KR20170110623A - METHOD FOR MANUFACTURING VARIATION MASK - Google Patents

Abstract

Provided is a method for manufacturing a deposition mask having a through hole having a complicated shape by using a plating process. A deposition mask manufacturing method includes a first film forming step of forming a first metal layer having a first opening formed in a predetermined pattern on a substrate having an insulating property and a second metal layer having a second opening communicating with the first opening, And a second film forming step of forming the film on the metal layer. The second film forming step includes a resist forming step of forming a resist pattern on the substrate and the first metal layer with a predetermined gap therebetween, a plating processing step of depositing a second metal layer on the first metal layer in the gap between the resist patterns . The resist forming step is performed so that the first opening of the first metal layer is covered with the resist pattern and the gap of the resist pattern is located on the first metal layer.

Description

METHOD FOR MANUFACTURING VARIATION MASK

The present invention relates to a method of manufacturing a deposition mask having a plurality of through holes by using a plating process. The present invention also relates to a deposition mask.

2. Description of the Related Art In recent years, a display device used in a portable device such as a smart phone or a tablet PC has been required to have high precision, for example, a pixel density of 400 ppi or higher. In addition, in the portable portable device, there is a growing demand for ultra-high vision. In this case, it is required that the pixel density of the display device is, for example, 800 ppi or higher.

The organic EL display device has been attracting attention because of its good responsiveness, low power consumption and high contrast. As a method of forming pixels of an organic EL display device, there is known a method of forming pixels in a desired pattern by using a deposition mask including through holes arranged in a desired pattern. Specifically, first, a deposition mask is brought into close contact with a substrate for an organic EL display device, and then a deposition mask and a substrate, which are in close contact with each other, are all put in a vapor deposition apparatus, and an organic material or the like is vapor deposited. In this case, in order to precisely fabricate an organic EL display device having a high pixel density, it is required to accurately reproduce the position and shape of the through-hole of the deposition mask according to design, or to reduce the thickness of the deposition mask.

As a manufacturing method of a deposition mask, for example, there is known a method of forming a through hole in a metal plate by etching using a photolithography technique, as disclosed in Patent Document 1. For example, first, a first resist pattern is formed on the first surface of the metal plate, and a second resist pattern is formed on the second surface of the metal plate. Then, a region of the first surface of the metal plate which is not covered with the first resist pattern is etched to form a first recessed portion on the first surface of the metal plate. Thereafter, a region of the second surface of the metal sheet that is not covered with the second resist pattern is etched to form a second recessed portion on the second surface of the metal sheet. At this time, through-holes penetrating the metal plate can be formed by performing etching so that the first concave portion and the second concave portion communicate with each other. The first surface of the metal plate refers to a surface constituting the first surface of the deposition mask opposite to the substrate for the organic EL display device (hereinafter also referred to as the organic EL substrate). The second surface of the metal plate refers to a surface constituting the second surface of a deposition mask located on the evaporation source side such as a crucible for holding an evaporation material.

Incidentally, in the etching process, the erosion of the metal plate proceeds not only in the normal direction of the metal plate, but also in the direction along the metal plate surface. That is, even in a portion of the metal plate covered with the resist pattern, erosion of the metal plate is at least partially caused. Therefore, in the method using etching, it is not possible to form a through hole in the metal plate according to the resist pattern, and it is therefore difficult to accurately reproduce the shape of the through hole of the deposition mask according to the design. In addition, when the through holes have a complicated shape such as a case where the dimensions of the through holes are different on the first surface side and the second surface side of the metal surface, the reproducibility of the through holes of the actually produced deposition mask is further lowered Throw away.

Further, in the case of manufacturing a deposition mask using etching, the degree of erosion of the metal plate in the direction along the metal plate surface changes in accordance with the length of time until the etching in the normal direction of the metal plate is completed . That is, the shape of the through hole varies depending on the thickness of the metal plate. Therefore, it is not easy to accurately reproduce both the thickness of the metal plate, that is, the thickness of the deposition mask, and the shape of the through hole.

As a method of manufacturing a deposition mask, there is known a method of manufacturing a deposition mask using a plating process, for example, as disclosed in Patent Document 2, in addition to the above-described method using etching. For example, in the method described in Patent Document 2, first, a model plate having conductivity is prepared. Then, a resist pattern is formed on the model plate with a predetermined gap therebetween. This resist pattern is provided at a position where a through hole of a deposition mask is to be formed. Thereafter, the plating liquid is supplied to the gap of the resist pattern, and the metal layer is deposited on the model plate by the electrolytic plating treatment. Thereafter, by separating the metal layer from the model plate, a deposition mask having a plurality of through holes can be obtained.

According to the method of manufacturing a deposition mask using a plating process, a through hole can be formed in a metal plate in accordance with a resist pattern. That is, the position and shape of the through hole of the deposition mask can be accurately reproduced according to the design. The thickness of the deposition mask can be set independently of the position and shape of the through-holes of the deposition mask by adjusting the time for continuing the plating process.

Japanese Patent No. 5382259 Japanese Patent Application Laid-Open No. 2001-234385

In order to suppress the occurrence of shadows in the deposition process or precisely control the area, shape and thickness of the evaporation material adhered to the organic EL substrate, the shape and dimensions of the through holes of the evaporation mask vary depending on the position It may be necessary. For example, in Patent Document 1 described above, there is disclosed an example in which the opening dimension of the through hole on the first surface side of the evaporation mask is smaller than the opening dimension of the through hole on the second surface side. However, according to the method described in Patent Document 2, it is impossible to fabricate a deposition mask in which through-holes having such complicated shapes are formed.

An object of the present invention is to provide a method of manufacturing a deposition mask having a through hole having a complicated shape by using a plating process.

According to the present invention, there is provided a method of manufacturing a deposition mask for manufacturing a deposition mask having a plurality of through holes, the method comprising: a first film formation step of forming a first metal layer having a first opening formed in a predetermined pattern on a substrate having an insulating property; A second film formation step of forming a second metal layer having a second opening communicating with the opening on the first metal layer; and a separation step of separating a combination of the first metal layer and the second metal layer from the substrate, Wherein the second film forming step includes a resist forming step of forming a resist pattern on the substrate and the first metal layer with a predetermined gap therebetween and a step of forming a second resist pattern on the first metal layer in the gap of the resist pattern, And a plating process step of depositing a metal layer, wherein the resist forming step is a step in which the first opening of the first metal layer is exposed to the resist pattern In conjunction with deopim by a method for manufacturing a deposition mask, which is performed is the gap in the resist pattern to be formed on the first metal layer.

In the method of manufacturing a deposition mask according to the present invention, a conductive pattern having a pattern corresponding to the first metal layer is formed on the substrate, and the first film formation step is a step of forming the first metal layer on the conductive pattern And a plating process for precipitating the plating solution.

In the method of manufacturing a deposition mask according to the present invention, the plating process of the first film forming process includes an electrolytic plating process of depositing the first metal layer on the conductive pattern by flowing an electric current through the conductive pattern .

In the first film forming step, the first metal layer may be formed at any portion of the portion overlapping the conductive pattern and the portion not overlapping the conductive pattern when viewed along the normal direction of the substrate, and in the separation step , The substrate and the first metal layer separated from the conductive pattern may be provided with concave portions having a shape corresponding to the conductive pattern.

In the method of manufacturing a deposition mask according to the present invention, the plating process of the second film formation process may include an electrolytic plating process for depositing the second metal layer on the first metal layer by flowing current through the first metal layer .

The present invention provides a deposition mask having a plurality of through holes extending from a first surface to a second surface, the deposition mask including a metal layer having the through-holes formed in a predetermined pattern, wherein a portion of the through- And the through hole is referred to as a first opening and a portion of the through hole located on the second surface is referred to as a second opening. In the case where the through hole is viewed from the deposition mask along the normal direction of the deposition mask, (2) The outline of the opening is configured to surround the outline of the first opening, and the first surface is provided with a recess.

In the deposition mask according to the present invention, the width of the portion of the first surface on which the concave portion is not formed may be in the range of 0.5 to 5.0 mu m.

