JP7413713B2 - Vapor deposition mask manufacturing method and vapor deposition mask - Google Patents

Description

The present disclosure relates to a method for manufacturing a vapor deposition mask and a vapor deposition mask.

Organic EL display devices are attracting attention as display devices used in portable devices such as smartphones and tablet PCs because of their good responsiveness, low power consumption, and high contrast. In this organic EL display device, a method is known in which pixels are formed in a desired pattern using a vapor deposition mask that includes through holes arranged in a desired pattern. Specifically, first, a substrate for an organic EL display device (organic EL substrate) is placed in a vapor deposition device, and then a vapor deposition mask is brought into close contact with the organic EL substrate in the vapor deposition device, and the organic material is applied to the organic EL display device. A vapor deposition process is performed to deposit the vapor onto the substrate.

Patent Document 1 discloses a vapor deposition mask including a metal sheet having a first surface and a second surface facing each other and having a plurality of through holes.

JP2009-074160A

In recent years, display devices are required to have even higher definition. In particular, head-mounted displays used for virtual reality etc. require high responsiveness and often use an organic EL method. For example, it is desired to realize a display device having a pixel density of 1200 ppi or more.

The present disclosure has been made in consideration of these points, and an object of the present disclosure is to provide a vapor deposition mask in which through holes are formed at high density, and a method for manufacturing the vapor deposition mask.

A first aspect of the present disclosure includes:
providing a first metal layer having a first surface and a second surface opposite the first surface;
forming a resin layer having a convex portion on the first surface of the first metal layer;
forming a second metal layer on the resin layer and on the first surface of the first metal layer;
polishing the second metal layer from the side opposite to the first metal layer;
forming, on the second surface of the first metal layer, a resist layer having an opening that at least partially overlaps with the resin layer in plan view;
etching the first metal layer to form a hole reaching the resin layer from the opening;
A method for manufacturing a vapor deposition mask, comprising: removing the resin layer and the resist layer.

In a second aspect of the present disclosure, in the first aspect described above, the first metal layer may include an iron-nickel alloy.

In a third aspect of the present disclosure, in the first or second aspect described above, the second metal layer may include an iron-nickel alloy.

In a fourth aspect of the present disclosure, in any one of the first to third aspects described above, the resin layer may include a positive resist.

In a fifth aspect of the present disclosure, in any one of the first to fourth aspects described above, the first metal layer may have a thickness of 15 μm or more and 100 μm or less.

In a sixth aspect of the present disclosure, in any one of the first to fifth aspects described above, the second metal layer may have a minimum thickness of 5 μm or more and 30 μm or less.

In a seventh aspect of the present disclosure, in any one of the first to sixth aspects described above, the resin layer may be formed by photolithography or nanoimprint.

An eighth aspect of the present disclosure is that in any one of the first to seventh aspects described above, the step of forming the second metal layer includes an electrolytic plating method, an electroless plating method, a physical vapor deposition method, It may be performed by at least one method selected from the group consisting of sputtering method and chemical vapor deposition method.

A ninth aspect of the present disclosure is that in any one of the first to seventh aspects described above, the step of forming the second metal layer comprises:
forming a seed layer on the resin layer and on the first surface of the first metal layer;
The method may also include a step of forming a main body layer on the seed layer by electrolytic plating or electroless plating.

A tenth aspect of the present disclosure is that in any one of the first to ninth aspects described above, in the step of forming the hole, the first metal layer is etched with a ferric chloride solution or hydrochloric acid. You can.

An eleventh aspect of the present disclosure is:
a first metal layer having holes;
a second metal layer having a through hole and an effective region overlapping the hole in a plan view; and a surrounding region located around the effective region and having a thickness larger than the minimum thickness of the effective region. It is a vapor deposition mask equipped with.

A twelfth aspect of the present disclosure is that in the eleventh aspect described above, the first metal layer may include an iron-nickel alloy.

A thirteenth aspect of the present disclosure is that in the eleventh or twelfth aspect described above, the second metal layer may include an iron-nickel alloy.

A fourteenth aspect of the present disclosure is that in any one of the eleventh to thirteenth aspects described above, the first metal layer may have a thickness of 15 μm or more and 100 μm or less.

