TWI651588B - Method for manufacturing vapor deposition mask and vapor deposition mask - Google Patents

Abstract

Provided is a method for manufacturing a vapor deposition mask having a through hole having a complicated shape by a plating process.

A method for manufacturing a vapor deposition mask includes: a first film forming process for forming a first metal layer having a first opening in a predetermined pattern on a substrate having insulation; and A second film formation process in which the second metal layer of the second opening is formed on the first metal layer. The second film formation process includes a resist formation process for forming a resist pattern on the substrate and the first metal layer by forming a predetermined gap; and forming a first resist layer on the first metal layer in the gap between the resist patterns. 2 metal layer plating process. The resist formation process is performed so that the first opening portion of the first metal layer is covered with the resist pattern, and the gap between the resist patterns is located on the first metal layer.

Description

Manufacturing method of vapor deposition mask and vapor deposition mask

The present invention relates to a method for manufacturing a vapor deposition mask having a plurality of through holes formed by a plating process. The present invention relates to a vapor deposition mask.

In recent years, display devices used in portable devices such as smart phones and tablet PCs are required to have high definition, for example, a pixel density of 400 ppi or more. In addition, in portable devices, the demand for ultra-high-definition is gradually increasing. In this case, the pixel density of the display device is required to be, for example, 800 ppi or more.

In order to improve the responsiveness, the low power consumption, and the high contrast, organic EL display devices have attracted attention. As a method of forming pixels of an organic EL display device, a method is known in which pixels are formed in a desired pattern using a vapor deposition mask including through holes arranged in a desired pattern. Specifically, first, a vapor deposition mask is closely adhered to a substrate for an organic EL display device, and then the closely adhered vapor deposition mask and the substrate are put together in a vapor deposition apparatus to perform vapor deposition of an organic material or the like. In this case, it is necessary to accurately produce an organic EL display device having a high pixel density. It is required to accurately reproduce the positions, shapes, and the like of the through holes of the vapor deposition mask according to the design, and to reduce the thickness of the vapor deposition mask.

A method for manufacturing a vapor deposition mask is disclosed in, for example, Patent Document 1, and a method of forming a through hole in a metal plate by etching using a photolithography technique is known. For example, first, a first resist pattern is formed on the first surface of the metal plate, and a second resist pattern is formed on the second surface of the metal plate. Next, etching is performed on a region of the first surface of the metal plate that is not covered by the first resist pattern, and a first recess is formed on the first surface of the metal plate. After that, etching is performed on a region of the second surface of the metal plate that is not covered by the second resist pattern, and a second recess is formed on the second surface of the metal plate. In this case, etching is performed so that the first recessed portion and the second recessed portion communicate with each other, so that a through hole penetrating the metal plate can be formed. The first surface of the metal plate refers to a surface that becomes the first surface of a vapor deposition mask that faces a substrate (hereinafter, also referred to as an organic EL substrate) for an organic EL display device. In addition, the second surface of the metal plate refers to the surface that becomes the second surface that constitutes the vapor deposition mask located on the vapor deposition source side of the crucible or the like that holds the vapor deposition material.

In addition, in the etching process, the erosion of the metal plate progresses not only in the normal direction of the metal plate, but also in the direction along the plate surface of the metal plate. That is to say, the portion of the metal plate covered by the resist pattern also erodes the metal plate at least partially. Therefore, it is impossible to form through-holes in a metal plate using a etching method such as a resist pattern. Therefore, it is difficult to accurately reproduce the shape of the through-holes of the vapor deposition mask as designed. In addition, when the through-holes have different sizes on the first surface side and the second surface side of the metal surface, such as when the through-holes have a complicated shape, the vapor deposition is actually made. The reproducibility of the through holes of the mask with respect to the design may be further reduced.

In addition, when a vapor deposition mask is produced by etching, the degree of erosion of the metal plate in the direction along the plate surface of the metal plate changes depending on the length of time until the etching is completed in the normal direction of the metal plate. That is, the shape of the through hole varies depending on the thickness of the metal plate. For this reason, it is not easy to accurately reproduce both the thickness of the metal plate, that is, the thickness of the vapor deposition mask and the shape of the through hole.

A method for manufacturing a vapor deposition mask is a method for producing a vapor deposition mask by a plating process as disclosed in, for example, Patent Document 2 in addition to the above-mentioned etching method. In the method described in, for example, Patent Document 2, first, a mother plate having conductivity is prepared. Next, a predetermined gap is made on the master plate to form a resist pattern. This resist pattern is provided at a position where a through hole of a vapor deposition mask should be formed. After that, the plating solution is supplied to the gaps between the resist patterns, and the metal is chromatographed out on the mother plate by electrolytic plating treatment. After that, the metal layer is separated from the mother plate, so that a vapor deposition mask having a plurality of through holes formed can be obtained.

In the method of manufacturing a vapor deposition mask by a plating process, a through-hole can be formed in a metal plate, such as a resist pattern. That is, the position, shape, and the like of the through holes of the vapor deposition mask can be accurately reproduced as designed. In addition, by adjusting the time for continuing the plating process, the thickness of the vapor deposition mask can be set independently of the position, shape, and the like of the through holes of the vapor deposition mask.

[Prior technical literature]

[Patent Literature]

[Patent Document 1] Japanese Invention Patent No. 5382259

[Patent Document 2] Japanese Patent Publication No. 2001-234385

In the vapor deposition process, in order to suppress the occurrence of shadows or to precisely control the area, shape, and thickness of the vapor deposition material attached to the organic EL substrate, the shape and size of the through holes that require a vapor deposition mask vary depending on the position. For example, the above-mentioned Patent Document 1 shows an example in which the opening size of the through hole on the first surface side of the vapor deposition mask is smaller than the opening size of the through hole on the second surface side. However, according to the method described in Patent Document 2, it is impossible to produce a vapor deposition mask having such a through hole having a complicated shape.

The present invention has been made by the creators in consideration of such problems, and an object thereof is to provide a method for manufacturing a vapor deposition mask having through holes having a complicated shape by a plating process.

The present invention relates to a method for manufacturing a vapor deposition mask, which is a method for producing a vapor deposition mask having a plurality of through holes formed thereon. A first film-forming procedure; a second film-forming procedure in which a second metal layer provided with a second opening that communicates with the first opening is formed on the first metal layer; And a separation procedure for separating the combination of the first metal layer and the second metal layer from the substrate; the second film formation procedure includes: vacating a predetermined gap on the substrate and the first metal layer A resist formation process for forming a resist pattern; and a plating treatment process for chromatography of the second metal on the first metal layer in the gap of the resist pattern; the resist formation process is It is implemented that the first opening of the first metal layer is covered by the resist pattern, and the gap of the resist layer pattern is located on the first metal layer.

In the method for manufacturing a vapor deposition mask according to the present invention, a conductive pattern having a pattern corresponding to the first metal layer may be formed on the substrate, and the first film forming procedure may include the conductivity. The pattern is applied to the plating process of the first metal chromatography.

In the method for manufacturing a vapor deposition mask according to the present invention, the coating process of the first film formation process may include a method in which a current is passed through the conductive pattern to form the first metal layer on the conductive pattern. Precipitated electrolytic plating process.

In the first film formation procedure, the first metal layer may be formed on a portion overlapping with the conductive pattern and not overlapping with the conductive pattern when viewed along a normal direction of the substrate. In any one of the parts, in the separation process, a depression having a shape corresponding to the conductive pattern is formed in the first metal layer separated from the substrate and the conductive pattern.

In the manufacturing method of the vapor deposition mask according to the present invention, the aforementioned coating treatment procedure of the second film formation procedure may include the step of causing a current to flow in The first metal layer is an electrolytic plating treatment process for chromatography of the second metal on the first metal layer.

The present invention is a vapor deposition mask having a plurality of through holes formed from a first surface to a second surface, including a metal layer for forming the through holes in a predetermined pattern, and placing the through holes on the first surface. The part is called a first opening, and when the part on the second surface among the through holes is called a second opening, the through hole is configured to follow a normal line of the vapor deposition mask. When the vapor deposition mask is viewed in a direction, an outline of the second opening portion surrounds an outline of the first opening portion, and a recessed portion is formed on the first surface.

In the vapor deposition mask according to the present invention, the width of a portion of the first surface where the recessed portion is not formed may be in a range of 0.5 to 5.0 μm.

In the vapor deposition mask according to the present invention, the metal layer may include a first metal layer formed with the first opening portion and the recessed portion, and a second metal layer laminated on the first metal layer to form the second metal layer. The second metal layer in the opening.

In the case where the vapor deposition mask according to the present invention can also be viewed along the normal direction of the vapor deposition mask, the depression formed in the first metal layer surrounds and connects the vapor deposition mask. An outline of a connection portion between the first metal layer and the second metal layer.

