KR20200037173A - A deposition mask of metal material for oled pixel deposition and oled display panel fabrication method - Google Patents

Abstract

The present invention provides a mask for deposition of a metal material for OLED pixel deposition which can uniformly deposit an OLED pixel pattern. According to embodiments of the present invention, the mask for deposition of the metal material for OLED pixel deposition comprises a deposition part and a non-deposition part. The deposition part includes: a plurality of effective parts separated and arranged in a longitudinal direction; and a non-effective part excluding the effective parts. The effective parts include: a plurality of small surface holes formed on one surface of the metal material; a plurality of large surface holes formed on the other surface opposite to the one surface of the metal material; a plurality of through holes connecting the small surface holes and the large surface holes respectively; and an island part formed on the other surface of the metal material, and positioned between the through holes. The large surface holes include a first cross-section inclination angle in a first direction and a second cross-section inclination angle in a second direction crossing the first direction with respect to the one surface. The first cross-section inclination angle and the second cross-section inclination angle are 35-55°, and the first cross-section inclination angle is smaller than the second cross-section inclination angle.

Description

Metallic deposition mask and OLED panel manufacturing method for OLED pixel deposition {A DEPOSITION MASK OF METAL MATERIAL FOR OLED PIXEL DEPOSITION AND OLED DISPLAY PANEL FABRICATION METHOD}

This embodiment relates to a method for manufacturing a mask and an OLED panel made of a metal material for depositing an OLED pixel that can improve the deposition performance while securing rigidity and preventing length deformation.

2. Description of the Related Art Display devices are applied to various devices. For example, the display device is applied to a large device such as a TV, a monitor, a public display (PD), as well as a small device such as a smart phone or a tablet PC. In particular, in recent years, the demand for ultra-high definition UHD (UHD) of 500 PPI (Pixel Per Inch) or higher has increased, and high-resolution display devices have been applied to small devices and large devices. Accordingly, interest in technologies for realizing low power and high resolution is increasing.

2. Description of the Related Art Display devices that are generally used may be largely classified into a liquid crystal display (LCD) and an organic light emitting diode (OLED).

The LCD is a display device driven using a liquid crystal, and has a structure in which a light source including a Cold Cathode Fluorescent Lamp (CCFL) or Light Emitting Diode (LED) is disposed under the liquid crystal, and on the light source. It is a display device that is driven by controlling the amount of light emitted from the light source by using the disposed liquid crystal.

In addition, the OLED is a display device driven by using an organic material, and a separate light source is not required, and the organic material itself may serve as a light source and be driven with low power. In addition, OLEDs are drawing attention as display devices that can replace LCDs because they can express an infinite contrast ratio, have a response speed that is about 1000 times faster than LCDs, and have excellent viewing angles.

In particular, in the OLED, the organic material included in the light emitting layer may be deposited on a substrate by a deposition mask called a fine metal mask (FMM), and the deposited organic material corresponds to a pattern formed in the deposition mask. It is formed in a pattern that can serve as a pixel. The deposition mask is generally made of an Invar alloy metal plate containing iron (Fe) and nickel (Ni). In this case, through holes penetrating the one surface and the other surface are formed on one surface and the other surface of the metal plate, and the through holes may be formed at positions corresponding to the pixel patterns. Accordingly, organic materials such as red, green, and blue may be deposited on the substrate through the through hole of the metal plate, and a pixel pattern may be formed on the substrate.

At this time, when the inclination angle of the face hole in the through hole formed in the deposition mask is smaller than a predetermined range, the thickness of the rib connecting the through holes becomes thin. Accordingly, the stiffness of the deposition mask is deteriorated, resulting in length deformation of the deposition mask, such as tensile deformation, total pitch deformation, and sagging. In addition, the uniformity of the shape of the mask pattern and the position of the through hole may be reduced according to the length deformation, and there is a problem in that the diameter of the through hole is not uniform, so that the efficiency of pattern deposition may be lowered and deposition defects may occur.

In addition, when the inclination angle of the face hole in the through hole formed in the deposition mask is larger than a predetermined range, there is a problem that some of the organic material does not pass through the through hole when depositing the organic material on the substrate. In detail, in a region that does not overlap with the organic material deposition container, or a through hole positioned in a direction perpendicular to the movement direction of the organic material deposition container, the distance of the organic material is longer, and accordingly, some of the organic material may pass through the through hole. There is a problem that it does not pass and is deposited on the inner surface of the island portion formed between adjacent through holes or the large hole of the through hole.

In particular, a high-resolution or ultra-high resolution (UHD-class) pattern of 500 PPI or more can be uniformly formed without deposition defects, and a deposition mask having a new structure capable of preventing various length deformations and a method of manufacturing the same are required.

The embodiment is intended to provide a deposition mask capable of minimizing length deformation, such as total pitch deformation during tension or sagging, by securing stiffness.

In addition, the embodiment is to provide a deposition mask capable of uniformly depositing the OLED ash pattern regardless of the position of the through hole while securing rigidity.

The technical problems to be achieved in the proposed embodiment are not limited to the technical problems mentioned above, and other technical problems that are not mentioned are clear to a person having ordinary knowledge in the technical field to which the proposed embodiment belongs from the following description. It can be understood.

In the metal deposition mask for OLED pixel deposition according to an embodiment, the deposition mask includes a deposition unit and a non-deposition unit, the deposition unit is a plurality of effective portions and the effective portion other than the spaced apart in the longitudinal direction It includes a non-effective portion, the effective portion is a plurality of small surface holes formed on one surface of the metal material; A plurality of face holes formed on the other surface opposite to the one surface of the metal material; A plurality of through holes communicating with the small face hole and the large face hole, respectively; And an island portion formed on the other surface of the metal material and positioned between the plurality of through-holes, wherein the large-faced hole, with respect to the one surface, a first cross-section inclination angle in the first direction and the first direction The second cross-section inclination angle includes an intersecting second direction, the first cross-section inclination angle and the second cross-section inclination angle are within 35 ° to 55 °, and the first cross-section inclination angle is smaller than the second cross-section inclination angle.

In addition, the effective portion includes a rib having a lower height than the island portion, and the rib includes: a first rib positioned between through holes adjacent in the first direction among the plurality of through holes; And a second rib located between the through holes adjacent in the second direction among the plurality of through holes, and the height of the first rib is smaller than the height of the second rib.

Further, the distance to the first rib based on the center of the through hole is greater than the distance to the second rib based on the center of the through hole.

In addition, the small surface hole includes a first height in a first cross section in the first direction and a second height in a second cross section in the second direction, wherein the first height is greater than the second height. small.

Further, the second height is 3.5 μm to 4.0 μm, and the first height is 2.5 μm to 3.0 μm.

In addition, the first cross-sectional inclination angle is 35 ° to 45 °, and the second cross-section inclination angle is 45 ° to 55 °.

In addition, the effective portion includes a central region in which the through-hole is disposed, and an outer region disposed in the outer periphery of the central region, wherein the outer region, with respect to the one surface, the first cross-sectional inclination angle in the first direction , A through hole including a second cross-sectional tilt angle in the second direction and a third cross-sectional tilt angle in the first direction, wherein the third cross-sectional tilt angle is greater than the first cross-sectional tilt angle.

In addition, the first cross-sectional inclination angle of the through hole in the outer region is the cross-sectional inclination angle in the first direction toward the central region, and the third cross-sectional inclination angle in the through hole in the outer region is opposite to the direction toward the central region It is a cross-sectional inclination angle in the first direction toward the non-effective portion in the direction.

In addition, the width of the island portion in the first direction is greater than the width of the second direction.

In addition, the through hole has a resolution of 500 PPI or more with a diameter of 33 µm or less and a spacing between the through holes of 48 µm or less.

Further, the first direction is a tensile direction.

Further, the second direction is a vertical direction in the longitudinal direction.

Further, the first direction is the same direction as the longitudinal direction.

According to an embodiment, the face hole of the through-hole has a first cross-section inclination angle in the longitudinal direction, a second cross-section inclination angle greater than the first cross-section inclination angle in the width direction, and the first cross-section inclination angle and the first 2 It is possible to increase the thickness of the ribs arranged in the longitudinal direction by the difference in the inclination angle of the cross-section, thereby securing the rigidity of the deposition mask. In addition, as the rigidity of the deposition mask is secured, length deformation can be minimized, and accordingly, the pattern deposition efficiency can be improved by increasing the uniformity of the shape of the mask pattern and the position of the through hole.

In addition, according to the embodiment, the inclination angle of the large hole of the through hole in the direction perpendicular to the direction of movement of the organic material deposition container is reduced to uniformly deposit the OLED pixel pattern in all regions regardless of the position of the through hole.

1 is a perspective view showing an organic material deposition apparatus including a deposition mask according to an embodiment.
2 is a cross-sectional view showing an organic material deposition apparatus including a deposition mask 100 according to an embodiment.
3 is a view showing that the deposition mask 100 according to an embodiment is tensioned to be mounted on the mask frame 200.
4 is a diagram illustrating that a plurality of deposition patterns are formed on the substrate 300 through a plurality of through holes of the deposition mask 100.
5 is a view showing a top view of a deposition mask 100 according to an embodiment.
6 is a view showing a plan view of an effective portion of the deposition mask 100 according to the first embodiment.
7 is a view showing another plan view of the deposition mask according to the embodiment.
8 is a view showing another plan view of a deposition mask according to an embodiment.
FIG. 9 is a view showing each section overlapped in order to explain the height difference and size between the section in AA 'and the section in BB' in FIG. 6.
It is a figure which showed sectional drawing in the BB 'direction of FIG.
It is a figure which showed sectional drawing in CC 'direction of FIG.
12 is a view showing a cross-sectional view in the direction DD 'of FIG. 6.
13 is a plan view showing an effective portion of the deposition mask 100 according to the second embodiment.
14 is a cross-sectional view showing a second through hole in FIG. 13, and FIG. 15 is a cross-sectional view showing a third through hole in FIG. 13.
16 is a view showing a method of manufacturing a deposition mask 100 according to an embodiment.
17 and 18 are diagrams illustrating deposition patterns formed through a deposition mask according to an embodiment.

Hereinafter, the configuration and operation according to the present invention will be described in detail with reference to the accompanying drawings. In the description with reference to the accompanying drawings, the same components are given the same reference numerals regardless of the reference numerals, and duplicate description thereof will be omitted. Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from other components.

In addition, in the description of the embodiments, each layer (film), region, pattern, or structure is a substrate, each layer (film), region, pad, or "on / top" or "down / down" of pads or patterns under) ”includes everything formed directly or through another layer. Standards for the top / bottom / bottom / bottom of each layer are described based on the drawings.

In addition, when a part is said to be "connected" to another part, this includes not only "directly connected" but also "indirectly connected" with another member in between. Also, when a part is said to “include” a certain component, this means that other components may be further provided instead of excluding the other component unless otherwise stated.

Hereinafter, a deposition mask according to an embodiment will be described with reference to the drawings.

1 to 4 are conceptual views for explaining a process of depositing an organic material on the substrate 300 using the deposition mask 100 according to the embodiment.

1 is a perspective view showing an organic material deposition apparatus including a deposition mask according to an embodiment, FIG. 2 is a cross-sectional view showing an organic material deposition apparatus including a deposition mask 100 according to an embodiment, and FIG. 3 is an embodiment It is a figure showing that the deposition mask 100 according to an example is stretched to be mounted on the mask frame 200. In addition, FIG. 4 is a diagram illustrating that a plurality of deposition patterns are formed on the substrate 300 through a plurality of through holes of the deposition mask 100.

Referring to FIGS. 1 to 4, the organic material deposition apparatus may include a deposition mask 100, a mask frame 200, a substrate 300, an organic material deposition container 400, and a vacuum chamber 500.

The deposition mask 100 may include metal. For example, the deposition mask may include iron (Fe) and nickel (Ni).

The deposition mask 100 may include a plurality of through holes TH in an effective portion for deposition. The deposition mask 100 may be a substrate for a deposition mask including a plurality of through holes TH. At this time, the through hole may be formed to correspond to a pattern to be formed on the substrate. The deposition mask 100 may include a non-effective portion other than the effective portion including the deposition region.

The mask frame 200 may include an opening 205. The plurality of through holes of the deposition mask 100 may be disposed on an area corresponding to the opening 205 of the mask frame 200. Accordingly, an organic material supplied to the organic material deposition container 400 may be deposited on the substrate 300. The deposition mask 100 may be disposed and fixed on the mask frame 200. For example, the deposition mask 100 is tensioned with a constant tensile force, and may be fixed by welding on the mask frame 200.

