KR102435341B1 - Deposition mask and manufacturing method thereof - Google Patents

Abstract

The embodiment relates to a metal plate of an iron (Fe)-nickel alloy used for manufacturing a deposition mask for OLED pixel deposition, and in a depth region from the surface of the metal material to 15 nm, the maximum value of the iron (Fe) atomic concentration Silver is 40 at% or less, the maximum value of the nickel (Ni) atomic concentration is 25 at% or less, and the maximum value of the oxygen (O) atomic concentration is 55 at% to 65 at%.
In addition, the embodiment relates to a deposition mask including an iron (Fe)-nickel (Ni) alloy metal material for deposition of an OLED pixel, wherein the deposition mask includes a deposition region for deposition and a non-deposition region other than the deposition region including, wherein the deposition region includes a plurality of effective portions and non-effective portions other than the effective portion, and the effective portion includes a plurality of small face holes formed on one surface of the metal material, and on the other surface opposite to one surface of the metal material. a plurality of face-to-face holes formed, a plurality of through-holes communicating with the small-faced holes and the face-to-face holes, and an island portion formed on the other surface of the metal material and positioned between the through holes, wherein the non-deposition region and the ineffective portion or in at least one of the island portions, the maximum value of the iron (Fe) atomic concentration in the depth region from the surface of the metal material to 15 nm is 40 at% or less, the maximum value of the nickel (Ni) atomic concentration is 25 at% or less, and oxygen (O) The maximum value of the atomic concentration is 55at% to 65at%.
In addition, the embodiment relates to a method of manufacturing a deposition mask for OLED pixel deposition, comprising the steps of preparing a metal plate, surface treatment of the metal plate, disposing a first photoresist layer on one surface of the metal plate, patterning a first photoresist layer, forming a first groove on one surface of the metal plate through the open portion of the patterned first photoresist layer, a second on the other surface opposite to one surface of the metal plate disposing a photoresist layer and patterning the second photoresist layer, forming a second groove through an open portion of the patterned second photoresist layer, and communicating the first groove and the second groove and forming a through hole.

Description

Deposition mask and manufacturing method thereof

The present invention relates to a deposition mask capable of improving deposition efficiency by uniformly formed through-holes during deposition of an OLED pixel, and a method for manufacturing the same.

The display apparatus is applied and used in various devices. For example, the display device is applied and used not only in small devices such as smart phones and tablet PCs, but also in large devices such as TVs, monitors, and public displays (PDs). In particular, in recent years, the demand for ultra-high resolution UHD (UHD) of about 500 PPI (Pixel Per Inch) or higher is increasing, and high-resolution display devices are being applied to small devices and large devices. Accordingly, interest in technology for implementing low power and high resolution is increasing.

A generally used display device may be largely divided into a liquid crystal display (LCD) and an organic light emitting diode (OLED) according to a driving method.

The LCD is a display device driven using liquid crystal, and has a structure in which a light source including a Cold Cathode Fluorescent Lamp (CCFL) or a Light Emitting Diode (LED) is disposed under the liquid crystal, and on the light source It is a display device driven by controlling the amount of light emitted from the light source using the disposed liquid crystal.

In addition, an OLED is a display device driven using an organic material, and a separate light source is not required, and the organic material itself serves as a light source and can be driven with low power. In addition, OLED is attracting attention as a display device that can replace LCD because it can express infinite contrast ratio, has a response speed of about 1000 times faster than LCD, and has excellent viewing angle.

In particular, in the OLED, the organic material included in the light emitting layer may be deposited on a substrate by a deposition mask called a fine metal mask (FMM), and the deposited organic material corresponds to a pattern formed on the deposition mask. It may be formed in a pattern to serve as a pixel. In detail, the deposition mask includes a through hole formed at a position corresponding to the pixel pattern, and can be deposited on the substrate by passing red, green, and blue organic materials through the through hole. have. Accordingly, a pixel pattern may be formed on the substrate.

The deposition mask may be made of a metal plate made of an iron (Fe) and nickel (Ni) alloy. For example, the deposition mask may be made of an iron-nickel alloy called invar. The deposition mask may include a through hole for organic material deposition as described above, and the through hole may be formed by an etching process.

The etching process for forming the through hole may be a process of etching the surface of the metal plate. However, the surface of the metal plate may include materials in various states, and etching characteristics may be changed by the materials. In detail, the surface material of the metal plate may change according to the atomic concentration included in the surface of the metal plate, and thus the surface of the metal plate may not be etched uniformly. Accordingly, there is a problem in that the characteristics such as diameter, shape, and depth of the through-hole formed on the surface of the metal plate are not uniform, and this reduces the amount of organic material passing through the through-hole, thereby lowering the deposition efficiency. . In addition, there is a problem in that the organic material deposited on the substrate is also not uniform, resulting in poor deposition.

Accordingly, there is a need for a new deposition mask capable of solving the above problems and a method for manufacturing the same.

The embodiment is intended to provide a method for improving both the thickness and quality of the oxide film of the metal plate to improve the adhesion between the metal plate and the photoresist, and to improve the etching quality of the through hole.

The embodiment is to provide a deposition mask capable of controlling the atomic concentration of about 50 nm or less from the surface of a metal plate formed on the surface, and controlling the thickness of an oxide film formed on the surface of the metal plate, and a method for manufacturing the same .

In addition, the embodiment intends to provide a deposition mask having a uniform through-hole. In detail, the embodiment intends to provide a deposition mask capable of uniformly forming small-faced holes and facing-to-face holes, thereby improving the uniformity and precision of through-holes communicating with the small-faced holes and the facing holes, and a method for manufacturing the same.

The embodiment relates to a metal plate of an iron (Fe)-nickel alloy used for manufacturing a deposition mask for OLED pixel deposition, and in a depth region from the surface of the metal plate to 15 nm, the maximum value of the iron (Fe) atomic concentration Silver is 40 at% or less, the maximum value of the nickel (Ni) atomic concentration is 25 at% or less, and the maximum value of the oxygen (O) atomic concentration is 55 at% to 65 at%.

In addition, the embodiment relates to a deposition mask including an iron (Fe)-nickel (Ni) alloy metal material for deposition of an OLED pixel, wherein the deposition mask includes a deposition region for deposition and a non-deposition region other than the deposition region including, wherein the deposition region includes a plurality of effective portions and non-effective portions other than the effective portion, and the effective portion includes a plurality of small face holes formed on one surface of the metal material, and on the other surface opposite to one surface of the metal material. a plurality of face-to-face holes formed, a plurality of through-holes communicating with the small-faced holes and the face-to-face holes, and an island portion formed on the other surface of the metal material and positioned between the through holes, wherein the non-deposition region and the ineffective portion or in at least one of the island portions, the maximum value of the iron (Fe) atomic concentration in the depth region from the surface of the metal material to 15 nm is 40 at% or less, the maximum value of the nickel (Ni) atomic concentration is 25 at% or less, and oxygen (O) The maximum value of the atomic concentration is 55at% to 65at%.

In addition, the embodiment relates to a method of manufacturing a deposition mask for OLED pixel deposition, comprising the steps of preparing a metal plate, surface treatment of the metal plate, disposing a first photoresist layer on one surface of the metal plate, patterning a first photoresist layer, forming a first groove on one surface of the metal plate through the open portion of the patterned first photoresist layer, a second on the other surface opposite to one surface of the metal plate disposing a photoresist layer and patterning the second photoresist layer, forming a second groove through an open portion of the patterned second photoresist layer, and communicating the first groove and the second groove and forming a through hole.

The embodiment may improve the quality of the deposition mask by improving both the thickness and quality of the oxide film of the metal plate.

In addition, the deposition mask according to the embodiment may include an oxide layer having an oxygen atom concentration of 5 at% or more, and the thickness of the oxide layer may be about 40 nm or more from the surface. In addition, it may include iron oxide and nickel hydroxide on the surface. Accordingly, it is possible to prevent the surface from being overetched in the etching process for forming the small face hole and the face hole. Therefore, it is possible to more precisely and uniformly form the through-holes communicating the small-faced hole and the large-faced hole, and the organic material can be uniformly deposited on the substrate when the organic material is deposited using the deposition mask, thereby improving the deposition efficiency. can be improved

In addition, the deposition mask according to the embodiment can precisely and uniformly form the through-holes. Accordingly, it is possible to uniformly deposit an OLED pixel pattern having a high resolution of 400 PPI or more, and further, an OLED pixel pattern having a high resolution of 800 PPI or more.

1 is a view showing a cross-sectional view of a metal plate according to an embodiment.
2 is a diagram illustrating a graph obtained by X-ray elemental analysis of the surface of a metal plate, which is a base material of a deposition mask according to an embodiment.
3 to 4 are diagrams illustrating graphs of iron (Fe) characteristics of the surface of a metal plate analyzed using X-ray elemental analysis.
5 to 6 are diagrams illustrating graphs of nickel (Ni) characteristics of the surface of a metal plate analyzed using X-ray elemental analysis.
7 to 9 are conceptual views for explaining a process of depositing an organic material on a substrate using a deposition mask according to an embodiment.
10 is a diagram illustrating a plan view of a deposition mask according to an embodiment.
11 is a diagram illustrating a plan view of an effective part of a deposition mask according to an embodiment.
12 is a photomicrograph of an effective portion of a deposition mask according to an embodiment viewed from a plane.
13 is a diagram illustrating another plan view of a deposition mask according to an embodiment.
FIG. 14 is a view showing a cross-sectional view taken along line A-A' and a cross-sectional view taken along line B-B' of FIG. 11 or 12 overlaid.
15 is a view showing a cross-sectional view taken in the BB′ direction of FIG. 11 or 12 .
16 is a diagram illustrating a manufacturing process of a deposition mask according to an embodiment.
17 and 18 are diagrams illustrating a deposition pattern formed through a deposition mask according to an embodiment.
19 is a diagram illustrating a graph obtained by X-ray elemental analysis of the surface of a metal plate according to a comparative example.
20 is a view showing a graph for comparing the surface iron (Fe) characteristics of metal plates according to Examples and Comparative Examples.
21 is a diagram illustrating a graph for comparing surface nickel (Fe) characteristics of metal plates according to Examples and Comparative Examples.
22 and 23 are micrographs viewed from a plane of a small face hole of a deposition mask according to Examples and Comparative Examples.

Hereinafter, the configuration and operation according to the present invention will be described in detail with reference to the accompanying drawings. In the description with reference to the accompanying drawings, the same components are given the same reference, regardless of the reference numerals, and the redundant description thereof will be omitted. Terms such as first, second, etc. may be used to describe various elements, but the elements should not be limited by the terms. The above terms are used only for the purpose of distinguishing one component from another.

Further, in the description of the embodiments, each layer (film), region, pattern or structure is “above/on” or “below/below” the substrate, each layer (film), region, pad or patterns. The description of being formed on “under)” includes all those formed directly or through another layer. The criteria for the upper/above or lower/lower layers of each layer will be described with reference to the drawings.

In addition, when a part is said to be "connected" with another part, it includes not only the case where it is "directly connected" but also the case where it is "indirectly connected" with another member interposed therebetween. In addition, when a part "includes" a certain component, this means that other components may be further provided without excluding other components unless otherwise stated.

Hereinafter, a deposition mask according to an embodiment will be described with reference to the drawings. The deposition mask may be manufactured using a metal plate as a raw material. Before describing the deposition mask, a metal plate will be first described.

1 is a view showing a cross-section of a metal plate 10, which is a raw material of a deposition mask 100 according to an embodiment.

Referring to FIG. 1 , the metal plate 10 may include a metal material. For example, the metal plate 10 may include a nickel (Ni) alloy. In detail, the metal plate 10 may include an alloy of iron (Fe) and nickel (Ni). In more detail, the metal plate 10 may include iron (Fe), nickel (Ni), oxygen (O), and chromium (Cr). For example, the metal plate 10 may contain about 60 wt% to about 65 wt% of iron, and about 35 wt% to about 40 wt% of nickel. In detail, the metal plate 10 may contain about 63.5 wt% to about 64.5 wt% of iron, and about 35.5 wt% to about 36.5 wt% of nickel. The component, content, and weight % of the metal plate 10 are, by selecting a specific region (a*b) on the plane of the metal plate 10 , the specimen (a*) corresponding to the thickness (t) of the metal plate 10 . b*t) can be sampled and dissolved in a strong acid, etc. to check the weight% of each component. However, the examples are not limited thereto, and the content may be checked in various ways.

In addition, the metal plate 10 is a small amount of carbon (C), silicon (Si), sulfur (S), phosphorus (P), manganese (Mn), titanium (Ti), cobalt (Co), copper (Cu), At least one element selected from among silver (Ag), vanadium (V), niobium (Nb), indium (In), and antimony (Sb) may be further included. Here, a small amount may mean 1 wt% or less. That is, the metal plate 10 may include Invar. The Invar is an alloy containing iron and nickel, and is a low thermal expansion alloy having a thermal expansion coefficient close to zero. That is, since the invar has a very small coefficient of thermal expansion, it is used for precision parts such as masks and precision instruments. Accordingly, the deposition mask manufactured using the metal plate 10 may have improved reliability, thereby preventing deformation and increasing lifespan.

The metal plate 10 including the above-described iron-nickel alloy may be manufactured by a cold rolling method. In detail, the metal plate 10 may be formed through melting, forging, hot rolling, normalizing, primary cold rolling, primary annealing, secondary cold rolling and secondary annealing processes, and may have a thickness of 30 μm or less. have. Alternatively, it may have a thickness of 30 μm or less through an additional thickness reduction process in addition to the above processes.

The metal plate 10 may have a rectangular shape. In detail, the metal plate 10 may have a rectangular shape having a long axis and a short axis, and may have a thickness of about 30 μm or less.

The metal plate 10 may include an outer portion SP including a surface and an inner portion other than the outer portion SP. Here, the surface may refer to the surfaces of one surface and the other surface of the metal plate 10 . In addition, the outer portion SP may mean a depth of about 30 nm or less from each surface. The atomic concentration of the outer portion SP of the metal plate 10 may be different from the atomic concentration of the inner portion IP of the metal plate 10 .

The metal plate 10 may include iron (Fe), nickel (Ni), oxygen (O), and chromium (Cr) atoms. In detail, the outer portion including the surface of the metal plate 10 may include iron (Fe), nickel (Ni), oxygen (O), and chromium (Cr) atoms.

The type and atomic concentration of atoms included in the metal plate 10 may be confirmed by X-ray Photoelectron Spectroscopy (XPS). The X-ray elemental analysis method is one of electron spectroscopy methods, and an element may be analyzed using X-rays as a light source. In detail, when X-rays are irradiated to the metal plate, photoelectrons are emitted out of the material, and the kinetic energy reflects the magnitude of the binding energy at the original position of the atoms constituting the material. etc. can be seen. Using the X-ray elemental analysis method, the concentration of atoms at a specific depth can be known from the surface. Using this method, the concentration and maximum value of a specific atom can be determined from the surface to a specific depth, and the increase and decrease of the atomic concentration with depth trends can be identified. In addition, in the description below for each atomic concentration, a maximum value may mean a maximum value among atomic concentrations measured using the X-ray elemental analysis method.

In the example, the components according to the atomic concentration and depth of the metal plate 10 were analyzed using XPS equipment (manufactured by ULVAL-PHI), and the X-ray incident angle was 90 degrees and the photoelectron incident angle was 40 degrees. In addition, the energy source of X-rays used was Monochromated Al-Kα (hv=1486.6 eV), and the 100 μmФ area of the sample metal plate was measured with X-ray outputs of 15 kV and 1.6 mA.

FIG. 2 is a diagram illustrating atomic concentrations according to depths of iron (Fe), nickel (Ni), oxygen (O), and carbon (O) of the metal plate 10 . Referring to FIG. 2 , the atomic concentration according to the depth of the outer portion SP of the metal plate 10 can be seen. In detail, the X-axis shown in the figure means sputter time (Min), and the Y-axis means atom concentration (at%). In addition, the sputtering time of 0.5 minutes may mean sputtering the surface of the metal plate 10 for 0.5 minutes, and may mean measuring at a depth of about 5 nm from the surface. In addition, the sputtering time of 1 minute may mean sputtering the surface of the metal plate 10 for 1 minute, and may mean measuring at a depth of about 10 nm from the surface.

Since the XPS equipment can measure the atomic concentration included in the range from 0.4 nm to about 5 nm from the above-described measurement point, when the measurement point is about 10 nm deep from the surface, atoms from a depth of about 10 nm to a depth of about 15 nm concentration can be analyzed. That is, when a specific point is measured, the atomic concentration at a depth of about +5 nm from the measurement point can be analyzed.