In the deposition mask according to the present invention, the metal layer may include a first metal layer having the first opening and the recess formed thereon, and a second metal layer formed on the first metal layer and having the second opening formed thereon.

In the deposition mask according to the present invention, when the deposition mask is viewed along the normal direction of the deposition mask, the concave portion formed in the first metal layer is formed so as to have a contour of the connection portion to which the first metal layer and the second metal layer are connected As shown in FIG.

In the deposition mask according to the present invention, the metal layer may be a plating layer.

In the deposition mask and the method of manufacturing the same according to the present invention, the thickness of the portion of the first metal layer connected to the second metal layer may be 5 mu m or less.

In the deposition mask and the method of manufacturing the same according to the present invention, the thickness of the second metal layer is in the range of 3 to 50 탆, more preferably in the range of 3 to 30 탆, more preferably in the range of 3 to 25 탆 It may be within the range.

A method of manufacturing a deposition mask according to the present invention includes a first film formation step of forming a first metal layer having a first opening formed in a predetermined pattern on a substrate having an insulating property, And a second film forming step of forming a metal layer on the first metal layer. The second film forming step includes a resist forming step of forming a resist pattern on the substrate and the first metal layer with a predetermined gap therebetween, a plating processing step of depositing a second metal layer on the first metal layer in the gap between the resist patterns . Therefore, both the shape defined by the first opening of the first metal layer and the shape defined by the second opening of the second metal layer can be imparted to the through-hole of the deposition mask. Therefore, the through hole having a complicated shape can be precisely formed. Further, by forming the second metal layer using a plating process, the thickness of the deposition mask can be set arbitrarily independently of the shape of the through hole.

1 is a schematic plan view showing an example of a deposition mask apparatus including a deposition mask according to an embodiment of the present invention.
2 is a view for explaining a method of depositing using the deposition mask apparatus shown in Fig.
3 is a partial plan view showing the deposition mask shown in Fig.
4 is a cross-sectional view taken along the line IV-IV in Fig.
5 is an enlarged cross-sectional view showing a part of the first metal layer and the second metal layer of the deposition mask shown in Fig.
6 is a cross-sectional view showing a pattern substrate including a conductive pattern formed on a substrate.
7A is a cross-sectional view showing a first plating process for depositing a first metal layer on a conductive pattern.
Fig. 7B is a plan view showing the first metal layer of Fig. 7A. Fig.
8A is a cross-sectional view showing a resist forming step of forming a resist pattern on the pattern substrate and the first metal layer.
8B is a plan view showing the resist pattern of FIG. 8A.
Fig. 9 is a cross-sectional view showing a second plating treatment step of depositing a second metal layer on the first metal layer. Fig.
10 is a diagram showing a removing process for removing a resist pattern.
11A is a view showing a separation step of separating a combination of the first metal layer and the second metal layer from the pattern substrate.
11B is a plan view showing a case where the deposition mask of Fig. 11A is viewed from the second surface side.
12 is a cross-sectional view showing a first film forming step of forming a first metal layer on a substrate in a first modification of the embodiment of the present invention.
13 is a cross-sectional view showing a second plating treatment step for depositing a second metal layer on the first metal layer shown in Fig.
14 is a cross-sectional view showing a deposition mask according to the first modification of the embodiment of the present invention.
Fig. 15 is a cross-sectional view showing a resist forming step of forming a resist pattern on a pattern substrate and a first metal layer in a second modification of the embodiment of the present invention. Fig.
Fig. 16 is a cross-sectional view showing a second plating process for depositing a second metal layer on a first metal layer in a second modification of the embodiment of the present invention. Fig.
17 is a cross-sectional view showing a deposition mask according to a second modification of the embodiment of the present invention.
18 is a view showing a modification of the deposition mask apparatus including the deposition mask.
19 is a cross-sectional view showing a deposition mask in which a concave portion is specified.
20 is an enlarged cross-sectional view of the deposition mask shown in Fig.
21 is a plan view showing a case where the deposition mask is viewed from the first surface side.
22A is a view showing a position adjusting step of adjusting the position of the deposition mask in the plane direction of the organic EL substrate.
FIG. 22B is a view showing an adhesion process for closely adhering the deposition mask to the organic EL substrate. FIG.
22C is a diagram showing an example in which the concave surface of the concave portion of the deposition mask is in close contact with the organic EL substrate.
23 is a plan view showing a modification of the arrangement of a plurality of through holes in a deposition mask.
24A is a diagram for explaining a method of manufacturing a pattern substrate.
Fig. 24B is a view for explaining a method of manufacturing a pattern substrate. Fig.
24C is a diagram for explaining a method of manufacturing a pattern substrate.
24D is a diagram for explaining a method of manufacturing a pattern substrate.
25 is an enlarged cross-sectional view showing an example of the conductive pattern of the pattern substrate.
26 is an enlarged sectional view showing a deposition mask obtained when the first film formation step is performed using the pattern substrate shown in Fig.
27 is an enlarged cross-sectional view showing another example of the conductive pattern of the pattern substrate.
28 is an enlarged cross-sectional view showing a deposition mask obtained when the first film formation step is performed using the pattern substrate shown in Fig.

Hereinafter, one embodiment of the present invention will be described with reference to the drawings. In addition, in the drawings attached to the present specification, dimensions and aspect ratios are appropriately changed and exaggerated from the actual ones for the sake of ease of illustration and understanding.

1 to 28 are views for explaining an embodiment according to the present invention and a modification thereof. In the following embodiments and modifications thereof, a manufacturing method of a deposition mask used for patterning an organic material on a substrate in a desired pattern in manufacturing the organic EL display device will be described as an example. However, the present invention is not limited to such an application, but can be applied to a method of manufacturing a deposition mask used for various purposes.

Note that, in this specification, the terms "plate", "sheet" and "film" are not distinguished from each other only based on the difference in designation. For example, " plate " is a concept including a member that can be called a sheet or a film.

The term " plate surface (sheet surface, film surface) " refers to a plate-like (sheet-like or film-like) member as a whole and also to a plate- And the plane coincides with the plane direction. The " normal direction " used for the plate-like (sheet-like or film-like) member indicates the normal direction to the plate surface (sheet surface, film surface) of the member.

It should be noted that the terms "parallel", "orthogonal", "same", "equal", and the like, which specify the shape, geometric conditions, physical characteristics, , And the values of the physical characteristics, etc., are interpreted by including a range to which a similar function can be expected without being limited to the exact meaning.

(Deposition mask apparatus)

First, an example of a deposition mask apparatus including a deposition mask will be described with reference to Figs. 1 to 4. Fig. Here, FIG. 1 is a plan view showing an example of a deposition mask apparatus including a deposition mask, and FIG. 2 is a diagram for explaining a method of using the deposition mask apparatus shown in FIG. Fig. 3 is a plan view showing the deposition mask from the first surface side, and Fig. 4 is a sectional view along the line IV-IV in Fig.

The deposition mask apparatus 10 shown in Figs. 1 and 2 includes a plurality of deposition masks 20 having a substantially rectangular shape in plan view and a frame (not shown) provided at the peripheral edge portion of the plurality of deposition masks 20 15). In each of the deposition masks 20, a plurality of through holes 25 penetrating the deposition mask 20 are formed. 2, the deposition mask device 10 is supported in the deposition apparatus 90 such that the deposition mask 20 faces the lower surface of the substrate, for example, the organic EL substrate 92, And is used for the deposition of the evaporation material on the organic EL substrate 92. [

In the deposition apparatus 90, the deposition mask 20 and the organic EL substrate 92 come into close contact with each other by a magnetic force from a magnet (not shown). A crucible 94 for accommodating an evaporation material (e.g., an organic light emitting material) 98 and a heater 96 for heating the crucible 94 are provided in the deposition apparatus 90 below the deposition mask apparatus 10, . The evaporation material 98 in the crucible 94 is evaporated or sublimated by heating from the heater 96 and attached to the surface of the organic EL substrate 92. [ A plurality of through holes 25 are formed in the deposition mask 20 and the deposition material 98 is attached to the organic EL substrate 92 through the through holes 25. As described above, As a result, the evaporation material 98 is deposited on the surface of the organic EL substrate 92 in a desired pattern corresponding to the position of the through hole 25 of the deposition mask 20. 2, the surface of the deposition mask 20 facing the organic EL substrate 92 (hereinafter also referred to as the first surface) during the deposition process is indicated by 20a. The surface (hereinafter also referred to as a second surface) of the surface of the deposition mask 20 located on the evaporation source (crucible 94) side) of the evaporation material 98 is indicated by reference numeral 20b.