In the vapor deposition mask according to the present invention, the aforementioned metal layer may be a plating layer.

The evaporation mask and its manufacturing method according to the present invention can also be The thickness of a portion of the first metal layer connected to the second metal layer is 5 μm or less.

In the vapor deposition mask and its manufacturing method according to the present invention, the thickness of the second metal layer may be in a range of 3 to 50 μm, more preferably in a range of 3 to 30 μm, and even more preferably in a range of 3 to 25 μm. Inside.

A method for manufacturing a vapor deposition mask according to the present invention includes: a first film forming process for forming a first metal layer having a first opening in a predetermined pattern on a substrate having insulation; and The second film formation process in which the second metal layer of the first opening portion and the second metal layer of the second opening portion are formed on the first metal layer. The second film formation process includes a resist formation process for forming a resist pattern on the substrate and the first metal layer by forming a predetermined gap; and forming a first resist layer on the first metal layer in the gap between the resist patterns. 2 metal layer plating process. Therefore, both the shape defined by the first opening portion of the first metal layer and the shape defined by the second opening portion of the second metal layer may be provided for the through hole of the vapor deposition mask. Therefore, a through hole having a complicated shape can be accurately formed. In addition, the second metal layer is formed by a plating process so that the thickness of the vapor deposition mask can be arbitrarily set independently of the shape of the through hole.

20‧‧‧Evaporation mask

20a‧‧‧Part 1

20b‧‧‧Part 2

20c‧‧‧ the most superficial

20d‧‧‧ concave surface

22‧‧‧Effective area

23‧‧‧ Surrounding area

25‧‧‧through hole

30‧‧‧The first opening

31‧‧‧wall

32‧‧‧ 1st metal layer (1st plating layer)

33‧‧‧ tip

34‧‧‧ Depression

34c‧‧‧ sidewall

34e‧‧‧rim

35‧‧‧ 2nd opening

36‧‧‧Wall surface

37‧‧‧Second metal layer (second plating)

38‧‧‧ tip

41‧‧‧Connection Department

50‧‧‧ pattern substrate

51‧‧‧ substrate

52‧‧‧Conductive pattern

52a‧‧‧ conductive layer

52c‧‧‧side

53‧‧‧ tip

54‧‧‧ resist pattern

55‧‧‧ resist pattern

56‧‧‧ Clearance

57‧‧‧ side

92‧‧‧Organic EL substrate

98‧‧‧Evaporation material

[Fig. 1] Fig. 1 relates to an embodiment of the present invention, and includes vapor deposition A schematic plan view of an example of a vapor deposition mask device of a mask is shown.

[Fig. 2] Fig. 2 is a diagram for explaining a method of vapor deposition using the vapor deposition mask device shown in Fig. 1. [Fig.

[FIG. 3] FIG. 3 is a partial plan view illustrating the evaporation mask shown in FIG. 1. [FIG.

[Fig. 4] Fig. 4 is a sectional view taken along the line IV-IV in Fig. 3. [Fig.

[FIG. 5] FIG. 5 is a cross-sectional view showing a part of the first metal layer and the second metal layer of the vapor deposition mask shown in FIG. 4 enlarged.

6 is a cross-sectional view showing a pattern substrate including a conductive pattern formed on a substrate.

[FIG. 7A] FIG. 7A is a cross-sectional view illustrating a first plating process program for first electrochromatizing a first metal on a conductive pattern.

[FIG. 7B] FIG. 7B is a plan view illustrating the first metal layer of FIG. 7A.

[FIG. 8A] FIG. 8A is a cross-sectional view illustrating a resist formation process for forming a resist pattern on a pattern substrate and a first metal layer.

[FIG. 8B] FIG. 8B is a plan view illustrating the resist pattern of FIG. 8A.

[FIG. 9] FIG. 9 is a cross-sectional view illustrating a second plating process program for chromatography of a second metal on a first metal layer.

[Fig. 10] Fig. 10 is a diagram illustrating a removal program for removing a resist pattern.

[FIG. 11A] FIG. 11A is a diagram illustrating a separation procedure for separating a combination of a first metal layer and a second metal layer from a pattern substrate.

[FIG. 11B] FIG. 11B is a plan view illustrating a case where the vapor deposition mask of FIG. 11A is viewed from the second surface side.

[FIG. 12] FIG. 12 is a cross-sectional view showing a first film-forming procedure for forming a first metal layer on a substrate, which is a first modification of the embodiment of the present invention.

[FIG. 13] FIG. 13 is a cross-sectional view showing a second plating process program for subjecting a second metal to chromatography on the first metal layer shown in FIG.

14 is a cross-sectional view showing a vapor deposition mask in a first modification of the embodiment of the present invention.

[FIG. 15] FIG. 15 is a cross-sectional view showing a resist formation process for forming a resist pattern on a pattern substrate and a first metal layer, which is a second modification of the embodiment of the present invention.

[FIG. 16] FIG. 16 is a cross-sectional view illustrating a second plating process program for forming a second metal on a first metal layer, which is a second modification of the embodiment of the present invention.

17 is a cross-sectional view showing a vapor deposition mask in a second modification of the embodiment of the present invention.

[FIG. 18] FIG. 18 is a diagram illustrating a modified example of a vapor deposition mask device including a vapor deposition mask.

[FIG. 19] FIG. 19 is a cross-sectional view illustrating a vapor deposition mask showing a recessed portion.

[FIG. 20] FIG. 20 is an enlarged cross-sectional view showing the vapor deposition mask shown in FIG. 19. [FIG.

[FIG. 21] FIG. 21 is a plan view illustrating a case where the vapor deposition mask is viewed from the first surface side.

22A is a diagram illustrating a position adjustment program for adjusting a position of a vapor deposition mask in a planar direction of an organic EL substrate.

22B] FIG. 22B is a figure which shows the adhesion | attachment procedure which adheres a vapor deposition mask to an organic EL substrate. [FIG.

[FIG. 22C] FIG. 22C is a diagram illustrating an example in which the recessed surface of the recessed portion of the vapor deposition mask is in close contact with the organic EL substrate.

[Fig. 23] Fig. 23 is a plan view illustrating a modification of the arrangement of the plurality of through holes in the vapor deposition mask.

[FIG. 24A] FIG. 24A is a diagram for explaining a method of manufacturing a pattern substrate.

[FIG. 24B] FIG. 24B is a figure for explaining the manufacturing method of a pattern substrate.

[FIG. 24C] FIG. 24C is a diagram for explaining a method of manufacturing a pattern substrate.

24D] FIG. 24D is a figure for demonstrating the manufacturing method of a pattern substrate.

[FIG. 25] FIG. 25 is an enlarged cross-sectional view showing an example of a conductive pattern of a pattern substrate.

[FIG. 26] FIG. 26 is an enlarged cross-sectional view showing a vapor deposition mask obtained when the first film formation process is performed using the pattern substrate shown in FIG. 25. [FIG.

[Fig. 27] Fig. 27 shows another example of the conductive pattern of the pattern substrate. Large and illustrated section.

[FIG. 28] FIG. 28 is an enlarged cross-sectional view showing a vapor deposition mask obtained when the first film formation process is performed using the pattern substrate shown in FIG. 27.

Hereinafter, one embodiment of the present invention will be described with reference to the drawings. In addition, in the drawings attached to this manual, for ease of illustration and understanding, the scale and aspect ratios of the scale and the like are appropriately changed and expanded from the actual ones.

1 to 28 are diagrams for explaining an embodiment of the present invention and a modification example thereof. In the following embodiments and modifications thereof, a manufacturing method of a vapor deposition mask used for patterning an organic material on a substrate in a desired pattern when manufacturing an organic EL display device will be described as an example. However, the present invention is not limited to such an application, and the present invention can be applied to a method for manufacturing a vapor deposition mask for various uses.

In addition, in this specification, the terms "plate", "sheet", and "membrane" are based only on differences in terms of names, rather than differences from each other. For example, "board" also includes the concept of a material such as a sheet or film.

In addition, the "plate surface (sheet surface, film surface)" refers to the target plate-shaped structure when the target plate-shaped (sheet-shaped, film-like) structure is viewed as a whole and on a larger scale. (Sheet-shaped member, film-like member) The planes whose plane directions are uniform. In addition, for plate-like (sheet-like, film-like) structures The "normal direction" used for the material refers to the normal direction with respect to the plate surface (sheet surface, film surface) of the structural material.

In addition, terms, lengths, and angles such as "parallel", "orthogonal", "same", and "equivalent" are specified for the shapes, geometrical conditions, physical characteristics, and the degree of these used in this specification. The values of physical properties and the like are not tied to a strict meaning, and should be interpreted to include a range in which the same function can be expected.