Before explaining the atomic concentration contained in the metal plate 10 using FIG. 2, a first region from a depth of about 5 nm to a depth of about 10 nm based on the surface of the metal plate 10 can be defined as a first region, From a depth of about 10 nm to a depth of about 15 nm with respect to the surface may be defined as a second region, and from a depth of about 15 nm to a depth of about 20 nm with respect to the surface may be defined as a third region. A fourth region may be defined from a depth of about 20 nm to a depth of about 25 nm based on the surface of the metal plate 10, and a fifth region may be defined from a depth of about 25 nm to a depth of about 30 nm based on the surface. A sixth region may be defined from a depth of about 30 nm to a depth of about 35 nm based on the surface. A seventh region may be defined from a depth of about 35 nm to a depth of about 40 nm based on the surface of the metal plate 10, and an eighth region may be defined from a depth of about 40 nm to a depth of about 45 nm based on the surface. The ninth region may be defined from a depth of about 45 nm to a depth of about 50 nm based on the surface.

Referring to FIG. 2 , an atomic concentration of iron included in the outer portion SP of the metal plate 10 may be different depending on the depth. For example, the maximum value of the iron atom concentration in the outer portion SP of the metal plate 10 may be about 60 at% or less. In detail, the maximum value of the iron atom concentration in the depth range from the surface of the metal plate 10 to about 40 nm may be about 60 at% or less.

When sputtering the surface of the metal plate 10 for 0.5 minutes, it may mean sputtering from the surface of the metal plate 10 to about 5 nm, and the sputtering end is about 5 nm as the starting point, from the starting point to about Atomic concentrations down to a depth of 5 nm or less can be analyzed. That is, an iron atom concentration value of up to about 10 nm from the surface can be found. The maximum value of the iron atom concentration in a depth region of about 10 nm from the surface of the metal plate 10 may be about 30 at% or less. In detail, the maximum value of the iron atom concentration at a depth of about 5 nm to about 10 nm based on the surface, for example, the depth of the first region may be about 30 at% or less. In more detail, the maximum value of the iron atom concentration from a depth of about 5 nm to a depth of about 10 nm (the first region) from the surface may be about 25 at% to about 30 at%.

When sputtering the surface of the metal plate 10 for 1 minute, it may mean sputtering from the surface of the metal plate 10 to about 10 nm, and the sputtering is terminated at about 10 nm as the starting point, from the starting point to about Atomic concentrations down to a depth of 5 nm or less can be analyzed. That is, an iron atom concentration value from a depth of about 10 nm to a depth of about 15 nm from the surface (the second region) can be found. The maximum value of the iron atom concentration in the depth range from the surface of the metal plate 10 to about 15 nm may be about 40 at% or less. In detail, the maximum value of the iron atom concentration at a depth of about 10 nm to about 15 nm based on the surface, for example, the depth of the second region may be about 40 at% or less. In more detail, the maximum value of the iron atom concentration from a depth of about 10 nm to a depth of about 15 nm (the second region) may be about 30 at% to about 40 at%. More specifically, the maximum value of the iron atom concentration from a depth of about 10 nm to a depth of about 15 nm (the second region) from the surface may be about 32 at% to about 38 at%. More specifically, the maximum value of the iron atom concentration from a depth of about 10 nm to a depth of about 15 nm (the second region) from the surface may be about 33 at% to about 36 at% or less.

When sputtering the surface of the metal plate 10 for 1.5 minutes, it may mean sputtering from the surface of the metal plate 10 to about 15 nm, and the sputtering end is about 15 nm as the starting point, from the starting point to about Atomic concentrations down to a depth of 5 nm or less can be analyzed. That is, an iron atom concentration value from a depth of about 15 nm to a depth of about 20 nm (the third region) from the surface can be found. The maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 20 nm may be about 45 at% or less. In detail, the maximum value of the iron atom concentration at a depth from a depth of about 15 nm to about 20 nm based on the surface, for example, a depth of the third region may be about 45 at% or less. In more detail, the maximum value of the iron atom concentration from a depth of about 15 nm to a depth of about 20 nm (the third region) from the surface may be about 40 at% to about 45 at%.

When sputtering the surface of the metal plate 10 for 2 minutes, it may mean sputtering from the surface of the metal plate 10 to about 20 nm, and the sputtering end is about 20 nm as the starting point, from the starting point to about Atomic concentrations down to a depth of 5 nm or less can be analyzed. That is, the iron atom concentration value from the surface to a depth of about 20 nm to a depth of about 25 nm (the fourth region) can be found. The maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 25 nm may be about 55 at% or less. In detail, the maximum value of the iron atom concentration at a depth of about 20 nm to about 25 nm based on the surface, for example, the depth of the fourth region may be about 55 at% or less. In more detail, the maximum value of the iron atom concentration from a depth of about 20 nm to a depth of about 25 nm (the fourth region) from the surface may be about 45 at% to about 55 at%. In more detail, the maximum value of the iron atom concentration from a depth of about 20 nm to a depth of about 25 nm (the fourth region) from the surface may be about 47 at% to about 50 at%.

When sputtering the surface of the metal plate 10 for 2.5 minutes, it may mean sputtering from the surface of the metal plate 10 to about 25 nm, and the sputtering end is about 25 nm as the starting point, from the starting point to about Atomic concentrations down to a depth of 5 nm or less can be analyzed. That is, an iron atom concentration value from a depth of about 25 nm to a depth of about 30 nm from the surface (the fifth region) can be found. The maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 30 nm may be about 55 at% or less. In detail, the maximum value of the iron atom concentration at a depth of about 25 nm to about 30 nm based on the surface, for example, the depth of the fifth region may be about 55 at% or less. In more detail, the maximum value of the iron atom concentration from a depth of about 25 nm to a depth of about 30 nm (fifth region) from the surface may be about 50 at% to about 55 at%.

When the surface of the metal plate 10 is sputtered for 3 minutes, it may mean sputtering from the surface of the metal plate 10 to about 30 nm, and from the starting point to the about 30 nm point where sputtering is finished. Atomic concentrations down to a depth of about 5 nm or less can be analyzed. That is, an iron atom concentration value from a depth of about 30 nm to a depth of about 35 nm (the sixth region) from the surface can be found. The maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 35 nm may be about 55 at% or less. In detail, the maximum value of the iron atom concentration at a depth of about 30 nm to about 35 nm based on the surface, for example, the depth of the sixth region may be about 55 at% or less. In more detail, the maximum value of the iron atom concentration from a depth of about 30 nm to a depth of about 35 nm (sixth region) from the surface may be about 50 at% to about 55 at%.

The concentration of iron atoms in the outer portion SP of the metal plate 10 may vary. For example, the concentration of iron atoms in the outer portion SP of the metal plate 10 may gradually increase as it deepens from the surface. In detail, the maximum value of the iron atom concentration in the depth region up to about 15 nm from the surface of the metal plate 10 is greater than the maximum value of the iron atom concentration in the depth region up to about 10 nm from the surface of the metal plate 10 . can In addition, the maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 20 nm is greater than the maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 15 nm. can In addition, the maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 25 nm is greater than the maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 20 nm. can In addition, the maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 30 nm is greater than the maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 25 nm. can In addition, the maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 35 nm is greater than the maximum value of the iron atom concentration in the depth region from the surface of the metal plate 10 to about 30 nm. can That is, the iron atom concentration may gradually increase as the depth increases in the outer portion SP of the metal plate 10 .

In addition, the nickel atom concentration according to the surface depth of the metal plate 10 will be described with reference to FIG. 2 . Referring to FIG. 2 , the concentration of nickel atoms included in the outer portion SP of the metal plate 10 may be different depending on the depth. For example, the maximum value of the nickel atom concentration in the outer portion SP of the metal plate 10 may be about 40at% or less. In detail, the maximum value of the nickel atom concentration in the depth region from the surface of the metal plate 10 to about 40 nm may be about 40 at% or less.

The maximum value of the nickel atom concentration in the depth region from the surface of the metal plate 10 to about 10 nm may be about 10 at% or less. In detail, the maximum value of the nickel atom concentration at a depth of about 5 nm to about 10 nm, for example, in the depth of the first region based on the surface, may be about 10 at% or less. In more detail, the maximum value of the nickel atom concentration from a depth of about 5 nm to a depth of about 10 nm (the first region) from the surface may be about 5 at% to about 10 at%.

The maximum value of the nickel atom concentration in a depth region of about 15 nm from the surface of the metal plate 10 may be about 25 at% or less. In detail, the maximum value of the nickel atom concentration at a depth of about 10 nm to about 15 nm, for example, the depth of the second region based on the surface, may be about 25 at% or less. In more detail, the maximum value of the nickel atom concentration from a depth of about 10 nm to a depth of about 15 nm (the second region) from the surface may be 15 at% to about 25 at%. In more detail, the maximum value of the nickel atom concentration from a depth of about 10 nm to a depth of about 15 nm (second region) from the surface may be about 18 at% to about 22 at%.

The maximum value of the nickel atom concentration in a depth region of about 20 nm from the surface of the metal plate 10 may be about 40 at% or less. In detail, the maximum value of the nickel atom concentration at a depth of about 15 nm to about 20 nm, for example, the depth of the third region based on the surface, may be about 40 at% or less. In more detail, the maximum value of the nickel atom concentration from a depth of about 15 nm to a depth of about 20 nm (the third region) from the surface may be about 35 at% or less. More specifically, the maximum value of the nickel atom concentration from a depth of about 15 nm to a depth of about 20 nm (the third region) from the surface may be about 30 at% to about 35 at%.

The maximum value of the nickel atom concentration in a depth region of about 25 nm from the surface of the metal plate 10 may be about 40 at% or less. In detail, the maximum value of the nickel atom concentration at a depth of about 25 nm from the surface may be about 35 at% or less. In more detail, the maximum value of the nickel atom concentration at a depth of about 20 nm to about 25 nm based on the surface, for example, the depth of the fourth region may be about 35 at% or less. In more detail, the maximum value of the nickel atom concentration from a depth of about 20 nm to a depth of about 25 nm (the fourth region) from the surface may be about 30 at% to about 35 at%.

The maximum value of the nickel atom concentration in the depth region from the surface of the metal plate 10 to about 30 nm may be about 40 at% or less. In detail, the maximum value of the nickel atom concentration at a depth of about 30 nm or less from the surface may be about 30 at% to about 38 at%. The maximum value of the nickel atom concentration at a depth of about 25 nm to about 30 nm based on the surface, for example, the depth of the fifth region may be about 30 at% to about 38 at%. In more detail, the maximum value of the nickel atom concentration from a depth of about 25 nm to a depth of about 30 nm (fifth region) from the surface may be about 33 at% to about 37 at%.

The maximum value of the nickel atom concentration in a depth region of about 35 nm from the surface of the metal plate 10 may be about 40 at% or less. In detail, the maximum value of the nickel atom concentration at a depth of about 35 nm from the surface may be about 30 at% to about 38 at%. In more detail, the maximum value of the nickel atom concentration at a depth of about 30 nm to about 35 nm based on the surface, for example, the depth of the sixth region may be about 30 at% to about 38 at%. In more detail, the maximum value of the nickel atom concentration from a depth of about 30 nm to a depth of about 35 nm (sixth region) from the surface may be about 33 at% to about 36 at%.

The concentration of nickel atoms in the outer portion SP of the metal plate 10 may vary. In detail, the maximum value of the nickel atom concentration in the depth region up to about 15 nm from the surface of the metal plate 10 is greater than the maximum value of the nickel atom concentration in the depth region up to about 10 nm from the surface of the metal plate 10 . can In addition, the maximum value of the nickel atom concentration in the depth region from the surface of the metal plate 10 to about 20 nm is greater than the maximum value of the nickel atom concentration in the depth region from the surface of the metal plate 10 to about 15 nm. can That is, the nickel atom concentration may gradually increase as the depth increases in a depth region of about 20 nm or less from the surface of the metal plate 10 .

In addition, the oxygen atom concentration according to the surface depth of the metal plate 10 will be described with reference to FIG. 2 . Referring to FIG. 2 , the concentration of oxygen atoms included in the outer portion SP of the metal plate 10 may be different depending on the depth. For example, the maximum value of the oxygen atom concentration in the outer portion SP of the metal plate 10 may be about 55 at% or more. In detail, the maximum value of the oxygen atom concentration in the depth region from the surface of the metal plate 10 to about 40 nm may be about 55 at% or more.

The maximum value of the oxygen atom concentration in a depth region of about 10 nm from the surface of the metal plate 10 may be about 65 at% or less. In detail, the maximum value of the oxygen atom concentration at a depth of about 5 nm to about 10 nm based on the surface of the metal plate 10 , for example, the depth of the first region may be about 65 at% or less. In more detail, the maximum value of the oxygen atom concentration from a depth of about 5 nm to a depth of about 10 nm (the first region) from the surface may be about 55 at% to about 65 at%.

The maximum value of the oxygen atom concentration in a depth region of about 15 nm from the surface of the metal plate 10 may be about 65 at% or less. The maximum value of the oxygen atom concentration at a depth of up to about 15 nm from the surface may be from about 55 at% to about 65 at%. The maximum value of the oxygen atom concentration at a depth of about 10 nm to about 15 nm, for example, the depth of the second region based on the surface of the metal plate 10 may be about 65 at% or less. In detail, the maximum value of the oxygen atom concentration from a depth of about 10 nm to a depth of about 15 nm (the second region) from the surface may be about 40 at% or more. More specifically, the maximum value of the oxygen atom concentration from a depth of about 10 nm to a depth of about 15 nm (the second region) from the surface may be about 40 at% to about 65 at%. More specifically, the maximum value of the oxygen atom concentration from a depth of about 10 nm to a depth of about 15 nm (the second region) from the surface may be about 40 at% to about 45 at%.

The maximum value of the oxygen atom concentration in a depth region of about 20 nm from the surface of the metal plate 10 may be about 65 at% or less. The maximum value of the oxygen atom concentration at a depth of about 15 nm to about 20 nm based on the surface of the metal plate 10 , for example, the depth of the third region may be about 65 at% or less. In detail, the maximum value of the oxygen atom concentration from a depth of about 15 nm to a depth of about 20 nm (the third region) from the surface may be about 20 at% or more. More specifically, the maximum value of the oxygen atom concentration from a depth of about 15 nm to a depth of about 20 nm (the third region) from the surface may be about 20 at% to about 50 at%. More specifically, the maximum value of the oxygen atom concentration from a depth of about 15 nm to a depth of about 20 nm (the third region) from the surface may be about 22 at% to about 27 at%.

The maximum value of the oxygen atom concentration in a depth region of about 25 nm from the surface of the metal plate 10 may be about 65 at% or less. The maximum value of the oxygen atom concentration at a depth from a depth of about 20 nm to about 25 nm based on the surface of the metal plate 10 , for example, the depth of the fourth region may be about 65 at% or less. In detail, the maximum value of the oxygen atom concentration from a depth of about 20 nm to a depth of about 25 nm (the fourth region) from the surface may be about 10 at% or more. In more detail, the maximum value of the oxygen atom concentration from a depth of about 20 nm to a depth of about 25 nm (the fourth region) from the surface may be about 10 at% to about 30 at%. More specifically, the maximum value of the oxygen atom concentration from a depth of about 20 nm to a depth of about 25 nm (the fourth region) from the surface may be about 15 at% to about 20 at%.

The maximum value of the oxygen atom concentration in a depth region of about 30 nm from the surface of the metal plate 10 may be about 65 at% or less. Based on the surface of the metal plate 10, the maximum value of the oxygen atom concentration in the depth from about 25 nm to about 30 nm, for example, in the fifth region may be about 65 at% or less. In detail, the maximum value of the oxygen atom concentration from a depth of about 25 nm to a depth of about 30 nm (fifth region) from the surface may be about 10 at% or more. In more detail, the maximum value of the oxygen atom concentration from a depth of about 25 nm to a depth of about 30 nm (fifth region) from the surface may be about 10 at% to about 30 at%. In more detail, the maximum value of the oxygen atom concentration from a depth of about 25 nm to a depth of about 30 nm (fifth region) from the surface may be about 10 at% to about 15 at%.

The maximum value of the oxygen atom concentration in a depth region of about 35 nm from the surface of the metal plate 10 may be about 65 at% or less. Based on the surface of the metal plate 10 , the maximum value of the oxygen atom concentration may be about 65 at% or less at a depth from a depth of about 30 nm to a depth of about 35 nm, for example, a depth of the sixth region. In detail, the maximum value of the oxygen atom concentration from a depth of about 30 nm to a depth of about 35 nm (sixth region) from the surface may be about 5 at% or more. In more detail, the maximum value of the oxygen atom concentration from a depth of about 30 nm to a depth of about 35 nm (sixth region) from the surface may be about 5 at% to about 15 at%. In more detail, the maximum value of the oxygen atom concentration from a depth of about 30 nm to a depth of about 35 nm (sixth region) from the surface may be about 5 at% to about 10 at%.

The maximum value of the oxygen atom concentration in a depth region of about 50 nm from the surface of the metal plate 10 may be about 65 at% or less. From a depth of about 35 nm to a depth of about 40 nm, a depth of about 40 nm to a depth of about 45 nm and a depth of about 45 nm to a depth of about 50 nm relative to the surface, such as the seventh region, the eighth region and the first The maximum value of the oxygen atom concentration at the depth of region 9 may be about 65 at% or less. In detail, the maximum value of the oxygen atom concentration in the depth of the seventh to ninth regions may be about 10 at% or less. In more detail, the maximum value of the oxygen atom concentration in the depth of the seventh to ninth regions may be about 5 at% to about 10 at%.

