KR20170096373A - Metal substrate, metal mask for deposition, and oled pannel using the same - Google Patents

Abstract

According to an embodiment of the present invention, a metal plate used for manufacturing a mask for deposition comprises: a metal layer; a first surface layer disposed on a first surface of the metal layer; and a second surface layer disposed on a second surface facing the first surface of the metal layer. The thickness of the metal layer is greater than that of the first and second surface layers, the thickness of the first surface layer is 10 to 30 nm, and the thickness of the second surface layer is 10 to 30 nm. The metal layer includes a nickel alloy. The metal plate of the present invention can form a uniform through hole.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a metal plate, an evaporation-use mask, and an OLED panel using the same,

An embodiment relates to a metal plate. In detail, the embodiment relates to a metal plate which can be used for a vapor deposition mask. More specifically, an OLED panel can be manufactured using the deposition mask according to the embodiment.

2. Description of the Related Art [0002] As display devices having high resolution and low power are required, various display devices such as a liquid crystal display device and an electroluminescent display device have been developed.

An electroluminescent display device is attracting attention as a next-generation display device due to excellent characteristics such as low light emission, low power consumption, and high resolution as compared with a liquid crystal display device.

An electric field display device includes an organic light emitting display device and an inorganic light emitting display device. That is, the organic light emitting display device and the inorganic light emitting display device can be distinguished according to the material of the light emitting layer.

Of these, organic light emitting display devices are attracting attention because they have a wide viewing angle, have a fast response speed, and are required to have low power.

The organic material constituting the light emitting layer may be patterned to form pixels on the substrate by a fine metal mask method.

At this time, the fine metal mask, that is, the deposition mask may have a through-hole corresponding to the pattern to be formed on the substrate, so that after the fine metal mask is deflected on the substrate, as the organic material is deposited, (Red), green (green), and blue (blue) patterns can be formed.

A plurality of through holes may be formed in the metal plate which can be used as a mask for deposition by an etching process.

At this time, if the plurality of through holes are not uniform, the uniformity of the deposition may be lowered, and the deposition efficiency of the pattern formed thereby may be lowered, thereby lowering the process efficiency.

The embodiment is intended to provide a metal plate capable of forming a uniform through hole.

An embodiment of the present invention is a metal plate used for manufacturing an evaporation mask, comprising: a metal layer; A first surface layer disposed on a first surface of the metal layer; And a second surface layer disposed on a second surface opposite to the first surface of the metal layer, wherein the thickness of the metal layer is greater than the thickness of the first surface layer and the second surface layer, and the thickness of the first surface layer Is 10 nm to 30 nm, and the thickness of the second surface layer is 10 nm to 30 nm.

An embodiment of the present invention is a metal plate used for manufacturing an evaporation mask, comprising: a metal layer; A first surface layer disposed on a first surface of the metal layer; And a second surface layer disposed on a second surface opposite to the first surface of the metal layer, wherein the etch rate of the first surface layer is slower than the etch rate of the metal layer, Which is slower than the etch rate of the metal layer.

An evaporation mask according to an embodiment includes a metal layer, a metal layer including a first surface and a second surface opposed to each other; A first surface layer disposed on the first surface; And a second surface layer disposed on the second surface, wherein the metal plate includes a plurality of through holes, wherein the first surface layer and the second surface layer are opened in an area where the through holes are arranged , The first surface layer and the second surface layer each have a thickness of 10 to 30 nm and the thickness of the metal plate is 50um or less and the etch factor of the through hole calculated by the following formula 1 is 2.0 or more do.

<Formula 1>

Where B is the width of the etched through hole,

A is the width of the photoresist layer,

And C represents the depth of the through hole.

The embodiment includes an OLED panel made of the evaporation mask.

The metal plate according to an embodiment may include a metal layer and a surface layer disposed on the metal layer.

As the surface layer is disposed on the first surface of the metal layer and the second surface opposite to the first surface, the etching rate at the first surface and the second surface of the metal layer can be slowed down.

Accordingly, the metal plate including the surface layer can form a uniform through-hole.

