KR102590890B1 - Metal substrate, metal mask for deposition, and oled pannel using the same - Google Patents

Abstract

An example is a metal plate used to manufacture a deposition mask, including a metal layer; a first surface layer disposed on a first side of the metal layer; and a second surface layer disposed on a second side of the metal layer opposite the first side, wherein the thickness of the metal layer is greater than the thickness of the first surface layer and the second surface layer, and the thickness of the first surface layer is greater than the thickness of the first surface layer. is 10 nm to 30 nm, and the thickness of the second surface layer is 10 nm to 30 nm.
An example is a metal plate used to manufacture a deposition mask, including a metal layer; a first surface layer disposed on a first side of the metal layer; and a second surface layer disposed on a second surface of the metal layer opposite to the first surface, wherein the etch rate of the first surface layer is slower than the etch rate of the metal layer, and the etch rate of the second surface layer is Including one that is slower than the etching rate of the metal layer.
A deposition mask according to an embodiment includes a metal plate including a metal layer including first and second surfaces facing each other; a first surface layer disposed on the first surface; and a second surface layer disposed on the second surface, wherein the metal plate includes a plurality of through holes, and the first surface layer and the second surface layer are open in a region where the through holes are disposed. , the thickness of the first surface layer and the second surface layer are each 10 to 30 nm, the thickness of the metal plate is 50 um or less, and the etch factor of the through hole calculated by Equation 1 below is 2.0 or more. do.
<Equation 1>

In the above equation, B is the width of the etched through hole,
A is the width of the photoresist layer,
The C refers to the depth of the through hole.
Examples include an OLED panel manufactured using the deposition mask.

Description

Metal plate, deposition mask, and OLED panel using the same {METAL SUBSTRATE, METAL MASK FOR DEPOSITION, AND OLED PANNEL USING THE SAME}

The example relates to a metal plate. Specifically, the embodiment relates to a metal plate that can be used in a deposition mask. In more detail, an OLED panel can be manufactured using the deposition mask according to the embodiment.

As display devices with high resolution and low power are required, various display devices such as liquid crystal displays and electroluminescent displays are being developed.

Electroluminescent display devices are attracting attention as next-generation display devices due to their excellent characteristics such as low light emission, low power consumption, and high resolution compared to liquid crystal display devices.

Electric field displays include organic light emitting display devices and inorganic light emitting display devices. That is, depending on the material of the light emitting layer, it can be distinguished into an organic light emitting display device and an inorganic light emitting display device.

Among these, organic light emitting display devices are attracting attention because they have a wide viewing angle, fast response speed, and low power consumption.

The organic material constituting this light-emitting layer can be patterned to form pixels on a substrate using a fine metal mask method.

At this time, the fine metal mask, that is, the deposition mask, may have through holes corresponding to the pattern to be formed on the substrate, and after aligning the fine metal mask on the substrate, the organic material is deposited, forming a red color pixel. (Red), Green, and Blue patterns can be formed.

A metal plate that can be used as a deposition mask may have a plurality of through holes formed through an etching process.

At this time, if the plurality of through holes are not uniform, the uniformity of deposition may be reduced, and as a result, the deposition efficiency of the formed pattern is lowered, leading to a problem of reduced process efficiency.

The embodiment is intended to provide a metal plate capable of forming uniform through holes.

An example is a metal plate used to manufacture a deposition mask, including a metal layer; a first surface layer disposed on a first side of the metal layer; and a second surface layer disposed on a second side of the metal layer opposite the first side, wherein the thickness of the metal layer is greater than the thickness of the first surface layer and the second surface layer, and the thickness of the first surface layer is greater than the thickness of the first surface layer. is 10 nm to 30 nm, and the thickness of the second surface layer is 10 nm to 30 nm.

An example is a metal plate used to manufacture a deposition mask, including a metal layer; a first surface layer disposed on a first side of the metal layer; and a second surface layer disposed on a second surface of the metal layer opposite to the first surface, wherein the etch rate of the first surface layer is slower than the etch rate of the metal layer, and the etch rate of the second surface layer is Including one that is slower than the etching rate of the metal layer.