That is, the mask frame 200 includes a plurality of frames 201, 202, 203, and 204 surrounding the opening 205. The plurality of frames 20, 202, 203, and 204 may be connected to each other. The mask frame 200 faces each other in the X direction, and includes a first frame 201 and a second frame 202 extending along the Y direction, facing each other in the Y direction, and extending along the X direction. It includes a third frame 203 and a fourth frame (204). The first frame 201, the second frame 202, the third frame 203, and the fourth frame 204 may be square frames connected to each other. The mask frame 200 may be made of a material having a small deformation when the mask 130 is welded, such as a metal having high rigidity.

The deposition mask 100 may be stretched in opposite directions from an edge disposed at the outermost edge of the deposition mask 100. In the longitudinal direction of the deposition mask 100, the deposition mask 100 may be pulled in a direction opposite to one end of the deposition mask 100 and the other end opposite to the one end. Therefore, the tensile direction of the deposition mask 100, the X-axis direction, and the longitudinal direction of the deposition mask may all be the same direction.

 One end and the other end of the deposition mask 100 may be disposed parallel to each other. One end of the deposition mask 100 may be any one of four end surfaces forming the outermost sides of the deposition mask 100. For example, the deposition mask 100 may be tensioned with a tensile force of about 0.1 kgf to about 2 kgf. In detail, the deposition mask may be tensioned with a tensile force of 0.4 kgf to about 1.5 kgf to be fixed on the mask frame 200. Accordingly, the stress of the deposition mask 100 may be reduced. However, the embodiment is not limited thereto, and may be tensioned with various tensile forces capable of reducing the stress of the deposition mask 100 and fixed on the mask frame 200.

Subsequently, the deposition mask 100 may fix the deposition mask 100 to the mask frame 200 by welding an ineffective portion of the deposition mask 100. Next, a portion of the deposition mask 100 disposed outside the mask frame 200 may be removed by a method such as cutting.

The substrate 300 may be a substrate used for manufacturing a display device. For example, the substrate 300 may be a substrate 300 for depositing an organic material for an OLED pixel pattern. Red, green, and blue organic patterns may be formed on the substrate 300 to form a pixel having three primary colors of light. That is, an RGB pattern may be formed on the substrate 300.

The organic material deposition container 400 may be a crucible. An organic material may be disposed inside the crucible. The organic material deposition container 400 may move within the vacuum chamber 500. That is, the organic material deposition container 400 may move in the Y-axis direction in the vacuum chamber 500. That is, the organic material deposition container 400 may move in the width direction of the deposition mask 100 in the vacuum chamber 500. That is, the organic material deposition container 400 may move in a direction perpendicular to the tensile direction of the deposition mask 100 in the vacuum chamber 500.

As the heat source and / or current is supplied to the crucible of the organic material deposition container 400 in the vacuum chamber 500, the organic material may be deposited on the substrate 100.

Referring to FIG. 4, the deposition mask 100 may include one surface 101 and the other surface 102 opposite to the one surface.

The one surface 101 of the deposition mask 100 may include a small surface hole V1, and the other surface may include a large surface hole V2. For example, each of the one surface 101 and the other surface 102 of the deposition mask 100 may include a plurality of small face holes V1 and a plurality of face holes V2.

In addition, the deposition mask 100 may include a through hole TH. The through hole TH may be communicated by a communication portion CA to which the boundary between the small face hole V1 and the large face hole V2 is connected.

In addition, the deposition mask 100 may include a first etched surface ES1 in the small surface hole V1. The deposition mask 100 may include a second etching surface ES2 and a third etching surface ES3 in the large hole V2. The through hole TH may be formed by a first etching surface ES1 in the small surface hole V1 and a second etching surface ES2 and a third etching surface ES3 in the large surface hole V2 communicating with each other. You can. For example, the first etching surface ES1 in one small surface hole V1 communicates with the second etching surface ES2 and the third etching surface ES3 in one large surface hole V2, and has one through hole. Can form. Accordingly, the number of through holes TH may correspond to the number of small face holes V1 and the large face holes V2.

Meanwhile, the second etched surface ES2 in the face hole V2 may include a plurality of sub-second etched surfaces ES2. That is, the second etched surface ES2 in the face hole V2 may include a pair of first sub-second etched surfaces and second sub-second etched surfaces facing in the longitudinal direction. In addition, the third etching surface ES3 of the large surface hole V2 may include a pair of first sub third etching surfaces and second sub third etching surfaces facing in the width direction.

The width of the large face hole V2 may be greater than the width of the small face hole V1. At this time, the width of the small hole V1 is measured on one surface 101 of the deposition mask 100, and the width of the large surface hole V2 is measured on the other surface 102 of the deposition mask 100. Can be.

The small hole V1 may be disposed toward the substrate 300. The small hole V1 may be disposed close to the substrate 300. Accordingly, the small hole V1 may have a shape corresponding to a deposition material, that is, a deposition pattern DP.

The large hole V2 may be disposed toward the organic material deposition container 400. Accordingly, the large-surface hole V2 can accommodate the organic material supplied from the organic material deposition container 400 in a wide width, and the small-surface hole V1 is smaller in width than the large-surface hole V2. A fine pattern can be quickly formed on the substrate 300.

5 is a view showing a top view of a deposition mask 100 according to an embodiment. Referring to FIG. 5, the deposition mask 100 will be described in more detail.

Referring to FIG. 5, the deposition mask 100 according to an embodiment may include a deposition area DA and a non-deposition area NDA.

The deposition area DA may be an area for forming a deposition pattern. The deposition area DA may include a pattern area and a non-pattern area. The pattern area may be an area including a small face hole V1, a large face hole V2, a through hole TH, and an island portion IS, and the non-patterned area is a small face hole V1, a large face hole V2 ), A region not including the through hole TH and the island portion IS.

In addition, one deposition mask 100 may include a plurality of deposition regions DA. For example, the deposition area DA of the embodiment may include a plurality of effective portions AA1, AA2, and AA3 capable of forming a plurality of deposition patterns. The pattern area may include the plurality of effective parts AA1, AA2, and AA3.

The plurality of effective parts AA1, AA2, and AA3 may include a first effective part AA1, a second effective part AA2, and a third effective part AA3. Here, one deposition region DA may be any one of the first effective portion AA1, the second effective portion AA2, and the third effective portion AA3.

In the case of a small display device such as a smart phone, any one of the plurality of deposition regions included in the deposition mask 100 may be for forming one display device. Accordingly, one deposition mask 100 may include a plurality of effective portions, and thus multiple display devices may be simultaneously formed. Therefore, the deposition mask 100 according to the embodiment may improve process efficiency.

Alternatively, in the case of a large display device such as a television, a plurality of effective parts included in one deposition mask 100 may be part for forming a single display device. At this time, the plurality of effective parts may be to prevent deformation due to the load of the mask.

The deposition area DA may include a plurality of separation areas IA1 and IA2 included in one deposition mask 100. Separation regions IA1 and IA2 may be disposed between adjacent effective portions. The separation regions IA1 and IA2 may be spaced apart between a plurality of effective portions. For example, a first separation region IA1 may be disposed between the first effective portion AA1 and the second effective portion AA2. In addition, a second separation region IA2 may be disposed between the second effective portion AA2 and the third effective portion AA3. That is, adjacent effective regions may be distinguished from each other by the separation regions IA1 and IA2, and one deposition mask 100 may support a plurality of effective regions.

The deposition mask 100 may include non-deposition regions NDA on both sides in the longitudinal direction of the deposition region DA. The deposition mask 100 according to an embodiment may include the non-deposition region NDA on both sides of the deposition region DA in the horizontal direction.

The non-deposition area NDA of the deposition mask 100 may be an area not involved in deposition. The non-deposition region NDA may include frame fixing regions FA1 and FA2 for fixing the deposition mask 100 to the mask frame 200. Also, the non-deposition region NDA may include half-etched portions HF1 and HF2 and an open portion.

As described above, the deposition area DA may be an area for forming a deposition pattern, and the non-deposition area NDA may be an area not involved in deposition. At this time, a surface treatment layer different from the material of the metal plate 10 may be formed in the deposition region DA of the deposition mask 100, and the non-deposition region NDA surface treatment layer may not be formed. . Alternatively, a surface treatment layer different from the material of the metal plate 10 may be formed on only one of the one surface 101 or the other surface 102 of the deposition mask 100. Alternatively, a surface treatment layer different from the material of the metal plate 10 may be formed only on a part of one surface 101 of the deposition mask 100. For example, one surface 101 and / or the other surface 102 of the deposition mask 100, and all and / or a part of the deposition mask 100 have a slow surface treatment layer than the metal plate 10 material. It may include, it is possible to improve the etching factor. Accordingly, the deposition mask 100 of the embodiment can form a through hole of a fine size with high efficiency. In one example, the deposition mask 100 of the embodiment may have a resolution of 400 PPI or more. Specifically, the deposition mask 100 may form a deposition pattern having a high resolution of 500 PPI or higher with high efficiency. Here, the surface treatment layer may include a material different from the material of the metal plate 10, or may mean that the composition of the same element includes a different metal material. In this regard, it will be described in more detail in the manufacturing process of the deposition mask described later.

The non-deposition region NDA may include half-etched portions HF1 and HF2. For example, the non-deposition area NDA of the deposition mask 100 may include a first half-etching part HF1 on one side of the deposition area DA, and the deposition area DA may be formed. A second half-etching portion HF2 may be included on the other side opposite to the one side. The first half-etching part HF1 and the second half-etching part HF2 may be regions in which grooves are formed in a depth direction of the deposition mask 100. The first half-etching portion HF1 and the second half-etching portion HF2 may have grooves about 1/2 of the thickness of the deposition mask, so that stress during dispersion of the deposition mask 100 can be dispersed. have. In addition, the half-etching portions HF1 and HF2 are preferably formed to be symmetrical in the X-axis direction or symmetrical in the Y-axis direction based on the center of the deposition mask 100. Through this, the tensile force in both directions can be uniformly controlled.

The half-etching portions HF1 and HF2 may be formed in various shapes. The half-etched portions HF1 and HF2 may include semi-circular grooves. The groove may be formed on at least one surface of one surface 101 of the deposition mask 100 and the other surface 102 opposite to the one surface 101. Preferably, the half-etching portions HF1 and HF2 may be formed on a surface corresponding to the small face hole V1. Accordingly, the half-etching portions HF1 and HF2 may be formed simultaneously with the small face holes V1, thereby improving process efficiency. In addition, the half-etching portions HF1 and HF2 may disperse stresses that may occur due to a size difference between the large face holes V2. However, the embodiment is not limited thereto, and the half-etching portions HF1 and HF2 may have a rectangular shape. For example, the first half-etching part HF1 and the second half-etching part HF2 may have a rectangular or square shape. Accordingly, the deposition mask 100 can effectively disperse the stress.

Also, the half-etching portions HF1 and HF2 may include curved surfaces and flat surfaces. The plane of the first half-etching portion HF1 may be disposed adjacent to the first effective portion AA1, and the plane may be disposed horizontally with the longitudinal end of the deposition mask 100. The curved surface of the first half-etching portion HF1 may be convex toward one end in the longitudinal direction of the deposition mask 100. For example, the curved surface of the first half-etching portion HF1 may be formed such that a half point of a vertical length of the deposition mask 100 corresponds to a semicircular radius.

In addition, the plane of the second half-etching portion HF2 may be disposed adjacent to the third effective portion AA3, and the plane may be disposed horizontally with the longitudinal end of the deposition mask 100. have. The curved surface of the second half-etching portion HF2 may be convex toward the other end in the longitudinal direction of the deposition mask 100. For example, the curved surface of the second half-etching portion HF2 may be formed such that a half point of the vertical length of the deposition mask 100 corresponds to a semicircular radius.

The half-etching portions HF1 and HF2 may be formed at the same time when forming the small face hole V1 or the large face hole V2. Through this, process efficiency can be improved. In addition, grooves formed on one surface 101 and the other surface 102 of the deposition mask 100 may be formed to be offset from each other. Through this, the half-etching portions HF1 and HF2 may not penetrate.

In addition, the deposition mask 100 according to the embodiment may include four half-etching portions. For example, the half-etching portions HF1 and HF2 may include an even number of half-etching portions HF1 and HF2, so that stress can be more efficiently distributed.

