KR20230163964A - A deposition mask - Google Patents

Abstract

An embodiment is a mask for deposition of a metal material for OLED pixel deposition, wherein the deposition mask includes a plurality of effective portions for deposition and non-effective portions other than the effective portion, and the effective portions are spaced apart in the longitudinal direction. disposed and includes a plurality of effective areas disposed at the center of the effective portion and an outer area surrounding each of the plurality of effective areas, the effective area comprising a plurality of first carding holes formed on one surface, the one surface, and A plurality of first facing holes formed on opposite surfaces, a plurality of first through holes communicating with the first carding holes and the first facing holes, and a first formed between the first through holes. An island portion; and the outer area includes a plurality of second carding holes formed on one side, a plurality of second facing holes formed on the other side opposite to the one side, and the second carding holes. and a plurality of second through holes communicating with the second facing holes, and a second island portion formed between the second through holes, wherein the second through holes are arranged surrounding the effective area. and has a smaller size than the first through hole.

Description

Deposition mask {A DEPOSITION MASK}

The present invention relates to a mask for deposition and a method of manufacturing the same.

Display devices are applied and used in various devices. For example, display devices are used not only in small devices such as smartphones and tablet PCs, but also in large devices such as TVs, monitors, and public displays (PDs). In particular, recently, demand for ultra-high resolution (UHD) of 500 PPI (Pixel Per Inch) or higher is increasing, and high-resolution display devices are being applied to small and large devices. Accordingly, interest in technologies for low-power and high-resolution implementation is increasing.

Commonly used display devices can be largely divided into LCD (Liquid Crystal Display) and OLED (Organic Light Emitting Diode) depending on the driving method.

LCD is a display device driven using liquid crystal. It has a structure in which a light source including a CCFL (Cold Cathode Fluorescent Lamp) or LED (Light Emitting Diode) is placed below the liquid crystal, and on the light source. It is a display device that is driven by controlling the amount of light emitted from the light source using the liquid crystal disposed.

In addition, OLED is a display device driven using an organic material. It does not require a separate light source, and the organic material itself acts as a light source and can be driven with low power. In addition, OLED is attracting attention as a display device that can replace LCD because it can express infinite contrast ratio, has a response speed about 1,000 times faster than LCD, and has an excellent viewing angle.

In particular, in OLED, the organic material included in the light-emitting layer can be deposited on the substrate by a deposition mask called a fine metal mask (FMM), and the deposited organic material corresponds to the pattern formed on the deposition mask. It is formed in a pattern and can play the role of a pixel. The deposition mask is generally manufactured from an Invar alloy metal plate containing iron (Fe) and nickel (Ni). At this time, a through hole penetrating through the one side and the other side of the metal plate may be formed, and the through hole may be formed at a position corresponding to the pixel pattern. Accordingly, organic materials such as red, green, and blue can pass through the through-hole of the metal plate and be deposited on the substrate, and a pixel pattern can be formed on the substrate.

The deposition mask as described above may include an effective portion of the deposition area and an ineffective portion excluding the effective portion. Additionally, the effective portion may include an effective area disposed in the center and an outer area surrounding the effective area. The non-effective part is a peripheral area of the outer area of the effective part.

At this time, the through hole is not formed in the non-effective part of the deposition mask, and the through hole is formed only in the effective area and the outer area.

Meanwhile, the through holes of the above deposition mask are formed by an etching solution. At this time, a phenomenon in which radicals are concentrated during an etching process using the etchant occurs in an outer region located adjacent to the non-effective portion where the through hole is not formed.

And, as the radicals are concentrated, the through hole formed in the outer area is formed larger than the target size. As the size of the through hole formed in the outer region becomes larger than the target size, not only does the size of the island portion formed on the outer region decrease, but the thickness of the rib connecting the through hole between the through holes also becomes thinner.

Accordingly, when the through holes formed in the deposition mask are patterned to have the same size, there is a problem in that the pore diameters of the through holes are non-uniform due to overetching in the outer region, which may lower pattern deposition efficiency and cause deposition defects. It can happen.

Additionally, as the size of the island portion in the outer region decreases and the thickness of the rib decreases, the overall strength of the deposition mask may weaken. Because of this, in the OLED panel manufacturing process, when the deposition mask is stretched and welded to the mask frame, there is a problem that the effective area of the effective part and the outer area are separated.

Therefore, a new deposition mask and its manufacturing method are required to solve the above problems.

In an embodiment of the present invention, an object is to provide a deposition mask and a manufacturing method thereof that can prevent overetching occurring in the outer area of the deposition mask.

In addition, an embodiment of the present invention seeks to provide a deposition mask and a manufacturing method thereof that can prevent over-etching that occurs between an ineffective portion where etching is not in progress and an effective portion where etching is in progress.

In addition, an embodiment of the present invention seeks to provide a deposition mask that can increase the strength of a rib connecting a through hole in the outer area and a through hole in the effective area in the deposition mask and a method of manufacturing the same.

In addition, an embodiment of the present invention seeks to provide a deposition mask that does not include a non-etched area in an effective area including an effective area and an outer area, and a method of manufacturing the same.

The technical challenges to be achieved in the proposed embodiment are not limited to the technical challenges mentioned above, and other technical challenges not mentioned are clear to those skilled in the art from the description below. It will be understandable.

An embodiment is a mask for deposition of a metal material for OLED pixel deposition, wherein the deposition mask includes a plurality of effective portions for deposition and non-effective portions other than the effective portion, and the effective portions are spaced apart in the longitudinal direction. disposed and includes a plurality of effective areas disposed at the center of the effective portion and an outer area surrounding each of the plurality of effective areas, the effective area comprising a plurality of first carding holes formed on one surface, the one surface, and A plurality of first facing holes formed on opposite surfaces, a plurality of first through holes communicating with the first carding holes and the first facing holes, and a first formed between the first through holes. An island portion; and the outer area includes a plurality of second carding holes formed on one side, a plurality of second facing holes formed on the other side opposite to the one side, and the second carding holes. and a plurality of second through holes communicating with the second facing holes, and a second island portion formed between the second through holes, wherein the second through holes are arranged surrounding the effective area. and has a smaller size than the first through hole.

Additionally, the method of claim 1, wherein the distance between the centers of the second through holes is greater than the distance between the centers of the first through holes.

Additionally, the first aperture ratio of the first through hole in the effective area is greater than the second aperture ratio of the second through hole in the outer area.

Additionally, the area of the first island portion is smaller than the area of the second island portion.

Additionally, the effective area includes a first rib formed by contacting first facing holes of the first through holes, and the outer area includes a first rib formed by contacting second facing holes of the second through holes. It includes two ribs, and the thickness of the second rib is smaller than the thickness of the non-deposition region and larger than the thickness of the first rib.

In addition, at the boundary between the effective area and the outer area, it further includes a third rib formed by contacting the first facing hole of the first through hole and the second facing hole of the second through hole, and the thickness of the third rib is is smaller than the thickness of the non-deposited area.

Additionally, the thickness of the third rib is larger than the thickness of the second rib and smaller than the thickness of the third rib.

In addition, it further includes a third island portion located between the first through hole and the second through hole at the boundary between the effective area and the outer area, and the top surface area of the third island portion is equal to that of the first island portion. It is larger than the top surface area and smaller than the top surface area of the second island portion.

In addition, the third island unit includes a first sub-third island unit located on the effective area, a second sub-third island unit located on the outer area, and an upper surface of the first sub-third island unit. The area is smaller than the top surface area of the second sub-third island portion.

In addition, the outer area includes a first outer area located adjacent to the effective area and surrounding the effective area, and a second outer area located adjacent to the non-effective area and surrounding the first outer area. It includes, wherein the second through hole is located on the first outer region, and the second outer region includes a plurality of third carding holes formed on one side, and a plurality of third carding holes formed on the other side opposite to the one side. A plurality of third facing holes, a plurality of third through holes communicating with the plurality of third small holes and the third facing holes, and a fourth island portion formed between the third through holes. And, the second through hole has a size smaller than the first through hole and larger than the third through hole.

Additionally, the second outer region further includes a plurality of half-named portions located at the outermost portion of the second outer region and including a plurality of fourth facing holes formed on the other surface.

Additionally, no through hole is located within the non-effective portion.

An embodiment is a method of manufacturing a deposition mask for OLED pixel deposition, an effective part and an analogy other than the effective part for forming a deposition pattern including a plurality of effective areas and an outer area surrounding the effective area. Preparing a metal plate containing yeast; Disposing a first photoresist layer on one surface of the metal plate and patterning the first photoresist layer; forming a first groove on one surface of the deposition area of the metal plate by half-etching a first open portion of the patterned first photoresist layer; A second photoresist layer is disposed on the other side opposite to one side of the metal plate, a second open portion having a first width on the effective area, and a third open portion having a second width smaller than the first width on the outer area. patterning the second photoresist layer to have open portions; Half-etching the second and third open portions of the patterned second photoresist layer to form second grooves and third grooves, a first through hole communicating with the first groove and the second groove, and forming a second through hole communicating with the first groove and the third groove; and removing the first photoresist layer and the second photoresist layer to form a first through hole disposed on the effective area of the effective portion and a second through hole disposed on the outer region of the effective portion. and forming a deposition mask, wherein the second through hole has a smaller size than the first through hole and is located surrounding the effective area where the first through hole is located.

Additionally, no through hole is located in the non-effective portion of the deposition mask.

In addition, forming the deposition mask includes forming a rib in contact with the second groove of the first through hole and the third groove of the second through hole at the boundary between the effective area and the outer area. It includes, and the rib has a thickness smaller than the thickness of the non-deposition area.

According to an embodiment according to the present invention, a mask pattern having a uniform pore diameter can be formed on a deposition mask.

In addition, according to an embodiment according to the present invention, when reducing the through-hole size in the outer area compared to the through-hole size in the effective area located at the center of the effective part of the deposition mask, during tension welding before deposition during the manufacturing process of the OLED panel, It is possible to solve the phenomenon of the active part being separated from the non-active part and falling off the deposition mask.

Additionally, according to an embodiment of the present invention, no through hole is located in a non-effective part that is not involved in deposition. Accordingly, it is possible to secure a volume capable of increasing the rigidity of the deposition mask on the non-effective portion.

In addition, according to an embodiment according to the present invention, the outer area of the effective part is arranged to surround the upper and lower sides as well as the left and right sides of the effective area located in the center of the effective part. Accordingly, the through hole of the outer area is located around the left, right, upper, and lower sides of the effective area. Additionally, according to an embodiment of the present invention, a through hole in the outer area and a through hole in the effective area are connected through one rib. At this time, the thickness of the rib is smaller than the thickness of the metal plate that is the raw material. That is, there is no non-etched area in the effective part including the effective area and the outer area. Accordingly, the present invention can solve the radical concentration problem that occurs between the etched area and the non-etched area in the deposition mask. Therefore, the deposition mask according to the embodiment can have more precise and uniform through holes, and can uniformly deposit OLED pixel patterns with a resolution of 400 PPI or more, a detailed high resolution of 500 PPI or more, and even an ultra-high resolution of 800 PPI or more.

1 to 3 are conceptual diagrams for explaining a process for depositing an organic material on a substrate using a deposition mask according to an embodiment.
FIG. 4 is a plan view of a deposition mask according to an embodiment.
FIG. 5 is a plan view showing the effective area and outer area of the effective portion of the deposition mask according to the first embodiment.
FIG. 6 is a microscope image of the effective area of the deposition mask of FIG. 5 viewed from a plane.
Figure 7 is a diagram showing another plan view of a deposition mask according to an embodiment.
Figure 8 is a diagram showing another plan view of a deposition mask according to an embodiment.
FIG. 9 is a view showing the cross-sectional view taken along line A-A' and the cross-sectional view taken along line B-B' of FIG. 5 overlaid.
FIG. 10 is a cross-sectional view taken in the BB' direction of FIG. 5.
FIG. 11 is a plan view of an effective area and an outer area of a deposition mask according to a second embodiment.
FIG. 12 is a plan view of an effective area and an outer area of a deposition mask according to a third embodiment.
13 and 14 are diagrams showing a method of manufacturing a deposition mask according to an embodiment.
15 and 16 are diagrams showing deposition patterns formed through a deposition mask according to an embodiment.

Hereinafter, the configuration and operation according to the present invention will be described in detail with reference to the attached drawings. In the description with reference to the accompanying drawings, identical components will be given the same reference regardless of their reference numerals, and redundant description thereof will be omitted. Terms such as first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The above terms are used only for the purpose of distinguishing one component from another.

In addition, in the description of the embodiments, each layer (film), region, pattern or structure is “on” or “below/below” the substrate, each layer (film), region, pad or pattern. The description of being formed “under” includes being formed directly or through another layer. The standards for top/top or bottom/bottom of each floor are explained based on the drawing.

Additionally, when a part is said to be “connected” to another part, this includes not only cases where it is “directly connected,” but also cases where it is “indirectly connected” with another member in between. Additionally, when a part is said to “include” a certain component, this does not mean that other components are excluded, but that other components can be added, unless specifically stated to the contrary.

A deposition mask according to an embodiment will be described below with reference to the drawings.

1 to 3 are conceptual diagrams for explaining a process of depositing an organic material on the substrate 300 using the deposition mask 100 according to an embodiment.

Figure 1 is a diagram showing an organic material deposition apparatus including a deposition mask 100 according to an embodiment, and Figure 2 is a diagram showing the deposition mask 100 according to an embodiment being stretched to be mounted on the mask frame 200. This is a drawing showing this. In addition, FIG. 3 is a diagram illustrating a plurality of deposition patterns being formed on the substrate 300 through a plurality of through holes of the deposition mask 100.

Referring to FIGS. 1 to 3 , the organic material deposition apparatus may include a deposition mask 100, a mask frame 200, a substrate 300, an organic material deposition container 400, and a vacuum chamber 500.

The deposition mask 100 may include metal. For example, the deposition mask may include iron (Fe) and nickel (Ni).

The deposition mask 100 may include a plurality of through holes (TH) in an effective portion for deposition. The deposition mask 100 may be a deposition mask substrate including a plurality of through holes (TH). At this time, the through hole may be formed to correspond to the pattern to be formed on the substrate. The through hole is formed not only in the effective area located in the center of the effective part, but also in an outer area located on the outside of the effective part and surrounding the effective area. The deposition mask 100 may include an inactive part other than the effective part including the deposition area. The through hole is not located in the non-effective part.

The mask frame 200 may include an opening. A plurality of through holes of the deposition mask 100 may be disposed in an area corresponding to the opening. Accordingly, the organic material supplied to the organic material deposition container 400 may be deposited on the substrate 300. The deposition mask 100 may be placed and fixed on the mask frame 200. For example, the deposition mask 100 may be stretched with a certain tensile force and fixed on the mask frame 200 by welding.

The deposition mask 100 may be stretched in opposite directions at edges disposed at the outermost edge of the deposition mask 100 . One end of the deposition mask 100 and the other end opposite to the one end may be pulled in opposite directions in the longitudinal direction of the deposition mask 100. One end and the other end of the deposition mask 100 may face each other and be arranged in parallel. One end of the deposition mask 100 may be one of the ends forming four sides disposed on the outermost side of the deposition mask 100. For example, the deposition mask 100 may be tensioned with a tensile force of about 0.1 kgf to about 2 kgf. In detail, the deposition mask may be fixed on the mask frame 200 by being stretched with a tensile force of 0.4 kgf to about 1.5 kgf. Accordingly, the stress of the deposition mask 100 can be reduced. However, the embodiment is not limited to this, and the deposition mask 100 may be fixed on the mask frame 200 by being stretched with various tensile forces that can reduce stress.

Subsequently, the deposition mask 100 can be fixed to the mask frame 200 by welding the non-effective portion of the deposition mask 100. Next, a portion of the deposition mask 100 disposed outside the mask frame 200 may be removed by a method such as cutting.

