JP2005042147A - Method of producing mask for vapor deposition, and mask for vapor deposition - Google Patents

Method of producing mask for vapor deposition, and mask for vapor deposition Download PDF

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Publication number
JP2005042147A
JP2005042147A JP2003201445A JP2003201445A JP2005042147A JP 2005042147 A JP2005042147 A JP 2005042147A JP 2003201445 A JP2003201445 A JP 2003201445A JP 2003201445 A JP2003201445 A JP 2003201445A JP 2005042147 A JP2005042147 A JP 2005042147A
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Prior art keywords
metal layer
vapor deposition
thin plate
plate material
opening
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JP2003201445A
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Japanese (ja)
Inventor
Koichi Omoto
貢一 尾本
Masaji Sotomi
正司 外海
Nobuo Ichibe
伸夫 市邊
Junji Maeoka
淳史 前岡
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Dainippon Screen Manufacturing Co Ltd
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Dainippon Screen Manufacturing Co Ltd
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Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP2003201445A priority Critical patent/JP2005042147A/en
Priority to TW093111230A priority patent/TWI242048B/en
Priority to KR1020040030378A priority patent/KR100704688B1/en
Priority to CNB2004100475492A priority patent/CN100461494C/en
Publication of JP2005042147A publication Critical patent/JP2005042147A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of producing a mask for vapor deposition capable of obtaining high working precision, satisfactory in operability as well, and capable of preventing defects such as breaking and deformation of a thin sheet stock. <P>SOLUTION: A thin sheet stock obtained by laminating a first metallic layer and a second metallic layer between which an intermediate layer formed of a material having etching resistance and solubility in a prescribed chemical is interposed is used. The thin sheet stock is etched from both the faces, so that opening parts for passing a vapor deposition material as desired are formed on the first metallic layer, and opening parts for passing the vapor deposition material are formed on the second metallic layer in such a manner that frame parts are allowed to remain inside the regions other than the forming regions of the opening parts in the first metallic layer. Thereafter, the exposed part in the intermediate layer is dissolved away by a prescribed chemical. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
この発明は、基板の表面に低分子有機ＥＬ（エレクトロルミネッセンス）材料、電極形成用材料、誘電体材料、絶縁体材料などを蒸着させる際に使用される蒸着用マスクの製造方法ならびに蒸着用マスクに関する。
【０００２】
【従来の技術】
電圧の印加によって発光する低分子有機ＥＬ材料からなる有機発光層を備えた有機ＥＬ表示パネルは、透明基板上に透明電極層を形成し、その透明電極層上に低分子有機ＥＬ材料からなる有機発光層を形成し、その有機発光層上にさらに金属電極層を形成して製造される。この有機ＥＬ表示パネルの製造工程において、透明電極層上への有機発光層の形成は、通常、所定パターンの多数の微細透孔を有する蒸着用のメタルマスクを用いて低分子有機ＥＬ材料を基板上へ蒸着させる方法で行われる。
【０００３】
有機発光層の形成工程で使用される蒸着用マスクは、従来、金属薄板材をフォトエッチングにより加工して、所定パターンの多数の微細透孔が形成された１つもしくは複数のマスク領域を有するマスク薄板を製作し、そのマスク薄板を支持フレームに固着する方法によって製造されていた。また、複数のマスク領域を有する多面取り用の蒸着用マスクは、フォトエッチングによって単一のマスク領域を有する単位マスク薄板を複数枚製作するとともに、単位マスク薄板を縁部で支持する複数の開口部を有する基材部を製作し、複数の単位マスク薄板を基材部の各開口部の縁部にそれぞれ固着する、といった方法によっても製造されていた（例えば、特許文献１参照。）。
【０００４】
【特許文献１】
特開２００１−２３７０７３号公報（第３−４頁、図１、図２）
【０００５】
【発明が解決しようとする課題】
金属薄板材に多数の微細透孔をフォトエッチングにより形成して蒸着用マスクを製造する場合、金属薄板材の厚みが薄いほど、加工精度の面からは有利である。一方、エッチング加工時や検査時等における金属薄板材のハンドリング性の良さや折れ、変形等の不良発生の防止を考えると、ある程度の厚みを有する金属薄板材を使用せざるを得ない、といったように、上記とは相反する要求がある。
【０００６】
この発明は、以上のような事情に鑑みてなされたものであり、高い加工精度が得られるとともに、作業性も良好であり、薄板素材に折れ、変形等の不良が発生するのを防止することができる蒸着用マスクの製造方法ならびに蒸着用マスクを提供することを目的とする。
【０００７】
【課題を解決するための手段】
請求項１に係る発明は、被蒸着面に蒸着材料を蒸着させる際に使用される蒸着用マスクの製造方法であって、第１の金属層と第２の金属層とを、耐エッチング性を有しかつ所定薬液に対して溶解性を有する材料で形成された中間層を介挿させて積層した薄板素材を使用し、前記薄板素材を両面からエッチングして、前記第１の金属層に、蒸着材料を所望通りに通過させるための開孔部を形成するとともに、前記第２の金属層の、前記第１の金属層における前記開孔部の形成領域以外の領域内に枠部を残存させるように、蒸着材料を通過させるための開孔部を形成する工程と、前記中間層の露出部分を所定薬液により溶解させて除去する工程と、を備えたことを特徴とする。
【０００８】
請求項２に係る発明は、被蒸着面に蒸着材料を蒸着させる際に使用される蒸着用マスクの製造方法であって、第１の金属層と第２の金属層とを、耐エッチング性を有しかつ所定薬液に対して溶解性を有する材料で形成された中間層を介挿させて積層した薄板素材を使用し、前記薄板素材を片面側からエッチングして、前記第２の金属層に、枠部を残存させるようにして、蒸着材料を通過させるための開孔部を形成する工程と、前記と同一の片面側から前記中間層の露出部分を所定薬液により溶解させて除去する工程と、前記薄板素材を、前記と同一の片面側からエッチングして、前記第１の金属層の、前記第２の金属層における前記開孔部の形成領域内に、蒸着材料を所望通りに通過させるための開孔部を形成する工程と、を備えたことを特徴とする。
【０００９】
請求項３に係る発明は、被蒸着面に蒸着材料を蒸着させる際に使用される蒸着用マスクの製造方法であって、第１の金属層と第２の金属層とを、耐エッチング性を有しかつ所定薬液に対して溶解性を有する材料で形成された中間層を介挿させて積層した薄板素材を使用し、前記薄板素材を片面側からもしくは両面からエッチングして、前記第１の金属層に、蒸着材料を所望通りに通過させるための開孔部を形成する工程と、前記薄板素材の、前記開孔部が形成された第１の金属層面を、耐エッチング性を有する保護膜によって被覆する工程と、前記第１の金属層面が保護膜によって被覆された前記薄板素材をエッチングして、前記第２の金属層の、前記第１の金属層における前記開孔部の形成領域以外の領域内に枠部を残存させるように、蒸着材料を通過させるための開孔部を形成する工程と、前記薄板素材の第１の金属層面から前記保護膜を剥離して除去する工程と、前記中間層の露出部分を所定薬液により溶解させて除去する工程と、を備えたことを特徴とする。
【００１０】
請求項１ないし請求項３に係る各発明の製造方法によると、蒸着材料を所望通りに通過させるための開孔部が形成される第１の金属層を薄くすることにより、エッチングの加工精度を高めることが可能になる。一方、枠部が残存するように開孔部が形成される第２の金属層が第１の金属層に積層されているので、薄板素材全体としての厚みが確保され、エッチング加工時や検査時等において薄板素材のハンドリング性が良好であり、また、薄板素材に折れ、変形等の不良が発生する心配が少ない。
【００１１】
請求項４に係る発明は、請求項１ないし請求項３のいずれかに記載の製造方法において、前記第１の金属層に形成される開孔部が、所定パターンを有する複数の微細開孔部であることを特徴とする。
【００１２】
請求項５に係る発明は、請求項１ないし請求項３のいずれかに記載の製造方法において、前記第１の金属層に形成される開孔部が、べた状開孔部であることを特徴とする。
【００１３】
請求項６に係る発明は、請求項１ないし請求項５のいずれかに記載の製造方法において、前記第１の金属層および前記第２の金属層にそれぞれ開孔部が形成された薄板材を支持フレームの片面側に、薄板材の一軸方向のみに張りをもたせて接合する工程を備えたことを特徴とする。