A deposition mask according to an embodiment includes a metal plate including a metal layer including first and second surfaces facing each other; a first surface layer disposed on the first surface; and a second surface layer disposed on the second surface, wherein the metal plate includes a plurality of through holes, and the first surface layer and the second surface layer are open in a region where the through holes are disposed. , the thickness of the first surface layer and the second surface layer are each 10 to 30 nm, the thickness of the metal plate is 50 um or less, and the etch factor of the through hole calculated by Equation 1 below is 2.0 or more. do.

<Equation 1>

In the above equation, B is the width of the etched through hole,

A is the width of the photoresist layer,

The C refers to the depth of the through hole.

Examples include an OLED panel manufactured using the deposition mask.

A metal plate according to an embodiment may include a metal layer and a surface layer disposed on the metal layer.

As the surface layer is disposed on the first side of the metal layer and the second side opposite the first side, the etching rate on the first and second sides of the metal layer can be slowed.

Accordingly, the metal plate including the surface layer can form uniform through holes.

In other words, the metal plate used to manufacture the deposition mask includes through holes with improved uniformity, so the uniformity of the pattern formed through this can be improved, and the process efficiency is improved as the deposition efficiency of the pattern increases. It can be.

Therefore, the OLED panel manufactured using the deposition mask according to the embodiment can have excellent pattern deposition efficiency and improved deposition uniformity.

Figures 1 and 2 are conceptual diagrams for explaining a process for depositing an organic material on a substrate.
Figures 3 and 4 are front views of a metal plate.
FIG. 5 is a cross-sectional view taken along line A-A' of FIG. 3.
6 to 10 are diagrams showing the manufacturing process of a metal plate.
Figure 11 is a photograph of a through hole in a metal plate according to an embodiment.
Figure 12 is a photograph of a through hole in a metal plate according to a comparative example.
Figures 13 and 14 are cross-sectional views of an etching process in an embodiment.
Figure 15 is a cross-sectional view of the etching process of a comparative example.
Figure 16 is a graph showing the etching rate according to the etching depth of Examples and Comparative Examples.

Hereinafter, embodiments will be described in detail with reference to the attached drawings.

In the description with reference to the accompanying drawings, like reference numerals are assigned to like components, and duplicate description thereof is omitted.

Terms such as first and second may be used to describe components, but the components are not limited to these terms and are used only for the purpose of distinguishing one component from another component.

In addition, when a part is said to “include” a certain component, this does not mean that other components are excluded, but that other components can be added, unless specifically stated to the contrary.

The thickness or size of each layer (film), region, pattern, or structure in the drawings may be modified for clarity and convenience of explanation, and therefore does not entirely reflect the actual size.

A process for depositing an organic material on a substrate will be described with reference to FIGS. 1 and 2 .

Figure 1 is a diagram showing an organic material deposition apparatus including a metal plate 100 as a deposition mask according to an embodiment.

The organic material deposition apparatus may include a metal plate 100 used as a deposition mask, a mask frame 200, a substrate 300, an organic material deposition container 400, and a vacuum chamber 500.

The deposition mask may be the metal plate 100 according to the embodiment. The metal plate 100 may include a plurality of through holes. At this time, the through hole may be formed to correspond to the pattern to be formed on the substrate.

The mask frame 200 may include an opening. A plurality of through holes of the metal plate 100 may be disposed in an area corresponding to the opening. Accordingly, the organic material supplied to the organic material deposition container 400 may be deposited on the substrate 300.

The deposition mask may be placed and fixed on the mask frame 200. For example, the deposition mask may be tensioned and fixed on the mask frame 200 by welding.

The substrate 300 may be a substrate used in manufacturing a display device. Patterns of red, green, and blue may be formed on the substrate 300 to form pixels of the three primary colors of light.

The organic material deposition vessel 400 may be a crucible. An organic material may be placed inside the crucible.

As a heat source and/or current is supplied to the crucible within the vacuum chamber 500, the organic material may be deposited on the substrate 100.

Figure 2 is an enlarged view of one through hole of the metal plate 100.

