JP7500946B2 - Method for manufacturing deposition mask - Google Patents

Description

This disclosure relates to a deposition mask manufacturing method and a deposition mask.

As a display device for use in portable devices such as smartphones and tablet PCs, organic EL display devices, which have good responsiveness, low power consumption, and high contrast, are attracting attention. A method for forming pixels in such organic EL display devices is known in which a deposition mask containing through-holes arranged in a desired pattern is used to form pixels in the desired pattern. Specifically, first, a substrate for the organic EL display device (organic EL substrate) is placed in a deposition device, and then a deposition process is performed in which a deposition mask is brought into close contact with the organic EL substrate in the deposition device and an organic material is deposited on the organic EL substrate.

Patent Document 1 discloses a mask sheet having a film layer and a metal layer.

JP 2017-179591 A

When adhering the deposition mask to the substrate to be deposited, such as an organic EL substrate, a magnet may be placed on the substrate opposite the deposition mask, and the deposition mask may be attracted to the magnet by the magnetic force of the magnet, adhering the deposition mask to the substrate to be deposited. When using a deposition mask having a resin layer and a metal layer, the deposition process is performed by placing the deposition mask so that the resin layer is located on the substrate to be deposited. In conventional technology, even when the deposition process is performed using a deposition mask having a resin layer and a metal layer, high adhesion of the deposition mask to the substrate to be deposited is required.

The present disclosure has been made in consideration of these points, and aims to provide a deposition mask and a method for manufacturing the deposition mask that can exhibit high adhesion to the substrate on which the deposition is to be performed.

A first aspect of the present disclosure is a method for manufacturing a semiconductor device comprising:
Providing a resin layer and a metal layer including an iron-nickel based alloy disposed on the resin layer;
Etching the metal layer to form a first hole in the metal layer;
and forming second holes in the resin layer, the second holes communicating with the first holes, using the metal layer as a mask.

A second aspect of the present disclosure is a method for manufacturing a semiconductor device comprising:
In the method for producing a deposition mask according to the first aspect, the second hole is formed by irradiation with laser light.

A third aspect of the present disclosure is a method for manufacturing a semiconductor device comprising:
Before the step of forming the first hole,
providing a support substrate having a first surface and a second surface opposite the first surface;
The method for manufacturing a deposition mask of the first or second aspect further comprises a step of arranging the resin layer and the metal layer on the first surface side of the support substrate so that the resin layer is located between the support substrate and the metal layer.

A fourth aspect of the present disclosure is a method for manufacturing a semiconductor device comprising:
forming a resist layer on the second surface of the support substrate, the resist layer having an opening that at least partially overlaps with the second hole in a plan view;
Etching the support substrate through the opening to form a third hole in the support substrate communicating with the second hole;
and removing the resist layer.

A fifth aspect of the present disclosure is a method for manufacturing a semiconductor device comprising:
The method for manufacturing a deposition mask according to a third aspect, further comprising the step of peeling off the metal layer and the resin layer from the support substrate after the step of forming the second holes.

A sixth aspect of the present disclosure is a method for manufacturing a semiconductor device comprising:
A deposition mask having a first surface and a second surface opposite to the first surface,
a metal layer including an iron-nickel based alloy and having a first hole;
a resin layer located on the second surface side of the metal layer and having a second hole communicating with the first hole,
The size of the second hole in the surface direction of the resin layer changes so as to become larger with increasing distance from the metal layer.

A seventh aspect of the present disclosure is a method for manufacturing a semiconductor device comprising:
In the deposition mask of a sixth aspect, a dimension of the second hole on the second surface side is larger than a dimension of the first hole on the first surface side.

Embodiments of the present disclosure can provide a deposition mask manufacturing method and a deposition mask that can exhibit high adhesion to the substrate on which the deposition is to be performed.

FIG. 1 is a diagram for explaining one embodiment of the present disclosure, and is a diagram for explaining a deposition apparatus having a deposition mask device. FIG. 2 is a cross-sectional view showing an example of an organic EL display device manufactured by the vapor deposition apparatus shown in FIG. FIG. 3 is a plan view that illustrates an example of a deposition mask device having a deposition mask. FIG. 4 is a partially enlarged view of the deposition mask, specifically, a plan view showing an enlarged area surrounded by a dashed line marked IV in FIG. FIG. 5 is a cross-sectional view taken along line VV in FIG. FIG. 6 is an enlarged view of one through-hole of the deposition mask of FIG. FIG. 7 is a diagram showing a process of an example of a method for manufacturing a deposition mask. FIG. 8 is a diagram showing a process of an example of a method for manufacturing a deposition mask. FIG. 9 is a diagram showing a process of an example of a method for manufacturing a deposition mask. FIG. 10 is a diagram showing a process of an example of a method for manufacturing a deposition mask. FIG. 11 is a diagram for explaining an example of a method for forming the second holes in the deposition mask. FIG. 12 is a diagram showing a process of an example of a method for manufacturing a deposition mask. FIG. 13 is a diagram showing a process of an example of a method for manufacturing a deposition mask. FIG. 14 is a diagram showing a modified example of the deposition mask.

In this specification and drawings, unless otherwise specified, the terms "plate," "sheet," "film," and the like are not distinguished from each other solely on the basis of the difference in designation. For example, "plate" is a concept that includes members that can be called sheets and films. Furthermore, "surface (sheet surface, film surface)" refers to a surface that coincides with the planar direction of the target plate-like (sheet-like, film-like) member when the target plate-like (sheet-like, film-like) member is viewed overall and in a global perspective. Furthermore, the normal direction used for a plate-like (sheet-like, film-like) member refers to the normal direction to the surface (sheet surface, film surface) of the member. Furthermore, terms such as "parallel" and "orthogonal," and values of length and angle, which specify the shape and geometric conditions and their degree, as used in this specification, are interpreted to include the range in which similar functions can be expected without being bound by strict meanings.

Unless otherwise specified, in this specification and drawings, terms that specify shapes, geometric conditions, and the extent of those conditions, such as "parallel" and "orthogonal," and values of lengths and angles, are to be interpreted without being bound by strict meanings, but rather to include the range within which similar functions can be expected.

In this specification and drawings, when a certain configuration such as a certain member or region is described as being "above (or below)", "above (or below)" or "above (or below)" another configuration such as another member or region, unless otherwise specified, this is to be interpreted as including not only the case where a certain configuration is in direct contact with the other configuration, but also the case where another configuration is included between the certain configuration and the other configuration. Furthermore, unless otherwise specified, the words "above" (or "upper side" or "upper") or "below" (or "lower side" or "lower") may be used in the description, but the up-down direction may be reversed.

In this specification and drawings, unless otherwise specified, identical parts or parts having similar functions are given the same or similar symbols, and repeated explanations may be omitted. In addition, the dimensional ratios of the drawings may differ from the actual ratios for the convenience of explanation, and some components may be omitted from the drawings.

Unless otherwise specified in this specification and drawings, the present invention may be combined with other embodiments and modified examples to the extent that no contradictions arise. In addition, other embodiments may be combined with each other, or other embodiments may be combined with modified examples to the extent that no contradictions arise. In addition, modified examples may be combined with each other to the extent that no contradictions arise.

Unless otherwise specified in this specification and drawings, when multiple steps are disclosed in a method such as a manufacturing method, other steps that are not disclosed may be performed between the disclosed steps. In addition, the order of the disclosed steps is arbitrary to the extent that no contradiction occurs.

In this specification and drawings, unless otherwise specified, a numerical range expressed by the symbol "to" includes the numerical values before and after the symbol. For example, the numerical range defined by the expression "34 to 38% by mass" is the same as the numerical range defined by the expression "34% by mass or more and 38% by mass or less."

In one embodiment of this specification, an example is described that relates to a deposition mask used to pattern an organic material in a desired pattern on a substrate when manufacturing an organic EL display device, and a method for manufacturing the same. However, this embodiment is not limited to such applications, and can be applied to deposition masks used for various purposes.