That is, since the metal plate used for manufacturing the deposition mask includes the through holes having improved uniformity, the uniformity of the pattern formed through the through holes can be improved and the process efficiency can be improved as the pattern deposition efficiency is increased .

Therefore, the OLED panel fabricated using the deposition mask according to the embodiment has an excellent pattern deposition efficiency and can improve the deposition uniformity.

FIGS. 1 and 2 are conceptual diagrams illustrating a process of depositing an organic material on a substrate.
3 and 4 are views showing a front view of the metal plate.
5 is a sectional view taken along the line A-A 'in Fig.
6 to 10 are views showing a manufacturing process of a metal plate.
11 is a photograph of the through hole of the metal plate according to the embodiment.
12 is a photograph of a through hole of a metal plate according to a comparative example.
13 and 14 are views showing a cross-sectional view in the etching process of the embodiment.
15 is a cross-sectional view of the etching process of the comparative example.
16 is a graph showing etching rates according to etch depths of the embodiment and the comparative example.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings.

In the following description with reference to the accompanying drawings, the same constituent elements are denoted by the same reference numerals, and a duplicate description thereof will be omitted.

The terms first, second, etc. may be used to describe a component, but the components are not limited to the terms and are used only for the purpose of distinguishing one component from another.

Also, when a part is referred to as "comprising ", it means that it can include other components as well, without excluding other components unless specifically stated otherwise.

The thickness or the size of each layer (film), region, pattern or structure in the drawings may be modified for clarity and convenience of explanation, and thus does not entirely reflect the actual size.

The process of depositing an organic material on a substrate will be described with reference to FIGS. 1 and 2. FIG.

1 is a view showing an organic substance deposition apparatus in which a metal plate 100 according to an embodiment is included as an evaporation mask.

The organic substance deposition apparatus may include a metal plate 100 used as an evaporation mask, a mask frame 200, a substrate 300, an organic material deposition container 400, and a vacuum chamber 500.

The vapor deposition mask may be a metal plate 100 according to an embodiment. The metal plate 100 may include a plurality of through holes. At this time, the through holes may be formed to correspond to patterns to be formed on the substrate.

The mask frame 200 may include openings. The plurality of through holes of the metal plate 100 may be disposed on a region corresponding to the opening. Accordingly, the organic material supplied to the organic material deposition container 400 can be deposited on the substrate 300.

The vapor deposition mask may be disposed and fixed on the mask frame 200. For example, the vapor deposition mask may be tensioned and secured by welding on the mask frame 200.

The substrate 300 may be a substrate used for manufacturing a display device. Red, green, and blue patterns may be formed on the substrate 300 to form pixels that are three primary colors of light.

The organic material deposition container 400 may be a crucible. An organic material may be disposed inside the crucible.

As the heat source and / or current is supplied to the crucible in the vacuum chamber 500, the organic material may be deposited on the substrate 100.

FIG. 2 is an enlarged view of one through hole of the metal plate 100.

The metal plate 100 may include a first surface 101 and a second surface 102 facing the first surface.

The first face 101 of the metal plate 100 may include a first face hole V1 and the second face 102 of the metal plate 100 may include a second face hole V2.

The through hole may be formed by a connecting portion CA through which the first face hole (V1) and the second face hole (V2) communicate.

The width of the first face hole (V1) may be greater than the width of the second face hole (V2). At this time, the width of the first face hole (V1) may be measured on the first face (101), and the width of the second face hole (V2) may be measured on the second face (102).

The first face hole (V1) may be disposed toward the substrate (300). Accordingly, the first face hole (V1) may have a shape corresponding to the deposition material (D), that is, the pattern.

The second face hole (V2) may be disposed toward the organic material deposition container (400). Accordingly, the second face hole V2 can accommodate the organic material supplied from the organic material deposition container 400 in a wide width, and the first face hole V1, which is smaller in width than the second face hole V2, A minute pattern can be formed on the substrate 300 quickly.

Figs. 3 and 4 are views showing a front view of the metal plate 100. Fig.