The metal plate 100 may include a first surface 101 and a second surface 102 opposing the first surface.

The first surface 101 of the metal plate 100 may include a first surface hole (V1), and the second surface 102 of the metal plate 100 may include a second surface hole (V2).

The through hole may be formed by a connection portion CA through which the first surface hole V1 and the second surface hole V2 communicate.

The width of the first surface hole (V1) may be larger than the width of the second surface hole (V2). At this time, the width of the first surface hole (V1) may be measured from the first surface (101), and the width of the second surface hole (V2) may be measured from the second surface (102).

The first surface hole V1 may be disposed toward the substrate 300 . Accordingly, the first surface hole V1 may have a shape corresponding to the deposit D, that is, the pattern.

The second surface hole V2 may be disposed toward the organic material deposition container 400 . Accordingly, the second surface hole (V2) can accommodate the organic material supplied from the organic material deposition container 400 in a wide width, and the first surface hole (V1) has a width smaller than the second surface hole (V2). Through this, a fine pattern can be quickly formed on the substrate 300.

Figures 3 and 4 are front views of the metal plate 100.

The metal plate 100 may include a plurality of through holes.

For example, referring to FIG. 3, the through holes may be arranged in a row on the vertical axis and in a row on the horizontal axis.

For example, referring to FIG. 4, the through holes may be arranged in a row on the vertical axis and may be arranged to stagger each other on the horizontal axis.

The through hole may have a first diameter measured in the longitudinal direction and a second diameter measured in the transverse direction, which may correspond to each other or may be different from each other. The through hole may be round.

Figure 5 is an enlarged cross-sectional view of a plurality of through holes.

Referring to FIG. 5, the metal plate 100 used to manufacture a deposition mask may include a metal layer 100a and a surface layer. For example, the metal plate 100 includes the metal layer 100a, a first surface layer 110 disposed on the first surface 101 of the metal layer 100a, and a first surface layer 110 facing the first surface 101. It may include a second surface layer 120 disposed on the second side 102.

The thickness of the metal layer 100a may be greater than the surface layer. For example, the thickness T1 of the metal layer 100a may be greater than the thickness T2 of the first surface layer 110 and the thickness T3 of the second surface layer 120.

The thickness of the metal plate 100 may be 10㎛ to 50㎛. For example, the thickness of the metal plate 100 may be 10㎛ to 30㎛. If the thickness of the metal plate 100 is less than 10㎛, manufacturing efficiency may be low.

If the thickness of the metal plate 100 exceeds 50㎛, the process efficiency for forming the through hole may be reduced.

The thickness T1 of the metal layer 100a may be 50 μm or less. For example, the thickness T1 of the metal layer 100a may be 30 μm or less.

The first surface layer 110 and the second surface layer 120 may have thicknesses corresponding to each other. Here, corresponding may include errors due to tolerance.

The thickness T2 of the first surface layer 110 may be 10 nm to 30 nm. For example, the thickness T2 of the first surface layer 110 may be 10 nm to 20 nm.

When the thickness T2 of the first surface layer 110 is less than 10 nm, the effect of lowering the etch rate on the first surface 101 is reduced, and thus the uniformity of the through hole may be reduced.

For example, when the thickness T2 of the first surface layer 110 is less than 10 nm, through holes with large variations in thickness and/or width are formed, so that the pattern formed by the metal plate having the through holes It may not be uniform, which may reduce the manufacturing efficiency of the display device.

In addition, when the thickness T2 of the first surface layer 110 is less than 10 nm, the effect of reducing the etch rate on the first surface 101 is reduced, so it may be difficult to form a fine-sized through hole. .

In addition, when the thickness T2 of the first surface layer 110 is less than 10 nm, as the surface roughness of the inner peripheral surface of the first surface hole V1 increases, the deposition pattern formed through the first surface hole V1 The quality may decrease, and process efficiency may decrease accordingly.

Meanwhile, if the thickness T2 of the first surface layer 110 is greater than 30 nm, manufacturing efficiency may be reduced.