One embodiment of the present disclosure will be described in detail below with reference to the drawings. Note that the embodiment described below is an example of an embodiment of the present disclosure, and the present disclosure should not be interpreted as being limited to only these embodiments.

A first aspect of the present disclosure is a method for manufacturing a deposition mask, comprising the steps of preparing a resin layer and a metal layer containing an iron-nickel alloy disposed on the resin layer, etching the metal layer to form a first hole in the metal layer, and using the metal layer as a mask to form a second hole in the resin layer that communicates with the first hole.

A second aspect of the present disclosure is the first aspect described above, in which the second hole may be formed by irradiating a laser beam.

A third aspect of the present disclosure may further include, in each of the first aspect or the second aspect described above, a step of preparing a support substrate having a first surface and a second surface opposite to the first surface, prior to the step of forming the first hole, and a step of arranging the resin layer and the metal layer on the first surface side of the support substrate such that the resin layer is located between the support substrate and the metal layer.

A fourth aspect of the present disclosure may further include, in the third aspect described above, a step of forming a resist layer on the second surface of the support substrate, the resist layer having an opening that at least partially overlaps with the second hole in a plan view, a step of etching the support substrate through the opening to form a third hole in the support substrate that communicates with the second hole, and a step of removing the resist layer.

A fifth aspect of the present disclosure may further include, in the third aspect described above, a step of peeling off the metal layer and the resin layer from the support substrate after the step of forming the second hole.

A sixth aspect of the present disclosure is a deposition mask having a first surface and a second surface opposite to the first surface, the deposition mask comprising a metal layer containing an iron-nickel alloy and having a first hole, and a resin layer located on the second surface side of the metal layer and having a second hole communicating with the first hole, the size of the second hole in the surface direction of the resin layer changing to become larger with increasing distance from the metal layer.

A seventh aspect of the present disclosure is the sixth aspect described above, in which the dimension of the second hole on the second surface side may be greater than the dimension of the first hole on the first surface side.

A deposition apparatus 90 equipped with a deposition mask 20 will be described with reference to FIG. 1. FIG. 1 is a diagram showing the deposition apparatus 90. The deposition apparatus 90 performs a deposition process in which a deposition material 98 is deposited on an object. For example, the deposition apparatus 90 may deposit an organic material in a desired pattern on a substrate when manufacturing an organic EL display device 100.

The deposition device 90 may include therein a deposition source (e.g., a crucible 94), a heater 96, and a deposition mask device 10. The deposition device 90 may further include an exhaust means (not shown) for creating a vacuum atmosphere inside the deposition device 90. The crucible 94 may contain a deposition material 98 such as an organic light-emitting material. The heater 96 may heat the crucible 94 to evaporate the deposition material 98 under a vacuum atmosphere. The deposition mask device 10 may be disposed to face the crucible 94.

The deposition mask device 10 may include a frame 15 and a deposition mask 20 attached to the frame 15. The frame 15 may support the deposition mask 20 in a state where tension is applied (pulled in the surface direction) in the surface direction (direction along the plane of the deposition mask 20) so that the deposition mask 20 does not bend. As shown in FIG. 1, the deposition mask device 10 may be disposed in a deposition device 90 so that the deposition mask 20 faces a deposition substrate (e.g., an organic EL substrate) 92, which is an object to which the deposition material 98 is to be attached. In the following description, the surface of the deposition mask 20 on the organic EL substrate 92 side is referred to as a first surface 20a, and the surface located opposite the first surface 20a is referred to as a second surface 20b.

As shown in FIG. 1, the deposition mask device 10 may include a magnet 93 arranged on the surface of the organic EL substrate 92 opposite the deposition mask 20. By providing the magnet 93, the deposition mask 20 can be attracted to the magnet 93 by magnetic force, and the deposition mask 20 can be closely attached to the organic EL substrate 92. Alternatively, the deposition mask 20 may be closely attached to the organic EL substrate 92 using an electrostatic chuck that utilizes electrostatic force (Coulomb force).

2 is a cross-sectional view showing an organic EL display device 100 manufactured using the deposition apparatus 90 of FIG. 1. The organic EL display device 100 may include a deposition substrate (organic EL substrate) 92 and pixels including a deposition material 98 arranged in a pattern. In the organic EL display device 100 of FIG. 2, electrodes for applying a voltage to the pixels including the deposition material 98 are omitted. After the deposition process of providing the deposition material 98 in a pattern on the organic EL substrate 92, other components of the organic EL display device may be further provided on the organic EL display device 100 of FIG. 2. Therefore, the organic EL display device 100 of FIG. 2 can also be called an intermediate of an organic EL display device.

Figure 3 is a plan view that shows an example of a deposition mask device 10 having a deposition mask 20, and is a view showing the deposition mask device 10 as seen from the second surface 20b side of the deposition mask 20. Figure 4 is a partially enlarged view of the deposition mask 20, and is a plan view showing an enlarged area surrounded by a dashed line marked IV in Figure 3. In the illustrated example, the deposition mask device 10 may include a frame 15 having a rectangular outline and a deposition mask 20 attached to the frame 15. The deposition mask 20 may include a metal plate in which a plurality of through holes 25 that penetrate the deposition mask 20 are formed.

In the illustrated example, the deposition mask 20 may have a quadrangular outline in plan view, or more precisely, a rectangular outline in plan view. The deposition mask 20 may include an effective area 22 in which through holes 25 are formed in a regular arrangement, and a peripheral area 23 surrounding the effective area 22. The deposition mask 20 may have a plurality of effective areas 22, and the plurality of effective areas 22 may be arranged at a predetermined pitch along two directions perpendicular to each other. In the illustrated example, one effective area 22 may correspond to one organic EL display device. That is, the illustrated deposition mask device 10 may enable multi-sided deposition on a deposition target substrate. The peripheral portion of the deposition mask 20 may be attached to the frame 15 by, for example, spot welding.

In the effective area 22, a plurality of through holes 25 intended to pass the deposition material 98 (e.g., an organic light-emitting material) when the deposition material 98 is deposited on a deposition target substrate (e.g., an organic EL substrate 92) that is a deposition target may be formed in a desired pattern. As shown in FIG. 1, the deposition mask device 10 may be used for depositing the deposition material 98 on the deposition target substrate, with the deposition mask 20 supported in the deposition device 90 so that the first surface 20a of the deposition mask 20 faces the lower surface of the deposition target substrate. In the example shown in FIG. 1, the deposition material 98 that has evaporated from the crucible 94 and reached the deposition mask device 10 may adhere to the organic EL substrate 92 through the through holes 25 of the deposition mask 20. This allows the deposition material 98 to be formed on the surface of the organic EL substrate 92 in a desired pattern corresponding to the positions of the through holes 25 of the deposition mask 20.

When a color display using multiple colors is desired, a deposition apparatus 90 equipped with a deposition mask 20 corresponding to each color may be prepared, and the organic EL substrate 92 may be loaded into each deposition apparatus 90 in turn. This allows, for example, a red organic light-emitting material, a green organic light-emitting material, and a blue organic light-emitting material to be deposited in turn onto the organic EL substrate 92.

Figure 5 is a cross-sectional view corresponding to line V-V in Figure 4, and shows an enlarged view of one through-hole 25 in the deposition mask 20 shown in Figure 5.

5 and 6, the deposition mask 20 may include a metal layer 31 having first holes 33 arranged in a predetermined pattern, and a resin layer 35 having second holes 37 that communicate with the first holes 33. The resin layer 35 may be disposed closer to the second surface 20b of the deposition mask 20 than the metal layer 31. The metal layer 31 may have a first surface 31a located on the opposite side to the resin layer 35, and a second surface 31b located on the resin layer 35 side. In addition, the first surface 31a of the metal layer 31 may constitute the first surface 20a of the deposition mask 20, and at least a portion of the second surface 31b of the resin layer 35 may constitute at least a portion of the second surface 20b of the deposition mask 20.