As described above, in the present embodiment, the through holes 25 are arranged in a predetermined pattern in each effective region 22. [ When the color display is desired, the deposition mask 20 (deposition mask apparatus 10) and the organic EL substrate 92 are relatively moved relative to each other along the arrangement direction of the through holes 25 (the above-described one direction) , An organic light emitting material for red, an organic light emitting material for green, and an organic light emitting material for blue may be deposited in this order. Alternatively, an evaporator on which the evaporation mask 20 corresponding to each color is mounted may be prepared, and the organic EL substrate 92 may be sequentially introduced into each evaporator.

The frame 15 of the deposition mask apparatus 10 is provided at the peripheral edge portion of the rectangular deposition mask 20. The frame 15 holds the deposition mask 20 so that the deposition mask 20 is not warped. The deposition mask 20 and the frame 15 are fixed to each other by, for example, spot welding.

However, the vapor deposition process may be carried out inside the vapor deposition apparatus 90 in a high-temperature atmosphere. In this case, during the deposition process, the deposition mask 20, the frame 15 and the organic EL substrate 92 held inside the deposition apparatus 90 are also heated. At this time, the deposition mask 20, the frame 15, and the organic EL substrate 92 exhibit the dimensional change behavior based on the respective thermal expansion coefficients. In this case, if the thermal expansion coefficients of the evaporation mask 20 or the frame 15 and the organic EL substrate 92 are greatly different from each other, positional deviation occurs due to a difference in dimensional change thereof. As a result, The dimension accuracy and the positional accuracy of the evaporation material adhered on the substrates 92 and 92 are lowered. In order to solve such a problem, it is preferable that the thermal expansion coefficient of the evaporation mask 20 and the frame 15 be equal to the thermal expansion coefficient of the organic EL substrate 92. [ For example, when a glass substrate is used as the organic EL substrate 92, an iron alloy containing nickel may be used as the main material of the deposition mask 20 and the frame 15. [ For example, an iron alloy such as super invar material including cobalt in addition to an invar material containing 34 to 38 mass% of nickel or 30 to 34 mass% of nickel, and an alloy containing 38 to 54 mass% A low thermal expansion Fe-Ni based plating alloy or the like can be used as a material for the first metal layer 32 and the second metal layer 37 which will be described later, which constitute the deposition mask 20. In the present specification, the numerical range expressed by the symbol " (-) " includes numerical values placed before and after the sign " ~ (~) ". For example, the numerical range defined by the expression "34 to 38 mass%" is the same as the numerical range defined by the expression "not less than 34 mass% and not more than 38 mass%".

When the temperatures of the deposition mask 20, the frame 15 and the organic EL substrate 92 do not reach a high temperature during the deposition processing, the thermal expansion coefficients of the deposition mask 20 and the frame 15 are changed to organic There is no particular need to set the value equal to the thermal expansion coefficient of the EL substrate 92. [ In this case, as the material of the first metal layer 32 and the second metal layer 37 which will be described later, which constitute the deposition mask 20, various materials other than the above-described iron alloy including nickel can be used. For example, an iron alloy containing chromium, nickel, a nickel-cobalt alloy, or the like can be used. As the iron alloy containing chromium, for example, an iron alloy called so-called stainless steel can be used.

(Deposition mask)

Next, the deposition mask 20 will be described in detail. As shown in Fig. 1, in the present embodiment, the deposition mask 20 has a roughly rectangular shape in plan view, more precisely, a roughly rectangular shape in plan view. The deposition mask 20 includes an effective region 22 in which a through hole 25 is formed in a regular arrangement and a peripheral region 23 surrounding the effective region 22. The peripheral region 23 is an area for supporting the effective region 22 and is not an area through which the evaporation material intended to be deposited on the substrate passes. For example, in the deposition mask 20 used for the deposition of the organic luminescent material for the organic EL display device, the effective region 22 is a region of the organic EL substrate 92 on which the organic luminescent material is deposited to form pixels Refers to a region in the deposition mask 20 facing a region serving as a display region. However, a through hole or a recess may be formed in the peripheral region 23 for various purposes. In the example shown in Fig. 1, each effective region 22 has a substantially rectangular shape in plan view, or more precisely, a substantially rectangular shape in plan view. Although not shown, each effective region 22 may have various contours according to the shape of the display region of the organic EL substrate 92. [ For example, each effective area 22 may have a circular contour.

In the illustrated example, the plurality of effective regions 22 of the deposition mask 20 are arranged in a line at predetermined intervals along one direction parallel to the longitudinal direction of the deposition mask 20. In the illustrated example, one effective area 22 corresponds to one organic EL display device. That is, according to the deposition mask apparatus 10 (deposition mask 20) shown in Fig. 1, multi-side deposition is possible.

3, a plurality of through holes 25 formed in each effective area 22 are formed in the effective area 22 along two directions orthogonal to each other, Arranged in a pitch. The shape of the through hole 25 and the like will be described in more detail with reference to FIGS. 3 and 4. FIG.

As shown in Figs. 3 and 4, the deposition mask 20 has a metal layer in which a plurality of through holes 25 are formed in a predetermined pattern. The metal layer has a first metal layer 32 formed with a first opening 30 in a predetermined pattern and a second metal layer 37 formed with a second opening 35 communicating with the first opening 30 . The second metal layer 37 is disposed closer to the second surface 20b of the deposition mask 20 than the first metal layer 32. [ 4, the first metal layer 32 constitutes the first surface 20a of the deposition mask 20 and the second metal layer 37 constitutes the second surface 20b of the deposition mask 20. In this case, ). In the present embodiment, the metal layer is a plating layer produced by the plating treatment process as described later. For example, the first metal layer 32 is a first plating layer produced by a first plating process, which will be described later, and the second metal layer 37 is a second plating layer formed by a second plating process, to be.

In this embodiment, the first opening 30 and the second opening 35 are communicated with each other, thereby forming the through hole 25 penetrating through the deposition mask 20. In this case, the opening dimension and the opening shape of the through hole 25 on the side of the first surface 20a of the deposition mask 20 are defined by the first opening 30 of the first metal layer 32. On the other hand, the opening dimension and the opening shape of the through hole 25 on the side of the second surface 20b of the deposition mask 20 are defined by the second opening 35 of the second metal layer 37. In other words, the through hole 25 is formed with a shape defined by the first opening 30 of the first metal layer 32 and a shape defined by the second opening 35 of the second metal layer 37 .

As shown in Fig. 3, the first opening 30 and the second opening 35 constituting the through hole 25 may have a substantially polygonal shape in plan view. Here, an example is shown in which the first opening 30 and the second opening 35 have a substantially rectangular shape, more specifically, a substantially square shape. Although not shown, the first opening 30 and the second opening 35 may have a substantially hexagonal shape, a substantially octagonal shape, or other substantially polygonal shape. The " approximately polygonal shape " is a concept including a shape in which the corner portion of the polygon is rounded. Although not shown, the first opening 30 and the second opening 35 may be circular. The shape of the first opening 30 and the shape of the second opening 35 need not be a top shape as long as the second opening 35 has an outline surrounding the first opening 30 in plan view none.

Although not shown, the first opening 30 and the second opening 35 constituting the through hole 25 may have a shape other than a polygonal shape in plan view, for example, a circular shape.