The thickness T3 of the second surface layer 120 may be 10 nm to 30 nm. For example, the thickness T3 of the second surface layer 120 may be 10 nm to 20 nm. When the thickness T3 of the second surface layer 120 is less than 10 nm, the effect of lowering the etch rate on the second surface 102 is reduced, and thus the uniformity of the through hole may be reduced. For example, when the thickness T3 of the second surface layer 120 is less than 10 nm, through holes with large variations in thickness and/or width are formed, so that the pattern formed by the metal plate having the through holes It may not be uniform, which may reduce the manufacturing efficiency of the display device.

In addition, when the thickness T3 of the second surface layer 120 is less than 10 nm, the effect of lowering the etch rate on the second surface 102 is reduced, so it may be difficult to form a fine-sized through hole. .

Additionally, when the thickness T3 of the second surface layer 120 is less than 10 nm, the surface roughness of the inner peripheral surface of the second surface hole V2 may increase.

Meanwhile, if the thickness T3 of the second surface layer 120 is greater than 30 nm, manufacturing efficiency may be reduced.

The metal layer 100a may include a metal material. For example, the metal layer 100a may include a nickel alloy. For example, the metal layer 100a may be an alloy of nickel and iron. For example, the metal layer 100a may be Invar containing 36% by weight of nickel and 64% by weight of iron. However, the metal layer 100a is not limited thereto, and of course may include various metal materials.

The metal layer 100a may have a different elemental composition from that of the first surface layer 110. Additionally, the metal layer 100a may have a different elemental composition from that of the second surface layer 120.

For example, the first surface layer 110 and the second surface layer 120 may include oxygen element.

The oxygen content of the first surface layer 110 may be higher than the oxygen content of the metal layer 100a. The oxygen content of the second surface layer 120 may be higher than the oxygen content of the metal layer 100a.

In the metal plate according to the embodiment, the oxygen content of the first surface layer 110 and the second surface layer 120 is measured to be greater than that of the metal layer 100a through X-ray Photoelectron Spectroscopy (XPS). did. The high oxygen content in the first surface layer 110, as measured through the X-ray photoelectron spectroscopy, rapidly decreased starting from the first surface 101 of the metal layer 100a. In addition, the high oxygen content in the second surface layer 120, measured through X-ray photoelectron spectroscopy, rapidly decreased starting from the second surface 102 of the metal layer 100a.

The first surface layer 110 and the second surface layer 120 may include at least one of metal oxide and metal hydroxide. For example, the first surface layer 110 and the second surface layer 120 may include iron oxide and nickel oxide as metal oxides. For example, the first surface layer 110 and the second surface layer 120 may include iron hydroxide and nickel hydroxide as metal oxides. In detail, the first surface layer 110 may include at least one of FeO, NiO, FeOH, and NiOH. Additionally, the second surface layer 110 may include at least one of FeO, NiO, FeOH, and NiOH.

The metal plate 100 may have different widths of through holes depending on the thickness direction of the through holes. For example, the width W1 of the first surface hole V1 may be larger than the width W3 of the connection portion CA. In detail, the width of the through hole V1 may decrease as it moves from the first surface 101 toward the connection portion CA. In more detail, the width of the through hole V1 may gradually decrease as it moves from the first surface 101 toward the connection portion CA.

For example, the width W2 of the second surface hole V2 may be larger than the width W3 of the connection portion CA. In detail, the width of the through hole V2 may decrease as it moves from the second surface 102 toward the connection portion CA. In more detail, the width of the through hole V2 may gradually decrease as it moves from the second surface 102 toward the connection portion CA.

The height H2 of the second surface hole V2 may be greater than the height H1 of the first surface hole V1.

Meanwhile, adjacent to the first surface hole (V1), a third surface hole (V3) formed on the first surface 101 is adjacent to the second surface hole (V1) and is formed on the second surface 102. By communicating with the fourth surface hole V4 formed in the connection portion CA, a through hole can be formed.

The width W5 of the fourth through hole V4 may be larger than the width W4 of the third through hole V3. For example, the width W4 of the third through hole V3 may be larger than the width W6 of the connection portion CA. In detail, the width of the third surface hole V3 may decrease as it moves from the first surface 101 toward the connection portion CA. In detail, the width of the third surface hole V3 may gradually decrease as it moves from the first surface 101 toward the connection portion CA.