The deposition mask 20 may further have a support substrate 41 located on the opposite side of the resin layer 35 to the metal layer 31. The support substrate 41 may be a layer (rolled metal layer) made of a rolled metal plate. The support substrate 41 functions as a member supporting the metal layer 31 and the resin layer 35. As shown in FIG. 5, the support substrate 41 may have a first surface 41a facing the resin layer 35 side and a second surface 41b facing the opposite side to the first surface 41a. In this case, the second surface 41b of the support substrate 41 may form a part of the second surface 20b of the deposition mask 20.

The thickness of the support substrate 41 may be, for example, 15 μm or more, 20 μm or more, 25 μm or more, or 30 μm or more. The thickness of the support substrate 41 may be, for example, 40 μm or less, 50 μm or less, 70 μm or less, or 100 μm or less. The thickness range of the support substrate 41 may be determined by a first group consisting of 15 μm, 20 μm, 25 μm, and 30 μm, and/or a second group consisting of 40 μm, 50 μm, 70 μm, and 100 μm. The thickness range of the support substrate 41 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The thickness range of the support substrate 41 may be determined by a combination of any two of the values included in the first group described above. The thickness range of the support substrate 41 may be determined by a combination of any two of the values included in the second group described above. For example, it may be 15 μm or more and 100 μm or less, 15 μm or more and 70 μm or less, 15 μm or more and 50 μm or less, 15 μm or more and 40 μm or less, 15 μm or more and 30 μm or less, 15 μm or more and 25 μm or less, 15 μm or more and 20 μm or less, 20 μm or more and 100 μm or less, 20 μm or more and 70 μm or less, 20 μm or more and 50 μm or less, 20 μm or more and 40 μm or less, 20 μm or more and 30 μm or less, 20 μm or more and 25 μm or less, or 25 μm or more and 100 μm or less. , may be 25 μm or more and 70 μm or less, may be 25 μm or more and 50 μm or less, may be 25 μm or more and 40 μm or less, may be 25 μm or more and 30 μm or less, may be 30 μm or more and 100 μm or less, may be 30 μm or more and 70 μm or less, may be 30 μm or more and 50 μm or less, may be 30 μm or more and 40 μm or less, may be 40 μm or more and 100 μm or less, may be 40 μm or more and 70 μm or less, may be 40 μm or more and 50 μm or less, may be 50 μm or more and 100 μm or less, may be 50 μm or more and 70 μm or less, may be 70 μm or more and 100 μm or less.

The support substrate 41 may have a third hole 43 penetrating the support substrate 41 in the thickness direction (normal direction). The third hole 43 may be formed as a through hole connecting the first surface 41a and the second surface 41b of the support substrate 41. The third hole 43 may be provided corresponding to each effective area 22 of the deposition mask 20. That is, the support substrate 41 may have one third hole 43 corresponding to one effective area 22 of the deposition mask 20. As shown in FIG. 4, the third hole 43 may have a rectangular outline in a plan view. However, without being limited thereto, the outline of the third hole 43 may have other shapes such as a polygon such as a triangle, a pentagon, a hexagon, or an octagon, or a circle or an ellipse in a plan view. In this specification, the terms "square", "pentagon", "hexagon", "octagon" and "polygon" are intended to include shapes in which the corners of the square, pentagon, hexagon, octagon and polygon are rounded or cut off.

In this embodiment, a support substrate 41 may be disposed between two adjacent effective areas 22. This ensures sufficient strength for the deposition mask 20. That is, the support substrate 41 disposed between two adjacent effective areas 22 supports the metal layer 31 and the resin layer 35, and therefore can prevent the metal layer 31 and the resin layer 35 from bending due to the action of gravity or from deforming due to the action of an external force.

The metal layer 31 may be a layer that is attracted toward the deposition substrate 92 by a magnet 93 that may be placed on the side of the deposition substrate 92 opposite the deposition mask 20 during the deposition process. Therefore, it is preferable that the metal layer 31 contains a material that has the property of being attracted by the magnet 93.

The deposition process may be performed inside a deposition apparatus 90 that is in a high-temperature atmosphere. In this case, the deposition mask 20 and the deposition substrate 92 held inside the deposition apparatus 90 are also heated during the deposition process. At this time, the deposition mask 20 and the deposition substrate 92 exhibit dimensional change behavior based on their respective thermal expansion coefficients. Therefore, the thermal expansion coefficient of the members that make up the deposition mask 20 may be equal to the thermal expansion coefficient of the deposition substrate 92.

For example, when a glass substrate is used as the deposition substrate 92, an iron alloy containing nickel, i.e., an iron-nickel alloy, may be used as the main metal material of the frame 15 and the deposition mask 20. In particular, the metal layer 31 and the support substrate 41 of the deposition mask 20 may contain an iron-nickel alloy. The iron-nickel alloy may further contain other components such as cobalt. For example, an iron alloy containing nickel and cobalt in total of 30% by mass or more and 54% by mass or less and a cobalt content of 0% by mass or more and 6% by mass or less may be used as the material of the frame 15, the metal layer 31, and the support substrate 41. Specific examples of iron alloys containing nickel or nickel and cobalt include an Invar material containing 34% by mass or more and 38% by mass or less of nickel, a Super Invar material containing 30% by mass or more and 34% by mass or less of nickel and further containing cobalt, and a low thermal expansion Fe-Ni alloy containing 38% by mass or more and 54% by mass or less of nickel.

Since the metal layer 31 contains an iron-nickel alloy, the metal layer 31 has the property of being attracted by the magnet 93. As a result, the metal layer 31 is attracted by the magnet 93 toward the deposition substrate 92 during the deposition process. Therefore, the adhesion of the deposition mask 20 to the deposition substrate 92 during the deposition process can be improved.

In addition, since the frame 15, the metal layer 31, and the support substrate 41 contain an iron-nickel alloy, the difference between the thermal expansion coefficient of the deposition mask 20 and the thermal expansion coefficient of the deposition substrate 92 can be reduced. In this case, the dimensional change between the deposition mask 20 and the deposition substrate 92 can be reduced. Therefore, the dimensional accuracy and positional accuracy of the deposition material 98 attached to the deposition substrate 92 can be effectively improved.

The metal layer 31 may be formed on the resin layer 35 by a plating method such as electrolytic plating or electroless plating, a physical vapor deposition method, a sputtering method, a CVD method, or the like. The metal layer 31 may also be formed from a rolled metal plate. When the metal layer 31 is formed from a metal plate, the thickness of the metal layer 31 may be adjusted by polishing the metal plate.

The thickness of the metal layer 31 may be, for example, 0.3 μm or more, 0.5 μm or more, 0.8 μm or more, or 1.0 μm or more. The thickness of the metal layer 31 may be, for example, 2.0 μm or less, 3.0 μm or less, 4.0 μm or less, or 5.0 μm or less. The thickness range of the metal layer 31 may be determined by a first group consisting of 0.3 μm, 0.5 μm, 0.8 μm, and 1.0 μm, and/or a second group consisting of 2.0 μm, 3.0 μm, 4.0 μm, and 5.0 μm. The thickness range of the metal layer 31 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The thickness range of the metal layer 31 may be determined by a combination of any two of the values included in the first group described above. The range of thickness of the metal layer 31 may be determined by a combination of any two of the values included in the second group described above. For example, the range may be 0.3 μm or more and 5.0 μm or less, 0.3 μm or more and 4.0 μm or less, 0.3 μm or more and 3.0 μm or less, 0.3 μm or more and 2.0 μm or less, 0.3 μm or more and 1.0 μm or less, 0.3 μm or more and 0.8 μm or less, 0.3 μm or more and 0.5 μm or less, 0.5 μm or more and 5.0 μm or less, 0.5 μm or more and 4.0 μm or less, 0.5 μm or more and 3.0 μm or less, 0.5 μm or more and 2.0 μm or less, 0.5 μm or more and 1.0 μm or less, 0.5 μm or more and 0.8 μm or less, or 0.8 μm or more and 5.0 μm or less. Alternatively, it may be 0.8 μm or more and 4.0 μm or less, 0.8 μm or more and 3.0 μm or less, 0.8 μm or more and 2.0 μm or less, 0.8 μm or more and 1.0 μm or less, 1.0 μm or more and 5.0 μm or less, 1.0 μm or more and 4.0 μm or less, 1.0 μm or more and 3.0 μm or less, 1.0 μm or more and 2.0 μm or less, 2.0 μm or more and 5.0 μm or less, 2.0 μm or more and 4.0 μm or less, 2.0 μm or more and 3.0 μm or less, 3.0 μm or more and 5.0 μm or less, 3.0 μm or more and 4.0 μm or less, or 4.0 μm or more and 5.0 μm or less.