The substrate 300 may be a substrate used in manufacturing a display device. For example, the substrate 300 may be a substrate 300 for depositing organic materials for OLED pixel patterns. Organic patterns of red, green, and blue may be formed on the substrate 300 to form pixels of the three primary colors of light. That is, an RGB pattern may be formed on the substrate 300.

The organic material deposition vessel 400 may be a crucible. An organic material may be placed inside the crucible.

As a heat source and/or current is supplied to the crucible within the vacuum chamber 500, the organic material may be deposited on the substrate 100.

Referring to FIG. 3, the deposition mask 100 may include one side 101 and the other side 102 opposite to the one side.

The one side 101 of the deposition mask 100 may include a small hole (V1), and the other side may include a large hole (V2). For example, each of one side 101 and the other side 102 of the deposition mask 100 may include a plurality of small holes V1 and a plurality of large holes V2.

Additionally, the deposition mask 100 may include a through hole (TH). The through hole (TH) may be communicated through a communication portion where the boundary of the small hole (V1) and the large hole (V2) are connected.

Additionally, the deposition mask 100 may include a first etching surface ES1 within the small hole V1. The deposition mask 100 may include a second etching surface (ES2) within the facing hole (V2). The through hole TH may be formed by the first etching surface ES1 in the small hole V1 and the second etching surface ES2 in the large hole V2 communicating with each other. For example, the first etching surface ES1 in one small hole V1 may communicate with the second etching surface ES2 in one large hole V2 to form one through hole. Accordingly, the number of through holes (TH) may correspond to the number of small holes (V1) and large holes (V2).

The width of the large hole (V2) may be larger than the width of the small hole (V1). At this time, the width of the small hole V1 is measured on one side 101 of the deposition mask 100, and the width of the large hole V2 is measured on the other side 102 of the deposition mask 100. It can be.

The carding hole V1 may be disposed toward the substrate 300 . The carding hole V1 may be placed close to the substrate 300. Accordingly, the small hole V1 may have a shape corresponding to the deposition material, that is, the deposition pattern DP.

The facing hole V2 may be disposed toward the organic material deposition container 400 . Accordingly, the facing hole (V2) can accommodate the organic material supplied from the organic material deposition container 400 in a wide width, and the small hole (V1) whose width is smaller than the facing hole (V2) can accommodate the organic material supplied from the organic material deposition container 400. A fine pattern can be quickly formed on the substrate 300.

FIG. 4 is a plan view of a deposition mask 100 according to an embodiment. Referring to FIG. 4 , the deposition mask 100 will be described in more detail.

Referring to FIG. 4 , the deposition mask 100 according to an embodiment may include a deposition area (DA) and a non-deposition area (NDA).

The deposition area DA may be an area for forming a deposition pattern. Accordingly, the deposition area DA may include an effective portion forming a deposition pattern. The deposition area DA may include a patterned area and a non-patterned area. The pattern area may be an area including a small hole (V1), a large hole (V2), a through hole (TH), and an island (IS), and the non-pattern area may include a small hole (V1) and a large hole (V2). ), it may be an area that does not include a through hole (TH) and an island portion (IS). Here, the deposition area may include an effective part including an effective area and an outer area, which will be described later, and an ineffective part in which deposition does not proceed. Additionally, the effective portion may be referred to as the pattern area, and the non-effective portion may be referred to as the non-pattern area.

Additionally, one deposition mask 100 may include a plurality of deposition areas DA. For example, the deposition area DA in the embodiment may include a plurality of effective portions capable of forming a plurality of deposition patterns. In addition, each of the plurality of effective parts is located surrounding a plurality of effective areas (AA1, AA2, AA3) corresponding to the central area of the effective part, and a periphery of the plurality of effective areas (AA1, AA2, AA3). It may include a plurality of outer areas (OA1, OA2, OA3) disposed outside the effective portion.

The plurality of effective areas AA1, AA2, and AA3 may include a first effective area AA1, a second effective area AA2, and a third effective area AA3. Here, one deposition area DA may be a first effective portion including a first effective area AA1 and a first outer area OA1 surrounding the first effective area AA1. Additionally, one deposition area DA may be a second effective portion including a second effective area AA2 and a second outer area OA2 surrounding the second effective area AA2. Additionally, one deposition area DA may be a third effective portion including a third effective area AA3 and a third outer area OA3 surrounding the third effective area AA3.

In the case of a small display device such as a smartphone, the effective portion of any one of the plurality of deposition areas included in the deposition mask 100 may be used to form one display device. Accordingly, one deposition mask 100 may include a plurality of effective portions, allowing multiple display devices to be formed simultaneously. Therefore, the deposition mask 100 according to the embodiment can improve process efficiency.

Differently, in the case of a large display device such as a television, several effective portions included in one deposition mask 100 may be part of forming one display device. At this time, the plurality of effective parts may be used to prevent deformation due to the load of the mask.

The deposition area DA may include a plurality of separation areas IA1 and IA2 included in one deposition mask 100. Separation areas IA1 and IA2 may be disposed between adjacent effective parts. The separation areas (IA1, IA2) may be separation areas between a plurality of effective parts. For example, a first separation area (IA1) is disposed between the first outer area (OA1) of the first effective area (AA1) and the second outer area (OA2) of the second effective area (AA2). It can be. Additionally, a second isolation area (IA2) may be disposed between the second outer area (OA2) of the second effective area (AA2) and the third outer area (OA3) of the third effective area (AA3). there is. That is, adjacent effective parts can be distinguished from each other by the separation areas IA1 and IA2, and one deposition mask 100 can support a plurality of effective parts.

The deposition mask 100 may include non-deposition areas (NDA) on both sides of the deposition area (DA) in the longitudinal direction. The deposition mask 100 according to an embodiment may include the non-deposition area (NDA) on both sides of the deposition area (DA) in the horizontal direction.

The non-deposition area NDA of the deposition mask 100 may be an area not involved in deposition. The non-deposition area NDA may include frame fixing areas FA1 and FA2 for fixing the deposition mask 100 to the mask frame 200. Additionally, the non-deposition area NDA may include half-etched portions HF1 and HF2 and an open portion.

As described above, the deposition area DA may be an area for forming a deposition pattern, and the non-deposition area NDA may be an area not involved in deposition. At this time, a surface treatment layer different from the material of the metal plate 10 may be formed in the deposition area DA of the deposition mask 100, and a surface treatment layer in the non-deposition area NDA may not be formed. . Alternatively, a surface treatment layer made of a material different from that of the metal plate 10 may be formed on only one side 101 or the other side 102 of the deposition mask 100. Alternatively, a surface treatment layer made of a material different from that of the metal plate 10 may be formed only on a portion of one surface 101 of the deposition mask 100. For example, one side 101 and/or the other side 102 of the deposition mask 100, the entire and/or part of the deposition mask 100, is a surface treatment layer whose etching rate is slower than the material of the metal plate 10. It may include, and the etch factor may be improved. Accordingly, the deposition mask 100 of the embodiment can form fine-sized through holes with high efficiency. For example, the deposition mask 100 of the embodiment may have a resolution of 400 PPI or more. Specifically, the deposition mask 100 can form a deposition pattern with high resolution of 500 PPI or more with high efficiency. Here, the surface treatment layer may include an element different from the material of the metal plate 10, or may include a metal material with a different composition of the same element. This will be explained in more detail in the manufacturing process of the deposition mask described later.

The non-deposition area NDA may include half-etched portions HF1 and HF2. For example, the non-deposition area NDA of the deposition mask 100 may include a first half-etched portion HF1 on one side of the deposition area DA, and the deposition area DA A second half-etched portion HF2 may be included on the other side opposite to the one side. The first half-etched portion HF1 and the second half-etched portion HF2 may be areas where grooves are formed in the depth direction of the deposition mask 100 . The first half-etched portion HF1 and the second half-etched portion HF2 may have grooves about half the thickness of the deposition mask, thereby dispersing stress when the deposition mask 100 is stretched. there is. In addition, the half-etched portions HF1 and HF2 are preferably formed to be symmetrical in the X-axis direction or symmetrical in the Y-axis direction with respect to the center of the deposition mask 100. This allows the tension in both directions to be uniformly adjusted.

The half-etched portions HF1 and HF2 may be formed in various shapes. The half-etched portions HF1 and HF2 may include semicircular grooves. The groove may be formed on at least one of the one surface 101 of the deposition mask 100 and the other surface 102 opposite to the one surface 101. Preferably, the half-etched portions HF1 and HF2 may be formed on a surface corresponding to the small hole V1. Accordingly, the half-etched portions HF1 and HF2 can be formed simultaneously with the small hole V1, thereby improving process efficiency. Additionally, the half-etched portions HF1 and HF2 can disperse stress that may occur due to a size difference between the face holes V2. However, the embodiment is not limited to this, and the half-etched portions HF1 and HF2 may have a rectangular shape. For example, the first half-etched portion HF1 and the second half-etched portion HF2 may have a rectangular or square shape. Accordingly, the deposition mask 100 can effectively disperse stress.

Additionally, the half-etched portions HF1 and HF2 may include curved surfaces and flat surfaces. A plane of the first half-etched portion HF1 may be disposed adjacent to the first effective area AA1, and the plane may be disposed horizontally with an end of the deposition mask 100 in the longitudinal direction. The curved surface of the first half-etched portion HF1 may be convex toward one end of the deposition mask 100 in the longitudinal direction. For example, the curved surface of the first half-etched portion HF1 may be formed such that a point at half the vertical length of the deposition mask 100 corresponds to a semicircular radius.

Additionally, the plane of the second half-etched portion HF2 may be disposed adjacent to the third effective area AA3, and the plane may be disposed horizontally with the longitudinal end of the deposition mask 100. there is. The curved surface of the second half-etched portion HF2 may be convex toward the other end of the deposition mask 100 in the longitudinal direction. For example, the curved surface of the second half-etched portion HF2 may be formed such that a point at half the vertical length of the deposition mask 100 corresponds to a semicircular radius.

The half-etched portions HF1 and HF2 may be formed at the same time as the small hole V1 or the large hole V2. This can improve process efficiency. Additionally, grooves formed on one side 101 and the other side 102 of the deposition mask 100 may be formed to be offset from each other. Through this, the half-etched portions HF1 and HF2 may not penetrate.

Additionally, the deposition mask 100 according to the embodiment may include four half-etched portions. For example, the half-etched portions HF1 and HF2 may include an even number of half-etched portions HF1 and HF2, so that stress can be distributed more efficiently.

Additionally, the half-etched portions HF1 and HF2 may be further formed in the non-effective portion UA of the deposition area DA. For example, a plurality of half-etched portions HF1 and HF2 may be distributed over all or part of the non-effective portion UA to distribute stress when the deposition mask 100 is stretched.

Additionally, the half-etched portions HF1 and HF2 may be formed in the frame fixing areas FA1 and FA2 and/or in the surrounding areas of the frame fixing areas FA1 and FA2. Accordingly, the deposition mask 100 generated when fixing the deposition mask 100 to the mask frame 200 and/or depositing the deposition material after fixing the deposition mask 100 to the mask frame 200 ) can be distributed evenly. Accordingly, the deposition mask 100 can be maintained to have uniform through holes.

That is, the deposition mask 100 according to the embodiment may include a plurality of half-etched portions. In detail, the deposition mask 100 according to the embodiment is shown to include half-etching portions HF1 and HF2 only in the non-deposition area NDA, but is not limited thereto and includes the deposition area DA and the non-deposition area ( At least one region of the NDA) may further include a plurality of half-etched portions. Accordingly, the stress of the deposition mask 100 can be uniformly distributed.

The non-deposition area NDA may include frame fixing areas FA1 and FA2 for fixing the deposition mask 100 to the mask frame 200. For example, it may include a first frame fixing area (FA1) on one side of the deposition area (DA), and a second frame fixing area (FA2) on the other side of the deposition area (DA) opposite to the one side. It can be included. The first frame fixing area FA1 and the second frame fixing area FA2 may be areas fixed to the mask frame 200 by welding.

The frame fixing areas FA1 and FA2 are disposed between the half-etched portions HF1 and HF2 of the non-deposited area NDA and the effective portion of the deposition area DA adjacent to the half-etched portions HF1 and HF2. It can be. For example, the first frame fixing area FA1 includes the first half-etched part HF1 of the non-deposited area NDA and the first half-etched part HF1 of the deposition area DA adjacent to the first half-etched part HF1. It may be disposed between the first effective area including the first effective area AA1 and the first outer area OA1. For example, the second frame fixing area FA2 includes the second half-etched part HF2 of the non-deposited area NDA and the second half-etched part HF2 of the deposition area DA adjacent to the second half-etched part HF2. It may be disposed between the third effective area including the third effective area AA3 and the third outer area OA3. Accordingly, a plurality of deposition pattern parts can be fixed simultaneously.

Additionally, the deposition mask 100 may include semicircular open portions at both ends in the horizontal direction (X). For example, the non-deposition area NDA may include an open portion. In detail, the non-deposition area NDA may include a semicircular open portion at both ends in the horizontal direction. For example, the non-deposition area NDA of the deposition mask 100 may include an open portion whose center in the vertical direction (Y) is open on one side in the horizontal direction. For example, the non-deposition area NDA of the deposition mask 100 may include an open portion with an open center in the vertical direction on the other side opposite to the one side in the horizontal direction. That is, both ends of the deposition mask 100 may include open portions at 1/2 of the vertical length. For example, both ends of the deposition mask 100 may have a horseshoe-like shape.

At this time, the curved surface of the open portion may face the half-etched portions HF1 and HF2. Accordingly, the open portions located at both ends of the deposition mask 100 are the vertical length of the first half-etched portions (HF1, HF2) or the second half-etched portions (HF1, HF2) and the deposition mask 100. The separation distance may be the shortest at 1/2 of the point.

Additionally, the vertical length h2 of the open portion may correspond to the vertical length h1 of the first half-etched portion HF1 or the second half-etched portion HF2. Accordingly, when the deposition mask 100 is stretched, stress can be distributed evenly, thereby reducing wave deformation of the deposition mask. Accordingly, the deposition mask 100 according to the embodiment may have uniform through holes, and the deposition efficiency of the pattern may be improved. Preferably, the vertical length (h1) of the first half-etched portion (HF1) or the second half-etched portion (HF2) is about 80% to about 200% of the vertical length (h2) of the open portion. (h1:h2 = 0.8~2:1). The vertical length (h1) of the first half-etched portion (HF1) or the second half-etched portion (HF2) may be about 90% to about 150% of the vertical length (h2) of the open portion ( h1:h2 = 0.9~1.5:1). The vertical length h1 of the first half-etched portion HF1 or the second half-etched portion HF2 may be about 95% to about 110% of the vertical length h2 of the open portion ( h1:h2 = 0.95~1.1:1).

In addition, although not shown in the drawing, the half-etched portion may be further formed in the non-effective portion (UA) of the deposition area (DA). A plurality of half-etched portions may be distributed over all or part of the non-effective portion (UA) to distribute stress when the deposition mask 100 is stretched.

Additionally, the half-etched portions HF1 and HF2 may be formed in the frame fixing areas FA1 and FA2 and/or in the surrounding areas of the frame fixing areas FA1 and FA2. Accordingly, the stress of the deposition mask 100 that occurs when fixing the deposition mask 100 to the mask frame 200 and/or depositing a deposition material after fixing the deposition mask 100 to the frame is reduced. It can be distributed evenly. Accordingly, the deposition mask 100 can be maintained to have uniform through holes.