4, reference numeral 41 denotes a connecting portion to which the first metal layer 32 and the second metal layer 37 are connected. 4 shows an example in which the first metal layer 32 and the second metal layer 37 are in contact with each other. However, the present invention is not limited to this example, and the first metal layer 32 and the second metal layer 37 may be interposed between the first metal layer 32 and the second metal layer 37 Other layers may be interposed. For example, a catalyst layer for promoting the precipitation of the second metal layer 37 on the first metal layer 32 may be formed between the first metal layer 32 and the second metal layer 37.

Fig. 5 is an enlarged view showing a part of the first metal layer 32 and the second metal layer 37 in Fig. 5, the width M2 of the second metal layer 37 on the second surface 20b of the deposition mask 20 is smaller than the width M2 of the first surface 20a of the deposition mask 20 1 < / RTI > In other words, the opening dimension S2 of the through hole 25 (second opening portion 35) on the second surface 20b is equal to the opening dimension S2 of the through hole 25 (the first opening portion 30). Hereinafter, advantages of the first metal layer 32 and the second metal layer 37 will be described.

The evaporation material 98 coming from the side of the second surface 20b of the deposition mask 20 sequentially passes through the second opening 35 and the first opening 30 of the through hole 25, (92). The region of the organic EL substrate 92 to which the evaporation material 98 is adhered is mainly determined by the opening dimension S1 of the through hole 25 in the first surface 20a and the opening shape. 4, the evaporation material 98 is evaporated from the crucible 94 toward the organic EL substrate 92, as indicated by the arrow L1 directed from the second surface 20b side to the first surface 20a. The mask 20 may be moved not only along the normal direction N of the mask 20 but also in a direction that is largely inclined with respect to the normal direction N of the deposition mask 20. [ Assuming that the opening dimension S2 of the through hole 25 on the second surface 20b is equal to the opening dimension S1 of the through hole 25 on the first surface 20a, Most of the evaporation material 98 moving in a direction tilted largely with respect to the normal direction N of the through hole 25 is formed before the organic EL substrate 92 reaches the organic EL substrate 92 through the through hole 25, Reaches the wall surface (36) of the wall (35) and is attached. Therefore, in order to increase the utilization efficiency of the evaporation material 98, it can be said that it is preferable to increase the opening dimension S2 of the second opening 35, that is, to make the width M2 of the second metal layer 37 small.

4, the minimum angle formed by the straight line L1 passing through the end portion 38 of the second metal layer 37 and the end portion 33 of the first metal layer 32 with respect to the normal direction N of the deposition mask 20 is , And the symbol &thetas; 1. It is advantageous to increase the angle? 1 in order to reach the organic EL substrate 92 as much as possible without reaching the wall surface 36 of the second opening 35 with the evaporation material 98 moving obliquely. In terms of increasing the angle [theta] 1, it is effective to make the width M2 of the second metal layer 37 smaller than the width M1 of the first metal layer 32. [ As is clear from the drawing, it is also effective to reduce the thickness T1 of the first metal layer 32 and the thickness T2 of the second metal layer 37 in terms of increasing the angle? 1. Here, the "thickness T1 of the first metal layer 32" means the thickness of the first metal layer 32 connected to the second metal layer 37. If the width M2 of the second metal layer 37, the thickness T1 of the first metal layer 32, and the thickness T2 of the second metal layer 37 are excessively reduced, the strength of the deposition mask 20 is lowered, Therefore, it is considered that the deposition mask 20 is damaged during transportation or use. For example, it is considered that the deposition mask 20 is damaged by the tensile stress applied to the deposition mask 20 when the deposition mask 20 is applied to the frame 15. [ Considering these points, it can be said that the dimensions of the first metal layer 32 and the second metal layer 37 are preferably set in the following ranges. Thus, the above-mentioned angle? 1 can be made 45 degrees or more, for example.

The width M1 of the first metal layer 32: 5 to 25 mu m

The width of the second metal layer 37 M2: 2 to 20 占 퐉

The thickness T0 of the deposition mask 20: 5 to 50 占 퐉

Thickness T1 of the first metal layer 32: 5 mu m or less

The thickness T2 of the second metal layer 37 is preferably 2 to 50 占 퐉, more preferably 3 to 50 占 퐉, still more preferably 3 to 30 占 퐉, still more preferably 3 to 25 占 퐉

Table 1 shows examples of the values of the dimensions of the first metal layer 32 and the second metal layer 37 obtained in accordance with the number of display pixels and the number of display pixels in the 5-inch organic EL display device. "FHD" means Full High Definition, "WQHD" means Wide Quad High Definition, and "UHD" means Ultra High Definition.

Next, the shape of the first metal layer 32 will be described in more detail. 5, when the first metal layer 32 at the end portion 33 has a shape rising significantly toward the second surface 20b side, the thickness of the through hole 25 It is considered that most of the evaporation material 98 after passing through the second opening 35 reaches and adheres to the wall surface 31 of the first metal layer 32. 5, the first metal layer 32 is formed so as to cover the end portion 33 in order to suppress adhesion of the evaporation material 98 to the first metal layer 32 in the vicinity of the end portion 33, It is preferable that the first metal layer 32 has a thickness smaller than the thickness T1 at a portion connected to the second metal layer 37. [ 5, the thickness of the first metal layer 32 monotonously decreases from the portion of the first metal layer 32 connected to the second metal layer 37 toward the end portion 33 . The shape of the first metal layer 32 can be realized by forming the first metal layer 32 by a plating process as described later.

5 designates the angle formed by the tangential plane L2 of the first metal layer 32 with respect to the wall surface 31 and the normal direction N of the deposition mask 20 at the end portion 33. In Fig. From the viewpoint of suppressing the deposition material 98 after passing through the second opening 35 of the through hole 25 from adhering to the wall surface 31 of the first metal layer 32, It is also valid. Preferably, the angle &thetas; 2 is at least 30 DEG, more preferably at least 45 DEG. This angle? 2 can also be realized by forming the first metal layer 32 by a plating process. The term " wall surface 31 " refers to a surface defining the first opening 30 in the surface of the first metal layer 32. The above-mentioned "wall surface 36" similarly refers to a surface on which the second opening 35 is defined in the surface of the second metal layer 37.

(Manufacturing Method of Deposition Mask)

Next, a method of manufacturing the deposition mask 20 including the above configuration will be described with reference to FIGS. 6 to 11B.

(First film forming step)

First, a first film formation process for forming a first metal layer 32 having a first opening 30 formed in a predetermined pattern on a substrate 51 having an insulating property will be described. First, as shown in Fig. 6, a pattern substrate 50 having a substrate 51 having an insulating property and a conductive pattern 52 formed on the substrate 51 is prepared. The conductive pattern (52) has a pattern corresponding to the first metal layer (32). The thickness of the material constituting the substrate 51 and the thickness of the substrate 51 are not particularly limited as long as they have insulating properties and appropriate strength. For example, glass, a synthetic resin, or the like can be used as a material for constituting the substrate 51.

As the material constituting the conductive pattern 52, a conductive material such as a metal material or an oxide conductive material is suitably used. Examples of the metal material include, for example, chromium and copper. Preferably, a material having high adhesiveness to the resist pattern 54, which will be described later, is used as a material for constituting the conductive pattern 52. For example, when the resist pattern 54 is formed by patterning a so-called dry film, such as a resist film containing an acrylic photocurable resin, as the material constituting the conductive pattern 52, It is preferable that copper having adhesion is used.

A first metal layer 32 is formed on the conductive pattern 52 so as to cover the conductive pattern 52 and the first metal layer 32 is separated from the conductive pattern 52 in a subsequent step . Therefore, on the surface of the first metal layer 32 on the side in contact with the conductive pattern 52, a recess corresponding to the thickness of the conductive pattern 52 is usually formed. Considering this point, it is preferable that the thickness of the conductive pattern 52 is small as long as the conductive pattern 52 has the conductivity required for the electrolytic plating treatment. For example, the thickness of the conductive pattern 52 is within a range of 50 to 500 nm.