【００１４】
この製造方法では、薄板材を二軸方向にそれぞれ張りをもたせて支持フレームに接合する場合に比べて、支持フレームへの薄板材の接合作業が容易になる。また、薄板材を二軸方向にそれぞれ張力を付与して支持フレームに接合する場合は、それぞれの軸方向における張力を均等にしないと、開孔部の寸法を設計通りに精度良く再現することが難しくなるが、薄板材を一軸方向のみに張りをもたせて支持フレームに接合するので、一軸方向における張力を適切に調整しておけば、開孔部の寸法を設計通りに精度良く再現することが容易にできる。
【００１５】
請求項７に係る発明は、請求項１ないし請求項６のいずれかに記載の製造方法において、前記薄板素材の前記第２の金属層の厚みが前記第１の金属層の厚みより厚くされたことを特徴とする。
【００１６】
この製造方法では、蒸着材料を所望通りに通過させるための開孔部が形成される第１の金属層が薄くなり、薄板素材全体としての厚みが厚くなるので、エッチングの加工精度を好適に高めることが可能となり、薄板素材のハンドリング性がより良好で、薄板素材に折れ、変形等の不良が発生する心配がより少なくなる。
【００１７】
請求項８に係る発明は、請求項１ないし請求項７のいずれかに記載の製造方法において、前記薄板素材の中間層がチタンで形成され、その中間層の露出部分をフッ化アンモニウム系または苛性ソーダ系の薄膜液により溶解させて除去することを特徴とする。
【００１８】
請求項９に係る発明は、請求項１ないし請求項７のいずれかに記載の製造方法において、前記薄板素材の中間層が樹脂材で形成され、その中間層の露出部分を苛性ソーダ系の薄膜液により溶解させて除去することを特徴とする。
【００１９】
請求項１０に係る発明は、被蒸着面に蒸着材料を蒸着させる際に使用される蒸着用マスクであって、蒸着材料を所望通りに通過させるための開孔部がエッチングにより形成され被蒸着面に密接される蒸着用金属層と、この蒸着用金属層における前記開孔部の形成領域以外の領域内に枠部を残存させるように、蒸着材料を通過させるための開孔部がエッチングにより形成され、前記蒸着用金属層を補強するように支持する支持用金属層と、この支持用金属層における前記開孔部に対応する部分が溶解して除去され、その支持用金属層と前記蒸着用金属層との間に介挿された中間層と、が積層された薄板材からなることを特徴とする。
【００２０】
請求項１１に係る発明は、請求項１０記載の蒸着用マスクにおいて、前記蒸着用金属層に形成された開孔部が、所定パターンを有する複数の微細開孔部であることを特徴とする。
【００２１】
請求項１２に係る発明は、請求項１０記載の蒸着用マスクにおいて、前記蒸着用金属層に形成された開孔部がべた状開孔部であることを特徴とする。
【００２２】
請求項１３に係る発明は、請求項１０ないし請求項１２のいずれかに記載の蒸着用マスクにおいて、前記薄板材の一軸方向のみに張りをもたせて前記支持用金属層側に支持フレームが接合されたことを特徴とする。
【００２３】
請求項１４に係る発明は、請求項１０ないし請求項１３のいずれかに記載の蒸着用マスクにおいて、前記薄板材の前記第２の金属層の厚みが前記第１の金属層の厚みより厚くされたことを特徴とする。
【００２４】
【発明の実施の形態】
以下、この発明の好適な実施形態について図面を参照しながら説明する。
【００２５】
図１および図２は、この発明の１実施形態を示し、図１は、蒸着用マスクの平面図を、その一部分を拡大した平面図と共に示したものであり、図２は、蒸着用マスクの薄板材の一部を概略的に示す断面図である。この蒸着用マスク１０は、矩形状の支持フレーム（図示せず）の片面側に、複数のマスク領域１４を有する薄板材１２を固着して構成されている。
【００２６】
薄板材１２は、図２に示すように、蒸着用金属層１６と支持用金属層１８と中間層２０とを積層した３層構造を有している。蒸着用金属層１６は、蒸着処理の際に基板の表面に密接される面をなし、蒸着用金属層１６のそれぞれのマスク領域１４には、図１にＡ部分の拡大図を示すように、蒸着材料を所望通りに通過させるための多数の微細開孔部２２が所定パターンで加工形成されている。この蒸着用金属層１６に形成される微細開孔部２２の形状は、図示例では矩形状であるが、スロット状やスリット状等であってもよい。
【００２７】
支持用金属層１８は、蒸着処理の際に蒸着源側となる面をなし、支持用金属層１８には、蒸着用金属層１６における微細開孔部２２の形成領域以外の領域内に枠部２４を残存させるように、蒸着材料を通過させるための大きい開孔部２６が形成されている。この支持用金属層１８は、薄板材１２全体としての厚みを確保して蒸着用金属層１６を補強するように支持するためのものである。したがって、支持用金属層１８の厚みは、蒸着用金属層１６の厚みより厚くすることが好ましい。一方、蒸着用金属層１６に形成される多数の微細開孔部２２は、基板の表面に所望パターンで蒸着される蒸着材料を通過させるためのものであるので、その加工精度を高める必要があり、このためには蒸着用金属層１６の厚みを可能な範囲で薄くすることが好ましい。例えば、蒸着用金属層１６の厚みは、５μｍ〜５０μｍの範囲とし、支持用金属層１８の厚みは、２０μｍ〜３００μｍの範囲とすることが好ましい。蒸着用金属層１６の微細開孔部２２および支持用金属層１８の開孔部２６は、後述するようにそれぞれフォトエッチングにより形成される。また、蒸着用金属層１６および支持用金属層１８は、Ｆｅ（鉄）やインバー合金等のＦｅ／Ｎｉ（鉄／ニッケル）合金など、エッチング可能な金属材料でそれぞれ形成される。
【００２８】
上記した蒸着用金属層１６と支持用金属層１８との間に、中間層２０が介挿される。この中間層２０は、三層構造の薄板素材に対し後述するようなフォトエッチング法を実行して薄板材１２を作製する結果、蒸着用金属層１６と支持用金属層１８との間に残存するものであり、支持用金属層１８における開孔部２６に対応する部分が除去された平面および断面形状を有している。この中間層２０は、耐エッチング性を有しかつエッチング液以外の所定の薬液に対して溶解性を有する材料で形成される。このような材料として、例えば、苛性ソーダ等のアルカリ液に対し溶解可能なＴｉ（チタン）や樹脂材などが使用される。
【００２９】
中間層２０を形成する材料について、より詳しく説明すると、金属材料としては、耐エッチング性や蒸着用金属層１６および支持用金属層１８を形成する金属材料、例えば３６Ｎｉ鉄合金等との接着性などの観点から、Ｔｉが好適である。蒸着用金属層１６をなす第１の金属層と支持用金属層１８をなす第２の金属層との間にＴｉからなる中間層が介挿された三層構造の薄板素材を製造する方法としては、例えば、２枚の金属薄板の中間にＴｉを真空蒸着法、イオンプレーティング法、スパッタリング法などによって成膜しつつ、それと同時に２枚の金属薄板とＴｉ薄膜とを強圧着する、といった方法が採用される。このようにして製造された薄板素材の中間層をなすＴｉは、フッ化アンモニウム系や苛性ソーダ系の薄膜液を使用して溶解させることが可能である。
【００３０】
また、樹脂材料としては、アルカリ系薄膜液に対して溶解性を有しかつエッチング液で溶解しない熱架橋型の合成樹脂や天然樹脂が使用される。より具体的には、一般にドライフィルムと呼ばれるアクリル系フィルム状レジストが簡便に使用し得るので好適である。このアクリル系フィルム状レジストを使用して三層構造の薄板素材を製造するには、２枚の金属薄板の中間にフィルム状レジストを挟むようにしてラミネートし熱硬化させるようにする。このようにして製造された薄板素材の中間層をなすアクリル系フィルム状レジストは、苛性ソーダ系の薄膜液を使用して溶解させることが可能である。また、２枚の金属薄板のうちの一方の片面に上記以外の可溶性接着シートを貼り付けたり液状の接着剤を塗布し、その接着シートや接着剤を介して他方の金属薄板を接合し、それらを強圧接して三層構造の薄板素材を製造することもできる。中間層をなす接着シートや接着剤は、強アルカリ液によって溶解させることが可能である。さらに、２枚の金属薄板のうちの一方の片面にレジスト（感光性なし）剤を塗布し、そのレジスト剤を介して他方の金属薄板を接合し、それらを強圧接して三層構造の薄板素材を製造するようにしてもよい。そのようなレジスト剤は、アルカリ現像液を使用して溶解させることが可能である。
【００３１】
この蒸着用マスク１０は、基板の表面に低分子有機ＥＬ材料、電極形成用材料、誘電体材料、絶縁体材料などを所定パターンで蒸着させる際に使用される。例えば、有機ＥＬ表示パネルの製造工程においては、透明基板（ガラス基板）上にＩＴＯ（インジウム錫酸化物）等の透明電極層を形成した後、この蒸着用マスク１０の薄板材１２の蒸着用金属層１６面側を透明基板の透明電極層側に位置合わせして密着させ、薄板材１２の微細開孔部２２を通して低分子有機ＥＬ材料を透明電極層上に蒸着させ、透明電極層上に所定パターンの有機発光層が形成されるようにする。有機発光層が形成されると、その有機発光層上にさらに金属電極層を形成して有機ＥＬ表示パネルが製造される。
【００３２】
図１および図２に示した蒸着用マスク１０の薄板材１２は、三層構造の薄板素材の第１の金属層および第２の金属層にそれぞれフォトエッチングによって開孔部を形成することにより製造される。図３および図４により、蒸着用マスクの製造方法の１例について詳しく説明する。
【００３３】
まず、図３の（ａ）に示すように、第１の金属層３２と第２の金属層３４との間に中間層３６が介挿された薄板素材３０を用意する。第１の金属層３２および第２の金属層３４は、インバー合金や鉄−ニッケル，コバルト合金等の熱膨張が少ない金属材料で形成され、中間層３６は、上記したようなチタンや樹脂材で形成されている。第１の金属層３２の厚みは、例えば５μｍ〜５０μｍであり、第２の金属層３４の厚みは、例えば２０μｍ〜３００μｍである。このような薄板素材３０の両面に、図３の（ｂ）に示すように、それぞれ感光液を塗布し乾燥させて、薄板素材３０の両面にそれぞれフォトレジスト膜３８、４０を被着形成する。
【００３４】
次に、図３の（ｃ）に示すように、薄板素材３０の第１の金属層３２面側に、形成しようとする多数の微細開孔部に対応した所定パターンを有する露光用マスク４２を密着させるとともに、薄板素材３０の第２の金属層３４面側に、微細開孔部の形成領域以外の領域内に枠部を残存させるようにして大きい開孔部を形成させるための所定パターンを有する露光用マスク４４を密着させる。そして、各露光用マスク４２、４４を介して各フォトレジスト膜３８、４０をそれぞれ露光し、図３の（ｄ）に示すように、各フォトレジスト膜３８ａ、４０ａをそれぞれ所定パターン通りに硬化（不溶化）させた後、図３の（ｅ）に示すように、現像して、薄板素材３０の両面にそれぞれ所定パターンを有する耐食性レジスト膜３８ｂ、４０ｂを形成する。
【００３５】
続いて、塩化第二鉄水溶液等のエッチング液を用いてスプレイエッチングを行うことにより、図４の（ｆ）に示すように、第１の金属層３２に微細開孔部４６を形成するとともに、第２の金属層３４に、枠部を残すようにして大きい開孔部４８を形成する。次に、苛性ソーダ等の薄膜液を使用して、図４の（ｇ）に示すように、薄板素材３０の両面からそれぞれ耐食性レジスト膜３８ｂ、４０ｂを剥離する。さらに引き続き、苛性ソーダ等の薄膜液を使用して、図４の（ｈ）に示すように、中間層３６の露出部分を溶解させて除去することにより、第１の金属層３２の微細開孔部４６と第２の金属層３４の開孔部４８とが連通して、薄板材５０が得られる。このようにして作製された薄板材５０を、図４の（ｉ）に示すように、矩形状の支持フレーム５２の片面側に接合することにより、蒸着用マスク５４が完成する。支持フレーム１２としては、例えば、ステンレス鋼やインバー合金等で形成されたフレームが使用される。
【００３６】