(Evaporation mask device)

First, an example of a vapor deposition mask device including a vapor deposition mask will be described with reference to FIGS. 1 to 4. Here, FIG. 1 is a plan view illustrating an example of a vapor deposition mask device including a vapor deposition mask, and FIG. 2 is a view illustrating a method of using the vapor deposition mask device shown in FIG. 1. . FIG. 3 is a plan view of the vapor deposition mask viewed from the side of the first surface, and FIG. 4 is a cross-sectional view taken along line IV-IV of FIG. 3.

The vapor deposition mask device 10 shown in FIGS. 1 and 2 includes a plurality of vapor deposition masks 20 having a substantially rectangular shape in a plan view, and a frame 15 attached to a peripheral portion of the plurality of vapor deposition masks 20. . Each vapor deposition mask 20 is provided with a plurality of through holes 25 penetrating through the vapor deposition mask 20. This vapor deposition mask device 10 is shown in FIG. 2. The vapor deposition mask 20 is formed in a vapor deposition device 90 and is supported by a vapor deposition device 90 facing a lower surface of a substrate to be vapor-deposited, such as an organic EL substrate 92. The vapor deposition material of the organic EL substrate 92 is vapor-deposited.

In the vapor deposition device 90, The magnetic force causes the vapor deposition mask 20 to be in close contact with the organic EL substrate 92. In the vapor deposition device 90, a crucible 94 that houses a vapor deposition material (organic light-emitting material) 98 and a heater 96 that heats the crucible 94 are disposed below the vapor deposition mask device 10. The vapor deposition material 98 in the crucible 94 is adhered to the surface of the organic EL substrate 92 by being vaporized or sublimated by heating from the heater 96. As described above, a plurality of through holes 25 are formed in the vapor deposition mask 20, and the vapor deposition material 98 is attached to the organic EL substrate 92 through the through holes 25. As a result, a vapor deposition material 98 is formed on the surface of the organic EL substrate 92 in a desired pattern corresponding to the positions of the through holes 25 of the vapor deposition mask 20. In FIG. 2, a surface (hereinafter, also referred to as a first surface) that faces the organic EL substrate 92 during the vapor deposition process among the surfaces of the vapor deposition mask 20 is denoted by reference numeral 20 a. In addition, among the surfaces of the vapor deposition mask 20, a surface (hereinafter, also referred to as a second surface) on the side of a vapor deposition source (here, the crucible 94) of the vapor deposition material 98 is denoted by reference numeral 20 b.

As described above, in this embodiment, the through-holes 25 are arranged in each effective region 22 in a predetermined pattern. In addition, when color display is desired, the vapor deposition mask 20 (the vapor deposition mask device 10) and the organic EL substrate 92 can be made little by little along the arrangement direction of the through holes 25 (one of the aforementioned directions). The relative movement sequentially vapor-deposits the organic light-emitting material for red, the organic light-emitting material for green, and the organic light-emitting material for blue. Alternatively, a vapor deposition machine equipped with a vapor deposition mask 20 corresponding to each color may be separately prepared, and the organic EL substrate 92 may be sequentially placed in each vapor deposition machine.

The frame 15 of the vapor deposition mask device 10 is attached to a peripheral portion of the rectangular vapor deposition mask 20. Frame 15 with evaporation mask 20 The non-deflection method is maintained in a state where the vapor deposition mask 20 is stretched. The vapor deposition mask 20 and the frame 15 are fixed to each other by, for example, spot welding.

In addition, the vapor deposition process may be performed inside the vapor deposition device 90 which is a high-temperature environment. In this case, during the vapor deposition process, the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 held inside the vapor deposition device 90 are also heated. In this case, the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 show behaviors based on the dimensional changes of the respective thermal expansion coefficients. In this case, when the thermal expansion coefficients of the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 are significantly different, a position shift due to such a dimensional change occurs, and as a result, the organic EL substrate 92 is attached The dimensional accuracy, position accuracy, etc. of the vapor deposition material on the surface may be reduced. In order to solve such a problem, it is preferable that the thermal expansion coefficients of the vapor deposition masks 20 and 15 and the thermal expansion coefficients of the organic EL substrate 92 are equal to each other. For example, when a glass substrate is used for the organic EL substrate 92, a nickel-containing iron alloy can be used as a main material of the vapor deposition mask 20 and the frame 15. For example, an invar material containing 34 to 38% by mass of nickel, a super invar material containing cobalt in addition to 30 to 34% by mass of nickel, and a low thermal expansion Fe-Ni containing 38 to 54% by mass of nickel can be used. Based plating alloys and the like are used as materials for the first metal layer 32 and the second metal layer 37 which will be described later to constitute the vapor deposition mask 20. In addition, in this specification, a numerical range expressed by a symbol such as "~" includes a value placed before and after a symbol such as "~". For example, the numerical range defined by the expression "34 to 38% by mass" is the same as the numerical range defined by the expression "34% by mass or more and 38% by mass".

In addition, when the temperature of the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 does not reach a high temperature during the vapor deposition process, it is not necessary to make the thermal expansion coefficient of the vapor deposition mask 20 and the frame 15 equal to that of the organic EL substrate 92. Coefficient of thermal expansion. In this case, various materials other than the above-mentioned nickel-containing iron alloy can be used as a material of the first metal layer 32 and the second metal layer 37 described later that constitute the vapor deposition mask 20. For example, chromium-containing iron alloys, nickel, nickel-cobalt alloys, and the like can be used. As for the chromium-containing iron alloy, for example, an iron alloy called so-called stainless steel can be used.

(Evaporation mask)

Next, the vapor deposition mask 20 will be described in detail. As shown in FIG. 1, in this embodiment, the vapor deposition mask 20 has a substantially quadrangular shape in a plan view, and more specifically has a substantially rectangular outline in a plan view. The vapor deposition mask 20 includes an effective area 22 in which through holes 25 are formed in a regular arrangement, and a surrounding area 23 surrounding the effective area 22. The peripheral region 23 is a region for supporting the effective region 22 and is not a region intended to pass through a vapor deposition material deposited on the substrate. For example, in the vapor deposition mask 20 used for vapor deposition of an organic light-emitting material for an organic EL display device, the effective area 22 faces a display area of an organic EL substrate 92 that becomes a pixel formed by vapor-depositing an organic light-emitting material. The area within the area of the vapor deposition mask 20. Among them, through-holes, recesses, and the like may be formed in the peripheral region 23 for various purposes. In the example shown in FIG. 1, each effective region 22 has a substantially quadrangular shape in a plan view, and more specifically has a substantially rectangular outline in a plan view. In addition, although not shown, each effective area 22 The shape of the display area of the organic EL substrate 92 has a contour of various shapes. For example, each effective area 22 may have a circular outline.

In the example shown in the figure, the plurality of effective regions 22 of the vapor deposition mask 20 are arranged in a row with a predetermined interval vacated in a direction parallel to the longitudinal direction of the vapor deposition mask 20. In the illustrated example, one active area 22 corresponds to one organic EL display device. That is, in the case of the vapor deposition mask device 10 (the vapor deposition mask 20) shown in FIG. 1, multi-face vapor deposition can be performed.

As shown in FIG. 3, in the illustrated example, a plurality of through holes 25 formed in each effective region 22 are tied to the effective region 22 and are arranged at predetermined intervals along two directions orthogonal to each other. The shape and the like of this through hole 25 will be described in more detail with reference to FIGS. 3 and 4.

As shown in FIGS. 3 and 4, the vapor deposition mask 20 includes a metal layer having a plurality of through holes 25 formed in a predetermined pattern. The metal layer includes a first metal layer 32 provided with a first opening 30 in a predetermined pattern, and a second metal layer 37 provided with a second opening 35 communicating with the first opening 30. The second metal layer 37 is disposed on the second surface 20 b side of the vapor deposition mask 20 than the first metal layer 32. In the example shown in FIG. 4, the first metal layer 32 constitutes the first surface 20 a of the vapor deposition mask 20, and the second metal layer 37 constitutes the second surface 20 b of the vapor deposition mask 20. In addition, in this embodiment, the metal layer is a plating layer produced by a plating treatment program as described later. For example, the first metal layer 32 is a first plating layer produced by a first plating processing procedure described later, and the second metal layer 37 is a second plating layer produced by a second plating processing procedure described later.

In this embodiment, the first opening 30 and the second opening are The portions 35 communicate with each other to form a through hole 25 that penetrates the vapor deposition mask 20. In this case, the opening size, the opening shape, and the like of the through hole 25 on the first surface 20 a side of the vapor deposition mask 20 are defined by the first opening portion 30 of the first metal layer 32. On the other hand, the opening size, opening shape, and the like of the through hole 25 on the second surface 20 b side of the vapor deposition mask 20 are defined by the second opening portion 35 of the second metal layer 37. In other words, both the shape defined by the first opening portion 30 of the first metal layer 32 and the shape defined by the second opening portion 35 of the second metal layer 37 are provided in the through hole 25.