The oxygen atom concentration in the outer portion SP of the metal plate 10 may have a maximum value in a depth region of about 15 nm from the surface. Specifically, it may have a maximum value at a depth of about 8 nm to about 12 nm from the surface.

In addition, the oxygen atom concentration in the outer portion SP of the metal plate 10 may vary. In detail, the maximum value of the oxygen atoms in the depth region from the surface of the metal plate 10 to about 10 nm is the maximum value of the oxygen atoms in the depth region from the depth region of about 10 nm to about 15 nm from the surface of the metal plate 10 . can be larger In addition, the maximum value of the oxygen atoms in a depth region from a depth of about 10 nm to about 15 nm from the surface of the metal plate 10 is the oxygen in a depth region from a depth of about 15 nm to about 20 nm from the surface of the metal plate 10 . It can be greater than the maximum value of an atom. In addition, the maximum value of the oxygen atoms in a depth region from a depth of about 15 nm to about 20 nm from the surface of the metal plate 10 is the oxygen in a depth region from a depth of about 20 nm to about 25 nm from the surface of the metal plate 10 . It can be greater than the maximum value of an atom. In addition, the maximum value of the oxygen atoms in a depth region from a depth of about 20 nm to about 25 nm from the surface of the metal plate 10 is the oxygen in a depth region from a depth of about 25 nm to about 30 nm from the surface of the metal plate 10 . It can be greater than the maximum value of an atom. In addition, the maximum value of the oxygen atoms in a depth region from a depth of about 25 nm to about 30 nm from the surface of the metal plate 10 is the oxygen in a depth region from a depth of about 30 nm to about 35 nm from the surface of the metal plate 10 . It can be greater than the maximum value of an atom. In addition, the maximum value of the oxygen atoms in the depth region from the surface of the metal plate 10 from a depth of about 30 nm to about 35 nm is the oxygen in the depth region from a depth of about 35 nm to about 40 nm from the surface of the metal plate 10 It can be greater than the maximum value of an atom. In addition, the maximum value of the oxygen atoms in a depth region from a depth of about 35 nm to about 40 nm from the surface of the metal plate 10 is the oxygen in a depth region from a depth of about 40 nm to about 45 nm from the surface of the metal plate 10 . It can be greater than the maximum value of an atom. In addition, the maximum value of the oxygen atoms in a depth region from a depth of about 40 nm to about 45 nm from the surface of the metal plate 10 is the oxygen in a depth region from a depth of about 45 nm to about 50 nm from the surface of the metal plate 10 . It can be greater than the maximum value of an atom. That is, the oxygen atom concentration may gradually decrease as the depth increases from a depth of about 5 nm or more from the surface of the metal plate 10 .

In addition, the carbon atom concentration according to the surface depth of the metal plate 10 will be described with reference to FIG. 2 . Referring to FIG. 2 , the concentration of carbon atoms included in the outer portion SP of the metal plate 10 may be different depending on the depth.

The maximum value of the carbon atom concentration in a depth region of about 10 nm from the surface of the metal plate 10 may be about 35 at% or less. In detail, the maximum value of the carbon atom concentration at a depth of about 5 nm to about 10 nm based on the surface of the metal plate 10 , for example, the depth of the first region may be about 35 at% or less. In more detail, the maximum value of the carbon atom concentration from a depth of about 5 nm to a depth of about 10 nm (the first region) from the surface may be about 10 at% or less.

In addition, the maximum value of the carbon atom concentration in a depth region of about 15 nm from the surface of the metal plate 10 may be about 35 at% or less. In detail, the maximum value of the carbon atom concentration at a depth of about 10 nm to about 15 nm based on the surface, for example, the depth of the second region may be about 35 at% or less. In more detail, the maximum value of the carbon atom concentration from a depth of about 10 nm to a depth of about 15 nm (the second region) from the surface may be about 5 at% or less.

In addition, the maximum value of the carbon atom concentration in a depth region of about 20 nm from the surface of the metal plate 10 may be about 35 at% or less. In detail, the maximum value of the carbon atom concentration at a depth of about 15 nm to about 20 nm based on the surface, for example, the depth of the third region may be about 35 at% or less. More specifically, the maximum value of the carbon atom concentration from a depth of about 15 nm to a depth of about 20 nm (the third region) from the surface may be about 5 at% or less.

The carbon atom concentration in the outer portion SP of the metal plate 10 may vary. In detail, the maximum value of the carbon atom concentration in the depth region of about 10 nm or less from the surface of the metal plate 10 is the carbon atom concentration in the depth region from the depth of about 10 nm to about 15 nm from the surface of the metal plate 10. It can be greater than the maximum. And, the maximum value of the carbon atom concentration in a depth region from a depth of about 10 nm to about 15 nm from the surface of the metal plate 10 is the depth region from a depth of about 15 nm to about 20 nm from the surface of the metal plate 10. It may be greater than the maximum value of the carbon atom concentration. That is, the carbon atom concentration may gradually decrease as the depth increases in the depth region from the surface of the metal plate 10 to about 20 nm or less.

The outer portion SP of the metal plate 10 may include an oxide layer. For example, the outer portion SP may include an oxide layer including an oxide. In detail, the outer portion SP may include an oxide layer having an oxygen atom concentration of 5 at% or more. That is, a portion having an oxygen atom concentration of 5 at% or more may be defined as an oxide layer, and the oxide layer may have a thickness of about 40 nm or more from the surface of the metal plate 10 .

3 to 4 are graphs illustrating an analysis of iron (Fe) characteristics of the surface of a deposition mask according to an embodiment by using an X-ray elemental analysis method.

Figure 3 is a diagram showing a graph for the binding energy (binding energy) and signal intensity (intensity, c / s) for each sputtering cycle, Figure 4 is to analyze the trend for the binding energy for each cycle It is a diagram illustrating an exploded view of the graph of FIG. 3 . Here, one cycle means that the sputtering is performed for 0.5 minutes, and the first cycle means that the sputtering is performed for 0.5 minutes (min), and the signal intensity is not an absolute value, and a specific value among the measured total binding energy. Relative value of binding energy. That is, performing sputtering once by X-ray elemental analysis may mean sputtering from the surface of the metal plate 10 to a depth of about 5 nm or less, and based on a depth of about 5 nm, about 0.4 nm to about 5 nm deeper It may mean measuring an element included in the region. For example, in the first round, an element included in a depth (first region) of about 5 nm to about 10 nm from the surface of the metal plate 10 may be analyzed. In addition, the third cycle means that sputtering is performed for 1.5 minutes, and elements included in a region from a depth of 15 nm to a depth of about 20 nm (the third region) can be analyzed based on the surface of the metal plate 10 .

A peak value in the binding energy range of an orbital of about 705 eV to about 725 eV will be described with reference to FIGS. 3 and 4 .

Referring to FIGS. 3 and 4 , it can be seen that the peak value for the above-described binding energy range changes according to the sputtering cycle in the outer portion SP of the metal plate 10 . In detail, it can be seen that the peak value for the binding energy range changes as it goes deeper from the surface of the metal plate 10 , and through this, it can be seen that the material included in the outer part SP is different depending on the depth.

In general, when pure iron (Fe metal) is included, the orbital may have a peak intensity value at a binding energy of about 706.7 eV. Specifically, when pure iron is included, the orbital may have a peak intensity value in a first range defined as a binding energy range of about 706.4 eV to about 707 eV. In addition, when iron oxide (Fe ₂ O ₃ ) is included, the orbital may have a peak intensity value at a binding energy of about 710.8 eV. Specifically, when iron oxide is included, the orbital may have a peak intensity value in the second range defined as a binding energy range of about 710.5 eV to about 711.1 eV.

The outer portion SP of the metal plate 10 according to the embodiment may include an oxide layer including an oxide. For example, the outer portion SP may include iron oxide (Fe ₂ O ₃ ). In addition, the amount of the iron oxide may vary according to the depth of the surface in the outer portion (SP).

c/s (counter per second, XPS count rate) Binding Energy (eV) 1st round (depth of about 5 nm to 10 nm) 2nd round (depth of about 10nm to 15nm) 3rd round (depth of about 15nm to 20nm) 4th round (depth of about 20nm to 25nm) 5th round (depth of about 25nm to 30nm) 6th round (depth of about 30 nm to 35 nm) Fe metal 706.4 3130 2855 4657.5 8040 11765 14217.5 706.5 2995 3045 5060 8760 13632.5 15907.5 706.6 2992.5 3052.5 5085 9262.5 14800 17660 706.7 3115 2967.5 5020 9447.5 15585 18937.5 706.8 2910 2920 5087.5 10010 16495 20345 706.9 3050 3155 5237.5 10275 16770 20342.5 707 3015 3085 5615 10622.5 16705 20217.5 Fe ₂ O ₃ 710.5 7467.5 7552.5 13212.5 13402.5 13060 13137.5 710.6 7585 7727.5 13227.5 13415 13522.5 13082.5 710.7 7800 7917.5 13357.5 13135 13025 13195 710.8 7790 7880 12992.5 13332.5 13190 12897.5 710.9 7822.5 8000 13077.5 13512.5 13215 13205 711 7987.5 7865 12802.5 13507.5 13375 13102.5 711.1 7772.5 7957.5 12985 13195 13407.5 13005

Referring to Table 1, the metal plate 10 according to the embodiment has a signal intensity (intensity, c/s) value of an X-ray elemental analysis method according to a sputtering cycle, that is, a depth, for example, a peak intensity value (c/s, XPS). It can be seen that the counting rate) changes.

First, pure iron (Fe metal) will be described. Pure iron may have an orbital having a peak intensity value in a binding energy range of about 706.4 eV to about 707 eV, such as in the first range. In detail, each cycle may have a peak intensity value in the first range. For example, the peak intensity value for the first range may gradually increase as the number of times increases. That is, the peak intensity value for the first range may gradually increase as the depth from the surface of the outer portion SP of the metal plate increases.

The pure iron may have a maximum peak intensity value at each sputtering cycle. That is, the pure iron may each have a maximum peak intensity value in a depth region according to the cycle. For example, the pure iron may have a first peak intensity that is a maximum peak intensity value in the third sputtering cycle. In detail, the pure iron may have a first peak intensity that is a maximum peak value in a depth region (third region) from a depth of about 15 nm to about 20 nm from the surface.

Next, iron oxide (Fe ₂ O ₃ ) will be described. The iron oxide orbital may have a peak intensity value in a binding energy range of about 710.5 eV to about 711.1 eV, for example, in the second range. In detail, each cycle may have a peak intensity value in the second range. For example, the peak intensity value for the second range may gradually increase as the number of times increases. In detail, the peak intensity value for the second range may gradually increase as the depth increases from the surface of the metal plate 10 to a depth of about 25 nm or less. In particular, the peak intensity values for the second range increase from the surface to a second region (a region from a depth of about 10 nm to a depth of about 15 nm) to a third region (a region from a depth of about 15 nm to a depth of about 20 nm). may increase rapidly as a result. That is, the ratio of iron oxide may rapidly increase as the depth increases in the depth region from the surface to about 20 nm.

The iron oxide may have a maximum peak intensity value in each sputtering cycle. That is, the iron oxide may each have a maximum peak intensity value in a depth region according to the cycle. For example, the iron oxide may have a second peak intensity that is a maximum peak intensity value in the third sputtering cycle. In detail, the iron oxide may have a second peak intensity that is a maximum peak value in a depth region (third region) from a depth of about 15 nm to about 20 nm from the surface.

That is, referring to Table 1 and FIGS. 2 to 4 , it can be seen that the amount of pure iron (Fe metal) included in the outer part SP gradually increases as it deepens from the surface, and in the outer part SP It can be seen that the amount of iron oxide (Fe ₂ O ₃ ) included is maximum at a depth of up to about 25 m or less.

In addition, referring to Table 1 and FIGS. 2 to 4 , the concentration values of oxygen atoms and iron atoms rapidly change as the depth increases from the second region to the third region of the metal plate 10 . Able to know. And, referring to Table 1, the peak intensity values of the pure iron (Fe metal) and iron oxide (Fe ₂ O ₃ ) increase as the depth increases from the second region to the third region of the metal plate 10 . It can be seen that there is a rapid change.

Accordingly, in the embodiment, the second peak intensity for the second range and the third peak intensity for the first range may have a certain ratio. For example, the first peak intensity with respect to the second peak intensity may be about 0.7 or less (first peak intensity / second peak intensity = about 0.7 or less). In detail, the first peak intensity with respect to the second peak intensity may be about 0.5 or less. When the ratio of the first peak intensity to the second peak intensity exceeds 0.7, it may mean that the ratio of iron oxide (Fe ₂ O ₃ ) included in the outer part SP of the metal plate 10 is low. . In detail, the low oxygen content included in the outer portion SP may mean that the ratio of iron oxide (Fe ₂ O ₃ ) is low and the ratio of iron (Fe metal) is high. Accordingly, the small face holes V1 and the face holes V2 respectively formed on one surface and the other surface of the metal plate 10 may not be uniformly formed, and therefore, the face holes V1 and the face holes V2 ), the shape and diameter of the through-holes TH communicating with each other are not uniform, so that deposition defects may occur.

The peak value of the orbital in the binding energy range of about 850 eV to about 870 eV will be described with reference to FIGS. 5 and 6 .

Referring to FIGS. 5 and 6 , it can be seen that the peak value for the above-described binding energy range changes according to the number of sputtering cycles in the outer portion SP of the metal plate 10 . In detail, it can be seen that the peak value for the binding energy range changes as it goes deeper from the surface of the metal plate 10 , and through this, it can be seen that the material included in the outer part SP is different depending on the depth.

In general, when pure nickel (Ni metal) is included, the orbital may have a peak intensity value at a binding energy of about 852.6 eV. Specifically, when pure nickel is included, the orbital may have a peak intensity value in a third range defined as a binding energy range of about 852.3 eV to about 852.9 eV. In addition, when nickel hydroxide (Ni(OH) ₂ ) is included, the orbital may have a peak intensity value at a binding energy of about 856.2 eV. Specifically, when nickel hydroxide is included, the orbital may have a peak intensity value in the second range defined as a binding energy range of about 855.9 eV to about 856.5 eV.

The outer portion SP of the metal plate 10 according to the embodiment may include hydroxide. For example, the outer portion SP may include nickel hydroxide (Ni(OH) ₂ ). In addition, the amount of nickel hydroxide may vary according to the depth of the surface in the outer portion SP.

c/s (counter per second, XPS count rate) Binding Energy (eV) 1st round (depth of about 5 nm to 10 nm) 2nd round (about 10nm to 15nm depth) 3rd round (depth of about 15nm to 20) 4th round (depth of about 20nm to 25nm) 5th round (depth of about 25nm to 30nm) 6th round (depth of about 30 nm to 35 nm) Ni metal 852.3 8827.5 9180 13825 18430 21377.5 21592.5 852.4 8980 9162.5 13987.5 19190 23547.5 23585 852.5 9377.5 9622.5 13815 20055 25375 25567.5 852.6 9182.5 9360 14537.5 21667.5 27347.5 27975 852.7 9252.5 9467.5 14460 22797.5 29045 29645 852.8 9270 9437.5 15170 23417.5 30660 31455 852.9 9177.5 9252.5 15140 23712.5 31525 33155 Ni(OH) ₂ 855.9 10422.5 10345 14845 16140 17455 17702.5 856 10107.5 10182.5 14522.5 16202.5 17192.5 17472.5 856.1 10270 10102.5 14422.5 15997.5 17227.5 18065 856.2 9865 10180 14757.5 15850 17482.5 17267.5 856.3 10087.5 10702.5 14482.5 15695 17037.5 17977.5 856.4 9910 10210 14267.5 16012.5 17487.5 17930 856.5 9870 10120 14802.5 16407.5 17205 18030

Referring to Table 2, it can be seen that in the metal plate 10 according to the embodiment, the signal intensity (c/s) value of the X-ray elemental analysis method, for example, the peak intensity value (c/s, XPS counting rate), changes according to the depth. have.

First, pure nickel (Ni metal) will be described. Pure nickel may have an orbital having a peak strength value in a binding energy range of about 852.3 eV to about 852.9 eV, such as in the third range. In detail, each cycle may have a peak intensity value in the third range. For example, the peak intensity value for the third range may gradually increase as the number of times increases. That is, the peak intensity value for the third range may gradually increase as the depth from the surface of the outer portion SP of the metal plate increases. In detail, the peak intensity value for the third range at a depth of about 30 nm from the surface of the metal plate 10 may gradually increase as the depth increases. In particular, the peak intensity value for the third range may rapidly increase as the depth from the second region to the third region of the metal plate 10 increases. That is, the ratio of the pure nickel may rapidly increase as the depth increases from the second region to the third region of the metal plate 10 .