The resin layer 35 functions as a member supporting the metal layer 31. The resin layer 35 may contain, for example, polyimide, PE (polyethylene), PET (polyethylene terephthalate), TAC (triacetyl cellulose), PVA (polyvinyl alcohol), PA (polyamide), fluorinated PI (fluorinated polyimide) or ETFE (tetrafluoroethylene-ethylene copolymer resin) or other fluororesin, PMMA (polymethyl methacrylate), ABS (acrylonitrile butadiene styrene), PC (polycarbonate), or other resin. In particular, from the viewpoint of ensuring sufficient strength, it is preferable to use polyimide as a material constituting the resin layer 35. The resin layer 35 may be formed by applying a resin having fluidity on the metal layer 31 and then curing the resin. The resin layer 35 may also be formed as a sheet or film. As an example, when polyimide is used as a material constituting the resin layer 35, the resin layer 35 may be formed by applying a solution of a polyimide precursor on the metal layer 31 and heating the polyimide precursor to imidize it.

The thickness of the resin layer 35 may be, for example, 5 μm or more, 8 μm or more, 10 μm or more, or 15 μm or more. The thickness of the resin layer 35 may be, for example, 20 μm or less, 30 μm or less, 40 μm or less, or 50 μm or less. The range of the thickness of the resin layer 35 may be determined by a first group consisting of 5 μm, 8 μm, 10 μm, and 15 μm, and/or a second group consisting of 20 μm, 30 μm, 40 μm, and 50 μm. The range of the thickness of the resin layer 35 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the thickness of the resin layer 35 may be determined by a combination of any two of the values included in the first group described above. The range of the thickness of the resin layer 35 may be determined by a combination of any two of the values included in the second group described above. For example, it may be 5 μm or more and 50 μm or less, 5 μm or more and 40 μm or less, 5 μm or more and 30 μm or less, 5 μm or more and 20 μm or less, 5 μm or more and 15 μm or less, 5 μm or more and 10 μm or less, 5 μm or more and 8 μm or less, 8 μm or more and 50 μm or less, 8 μm or more and 40 μm or less, 8 μm or more and 30 μm or less, 8 μm or more and 20 μm or less, 8 μm or more and 15 μm or less, 8 μm or more and 10 μm or less, 10 μm or more and 50 μm or less, or 10 μm or less. It may be 40 μm or less, 10 μm or more and 30 μm or less, 10 μm or more and 20 μm or less, 10 μm or more and 15 μm or less, 15 μm or more and 50 μm or less, 15 μm or more and 40 μm or less, 15 μm or more and 30 μm or less, 15 μm or more and 20 μm or less, 20 μm or more and 50 μm or less, 20 μm or more and 40 μm or less, 20 μm or more and 30 μm or less, 30 μm or more and 50 μm or less, 30 μm or more and 40 μm or less, or 40 μm or more and 50 μm or less.

The total thickness of the metal layer 31 and the resin layer 35 may be, for example, 5.3 μm or more, 8 μm or more, 10 μm or more, or 15 μm or more. The total thickness of the metal layer 31 and the resin layer 35 may be, for example, 20 μm or less, 30 μm or less, 40 μm or less, or 55 μm or less. The range of the total thickness of the metal layer 31 and the resin layer 35 may be determined by a first group consisting of 5.3 μm, 8 μm, 10 μm, and 15 μm, and/or a second group consisting of 20 μm, 30 μm, 40 μm, and 55 μm. The range of the total thickness of the metal layer 31 and the resin layer 35 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the total thickness of the metal layer 31 and the resin layer 35 may be determined by a combination of any two of the values included in the first group described above. The range of the total thickness of the metal layer 31 and the resin layer 35 may be determined by a combination of any two of the values included in the second group described above. For example, it may be 5.3 μm or more and 55 μm or less, 5.3 μm or more and 40 μm or less, 5.3 μm or more and 30 μm or less, 5.3 μm or more and 20 μm or less, 5.3 μm or more and 15 μm or less, 5.3 μm or more and 10 μm or less, 5.3 μm or more and 8 μm or less, 8 μm or more and 55 μm or less, 8 μm or more and 40 μm or less, 8 μm or more and 30 μm or less, 8 μm or more and 20 μm or less, 8 μm or more and 15 μm or less, 8 μm or more and 10 μm or less, or 10 μm or more and 55 μm or less. Alternatively, it may be 10 μm or more and 40 μm or less, 10 μm or more and 30 μm or less, 10 μm or more and 20 μm or less, 10 μm or more and 15 μm or less, 15 μm or more and 55 μm or less, 15 μm or more and 40 μm or less, 15 μm or more and 30 μm or less, 15 μm or more and 20 μm or less, 20 μm or more and 55 μm or less, 20 μm or more and 40 μm or less, 20 μm or more and 30 μm or less, 30 μm or more and 55 μm or less, 30 μm or more and 40 μm or less, or 40 μm or more and 55 μm or less.

In the deposition mask 20 of this embodiment, the through hole 25 penetrating the deposition mask 20 may be configured by the first hole 33 and the second hole 37 that are connected to each other. In this case, the size and opening shape of the through hole 25 on the first surface 20a side of the deposition mask 20 are determined by the first hole 33 of the metal layer 31. On the other hand, the size and opening shape of the through hole 25 on the second surface 20b side of the deposition mask 20 are determined by the second hole 37 of the resin layer 35. In other words, the through hole 25 is given both a shape determined by the first hole 33 of the metal layer 31 and a shape determined by the second hole 37 of the resin layer 35.

3 and 4, the first hole 33 and the second hole 37 constituting the through hole 25 may have a polygonal outline in a plan view. Here, an example is shown in which the first hole 33 and the second hole 37 have a quadrangular outline. The first hole 33 and the second hole 37 may also have other polygonal outlines, such as a hexagon or an octagon. The first hole 33 and the second hole 37 may have a circular, elliptical, or other outline in a plan view. Another layer may be interposed between the metal layer 31 and the resin layer 35. For example, a catalyst layer for promoting the deposition of the metal layer 31 on the resin layer 35 may be provided between the metal layer 31 and the resin layer 35.