As shown in FIG. 3, the first opening portion 30, the second opening portion 35, and the like constituting the through hole 25 may have a substantially polygonal shape in a plan view. Here, an example where the first opening portion 30 and the second opening portion 35 are substantially quadrangular, and more specifically, an example of a substantially square shape is shown. Although not shown, the first opening portion 30, the second opening portion 35, and the like may have other substantially polygonal shapes such as a substantially hexagonal shape, a substantially octagonal shape, and the like. The "substantially polygonal shape" is a concept including a shape in which corners of a polygon are rounded. Although not shown, the first opening 30, the second opening 35, and the like may be circular. In addition, as long as the outline of the second opening portion 35 surrounding the first opening portion 30 is provided in a plan view, the shape of the first opening portion 30 and the shape of the second opening portion 35 need not be similar.

Although not shown, the first opening portion 30, the second opening portion 35, and the like constituting the through hole 25 may have a shape other than a polygonal shape in plan view, such as a circle.

In FIG. 4, reference numeral 41 denotes a connection to the first metal layer 32. A connection portion with the second metal layer 37. In addition, although FIG. 4 shows an example in which the first metal layer 32 and the second metal layer 37 are connected, it is not limited to this, and other layers may be interposed between the first metal layer 32 and the second metal layer 37. For example, a catalyst layer for promoting the precipitation of the second metal layer 37 on the first metal layer 32 may be provided between the first metal layer 32 and the second metal layer 37.

FIG. 5 is an enlarged view of a portion of the first metal layer 32 and the second metal layer 37 in FIG. 4. As shown in FIG. 5, the width M2 of the second metal layer 37 on the second surface 20 b of the vapor deposition mask 20 is smaller than the width M1 of the first metal layer 32 on the first surface 20 a of the vapor deposition mask 20. . In other words, the opening size S2 of the through hole 25 (the second opening portion 35) in the second surface 20b is larger than the opening size S1 of the through hole 25 (the first opening portion 30) in the first surface 20a. The advantages of the first metal layer 32 and the second metal layer 37 thus constituted will be described below.

The vapor deposition material 98 flying from the second surface 20 b side of the vapor deposition mask 20 is sequentially attached to the organic EL substrate 92 through the second opening portion 35 and the first opening portion 30 of the through hole 25. The area on the organic EL substrate 92 to which the vapor deposition material 98 adheres depends mainly on the opening size S1, the opening shape, and the like of the through hole 25 on the first surface 20a. In addition, as shown in FIG. 4 by the arrow L1 from the second surface 20b side toward the first surface 20a, the vapor deposition material 98 is directed from the crucible 94 toward the organic EL substrate 92 and not only along the normal direction of the vapor deposition mask 20 N moves, and may also move in a direction that is substantially inclined with respect to the normal direction N of the vapor deposition mask 20. Here, it is assumed that the opening size S2 of the through hole 25 in the second surface 20b and the opening dimension S2 in the first surface 20a When the opening size S1 of the through hole 25 is the same, most of the vapor deposition material 98 moving in a direction substantially inclined with respect to the normal direction N of the vapor deposition mask 20 passes through the through hole 25 and reaches the organic EL substrate 92 before reaching The wall surface 36 of the second opening portion 35 of the through hole 25 is adhered. Therefore, in order to improve the utilization efficiency of the vapor deposition material 98, it is preferable to increase the opening size S2 of the second opening portion 35, that is, it is preferable to reduce the width M2 of the second metal layer 37.

In FIG. 4, the minimum angle formed by the straight line L1 passing through the end portion 38 of the second metal layer 37 and the end portion 33 of the first metal layer 32 with respect to the normal direction N of the vapor deposition mask 20 is denoted by the symbol θ1 Means. It is advantageous to increase the angle θ1 so that the vapor deposition material 98 moving obliquely does not reach the organic EL substrate 92 as far as possible under the wall surface 36 of the second opening 35. In terms of increasing the angle θ1, it is effective to reduce the width M2 of the second metal layer 37 compared to the width M1 of the first metal layer 32. It is also apparent from the figure that in terms of increasing the angle θ1, it is also effective to reduce the thickness T1 of the first metal layer 32, the thickness T2 of the second metal layer 37, and the like. Here, the “thickness T1 of the first metal layer 32” refers to the thickness of a portion of the first metal layer 32 that is connected to the second metal layer 37. When the width M2 of the second metal layer 37, the thickness T1 of the first metal layer 32, and the thickness T2 of the second metal layer 37 are excessively reduced, the strength of the vapor deposition mask 20 is reduced. The plated mask 20 may be damaged. For example, the vapor deposition mask 20 may be damaged due to the tensile stress applied to the vapor deposition mask 20 when the vapor deposition mask 20 is stretched to the frame 15. When considering these aspects, it can be said that the sizes of the first metal layer 32 and the second metal layer 37 are preferably set to the following ranges. selected. Thereby, the angle θ1 can be set to, for example, 45 ° or more.

‧Width M1 of the first metal layer 32: 5 to 25 μm

‧Width M2 of the second metal layer 37: 2 to 20 μm

‧Thickness T0 of the vapor deposition mask 20: 5 to 50 μm

‧Thickness T1 of the first metal layer 32: 5 μm or less

‧Thickness T2 of the second metal layer 37: 2 to 50 μm, more preferably 3 to 50 μm, more preferably 3 to 30 μm, and even more preferably 3 to 25 μm

Table 1 shows the following example: The values of the sizes of the first metal layer 32 and the second metal layer 37 obtained in accordance with the number of display pixels and the number of display pixels in a 5-inch organic EL display device. In addition, "FHD" refers to Full High Definition, "WQHD" refers to Wide Quad High Definition, and "UHD" refers to Ultra High Definition.

Next, the shape of the first metal layer 32 will be described in more detail. As shown in FIG. 5 by a dotted line, when the first metal layer 32 of the end portion 33 has a steep shape gradually increasing toward the second surface 20b side, the vapor after passing through the second opening portion 35 of the through hole 25 The plating material 98 should reach and adhere to the wall surface 31 of the first metal layer 32 in many cases. This is to suppress the adhesion of the vapor deposition material 98 to the first metal layer 32 near the end portion 33 as shown in the figure. As shown in FIG. 5, the first metal layer 32 is attached to the end portion 33 and its vicinity, and preferably has a thickness smaller than the thickness T1 of the portion connected to the second metal layer 37 among the first metal layer 32. As shown in FIG. 5, for example, it is preferable that the thickness of the first metal layer 32 monotonously decrease as the portion connected to the second metal layer 37 among the first metal layer 32 moves toward the end portion 33. The shape of the first metal layer 32 can be realized by forming the first metal layer 32 by a plating process as described later.

In FIG. 5, the symbol θ2 indicates an angle formed by the cut surface L2 toward the wall surface 31 of the first metal layer 32 and the normal direction N of the vapor deposition mask 20 at the end portion 33. In order to prevent the deposition material 98 that has passed through the second opening 35 of the through hole 25 from adhering to the wall surface 31 of the first metal layer 32, it is also effective to increase the angle θ2 to be greater than 0 °. Preferably, the angle θ2 is 30 ° or more, and more preferably 45 ° or more. Such an angle θ2 can also be realized by forming the first metal layer 32 by a plating process. The “wall surface 31” refers to a surface defining the first opening portion 30 among the surfaces of the first metal layer 32. The “wall surface 36” described above also refers to the surface defining the second opening portion 35 among the surfaces of the second metal layer 37.

(Manufacturing method of vapor deposition mask)

Next, a method of manufacturing the vapor deposition mask 20 having the above-described configuration will be described with reference to FIGS. 6 to 11B.

(First film formation procedure)

First, a description will be given of forming a substrate on an insulating substrate 51. The first film forming process of the first metal layer 32 provided with the first openings 30 in a predetermined pattern. First, as shown in FIG. 6, a pattern substrate 50 having a substrate 51 having an insulating property and a conductive pattern 52 formed on the substrate 51 is prepared. The conductive pattern 52 has a pattern corresponding to the first metal layer 32. The material constituting the substrate 51 and the thickness of the substrate 51 are not limited as long as they have insulating properties and appropriate cutting strength. For example, as the material constituting the substrate 51, glass, synthetic resin, or the like can be used.

As a material constituting the conductive pattern 52, a conductive material such as a metal material or an oxide conductive material is used as appropriate. Examples of the metal material include chromium and copper. Preferably, a material having high adhesion to a resist pattern 54 described later is used as a material constituting the conductive pattern 52. For example, in a case where a resist film including an acrylic photocurable resin is referred to as a so-called dry film for patterning to form the resist pattern 54, the material constituting the conductive pattern 52 has a high resistance to the dry film. The adhesive copper is preferred.