薄板材５０を支持フレーム５２に接合する作業は、例えば以下のようにして行われる。すなわち、図５の（ａ）に斜視図を示すように、薄板材５０を支持フレーム５２の片面側に重ね合わせるようにする。このとき、図５の（ｂ）に示すように、薄板材５０を、その一軸方向のみに張りをもたせるようにして支持フレーム５２の片面側に重ね合わせる。そして、図５の（ｃ）に示すように、薄板材５０に張りをもたせた状態のままで、薄板材５０を支持フレーム５２の片面側に一体的に接合する。この際、支持フレーム５２の、薄板材５０に対する張力の付与方向において互いに対向する一対の枠部と薄板材５０の両端辺部とを接合する。図中の符号５６が、支持フレーム５２と薄板材５０との接合部分である。また、支持フレーム５２への薄板材５０の接合は、溶接、例えばスポット溶接、接着剤や接着テープを用いた接着などの方法により行われる。
【００３７】
次に、図６ないし図８に基づいて、蒸着用マスクの製造方法の別の例について説明する。
【００３８】
図６の（ａ）に示すように、第１の金属層３２と第２の金属層３４との間に中間層３６が介挿された薄板素材３０を用意し、図６の（ｂ）に示すように、それぞれ感光液を塗布し乾燥させて、薄板素材３０の両面にそれぞれフォトレジスト膜３８、４０を被着形成する。
【００３９】
次に、図６の（ｃ）に示すように、薄板素材３０の第２の金属層３４面側に、微細開孔部の形成領域以外の領域内に枠部を残存させるようにして大きい開孔部を形成させるための所定パターンを有する露光用マスク４４を密着させる。そして、薄板素材３０の第１の金属層３２面側は、そのままフォトレジスト膜３８を全面露光するとともに、薄板素材３０の第２の金属層３４面側は、露光用マスク４４を介してフォトレジスト膜４０を露光し、図６の（ｄ）に示すように、薄板素材３０の第１の金属層３２面側は、フォトレジスト膜３８を全面的に硬化（不溶化）させて、第１の金属層３２の全面を被覆する耐食性レジスト膜３８ｃを形成する。他方、薄板素材３０の第２の金属層３４面側は、フォトレジスト膜４０ａを所定パターン通りに硬化させた後、図６の（ｅ）に示すように、現像して、薄板素材３０の第２の金属層３４面に所定パターンを有する耐食性レジスト膜４０ｂを形成する。なお、薄板素材３０の第１の金属層３２面側については、フォトレジスト膜３８を被着形成した後に全面露光して耐食性レジスト膜３８ｃを形成する代わりに、第１の金属層３２面に耐酸性のある耐エッチングフィルムを貼り付けるようにし、後述するエッチング終了後に、その耐エッチングフィルムを第１の金属層３２面から剥がすようにしてもよい。
【００４０】
続いて、塩化第二鉄水溶液等のエッチング液を用いてスプレイエッチングを行うことにより、図７の（ｆ）に示すように、第２の金属層３４に、枠部を残すようにして大きい開孔部４８を形成する。次に、苛性ソーダ等の薄膜液を使用して、図７の（ｇ）に示すように、薄板素材３０の第２の金属層３４面から耐食性レジスト膜４０ｂを剥離する。さらに引き続き、苛性ソーダ等の薄膜液を使用して、図７の（ｈ）に示すように、中間層３６の露出部分を溶解させて除去する。
【００４１】
次に、図７の（ｉ）に示すように、薄板素材３０の第２の金属層３４面側に感光液を塗布し乾燥させて、第２の金属層３４面側に、開孔部４８内にも充填されたフォトレジスト膜５８を被着形成する。続いて、図７の（ｊ）に示すように、薄板素材３０の第２の金属層３４面側に、形成しようとする多数の微細開孔部に対応した所定パターンを有する露光用マスク４２を密着させる。そして、薄板素材３０の第２の金属層３４面側から露光用マスク４２を介してフォトレジスト膜５６を露光し、図８の（ｋ）に示すように、フォトレジスト膜５６ａを所定パターン通りに硬化（不溶化）させた後、図８の（ｌ）に示すように、現像して、薄板素材３０の第２の金属層３４面側に所定パターンを有する耐食性レジスト膜５８ｂを形成する。
【００４２】
続いて、塩化第二鉄水溶液等のエッチング液を用いてスプレイエッチングを行うことにより、図８の（ｍ）に示すように、第１の金属層３２に微細開孔部６０を形成する。次に、苛性ソーダ等の薄膜液を使用して、図８の（ｎ）に示すように、薄板素材３０の第２の金属層３４面側から耐食性レジスト膜５８ｂを剥離することにより、薄板材６２が得られる。このようにして作製された薄板材６２を、図８の（ｏ）に示すように、矩形状の支持フレーム５２の片面側に接合することにより、蒸着用マスク６４が完成する。
【００４３】
以上のようにして製造された蒸着用マスク６４は、図８の（ｏ）のＢ部分を拡大した断面図を図９に示すように、薄板素材３０の第１の金属層３２に形成された微細開孔部６０の断面がテーパー面となり、支持フレーム５２との接合面側となる面（蒸着処理の際に蒸着源側となる面であって、図８の（ｏ）および図９では下面）から他方の面（図８の（ｏ）および図９では上面）に向かって徐々に開口寸法が小さくなっている。このような断面形状を有する微細開孔部６０が多数形成された薄板材６２を備えた蒸着用マスク６４を用いて、例えば透明基板上に形成された透明電極層上に低分子有機ＥＬ材料を蒸着させるときは、薄板材６２の、微細開孔部６０の開口面積が小さい側の面（図８の（ｏ）および図９では上面）が透明電極層と対面することになる。したがって、薄板材６２の多数の微細開孔部６０への低分子有機ＥＬ材料ガスの進入が均一にかつ良好に行われる。また、薄板材６２の微細開孔部６０の開口周縁と透明電極層との密着が良好となるため、微細開孔部６０の開口周縁によって規定される有機発光層のパターン形状が精度良く再現される、といった利点がある。
【００４４】
次に、図１０および図１１に基づいて、蒸着用マスクの製造方法のさらに別の例について説明する。この製造方法は、図３および図４に基づいて説明した上記製造方法とは途中の工程まで、すなわち図３の（ａ）〜（ｅ）に示す工程までは同じであり、それらの工程についての図示および説明を省略する。
【００４５】
図３の（ｅ）に示すように、薄板素材３０の両面にそれぞれ所定パターンを有する耐食性レジスト膜３８ｂ、４０ｂが形成されると、塩化第二鉄水溶液等のエッチング液を用いてスプレイエッチングを行うことにより、図１０の（ｆ）に示すように、第１の金属層３２に微細開孔部４６を形成する。このとき、第２の金属層３４も同時に、厚み方向において部分的にエッチングされるが、第２の金属層３４の厚みは第１の金属層３２の厚みより厚いので、第１の金属層３２に微細開孔部４６が形成された時点でエッチングを終了することにより、第２の金属層３４には、中間層３６まで到達するような開孔部が形成されない。なお、第１の金属層３２の厚みと第２の金属層３４の厚みとがそれほど違わないような場合には、第２の金属層３４面に耐酸性のある耐エッチングフィルムを貼り付けるなどして第２の金属層３４の表面を保護してから、スプレイエッチングを行い、エッチング終了後に耐エッチングフィルムを第２の金属層３４面から剥がすようにしてもよい。
【００４６】
薄板素材３０の第１の金属層３２に微細開孔部４６が形成されると、図１０の（ｇ）に示すように、第１の金属層３２の表面を耐エッチング性を有する保護膜６６によって被覆する。この保護膜６６は、例えば、アルカリ可溶性の蒸発乾燥型樹脂を第１の金属層３２面側に塗布した後に乾燥させたり、アルカリ可溶性の紫外線硬化型樹脂を第１の金属層３２面側に塗布した後に紫外線で露光したり、保護粘着フィルムを第１の金属層３２面に貼り付けたりすることにより形成される。次に、塩化第二鉄水溶液等のエッチング液を用いてスプレイエッチングを行うことにより、図１０の（ｈ）に示すように、第２の金属層３４に、枠部を残すようにして大きい開孔部４８を形成する。そして、アルカリ液を使用して第１の金属層３２面上の樹脂膜を溶解させたり保護粘着フィルムを第１の金属層３２面から剥がしたりすることにより、図１０の（ｉ）に示すように、第１の金属層３２面から保護膜６６を剥離して除去する。続いて、苛性ソーダ等の薄膜液を使用して、図１０の（ｊ）に示すように、薄板素材３０の両面からそれぞれ耐食性レジスト膜３８ｂ、４０ｂを剥離する。なお、アルカリ可溶性樹脂を使用して保護膜６６を形成したときは、苛性ソーダ等のアルカリ液を使用することにより、第１の金属層３２面からの保護膜６６の除去および薄板素材３０の両面からの耐食性レジスト膜３８ｂ、４０ｂの剥離が１つの工程で行われることになる。
【００４７】
さらに引き続き、苛性ソーダ等の薄膜液を使用して、図１１の（ｋ）に示すように、中間層３６の露出部分を溶解させて除去することにより、第１の金属層３２の微細開孔部４６と第２の金属層３４の開孔部４８とが連通して、薄板材５０が得られる。このようにして作製された薄板材５０を、図１１の（ｌ）に示すように、矩形状の支持フレーム５２の片面側に接合することにより、蒸着用マスク５４が完成する。
【００４８】
この製造方法によったときは、微細開孔部４６が形成された第１の金属層３２が工程の途中において保護されて、薄い第１の金属層３２に折れや傷等の欠陥が発生することを防止することができる。
【００４９】
なお、上記した実施形態では、薄板材の蒸着用金属層（第１の金属層）に多数の微細開孔部が形成され、主として基板の表面に低分子有機ＥＬ材料を蒸着させる際に使用される蒸着用マスクおよびその製造方法について説明したが、例えば、薄板材の蒸着用金属層（第１の金属層）にべた状開孔部が形成され、基板の表面に電極形成用材料を蒸着させて電極を形成する際に使用される蒸着用マスクなどについても、この発明は同様に適用し得るものである。
【００５０】
また、上記した実施形態では、フォトエッチングにより薄板材を作製した後に、薄板材を支持フレームに接合するようにしているが、薄板素材をエッチング加工する前に支持フレームに接合しておき、支持フレームに接合された状態の薄板素材にエッチング加工を施すようにしてもよい。
【００５１】
【発明の効果】
請求項１ないし請求項３に係る各発明の蒸着用マスクの製造方法によると、高い加工精度を有する蒸着用マスクを得ることができるとともに、作業性も良好であり、薄板素材に折れ、変形等の不良が発生するのを防止することができる。そして、この製造方法によると、大形の蒸着用マスクであっても支障なく製造することが可能となる。
【００５２】
請求項４に係る発明の製造方法では、所定パターンを有する複数の微細開孔部が形成されたマスク領域を有し、例えば基板の表面に低分子有機ＥＬ材料を蒸着させる際に使用される蒸着用マスクを、高い加工精度で得ることができる。
【００５３】
請求項５に係る発明の製造方法では、べた状開孔部が形成されて、例えば基板の表面に電極形成用材料を蒸着させて電極を形成する際に使用される蒸着用マスクを、高い加工精度で得ることができる。
【００５４】
請求項６に係る発明の製造方法では、薄板材を支持フレームの片面側に接合する作業が容易になり、また、開孔部の寸法を設計通りに精度良く容易に再現することができる。
【００５５】
請求項７に係る発明の製造方法では、エッチングの加工精度を好適に高めることができるとともに、薄板素材のハンドリング性がより良好となり、薄板素材に折れ、変形等の不良が発生する心配がより少なくなる。
【００５６】
請求項８および請求項９に係る各発明の製造方法では、請求項１ないし請求項３に係る各発明の製造方法の各工程における処理が確実に実行されて、上記効果が得られる。
【００５７】
請求項１０に係る発明の蒸着用マスクは、加工精度が高く、その製造工程での作業性も良好であり、製造工程において薄板素材に折れ、変形等の不良が発生することもない。
【００５８】
請求項１１に係る発明の蒸着用マスクは、高い加工精度を有するので、例えば基板の表面に低分子有機ＥＬ材料を良好に蒸着させて高品質の有機発光層を形成することができる。
【００５９】
請求項１２に係る発明の蒸着用マスクは、高い加工精度を有するので、例えば基板の表面に電極形成用材料を良好に蒸着させて高品質の電極を形成することができる。
【００６０】