The pure nickel may have a maximum peak intensity value in each sputtering cycle. That is, the pure nickel may each have a maximum peak intensity value in a depth region according to the cycle. For example, the pure nickel may have a third peak intensity that is a maximum peak intensity value in the third sputtering cycle. In detail, the pure nickel may have a third peak intensity that is a maximum peak value in a depth region (third region) from a depth of about 15 nm to about 20 nm from the surface.

Next, nickel hydroxide (Ni(OH) ₂ ) will be described. The nickel hydroxide orbital may have a peak intensity value in a binding energy range of about 855.9 eV to about 856.5 eV, for example, in the fourth range. In detail, each cycle may have a peak intensity value in the fourth range. For example, the peak intensity value for the fourth range may gradually increase as the number of times increases. In detail, the peak intensity value for the fourth range may gradually increase as the depth increases in the outer portion SP of the metal plate 10 . In detail, the peak intensity value for the fourth range may gradually increase as the depth increases from a depth of about 10 nm or more from the surface of the outer part SP. In particular, the peak intensity value for the fourth range may rapidly increase as the depth from the second region to the third region of the metal plate 10 increases. That is, the proportion of nickel hydroxide may rapidly increase as the depth increases from the second region to the third region from the surface.

The nickel hydroxide may have a maximum peak intensity value in each sputtering cycle. That is, the nickel hydroxide may each have a maximum peak intensity value in the depth region according to the cycle. For example, the nickel hydroxide may have a fourth peak intensity, which is a maximum peak intensity value in the third sputtering cycle. In detail, the nickel hydroxide may have a fourth peak intensity that is a maximum peak value in a depth region (third region) from a depth of about 15 nm to about 20 nm from the surface.

That is, referring to Table 2, FIGS. 2, 5 and 6, the amount of pure nickel (Ni metal) and nickel hydroxide (Ni(OH) ₂ ) included in the outer part SP gradually increases as the depth increases from the surface. it can be seen that

In addition, referring to Table 2, FIGS. 2, 5 and 6, the concentration of oxygen atoms and the concentration of nickel atoms change rapidly as they deepen from the second region to the third region of the metal plate 10. it can be seen that And, referring to Table 2, it can be seen that the amounts of pure nickel (Ni metal) and nickel hydroxide (Ni(OH) ₂ ) rapidly change as the depth from the second region to the third region increases.

Accordingly, in the embodiment, the fourth peak intensity with respect to the fourth range and the third peak intensity with respect to the third range may have a certain ratio. For example, the third peak intensity with respect to the fourth peak intensity may be about 1.3 or less (third peak intensity / fourth peak intensity = about 1.3 or less). In detail, the third peak intensity with respect to the fourth peak intensity may be about 1.1 or less. In more detail, the fourth peak intensity with respect to the fourth peak intensity may be about 1.05 or less. When the ratio of the third peak intensity to the fourth peak intensity exceeds about 1.3, it can be seen that the oxygen content included in the outer portion SP of the metal plate 10 is low. In detail, the low oxygen content included in the outer portion SP may mean that the ratio of nickel hydroxide (Ni(OH) ₂ ) is low and the ratio of nickel (Ni metal) is high. Accordingly, the small-faced holes V1 and the opposite-facing holes V2 respectively formed on one surface and the other surface of the metal plate 10 may not be uniformly formed because the ratio of nickel hydroxide included in the outer portion SP is low, and thus For this reason, since the shape and diameter of the through hole TH communicating the small face hole V1 and the face hole V2 are not uniform, a deposition defect may occur.

The atomic concentration of the metal plate 10 according to the embodiment may change according to the depth. For example, the atomic concentration of the outer portion SP of the metal plate 10 may change as it deepens from the surface. In detail, the maximum value of the oxygen atom concentration at a depth up to about 30 nm or less from the surface, which is the outer portion SP, may be about 55 at% or more. That is, the outer portion SP of the metal plate 10 including the surface may include a large amount of oxygen.

In addition, the first peak intensity, which is the maximum peak value in the first range of the binding energy of 706.4 eV to 707 eV at a specific depth from the surface of the metal plate 10, is in the second range of the binding energy of 710.5 eV to 711.1 eV. It may have a predetermined ratio with the second peak intensity, which is the maximum peak value. And, the third peak intensity, which is the maximum peak value in the third range of the binding energy of 852.3 eV to 852.9 eV at a specific depth from the surface of the metal plate 10, is the maximum in the fourth range of the binding energy of 855.9 eV to 856.5 eV. It may have a predetermined ratio with the third peak intensity, which is a peak value. Accordingly, the outer portion SP of the metal plate 10 may include oxides and hydroxides. In detail, the outer portion SP may include iron oxide (Fe ₂ O ₃ ) and nickel hydroxide (Ni(OH) ₂ ), and the iron oxide and nickel hydroxide are included in the above-described ranges. It is possible to improve the visual etch factor.

Accordingly, it is possible to control the thickness of the oxide film formed on the surface of the metal plate 10 , which is the base material of the deposition mask 100 , and to improve the quality. In addition, it is possible to improve the adhesion between the metal plate and the photoresist layer, and it is possible to prevent overetching of one surface and the other surface of the metal plate 10 in the etching process of forming the small face holes V1 and the face holes V2. In addition, it is possible to prevent the photoresist layer from being peeled by the over-etching during the etching process. Therefore, it is possible to uniformly and more precisely form the small face hole V1, the face hole V2, and the through hole TH connecting the face hole V1 and the face hole V2, and the deposition mask 100 ) to uniformly deposit the organic material on the substrate when depositing the organic material, thereby minimizing the deposition defect.

The deposition mask 100 according to the embodiment may be manufactured from the above-described metal plate 10 . In the deposition mask 100 , the region where etching is not performed may include an outer portion SP including a surface corresponding to the above-described metal plate 10 and an inner portion other than the outer portion SP. Hereinafter, a deposition mask 100 according to an embodiment will be described with reference to the drawings.

7 to 9 are conceptual views for explaining a process of depositing an organic material on the substrate 300 using the deposition mask 100 according to the embodiment. 7 is a view showing an organic material deposition apparatus including a deposition mask 100 according to an embodiment, and FIG. 8 is a diagram in which the deposition mask 100 according to the embodiment is tensioned to be mounted on the mask frame 200 . It is a drawing showing that Also, FIG. 10 is a diagram illustrating that a plurality of deposition patterns are formed on the substrate 300 through a plurality of through-holes of the deposition mask 100 .

7 to 9 , the organic material deposition apparatus may include a deposition mask 100 , a mask frame 200 , a substrate 300 , an organic material deposition container 400 , and a vacuum chamber 500 .

The deposition mask 100 may include a metal. For example, the deposition mask 100 may have the same composition as the metal plate 10 described above. In detail, the deposition mask 100 may be invar containing iron (Fe) and nickel (Ni). In more detail, the deposition mask 100 contains iron (Fe) in an amount of about 63.5 wt% to about 64.5 wt% and nickel (Ni) in an amount of about 35.5 wt% to about 36.5 wt% Invar. may include

The deposition mask 100 may include an effective portion for deposition, and the effective portion may include a plurality of through holes TH. The deposition mask 100 may be a deposition mask substrate including a plurality of through holes TH. In this case, the through hole may be formed to correspond to the pattern to be formed on the substrate. The through hole TH may be formed not only in the effective area positioned at the center of the effective part, but also in an outer area positioned outside the effective part and surrounding the effective area. The deposition mask 100 may include an ineffective portion other than the effective portion including the deposition area. The through hole may not be located in the ineffective portion.

The mask frame 200 may include an opening. The plurality of through-holes of the deposition mask 100 may be disposed on a region corresponding to the opening. Accordingly, the organic material supplied to the organic material deposition container 400 may be deposited on the substrate 300 . The deposition mask 100 may be disposed and fixed on the mask frame 200 . For example, the deposition mask 100 may be fixed by welding on the mask frame 200 by pulling it with a constant tensile force.

The deposition mask 100 may be stretched in opposite directions at the outermost edge of the deposition mask 100 . In the deposition mask 100 , one end of the deposition mask 100 and the other end opposite to the one end may be pulled in opposite directions in the longitudinal direction of the deposition mask 100 . One end and the other end of the deposition mask 100 may face each other and be disposed in parallel. One end of the deposition mask 100 may be any one of the ends forming the four side surfaces disposed on the outermost side of the deposition mask 100 . For example, the deposition mask 100 may be stretched with a tensile force of about 0.1 kgf to about 2 kgf. In detail, the deposition mask 100 may be tensioned with a force of about 0.4 kgf to about 1.5 kgf. Accordingly, the stretched deposition mask 100 may be mounted on the mask frame 200 .

Subsequently, the deposition mask 100 may fix the deposition mask 100 to the mask frame 200 by welding an ineffective portion of the deposition mask 100 . Next, a portion of the deposition mask 100 disposed outside the mask frame 200 may be removed by cutting or the like.

The substrate 300 may be a substrate used for manufacturing a display device. For example, the substrate 300 may be a substrate 300 for depositing an organic material for an OLED pixel pattern. An organic pattern of red, green, and blue may be formed on the substrate 300 to form pixels having three primary colors of light. That is, an RGB pattern may be formed on the substrate 300 . Although not shown in the drawings, a white organic material pattern may be further formed on the substrate 300 in addition to the red, green, and blue organic material patterns. That is, a WRGB pattern may be formed on the substrate 300 .

The organic material deposition vessel 400 may be a crucible. An organic material may be disposed inside the crucible.

As a heat source and/or current are supplied to the crucible in the vacuum chamber 500 , the organic material may be deposited on the substrate 100 .

Referring to FIG. 9 , the deposition mask 100 may include one surface 101 and the other surface 102 facing the first surface.

The one surface 101 of the deposition mask 100 may include a small face hole V1 , and the other surface 102 of the deposition mask 100 may include a large face hole V2 . The through hole TH may communicate with each other by a communication part CA through which a boundary between the small-faced hole V1 and the large-faced hole V2 is connected.

The deposition mask 100 may include a first etching surface ES1 in the small surface hole V1 . The deposition mask 100 may include a second etching surface ES2 in the facing hole V2 . The first etching surface ES1 in the small face hole V1 and the second etching surface ES2 in the large face hole V2 may communicate with each other to form a through hole. For example, the first etching surface ES1 in one small face hole V1 may communicate with the second etching surface ES2 in one large face hole V2 to form one through hole.

A width of the face-to-face hole V2 may be greater than a width of the small-faced hole V1. In this case, the width of the small face hole V1 may be measured on the one surface 101 , and the width of the large face hole V2 may be measured on the other surface 102 .

The small face hole V1 may be disposed toward the substrate 300 . The small face hole V1 may be disposed close to the substrate 300 . Accordingly, the small surface hole V1 may have a shape corresponding to the deposition material, that is, the deposition pattern DP.

The facing hole V2 may be disposed toward the organic material deposition vessel 400 . Accordingly, the facing hole V2 can accommodate the organic material supplied from the organic material deposition container 400 in a wide width, and the face hole V2 can accommodate the organic material supplied from the organic material deposition container 400 through the small face hole V1 having a smaller width than the facing hole V2. A fine pattern can be quickly formed on the substrate 300 .

10 is a diagram illustrating a plan view of the deposition mask 100 according to the embodiment. Referring to FIG. 10 , the deposition mask 100 according to the embodiment may include a deposition area DA and a non-deposition area NDA.

The deposition area DA may be an area for forming a deposition pattern. The deposition area DA may include an effective portion for forming a deposition pattern. The deposition area DA may include a pattern area and a non-pattern area. The pattern region may be a region including a small face hole V1, a face hole V2, a through hole TH, and an island portion IS, and the non-pattern region includes a small face hole V1 and a face hole V2. ), the through hole TH, and the island portion IS may be an area not included. Here, the deposition area DA may include an effective area including an effective area and an outer area, which will be described later, and an ineffective area in which deposition is not included. Accordingly, the effective portion may be the pattern region, and the ineffective portion may be the non-pattern region.

Also, one deposition mask 100 may include a plurality of deposition areas DA. For example, the deposition area DA of the embodiment may include a plurality of effective portions capable of forming a plurality of deposition patterns. The effective portion may include a plurality of effective areas AA1 , AA2 , and AA3 .

The plurality of effective areas AA1 , AA2 , and AA3 may be disposed in a central area of the effective part. The plurality of effective areas AA1 , AA2 , and AA3 may include a first effective area AA1 , a second effective area AA2 , and a third effective area AA3 . Here, one deposition area DA may be a first effective portion including a first effective area AA1 and a first outer area OA1 surrounding the first effective area AA1 . Also, one deposition area DA may be a second effective portion including a second effective area AA2 and a second outer area OA2 surrounding the second effective area AA2 . Also, one deposition area DA may be a third effective portion including a third effective area AA3 and a third outer area OA3 surrounding the third effective area AA3 .

In the case of a small display device such as a smart phone, an effective portion of any one of the plurality of deposition regions included in the deposition mask 100 may be for forming one display device. Accordingly, one deposition mask 100 may include a plurality of effective portions, and thus a plurality of display devices may be formed at the same time. Accordingly, the deposition mask 100 according to the embodiment may improve process efficiency.

Alternatively, in the case of a large display device such as a television, a plurality of effective portions included in one deposition mask 100 may be a part for forming one display device. In this case, the plurality of effective parts may be for preventing the mask from being deformed by a load.

The plurality of effective areas AA1 , AA2 , and AA3 may be disposed to be spaced apart from each other. In detail, the plurality of effective areas AA1 , AA2 , and AA3 may be disposed to be spaced apart from each other in the long axis direction of the deposition mask 100 . The deposition area DA may include a plurality of isolation areas IA1 and IA2 included in one deposition mask 100 . Separation areas IA1 and IA2 may be disposed between adjacent effective portions. The separation areas IA1 and IA2 may be spaced apart areas between a plurality of effective parts. For example, a first separation area is provided between the first outer area OA1 surrounding the first effective area AA1 and the second outer area OA2 surrounding the second effective area AA2 . (IA1) may be deployed. In addition, a second separation area IA2 is disposed between the second outer area OA2 surrounding the second effective area AA2 and the third outer area OA3 surrounding the third effective area AA3 . This can be placed That is, adjacent effective portions may be distinguished from each other by the separation regions IA1 and IA2 , and one deposition mask 100 may support a plurality of effective portions.

The deposition mask 100 may include non-deposition areas NDA on both sides of the deposition area DA in the longitudinal direction. The deposition mask 100 according to the embodiment may include the non-deposition area NDA on both sides of the deposition area DA in a horizontal direction.

The non-deposition region NDA of the deposition mask 100 may be a region not involved in deposition. The non-deposition area NDA may include frame fixing areas FA1 and FA2 for fixing the deposition mask 100 to the mask frame 200 . In addition, the non-deposition area NDA may include half-etched portions HF1 and HF2 and an open portion.

As described above, the deposition area DA may be an area for forming a deposition pattern, and the non-deposition area NDA may be an area not involved in deposition. In this case, a surface treatment layer different from that of the metal plate 10 may be formed in the deposition area DA of the deposition mask 100 , and a surface treatment layer may not be formed in the non-deposition area NDA. have. Alternatively, a surface treatment layer different from the material of the metal plate 10 may be formed on only one surface of the one surface 101 of the deposition mask 100 or the other surface 102 opposite to the one surface 101 . Alternatively, a surface treatment layer different from that of the metal plate 10 may be formed on only a portion of one surface of the deposition mask 100 . For example, one surface and / or the other surface of the deposition mask 100, all and / or part of the deposition mask 100 may include a surface treatment layer having a slower etching rate than the material of the metal plate 10, The etching factor may be improved. Accordingly, in the deposition mask 100 of the embodiment, it is possible to form fine through-holes with high efficiency. For example, the deposition mask 100 of the embodiment may have a resolution of 400 PPI or higher. Specifically, the deposition mask 100 can form a deposition pattern having a high resolution of 500 PPI or more with high efficiency. Here, the surface treatment layer may mean to include an element different from the material of the metal plate 10 or a metal material having a different composition of the same element. This will be described in more detail in the manufacturing process of the deposition mask, which will be described later.

The non-deposition area NDA may include half-etched portions HF1 and HF2 . For example, the non-deposition area NDA of the deposition mask 100 may include a first half-etched portion HF1 on one side of the deposition area DA, and A second half-etched part HF2 may be included on the other side opposite to the one side. The first half-etched part HF1 and the second half-etched part HF2 may be regions in which grooves are formed in the depth direction of the deposition mask 100 . The first half-etched part HF1 and the second half-etched part HF2 may have a groove part having a thickness of about 1/2 of the thickness of the deposition mask, so that stress during tension of the deposition mask 100 may be dispersed. have. In addition, the half-etched portions HF1 and HF2 are preferably formed to be symmetrical in the X-axis direction or symmetrical in the Y-axis direction with respect to the center of the deposition mask 100 . Through this, the tensile force in both directions can be uniformly adjusted.

