KR20230104842A - A deposition mask - Google Patents

Abstract

The embodiment relates to a mask for deposition of a metal material for deposition of an OLED pixel, wherein the deposition mask includes a plurality of effective portions for deposition and non-effective portions other than the effective portions, and the effective portions are spaced apart in a longitudinal direction It includes a plurality of effective areas disposed, wherein the effective areas include a plurality of face holes formed on one surface of the metal material, a plurality of facing holes formed on the other surface opposite to the one surface of the metal material, the card holes and the A plurality of through holes communicating with the facing hole and an island formed on the other surface of the metal material and positioned between the through holes, wherein the facing hole includes a first inner surface extending from the through hole toward the other surface of the metal material and a second inner surface bent at an end of the first inner surface and extending toward the island portion.

Description

Deposition mask {A DEPOSITION MASK}

The present invention relates to a deposition mask capable of improving deposition efficiency when depositing an OLED pixel and a method for manufacturing the same.

Display devices are applied to and used in various devices. For example, the display device is applied to and used not only small devices such as smart phones and tablet PCs, but also large devices such as TVs, monitors, and public displays (PDs). In particular, recently, demand for ultra-high definition (UHD) of 500 pixels per inch (PPI) or more is increasing, and high-resolution display devices are being applied to small and large devices. Accordingly, interest in technology for implementing low power and high resolution is increasing.

Commonly used display devices can be largely classified into liquid crystal displays (LCDs) and organic light emitting diodes (OLEDs) according to driving methods.

LCD is a display device driven by using liquid crystal, and has a structure in which a light source including a Cold Cathode Fluorescent Lamp (CCFL) or Light Emitting Diode (LED) is disposed under the liquid crystal. A display device driven by adjusting the amount of light emitted from the light source using the liquid crystal disposed thereon.

In addition, OLED is a display device driven by using an organic material, and does not require a separate light source, and the organic material itself serves as a light source and can be driven with low power. In addition, OLED can express an infinite contrast ratio, has a response speed about 1000 times faster than LCD, and has an excellent viewing angle, so it is attracting attention as a display device that can replace LCD.

At this time, the organic material included in the light emitting layer in the OLED may be deposited on the substrate using a deposition mask called a fine metal mask (FMM).

In general, the deposition mask is made of a metal plate containing iron (Fe) and nickel (Ni), and the deposition mask may include a through hole corresponding to a pattern to be formed on the substrate. In detail, the through hole is formed penetrating one surface and the other surface of the metal plate, and an organic material is deposited after aligning the deposition mask of the substrate. Accordingly, the organic material may pass through the through hole and be deposited in a shape corresponding to the shape of the through hole and deposited at a position corresponding to the position of the through hole.

However, when organic materials are deposited on a substrate, there is a problem in that some of the organic materials do not pass through the through holes. In detail, the moving distance of the organic material moving to the through hole located at the edge of the deposition mask may be longer than the moving distance of the organic material moving to the through hole located in the central region of the deposition mask. Accordingly, a deposition defect may occur due to a small amount of the organic material supplied to the through-hole located at the edge. In addition, when depositing the organic material on the substrate, some of the organic material does not pass through the through hole and is deposited on an island portion formed between adjacent through holes. In addition, another part of the organic material does not pass through the through hole due to the island portion and is deposited on an inclined surface near the through hole.

Accordingly, there are problems in that deposition efficiency is lowered and deposition defects such as a shadow effect in which the organic material to be deposited is deposited on the substrate in an area larger than the area of the through hole.

Therefore, there is a need for a new deposition mask and a method for manufacturing the same that can solve the above problems.

In addition, a new deposition mask capable of preventing deposition defects and improving deposition efficiency when depositing OLED pixels with a resolution of 400 PPI (Pixel Per Inch) or higher, a high resolution of 500 PPI or higher in detail, and an ultra-high resolution of 800 PPI or higher, and a method for manufacturing the same this is required

Embodiments are intended to provide a deposition mask capable of preventing deposition defects when depositing organic materials on a substrate, improving deposition efficiency, and at the same time securing strength against external forces such as tensile force, and a manufacturing method thereof.

In addition, it is intended to provide a deposition mask capable of uniformly forming a high-resolution pattern of 400 PPI or more and a manufacturing method thereof.

The embodiment is a mask for deposition of a metal material for deposition of an OLED pixel,

The metal material includes invar containing iron (Fe) and nickel (Ni),

The deposition mask may include a plurality of effective portions for deposition and non-effective portions other than the effective portions.

The effective portion is arranged by a plurality of face holes disposed on one surface of the metal material, a plurality of facing holes disposed on the other surface opposite to the one surface of the metal material, and a communication portion communicating between the face holes and the facing hole. A rib disposed between the through hole and the adjacent through hole may be included.

The rib may include a first inner surface extending with a first curvature and a second inner surface extending with a second curvature from an end of the first inner surface.

The first inner surface and the second inner surface may have different radii of curvature.

A radius of curvature of the first curvature may be greater than a radius of curvature of the second curvature.

The embodiment may further include an island portion disposed on the other surface of the metal material and disposed between adjacent through holes in the first direction.

The rib may be disposed on the other surface of the metal material, be inclined in the first direction, and disposed between adjacent through-holes in a second direction different from the first direction.

The second inner surface of the rib may extend from an end of the first inner surface toward the island portion while having the second curvature.

The rib may be a region remaining after a portion of the other surface of the metal material is etched, and the rib may be disposed at a boundary between adjacent through holes in the second direction.

The rib may be located at the boundary between adjacent through holes in the second direction.

The second inner surface of the rib may extend from one end of the first inner surface.

The second inner surface of the rib may extend from both ends of the first inner surface.

The island portion may contact an end of the second inner surface of the rib.

The island portion may be disposed between adjacent ribs.

The island portion may be disposed between second inner surfaces of adjacent ribs.

The first inner surface may have a first height in a vertical direction from an end of the through hole to a starting point of the second inner surface.

The second inner surface may have a second height in a vertical direction from a starting point of the second inner surface to the island portion.

The first height may be greater than the second height.

The second height may be 1.5 μm to 3.5 μm.

The embodiment relates to a mask for deposition of a metal material for deposition of an OLED pixel, wherein the deposition mask includes a plurality of effective portions for deposition and non-effective portions other than the effective portions, and the effective portions are spaced apart in a longitudinal direction It includes a plurality of effective areas disposed, wherein the effective areas include a plurality of face holes formed on one surface of the metal material, a plurality of facing holes formed on the other surface opposite to the one surface of the metal material, the card holes and the A plurality of through holes communicating with the facing hole and an island portion formed on the other surface of the metal material and positioned between the through holes, wherein the facing hole includes a first inner surface extending from the through hole toward the other surface of the metal material and a second inner surface bent at an end of the first inner surface and extending toward the island portion.

In addition, the embodiment relates to a method of manufacturing a deposition mask for OLED pixel deposition, preparing a metal plate, disposing a first photoresist layer on one surface of the metal plate, and patterning the first photoresist layer. half-etching the patterned open portion of the first photoresist layer to form a first groove on one surface of the metal plate, disposing a second photoresist layer on the other surface opposite to one surface of the metal plate, , patterning the second photoresist layer, forming a second groove by half-etching the open portion of the patterned second photoresist layer, and forming a through hole communicating with the first groove and the second groove. forming a deposition mask including the first groove, the second groove, and the through hole by removing the first photoresist layer and the second photoresist layer; The open portion of the second photoresist layer includes a first open portion and a second open portion spaced apart from the first open portion, and a size of the first open portion is different from a size of the second open portion.

The embodiment is a mask for deposition of a metal material for deposition of an OLED pixel,

The metal material includes invar containing iron (Fe) and nickel (Ni),

The deposition mask may include a plurality of effective portions for deposition and non-effective portions other than the effective portions.

The effective part,

a plurality of faceted holes disposed on one surface of the metal material; a plurality of facing holes disposed on the other surface opposite to the one surface of the metal material; and a through hole disposed by a communication portion communicating the face hole and the face hole.

an island portion disposed on the other surface of the metal material and disposed between adjacent through holes in a first direction; and

A rib disposed on the other surface of the metal material, inclined in the first direction, and disposed between adjacent through-holes in a second direction different from the first direction.

The rib is a region remaining after a portion of the other surface of the metal material is etched, and may be disposed at a boundary between adjacent through holes in the second direction.

The rib located at the boundary between adjacent through holes in the second direction,

a first inner surface extending while having a first curvature; and

A second inner surface extending from an end of the first inner surface toward the island portion while having a second curvature may be included.

The deposition mask according to the embodiment can appropriately reduce the size of an island portion formed on one surface of the deposition mask. In detail, the facing hole formed on one surface of the deposition mask may include a first inner surface and a second inner surface, and a size of an island portion formed by the second inner surface may be reduced. Accordingly, the organic material can effectively pass through the through-hole, thereby preventing deposition defects, improving deposition efficiency, and at the same time securing strength against external force to the deposition mask, for example, tensile welding before deposition. can

Also, the deposition mask according to the embodiment may change the shape of the island portion. In detail, a shape of the island portion may be changed by the first inner surface and the second inner surface. Accordingly, when the organic material is deposited on the substrate, it is possible to prevent the organic material from being deposited on the upper surface of the island part and inner surfaces of the facing hole by the island part.

Also, in the deposition mask according to the embodiment, an area of an island located in an effective portion adjacent to an ineffective portion may be smaller than an area of an island portion located in a central region of the effective portion. Accordingly, the organic material can be smoothly supplied to the through hole formed in the edge region of the effective portion, thereby improving deposition efficiency.

That is, the deposition mask according to the embodiment can prevent deposition defects and improve deposition efficiency by adjusting the size and shape of the island portion, and can uniformly deposit an OLED pixel pattern with a resolution of 400 PPI or more.

1 to 3 are conceptual views for explaining a process of depositing an organic material on a substrate using a deposition mask according to an embodiment.
4 is a plan view of a deposition mask according to an embodiment.
5 is a plan view of an effective area in a deposition mask according to an embodiment.
6 is another plan view of an effective area in a deposition mask according to an embodiment.
7 is another plan view of an effective area in a deposition mask according to an embodiment.
FIG. 8 is a view in which the cross-sectional views taken along lines A-A' and B-B' of FIG. 5 are superimposed.
FIG. 9 is a cross-sectional view taken in the direction BB′ of FIG. 5 .
FIG. 10 is a cross-sectional view taken in the C-C″-C direction of FIG. 5;
11 and 12 are diagrams illustrating a method of manufacturing a deposition mask according to an embodiment.
13 and 14 are diagrams illustrating deposition patterns formed through a deposition mask according to an embodiment.

Hereinafter, the configuration and operation according to the present invention will be described in detail with reference to the accompanying drawings. In the description with reference to the accompanying drawings, the same reference is given to the same components regardless of reference numerals, and redundant description thereof will be omitted. Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. These terms are only used for the purpose of distinguishing one component from another.

In addition, in the description of the embodiments, each layer (film), region, pattern or structure is "on" or "under/under" the substrate, each layer (film), region, pad or pattern. The description of being formed on “under)” includes all those formed directly or through another layer. The criteria for upper/upper or lower/lower of each layer will be described based on drawings.

In addition, when a part is said to be "connected" to another part, this includes not only the case of being "directly connected" but also the case of being "indirectly connected" with another member interposed therebetween. In addition, when a part "includes" a certain component, it means that it may further include other components without excluding other components unless otherwise stated.

Hereinafter, a deposition mask according to an embodiment will be described with reference to the drawings.

1 to 3 are conceptual views for explaining a process of depositing an organic material on a substrate 300 using a deposition mask 100 according to an embodiment.

FIG. 1 is a view showing an organic material deposition apparatus including a deposition mask 100 according to an embodiment, and FIG. 2 is a diagram in which the deposition mask 100 according to an embodiment is tensioned to be mounted on a mask frame 200. It is a drawing showing that 3 is a view showing the formation of a plurality of deposition patterns on the substrate 300 through the plurality of through holes of the deposition mask 100 .