As described later, the first metal layer 32 is formed on the conductive pattern 52 so as to cover the conductive pattern 52, and the first metal layer 32 is separated from the conductive pattern 52 in a subsequent procedure. For this reason, in general, a depression corresponding to the thickness of the conductive pattern 52 is formed on the surface on the side of the first metal layer 32 that is in contact with the conductive pattern 52. In consideration of this point, as long as the conductive pattern 52 has the conductivity required for electrolytic plating treatment, it is preferable that the thickness of the conductive pattern 52 is small. For example, the thickness of the conductive pattern 52 is in the range of 50 to 500 nm.

Next, implementation is performed on a substrate on which the conductive pattern 52 is formed. A first plating treatment process in which a first plating solution is supplied on 51 and a first metal layer 32 is deposited on the conductive pattern 52. For example, the substrate 51 on which the conductive pattern 52 is formed is caused to penetrate into a plating tank filled with the first plating solution. Thereby, as shown in FIG. 7A, it is possible to obtain a first metal layer 32 having a first opening 30 in a predetermined pattern on the pattern substrate 50. FIG. 7B is a plan view illustrating the first metal layer 32 formed on the substrate 51.

In addition, in terms of the characteristics of the plating process, as shown in FIG. 7A, the first metal layer 32 is formed not only in a portion overlapping with the conductive pattern 52 but also in a case where the first metal layer 32 is seen along the normal direction of the substrate 51, and is not conductive. Part of the sexual pattern 52. This is because the first metal layer 32 is further deposited on the surface of the first metal layer 32 which is deposited on a portion overlapping the end portion 53 of the conductive pattern 52. As a result, as shown in FIG. 7A, the end portion 33 of the first metal layer 32 can be located at a portion that does not overlap the conductive pattern 52 when viewed in the normal direction of the substrate 51. On the other hand, only the portion where the metal deposition progresses in the plate surface direction of the substrate 51 rather than the thickness direction, the thickness of the first metal layer 32 at the end portion 33 becomes smaller than the thickness at the center portion. For example, as shown in FIG. 7A, the thickness of the first metal layer 32 decreases monotonically at least partially as it goes from the center portion to the end portion 33 of the first metal layer 32. As a result, the angle θ2 described above also becomes larger than 0 °.

In FIG. 7A, the width of a portion of the first metal layer 32 that does not overlap the conductive pattern 52 is represented by a symbol w. The width w is in a range of, for example, 0.5 to 5.0 μm. The size of the conductive pattern 52 is set in consideration of this width w.

As long as the first metal layer 32 can be deposited on the conductive pattern 52, the specific method of the first plating process is not particularly limited. For example, the first plating treatment program can be implemented by a so-called electrolytic plating treatment program that allows a current to flow through the conductive pattern 52 to precipitate the first metal layer 32 on the conductive pattern 52. Alternatively, the first plating treatment program may be an electroless plating treatment program. When the first plating process is an electroless plating process, an appropriate catalyst layer is provided on the conductive pattern 52. When the electrolytic plating process is performed, a catalyst layer may be provided on the conductive pattern 52.

The composition of the first plating solution used is determined in accordance with the characteristics required for the first metal layer 32. For example, when the first metal layer 32 is composed of a nickel-containing iron alloy, a mixed solution of a solution containing a nickel compound and a solution containing an iron compound can be used for the first plating solution. For example, a mixed solution of a solution containing nickel sulfamate and a solution containing iron sulfamate can be used. The plating solution may contain additives such as malonic acid and saccharin.

(2nd film formation procedure)

Next, a second film-forming procedure is performed in which the second metal layer 37 provided with the second opening portion 35 communicating with the first opening portion 30 is formed on the first metal layer 32. First, a resist formation process is performed in which a predetermined gap 56 is made on the substrate 51 of the pattern substrate 50 and the first metal layer 32 to form a resist pattern 55. 8A and 8B are a cross-sectional view and a plan view showing a resist pattern 55 formed on a substrate 51. As shown in FIG. 8A and FIG. 8B, the resist formation process is performed as follows: The opening 30 is covered by the resist pattern 55, and the gap 56 of the resist pattern 55 is located on the first metal layer 32.

An example of a resist formation process is described below. First, a dry film is attached to the substrate 51 of the pattern substrate 50 and the first metal layer 32 to form a negative-type resist film. Examples of the dry film include those containing an acrylic photocurable resin such as RY3310 manufactured by Hitachi Chemical. Next, an exposure mask is prepared to prevent light from transmitting through the area of the resist film that should be the gap 56, and the exposure mask is placed on the resist film. Thereafter, the exposure mask is sufficiently adhered to the resist film by vacuum adhesion. For the resist film, a positive type can also be used. In this case, as the exposure mask, an exposure mask is used which is made to transmit light to a region to be removed in the resist film.

Thereafter, the resist film is exposed through an exposure mask. Furthermore, the resist film is developed in order to form an image on the exposed resist film. In the above manner, as shown in FIGS. 8A and 8B, a resist pattern 55 having a gap 56 on the first metal layer 32 and covering the first opening 30 of the first metal layer 32 can be formed. In addition, in order to make the resist pattern 55 more firmly adhere to the substrate 51 and the first metal layer 32, a heat treatment process for heating the resist pattern 55 may be performed after the development process.

Next, a second plating process is performed in which the second plating solution is supplied to the gap 56 of the resist pattern 55 and the second metal layer 37 is deposited on the first metal layer 32. For example, the substrate 51 on which the first metal layer 32 is formed is caused to penetrate into a plating tank filled with a second plating solution. Thereby, as shown in FIG. 9, a second metal layer 37 can be formed on the first metal layer 32.

As long as the second metal layer 37 can be deposited on the first metal layer 32, the specific method of the second plating process is not particularly limited. For example, the second plating processing program can be implemented by a so-called electrolytic plating processing program that allows a current to flow through the first metal layer 32 to precipitate the second metal layer 37 on the first metal layer 32. Alternatively, the second plating treatment program may be an electroless plating treatment program. When the second plating process is an electroless plating process, an appropriate catalyst layer is provided on the first metal layer 32. When the electrolytic plating process is performed, a catalyst layer may be provided on the first metal layer 32.

As for the second plating solution, the same plating solution as the above-mentioned first plating solution can be used. Alternatively, a plating liquid different from the first plating liquid system may be used as the second plating liquid. When the composition of the first plating solution is the same as the composition of the second plating solution, the composition of the metal constituting the first metal layer 32 and the composition of the metal constituting the second metal layer 37 are also the same.

In addition, although FIG. 9 shows that the second plating process is continued until the upper surface of the resist pattern 55 and the upper surface of the second metal layer 37 match, it is not limited to this. The second plating process may be stopped in a state where the upper surface of the second metal layer 37 is lower than the upper surface of the resist pattern 55.

(Remove program)

Thereafter, as shown in FIG. 10, a removal procedure for removing the resist pattern 55 is performed. By using, for example, an alkali-based stripping solution, the resist pattern 55 can be removed from The substrate 51, the first metal layer 32, and the second metal layer 37 are separated.

(Separation procedure)

Next, a separation procedure for separating the combination of the first metal layer 32 and the second metal layer 37 from the substrate 51 of the pattern substrate 50 is performed. Thereby, as shown in FIG. 11A, a second metal layer including a first metal layer 32 provided with a first opening 30 in a predetermined pattern and a second metal layer 35 provided with a second opening 35 communicating with the first opening 30 can be obtained. 37 的 CVD 滤 壳 20。 37 of the vapor deposition mask 20. FIG. 11B is a plan view illustrating a case where the vapor deposition mask 20 is viewed from the side of the second surface 20b.

An example of the separation procedure will be described in detail below. First, a film provided with an adhesive substance by coating or the like is attached to a combination of the first metal layer 32 and the second metal layer 37 formed on the substrate 51. Next, the film is pulled up or rolled up to pull the film away from the substrate 51, thereby separating the combination of the first metal layer 32 and the second metal layer 37 from the substrate 51 of the pattern substrate 50. After that, the film is peeled from the combination of the first metal layer 32 and the second metal layer 37.

In addition, in the separation process, first, a gap between the combination of the first metal layer 32 and the second metal layer 37 and the substrate 51 is formed as an opening for separation, and then air is blown into the gap. To facilitate the separation process.

In addition, in the case of an adhesive substance, a substance that loses adhesiveness due to irradiation with light such as UV or heating can be used. In this case, after the combination of the first metal layer 32 and the second metal layer 37 is separated from the substrate 51, a procedure of irradiating the film with light and a procedure of heating the film are performed. Wait. Thereby, a procedure for peeling the film from the combination of the first metal layer 32 and the second metal layer 37 can be facilitated. For example, the film can be peeled off while keeping the combination of the film, the first metal layer 32 and the second metal layer 37 as parallel as possible. Thereby, the combination of the first metal layer 32 and the second metal layer 37 can be suppressed from being bent when the film is peeled off, and thereby the evaporation mask 20 can be prevented from being deformed such as being bent.

