through hole TH (Etching Factor = B/A). A denotes an average value of the width of one side of the photoresist layer protruding on the one surface hole and the width of the other side opposite to the one side.

Next, a second photoresist layer PR2 may be disposed on the other surface of the metal plate 10 . Next, the second photoresist layer PR2 may be exposed and developed to form a patterned second photoresist layer PR2 on the other surface of the metal plate 10 ( S440 ). In addition, an etch stop layer such as a coating layer or a film layer for preventing etching may be disposed on one surface of the metal plate 10 .

The open portion of the second photoresist layer PR2 may be exposed to an etchant or the like, and etching may occur in the open portion of the other surface of the metal plate 10 in which the second photoresist layer PR2 is not disposed. The other surface of the metal plate 10 may be etched by anisotropic etching or isotropic etching.

As the open portion of the second photoresist layer PR2 is etched, the first groove on one surface of the metal plate 10 may be connected to the facing hole V2 to form a through hole.

In the step of forming the through hole, the step of forming the second groove for forming the face hole V2 is performed after the step of forming the first groove for forming the small face hole V1, so that the through hole ( TH) may be formed.

Alternatively, in the step of forming the through hole TH, the step of forming the first groove for forming the small face hole V1 after the step of forming the second groove for forming the face hole V2 is The process may be a step of forming the through hole TH.

Alternatively, the forming of the through hole TH may include forming a first groove for forming the small face hole V1 and forming a second groove for forming the face hole V2. It may be a step of forming the through hole TH simultaneously.

Next, by removing the first photoresist layer PR1 and the second photoresist layer PR2, the facing hole V2 formed on the one surface and the small surface hole V1 formed on the other surface opposite to the one surface ), through the step of forming a deposition mask 100 including a through hole TH formed by a communication portion where the boundary between the large face hole V2 and the small face hole V1 is connected, the deposition mask ( 100) can be formed.

The deposition mask 100 formed through the above steps may include the same material as the metal plate 10 . For example, the deposition mask 100 may include a material having the same composition as that of the metal plate 10 . In addition, the island portion IS of the deposition mask 100 may include the above-described surface treatment layer.

In the deposition mask 100 formed through the above steps, the maximum thickness at the center of the first rib RB1 formed in the effective portion AA may be smaller than the maximum thickness in the ineffective portion UA that is not etched. For example, the maximum thickness at the center of the first rib RB1 may be about 15 μm. For example, the maximum thickness at the center of the first rib RB1 may be less than about 10 μm. However, the maximum thickness in the non-effective portion UA of the deposition mask 100 may be about 20 μm to about 30 μm, or about 15 μm to about 25 μm. That is, the maximum thickness of the ineffective portion UA of the deposition mask 100 may correspond to the thickness of the metal plate 10 prepared in the step of preparing the metal plate 10 .

17 and 18 are diagrams illustrating a deposition pattern formed through a deposition mask according to an embodiment.

Referring to FIG. 17 , in the deposition mask 100 according to the embodiment, the height H1 between one surface of the deposition mask 100 in which the small face hole V1 is formed and the communication part may be about 3.5 μm or less. For example, the height H1 may be about 0.1 μm to about 3.4 μm. For example, the height H1 may be about 0.5 μm to about 3.2 μm. For example, the height H1 may be about 1 μm to about 3 μm.

Accordingly, the distance between the one surface of the deposition mask 100 and the substrate on which the deposition pattern is disposed may be close, thereby reducing deposition defects caused by the shadow effect. For example, when the R, G, and B patterns are formed using the deposition mask 100 according to the embodiment, it is possible to prevent a defect in which different deposition materials are deposited in a region between two adjacent patterns. In detail, when the patterns are formed in the order of R, G, and B from the left as shown in FIG. 18, it is possible to prevent the R pattern and the G pattern from being deposited by a shadow effect in the region between the R pattern and the G pattern. can

In addition, the deposition mask 100 according to the embodiment may reduce the size of the island portion IS in the effective portion. In detail, since the area of the upper surface of the island portion IS, which is a non-etched surface, can be reduced, the organic material can easily pass through the through hole TH during deposition of the organic material, thereby improving deposition efficiency.