1 to 3 , the organic material deposition apparatus may include a deposition mask 100, a mask frame 200, a substrate 300, an organic material deposition container 400, and a vacuum chamber 500.

The deposition mask 100 may include metal. For example, the deposition mask may include iron (Fe) and nickel (Ni). In detail, the deposition mask 100 may include invar containing iron (Fe) and nickel (Ni). In more detail, the deposition mask 100 is made of Invar containing about 63.5 wt % to about 64.5 wt % of iron (Fe) and about 35.5 wt % to about 36.5 wt % of nickel (Ni). can include

The deposition mask 100 may include an effective portion for deposition, and the effective portion may include a plurality of through holes TH. The deposition mask 100 may be a substrate for deposition mask including a plurality of through holes TH. In this case, the through hole TH may be formed to correspond to a pattern to be formed on the substrate. The through hole TH may be formed not only in an effective area located at the center of the effective portion, but also in an outer area located outside the effective portion and surrounding the effective area. The deposition mask 100 may include an ineffective portion other than the effective portion including the deposition region. The through hole may not be located in the ineffective portion.

The mask frame 200 may include an opening. A plurality of through holes of the deposition mask 100 may be disposed on a region corresponding to the opening. Accordingly, the organic material supplied to the organic material deposition vessel 400 may be deposited on the substrate 300 . The deposition mask 100 may be disposed and fixed on the mask frame 200 . For example, the deposition mask 100 may be stretched with a constant tensile force and fixed on the mask frame 200 by welding.

The deposition mask 100 may be stretched in opposite directions from an outermost edge of the deposition mask 100 . In the deposition mask 100 , one end and the other end opposite to the one end of the deposition mask 100 may be pulled in opposite directions in the longitudinal direction of the deposition mask 100 . One end and the other end of the deposition mask 100 may face each other and be disposed in parallel. One end of the deposition mask 100 may be any one of ends forming four side surfaces of the deposition mask 100 . For example, the deposition mask 100 may be stretched with a tensile force of about 0.1 kgf to about 2 kgf. In detail, the deposition mask may be fixed on the mask frame 200 after being stretched with a tensile force of 0.4 kgf to about 1.5 kgf. Accordingly, the stress of the deposition mask 100 can be reduced. However, the embodiment is not limited thereto, and the deposition mask 100 may be tensioned with various tensile forces capable of reducing stress and fixed on the mask frame 200 .

Subsequently, the deposition mask 100 may be fixed to the mask frame 200 by welding an ineffective portion of the deposition mask 100 . Next, a portion of the deposition mask 100 disposed outside the mask frame 200 may be removed by cutting or the like.

The substrate 300 may be a substrate used for manufacturing a display device. For example, the substrate 300 may be a substrate 300 for depositing organic materials for OLED pixel patterns. Red, green, and blue organic patterns may be formed on the substrate 300 to form pixels that are three primary colors of light. That is, an RGB pattern may be formed on the substrate 300 .

The organic material deposition vessel 400 may be a crucible. An organic material may be disposed inside the crucible.

As a heat source and/or current are supplied to the crucible in the vacuum chamber 500 , the organic material may be deposited on the substrate 100 .

Referring to FIG. 3 , the deposition mask 100 may include one surface 101 and another surface 102 opposite to the one surface.

The one surface 101 of the deposition mask 100 may include a small surface hole V2, and the other surface may include a large surface hole V1. For example, each of the one surface 101 and the other surface 102 of the deposition mask 100 may include a plurality of small surface holes V2 and a plurality of large surface holes V1.

Also, the deposition mask 100 may include a through hole TH. The through hole (TH) may be communicated by a communication portion connecting the boundary between the facing hole (V1) and the small surface hole (V2).

Also, the deposition mask 100 may include a first inner surface ES1 within the facing hole V1. A third inner surface ES3 within the small surface hole V2 may be included. The through hole TH may be formed by communicating with the first inner surface ES1 of the facing hole V1 and the third inner surface ES3 of the small surface hole V2. For example, the first inner surface ES1 of one facing hole V1 may communicate with the third inner surface ES3 of one small surface hole V2 to form one through hole. Accordingly, the number of through holes TH may correspond to the number of the facing holes V1 and the small surface holes V2. The first inner surface ES1 and the third inner surface ES3 may be etched surfaces formed during a method of manufacturing a deposition mask to be described later. In addition, although not shown in the drawings, the deposition mask 100 may further include a second inner surface ES2 within the facing hole V1, and the second inner surface ES2 is also of the deposition mask. It may be an etched surface formed during a manufacturing method. A description of the second inner surface ES2 will be described later with reference to FIGS. 5 to 8 .

The width of the facing hole V1 may be greater than that of the small surface hole V2. At this time, the width of the small surface hole V2 is measured on one surface 101 of the deposition mask 100, and the width of the facing hole V1 is measured on the other surface 102 of the deposition mask 100. It can be.

The facing hole V1 may be disposed toward the organic material deposition container 400 . Accordingly, the facing hole V1 can accommodate the organic material supplied from the organic material deposition container 400 in a wide width, and through the small surface hole V2 having a smaller width than the facing hole V1, A fine pattern can be rapidly formed on the substrate 300 .

The small surface hole V2 may be disposed toward the substrate 300 . The small surface hole V2 may be disposed close to the substrate 300 . Accordingly, the small surface hole V2 may have a shape corresponding to the deposition material, that is, the deposition pattern DP.

4 is a plan view of a deposition mask 100 according to an embodiment. Referring to FIG. 4 , the deposition mask 100 will be described in more detail.

Referring to FIG. 4 , the deposition mask 100 according to the embodiment may include a deposition area DA and a non-deposition area NDA.

The deposition area DA may be an area for forming a deposition pattern. The deposition area DA may include an effective portion for forming a deposition pattern. The deposition area DA may include a pattern area and a non-pattern area. The pattern area may be an area including the facing hole V1, the carding hole V2, the through hole TH, and the island portion IS, and the non-pattern area includes the facing hole V1 and the carding hole V2. ), the through hole TH, and the island portion IS. Here, the deposition area DA may include an effective area including an effective area and an outer area, which will be described later, and an ineffective area not including deposition. Accordingly, the effective part may be the pattern area, and the ineffective part may be the non-pattern area. Also, one deposition mask 100 may include a plurality of deposition areas DA. For example, the deposition area DA according to the embodiment may include a plurality of effective portions capable of forming a plurality of deposition patterns. The effective part may include a plurality of effective areas AA1 , AA2 , and AA3 . The pattern area may include the plurality of effective areas AA1 , AA2 , and AA3 .

The plurality of effective areas AA1 , AA2 , and AA3 may be disposed in a central area of the effective portion. The plurality of effective areas AA1 , AA2 , and AA3 may include a first effective area AA1 , a second effective area AA2 , and a third effective area AA3 . Here, one deposition area DA may be a first effective portion including a first effective area AA1 and a first outer area OA1 surrounding the first effective area AA1. Also, one deposition area DA may be a second effective area including a second effective area AA2 and a second outer area OA2 surrounding the second effective area AA2. Also, one deposition area DA may be a third effective portion including a third effective area AA3 and a third outer area OA3 surrounding the third effective area AA3.

In the case of a small display device such as a smart phone, an effective portion of any one of a plurality of deposition areas included in the deposition mask 100 may be used to form one display device. Accordingly, one deposition mask 100 may include a plurality of effective portions, so that several display devices may be simultaneously formed. Therefore, the deposition mask 100 according to the embodiment can improve process efficiency.

Alternatively, in the case of a large display device such as a television, several effective portions included in one deposition mask 100 may be part of one display device. In this case, the plurality of effective portions may be for preventing deformation due to a load of the mask.

The plurality of effective areas AA1 , AA2 , and AA3 may be spaced apart from each other. In detail, the plurality of effective areas AA1 , AA2 , and AA3 may be spaced apart from each other in the direction of the long axis of the deposition mask 100 . The deposition area DA may include a plurality of isolation areas IA1 and IA2 included in one deposition mask 100 . Separation areas IA1 and IA2 may be disposed between adjacent effective portions. The separation areas IA1 and IA2 may be spaced areas between a plurality of effective parts. For example, a first separation area may be formed between the first outer area OA1 surrounding the first effective area AA1 and the second outer area OA2 surrounding the second effective area AA2. (IA1) may be placed. In addition, a second separation area IA2 is formed between the second outer area OA2 surrounding the second effective area AA2 and the third outer area OA3 surrounding the third effective area AA3. can be placed. That is, adjacent effective portions can be distinguished from each other by the separation regions IA1 and IA2, and one deposition mask 100 can support a plurality of effective portions.

The deposition mask 100 may include a non-deposition area NDA on both sides of the deposition area DA in the longitudinal direction. The deposition mask 100 according to the embodiment may include the non-deposition area NDA on both sides of the deposition area DA in a horizontal direction.

The non-deposition area NDA of the deposition mask 100 may be an area not involved in deposition. The non-deposition area NDA may include frame fixing areas FA1 and FA2 for fixing the deposition mask 100 to the mask frame 200 . Also, the non-deposition area NDA may include half-etched portions HF1 and HF2 and an open portion.

As described above, the deposition area DA may be an area for forming a deposition pattern, and the non-deposition area NDA may be an area not involved in deposition. In this case, a surface treatment layer different from the material of the metal plate 10 may be formed in the deposition area DA of the deposition mask 100, and the surface treatment layer may not be formed in the non-deposition area NDA. . Alternatively, a surface treatment layer different from that of the metal plate 10 may be formed on only one surface of one surface 101 or the other surface 102 of the deposition mask 100 . Alternatively, a surface treatment layer different from that of the metal plate 10 may be formed only on a portion of one surface 101 of the deposition mask 100 . For example, one surface 101 and/or the other surface 102 of the deposition mask 100, the whole and/or part of the deposition mask 100, is a surface treatment layer whose etching rate is slower than that of the material of the metal plate 10. It may include, it is possible to improve the etching factor. Accordingly, in the deposition mask 100 according to the embodiment, fine-sized through-holes can be formed with high efficiency. For example, the deposition mask 100 of the embodiment may have a resolution of 400 PPI or higher. Specifically, the deposition mask 100 can form a deposition pattern having a high resolution of 500 PPI or more with high efficiency. Here, the surface treatment layer may include a material different from that of the metal plate 10 or a metal material having a different composition of the same element. In this regard, it will be described in more detail in the manufacturing method of the deposition mask to be described later.

The non-deposition area NDA may include half etching portions HF1 and HF2. For example, the non-deposition area NDA of the deposition mask 100 may include a first half-etched portion HF1 on one side of the deposition area DA, and A second half etching part HF2 may be included on the other side opposite to the one side. The first half-etched portion HF1 and the second half-etched portion HF2 may be regions in which grooves are formed in the depth direction of the deposition mask 100 . The first half-etching part HF1 and the second half-etching part HF2 may have grooves about half the thickness of the deposition mask, so that stress when the deposition mask 100 is stretched may be dispersed. there is. In addition, the half etching portions HF1 and HF2 are preferably formed to be symmetrical in the X-axis direction or Y-axis direction with respect to the center of the deposition mask 100 . Through this, it is possible to uniformly adjust the tensile force in both directions.

The half etching portions HF1 and HF2 may be formed in various shapes. The half etching portions HF1 and HF2 may include semicircular grooves. The groove may be formed on at least one of one surface 101 of the deposition mask 100 and the other surface 102 opposite to the one surface 101 . Preferably, the half etching portions HF1 and HF2 may be formed on one surface 101 corresponding to the carding hole V2. Accordingly, since the half etching portions HF1 and HF2 may be formed simultaneously with the carding hole V2, process efficiency may be improved. In addition, the half etching portions HF1 and HF2 may disperse stress that may occur due to a difference in size between the facing holes V1. However, the embodiment is not limited thereto, and the half etching portions HF1 and HF2 may have a rectangular shape. For example, the first half-etched portion HF1 and the second half-etched portion HF2 may have a rectangular or square shape. Accordingly, the deposition mask 100 can effectively disperse stress.