In addition, the half-etching portions HF1 and HF2 may be further formed in the ineffective portion UA of the deposition region DA. For example, a plurality of the half-etching portions HF1 and HF2 may be dispersed in all or part of the ineffective portion UA in order to disperse the stress during elongation of the deposition mask 100.

Further, the half-etching portions HF1 and HF2 may be formed in the frame fixing regions FA1 and FA2 and / or the peripheral regions of the frame fixing regions FA1 and FA2. Accordingly, the deposition mask 100 that occurs when the organic material is deposited after the deposition mask 100 is fixed to the mask frame 200 and / or after the deposition mask 100 is fixed to the mask frame 200. ) Can be uniformly distributed. Accordingly, the deposition mask 100 can be maintained to have a uniform through hole.

That is, the deposition mask 100 according to the embodiment may include a plurality of half-etching portions. In detail, the deposition mask 100 according to an embodiment is illustrated as including half-etching portions HF1 and HF2 only in the non-deposition area NDA, but is not limited thereto, and the deposition area DA and the non-deposition area ( At least one region of NDA) may further include a plurality of half-etching portions. Accordingly, the stress of the deposition mask 100 can be uniformly distributed.

The non-deposition region NDA may include frame fixing regions FA1 and FA2 for fixing the deposition mask 100 to the mask frame 200. For example, a first frame fixing area FA1 may be included on one side of the deposition area DA, and a second frame fixing area FA2 may be provided on the other side opposite to the one side of the deposition area DA. It can contain. The first frame fixing area FA1 and the second frame fixing area FA2 may be areas fixed to the mask frame 200 by welding.

The frame fixing regions FA1 and FA2 are disposed between the half-etching portions HF1 and HF2 of the non-deposition region NDA and the effective portions of the deposition regions DA adjacent to the half-etching portions HF1 and HF2. Can be. For example, the first frame fixing area FA1 includes a first half-etching part HF1 of the non-deposition area NDA and a deposition area DA adjacent to the first half-etching part HF1. It may be disposed between one effective portion (AA1). For example, the second frame fixing area FA2 includes a second half-etching part HF2 of the non-deposition area NDA and a deposition area DA adjacent to the second half-etching part HF2. It may be disposed between the three effective portions (AA3). Accordingly, a plurality of deposition pattern portions can be fixed at the same time.

In addition, the deposition mask 100 may include semi-circular open portions at both ends in the horizontal direction (X). For example, the non-deposition area NDA may include an open portion. In detail, the non-deposition area NDA may include one semi-circular open portion at both ends in the horizontal direction. For example, the non-deposition area NDA of the deposition mask 100 may include an open portion in which the center of the vertical direction Y is open on one side of the horizontal direction. For example, the non-deposition region NDA of the deposition mask 100 may include an open portion in which the center of the vertical direction is opened on the other side opposite to the one side in the horizontal direction. That is, both ends of the deposition mask 100 may include an open portion at a half point of a length in the vertical direction. For example, both ends of the deposition mask 100 may be shaped like a horseshoe.

At this time, the curved surface of the open portion may face the half-etching portions HF1 and HF2. Accordingly, the open portions located at both ends of the deposition mask 100 are vertical lengths of the first half-etching portions HF1, HF2 or the second half-etching portions HF1, HF2 and the deposition mask 100. The separation distance may be the shortest at 1/2 point of.

Further, the vertical length h2 of the open portion may correspond to the vertical length h1 of the first half-etching portion HF1 or the second half-etching portion HF2. Accordingly, when the deposition mask 100 is stretched, stress may be evenly distributed, thereby reducing wave deformation of the deposition mask. Therefore, the deposition mask 100 according to the embodiment may have a uniform through hole, and thus the deposition efficiency of the pattern may be improved. Preferably, the length h1 in the vertical direction of the first half-etching part HF1 or the second half-etching part HF2 is about 80% to about 200% of the length h2 in the vertical direction of the open part. Can be (h1: h2 = 0.8 ~ 2: 1). The vertical length h1 of the first half-etching portion HF1 or the second half-etching portion HF2 may be about 90% to about 150% of the vertical length h2 of the open portion ( h1: h2 = 0.9-1.5: 1). The length h1 in the vertical direction of the first half-etching portion HF1 or the second half-etching portion HF2 may be about 95% to about 110% of the length h2 in the vertical direction of the open portion ( h1: h2 = 0.95 to 1.1: 1).

In addition, although not shown in the drawing, the half-etching portion may be further formed on the non-effective portion UA of the deposition region DA. In order to disperse the stress during the stretching of the deposition mask 100, the half-etching portion may be distributed in a number or part of all or part of the ineffective portion UA.

Also, the half-etching portions HF1 and HF2 may be formed in the frame fixing regions FA1 and FA2 and / or the peripheral regions of the frame fixing regions FA1 and FA2. Accordingly, the stress of the deposition mask 100 generated when the deposition mask 100 is fixed to the mask frame 200 and / or after the deposition mask 100 is fixed to the frame is deposited. It can be dispersed uniformly. Accordingly, the deposition mask 100 can be maintained to have a uniform through hole.

The deposition mask 100 may include a plurality of effective portions spaced apart in the longitudinal direction (AA1, AA2, AA3) and non-effective portions (UA) other than the effective portion. In detail, the deposition area DA may include a plurality of effective portions AA1, AA2, and AA3 and non-effective portions UA other than the effective portion AA.

The effective portion (AA1, AA2, AA3) is a plurality of small surface holes (V1) formed on one surface of the deposition mask 100, a plurality of large surface holes (V2) formed on the other surface opposite to the one surface, the small surface It may include a through hole (TH) formed by the communication portion (CA) is connected to the boundary of the ball (V1) and the face hole (V2).

Further, the effective portions AA1, AA2, and AA3 may include an island portion IS supporting between the plurality of through holes TH.

The island portion IS may be positioned between adjacent through holes TH among the plurality of through holes TH. That is, areas other than the through holes TH in the effective portions AA1, AA2, and AA3 of the deposition mask 100 may be island portions IS.

The island portion IS may mean a portion that is not etched on one surface 101 or the other surface 102 of the effective portion of the deposition mask. In detail, the island portion IS may be an etched region between the through hole TH and the through hole TH on the other side 102 on which the large hole V2 of the effective portion of the deposition mask 100 is formed. have. Therefore, the island portion IS may be disposed parallel to one surface 101 of the deposition mask 100. In detail, the upper surface of the island portion IS may be disposed parallel to the one surface 101.

The island portion IS may be disposed on the same plane as the other surface 102 of the deposition mask 100. Accordingly, the island portion IS may have the same thickness as at least a portion of the non-effective portion on the other surface 102 of the deposition mask 100. In detail, the island portion IS may have the same thickness as the non-etched portion of the ineffective portion on the other surface 102 of the deposition mask 100. Accordingly, the deposition uniformity of the sub-pixels may be improved through the deposition mask 100.

Alternatively, the island portion IS may be disposed in a plane parallel to the other surface 102 of the deposition mask 100. Here, the parallel plane means that the other side of the deposition mask 100 on which the island portion IS is disposed by the etching process around the island portion IS and the non-etched deposition mask 100 among the ineffective portions. It may include that the height difference of the other surface is ± 1 μm or less.

The island portion IS may have a width W1 in the longitudinal direction and a width in the horizontal direction. That is, the island portion IS may have a width W1 in the longitudinal direction greater than a width W2 in the horizontal direction.

The deposition mask 100 may include an ineffective portion (UA) disposed outside the effective portions AA1, AA2, and AA3. The effective portion AA may be an inner region when connecting the outer portions of the through holes located at the outermost portion for depositing the organic material among the plurality of through holes. The ineffective portion UA may be an outer region when connecting the outer portions of the through-holes located on the outermost side for depositing an organic material among the plurality of through-holes.

The non-effective portion UA is an area excluding the effective portions AA1, AA2, and AA3 of the deposition region DA and the non-deposited region NDA. The non-effective portion UA may include outer regions OA1, OA2, and OA3 surrounding the outer portions of the effective portions AA1, AA2, and AA3.

The number of outer regions OA1, OA2, and OA3 may correspond to the number of effective portions AA1, AA2, and AA3. That is, one effective portion may include one outer region separated from each other by a predetermined distance in the horizontal and vertical directions from the ends of the effective portion.

The first effective portion AA1 may be included in the first outer region OA1. The first effective portion AA1 may include a plurality of through holes TH for forming a deposition material. The first outer region OA1 surrounding the outer periphery of the first effective portion AA1 may include a plurality of through holes.

For example, the plurality of through holes included in the first outer region OA1 is for reducing etching defects of the through holes TH located at the outermost portion of the first effective portion AA1. Accordingly, the deposition mask 100 according to the embodiment can improve the uniformity of a plurality of through holes located in the effective portions AA1, AA2, and AA3, and thereby improve the quality of the deposition pattern produced. have.

In addition, the shape of the through hole TH of the first effective portion AA1 may correspond to the shape of the through hole TH of the first outer region OA1. Accordingly, uniformity of the through-hole TH included in the first effective portion AA1 may be improved. For example, the shape of the through hole TH of the first effective portion AA1 and the shape of the through hole of the first outer region OA1 may be circular. However, the embodiment is not limited thereto, and the through hole TH may have various shapes such as a diamond pattern and an oval pattern.

The second effective portion AA2 may be included in the second outer region OA2. The second effective portion AA2 may have a shape corresponding to the first effective portion AA1. The second outer region OA2 may have a shape corresponding to the first outer region OA1.

The second outer region OA2 may further include two through holes in a horizontal direction and a vertical direction, respectively, from the through holes located at the outermost portion of the second effective portion AA2. For example, in the second outer area OA2, two through holes may be arranged in a row in the horizontal direction at positions of upper and lower portions of the through holes located at the outermost portions of the second effective portion AA2. For example, in the second outer area OA2, two through holes may be arranged in a vertical direction in the left and right sides of the through hole located at the outermost portion of the second effective portion AA2. The plurality of through holes included in the second outer region OA2 is for reducing etching defects of the through holes located at the outermost portion of the effective portion. Accordingly, the deposition mask according to the embodiment can improve the uniformity of a plurality of through-holes located in the effective portion, thereby improving the quality of the deposition pattern produced.

The third effective portion AA3 may be included in the third outer region OA3. The third effective portion AA3 may include a plurality of through holes for forming a deposition material. The third outer region OA3 surrounding the outer periphery of the third effective portion AA3 may include a plurality of through holes.

The third effective portion AA3 may have a shape corresponding to the first effective portion AA1. The third outer region OA3 may have a shape corresponding to the first outer region OA1.

Further, the through hole TH included in the effective portions AA1, AA2, and AA3 may have a shape partially corresponding to the through hole included in the non-effective portion UA. Illero, the through-holes included in the effective portions AA1, AA2, and AA3 may include different shapes from the through-holes located at the edge portion of the non-effective portion UA. Accordingly, the difference in stress according to the position of the deposition mask 100 can be adjusted.

6 is a view showing a plan view of an effective portion of the deposition mask 100 according to the first embodiment, FIG. 7 is a view showing another plan view of the deposition mask according to the embodiment, and FIG. 8 is in the embodiment It is a view showing another plan view of the deposition mask according to the invention.

6 to 8 may be a plan view of any one of the first effective portion AA1, the second effective portion AA2 and the third effective portion AA3 of the deposition mask 100 according to the embodiment. . 6 to 8 are for explaining the shape of the through-hole TH and the arrangement between the through-holes TH, the deposition mask 100 according to the embodiment has a through-hole TH shown in the drawing. It is not limited to the number of.

6 to 8, the deposition mask 100 may include a plurality of through holes TH. In this case, the through-holes TH may be arranged in a line or staggered with each other depending on the direction. For example, the through holes TH may be arranged in a line in the vertical axis and the horizontal axis, and may be arranged in a line in the vertical axis or the horizontal axis.

First, referring to FIG. 6, the deposition mask 100 may include a plurality of through holes TH. In this case, the plurality of through holes TH may have a circular shape. In detail, the through-hole TH may have a horizontal diameter Cx and a vertical diameter Cy, and the through-hole TH may have a horizontal diameter Cx and a vertical diameter ( Cy) values may correspond to each other.

The through holes TH may be arranged in a line according to the direction. For example, the through holes TH may be arranged in a line in the vertical axis and the horizontal axis.