Subsequently, a first plating process is performed to deposit the first metal layer 32 on the conductive pattern 52 by supplying a first plating liquid onto the substrate 51 on which the conductive pattern 52 is formed. For example, the substrate 51 on which the conductive pattern 52 is formed is immersed in a plating bath filled with the first plating solution. Thus, as shown in Fig. 7A, the first metal layer 32 having the first opening 30 formed in the predetermined pattern on the pattern substrate 50 can be obtained. 7B is a plan view showing the first metal layer 32 formed on the substrate 51. FIG.

7A, the first metal layer 32 is formed not only at a portion overlapping the conductive pattern 52 when seen along the normal direction of the substrate 51, but also at a portion overlapping the conductive pattern 52 In a portion that does not overlap with the first electrode. This is because the first metal layer 32 is further deposited on the surface of the first metal layer 32 deposited on the portion overlapping with the end portion 53 of the conductive pattern 52. As a result, as shown in Fig. 7A, the end portion 33 of the first metal layer 32 can be located at a portion that does not overlap the conductive pattern 52 when viewed along the normal direction of the substrate 51 have. On the other hand, the thickness of the first metal layer 32 at the end portion 33 becomes smaller as compared with the thickness at the center portion, as the deposition of the metal progresses in the direction of the surface of the substrate 51, not in the thickness direction. The thickness of the first metal layer 32 is at least partially monotonously decreased from the central portion of the first metal layer 32 toward the end portion 33, for example, as shown in Fig. 7A. As a result, the above-mentioned angle? 2 also becomes a value larger than 0 °.

7A, the width of a portion of the first metal layer 32 that does not overlap with the conductive pattern 52 is indicated by the symbol w. The width w is, for example, in the range of 0.5 to 5.0 mu m. The dimension of the conductive pattern 52 is set in consideration of the width w.

As long as the first metal layer 32 can be deposited on the conductive pattern 52, the specific method of the first plating treatment step is not particularly limited. For example, the first plating process may be performed as a so-called electrolytic plating process in which the first metal layer 32 is deposited on the conductive pattern 52 by flowing electric current through the conductive pattern 52. Alternatively, the first plating process may be an electroless plating process. When the first plating process is an electroless plating process, an appropriate catalyst layer is formed on the conductive pattern 52. Even when the electrolytic plating process is performed, the catalyst layer may be formed on the conductive pattern 52.

The components of the first plating liquid to be used are appropriately determined in accordance with the characteristics required for the first metal layer 32. For example, when the first metal layer 32 is made of an iron alloy containing nickel, a mixed solution of a solution containing a nickel compound and a solution containing an iron compound may be used as the first plating solution. For example, a mixed solution of a solution containing nickel sulfamate and a solution containing sulfamic acid iron can be used. Additives such as malonic acid and saccharin may be contained in the plating solution.

(Second film forming step)

Next, a second film formation process is performed in which a second metal layer 37 having a second opening 35 communicating with the first opening 30 is formed on the first metal layer 32. First, a resist forming step of forming a resist pattern 55 by placing a predetermined gap 56 on the substrate 51 of the pattern substrate 50 and on the first metal layer 32 is performed. 8A and 8B are a cross-sectional view and a plan view showing the resist pattern 55 formed on the substrate 51. Fig. 8A and 8B, in the resist forming step, the first opening 30 of the first metal layer 32 is covered with the resist pattern 55 and the gap 56 of the resist pattern 55 Is located on the first metal layer 32. [

Hereinafter, an example of a resist forming process will be described. First, a dry film is pasted on the substrate 51 of the pattern substrate 50 and the first metal layer 32 to form a negative type resist film. Examples of the dry film include those containing an acrylic photocurable resin such as RY3310 by Hitachi Chemical Co., Ltd. Next, an exposure mask is provided so that light is not transmitted through an area to be a gap 56 in the resist film, and an exposure mask is disposed on the resist film. Thereafter, the exposure mask is sufficiently adhered to the resist film by vacuum contact. As the resist film, a positive resist film may be used. In this case, as the exposure mask, an exposure mask is used which allows light to pass through the resist film to be removed.

Thereafter, the resist film is exposed through an exposure mask. Further, the resist film is developed to form an image on the exposed resist film. 8A and 8B, the gap 56 located on the first metal layer 32 is formed and the first opening portion 30 of the first metal layer 32 is covered with the gap 56, The pattern 55 can be formed. A heat treatment step of heating the resist pattern 55 after the development step may be carried out in order to firmly adhere the resist pattern 55 to the substrate 51 and the first metal layer 32 more strongly.

Subsequently, a second plating solution is supplied to the gaps 56 of the resist pattern 55 to deposit a second metal layer 37 on the first metal layer 32. For example, the substrate 51 on which the first metal layer 32 is formed is immersed in a plating bath filled with the second plating solution. Thus, as shown in Fig. 9, the second metal layer 37 can be formed on the first metal layer 32. As shown in Fig.

As long as the second metal layer 37 can be deposited on the first metal layer 32, the specific method of the second plating treatment step is not particularly limited. For example, the second plating process may be performed as a so-called electrolytic plating process in which a second metal layer 37 is deposited on the first metal layer 32 by passing an electric current through the first metal layer 32. Alternatively, the second plating process may be an electroless plating process. When the second plating process is an electroless plating process, an appropriate catalyst layer is formed on the first metal layer 32. Even when the electrolytic plating process is performed, the catalyst layer may be formed on the first metal layer 32. [

As the second plating solution, the same plating solution as the first plating solution described above may be used. Alternatively, a plating solution different from the first plating solution may be used as the second plating solution. When the composition of the first plating solution and the composition of the second plating solution are the same, the composition of the metal constituting the first metal layer 32 and the composition of the metal constituting the second metal layer 37 are also the same.

9, the second plating process is continued until the upper surface of the resist pattern 55 and the upper surface of the second metal layer 37 are aligned with each other. However, the present invention is not limited to this. The second plating process may be stopped in a state in which the upper surface of the second metal layer 37 is located below the upper surface of the resist pattern 55. [

(Removal process)

Thereafter, as shown in Fig. 10, a removing step for removing the resist pattern 55 is performed. The resist pattern 55 can be peeled from the substrate 51, the first metal layer 32, or the second metal layer 37 by using, for example, an alkaline removing solution.

(Separation step)

Next, a separation step for separating the combination of the first metal layer 32 and the second metal layer 37 from the substrate 51 of the pattern substrate 50 is performed. 11A, a first metal layer 32 in which a first opening 30 is formed in a predetermined pattern and a second opening 35 in which a second opening 35 communicating with the first opening 30 are formed are formed, A deposition mask 20 having a metal layer 37 can be obtained. 11B is a plan view showing a case where the deposition mask 20 is viewed from the second surface 20b side.

Hereinafter, one example of the separation process will be described in detail. First, a film in which a substance having adhesiveness is formed by application or the like is affixed to a combination of the first metal layer 32 and the second metal layer 37 formed on the substrate 51. The film is then removed from the substrate 51 so that the combination of the first metal layer 32 and the second metal layer 37 is removed from the substrate 51 of the pattern substrate 50 . Thereafter, the film is peeled off from the combination of the first metal layer 32 and the second metal layer 37.

In addition, in the separation step, first, a gap serving as an instrument of separation is formed between the combination of the first metal layer 32 and the second metal layer 37 and the substrate 51, Thereby promoting the separation process.

As the substance having adhesive property, a substance which loses adhesiveness by being irradiated with light such as UV or heated may be used. In this case, after the combination of the first metal layer 32 and the second metal layer 37 is separated from the substrate 51, a step of irradiating the film with light or a step of heating the film is performed. Thereby, the step of peeling the film from the combination of the first metal layer 32 and the second metal layer 37 can be facilitated. For example, the film can be peeled off while keeping the combination of the film and the first metal layer 32 and the second metal layer 37 as parallel as possible. This prevents the combination of the first metal layer 32 and the second metal layer 37 from being bent when the film is peeled off, thereby suppressing the occurrence of deformation tendencies such as curvature in the deposition mask 20 can do.