In addition, the half etching portions HF1 and HF2 may include a curved surface and a flat surface. A plane of the first half-etched portion HF1 may be disposed adjacent to the first effective area AA1, and the plane may be disposed horizontally with an end of the deposition mask 100 in the longitudinal direction. A curved surface of the first half-etched portion HF1 may be convex toward one end of the deposition mask 100 in the longitudinal direction. For example, the curved surface of the first half-etched portion HF1 may be formed such that a 1/2 point of the vertical length of the deposition mask 100 corresponds to a semicircular radius.

Also, a plane of the second half-etched portion HF2 may be disposed adjacent to the third effective area AA3, and the plane may be disposed horizontally with an end of the deposition mask 100 in the longitudinal direction. there is. A curved surface of the second half-etched portion HF2 may be convex toward the other end of the deposition mask 100 in the longitudinal direction. For example, the curved surface of the second half-etched portion HF2 may be formed such that a 1/2 point of the vertical length of the deposition mask 100 corresponds to a semicircular radius.

The half etching portions HF1 and HF2 may be formed simultaneously when forming the facing hole V1 or the small surface hole V2. Through this, process efficiency can be improved. In addition, the grooves formed on one surface 101 and the other surface 102 of the deposition mask 100 may be formed to be offset from each other. Through this, the half etching portions HF1 and HF2 may not penetrate.

Also, the deposition mask 100 according to the embodiment may include four half-etched portions. For example, since the half-etched parts HF1 and HF2 may include an even number of half-etched parts HF1 and HF2, the stress may be more efficiently distributed.

In addition, the half-etched portions HF1 and HF2 may be further formed in the non-effective portion UA of the deposition area DA. For example, a plurality of the half-etched portions HF1 and HF2 may be disposed to disperse stress on the whole or part of the non-effective portion UA when the deposition mask 100 is stretched.

Also, the half etching portions HF1 and HF2 may be formed in the frame fixing areas FA1 and FA2 and/or in the peripheral areas of the frame fixing areas FA1 and FA2. Accordingly, the deposition mask 100 generated when the deposition mask 100 is fixed to the mask frame 200 and/or deposited material is deposited after the deposition mask 100 is fixed to the mask frame 200. ) can distribute the stress uniformly. Accordingly, the deposition mask 100 can be maintained to have uniform through holes.

That is, the deposition mask 100 according to the embodiment may include a plurality of half-etched portions. In detail, the deposition mask 100 according to the embodiment is illustrated as including the half etching portions HF1 and HF2 only in the non-deposition area NDA, but is not limited thereto, and the deposition area DA and the non-deposition area ( At least one area of the NDA) may further include a plurality of half-etched portions. Accordingly, the stress of the deposition mask 100 can be uniformly distributed.

The non-deposition area NDA may include frame fixing areas FA1 and FA2 for fixing the deposition mask 100 to the mask frame 200 . For example, a first frame fixing area FA1 may be included on one side of the deposition area DA, and a second frame fixing area FA2 may be provided on the other side opposite to the one side of the deposition area DA. can include The first frame fixing area FA1 and the second frame fixing area FA2 may be fixed to the mask frame 200 by welding.

The frame fixing areas FA1 and FA2 are disposed between the half-etched areas HF1 and HF2 of the non-deposition area NDA and the effective portion of the deposition area DA adjacent to the half-etched areas HF1 and HF2. It can be. For example, the first frame fixing area FA1 may include a first half-etched area HF1 of the non-deposition area NDA and a second portion of the deposition area DA adjacent to the first half-etched area HF1. It may be disposed between the first effective portion including the first effective area AA1 and the first outer area OA1. For example, the second frame fixing area FA2 may include the second half-etched area HF2 of the non-deposition area NDA and the second half-etched area HF2 adjacent to the second half-etched area HF2. It may be disposed between the third effective area including the third effective area AA3 and the third outer area OA3. Accordingly, it is possible to simultaneously fix a plurality of deposition pattern parts.

In addition, the deposition mask 100 may include semicircular open portions at both ends in the horizontal direction (X). For example, the non-deposition area NDA may include an open portion. In detail, the non-deposition area NDA may include one semicircular open portion at both ends in a horizontal direction. For example, the non-deposition area NDA of the deposition mask 100 may include an open portion having an open center in the vertical direction Y at one side in the horizontal direction. For example, the non-deposition area NDA of the deposition mask 100 may include an open portion having an open center in a vertical direction on the other side opposite to the one side in the horizontal direction. That is, both ends of the deposition mask 100 may include open portions at 1/2 of the length in the vertical direction. For example, both ends of the deposition mask 100 may have a horseshoe shape.

In this case, the curved surface of the open portion may face the half-etched portions HF1 and HF2. Accordingly, the open portions located at both ends of the deposition mask 100 have a vertical length between the first half-etched portions HF1 and HF2 or the second half-etched portions HF1 and HF2 and the deposition mask 100. The separation distance may be the shortest at the 1/2 point of

Also, the vertical length h2 of the open portion may correspond to the vertical length h1 of the first half-etched portion HF1 or the second half-etched portion HF2. Accordingly, when the deposition mask 100 is stretched, stress can be evenly distributed, thereby reducing wave deformation of the deposition mask. Accordingly, the deposition mask 100 according to the embodiment may have uniform through holes, and thus the deposition efficiency of the pattern may be improved. Preferably, the vertical length h1 of the first half-etched portion HF1 or the second half-etched portion HF2 is about 80% to about 200% of the vertical length h2 of the open portion. (h1:h2 = 0.8~2:1). The vertical length h1 of the first half-etched part HF1 or the second half-etched part HF2 may be about 90% to about 150% of the vertical length h2 of the open part ( h1:h2 = 0.9 to 1.5:1). The vertical length h1 of the first half-etched portion HF1 or the second half-etched portion HF2 may be about 95% to about 110% of the vertical length h2 of the open portion ( h1:h2 = 0.95 to 1.1:1).

Also, although not shown in the drawings, the half-etched portion may be further formed in the non-effective portion UA of the deposition area DA. A plurality of half-etched portions may be disposed to distribute stress when the deposition mask 100 is stretched, being distributed over all or part of the non-effective portion UA.

In addition, the half etching portions HF1 and HF2 may also be formed in the frame fixed areas FA1 and FA2 and/or in the peripheral areas of the frame fixed areas FA1 and FA2. Accordingly, the stress of the deposition mask 100 generated when the deposition mask 100 is fixed to the mask frame 200 and/or when depositing material is deposited after the deposition mask 100 is fixed to the frame is reduced. can be evenly distributed. Accordingly, the deposition mask 100 can be maintained to have uniform through holes.

The deposition mask 100 may include a plurality of effective portions spaced apart in the longitudinal direction and non-effective portions UA other than the effective portions. In detail, the deposition area DA may include a plurality of effective areas and non-effective areas UA other than the effective areas. The plurality of effective parts may include a first effective part, a second effective part, and a third effective part. Also, the first effective portion may include a first effective area AA1 and a first outer area OA1 surrounding the first effective area AA1. The second effective portion may include a second effective area AA2 and a second outer area OA2 surrounding the second effective area AA2. The third effective portion may include a third effective area AA3 and a third outer area OA3 surrounding the third effective area AA3.

The effective portion may include a facing hole V1, a small surface hole V2, a through hole TH, and an island portion IS. In detail, the plurality of effective areas AA1 , AA2 , and AA3 in the effective portion include a plurality of small surface holes V2 formed on one surface of the deposition mask 100 and a plurality of facing surfaces formed on the other surface opposite to the one surface. It may include a through hole TH formed by the communication portion CA to which the boundary between the ball V1, the small surface hole V2, and the facing hole V1 is connected.

Also, the effective areas AA1 , AA2 , and AA3 may include an island portion IS supporting between the plurality of through holes TH.

The island portion IS may be positioned between adjacent through holes TH among the plurality of through holes TH. That is, regions other than the through holes TH in the effective regions AA1 , AA2 , and AA3 of the deposition mask 100 may be island portions IS.

The island portion IS may refer to an unetched portion of one surface 101 or the other surface 102 of the effective portion of the deposition mask. In detail, the island portion IS may be an unetched region between the through holes TH and the through holes TH on the other surface 102 where the effective portion of the deposition mask has the facing hole V1 formed therein. Accordingly, the island portion IS may be disposed parallel to one surface 101 of the deposition mask 100 . In detail, an upper surface of the island portion IS may be disposed parallel to the one surface 101 .

The island portion IS may be disposed on the same plane as the other surface 102 of the deposition mask 100 . Accordingly, the island portion IS may have the same thickness as at least a portion of the non-effective portion UA on the other surface 102 of the deposition mask 100 . In detail, the island portion IS may have the same thickness as an unetched portion of the non-effective portion UA on the other surface 102 of the deposition mask 100 . Accordingly, it is possible to improve deposition uniformity of sub-pixels through the deposition mask 100 .

Alternatively, the island portion IS may be disposed on a plane parallel to the other surface 102 of the deposition mask 100 . Here, the parallel plane is the difference between the other surface of the deposition mask 100 on which the island portion IS is disposed by the etching process around the island portion IS and the unetched deposition mask 100 among the non-effective portions. It may include that the height difference of the other surface is ± 1 μm or less.

Also, the island portion IS may have a polygonal shape. Alternatively, the island portion IS may have a curved shape. That is, when viewed from the other surface 102 of the deposition mask 100 as a plane, the island portion IS may have a polygonal or curved shape. For example, an upper surface of the island portion IS may have a polygonal or curved shape. That is, the island portion IS may have a polygonal or curved planar shape. The curved shape may mean a polygon having a plurality of sides and interior angles, and at least one side having a curved line. For example, when viewed from a plane, the island portion IS may have a curved shape including a plurality of curves and the curves connected thereto. That is, the upper surface of the island portion IS may have a polygonal shape or a curved shape by an etching process of forming the facing hole V1.

The deposition mask 100 surrounds the effective areas AA1, AA2, and AA3 and includes outer areas OA1, OA2, and OA3 disposed outside the effective areas AA1, AA2, and AA3. can do. The effective area AA may be an inner area when outermost through-holes for depositing an organic material among a plurality of through-holes are connected. The ineffective portion UA may be an outer region when outermost through-holes for depositing an organic material among a plurality of through-holes are connected. For example, the ineffective portion UA may be an outer area when outermost through-holds of the outer area OA are connected.

The ineffective portion UA includes the effective areas AA1 , AA2 , and AA3 of the deposition area DA, an area excluding the effective portion including the outer areas OA1 , OA2 , and OA3 surrounding the effective area, and the non-deposition area. area (NDA).

The number of the outer areas OA1 , OA2 , and OA3 may correspond to the number of the effective areas AA1 , AA2 , and AA3 . That is, one effective area may include one outer area separated from the end of the effective area by a predetermined distance in the horizontal and vertical directions, respectively.

The first effective area AA1 may be located within the first outer area OA1. The first effective area AA1 may include a plurality of through holes TH for forming a deposition material. The first outer area OA1 surrounding the periphery of the first effective area AA1 may include a plurality of through holes.

For example, the plurality of through holes included in the first outer area OA1 are for reducing etching defects of the through holes TH located at the outermost part of the first effective area AA1. Accordingly, the deposition mask 100 according to the embodiment can improve the uniformity of the plurality of through holes TH located in the effective regions AA1, AA2, and AA3, thereby improving the quality of the deposition pattern manufactured. can improve

Also, the shape of the through hole TH of the first effective area AA1 may correspond to the shape of the through hole of the first outer area OA1. Accordingly, the uniformity of the through holes TH included in the first effective area AA1 may be improved. For example, the shape of the through hole TH of the first effective area AA1 and the shape of the through hole of the first outer area OA1 may be circular. However, the embodiment is not limited thereto, and the through hole TH may have various shapes such as a diamond pattern and an elliptical pattern.