The metal plate 100 may include a plurality of through holes.

For example, referring to FIG. 3, the through-holes may be arranged in a row in the vertical axis, and may be arranged in a row in the horizontal axis.

For example, referring to FIG. 4, the through-holes may be arranged in a row in the vertical axis and staggered in the horizontal axis.

The through-hole may have a first diameter measured in the longitudinal direction and a second diameter measured in the lateral direction correspond to each other or may be different from each other. The through-hole may be rounded.

5 is an enlarged view of a cross section of a plurality of through holes.

Referring to FIG. 5, the metal plate 100 used for fabricating the deposition mask may include a metal layer 100a and a surface layer. For example, the metal plate 100 includes a metal layer 100a, a first surface layer 110 disposed on the first surface 101 of the metal layer 100a, and a second surface layer 110 facing the first surface 101. [ And a second surface layer 120 disposed on the two surfaces 102.

The thickness of the metal layer 100a may be larger than that of the surface layer. For example, the thickness T1 of the metal layer 100a may be greater than the thickness T2 of the first surface layer 110 and the thickness T3 of the second surface layer 120.

The thickness of the metal plate 100 may be 10 to 50 탆. For example, the thickness of the metal plate 100 may be 10 탆 to 30 탆. If the thickness of the metal plate 100 is less than 10 mu m, the manufacturing efficiency may be low.

If the thickness of the metal plate 100 is more than 50 占 퐉, the process efficiency for forming the through holes may be lowered.

The thickness T1 of the metal layer 100a may be 50 탆 or less. For example, the thickness T1 of the metal layer 100a may be 30 占 퐉 or less.

The first surface layer 110 and the second surface layer 120 may have a thickness corresponding to each other. Here, the correspondence may include an error due to the tolerance.

The thickness T2 of the first surface layer 110 may be 10 nm to 30 nm. For example, the thickness T2 of the first surface layer 110 may be 10 nm to 20 nm.

If the thickness T2 of the first surface layer 110 is less than 10 nm, the uniformity of the through holes may be reduced as the effect of lowering the etching rate on the first surface 101 is reduced.

For example, when the thickness (T2) of the first surface layer 110 is less than 10 nm, since the through hole having a large thickness and / or width variation is formed, the pattern formed by the metal plate having the through hole It may not be uniform, and the manufacturing efficiency of the display device may be lowered.

If the thickness T2 of the first surface layer 110 is less than 10 nm, the effect of lowering the etching rate on the first surface 101 may be reduced, and it may be difficult to form the through hole having a minute size .

When the thickness T2 of the first surface layer 110 is less than 10 nm, as the surface roughness of the inner surface of the first face hole V1 increases, And the process efficiency may be lowered.

On the other hand, when the thickness T2 of the first surface layer 110 is more than 30 nm, the manufacturing efficiency may be lowered.

The thickness T3 of the second surface layer 120 may be 10 nm to 30 nm. For example, the thickness T3 of the second surface layer 120 may be 10 nm to 20 nm. If the thickness T3 of the second surface layer 120 is less than 10 nm, the uniformity of the through holes may be lowered as the etching rate lowering effect on the second surface 102 is reduced. For example, when the thickness T3 of the second surface layer 120 is less than 10 nm, since the through hole having a large variation in the thickness and / or width is formed, the pattern of the pattern formed by the metal plate having the through- It may not be uniform, and the manufacturing efficiency of the display device may be lowered.

In addition, when the thickness T3 of the second surface layer 120 is less than 10 nm, it is difficult to form the through hole having a small size due to the decrease in the etching rate of the second surface 102 .

In addition, when the thickness T3 of the second surface layer 120 is less than 10 nm, the surface roughness of the inner circumferential surface of the second face hole V2 may increase.

On the other hand, if the thickness T3 of the second surface layer 120 is more than 30 nm, the production efficiency may be lowered.

The metal layer 100a may include a metal material. For example, the metal layer 100a may include a nickel alloy. For example, the metal layer 100a may be an alloy of nickel and iron. For example, the metal layer 100a may be Invar containing 36 wt% of nickel and 64 wt% of iron. However, it is needless to say that the metal layer 100a is not limited thereto and may include various metal materials.