In detail, the first through hole TH1 and the second through hole TH2 may be arranged in a line in the horizontal axis, and the third through hole TH1 and the fourth through hole TH4 may be arranged in line in the vertical axis. have.

In addition, the first through hole TH1 and the third through hole TH3 may be arranged in a line in the vertical axis, and the second through hole TH2 and the fourth through hole TH4 may be arranged in line in the horizontal axis. have.

That is, when the through-holes TH are arranged in a line in the vertical axis and the horizontal axis, the island portion IS is positioned between two through-holes TH adjacent in the diagonal direction, which is a direction that intersects both the vertical axis and the horizontal axis. can do. That is, the island portion IS may be positioned between two adjacent through holes TH located diagonally to each other.

For example, the island portion IS may be disposed between the first through hole TH1 and the fourth through hole TH4. Also, an island portion IS may be disposed between the second through hole TH2 and the third through hole TH3. Island portions IS may be located in an inclined angle direction of about +45 degrees around and an inclined angle of about -45 degrees around each of the horizontal axes traversing two adjacent through holes. Here, the inclination angle direction of about ± 45 around may mean the diagonal direction between the horizontal axis and the vertical axis, and the inclination angle in the diagonal direction may be measured in the same plane of the horizontal axis and the vertical axis.

In addition, referring to FIG. 7, another deposition mask 100 according to an embodiment may include a plurality of through holes. At this time, the plurality of through holes may have an oval shape. In detail, the horizontal diameter Cx and the vertical diameter Cy of the through hole TH may be different. For example, the diameter Cx in the horizontal direction of the through-hole may be larger than the diameter Cy in the vertical direction. However, the embodiment is not limited thereto, and the through hole may be a rectangular shape, an octagonal shape, or a rounded octagonal shape.

The through-holes TH may be arranged in a line in either the longitudinal axis or the horizontal axis, and may be alternately arranged in the other axis.

In detail, the first through hole TH1 and the second through hole TH2 may be arranged in a line in the horizontal axis, and the third through hole TH1 and the fourth through hole TH4 may be the first through hole TH1. And the second through-hole TH2 and the longitudinal axis, respectively.

When the through-holes TH are arranged in a line in one of the vertical axis or the horizontal axis, and are alternately arranged in the other direction, two adjacent through-holes TH1 in the other direction of the vertical axis or the horizontal axis An island portion (IS) may be located between TH2). Alternatively, the island portion IS may be positioned between the three through holes TH1, TH2, and TH3 positioned adjacent to each other. Of the three adjacent through-holes TH1, TH2, and TH3, two through-holes TH1, TH2 are through-holes arranged in a line, and the other through-hole TH3 is adjacent to a direction corresponding to the line-direction. In a position, it may mean a through hole that may be disposed in an area between the two through holes TH1 and TH2. An island portion IS may be disposed between the first through hole TH1, the second through hole TH2, and the third through hole TH3. Alternatively, the island portion IS may be disposed between the second through hole TH2, the third through hole TH3, and the fourth through hole TH4.

In addition, in the case of measuring the diameter (Cx) in the horizontal direction and the diameter (Cy) in the vertical direction of the reference hole as any one through hole in the deposition mask 100 according to the embodiment, the through hole adjacent to the reference hole The deviation between the diameters Cx in each horizontal direction between the THs and the deviations between the diameters Cy in the vertical direction may be implemented in about 2% to about 10%. That is, when the size variation between adjacent through-holes of one reference hole is about 2% to about 10%, uniformity of deposition can be secured. For example, the size variation between the reference hole and the adjacent through holes may be about 4% to about 9%. For example, the size variation between the reference hole and the adjacent through holes may be about 5% to about 7%. For example, the size variation between the reference hole and the adjacent through holes may be about 2% to about 5%. When the size deviation between the reference hole and the adjacent through holes is less than about 2%, the moire generation rate in the OLED panel after deposition may be increased. When the size deviation between the reference hole and the adjacent through holes exceeds about 10%, the incidence of color unevenness in the OLED panel after deposition may be increased. The average deviation of the through hole diameter may be ± 5㎛. For example, the average deviation of the through hole diameter may be ± 3 μm. For example, the average deviation of the through-hole diameter may be ± 1 μm. According to an embodiment, as the size variation between the reference hole and the adjacent through holes is implemented within ± 3 μm, deposition efficiency may be improved.

In addition, referring to FIG. 8, the deposition mask 100 may include a plurality of through holes TH. At this time, the plurality of through-holes TH may have a rectangular shape. For example, the through hole TH may have a rhombus shape. The through hole TH may have a horizontal length Cx and a vertical length Cy, and the horizontal length Cx and the vertical length Cy of the through hole TH. Can correspond to each other.

The through holes TH may be arranged in a line according to the direction. For example, the through holes TH may be arranged in a line on one of the vertical axis and the horizontal axis, and may be alternately arranged on the other axis.

In detail, the first through hole TH1, the second through hole TH2, and the third through hole TH3 may be arranged in a line in the horizontal axis, and the fourth through hole TH4 and the fifth through hole TH5. Silver may be arranged in a line on the horizontal axis, the fourth through hole (TH4) and the fifth through hole (TH5) is the first through hole (TH1), the second through hole (TH2) and the third through hole (TH3) Each may be staggered in the longitudinal axis. For example, the fourth through hole TH4 may be alternately disposed between the first through hole TH1 and the second through hole TH2, and the fifth through hole TH5 may be the second through hole TH2. And alternately disposed between the third through hole TH3.

When the through-holes TH are arranged in a line in either of the vertical axis or the horizontal axis, and are alternately arranged in the other direction, the island portion IS may be located at a point where the vertical axis and the horizontal axis intersect. . Alternatively, the island portion IS may be positioned between the four through-holes TH1, TH2, TH4, and TH6 adjacent to each other.

Two of the adjacent four through-holes TH1, TH2, TH4, and TH6 may refer to through-holes arranged in a line in either the vertical axis or the horizontal axis, and the other two The through-holes TH4 and TH6 may mean through-holes arranged in a line in the other direction of the vertical axis or the horizontal axis.

The island portion IS of FIGS. 6 to 8 means an etched surface between the through holes TH on the other surface of the deposition mask 100 in which the large hole V2 of the effective portion AA is formed. You can. In detail, the island portion IS is the other side of the etched deposition mask 100 excluding the second etched surface ES2 and the through hole TH located in the large hole in the effective portion AA of the deposition mask. You can. The deposition mask 100 of the embodiment may be for depositing high-resolution to ultra-high resolution OLED pixels having a resolution of 400 PPI or more, and in detail 400 PPI to 800 PPI or more.

For example, the deposition mask 100 of the embodiment may be for forming a deposition pattern having a high resolution of Full HD (High Definition) having a resolution of 400 PPI or more. For example, the deposition mask 100 of the embodiment may be for depositing OLED pixels in which the number of pixels in the horizontal direction and the vertical direction is 1920 * 1080 or more, and 400 PPI or more. That is, one effective part included in the deposition mask 100 of the embodiment may be for forming a number of pixels having a resolution of 1920 * 1080 or more.

For example, the deposition mask 100 of the embodiment may be for forming a deposition pattern having a high resolution of QHD (Quad High Definition) having a resolution of 500 PPI or more. For example, the deposition mask 100 of the embodiment may be for depositing OLED pixels in which the number of pixels in the horizontal direction and the vertical direction is 2560 * 1440 or more, and 530 PPI or more. Through the deposition mask 100 of the embodiment, the number of pixels per inch may be 530 PPI or more based on a 5.5 inch OLED panel. That is, one effective part included in the deposition mask 100 of the embodiment may be for forming a number of pixels having a resolution of 2560 * 1440 or more.

For example, the deposition mask 100 of the embodiment may be for forming a deposition pattern having ultra-high resolution of Ultra High Definition (UHD) having a resolution of 700 PPI or more. For example, the deposition mask 100 of the embodiment forms a deposition pattern having a resolution of UHD (Ultra High Definition) class for deposition of OLED pixels having a pixel count in the horizontal direction and the vertical direction of 3840 * 2160 or more, and 794 PPI or more. It may be to do.

The diameter of the through hole TH may be a width between the communication parts CA. In detail, the diameter of the through hole TH can be measured at the point where the end of the etching surface in the small face hole V1 meets the end of the etching face in the large face hole V2. The measuring direction of the diameter of the through hole TH may be any one of a horizontal direction, a vertical direction, and a diagonal direction. The diameter of the through hole TH measured in the horizontal direction may be 33 μm or less. Alternatively, the diameter of the through hole TH measured in the horizontal direction may be 33 μm or less. Alternatively, the diameter of the through hole TH may be an average value of values measured in the horizontal, vertical, and diagonal directions, respectively.

Therefore, the deposition mask 100 according to the embodiment may implement QHD-level resolution. For example, the diameter of the through hole TH may be about 15 μm to about 33 μm. For example, the diameter of the through hole TH may be about 19 μm to about 33 μm. For example, the diameter of the through hole TH may be about 20 μm to about 27 μm. When the diameter of the through hole TH is greater than about 33 μm, it may be difficult to realize a resolution of 500 PPI or higher. Meanwhile, when the diameter of the through hole TH is less than about 15 μm, deposition defects may occur.

Referring to FIG. 6, a pitch between two adjacent through holes TH among a plurality of through holes in a horizontal direction may be about 48 μm or less. For example, a pitch between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 20 μm to about 48 μm. For example, a pitch between two adjacent through holes TH among a plurality of through holes TH in the horizontal direction may be about 30 μm to about 35 μm. Here, the gap may mean a gap P1 between the center of two adjacent first through holes TH1 and the center of the second through holes TH2 in the horizontal direction. Alternatively, the distance may mean a distance P2 between the center of two adjacent first island portions and the center of the second island portions in the horizontal direction. Here, the center of the island portion IS may be a center on an etched other surface between four adjacent through holes TH in the horizontal and vertical directions. For example, the center of the island portion IS is adjacent to the first through hole TH1 in the vertical direction based on two first through holes TH1 and the second through hole TH2 adjacent in the horizontal direction. The horizontal axis connecting the edges of the third through hole TH3 and the second through hole TH2 and the one island portion IS located in the area between the adjacent fourth through hole TH4 in the vertical direction and the vertical axis connecting the edges It can mean the intersection point.

In addition, referring to FIG. 7, a pitch between two adjacent through holes TH among a plurality of through holes in a horizontal direction may be about 48 μm or less. For example, a pitch between two adjacent through holes TH among a plurality of through holes TH in the horizontal direction may be about 20 μm to about 48 μm. For example, a pitch between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 30 μm to about 35 μm. Here, the gap may mean a gap P1 between the center of two adjacent first through holes TH1 and the center of the second through holes TH2 in the horizontal direction. In addition, the distance may mean a distance P2 between the center of two adjacent first island portions and the center of the second island portions in the horizontal direction. Here, the center of the island portion IS may be a center on an etched other surface between one through-hole and two adjacent through-holes in the vertical direction. Alternatively, here, the center of the island portion IS may be a center on an etched other surface between two through holes and one adjacent through hole in the vertical direction. That is, the center of the island portion IS is a center on the other side of the etched surface between three adjacent through-holes, and the three adjacent through-holes may mean that a triangular shape can be formed when the center is the center.

The direction of measurement of the diameter of the through-hole TH and the distance between two adjacent through-holes TH may be the same. The gap between the through holes TH may be a measure of the gap between two adjacent through holes TH in the horizontal or vertical direction.

In addition, referring to FIG. 8, a pitch between two adjacent through holes TH among a plurality of through holes in a horizontal direction may be about 48 μm or less. For example, a pitch between two adjacent through holes TH among a plurality of through holes TH in the horizontal direction may be about 20 μm to about 48 μm. For example, a pitch between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 30 μm to about 35 μm. Here, the gap may mean a gap P1 between the center of two adjacent first through holes TH1 and the center of the second through holes TH2 in the horizontal direction. Alternatively, the distance may mean a distance P2 between the center of two adjacent first island portions and the center of the second island portions in the horizontal direction. Here, the center of the island portion IS may be a center on an etched other surface between four adjacent through holes TH in the horizontal and vertical directions. For example, the center of the island portion IS is adjacent to the first through hole TH1 in the vertical direction based on two first through holes TH1 and the second through hole TH2 adjacent in the horizontal direction. The horizontal axis connecting the edges of the third through hole TH3 and the second through hole TH2 and the one island portion IS located in the area between the adjacent fourth through hole TH4 in the vertical direction and the vertical axis connecting the edges It can mean the intersection point. For example, the center of the island portion IS is the first through hole TH1 and the second through hole TH2, which are two through holes adjacent in the horizontal direction, and the first through hole TH1 and the second The center of the region between the through holes TH2 may be the center of the other etched other surface located in the region between the fourth through holes TH4 and the six through holes TH4, which are vertically adjacent two through holes. That is, the center of the island portion IS may be the center of the non-etched surface located between the four through holes.