The second effective area AA2 may be located within the second outer area OA2. The second effective area AA2 may have a shape corresponding to that of the first effective area AA1. The second outer area OA2 may have a shape corresponding to that of the first outer area OA1.

The second outer area OA2 may further include two through-holes in the horizontal and vertical directions from the through-hole located at the outermost part of the second effective area AA2. For example, in the second outer area OA2, two through-holes may be arranged in a row in a horizontal direction at positions above and below the through-hole located at the outermost part of the second effective area AA2. For example, in the second outer area OA2, two through-holes may be vertically aligned on the left and right sides of the through-hole located at the outermost part of the second effective area AA2. The plurality of through-holes included in the second outer area OA2 are for reducing etching defects of the through-holes located at the outermost part of the effective portion. Accordingly, the deposition mask according to the embodiment can improve the uniformity of the plurality of through holes located in the effective portion, thereby improving the quality of the deposition pattern manufactured.

The third effective area AA3 may be included in the third outer area OA3. The third effective area AA3 may include a plurality of through holes for forming a deposition material. The third outer area OA3 surrounding the periphery of the third effective area AA3 may include a plurality of through holes.

The third effective area AA3 may have a shape corresponding to that of the first effective area AA1. The third outer area OA3 may have a shape corresponding to the first outer area OA1.

In addition, the through holes TH included in the effective areas AA1 , AA2 , and AA3 may have a shape partially corresponding to the through holes included in the outer areas OA1 , OA2 , and OA3 . In other words, the through holes included in the effective areas AA1 , AA2 , and AA3 may have different shapes from the through holes located in the edge portions of the outer areas OA1 , OA2 , and OA3 . Accordingly, the difference in stress according to the position of the deposition mask 100 can be adjusted.

In addition, when the organic material is deposited, the moving distance of the organic material moving to the effective areas AA1, AA2, and AA3 adjacent to the non-effective area UA is greater than the moving distance of the organic material moving to the central area of the effective area AA1, AA2, and AA3. can be long In addition, the organic material may not be smoothly supplied to the effective areas AA1 , AA2 , and AA3 adjacent to the ineffective area UA due to the island portion IS located on the path along which the organic material moves.

Accordingly, the area of the island portion IS may be different. For example, the area of the island portion IS located at the center of the effective areas AA1 , AA2 , and AA3 is the island portion IS located in the effective areas AA1 , AA2 , and AA3 adjacent to the ineffective portion UA. ) may be different from the area of In detail, the area of the island portion IS located at the center of the effective areas AA1, AA2, and AA3 is the area of the island portion IS located in the effective areas AA1, AA2, and AA3 adjacent to the ineffective portion UA. area can be greater than In more detail, an area of the island portion IS positioned at the center of the effective areas AA1 , AA2 , and AA3 may be larger than an area of the island portion IS adjacent to the outer areas OA1 , OA2 , and OA3 .

Also, the area of the island portion IS may change. For example, the area of the island portion IS located in the effective areas AA1 , AA2 , and AA3 may change toward the ineffective area UA. In detail, the area of the island portion IS may decrease from the central area of the effective areas AA1 , AA2 , and AA3 toward the non-effective area UA. That is, the area of the island portion IS may decrease from the center of the effective areas AA1 , AA2 , and AA3 toward the edges of the effective areas AA1 , AA2 , and AA3 . Accordingly, when the organic material is deposited, the organic material can be smoothly supplied to the through-holes located at the edges of the effective regions AA1, AA2, and AA3, thereby improving deposition efficiency and improving the quality of the deposition pattern.

5 to 7 are plan views of an effective area of the deposition mask 100 according to an embodiment. In detail, FIG. 5 is a plan view of an effective area of the deposition mask 100, FIG. 6 is another plan view of the effective area, and FIG. 7 is another plan view of the effective area. it is a drawing

5 to 7 may be plan views of any one of the first effective area AA1 , the second effective area AA2 , and the third effective area AA3 of the deposition mask 100 according to the embodiment. 5 to 7 are for explaining the shape of the through holes TH and the arrangement between the through holes TH, and the deposition mask 100 according to the embodiment is provided with the through holes TH shown in the drawings. ) is not limited to the number of

5 to 7 , the deposition mask 100 may include a plurality of through holes TH. In this case, the through holes TH may be arranged in a line or alternately arranged according to a direction. For example, the through holes TH may be arranged in a line along a longitudinal axis and a transverse axis, or may be arranged in a line along a longitudinal axis or a transverse axis.

First, referring to FIG. 5 , the deposition mask 100 may include a plurality of through holes TH. In this case, the plurality of through holes TH may have a circular shape. In detail, the through hole TH may have a horizontal diameter Cx and a vertical diameter Cy, and a horizontal diameter Cx and a vertical diameter (Cy) of the through hole TH. Cy) values may correspond to each other. The through holes TH may be arranged in a line according to a direction. For example, the through holes TH may be arranged in a line along the longitudinal axis and the transverse axis.

In detail, the first through hole TH1 and the second through hole TH2 may be arranged in a line along the horizontal axis, and the third through hole TH1 and the fourth through hole TH4 may be arranged in a line along the horizontal axis. there is.

In addition, the first through hole TH1 and the third through hole TH3 may be arranged in a line along the longitudinal axis, and the second through hole TH2 and the fourth through hole TH4 may be arranged in a line along the longitudinal axis. there is.

That is, when the through holes TH are arranged in a line in the vertical axis and the transverse axis, respectively, the island portion IS is located between two adjacent through holes TH in a diagonal direction, which is a direction crossing both the vertical axis and the transverse axis. can do. That is, the island portion IS may be positioned between two adjacent through-holes TH disposed diagonally to each other.

For example, an island portion IS may be disposed between the first through hole TH1 and the fourth through hole TH4. In addition, an island portion IS may be disposed between the second through hole TH2 and the third through hole TH3. The island portion IS may be respectively positioned in an inclination direction of about +45 degrees and an inclination direction of about -45 degrees based on a horizontal axis crossing two adjacent through holes. Here, the inclination angle direction of about ±45 may mean a diagonal direction between the horizontal axis and the vertical axis, and the inclination angle in the diagonal direction may be measured on the same plane of the horizontal axis and the vertical axis.

The island portion IS may have a polygonal or curved shape. For example, when viewing the island portion IS on a plane, the island portion IS may have a polygonal or curved shape having at least five interior angles. Preferably, it may be a curved figure including eight curves and interior angles.

Also, referring to FIG. 6 , the deposition mask 100 may include a plurality of through holes TH. In this case, the plurality of through holes TH may have a rectangular shape. For example, the through hole TH may have a diamond shape. The through hole TH may have a horizontal length Cx and a vertical length Cy, and the horizontal length Cx and the vertical length Cy of the through hole TH can correspond to each other.

The through holes TH may be arranged in a line according to a direction. For example, the through holes TH may be arranged in a line on one of the longitudinal axis and the transverse axis, and alternately arranged on the other axis.

In detail, the first through hole TH1, the second through hole TH2, and the third through hole TH3 may be arranged in a line on the horizontal axis, and the fourth through hole TH4 and the fifth through hole TH5 may be arranged in a line on the horizontal axis, and the fourth through hole TH4 and the fifth through hole TH5 are the first through hole TH1, the second through hole TH2, and the third through hole TH3. Each may be staggered in the longitudinal axis. For example, the fourth through hole TH4 may be alternately disposed between the first through hole TH1 and the second through hole TH2, and the fifth through hole TH5 may be disposed opposite to the second through hole TH2. And it may be disposed alternately between the third through hole (TH3).

When the through holes TH are arranged in a row in one direction of the longitudinal axis or the transverse axis and alternately arranged in the other direction, the island portion IS may be located at a point where the longitudinal axis and the transverse axis intersect. . Alternatively, the island portion IS may be positioned between the four adjacent through holes TH1 , TH2 , TH4 , and TH6 .

The island portion IS may have a polygonal or curved shape. For example, when viewing the island portion IS on a plane, the island portion IS may have a polygonal or curved shape having at least five interior angles. Preferably, it may be a curved figure including eight curves and interior angles. Among the four adjacent through-holes TH1, TH2, TH4, and TH6, the two through-holes TH1 and TH2 may refer to through-holes arranged in a row in one direction of the longitudinal axis or the transverse axis, and the other two The number of through-holes TH4 and TH6 may refer to through-holes disposed in a row in the other one of a longitudinal axis and a transverse axis.

Also, referring to FIG. 7 , another deposition mask 100 according to an embodiment may include a plurality of through holes. In this case, the plurality of through holes may have an elliptical shape. In detail, the diameter Cx in the horizontal direction and the diameter Cy in the vertical direction of the through hole TH may be different from each other. For example, the horizontal diameter (Cx) of the through hole may be greater than the vertical diameter (Cy). However, the embodiment is not limited thereto, and the through hole may have a rectangular shape, an octagonal shape, or a rounded octagonal shape.

The through holes TH may be arranged in a line on one of the longitudinal axis and the transverse axis, and alternately arranged on the other axis. In detail, the first through hole (TH1) and the second through hole (TH2) may be arranged in a line on the horizontal axis, and the third through hole (TH1) and the fourth through hole (TH4) are the first through hole (TH1) And the second through hole (TH2) and each of the vertical axis may be staggered.

When the through holes TH are arranged in a line in one direction of the longitudinal axis or the transverse axis and arranged alternately in the other direction, two adjacent through holes TH1 in the other direction of the longitudinal axis or the transverse axis An island portion IS may be positioned between TH2 . Alternatively, the island portion IS may be positioned between the three through holes TH1 , TH2 , and TH3 positioned adjacent to each other. Of the three adjacent through-holes TH1, TH2, and TH3, two of the through-holes TH1 and TH2 are arranged in a line, and the other through-hole TH3 is an adjacent through-hole in a direction corresponding to the line direction. The location may refer to a through hole disposed in a region between the two through holes TH1 and TH2. An island portion IS may be disposed between the first through hole TH1 , the second through hole TH2 , and the third through hole TH3 . Alternatively, the island portion IS may be disposed between the second through hole TH2 , the third through hole TH3 , and the fourth through hole TH4 .

The island portion IS may have a polygonal or curved shape. For example, when viewing the island portion IS from a plane, the island portion IS may have a polygonal or curved shape having at least five interior angles. Preferably, it may be a curved figure including six curves.

In addition, when measuring the diameter (Cx) in the horizontal direction and the diameter (Cy) in the vertical direction of a reference hole, which is any one through hole, in the deposition mask 100 according to the embodiment (FIGS. 5 and 7), or In the case of measuring the length Cx in the horizontal direction and the length Cy in the vertical direction (FIG. 6), the deviation between the respective diameters or lengths Cx in the horizontal direction between through-holes adjacent to the reference hole, The deviation between the diameters or lengths Cy in the vertical direction may be implemented as about 2% to about 10%. That is, when the size deviation between adjacent through holes of one reference hole is about 2% to about 10%, the uniformity of deposition can be secured. For example, a size deviation between the reference hole and the adjacent through holes may be about 4% to about 9%. For example, a size deviation between the reference hole and the adjacent through holes may be about 5% to about 7%. For example, a size deviation between the reference hole and the adjacent through holes may be about 2% to about 5%. When the size deviation between the reference hole and the adjacent through holes is less than about 2%, the rate of occurrence of moiré in the OLED panel after deposition may be increased. When the size difference between the reference hole and the adjacent through holes exceeds about 10%, the rate of occurrence of color unevenness in the OLED panel after deposition may increase. An average deviation of the diameter or length of the through hole may be ±5 μm. For example, the average deviation of the diameter or length of the through hole may be ±3 μm. For example, the average deviation of the diameter or length of the through hole may be ±1 μm. According to the embodiment, as the size deviation between the reference hole and the adjacent holes is implemented within ±3 μm, deposition efficiency can be improved.