The metal layer 100a may have different compositions of the elements included in the first surface layer 110. FIG. In addition, the metal layer 100a may have different compositions of elements included in the second surface layer 120.

For example, the first surface layer 110 and the second surface layer 120 may include an oxygen element.

The content of oxygen in the first surface layer 110 may be higher than the content of oxygen in the metal layer 100a. The content of oxygen in the second surface layer 120 may be higher than the content of oxygen in the metal layer 100a.

The metal plate according to the embodiment may be measured by X-ray photoelectron spectroscopy (XPS) in which the content of oxygen in the first surface layer 110 and the second surface layer 120 is larger than the metal layer 100a Respectively. The content of high oxygen in the first surface layer 110 as measured through the X-ray photoelectron spectroscopy was drastically decreased starting from the first surface 101 of the metal layer 100a. Also, the content of high oxygen in the second surface layer 120, measured through the X-ray photoelectron spectroscopy, dropped sharply starting from the second surface 102 of the metal layer 100a.

The first surface layer 110 and the second surface layer 120 may include at least one of a metal oxide and a metal hydroxide. For example, the first surface layer 110 and the second surface layer 120 may include metal oxides such as iron oxide and nickel oxide. For example, the first surface layer 110 and the second surface layer 120 may include metal hydroxides, nickel hydroxides, and metal oxides. In detail, the first surface layer 110 may include at least one of FeO, NiO, FeOH, and NiOH. In addition, the second surface layer 110 may include at least one of FeO, NiO, FeOH, and NiOH.

The metal plate 100 may have different through-hole widths along the thickness direction of the through-holes. For example, the width W1 of the first face hole V1 may be greater than the width W3 of the connecting portion CA. In detail, the width of the through hole may be reduced toward the connection portion CA from the first surface 101 of the first face hole V1. More specifically, the width of the through hole may gradually decrease from the first surface 101 toward the connecting portion CA as the first face hole V1.

For example, the width W2 of the second face hole V2 may be greater than the width W3 of the connecting portion CA. In detail, the width of the through hole may be reduced from the second surface 102 toward the connection portion CA as the second face hole V2. More specifically, the width of the through hole may gradually decrease from the second surface 102 toward the connecting portion CA as the second face hole V2.

The height H2 of the second face hole V2 may be greater than the height H1 of the first face hole V1.

The third face hole V3 formed on the first face 101 adjacent to the first face hole V1 is adjacent to the second face hole V1 and is formed on the second face 102 The through hole may be formed by communicating with the fourth face hole V4 formed in the first through hole V4 and the connecting portion CA.

The width W5 of the fourth through hole V4 may be larger than the width W4 of the third through hole V3. For example, the width W4 of the third through-hole V3 may be greater than the width W6 of the connecting portion CA. In detail, the width of the third through hole V3 may be reduced from the first surface 101 toward the connection portion CA. In detail, the width of the third through hole V3 may gradually decrease from the first surface 101 toward the connection portion CA.

For example, the width W5 of the fourth face opening V4 may be greater than the width W6 of the connecting portion CA. In detail, the width of the through hole may be reduced toward the connection portion (CA) from the second surface (102) of the fourth surface (V4). More specifically, the width of the through hole may gradually decrease from the second surface 102 toward the connecting portion CA as the fourth surface hole V4.

The height H4 of the fourth face hole V4 may be greater than the height H3 of the third face hole V3.

The etch rate of the first surface layer 110 may be slower than the etch rate of the metal layer 100a. The etch rate of the second surface layer 120 may be slower than the etch rate of the metal layer 100a.

The deposition mask made of only the metal layer 100a is formed on the first surface 101 and the second surface 102 as the etching speed of the first surface 101 and the second surface 102 of the metal layer 100a, The width of the through-hole formed in the second surface 102 can be increased. As a result, it is difficult to form a through-hole having a fine pattern, and the yield of production may be lowered. In addition, uniformity of the plurality of through holes may be reduced. Therefore, the OLED panel manufactured through the method may have a low deposition efficiency of the pattern, and the uniformity of the deposition of the pattern may be reduced.