請求項１３に係る発明の蒸着用マスクは、開孔部の寸法が設計通りに精度良く再現され、その製造工程での作業も容易である。
【００６１】
請求項１４に係る発明の蒸着用マスクは、加工精度が高く確保され、その製造工程での作業性もより良好となり、製造工程において薄板素材に折れ、変形等の不良が発生することもなくなる。
【図面の簡単な説明】
【図１】この発明の１実施形態を示し、蒸着用マスクの平面図を、その一部分を拡大した平面図と共に示したものである。
【図２】図１に示した蒸着用マスクの薄板材の一部を概略的に示す断面図である。
【図３】この発明に係る蒸着マスクの製造方法の１例について説明するための図であって、各工程をそれぞれ断面図で示したものである。
【図４】同じく、各工程をそれぞれ断面図で示したものである。
【図５】薄板材を支持フレームに接合する作業について説明するための図であって、各工程をそれぞれ斜視図で示したものである。
【図６】この発明に係る蒸着マスクの製造方法の別の例について説明するための図であって、各工程をそれぞれ断面図で示したものである。
【図７】同じく、各工程をそれぞれ断面図で示したものである。
【図８】同じく、各工程をそれぞれ断面図で示したものである。
【図９】図６ないし図８に示した製造方法によって製造された蒸着マスクの薄板材の部分拡大断面図であって、図８の（ｏ）のＢ部分を拡大した断面図である。
【図１０】この発明に係る蒸着マスクの製造方法のさらに別の例について説明するための図であって、各工程をそれぞれ断面図で示したものである。
【図１１】同じく、各工程をそれぞれ断面図で示したものである。
【符号の説明】
１０、５４、６４ 蒸着用マスク
１２ 薄板材
１４ マスク領域
１６ 蒸着用金属層
１８ 支持用金属層
２０ 薄板材の中間層
２２ 微細開孔部
２４ 支持用金属層の枠部
２６ 支持用金属層の開孔部
３０ 薄板素材
３２ 第１の金属層
３４ 第２の金属層
３６ 薄板素材の中間層
３８、４０、５８ フォトレジスト膜
３８ｂ、４０ｂ、３８ｃ、５８ｂ 耐食性レジスト膜
４２、４４ 露光用マスク
４６、６０ 第１の金属層の微細開孔部
４８ 第２の金属層の開孔部
５０、６２ 薄板材
５２ 支持フレーム
５６ 支持フレームと薄板材との接合部分[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method of manufacturing a deposition mask used when depositing a low molecular organic EL (electroluminescence) material, an electrode forming material, a dielectric material, an insulator material, etc. on the surface of a substrate, and a deposition mask. .
[0002]
[Prior art]
An organic EL display panel having an organic light emitting layer made of a low molecular weight organic EL material that emits light upon application of a voltage is formed by forming a transparent electrode layer on a transparent substrate, and an organic material made of a low molecular organic EL material on the transparent electrode layer A light emitting layer is formed, and a metal electrode layer is further formed on the organic light emitting layer. In the manufacturing process of this organic EL display panel, the organic light emitting layer is usually formed on the transparent electrode layer by using a metal mask for vapor deposition having a large number of fine pores in a predetermined pattern as a substrate. It is performed by the method of vapor deposition.
[0003]
2. Description of the Related Art Conventionally, a vapor deposition mask used in an organic light emitting layer forming process is a mask having one or more mask regions in which a plurality of fine through holes having a predetermined pattern are formed by processing a metal thin plate material by photoetching It was manufactured by a method of manufacturing a thin plate and fixing the mask thin plate to a support frame. In addition, a multi-sided deposition mask having a plurality of mask regions is manufactured by manufacturing a plurality of unit mask thin plates having a single mask region by photoetching, and a plurality of openings for supporting the unit mask thin plates at the edges. It was also manufactured by a method in which a base material portion having a plurality of unit masks was manufactured and a plurality of unit mask thin plates were fixed to the edge portions of the respective openings of the base material portion (see, for example, Patent Document 1).
[0004]
[Patent Document 1]
Japanese Patent Laid-Open No. 2001-237073 (page 3-4, FIGS. 1 and 2)
[0005]
[Problems to be solved by the invention]
When manufacturing a vapor deposition mask by forming a large number of fine through holes in a thin metal plate material by photoetching, the thinner the thin metal plate material, the more advantageous in terms of processing accuracy. On the other hand, considering the good handling properties of metal sheet materials during etching and inspection, and the prevention of defects such as bending and deformation, it is necessary to use metal sheet materials having a certain thickness. In addition, there is a request contrary to the above.
[0006]
The present invention has been made in view of the circumstances as described above, and it is possible to obtain high processing accuracy, good workability, and prevent occurrence of defects such as bending and deformation in a thin plate material. It is an object of the present invention to provide a method for manufacturing a vapor deposition mask and a vapor deposition mask.
[0007]
[Means for Solving the Problems]
The invention according to claim 1 is a method of manufacturing a vapor deposition mask used when vapor deposition material is vapor-deposited on a surface to be vapor-deposited, wherein the first metal layer and the second metal layer are made resistant to etching. Using a thin plate material that has been laminated by interposing an intermediate layer formed of a material having solubility with respect to a predetermined chemical solution, etching the thin plate material from both sides, to the first metal layer, An opening for allowing the vapor deposition material to pass therethrough is formed, and a frame portion is left in a region of the second metal layer other than the formation region of the opening in the first metal layer. As described above, the method includes a step of forming an opening for allowing the vapor deposition material to pass through, and a step of dissolving and removing the exposed portion of the intermediate layer with a predetermined chemical solution.