The deposition mask 100 may include a plurality of effective parts spaced apart in the longitudinal direction and an unactive part (UA) other than the effective part. In detail, the deposition area DA may include a plurality of active parts and an unactive part UA other than the effective part. Additionally, the plurality of effective parts may include a first effective part, a second effective part, and a third effective part. Additionally, the first effective portion may include a first effective area AA1 and a first outer area OA1 surrounding the first effective area AA1. The second effective portion may include a second effective area AA2 and a second outer area OA2 surrounding the second effective area AA2. The third effective portion may include a third effective area AA3 and a third outer area OA3 surrounding the third effective area AA3. The effective areas (AA1, AA2, AA3) within the plurality of effective portions include a plurality of first small-sided holes (V1-1) formed on one side of the deposition mask 100 and a plurality of first small holes (V1-1) formed on the other side opposite to the one side. A plurality of first through holes formed by a first facing hole (V1-2), a communication portion (CA) where the boundaries of the first small hole (V1-1) and the facing hole (V1-2) are connected. (TH1) may be included.

Additionally, the effective areas AA1, AA2, and AA3 may include a plurality of first islands IS1 supporting between the plurality of first through holes TH1.

The first island IS1 may be located between adjacent first through holes TH1 among the plurality of first through holes TH1. That is, an area other than the first through hole TH1 in the effective areas AA1, AA2, and AA3 of the deposition mask 100 may be the first island IS1.

The first island portion IS1 may refer to an unetched portion of one side 101 or the other side 102 of the effective portion of the deposition mask. In detail, the first island portion IS1 has a first through hole TH1 and a first through hole ( It may be an unetched area between TH1). Accordingly, the first island portion IS1 may be arranged parallel to one surface 101 of the deposition mask 100. In detail, the upper surface of the first island portion IS1 may be arranged parallel to the one surface 101.

The first island portion IS1 may be disposed on the same plane as the other surface 102 of the deposition mask 100. Accordingly, the first island portion IS1 may have the same thickness as at least a portion of the non-effective portion on the other surface 102 of the deposition mask 100. In detail, the first island portion IS1 may have the same thickness as an unetched portion of the non-effective portion on the other surface 102 of the deposition mask 100. Accordingly, deposition uniformity of subpixels can be improved through the deposition mask 100.

Alternatively, the first island portion IS may be disposed on a plane parallel to the other surface 102 of the deposition mask 100. Here, the parallel plane refers to the other side of the deposition mask 100 on which the first island portion IS1 is disposed by an etching process around the first island portion IS1 and the non-etched deposition mask among the non-effective portions. (100) may have a height difference of ±1 ㎛ or less on the other surface.

The deposition mask 100 is arranged to surround the effective areas AA1, AA2, and AA3, and may include outer areas OA1, OA2, and OA3 arranged outside the effective area. The effective area AA may be an inner area when the outer edges of the outermost first through holes for depositing organic materials among the plurality of first through holes are connected. The outer area (OA1, OA2, OA3) may be an outer area when the outermost first through holes for depositing an organic material among the plurality of first through holes are connected. In addition, the non-effective area (UA) may be an outer area when the outermost second through-holes for depositing organic materials among the second through-holes of the outer areas (OA1, OA2, OA3) are connected. there is.

The non-effective area (UA) is an area excluding the effective area (AA1, AA2, AA3) and outer area (OA1, OA2, OA3) of the deposition area (DA) and the non-deposition area (NDA).

The number of outer areas (OA1, OA2, and OA3) may correspond to the number of effective areas (AA1, AA2, and AA3). That is, one effective part may include one outer area spaced at a certain distance from the end of the effective area in the horizontal and vertical directions, respectively.

The first effective area AA1 may be located within the first outer area OA1. The first effective area AA1 may include a plurality of second through holes TH2 for forming a deposition material. The first outer area OA1 surrounding the first effective area AA1 may include a plurality of second through holes TH2.

For example, the plurality of second through holes TH2 included in the first outer area OA1 reduce etching defects of the first through holes TH1 located at the outermost edge of the first effective area AA1. It is to do so. Accordingly, the deposition mask 100 according to the embodiment can improve the uniformity of the plurality of first through holes located in the effective areas AA1, AA2, and AA3, thereby improving the quality of the deposition pattern manufactured. You can do it.

Additionally, the second through holes TH2 formed in the first outer area OA1 may be formed entirely surrounding the first effective area AA1. Preferably, the second through holes TH2 include second through holes formed on the left side of the first effective area AA1, and second through holes formed on the right side of the first effective area AA1. , may include second through holes formed above the first effective area AA1 and second through holes formed below the first effective area AA1. At this time, the second through holes may be formed to minimize the difference in pore diameter between the effective portion area to be etched and the non-effective area area to be etched. At this time, the area that is not etched around the first effective portion on the deposition mask 100 is the left side area and the right side of the first outer area (OA1) surrounding the first effective portion (AA1). region, superior lateral region, and inferior lateral region. Accordingly, the second through holes TH2 formed in the first outer area OA1 may be formed in the left side area, right side area, upper side area, and lower side area of the first effective area AA1, respectively. .

Additionally, the shape of the first through hole TH1 of the first effective area AA1 may correspond to the shape of the second through hole TH2 of the first outer area OA1. Accordingly, uniformity of the first through hole TH1 included in the first effective area AA1 can be improved. For example, the shape of the first through hole TH1 in the first effective area AA1 and the shape of the second through hole TH2 in the first outer area OA1 may both be circular. However, the embodiment is not limited to this, and the first and second through holes TH1 and TH2 may have various shapes, such as a diamond pattern or an oval pattern.

Additionally, the shape of the first through hole TH1 of the first effective area AA1 may be different from the shape of the second through hole TH2 of the first outer area OA1. For example, the shape of the first through hole TH1 in the first effective area AA1 may be circular, and the shape of the second through hole TH2 in the first outer area OA1 may be square. However, the embodiment is not limited to this, and the first and second through holes TH1 and TH2 may be formed in a plurality of different shapes, such as a diamond pattern or an oval pattern.

Meanwhile, the second through holes TH2 formed in the first outer area OA1 may be formed in two or more rows. Additionally, the second through holes TH2 may be formed in 7 or fewer rows, and preferably in 5 or fewer rows. In detail, two or more second through holes (TH2) may be arranged in a row in the outer direction of the effective area (AA), or seven or fewer, preferably five or fewer, second through holes (TH2) may be disposed. . That is, as the area in which the second through holes TH2 are disposed increases, the area of the effective area decreases. Accordingly, the second through holes TH2 are arranged in 7 rows or less, preferably in 5 rows or less. Make sure it is placed.

Additionally, the second through holes TH2 formed in the first outer area OA1 may be formed in at least two rows. The second through hole TH2 is formed to improve the uniformity of the plurality of first through holes TH1 located in the first effective area AA1 and thus improve the quality of the deposition pattern. At this time, the second through holes TH2 are formed to solve the over-etching problem that occurs between an area to be etched, such as the first effective area AA1, and an area not to be etched, such as the uneffective area UA. do. At this time, when the second through holes TH2 are formed in one row, it is difficult to disperse the concentration of radicals in the etchant that causes the over-etching problem with only one row of second through holes TH2, and accordingly, the second through holes TH2 The holes (TH2) should be formed in at least two rows.

Preferably, within the deposition area including the first effective area (AA1) and the first outer area (OA1), the first through hole (TH1) of the first effective area (AA1) is at least 80% or more. Make sure it accounts for less than 90%. At this time, when the first through hole (TH1) is formed less than 80%, the amount of etching varies depending on the size difference between the first through hole (TH1) and the second through hole (TH2), and accordingly, the 1 The through hole (TH1) cannot be formed to the desired target size. Additionally, when the first through hole TH1 is formed at 90% or more, overetching occurs in the second through hole TH2 formed in the first outer area OA1. Therefore, within the deposition area including the first effective area AA1 and the first outer area OA1, the first through hole TH1 of the first effective area AA1 is at least 80% ~ 90%. Make sure it accounts for less than %.

Additionally, the horizontal diameter of the second through hole TH2 may be smaller than the horizontal diameter of the first through hole TH1. Additionally, the vertical diameter of the second through hole TH2 may be smaller than the vertical diameter of the first through hole TH1. Preferably, the size of the second through hole (TH2) may be smaller than the size of the first through hole (TH1).

In detail, the effective area (AA) may include a first aperture ratio by the plurality of first through holes (TH1), and the outer area (OA) may include a first aperture ratio by the plurality of second through holes (TH2). 2 Can include aperture ratio. The first aperture ratio may be larger than the second aperture ratio. In other words, the area of the first through hole TH1 disposed in the area A*B cm in the first effective area AA1 is the area of the first through hole TH1 disposed in the area A*B cm in the first outer area OA1. It may be larger than the area of the second through hole TH2. In other words, the area occupied by the first through hole TH1 may be larger than the area occupied by the second through hole TH2 within the same area. Preferably, the horizontal diameter of the first through hole TH1 may be 25㎛. Additionally, the horizontal diameter of the second through hole TH2 may be 23.5 μm.

The second effective area AA2 may be located within the second outer area OA2. The second effective area AA2 may have a shape corresponding to the first effective area AA1. The second outer area OA2 may have a shape corresponding to the first outer area OA1.

The second outer area OA2 may include a plurality of second through holes TH2 in the horizontal and vertical directions, respectively, from the first through hole located at the outermost part of the second effective area AA2. For example, the second outer area OA2 has a plurality of second through holes TH2 in the horizontal direction, respectively, at upper and lower positions of the first through hole located at the outermost part of the second effective area AA2. Can be placed in a row. For example, the second outer area OA2 may have a plurality of second through holes TH2 arranged in a vertical line on the left and right sides of the through hole located at the outermost part of the second effective area AA2. You can. The plurality of second through holes TH2 included in the second outer area OA2 are intended to reduce etching defects in the first through holes located at the outermost portion of the second effective area AA2. Accordingly, the deposition mask according to the embodiment can improve the uniformity of the plurality of first through holes located in the second effective area AA2, and thereby improve the quality of the deposition pattern manufactured. Meanwhile, the second through hole TH2 formed in the second outer area OA2 may be formed under the same conditions as the second through hole TH2 formed in the first outer area OA1.

The third effective area AA3 may be included in the third outer area OA3. The third effective area AA3 may include a plurality of second through holes TH2 for forming a deposition material. The third outer area OA3 surrounding the third effective area AA3 may include a plurality of second through holes.

The third effective area AA3 may have a shape corresponding to the first effective area AA1. The third outer area (OA3) may have a shape corresponding to the first outer area (OA1).

In addition, the first through hole TH1 included in the effective areas (AA1, AA2, AA3) has a shape that partially corresponds to the second through hole TH2 included in the outer areas (OA1, OA2, OA3). You can have it. For example, the first through holes TH1 included in the effective areas AA1, AA2, and AA3 may have a different shape from the second through holes TH2 located in the outer areas OA1, OA2, and OA3. there is. Accordingly, the difference in stress depending on the position of the deposition mask 100 can be adjusted.

FIG. 5 is a plan view of the effective area and the outer area of the effective area of the deposition mask according to the first embodiment, and FIG. 6 is a microscope image of the effective area of the deposition mask of FIG. 5 viewed from the plane, FIG. 7 is a diagram showing another plan view of a deposition mask according to an embodiment, and FIG. 8 is a diagram showing another plan view of a deposition mask according to an embodiment.

5 to 8 show a first effective portion including a first effective area (AA1) and a first outer area (OA1) of a deposition mask 100 according to an embodiment, the second effective area (AA2), and the second effective area (AA2). It may be a plan view of one of the second effective portion including the outer area OA2 and the third effective portion including the third effective area AA3 and the third outer area OA3.

In addition, FIGS. 5 to 8 are for explaining the shape and arrangement of the first through hole (TH1) and the second through hole (TH2), and the deposition mask 100 according to the embodiment has the first through hole (TH1) and the second through hole (TH2) shown in the drawing. It is not limited to the number of through holes (TH1).

In addition, the first to third outer areas included in the first to third effective parts are arranged to surround the left, right, upper, and lower sides of the first to third effective areas, but for convenience of explanation in the drawing, the The outer area located to the left of the effective area among the outer areas will be described. In addition, in the outer area disposed on the left side of the effective area, a plurality of second through holes TH2 in two rows are shown to be arranged in a vertical direction, but this is not limited to this. According to the embodiment, the second through holes TH2 The number may increase or decrease further.

Referring to FIGS. 5 to 8 , the deposition mask 100 may include a plurality of first through holes TH1 in the effective area AA. At this time, the first through holes TH1 may be arranged in a row or staggered depending on the direction. For example, the first through holes TH1 may be arranged in a row along the vertical and horizontal axes, and may be arranged in a row along the vertical or horizontal axis.

First, referring to FIGS. 5 and 6 , the deposition mask 100 may include a plurality of first through holes TH1 in the effective area AA. At this time, the plurality of first through holes TH1 may have a circular shape. In detail, the first through hole TH1 may have a horizontal diameter Cx1 and a vertical diameter Cy1, and may have a horizontal diameter Cx1 and a vertical diameter Cx1 of the first through hole TH1. The diameter (Cy1) values of the directions may correspond to each other.

The first through holes TH1 may be arranged in a row according to direction. For example, the first through holes TH1 may be arranged in a row along the vertical and horizontal axes.

In detail, the 1-1 through hole TH1-1 and the 1-2 through hole TH1-2 within the effective area AA may be arranged in line on the horizontal axis, and the 1-3 through hole ( TH1-3) and the 1-4th through hole TH1-4 may be arranged in a row on the longitudinal axis.

In addition, the 1-1 through hole TH1-1 and the 1-3 through hole TH1-3 in the effective area AA may be arranged in line on the longitudinal axis, and the 1-2 through hole ( TH1-2) and the 1-4th through hole TH1-4 may be arranged in a row on the horizontal axis.

That is, when the first through holes TH1 are arranged in a row on the vertical and horizontal axes, a first island is formed between two adjacent first through holes TH1 in the diagonal direction that intersects both the vertical and horizontal axes. Part (IS1) may be located. That is, the first island portion IS1 may be located between two adjacent first through holes TH1 located diagonally from each other.

For example, the first island portion IS1 may be disposed between the 1-1 through hole TH1-1 and the 1-4 through hole TH1-4. Additionally, a first island portion IS1 may be disposed between the 1-2 through hole TH1-2 and the 1-3 through hole TH1-3. The first island portion IS1 may be located in an inclination angle direction of about +45 degrees and an inclination angle direction of about -45 degrees based on the horizontal axis crossing the two adjacent first through holes, respectively. Here, the inclination angle direction around ±45 may mean the diagonal direction between the horizontal axis and the vertical axis, and the inclination angle in the diagonal direction may be measured on the same plane of the horizontal axis and the vertical axis.

Additionally, referring to FIG. 7 , another deposition mask 100 according to an embodiment may include a plurality of first through holes in the effective area AA. At this time, the plurality of first through holes may have an oval shape. In detail, the horizontal diameter Cx1 and the vertical diameter Cy1 of the first through hole TH1 may be different from each other. For example, the horizontal diameter Cx1 of the first through hole may be larger than the vertical diameter Cy1. However, the embodiment is not limited thereto, and the first through hole may have a rectangular shape, an octagonal shape, or a rounded octagonal shape.

The first through holes TH1 may be arranged in a row on one of the vertical or horizontal axes, and may be arranged staggered on the other axis.

In detail, the 1-1 through hole (TH1-1) and the 1-2 through hole (TH1-2) may be arranged in line on the horizontal axis, and the 1-3 through hole (TH1-3) and the 1- The four through holes (TH1-4) may be arranged to be alternate with the 1-1 through holes (TH1-1) and the 1-2 through holes (TH1-2) on the longitudinal axis, respectively.