Also, the area of the island portion IS may decrease from the center of the effective portions AA1 , AA2 , and AA3 toward the non-effective portion UA. Accordingly, the organic material can be smoothly supplied to the through-holes located at the edges of the effective portions AA1 , AA2 , and AA3 , so that deposition efficiency can be improved and the quality of deposition patterns can be improved.

Features, structures, effects, etc. described in the above-described embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, features, structures, effects, etc. illustrated in each embodiment can be combined or modified for other embodiments by a person skilled in the art to which the embodiments belong. Accordingly, the contents related to such combinations and modifications should be interpreted as being included in the scope of the present invention.

In addition, although the embodiments have been described above, these are merely examples and do not limit the present invention, and those of ordinary skill in the art to which the present invention pertains are exemplified above in a range that does not depart from the essential characteristics of the present embodiment. It can be seen that various modifications and applications that have not been made are possible. For example, each component specifically shown in the embodiments may be implemented by modification. And the differences related to these modifications and applications should be construed as being included in the scope of the present invention defined in the appended claims.

Claims (12)

In the metal material deposition mask for OLED pixel deposition,
The deposition mask includes a deposition part and a non-evaporation part,
The deposition part includes an effective part and an ineffective part,
The effective portion includes a plurality of small face holes formed on one surface of the metal material;
a plurality of facing holes formed on the other surface opposite to the one surface of the metal material;
a plurality of through-holes respectively communicating the face-to-face hole and the face-to-face hole; and
an island portion formed on the other surface of the metal material and positioned between the plurality of through holes; and
It includes a rib between the island portion,
The rib is
a first rib positioned in the longitudinal direction of the first through hole;
a second rib connected to the first rib of the first through hole and positioned in a width direction of the first through hole;
A thickness at the center of the second rib is greater than a thickness at the center of the first rib,
Deposition mask. The method of claim 1,
In the cross section in the longitudinal direction of the facing hole, the first inclination angle connecting one end and the other end of the facing hole with respect to the one surface is,
A deposition mask smaller than a second inclination angle connecting one end and the other end of the facing hole with respect to the one surface in a cross section of the facing hole in a width direction perpendicular to the longitudinal direction. 3. The method of claim 2,
In a cross-section in the longitudinal direction of the facing hole, one end of the facing hole is one end of the center of the first rib,
In a cross-section in the width direction of the face-to-face hole, one end of the face-to-face hole is one end of the center of the second rib. According to claim 1,
The first rib is
located between the first through hole and a second through hole adjacent to the first through hole in the longitudinal direction;
The second rib is
It is positioned between the first through hole and a third through hole adjacent to the first through hole in the width direction,
A distance from the center of the first through hole to the center of the first rib is greater than a distance from the center of the first through hole to the center of the second rib. 3. The method of claim 2,
The first inclination angle and the second inclination angle are in a range of 35° to 55°. According to claim 1,
The small face hole is different from the height in the cross section in the longitudinal direction and the height in the cross section in the width direction.
Deposition mask. 7. The method of claim 6,
A height in the cross section in the longitudinal direction of the carded hole is smaller than a height in the cross section in the width direction of the carded hole. The method according to claim 7, wherein a height of the faceted hole in a cross section in the longitudinal direction is 2.5 μm to 3.0 μm.
The height in the cross section in the width direction of the face hole is 3.5 µm to 4.0 µm, the vapor deposition mask. The deposition mask of claim 1 , wherein an interval between centers of the plurality of through-holes is 48 μm or less. The deposition mask according to claim 1, wherein the through hole has a diameter in a longitudinal direction or a diameter in a width direction of 33 µm or less. The deposition mask of claim 1 , wherein the through hole has a circular shape or an elliptical shape. The deposition mask of claim 1 , wherein the longitudinal direction is a tensile direction, and the width direction is a direction perpendicular to the tensile direction.

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