In addition, as shown in FIGS. 6 to 8, the large hole V2 may include a plurality of inner surfaces. In detail, the face hole V2 may include a second inner surface ES2 and a third inner surface ES3. The face hole is formed by connecting a plurality of second inner surfaces ES2 and a plurality of third inner surfaces ES3. Preferably, the plurality of second inner surfaces ES2 and the plurality of third inner surfaces ES3 form a face hole of one through hole.

The second inner surface ES2 of the face hole is an inner face located in a horizontal direction with respect to the center of the face hole of the through hole. Preferably, the second inner surface ES2 is an inner surface located on both sides in the longitudinal direction with respect to the center of the large hole. The second inner surface ES2 is an inner surface located on both sides of the tensile direction with respect to the center of the large hole. The second inner surface ES2 is an inner surface located on both sides of the X-axis direction with respect to the center of the large hole. Accordingly, the second inner surface ES2 has a first sub second inner surface ES2-1 positioned in a first longitudinal direction based on a center of a large hole in the through hole, and a second opposite to the first longitudinal direction. And a second sub second inner surface ES2-2 positioned in the longitudinal direction. Meanwhile, the cross-sectional inclination angle of the first sub-second inner surface ES2-1 may correspond to the cross-sectional inclination angle of the second sub-second inner surface ES2-2. That is, the cross-sectional inclination angle θ1 of the first sub-second inner surface ES2-1 and the second sub-second inner surface ES2-2 may be the same.

The third inner surface ES3 of the face hole is an inner face located in a vertical direction with respect to the center of the face hole of the through hole. Preferably, the third inner surface ES3 is an inner surface located on both sides in the width direction with respect to the center of the large hole. The third inner surface ES3 is an inner surface located on both sides in a direction perpendicular to the tensile direction with respect to the center of the large hole. The third inner surface ES3 is an inner surface located on both sides of the Y-axis direction with respect to the center of the large hole. Therefore, the third inner surface ES3 is a first sub third inner surface ES3-1 positioned in a first width direction based on a center of a large hole of the through hole, and a second opposite to the first width direction. And a second sub-third inner surface ES3-2 positioned in the width direction. Meanwhile, a cross-sectional inclination angle of the first sub-third inner surface ES3-1 may correspond to a cross-sectional inclination angle of the second sub-third inner surface ES3-2. That is, the cross-sectional inclination angle θ2 of the first sub third inner surface ES3-1 and the second sub third inner surface ES3-2 may be the same.

Meanwhile, the cross-sectional inclination angle θ1 of the second inner surface ES2 may be different from the cross-sectional inclination angle θ2 of the third inner surface ES3. That is, the cross-sectional inclination angle θ1 of the second inner surface ES2 may be smaller than the cross-sectional inclination angle θ2 of the third inner surface ES3. That is, the face hole of the through hole may have a larger cross-sectional inclination angle θ2 of the inner surface in the width direction crossing the longitudinal direction than the cross-sectional inclination angle θ1 of the inner surface in the longitudinal direction.

The second inner surface ES2 and the third inner surface ES3 may be surfaces formed by an etching factor during an etching process. The second inner surface ES2 and the third inner surface ES3 may be inner surfaces extending from the through hole TH to the other surface 102 of the deposition mask 100. For example, the second inner surface ES2 and the third inner surface ES3 may extend from an end of the through hole TH to an adjacent through hole TH, and the island portion IS Direction. In addition, the second inner surface ES2 and the third inner surface ES3 may extend in the direction of the ineffective portion UA. That is, the second inner surface ES2 and the third inner surface ES3 may extend in a direction in which a non-etched surface is formed among the other surfaces 102 of the deposition mask 100.

Ribs RB1 and RB may be positioned between the through holes TH. For example, referring to FIG. 6, one second rib RB2 may be formed between the first through hole TH1 and the second through hole TH2 adjacent in the horizontal direction. In addition, another first rib RB1 may be formed between the first through hole TH1 and the third through hole TH3 adjacent in the vertical direction.

The first rib RB1 extends and is disposed on the deposition mask 100 in the longitudinal direction. The first rib RB1 is positioned in the longitudinal direction between a plurality of through holes arranged in the width direction on the deposition mask 100. The first rib RB1 connects a plurality of island portions IS arranged in the longitudinal direction on the deposition mask 100.

The second rib RB2 extends in the width direction on the deposition mask 100 and is disposed. The second rib RB2 is formed in the width direction between the plurality of through holes arranged in the longitudinal direction on the deposition mask 100. The second rib RB2 connects a plurality of island portions IS arranged in the width direction on the deposition mask 100.

In addition, referring to FIG. 7, one rib RB1 and RB2 may be formed between the first through hole TH1 and the second through hole TH2 adjacent in the horizontal direction, and the first through hole TH1 ) And another rib RB1 and RB2 may be formed between the diagonally adjacent third through holes TH3.

That is, ribs RB1 and RB2 may be positioned between through holes TH adjacent to each other. In detail, the ribs RB1 and RB2 may be positioned between the facing holes V2 adjacent to each other. In more detail, the first rib RB1 may be located in a region where the second inner surfaces ES2 adjacent to each other are connected to each other. In more detail, the second rib RB2 may be positioned in a region where the third inner surfaces ES3 adjacent to each other are connected to each other. That is, the ribs (RB1, RB2) may be a region where the boundaries of the adjacent large holes (V2) are connected to each other.

The first rib RB1 may have a first thickness T1. In addition, the second rib RB2 may have a second thickness T2 different from the first thickness T1. The thickness of the first rib RB1 may be different from the thickness of the second rib RB2. In detail, the thickness of the first rib RB1 may be greater than the thickness of the second rib RB2. That is, the first rib RB1 is located in a region connecting the third inner surfaces ES3 of adjacent through holes, and the second rib RB2 is a region connecting the second inner surfaces ES2 of adjacent through holes. Is located in At this time, the cross-sectional inclination angle of the third inner surface ES3 is greater than the cross-sectional inclination angle of the second inner surface ES2. Therefore, the thickness of the first rib RB1 located in the region connecting the second inner surface ES2 having the larger cross-sectional inclination angle is located in the region connecting the third inner surface ES3 having the smaller inclined cross-section angle. It may be larger than the thickness of the rib (RB2).

That is, the deposition mask 100 according to the embodiment may deposit an OLED pixel having a resolution of 400 PPI or more. In detail, the deposition mask 100 according to the embodiment has a resolution of 500 PPI or more, as the diameter of the through-hole TH is about 33 µm or less, and the pitch between the through-holes TH is about 48 µm or less. OLED pixels can be deposited. That is, QHD-level resolution may be implemented using the deposition mask 100 according to the embodiment.

The diameter of the through hole TH and the distance between the through holes TH may be sized to form a green sub-pixel. For example, the diameter of the through hole TH can be measured based on the green (G) pattern. Since the green (G) pattern has a low recognition rate through vision, a larger number is required than the red (R) pattern and the blue (B) pattern, and the distance between the through holes TH is a red (R) pattern and a blue ( B) It may be narrower than the pattern. The deposition mask 100 may be an OLED deposition mask for realizing QHD display pixels.

For example, the deposition mask 100 may be for depositing at least one sub-pixel of red (R), first green (G1), blue (B), and second green (G2). In detail, the deposition mask 100 may be for depositing a red (R) sub-pixel. Alternatively, the deposition mask 100 may be for depositing a blue (B) sub-pixel. Alternatively, the deposition mask 100 may be for simultaneously forming a first green (G1) subpixel and a second green (G2) subpixel.

The pixel arrangement of the organic light emitting diode display may be arranged in the order of 'Red (R)-first green (G1)-blue (B)-second green (G2)' (RGBG). In this case, the red (R) -first green (G1) may form one pixel RG, and the blue (B) -second green (G2) may form another pixel (BG). In the organic light emitting display device having such an arrangement, since the deposition interval of the green light-emitting organic material is narrower than that of the red light-emitting organic material and the blue light-emitting organic material, the deposition mask 100 of the same type as the present invention may be required.

Further, in the deposition mask 100 according to the embodiment, the diameter of the through hole TH may be about 20 μm or less in the horizontal direction. Accordingly, the deposition mask 100 according to the embodiment may implement UHD-level resolution. For example, the deposition mask 100 according to the embodiment has a resolution of 800 PPI as the diameter of the through hole TH is about 20 μm or less and the distance between the through holes is about 32 μm or less. OLED pixels can be deposited. That is, a UHD-level resolution may be implemented using a deposition mask according to an embodiment.

The diameter of the through hole and the distance between the through holes may be sized to form a green sub-pixel. The deposition mask may be an OLED deposition mask for realizing UHD display pixels.

FIG. 9 is a view showing each section overlapped to explain the height difference and size between the section in the A-A 'direction and the section in the B-B' direction of FIG. 6.

First, the cross section in the A-A 'direction will be described. The A-A 'direction is a cross-section crossing a central region between two adjacent first through holes TH1 and third through holes TH3 in the vertical direction. That is, the cross section in the A-A 'direction may not include a through hole TH.

In the cross section in the A-A 'direction, the island portion (IS), which is the other surface of the deposition mask that is not etched between the third inner surface ES3 in the large hole and the third inner surface ES3 in the large hole, is provided. Can be located. Accordingly, the island portion IS may include a surface parallel to an unetched surface of the deposition mask. Alternatively, the island portion IS may include a surface that is the same as or parallel to the other surface of the deposition mask 100 that is not etched.

Next, a cross section in the B-B direction is described. The B-B 'direction is a cross section crossing the center of each of the two first through holes TH1 and the second through holes TH2 adjacent in the horizontal direction. That is, the cross section in the B-B 'direction may include a plurality of through holes TH.

One second rib RB2 may be positioned between the adjacent third through hole TH3 and the fourth through hole TH4 in the B-B 'direction. The fourth through hole TH4 and the fourth through hole are adjacent to each other in the horizontal direction, but another second rib RB2 may be located between the third through hole TH3 and the fifth through hole located in the opposite direction. have. One through hole TH may be positioned between the second rib and the other second rib. That is, one through hole TH may be positioned between two adjacent second ribs RB1 in the horizontal direction.

In addition, in the cross-section in the A-A 'direction, a first rib RB1, which is a region in which the second inner surface ES2 in the face-to-face hole and the second inner face ES2 in the adjacent face-to-face hole are connected to each other, will be located. You can. Here, the first rib RB1 may be a region in which a boundary between two adjacent large face holes is connected in a vertical direction.

Since the first and second ribs RB1 and RB2 are etched surfaces, the thickness may be smaller than that of the island portion IS. For example, the width of the island portion IS may be about 2 μm or more. That is, a width in a direction parallel to the other surface of the portion remaining without being etched on the other surface may be about 2 μm or more. When the width of one end and the other end of the island portion IS is about 2 μm or more, the total volume of the deposition mask 100 may be increased. The deposition mask 100 having such a structure may ensure sufficient stiffness with respect to the tensile force imparted in the organic material deposition process, and may be advantageous in maintaining the uniformity of the through hole.

10 is a view showing a cross-sectional view in the BB 'direction of FIG. 6, and is a view showing a cross-sectional view in the CC' direction of FIG. 11, and FIG. It is a drawing.

10 to 12 show the difference between the cross-sectional inclination angle of the second inner surface ES2 and the cross-sectional inclination angle of the third inner surface ES3 in the through-hole. 10 to 12 are the thickness of the second rib (RB2) located in the region where the second inner surface (ES2) is connected, and the thickness of the first rib (RB1) located in the region where the third inner surface (ES3) is connected. Shows the difference. 10 to 12 are heights between one surface and the communicating portion of the deposition mask 100 on which the small hole V1 on the first rib RB1 is formed, and the small hole on the second rib RB2 ( V1) shows the difference in height between one surface and the communicating portion of the deposition mask.

10 to 12, a cross section in the B-B 'direction, a cross section in the C-C' direction, and a longitudinal cross section in the D-D 'direction will be described. In addition, the through holes TH between the ribs RB1 and RB2 of the effective area according to FIGS. 10 to 12 and the ribs RB1 and RB2 will be described.