When the first through holes TH1 are arranged in a row in one direction of the vertical axis or the horizontal axis, and are arranged alternately in the other direction, two adjacent first through holes TH1 in the other direction of the vertical axis or the horizontal axis The first island portion IS1 may be located between the holes TH1-1 and TH1-2. Alternatively, the first island portion IS1 may be located between three first through holes TH1-1, TH1-2, and TH1-3 located adjacent to each other. Among the three adjacent first through holes (TH1-1, TH1-2, TH1-3), two first through holes (TH1-1, TH1-2) are through holes arranged in a row, and the remaining one through hole The hole TH1-3 may refer to a through hole that may be disposed in an area between the two through holes TH1-1 and TH1-2 at an adjacent position in a direction corresponding to the alignment direction. A first island portion IS1 may be disposed between the 1-1 through hole TH1-1, the 1-2 through hole TH1-2, and the 1-3 through hole TH1-3. . Alternatively, the first island portion IS1 may be disposed between the 1-2 through hole TH1-2, the 1-3 through hole TH1-3, and the 1-4 through hole TH1-4. You can.

In addition, when measuring the horizontal diameter (Cx1) and the vertical diameter (Cy1) of a reference hole, which is any first through hole, in the deposition mask 100 according to an embodiment, the diameter (Cy1) in the horizontal direction adjacent to the reference hole The deviation between the respective horizontal diameters (Cx1) of the first through holes (TH1) and the deviation between the vertical diameters (Cy1) may be implemented as about 2% to about 10%. That is, if the size difference between adjacent first through holes of one reference hole is implemented to be about 2% to about 10%, uniformity of deposition can be secured. For example, the size difference between the reference hole and the adjacent first through holes may be about 4% to about 9%. For example, the size difference between the reference hole and the adjacent first through holes may be about 5% to about 7%. For example, the size difference between the reference hole and the adjacent first through holes may be about 2% to about 5%. If the size difference between the reference hole and the adjacent first through holes is less than about 2%, the moire occurrence rate may increase in the OLED panel after deposition. If the size difference between the reference hole and the adjacent first through holes exceeds about 10%, the incidence of color unevenness in the OLED panel after deposition may increase. The average deviation of the first through hole diameter may be ±5㎛. For example, the average deviation of the first through-hole diameter may be ±3㎛. For example, the average deviation of the first through-hole diameter may be ±1㎛. The embodiment can improve deposition efficiency by implementing a size difference between the reference hole and the adjacent first through holes within ±3㎛.

Additionally, referring to FIG. 8 , the deposition mask 100 may include a plurality of first through holes TH1 in the effective area AA. At this time, the plurality of first through holes TH1 may have a rectangular shape. For example, the first through hole TH1 may have a diamond shape. The first through hole (TH1) may have a horizontal length (Cx1) and a vertical length (Cy1), and the horizontal length (Cx1) and the vertical direction of the first through hole (TH1) may be The lengths Cy1 may correspond to each other.

The first through holes TH1 may be arranged in a row according to direction. For example, the first through holes TH1 may be arranged in a row on one of the vertical and horizontal axes, and may be arranged staggered on the other axis.

In detail, the 1-1 through hole (TH1-1), the 1-2 through hole (TH1-2), and the 1-3 through hole (TH1-3) may be arranged in line on the horizontal axis, and the 1- The 4 through holes (TH1-4) and the 1-5 through holes (TH1-5) may be arranged in line on the horizontal axis, and the 1-4 through holes (TH1-4) and the 1-5 through holes (TH1) -5) may be arranged to be alternate with the 1-1 through hole (TH1-1), the 1-2 through hole (TH1-2), and the 1-3 through hole (TH1-3), respectively, on the longitudinal axis. For example, the 1-4 through holes (TH1-4) may be arranged alternately between the 1-1 through holes (TH1-1) and the 1-2 through holes (TH1-2), and the 1-1 The five through holes (TH1-5) may be arranged to be staggered between the 1-2nd through holes (TH1-2) and the 1-3th through holes (TH1-3).

When the first through holes TH1 are arranged in a row in one direction of the vertical axis or the horizontal axis and staggered in the other direction, the first island portion IS1 is located at the point where the vertical axis and the horizontal axis intersect. can be located Alternatively, the first island portion IS1 may be located between four adjacent first through holes TH1-1, TH1-2, TH1-4, and TH1-6.

Among the four adjacent first through holes (TH1-1, TH1-2, TH1-4, TH1-6), two first through holes (TH1-1, TH1-2) extend in either the vertical or horizontal axis. It may refer to first through holes arranged in a line, and the remaining two first through holes (TH1-4, TH1-6) refer to first through holes arranged in a line in the other direction of the vertical or horizontal axis. can do.

Meanwhile, the first island portion IS1 refers to an unetched surface between the first through holes TH1 on the other side of the deposition mask 100 where the facing hole V2 of the effective area AA is formed. can do. In detail, the first island portion (IS) is an unetched deposition mask excluding the second etching surface (ES1-2) and the first through hole (TH1) located in the facing hole in the effective area (AA) of the deposition mask. It may be the other side of (100). The deposition mask 100 of the embodiment may be for deposition of high-resolution or ultra-high-resolution OLED pixels with a resolution of 400 PPI or more, specifically 400 PPI to 800 PPI or more.

For example, the deposition mask 100 of the embodiment may be used to form a deposition pattern with a high resolution of Full HD (High Definition) having a resolution of 400 PPI or more. For example, the deposition mask 100 of the embodiment may be for depositing OLED pixels in which the number of pixels in the horizontal and vertical directions is 1920*1080 or more and 400 PPI or more. That is, one effective portion included in the deposition mask 100 of the embodiment may be used to form the number of pixels with a resolution of 1920*1080 or more.

For example, the deposition mask 100 of the embodiment may be used to form a deposition pattern with high resolution of QHD (Quad High Definition) having a resolution of 500 PPI or more. For example, the deposition mask 100 of the embodiment may be for depositing OLED pixels in which the number of pixels in the horizontal and vertical directions is 2560*1440 or more and 530 PPI or more. Through the deposition mask 100 of the embodiment, the number of pixels per inch may be 530 PPI or more based on a 5.5-inch OLED panel. That is, one effective portion included in the deposition mask 100 of the embodiment may be used to form the number of pixels with a resolution of 2560*1440 or more.

For example, the deposition mask 100 of the embodiment may be used to form a deposition pattern having ultra-high resolution (UHD) with a resolution of 700 PPI or more. For example, the deposition mask 100 of the embodiment has a pixel count of 3840*2160 or more in the horizontal and vertical directions, and forms a deposition pattern with UHD (Ultra High Definition) resolution for OLED pixel deposition of 794 PPI or more. It may be for this purpose.

The diameter of the first through hole TH1 may be the width between the communication parts CA. In detail, the diameter of the first through hole TH1 can be measured at a point where the end of the etched surface in the small hole V1 and the end of the etched surface in the large hole V2 meet. The diameter of the first through hole TH1 may be measured in any one of the horizontal, vertical, and diagonal directions. The diameter of the first through hole TH1 measured in the horizontal direction may be 33 μm or less. Alternatively, the diameter of the first through hole TH1 measured in the vertical direction may be 33 μm or less. Alternatively, the diameter of the first through hole TH1 may be an average value of values measured in the horizontal, vertical, and diagonal directions.

Therefore, the deposition mask 100 according to the embodiment can implement QHD level resolution. For example, the diameter of the first through hole TH1 may be about 15 μm to about 33 μm. For example, the diameter of the first through hole TH1 may be about 19㎛ to about 33㎛. For example, the diameter of the first through hole TH1 may be about 20 μm to about 27 μm. If the diameter of the first through hole TH1 is greater than about 33㎛, it may be difficult to achieve a resolution of 500PPI or higher. Meanwhile, if the diameter of the through hole TH1 is less than about 15㎛, deposition defects may occur. Here, it is said that the diameter of the first through hole (TH1) has the same range as above, and substantially, the diameter of the first through hole (TH1) is the diameter of the second through hole (TH2), which will be described later. bigger than For example, the diameter of the second through hole may be smaller than the diameter of the first through hole and may be 0.9 times or more, preferably 0.95 times or more, than the diameter of the first through hole. For example, when the diameter of the first through hole (TH1) is formed to be 25㎛ within the above range, the diameter of the second through hole (TH2) is 23.5, which is smaller than the diameter of the first through hole (TH1). It can be formed in ㎛. When the diameter of the second through hole is too small compared to the diameter of the first through hole, for example, when the diameter of the second through hole is smaller than 0.5 times the diameter of the first through hole, the volume decreases and deformation occurs during stretching. It is possible that it will happen.

Referring to FIGS. 5 and 6 , the pitch between two adjacent first through holes TH1 among the plurality of first through holes in the horizontal direction may be about 48 μm or less. For example, the pitch between two adjacent first through holes TH1 among the plurality of first through holes TH1 in the horizontal direction may be about 20 μm to about 48 μm. For example, the pitch between two adjacent first through holes TH1 among the plurality of first through holes TH1 in the horizontal direction may be about 30 μm to about 35 μm. Here, the spacing may mean the spacing (P1) between the centers of the two adjacent 1-1 through holes (TH1-1) and the centers of the 1-2 through holes (TH1-2) in the horizontal direction. . Alternatively, the spacing may mean the spacing (P2) between the centers of two adjacent 1-1 island parts and the centers of the 1-2 island parts in the horizontal direction. Here, the center of the first island IS1 may be the center of the other non-etched surface between the four first through holes TH1 adjacent in the horizontal and vertical directions. For example, the center of the first island IS1 is based on the two 1-1 through holes TH1-1 and 1-2 through holes TH1-2 adjacent in the horizontal direction, -1-3 through hole (TH1-3) vertically adjacent to the 1-1 through hole (TH1-1) and 1-4 through hole (TH1-3) vertically adjacent to the 1-2 through hole (TH1-2) It may mean a point where the horizontal axis connecting the edge of one first island portion (IS1) located in the area between TH1-4) and the vertical axis connecting the edge intersect.

Additionally, referring to FIG. 7 , the pitch between two adjacent first through holes TH1 among the plurality of first through holes in the horizontal direction may be about 48 μm or less. For example, the pitch between two adjacent first through holes TH1 among the plurality of first through holes TH1 in the horizontal direction may be about 20 μm to about 48 μm. For example, the pitch between two adjacent first through holes TH1 among the plurality of first through holes TH1 in the horizontal direction may be about 30 μm to about 35 μm. Here, the spacing may mean the spacing (P1) between the centers of the two adjacent 1-1 through holes (TH1-1) and the centers of the 1-2 through holes (TH1-2) in the horizontal direction. . Additionally, the spacing may mean the spacing (P2) between the centers of two adjacent 1-1 island portions and the centers of the 1-2 island portion in the horizontal direction. Here, the center of the first island IS1 may be the center of the other non-etched surface between one through hole and two adjacent through holes in the vertical direction. Alternatively, here, the center of the first island IS1 may be the center of the other non-etched surface between two through holes and one through hole adjacent in the vertical direction. That is, the center of the first island IS1 is the center of the non-etched surface between the three adjacent through holes, and the three adjacent through holes mean that a triangular shape can be formed when the centers are connected. there is.

Additionally, referring to FIG. 8 , the pitch between two adjacent first through holes TH1 among the plurality of first through holes in the horizontal direction may be about 48 μm or less. For example, the pitch between two adjacent first through holes TH1 among the plurality of first through holes TH1 in the horizontal direction may be about 20 μm to about 48 μm. For example, the pitch between two adjacent first through holes TH1 among the plurality of first through holes TH1 in the horizontal direction may be about 30 μm to about 35 μm. Here, the spacing may mean the spacing (P1) between the centers of the two adjacent 1-1 through holes (TH1-1) and the centers of the 1-2 through holes (TH1-2) in the horizontal direction. . Alternatively, the spacing may mean the spacing (P2) between the centers of two adjacent first islands in the horizontal direction. Here, the center of the first island IS1 may be the center of the other non-etched surface between the four through holes TH1 adjacent in the horizontal and vertical directions. For example, the center of the first island IS1 is based on the two 1-1 through holes TH1-1 and 1-2 through holes TH1-2 adjacent in the horizontal direction, -1-3 through hole (TH1-3) vertically adjacent to the 1-1 through hole (TH1-1) and 1-4 through hole (TH1-3) vertically adjacent to the 1-2 through hole (TH1-2) It may mean a point where the horizontal axis connecting the edge of one first island portion (IS1) located in the area between TH1-4) and the vertical axis connecting the edge intersect. For example, the center of the first island IS1 is the two horizontally adjacent first through holes, the 1-1 through hole TH1-1 and the 1-2 through hole TH1-2, and A 1-4 through hole (TH4), which is two first through holes adjacent to each other in the vertical direction at the center of the area between the 1-1 through hole (TH1-1) and the 1-2 through hole (TH1-2), and It may be the center of the non-etched surface located in the area between the 1st-6th through holes TH1-6. That is, the center of the first island IS may be the center of the non-etched surface located between the four first through holes.

The measuring direction of the diameter of the first through hole TH1 and the measuring direction of the distance between two adjacent first through holes TH1 may be the same. The spacing between the first through holes TH1 may be measured by measuring the spacing between two first through holes TH1 adjacent to each other in the horizontal or vertical direction.

That is, the deposition mask 100 according to the embodiment can deposit OLED pixels with a resolution of 400 PPI or more. In detail, the deposition mask 100 according to the embodiment has a diameter of the first through hole (TH1) in the effective area (AA) of about 33 um or less, and a spacing (pitch) between the first through holes (TH1) of about 33 μm or less. As the thickness is less than 48um, OLED pixels with a resolution of 500PPI or more can be deposited. In other words, QHD-level resolution can be implemented using the deposition mask 100 according to the embodiment.

The diameter of the first through hole TH1 and the distance between the first through holes TH1 may be of a size for forming a green subpixel. For example, the diameter of the first through hole TH1 can be measured based on the green (G) pattern. Since the green (G) pattern has a low visual recognition rate, a larger number is required than the red (R) pattern and blue (B) pattern, and the spacing between the through holes (TH1) is smaller than the red (R) pattern and the blue (B) pattern. B) It can be narrower than the pattern. The deposition mask 100 may be an OLED deposition mask for implementing QHD display pixels.

For example, the deposition mask 100 may be used to deposit at least one subpixel of red (R), first green (G1), blue (B), and second green (G2). In detail, the deposition mask 100 may be used to deposit a red (R) subpixel. Alternatively, the deposition mask 100 may be used to deposit a blue (B) subpixel. Alternatively, the deposition mask 100 may be used to simultaneously form a first green (G1) subpixel and a second green (G2) subpixel.

The pixel arrangement of the organic light emitting display device may be arranged in the following order (RGBG): red (R) - first green (G1) - blue (B) - second green (G2). In this case, red (R) - first green (G1) can form one pixel (RG), and blue (B) - second green (G2) can form another pixel (BG). In an organic light emitting display device of this arrangement, since the deposition interval for green light emitting organic materials is narrower than that for red light emitting organic materials and blue light emitting organic materials, a deposition mask 100 of the same type as the present invention may be needed.

Additionally, the deposition mask 100 according to the embodiment may have a diameter of the first through hole TH1 in the effective area AA of about 20 μm or less in the horizontal direction. Accordingly, the deposition mask 100 according to the embodiment can implement UHD-level resolution. For example, in the deposition mask 100 according to the embodiment, the diameter of the first through hole TH1 is about 20㎛ or less, and the gap between the first through holes is about 32㎛ or less, so the 800PPI level It is possible to deposit OLED pixels with a resolution of . In other words, UHD-level resolution can be implemented using the deposition mask according to the embodiment.

The diameter of the first through hole and the distance between the first through holes may be of a size for forming a green subpixel. The deposition mask may be an OLED deposition mask for implementing UHD display pixels.