The second plating liquid is supplied to the gap 56 of the resist pattern 55 and the second metal layer 37 is deposited on the first metal layer 32 to form the deposition mask 20 ). The shape defined by the first opening 30 of the first metal layer 32 and the shape defined by the second opening 35 of the second metal layer 37 are formed in the through hole 25 of the deposition mask 20, Can be imparted to both sides. Therefore, the through hole 25 having a complicated shape can be formed precisely. For example, it is possible to obtain the through hole 25 in which the above-mentioned angle? 1 can be made large. As a result, the utilization efficiency of the evaporation material 98 can be increased. The thickness T0 of the deposition mask 20 can be arbitrarily set independently of the shape of the through hole 25 by forming the second metal layer 37 using a plating process. Therefore, the vapor deposition mask 20 can have sufficient strength. Therefore, it is possible to provide a highly reliable organic EL display device and a deposition mask 20 excellent in durability.

It is also possible to make various modifications to the above-described embodiments. Hereinafter, modifications will be described with reference to drawings as necessary. In the drawings used in the following description and the following description, the same reference numerals as those used for the corresponding parts in the above-described embodiments are used for the parts that can be configured similarly to the above- Duplicate descriptions are omitted. Further, in the case where it is clear that the effect obtained in the above-described embodiment is also obtained in the modification, the description thereof may be omitted.

(First Modification)

In the above-described embodiment, the first film forming step is shown as an example including a first plating treatment step of depositing the first metal layer 32 on the conductive pattern 52 of the pattern substrate 50. That is, an example in which the first metal layer 32 is formed by plating is shown. However, the present invention is not limited to this, and the first metal layer 32 may be formed by other methods.

For example, first, a substrate 51 having an insulating property is prepared, and then a first metal layer 32 is formed over the entire surface of the substrate 51. As a method for forming the first metal layer 32 on the substrate 51, a physical film forming method such as sputtering, a chemical film forming method, and the like can be suitably used. Thereafter, a resist pattern is formed on a portion of the first metal layer 32 other than the portion where the first opening 30 is to be formed, and then the first metal layer 32 is etched. By patterning the first metal layer 32 as described above, the first metal layer 32 having the first openings 30 formed in a predetermined pattern can be formed on the substrate 51, as shown in Fig. In this case, the above-described conductive pattern 52 need not be formed on the substrate 51. [

13, the second metal layer 37 having the second openings 35 communicating with the first openings 30 is formed by performing the above-described resist forming process and the second plating process, Can be formed on the first metal layer 32. 14, a first metal layer 32 having a first opening 30 formed in a predetermined pattern and a second metal layer 32 having a predetermined pattern are formed on the first metal layer 32, The deposition mask 20 having the second metal layer 37 having the second openings 35 can be obtained.

(Second Modification)

15, the resist pattern 55 provided on the substrate 51 and the first metal layer 32 is formed in such a manner that the width of the resist pattern 55 becomes wider as the distance from the substrate 51 increases , So-called reverse taper shape. In other words, the distance between the side surfaces 57 of the resist pattern 55 forming the gap 56 may become narrower as the distance from the substrate 51 is increased. 16 is a sectional view showing a case where a second plating solution is supplied to the gaps 56 of the resist pattern 55 and the second metal layer 37 is deposited on the first metal layer 32. FIG. 17 is a cross-sectional view showing a deposition mask 20 obtained by carrying out the removal step and the separation step described above. 17, the second metal layer 37 of the vapor deposition mask 20 according to the present modification has a tapered shape as viewed from the first surface 20a side toward the second surface 20b side Shape. Therefore, the angle? 1 can be efficiently increased while securing the thickness of the second metal layer 37 and the volume of the second metal layer 37 sufficiently. For example, the opening dimension S1 of the through hole 25 on the first surface 20a and the opening dimension S2 of the through hole 25 on the second surface 20b are the same as the opening dimension S2 of the above- The dimension S0 of the through hole 25 in the connecting portion 41 between the first metal layer 32 and the second metal layer 37 can be made smaller than that in the case of the present embodiment described above .

(Other Modifications)

In the above-described embodiment, an example in which a plurality of effective regions 22 are allocated in the longitudinal direction of the deposition mask 20 is shown. Further, in the deposition process, an example in which a plurality of deposition masks 20 are provided in the frame 15 is shown. However, the present invention is not limited to this. As shown in Fig. 18, a deposition mask 20 having a plurality of effective regions 22 arranged in a lattice form along both the width direction and the longitudinal direction may be used.

(Relative to the concave portion on the first surface of the deposition mask)

The patterned substrate 50 for carrying out the first film forming step for forming the first metal layer 32 has the substrate 51 provided with the conductive pattern 52 having the predetermined thickness ) Is used. The first metal layer 32 is formed not only at the portion overlapping the conductive pattern 52 when viewed along the normal direction of the substrate 51 but also at the portion not overlapping the conductive pattern 52. [ Therefore, when the deposition mask 20 including the first metal layer 32 and the second metal layer 37 is separated from the substrate 51 and the conductive pattern 52 of the pattern substrate 50, 19 and 20, a concave portion 34 having a shape corresponding to the conductive pattern 52 is formed on the first surface 20a of the deposition mask 20 constituted by the conductive patterns 52 and 32 . 19 is a sectional view showing the deposition mask 20 in which the concave portion 34 is specified. 20 is an enlarged cross-sectional view of the deposition mask 20 shown in Fig.

In the following description, a portion of the first surface 20a of the deposition mask 20 where the recess 34 is not formed is referred to as the outermost surface 20c and a portion where the recess 34 is formed is referred to as It is called concave surface 20d. The boundary between the outermost surface 20c and the concave surface 20d of the concave portion 34 is referred to as an outer edge 34e of the concave portion 34. [ The outermost surface 20c is the surface of the first metal layer 32 deposited in a portion of the first metal layer 32 deposited in the first film forming step that does not overlap with the conductive pattern 52. [ The distance between the top surface 20c and the second surface 20b is larger than the distance between the concave surface 20d and the second surface 20b in the normal direction of the deposition mask 20. [

The depth D of the concave portion 34 is determined according to the thickness of the conductive pattern 52 of the pattern substrate 50. For example, when the thickness of the conductive pattern 52 is within the range of 50 to 500 nm, the depth D of the concave portion 34 is within the range of 50 to 500 nm. The thickness T1 of the first metal layer 32 is in the range of 0.5 to 5.0 mu m as in the case of the above-described embodiment.

21 is a plan view showing a case where the deposition mask 20 is viewed from the first surface 20a side along the normal direction of the deposition mask 20. Fig. In Fig. 21, the outermost surface 20c and the concave surface 20d of the first surface 20a of the deposition mask 20 are given different hatching. 21, the end portion 38 of the second metal layer 37 formed on the second surface 20b side of the deposition mask 20 and the end portion 38 of the first metal layer 32 and the second metal layer 37 The connecting portion 41 to be connected is indicated by a dotted line. The position of the connection portion 41 in the plan view is the same as the position of the end portion 38 of the second metal layer 37 when the wall surface 36 of the second metal layer 37 is widened in parallel with the normal direction of the deposition mask 20. [ Position.

21, the outermost edge 34e of the outermost surface 20c and the concave portion 34 extends along the end portion 33 of the first metal layer 32, As shown in FIG. The width w of the outermost surface 20c in the direction orthogonal to the contour of the through hole 25 is set to be equal to the width w of the portion of the first metal layer 32 which does not overlap the conductive pattern 52 For example, in the range of 0.5 to 5.0 mu m.

21, when the deposition mask 20 is viewed along the normal direction of the deposition mask 20, the outer edge 34e of the recess 34 is formed in the first metal layer 32, And the connection portion 41 to which the second metal layer 37 is connected. In other words, the second metal layer 37 is laminated on the portion of the first metal layer 32 where the concave portion 34 is formed. Advantages of such a configuration will be described later. The distance d between the outer edge 34e of the recess 34 and the contour of the connection portion 41 in the plane direction of the deposition mask 20 is in the range of 1.0 to 16.5 mu m, for example.

Hereinafter, an example of the advantage that the depression 34 is formed on the first surface 20a of the deposition mask 20 will be described. 22A is a diagram showing a position adjusting step of adjusting the position of the deposition mask 20 in the plane direction of the organic EL substrate 92. Fig. 22B is a view showing an adhesion process for closely adhering the deposition mask 20 to the organic EL substrate 92. Fig.