10 to 12, in the deposition mask 100 according to the embodiment, the thickness in the effective portion AA in which the through-hole through etching is formed and the thickness in the non-etched non-effective portion UA are mutually different. can be different. In detail, the thickness of the first rib RB1 and the second rib RB2 may be smaller than the thickness in the non-etched non-effective portion UA.

In the deposition mask 100 according to the embodiment, the thickness of the non-effective portion UA may be greater than the thickness of the effective portions AA1, AA2, and AA3. For example, the maximum thickness of the non-effective portion UA to the non-deposition region NDA of the deposition mask 100 may be about 30 μm or less. For example, the maximum thickness of the non-effective portion UA to the non-deposition region NDA of the deposition mask 100 may be about 25 μm or less. For example, the deposition mask of the embodiment may have a maximum thickness of an ineffective region to a non-deposited region of about 15 μm to about 25 μm. When the maximum thickness of the ineffective region to the non-deposited region of the deposition mask according to the embodiment exceeds about 30 μm, since the thickness of the metal plate 10, which is the raw material of the deposition mask 100, becomes thicker, penetration of a fine size It may be difficult to form the hole TH. In addition, when the maximum thickness of the non-effective area UA to the non-deposition area NDA of the deposition mask 100 is less than about 15 μm, it may be difficult to form a through hole having a uniform size because the thickness of the metal plate is thin. .

The maximum thicknesses T1 and T2 measured at each center of the first and second ribs RB1 and RB2 may be about 15 μm or less. For example, the maximum thicknesses T1 and T2 measured at the centers of the first and second ribs RB1 and RB2 may be about 7 μm to about 10 μm. For example, the maximum thicknesses T1 and T2 measured at the centers of the first and second ribs RB1 and RB2 may be about 6 μm to about 9 μm. When the maximum thicknesses T1 and T2 measured at the centers of the first and second ribs RB1 and RB2 exceed about 15 μm, it may be difficult to form an OLED deposition pattern having a high resolution of 500 PPI or higher. In addition, when the maximum thicknesses T1 and T2 measured at the centers of the first and second ribs RB1 and RB2 are less than about 6 μm, uniform formation of a deposition pattern may be difficult.

Meanwhile, the maximum thicknesses T1 and T2 measured at the centers of the first and second ribs RB1 and RB2 may be different from each other. In detail, the maximum thicknesses T1 and T2 measured at the centers of the first and second ribs RB1 and RB2 may have different values while satisfying the above range. More specifically, the maximum thickness T1 measured at the center of the first rib RB1 may be greater than the maximum thickness T2 measured at the center of the second rib RB2. The maximum thickness T1 measured at the center of the first rib RB1 may have a value greater than the maximum thickness T2 measured at the center of the second rib RB2 within the above-described range. In other words, the maximum thickness T1 measured at the center of the first rib RB1 may have a constant difference value ΔT from the maximum thickness T2 measured at the center of the second rib RB2. .

The height of the small face hole of the deposition mask 100 may be about 0.2 times to about 0.4 times the maximum thickness (T1, T2) of the two ribs (RB1, RB2). Accordingly, the height of the small surface hole formed on the first rib RB1 may be different from the height of the small surface hole formed on the second rib RB2. In other words, in the small hole of the through hole, the height of the small hole in the first direction (specifically, in the longitudinal direction) may be different from the height of the small hole in the second direction (specifically, in the width direction). In detail, the height H2 of the small hole formed on the first rib RB1 may be greater than the height H1 of the small hole formed on the second rib RB2.

In one example, the maximum thickness measured at the center of the first rib (RB1) or the second rib (RB2) is about 7㎛ to about 9㎛, the small surface between one surface of the deposition mask 100 and the communication portion The ball height can be from about 1.4 μm to about 3.5 μm.

The height H2 of the small hole in the first rib RB1 of the deposition mask 100 may be about 4.0 μm or less. The height H1 of the small hole in the second rib RB2 of the deposition mask 100 may be about 3.5 μm or less.

Preferably, the height H2 of the small hole in the first rib RB1 of the deposition mask 100 may be about 3.5 μm or less. The height H1 of the small hole in the second rib RB2 of the deposition mask 100 may be about 2.5 μm or less.

Preferably, the height H2 of the small hole in the first rib RB1 may be about 0.1 μm to about 3.4 μm. In addition, the height H1 of the small hole in the second rib RB2 may be 0.1 μm to about 2.4 μm. For example, the height of the small hole V1 in the first rib RB1 of the deposition mask 100 may be about 0.5 μm to about 3.2 μm. For example, the height of the small hole V1 in the second rib RB1 of the deposition mask 100 may be about 0.5 μm to about 2.2 μm. For example, the height of the small hole in the first rib RB1 of the deposition mask 100 may be about 1 μm to about 3 μm. For example, the height of the small hole in the second rib RB2 of the deposition mask 100 may be about 1 μm to about 2 μm. Here, the height may be measured in a thickness measurement direction of the deposition mask 100, that is, in a depth direction, and may be a height measured from one surface of the deposition mask 100 to the communicating portion. In detail, the horizontal direction (x direction, length direction, tensile direction) and vertical direction (y direction, width direction, tensile vertical direction) described above in the plan view of FIG. 5 may be measured in the z-axis direction forming 90 degrees, respectively. .

When the height between the one surface of the deposition mask 100 and the communication portion is greater than about 3.5 μm, deposition defects may occur due to a shadow effect in which the deposition material spreads to an area larger than the through-hole area during OLED deposition. You can. Therefore, the height of the small surface hole in the first rib RB1 is 3.5 µm or less, and the height of the small surface hole in the second rib RB2 is 3.0 µm or less. On the other hand, the height of the small surface hole in the first rib (RB1) may have a certain difference value (ΔH) from the height of the small surface hole in the second rib (RB2).

In addition, the pore diameter (W4) in the communicating portion, which is the boundary between the small diameter hole (V1) and the small face hole (V1) and the large face hole (V2), is formed on the one side where the small face hole (V1) of the deposition mask 100 is formed. They can be similar or different. The pore diameter W3 on one surface where the small face hole V1 of the deposition mask 100 is formed may be larger than the pore diameter W4 in the communication portion. For example, the difference between the pore diameter W3 on one surface of the deposition mask 100 and the pore diameter W4 on the communication portion may be about 0.01 μm to about 1.1 μm. For example, the difference between the pore diameter W3 on one surface of the deposition mask and the pore diameter W4 on the communication portion may be about 0.03 μm to about 1.1 μm. For example, the difference between the pore diameter W3 on one surface of the deposition mask and the pore diameter W4 on the communication portion may be about 0.05 μm to about 1.1 μm.

When the difference between the pore diameter W1 on one surface of the deposition mask 100 and the pore diameter W2 on the communication portion is greater than about 1.1 μm, deposition defects due to a shadow effect may occur.

In addition, on the second rib (RB2), one end (E1) and the small face hole (E1) of the second inner surface (ES2) of the large hole (V2) located on the other surface opposite to one surface of the deposition mask (100) The cross-sectional inclination angle θ1 connecting one end E2 of the communication portion between V1) and the face hole V2 may be 35 to 45 degrees. On the first rib RB1, one end E3 and the small face hole V1 of the third inner surface ES3 of the large face hole V2 located on the other side opposite to one surface of the deposition mask 100 The cross-sectional inclination angle θ2 connecting the one end E4 of the communication portion between the and the face hole V2 may be 45 degrees to 55 degrees.

Accordingly, it is possible to form a high-resolution deposition pattern of 400 PPI or higher, in detail 500 PPI or higher, and at the same time, an island portion IS may be present on the other surface of the deposition mask 100.

According to an embodiment, the face hole of the through-hole has a first cross-section inclination angle in the longitudinal direction, a second cross-section inclination angle greater than the first cross-section inclination angle in the width direction, and the first cross-section inclination angle and the first 2 It is possible to increase the thickness of the ribs arranged in the longitudinal direction by the difference in the inclination angle of the cross-section, thereby securing the rigidity of the deposition mask. In addition, as the rigidity of the deposition mask is secured, length deformation can be minimized, and accordingly, the pattern deposition efficiency can be improved by increasing the uniformity of the shape of the mask pattern and the position of the through hole.

In addition, according to the embodiment, the inclination angle of the large hole of the through hole in the direction perpendicular to the direction of movement of the organic material deposition container is reduced to uniformly deposit the OLED pixel pattern in all regions regardless of the position of the through hole.

13 is a plan view showing an effective portion of the deposition mask 100 according to the second embodiment, FIG. 14 is a cross-sectional view showing a second through hole in FIG. 13, and FIG. 15 is a third in FIG. It is a sectional view showing a through hole.

The deposition mask in FIG. 13 differs from the deposition mask in FIG. 6 in the through hole disposed at the outermost portion of the effective portion. Therefore, hereinafter, only the through-holes arranged at the outermost portion of the effective portion in FIG. 13 as compared with FIG. 6 will be described.

Referring to FIG. 13, the effective portion of the deposition mask may include a plurality of through holes. The plurality of through holes may include a first through hole VH1 disposed in an inner region of the effective portion, a second through hole VH2 disposed in a first outermost portion of the effective portion, and a second outermost portion of the effective portion. A third through hole VH3 disposed in the portion may be included.

The first through hole VH1 is the same as the through hole described with reference to FIGS. 9 to 12. That is, the first through hole VH1 includes a second inner surface ES2 and a third inner surface ES3. In addition, the second inner surface ES2 has the same first cross-section inclination angle while facing each other in the longitudinal direction, the first sub-second inner surface ES2-1 and the second sub-second inner surface ES2-2. ).

In addition, the third inner surface ES3 has the same second cross-section inclination angle while facing each other in the width direction with the first sub-third inner surface ES3-1 and the second sub-third inner surface ES3-2. ). In addition, the first cross-sectional inclination angle of the first through hole VH1 is smaller than the second cross-sectional inclination angle.

Meanwhile, the second through hole VH2 may be disposed at the first outermost portion of the effective portion, and the third through hole VH3 may be disposed at the second outermost portion opposite to the first outermost portion. In detail, the first outermost portion may be the outermost region in the first longitudinal direction within the effective portion. In this case, the first length direction may be a left direction. Accordingly, the first outermost portion may be an area located on the leftmost side in the effective portion. The second outermost portion may be the outermost region in the second longitudinal direction within the effective portion. At this time, the second length direction may be a right direction. Accordingly, the second outermost portion may be an area located at the rightmost side in the effective portion.

A second through hole VH2 is disposed in the first outermost portion, and a third through hole VH3 is disposed in the second outermost portion.

The face hole of the second through hole VH2 includes the second inner surface ES2 and the third inner surface ES3 like the first through hole VH1. In this case, the third inner surface ES3 of the face hole of the second through hole VH2 may have the same cross-sectional inclination angle as the third inner face ES3 of the face hole of the first through hole VH1. . However, the cross-sectional inclination angle of the second inner surface ES2 of the face hole of the second through hole VH2 may be different from the cross-sectional inclination angle of the second inner surface ES2 of the face hole of the first through hole VH1. have.

The second inner surface ES2 of the face hole of the second through hole VH2 has a third sub second inner surface ES2-3 and a fourth sub second inner surface ES2 facing each other in the longitudinal direction. -4).

At this time, the third sub-second inner surface ES2-3 is located in a region adjacent to the non-effective portion UA, and the fourth sub-second inner surface ES2-4 is an inner region (central region) of the effective portion. ).

In addition, the third sub second inner surface ES2-3 has a third cross-section inclination angle, and the fourth sub second inner surface ES2-4 has a fourth cross-section inclination angle. At this time, the third cross-sectional inclination angle and the fourth cross-sectional inclination angle may be different from each other. That is, the third sub-second inner surface ES2-3 may have a cross-sectional tilt angle different from that of the fourth sub-second inner surface ES2-4. Preferably, the cross-sectional inclination angle of the third sub-second inner surface ES2-3 may be greater than the cross-sectional inclination angle of the fourth sub-second inner surface ES2-4.

In addition, the thickness of the third rib connected to the third sub second inner surface ES2-3 and the fourth rib connected to the fourth sub second inner surface ES2-4 may also be different. That is, the thickness of the third rib connected to the third sub second inner surface ES2-3 may be thicker than the thickness of the fourth rib connected to the fourth sub second inner surface ES2-4.