A fifteenth aspect of the present disclosure is that in any one of the eleventh to fourteenth aspects described above, the second metal layer may have a minimum thickness of 5 μm or more and 30 μm or less.

According to embodiments of the present disclosure, it is possible to provide a vapor deposition mask in which through holes are formed at high density and a method for manufacturing the vapor deposition mask.

FIG. 1 is a diagram for explaining one embodiment of the present disclosure, and is a diagram for explaining a vapor deposition apparatus having a vapor deposition mask device. FIG. 2 is a cross-sectional view showing an example of an organic EL display device manufactured using the vapor deposition apparatus shown in FIG. FIG. 3 is a plan view schematically showing an example of a deposition mask device having a deposition mask. FIG. 4 is a partially enlarged view of the vapor deposition mask, and is a plan view showing an enlarged area surrounded by a dashed line labeled IV in FIG. FIG. 5 is a cross-sectional view taken along line VV in FIG. 4. FIG. 6 is a diagram showing one step of an example of a method for manufacturing a vapor deposition mask. FIG. 7 is a diagram showing one step of an example of a method for manufacturing a vapor deposition mask. FIG. 8 is a diagram showing one step of an example of a method for manufacturing a vapor deposition mask. FIG. 9 is a diagram showing one step of an example of a method for manufacturing a vapor deposition mask. FIG. 10 is a diagram showing one step of an example of a method for manufacturing a vapor deposition mask. FIG. 11 is a diagram showing one step of an example of a method for manufacturing a vapor deposition mask. FIG. 12 is a diagram showing one step of an example of a method for manufacturing a vapor deposition mask.

In this specification and the drawings, unless otherwise specified, terms such as "plate," "sheet," and "film" are not distinguished from each other based solely on the difference in designation. For example, "plate" is a concept that also includes members that can be called sheets or films. In addition, "surface (sheet surface, film surface)" refers to the target plate-shaped member (sheet-shaped member , a film-like member). Further, the normal direction used for a plate-shaped (sheet-shaped, film-shaped) member refers to the normal direction to the surface (sheet surface, film surface) of the member. Furthermore, terms such as "parallel" and "orthogonal" and values of length and angle used in this specification that specify shapes, geometric conditions, and their degrees are bound by strict meanings. The definition shall be interpreted to include the extent to which similar functions can be expected.

In this specification and the drawings, unless otherwise specified, terms such as "parallel" and "perpendicular", lengths and angles that specify shapes, geometrical conditions, and their degrees are used, unless otherwise specified. shall be interpreted to include the extent to which similar functions can be expected, without being bound by a strict meaning.

In this specification and the drawings, a certain structure such as a certain member or a certain region is "over (or below)" or "above (or below)" another structure such as another member or other region. )" or "above (or below)," unless otherwise specified, refers not only to cases in which a structure is in direct contact with another structure, but also to the relationship between one structure and another structure. The interpretation shall include cases where other configurations are included between the two. Further, unless there is a special explanation, the expressions "upper" (or "upper side" or "upper") or "lower" (or "lower side" or "lower side") may be used in the explanation, but the vertical direction may be reversed.

In this specification and the drawings, unless otherwise specified, the same parts or parts having similar functions will be denoted by the same or similar symbols, and repeated description thereof may be omitted. In addition, the dimensional ratios in the drawings may differ from the actual ratios for convenience of explanation, or a part of the structure may be omitted from the drawings.

In this specification and the drawings, unless otherwise specified, combinations may be made with other embodiments and modifications to the extent that no contradiction occurs. Further, other embodiments and other embodiments and modifications may be combined as long as no contradiction occurs. Furthermore, the modified examples may be combined with each other as long as no contradiction occurs.

In this specification and the drawings, unless otherwise specified, when multiple steps are disclosed for a method such as a manufacturing method, other undisclosed steps are not performed between the disclosed steps. You can. Further, the order of the disclosed steps is arbitrary as long as no contradiction occurs.

In this specification and the drawings, unless otherwise specified, a numerical range expressed by the symbol "~" includes the numbers placed before and after the symbol "~". For example, the numerical range defined by the expression "34-38 mass%" is the same as the numerical range defined by the expression "34 mass% or more and 38 mass% or less."