For example, the width W5 of the fourth surface hole V4 may be larger than the width W6 of the connection portion CA. In detail, the width of the fourth surface hole V4 may decrease as it moves from the second surface 102 toward the connection portion CA. In more detail, the width of the fourth surface hole V4 may gradually decrease as it moves from the second surface 102 toward the connection portion CA.

The height H4 of the fourth surface hole V4 may be greater than the height H3 of the third surface hole V3.

The etching rate of the first surface layer 110 may be slower than the etching rate of the metal layer 100a. The etching rate of the second surface layer 120 may be slower than the etching rate of the metal layer 100a.

The deposition mask made of only the metal layer 100a has a high etching rate of the first surface 101 and the second surface 102 of the metal layer 100a in contact with the etchant, so that the first surface 101 and the second surface 102 are in contact with the etchant. The width of the through groove formed on the second surface 102 may be increased. Accordingly, it is difficult to form through grooves with fine patterns, and manufacturing yield may be reduced. Additionally, the uniformity of the plurality of through holes may be reduced. Therefore, the OLED panel manufactured through this may have low pattern deposition efficiency and reduced pattern deposition uniformity.

The first surface layer 110 and the second surface layer 120 may contain oxygen, and the etching rate may be slower than that of the metal layer 100a. Additionally, in the embodiment, the first surface layer 110 and the second surface layer 120 are each arranged to have a thickness of 10 nm to 30 nm on the metal layer 110a, thereby forming a fine through hole.

For example, in the metal plate according to the embodiment, when the first surface layer 110 and the second surface layer 120 are each arranged to have a thickness of 10 nm to 30 nm, the width (W1) of the first surface hole (V1) ) and the width W4 of the third through hole V3 may correspond, and the width W2 of the second surface hole V2 may correspond to the width W5 of the fourth through hole V4. . For example, in the metal plate according to the embodiment, when the first surface layer 110 and the second surface layer 120 are each arranged to have a thickness of 10 nm to 30 nm, the height (H1) of the first surface hole (V1) ) may correspond to the height H3 of the third surface hole V3, and the height H2 of the second surface hole V2 may correspond to the height H4 of the fourth surface hole V4. That is, the uniformity of the width and height of the plurality of through holes can be improved.

That is, the metal plate according to the embodiment may have a slow etching rate in the area where the first surface layer 110 and the second surface layer 120 are disposed, so that the pore hole can be formed to have a small width and a deep thickness. . Accordingly, it is possible to prevent defilming of the photoresist layer that may occur due to rapid etching on the metal surface.

In addition, the metal plate used to manufacture the deposition mask according to the embodiment can control the etching speed on the surface, so the manufacturing yield of through holes with fine patterns can be improved, and the uniformity of a plurality of through holes can be improved. You can. Accordingly, the OLED panel manufactured with this deposition mask can have excellent pattern deposition efficiency and improved deposition uniformity. In addition, the surface layer according to the embodiment includes at least one of a metal oxide and a metal hydrate. , the adhesion of the photoresist layer can be improved, and defilming or separation of the photoresist layer can be prevented during the etching process. In detail, the ceramic-based surface layer may have greater adhesion with the photoresist layer than the adhesion between the metal layer and the photoresist layer. Accordingly, the metal plate according to the embodiment can improve the manufacturing yield and process efficiency of a plurality of through holes.

The metal plate used to manufacture the deposition mask according to the embodiment may include an external layer defined as a thickness range of 1 μm or less from the surface of the metal plate and an internal layer other than the external layer. In detail, the metal plate may include an outer layer disposed in an area corresponding to a thickness of 1 μm or less from the surface of the metal plate, that is, an externally exposed surface, and an inner layer that is an area excluding the outer layer of the metal plate.

In the metal plate used to manufacture the deposition mask according to the embodiment, the internal layer and the external layer may have different etch rates.

For example, the etch rate of the outer layer may be 0.03 um/sec or less. For example, the etch rate of the outer layer may be 0.01 to 0.03 um/sec or less. For example, the etch rate of the outer layer may be 0.02 to 0.03 um/sec or less.