The maximum thicknesses (T3, T4) measured at each center of the third and fourth ribs may be about 15 μm or less. For example, the maximum thicknesses T3 and T4 measured at each center of the third and fourth ribs may be about 7 μm to about 10 μm. For example, the maximum thicknesses T3 and T4 measured at each center of the third and fourth ribs may be about 6 μm to about 9 μm. When the maximum thicknesses T3 and T4 measured at the centers of the third and fourth ribs exceed about 15 μm, it may be difficult to form an OLED deposition pattern having a high resolution of 500 PPI or higher. In addition, when the maximum thicknesses T3 and T4 measured at the centers of the third and fourth ribs are less than about 6 μm, uniform formation of the deposition pattern may be difficult.

Meanwhile, the maximum thicknesses T3 and T4 measured at the centers of the third and fourth ribs may be different from each other. In detail, the maximum thicknesses T3 and T4 measured at each center of the third and fourth ribs may have different values while satisfying the above range. More specifically, the maximum thickness T4 measured at the center of the fourth rib may be smaller than the maximum thickness T3 measured at the center of the third rib. The maximum thickness T4 measured at the center of the fourth rib may have a value smaller than the maximum thickness T3 measured at the center of the third rib within the above-described range.

The height of the small hole of the second through hole VH2 of the deposition mask 100 may be about 0.2 to about 0.4 times the maximum thicknesses T3 and T4 measured at the centers of the third and fourth ribs. Accordingly, the height of the small hole formed on the fourth rib may be different from the height of the small hole formed on the third rib. In detail, the height H4 of the small hole formed on the fourth rib may be smaller than the height H3 of the small hole formed on the third rib.

In one example, the maximum thickness measured at the center of the third rib or the fourth rib is about 7 μm to about 9 μm, and the height of the small hole between one surface of the second through hole of the deposition mask 100 and the communication portion is It may be from about 1.4㎛ to about 3.5㎛.

The height H4 of the small hole in the third rib of the deposition mask 100 may be about 4.0 μm or less. The height H1 of the small hole in the fourth rib of the deposition mask 100 may be about 3.5 μm or less.

Preferably, the height (H3) of the small hole in the third rib of the second through hole of the deposition mask 100 may be about 3.5 μm or less. The height H4 of the small hole in the fourth rib of the second through hole of the deposition mask 100 may be about 2.5 μm or less.

Preferably, the height H3 of the small hole in the third rib may be about 0.1 μm to about 3.4 μm. In addition, the height H4 of the small hole in the fourth rib may be 0.1 μm to about 2.4 μm. For example, the height of the small hole V1 in the third rib of the deposition mask 100 may be about 0.5 μm to about 3.2 μm. For example, the height of the small hole V1 in the fourth rib of the deposition mask 100 may be about 0.5 μm to about 2.2 μm. For example, the height of the small hole in the third rib of the deposition mask 100 may be about 1 μm to about 3 μm. For example, the height of the small hole in the fourth rib of the deposition mask 100 may be about 1 μm to about 2 μm. Here, the height may be measured in a thickness measurement direction of the deposition mask 100, that is, in a depth direction, and may be a height measured from one surface of the deposition mask 100 to the communicating portion. In detail, the horizontal direction (x direction, length direction, tensile direction) and vertical direction (y direction, width direction, tensile vertical direction) described above in the plan view of FIG. 5 may be measured in the z-axis direction forming 90 degrees, respectively. .

When the height between the one surface of the deposition mask 100 and the communication portion is greater than about 3.5 μm, deposition defects may occur due to a shadow effect in which the deposition material spreads to an area larger than the through-hole area during OLED deposition. You can. Therefore, the height of the small surface hole in the third rib is 3.5 µm or less, and the height of the small surface hole in the fourth rib is 3.0 µm or less.

Further, on the third rib, one end (E5) and the small surface of the third sub second inner surface (ES2-3) of the large hole (V2) located on the other surface opposite to one surface of the deposition mask (100) The cross-sectional inclination angle θ3 connecting the one end E6 of the communication portion between the ball V1 and the face hole V2 may be 45 to 55 degrees. On the fourth rib, one end E7 and the small face hole of the fourth sub second inner surface ES2-4 of the large face hole V2 located on the other side opposite to one surface of the deposition mask 100 The cross-sectional inclination angle θ4 connecting the one end E8 of the communication portion between V1) and the face hole V2 may be 35 to 45 degrees.

Meanwhile, the face hole of the third through hole VH3 includes a second inner surface ES2 and a third inner surface ES3 like the first through hole VH1. At this time, the third inner surface ES3 of the face hole of the third through hole VH3 may have the same cross-sectional inclination angle as the third inner face ES3 of the face hole of the first through hole VH1. . However, the cross-sectional inclination angle of the second inner surface ES2 of the face hole of the third through hole VH3 may be different from the cross-sectional inclination angle of the second inner surface ES2 of the face hole of the first through hole VH1. have.

The second inner surface ES2 of the face hole of the third through hole VH3 has a fifth sub second inner surface ES2-5 facing each other in the longitudinal direction, and a sixth sub second inner surface ES2. -6).

At this time, the fifth sub second inner surface ES2-5 is located in an area adjacent to the non-effective portion UA, and the sixth sub second inner surface ES2-5 is an inner region (central region) of the effective portion. ).

In addition, the fifth sub second inner surface ES2-5 has a fifth cross-sectional inclination angle, and the sixth sub second inner surface ES2-6 has a sixth cross-sectional inclination angle. At this time, the fifth cross-section inclination angle and the sixth cross-section inclination angle may be different from each other. That is, the fifth sub-second inner surface ES2-5 may have a cross-sectional tilt angle different from that of the sixth sub-second inner surface ES2-6. Preferably, a cross-sectional inclination angle of the fifth sub-second inner surface ES2-5 may be greater than a cross-sectional inclination angle of the sixth sub-second inner surface ES2-6.

In addition, the thickness of the fifth rib connected to the fifth sub second inner surface ES2-5 and the sixth rib connected to the sixth sub second inner surface ES2-6 may also be different. That is, the thickness of the fifth rib connected to the fifth sub second inner surface ES2-5 may be thicker than the thickness of the sixth rib connected to the sixth sub second inner surface ES2-6.

The maximum thicknesses (T5, T6) measured at each center of the fifth and sixth ribs may be about 15 μm or less. For example, the maximum thicknesses T5 and T6 measured at each center of the fifth and sixth ribs may be about 7 μm to about 10 μm. For example, the maximum thicknesses T5 and T6 measured at each center of the fifth and sixth ribs may be about 6 μm to about 9 μm. When the maximum thicknesses T5 and T6 measured at the centers of the fifth and sixth ribs exceed about 15 μm, it may be difficult to form an OLED deposition pattern having a high resolution of 500 PPI or higher. In addition, when the maximum thicknesses T5 and T6 measured at the centers of the fifth and sixth ribs are less than about 6 μm, uniform formation of the deposition pattern may be difficult.

Meanwhile, the maximum thicknesses T5 and T6 measured at the centers of the fifth and sixth ribs may be different from each other. In detail, the maximum thicknesses T5 and T6 measured at each center of the fifth and sixth ribs may have different values while satisfying the above range. More specifically, the maximum thickness T6 measured at the center of the sixth rib may be smaller than the maximum thickness T5 measured at the center of the fifth rib. The maximum thickness T6 measured at the center of the sixth rib may have a value smaller than the maximum thickness T5 measured at the center of the fifth rib within the above-described range.

The height of the small hole of the third through hole VH3 of the deposition mask 100 may be about 0.2 times to about 0.4 times the maximum thicknesses T5 and T6 measured at the centers of the fifth and sixth ribs. Accordingly, the height of the small hole formed on the sixth rib may be different from the height of the small hole formed on the fifth rib. In detail, the height H6 of the small hole formed on the sixth rib may be smaller than the height H5 of the small hole formed on the fifth rib.

For example, the maximum thickness measured at the center of the fifth rib or the sixth rib is about 7 μm to about 9 μm, and the height of the small hole between one surface of the third through hole of the deposition mask 100 and the communication portion is It may be from about 1.4㎛ to about 3.5㎛.

The height H5 of the small surface hole in the fifth rib of the deposition mask 100 may be about 4.0 μm or less. The height H6 of the small surface hole in the sixth rib of the deposition mask 100 may be about 3.5 μm or less. Preferably, the height H5 of the small hole in the fifth rib of the third through hole of the deposition mask 100 may be about 3.5 μm or less. The height H6 of the small hole in the sixth rib of the third through hole of the deposition mask 100 may be about 2.5 μm or less.

Preferably, the height H5 of the small hole in the fifth rib may be about 0.1 μm to about 3.4 μm. Further, the height H6 of the small hole in the sixth rib may be 0.1 μm to about 2.4 μm. For example, the height of the small hole V1 in the fifth rib of the deposition mask 100 may be about 0.5 μm to about 3.2 μm. For example, the height of the small hole V1 in the sixth rib of the deposition mask 100 may be about 0.5 μm to about 2.2 μm. For example, the height of the small hole in the fifth rib of the deposition mask 100 may be about 1 μm to about 3 μm. For example, the height of the small hole in the sixth rib of the deposition mask 100 may be about 1 μm to about 2 μm. Here, the height may be measured in a thickness measurement direction of the deposition mask 100, that is, in a depth direction, and may be a height measured from one surface of the deposition mask 100 to the communicating portion. In detail, the horizontal direction (x direction, length direction, tensile direction) and vertical direction (y direction, width direction, tensile vertical direction) described above in the plan view of FIG. 5 may be measured in the z-axis direction forming 90 degrees, respectively. .

When the height between the one surface of the deposition mask 100 and the communication portion is greater than about 3.5 μm, deposition defects may occur due to a shadow effect in which the deposition material spreads to an area larger than the through-hole area during OLED deposition. You can. Therefore, the height of the small surface hole in the fifth rib is 3.5 µm or less and the height of the small surface hole in the sixth rib is 3.0 µm or less.

Further, on the fifth rib, one end (E9) and the small surface of the fifth sub second inner surface (ES2-5) of the large hole (V2) located on the other surface opposite to one surface of the deposition mask (100) The cross-sectional inclination angle θ5 connecting the one end E10 of the communication portion between the ball V1 and the face hole V2 may be 45 to 55 degrees. On the sixth rib, one end (E11) of the sixth sub second inner surface (ES2-6) of the large surface hole (V2) located on the other surface opposite to one surface of the deposition mask (100) and the small surface hole ( The cross-sectional inclination angle θ6 connecting one end E12 of the communication portion between V1) and the face hole V2 may be 35 degrees to 45 degrees.

16 is a view showing a method of manufacturing a deposition mask 100 according to an embodiment.

Referring to FIG. 16, a method of manufacturing a deposition mask 100 according to an embodiment includes preparing a metal plate 10, disposing a photoresist layer on the metal plate 10 to form a through hole, and The removing of the photoresist layer may include forming a deposition mask 100 including the through hole.

First, the metal plate 10, which is a basic material for manufacturing the deposition mask 100, is prepared (S410).

The metal plate 10 may include a metal material. For example, the metal plate 10 may include nickel (Ni). In detail, the metal plate 10 may include iron (Fe) and nickel (Ni). More specifically, the metal plate 10 may include iron (Fe), nickel (Ni), oxygen (O), and chromium (Cr). In addition, the metal plate 10 is a small amount of carbon (C), silicon (Si), sulfur (S), phosphorus (P), manganese (Mn), titanium (Ti), cobalt (Co), copper (Cu), It may further include at least one element of silver (Ag), vanadium (V), niobium (Nb), indium (In), and antimony (Sb). The Invar is an alloy containing iron and nickel, and is a low thermal expansion alloy having a coefficient of thermal expansion close to zero. That is, since the thermal expansion coefficient of the invar is very small, it is used for precision components such as masks and precision equipment. Therefore, the deposition mask manufactured using the metal plate 10 may have improved reliability, thereby preventing deformation, and also increasing life.