The island portion IS of FIGS. 5 to 7 is the unetched surface between the through holes TH on the other surface 102 of the deposition mask 100 where the facing hole V1 of the effective area AA is formed. can mean In detail, the island portion IS is the deposition mask 100 that is not etched except for the first inner surface ES1 and the through hole TH located in the facing hole V1 in the effective area AA of the deposition mask. It may be the other side 102 of. The deposition mask 100 of the embodiment may be for deposition of a high-resolution to ultra-high resolution OLED pixel having a resolution of 400 PPI or more, specifically 400 PPI to 800 PPI or more.

For example, the deposition mask 100 of the embodiment may be for forming a deposition pattern having a high resolution of Full HD (High Definition) having a resolution of 400 PPI or more. For example, the deposition mask 100 of the embodiment may be for OLED pixel deposition in which the number of pixels in the horizontal and vertical directions is 1920*1080 or more and 400 PPI or more. That is, one effective area included in the deposition mask 100 of the embodiment may be for forming the number of pixels having a resolution of 1920*1080 or more.

For example, the deposition mask 100 of the embodiment may be for forming a deposition pattern having a high resolution of QHD (Quad High Definition) having a resolution of 500 PPI or more. For example, the deposition mask 100 of the embodiment may be for deposition of OLED pixels having 2560*1440 or more pixels in the horizontal and vertical directions and 530 PPI or more. Through the deposition mask 100 of the embodiment, the number of pixels per inch may be 530 PPI or more based on a 5.5-inch OLED panel. That is, one effective area included in the deposition mask 100 of the embodiment may be for forming the number of pixels having a resolution of 2560*1440 or more.

For example, the deposition mask 100 of the embodiment may be used to form a deposition pattern having ultra-high resolution of UHD (Ultra High Definition) having a resolution of 700 PPI or more. For example, in the deposition mask 100 of the embodiment, the number of pixels in the horizontal and vertical directions is 3840*2160 or more, and a deposition pattern having UHD (Ultra High Definition) resolution for OLED pixel deposition of 794 PPI or more is formed. it may be for

A diameter of the through hole TH may be a width between the communication portions CA. In detail, the diameter of the through hole (TH) can be measured at the point where the end of the inner surface in the facing hole (V1) and the end of the inner surface in the small surface hole (V2) meet. More specifically, the diameter of the through hole (TH) can be measured at the point where the end of the first inner surface (ES1) in the facing hole (V1) and the end of the third inner surface (ES3) in the small surface hole (V2) meet. there is. The measurement direction of the diameter of the through hole TH may be any one of a horizontal direction, a vertical direction, and a diagonal direction. A diameter of the through hole TH measured in a horizontal direction may be 33 μm or less. Alternatively, the diameter of the through hole TH measured in the horizontal direction may be 33 μm or less. Alternatively, the diameter of the through hole TH may be an average value of values measured in a horizontal direction, a vertical direction, and a diagonal direction.

Accordingly, the deposition mask 100 according to the embodiment may implement a QHD level resolution. For example, the through hole TH may have a diameter of about 15 μm to about 33 μm. For example, the through hole TH may have a diameter of about 19 μm to about 33 μm. For example, the through hole TH may have a diameter of about 20 μm to about 27 μm. When the diameter of the through hole TH is greater than about 33 μm, it may be difficult to implement a resolution of 500 PPI or higher. Meanwhile, when the diameter of the through hole TH is less than about 15 μm, deposition defects may occur.

Referring to FIG. 5 , a pitch between two adjacent through holes TH among a plurality of through holes in the horizontal direction may be about 48 μm or less. For example, a pitch between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 20 μm to about 48 μm. For example, a pitch between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 30 μm to about 35 μm. Here, the distance may mean a distance P1 between the center of two adjacent first through holes TH1 and the center of the second through hole TH2 in the horizontal direction. Alternatively, the interval may refer to the interval P2 between the centers of two adjacent first and second island portions in the horizontal direction. Here, the center of the island portion IS may be the center of the non-etched other surface between four adjacent through holes TH in the horizontal and vertical directions. For example, the center of the island portion IS is adjacent to the first through hole TH1 in the vertical direction based on the two first through holes TH1 and the second through hole TH2 that are horizontally adjacent to each other. A horizontal axis connecting the edge of one island portion IS located in an area between the third through hole TH3 and the fourth through hole TH4 vertically adjacent to the second through hole TH2, and a vertical axis connecting the edge This may mean a point of intersection.

Also, referring to FIG. 6 , a pitch between two adjacent through holes TH among a plurality of through holes in the horizontal direction may be about 48 μm or less. For example, a pitch between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 20 μm to about 48 μm. For example, a pitch between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 30 μm to about 35 μm. Here, the distance may mean a distance P1 between the center of two adjacent first through holes TH1 and the center of the second through hole TH2 in the horizontal direction. Alternatively, the interval may refer to the interval P2 between the centers of two adjacent first and second island portions in the horizontal direction. Here, the center of the island portion IS may be the center of the non-etched other surface between four adjacent through holes TH in the horizontal and vertical directions. For example, the center of the island portion IS is adjacent to the first through hole TH1 in the vertical direction based on the two first through holes TH1 and the second through hole TH2 that are horizontally adjacent to each other. A horizontal axis connecting the edge of one island portion IS located in an area between the third through hole TH3 and the fourth through hole TH4 vertically adjacent to the second through hole TH2, and a vertical axis connecting the edge This may mean a point of intersection. For example, the center of the island portion IS includes two horizontally adjacent through holes, a first through hole TH1 and a second through hole TH2, and the first through hole TH1 and the second through hole TH1. The center of the area between the through holes TH2 may be the center of the other non-etched surface located in the area between the fourth through hole TH4 and the sixth through hole TH4, which are two vertically adjacent through holes, TH4 and TH4. That is, the center of the island portion IS may be the center of the non-etched surface located between the four through holes.

Also, referring to FIG. 7 , a pitch between two adjacent through holes TH among a plurality of through holes in the horizontal direction may be about 48 μm or less. For example, a pitch between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 20 μm to about 48 μm. For example, a pitch between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 30 μm to about 35 μm. Here, the distance may mean a distance P1 between the center of two adjacent first through holes TH1 and the center of the second through hole TH2 in the horizontal direction. Also, the distance may mean a distance P2 between the centers of two adjacent first island parts and the second island part in a horizontal direction. Here, the center of the island portion IS may be the center of the other non-etched surface between one through hole and two vertically adjacent through holes. Alternatively, the center of the island portion IS may be the center of the other non-etched surface between two through-holes and one through-hole adjacent in the vertical direction. That is, the center of the island portion IS is the center of the non-etched other surface between three adjacent through holes, and the three adjacent through holes may mean that a triangular shape can be formed when the centers are connected.

The direction of measuring the diameter of the through hole TH and the direction of measuring the distance between two adjacent through holes TH may be the same. The distance between the through holes TH may be measured by measuring the distance between two adjacent through holes TH in a horizontal or vertical direction.

In addition, a small surface hole V2 may be formed on one surface 101 of the deposition mask 100 according to the embodiment, and a facing hole V1 may be formed on the other surface 102, and the deposition mask 100 may be formed as described above. It may include a through hole (TH) communicating with the facing hole (V1) and the small surface hole (V2). In addition, the facing hole (V1) and the small surface hole (V2) may each include an inner surface. Here, the inner surface may mean an etched surface.

For example, as shown in FIGS. 5 to 7 , the facing hole V1 may include a plurality of inner surfaces. In detail, the facing hole V1 may include a first inner surface ES1 and a second inner surface ES2.

The first inner surface ES1 may be a surface formed by an etching factor during an etching process. The first inner surface ES1 may be an inner surface extending from the through hole TH to the other surface 102 of the deposition mask 100 . For example, the first inner surface ES1 may extend in a direction of an adjacent through hole TH from an end of the through hole TH and may extend toward the island portion IS. Also, the first inner surface ES1 may extend in the direction of the non-effective portion UA. That is, the first inner surface ES1 may extend in a direction in which the non-etched surface of the other surface 102 of the deposition mask 100 is formed.

In addition, the small surface hole V2 may include a third inner surface ES3. The third inner surface ES3 may be a surface formed by an etching factor during an etching process. The third inner surface ES3 may be an inner surface extending from an end of the through hole TH. For example, the third inner surface ES3 may extend from an end of the through hole TH onto one surface 101 of the deposition mask 100 .

A rib RB may be positioned between the through holes TH. For example, referring to FIG. 5 , one rib RB may be formed between the first through hole TH1 and the second through hole TH2 adjacent in the horizontal direction. In addition, another rib RB may be formed between the first through hole TH1 and the third through hole TH3 adjacent in the vertical direction.

In addition, referring to FIG. 6 , one rib RB may be formed between the first through hole TH1 and the diagonally adjacent fourth through hole TH4, and the first through hole TH1 and Another rib RB may be formed between the sixth through holes TH6 adjacent in the other diagonal direction.

Also, referring to FIG. 7 , one rib RB may be formed between the first through hole TH1 and the horizontally adjacent second through hole TH2, and the first through hole TH1 and Another rib RB may be formed between the diagonally adjacent third through holes TH3.

That is, the rib RB may be positioned between the through holes TH adjacent to each other. In detail, a rib RB may be positioned between adjacent facing holes V1 . In more detail, the rib RB may be located in a region where the adjacent first inner surfaces ES1 are connected to each other. That is, the rib RB may be a region where boundaries of adjacent facing holes V1 are connected.

5 to 7 , the second inner surface ES2 may be a surface formed by an etching factor during an etching process. The second inner surface ES2 may be an inner surface extending from the first inner surface ES1 toward the other surface 102 of the deposition mask 100 . For example, the second inner surface ES2 may extend from an end of the first inner surface ES1 and be connected to an end of the island portion IS. In detail, the second inner surface ES2 may start from an end of a rib RB formed at a boundary of the first inner surface ES1 and be connected to an end of the island portion IS. The second inner surface ES2 is an etched surface for reducing the size of the island portion IS, which is a non-etched surface, and is connected to the end of the island portion IS to form a rib RB and a first inner surface ES1. can be connected

Also, the number of the second inner surface ES2 may correspond to the number of through holes TH. In detail, the number of second inner surfaces ES2 connected to the end of one island portion IS may correspond to the number of through holes TH adjacent to the one island portion IS.

As an example, referring to FIG. 5 , one island portion IS is positioned between the first through hole TH1, the second through hole TH2, the third through hole TH3, and the fourth through hole TH4. can do. In addition, a plurality of second inner surfaces ES2 extending from the end of the island portion IS may be formed at an end of the island portion IS. That is, the island portion IS may be positioned between four through holes TH, and the number of second inner surfaces ES2 formed at this time may be four corresponding to the number of through holes TH. can Also, when there are a plurality of second inner surfaces ES2, the sizes of the respective second inner surfaces ES2 may correspond to each other. Alternatively, the sizes of the second inner surface ES2 may be different from each other. For example, the areas of the inner surfaces facing in a horizontal direction based on one island portion IS of the plurality of second inner surfaces ES2 may correspond to each other, and the areas of the inner surfaces facing in a vertical direction may correspond to each other. can correspond to each other. In this case, an area of the inner surface facing in the horizontal direction may be different from an area of the inner surface facing in the vertical direction. Accordingly, the deposition mask 100 can effectively distribute stress uniformly and secure rigidity against tensile force applied during organic material deposition.

As another example, referring to FIG. 6 , one island portion IS is positioned between the first through hole TH1, the second through hole TH2, the fourth through hole TH4, and the sixth through hole TH6. can do. In addition, a plurality of second inner surfaces ES2 extending from the end of the island portion IS may be formed at an end of the island portion IS. In this case, the number of second inner side surfaces ES2 formed may correspond to the number of through holes TH. That is, the number of the second inner surface ES2 may be four. Also, when there are a plurality of second inner surfaces ES2, the sizes of the respective second inner surfaces ES2 may correspond to each other. Alternatively, the sizes of the second inner surface ES2 may be different from each other. For example, areas of inner surfaces facing in a first diagonal direction based on one island portion IS of the plurality of second inner surfaces ES2 may correspond to each other, and may be perpendicular to the first diagonal direction. Areas of the inner surfaces facing each other in the second diagonal direction may correspond to each other. In this case, an area of the inner surface facing in the first diagonal direction may be different from an area of the inner surface facing in the second diagonal direction.