[0008]
The invention according to claim 2 is a method of manufacturing a vapor deposition mask used when vapor deposition material is vapor-deposited on a surface to be vapor-deposited, wherein the first metal layer and the second metal layer are made resistant to etching. And using a thin plate material laminated by interposing an intermediate layer formed of a material that is soluble in a predetermined chemical solution, and etching the thin plate material from one side to form the second metal layer A step of forming an aperture for allowing the vapor deposition material to pass through so as to leave the frame, and a step of dissolving and removing the exposed portion of the intermediate layer with a predetermined chemical solution from the same one side as described above The thin plate material is etched from the same one side as described above, and the vapor deposition material is allowed to pass through the formation region of the opening portion of the first metal layer in the second metal layer as desired. A step of forming an opening portion for To.
[0009]
The invention according to claim 3 is a method of manufacturing a vapor deposition mask used when vapor deposition material is vapor-deposited on a surface to be vapor-deposited, wherein the first metal layer and the second metal layer are made resistant to etching. And using a thin plate material laminated by interposing an intermediate layer formed of a material having solubility in a predetermined chemical solution, etching the thin plate material from one side or both sides, A step of forming an opening for allowing the vapor deposition material to pass through the metal layer as desired, and a first metal layer surface of the thin plate material on which the opening is formed. And etching the thin plate material whose first metal layer surface is covered with a protective film, so that the second metal layer other than the formation region of the hole portion in the first metal layer is etched. Steam so that the frame remains in the area. A step of forming an opening for allowing the material to pass through, a step of peeling off and removing the protective film from the first metal layer surface of the thin plate material, and an exposed portion of the intermediate layer dissolved by a predetermined chemical solution. And a removing step.
[0010]
According to the manufacturing method of each invention according to claims 1 to 3, the etching processing accuracy is improved by thinning the first metal layer in which the opening for allowing the vapor deposition material to pass therethrough as desired. It becomes possible to increase. On the other hand, since the second metal layer in which the opening portion is formed so that the frame portion remains is laminated on the first metal layer, the thickness of the entire thin plate material is ensured, and at the time of etching processing or inspection The handleability of the thin plate material is good, and there is little fear that the thin plate material will break and cause defects such as deformation.
[0011]
The invention according to claim 4 is the manufacturing method according to any one of claims 1 to 3, wherein the opening formed in the first metal layer has a plurality of fine openings having a predetermined pattern. It is characterized by being.
[0012]
The invention according to claim 5 is the manufacturing method according to any one of claims 1 to 3, wherein the opening formed in the first metal layer is a solid opening. And
[0013]
According to a sixth aspect of the present invention, in the manufacturing method according to any one of the first to fifth aspects, a thin plate material in which an opening is formed in each of the first metal layer and the second metal layer is provided. It is characterized in that it comprises a step of joining the one side of the support frame with tension in only one axial direction of the thin plate material.
[0014]
In this manufacturing method, it is easier to join the thin plate material to the support frame than when the thin plate material is joined to the support frame with tension in each of the biaxial directions. In addition, when the thin plate material is bonded to the support frame by applying tension in each of the biaxial directions, the dimensions of the aperture can be accurately reproduced as designed unless the tension in each axial direction is equalized. Although it becomes difficult, since the thin plate material is bonded to the support frame with tension only in the uniaxial direction, if the tension in the uniaxial direction is adjusted appropriately, the dimensions of the aperture can be accurately reproduced as designed. Easy to do.
[0015]
The invention according to claim 7 is the manufacturing method according to any one of claims 1 to 6, wherein the thickness of the second metal layer of the thin plate material is made thicker than the thickness of the first metal layer. It is characterized by that.
[0016]
In this manufacturing method, since the first metal layer in which the opening for allowing the vapor deposition material to pass as desired is thinned and the thickness of the entire thin plate material is thickened, the etching processing accuracy is suitably increased. Therefore, the handling property of the thin plate material is better, and there is less fear that the thin plate material will be broken and defective such as deformation.
[0017]
The invention according to claim 8 is the manufacturing method according to any one of claims 1 to 7, wherein the intermediate layer of the thin plate material is formed of titanium, and an exposed portion of the intermediate layer is formed of ammonium fluoride or caustic soda. It is characterized by being dissolved and removed by a thin film solution of the system.
[0018]
The invention according to claim 9 is the manufacturing method according to any one of claims 1 to 7, wherein the intermediate layer of the thin plate material is formed of a resin material, and an exposed portion of the intermediate layer is formed as a caustic soda-based thin film liquid. And dissolved and removed.
[0019]
The invention according to claim 10 is a vapor deposition mask used when vapor deposition material is vapor-deposited on the surface to be vapor-deposited, wherein an opening for passing the vapor-deposited material as desired is formed by etching. A metal layer for vapor deposition that is in close contact with the metal, and a hole portion for allowing the vapor deposition material to pass through is formed by etching so that the frame portion remains in a region other than the region where the hole portion is formed in the metal layer for vapor deposition. A supporting metal layer for supporting the deposition metal layer so as to reinforce, and a portion of the supporting metal layer corresponding to the opening is dissolved and removed, and the supporting metal layer and the deposition metal layer are removed. It is characterized by comprising a thin plate material in which an intermediate layer interposed between the metal layers is laminated.
[0020]
According to an eleventh aspect of the present invention, in the vapor deposition mask according to the tenth aspect, the apertures formed in the vapor deposition metal layer are a plurality of fine apertures having a predetermined pattern.
[0021]
According to a twelfth aspect of the present invention, in the vapor deposition mask according to the tenth aspect, the hole formed in the vapor deposition metal layer is a solid hole.
[0022]
According to a thirteenth aspect of the present invention, in the evaporation mask according to any one of the tenth to twelfth aspects, a support frame is joined to the supporting metal layer side with a tension only in one axial direction of the thin plate material. It is characterized by that.
[0023]
According to a fourteenth aspect of the present invention, in the vapor deposition mask according to any one of the tenth to thirteenth aspects, the thickness of the second metal layer of the thin plate material is thicker than the thickness of the first metal layer. It is characterized by that.
[0024]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
[0025]
1 and 2 show an embodiment of the present invention. FIG. 1 shows a plan view of a vapor deposition mask together with an enlarged plan view of a part thereof. FIG. 2 shows a vapor deposition mask. It is sectional drawing which shows a part of thin plate material schematically. The evaporation mask 10 is configured by fixing a thin plate material 12 having a plurality of mask regions 14 to one side of a rectangular support frame (not shown).
[0026]
As shown in FIG. 2, the thin plate 12 has a three-layer structure in which a vapor deposition metal layer 16, a support metal layer 18, and an intermediate layer 20 are laminated. The metal layer 16 for vapor deposition forms a surface that is in close contact with the surface of the substrate during the vapor deposition process, and each mask region 14 of the metal layer 16 for vapor deposition has an enlarged view of portion A as shown in FIG. A number of fine apertures 22 for allowing the vapor deposition material to pass therethrough as desired are processed and formed in a predetermined pattern. The shape of the fine opening 22 formed in the vapor deposition metal layer 16 is rectangular in the illustrated example, but may be a slot or slit.
[0027]
The supporting metal layer 18 forms a surface on the evaporation source side during the evaporation process, and the supporting metal layer 18 has a frame portion in a region other than the formation region of the fine hole portion 22 in the evaporation metal layer 16. A large opening 26 for allowing the vapor deposition material to pass therethrough is formed so that 24 remains. The supporting metal layer 18 is used to support the deposition metal layer 16 so as to reinforce the metal plate 16 while ensuring the thickness of the thin plate member 12 as a whole. Therefore, the thickness of the supporting metal layer 18 is preferably larger than the thickness of the vapor-depositing metal layer 16. On the other hand, the numerous fine apertures 22 formed in the vapor deposition metal layer 16 are for allowing vapor deposition material deposited in a desired pattern to pass through the surface of the substrate. For this purpose, it is preferable to make the thickness of the vapor deposition metal layer 16 as thin as possible. For example, the thickness of the vapor deposition metal layer 16 is preferably in the range of 5 μm to 50 μm, and the thickness of the support metal layer 18 is preferably in the range of 20 μm to 300 μm. As will be described later, the fine opening portion 22 of the vapor deposition metal layer 16 and the opening portion 26 of the support metal layer 18 are formed by photoetching. The vapor deposition metal layer 16 and the support metal layer 18 are each formed of an etchable metal material such as Fe / Ni (iron / nickel) alloy such as Fe (iron) or Invar alloy.
[0028]
An intermediate layer 20 is interposed between the vapor deposition metal layer 16 and the support metal layer 18. The intermediate layer 20 remains between the vapor deposition metal layer 16 and the support metal layer 18 as a result of producing a thin plate material 12 by performing a photoetching method as described later on a thin plate material having a three-layer structure. The support metal layer 18 has a plane and a cross-sectional shape from which a portion corresponding to the opening 26 is removed. The intermediate layer 20 is formed of a material having etching resistance and solubility in a predetermined chemical solution other than the etching solution. As such a material, for example, Ti (titanium) or a resin material that can be dissolved in an alkaline liquid such as caustic soda is used.
[0029]
The material for forming the intermediate layer 20 will be described in more detail. Examples of the metal material include etching resistance and adhesion to a metal material for forming the vapor deposition metal layer 16 and the support metal layer 18, such as 36Ni iron alloy. From this point of view, Ti is preferable. As a method of manufacturing a thin plate material having a three-layer structure in which an intermediate layer made of Ti is interposed between a first metal layer forming a vapor deposition metal layer 16 and a second metal layer forming a support metal layer 18 For example, a method in which Ti is formed between two metal thin plates by a vacuum deposition method, an ion plating method, a sputtering method or the like, and at the same time, the two metal thin plates and the Ti thin film are strongly pressure-bonded. Is adopted. Ti that forms the intermediate layer of the thin plate material thus manufactured can be dissolved using an ammonium fluoride-based or caustic soda-based thin film solution.