In order to suppress the occurrence of scratches on the surface of the organic EL substrate 92 due to the contact of the deposition mask 20 with the organic EL substrate 92, The deposition mask 20 is moved along the surface direction of the organic EL substrate 92 with a predetermined gap between the first surface 20a of the deposition mask 20 and the position of the deposition mask 20 is adjusted.

In this case, as the distance between the organic EL substrate 92 and the first surface 20a of the deposition mask 20 is smaller, the relative position of the deposition mask 20 relative to the organic EL substrate 92 is detected with high accuracy Therefore, the position of the deposition mask 20 can be precisely adjusted. On the other hand, as the distance between the organic EL substrate 92 and the first surface 20a of the deposition mask 20 is smaller, errors in adjusting the position of the deposition mask 20 and warping of the deposition mask 20 The possibility that the deposition mask 20 is in contact with the organic EL substrate 92 is increased.

According to the present embodiment, the concave portion 34 is formed on the first surface 20a of the deposition mask 20. The concave surface 20d of the concave portion 34 is located farther from the organic EL substrate 92 than the outermost surface 20c. The possibility that the concave surface 20d contacts the organic EL substrate 92 is lower than the possibility that the top surface 20c contacts the organic EL substrate 92. [ Therefore, by forming the concave portion 34 on the first surface 20a of the deposition mask 20, even when errors in position adjustment of the deposition mask 20 and warping of the deposition mask 20 occur, The area of the deposition mask 20 contacting the substrate 92 can be reduced. As a result, scratches on the surface of the organic EL substrate 92 can be suppressed. For example, it is possible to suppress the occurrence of scratches on wirings and electrodes previously formed on the organic EL substrate 92. [

After the position adjustment process, as shown in Fig. 22B, an adhesion process is performed in which the deposition mask 20 is brought into close contact with the organic EL substrate 92. The deposition mask 20 is moved toward the organic EL substrate 92 by using the magnetic force from a magnet (not shown), and the first surface 20a of the deposition mask 20 and the organic EL substrate 92, . Thereafter, a deposition process for depositing an organic material or the like on the organic EL substrate 92 is performed.

If the gap is empty between the end 33 of the first metal layer 32 of the deposition mask 20 and the organic EL substrate 92 during the deposition process, the deposition material enters the gap, and the organic EL substrate 92 The shape of the evaporation material adhering to the evaporation source is changed. Therefore, in order to precisely control the shape of the deposition material adhered to the organic EL substrate 92, the end portion 33 of the first metal layer 32 of the deposition mask 20 is reliably contacted with the organic EL substrate 92 . The gap is liable to occur when the thickness of the deposition mask 20 is small, and therefore, a warp, a wavy shape, or the like appears in the deposition mask 20.

According to the present embodiment, since the concave portion 34 is formed on the first surface 20a of the deposition mask 20, when the deposition mask 20 is approached to the organic EL substrate 92 during the adhesion process , The outermost surface 20c of the deposition mask 20 is more likely to contact the organic EL substrate 92 than the concave surface 20d. The end portion 33 (the outer edge of the deposition mask 20 on the first surface 20a) of the first metal layer 32 of the deposition mask 20 is located on the uppermost surface 20c. Therefore, the end portion 33 of the first metal layer 32 of the deposition mask 20 can be brought into contact with the organic EL substrate 92 more reliably.

The portion of the first metal layer 32 that does not overlap with the second metal layer 37 when viewed along the normal direction of the deposition mask 20 is a portion overlapping the second metal layer 37 of the first metal layer 32 It is more likely to be deformed. When the concave portion 34 is formed in the first metal layer 32 of the deposition mask 20, the thickness of the first metal layer 32 becomes smaller by the depth D of the concave portion 34, The first metal layer 32 is more likely to be deformed. Therefore, when a force such as a magnetic force from the magnet acts on the deposition mask 20, the concave portion 34 of the first metal layer 32 is formed and the second metal layer 37 is formed as shown in Fig. It is considered that a portion of the concave surface 20d of the concave portion 34 is in contact with the organic EL substrate 92. [ A part of the concave surface 20d of the concave portion 34 contacts the organic EL substrate 92 in addition to the outermost surface 20c of the deposition mask 20, (92).

It is preferable that the outermost surface 20c of the deposition mask 20 contacts the organic EL substrate 92 and then the concave surface of the concave portion 34 of the deposition mask 20 The deposition mask 20 is brought close to the organic EL substrate 92 so that the mask 20d comes into contact with the organic EL substrate 92. [ As a result, the end portion 33 of the outermost surface 20c of the deposition mask 20 is surely brought into contact with the organic EL substrate 92 and the deposition mask 20 is tightly contacted with the organic EL substrate 92 .

19 to 22C, the deposition mask 20 includes a first metal layer 32 in which the first opening 30 is formed and a second metal layer 37 in which the second opening 35 is formed ). Therefore, as in the case of the above-described embodiment, the shape of the through hole 25 that the opening dimension S2 on the second surface 20b is larger than the opening dimension S1 on the first surface 20a can be easily . This makes it possible to inhibit adhesion of the evaporation material 98 moving in the direction oblique to the normal direction N of the deposition mask 20 to the wall surface of the through hole 25. [ Thus, for example, generation of shadows can be suppressed.

The effect of reducing the area of the deposition mask 20 that contacts the organic EL substrate 92 by forming the recesses 34 in the first surface 20a of the deposition mask 20 is achieved by using the deposition mask 20 without regard to the layer structure. For example, although not shown, the deposition mask 20 is formed of only one metal layer (plating layer), and the recesses 34 are formed in the surface of the metal layer, which constitutes the first surface 20a of the deposition mask 20, .

(Modification of Arrangement of Through Hole)

In the above-described embodiment, there is shown an example in which a plurality of through holes 25 are arranged in a lattice form when the deposition mask 20 is viewed along the normal direction of the deposition mask 20. However, the arrangement of the through holes 25 is not particularly limited. 23, when the deposition mask 20 is viewed along the normal direction of the deposition mask 20, the plurality of through holes 25 may be arranged in a staggered manner.

(Example of the shape of the concave portion)

The concave portion 34 of the first surface 20a of the deposition mask 20 is formed corresponding to the conductive pattern 52 of the pattern substrate 50 as described above. Therefore, the shape of the concave portion 34 is determined based on the shape of the conductive pattern 52. Hereinafter, some examples of the shape of the concave portion 34 will be described.

First, an example of a method of manufacturing the pattern substrate 50 will be described with reference to FIGS. 24A to 24D. First, the substrate 51 is prepared. Then, as shown in Fig. 24A, a conductive layer 52a containing a conductive material is formed on the substrate 51. Then, as shown in Fig. The conductive layer 52a is a layer which becomes the conductive pattern 52 by being patterned. As the material constituting the conductive layer 52a, it is preferable to use a metal material having high adhesion to the resist pattern 54 described later. For example, it is preferable to use copper or a copper alloy.

Then, as shown in Fig. 24B, a resist pattern 54 having a predetermined pattern is formed on the conductive layer 52a. For example, first, a resist film is formed on the conductive layer 52a. For example, a film containing an acrylic photocurable resin, which is called a dry film, is affixed to the conductive layer 52a. Then, the resist film is exposed in a predetermined pattern, and then the resist film is developed to form a resist pattern 54. [

Thereafter, as shown in Fig. 24C, a part of the conductive layer 52a which is not covered with the resist pattern 54 is removed by wet etching. Then, as shown in Fig. 24D, the resist pattern 54 is removed. In this manner, the pattern substrate 50 on which the conductive pattern 52 having the pattern corresponding to the first metal layer 32 is formed can be obtained.

25 is an enlarged cross-sectional view showing an example of the conductive pattern 52 of the pattern substrate 50 obtained when the conductive layer 52a is patterned by wet etching. 26 is an enlarged cross-sectional view showing a deposition mask 20 obtained when the first film formation process is performed using the pattern substrate 50 shown in Fig.