As another example, referring to FIG. 7 , one island portion IS may be positioned between the first through hole TH1 , the second through hole TH2 , and the third through hole TH3 . In addition, a plurality of second inner surfaces ES2 extending from the end of the island portion IS may be formed at an end of the island portion IS. The number of second inner surfaces ES2 formed at this time may correspond to the number of through holes TH. That is, the number of the second inner surface ES2 may be three. In addition, when there are a plurality of second inner surfaces ES2, the sizes of the respective second inner surfaces ES2 may correspond to each other. Alternatively, the sizes of the second inner surface ES2 may be different from each other. For example, the second inner surface ES2 extends at an angle of 120 degrees with the second inner surface of the first sub and the second inner surface of the first sub extending in the longitudinal direction with respect to the island portion IS. It may include a second sub-second inner surface and a third sub-second inner surface extending at an angle of 120 degrees with the second sub-second inner surface. In this case, the first sub-second inner surface may be formed to face the first sub-second inner surface extending from the adjacent island portion IS. In addition, the second inner surface of the second sub may be formed to face a second inner surface of the second sub extending from another adjacent island portion IS, and the second inner surface of the third sub may be formed to face another adjacent island portion. It may be formed facing the second inner surface of the third sub extending from (IS). In this case, the areas of the second inner surfaces facing each other may correspond to each other, and the areas of the second inner surfaces not facing each other may be different from each other.

Therefore, the deposition mask 100 according to the embodiment can reduce the size of the island portion IS. In detail, the embodiment may reduce the area of the upper surface of the island portion IS, which is a non-etching surface. Accordingly, when the organic material is deposited, the organic material can easily pass through the through hole TH, thereby improving the evaporation efficiency. Also, in the process of depositing the organic material, the organic material may be coated on the upper surface of the island portion IS. However, in the exemplary embodiment, the area of the upper surface of the island portion IS may be reduced, so that the organic material may be prevented from being coated on the island portion IS. In addition, since the deposition mask 100 according to the embodiment can secure strength against external forces such as tensile force, reliability can be improved.

That is, the deposition mask 100 according to the embodiment may deposit an OLED pixel having a resolution of 400 PPI or more. In detail, the deposition mask 100 according to the embodiment has a resolution of 500 PPI or more as the diameter of the through holes TH is about 33 um or less and the pitch between the through holes TH is about 48 um or less. OLED pixels can be deposited. That is, QHD-level resolution can be implemented using the deposition mask 100 according to the embodiment.

A diameter of the through hole TH and a distance between the through holes TH may be a size for forming a green subpixel. For example, the diameter of the through hole TH may be measured based on the green (G) pattern. Since the green (G) pattern has a low visual recognition rate, a larger number than the red (R) pattern and the blue (B) pattern is required, and the spacing between the through holes (TH) is the red (R) pattern and the blue ( B) It can be narrower than the pattern. The deposition mask 100 may be an OLED deposition mask for realizing a QHD display pixel.

For example, the deposition mask 100 may be used to deposit at least one subpixel of red (R), first green (G1), blue (B), and second green (G2). In detail, the deposition mask 100 may be for depositing a red (R) sub-pixel. Alternatively, the deposition mask 100 may be for depositing a blue (B) sub-pixel. Alternatively, the deposition mask 100 may be used to simultaneously form a first green (G1) sub-pixel and a second green (G2) sub-pixel.

The pixel arrangement of the organic light emitting diode display may be arranged in the order of 'red (R) - first green (G1) - blue (B) - second green (G2)' (RGBG). In this case, red (R) - first green (G1) may form one pixel (RG), and blue (B) - second green (G2) may form another pixel (BG). In the organic light emitting diode display having such an arrangement, since the deposition interval of the green light emitting organic material is narrower than that of the red light emitting organic material and the blue light emitting organic material, the deposition mask 100 of the type of the present invention may be required.

Also, in the deposition mask 100 according to the embodiment, the through hole TH may have a diameter of about 20 μm or less in a horizontal direction. Accordingly, the deposition mask 100 according to the embodiment can implement UHD-level resolution. For example, the deposition mask 100 according to the embodiment has a resolution of 800 PPI as the diameter of the through holes TH is about 20 μm or less and the distance between the through holes is about 32 μm or less. OLED pixels can be deposited. That is, UHD resolution may be implemented using the deposition mask according to the embodiment.

A diameter of the through hole and a distance between the through holes may be a size for forming a green subpixel. The deposition mask may be an OLED deposition mask for implementing a UHD display pixel.

FIG. 8 is a view in which cross sections are superimposed to explain height steps and sizes between the cross section in the direction A-A' and the cross section in the direction B-B' of FIG. 5 or 6 .

First, a cross section in the direction A-A' will be described. The A-A' direction is a cross section crossing a central area between two adjacent first through holes TH1 and third through holes TH3 in the vertical direction. That is, the cross section in the A-A' direction may not include the through hole TH.

The cross section in the A-A' direction includes the rib RB, which is a boundary between the first inner surface ES1 in the facing hole V1, the second inner surface ES2, and the inner surfaces ES2 within the facing hole V1. , ES3), an island portion IS, which is the other surface 102 of the deposition mask that is not etched, may be positioned. Accordingly, the island portion IS may include a surface parallel to the non-etched surface 101 of the deposition mask. Alternatively, the island portion IS may include a surface identical to or parallel to the other unetched surface 102 of the deposition mask 100 .

A thickness T1 of the deposition mask 100 may be about 30 μm or less. For example, the thickness T1 may be about 20 μm to about 30 μm. For example, the thickness T1 may be about 15 μm to about 20 μm. The thickness T1 of the deposition mask 100 is the thickness of one side 101 and the other side 102 of the deposition mask 100 and may be a thickness of a portion that is not etched. That is, the thickness T1 of the deposition mask 100 may correspond to the thickness T1 of the metal plate 10 for manufacturing the deposition mask 100 in a method for manufacturing a deposition mask to be described later.

Next, a cross section in the B-B' direction will be described. The B-B' direction is a cross section crossing the center of each of the two adjacent first through holes TH1 and second through holes TH2 in the horizontal direction. That is, the cross section in the B-B′ direction may include a plurality of through holes TH and may not include an island portion IS.

In the cross section in the B-B' direction, the first inner surface ES1 in the facing hole V1, the rib RB, which is a boundary between the first inner surface ES1, and the through hole TH may be located.

In detail, one rib RB may be positioned between the third through hole TH3 and the fourth through hole TH4 adjacent in the BB' direction. Another rib RB may be positioned between the fourth through hole TH4 and the fifth through hole adjacent to the fourth through hole in the horizontal direction but opposite to the third through hole TH3. One through hole TH may be positioned between the one rib and the other rib. That is, one through hole TH may be positioned between two horizontally adjacent ribs RB.

In addition, the cross section in the B-B' direction is a rib (RB), which is a region in which the first inner surface ES1 in the facing hole V1 and the first inner surface ES1 in the adjacent facing hole V1 are connected to each other. ) can be located. Since the rib RB is an etched surface, it may have a smaller thickness than the island portion IS. For example, the island portion IS may have a width of about 2 μm or more. That is, a width of a portion remaining unetched on the other surface in a direction parallel to the other surface may be about 2 μm or more. When the widths of one end and the other end of one island portion IS are greater than or equal to about 2 μm, the entire volume of the deposition mask 100 may be increased. The deposition mask 100 having such a structure may be advantageous in securing sufficient rigidity against tensile force applied in an organic material deposition process and maintaining uniformity of through holes.

The facing hole V1 may include a first inner surface ES1 and a second inner surface ES2, and the small surface hole V2 may include a third inner surface ES3.

In addition, the height H2 of the small surface hole V2 may be smaller than the height H1 of the facing hole V1. In detail, the height H2 of the third inner surface ES3 may be smaller than the sum of the heights H11 of the first inner surface ES1 and the heights H12 of the second inner surface ES2. The height H1 of the facing hole V1 may be the sum of the height H11 of the first inner surface ES1 and the height H12 of the second inner surface ES2. Here, the height H11 of the first inner surface ES1 means a height from the end of the through hole TH to the starting point of the second inner surface ES2 and may be defined as a first height. Also, the height H12 of the second inner surface ES2 means a height from the starting point of the second inner surface ES2 to the island portion IS, and may be defined as the second height.

A height H11 of the first inner surface ES1 may be greater than a height H12 of the second inner surface ES2. A height H12 of the second inner surface ES2 may be about 1.5 μm to about 3.5 μm. In detail, the height H12 of the second inner surface ES2 may be about 2 μm to about 3 μm. In addition, the radius of curvature of the inclination of the first inner surface ES1 may be different from the radius of curvature of the inclination of the second inner surface ES2. For example, the radius of curvature R of the first inner surface ES1 may be greater than the radius of curvature R of the second inner surface ES2. Accordingly, the size of the island portion IS and, in detail, the area of the upper surface of the island portion IS may be reduced.

Also, as described above, the area of the island portion IS may be different between the central area of the effective areas AA1 , AA2 , and AA3 and the effective areas AA1 , AA2 , and AA3 adjacent to the ineffective portion UA. For example, the area of the island portion IS located in the center of the effective areas AA1, AA2, and AA3 is different from the area of the island portion IS located adjacent to the outer areas OA1, OA2, and OA3. can Accordingly, the height H11 of the first inner surface ES1 and the height H12 of the second inner surface ES2 may also be different.

For example, the height H11 of the first inner surface ES1 located in the central area of the effective areas AA1, AA2, and AA3 is the height H11 of the effective areas AA1, AA2, and AA3 adjacent to the ineffective portion UA. It may be higher than the height H11 of the first inner surface ES1. In addition, the height H11 of the first inner surface ES1 may gradually decrease from the central area of the effective areas AA1 , AA2 , and AA3 toward the non-effective portion UA.

In addition, the height H12 of the second inner surface ES2 located in the central area of the effective areas AA1, AA2, and AA3 is the second height H12 located in the effective areas AA1, AA2, and AA3 adjacent to the ineffective portion UA. 2 It may be lower than the height H12 of the inner surface ES2. Also, the height H12 of the second inner surface ES2 may gradually increase from the central area of the effective areas AA1 , AA2 , and AA3 toward the non-effective portion UA.

That is, the height H12 of the second inner surface ES2 is the height ( H12) may increase, and accordingly, an area of the island portion IS connected to the second inner side surface ES2 may decrease. Accordingly, when the organic material is deposited, the organic material can be smoothly supplied to the through-holes located at the edges of the effective regions AA1, AA2, and AA3, thereby improving deposition efficiency and improving the quality of the deposition pattern.

FIG. 9 is a cross-sectional view taken in the direction BB′ of FIG. 5 . The rib RB of the effective area and the through hole TH between the ribs RB according to the cross section in the BB' direction and FIG. 8 will be described with reference to FIG. 9 .

Referring to FIG. 9 , the deposition mask 100 according to the embodiment may have a different thickness in an effective area AA where an etched through hole is formed and a thickness in an unetched non-effective area UA. . In detail, the thickness of the rib RB may be smaller than the thickness of the non-etched non-effective portion UA. Also, the thickness T1 of the deposition mask 100 may be about 30 μm or less. For example, the thickness T1 may be about 20 μm to about 30 μm. For example, the thickness T1 may be about 15 μm to about 20 μm. The thickness T1 of the deposition mask 100 is the thickness of one side 101 and the other side 102 of the deposition mask 100 and may be a thickness of a portion that is not etched. That is, the thickness T1 of the deposition mask 100 may correspond to the thickness T1 of the metal plate 10 for manufacturing the deposition mask 100 in a method for manufacturing a deposition mask to be described later.