The half-etched portions HF1 and HF2 may be formed in various shapes. The half-etched parts HF1 and HF2 may include semicircular grooves. The groove may be formed on at least one of one surface 101 of the deposition mask 100 and the other surface 102 opposite to the one surface 101 . Preferably, the half-etched portions HF1 and HF2 may be formed on one surface 101 corresponding to the small face hole V1. Accordingly, since the half-etched portions HF1 and HF2 may be formed simultaneously with the small face hole V1, process efficiency may be improved. In addition, the half-etched portions HF1 and HF2 may disperse stress that may be generated due to a size difference between the facing holes V2 . However, the embodiment is not limited thereto, and the half-etched portions HF1 and HF2 may have a rectangular shape. For example, the first half-etched part HF1 and the second half-etched part HF2 may have a rectangular or square shape. Accordingly, the deposition mask 100 can effectively disperse stress.

In addition, the half-etched portions HF1 and HF2 may include a curved surface and a flat surface. A plane of the first half-etched part HF1 may be disposed adjacent to the first effective area AA1 , and the plane may be disposed horizontally with an end of the deposition mask 100 in a longitudinal direction. The curved surface of the first half-etched part HF1 may be convex toward one end of the deposition mask 100 in the longitudinal direction. For example, the curved surface of the first half-etched part HF1 may be formed so that a half point of the vertical length of the deposition mask 100 corresponds to the radius of the semicircular shape.

In addition, a plane of the second half-etched part HF2 may be disposed adjacent to the third effective area AA3 , and the plane may be disposed horizontally with an end of the deposition mask 100 in the longitudinal direction. have. The curved surface of the second half-etched part HF2 may be convex toward the other end in the longitudinal direction of the deposition mask 100 . For example, the curved surface of the second half-etched part HF2 may be formed such that a half of the vertical length of the deposition mask 100 corresponds to a radius of a semicircular shape.

The half-etched portions HF1 and HF2 may be formed at the same time as the small-faced hole V1 or the large-faced hole V2 is formed. This can improve process efficiency. In addition, the grooves formed on the one surface 101 and the other surface 102 of the deposition mask 100 may be formed to be shifted from each other. Through this, the half-etched portions HF1 and HF2 may not pass through.

Also, the deposition mask 100 according to the embodiment may include four half-etched portions. For example, since the half-etching parts HF1 and HF2 may include an even number of half-etching parts HF1 and HF2, stress may be more efficiently distributed.

In addition, the half-etched portions HF1 and HF2 may be further formed in the non-effective portion UA of the deposition area DA. For example, a plurality of the half-etched portions HF1 and HF2 may be dispersed in all or a part of the ineffective portion UA in order to distribute stress during tension of the deposition mask 100 .

That is, the deposition mask 100 according to the embodiment may include a plurality of half-etched portions. In detail, the deposition mask 100 according to the embodiment is illustrated as including the half-etched portions HF1 and HF2 only in the non-deposition area NDA, but is not limited thereto, and the deposition area DA and the non-deposition area ( NDA), at least one area may further include a plurality of half-etched parts. Accordingly, the stress of the deposition mask 100 may be uniformly distributed.

The non-deposition area NDA may include frame fixing areas FA1 and FA2 for fixing the deposition mask 100 to the mask frame 200 . For example, a first frame fixing area FA1 may be included on one side of the deposition area DA, and a second frame fixing area FA2 may be formed on the other side opposite to the one side of the deposition area DA. may include The first frame fixing area FA1 and the second frame fixing area FA2 may be areas fixed to the mask frame 200 by welding.

The frame fixing areas FA1 and FA2 are disposed between the half-etched portions HF1 and HF2 of the non-deposition area NDA and the effective portions of the deposition area DA adjacent to the half-etched portions HF1 and HF2. can be For example, the first frame fixed area FA1 may include a first half-etched portion HF1 of the non-deposition area NDA and a second portion of the deposition area DA adjacent to the first half-etched portion HF1 . It may be disposed between the first effective area including the first effective area AA1 and the first outer area OA1 . For example, the second frame fixed area FA2 may include a second half-etched portion HF2 of the non-deposition area NDA and a second half-etched portion HF2 of the deposition area DA adjacent to the second half-etched portion HF2 . It may be disposed between the third effective portion including the third effective area AA3 and the third outer area OA3 . Accordingly, it is possible to simultaneously fix a plurality of deposition pattern portions.

In addition, the deposition mask 100 may include semicircular openings at both ends in the horizontal direction (X). The non-deposition area NDA of the deposition mask 100 may include one semicircular opening at both ends in a horizontal direction, respectively. For example, the non-deposition area NDA of the deposition mask 100 may include an open portion having an open center in the vertical direction Y on one side of the horizontal direction. For example, the non-deposition area NDA of the deposition mask 100 may include an open portion having an open center in a vertical direction on the other side opposite to the one side in the horizontal direction. That is, both ends of the deposition mask 100 may include open portions at 1/2 the length in the vertical direction. For example, both ends of the deposition mask 100 may have a horseshoe-like shape.

In this case, the curved surface of the open part may face the half-etched parts HF1 and HF2. Accordingly, the open portions located at both ends of the deposition mask 100 are the first half-etched portions HF1 and HF2 or the second half-etched portions HF1 and HF2 and the vertical length of the deposition mask 100 . The separation distance may be the shortest at 1/2 point.

In addition, a vertical length d1 of the first half-etched part HF1 or the second half-etched part HF2 may correspond to a vertical length d2 of the open part. Accordingly, when the deposition mask 100 is stretched, stress may be evenly distributed, thereby reducing wave deformation of the deposition mask 100 . Accordingly, the deposition mask 100 according to the embodiment may have uniform through-holes, and thus the deposition efficiency of the pattern may be improved. Preferably, the vertical length d1 of the first half-etched part HF1 or the second half-etched part HF2 is about 80% to about 200% of the vertical length d2 of the open part. (d1:d2 = 0.8~2:1). The vertical length d1 of the first half-etched part HF1 or the second half-etched part HF2 may be about 90% to about 150% of the vertical length d2 of the open part ( d1:d2 = 0.9 to 1.5:1). A length d1 in the vertical direction of the first half-etched part HF1 or the second half-etched part HF2 may be about 95% to about 110% of the vertical length d2 of the open part ( d1:d2 = 0.95 to 1.1:1).

Also, although not shown in the drawing, the half-etched portions HF1 and HF2 may be further formed in the ineffective portion UA of the deposition area DA. A plurality of the half-etched portions may be dispersed in all or a part of the ineffective portion UA in order to distribute stress during tension of the deposition mask 100 .

Also, the half-etched portions HF1 and HF2 may be formed in the frame fixing regions FA1 and FA2 and/or in the peripheral regions of the frame fixing regions FA1 and FA2. Accordingly, the deposition mask 100 is generated when the deposition mask 100 is fixed to the mask frame 200 and/or the deposition material is deposited after the deposition mask 100 is fixed to the mask frame 200 . ) can be uniformly distributed. Accordingly, the deposition mask 100 can be maintained to have uniform through-holes.

The deposition mask 100 may include a plurality of effective portions spaced apart in the longitudinal direction and ineffective portions UA other than the effective portions. In detail, the deposition area DA may include a plurality of effective portions and non-effective portions UA other than the effective portions. The plurality of effective parts may include a first effective part, a second effective part, and a third effective part. In addition, the first effective portion may include a first effective area AA1 and a first outer area OA1 surrounding the first effective area AA1 . The second effective portion may include a second effective area AA2 and a second outer area OA2 surrounding the second effective area AA2 . The third effective portion may include a third effective area AA3 and a third outer area OA3 surrounding the third effective area AA3 .

The effective portion includes a plurality of face holes V1 formed on one surface of the deposition mask 100 , a plurality of face holes V2 formed on the other surface opposite to the one surface, the face holes V1 and the face holes A plurality of through-holes TH formed by the communication portion CA to which the boundary of V2 is connected may be included.

In addition, the effective areas AA1 , AA2 , and AA3 may include an island portion IS supporting between the plurality of through-holes TH.

The island part IS may be positioned between adjacent through-holes TH among the plurality of through-holes TH. That is, in the effective areas AA1 , AA2 , and AA3 of the deposition mask 100 , an area other than the through hole TH may be the island part IS.

The island portion IS may mean a portion that is not etched on one surface 101 or the other surface 102 of the effective portion of the deposition mask 100 . In detail, the island portion IS may be an unetched region between the through hole and the through hole in the other surface 1021 on which the facing hole V2 of the effective portion of the deposition mask 100 is formed. Accordingly, the island portion IS may be disposed parallel to the one surface 101 of the deposition mask 100 .

The island part IS may be disposed on the same plane as the other surface 102 of the deposition mask 100 . Accordingly, the island portion IS may have the same thickness as at least a portion of the ineffective portion UA on the other surface 102 of the deposition mask 100 . In detail, the island portion IS may have the same thickness as an unetched portion of the ineffective portion on the other surface 102 of the deposition mask 100 . Accordingly, the deposition uniformity of the sub-pixels may be improved through the deposition mask 100 .

Alternatively, the island portion IS may be disposed on a plane parallel to the other surface 102 of the deposition mask 100 . Here, the parallel plane means the other surface 102 of the deposition mask 100 on which the island part IS is disposed by the etching process around the island part IS and the non-etched deposition mask ( 100) may include that the height difference of the other surface 102 is ± 1 μm or less.

The island portion IS may have a polygonal shape. Alternatively, the island portion IS may have a curved shape. That is, when viewed from the other surface 102 of the deposition mask 100 in a plan view, the island portion IS may have a polygonal or curved shape. For example, the upper surface of the island part IS may have a polygonal or curved shape. That is, the island part IS may have a polygonal or curved planar shape. The curved shape may mean a polygon having a plurality of sides and interior angles and a shape having at least one side curve. For example, when viewed in a plan view, the island portion IS may include a plurality of curves, and may have a curved shape in which the curves are connected. That is, the upper surface of the island part IS may have a polygonal shape or a curved shape by an etching process of forming the facing hole V1.

The deposition mask 100 is disposed to surround the effective areas AA1 , AA2 , and AA3 , and includes outer areas OA1 , OA2 , OA3 disposed outside the effective areas AA1 , AA2 and AA3 . can do. The effective area AA may be an inner area when the outermost through-holes for depositing an organic material among the plurality of through-holes are connected. The ineffective portion UA may be an outer region when the outermost through-holes for depositing an organic material among the plurality of through-holes are connected. For example, the ineffective portion UA may be an outer area when the outermost portion of the through-holds located at the outermost portion of the outer area OA are connected.

The non-effective portion UA includes the effective areas AA1 , AA2 , and AA3 of the deposition area DA, the area excluding the effective portion including the outer areas OA1 , OA2 and OA3 surrounding the effective area, and the non-deposition area. area (NDA). The first effective area AA1 may be located in the first outer area OA1 . The first effective area AA1 may include a plurality of through holes TH for forming a deposition material. The first outer area OA1 surrounding the outer side of the first effective area AA1 may include a plurality of through holes.

For example, the plurality of through-holes included in the first outer area OA1 is to reduce etching defects of the through-holes TH located at the outermost side of the first effective area AA1 . Accordingly, the deposition mask 100 according to the embodiment can improve the uniformity of the plurality of through-holes TH located in the effective areas AA1 , AA2 , and AA3 , thereby improving the quality of the deposition pattern manufactured through this. can be improved

Also, the shape of the through hole TH of the first effective area AA1 may correspond to the shape of the through hole of the first outer area OA1 . Accordingly, the uniformity of the through hole TH included in the first effective area AA1 may be improved. For example, the shape of the through hole TH of the first effective area AA1 and the shape of the through hole of the first outer area OA1 may be circular. However, the embodiment is not limited thereto, and the through-hole TH may have various shapes, such as a diamond pattern or an oval pattern.

The second effective area AA2 may be located in the second outer area OA2 . The second effective area AA2 may have a shape corresponding to that of the first effective area AA1 . The second outer area OA2 may have a shape corresponding to that of the first outer area OA1 .

The second outer area OA2 may further include two through holes, respectively, in a horizontal direction and a vertical direction from a through hole located at the outermost portion of the second effective area AA2 . For example, in the second outer area OA2 , two through-holes may be arranged in a horizontal direction at positions above and below the through-holes located at the outermost side of the second effective area AA2 , respectively. For example, in the second outer area OA2 , two through-holes may be arranged in a vertical line on the left and right sides of the through-holes located at the outermost side of the second effective area AA2 , respectively. The plurality of through-holes included in the second outer area OA2 is to reduce etching defects of the through-holes located at the outermost portion of the effective portion. Accordingly, the deposition mask according to the embodiment can improve the uniformity of the plurality of through-holes located in the effective portion, and thereby can improve the quality of the deposition pattern manufactured.

The third effective area AA3 may be included in the third outer area OA3 . The third effective area AA3 may include a plurality of through holes for forming a deposition material. The third outer area OA3 surrounding the third effective area AA3 may include a plurality of through holes.

The third effective area AA3 may have a shape corresponding to that of the first effective area AA1 . The third outer area OA3 may have a shape corresponding to that of the first outer area OA1 .

In addition, the through-holes TH included in the effective areas AA1 , AA2 , and AA3 may have a shape that partially corresponds to the through-holes included in the outer areas OA1 , OA2 and OA3 . For example, the through-holes included in the effective areas AA1 , AA2 , and AA3 may have different shapes from the through-holes located at the edge portions of the outer areas OA1 , OA2 and OA3 . Accordingly, the difference in stress according to the position of the deposition mask 100 may be adjusted.

11 and 12 are plan views of an effective area of the deposition mask 100 according to the embodiment, and FIG. 13 is another plan view of the deposition mask 100 according to the embodiment.

11 to 13 may be plan views of any one of the first effective area AA1 , the second effective area AA2 , and the third effective area AA3 of the deposition mask 100 according to the embodiment. 11 and 12 are for explaining the shape of the through-hole TH and the arrangement between the through-holes TH, and the deposition mask 100 according to the embodiment includes the through-hole TH shown in the drawing. ) is not limited to the number of

11 to 13 , the deposition mask 100 may include a plurality of through holes TH. In this case, the through-holes TH may be arranged in a line or alternately arranged depending on the direction. For example, the through-holes TH may be arranged in a line along the vertical axis and the horizontal axis, and may be arranged in a line along the vertical axis or the horizontal axis.

11 and 12 , the deposition mask 100 may include a plurality of through holes TH. In this case, the plurality of through holes TH may have a circular shape. In detail, a diameter Cx in a horizontal direction and a diameter Cy in a vertical direction of the through hole TH may correspond to each other.

The through-holes TH may be arranged in a line along the direction. For example, the through-holes TH may be arranged in a row along a vertical axis and a horizontal axis.

In detail, the first through-hole TH1 and the second through-hole TH2 may be arranged in a line along the transverse axis, and the third through-hole TH1 and the fourth through-hole TH4 may be arranged in a row along the transverse axis. have.

In addition, the first through-hole TH1 and the third through-hole TH3 may be arranged in a line along the vertical axis, and the second through-hole TH2 and the fourth through-hole TH4 may be arranged in a horizontal axis. have.

That is, when the through-holes TH are arranged in a row on the vertical and horizontal axes, respectively, the island portion IS is positioned between two diagonally adjacent through-holes TH that are in a direction crossing both the vertical and horizontal axes. can do. That is, the island portion IS may be positioned between two adjacent through-holes TH positioned in a diagonal direction.

For example, the island portion IS may be disposed between the first through hole TH1 and the fourth through hole TH4. Also, an island portion IS may be disposed between the second through hole TH2 and the third through hole TH3. The island portion IS may be positioned in an inclination direction of about +45 degrees and an inclination angle of about -45 degrees with respect to a horizontal axis crossing two adjacent through holes, respectively. Here, the direction of the inclination angle of about ±45 may mean a diagonal direction between the horizontal axis and the vertical axis, and the inclination angle in the diagonal direction may be measured on the same plane of the horizontal axis and the vertical axis.

Also, referring to FIG. 13 , another deposition mask 100 according to the embodiment may include a plurality of through holes. In this case, the plurality of through-holes may have an elliptical shape. In detail, a diameter Cx in a horizontal direction and a diameter Cy in a vertical direction of the through hole TH may be different from each other. For example, the diameter Cx in the horizontal direction of the through hole may be greater than the diameter Cy in the vertical direction. However, the embodiment is not limited thereto, and the through hole may have a rectangular shape, an octagonal shape, or a rounded octagonal shape.

The through-holes TH may be arranged in a line on any one axis of the vertical axis or the horizontal axis, and may be alternately arranged on the other axis.

In detail, the first through-hole TH1 and the second through-hole TH2 may be arranged in a row along the horizontal axis, and the third through-hole TH1 and the fourth through-hole TH4 are the first through-hole TH1. and the second through-hole TH2 may be disposed to be staggered along the longitudinal axis, respectively.