Meanwhile, the deposition mask 100 may include a plurality of second through holes TH2 in the outer area OA. At this time, the second through holes TH2 may be arranged in a row or staggered depending on the direction. For example, the second through holes TH2 may be arranged in a row along the vertical and horizontal axes, and may be arranged in a row along the vertical or horizontal axis.

The deposition mask 100 may include a plurality of second through holes TH2 in the outer area OA. At this time, the plurality of second through holes TH2 may have a circular shape. In detail, the second through hole (TH2) may have a horizontal diameter (Cx2) and a vertical diameter (Cy2), and may have a horizontal diameter (Cx2) perpendicular to the horizontal diameter (Cx2) of the second through hole (TH1). The diameter (Cy2) values of the directions may correspond to each other. At this time, at least one of the horizontal diameter (Cx2) and the vertical diameter (Cy2) of the second through hole (TH2) is the horizontal diameter (Cx1) of the first through hole (TH1) and It may be smaller than at least one diameter among the vertical diameters (Cy1).

The second through holes TH2 may be arranged in a row according to direction. For example, the second through holes TH2 may be arranged in a row along the vertical and horizontal axes.

In detail, the 2-1 through hole TH2-1 and the 2-2 through hole TH2-2 within the outer area OA may be arranged in a line on the horizontal axis, and the 2-3 through hole ( TH2-3) and the 2-4th through hole (TH2-4) may be arranged in a row on the longitudinal axis.

In addition, the 2-1 through hole TH2-1 and the 2-3 through hole TH2-3 in the outer area OA may be arranged in line on the longitudinal axis, and the 2-2 through hole ( TH2-2) and the 2-4th through hole TH2-4 may be arranged in a row on the horizontal axis.

That is, when the second through holes TH2 are arranged in a row on the vertical and horizontal axes, a second island is formed between two adjacent second through holes TH2 in the diagonal direction that intersects both the vertical and horizontal axes. Part (IS2) may be located. That is, the second island portion IS2 may be located between two adjacent second through holes TH2 located diagonally from each other.

For example, the second island portion IS2 may be disposed between the 2-1st through hole TH2-1 and the 2-4th through hole TH2-4. Additionally, a second island portion IS2 may be disposed between the 2-2 through hole TH2-2 and the 2-3 through hole TH2-3. The second island portion IS1 may be positioned in an inclination angle direction of approximately +45 degrees and an inclination angle direction of approximately -45 degrees based on the horizontal axis crossing the two adjacent second through holes, respectively. Here, the inclination angle direction around ±45 may mean the diagonal direction between the horizontal axis and the vertical axis, and the inclination angle in the diagonal direction may be measured on the same plane of the horizontal axis and the vertical axis.

At this time, the second island portion IS2 includes a 2-1 island portion IS2-1 disposed between a plurality of second through holes TH2, a second through hole TH2, and a first through hole. It includes a 2-2 island portion (IS2-2) disposed between (TH1).

Meanwhile, the first island IS1 and the second island IS2 may have different sizes. The spacing between the first through holes TH1 and the spacing between the second through holes TH2 may be the same. At this time, the size of each of the second through holes TH2 is smaller than the size of the first through hole TH1. Here, the size may be the vertical diameter of the through hole, the horizontal diameter, or the width between communicating parts.

Accordingly, the second island IS2 is larger than the first island IS1. Preferably, on the deposition mask, the area of one first island portion (IS1) is smaller than the area of one second island portion (IS2). Preferably, the horizontal width of the second island portion IS2 is greater than the horizontal width of the first island portion IS1. Preferably, the vertical width of the second island IS2 is greater than the vertical width of the first island IS1.

Meanwhile, in the second island portion IS2, a 2-2 island portion IS2-2 disposed between the first through hole TH1 and the second through hole TH2, and a second island portion IS2-2 other than the first through hole TH1 and the second through hole TH2. The -1 island portion (IS2-1) may also have different sizes. That is, a portion of the 2-2 island portion IS2-2 is affected by the second through hole TH2, and the remaining portion is affected by the first through hole TH1. Accordingly, the size of the portion of the 2-2 island portion IS2-2 affected by the second through hole TH2 may be larger than the size of the portion affected by the first through hole TH1. . That is, the size of the portion of the 2-2 island portion IS2-2 disposed in the outer area OA may be larger than the width of the portion disposed in the effective area AA. Preferably, the area of the 2-2 island portion (IS2-2) may be larger than the area of the first island portion (IS1) and smaller than the area of the 2-1 island portion (IS2-1). there is.

At this time, the left and right island shapes of the first island IS1 and the 2-1 island IS2-1 may be the same based on a vertical line passing through the center. Here, the center of each island portion will be omitted since it has already been mentioned in the description of the first island portion IS1. That is, the first island portion IS1 and the second-first island portion IS2-1 have shapes that are symmetrical to each other, with the island portion located on the left and the island portion located on the right based on a vertical line passing through the center.

On the other hand, the shapes of the left and right island portions of the 2-2 island portion IS2-2 are different based on a vertical line passing through the center. Preferably, the island portion located on the left and the island portion located on the right of the 2-2 island portion IS2-2 have asymmetric shapes with respect to a vertical line passing through the center. At this time, a portion of the 2-2 island portion (IS2-2) located on the right side is disposed in the effective area (AA), and a portion of the 2-2 island portion (IS2-2) located on the left side is disposed in the effective area (AA). It may be placed in the outer area (OA).

In addition, when measuring the horizontal diameter (Cx2) and the vertical diameter (Cy2) of a reference hole, which is any second through hole, in the deposition mask 100 according to the embodiment, the diameter (Cy2) in the horizontal direction adjacent to the reference hole The deviation between the horizontal diameters (Cx2) of the second through holes (TH2) and the deviation between the vertical diameters (Cy2) of the second through holes (TH2) may be implemented as about 2% to about 10%. That is, if the size difference between adjacent second through-holes of one reference hole is implemented to be about 2% to about 10%, uniformity of deposition can be secured. For example, the size difference between the reference hole and the adjacent second through holes may be about 4% to about 9%. For example, the size difference between the reference hole and the adjacent second through holes may be about 5% to about 7%. For example, a size difference between the reference hole and the adjacent second through holes may be about 2% to about 5%. If the size difference between the reference hole and the adjacent second through-holes is less than about 2%, the moire occurrence rate may increase in the OLED panel after deposition. If the size difference between the reference hole and the adjacent second through-holes exceeds about 10%, the incidence of color staining in the OLED panel after deposition may increase. The average deviation of the second through-hole diameter may be ±5㎛. For example, the average deviation of the second through-hole diameter may be ±3㎛. For example, the average deviation of the second through-hole diameter may be ±1㎛. The embodiment can improve deposition efficiency by implementing a size difference between the reference hole and the adjacent second through holes within ±3㎛.

Meanwhile, the second island portion IS2 refers to the unetched surface between the second through holes TH2 on the other side of the deposition mask 100 where the facing hole V2 of the outer area OA is formed. can do. In detail, the second island IS2 is the other surface of the deposition mask 100 that is not etched, excluding the second etching surface and the second through hole TH2 located in the facing hole in the outer area (OA) of the deposition mask. It can be. The deposition mask 100 of the embodiment may be for deposition of high-resolution or ultra-high-resolution OLED pixels with a resolution of 400 PPI or more, specifically 400 PPI to 800 PPI or more.

For example, the deposition mask 100 of the embodiment may be used to form a deposition pattern with a high resolution of Full HD (High Definition) having a resolution of 400 PPI or more. For example, the deposition mask 100 of the embodiment may be for depositing OLED pixels in which the number of pixels in the horizontal and vertical directions is 1920*1080 or more and 400 PPI or more. That is, one effective portion included in the deposition mask 100 of the embodiment may be used to form the number of pixels with a resolution of 1920*1080 or more.

For example, the deposition mask 100 of the embodiment may be used to form a deposition pattern with high resolution of QHD (Quad High Definition) having a resolution of 500 PPI or more. For example, the deposition mask 100 of the embodiment may be for depositing OLED pixels in which the number of pixels in the horizontal and vertical directions is 2560*1440 or more and 530 PPI or more. Through the deposition mask 100 of the embodiment, the number of pixels per inch may be 530 PPI or more based on a 5.5-inch OLED panel. That is, one effective portion included in the deposition mask 100 of the embodiment may be used to form the number of pixels with a resolution of 2560*1440 or more.

For example, the deposition mask 100 of the embodiment may be used to form a deposition pattern having ultra-high resolution (UHD) with a resolution of 700 PPI or more. For example, the deposition mask 100 of the embodiment has a pixel count of 3840*2160 or more in the horizontal and vertical directions, and forms a deposition pattern with UHD (Ultra High Definition) resolution for OLED pixel deposition of 794 PPI or more. It may be for this purpose.

The diameter of the second through hole TH1 may be the width between the communication parts CA. In detail, the diameter of the second through hole TH1 can be measured at a point where the end of the etched surface in the small hole V1 and the end of the etched surface in the large hole V2 meet. The diameter of the second through hole TH2 may be measured in any one of the horizontal, vertical, and diagonal directions. The diameter of the second through hole TH2 measured in the horizontal direction may be 32㎛ or less. Alternatively, the diameter of the second through hole TH2 measured in the vertical direction may be 32 μm or less. Alternatively, the diameter of the second through hole TH2 may be an average value of values measured in the horizontal, vertical, and diagonal directions. At this time, the second through hole TH2 satisfies the above range and has a diameter smaller than that of the first through hole TH1.

Therefore, the deposition mask 100 according to the embodiment can implement QHD level resolution. For example, the diameter of the second through hole TH2 may be about 15 μm to about 33 μm. For example, the diameter of the second through hole TH2 may be about 19 μm to about 33 μm. For example, the diameter of the second through hole TH2 may be about 20 μm to about 27 μm. If the diameter of the second through hole TH2 is greater than about 33㎛, it may be difficult to achieve a resolution of 500PPI or higher. Meanwhile, if the diameter of the second through hole TH2 is less than about 15㎛, deposition defects may occur. Here, it is said that the diameter of the second through hole (TH2) has the same range as above, and in reality, the diameter of the second through hole (TH2) is smaller than the diameter of the first through hole (TH1). . In other words, when the diameter of the first through hole (TH1) is formed to be 25㎛ within the above range, the diameter of the second through hole (TH2) is 23.5㎛, which is smaller than the diameter of the first through hole (TH1). It can be formed as

Meanwhile, the pitch between two adjacent second through holes TH2 among the plurality of second through holes in the horizontal direction may be about 48 μm or less. For example, the pitch between two adjacent second through holes TH2 among the plurality of second through holes TH2 in the horizontal direction may be about 20 μm to about 48 μm. For example, the pitch between two adjacent second through holes TH2 among the plurality of second through holes TH2 in the horizontal direction may be about 30 μm to about 35 μm. Here, the spacing may mean the spacing between the centers of the two adjacent 2-1 through holes (TH2-1) and the centers of the 2-2 through holes (TH2-2) in the horizontal direction. Alternatively, the spacing may mean the spacing between the centers of two adjacent 2-1 island portions and the centers of the 2-2 island portions in the horizontal direction.

In other words, the gap between two adjacent second through holes (TH2) among the plurality of second through holes (TH2) is equal to the distance between two adjacent first through holes (TH1) among the plurality of first through holes (TH1). It may correspond to the gap (P1) between them.

The measuring direction of the diameter of the second through hole TH2 and the measuring direction of the distance between two adjacent second through holes TH2 may be the same. The spacing between the second through holes TH2 may be measured by measuring the spacing between two second through holes TH2 adjacent to each other in the horizontal or vertical direction.

That is, the deposition mask 100 according to the embodiment can deposit OLED pixels with a resolution of 400 PPI or more. In detail, the deposition mask 100 according to the embodiment has a diameter of the second through hole (TH2) in the effective area (AA) of about 32 um or less, and a spacing (pitch) between the second through holes (TH2) of about 32 μm or less. As the thickness is less than 48um, OLED pixels with a resolution of 500PPI or more can be deposited. In other words, QHD-level resolution can be implemented using the deposition mask 100 according to the embodiment.

FIG. 9 is a diagram illustrating the height difference and size between the cross section in the A-A' direction of FIG. 5 and the cross section of the effective area (AA) and the outer area (OA) in the B-B' direction by overlapping each cross section.

First, the cross section in the A-A' direction is explained. The A-A' direction is a cross section crossing the central area between two first and second through holes (TH1) and second through holes (TH2) adjacent in the vertical direction. That is, the A-A' direction is a cross section crossing the central area between two 1-1 through holes (TH1-1) and 1-2 through holes (TH1-2) adjacent in the vertical direction. That is, the A-A' direction is a cross section crossing the central area between two 2-1 through holes (TH2-1) and 2-2 through holes (TH2-2) adjacent in the vertical direction. That is, the cross section in the A-A' direction may not include the first through hole TH1 and the second through hole TH2.

The cross section in the A-A' direction is not etched between the etched surfaces ES2 in the facing holes of the first through hole TH1 and the second through hole TH2 and the etching surfaces ES2 in the facing holes. A first island portion (IS1) and a second island portion (IS2), which are the other surfaces of the deposition mask, may be located. Accordingly, the first and second island portions IS1 and IS2 may include a surface parallel to an unetched surface of the deposition mask. Alternatively, the first and second island portions IS1 and IS2 may include a surface that is the same as or parallel to the other non-etched surface of the deposition mask 100. The second island IS2 may include a 2-1 island IS2-1 and a 2-2 island IS2-2.

The thickness of the deposition mask 100 may be about 30 μm or less. For example, the thickness may be about 20 μm to about 30 μm. For example, the thickness may be about 15 μm to about 20 μm. The thickness of the deposition mask 100 may be the thickness of the unetched portion of the one side 101 and the other side 102 of the deposition mask 100. That is, the thickness of the deposition mask 100 may correspond to the thickness of the metal plate 10 for manufacturing the deposition mask 100 in the method of manufacturing the deposition mask 100, which will be described later. That is, the island portions IS1, IS2-1, and IS2-2 may be the same as the thickness of the deposition mask 100.

Next, the cross section in the B-B direction will be described. The B-B' direction is a cross section crossing the centers of each of the two first through holes TH1 and the second through holes TH2 adjacent in the horizontal direction. That is, the B-B' direction is a cross section crossing the centers of each of the two 1-1 through holes (TH1-1) and the second through holes (TH1-2) adjacent in the horizontal direction. That is, the B-B' direction is a cross section crossing the centers of each of the two 2-1st through holes (TH2-1) and the 2-2nd through holes (TH2-2) adjacent to each other in the horizontal direction. That is, the cross section in the B-B' direction may include a plurality of first through holes TH1 and a plurality of second through holes TH2.

One rib (RB1, RB2, RB3) may be located between adjacent through holes in the B-B' direction. That is, one first rib (RB1) is formed between the 1-3 through hole (TH1-3) and the 1-4th through hole (TH1-4) horizontally adjacent to the 1-3 through hole (TH1-3). ) can be located. In addition, the 1-3 through hole (TH1-3) and the 1-3 through hole (TH1-3) are horizontally adjacent to each other, but located in the opposite direction to the 1-3 through hole (TH1-3). Another first rib RB1 may be located between the holes. Additionally, one first through hole TH1 may be located between the plurality of first ribs RB1. That is, one first through hole TH1 may be located between two first ribs RB1 adjacent in the horizontal direction.

In addition, a second hole adjacent to the 2-3 through hole (TH2-3) and the 2-3 through hole (TH2-3) in the horizontal direction, but located in the opposite direction to the 2-3 through hole (TH2-3) -4 A second rib (RB2) may be located between the through holes (TH2-4). Additionally, one second through hole TH1 may be located between the plurality of second ribs RB2. That is, one second through hole TH2 may be located between two second ribs RB2 adjacent in the horizontal direction.