In the deposition mask 100 according to the embodiment, the thickness of the non-effective area UA may be greater than the thickness of the effective areas AA1 , AA2 , and AA3 . For example, in the deposition mask 100 , the maximum thickness of the non-effective area UA or the non-deposition area NDA may be about 30 μm or less. For example, in the deposition mask 100 , the maximum thickness of the non-effective portion UA or the non-deposited area NDA may be about 25 μm or less. For example, the deposition mask of the embodiment may have a maximum thickness of about 15 μm to about 25 μm in the non-effective portion or the non-deposited area. When the maximum thickness of the non-effective portion or non-deposited region of the deposition mask according to the embodiment exceeds about 30 μm, the thickness of the metal plate 10, which is the raw material of the deposition mask 100, becomes thicker, so that fine penetration is achieved. It may be difficult to form the hole TH. In addition, when the maximum thickness of the non-effective portion UA or non-deposited area NDA of the deposition mask 100 is less than about 15 μm, it may be difficult to form through holes of a uniform size because the thickness of the metal plate is thin. .

A maximum thickness T3 measured at the center of the rib RB may be about 15 μm or less. For example, the maximum thickness T3 measured at the center of the rib RB may be about 7 μm to about 10 μm. For example, the maximum thickness T3 measured at the center of the rib RB may be about 6 μm to about 9 μm. When the maximum thickness T3 measured at the center of the rib RB exceeds about 15 μm, it may be difficult to form an OLED deposition pattern having a high resolution of 500 PPI or higher. In addition, when the maximum thickness T3 measured from the center of the rib RB is less than about 6 μm, it may be difficult to form a uniform deposition pattern.

The height H2 of the card hole V2, which is the height of the third inner surface ES3 of the deposition mask 100, is about 0.2 times to about 0.2 times the maximum thickness T3 measured at the center of the rib RB. It may be 0.4 times. For example, the maximum thickness T3 measured at the center of the rib RB is about 7 μm to about 9 μm, and the height H1 between one surface of the deposition mask 100 and the communication part is about 1.4 μm. μm to about 3.5 μm. A height H2 of the small hole V2 of the deposition mask 100 may be about 3.5 μm or less. For example, the height of the cardinal hole V2 may be about 0.1 μm to about 3.4 μm. For example, the height of the small hole V2 of the deposition mask 100 may be about 0.5 μm to about 3.2 μm. For example, the height of the small surface hole V2 of the deposition mask 100 may be about 1 μm to about 3 μm. Here, the height may be measured in the thickness measurement direction of the deposition mask 100, that is, in the depth direction, and may be a height measured from one surface of the deposition mask 100 to the communicating portion. In detail, it may be measured in the z-axis direction forming 90 degrees with the above-described horizontal direction (x direction) and vertical direction (y direction) in the plan views of FIGS. 4 to 7 .

When the height between one surface of the deposition mask 100 and the communication portion is greater than about 3.5 μm, deposition defects may occur due to a shadow effect in which the deposition material spreads to an area larger than the area of the through hole during OLED deposition. can

In addition, the hole diameter W1 on one surface of the deposition mask 100 where the card hole V2 is formed and the hole diameter W2 in the communication portion, which is the boundary between the card hole V2 and the facing hole V1, are mutually may be similar or different. A hole diameter W1 on one side of the deposition mask 100 where the small hole V2 is formed may be larger than the hole diameter W2 at the communicating portion. For example, a difference between the hole diameter W1 on one surface of the deposition mask 100 and the hole diameter W2 at the communication portion may be about 0.01 μm to about 1.1 μm. For example, a difference between the hole diameter W1 on one surface of the deposition mask 100 and the hole diameter W2 at the communication portion may be about 0.03 μm to about 1.1 μm. For example, a difference between the hole diameter W1 on one surface of the deposition mask 100 and the hole diameter W2 at the communication portion may be about 0.05 μm to about 1.1 μm.

When the difference between the hole diameter W1 on one surface of the deposition mask 100 and the hole diameter W2 in the communication portion is greater than about 1.1 μm, deposition failure due to a shadow effect may occur.

In addition, one end E1 of the facing hole V1 located on the other surface opposite to the one surface of the deposition mask 100 and one end E2 of the communication portion between the small surface hole V2 and the facing hole V1 may have a first inclination angle θ1 connecting . For example, one end E1 of the facing hole V1 may mean a point where a rib RB, which is a boundary between the first inner surface ES1 in the facing hole V1, is located. Also, one end E2 of the communication part may mean an end of the through hole TH. The first inclination angle θ1 connecting one end E1 of the facing hole V1 and one end E2 of the communication part may be about 40 degrees to about 55 degrees.

Accordingly, it is possible to form a high-resolution deposition pattern of 400 PPI or more, more specifically 500 PPI or more, and at the same time, the island portion IS may be present on the other surface of the deposition mask 100 .

FIG. 10 is a cross-sectional view taken in the direction C-C″-C′ of FIG. 5 . The first inner surface ES1 and the second inner surface ES2 will be described in detail with reference to FIG. 10 .

Referring to FIG. 10 , the facing hole V1 may include a first inner surface ES1 and a second inner surface ES2, and the small surface hole V2 includes a third inner surface ES3. can do. The first inner surface ES1 , the second inner surface ES2 , and the third inner surface ES3 may be curved surfaces.

The first inner surface ES1 may extend from an end of the through hole TH toward the rib RB, the island portion IS, and the ineffective portion UA. An inner surface of the first inner surface ES1 that does not extend in the direction of the rib RB and the ineffective portion UA may be connected to an end of the second inner surface ES2 or an end of the island portion IS. can

In addition, the second inner surface ES2 may be bent at the end E4 of the rib RB and/or the first inner surface ES1 to extend in the direction of the island portion IS. One end E3 of the second inner surface ES2 may be connected to the island portion IS.

It may have a second inclination angle θ2 connecting one end ES3 of the second inner surface ES2 and the end E4 of the rib RB. For example, one end ES3 of the second inner surface ES2 may refer to a boundary between the second inner surface ES2 and the island portion IS. In addition, the end E4 of the rib RB may be a start point of the second inner surface ES2 and may mean an end point of the rib RB, which is a boundary of the first inner surface ES1. there is. The second inclination angle θ2 may have a larger angle than the first inclination angle θ1. In detail, as described above, the second inner surface ES2 may have a radius of curvature R smaller than that of the first inner surface ES1. Accordingly, the second inclination angle θ2 may have an inclination angle of about 56 degrees to about 89 degrees. That is, the radius of curvature may change at a boundary point between the first inner surface ES1 and the second inner surface ES2. In detail, the radius of curvature may change at the end point of the first inner surface ES1 and the start point of the second inner surface ES2. Accordingly, the area of the upper surface of the island portion IS may be reduced.

11 and 12 are diagrams illustrating a method of manufacturing a deposition mask 100 according to an embodiment.

Referring to FIG. 11 , a method of manufacturing a deposition mask 100 according to an embodiment includes preparing a metal plate 10, disposing a photoresist layer on the metal plate 10, and forming a through hole TH. and forming a deposition mask 100 including the through hole TH by removing the photoresist layer.

The metal plate 10 may include a metal material. For example, the metal plate 10 may include nickel (Ni). In detail, the metal plate 10 may include iron (Fe) and nickel (Ni). In more detail, the metal plate 10 may include iron (Fe), nickel (Ni), oxygen (O), and chromium (Cr). In addition, the metal plate 10 includes a small amount of carbon (C), silicon (Si), sulfur (S), phosphorus (P), manganese (Mn), titanium (Ti), cobalt (Co), copper (Cu), At least one element of silver (Ag), vanadium (V), niobium (Nb), indium (In), and antimony (Sb) may be further included. The Invar is an alloy containing iron and nickel and is a low thermal expansion alloy having a coefficient of thermal expansion close to 0. That is, since the invar has a very small coefficient of thermal expansion, it is used in precision parts such as masks and precision devices. Accordingly, the deposition mask manufactured using the metal plate 10 may have improved reliability, prevent deformation, and increase lifespan.

The metal plate 10 may include about 60 wt% to about 65 wt% of iron and about 35 wt% to about 40 wt% of nickel. In detail, the metal plate 10 may include about 63.5 wt% to about 64.5 wt% of iron and about 35.5 wt% to about 36.5 wt% of nickel. In addition, the metal plate 10 includes carbon (C), silicon (Si), sulfur (S), phosphorus (P), manganese (Mn), titanium (Ti), cobalt (Co), copper (Cu), silver ( Ag), vanadium (V), niobium (Nb), indium (In), and antimony (Sb) may further include at least one element by about 1% by weight or less. The composition, content, and weight% of the metal plate 10 are determined by selecting a specific area (a*b) on the plane of the metal plate 10, and a specimen (a*b) corresponding to the thickness (t) of the metal plate 10. b * t) can be sampled and dissolved in a strong acid, etc. to check the weight % of each component. However, the embodiment is not limited thereto, and the weight % of the composition may be investigated in various ways to check the composition of the metal plate.

The metal plate 10 may be manufactured by a cold rolling method. For example, the metal plate 10 may be formed through melting, forging, hot rolling, normalizing, primary cold rolling, primary annealing, secondary cold rolling, and secondary annealing processes, and through the above processes, about 30 μm. It may have the following thickness. Alternatively, the metal plate 10 may have a thickness of about 30 μm or less through an additional thickness reduction process after the above process.

In addition, the step of preparing the metal plate 10 may further include a thickness reduction step according to the target thickness of the metal plate 10 . The thickness reduction step may be a step of reducing the thickness of the metal plate 10 by rolling and/or etching.

For example, a metal plate 10 having a thickness of about 30 μm may be required to manufacture a deposition mask for realizing a resolution of 400 PPI or more, and about 20 μm to manufacture a deposition mask for implementing a resolution of 500 PPI or more. A metal plate 10 having a thickness of about 30 μm to about 30 μm may be required, and a metal plate 10 having a thickness of about 15 μm to about 20 μm may be required to manufacture a deposition mask capable of implementing a resolution of 800 PPI or higher.

In addition, the step of preparing the metal plate 10 may optionally further include a surface treatment step. In detail, since the etching rate of the nickel alloy such as Invar may be high at the initial stage of etching, the etching factor of the carded hole V2 may decrease. In addition, during etching for forming the facing hole V1, the photoresist layer for forming the facing hole V1 may be peeled off by side etching of the etchant. Accordingly, it may be difficult to form fine-sized through-holes, and it may be difficult to form the through-holes uniformly, resulting in a decrease in manufacturing yield.

Therefore, a surface treatment layer for surface modification having different components, contents, crystal structure, and corrosion rate may be disposed on the surface of the metal plate 10 . Here, the surface modification may mean a layer made of various materials disposed on the surface to improve the etching factor.

That is, the surface treatment layer is a layer for preventing rapid etching on the surface of the metal plate 10 and may be a barrier layer having a slower etching rate than that of the metal plate 10 . The surface treatment layer may have a different crystal plane and crystal structure from that of the metal plate 10 . For example, since the surface treatment layer includes an element different from that of the metal plate 10, the crystal plane and crystal structure may be different from each other.

For example, the surface treatment layer may have a different corrosion potential from that of the metal plate 10 in the same corrosive environment. For example, when treated with the same etchant at the same temperature for the same time, the surface treatment layer may have a different corrosion current or corrosion potential from the metal plate 10 .

The metal plate 10 may include a surface treatment layer or a surface treatment portion on one side and/or both sides, the entirety and/or the effective area. The surface treatment layer or the surface treatment part may contain an element different from that of the metal plate 10 or may contain a metal element having a slow corrosion rate in a greater content than that of the metal plate 10 .

Subsequently, a step of forming a through hole by disposing a photoresist layer on the metal plate 10 may proceed. Forming the through hole is a step of forming a first groove for forming a small surface hole (V2) on one surface of the metal plate 10 and a step for forming a facing hole (V1) on the other surface of the metal plate 10. A step of forming a through hole by forming a second groove may be included.