4, the through holes 25 formed in each effective area 22 may be arranged at a predetermined pitch along two mutually orthogonal directions in the effective area 22. The arrangement pitch of the through holes 25 may be, for example, 6 μm or more, 10 μm or more, 14 μm or more, or 18 μm or more. The arrangement pitch of the through holes 25 may be, for example, 20 μm or less, 30 μm or less, 40 μm or less, or 50 μm or less. The range of the arrangement pitch of the through holes 25 may be determined by a first group consisting of 6 μm, 10 μm, 14 μm, and 18 μm, and/or a second group consisting of 20 μm, 30 μm, 40 μm, and 50 μm. The range of the arrangement pitch of the through holes 25 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the arrangement pitch of the through holes 25 may be determined by a combination of any two of the values included in the first group described above. The range of the arrangement pitch of the through holes 25 may be determined by a combination of any two of the values included in the second group described above. For example, it may be 6 μm or more and 50 μm or less, 6 μm or more and 40 μm or less, 6 μm or more and 30 μm or less, 6 μm or more and 20 μm or less, 6 μm or more and 18 μm or less, 6 μm or more and 14 μm or less, 6 μm or more and 10 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 40 μm or less, 10 μm or more and 30 μm or less, 10 μm or more and 20 μm or less, 10 μm or more and 18 μm or less, 10 μm or more and 14 μm or less, 14 μm or more and 50 μm or less, 14 μm or more and 14 μm or less. It may be 14 μm or more and 40 μm or less, 14 μm or more and 30 μm or less, 14 μm or more and 20 μm or less, 14 μm or more and 18 μm or less, 18 μm or more and 50 μm or less, 18 μm or more and 40 μm or less, 18 μm or more and 30 μm or less, 18 μm or more and 20 μm or less, 20 μm or more and 50 μm or less, 20 μm or more and 40 μm or less, 20 μm or more and 30 μm or less, 30 μm or more and 50 μm or less, 30 μm or more and 40 μm or less, or 40 μm or more and 50 μm or less.

As shown in Fig. 6, the dimension _S2 of the through hole 25 (second hole 37) in the second surface 20b is larger than the dimension _S1 of the through hole 25 (first hole 33) in the first surface 20a. In Fig. 6, the symbol _S0 represents the dimension of the through hole 25 at the connection portion between the metal layer 31 and the resin layer 35. The dimension of the metal layer 31 on the second surface 20b side and the dimension of the resin layer 35 on the first surface 20a side may be equal to each other. That is, the dimension of the metal layer 31 on the second surface 20b side and the dimension of the resin layer 35 on the first surface 20a side may both be _S0 .

Since the through-hole 25 has such dimensions S ₁ and S ₂ , the deposition material 98 moving along a direction inclined with respect to the normal direction of the deposition mask 20 can be sufficiently adhered to the deposition substrate 92. Therefore, in the deposition substrate 92 such as an organic EL substrate, it is possible to provide high luminance to the light emitted from the organic light-emitting material formed from the deposition material 98 adhered to the deposition substrate 92. This also makes it possible to uniformize the luminance of the light emitted from the deposition substrate 92.

The above-mentioned dimensions S ₀ , S ₁ , and S ₂ are appropriately set in consideration of the pixel density of the organic EL display device, the desired value of the above-mentioned angle θ1, and the like.

The dimension S ₀ of the through hole 25 at the connection portion between the metal layer 31 and the resin layer 35 may be, for example, 5 μm or more, 8 μm or more, 10 μm or more, or 15 μm or more. The dimension S ₀ may be, for example, 20 μm or less, 25 μm or less, 30 μm or less, or 40 μm or less. The range of the dimension S ₀ may be determined by a first group consisting of 5 μm, 8 μm, 10 μm, and 15 μm, and/or a second group consisting of 20 μm, 25 μm, 30 μm, and 40 μm. The range of the dimension S ₀ may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the dimension S ₀ may be determined by a combination of any two of the values included in the first group described above. The range of the dimension S ₀ may be determined by a combination of any two of the values included in the second group described above. For example, it may be 5 μm or more and 40 μm or less, 5 μm or more and 30 μm or less, 5 μm or more and 25 μm or less, 5 μm or more and 20 μm or less, 5 μm or more and 15 μm or less, 5 μm or more and 10 μm or less, 5 μm or more and 8 μm or less, 8 μm or more and 40 μm or less, 8 μm or more and 30 μm or less, 8 μm or more and 25 μm or less, 8 μm or more and 20 μm or less, 8 μm or more and 15 μm or less, 8 μm or more and 10 μm or less, 10 μm or more and 40 μm or less, or 10 μm or less. It may be 30 μm or less, 10 μm or more and 25 μm or less, 10 μm or more and 20 μm or less, 10 μm or more and 15 μm or less, 15 μm or more and 40 μm or less, 15 μm or more and 30 μm or less, 15 μm or more and 25 μm or less, 15 μm or more and 20 μm or less, 20 μm or more and 40 μm or less, 20 μm or more and 30 μm or less, 20 μm or more and 25 μm or less, 25 μm or more and 40 μm or less, 25 μm or more and 30 μm or less, or 30 μm or more and 40 μm or less.

The dimension S ₁ of the through hole 25 (first hole 33) in the first surface 20a may be, for example, 5 μm or more, 8 μm or more, 10 μm or more, or 15 μm or more. The dimension S ₁ may be, for example, 20 μm or less, 25 μm or less, 30 μm or less, or 40 μm or less. The range of the dimension S ₁ may be determined by a first group consisting of 5 μm, 8 μm, 10 μm, and 15 μm, and/or a second group consisting of 20 μm, 25 μm, 30 μm, and 40 μm. The range of the dimension S ₁ may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the dimension S ₁ may be determined by a combination of any two of the values included in the first group described above. The range of the dimension S ₁ may be determined by a combination of any two of the values included in the second group described above. For example, it may be 5 μm or more and 40 μm or less, 5 μm or more and 30 μm or less, 5 μm or more and 25 μm or less, 5 μm or more and 20 μm or less, 5 μm or more and 15 μm or less, 5 μm or more and 10 μm or less, 5 μm or more and 8 μm or less, 8 μm or more and 40 μm or less, 8 μm or more and 30 μm or less, 8 μm or more and 25 μm or less, 8 μm or more and 20 μm or less, 8 μm or more and 15 μm or less, 8 μm or more and 10 μm or less, 10 μm or more and 40 μm or less, or 10 μm or less. It may be 30 μm or less, 10 μm or more and 25 μm or less, 10 μm or more and 20 μm or less, 10 μm or more and 15 μm or less, 15 μm or more and 40 μm or less, 15 μm or more and 30 μm or less, 15 μm or more and 25 μm or less, 15 μm or more and 20 μm or less, 20 μm or more and 40 μm or less, 20 μm or more and 30 μm or less, 20 μm or more and 25 μm or less, 25 μm or more and 40 μm or less, 25 μm or more and 30 μm or less, or 30 μm or more and 40 μm or less.

The dimension _S2 of the through hole 25 (second hole 37) in the second surface 20b may be, for example, 8 μm or more, 10 μm or more, 15 μm or more, or 20 μm or more. The dimension _S2 may be, for example, 25 μm or less, 30 μm or less, 40 μm or less, or 50 μm or less. The range of the dimension _S2 may be determined by a first group consisting of 8 μm, 10 μm, 15 μm, and 20 μm, and/or a second group consisting of 25 μm, 30 μm, 40 μm, and 50 μm. The range of the dimension _S2 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the dimension _S2 may be determined by a combination of any two of the values included in the first group described above. The range of the dimension _S2 may be determined by a combination of any two of the values included in the second group described above. For example, it may be 8 μm or more and 50 μm or less, 8 μm or more and 40 μm or less, 8 μm or more and 30 μm or less, 8 μm or more and 25 μm or less, 8 μm or more and 20 μm or less, 8 μm or more and 15 μm or less, 8 μm or more and 10 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 40 μm or less, 10 μm or more and 30 μm or less, 10 μm or more and 25 μm or less, 10 μm or more and 20 μm or less, 10 μm or more and 15 μm or less, 15 μm or more and 50 μm or less, or 1 It may be 5 μm or more and 40 μm or less, 15 μm or more and 30 μm or less, 15 μm or more and 25 μm or less, 15 μm or more and 20 μm or less, 20 μm or more and 50 μm or less, 20 μm or more and 40 μm or less, 20 μm or more and 30 μm or less, 20 μm or more and 25 μm or less, 25 μm or more and 50 μm or less, 25 μm or more and 40 μm or less, 25 μm or more and 30 μm or less, 30 μm or more and 50 μm or less, 30 μm or more and 40 μm or less, or 40 μm or more and 50 μm or less.