[0030]
Further, as the resin material, a heat-crosslinking type synthetic resin or natural resin that is soluble in an alkaline thin film solution and does not dissolve in the etching solution is used. More specifically, an acrylic film resist generally called a dry film is preferable because it can be used easily. In order to produce a thin plate material having a three-layer structure using this acrylic film-like resist, the film-like resist is sandwiched between two metal thin plates and laminated and thermally cured. The acrylic film-like resist that forms the intermediate layer of the thin plate material thus manufactured can be dissolved using a caustic soda-based thin film solution. In addition, a soluble adhesive sheet other than the above is applied to one side of the two metal thin plates or a liquid adhesive is applied, and the other metal thin plate is joined via the adhesive sheet or adhesive. It is also possible to manufacture a thin plate material having a three-layer structure by strongly pressing. The adhesive sheet and adhesive forming the intermediate layer can be dissolved with a strong alkaline solution. In addition, a resist (non-photosensitive) agent is applied to one side of two metal thin plates, the other metal thin plate is joined via the resist agent, and they are pressure-contacted to form a three-layer thin plate material. May be manufactured. Such a resist agent can be dissolved using an alkali developer.
[0031]
This vapor deposition mask 10 is used when a low molecular organic EL material, an electrode forming material, a dielectric material, an insulator material, or the like is vapor-deposited in a predetermined pattern on the surface of a substrate. For example, in the manufacturing process of the organic EL display panel, after forming a transparent electrode layer such as ITO (indium tin oxide) on a transparent substrate (glass substrate), the metal for vapor deposition of the thin plate material 12 of this vapor deposition mask 10 The surface side of the layer 16 is aligned and adhered to the transparent electrode layer side of the transparent substrate, and a low molecular organic EL material is vapor-deposited on the transparent electrode layer through the fine apertures 22 of the thin plate material 12, and predetermined on the transparent electrode layer. An organic light emitting layer having a pattern is formed. When the organic light emitting layer is formed, a metal electrode layer is further formed on the organic light emitting layer to manufacture an organic EL display panel.
[0032]
The thin plate material 12 of the vapor deposition mask 10 shown in FIGS. 1 and 2 is manufactured by forming openings in each of the first metal layer and the second metal layer of the thin plate material having a three-layer structure by photoetching. Is done. 3 and 4, an example of a method for manufacturing a vapor deposition mask will be described in detail.
[0033]
First, as shown in FIG. 3A, a thin plate material 30 in which an intermediate layer 36 is interposed between a first metal layer 32 and a second metal layer 34 is prepared. The first metal layer 32 and the second metal layer 34 are formed of a metal material having a small thermal expansion such as an Invar alloy, iron-nickel, or cobalt alloy, and the intermediate layer 36 is made of titanium or a resin material as described above. Is formed. The thickness of the first metal layer 32 is, for example, 5 μm to 50 μm, and the thickness of the second metal layer 34 is, for example, 20 μm to 300 μm. As shown in FIG. 3B, a photoresist solution is applied to both surfaces of the thin plate material 30 and dried to form photoresist films 38 and 40 on both surfaces of the thin plate material 30, respectively.
[0034]
Next, as shown in FIG. 3C, an exposure mask 42 having a predetermined pattern corresponding to a large number of fine openings to be formed is formed on the surface of the first metal layer 32 of the thin plate material 30. A predetermined pattern is formed on the second metal layer 34 surface side of the thin plate material 30 so as to form a large opening portion so as to leave a frame portion in a region other than the formation region of the fine opening portion. An exposure mask 44 having the same is adhered. Then, the photoresist films 38 and 40 are respectively exposed through the exposure masks 42 and 44, and as shown in FIG. 3D, the photoresist films 38a and 40a are cured according to a predetermined pattern ( After insolubilization, as shown in FIG. 3E, development is performed to form corrosion resistant resist films 38b and 40b having a predetermined pattern on both surfaces of the thin plate material 30, respectively.
[0035]
Subsequently, by performing spray etching using an etching solution such as an aqueous ferric chloride solution, as shown in FIG. 4 (f), a fine hole 46 is formed in the first metal layer 32, and A large opening 48 is formed in the second metal layer 34 so as to leave a frame portion. Next, using a thin film solution such as caustic soda, as shown in FIG. 4G, the corrosion resistant resist films 38b and 40b are peeled off from both surfaces of the thin plate material 30, respectively. Further, by using a thin film solution such as caustic soda, as shown in FIG. 4 (h), the exposed portion of the intermediate layer 36 is dissolved and removed, so that the fine opening portion of the first metal layer 32 is removed. 46 and the opening part 48 of the 2nd metal layer 34 are connected, and the thin-plate material 50 is obtained. The thin plate member 50 thus manufactured is joined to one side of a rectangular support frame 52 as shown in FIG. 4 (i), whereby the vapor deposition mask 54 is completed. As the support frame 12, for example, a frame formed of stainless steel, Invar alloy, or the like is used.
[0036]
The operation of joining the thin plate member 50 to the support frame 52 is performed as follows, for example. That is, as shown in the perspective view of FIG. 5A, the thin plate material 50 is overlapped on one side of the support frame 52. At this time, as shown in FIG. 5B, the thin plate member 50 is superposed on one side of the support frame 52 so as to have tension only in the uniaxial direction. Then, as shown in FIG. 5C, the thin plate member 50 is integrally joined to one side of the support frame 52 while the thin plate member 50 is kept stretched. At this time, the pair of frame portions of the support frame 52 facing each other in the direction in which the tension is applied to the thin plate member 50 and both side portions of the thin plate member 50 are joined. Reference numeral 56 in the drawing is a joint portion between the support frame 52 and the thin plate member 50. The thin plate member 50 is joined to the support frame 52 by a method such as welding, for example, spot welding, or adhesion using an adhesive or an adhesive tape.
[0037]
Next, another example of the method for manufacturing the evaporation mask will be described with reference to FIGS.
[0038]
As shown in FIG. 6A, a thin plate material 30 in which an intermediate layer 36 is inserted between the first metal layer 32 and the second metal layer 34 is prepared. As shown in the figure, a photoresist solution is applied and dried to form photoresist films 38 and 40 on both surfaces of the thin plate material 30, respectively.
[0039]
Next, as shown in FIG. 6 (c), a large opening is made on the second metal layer 34 surface side of the thin plate material 30 so that the frame portion remains in the region other than the formation region of the fine hole portion. An exposure mask 44 having a predetermined pattern for forming a hole is brought into close contact. Then, the entire surface of the first metal layer 32 side of the thin plate material 30 is exposed as it is, and the second metal layer 34 side of the thin plate material 30 is exposed to the photoresist via the exposure mask 44. The film 40 is exposed, and as shown in FIG. 6D, the surface of the first metal layer 32 of the thin plate material 30 is cured (insolubilized) the photoresist film 38 entirely, so that the first metal A corrosion-resistant resist film 38c that covers the entire surface of the layer 32 is formed. On the other hand, the surface of the thin plate material 30 on the second metal layer 34 side is cured as shown in FIG. 6E after the photoresist film 40a is cured according to a predetermined pattern. A corrosion resistant resist film 40b having a predetermined pattern is formed on the surface of the second metal layer. Note that the surface of the first metal layer 32 of the thin plate material 30 is formed on the surface of the first metal layer 32 instead of forming a photoresist film 38 and then exposing the entire surface to form a corrosion-resistant resist film 38c. A suitable etching resistant film may be attached, and the etching resistant film may be peeled off from the surface of the first metal layer 32 after the etching described later.
[0040]
Subsequently, spray etching is performed using an etching solution such as a ferric chloride aqueous solution, so that the second metal layer 34 has a large opening so as to leave a frame portion as shown in FIG. A hole 48 is formed. Next, using a thin film solution such as caustic soda, the corrosion resistant resist film 40b is peeled from the surface of the second metal layer 34 of the thin plate material 30, as shown in FIG. Further, as shown in FIG. 7H, the exposed portion of the intermediate layer 36 is dissolved and removed using a thin film solution such as caustic soda.
[0041]
Next, as shown in FIG. 7I, a photosensitive solution is applied to the surface of the second metal layer 34 of the thin plate material 30 and dried, and an opening 48 is formed on the surface of the second metal layer 34. A photoresist film 58 filled inside is deposited. Subsequently, as shown in FIG. 7J, an exposure mask 42 having a predetermined pattern corresponding to a large number of fine apertures to be formed is formed on the surface of the second metal layer 34 of the thin plate material 30. Adhere closely. Then, the photoresist film 56 is exposed from the surface of the second metal layer 34 of the thin plate material 30 through the exposure mask 42, and as shown in FIG. 8K, the photoresist film 56a is formed according to a predetermined pattern. After curing (insolubilization), as shown in FIG. 8L, development is performed to form a corrosion-resistant resist film 58b having a predetermined pattern on the surface of the second metal layer 34 of the thin plate material 30.
[0042]
Subsequently, by performing spray etching using an etching solution such as an aqueous ferric chloride solution, the fine opening 60 is formed in the first metal layer 32 as shown in FIG. Next, using a thin film solution such as caustic soda, as shown in FIG. 8 (n), the corrosion resistant resist film 58b is peeled off from the surface of the second metal layer 34 of the thin plate material 30, thereby thin plate material 62. Is obtained. The thin plate material 62 produced in this way is joined to one side of a rectangular support frame 52 as shown in FIG.