For example, the etch rate of the inner layer may be 0.03 to 0.06 um/sec. For example, the etch rate of the inner layer may be 0.03 to 0.05 um/sec.

That is, in the metal plate used to manufacture the deposition mask according to the embodiment, the etching speed of the outer layer may be slower than the etching speed of the inner layer, and thus the etching characteristics of the through hole may be excellent. In addition, the OLED panel manufactured using the deposition mask according to the embodiment has excellent pattern deposition efficiency and deposition uniformity can be improved.

The metal plate used to manufacture the deposition mask according to the embodiment may have an etch factor of 2.0 or more.

Accordingly, the metal plate according to the embodiment may have excellent through-hole etching characteristics, thereby preventing a decrease in manufacturing yield due to lifting or separation of the photoresist layer.

For example, the etch factor can be calculated using Equation 1 below.

<Equation 1>

In the above equation, B is the width of the through hole after etching, A is the width of the photoresist layer, and C is the depth of the through hole.

The larger the etch factor, the better the etching characteristics in the thickness direction of the metal layer, that is, in the depth direction of the through hole.

The smaller the etch factor, the larger the width of the through hole. That is, as the etch factor becomes smaller and the width of the through hole increases, the photoresist layer may be lifted or separated.

The width of the through hole may be 20㎛ or more. For example, the width of the through hole may be 20㎛ to 40㎛. For example, at least one of the width W1 of the first surface hole and the width W2 of the second surface hole may have a width of 20 μm or more. For example, at least one of the width W1 of the first surface hole and the width W2 of the second surface hole may have a width of 20㎛ to 40㎛.

When the width of the through hole is less than 20㎛, the effect of reducing the etching rate due to the surface layer before and after heat treatment may be small.

6 to 10, the manufacturing process of the metal plate according to the embodiment will be described.

Referring to FIG. 6, the metal layer 100a may have a thickness T1 of 50 μm or less. For example, the metal layer 100a may have a thickness T1 of 30 μm or less. Here, the thickness of the metal layer 100a may be the thickness measured after the rolling process.

Referring to FIG. 7, a surface layer may be formed on the metal layer 100a. For example, as the metal layer 100a is heat treated, a surface layer may be formed on the metal layer 100a. In detail, as the metal layer 100a is heat treated in an oxygen atmosphere, the first surface layer 110 is formed on the first surface 101 of the metal layer 100a, and the second surface of the metal layer 100a ( The second surface layer 120 may be formed on 102). For example, the first surface layer 110 and the second surface layer 120 can be formed simultaneously through the heat treatment process, thereby improving process efficiency. In addition, the first surface layer 110 and the second surface layer 120 may be disposed on the metal layer 100a with thicknesses corresponding to each other, so that the first surface 101 and the second surface 101 of the metal layer 100a The etching speed of the surface 102 may be reduced. However, the embodiment is not limited to this, and of course, the surface layer can be formed by anodizing, plasma treatment, etc.

Referring to FIG. 8, a first photoresist layer (P1) may be disposed on the first surface layer 110, and a second photoresist layer (P2) may be disposed on the second surface layer 120.

In detail, a photoresist material is applied on the first surface layer 110 and the second surface layer 120, respectively, and the first photoresist layer (P1) and the second photoresist layer are formed through an exposure and development process. (P2) can be placed separately.

As the first photoresist layer (P1) and the second photoresist layer (P2) are arranged so that the width of the open area is different, the first surface hole (V1) formed on the first surface 101 and The width of the second surface hole V2 formed on the second surface 102 may be different.

Referring to FIG. 9, the first surface hole (V1) and the second surface hole (V2) are formed by an etching process, and the first surface hole (V1) and the second surface hole (V2) are formed by the connection portion (CA). ) is communicated, a through hole may be formed.