The first surface layer 110 and the second surface layer 120 may include an oxygen element and may be slower than the etching rate of the metal layer 100a. In addition, in the embodiment, the first surface layer 110 and the second surface layer 120 are arranged to have a thickness of 10 nm to 30 nm, respectively, on the metal layer 110a, thereby forming a fine through-hole.

For example, when the first surface layer 110 and the second surface layer 120 are respectively arranged at a thickness of 10 nm to 30 nm, the metal plate according to the embodiment has a width W1 And the width W4 of the third through hole V3 correspond to the width W2 of the second through hole V2 and the width W5 of the fourth through hole V4 . For example, in the metal plate according to the embodiment, when the first surface layer 110 and the second surface layer 120 are respectively arranged at a thickness of 10 nm to 30 nm, the height H1 of the first face hole V1 And the height H3 of the third face hole V3 correspond to the height H2 of the second face hole V2 and the height H4 of the fourth face hole V4. That is, the uniformity of the width and height of the plurality of through holes can be improved.

That is, the metal plate according to the embodiment may have a slow etch rate in a region where the first surface layer 110 and the second surface layer 120 are disposed, so that the width of the hole may be small and the thickness may be deep . This makes it possible to prevent the phenomenon of the removal of the photoresist layer from being caused by the rapid etching on the metal surface.

In addition, the metal plate used in the manufacturing of the vapor deposition mask according to the embodiment can control the etching speed at the surface, the yield of manufacturing the through-hole having a fine pattern can be improved, and the uniformity of the plurality of through holes can be improved . Accordingly, the OLED panel manufactured using such a deposition mask has excellent deposition efficiency of the pattern and can improve the deposition uniformity. Further, since the surface layer according to the embodiment includes at least one of metal oxide and metal hydrate , The adhesion of the photoresist layer can be improved, and the photoresist layer can be prevented from being separated or separated in the etching process. In detail, the adhesion of the ceramic layer to the photoresist layer may be greater than the adhesion between the metal layer and the photoresist layer. Accordingly, the metal plate according to the embodiment can improve the production yield and process efficiency of a plurality of through holes.

The metal plate used for manufacturing the vapor deposition mask according to the embodiment may include an outer layer defined by a thickness of 1 탆 or less from the surface of the metal plate and an inner layer other than the outer layer. In detail, the metal plate may include an outer layer disposed on a surface of the metal plate, that is, a region corresponding to a thickness of 1 탆 or less from the outer exposed surface, and an inner layer excluding an outer layer of the metal plate.

The inner and outer layers of the metal plate used in the fabrication of the deposition mask according to the embodiments may have different etch rates.

For example, the etch rate of the outer layer may be less than 0.03 um / sec. For example, the etch rate of the outer layer may be 0.01 to 0.03 um / sec or less. For example, the etch rate of the outer layer may be 0.02 to 0.03 um / sec or less.

For example, the etch rate of the inner layer may be 0.03 to 0.06 um / sec. For example, the etch rate of the inner layer may be between 0.03 and 0.05 um / sec.

That is, the metal plate used for fabricating the evaporation mask according to the embodiment may have a lower etching rate than the inner layer, so that the etching property of the through hole may be excellent. In addition, the OLED panel fabricated using the mask for vapor deposition according to the embodiment has an excellent pattern deposition efficiency and can improve the deposition uniformity.

The metal plate used for manufacturing the vapor deposition mask according to the embodiment may have an etching factor of 2.0 or more.

Accordingly, the metal plate according to the embodiment can have excellent etching properties of the through-holes, and can prevent a decrease in the production yield due to lifting or separation of the photoresist layer.

For example, the etch factor can be calculated by the following equation (1).

<Formula 1>

Where B is the width of the through hole after being etched, A is the width of the photoresist layer, and C is the depth of the through hole.