6, in a cross section along the normal direction of the deposition mask 20, the dimension _S37 of the second hole 37 in the surface direction (the direction along the plane of the resin layer 35) may change so as to increase with increasing distance from the metal layer 31, that is, from the first surface 20a side to the second surface 20b side of the deposition mask 20. In particular, the dimension _S37 of the second hole 37 may change so as to always increase with increasing distance from the metal layer 31. In other words, the dimension _S37 of the second hole 37 may continue to change so as to always increase with increasing distance from the metal layer 31.

In addition, the term "changing to increase" as used herein means that, when the cross section of the second hole 37 taken along the normal direction is viewed as a whole, the dimension _S37 of the second hole 37 changes to increase as it moves away from the metal layer 31. Therefore, the term "changing to increase" does not only mean that the dimension _S37 of the second hole 37 continues to change to increase as it moves away from the metal layer 31 as shown in Fig. 6. Therefore, even if the dimension _S37 does not change or the dimension _S37 decreases in some regions as it moves away from the metal layer 31, when the cross section of the second hole 37 taken along the normal direction is viewed as a whole, the dimension _S37 of the second hole 37 that can be said to change to increase as it moves away from the metal layer 31 is included in the term "changing to increase" as used herein.

In order to allow the deposition material 98 moving along a direction inclined with respect to the normal direction of the deposition mask 20 to reach the deposition target substrate 92 as much as possible, the angle θ ₁ between the normal direction of the deposition mask 20 and the side surface 38 of the second hole 37 may be increased. The angle θ ₁ may be, for example, 0 degrees or more, 5 degrees or more, 10 degrees or more, or 20 degrees or more. The angle θ ₁ may be, for example, 45 degrees or less, 50 degrees or less, 55 degrees or less, or 60 degrees or less. The range of the angle θ ₁ may be determined by a first group consisting of 0 degrees, 5 degrees, 10 degrees, and 20 degrees, and/or a second group consisting of 45 degrees, 50 degrees, 55 degrees, and 60 degrees. The range of the angle θ ₁ may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the angle θ ₁ may be determined by a combination of any two of the values included in the first group described above. The range of the angle _θ1 may be determined by a combination of any two of the values included in the second group described above. For example, the range may be 0 degrees or more and 60 degrees or less, 0 degrees or more and 55 degrees or less, 0 degrees or more and 50 degrees or less, 0 degrees or more and 45 degrees or less, 0 degrees or more and 20 degrees or less, 0 degrees or more and 10 degrees or less, 0 degrees or more and 5 degrees or less, 5 degrees or more and 60 degrees or less, 5 degrees or more and 55 degrees or less, 5 degrees or more and 50 degrees or less, 5 degrees or more and 45 degrees or less, 5 degrees or more and 20 degrees or less, 5 degrees or more and 10 degrees or less, 10 degrees or more and 60 degrees or less, 10 degrees or more and ... It may be 55 degrees or less, may be 10 degrees or more and 50 degrees or less, may be 10 degrees or more and 45 degrees or less, may be 10 degrees or more and 20 degrees or less, may be 20 degrees or more and 60 degrees or less, may be 20 degrees or more and 55 degrees or less, may be 20 degrees or more and 50 degrees or less, may be 20 degrees or more and 45 degrees or less, may be 45 degrees or more and 60 degrees or less, may be 45 degrees or more and 55 degrees or less, may be 45 degrees or more and 50 degrees or less, may be 50 degrees or more and 60 degrees or less, may be 50 degrees or more and 55 degrees or less, or may be 55 degrees or more and 60 degrees or less.

In the deposition mask 20 of this embodiment, the metal layer 31 is disposed closer to the deposition substrate 92 than the resin layer 35. This reduces the distance between the magnet 93, which may be disposed on the side of the deposition substrate 92 opposite the deposition mask 20, and the metal layer 31, and increases the force of the magnet 93 to attract the metal layer 31 to the deposition substrate 92. Therefore, when a deposition process is performed using a deposition mask 20 having a metal layer 31 and a resin layer 35, the adhesion of the deposition mask 20 to the deposition substrate 92 can be effectively improved.

Next, an example of a method for manufacturing the deposition mask 20 will be described with reference to Figures 7 to 13.

First, as shown in FIG. 7, a metal layer 31 and a resin layer 35 are prepared. The metal layer 31 may contain an iron-nickel alloy. The resin layer 35 may be formed as a sheet or film, and the metal layer 31 may be formed on the resin layer 35 by electrolytic plating, electroless plating, or other plating methods, physical vapor deposition, sputtering, CVD, or other methods. Alternatively, a rolled metal plate may be used as the metal layer 31, and the resin layer 35 may be formed by applying a resin having fluidity onto the metal layer 31 and then curing the resin. Alternatively, the resin layer 35 formed as a sheet or film may be bonded to the metal layer 31 formed from a rolled metal plate. When the metal layer 31 is formed from a metal plate, the thickness of the metal layer 31 may be adjusted by polishing the metal plate.

Next, the support substrate 41 is prepared. The support substrate 41 may have a first surface 41a and a second surface 41b opposite to the first surface 41a. The support substrate 41 may be a layer made of a rolled metal plate (rolled metal layer).

Next, the metal layer 31 and the resin layer 35 are placed on the support substrate 41. This prepares the resin layer 35 and the metal layer 31 containing an iron-nickel alloy placed on the resin layer 35. In particular, as shown in FIG. 8, the resin layer 35 and the metal layer 31 may be placed on the first surface 41a side of the support substrate 41 so that the resin layer 35 is located between the support substrate 41 and the metal layer 31.

9, the metal layer 31 is etched to form the first holes 33 in the metal layer 31. The first holes 33 may be formed, for example, by using a photolithography technique. The formation of the first holes 33 using the photolithography technique may be performed, for example, as follows. First, a resin layer (not shown) is formed on the first surface 31a of the metal layer 31 by applying a photosensitive resin having fluidity onto the first surface 31a of the metal layer 31 and curing it, or by placing a sheet-like photosensitive resin on the first surface 31a. Next, the resin layer is exposed to light using a photomask having a light-shielding layer arranged in a pattern corresponding to the pattern of the first holes 33 to be formed. Then, the resin layer is developed to form a resist layer having a pattern corresponding to the pattern of the first holes 33 from the resin layer. In particular, the resist layer has an opening having a shape corresponding to the shape of the first holes 33 at the location where the first holes 33 are to be formed. The metal layer 31 is then etched with an etching solution through the openings in the resist layer to form a first hole 33 that extends from the first surface 31a to the second surface 32b of the metal layer 31.

10, the metal layer 31 is used as a mask to form a second hole 37 in the resin layer 35 that communicates with the first hole 33. Here, "using the metal layer 31 as a mask to form a second hole 37 in the resin layer 35 that communicates with the first hole 33" refers to performing the same process at least at a certain moment on the first surface 31a of the metal layer 31 and the resin layer 35 exposed from the first hole 33, thereby forming a second hole 37 in the resin layer 35 exposed from the first hole 33 that communicates with the first hole 33.

The second hole 37 may be formed by irradiation of a laser beam, for example. An example of a method for forming the second hole 37 will be described with reference to FIG. 11. While moving the light source 50 along a direction parallel to the plane of the metal layer 31, the light source 50 irradiates the metal layer 31 and the resin layer 35 with a laser beam L. The laser beam L may be irradiated so as to spread as it moves away from the light source 50 over a predetermined angle θ _2. The laser beam L may be irradiated at least at a certain moment to the first surface 31a of the metal layer 31 and the resin layer 35 exposed from the first hole 33. Of the irradiated laser beam L, the laser beam L irradiated onto the metal layer 31 is reflected by the metal layer 31. Note that a part of the laser beam L irradiated onto the metal layer 31 may be absorbed by the metal layer 31. At this time, the metal layer 31 is not changed by the laser beam L. On the other hand, the laser beam L that reaches the resin layer 35 through the first hole 33 scrapes off the resin layer 35. As a result, a second hole 37 communicating with the first hole 33 is formed in the resin layer 35. The first hole 33 and the second hole 37 communicating with the first hole 33 form a through hole 25.