For example, the etching process may be performed by a wet etching process. Accordingly, the first surface 101 and the second surface 102 can be etched simultaneously. For example, the wet etching process may be performed at about 45°C using an etchant containing iron chloride. At this time, the etchant may contain 35 to 45% by weight of FeCl ₃ . In detail, the etchant may contain 36% by weight of FeCl ₃ . For example, the specific gravity of the etchant containing 43% by weight of FeCl ₃ may be 1.47 at 20°C. The specific gravity of the etchant containing 41% by weight of FeCl ₃ may be 1.44 at 20°C. The specific gravity of the etchant containing 38% by weight of FeCl ₃ may be 1.39 at 20°C.

Referring to FIG. 10, as the first photoresist layer (P1) and the second photoresist layer (P2) are removed, the first surface layer 110 and the second surface layer 120 are formed on the metal layer 100a. ) is disposed, and a metal plate having a plurality of through holes can be formed.

Hereinafter, the present invention will be described in more detail through examples and comparative examples. These embodiments are merely provided as examples to explain the present invention in more detail. Therefore, the present invention is not limited to these examples.

<Experimental Example 1: Evaluation of uniformity and roughness of through holes>

Example One

After forming a 20 nm complementary surface on the Invar metal layer, a through hole was formed through an etching process.

At this time, the etching process was carried out at 45°C as a wet etching process, and the etchant contained 36% by weight of FeCl ₃ .

Comparative example One

After forming a 5 nm surface layer on the Invar metal layer, a through hole was formed through an etching process.

At this time, the etching process was carried out under the same conditions as in Example 1.

11 and 12 are photographs of through holes formed according to Example 1 and Comparative Example 1.

Referring to FIG. 11, it can be seen that the surface roughness of the through hole formed according to Example 1 is low. That is, the inner peripheral surface of the through hole can be a smooth curve, thereby improving the uniformity of the shape of the pattern deposited.

Meanwhile, referring to FIG. 12, it can be seen that the through hole formed according to Comparative Example 1 has a high surface roughness. That is, the inner peripheral surface of the through hole may have an uneven shape, which may deteriorate the uniformity of the shape of the pattern deposited.

According to Example 1 and Comparative Example 1, it was confirmed that the uniformity of the through hole was improved when the thickness of the surface layer was 10 nm or more.

<Experimental Example 2: Evaluation of etch factor and etch rate>

Example 2 Example 3 Comparative Example 2 etch factor 2.12 2.00 1.34 internal etch rate
(㎛/sec) 0.05 0.05 0.05 Etch rate of surface
(㎛/sec) 0.02 0.03 0.1

Table 1 shows the etch factor and etch rate according to Examples 2, 3, and Comparative Example 2.

In Table 1, the surface etch rate indicates the etch rate observed at a thickness of 1 μm or less from the surface of the metal plate. In other words, the etch rate of the surface represents the etch rate of the outer layer.

In Table 1, the internal etching rate indicates the etching rate observed from a thickness of 1 μm to a thickness of 10 μm from the surface of the metal plate. In other words, the etching rate of the surface represents the etching rate of the inner layer.

Referring to Table 1 and FIG. 16, it can be seen that in Comparative Example 2, the surface etch rate was faster than the internal etch rate. In detail, in Comparative Example 2, it can be seen that the etch rate of the outer layer is faster than the etch rate of the inner layer. That is, in Comparative Example 2, it can be seen that the etching speed on the surface with a large contact area of the etchant is faster than the internal etching speed.

On the other hand, in Examples 2 and 3, it can be seen that the internal etching speed is faster than the surface etching speed. In detail, in Examples 2 and 3, it can be seen that the etch rate of the inner layer is faster than the etch rate of the outer layer. That is, in Examples 2 and 3, as the surface layer containing oxygen element is disposed on the metal layer, the etching rate on the surface of the metal plate may be slower than the etching rate on the inside of the metal plate. Accordingly, the metal plate according to the embodiment can form fine through holes.

FIG. 13 is a cross-sectional view of a through hole according to Example 2, and FIG. 14 is a view of a through hole according to Example 3.

Referring to Figures 13 and 14, it can be seen that Examples 2 and 3 had a high etch factor of 2.0 or more, so the width of the through hole was small and the etch characteristics were excellent in the depth direction. Accordingly, deformation of the photoresist layer can be prevented. Additionally, patterns that can be formed using the metal plates according to Examples 2 and 3 may be capable of implementing fine patterns.