In the present embodiment, as described above, the second plating solution is supplied to the gap 56 of the resist pattern 55 and the second metal layer 37 is deposited on the first metal layer 32 to produce the vapor deposition mask 20. For this purpose, the through hole 25 of the vapor deposition mask 20 may be provided with a shape defined by the first opening portion 30 of the first metal layer 32 and a shape defined by the second opening portion 35 of the second metal layer 37. Shape sides. Therefore, the through hole 25 having a complicated shape can be precisely formed. For example, a through-hole 25 can be obtained which can increase the angle θ1 described above. Thereby, the utilization efficiency of the vapor deposition material 98 can be improved. In addition, the second metal layer 37 is formed by a plating process so that the thickness T0 of the vapor deposition mask 20 can be arbitrarily set independently of the shape of the through hole 25. For this reason, the vapor deposition mask 20 can have sufficient strength. Therefore, a high-definition organic EL display device can be manufactured, and the vapor deposition mask 20 excellent in durability can be provided.

In addition, various changes can be added to the above-mentioned embodiment. Hereinafter, the modification will be described with reference to the drawings as needed. In the following description and the drawings used in the following description, parts that can be configured in the same manner as the above-mentioned embodiment are used, and the same symbols as those used for the corresponding parts of the above-mentioned embodiment are used, and are omitted. Repeat Instructions. In addition, in the case where the effects obtained in the above-mentioned embodiment are obviously also obtained in the modified example, the description may be made.

(First Modification)

The present embodiment described above is an example of a first plating process including the first film formation process including the first metal layer 32 deposited on the conductive pattern 52 of the pattern substrate 50. That is, an example in which the first metal layer 32 is formed by a plating process is shown. However, the method is not limited to this, and the first metal layer 32 may be formed by other methods.

For example, a substrate 51 having insulation properties is prepared first, and then the first metal layer 32 is provided over the entire area of the substrate 51. As a method for forming the first metal layer 32 on the substrate 51, a physical film formation method such as sputtering, a chemical film formation method, or the like can be used as appropriate. After that, a resist pattern is formed on a portion other than the portion where the first opening portion 30 should be formed among the first metal layer 32, and then the first metal layer 32 is etched. The first metal layer 32 is patterned in such a manner that, as shown in FIG. 12, the first metal layer 32 provided with the first opening 30 in a predetermined pattern can be formed on the substrate 51. In this case, it is not necessary to form the above-mentioned conductive pattern 52 on the substrate 51.

Thereafter, the above-mentioned resist formation procedure and second plating treatment procedure are performed so that the second metal layer 37 provided with the second opening portion 35 communicating with the first opening portion 30 can be formed on the first portion as shown in FIG. 13. 1 on metal layer 32. In addition, by performing the above-mentioned removal procedure and separation procedure, as shown in FIG. 14, it is possible to obtain a first metal layer 32 provided with a first opening portion 30 according to a predetermined pattern, and The vapor deposition mask 20 of the second metal layer 37 of the second opening portion 35.

(Second Modification)

As shown in FIG. 15, the resist pattern 55 provided on the substrate 51 and the first metal layer 32 may have a so-called inverted cone shape having a shape in which the width of the resist pattern 55 becomes wider as it moves away from the substrate 51. In other words, the interval between the side surfaces 57 of the resist pattern 55 that can define the gap 56 becomes narrower as it moves away from the substrate 51. FIG. 16 is a cross-sectional view illustrating a case where the second plating solution is supplied to the gap 56 of the resist pattern 55 and the second metal layer 37 is deposited on the first metal layer 32. In addition, FIG. 17 is a cross-sectional view illustrating the vapor deposition mask 20 obtained by performing the above-mentioned removal procedure and separation procedure. As shown in FIG. 17, the second metal layer 37 of the vapor deposition mask 20 according to this modification has a shape that is tapered as it goes from the first surface 20a side to the second surface 20b side. For this reason, the angle θ1 can be effectively increased while sufficiently securing the thickness of the second metal layer 37, the volume of the second metal layer 37, and the like. For example, the opening size S1 of the through-hole 25 in the first surface 20a and the opening size S2 of the through-hole 25 in the second surface 20b can be made the same as in the case of this embodiment described above, and the first metal layer The size S0 of the through hole 25 of the connection portion 41 between the 32 and the second metal layer 37 is reduced to be smaller than that in the case of this embodiment described above.

(Other variations)

In addition, in the present embodiment described above, an example in which a plurality of effective regions 22 are allocated in the longitudinal direction of the vapor deposition mask 20 is shown. In addition, in evaporation The program shows an example in which a plurality of vapor deposition masks 20 are attached to the frame 15. However, the present invention is not limited to this. As shown in FIG. 18, a vapor deposition mask 20 having a plurality of effective regions 22 arranged in a grid pattern along both the width direction and the long side direction may be used.

(About the recessed part of the 1st surface of a vapor deposition mask)

In the embodiment and the modifications described above, the substrate 51 provided with the conductive pattern 52 having a predetermined thickness is used for the pattern substrate 50 for performing the first film formation process for forming the first metal layer 32. In addition, the first metal layer 32 is formed not only in a portion overlapping with the conductive pattern 52 but also in a portion not overlapping with the conductive pattern 52 when viewed along the normal direction of the substrate 51. Therefore, when the vapor deposition mask 20 including the first metal layer 32 and the second metal layer 37 is separated from the substrate 51 and the conductive pattern 52 of the pattern substrate 50, the vapor deposition mask composed of the first metal layer 32 is used. As shown in FIGS. 19 and 20, the first surface 20 a of the cover 20 is formed with a recessed portion 34 having a shape corresponding to the conductive pattern 52. FIG. 19 is a cross-sectional view illustrating the evaporation mask 20 showing the recessed portion 34. FIG. 20 is a cross-sectional view showing the vapor deposition mask 20 shown in FIG. 19 in an enlarged manner.

In the following description, of the first surface 20a of the vapor deposition mask 20, a portion where the recessed portion 34 is not formed is referred to as the outermost surface 20c, and a portion where the recessed portion 34 is formed is referred to as a recessed surface 20d. The boundary between the outermost surface 20 c and the recessed surface 20 d of the recessed portion 34 is referred to as an outer edge 34 e of the recessed portion 34. The outermost surface 20c is the first metal layer deposited in the first film formation process. Among 32, the surface of the first metal layer 32 is deposited in a portion that does not overlap the conductive pattern 52. In the normal direction of the vapor deposition mask 20, the distance between the outermost surface 20c and the second surface 20b is greater than the distance between the recessed surface 20d and the second surface 20b.

The depth D of the recessed portion 34 depends on the thickness of the conductive pattern 52 of the pattern substrate 50. For example, when the thickness of the conductive pattern 52 is in the range of 50 to 500 nm, the depth D of the recessed portion 34 is in the range of 50 to 500 nm. The thickness T1 of the first metal layer 32 is in the range of 0.5 to 5.0 μm as in the case of the embodiment described above.

FIG. 21 is a plan view illustrating a case where the vapor deposition mask 20 is viewed from the side of the first surface 20 a along the normal direction of the vapor deposition mask 20. In FIG. 21, hatching lines different from each other are added to the outermost surface 20 c and the recessed surface 20 d of the first surface 20 a of the vapor deposition mask 20. In addition, in FIG. 21, the end portion 38 of the second metal layer 37 formed on the second surface 20 b side of the vapor deposition mask 20 and the connection connecting the first metal layer 32 and the second metal layer 37 are indicated by dotted lines.部 41。 41. When the wall surface 36 of the second metal layer 37 is widened in parallel to the normal direction of the vapor deposition mask 20, the position of the connection portion 41 corresponds to the position of the end portion 38 of the second metal layer 37 in a plan view.

As shown in FIG. 21, the outermost surface 20 c and the outer edge 34 e of the recessed portion 34 extend along the end portion 33 of the first metal layer 32 and have a contour surrounding the closed through hole 25. The width w of the outermost surface 20c in the direction orthogonal to the contour line of the through hole 25 is equal to the width w of the portion of the first metal layer 32 shown in FIG. 7A that does not overlap the conductive pattern 52, and is 0.5, for example. In the range of ~ 5.0μm.

Preferably, as shown in FIG. 21, when the evaporation mask 20 is viewed along the normal direction of the evaporation mask 20, the outer edge 34 e of the recessed portion 34 surrounds and connects the first metal layer 32 and the second metal. Outline of the connecting portion 41 of the layer 37. In other words, the second metal layer 37 is layered on the portion of the first metal layer 32 where the recessed portion 34 is formed. The advantages of such a configuration will be described later. The distance d between the outer edge 34e of the recessed portion 34 in the planar direction of the vapor deposition mask 20 and the outline of the connection portion 41 is, for example, in the range of 1.0 to 16.5 μm.