A photoresist layer may be disposed on one surface of the metal plate 10 to form the small hole V2 on one surface of the metal plate 10 . A patterned first photoresist layer PR1 may be formed on one surface of the metal plate 10 by exposing and developing the photoresist layer. That is, a first photoresist layer PR1 including an open portion may be formed on one surface of the metal plate. In addition, an etch stop layer such as a coating layer or a film layer for preventing etching may be disposed on the other side opposite to one side of the metal plate 10 .

Subsequently, a first groove may be formed on one surface of the metal plate 10 by half-etching the open portion of the first photoresist layer PR1 . Since the open portion of the first photoresist layer PR1 may be exposed to an etching solution, etc., etching may occur in an open portion of one surface of the metal plate 10 where the first photoresist layer PR1 is not disposed.

Forming the first groove may be a step of etching the metal plate 10 having a thickness of about 20 μm to about 30 μm (T1) until it becomes about 1/2 thick. The depth of the first groove formed through this step may be about 10 μm to about 15 μm. That is, the thickness T2 of the metal plate measured at the center of the first groove formed after this step may be about 10 μm to about 15 μm.

Forming the first groove may be a step of forming the groove by anisotropic etching or a semi additive process (SAP). In detail, in order to half-etch the open portion of the first photoresist layer PR1, an anisotropic etching method or a semi-addition method may be used. Accordingly, in the first groove formed through the half etching, the etching speed in the depth direction (direction b) may be faster than the speed of the side etching (direction a) than isotropic etching.

An etching factor of the cardinal hole V2 may be 2.0 to 3.0. For example, the etching factor of the cardinal hole V2 may be 2.1 to 3.0. For example, the etching factor of the cardinal hole V2 may be 2.2 to 3.0. Here, the etching factor is the depth (B) of the etched card hole / the width (A) of the photoresist layer extending from the island portion IS on the card hole and protruding toward the center of the through hole TH (Etching Factor = B/A). The A means the average value of the width of one side of the photoresist layer protruding on the surface hole and the width of the other side opposite to the one side.

Subsequently, a photoresist layer may be disposed on the other surface of the metal plate 10 to form a facing hole V1 on the other surface of the metal plate 10 . A patterned second photoresist layer PR2 may be formed on the other surface of the metal plate 10 by exposing and developing the photoresist layer. That is, a second photoresist layer PR2 including an open portion may be formed on the other surface of the metal plate 10 . In addition, an etch stop layer such as a coating layer or a film layer for preventing etching may be disposed on one surface of the metal plate 10 .

Since the open portion of the second photoresist layer PR2 may be exposed to an etching solution, etc., etching may occur in the open portion of the other surface of the metal plate 10 where the second photoresist layer PR2 is not disposed. The other surface of the metal plate 10 may be etched by anisotropic etching or isotropic etching.

As the open portion of the second photoresist layer PR2 is etched, the first groove on one surface of the metal plate 10 may be connected to the facing hole V1 to form a through hole TH.

In addition, the patterned second photoresist layer PR2 is for forming the above-described first inner surface ES1 and second inner surface ES2, and referring to FIG. 12, the second photoresist layer (PR2) may include a first open portion and a second open portion. For example, the patterned second photoresist layer PR2 may include a first open portion and a second open portion different in size from the first open portion. In detail, the second photoresist layer PR2 may include a first open portion and a second open portion smaller in size than the first open portion. In more detail, the second photoresist layer PR2 may include a first open portion for forming the first inner surface ES1 and a second open portion for forming the second inner surface ES2. That is, the height H12 of the second inner surface ES2 formed during etching may vary according to the size of the second open portion, and the height of the first inner surface ES1 may be changed by the second inner surface ES2. (H11) can also change. In addition, the area of the upper surface of the island portion IS formed according to the size of the second open portion may vary. For example, as the size of the second open portion increases, the area etched through the second open portion increases, and the area of the top surface of the island portion IS may decrease.

A size of the second open portion may be about 15% to about 30% of a size of the first open portion. For example, the size of the second open portion may be about 17% to about 28% of the size of the first open portion. For example, the size of the second open portion may be about 20% to about 25% of the size of the first open portion. When the size of the second open portion is less than about 15% of the size of the first open portion, the effect of improving deposition efficiency may be insignificant due to a small change in the island portion IS. In addition, when the size of the second open portion exceeds about 30% of the size of the first open portion, the size of the island portion IS is excessively reduced to ensure sufficient rigidity against the tensile force applied in the organic material deposition process. that can be difficult

Sizes of the second open portions may be different from each other. For example, the size of the second open portion located in the central area of the effective areas AA1 , AA2 , and AA3 may be smaller than the size of the second open portion located in an area adjacent to the non-effective area UA. Accordingly, the height H12 of the second inner surface ES2 positioned in an area adjacent to the ineffective portion UA is equal to the height H12 of the second inner surface ES2 positioned in the central area of the effective areas AA1, AA2, and AA3. It may be higher than the height H12. Therefore, the area of the island portion IS located in the effective areas AA1 , AA2 , and AA3 adjacent to the ineffective portion UA may be reduced, so that the through hole located at the edge of the effective area AA1 , AA2 , and AA3 may be reduced. (TH) can be smoothly supplied with organic matter.

In addition, the size of the second open portion may gradually increase from the central area of the effective areas AA1 , AA2 , and AA3 toward the non-effective area UA. Accordingly, the height H12 of the second inner surface ES2 may gradually increase from the central area of the effective areas AA1 , AA2 , and AA3 to the ineffective portion UA.

Accordingly, the area of the island portion IS may gradually decrease from the central area of the effective areas AA1 , AA2 , and AA3 to the ineffective area UA, and the edge of the effective area AA1 , AA2 , and AA3 may gradually decrease. It is possible to improve deposition efficiency by smoothly supplying an organic material to the through hole TH located at .

In the step of forming the through hole, the step of forming the second groove for forming the facing hole V1 proceeds after the step of forming the first groove for forming the small surface hole V2, and the through hole ( TH) may be a step of forming.

Alternatively, in the step of forming the through hole, the step of forming the first groove for forming the small surface hole V2 proceeds after the step of forming the second groove for forming the facing hole V1. This may be a step of forming the through hole TH.

Alternatively, in the step of forming the through hole, the step of forming the first groove for forming the small surface hole V2 and the step of forming the second groove for forming the facing hole V1 are performed simultaneously. A step of forming the through hole TH may be performed.

Next, by removing the first photoresist layer PR1 and the second photoresist layer PR2, a facing hole V1 formed on one surface and a small surface hole V2 formed on the other surface opposite to the one surface ), through the step of forming a deposition mask 100 including a through hole TH formed by a communication portion to which the boundary between the facing hole V1 and the small surface hole V2 is connected, the deposition mask ( 100) can be formed.

The deposition mask 100 formed through the above steps may include the same material as the metal plate 10 . For example, the deposition mask 100 may include a material having the same composition as that of the metal plate 10 . In addition, the island portion IS of the deposition mask 100 may include the above-described surface treatment layer.

In the deposition mask 100 formed through the above steps, the maximum thickness at the center of the rib RB may be smaller than the maximum thickness at the non-etched non-effective portion UA. For example, the maximum thickness at the center of the rib RB may be about 15 μm. For example, the maximum thickness at the center of the rib RB may be less than about 10 μm. However, the maximum thickness of the non-effective portion UA of the deposition mask 100 may be about 20 μm to about 30 μm or about 15 μm to about 25 μm. That is, the maximum thickness of the non-effective portion UA of the deposition mask 100 may correspond to the thickness of the metal plate 10 prepared in the step of preparing the metal plate 10 .

13 and 14 are diagrams illustrating deposition patterns formed through a deposition mask according to an embodiment.

Referring to FIG. 13 , in the deposition mask 100 according to the embodiment, a height H1 between one surface of the deposition mask 100 on which the small hole V2 is formed and the communication portion may be about 3.5 μm or less. For example, the height H1 may be about 0.1 μm to about 3.4 μm. For example, the height H1 may be about 0.5 μm to about 3.2 μm. For example, the height H1 may be about 1 μm to about 3 μm.

Accordingly, since the distance between one surface of the deposition mask 100 and the substrate on which the deposition pattern is disposed may be short, defects in deposition due to the shadow effect may be reduced. For example, when R, G, and B patterns are formed using the deposition mask 100 according to the embodiment, a defect in which different deposition materials are deposited in a region between two adjacent patterns can be prevented. In detail, as shown in FIG. 14, when the patterns are formed in the order of R, G, and B from the left, it is possible to prevent the R and G patterns from being deposited as a shadow effect in the region between the R and G patterns. can

Also, the deposition mask 100 according to the embodiment may reduce the size of the island portion IS. In detail, since the area of the upper surface of the island portion IS, which is a non-etching surface, can be reduced, the organic material can easily pass through the through hole TH during deposition of the organic material, thereby improving deposition efficiency.

In addition, the area of the island portion IS may decrease from the effective areas AA1 , AA2 , and AA3 toward the non-effective area UA. Accordingly, the organic material can be smoothly supplied to the through-holes located at the edges of the effective regions AA1, AA2, and AA3, thereby improving deposition efficiency and quality of the deposition pattern.

The features, structures, effects, etc. described in the foregoing embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. illustrated in each embodiment can be combined or modified with respect to other embodiments by those skilled in the art in the field to which the embodiments belong. Therefore, contents related to these combinations and variations should be construed as being included in the scope of the present invention.

In addition, although the embodiments have been described above, these are merely examples and do not limit the present invention, and those of ordinary skill in the field to which the present invention belongs can exemplify the above to the extent that does not deviate from the essential characteristics of the present embodiment. It will be seen that various variations and applications that have not been made are possible. For example, each component specifically shown in the embodiments can be modified and implemented. And differences related to these variations and applications should be construed as being included in the scope of the present invention as defined in the appended claims.

Claims (15)

In the deposition mask of a metal material for OLED pixel deposition,
The metal material includes invar containing iron (Fe) and nickel (Ni),
The deposition mask includes a plurality of effective portions for deposition and ineffective portions other than the effective portions,
The effective part,
A plurality of face holes disposed on one surface of the metal material, a plurality of facing holes disposed on the other surface opposite to the one surface of the metal material, and a through hole arranged by a communication portion communicating between the face hole and the face hole; Includes ribs disposed between adjacent through holes,
The deposition mask of claim 1 , wherein the rib includes a first inner surface extending with a first curvature and a second inner surface extending with a second curvature from an end of the first inner surface. According to claim 1,
Wherein the first inner surface and the second inner surface have different radii of curvature. According to claim 2,
Wherein the radius of curvature of the first curvature is greater than the radius of curvature of the second curvature. According to claim 1,
The deposition mask further comprises an island portion disposed on the other surface of the metal material and disposed between adjacent through holes in a first direction. According to claim 4,
The ribs are disposed on the other surface of the metal material and are disposed between adjacent through-holes inclined in the first direction and adjacent in a second direction different from the first direction. According to claim 5,
The second inner surface of the rib,
A deposition mask extending from an end of the first inner surface toward the island portion while having the second curvature. According to claim 5,
The rib is a region remaining after a part of the other surface of the metal material is etched,
The ribs are disposed at boundaries of adjacent through-holes in the second direction. According to claim 7,
The ribs are positioned at the boundary between adjacent through holes in the second direction. According to claim 1,
The second inner surface of the rib extends from one end of the first inner surface, the deposition mask. According to claim 1,
The second inner surface of the rib extends from both ends of the first inner surface. According to claim 4,
The island portion is in contact with the end of the second inner surface of the rib, the deposition mask. According to claim 4,
The island portion is disposed between adjacent ribs, the deposition mask. According to claim 12,
The island portion is disposed between second inner surfaces of adjacent ribs. According to claim 4,
The first inner surface has a first height in a vertical direction from an end of the through hole to a starting point of the second inner surface,
The second inner surface has a second height in a vertical direction from a starting point of the second inner surface to the island portion,
The first height is greater than the second height of the deposition mask. According to claim 14,
The second height of the deposition mask is 1.5㎛ to 3.5㎛.

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