When the through-holes TH are arranged in a line in any one direction of the vertical axis or the horizontal axis and are alternately arranged in the other direction, two adjacent through-holes TH1 in the other direction of the vertical axis or the horizontal axis. The island part IS may be positioned between the TH2). Alternatively, the island portion IS may be positioned between the three through holes TH1 , TH2 , and TH3 positioned adjacent to each other. Among the three adjacent through holes TH1, TH2, and TH3, two through holes TH1 and TH2 are through holes arranged in a line, and the other through hole TH3 is adjacent in a direction corresponding to the line direction. In location, it may mean a through hole that may be disposed in a region between the two through holes TH1 and TH2. An island portion IS may be disposed between the first through hole TH1 , the second through hole TH2 , and the third through hole TH3 . Alternatively, the island portion IS may be disposed between the second through hole TH2 , the third through hole TH3 , and the fourth through hole TH4 .

In addition, in the case of measuring the horizontal diameter (Cx) and the vertical diameter (Cy) of the reference hole, which is any one of the through-holes in the deposition mask 100 according to the embodiment, the through-hole adjacent to the reference hole The deviation between the diameters Cx in the horizontal direction and the deviation between the diameters Cy in the vertical direction between the (TH) may be implemented as about 2% to about 10%. That is, when the size deviation between adjacent holes of one reference hole is about 2% to about 10%, uniformity of deposition can be secured. For example, a size deviation between the reference hole and the adjacent holes may be about 4% to about 9%. For example, a size deviation between the reference hole and the adjacent holes may be about 5% to about 7%. For example, a size deviation between the reference hole and the adjacent holes may be about 2% to about 5%. When the size deviation between the reference hole and the adjacent holes is less than about 2%, the moire generation rate may increase in the OLED panel after deposition. When the size deviation between the reference hole and the adjacent holes exceeds about 10%, the occurrence rate of color unevenness in the OLED panel after deposition may increase. The average deviation of the diameter of the through hole may be ±5㎛. For example, the average deviation of the diameter of the through hole may be ±3㎛. For example, the average deviation of the diameter of the through hole may be ±1㎛. In the embodiment, the deposition efficiency can be improved by implementing the size deviation between the reference hole and the adjacent holes within ±3 μm.

The island portion IS of FIGS. 11 to 13 may mean a non-etched surface between the through holes TH on the other surface of the deposition mask 100 on which the facing hole V2 of the effective area AA is formed. can In detail, the island portion IS is the other surface of the deposition mask 100 that is not etched except for the second etching surface ES2 and the through hole TH located in the facing hole in the effective area AA of the deposition mask. can The deposition mask 100 of the embodiment may be for deposition of high-resolution to ultra-high-resolution OLED pixels having a resolution of 400 PPI or more, specifically 400 PPI to 800 PPI or more.

For example, the deposition mask 100 of the embodiment may be for forming a deposition pattern having a high resolution of Full-HD (High Definition) having a resolution of 400 PPI or more. For example, the deposition mask 100 of the embodiment may be for deposition of OLED pixels in which the number of pixels in the horizontal and vertical directions is 1920*1080 or more, and 400 PPI or more. That is, one effective area included in the deposition mask 100 of the embodiment may be for forming the number of pixels with a resolution of 1920*1080 or higher.

For example, the deposition mask 100 of the embodiment may be for forming a deposition pattern having a high resolution of a quad high definition (QHD) having a resolution of 500 PPI or more. For example, the deposition mask 100 according to the embodiment may be for OLED pixel deposition in which the number of pixels in the horizontal and vertical directions is 2560*1440 or more and 530 PPI or more. Through the deposition mask 100 of the embodiment, the number of pixels per inch may be 530 PPI or more based on a 5.5-inch OLED panel. That is, one effective area included in the deposition mask 100 of the embodiment may be for forming the number of pixels with a resolution of 2560*1440 or higher.

For example, the deposition mask 100 of the embodiment may be for forming a deposition pattern having an ultra high resolution of Ultra High Definition (UHD) having a resolution of 700 PPI or higher. For example, in the deposition mask 100 of the embodiment, the number of pixels in the horizontal and vertical directions is 3840*2160 or more, and a deposition pattern having Ultra High Definition (UHD) level resolution for OLED pixel deposition of 794 PPI or more is formed. it may be for

A diameter of the through hole TH may be a width between the communication portions CA. In detail, the diameter of the through hole TH may be measured at a point where the end of the etching surface in the small face hole V1 and the end of the etching surface in the large face hole V2 meet. The diameter of the through hole TH may be measured in any one of a horizontal direction, a vertical direction, and a diagonal direction. The diameter of the through hole TH measured in the horizontal direction may be 33 μm or less. Alternatively, the diameter of the through hole TH measured in the horizontal direction may be 33 μm or less. Alternatively, the diameter of the through hole TH may be an average value of values measured in a horizontal direction, a vertical direction, and a diagonal direction.

Accordingly, the deposition mask 100 according to the embodiment may implement QHD-level resolution. For example, the diameter of the through hole TH may be about 15 μm to about 33 μm. For example, the diameter of the through hole TH may be about 19 μm to about 33 μm. For example, the diameter of the through hole TH may be about 20 μm to about 27 μm. When the diameter of the through hole TH is greater than about 33 μm, it may be difficult to implement a resolution of 500 PPI or higher. On the other hand, when the diameter of the through hole TH is less than about 15 μm, a deposition defect may occur.

11 and 12 , a pitch between two adjacent through holes TH among a plurality of through holes in the horizontal direction may be about 48 μm or less. For example, a pitch between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 20 μm to about 48 μm. For example, a pitch between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 30 μm to about 35 μm. Here, the distance may mean a distance P1 between the center of two adjacent first through-holes TH1 and the center of the second through-hole TH2 in the horizontal direction. Alternatively, the distance may mean a distance P2 between the center of two adjacent first island parts and the center of the second island part in the horizontal direction. Here, the center of the island portion IS may be the center of the other non-etched surface between the four through-holes TH adjacent in the horizontal and vertical directions. For example, the center of the island portion IS is adjacent to the first through hole TH1 in the vertical direction with respect to the two first and second through holes TH1 and TH2 adjacent in the horizontal direction. A horizontal axis connecting the edges of one island portion IS located in a region between the third through hole TH3 and the second through hole TH2 and a fourth through hole TH4 adjacent in the vertical direction and a vertical axis connecting the edges This may mean the point of intersection.

Also, referring to FIG. 13 , a pitch between two adjacent through-holes TH among a plurality of through-holes in the horizontal direction may be about 48 μm or less. For example, a pitch between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 20 μm to about 48 μm. For example, a pitch between two adjacent through holes TH among the plurality of through holes TH in the horizontal direction may be about 30 μm to about 35 μm. Here, the distance may mean a distance P1 between the center of two adjacent first through-holes TH1 and the center of the second through-hole TH2 in the horizontal direction. Also, the distance may mean a distance P2 between the center of two adjacent first island parts and the center of the second island part in the horizontal direction. Here, the center of the island portion IS may be a center on the other non-etched surface between one through-hole and two adjacent through-holes in the vertical direction. Alternatively, here, the center of the island portion IS may be the center of the other non-etched surface between the two through-holes and one adjacent through-hole in the vertical direction. That is, the center of the island portion IS is the center on the other non-etched surface between the three adjacent through-holes, and the three adjacent through-holes may mean that a triangular shape can be formed when the centers are connected.

A measurement direction of a diameter of the through hole TH may be the same as a measurement direction of a distance between two adjacent through holes TH. The distance between the through-holes TH may be a measurement of a distance between two adjacent through-holes TH in a horizontal or vertical direction.

That is, the deposition mask 100 according to the embodiment may deposit an OLED pixel having a resolution of 400 PPI or higher. In detail, in the deposition mask 100 according to the embodiment, the diameter of the through-holes TH is about 33 μm or less, and the pitch between the through-holes TH is about 48 μm or less, so that the deposition mask 100 has a resolution of 500 PPI or more. OLED pixels can be deposited. In more detail, a green organic material having a resolution of 500 PPI or higher may be deposited. That is, by using the deposition mask 100 according to the embodiment, it is possible to implement QHD-level resolution.

A diameter of the through-hole TH and a distance between the through-holes TH may be sized to form a green sub-pixel. For example, the diameter of the through hole TH may be measured based on a green (G) pattern. Since the green (G) pattern has a low recognition rate through vision, a larger number than the red (R) pattern and the blue (B) pattern is required, and the interval between the through holes (TH) is the red (R) pattern and the blue color. (B) It can be narrower than the pattern. The deposition mask 100 may be an OLED deposition mask for realizing QHD display pixels.

For example, the deposition mask 100 may be for depositing at least one sub-pixel among red (R), first green (G1), blue (B), and second green (G2) sub-pixels. In detail, the deposition mask 100 may be for depositing a red (R) sub-pixel. Alternatively, the deposition mask 100 may be for depositing a blue (B) sub-pixel. Alternatively, the deposition mask 100 may be used to simultaneously form a first green (G1) sub-pixel and a second green (G2) sub-pixel.

The pixel arrangement of the organic light emitting diode display may be arranged in the order of 'red (R) - first green (G1) - blue (B) - second green (G2)' (RGBG). In this case, red (R) - first green (G1) may form one pixel RG, and blue (B) - second green (G2) may form another pixel (BG). In the organic light emitting diode display having such an arrangement, since the deposition interval of the green light emitting organic material is narrower than that of the red light emitting organic material and the blue light emitting organic material, a deposition mask 100 similar to the present invention may be required.

In addition, in the deposition mask 100 according to the embodiment, the diameter of the through hole TH may be about 20 μm or less in the horizontal direction. Accordingly, the deposition mask 100 according to the embodiment may implement UHD level resolution. For example, in the deposition mask 100 according to the embodiment, the diameter of the through-hole TH is about 20 μm or less and the distance between the through-holes is about 32 μm or less, so it has a resolution of 800 PPI. OLED pixels can be deposited. That is, UHD level resolution can be realized using the deposition mask according to the embodiment.

A diameter of the through-hole and an interval between the through-holes may be sized to form a green sub-pixel. The deposition mask may be an OLED deposition mask for realizing UHD display pixels.

FIG. 14 is a diagram illustrating each of the cross-sections overlaid in order to explain the height step and size between the cross-section in the A-A' direction and the cross-section in the B-B' direction of FIGS. 11 and 12 .

First, a cross section in the direction A-A' of FIGS. 11 and 12 will be described. A-A' direction is a cross-section crossing a central area between two adjacent first through-holes TH1 and TH3 in a vertical direction. That is, the cross section in the A-A' direction may not include the through hole TH.

In the cross section in the A-A' direction, the island portion IS, which is the other surface of the deposition mask that is not etched, may be positioned between the etch surface ES2 in the large hole and the etch surface ES2 in the large hole. Accordingly, the island portion IS may include a surface parallel to the unetched surface of the deposition mask. Alternatively, the island portion IS may include a surface that is the same as or parallel to the other non-etched surface of the deposition mask 100 .

Next, the cross section in the B-B' direction of FIGS. 11 and 12 will be described. The direction B-B' is a cross-section crossing the center of each of the two adjacent first through-holes TH1 and TH2 in the horizontal direction. That is, the cross section in the B-B' direction may include a plurality of through holes TH.

One rib RB may be positioned between the adjacent third through hole TH3 and the fourth through hole TH4 in the B-B' direction. Another rib RB may be positioned between the fourth through-hole TH4 and the fourth through-hole in the horizontal direction, but between the third through-hole TH3 and the fifth through-hole located in the opposite direction. One through hole TH may be positioned between the one rib and the other rib. That is, one through hole TH may be positioned between two adjacent ribs RB in the horizontal direction.

In addition, in the cross section in the B-B' direction, the rib RB, which is a region in which the etching surface ES2 in the facing hole and the etching surfaces ES2 in the adjacent facing hole are connected to each other, may be located. Here, the rib RB may be a region in which a boundary between two adjacent facing holes is connected. Since the rib RB is an etched surface, a thickness of the rib RB may be smaller than that of the island portion IS. For example, the width of the island portion IS may be about 2 μm or more. That is, a width of a portion remaining unetched on the other surface in a direction parallel to the other surface may be about 2 μm or more. When the width of one end and the other end of one island portion IS is about 2 μm or more, the total volume of the deposition mask 100 may be increased. The deposition mask 100 having such a structure ensures sufficient rigidity with respect to the tensile force applied in the organic material deposition process, etc., and may be advantageous in maintaining the uniformity of the through-holes.

15 is a view showing a cross-sectional view taken in the direction B-B' of FIG. 11 or 12 . Referring to FIG. 15 , an enlarged cross section of the rib RB in the effective area and the through hole TH between the ribs RB according to the cross section B-B' of FIGS. 11 and 12 and FIG. 14 will be described. do.

In the deposition mask 100 according to the embodiment, the thickness in the effective area AA where the through hole TH is formed by etching and the thickness in the non-etched area UA may be different from each other. In detail, the thickness of the rib RB may be smaller than the thickness of the non-etched non-effective portion UA.

In the deposition mask 100 according to the embodiment, the thickness of the ineffective portion UA may be greater than the thickness of the effective areas AA1 , AA2 , and AA3 . In this case, the island portion IS is an unetched area, and the island portion IS may correspond to a maximum thickness of the ineffective portion UA to the non-deposition area NDA. For example, in the deposition mask 100 , the maximum thickness of the non-effective portion UA to the non-deposition area NDA may be about 30 μm or less. Accordingly, the maximum thickness of the island portion IS may be about 30 μm or less, and the thickness of the effective areas AA1 , AA2 , and AA3 excluding the island portion IS is greater than the thickness of the ineffective portion UA. can be small In detail, in the deposition mask 100 , the maximum thickness of the non-effective portion UA to the non-deposition area NDA may be about 25 μm or less. For example, in the deposition mask of the embodiment, the maximum thickness of the non-effective portion to the non-deposition region may be about 15 μm to about 25 μm. Accordingly, the maximum thickness of the island portion IS may be about 15 μm to about 25 μm. When the maximum thickness of the ineffective portion or the non-deposition region of the deposition mask according to the embodiment exceeds about 30 μm, the thickness of the metal plate 10 , which is the raw material of the deposition mask 100 , becomes thick, so that a fine penetration It may be difficult to form the hole TH. In addition, when the maximum thickness of the ineffective portion UA to the non-deposition area NDA of the deposition mask 100 is less than about 15 μm, it may be difficult to form a through hole of a uniform size because the thickness of the metal plate is thin. .

The maximum thickness T3 measured at the center of the rib RB may be about 15 μm or less. For example, the maximum thickness T3 measured at the center of the rib RB may be about 7 μm to about 10 μm. For example, the maximum thickness T3 measured at the center of the rib RB may be about 6 μm to about 9 μm. When the maximum thickness T3 measured at the center of the rib RB exceeds about 15 μm, it may be difficult to form an OLED deposition pattern having a high resolution of 500 PPI or higher. Also, when the maximum thickness T3 measured at the center of the rib RB is less than about 6 μm, it may be difficult to form a uniform deposition pattern.

The height H1 of the small face hole of the deposition mask 100 may be about 0.2 to about 0.4 times the maximum thickness T3 measured at the center of the rib RB. For example, the maximum thickness T3 measured at the center of the rib RB is about 7 μm to about 9 μm, and the height H1 between one surface of the deposition mask 100 and the communication part is about 1.4. μm to about 3.5 μm. The height H1 of the small face hole of the deposition mask 100 may be about 3.5 μm or less. For example, the height of the small face hole V1 may be about 0.1 μm to about 3.4 μm. For example, the height of the face hole V1 of the deposition mask 100 may be about 0.5 μm to about 3.2 μm. For example, the height of the face hole V1 of the deposition mask 100 may be about 1 μm to about 3 μm. Here, the height may be measured in the thickness measurement direction of the deposition mask 100 , that is, the depth direction, and may be a measurement of the height from one surface of the deposition mask 100 to the communication portion. In detail, in the plan views of FIGS. 10 to 14 , measurements may be made in the horizontal direction (x-direction) and the vertical direction (y-direction), respectively, and in the z-axis direction forming 90 degrees.

When the height between the one surface of the deposition mask 100 and the communication part is greater than about 3.5 μm, deposition defects may occur due to a shadow effect in which the deposition material spreads to an area larger than the area of the through hole during OLED deposition. can

In addition, the pore diameter W1 of the mask 100 for deposition on one surface on which the small face hole V1 is formed and the pore diameter W2 at the communication portion that is the boundary between the small face hole V1 and the large face hole V2 are mutually may be similar or different. A hole diameter W1 on one surface of the deposition mask 100 on which the small surface hole V1 is formed may be larger than a hole diameter W2 on the communication part.

For example, a difference between the hole diameter W1 on one surface of the deposition mask 100 and the hole diameter W2 on the communication part may be about 0.01 μm to about 1.1 μm. For example, a difference between the pore diameter W1 on one surface of the deposition mask and the pore diameter W2 on the communication portion may be about 0.03 μm to about 1.1 μm. For example, a difference between the pore diameter W1 on one surface of the deposition mask and the pore diameter W2 on the communication portion may be about 0.05 μm to about 1.1 μm.

When the difference between the pore diameter W1 on one surface of the deposition mask 100 and the pore diameter W2 on the communication portion is greater than about 1.1 μm, deposition failure may occur due to a shadow effect.