In one embodiment of this specification, an example of a vapor deposition mask used for patterning an organic material on a substrate in a desired pattern when manufacturing an organic EL display device and a method for manufacturing the same will be described. However, the present embodiment is not limited to such application, and can be applied to vapor deposition masks used for various purposes.

Hereinafter, one embodiment of the present disclosure will be described in detail with reference to the drawings. Note that the embodiments shown below are examples of the embodiments of the present disclosure, and the present disclosure is not to be interpreted as being limited to only these embodiments.

A first aspect of the present disclosure includes:
providing a first metal layer having a first surface and a second surface opposite the first surface;
forming a resin layer having a convex portion on the first surface of the first metal layer;
forming a second metal layer on the resin layer and on the first surface of the first metal layer;
polishing the second metal layer from the side opposite to the first metal layer;
forming, on the second surface of the first metal layer, a resist layer having an opening that at least partially overlaps with the resin layer in plan view;
etching the first metal layer to form a hole reaching the resin layer from the opening;
A method for manufacturing a vapor deposition mask, comprising: removing the resin layer and the resist layer.

In a second aspect of the present disclosure, in the first aspect described above, the first metal layer may include an iron-nickel alloy.

In a third aspect of the present disclosure, in the first or second aspect described above, the second metal layer may include an iron-nickel alloy.

In a fourth aspect of the present disclosure, in any one of the first to third aspects described above, the resin layer may include a positive resist.

In a fifth aspect of the present disclosure, in any one of the first to fourth aspects described above, the first metal layer may have a thickness of 15 μm or more and 100 μm or less.

In a sixth aspect of the present disclosure, in any one of the first to fifth aspects described above, the second metal layer may have a minimum thickness of 5 μm or more and 30 μm or less.

In a seventh aspect of the present disclosure, in any one of the first to sixth aspects described above, the resin layer may be formed by photolithography or nanoimprint.

An eighth aspect of the present disclosure is that in any one of the first to seventh aspects described above, the step of forming the second metal layer includes an electrolytic plating method, an electroless plating method, a physical vapor deposition method, It may be performed by at least one method selected from the group consisting of sputtering method and chemical vapor deposition method.

A ninth aspect of the present disclosure is that in any one of the first to seventh aspects described above, the step of forming the second metal layer comprises:
forming a seed layer on the resin layer and on the first surface of the first metal layer;
The method may also include a step of forming a main body layer on the seed layer by electrolytic plating or electroless plating.

A tenth aspect of the present disclosure is that in any one of the first to ninth aspects described above, in the step of forming the hole, the first metal layer is etched with a ferric chloride solution or hydrochloric acid. You can.

An eleventh aspect of the present disclosure is:
a first metal layer having holes;
a second metal layer having an effective region having a plurality of through holes and overlapping with the holes in a plan view; and a surrounding region located around the effective region and having a thickness larger than the minimum thickness of the effective region; , is a vapor deposition mask equipped with.

A twelfth aspect of the present disclosure is that in the eleventh aspect described above, the first metal layer may include an iron-nickel alloy.

A thirteenth aspect of the present disclosure is that in the eleventh or twelfth aspect described above, the second metal layer may include an iron-nickel alloy.

A fourteenth aspect of the present disclosure is that in any one of the eleventh to thirteenth aspects described above, the first metal layer may have a thickness of 15 μm or more and 100 μm or less.

A fifteenth aspect of the present disclosure is that in any one of the eleventh to fourteenth aspects described above, the second metal layer may have a minimum thickness of 5 μm or more and 30 μm or less.

A vapor deposition apparatus 90 including a vapor deposition mask 20 will be described with reference to FIG. FIG. 1 is a diagram showing a vapor deposition apparatus 90. The vapor deposition apparatus 90 performs a vapor deposition process to deposit a vapor deposition material 98 onto a target object. For example, the vapor deposition apparatus 90 may vapor deposit an organic material onto a substrate in a desired pattern when manufacturing the organic EL display device 100.

The vapor deposition apparatus 90 may include a vapor deposition source (for example, a crucible 94), a heater 96, and a vapor deposition mask device 10 therein. Further, the vapor deposition apparatus 90 may further include an exhaust means (not shown) for making the inside of the vapor deposition apparatus 90 a vacuum atmosphere. Crucible 94 may contain a deposited material 98, such as an organic light emitting material. The heater 96 may heat the crucible 94 to evaporate the deposition material 98 in a vacuum atmosphere. The vapor deposition mask device 10 may be arranged to face the crucible 94.