In addition, by adjusting the energy of the laser light L, the resin layer 35 can be scraped off by the laser light L without changing the metal layer 31. Here, an example of the laser energy when a KrF excimer laser is used is shown as an example. The value of the energy of the laser light L may be, for example, 0.5 J/cm ² or more, 1.0 J/cm ² or more, 1.5 J/cm ² or more, or 2.0 J/cm ² or more. In addition, the value of the energy of the laser light L may be, for example, 3.0 J/cm ² or less, 4.0 J/cm ² or less, 5.0 J/cm ² or less, or 6.0 J/cm ² or less. The range of energy values of the laser light L may be determined by a first group consisting of 0.5 J/cm ² , 1.0 J/cm ² , 1.5 J/cm ² and 2.0 J/cm ² and/or a second group consisting of 3.0 J/cm ² , 4.0 J/cm ² , 5.0 J/cm ² and 6.0 J/cm ^2. The range of energy values of the laser light L may be determined by a combination of any one of the values included in the above-mentioned first group and any one of the values included in the above-mentioned second group. The range of energy values of the laser light L may be determined by a combination of any two of the values included in the above-mentioned first group. The range of energy values of the laser light L may be determined by a combination of any two of the values included in the above-mentioned second group. For example, it may be 0.5 J/cm ² or more and 6.0 J/cm ² or less, 0.5 J/cm ² or more and 5.0 J/cm ² or less, 0.5 J/cm ² or more and 4.0 J/cm ² or less, 0.5 J/cm ² or more and 3.0 J/cm ² or less, 0.5 J/cm ² or more and 2.0 J/cm ² or less, 0.5 J/cm ² or more and 1.5 J/cm ² or less, 0.5 J/cm ² or more and 1.0 J/cm ² or less, 1.0 J/cm ² or more and 6.0 J/cm ² or less, 1.0 J/cm ² or more and 5.0 J/cm ² or less, 1.0 J/cm ² or more and 4.0 J/cm ² or less, 1.0 J/cm ² or more and 3.0 J/cm ² or less, or 1.0 J/cm ² or more and 2.0 J/cm ² or less, may be 1.0 J/ ^cm2 or more and 1.5 J/ ^cm2 or less, may be 1.5 J/cm2 or more and 6.0 J/ ^{cm2 or} less, may be 1.5 J/ ^cm2 or more and 5.0 J/ ^cm2 or less, may be 1.5 J/ ^cm2 or more and 4.0 J/ ^cm2 or less, may be 1.5 J/cm2 or more and 3.0 J/ ^{cm2 or} less, may be 1.5 J/cm2 or more and 2.0 J/ ^{cm2 or} less, may be 2.0 J/cm2 or more and 6.0 J/ ^cm2 or less, may be 2.0 J/ ^cm2 or more and 5.0 J/ ^{cm2 or} less, may be 2.0 J/cm2 or more and 4.0 J/ ^{cm2 or} less, may be 2.0 J/cm2 or more and 3.0 J/ ^{cm2 or} less, may be 3.0 J/cm2 or more and ^6.0 J/cm2 or less, may be 3.0 J/ ^cm2 or more and 3.0 J/cm2 or less. ² or more and 5.0 J/ ^cm2 or less, 3.0 J/ ^cm2 or more and 4.0 J/ ^cm2 or less, 4.0 J/cm2 ^or more and 6.0 J/ ^{cm2 or} less, 4.0 J/cm2 or more and 5.0 J/ ^cm2 or less, or 5.0 J/ ^cm2 or more and 6.0 J/ ^cm2 or less.

In the example shown in FIG. 11, when the light source 50 is located at position _P1 , one side surface (side surface located on the right side in FIG. 11) 38 of the second hole 37 may be formed by the laser light L at the most leading end side (right side in FIG. 11) of the irradiation range of the laser light L irradiated from the light source 50. As the light source 50 moves from position _P1 to position _P2 , the inside of the second hole 37 is scraped off. When the light source 50 is located at position _P2 , the other side surface (side surface located on the left side in FIG. 11) 38 of the second hole 37 may be formed by the laser light L at the most rear end side (left side in FIG. 11) of the irradiation range of the laser light L irradiated from the light source 50. In this case, the angle θ ₁ (see FIG. 6) between the normal direction of the deposition mask 20 and the side surface 38 of the second hole 37 is determined by the angle θ ₂ that defines the irradiation range of the laser light L. In particular, the following relationship exists between the angle θ ₁ and the angle θ ₂ .
_θ1 = _θ2 × (1/2)

The angle θ ₂ may be, for example, 0 degrees or more, 10 degrees or more, 20 degrees or more, or 40 degrees or more. The angle θ ₂ may be, for example, 90 degrees or less, 100 degrees or less, 110 degrees or less, or 120 degrees or less. The range of the angle θ ₂ may be determined by a first group consisting of 0 degrees, 10 degrees, 20 degrees, and 40 degrees, and/or a second group consisting of 90 degrees, 100 degrees, 110 degrees, and 120 degrees. The range of the angle θ ₂ may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the angle θ ₂ may be determined by a combination of any two of the values included in the first group described above. The range of the angle θ ₂ may be determined by a combination of any two of the values included in the second group described above. For example, it may be 0 degrees or more and 120 degrees or less, 0 degrees or more and 110 degrees or less, 0 degrees or more and 100 degrees or less, 0 degrees or more and 90 degrees or less, 0 degrees or more and 40 degrees or less, 0 degrees or more and 20 degrees or less, 0 degrees or more and 10 degrees or less, 10 degrees or more and 120 degrees or less, 10 degrees or more and 110 degrees or less, 10 degrees or more and 100 degrees or less, 10 degrees or more and 90 degrees or less, 10 degrees or more and 40 degrees or less, 10 degrees or more and 20 degrees or less, 20 degrees or more and 120 degrees or less, or 20 degrees or more It may be 110 degrees or less, may be 20 degrees or more and 100 degrees or less, may be 20 degrees or more and 90 degrees or less, may be 20 degrees or more and 40 degrees or less, may be 40 degrees or more and 120 degrees or less, may be 40 degrees or more and 110 degrees or less, may be 40 degrees or more and 100 degrees or less, may be 40 degrees or more and 90 degrees or less, may be 90 degrees or more and 120 degrees or less, may be 90 degrees or more and 110 degrees or less, may be 90 degrees or more and 100 degrees or less, may be 100 degrees or more and 120 degrees or less, may be 100 degrees or more and 110 degrees or less, or may be 110 degrees or more and 120 degrees or less.

After that, cleaning and/or descumming may be performed to remove any residue from the resin layer 35 that may have been generated during the process of forming the second holes 37. As the descumming process, for example, oxygen plasma ashing may be used.

Next, a first resist layer 61 is formed so as to cover the metal layer 31. At this time, the first resist layer 61 may also be filled in the through holes 25 (first hole 33, second hole 37). A second resist layer (resist layer) 63 may also be formed on the surface (second surface 41b) of the support substrate 41 opposite the resin layer 35 (see FIG. 11). The first resist layer 61 is provided to prevent the metal layer 31 and the resin layer 35 from being eroded by the etching solution used in the etching process described later. Therefore, if the metal layer 31 and the resin layer 35 are prevented from being eroded by another method, the first resist layer 61 may be omitted. In this case, for example, in the etching process, the third hole 43 may be formed so that the etching solution does not come into contact with the metal layer 31 and the resin layer 35. The second resist layer 63 may have an opening 65 corresponding to the location where the third hole 43 of the support substrate 41 is to be formed. The opening 65 may overlap the through holes 25 (the first hole 33 and the second hole 37) in a plan view. In particular, the opening 65 may overlap all the protrusions 42 corresponding to one effective area 22 in a plan view. The first resist layer 61 and the second resist layer 63 may be formed, for example, by attaching a resin sheet that is resistant to the etching solution used in the etching process, or by applying and curing a resin material that has similar resistance and fluidity. The opening 65 may be formed, for example, by using a photolithography technique.