[0043]
The vapor deposition mask 64 manufactured as described above is formed on the first metal layer 32 of the thin plate material 30 as shown in FIG. 9 which is an enlarged sectional view of the portion B in FIG. The cross section of the fine aperture portion 60 is a tapered surface, and is a surface that becomes a joint surface side with the support frame 52 (a surface that becomes a vapor deposition source side during the vapor deposition process, and is a lower surface in FIGS. 8 (o) and 9). ) Gradually decreases from the other surface (the upper surface in FIG. 8 (o) and FIG. 9). For example, a low molecular organic EL material is formed on a transparent electrode layer formed on a transparent substrate using a vapor deposition mask 64 provided with a thin plate material 62 in which a large number of fine apertures 60 having such a cross-sectional shape are formed. When the vapor deposition is performed, the surface of the thin plate material 62 on the side where the opening area of the fine hole portion 60 is small (the upper surface in FIG. 8 (o) and FIG. 9) faces the transparent electrode layer. Therefore, the low molecular organic EL material gas enters the large number of fine apertures 60 of the thin plate material 62 uniformly and satisfactorily. In addition, since the close contact between the opening edge of the fine hole portion 60 of the thin plate material 62 and the transparent electrode layer becomes good, the pattern shape of the organic light emitting layer defined by the opening edge of the fine hole portion 60 is accurately reproduced. There is an advantage such as.
[0044]
Next, still another example of the method for manufacturing the evaporation mask will be described with reference to FIGS. This manufacturing method is the same as the manufacturing method described above with reference to FIGS. 3 and 4 until the intermediate steps, that is, the steps shown in FIGS. 3A to 3E. Illustration and description are omitted.
[0045]
As shown in FIG. 3E, when the corrosion-resistant resist films 38b and 40b having a predetermined pattern are formed on both surfaces of the thin plate material 30, spray etching is performed using an etching solution such as a ferric chloride aqueous solution. As a result, as shown in FIG. 10 (f), the fine opening 46 is formed in the first metal layer 32. At this time, the second metal layer 34 is also partially etched in the thickness direction. However, since the thickness of the second metal layer 34 is larger than the thickness of the first metal layer 32, the first metal layer 32. When the fine opening 46 is formed, the etching is terminated, so that no opening that reaches the intermediate layer 36 is formed in the second metal layer 34. If the thickness of the first metal layer 32 and the thickness of the second metal layer 34 are not so different, an acid-resistant etching resistant film is attached to the surface of the second metal layer 34. Then, after the surface of the second metal layer 34 is protected, spray etching may be performed, and the etching resistant film may be peeled off from the surface of the second metal layer 34 after the etching is completed.
[0046]
When the fine opening 46 is formed in the first metal layer 32 of the thin plate material 30, as shown in FIG. 10G, the surface of the first metal layer 32 has a protective film 66 having etching resistance. Cover with. For example, the protective film 66 may be dried after an alkali-soluble evaporative drying resin is applied to the first metal layer 32 surface side, or an alkali-soluble ultraviolet curable resin is applied to the first metal layer 32 surface side. Then, it is formed by exposing with ultraviolet rays or attaching a protective adhesive film to the surface of the first metal layer 32. Next, spray etching is performed using an etching solution such as an aqueous solution of ferric chloride, so that the second metal layer 34 has a large opening so as to leave a frame portion as shown in FIG. A hole 48 is formed. Then, the resin film on the surface of the first metal layer 32 is dissolved using an alkaline solution, or the protective adhesive film is peeled off from the surface of the first metal layer 32, as shown in FIG. Then, the protective film 66 is peeled off from the first metal layer 32 surface. Subsequently, using a thin film solution such as caustic soda, the corrosion resistant resist films 38b and 40b are peeled off from both surfaces of the thin plate material 30, respectively, as shown in FIG. When the protective film 66 is formed using an alkali-soluble resin, the protective film 66 is removed from the surface of the first metal layer 32 and the both sides of the thin plate material 30 by using an alkaline solution such as caustic soda. The corrosion resistant resist films 38b and 40b are peeled in one step.
[0047]
Further, by using a thin film solution such as caustic soda, the exposed portion of the intermediate layer 36 is dissolved and removed as shown in FIG. 46 and the opening part 48 of the 2nd metal layer 34 are connected, and the thin-plate material 50 is obtained. The thin plate member 50 manufactured in this way is joined to one side of a rectangular support frame 52 as shown in FIG.
[0048]
According to this manufacturing method, the first metal layer 32 in which the fine opening 46 is formed is protected during the process, and the thin first metal layer 32 has defects such as folds and scratches. This can be prevented.
[0049]
In the above-described embodiment, a large number of fine apertures are formed in the metal layer for vapor deposition (first metal layer) of the thin plate material, and it is mainly used when depositing a low molecular organic EL material on the surface of the substrate. The vapor deposition mask and its manufacturing method have been described. For example, a solid aperture is formed in the vapor deposition metal layer (first metal layer) of the thin plate material, and the electrode forming material is vapor deposited on the surface of the substrate. The present invention can also be applied to vapor deposition masks used when forming electrodes.
[0050]
Further, in the above-described embodiment, after the thin plate material is manufactured by photoetching, the thin plate material is bonded to the support frame. However, before the thin plate material is etched, the thin plate material is bonded to the support frame, Etching may be applied to the thin plate material bonded to the substrate.
[0051]
【The invention's effect】
According to the method for manufacturing a vapor deposition mask of each of the inventions according to claims 1 to 3, it is possible to obtain a vapor deposition mask having high processing accuracy and good workability, and it can be folded into a thin plate material, deformed, etc. Can be prevented from occurring. According to this manufacturing method, even a large evaporation mask can be manufactured without hindrance.
[0052]
In the manufacturing method of the invention according to claim 4, it has a mask region in which a plurality of fine apertures having a predetermined pattern are formed, for example, vapor deposition used when depositing a low molecular organic EL material on the surface of a substrate Can be obtained with high processing accuracy.
[0053]
In the manufacturing method of the invention according to claim 5, a solid opening is formed, and for example, an evaporation mask used when forming an electrode by evaporating an electrode forming material on the surface of the substrate is processed with high processing. It can be obtained with accuracy.
[0054]
In the manufacturing method according to the sixth aspect of the present invention, the operation of joining the thin plate material to one side of the support frame is facilitated, and the dimensions of the aperture can be easily reproduced with high accuracy as designed.
[0055]
In the manufacturing method of the invention according to claim 7, the processing accuracy of the etching can be suitably improved, the handling property of the thin plate material becomes better, and there is less fear that the thin plate material breaks and a defect such as deformation occurs. Become.
[0056]
In the manufacturing method of each invention according to claim 8 and claim 9, the processing in each step of the manufacturing method of each invention according to claims 1 to 3 is executed reliably, and the above-mentioned effect is obtained.
[0057]
The vapor deposition mask of the invention according to claim 10 has high processing accuracy, good workability in the manufacturing process, and does not break into a thin plate material in the manufacturing process and does not cause defects such as deformation.
[0058]
Since the vapor deposition mask of the invention according to claim 11 has high processing accuracy, for example, a low-molecular organic EL material can be vapor-deposited well on the surface of the substrate to form a high-quality organic light-emitting layer.
[0059]
Since the vapor deposition mask of the invention according to claim 12 has high processing accuracy, it is possible to form a high-quality electrode by, for example, favorably vapor-depositing an electrode forming material on the surface of the substrate.
[0060]
In the vapor deposition mask according to the thirteenth aspect, the dimension of the opening is accurately reproduced as designed, and the work in the manufacturing process is easy.
[0061]
The vapor deposition mask of the invention according to the fourteenth aspect ensures high processing accuracy, improves the workability in the manufacturing process, and does not break into a thin plate material in the manufacturing process and does not cause defects such as deformation.
[Brief description of the drawings]
FIG. 1 shows an embodiment of the present invention, and shows a plan view of a vapor deposition mask together with a plan view enlarging a part thereof.
2 is a cross-sectional view schematically showing a part of a thin plate material of the vapor deposition mask shown in FIG. 1. FIG.
FIG. 3 is a view for explaining an example of a method of manufacturing a vapor deposition mask according to the present invention, and shows each step in a sectional view.
FIG. 4 is also a cross-sectional view showing each step.
FIG. 5 is a view for explaining an operation of joining a thin plate material to a support frame, and showing each step in a perspective view.
FIG. 6 is a view for explaining another example of the manufacturing method of the vapor deposition mask according to the present invention, and shows each step in a sectional view.
FIG. 7 is also a cross-sectional view showing each step.
FIG. 8 is also a cross-sectional view showing each step.
9 is a partially enlarged cross-sectional view of a thin plate material of a vapor deposition mask manufactured by the manufacturing method shown in FIGS. 6 to 8, and is an enlarged cross-sectional view of a portion B in FIG. 8 (o).
FIG. 10 is a view for explaining still another example of the method of manufacturing a vapor deposition mask according to the present invention, and shows each step in a sectional view.
FIG. 11 is a cross-sectional view showing each step.