The vapor deposition mask device 10 may include a frame 15 and a vapor deposition mask 20 attached to the frame 15. The frame 15 supports the vapor deposition mask 20 in a state in which tension is applied in a direction parallel to the plane of the vapor deposition mask 20 (a state in which it is pulled in a direction parallel to the plane) so that the vapor deposition mask 20 does not bend. Good too. As shown in FIG. 1, the vapor deposition mask device 10 is arranged within the vapor deposition device 90 so that the vapor deposition mask 20 faces a deposition target substrate (for example, an organic EL substrate) 92, which is an object to which a vapor deposition material 98 is attached. You can. In the following description, among the surfaces of the vapor deposition mask 20, the surface on the organic EL substrate 92 side will be referred to as a first surface 20a, and the surface located on the opposite side of the first surface 20a will be referred to as a second surface 20b.

The vapor deposition mask device 10 may include a magnet 93 placed on the surface of the organic EL substrate 92 on the side opposite to the vapor deposition mask 20, as shown in FIG. By providing the magnet 93, the vapor deposition mask 20 can be drawn toward the magnet 93 by magnetic force, and the vapor deposition mask 20 can be brought into close contact with the organic EL substrate 92. Alternatively, the vapor deposition mask 20 may be brought into close contact with the organic EL substrate 92 using an electrostatic chuck that utilizes electrostatic force (Coulomb force).

FIG. 2 is a cross-sectional view showing an organic EL display device 100 manufactured using the vapor deposition apparatus 90 of FIG. The organic EL display device 100 may include a deposition target substrate (organic EL substrate) 92 and pixels including a patterned deposition material 98. Note that in the organic EL display device 100 of FIG. 2, electrodes and the like for applying voltage to pixels containing the vapor deposition material 98 are omitted. Further, after the vapor deposition step of forming the vapor deposition material 98 in a pattern on the organic EL substrate 92, the organic EL display device 100 of FIG. 2 may be further provided with other components of the organic EL display device. Therefore, the organic EL display device 100 in FIG. 2 can also be called an intermediate of organic EL display devices.

FIG. 3 is a plan view schematically showing an example of the vapor deposition mask device 10 having the vapor deposition mask 20, and is a diagram showing the vapor deposition mask device 10 viewed from the second surface 20b side of the vapor deposition mask 20. FIG. 4 is a partially enlarged view of the vapor deposition mask 20, and is a plan view showing an enlarged area surrounded by a dashed line labeled IV in FIG. In the illustrated example, the deposition mask device 10 may include a frame 15 having a rectangular profile and a deposition mask 20 attached to the frame 15. Vapor deposition mask 20 may include a metal plate in which a plurality of through holes 25 passing through vapor deposition mask 20 are formed.

In the illustrated example, the vapor deposition mask 20 may have a rectangular outline in plan view, and more precisely, a rectangular outline in plan view. The vapor deposition mask 20 may include an effective region 22 in which through holes 25 are formed in a regular arrangement, and a peripheral region 23 surrounding the effective region 22. The vapor deposition mask 20 has a plurality of effective regions 22, and the plurality of effective regions 22 may be arranged at a predetermined pitch along two directions perpendicular to each other. In the illustrated example, one effective area 22 may correspond to one organic EL display device. That is, according to the illustrated vapor deposition mask device 10, multi-sided vapor deposition on the substrate to be vaporized may be possible. The peripheral portion of the vapor deposition mask 20 may be attached to the frame 15 by spot welding, for example.

The effective area 22 includes a plurality of through holes through which the deposition material 98 (for example, an organic light-emitting material) is allowed to pass when depositing the deposition material 98 (for example, an organic light-emitting material) onto a deposition target substrate (for example, an organic EL substrate 92). The holes 25 may be formed in a desired pattern. As shown in FIG. 1, in this vapor deposition mask device 10, the vapor deposition mask 20 is supported within the vapor deposition device 90 so that the first surface 20a of the vapor deposition mask 20 faces the lower surface of the substrate to be vapor deposited. It may be used to deposit a deposition material 98 onto a substrate. In the example shown in FIG. 1, the vapor deposition material 98 that has evaporated from the crucible 94 and reached the vapor deposition mask device 10 may pass through the through hole 25 of the vapor deposition mask 20 and adhere to the organic EL substrate 92. Thereby, the vapor deposition material 98 can be deposited on the surface of the organic EL substrate 92 in a desired pattern corresponding to the positions of the through holes 25 of the vapor deposition mask 20.