The larger the etching factor, the better the etching property in the thickness direction of the metal layer, that is, the depth direction of the through hole.

The smaller the etch factor, the larger the width of the through-hole. That is, as the etch factor becomes smaller, the width of the through-hole increases, so that the photoresist layer may be lifted or separated.

The width of the through-hole may be 20 占 퐉 or more. For example, the width of the through-hole may be 20 占 퐉 to 40 占 퐉. For example, at least one of the width W1 of the first face hole and the width W2 of the second face hole may have a width of 20 mu m or more. For example, at least one of the width W 1 of the first face hole and the width W 2 of the second face hole may have a width of 20 μm to 40 μm.

When the width of the through hole is less than 20 mu m, the effect of reducing the etching rate by the surface layer before and after the heat treatment may be small.

6 to 10, a manufacturing process of the metal plate according to the embodiment will be described.

Referring to FIG. 6, the metal layer 100a may have a thickness T1 of 50 m or less. For example, the metal layer 100a may have a thickness T1 of 30 mu m or less. Here, the thickness of the metal layer 100a may be a thickness measured after the rolling process.

Referring to FIG. 7, a surface layer may be formed on the metal layer 100a. For example, as the metal layer 100a is heat-treated, a surface layer may be formed on the metal layer 100a. The first surface layer 110 is formed on the first surface 101 of the metal layer 100a and the second surface 110a of the metal layer 100a is formed by heat treatment in the oxygen atmosphere. 102 may be formed on the second surface layer 120. For example, the first surface layer 110 and the second surface layer 120 can be simultaneously formed by the heat treatment process, thereby improving the process efficiency. The first surface layer 110 and the second surface layer 120 may be disposed on the metal layer 100a with a thickness corresponding to the first surface 101 and the second surface layer 120 of the metal layer 100a, The etching speed of the surface 102 can be lowered. However, the embodiment is not limited thereto, and it is needless to say that the surface layer may be formed by anodizing, plasma processing, or the like.

Referring to FIG. 8, a first photoresist layer P1 may be disposed on the first surface layer 110, and a second photoresist layer P2 may be disposed on the second surface layer 120. Referring to FIG.

A photoresist material is coated on the first surface layer 110 and the second surface layer 120 in detail and the first photoresist layer P1 and the second photoresist layer 120 are exposed and developed, (P2), respectively.

The first photoresist layer P1 and the second photoresist layer P2 are arranged so that the widths of the open regions are different from each other and the first face holes V1 formed on the first face 101 The width of the second face hole (V2) formed on the second face (102) may be different.

9, the first face hole V1 and the second face hole V2 are formed by an etching process, and the first face hole V1 and the second face hole V2 The through holes may be formed.

For example, the etching process may be performed by a wet etching process. Accordingly, the first surface 101 and the second surface 102 can be simultaneously etched. For example, the wet etch process may be conducted at about 45 &lt; 0 &gt; C using an etchant containing iron chloride. At this time, the etchant may contain 35 to 45 wt% of FeCl ₃ . In detail, the etching solution may contain 36 wt% of FeCl ₃ . For example, the specific gravity of the etchant containing 43 wt% FeCl ₃ may be 1.47 at 20 ° C. The specific gravity of the etchant containing 41% by weight of FeCl ₃ may be 1.44 at 20 ° C. The specific gravity of the etchant containing 38 wt% of FeCl ₃ may be 1.39 at 20 ° C.

10, a first surface layer 110 and a second surface layer 120 (not shown) are formed on the metal layer 100a by removing the first photoresist layer P1 and the second photoresist layer P2, ), And a metal plate having a plurality of through holes can be formed.

Hereinafter, the present invention will be described in more detail with reference to examples and comparative examples. These embodiments are merely illustrative of the present invention in order to explain the present invention in more detail. Therefore, the present invention is not limited to these embodiments.

EXPERIMENTAL EXAMPLE 1: Evaluation of uniformity and roughness of through-hole [

Example  One

After forming a 20 nm beam surface on the invar metal layer, a through hole was formed through an etching process.