In the case where etching is performed isotropically as in wet etching, a concave portion may be formed on the side surface 52c of the conductive pattern 52 as shown in Fig. The side wall 34c of the recess 34 of the first metal layer 32 of the deposition mask 20 protrudes toward the recess 34 as shown in Fig. As a result, it is considered that deformation of the portion of the first metal layer 32 where the concave portion 34 is formed in the normal direction of the deposition mask 20 is suppressed. The concave surface 20d of the first surface 20a of the deposition mask 20 is in contact with the organic EL substrate 92 in the position adjustment step of adjusting the position of the deposition mask 20 in the plane direction of the organic EL substrate 92, Contact with the EL substrate 92 can be suppressed more reliably. In addition, the end portion 33 of the outermost surface 20c of the deposition mask 20 can be brought into contact with the organic EL substrate 92 more reliably.

27 is an enlarged cross-sectional view showing another example of the conductive pattern 52 of the pattern substrate 50 obtained when the conductive layer 52a is patterned by wet etching. 28 is an enlarged cross-sectional view showing a deposition mask 20 obtained when the first film formation step is performed using the pattern substrate 50 shown in Fig. 27, the portion of the side surface 52c which is in contact with the substrate 51 is located outside the portion of the side surface 52c contacting the resist pattern 54 (the center of the conductive pattern 52) As shown in Fig. In other words, the bottom portion of the conductive pattern 52 is widened outward. The conductive pattern 52 shown in Fig. 27 is obtained when the time for wet etching the conductive layer 52a is shorter than that in the case shown in Fig. For example, by setting the time for performing the wet etching on the conductive layer 52a to the time calculated by dividing the thickness of the conductive layer 52a by the etching rate of the conductive layer 52a, that is, the so- A conductive pattern 52 shown in Fig. 27 is obtained.

The position of the bottom portion of the conductive pattern 52 shown in Fig. 27 is sensitive to the time for performing the wet etching. 28, when the position of the lower side portion of the conductive pattern 52 deviates outwardly, the position of the end portion 33 of the first metal layer 32 of the deposition mask 20 is shifted to the outside as well . Therefore, in order to stably determine the position of the end portion 33 of the first metal layer 32 of the deposition mask 20, it is preferable to make the wet etching time longer than the shortest etching time, as shown in Fig.

On the other hand, in order to facilitate the separation process of separating the deposition mask 20 including the first metal layer 32 and the second metal layer 37 formed on the pattern substrate 50 from the pattern substrate 50, It is preferable that the conductive pattern 52 has a base portion that widens outward as shown in Fig.

(Example of Performing Mold Release Treatment)

In order to facilitate the separation process of separating the deposition mask 20 from the pattern substrate 50, the pattern substrate 50 may be subjected to a release process before the first film formation process is performed. Hereinafter, an example of mold release processing will be described.

First, a degreasing process for removing oil on the surface of the pattern substrate 50 is performed. For example, an acidic degreasing liquid is used to remove oil on the surface of the conductive pattern 52 of the pattern substrate 50. [

Then, an activation process for activating the surface of the conductive pattern 52 is performed. For example, the same acid solution as the acid solution contained in the plating solution used in the subsequent plating process is brought into contact with the surface of the conductive pattern 52. For example, when the plating liquid contains nickel sulfamate, the sulfamic acid is brought into contact with the surface of the conductive pattern 52.

Then, an organic film forming process for forming a film of organic material on the surface of the conductive pattern 52 is performed. For example, a release agent containing an organic substance is brought into contact with the surface of the conductive pattern 52. At this time, the thickness of the organic film is set so that the electrical resistance of the organic film is so thin that the deposition of the first metal layer 32 by electrolytic plating is not hindered by the organic film.

After the degreasing process, the activating process, and the organic film forming process, the pattern substrate 50 is washed with water.

According to this modification, the separation process for separating the deposition mask 20 from the pattern substrate 50 can be facilitated by subjecting the pattern substrate 50 to the release process before performing the first film formation process.

In addition, while a few modifications of the above-described embodiment have been described, it is of course possible to apply a plurality of modifications appropriately in combination.

20: Deposition mask
20a: first side
20b: second side
20c: Outermost surface
20d: concave surface
22: Effective area
23: Ambient area
25: Through hole
30: first opening
31: Wall
32: First metal layer (first plating layer)
33: end
34:
34c: side wall
34e: outer edge
35: second opening
36: Wall
37: second metal layer (second plating layer)
38: end
41: Connection
50: pattern substrate
51: substrate
52: conductive pattern
52a: conductive layer
52c: Side
53: end
54: Resist pattern
55: Resist pattern
56: Clearance
57: Side
92: organic EL substrate
98: Deposition material

Claims (14)

A deposition mask manufacturing method for manufacturing a deposition mask having a plurality of through holes,
A first film forming step of forming a first metal layer having a first opening formed in a predetermined pattern on a substrate having an insulating property;
A second film forming step of forming a second metal layer on the first metal layer, the second metal layer having a second opening communicating with the first opening,
And a separation step of separating a combination of the first metal layer and the second metal layer from the substrate,
Wherein the second film forming step includes a resist forming step of forming a resist pattern on the substrate and the first metal layer with a predetermined gap therebetween and a step of forming a second resist pattern on the first metal layer in the gap of the resist pattern, And a plating process for depositing a metal layer,
Wherein the resist forming step is performed such that the first opening of the first metal layer is covered with the resist pattern and the gap of the resist pattern is located on the first metal layer. 2. The semiconductor device according to claim 1, wherein a conductive pattern having a pattern corresponding to the first metal layer is formed on the substrate,
Wherein the first film forming step includes a plating treatment step of depositing the first metal layer on the conductive pattern. The method according to claim 2, wherein the plating step of the first film forming step includes an electrolytic plating treatment step of depositing the first metal layer on the conductive pattern by flowing an electric current through the conductive pattern . The method according to claim 2 or 3, wherein, in the first film forming step, the first metal layer has a portion overlapping the conductive pattern when viewed along the normal direction of the substrate, and a portion overlapping the conductive pattern Also,
Wherein in the separation step, the first metal layer separated from the substrate and the conductive pattern is provided with a recess having a shape corresponding to the conductive pattern. The plating method according to any one of claims 1 to 4, wherein the plating process in the second film formation process is a plating process in which a current is supplied to the first metal layer to deposit an electrolytic plating A process for producing a deposition mask, the process comprising: The method for manufacturing a deposition mask according to any one of claims 1 to 5, wherein a thickness of a portion of the first metal layer connected to the second metal layer is 5 占 퐉 or less. 7. A method according to any one of claims 1 to 6, wherein the thickness of the second metal layer is in the range of 3 to 25 mu m. A deposition mask having a plurality of through holes extending from a first surface to a second surface,
And a metal layer in which the through hole is formed in a predetermined pattern,
A portion of the through hole that is located on the first surface is referred to as a first opening portion and a portion of the through hole that is located on the second surface is referred to as a second opening portion, Wherein when the deposition mask is viewed along the normal direction, the outline of the second opening is configured to surround the outline of the first opening,
And a concave portion is formed on the first surface. The deposition mask according to claim 8, wherein a width of a portion of the first surface on which the concave portion is not formed is within a range of 0.5 to 5.0 占 퐉. The method according to claim 8 or 9, wherein the metal layer comprises a first metal layer having the first opening and the recess formed thereon, and a second metal layer stacked on the first metal layer and having the second opening formed therein, . The method according to claim 10, wherein when the deposition mask is viewed along the normal direction of the deposition mask, the concave portion formed in the first metal layer surrounds the contour of the connection portion to which the first metal layer and the second metal layer are connected , A deposition mask. The deposition mask according to claim 10 or 11, wherein the thickness of the portion of the first metal layer connected to the second metal layer is 5 占 퐉 or less. 13. The deposition mask according to any one of claims 10 to 12, wherein the thickness of the second metal layer is in the range of 3 to 25 mu m. The deposition mask according to any one of claims 8 to 13, wherein the metal layer is a plating layer.

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