In addition, one end E1 of the facing hole V2 located on the other surface 102 opposite to the one surface 101 of the deposition mask 100 and between the small face hole V1 and the facing hole V2 It may have an inclination angle θ1 connecting one end E2 of the communication part. For example, one end E1 of the facing hole V2 may mean a point at which a rib RB, which is a boundary of the second inner surface ES2 in the facing hole V2, is located. One end E2 of the communication part may mean an end of the through hole TH. The inclination angle θ1 connecting one end E1 of the facing hole V2 and one end E2 of the communication part may be in a range of 40 degrees to 55 degrees. Accordingly, a high-resolution deposition pattern of 400 PPI or higher, specifically 500 PPI or higher, may be formed, and the island portion IS may be present on the other surface 102 of the deposition mask 100 .

16 is a diagram illustrating a manufacturing process of the deposition mask 100 according to the embodiment.

Referring to FIG. 16 , the manufacturing process of the deposition mask 100 according to the embodiment includes preparing a metal plate 10 , forming a through hole in the metal plate 10 using a photoresist layer, and the photo The method may include removing the resist layer to form a deposition mask including the through hole.

In the step of preparing the metal plate 10 , the metal plate 10 may be manufactured by a cold rolling method. In detail, the metal plate 10 may be formed through melting, forging, hot rolling, normalizing, cold rolling, and annealing processes.

The metal plate 10 may include a nickel (Ni) alloy. In detail, the metal plate 10 may include an alloy of iron (Fe) and nickel (Ni). In more detail, the metal plate 10 may include iron (Fe), nickel (Ni), oxygen (O), and chromium (Cr). For example, the metal plate 10 may contain about 60 wt% to about 65 wt% of iron, and about 35 wt% to about 40 wt% of nickel. In detail, the metal plate 10 may contain about 63.5 wt% to about 64.5 wt% of iron, and about 35.5 wt% to about 36.5 wt% of nickel. In addition, the metal plate 10 is a small amount of carbon (C), silicon (Si), sulfur (S), phosphorus (P), manganese (Mn), titanium (Ti), cobalt (Co), copper (Cu), At least one element selected from among silver (Ag), vanadium (V), niobium (Nb), indium (In), and antimony (Sb) may be further included. Here, a small amount may mean 1 wt% or less. That is, the metal plate 10 may include Invar.

In addition, the step of preparing the metal plate 10 may further include a thickness reduction step according to the target thickness of the metal plate 10 . The step of reducing the thickness may be a step of forming a required thickness by rolling or etching more than the metal plate 10 that has undergone the rolling process.

For example, a metal plate 10 having a thickness of about 30 μm may be required to manufacture a deposition mask for realizing a resolution of 400 PPI or higher, and about 20 μm to manufacture a deposition mask for implementing a resolution of 500 PPI or higher. A metal plate 10 with a thickness of about 30 μm to about 30 μm may be required, and a metal plate 10 with a thickness of about 15 μm to about 20 μm may be required to manufacture a deposition mask capable of implementing a resolution of 800 PPI or higher.

In addition, the step of preparing the metal plate 10 may further include a step of surface treatment.

The surface treatment may be a step of rearranging atoms included in the surface of the metal plate 10 . The step may be a step of rearranging atoms of the outer portion SP. For example, the atomic concentration of the outer portion SP may be changed by the surface treatment. In detail, through the above steps, the concentration of atoms included in a depth of about 50 nm or less from the surface of the metal plate 10 may be changed. In addition, the thickness of the oxide film formed on the surface of the metal plate 10 through the above step may be changed. In detail, the content of the material formed on the surface of the metal plate 10 through the above step may be changed.

The surface treatment may be a surface treatment step for improving an etch factor. In detail, a nickel alloy such as invar may have a high etching rate in the initial stage of etching, and thus the etching factor of the small face holes V1 and/or the large face holes V2 may be reduced. In detail, one surface and the other surface of the metal plate 10 may be overetched in the process of forming the small face hole V1 and/or the face hole V2 . In addition, the photoresist layer may be peeled off by the over-etching during etching. Accordingly, it may be difficult to form the through-hole TH having a fine size and the through-hole TH at a uniform position.

Accordingly, a surface treatment layer for improving an etch factor may be formed on the surface of the metal plate 10 . The surface treatment layer may be an etch barrier layer having a slower etch rate than the inner portion IP of the metal plate 10 . As described above, the surface treatment layer may have a different atomic concentration from the inner portion IP. In addition, the surface treatment layer may have a different crystal plane and crystal structure from the inner portion IP of the metal plate 10 . For example, since the surface treatment layer includes elements different from those of the metal plate 10 , a crystal plane and a crystal structure may be different from each other. For example, in the same corrosion environment, the surface treatment layer may have a different corrosion potential from the metal plate 10 . For example, when treated with the same etchant at the same temperature for the same time, the surface treatment layer may have a corrosion current or corrosion potential different from that of the metal plate 10 .

The surface treatment may be a heat treatment step after acid treatment of the surface of the metal plate 10 . The surface treatment step may be a step of heat-treating the metal plate 10 at a temperature of about 250° C. to about 300° C. for about 250 seconds to about 350 seconds. In detail, the surface treatment may be a step of heat-treating the metal plate 10 at a temperature of 270° C. to about 290° C. for about 280 seconds to about 320 seconds. Preferably, the step of treating the surface may be a step of heat treatment at a temperature of about 280° C. for about 300 seconds.

In addition, the surface treatment may be performed in an atmospheric atmosphere.

The atoms included in the metal plate 10 may be rearranged by the surface treatment. In detail, the atomic concentration of iron, nickel, oxygen, etc. of the outer part SP of the metal plate 10 may be changed by the surface treatment step, and the thickness of the oxide film formed on the surface may be adjusted. For example, at a depth of up to about 15 nm from the surface of the metal plate 10 by the surface treatment, the maximum value of the iron (Fe) atomic concentration may be about 40 at% or less, and nickel (Ni) The maximum value of the atomic concentration may be about 25 at% or less, and the maximum value of the oxygen (O) atomic concentration may be about 55 at% to about 65 at%. The etching factor may be improved by increasing the oxygen (O) atom concentration.

The surface treatment may be a step of forming a surface treatment layer on one and/or both surfaces, the entire and/or effective area of the metal plate 10 . Accordingly, it is possible to prevent overetching of one surface and the other surface of the metal plate 10 in the process of forming the small-faced holes V1 and the large-faced holes V2 by the etching process. In addition, it is possible to prevent the photoresist layer from being peeled by the over-etching during the etching process. Accordingly, it is possible to uniformly and more precisely form the small face hole V1, the face hole V2, and the through hole TH connecting the face hole V1 and the face hole V2, and the deposition mask ( 100), the organic material can be uniformly deposited on the substrate when the organic material is deposited, so that the deposition defect can be minimized.

Next, a step of forming a through hole in the metal plate 10 using a photoresist layer may be performed. The forming of the through hole includes forming a first groove for forming a small face hole V1 on one surface of the metal plate 10 and forming a large face hole V2 on the other surface of the metal plate 10. The method may include forming a second groove to form a through hole.

A photoresist layer may be disposed on one surface of the metal plate 10 to form the small face holes V1 in the metal plate 10 . The patterned first photoresist layer PR1 may be disposed on one surface of the metal plate 10 by exposing and developing the photoresist layer. In addition, on the other surface opposite to one surface of the metal plate 10, an etch-resisting layer such as a coating layer or a film layer for inhibiting etching may be disposed.

Subsequently, a first groove may be formed on one surface of the metal plate 10 by etching through the open portion of the first photoresist layer PR1 . In detail, the open portion of the first photoresist layer PR1 may be exposed to an etchant or the like, so that etching may occur in the open portion of one surface of the metal plate 10 in which the first photoresist layer PR1 is not disposed. .

The forming of the first groove may be a step of etching the metal plate 10 having a thickness T1 of about 20 μm to about 30 μm until it is about 1/2 thick. The depth of the first groove formed through this step may be about 10 μm to 15 μm. That is, the thickness T2 of the metal plate measured at the center of the first groove formed after this step may be about 10 μm to about 15 μm.

The forming of the first groove may be anisotropic etching or a semi-additive process (SAP). In detail, in the step, an anisotropic etching or semi-addition method may be used to half-etch the metal plate 10 through the open portion of the first photoresist layer PR. Accordingly, in the groove formed through the half etching, the etching rate in the depth direction (the b direction) may be faster than the speed of the side etching (a direction) than the isotropic etching.

The etch factor of the face hole V1 may be 2.0 to 3.0. For example, the etch factor of the small face hole V1 may be 2.1 to 3.0. For example, the etching factor of the small face hole V1 may be 2.2 to 3.0.

Here, the etch factor is the depth (B) of the etched small face hole / the width (A) of the photoresist layer extending from the island portion IS on the small face hole and protruding in the center direction of the through hole TH (Etching Factor = B/A). A denotes an average value of the width of one side of the photoresist layer protruding on the one surface hole and the width of the other side opposite to the one side.

Thereafter, the first photoresist layer PR1 may be removed. That is, the first photoresist layer PR1 may be removed before the second photoresist layer PR2 is formed. In this case, an etch stop layer such as a coating layer or a film layer for preventing etching may be disposed on one surface of the metal plate 10 . For example, a protective layer may be formed on the side of the small face hole V1 so that the face hole V1 is not affected by the etching solution used when the face hole V2 is formed.

Then, a photoresist layer may be disposed to form a facing hole V2 on the other surface of the metal plate 10 . A patterned second photoresist layer PR2 may be disposed on the other surface of the metal plate 10 by exposing and developing the photoresist layer. A patterned second photoresist layer PR2 having an open portion for forming a facing hole V2 may be disposed on the other surface of the metal plate 10 .

The open portion of the second photoresist layer PR2 may be exposed to an etchant or the like, so that etching may occur in an open portion of the other surface of the metal plate 10 in which the second photoresist layer PR2 is not disposed. The other surface of the metal plate 10 may be etched by anisotropic etching or isotropic etching.

As etching is performed through the open portion of the second photoresist layer PR2 , the groove on one surface of the metal plate 10 may be connected to the facing hole V2 to form a through hole.

Next, the second photoresist layer PR2 may be removed. Accordingly, in the communication portion where the boundary between the face-to-face hole V2 formed on the one surface, the face-to-face hole V1 formed on the other surface opposite to the one surface, the face-to-face hole V2 and the small face hole V1 is connected It is possible to form the deposition mask 100 including the through hole TH formed by the

In the step of forming the through-hole, the step of forming the second groove for forming the face-to-face hole V2 is performed after the step of forming the first groove for forming the small-faced hole V1 to form the through-hole. It may be a forming step. In detail, in the step of forming the through hole, the first groove for forming the small face hole V1 may be formed by a roll-to-roll process. For example, a first groove for forming the small face hole V1 may be formed on the base material of the metal plate 10 by a roll-to-roll process. Thereafter, the base material of the metal plate 10 may be cut into a shape corresponding to the metal plate 10 , and a second groove for forming the facing hole V2 may be formed on the metal plate 10 .

Alternatively, in the step of forming the through hole, the step of forming the first groove for forming the small face hole V1 is performed after the step of forming the second groove for forming the face hole V2, so that the through hole is formed. It may be a step of forming a hole.

The deposition mask 100 formed through the above steps may include the same material as the metal plate 10 . For example, a region of the deposition mask 100 in which surface etching is not performed may include a material having the same composition as that of the outer portion SP of the metal plate 10 . In detail, the island portion IS of the deposition mask 100 may include a material having the same composition as that of the outer portion SP of the metal plate 10 . In more detail, an area in which etching is not performed among the island portion IS, the non-effective portion UA, and the non-deposition area NDA of the deposition mask 100 by the surface treatment is the portion of the metal plate 10 . It may include a material having the same composition as that of the outer part SP.

In the deposition mask 100 formed through the above steps, the maximum thickness at the center of the ribs RB may be smaller than the maximum thickness in the non-etched area. For example, the maximum thickness at the center of the rib RB may be about 15 μm. For example, the maximum thickness at the center of the ribs RB may be less than about 10 μm. However, the maximum thickness in the non-effective region of the deposition mask 100 may be about 20 μm to about 30 μm, and may be about 15 μm to about 25 μm. That is, the maximum thickness in the ineffective region of the deposition mask 100 may correspond to the thickness of the metal plate 10 prepared in the step of preparing the metal plate 10 .

17 and 18 are diagrams illustrating a deposition pattern formed through a deposition mask according to an embodiment.

Referring to FIG. 17 , in the deposition mask 100 according to the embodiment, the height H1 between one surface of the deposition mask 100 in which the small face hole V1 is formed and the communication part may be about 3.5 μm or less. For example, the height H1 may be about 0.1 μm to about 3.4 μm. For example, the height H1 may be about 0.5 μm to about 3.2 μm. For example, the height H1 may be about 1 μm to about 3 μm.

Accordingly, since the distance between the surface 101 of the deposition mask 100 and the substrate on which the deposition pattern is disposed may be close, deposition defects caused by the shadow effect may be reduced. For example, when the R, G, and B patterns are formed using the deposition mask 100 according to the embodiment, it is possible to prevent a defect in which different deposition materials are deposited in a region between two adjacent patterns. In detail, as shown in FIG. 18 , when the patterns are formed in the order of R, G, and B from the left, it is possible to prevent the R pattern and the G pattern from being deposited as a shadow effect in the region between the R pattern and the G pattern. can

Also, the atomic concentration of the outer portion SP of the deposition mask 100 may be different from the atomic concentration of the inner portion IP of the deposition mask 100 . In addition, the outer portion SP may include an oxide layer having an oxygen atom concentration of 5 at% or more, and the thickness of the oxide layer may be about 40 nm or more from the surface. The outer portion SP of the deposition mask 100 is a portion that has not undergone an etching process such as half etching, and may correspond to the above-described outer portion SP of the metal plate 10 . For example, the outer portion SP of the deposition mask 100 may mean an area in which an etching process is not performed among the deposition area DA and the non-deposition area NDA. In detail, the outer portion SP may be at least one of a non-deposition area NDA, an ineffective portion UA, and an island portion IS. In more detail, the outer portion SP in the deposition area DA may be a surface on which an ineffective portion UA and an island portion IS are formed on one surface of the deposition mask 100 on which surface etching is not performed. , may mean a surface on which the small face hole V1 is not formed among the other surfaces of the deposition mask 100 . That is, the deposition mask 100 according to the embodiment may include an oxide layer having an oxygen atom concentration of 5 at% or more, and the thickness of the oxide layer may be about 40 nm or more from the surface. Accordingly, in the process of manufacturing the deposition mask 100 , one surface and the other surface of the metal plate 10 can be prevented from being overetched, and the through-hole TH can be formed uniformly and precisely. Accordingly, the organic material can be uniformly deposited, thereby improving the deposition quality.

Hereinafter, the operation and effect of the present invention will be described in more detail through Examples and Comparative Examples.

Example

An invar metal plate having a thickness of about 30 μm including iron in an amount of about 63.5 wt% to about 64.5 wt% and nickel in an amount of about 35.5 wt% to about 36.5 wt% was prepared. One surface and the other surface of the metal plate were acid-treated, and the metal plate was surface-treated for about 300 seconds in an atmospheric atmosphere of about 280°C.

Atomic concentrations and components by depth were analyzed from the surface of the surface-treated metal plate using XPS equipment (manufactured by ULVAL-PHI). In the XPS measurement, the X-ray incidence angle is 90 degrees, the photoelectron incidence angle is 40 degrees, the energy source of the X-ray used is Monochromated Al-Kα (hv=1486.6 eV), and the X-ray output of 15 kV and 1.6 mA is 100 degrees of the sample metal plate. The μmФ area was measured.

comparative example

An invar metal plate having a thickness of about 30 μm including iron in an amount of about 63.5 wt% to about 64.5 wt% and nickel in an amount of about 35.5 wt% to about 36.5 wt% was prepared. One surface and the other surface of the metal plate were acid-treated, and the metal plate was surface-treated for about 720 seconds in an atmospheric atmosphere at about 180°C.

Atomic concentrations and components by depth were analyzed from the surface of the surface-treated metal plate using the same XPS equipment as in the Example (manufactured by ULVAL-PHI).

FIG. 2 is a diagram showing the surface atomic concentration of the metal plate 10 according to the embodiment, and FIG. 19 is a diagram showing the surface atomic concentration of the metal plate 10 according to the comparative example.