In addition, between the 2-4th through hole (TH2-4) and the 1-3th through hole (TH1-3) in the effective area (AA) adjacent to the 2-4th through hole (TH2-3) in the horizontal direction. 3 ribs (RB3) may be located. The third rib RB3 may be located on the boundary between the effective area AA and the outer area OA on the deposition mask 100.

That is, the cross section in the B-B' direction is the first rib RB1 connecting the etched surfaces in the facing holes of the adjacent first through holes TH1, and the etching surfaces in the facing holes of the adjacent second through holes TH2. A second rib (RB2) connecting the surfaces to each other, and a third rib (RB3) connecting the etched surface of the facing hole of the first through hole (TH1) and the etched surface of the facing hole of the adjacent second through hole (TH2). can be located. Here, the ribs RB1, RB2, and RB3 may be areas where the boundaries of two adjacent large holes are connected. Since the ribs RB1, RB2, and RB3 are etched surfaces, their thickness may be smaller than that of the island portions IS1, IS2-1, and IS2-2. For example, the width W1 of the first island IS1 may be about 2 μm or more.

That is, the first rib RB1 may be located at a position where the facing holes of the plurality of adjacent first through holes TH1 contact each other. Additionally, the second rib RB2 may be located at a position where the facing holes of the plurality of adjacent second through holes TH2 contact each other. Additionally, the third rib RB3 may be located at a position where the facing hole of the adjacent first through hole TH1 and the facing hole of the second through hole TH2 come into contact with each other. The third rib RB3 may be located on the boundary between the effective area AA and the outer area OA. Meanwhile, each of the first rib (RB1), the second rib (RB2), and the third rib (RB3) has a thickness smaller than the thickness of the non-effective portion (UA) where the etching is not performed. In other words, within the effective area and the outer area, the first through holes, the second through holes, or the facing holes of the first through hole and the second through hole are in continuous contact with each other, and accordingly, the first rib RB1, Each of the second rib RB2 and the third rib RB3 has a thickness smaller than the thickness of the non-effective portion UA. That is, on the line B-B', which horizontally crosses the active part including the effective area and the outer area, there is no area having the same thickness as the thickness of the unactive area (UA). In other words, there is no non-etched area within the effective portion.

That is, the width W1 of the remaining portion of the other surface that is not etched in a direction parallel to the other surface may be about 2 μm or more. When the width W1 of one end and the other end of one first island IS1 is about 2 μm or more, the total volume of the deposition mask 100 can be increased. The deposition mask 100 of this structure ensures sufficient rigidity against the tensile force applied in the organic material deposition process, etc., and may be advantageous in maintaining uniformity of through holes.

Additionally, the width W2 of one 2-1 island portion IS2-1 may be larger than the width W1 of the first island portion IS1. That is, the through hole disposed on both sides of the 2-1 island portion IS2-1 is the second through hole TH2 whose diameter is smaller than the first through hole TH1, and because the diameter of the through hole is small Accordingly, the width (W2) of the island portion may become larger. Accordingly, the width W2 of the 2-1 island portion IS2-1 is greater than the width W1 of the first island portion IS1.

In addition, the width (W3) of one 2-2 island portion (IS2-2) is greater than the width (W1) of the first island portion (IS1), and the 2-1 island portion (IS2-1) It is smaller than the width (W2). That is, the first through hole TH1 is disposed on one side of the 2-2 island portion IS2-2, and the second through hole TH2 is disposed on the other side. Accordingly, a portion of the 2-2 island portion IS2-2 is affected by the first through hole TH1, and the remaining portion is affected by the second through hole TH2. That is, the width (W3-1) of a portion of the 2-2 island portion (IS2-2) may be 1/2 of the width (W1) of the first island portion (IS1), and the width of the remaining portion ( W3-2) may be 1/2 of the width W2 of the 2-1 island portion IS2-1.

Additionally, the first rib RB1 located between the first through holes TH1 may have a maximum thickness T1 measured at the center area of about 15 μm or less. For example, the maximum thickness T1 measured at the center of the first rib RB1 may be about 7 μm to about 10 μm. For example, the maximum thickness T1 measured from the center of the first rib RB1 may be about 6 μm to about 9 μm. If the maximum thickness (T1) measured at the center of the first rib (RB1) exceeds about 15㎛, it may be difficult to form an OLED deposition pattern with a high resolution of 500 PPI or higher. Additionally, if the maximum thickness T1 measured at the center of the first rib RB1 is less than about 6㎛, it may be difficult to form a deposition pattern uniformly.

Additionally, the maximum thickness T2 measured at the center area of the second rib RB2 located between the second through holes TH2 may be thicker than the thickness of the first rib RB1. At this time, the second rib RB2 may be formed to be thicker than the thickness of the first rib RB1 while satisfying the thickness range of the first rib RB1.

In addition, the third rib RB3 located between the first through hole TH1 and the second through hole TH2 has a maximum thickness T3 measured at the center area that is thicker than the thickness of the first rib RB1. However, it may be thinner than the thickness of the second rib RB2. That is, the third rib RB3 satisfies the thickness range of the first rib RB1 and has a thickness that exists between the thickness of the first rib RB1 and the thickness of the second rib RB2. You can have

Meanwhile, a non-etched area having a certain area may be formed between the outer area where the relatively small second through hole TH2 is placed and the effective area where the first through hole TH1 is placed. . In addition, the problem of over-etching occurring based on the second through-hole in the outer area disposed at a certain distance from the effective area can be solved. However, the over-etching problem as described above occurs as radicals are concentrated between the non-etched area and the etched area. Accordingly, if even a part of the non-etched area remains between the effective area and the outer area as described above, radicals may be concentrated on the effective area adjacent to the non-etched area due to the remaining non-etched area. Accordingly, the first through hole disposed outside the effective area is overetched due to the concentration of radicals, and as a result, the first through hole has a size larger than the target size. Additionally, the thickness of the ribs connecting the first through holes becomes thinner, thereby weakening the strength of the overall effective area. Therefore, in the present invention, no non-etched area exists in the area where etching is performed as described above. In other words, there is no non-etching area between the effective area and the outer area, and accordingly, a relatively small through hole is placed in the outer area adjacent to the non-effective area, thereby solving the over-etching problem. Additionally, in the present invention, a through hole is not located in the non-effective part. At this time, if a through hole is located in the non-effective area, the overall strength of the deposition mask may decrease, and a problem of the effective area being separated during tension may occur. Therefore, in the present invention, the tensile rigidity of the deposition mask can be secured by preventing through holes from being disposed in the non-effective portion.

FIG. 10 is a cross-sectional view taken in the B-B' direction of FIG. 5. Using FIG. 10, the cross section in the B-B' direction and the ribs RB1, RB2, and RB3 according to FIG. 9 and the through holes TH1 and TH2 between the ribs RB1, RB2, and RB3 will be described.

Referring to FIG. 10, the deposition mask 100 according to the embodiment is formed in the effective area (AA) and the outer area (OA) where the first through hole (TH1) and the second through hole (TH2) are formed by etching. The thickness of and the thickness of the unetched non-effective area (UA) may be different. In detail, the thickness of the ribs RB1, RB2, and RB3 may be smaller than the thickness of the non-etched non-effective portion UA.

In the deposition mask 100 according to an embodiment, the thickness of the non-effective area (UA) may be greater than the thickness of the effective areas (AA1, AA2, and AA3) and the thickness of the outer areas (OA1, OA2, and OA3). For example, the deposition mask 100 may have a maximum thickness of the non-effective area (UA) to the non-deposition area (NDA) of about 30 μm or less. For example, the deposition mask 100 may have a maximum thickness of the non-effective area (UA) to the non-deposition area (NDA) of about 25 μm or less. For example, the deposition mask of the embodiment may have a maximum thickness of a non-effective portion or a non-deposition area of about 15 μm to about 25 μm. If the maximum thickness of the non-effective portion or non-deposition area of the deposition mask according to the embodiment exceeds about 30㎛, the thickness of the metal plate 10, which is the raw material of the deposition mask 100, becomes thick, so a fine-sized penetration is possible. It may be difficult to form a hole (TH). In addition, when the maximum thickness of the non-effective area (UA) or non-deposition area (NDA) of the deposition mask 100 is less than about 15㎛, it may be difficult to form a through hole of uniform size because the thickness of the metal plate is thin. .

The height (H1) of the small hole of the first through hole (TH1) of the deposition mask 100 may be about 0.2 to about 0.4 times the maximum thickness (T1) measured at the center of the first rib (RB1). there is. For example, the maximum thickness T1 measured at the center of the first rib RB1 is about 7㎛ to about 9㎛, and one surface of the deposition mask 100 and the communication of the first through hole TH1 The height (H1) between parts may be about 1.4 μm to about 3.5 μm. The height H1 of the small hole of the first through hole TH1 of the deposition mask 100 may be about 3.5 μm or less. For example, the height of the small hole V1 of the first through hole TH1 may be about 0.1 μm to about 3.4 μm. For example, the height of the small hole V1 of the first through hole TH1 of the deposition mask 100 may be about 0.5 μm to about 3.2 μm. For example, the height of the small hole V1 of the first through hole TH1 of the deposition mask 100 may be about 1 μm to about 3 μm. Here, the height can be measured in the thickness measurement direction, that is, the depth direction, of the deposition mask 100, and is the height measured from one surface of the deposition mask 100 to the communicating portion of the first through hole TH1. You can. In detail, it may be measured in the z-axis direction, which is 90 degrees from the horizontal direction (x direction) and vertical direction (y direction) described above in the plan views of FIGS. 4 to 8.

If the height between one surface of the deposition mask 100 and the communicating part of the first through hole TH1 is greater than about 3.5㎛, a shadow effect occurs in which the deposition material spreads to an area larger than the area of the through hole during OLED deposition. Deposition defects may occur due to the effect.

In addition, the hole diameter W4 on one surface where the small hole V1 of the first through hole TH1 of the deposition mask 100 is formed, the small hole V1 of the first through hole TH1, and the small hole V1 of the first through hole TH1 of the deposition mask 100 The hole diameters W5 in the communication portion, which is the boundary between the facing holes V2 of the first through hole TH1, may be similar to or different from each other. The hole diameter W4 on one surface where the small hole V1 of the first through hole TH1 of the deposition mask 100 is formed may be larger than the hole diameter W5 at the communication portion. For example, the difference between the hole diameter W4 on one side of the first through hole TH1 of the deposition mask 100 and the hole diameter W5 in the communication portion may be about 0.01 μm to about 1.1 μm. there is. For example, the difference between the hole diameter W4 on one side of the deposition mask and the hole diameter W5 on the communication part may be about 0.03 μm to about 1.1 μm. For example, the difference between the hole diameter W4 on one surface of the deposition mask and the hole diameter W5 on the communication portion may be about 0.05 μm to about 1.1 μm.

If the difference between the hole diameter (W4) of the first through hole (TH1) on one side of the deposition mask 100 and the hole diameter (W5) in the communication part is greater than about 1.1㎛, deposition defects due to the shadow effect. This can happen.

In addition, one end (E1) of the facing hole (V2) of the first through hole (TH1) located on the other surface opposite to the one surface of the deposition mask 100, and the small hole (V1) and the facing hole (V2) The inclination angle (θ1) connecting one end (E2) of the communication part between the two may be 40 degrees to 55 degrees. Accordingly, a high-resolution deposition pattern of 400 PPI or higher, specifically 500 PPI or higher, can be formed, and at the same time, the first island portion IS1 can be present on the other side of the deposition mask 100.

In addition, the hole diameter W4 on one surface where the small hole V1 of the first through hole TH1 of the deposition mask 100 is formed, the small hole V1 of the first through hole TH1, and the small hole V1 of the first through hole TH1 of the deposition mask 100 The hole diameters W5 in the communication portion, which is the boundary between the facing holes V2 of the first through hole TH1, may be similar to or different from each other. The hole diameter W4 on one surface where the small hole V1 of the first through hole TH1 of the deposition mask 100 is formed may be larger than the hole diameter W5 at the communication portion. For example, the difference between the hole diameter W4 on one side of the first through hole TH1 of the deposition mask 100 and the hole diameter W5 in the communication portion may be about 0.01 μm to about 1.1 μm. there is. For example, the difference between the hole diameter W4 on one side of the deposition mask and the hole diameter W5 on the communication part may be about 0.03 μm to about 1.1 μm. For example, the difference between the hole diameter W4 on one surface of the deposition mask and the hole diameter W5 on the communication portion may be about 0.05 μm to about 1.1 μm.

In addition, the hole diameter W6 on one surface where the small hole V1 of the second through hole TH2 of the deposition mask 100 is formed, the small hole V1 of the second through hole TH1, and the small hole V1 of the second through hole TH1 of the deposition mask 100 The hole diameters W7 in the communication portion, which is the boundary between the facing holes V2 of the second through hole TH2, may be similar to or different from each other. The hole diameter W6 on one side where the small hole V1 of the second through hole TH1 of the deposition mask 100 is formed may be larger than the hole diameter W7 at the communication portion. For example, the difference between the hole diameter W6 on one side of the second through hole TH2 of the deposition mask 100 and the hole diameter W7 in the communication portion may be about 0.01 μm to about 1.1 μm. there is. For example, the difference between the hole diameter W6 on one side of the deposition mask and the hole diameter W7 in the communication portion may be about 0.03 μm to about 1.1 μm. For example, the difference between the hole diameter W6 on one surface of the deposition mask and the hole diameter W7 in the communication portion may be about 0.05 μm to about 1.1 μm. Meanwhile, the hole diameter W7 in the communication portion between the small hole and the large hole of the second through hole TH2 is the hole diameter W5 in the communication portion between the small hole and the large hole of the first through hole TH1. It can be smaller than

According to an embodiment according to the present invention, a mask pattern having a uniform pore diameter can be formed on a deposition mask.

In addition, according to an embodiment according to the present invention, when reducing the through-hole size in the outer area compared to the through-hole size in the effective area located at the center of the effective part of the deposition mask, during tension welding before deposition during the manufacturing process of the OLED panel, It is possible to solve the phenomenon of the active part being separated from the non-active part and falling off the deposition mask.

Additionally, according to an embodiment of the present invention, no through hole is located in a non-effective part that is not involved in deposition. Accordingly, it is possible to secure a volume capable of increasing the rigidity of the deposition mask on the non-effective portion.

In addition, according to an embodiment according to the present invention, the outer area of the effective part is arranged to surround the upper and lower sides as well as the left and right sides of the effective area located in the center of the effective part. Accordingly, the through hole of the outer area is located around the left, right, upper, and lower sides of the effective area. Additionally, according to an embodiment of the present invention, a through hole in the outer area and a through hole in the effective area are connected through one rib. At this time, the thickness of the rib is smaller than the thickness of the metal plate that is the raw material. That is, there is no non-etched area in the effective part including the effective area and the outer area. Accordingly, the present invention can solve the radical concentration problem that occurs between the etched area and the non-etched area in the deposition mask. Therefore, the deposition mask according to the embodiment can have more precise and uniform through holes, and can uniformly deposit OLED pixel patterns with a resolution of 400 PPI or more, a high resolution of 500 PPI or more in detail, and even an ultra-high resolution of 800 PPI or more.

FIG. 11 is a plan view of an effective portion and an outer region of a deposition mask according to a second embodiment.

The deposition mask in FIG. 11 is different from the deposition mask in FIG. 5 in the second through hole TH2 formed in the outer area OA. Accordingly, hereinafter, only the second through hole TH2 formed in the outer area OA of FIG. 11 in contrast to FIG. 5 will be described.

Referring to FIG. 11, the outer area OA may include a plurality of second through holes TH2. At this time, the second through holes TH2 may be arranged in a row or staggered depending on the direction. For example, the second through holes TH2 may be arranged in a row along the vertical and horizontal axes, and may be arranged in a row along the vertical or horizontal axis.