Hereinafter, an example of the advantage of forming the recessed part 34 in the 1st surface 20a of the vapor deposition mask 20 is demonstrated. FIG. 22A is a diagram illustrating a position adjustment program for adjusting the position of the vapor deposition mask 20 in the planar direction of the organic EL substrate 92. FIG. 22B is a diagram illustrating a bonding procedure for bringing the vapor deposition mask 20 into close contact with the organic EL substrate 92.

In the position adjustment procedure, in order to prevent the vapor deposition mask 20 from coming into contact with the organic EL substrate 92 and injure the surface of the organic EL substrate 92, a predetermined interval is made between the organic EL substrate 92 and the first surface 20a of the vapor deposition mask 20. The vapor deposition mask 20 is moved in a spaced state along the plane direction of the organic EL substrate 92 to adjust the position of the vapor deposition mask 20.

In this case, the smaller the distance between the organic EL substrate 92 and the first surface 20a of the vapor deposition mask 20 is, the more accurately the relative position of the vapor deposition mask 20 relative to the organic EL substrate 92 can be detected. The position of the vapor deposition mask 20 can be precisely adjusted. On the other hand, the smaller the distance between the organic EL substrate 92 and the first surface 20a of the vapor deposition mask 20 is, the smaller the position adjustment error of the vapor deposition mask 20, the deflection of the vapor deposition mask 20, and the like make the vapor deposition. The probability that the mask 20 is in contact with the organic EL substrate 92 becomes higher.

In the present embodiment, a depression 34 is formed on the first surface 20 a of the vapor deposition mask 20. The recessed surface 20d of the recessed portion 34 is located farther from the organic EL substrate 92 than the outermost surface 20c. For this reason, the possibility that the recessed surface 20d will contact the organic EL substrate 92 is lower than the possibility that the outermost surface 20c will contact the organic EL substrate 92. Therefore, the recessed portion 34 is formed on the first surface 20a of the vapor deposition mask 20, so that even if an error occurs in the position adjustment of the vapor deposition mask 20, or the deflection of the vapor deposition mask 20, the contact with the vapor deposition mask 20 can be reduced. The area of the vapor deposition mask 20 of the organic EL substrate 92. Thereby, damage to the surface of the organic EL substrate 92 can be suppressed. For example, damage to wirings, electrodes, and the like formed in advance on the organic EL substrate 92 can be suppressed.

After the position adjustment procedure, as shown in FIG. 22B, a close-contact procedure is performed in which the vapor deposition mask 20 is brought into close contact with the organic EL substrate 92. For example, by using a magnetic force from a magnet (not shown), the vapor deposition mask 20 is brought closer to the organic EL substrate 92, and the first surface 20 a of the vapor deposition mask 20 is brought into contact with the organic EL substrate 92. Thereafter, a vapor deposition process is performed in which an organic material or the like is vapor-deposited on the organic EL substrate 92.

In addition, during the vapor deposition process, when a gap is made between the end portion 33 of the first metal layer 32 of the vapor deposition mask 20 and the organic EL substrate 92, the vapor deposition material enters the gap and adheres to the vapor deposition of the organic EL substrate 92 The shape of the plating material may be uneven. Therefore, in order to precisely control the shape of the vapor deposition material attached to the organic EL substrate 92, it is important that the end portion 33 of the first metal layer 32 of the vapor deposition mask 20 is in contact with the organic EL substrate 92. Gap The thickness of the vapor deposition mask 20 is small. For this reason, the vapor deposition mask 20 tends to have a deflection, a wave shape, or the like.

Here, according to this embodiment, a recessed portion 34 is formed on the first surface 20a of the vapor deposition mask 20, and therefore, when the vapor deposition mask 20 is brought close to the organic EL substrate 92 during the adhesion process, the most of the vapor deposition mask 20 The surface 20c is easier to contact the organic EL substrate 92 than the recessed surface 20d. In addition, an end portion 33 (the outer edge of the vapor deposition mask 20 on the first surface 20a) of the first metal layer 32 of the vapor deposition mask 20 is located on the outermost surface 20c. Therefore, the end portion 33 of the first metal layer 32 of the vapor deposition mask 20 can be more reliably brought into contact with the organic EL substrate 92.

The portion of the first metal layer 32 that does not overlap with the second metal layer 37 when seen along the normal direction of the vapor deposition mask 20 is higher than the portion of the first metal layer 32 and the second metal layer 37. The overlapping part is easily deformed. In addition, when the recessed portion 34 is formed in the first metal layer 32 of the vapor deposition mask 20, the thickness of the first metal layer 32 is only reduced to a depth D of the recessed portion 34. As a result, the first metal The layer 32 is easily deformed further. Therefore, when a force such as a magnetic force from a magnet is applied to the vapor deposition mask 20, as shown in FIG. 22C, a portion where the recessed portion 34 is formed in the first metal layer 32 and does not overlap with the second metal layer 37 should occur. A part of the recessed surface 20 d of the recessed portion 34 is deformed to contact the organic EL substrate 92. A part of the recessed surface 20d of the recessed portion 34 other than the outermost surface 20c of the vapor deposition mask 20 is in contact with the organic EL substrate 92, so that the vapor deposition mask 20 can be more closely adhered to the organic EL substrate 92.

Preferably, in the adhesion process, first, the organic EL substrate 92 is contacted with the outermost surface 20c of the evaporation mask 20, and then the mask is evaporated. The recessed surface 20 d of the recessed portion 34 of 20 is in contact with the organic EL substrate 92 so that the vapor deposition mask 20 approaches the organic EL substrate 92. Thereby, the end part 33 of the outermost surface 20c of the vapor deposition mask 20 can be reliably contacted with the organic EL substrate 92, and the vapor deposition mask 20 can be firmly adhered to the organic EL substrate 92 at the same time.

In addition, in the example shown in FIGS. 19 to 22C, the vapor deposition mask 20 also includes a first metal layer 32 having a first opening portion 30 and a second metal layer 37 having a second opening portion 35. . For this reason, as in the case of this embodiment described above, the shape of the through hole 25 can be easily realized such that the opening size S2 on the second surface 20b is larger than the opening size S1 on the first surface 20a. Accordingly, it is possible to prevent the vapor deposition material 98 moving in a direction substantially inclined with respect to the normal direction N of the vapor deposition mask 20 from adhering to the wall surface of the through hole 25. Thereby, for example, occurrence of shadows can be suppressed.

In addition, the formation of the recessed portion 34 on the first surface 20a of the vapor deposition mask 20 can reduce the area of the vapor deposition mask 20 that is in contact with the organic EL substrate 92. This effect does not depend on the layer configuration of the vapor deposition mask 20. And achieve. For example, although not shown, the vapor deposition mask 20 may be composed of only one metal layer (plating layer), and the surface of the first surface 20a of the vapor deposition mask 20 may be formed in the metal layer to form the recessed portion 34. .

(Modification of arrangement of through holes)

The present embodiment described above shows an example in which a plurality of through holes 25 are arranged in a grid shape when the vapor deposition mask 20 is viewed along the normal direction of the vapor deposition mask 20. However, the arrangement of the through holes 25 is not particularly limited. Such as For example, as shown in FIG. 23, when the vapor deposition mask 20 is viewed along the normal direction of the vapor deposition mask 20, a plurality of through holes 25 may be arranged in a staggered manner.

(Example of shape of depression)

The recessed portion 34 of the first surface 20 a of the vapor deposition mask 20 is formed corresponding to the conductive pattern 52 of the pattern substrate 50 as described above. Therefore, the shape of the recessed portion 34 depends on the shape of the conductive pattern 52. Examples of the shape of the recessed portion 34 will be described below.

First, an example of a method of manufacturing the pattern substrate 50 will be described with reference to FIGS. 24A to 24D. First, the substrate 51 is prepared. Next, as shown in FIG. 24A, a conductive layer 52 a made of a conductive material is formed on the substrate 51. The conductive layer 52a is a layer which becomes the conductive pattern 52 by patterning. As a material constituting the conductive layer 52a, a metal material having high adhesion to the resist pattern 54 described later is preferably used. For example, use of copper or a copper alloy is preferred.

Next, as shown in FIG. 24B, a resist pattern 54 having a predetermined pattern is formed on the conductive layer 52a. For example, first, a resist film is provided on the conductive layer 52a. For example, a film containing an acrylic photocurable resin called a so-called dry film is attached to the conductive layer 52a. Next, the resist film is exposed in a predetermined pattern, and thereafter, the resist film is developed to form a resist pattern 54.

Thereafter, as shown in FIG. 24C, the portion of the conductive layer 52 a that is not covered by the resist pattern 54 is removed by wet etching. Next, as shown in FIG. 24D, the resist pattern 54 is removed. By doing so, you can get There is a pattern substrate 50 having a conductive pattern 52 corresponding to a pattern of the first metal layer 32.