At this time, the etching process was carried out at 45 ° C. in the wet etching process, and the etching solution contained 36 wt% of FeCl ₃ .

Comparative Example  One

After forming a surface layer of 5 nm on the invar metal layer, a through hole was formed through an etching process.

At this time, the etching process was performed under the same conditions as in Example 1 above.

Figs. 11 and 12 are photographs of through holes formed according to Example 1 and Comparative Example 1. Fig.

Referring to FIG. 11, it can be seen that the through-holes formed according to the first embodiment have a low surface roughness of the through-holes. That is, the inner circumferential surface of the through hole may be a smooth curved line, and the uniformity of the pattern shape deposited through the through hole may be improved.

On the other hand, referring to FIG. 12, it can be seen that the through hole formed according to Comparative Example 1 has a large surface roughness of the through hole. That is, the inner circumferential surface of the through hole may include a wicked shape, so that the uniformity of the pattern shape deposited through the through hole may be reduced.

According to Example 1 and Comparative Example 1, it was confirmed that the uniformity of through holes was improved when the thickness of the surface layer was 10 nm or more.

&Lt; Experimental Example 2: Evaluation of etch factor and etch rate >

Example 2 Example 3 Comparative Example 2 Etch factor 2.12 2.00 1.34 The internal etch rate
(탆 / sec) 0.05 0.05 0.05 Surface etch rate
(탆 / sec) 0.02 0.03 0.1

Table 1 shows etch rates and etching rates according to Example 2, Example 3, and Comparative Example 2.

In Table 1, the etch rate of the surface is the etch rate observed at a thickness of 1 탆 or less from the surface of the metal plate. That is, the etch rate of the surface is the etch rate of the outer layer.

In Table 1, the internal etching rate is an etching rate observed from a thickness of 1 탆 to a thickness of 10 탆 from the surface of the metal plate. That is, the etch rate of the surface is the etch rate of the inner layer.

Referring to Table 1 and FIG. 16, it can be seen that the etch rate of the surface of Comparative Example 2 is faster than the etch rate of the inside. In detail, in Comparative Example 2, the etching rate of the outer layer is faster than the etching rate of the inner layer. That is, in Comparative Example 2, the etching rate at the surface having a large contact area of the etching solution is faster than the etching rate inside.

On the other hand, in Examples 2 and 3, it can be seen that the internal etching rate is faster than the surface etching rate. In detail, in Examples 2 and 3, it can be seen that the etching rate of the inner layer is faster than the etching rate of the outer layer. That is, in Example 2 and Example 3, as the surface layer containing oxygen element is disposed on the metal layer, the etching rate at the surface of the metal plate may be slower than the etching rate at the inside of the metal plate. Accordingly, the metal plate according to the embodiment can form a fine through-hole.

FIG. 13 is a cross-sectional view of a through hole according to the second embodiment, and FIG. 14 is a view of a through hole according to the third embodiment.

Referring to FIGS. 13 and 14, it can be seen that the second and third embodiments have a high etch factor of 2.0 or more, so that the width of the through-hole is small and the etching property is excellent in the depth direction. Thus, deformation of the photoresist layer can be prevented. In addition, the pattern that can be formed through the metal plate according to the embodiment 2 and the embodiment 3 may be able to realize a fine pattern.

Referring to FIG. 15, it can be seen that the penetration holes according to the comparative example 2 overlap with the through holes, thereby causing a phenomenon of desorption of the photoresist layer. Thus, it can be seen that when the etching factor is less than 2.0, the production yield of the through-hole and the process efficiency are lowered.

An evaporation mask according to an embodiment is characterized in that the metal plate comprises a metal layer including a first surface and a second surface opposed to each other, a first surface layer disposed on the first surface, and a second surface layer disposed on the second surface, Wherein the metal plate includes a plurality of through holes, wherein the first surface layer and the second surface layer are opened in a region where the through hole is disposed, and the thickness of the first surface layer and the second surface layer And the thickness of the metal plate is 50um or less, and the etch factor of the through-hole may be 2.0 or more.