The deposition mask 100 may include a plurality of second through holes TH2 in the outer area OA. At this time, the plurality of second through holes TH2 may have a circular shape. In detail, the second through hole (TH2) may have a horizontal diameter (Cx2) and a vertical diameter (Cy2), and may have a horizontal diameter (Cx2) perpendicular to the horizontal diameter (Cx2) of the second through hole (TH1). The diameter (Cy2) values of the directions may correspond to each other. At this time, the horizontal diameter (Cx2) and the vertical diameter (Cy2) of the second through hole (TH2) are the horizontal diameter (Cx1) and the vertical diameter (Cx1) of the first through hole (TH1). It may be the same as Cy1).

The second through holes TH2 may be arranged in a row according to direction. For example, the second through holes TH2 may be arranged in a row along the vertical and horizontal axes.

In detail, the 2-1 through hole TH2-1 and the 2-2 through hole TH2-2 within the outer area OA may be arranged in a line on the horizontal axis, and the 2-3 through hole ( TH2-3) and the 2-4th through hole (TH2-4) may be arranged in a row on the longitudinal axis.

In addition, the 2-1 through hole TH2-1 and the 2-3 through hole TH2-3 in the outer area OA may be arranged in line on the longitudinal axis, and the 2-2 through hole ( TH2-2) and the 2-4th through hole TH2-4 may be arranged in a line on the horizontal axis.

That is, when the second through holes TH2 are arranged in a row on the vertical and horizontal axes, a second island is formed between two adjacent second through holes TH2 in the diagonal direction that intersects both the vertical and horizontal axes. Parts (IS2-1, IS2-2) may be located. That is, the second island portions IS2-1 and IS2-2 may be located between two adjacent second through-holes TH2 located diagonally from each other.

For example, the second island portion IS2 may be disposed between the 2-1st through hole TH2-1 and the 2-4th through hole TH2-4. Additionally, a second island portion IS2 may be disposed between the 2-2 through hole TH2-2 and the 2-3 through hole TH2-3. The second island portion IS1 may be positioned in an inclination angle direction of approximately +45 degrees and an inclination angle direction of approximately -45 degrees based on the horizontal axis crossing the two adjacent second through holes, respectively. Here, the inclination angle direction around ±45 may mean the diagonal direction between the horizontal axis and the vertical axis, and the inclination angle in the diagonal direction may be measured on the same plane of the horizontal axis and the vertical axis.

At this time, the second island portion IS2 includes a 2-1 island portion IS2-1 disposed between a plurality of second through holes TH2, a second through hole TH2, and a first through hole. It includes a 2-2 island portion (IS2-2) disposed between (TH1).

The diameter of the second through hole TH2 may be the width between the communication portion CA connecting the small hole of the second through hole TH2 and the large hole. In detail, the diameter of the second through hole TH2 can be measured at a point where the end of the etched surface in the small hole V1 and the end of the etched surface in the large hole V2 meet. The diameter of the second through hole TH2 may be measured in any one of the horizontal, vertical, and diagonal directions. The diameter of the second through hole TH2 measured in the horizontal direction may be 33 μm or less. Alternatively, the diameter of the second through hole TH2 measured in the vertical direction may be 33 μm or less. Alternatively, the diameter of the second through hole TH2 may be an average value of values measured in the horizontal, vertical, and diagonal directions.

Therefore, the deposition mask 100 according to the embodiment can implement QHD level resolution. For example, the diameter of the second through hole TH2 may be about 15 μm to about 33 μm. For example, the diameter of the second through hole TH2 may be about 19 μm to about 33 μm. For example, the diameter of the second through hole TH2 may be about 20 μm to about 27 μm. If the diameter of the second through hole TH2 is greater than about 33㎛, it may be difficult to achieve a resolution of 500PPI or higher. Meanwhile, if the diameter of the second through hole TH2 is less than about 15㎛, deposition defects may occur.

Meanwhile, the first island IS1 and the second island IS2 may have different sizes. This means that the diameter of the first through hole (TH1) and the diameter of the second through hole (TH2) are the same, but the spacing between the plurality of first through holes (TH1) and the plurality of second through holes This is because the spacing between (TH2) is different.

In other words, the distance between two adjacent first through holes TH1 among the plurality of first through holes TH1 in the horizontal direction may be about 48 μm or less. For example, the pitch between two adjacent first through holes TH1 among the plurality of first through holes TH1 in the horizontal direction may be about 20 μm to about 48 μm. For example, the pitch between two adjacent first through holes TH1 among the plurality of first through holes TH1 in the horizontal direction may be about 30 μm to about 35 μm. Here, the spacing may mean the spacing between the centers of two adjacent 1-1 through holes (TH1-1) and the centers of the 1-2 through holes (TH1-2) in the horizontal direction. Alternatively, the spacing may mean the spacing between the centers of two adjacent first islands in the horizontal direction.

Differently, the gap between two adjacent second through holes (TH1) among the plurality of second through holes (TH2) in the horizontal direction is about 48㎛ or less, and the distance between the plurality of adjacent first through holes (TH1) is about 48㎛ or less. greater than the gap. For example, the spacing (pitch) between two adjacent second through holes (TH2) among the plurality of second through holes (TH2) in the horizontal direction is about 20㎛ to about 48㎛, and the plurality of adjacent first through holes (TH2) are It is larger than the gap between holes (TH1). For example, the spacing (pitch) between two adjacent second through holes (TH2) among the plurality of second through holes (TH2) in the horizontal direction is about 30㎛ to about 35㎛, and the plurality of adjacent first through holes (TH2) are It is larger than the gap between holes (TH1).

That is, in the second embodiment of the present invention, the width of the first through hole (TH1) and the width of the second through hole (TH2) are the same. However, in order to make the area occupied by the second through hole (TH2) smaller than the area occupied by the first through hole (TH1) within the same area, the gap between the second through holes (TH2) is set to the second through hole (TH2). 1 It was made larger than the gap between through holes (TH1).

In other words, as the spacing between the second through holes TH2 increases, the width of the rib and the width of the island portion between the second through holes TH2 also increase as the spacing increases. Therefore, even if over-etching occurs in the outer area (OA), it can be covered by the width of the raised rib and island portion, and the resulting separation problem between the effective area (AA) and the outer area (OA) can be solved. do.

FIG. 12 is a plan view of an effective portion and an outer region of a deposition mask according to a third embodiment.

The deposition mask in FIG. 12 is different from the deposition mask in FIG. 5 in the second through hole TH2 formed in the outer area OA. Accordingly, hereinafter, only the second through hole TH2 formed in the outer area OA of FIG. 12 in contrast to FIG. 5 will be described.

The outer area (OA) according to the third embodiment of the present invention may include a 1-1 outer area (OA1-1) and a 1-2 outer area (OA1-2). That is, three rows of second through holes TH2 may be formed within the outer area OA. At this time, among the three rows, one row adjacent to the effective area (AA) is defined as the 1-1 outer area (OA1-1), and the remaining outer area (OA) excluding the 1-1 outer area (OA1-1) is defined as the 1-1 outer area (OA1-1). ) can be defined as the 1-2 outer area (OA1-2). In other words, in the third embodiment, the outer area (OA) can be divided into an area adjacent to the effective area (AA) and an area surrounding the area adjacent to the effective area (AA).

And, in the third embodiment, a through hole formed in the outer area OA is formed, a second through hole TH2 formed in the 1-1 outer area OA1-1, and a second through hole TH2 formed in the outer 1-2 outer area OA1-1. It is distinguished by a third through hole TH3 formed in the area OA1-2.

The deposition mask 100 may include a plurality of second through holes TH2 in the 1-1 outer area OA1-1. At this time, the second through holes TH2 may be arranged in a row or staggered depending on the direction. For example, the second through holes TH2 may be arranged in a row along the vertical and horizontal axes, and may be arranged in a row along the vertical or horizontal axis.

Additionally, the deposition mask 100 may include a plurality of third through holes TH3 in the 1-2 outer area OA1-2. At this time, the third through holes TH3 may be arranged in a row or staggered depending on the direction. For example, the third through holes TH3 may be arranged in a row along the vertical and horizontal axes, and may be arranged in a row along the vertical or horizontal axis.

The deposition mask 100 may include a plurality of second through holes TH2 in the 1-1 outer area OA1-1. At this time, the plurality of second through holes TH2 may have a circular shape. In detail, the second through hole (TH2) may have a horizontal diameter (Cx2) and a vertical diameter (Cy2), and may have a horizontal diameter (Cx2) perpendicular to the horizontal diameter (Cx2) of the second through hole (TH1). The diameter (Cy2) values of the directions may correspond to each other. At this time, at least one of the horizontal diameter (Cx2) and the vertical diameter (Cy2) of the second through hole (TH2) is the horizontal diameter (Cx1) of the first through hole (TH1) and It may be smaller than at least one diameter among the vertical diameters (Cy1).

The second through holes TH2 may be arranged in a row according to direction. For example, the second through holes TH2 may be arranged in a row along the vertical and horizontal axes.

In detail, the second through holes TH2 within the 1-1 outer area OA1-1 may be arranged in a line on the horizontal axis, and the second through holes TH2 may be arranged in a line on the vertical axis. . At this time, although it is said in the drawing that the 1-1 outer area (OA1-1) includes one row of second through holes (TH2), in reality, the 1-1 outer area (OA1-1) is also included on the upper and lower sides of the effective area (AA). OA1-1) is disposed, and second through holes TH2 may be disposed in a row along the horizontal axis. Additionally, the number of rows or columns of the second through holes TH2 disposed in the 1-1 outer area OA1-1 may be increased.

Additionally, the third through holes TH3 within the 1-2 outer area OA1-2 may be arranged in a line on the horizontal axis, and the third through holes TH3 may be arranged in a line on the vertical axis. . In addition, when the third through holes TH3 are arranged in a row on the vertical and horizontal axes, a fourth island is formed between two adjacent third through holes TH3 in the diagonal direction that intersects both the vertical and horizontal axes. Division (IS4) may be located. That is, the fourth island portion IS4 may be located between two adjacent third through holes TH3 located diagonally from each other.

In addition, a second island portion IS2 is formed between the first through hole TH1 formed in the effective area AA and the second through hole TH2 formed in the 1-1 outer area OA1-1. can be located

In addition, a third island is formed between the second through hole (TH2) formed in the 1-1 outer area (OA1-1) and the third through hole (TH3) formed in the 1-2 outer area (OA1-2). A portion (IS3) may be located.

Additionally, each of the first to fourth island portions IS1, IS2, IS3, and IS4 has different sizes. At this time, the gap between adjacent first through holes (TH1), the gap between adjacent second through holes (TH2), the gap between adjacent third through holes (TH3), the adjacent first through holes (TH1) and The spacing between the second through holes TH2 and the spacing between the adjacent second through holes TH2 and the third through holes TH3 may be the same.

At this time, the size of each of the second through holes TH2 is smaller than the size of the first through hole TH1. That is, the width of the communication part of the second through hole TH2 is smaller than the width of the communication part of the first through hole TH1. That is, the horizontal width (Cx2) of the second through hole (TH2) is smaller than the horizontal width (Cx1) of the first through hole (TH1). That is, the vertical width Cy2 of the second through hole TH2 is smaller than the vertical width Cy1 of the first through hole TH1.

Additionally, the size of each of the third through holes TH3 is smaller than the size of the second through hole TH2. That is, the width of the communication part of the third through hole TH3 is smaller than the width of the communication part of the second through hole TH2. That is, the horizontal width (Cx3) of the third through hole (TH3) is smaller than the horizontal width (Cx2) of the second through hole (TH2). That is, the vertical width Cy3 of the third through hole TH3 is smaller than the vertical width Cy2 of the second through hole TH2.

That is, the size of the second through hole TH2 is smaller than the size of the first through hole TH1 and larger than the size of the third through hole TH3. That is, the width of the communication part of the second through hole TH2 is smaller than the width of the communication part of the first through hole TH1 and larger than the width of the communication part of the third through hole TH3. That is, the horizontal width (Cx2) of the second through hole (TH2) is smaller than the horizontal width (Cx1) of the first through hole (TH1), and the horizontal width (Cx2) of the third through hole (TH3) is smaller than the horizontal width (Cx2) of the second through hole (TH2). It is larger than the width in direction (Cx3). That is, the vertical width Cy2 of the second through hole TH2 is smaller than the vertical width Cy1 of the first through hole TH1, and the vertical width Cy2 of the third through hole TH3 is smaller than the vertical width Cy2 of the second through hole TH2. It is larger than the width in direction (Cy3).

In other words, the width of the through hole formed in the outer area OA with the effective area AA as the center may gradually decrease as it moves away from the outermost area of the effective area AA. Accordingly, the width of the through hole located at the outermost part of the outer area OA, that is, the through hole located in the area closest to the non-etched area, may be the smallest.

As described above, in the third embodiment, the outer area (OA) is divided into a plurality of areas, and the width of the through hole formed in the outer area (OA) becomes gradually smaller as it moves away from the effective area (AA). there is.

Meanwhile, in FIG. 12, at least one of the second through holes TH2 and the third through holes TH3 formed in the 1-1 outer area OA1-1 and the 1-2 outer area OA1-2 is a half hole. It can be formed as a nicknamed half-nicknamed part.

Preferably, the second through hole (TH2) and the third through hole (TH3) formed in the 1-1 outer area (OA1-1) and the 1-2 outer area (OA1-2) do not include carding holes. It can be formed as a half-nicknamed part of only the face-to-face ball.

In addition, the second through hole (TH2) is formed in the 1-1 outer area (OA1-1) as described above, and the third through hole (TH3) is formed only in the 1-2 outer area (OA1-2). ) Instead, it can be formed as a half-named portion of only the large-faced hole that does not include the above-mentioned small-sided hole.

Additionally, the radical concentration phenomenon caused by the etching solution occurs in the etched area closest to the non-etched area. Accordingly, the second through hole TH2 is formed in the 1-1 outer area OA1-1 as described above. And, a half-nicknamed portion for only the face hole is formed in the outermost area of the 1-2 outer area (OA1-2). Additionally, the third through hole TH3 may be formed in the remaining areas excluding the outermost area of the 1-2 outer area OA1-2.

13 and 14 are diagrams showing a method of manufacturing the deposition mask 100 according to an embodiment.

Referring to FIG. 13, the method of manufacturing the deposition mask 100 according to the embodiment includes preparing a metal plate 10, placing a photoresist layer on the metal plate 10 to form the first and second through holes TH1. , TH2) and removing the photoresist layer to form a deposition mask 100 including the first through hole TH1 and the second through hole TH2.

First, the metal plate 10, which is a basic material for manufacturing the deposition mask 100, is prepared (S410).

The metal plate 10 may include a metal material. For example, the metal plate 10 may include nickel (Ni). In detail, the metal plate 10 may include iron (Fe) and nickel (Ni). In more detail, the metal plate 10 may include iron (Fe), nickel (Ni), oxygen (O), and chromium (Cr). In addition, the metal plate 10 contains a small amount of carbon (C), silicon (Si), sulfur (S), phosphorus (P), manganese (Mn), titanium (Ti), cobalt (Co), copper (Cu), It may further include at least one element selected from silver (Ag), vanadium (V), niobium (Nb), indium (In), and antimony (Sb). The Invar is an alloy containing iron and nickel and is a low thermal expansion alloy with a thermal expansion coefficient close to 0. In other words, the Invar has a very small thermal expansion coefficient, so it is used in precision parts and precision devices such as masks. Accordingly, the deposition mask manufactured using the metal plate 10 can have improved reliability, prevent deformation, and increase its lifespan.