Referring to FIG. 15, it can be seen that in the through hole according to Comparative Example 2, as the through holes overlap, the photoresist layer defilming occurs. Accordingly, when the etch factor is less than 2.0, it can be seen that the manufacturing yield and process efficiency of through holes are reduced.

A deposition mask according to an embodiment includes a metal plate comprising a metal layer including first and second surfaces facing each other, a first surface layer disposed on the first surface, and a second surface layer disposed on the second surface. It includes, the metal plate includes a plurality of through holes, the first surface layer and the second surface layer include open in the area where the through hole is disposed, and the thickness of the first surface layer and the second surface layer Each may be 10 to 30 nm, the thickness of the metal plate may be 50 um or less, and the etch factor of the through hole may be 2.0 or more.

In the deposition mask according to the embodiment, a surface layer may be disposed on the metal layer before forming the through hole. Accordingly, the surface layer is not disposed on the area where the through hole is disposed, but can be opened.

The inner region of the through hole may have a different composition of elements from the surface layer. For example, the oxygen content of the first surface layer may be higher than the oxygen content included in the connection portion of the through hole. For example, the oxygen content of the second surface layer may be higher than the oxygen content included in the connection portion of the through hole.

That is, the deposition mask according to the embodiment may have a structural feature in which the etching speed is gradually improved from the outer layer to the inner layer in the etching process for forming the through hole, thereby improving the etching efficiency and improving the thickness of the through hole. Uniformity can be improved.

In addition, the OLED panel manufactured using the deposition mask according to the embodiment has excellent pattern deposition efficiency and deposition uniformity can be improved.

The features, structures, effects, etc. described in the above-described embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. illustrated in each embodiment can be combined or modified and implemented in other embodiments by a person with ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to such combinations and modifications should be construed as being included in the scope of the present invention.

In addition, although the description has been made focusing on the embodiments above, this is only an example and does not limit the present invention, and those skilled in the art will understand the above examples without departing from the essential characteristics of the present embodiments. You will be able to see that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. And these variations and differences in application should be construed as being included in the scope of the present invention as defined in the appended claims.

Claims (13)

A metal plate comprising a first side and a second side opposite the first side,
The metal plate includes a first surface hole formed on the first surface; a second surface hole formed on the second surface; and a plurality of through holes formed by a connection part communicating with the first surface hole and the second surface hole,
The width of the first surface hole is greater than the width of the second surface hole,
The metal plate is,
a first surface layer from 10 nm to 30 nm deep on the first side;
a second surface layer to a depth of 10 nm to 30 nm on the second side; and
comprising a metal layer between the first surface layer and the second surface layer,
The thickness of the metal plate is 10㎛ to 50㎛,
The thickness of the metal layer is greater than the thickness of the first surface layer and the second surface layer,
The metal layer includes Invar,
The oxygen content of the first surface layer and the oxygen content of the second surface layer are greater than the oxygen content of the metal layer,
The first surface layer and the second surface layer include at least one of FeO, NiO, FeOH, and NiOH,
Mask for deposition. delete According to clause 1,
The etch rate of the first surface layer is slower than the etch rate of the metal layer,
A deposition mask, wherein the etching rate of the second surface layer is slower than the etching rate of the metal layer. According to clause 3,
A deposition mask wherein the etch factor of the through hole calculated by Equation 1 below is 2.0 or more.
<Equation 1>

In the above equation, B is the width of the etched through hole,
A is the width of the photoresist layer,
The C refers to the depth of the through hole. According to clause 3,
A deposition mask wherein at least one of the first surface hole and the second surface hole has a width of 20㎛ or more. According to clause 1,
A deposition mask wherein at least one of the first surface hole and the second surface hole has a width of 20㎛ to 40㎛. delete According to clause 1,
the first surface layer is from 10 nm to 20 nm deep on the first side,
The second surface layer is a mask for deposition to a depth of 10 nm to 20 nm on the second side. delete delete delete delete delete

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