The mask for vapor deposition according to the embodiment can arrange the surface layer on the metal layer before forming the through hole. Thus, the surface layer can be opened without being disposed on the region where the through-hole is disposed.

The inner region of the through hole may have a different composition of elements included in the surface layer. For example, the content of oxygen in the first surface layer may be higher than the content of oxygen contained in the connection portion of the through hole. For example, the content of oxygen in the second surface layer may be higher than the content of oxygen contained in the connection portion of the through hole.

That is, in the etching mask according to the embodiment, the etching rate can be gradually increased from the outer layer toward the inner layer in the etching process for forming the through hole, so that the etching efficiency is improved, Uniformity can be improved.

In addition, the OLED panel fabricated using the mask for vapor deposition according to the embodiment has an excellent pattern deposition efficiency and can improve the deposition uniformity.

The features, structures, effects and the like described in the foregoing embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified in other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be construed as limiting the scope of the present invention. It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments may be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

Claims (13)

In the metal plate used for making the vapor deposition mask,
A metal layer;
A first surface layer disposed on a first surface of the metal layer; And
And a second surface layer disposed on a second surface opposite to the first surface of the metal layer,
Wherein a thickness of the metal layer is larger than a thickness of the first surface layer and the second surface layer,
The thickness of the first surface layer is 10 nm to 30 nm,
And the second surface layer has a thickness of 10 nm to 30 nm. The method according to claim 1,
Wherein the thickness of the metal plate is 10 占 퐉 to 50 占 퐉. The method according to claim 1,
Wherein the metal layer comprises a nickel alloy. The method according to claim 1,
Wherein the first surface layer and the second surface layer comprise oxygen elements. The method according to claim 1,
The content of oxygen in the first surface layer is higher than the content of oxygen in the metal layer,
Wherein the content of oxygen in the second surface layer is higher than the content of oxygen in the metal layer. The method according to claim 1,
Wherein the first surface layer and the second surface layer comprise at least one of a metal oxide and a metal hydroxide. In the metal plate used for making the vapor deposition mask,
A metal layer;
A first surface layer disposed on a first surface of the metal layer; And
And a second surface layer disposed on a second surface opposite to the first surface of the metal layer,
Wherein the etch rate of the first surface layer is slower than the etch rate of the metal layer,
Wherein the etching rate of the second surface layer is slower than the etching rate of the metal layer. 8. The method of claim 7,
Wherein the metal plate comprises an outer layer defined in a thickness range of 1 占 퐉 or less from the surface of the metal plate; And an inner layer other than the outer layer,
The etch rate of the outer layer is less than 0.03 um / sec,
Wherein the inner layer has an etch rate in the range of 0.03 to 0.05 um / sec. 8. The method of claim 7,
Wherein the etch factor calculated by the following formula (1) is 2.0 or more.
<Formula 1>

Where B is the width of the etched through hole,
A is the width of the photoresist layer,
And C represents the depth of the through hole. 8. The method of claim 7,
The thickness of the first surface layer is 10 nm to 30 nm,
The thickness of the second surface layer is 10 nm to 30 nm,
Wherein the thickness of the metal plate is 10 占 퐉 to 50 占 퐉. 8. The method of claim 7,
Wherein the metal plate includes a through hole,
And the width of the through hole is 20 占 퐉 or more. In the metal plate,
A metal layer including a first surface and a second surface facing each other;
A first surface layer disposed on the first surface; And
And a second surface layer disposed on the second surface,
Wherein the metal plate includes a plurality of through holes,
Wherein the first surface layer and the second surface layer are opened in a region where the through hole is arranged,
Wherein the first surface layer and the second surface layer each have a thickness of 10 to 30 nm,
Wherein the thickness of the metal plate is 50um or less,
Wherein the etch factor of the through-holes calculated by the following formula (1) is 2.0 or more.
<Formula 1>

Where B is the width of the etched through hole,
A is the width of the photoresist layer,
And C represents the depth of the through hole. An OLED panel fabricated with the mask for vapor deposition according to claim 12.

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