Next, the support substrate 41 is etched using the second resist layer 63 as a mask to form the third hole 43 (see FIG. 13). Specifically, an etching solution may be brought into contact with the support substrate 41 exposed in the opening 65 of the second resist layer 63, and the support substrate 41 may be etched from the second surface 41b side toward the first surface 41a side. This etching may be continued at least until the third hole 43 reaches the resin layer 35 and the resin layer 35 is exposed in the third hole 43. A ferric chloride solution or hydrochloric acid may be used as the etching solution.

In the etching process, as shown in FIG. 13, erosion due to etching can progress not only in the thickness direction (normal direction) of the support substrate 41, but also in the surface direction of the support substrate 41 (direction along the plane of the support substrate 41). Therefore, in a plan view, the dimensions of the third hole 43 formed in the etching process can be larger than the dimensions of the opening 65 in the second resist layer 63. Therefore, taking into account the amount of erosion in the surface direction of the support substrate 41 in the etching process, it is preferable that the dimensions of the opening 65 are set smaller than the dimensions of the third hole 43 to be formed.

Finally, the first resist layer 61 and the second resist layer 63 are removed. This allows the through holes 25 to communicate with the third holes 43, and results in the deposition mask 20 shown in Figures 5 and 6.

The manufacturing method of the deposition mask disclosed herein includes the steps of preparing a resin layer 35 and a metal layer 31 containing an iron-nickel alloy disposed on the resin layer 35, etching the metal layer 31 to form a first hole 33 in the metal layer 31, and using the metal layer 31 as a mask to form a second hole 37 in the resin layer 35 that communicates with the first hole 33.

According to this method for manufacturing a deposition mask, in the step of forming the second holes 37 in the resin layer 35, the second holes 37 that communicate with the first holes 33 can be formed without precisely aligning the device (e.g., the light source 50) used to form the second holes 37 with the first holes 33 in the metal layer 31. Therefore, the configuration of the device used to form the second holes 37 can be simplified.

In the manufacturing method of the deposition mask disclosed herein, the second hole 37 may be formed by irradiation with laser light L.

This method of manufacturing a deposition mask makes it easy to form second holes 37 with the desired shape.

The manufacturing method of the deposition mask disclosed herein may further include, before the step of forming the first hole 33, a step of preparing a support substrate 41 having a first surface 31a and a second surface 31b on the opposite side to the first surface 31a, and a step of arranging the resin layer 35 and the metal layer 31 on the first surface 31a side of the support substrate 41 such that the resin layer 35 is located between the support substrate 41 and the metal layer 31.

According to this method for manufacturing a deposition mask, the metal layer 31 and the resin layer 35 are supported by the support substrate 41, so that the metal layer 31 and the resin layer 35 can be maintained flat.

The manufacturing method of the deposition mask disclosed herein may further include a step of forming a resist layer 63 having an opening 65 that at least partially overlaps with the second hole 37 in a plan view on the second surface 31b of the support substrate 41, a step of etching the support substrate 41 through the opening 65 to form a third hole 43 in the support substrate 41 that communicates with the second hole 37, and a step of removing the resist layer 63.

According to this method for manufacturing a deposition mask, the support substrate 41 having the third holes 43 can be used as a part of the deposition mask 20 as is. In this case, even in the deposition mask 20 after manufacture, the metal layer 31 and the resin layer 35 are supported by the support substrate 41, so that the metal layer 31 and the resin layer 35 can be maintained flat.

The deposition mask of the present disclosure is a deposition mask 20 having a first surface 20a and a second surface 20b opposite to the first surface 20a, and is provided with a metal layer 31 containing an iron-nickel alloy and having a first hole 33, and a resin layer 35 located on the second surface 20b side of the metal layer 31 and having a second hole 37 communicating with the first hole 33, the size of the second hole 37 in the surface direction of the resin layer 35 changing to become larger with increasing distance from the metal layer 31.

In the deposition mask of the present disclosure, the dimension S2 of the second hole 37 on the second surface 20b side may be greater than the dimension S1 of the first hole 33 on the first surface 20a side.

With such a deposition mask, the deposition material 98 moving in a direction inclined with respect to the normal direction of the deposition mask 20 can be sufficiently adhered to the deposition substrate 92. Therefore, in the deposition substrate 92 such as an organic EL substrate, the light emitted from the organic light-emitting material formed from the deposition material 98 adhered to the deposition substrate 92 can have high brightness. This also makes it possible to uniformize the brightness of the light emitted from the deposition substrate 92.

Various modifications can be made to the above-described embodiment. Below, modified examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, parts that can be configured similarly to the above-described embodiment will be designated with the same reference numerals as those used for the corresponding parts in the above-described embodiment, and duplicated descriptions will be omitted. Furthermore, if it is clear that the effects obtained in the above-described embodiment can also be obtained in the modified example, the description may be omitted.

Figure 14 is a diagram showing a modified example of the deposition mask 20. The deposition mask 20 of this modified example differs from the deposition mask 20 described with reference to Figure 5 in that it does not have a support substrate 41. Because the deposition mask 20 shown in Figure 14 does not have a support substrate 41, the overall thickness of the deposition mask 20 can be reduced.

Such a deposition mask 20 may be manufactured as follows, for example. In the step of arranging the metal layer 31 and the resin layer 35 on the support substrate 41 described with reference to FIG. 8, a layer (peeling layer) that can be peeled off in a later step is arranged between the support substrate 41 and the resin layer 35. For example, an adhesive that foams and becomes peelable when heated may be used as the peeling layer. For example, a release sheet "REVALPHA (registered trademark)" manufactured by Nitto Denko Corporation may be used as such an adhesive. Then, after the step of forming the second hole 37 in the resin layer 35, the metal layer 31 and the resin layer 35 may be peeled off from the peeling layer. When an adhesive that foams and becomes peelable when heated is used as the peeling layer, the metal layer 31 and the resin layer 35 may be peeled off from the peeling layer after the step of forming the second hole 37 in the resin layer 35, at least the adhesive may be heated to peel off the metal layer 31 and the resin layer 35. When performing cleaning and/or descum processing to remove residue and the like from the resin layer 35 generated in the process of forming the second holes 37, the cleaning and/or descum processing may be performed before peeling the metal layer 31 and the resin layer 35 from the support substrate 41, or may be performed after peeling the metal layer 31 and the resin layer 35 from the support substrate 41.

The manufacturing method of the deposition mask of this modified example may further include a step of peeling off the metal layer 31 and the resin layer 35 from the support substrate 41 after the step of forming the second holes 37.

This method of manufacturing a deposition mask makes it possible to obtain a deposition mask 20 with a reduced overall thickness.

Claims (4)

Providing a resin layer and a metal layer including an iron-nickel based alloy disposed on the resin layer;
Etching the metal layer to form a first hole in the metal layer;
and forming a second hole in the resin layer, the second hole communicating with the first hole, using the metal layer as a mask ;
The second hole is formed by irradiation with laser light . Providing a resin layer and a metal layer including an iron-nickel based alloy disposed on the resin layer;
providing a support substrate having a first surface and a second surface opposite the first surface;
a step of arranging the resin layer and the metal layer on the first surface side of the support substrate such that the resin layer is located between the support substrate and the metal layer;
Etching the metal layer to form a first hole in the metal layer;
and forming second holes in the resin layer, the second holes communicating with the first holes, using the metal layer as a mask. forming a resist layer on the second surface of the support substrate, the resist layer having an opening that at least partially overlaps with the second hole in a plan view;
Etching the support substrate through the opening to form a third hole in the support substrate communicating with the second hole;
The method for producing a deposition mask according to claim 2 , further comprising the step of removing the resist layer. The method for manufacturing a deposition mask according to claim 2 , further comprising the step of peeling off the metal layer and the resin layer from the support substrate after the step of forming the second holes.