FIG. 25 is an enlarged cross-sectional view showing an example of the conductive pattern 52 of the pattern substrate 50 obtained when the conductive layer 52 a is patterned by wet etching. In addition, FIG. 26 is an enlarged cross-sectional view showing the vapor deposition mask 20 obtained when the first film formation process is performed using the pattern substrate 50 shown in FIG. 25.

When the etching is performed isotropically like wet etching, as shown in FIG. 25, a depression may be formed on the side surface 52 c of the conductive pattern 52. In this case, as shown in FIG. 26, the side wall 34 c of the recessed portion 34 of the first metal layer 32 of the vapor deposition mask 20 projects toward the recessed portion 34. As a result, the deformation in the normal direction of the vapor deposition mask 20 in the portion where the recessed portion 34 is formed in the first metal layer 32 should be suppressed. Therefore, it is possible to more surely prevent the recessed surface 20d of the first surface 20a of the vapor deposition mask 20 from coming into contact with the organic EL during the position adjustment process for adjusting the position of the vapor deposition mask 20 in the planar direction of the organic EL substrate 92. Substrate 92. In addition, the end portion 33 of the outermost surface 20 c of the vapor deposition mask 20 can be more reliably brought into contact with the organic EL substrate 92.

FIG. 27 is an enlarged cross-sectional view showing another example of the conductive pattern 52 of the pattern substrate 50 obtained when the conductive layer 52 a is patterned by wet etching. In addition, FIG. 28 is an enlarged cross-sectional view showing the vapor deposition mask 20 obtained when the first film formation process is performed using the pattern substrate 50 shown in FIG. 27. In the conductive pattern 52 shown in FIG. 27, the portion of the side surface 52 c that is connected to the substrate 51 is on the specific side. The portion of the surface 52c that is in contact with the resist pattern 54 is on the outer side (the side farther away from the center of the conductive pattern 52). In other words, the gentle slope portion of the conductive pattern 52 becomes wider outward. The conductive pattern 52 shown in FIG. 27 is obtained when the time for wet-etching the conductive layer 52 a is shorter than that in the case shown in FIG. 25. For example, the time for performing wet etching on the conductive layer 52a is set to a time calculated by dividing the thickness of the conductive layer 52a by the etching rate of the conductive layer 52a, a so-called appropriate amount of etching time, thereby obtaining the conductivity shown in FIG. Pattern 52.

The position of the gentle slope portion of the conductive pattern 52 shown in FIG. 27 is sensitively changed depending on the time during which the wet etching is performed. In addition, as shown in FIG. 28, when the position of the gentle slope portion of the conductive pattern 52 is shifted to the outside, the position of the end portion 33 of the first metal layer 32 of the vapor deposition mask 20 is also shifted to the outside. Therefore, in order to stably determine the position of the end portion 33 of the first metal layer 32 of the vapor deposition mask 20, as shown in FIG. 25, it is preferable to make the wet etching time longer than the appropriate amount of etching time.

On the other hand, a separation procedure for separating the vapor deposition mask 20 formed of the first metal layer 32 and the second metal layer 37 formed on the pattern substrate 50 from the pattern substrate 50 is simplified as shown in FIG. It is preferable that the conductive pattern 52 as shown in FIG. 27 has a gentle slope portion widening outward.

(Example of mold release treatment)

In order to facilitate the separation process for separating the vapor deposition mask 20 from the pattern substrate 50, the pattern substrate 50 may be subjected to a demolding process before the first film formation process is performed. Examples of the demolding process will be described below.

First, a degreasing treatment is performed to remove oil from the surface of the pattern substrate 50. For example, an oil content on the surface of the conductive pattern 52 of the pattern substrate 50 is removed using an acidic degreasing solution.

Next, an activation treatment is performed to activate the surface of the conductive pattern 52. For example, the same acidic solution as the acidic solution contained in the plating solution used in the subsequent plating treatment is brought into contact with the surface of the conductive pattern 52. For example, when the plating solution contains nickel sulfamate, the sulfamic acid is brought into contact with the surface of the conductive pattern 52.

Next, an organic film forming process is performed in which a film of an organic substance is formed on the surface of the conductive pattern 52. For example, a release agent containing an organic substance is brought into contact with the surface of the conductive pattern 52. In this case, the thickness of the organic film and the resistance of the organic film are set to such an extent that the precipitation of the first metal layer 32 caused by the thin electrolytic plating layer is not hindered by the organic film.

In addition, after the degreasing treatment, the activation treatment, and the organic film formation treatment, a water washing treatment in which the pattern substrate 50 is washed with water is performed.

In this modification, the pattern substrate 50 is subjected to a demolding process before the first film formation procedure is performed, so that a separation procedure for separating the vapor deposition mask 20 from the pattern substrate 50 can be facilitated.

In addition, although several modification examples of the above-mentioned embodiment are described, it goes without saying that a plurality of modification examples may be combined and applied as appropriate.

Claims (14)

A vapor deposition mask manufacturing method for producing a vapor deposition mask formed with a plurality of through holes, comprising: forming a first film on a substrate having an insulating property, and forming a first metal layer having a first opening in a predetermined pattern in a predetermined pattern; A procedure of forming a second metal layer provided on the first metal layer with a second metal layer connected to the second opening of the first opening; and forming the first metal layer and the second metal layer A separation process for separating the assembly from the substrate; the second film formation process includes a resist formation process for forming a resist pattern on the substrate and the first metal layer by forming a predetermined gap; and A plating treatment process for chromatography of the second metal on the first metal layer in the gap of the resist layer pattern; the resist formation process is implemented as the first opening of the first metal layer The portion is covered by the resist layer pattern, and the gap of the resist layer pattern is located on the first metal layer. For example, the method for manufacturing a vapor deposition mask according to item 1 of the patent application scope, wherein a conductive pattern having a pattern corresponding to the first metal layer is formed on the substrate, and the first film-forming procedure is included in the foregoing. The conductive pattern is subjected to a plating process of the first metal chromatography. For example, the method for manufacturing a vapor deposition mask according to item 2 of the scope of the patent application, wherein the coating process of the first film forming process includes passing a current through the conductive pattern to make the first pattern on the conductive pattern. Electrolytic plating process for metal chromatography. For example, the method for manufacturing a vapor deposition mask according to item 2 or 3 of the scope of patent application, wherein, in the first film forming process, the first metal layer is formed in a state seen along a direction normal to the substrate. Either a portion that overlaps the conductive pattern and a portion that does not overlap the conductive pattern, in the separation procedure, the first metal layer separated from the substrate and the conductive pattern is formed to have a correspondence The recessed portion in the shape of the conductive pattern. The method for manufacturing a vapor deposition mask according to any one of claims 1 to 3, wherein the aforementioned plating treatment procedure of the aforementioned second film formation procedure includes a method of causing a current to flow through the aforementioned first metal layer, thereby increasing the (1) An electroplating process for electrolyzing the second metal on the metal layer. In the method for manufacturing an evaporation mask according to any one of claims 1 to 3, the thickness of a portion of the first metal layer connected to the second metal layer is 5 μm or less. For example, the method for manufacturing a vapor deposition mask according to any one of claims 1 to 3, wherein the thickness of the second metal layer is within a range of 3 to 25 μm. A vapor deposition mask includes an effective area and a surrounding area surrounding the effective area. The effective area is formed with a plurality of through holes from a first surface to a second surface, and includes a metal layer for forming the through holes in a predetermined pattern. A portion of the through hole located on the first surface is referred to as a first opening portion. When a portion of the through hole located on the second surface is referred to as a second opening portion, the through hole is configured. When the vapor deposition mask is viewed along the normal direction of the vapor deposition mask, the contour of the second opening portion surrounds the contour of the first opening portion, and the contour of the metal layer in the effective region The first surface is formed with a depressed portion. For example, in the vapor deposition mask according to item 8 of the scope of patent application, the width of a portion of the first surface where the recessed portion is not formed is in a range of 0.5 to 5.0 μm. For example, the vapor deposition mask according to item 8 or 9 of the patent application scope, wherein the metal layer includes: a first metal layer formed with the first opening portion and the recessed portion; and the first metal layer laminated on the first metal layer, The second metal layer of the second opening is formed. For example, in the vapor deposition mask of the tenth aspect of the application for a patent, in the case where the vapor deposition mask is viewed along the normal direction of the vapor deposition mask, the depression formed in the first metal layer is An outline surrounding a connection portion connecting the first metal layer and the second metal layer. For example, the thickness of a portion of the first metal layer connected to the second metal layer in the vapor deposition mask according to item 10 of the patent application range is 5 μm or less. For example, the vapor deposition mask according to item 10 of the patent application range, wherein the thickness of the second metal layer is within a range of 3 to 25 μm. For example, the vapor deposition mask of item 8 or 9 of the patent application scope, wherein the aforementioned metal layer is a plating layer.