[Explanation of symbols]
10, 54, 64 Deposition mask
12 Thin plate material
14 Mask area
16 Metal layer for vapor deposition
18 Supporting metal layer
20 Intermediate layer of thin plate
22 Fine opening
24 Frame of supporting metal layer
26 Opening part of supporting metal layer
30 sheet material
32 First metal layer
34 Second metal layer
36 Intermediate layer of thin plate material
38, 40, 58 Photoresist film
38b, 40b, 38c, 58b Corrosion resistant resist film
42, 44 Mask for exposure
46, 60 Fine hole portion of first metal layer
48 Opening part of second metal layer
50, 62 Thin plate material
52 Support frame
56 Junction between support frame and thin plate

Claims (14)

被蒸着面に蒸着材料を蒸着させる際に使用される蒸着用マスクの製造方法であって、
第１の金属層と第２の金属層とを、耐エッチング性を有しかつ所定薬液に対して溶解性を有する材料で形成された中間層を介挿させて積層した薄板素材を使用し、前記薄板素材を両面からエッチングして、前記第１の金属層に、蒸着材料を所望通りに通過させるための開孔部を形成するとともに、前記第２の金属層の、前記第１の金属層における前記開孔部の形成領域以外の領域内に枠部を残存させるように、蒸着材料を通過させるための開孔部を形成する工程と、
前記中間層の露出部分を所定薬液により溶解させて除去する工程と、
を備えたことを特徴とする蒸着用マスクの製造方法。A method for manufacturing a deposition mask used when depositing a deposition material on a deposition surface,
Using a thin plate material in which the first metal layer and the second metal layer are laminated with an intermediate layer formed of a material having etching resistance and solubility in a predetermined chemical solution, The thin plate material is etched from both sides to form openings in the first metal layer for allowing the vapor deposition material to pass as desired, and the first metal layer of the second metal layer. Forming a hole part for allowing the vapor deposition material to pass therethrough so that the frame part remains in a region other than the formation region of the hole part in
Dissolving and removing the exposed portion of the intermediate layer with a predetermined chemical solution;
A method for manufacturing a vapor deposition mask, comprising: 被蒸着面に蒸着材料を蒸着させる際に使用される蒸着用マスクの製造方法であって、
第１の金属層と第２の金属層とを、耐エッチング性を有しかつ所定薬液に対して溶解性を有する材料で形成された中間層を介挿させて積層した薄板素材を使用し、前記薄板素材を片面側からエッチングして、前記第２の金属層に、枠部を残存させるようにして、蒸着材料を通過させるための開孔部を形成する工程と、
前記と同一の片面側から前記中間層の露出部分を所定薬液により溶解させて除去する工程と、
前記薄板素材を、前記と同一の片面側からエッチングして、前記第１の金属層の、前記第２の金属層における前記開孔部の形成領域内に、蒸着材料を所望通りに通過させるための開孔部を形成する工程と、
を備えたことを特徴とする蒸着用マスクの製造方法。A method for manufacturing a deposition mask used when depositing a deposition material on a deposition surface,
Using a thin plate material in which the first metal layer and the second metal layer are laminated with an intermediate layer formed of a material having etching resistance and solubility in a predetermined chemical solution, Etching the thin plate material from one side to form a hole in the second metal layer for allowing the vapor deposition material to pass through so as to leave a frame portion;
Dissolving and removing the exposed portion of the intermediate layer with a predetermined chemical solution from the same one side as described above;
Etching the thin plate material from the same one side as described above, and allowing the vapor deposition material to pass through the formation region of the opening portion of the first metal layer in the second metal layer as desired. Forming a hole portion of
A method for manufacturing a vapor deposition mask, comprising: 被蒸着面に蒸着材料を蒸着させる際に使用される蒸着用マスクの製造方法であって、
第１の金属層と第２の金属層とを、耐エッチング性を有しかつ所定薬液に対して溶解性を有する材料で形成された中間層を介挿させて積層した薄板素材を使用し、前記薄板素材を片面側からもしくは両面からエッチングして、前記第１の金属層に、蒸着材料を所望通りに通過させるための開孔部を形成する工程と、
前記薄板素材の、前記開孔部が形成された第１の金属層面を、耐エッチング性を有する保護膜によって被覆する工程と、
前記第１の金属層面が保護膜によって被覆された前記薄板素材をエッチングして、前記第２の金属層の、前記第１の金属層における前記開孔部の形成領域以外の領域内に枠部を残存させるように、蒸着材料を通過させるための開孔部を形成する工程と、
前記薄板素材の第１の金属層面から前記保護膜を剥離して除去する工程と、
前記中間層の露出部分を所定薬液により溶解させて除去する工程と、
を備えたことを特徴とする蒸着用マスクの製造方法。A method for manufacturing a deposition mask used when depositing a deposition material on a deposition surface,
Using a thin plate material in which the first metal layer and the second metal layer are laminated by interposing an intermediate layer formed of a material having etching resistance and solubility in a predetermined chemical solution, Etching the thin plate material from one side or both sides to form an opening for allowing the vapor deposition material to pass through the first metal layer as desired; and
Covering the first metal layer surface of the thin plate material, in which the opening is formed, with a protective film having etching resistance;
The thin plate material whose first metal layer surface is covered with a protective film is etched, and a frame portion is formed in a region of the second metal layer other than a region where the opening is formed in the first metal layer. Forming a hole for allowing the vapor deposition material to pass therethrough,
Peeling and removing the protective film from the first metal layer surface of the thin plate material,
Dissolving and removing the exposed portion of the intermediate layer with a predetermined chemical solution;
A method for manufacturing a vapor deposition mask, comprising: 前記第１の金属層に形成される開孔部が、所定パターンを有する複数の微細開孔部である請求項１ないし請求項３のいずれかに記載の蒸着用マスクの製造方法。The method for manufacturing an evaporation mask according to any one of claims 1 to 3, wherein the opening portions formed in the first metal layer are a plurality of fine opening portions having a predetermined pattern. 前記第１の金属層に形成される開孔部が、べた状開孔部である請求項１ないし請求項３のいずれかに記載の蒸着用マスクの製造方法。The method for manufacturing a vapor deposition mask according to any one of claims 1 to 3, wherein the opening formed in the first metal layer is a solid opening. 前記第１の金属層および前記第２の金属層にそれぞれ開孔部が形成された薄板材を支持フレームの片面側に、薄板材の一軸方向のみに張りをもたせて接合する工程を備えた請求項１ないし請求項５のいずれかに記載の蒸着用マスクの製造方法。Claims comprising a step of joining a thin plate material having an opening formed in each of the first metal layer and the second metal layer to one side of a support frame with a tension only in one axial direction of the thin plate material. The manufacturing method of the mask for vapor deposition in any one of Claims 1 thru | or 5. 前記薄板素材の前記第２の金属層の厚みが前記第１の金属層の厚みより厚くされた請求項１ないし請求項６のいずれかに記載の蒸着マスクの製造方法。The manufacturing method of the vapor deposition mask in any one of Claim 1 thru | or 6 with which the thickness of the said 2nd metal layer of the said thin-plate raw material was made thicker than the thickness of the said 1st metal layer. 前記薄板素材の中間層がチタンで形成され、その中間層の露出部分がフッ化アンモニウム系または苛性ソーダ系の剥膜液により溶解させられて除去される請求項１ないし請求項７のいずれかに記載の蒸着マスクの製造方法。The intermediate layer of the thin plate material is formed of titanium, and an exposed portion of the intermediate layer is dissolved and removed by an ammonium fluoride-based or caustic soda-based stripping solution. Method for manufacturing a vapor deposition mask. 前記薄板素材の中間層が樹脂材で形成され、その中間層の露出部分が苛性ソーダ系の薄膜液により溶解させられて除去される請求項１ないし請求項７のいずれかに記載の蒸着マスクの製造方法。The vapor deposition mask according to any one of claims 1 to 7, wherein an intermediate layer of the thin plate material is formed of a resin material, and an exposed portion of the intermediate layer is dissolved and removed by a caustic soda-based thin film solution. Method. 被蒸着面に蒸着材料を蒸着させる際に使用される蒸着用マスクであって、
蒸着材料を所望通りに通過させるための開孔部がエッチングにより形成され被蒸着面に密接される蒸着用金属層と、
この蒸着用金属層における前記開孔部の形成領域以外の領域内に枠部を残存させるように、蒸着材料を通過させるための開孔部がエッチングにより形成され、前記蒸着用金属層を補強するように支持する支持用金属層と、
この支持用金属層における前記開孔部に対応する部分が溶解して除去され、その支持用金属層と前記蒸着用金属層との間に介挿された中間層と、
が積層された薄板材からなることを特徴とする蒸着用マスク。A deposition mask used when depositing a deposition material on the deposition surface,
A vapor deposition metal layer in which an opening for allowing the vapor deposition material to pass as desired is formed by etching and is in close contact with the deposition surface;
An opening for allowing the vapor deposition material to pass through is formed by etching so as to leave a frame portion in a region other than the region where the opening is formed in the metal layer for vapor deposition, thereby reinforcing the metal layer for vapor deposition. A supporting metal layer to support
A portion of the supporting metal layer corresponding to the opening is dissolved and removed, and an intermediate layer interposed between the supporting metal layer and the vapor deposition metal layer,
A vapor deposition mask characterized by comprising a thin plate material on which is laminated. 前記蒸着用金属層に形成された開孔部が、所定パターンを有する複数の微細開孔部である請求項１０記載の蒸着用マスク。The vapor deposition mask according to claim 10, wherein the apertures formed in the vapor deposition metal layer are a plurality of fine apertures having a predetermined pattern. 前記蒸着用金属層に形成された開孔部がべた状開孔部である請求項１０記載の蒸着用マスク。The vapor deposition mask according to claim 10, wherein the aperture portion formed in the vapor deposition metal layer is a solid aperture portion. 前記薄板材の一軸方向のみに張りをもたせて前記支持用金属層側に支持フレームが接合された請求項１０ないし請求項１２のいずれかに記載の蒸着用マスク。The vapor deposition mask according to claim 10, wherein a support frame is bonded to the side of the supporting metal layer with a tension only in one axial direction of the thin plate material. 前記薄板材の前記第２の金属層の厚みが前記第１の金属層の厚みより厚くされた請求項１０ないし請求項１３のいずれかに記載の蒸着マスク。The vapor deposition mask according to any one of claims 10 to 13, wherein a thickness of the second metal layer of the thin plate material is greater than a thickness of the first metal layer.
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