The difference in the surface atom concentration in the Example and the comparison is demonstrated with reference to FIG.2 and FIG.19. 2 and 19 , in the metal plate 10 according to the embodiment, the maximum value of the oxygen atom concentration in the depth region from the surface to about 50 nm or less may be about 65 at% or less. In detail, the maximum value of the oxygen atom concentration in the depth region from the surface to about 50 nm may be about 55 at% to about 65 at%. In detail, the maximum value of the oxygen atom concentration at a depth (first region) of about 5 nm to about 10 nm from the surface may be about 55 at% to about 65 at%. The maximum value of the oxygen atom concentration at a depth (second region) of about 10 nm to about 15 nm from the surface may be about 40 at% to about 65 at%. The maximum value of the oxygen atom concentration at a depth (third region) of about 15 nm to about 20 nm from the surface may be about 20 at% to about 50 at%. The maximum value of the oxygen atom concentration at a depth (fourth region) of about 20 nm to about 25 nm from the surface may be about 10 at% to about 30 at%. The maximum value of the oxygen atom concentration at a depth (fifth region) of about 25 nm to about 30 nm from the surface may be about 10 at% to about 20 at%. The maximum value of the oxygen atom concentration at a depth (sixth region) of about 30 nm to about 35 nm from the surface may be about 5 at% to about 15 at%. The maximum value of the oxygen atom concentration in a depth region of about 35 nm to 40 nm, a depth region of about 40 nm to about 45 nm, and a depth region of about 45 nm to about 50 nm (seventh region to ninth region) from the surface is about 10at % or less.

On the other hand, in the metal plate 10 according to the comparative example, the maximum value of the oxygen atom concentration in the depth region from the surface to about 50 nm may be about 55 at% or less. In detail, the maximum value of the oxygen atom concentration in the depth region from the surface to about 50 nm may be about 50 at% to about 55 at%.

In detail, the maximum value of the oxygen atom concentration at a depth (first region) of about 5 nm to about 10 nm from the surface may be about 40 at% to about 45 at%. The maximum value of the oxygen atom concentration at a depth (second region) of about 10 nm to about 15 nm from the surface may be about 15 at% to about 25 at%. The maximum value of the oxygen atom concentration at a depth (third region) of about 15 nm to about 20 nm from the surface may be about 10 at% to about 20 at%. The maximum value of the oxygen atom concentration at a depth (the fourth region) of about 20 nm to about 25 nm from the surface may be about 5 at% to about 15 at%. The maximum value of the oxygen atom concentration at a depth (fifth region) of about 25 nm to about 30 nm from the surface may be about 5 at% to about 10 at%. The maximum value of the oxygen atom concentration at a depth (sixth region) of about 30 nm to about 35 nm from the surface may be about 5 at% to about 10 at%. The maximum value of the oxygen atom concentration in a depth region of about 35 nm to 40 nm, a depth region of about 40 nm to about 45 nm, and a depth region of about 45 nm to about 50 nm (seventh region to ninth region) from the surface is about 5at % may be less.

That is, an oxide film having an oxygen concentration of about 5 at% or more may be formed on the surface of the metal plate 10 according to the embodiment, and the oxide film may have a thickness of about 40 nm or more from the surface of the metal plate 10 .

20 is a view showing a graph for comparing the surface iron (Fe) characteristics of metal plates according to Examples and Comparative Examples. In detail, FIG. 20 is data measured using XPS for the metal plate according to the embodiment and the metal plate 10 according to the comparative example, and is a diagram illustrating data measured at a depth corresponding to the third cycle described above. That is, FIG. 20 is a diagram illustrating characteristics of iron (Fe) contained in a depth from a depth of about 15 nm to a depth of about 20 nm from the surface of each of the metal plates of Examples and Comparative Examples. The signal intensity of FIG. 20 is not an absolute value, but a relative value for a specific binding energy range measured.

c/s (counter per second, XPS count rate) Binding Energy (eV) Example comparative example Fe metal 706.4 4657.5 8705 706.5 5060 9680 706.6 5085 10245 706.7 5020 10900 706.8 5087.5 11642.5 706.9 5237.5 11657.5 707 5615 11817.5 Fe ₂ O ₃ 710.5 13212.5 12917.5 710.6 13227.5 13032.5 710.7 13357.5 13362.5 710.8 12992.5 13202.5 710.9 13077.5 13192.5 711 12802.5 13282.5 711.1 12985 13182.5

Referring to Table 3 and FIG. 20, the metal plates according to Examples and Comparative Examples have a signal intensity value corresponding to the binding energy at a depth of about 15 nm to about 20 nm from the surface, for example, a peak intensity value (c/s, XPS count rate). can have

In detail, the metal plates according to Examples and Comparative Examples may have a peak intensity value for pure iron (Fe metal) in the first range, which is a binding energy range of about 706.4 eV to about 707 eV, and about 710.5 eV to about 711.1 eV. It may have a peak intensity value for iron oxide (Fe ₂ O ₃ ) in the second range, which is a binding energy range of eV.

In addition, as described above, the metal plates according to Examples and Comparative Examples may have a first peak intensity that is the maximum peak intensity value for pure iron (Fe metal) at a depth of about 15 nm to about 20 nm from the surface, It may have a second peak intensity, which is a maximum peak intensity value for iron oxide (Fe ₂ O ₃ ), respectively.

In the metal plate according to the embodiment, the first peak intensity with respect to the second peak intensity may be about 0.7 or less. For example, in Table 3, the first peak intensity is 5615 and the second peak intensity is 13357.5. Accordingly, the first peak intensity with respect to the second peak intensity may be about 0.42. However, in the metal plate according to the comparative example, the first peak intensity with respect to the second peak intensity may be greater than that of the embodiment. For example, in Table 3, the first peak intensity is 11817.5 and the second peak intensity is 13362.5. Accordingly, the first peak intensity with respect to the second peak intensity may be about 0.88. That is, it can be seen that the metal plate according to the comparative example has a significantly lower ratio of iron oxide contained in the outer region than the metal plate according to the embodiment.

In addition, FIG. 21 is a diagram illustrating a graph for comparing surface nickel (Fe) characteristics of metal plates according to Examples and Comparative Examples. In detail, FIG. 21 is data measured using XPS for the metal plate according to the embodiment and the metal plate 10 according to the comparative example, and is a diagram illustrating data measured at a depth corresponding to the third cycle described above. That is, FIG. 21 is a diagram illustrating characteristics of nickel (Fe) contained in a depth from a depth of about 15 nm to a depth of about 20 nm from the surface of each of the metal plates of Examples and Comparative Examples. The signal intensity of FIG. 21 is not an absolute value, but a relative value for a specific binding energy range measured.

c/s (counter per second, XPS count rate) Binding Energy (eV) Example comparative example Ni metal 852.3 13825 18682.5 852.4 13987.5 19567.5 852.5 13815 21260 852.6 14537.5 23087.5 852.7 14460 24432.5 852.8 15170 24440 852.9 15140 25035 Ni(OH) ₂ 855.9 14845 16135 856 14522.5 16117.5 856.1 14422.5 16285 856.2 14757.5 16352.5 856.3 14482.5 16317.5 856.4 14267.5 15760 856.5 14802.5 16007.5

Referring to Table 4 and FIG. 21, the metal plates according to Examples and Comparative Examples have a signal intensity value corresponding to the binding energy at a depth of about 15 nm to about 20 nm from the surface, for example, a peak intensity value (c/s, XPS counting rate). can have

In detail, the metal plates according to Examples and Comparative Examples may have a peak intensity value for pure nickel (Ni metal) in the third range, which is a binding energy range of about 852.3 eV to about 852.9 eV, and about 855.9 eV to about 856.5 eV. It may have a peak intensity value for nickel hydroxide (Ni(OH) ₂ ) in the fourth range, which is a binding energy range of eV.

In addition, as described above, the metal plates according to Examples and Comparative Examples may have a third peak intensity, which is the maximum peak intensity value for pure nickel (Ni metal), at a depth from a depth of about 15 nm to a depth of about 20 nm from the surface, Nickel hydroxide (Ni(OH) ₂ ) may have a fourth peak intensity that is a maximum peak intensity value, respectively.

In the metal plate according to the embodiment, the third peak intensity with respect to the fourth peak intensity may be about 1.3 or less. In detail, in an embodiment, the third peak intensity with respect to the fourth peak intensity may be about 1.1 or less. For example, in Table 4, the third peak intensity is 15170 and the fourth peak intensity is 14845. Accordingly, the third peak intensity with respect to the fourth peak intensity may be about 1.02. However, in the metal plate according to the comparative example, the third peak intensity with respect to the fourth peak intensity may be greater than the third peak intensity. For example, in Table 4, the third peak intensity is 25035 and the fourth peak intensity is 16352.5. Accordingly, the third peak intensity with respect to the fourth peak intensity may be about 1.53. That is, the metal plate according to the comparative example may have a significantly lower ratio of nickel hydroxide contained in the outer region than the metal plate according to the embodiment.

22 and 23 are diagrams showing micrographs of a faceted hole of a deposition mask according to Examples and Comparative Examples when viewed from a plane. In detail, FIGS. 22 and 23 are about forming a small face hole (V1) with a metal plate according to Examples and Comparative Examples and observing the surface thereof under a microscope.

As described above, the metal plate according to the embodiment may form an oxide film having an oxygen concentration of 5 at% or more on the surface, and the oxide film may have a thickness of about 40 nm or more. In addition, at a depth of about 20 nm or less from the surface of the metal plate, iron oxide (Fe ₂ O ₃ ) and pure iron (Fe metal) and nickel hydroxide (Ni(OH) ₂ ) and pure nickel (Ni metal) contained therein are may have a certain ratio. Accordingly, in the embodiment, as shown in FIG. 22 , the small face holes can be uniformly formed in the metal plate. On the other hand, in the comparative example, as shown in FIG. 23 , it can be seen that the shape of the carded hole formed by over-etching the surface of the metal plate may be non-uniform and connected to the adjacent carded hole.

That is, the embodiment may change the surface atomic concentration of the metal plate 10 and control the thickness of the oxide film formed. Accordingly, the thickness of the oxide film formed on the surface of the metal plate 10 can be controlled and the quality can be improved. Accordingly, it is possible to improve the adhesion between the metal plate 10 and the photoresist layer, for example, the photoresist layer for forming the face holes V1 and the face holes V2, thereby improving the etching factor, and the face holes V1 and V2. It is possible to prevent the metal plate 10 from being overetched in the etching process of forming the facing hole V2. Therefore, the through hole TH formed by the small face hole V1 and the large face hole V2 can be uniformly and precisely formed, and when the organic material is deposited using the deposition mask 100 according to the embodiment. Since the organic material can be uniformly deposited on the substrate, deposition defects can be minimized.

Features, structures, effects, etc. described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to one embodiment. Furthermore, features, structures, effects, etc. illustrated in each embodiment can be combined or modified for other embodiments by those of ordinary skill in the art to which the embodiments belong. Accordingly, the contents related to such combinations and modifications should be interpreted as being included in the scope of the present invention.

In addition, although the embodiments have been described above, these are merely examples and do not limit the present invention, and those of ordinary skill in the art to which the present invention pertains are exemplified above in a range that does not depart from the essential characteristics of the present embodiment. It can be seen that various modifications and applications that have not been made are possible. For example, each component specifically shown in the embodiments may be implemented by modification. And differences related to such modifications and applications should be construed as being included in the scope of the present invention defined in the appended claims.

Claims (21)

In the mask for deposition of iron (Fe)-nickel (Ni) alloy metal material for OLED pixel deposition,
The deposition mask is
a deposition region and a non-deposition region other than the deposition region;
The deposition region includes a plurality of effective portions and ineffective portions other than the effective portion,
The effective part is
a plurality of small face holes formed on one surface of the metal material;
a plurality of facing holes formed on the other surface opposite to one surface of the metal material;
a plurality of through-holes communicating the face-to-face hole and the face-to-face hole; and
It is formed on the other surface of the metal material and includes an island portion positioned between the through holes,
At least one of the non-deposition region, the ineffective portion, and the island portion,
In a depth region from the surface of the metal material to 15 nm,
The maximum value of the iron (Fe) atomic concentration is 40 at% or less,
The maximum value of the nickel (Ni) atomic concentration is 25 at% or less,
The maximum value of the oxygen (O) atomic concentration is 55at% to 65at% of the deposition mask. The method of claim 1,
When the surface is analyzed by X-ray elemental analysis (XPS),
In a depth region from 15 nm to 20 nm from the surface,
having a first peak intensity that is a maximum peak intensity value in a first range defined by a binding energy range of 706.4 eV to 707 eV;
having a second peak intensity that is a maximum peak intensity value in a second range defined by a binding energy range of 710.5 eV to 711.1 eV;
The first peak intensity with respect to the second peak intensity is 0.7 or less for a deposition mask. The method of claim 1,
As a result of analyzing the surface by X-ray elemental analysis,
In a depth region from 15 nm to 20 nm from the surface,
having a third peak intensity that is a maximum peak intensity value in a third range defined by a binding energy range of 852.3 eV to 852.9 eV;
having a fourth peak intensity that is a maximum peak intensity value in a fourth range defined by a binding energy range of 855.9 eV to 856.5 eV;
and the third peak intensity with respect to the fourth peak intensity is 1.3 or less. 4. The method of claim 3,
and the third peak intensity with respect to the fourth peak intensity is 1.1 or less. The method of claim 1,
The metal material includes an oxide film having a thickness of 40 nm or more from the surface of the metal material,
The oxide film is a deposition mask having an oxygen (O) atomic concentration of 5 at% or more. The method of claim 1,
In a depth region from 15 nm to 20 nm from the surface,
The maximum value of the oxygen atom concentration is 20at% or more of the deposition mask. The method of claim 1,
The through hole has a resolution of 400 PPI or more,
The metal material is a deposition mask having a thickness of 30 μm or less. The method of claim 1,
The deposition mask is a deposition mask for green organic material deposition. The method of claim 1,
The depth at which the oxygen atom has the maximum concentration is different from the depth at which the iron atom and the nickel atom have the maximum concentration. In the method of manufacturing a deposition mask for OLED pixel deposition,
preparing a metal plate;
In the depth region from the surface of the metal plate to 15 nm, the maximum value of the iron (Fe) atomic concentration is 40 at% or less, the maximum value of the nickel (Ni) atomic concentration is 25 at% or less, and the maximum value of the oxygen (O) atomic concentration is surface treatment to 55at% to 65at%;
disposing a first photoresist layer on one surface of the metal plate, and patterning the first photoresist layer;
forming a first groove on one surface of the metal plate through the patterned open portion of the first photoresist layer;
disposing a second photoresist layer on the other surface opposite to one surface of the metal plate, and patterning the second photoresist layer; and
and forming a second groove through the patterned open portion of the second photoresist layer, and forming a through hole communicating the first groove and the second groove. 11. The method of claim 10,
The surface treatment is a method of manufacturing a mask for deposition in which heat treatment is performed at a temperature of 250°C to 300°C. 11. The method of claim 10,
The surface treatment is a method of manufacturing a deposition mask in which heat treatment is performed for 250 seconds to 350 seconds. 11. The method of claim 10,
The surface treatment is a method of manufacturing a deposition mask that proceeds in an atmospheric atmosphere. 11. The method of claim 10,
The depth at which the oxygen atom has the maximum concentration is different from the depth at which the iron atom and the nickel atom have the maximum concentration. In the metal plate of an iron (Fe)-nickel (Ni) alloy used for manufacturing a deposition mask for OLED pixel deposition,
In a depth region up to 15 nm from the surface of the metal plate,
The maximum value of the iron (Fe) atomic concentration is 40 at% or less,
The maximum value of the nickel (Ni) atomic concentration is 25 at% or less,
The maximum value of oxygen (O) atomic concentration is 55at% to 65at%,
When the surface is analyzed by X-ray elemental analysis (XPS),
In a depth region from 15 nm to 20 nm from the surface,
having a first peak intensity that is a maximum peak intensity value in a first range defined by a binding energy range of 706.4 eV to 707 eV;
having a second peak intensity that is a maximum peak intensity value in a second range defined by a binding energy range of 710.5 eV to 711.1 eV;
The first peak intensity with respect to the second peak intensity is 0.7 or less. In the metal plate of an iron (Fe)-nickel (Ni) alloy used for manufacturing a deposition mask for OLED pixel deposition,
In a depth region up to 15 nm from the surface of the metal plate,
The maximum value of the iron (Fe) atomic concentration is 40 at% or less,
The maximum value of the nickel (Ni) atomic concentration is 25 at% or less,
The maximum value of oxygen (O) atomic concentration is 55at% to 65at%,
As a result of analyzing the surface by X-ray elemental analysis,
In a depth region from 15 nm to 20 nm from the surface,
having a third peak intensity that is a maximum peak intensity value in a third range defined by a binding energy range of 852.3 eV to 852.9 eV;
having a fourth peak intensity that is a maximum peak intensity value in a fourth range defined by a binding energy range of 855.9 eV to 856.5 eV;
The third peak intensity with respect to the fourth peak intensity is 1.3 or less. 17. The method of claim 16,
The third peak intensity with respect to the fourth peak intensity is 1.1 or less. 17. The method of claim 15 or 16,
The metal plate includes an oxide film having a thickness of 40 nm or more from the surface of the metal plate,
The oxide film is a metal plate having an oxygen (O) atom concentration of 5 at% or more. 17. The method of claim 15 or 16,
In a depth region from 15 nm to 20 nm from the surface,
The maximum value of the oxygen atom concentration is 20at% or more of the metal plate. 17. The method of claim 15 or 16,
The depth at which the oxygen atom has the maximum concentration is different from the depth at which the iron atom and the nickel atom have the maximum concentration. delete

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