The iron may be included in the metal plate 10 by about 60% to about 65% by weight, and the nickel may be included by about 35% to about 40% by weight. In detail, the metal plate 10 may contain about 63.5 wt% to about 64.5 wt% of the iron, and the nickel may contain about 35.5 wt% to about 36.5 wt%. In addition, the metal plate 10 is carbon (C), silicon (Si), sulfur (S), phosphorus (P), manganese (Mn), titanium (Ti), cobalt (Co), copper (Cu), silver ( Ag), vanadium (V), niobium (Nb), indium (In), antimony (Sb) at least one or more elements of about 1% by weight or less may be further included. The component, content, and weight% of the metal plate 10 are selected specimens (a *) corresponding to the thickness (t) of the metal plate 10 by selecting a specific area (a * b) on the plane of the metal plate 10 b * t) can be identified by using a method of sampling and dissolving it in strong acids to investigate the weight percent of each component. However, the embodiment is not limited thereto, and the composition may be investigated by weight percent in various ways to confirm the composition of the metal plate.

The metal plate 10 may be manufactured by a cold rolling method. For example, the metal plate 10 may be formed through melting, forging, hot rolling, normalizing, primary cold rolling, primary annealing, secondary cold rolling, and secondary annealing processes, and about 30 μm through the processes. It may have the following thickness. Alternatively, the metal plate 10 may have a thickness of about 30 μm or less through an additional thickness reduction process after the process.

In addition, the step of preparing the metal plate 10 (S410) may further include a step of reducing the thickness according to the thickness of the target metal plate 10. The step of reducing the thickness may be a step of reducing the thickness by rolling and / or etching the metal plate 10.

For example, a metal plate 10 having a thickness of about 30 μm may be required to manufacture a deposition mask for realizing a resolution of 400 PPI or more, and about 20 μm for manufacturing a deposition mask for realizing a resolution of 500 PPI or more. A metal plate 10 having a thickness of about 30 μm may be required, and a metal plate 10 having a thickness of about 15 μm to about 20 μm may be required to manufacture a deposition mask capable of realizing a resolution of 800 PPI or more.

In addition, the step of preparing the metal plate 10 may optionally further include a surface treatment step. In detail, a nickel alloy such as Invar may have a high etch rate at the beginning of etching, so that the etch factor of each small hole V1 of each through hole may be reduced. In addition, when etching for forming the through hole V2, the photoresist layer for forming the large hole V2 may be peeled off by side etching of the etching solution. Accordingly, it may be difficult to form a through hole having a fine size, and it is difficult to uniformly form the through hole, and manufacturing yield may decrease.

Accordingly, a surface treatment layer for surface modification having different components, content, crystal structure and corrosion rate may be disposed on the surface of the metal plate 10. Here, surface modification may mean a layer made of various materials disposed on a surface in order to improve an etching factor.

That is, the surface treatment layer is a layer for preventing fast etching on the surface of the metal plate 10 and may be a barrier layer having a slower etching rate than the metal plate 10. The surface treatment layer may have a different crystal surface and crystal structure from the metal plate 10. For example, as the surface treatment layer includes different elements from the metal plate 10, a crystal surface and a crystal structure may be different from each other.

For example, in the same corrosion environment, the surface treatment layer may have a different corrosion potential from the metal plate 10. For example, when the same etching solution at the same temperature is treated for the same time, the surface treatment layer may have a different corrosion current or corrosion potential from the metal plate 10.

The metal plate 10 may include a surface treatment layer or a surface treatment portion on one side and / or both sides, the entire area, and / or the effective area. The surface treatment layer to the surface treatment part may include elements different from the metal plate 10 or metal elements having a slow corrosion rate in a larger content than the metal plate 10.

Subsequently, a step of forming a through hole TH by arranging a photoresist layer on the metal plate 10 may be performed.

To this end, a first photoresist layer PR1 may be disposed on one surface of the metal plate 10 to form a small hole V1 of a through hole on one surface of the metal plate 10. The first photoresist layer PR1 may be exposed and developed to form a patterned first photoresist layer PR1 on one surface of the metal plate 10. That is, a first photoresist layer PR1 including an open portion may be formed on one surface of the metal plate. In addition, an etch-stop layer such as a coating layer or a film layer for blocking etch may be disposed on the other surface opposite to one surface of the metal plate 10.

Subsequently, the opening of the patterned first photoresist layer PR1 may be half-etched to form a first groove on one surface of the metal plate 10. The open portion of the first photoresist layer PR1 may be exposed to an etchant or the like, and etching may occur in an open portion of the metal plate 10 where the first photoresist layer PR1 is not disposed.

The forming of the first groove may be a step of etching the metal plate 10 having a thickness of about 20 μm to about 30 μm until the thickness is about 1/2. The depth of the first groove formed through this step may be about 10 μm to 15 μm. That is, the thickness of the metal plate measured at the center of the first groove formed after this step may be about 10 μm to about 15 μm.

The step of forming the first groove (S430) may be a step of forming the groove by anisotropic etching or a semi-additive process (SAP). In detail, an anisotropic etching or semi-addition method may be used to half etch the open portion of the first photoresist layer PR1. Accordingly, the first groove formed through the half etching may have an etching rate in the depth direction (b direction) faster than that of the side etching (a direction) than isotropic etching.

An etching factor of the small surface hole V1 may be 2.0 to 3.0. For example, the etching factor of the small-sided hole V1 may be 2.1 to 3.0. For example, the etching factor of the small-sided hole V1 may be 2.2 to 3.0. Here, the etching factor is the depth of the etched small hole (B) / width of the photoresist layer extending from the island portion (IS) on the small hole protruding toward the center of the through hole (TH) (A) (Etching Factor = B / A). The A represents an average value of the width of one side of the photoresist layer protruding on the one surface hole and the width of the other side opposite to the one side.

Subsequently, a second photoresist layer PR2 may be disposed on the other surface of the metal plate 10. Subsequently, the second photoresist layer PR2 may be exposed and developed to pattern the second photoresist layer PR2 on the other surface of the metal plate 10 (S440). In addition, an etch-stop layer such as a coating layer or a film layer for blocking etch may be disposed on one surface of the metal plate 10.

Since the open portion of the second photoresist layer PR2 may be exposed to an etchant or the like, etching may occur in an open portion of the other surface of the metal plate 10 where the second photoresist layer PR2 is not disposed. The other surface of the metal plate 10 may be etched by anisotropic etching or isotropic etching.

As the open portion of the second photoresist layer PR2 is etched, the first groove on one surface of the metal plate 10 may be connected to the large surface hole V2 to form a through hole.

In the forming of the through hole, after forming the first groove for forming the small face hole V1, the step of forming the second groove for forming the large face hole V2 proceeds and the through hole ( TH).

Alternatively, forming the through hole TH may include forming a first groove for forming the small face hole V1 after forming a second groove for forming the large face hole V2. Proceeding may be a step of forming the through hole TH.

Alternatively, the forming of the through hole TH may include forming a first groove for forming the small face hole V1 and forming a second groove for forming the large face hole V2. At the same time, it may be a step of simultaneously forming the through hole TH.

Next, by removing the first photoresist layer PR1 and the second photoresist layer PR2, the large-surface hole V2 formed on the one surface, the small-surface hole V1 formed on the other surface opposite to the one surface ), The deposition mask (100) through the step of forming a deposition mask (100) comprising a through hole (TH) formed by a communication portion to which the boundary between the large hole (V2) and the small hole (V1) is connected. 100) may be formed.

The deposition mask 100 formed through the above steps may include the same material as the metal plate 10. For example, the deposition mask 100 may include a material having the same composition as the metal plate 10. In addition, the island portion (IS) of the deposition mask 100 may indicate the above-described surface treatment layer.

The deposition mask 100 formed through the above steps may have a maximum thickness at the center of the first rib RB1 formed in the effective portion AA less than a maximum thickness at the non-effective portion UA that has not undergone etching. For example, the maximum thickness at the center of the first rib RB1 may be about 15 μm. For example, the maximum thickness at the center of the first rib RB1 may be less than about 10 μm. However, the maximum thickness in the non-effective portion UA of the deposition mask 100 may be about 20 μm to about 30 μm, and may be about 15 μm to about 25 μm. That is, the maximum thickness in the non-effective portion UA of the deposition mask 100 may correspond to the thickness of the metal plate 10 prepared in the step of preparing the metal plate 10.

17 and 18 are diagrams illustrating deposition patterns formed through a deposition mask according to an embodiment.

Referring to FIG. 17, the deposition mask 100 according to the embodiment may have a height H1 between one side and a communication portion of the deposition mask 100 in which the small hole V1 is formed may be about 3.5 μm or less. For example, the height H1 may be about 0.1 μm to about 3.4 μm. For example, the height H1 may be about 0.5 μm to about 3.2 μm. For example, the height H1 may be about 1 μm to about 3 μm.

Accordingly, the distance between one surface of the deposition mask 100 and the substrate on which the deposition pattern is disposed may be close, thereby reducing deposition defects due to the shadow effect. For example, when the R, G, and B patterns are formed using the deposition mask 100 according to the embodiment, defects in which different deposition materials are deposited in an area between two adjacent patterns may be prevented. In detail, as illustrated in FIG. 18, when the patterns are formed in the order of R, G, and B from the left, R patterns and G patterns are prevented from being deposited with a shadow effect in the region between the R patterns and the G patterns. You can.

In addition, the deposition mask 100 according to the embodiment may reduce the size of the island portion IS in the effective portion. In detail, the area of the upper surface of the island portion IS, which is a non-etched surface, can be reduced, so that the organic material can easily pass through the through hole TH when depositing organic material, thereby improving deposition efficiency.

In addition, the area of the island portion IS may decrease from the center of the effective portions AA1, AA2, AA3 toward the non-effective portion UA. Accordingly, organic materials can be smoothly supplied to the through-holes located at the edges of the effective portions AA1, AA2, and AA3, thereby improving deposition efficiency and improving the quality of the deposition pattern.

Features, structures, effects, and the like described in the above-described embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, features, structures, effects, and the like exemplified in each embodiment may be combined or modified for other embodiments by a person having ordinary knowledge in the field to which the embodiments belong. Therefore, the contents related to such combinations and modifications should be interpreted as being included in the scope of the present invention.

In addition, although the embodiments have been mainly described above, this is merely an example and does not limit the present invention, and those skilled in the art to which the present invention pertains are exemplified in the above without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be implemented by modification. And differences related to these modifications and applications should be construed as being included in the scope of the invention defined in the appended claims.

Claims (12)

In the mask for deposition of a metal material for the OLED pixel deposition,
The deposition mask includes a deposition portion and a non-deposition portion,
The deposition portion includes a plurality of ineffective portions between the effective portion and the effective portion,
The effective portion has a plurality of small surface holes formed on one surface of the metal material;
A plurality of face holes formed on the other surface opposite to the one surface of the metal material;
A plurality of through holes communicating with the small face hole and the large face hole, respectively; And
An island portion formed on the other surface of the metal material and positioned between the plurality of through holes; And
Between the island portion includes a rib,
The height of the island portion is greater than the height of the rib,
In a cross section in the longitudinal direction of the face hole, in a cross section in a width direction perpendicular to the longitudinal direction of the face hole and a first inclination angle connecting one end and the other end of the face hole with respect to the one surface, with respect to the one surface The second inclination angle connecting the one end and the other end of the large hole is a deposition mask having a range of 35 ° to 55 °. According to claim 1,
The first tilt angle is a deposition mask different from the second tilt angle. According to claim 2,
The second tilt angle is less than the first tilt angle deposition mask. According to claim 1,
The rib,
A first rib located between the first through hole and the second through hole adjacent in the longitudinal direction among the plurality of through holes; And
And a second rib positioned between the first through hole and the third through hole adjacent in the width direction among the plurality of through holes,
The distance from the center of the first through hole to the center of the first rib is greater than the distance from the center of the first through hole to the center of the second rib. The deposition mask according to claim 4, wherein a height of the center of the first rib is different from a height of the center of the second rib. According to claim 1,
The said small hole has a different height in a cross section in the longitudinal direction and a height in a cross section in the width direction.
Deposition mask. The method of claim 6,
The height of the small surface hole in the cross section in the longitudinal direction is smaller than the height of the small surface hole in the cross section in the width direction. The height of the small surface hole in the cross section in the longitudinal direction is 2.5 µm to 3.0 µm.
The height of the small surface hole in the cross section in the width direction is 3.5 μm to 4.0 μm. The deposition mask according to claim 1, wherein an interval between the centers of the plurality of through holes is 48 μm or less. The deposition mask according to claim 1, wherein the through-hole has a diameter in the longitudinal direction or a diameter in the width direction of 33 μm or less. The deposition mask of claim 1, wherein the through hole has a circular shape or an oval shape. The deposition mask of claim 1, wherein the longitudinal direction is a tensile direction, and the width direction is a direction perpendicular to the tensile direction.

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