The metal plate 10 may contain about 60% by weight to about 65% by weight of iron, and about 35% by weight to about 40% by weight of nickel. In detail, the metal plate 10 may contain about 63.5 wt% to about 64.5 wt% of iron, and about 35.5 wt% to about 36.5 wt% of nickel. In addition, the metal plate 10 includes carbon (C), silicon (Si), sulfur (S), phosphorus (P), manganese (Mn), titanium (Ti), cobalt (Co), copper (Cu), and silver ( It may further include about 1% by weight or less of at least one element selected from Ag), vanadium (V), niobium (Nb), indium (In), and antimony (Sb). The components, content, and weight percent of the metal plate 10 are determined by selecting a specific area (a*b) on the plane of the metal plate 10, and determining the specimen (a*) corresponding to the thickness (t) of the metal plate 10. b*t) can be confirmed by sampling and dissolving it in a strong acid, etc. and examining the weight percent of each component. However, the examples are not limited to this, and the weight percent composition can be investigated in various ways to confirm the composition of the metal plate.

The metal plate 10 may be manufactured by cold rolling. For example, the metal plate 10 may be formed through melting, forging, hot rolling, normalizing, primary cold rolling, primary annealing, secondary cold rolling, and secondary annealing processes, and through these processes, the metal plate 10 may be formed to a thickness of about 30㎛. It may have the following thickness. Alternatively, the metal plate 10 may have a thickness of about 30 μm or less through an additional thickness reduction process after the above process.

In addition, the step of preparing the metal plate 10 (S410) may further include a thickness reduction step depending on the target thickness of the metal plate 10. The thickness reduction step may be a step of reducing the thickness of the metal plate 10 by rolling and/or etching.

For example, to manufacture a deposition mask to achieve a resolution of 400 PPI or higher, a metal plate 10 with a thickness of approximately 30㎛ may be required, and to manufacture a deposition mask to implement a resolution of 500PPI or higher, a metal plate 10 may be required to be approximately 20㎛ thick. A metal plate 10 with a thickness of about 30 μm may be required, and in order to manufacture a deposition mask capable of realizing a resolution of 800 PPI or more, a metal plate 10 with a thickness of about 15 μm to about 20 μm may be required.

Additionally, the step of preparing the metal plate 10 may optionally further include a surface treatment step. In detail, nickel alloys such as Invar may have a high etching rate at the beginning of etching, so the etch factor of the small hole V1 of each of the first through hole TH1 and the second through hole TH2 may decrease. In addition, when etching to form the facing hole (V2) of each of the first through hole (TH1) and the second through hole (TH2), the photoresist layer for forming the facing hole (V2) is peeled off by side etching of the etchant. It can be. Accordingly, it may be difficult to form fine-sized through holes, and it may be difficult to form the through holes uniformly, which may reduce manufacturing yield.

Therefore, a surface treatment layer for surface modification that varies in composition, content, crystal structure, and corrosion rate can be disposed on the surface of the metal plate 10. Here, surface modification may mean a layer made of various materials disposed on the surface to improve the etch factor.

That is, the surface treatment layer is a layer to prevent rapid etching on the surface of the metal plate 10, and may be a barrier layer with an etching rate slower than that of the metal plate 10. The surface treatment layer may have a different crystal plane and crystal structure from the metal plate 10. For example, as the surface treatment layer contains different elements from those of the metal plate 10, its crystal plane and crystal structure may be different.

For example, in the same corrosion environment, the surface treatment layer may have a different corrosion potential from the metal plate 10. For example, when treated with the same etching solution at the same temperature for the same time, the surface treatment layer may have a different corrosion current or corrosion potential from that of the metal plate 10.

The metal plate 10 may include a surface treatment layer or surface treatment portion on one side and/or both sides, the entire surface, and/or the effective area. The surface treatment layer or surface treatment portion may contain elements different from those of the metal plate 10 or may contain a metal element with a slow corrosion rate in a greater amount than that of the metal plate 10 .

Next, a step of forming a first through hole (TH1) and a second through hole (TH2) by disposing a photoresist layer on the metal plate 10 may be performed.

For this purpose, a first photo resist is applied on one side of the metal plate 10 to form the small-faced hole V1 of the first through hole TH1 and the second through hole TH2 on the one side of the metal plate 10. The layer (PR1) can be placed. The first photoresist layer PR1 may be exposed and developed to form a patterned first photoresist layer PR1 on one surface of the metal plate 10 . That is, a first photoresist layer PR1 including an open portion can be formed on one surface of the metal plate. Additionally, an etch-stop layer, such as a coating layer or a film layer, may be disposed on the other side of the metal plate 10, which is opposite to one side of the metal plate 10.

Subsequently, the open portion of the patterned first photoresist layer PR1 may be half-etched to form a first groove on one surface of the metal plate 10. The open portion of the first photoresist layer PR1 may be exposed to an etchant or the like, and etching may occur in an open portion of one surface of the metal plate 10 where the first photoresist layer PR1 is not disposed.

The step of forming the first groove may be a step of etching the metal plate 10 with a thickness (T1) of about 20 μm to about 30 μm until the thickness becomes about half. The depth of the first groove formed through this step may be about 10㎛ to 15㎛. That is, the thickness (T2) of the metal plate measured at the center of the first groove formed after this step may be about 10 μm to about 15 μm.

The step of forming the first groove (S430) may be a step of forming the groove by anisotropic etching or a semi-additive process (SAP). In detail, an anisotropic etching or semi-addition method may be used to half-etch the open portion of the first photoresist layer PR1. Accordingly, the etching speed of the first groove formed through half etching in the depth direction (direction b) may be faster than the speed of side etching (direction a) compared to isotropic etching.

The etch factor of the carding hole V1 may be 2.0 to 3.0. For example, the etch factor of the small hole V1 may be 2.1 to 3.0. For example, the etch factor of the small hole V1 may be 2.2 to 3.0. Here, the etching factor is the depth of the etched small hole (B)/width (A) of the photoresist layer extending from the island portion (IS) on the small hole and protruding toward the center of the through hole (TH) (Etching Factor = B/A). The A refers to the average value of the width of one side of the photoresist layer protruding on the one surface hole and the width of the other side opposite to the one side.

Subsequently, a second photoresist layer PR2 may be disposed on the other surface of the metal plate 10. Subsequently, the patterned second photoresist layer PR2 may be disposed on the other side of the metal plate 10 by exposing and developing the second photoresist layer PR2 (S440). That is, the second photoresist layer PR2 including the first open part OR1 and the second open part OR2 can be formed on the other surface of the metal plate 10. Additionally, an etch-stop layer, such as a coating layer or a film layer, may be disposed on one surface of the metal plate 10 to prevent etching.

The first and second open portions (OR1, OR2) of the second photoresist layer (PR2) may be exposed to an etchant, etc., so that the second open portion (OR1, OR2) of the second photoresist layer (PR2) is not disposed on the other side of the metal plate 10. Etching may occur in openings 1 and 2 (OR1, OR2). The other side of the metal plate 10 may be etched by anisotropic etching or isotropic etching.

As the first and second open portions (OR1, OR2) of the second photoresist layer (PR2) are etched, the first groove on one surface of the metal plate (10) is connected to the facing hole (V2) and forms a first through hole, respectively. A hole TH1 and a second through hole TH2 may be formed. That is, the large hole formed by etching through the first open portion OR1 may be connected to the small hole to form the first through hole TH1. Additionally, the large hole formed by etching through the second open portion OR2 may be connected to the small hole to form a second through hole TH2. At this time, the first open part OR1 is located in an area corresponding to the effective area AA of the other surface of the metal plate 10, and the second open part OR2 is located in an outer area of the other surface of the metal plate 10. It is located in the area corresponding to (OA). Also, the width of the first open part (OR1) is larger than the width of the second open part (OR2).

Alternatively, the width of the first open portion (OR1) and the width of the second open portion (OR2) may be the same, but the distance between the plurality of first open portions (OR1) may be the same as the width of the plurality of second open portions (OR2). ) may be different from the interval between them. That is, the spacing between the plurality of first open parts OR1 may be narrower than the spacing between the plurality of second open parts OR2.

Depending on the size and location of the second open portion OR2, the area of the upper surface of the second island portion IS2 may change. For example, as the size of the second open portion OR2 decreases, the area etched through the second open portion decreases, and the upper surface area of the second island portion IS2 may increase.

Additionally, the sizes of the second open portions may be different. For example, the size of the second open portion OR2 located in the outer area OA adjacent to the effective areas AA1, AA2, and AA3 is the size of the second through hole TH2 located in the area adjacent to the non-etched area. It can be bigger than the size.

Additionally, the size of the second open portion may decrease as it becomes farther away from the effective portion. Accordingly, the width of the second through hole TH2 may gradually decrease as it moves away from the effective area AA. Accordingly, the area of the second island IS2 may gradually increase from the effective area AA1, AA2, and AA3 to the unactive area UA.

The step of forming the first through hole and the second through hole includes forming a second groove for forming the large hole (V2) after forming the first groove for forming the small hole (V1). This may be a step of forming the first and second through holes TH1 and TH2.

Differently, the step of forming the first and second through holes (TH1, TH2) includes forming the first groove for forming the small hole (V1) after the step of forming the second groove for forming the large hole (V2). The step of forming a groove may be performed to form the first and second through holes TH1 and TH2.

Alternatively, forming the first and second through holes TH1 and TH2 includes forming a first groove for forming the small hole V1 and a second groove for forming the large hole V2. The step of forming the groove may be performed simultaneously to form the first and second through holes TH1 and TH2.

Next, the first photoresist layer (PR1) and the second photoresist layer (PR2) are removed to form a large hole (V2) formed on one side and a small hole (V1) formed on the other side opposite to the one side. ), forming a deposition mask 100 including first and second through holes (TH1, TH2) formed by a communication portion where the boundaries of the large hole (V2) and the small hole (V1) are connected. The deposition mask 100 may be formed through .

The deposition mask 100 formed through the above steps may include the same material as the metal plate 10. For example, the deposition mask 100 may include a material of the same composition as the metal plate 10. Additionally, the island portion IS of the deposition mask 100 may include the surface treatment layer described above.

The maximum thickness of the deposition mask 100 formed through the above steps at the center of the first rib RB1 formed in the effective area AA may be smaller than the maximum thickness in the non-effective area UA that has not been etched. For example, the maximum thickness at the center of the first rib RB1 may be about 15㎛. For example, the maximum thickness at the center of the first rib RB1 may be less than about 10 μm. However, the maximum thickness of the non-effective portion (UA) of the deposition mask 100 may be about 20 μm to about 30 μm, and may be about 15 μm to about 25 μm. That is, the maximum thickness at the non-effective portion (UA) of the deposition mask 100 may correspond to the thickness of the metal plate 10 prepared in the step of preparing the metal plate 10.

Figures 15 and 16 are diagrams showing deposition patterns formed through a deposition mask according to an embodiment.

Referring to FIG. 15, in the deposition mask 100 according to the embodiment, the height H1 between one surface of the deposition mask 100 on which the small hole V1 is formed and the communication portion may be about 3.5 μm or less. For example, the height H1 may be about 0.1 μm to about 3.4 μm. For example, the height H1 may be about 0.5 μm to about 3.2 μm. For example, the height H1 may be about 1 μm to about 3 μm.

Accordingly, the distance between one surface of the deposition mask 100 and the substrate on which the deposition pattern is disposed can be short, thereby reducing deposition defects due to the shadow effect. For example, when forming R, G, and B patterns using the deposition mask 100 according to the embodiment, defects in which different deposition materials are deposited in the area between two adjacent patterns can be prevented. In detail, as shown in FIG. 13, when the patterns are formed in the order of R, G, and B from the left, it is possible to prevent the R and G patterns from being deposited due to a shadow effect in the area between the R and G patterns. You can.

Additionally, the deposition mask 100 according to the embodiment can reduce the size of the first island portion IS1 in the effective portion. In detail, the area of the upper surface of the first island IS1, which is the non-etched surface, can be reduced, so that when organic materials are deposited, the organic materials can easily pass through the first through hole TH1, thereby improving deposition efficiency.

Additionally, the area of the first island IS1 may decrease from the center of the active area AA1, AA2, and AA3 toward the unactive area UA. Accordingly, organic materials can be smoothly supplied to the first through-hole located at the edge of the effective area (AA1, AA2, AA3), thereby improving deposition efficiency and improving the quality of the deposition pattern.

The features, structures, effects, etc. described in the above-described embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. illustrated in each embodiment can be combined or modified and implemented in other embodiments by a person with ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to such combinations and modifications should be construed as being included in the scope of the present invention.

In addition, although the description has been made focusing on the embodiments above, this is only an example and does not limit the present invention, and those skilled in the art will understand the above examples without departing from the essential characteristics of the present embodiments. You will be able to see that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. And these variations and differences in application should be construed as being included in the scope of the present invention as defined in the attached claims.

Claims (13)

In a metal deposition mask for OLED pixel deposition,
The deposition mask includes an effective part and a non-effective part other than the effective part,
The effective portion includes an effective area and an outer area surrounding the effective area,
The effective area includes a plurality of first carding holes formed on the first surface, a plurality of first facing holes formed on the second surface, and where the first carding holes and the first facing holes meet. It includes a plurality of first through holes including a first communication portion, and a first island portion between the plurality of first through holes,
The outer area includes a plurality of second carding holes formed on the first surface, a plurality of second facing holes formed on the second surface, and the second carding holes and the second facing holes. A plurality of second through holes including second communicating portions meeting each other, and a second island portion between the plurality of second through holes,
A deposition mask wherein the size of the pore of the first communication part of the first through hole is larger than the size of the pore of the second communication part of the second through hole. According to paragraph 1,
A mask for deposition, wherein the pore diameter of the plurality of first small holes formed on the first surface of the effective area is larger than the pore diameter of a first communication portion where the first small holes and the first large pores meet. According to clause 2,
The pore diameter of the plurality of second small holes formed on the first surface of the outer area is larger than the pore diameter of the second communication portion where the second small holes and the second facing holes meet. According to claim 1,
The deposition mask further includes at least one third rib disposed between the first through hole in the effective area and the second through hole in the outer area. According to claim 1,
A mask for deposition, wherein no non-etched area exists in the effective part including the effective area and the outer area. According to paragraph 1,
The distance between the centers of the second through holes is,
A deposition mask that is larger than the spacing between centers of the first through holes. According to paragraph 1,
The effective area includes a first rib formed as the plurality of first facing holes come into contact with each other,
The outer region includes a second rib formed as the plurality of second facing holes come into contact with each other,
A deposition mask wherein the thickness of the second rib is smaller than the thickness of the non-effective portion and larger than the thickness of the first rib. In clause 7,
At the boundary between the effective area and the outer area, it further includes a third rib formed as the first facing hole and the second facing hole come into contact with each other,
A deposition mask in which the thickness of the third rib is smaller than the thickness of the non-effective portion. According to clause 8,
A deposition mask wherein the third rib has a thickness greater than the first rib and is smaller than the second rib. According to paragraph 1,
Further comprising a third island portion located between the first through hole and the second through hole at the boundary between the effective area and the outer area,
A deposition mask in which the top surface area of the third island portion is larger than that of the first island portion and smaller than the top surface area of the second island portion. According to clause 10,
The third island part,
a first sub-third island portion located on the effective area;
It includes a second sub-third island portion located on the outer area,
The top surface area of the first sub-third island portion is,
A deposition mask smaller than the top surface area of the second sub-third island portion. According to paragraph 1,
The outer area is,
a first outer area located adjacent to the effective area and surrounding the effective area;
a second outer region located adjacent to the non-effective portion and surrounding the first outer region;
The second through hole is located on the first outer area,
The second outer area includes a plurality of third through holes,
A fourth island portion formed between the third through holes,
The second through hole is smaller than the first through hole and has a size larger than the third through hole. According to clause 12,
The second outer area is,
The deposition mask further includes a plurality of half-etched portions located at the outermost portion of the second outer region and including a plurality of fourth facing holes formed on the second surface.