Note that if it is desired to perform color display using a plurality of colors, it is also possible to prepare vapor deposition apparatuses 90 each equipped with a vapor deposition mask 20 corresponding to each color, and to sequentially feed the organic EL substrates 92 into each vapor deposition apparatus 90. . Thereby, for example, an organic light emitting material for red, an organic light emitting material for green, and an organic light emitting material for blue can be sequentially deposited on the organic EL substrate 92.

FIG. 5 is a cross-sectional view taken along line VV in FIG. 4. The vapor deposition mask 20 may include a first metal layer 31 and a second metal layer 35 having a plurality of through holes 25.

The first metal layer 31 may be a layer made of a rolled metal plate (rolled metal layer). The first metal layer 31 functions as a support layer that supports the second metal layer 35. As shown in FIG. 5, the first metal layer 31 has a first surface 31a facing the second metal layer 35 side and a second surface 31b facing the opposite side to the first surface 31a. You can. The second surface 31b of the first metal layer 31 may form part of the second surface 20b of the vapor deposition mask 20.

The thickness of the first metal layer 31 may be, for example, 15 μm or more, 20 μm or more, 25 μm or more, or 30 μm or more. Further, the thickness of the first metal layer 31 may be, for example, 70 μm or less, 80 μm or less, 90 μm or less, or 100 μm or less. The thickness range of the first metal layer 31 may be defined by a first group consisting of 15 μm, 20 μm, 25 μm and 30 μm, and/or a second group consisting of 70 μm, 80 μm, 90 μm and 100 μm. The thickness range of the first metal layer 31 is determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. You can. The thickness range of the first metal layer 31 may be determined by a combination of any two of the values included in the first group described above. The thickness range of the first metal layer 31 may be determined by a combination of any two of the values included in the second group described above. For example, it may be 15 μm or more and 100 μm or less, 15 μm or more and 90 μm or less, 15 μm or more and 80 μm or less, 15 μm or more and 70 μm or less, or 15 μm or more and 30 μm or less. Often, it may be 15 μm or more and 25 μm or less, 15 μm or more and 20 μm or less, 20 μm or more and 100 μm or less, 20 μm or more and 90 μm or less, or 20 μm or more and 80 μm or less. Often, it may be 20 μm or more and 70 μm or less, 20 μm or more and 30 μm or less, 20 μm or more and 25 μm or less, 25 μm or more and 100 μm or less, or 25 μm or more and 90 μm or less. Often, it may be 25 μm or more and 80 μm or less, 25 μm or more and 70 μm or less, 25 μm or more and 30 μm or less, 30 μm or more and 100 μm or less, or 30 μm or more and 90 μm or less. Often, it may be 30 μm or more and 80 μm or less, 30 μm or more and 70 μm or less, 70 μm or more and 100 μm or less, 70 μm or more and 90 μm or less, or 70 μm or more and 80 μm or less. It may be 80 μm or more and 100 μm or less, 80 μm or more and 90 μm or less, or 90 μm or more and 100 μm or less.

The first metal layer 31 may have a hole 33 passing through the first metal layer 31 in the thickness direction. The hole 33 may be formed as a through hole connecting the first surface 31a and the second surface 31b of the first metal layer 31. The holes 33 may be provided corresponding to each effective region 22 of the vapor deposition mask 20. That is, the first metal layer 31 may have one hole 33 corresponding to one effective region 22 of the vapor deposition mask 20. As shown in FIG. 4, the hole 33 may have a rectangular outline in plan view. It goes without saying that "rectangle" includes "square." Moreover, the outline of the hole 33 is not limited to this, and may have a polygonal shape such as a triangle, quadrangle, pentagon, or hexagon, or other shape such as a circle or an ellipse when viewed from above. In addition, in this specification, "rectangle," "square," "triangle," "quadrilateral," "pentagon," "hexagon," and "polygon" refer to the "rectangle," "square," and "triangle." , "quadrilateral," "pentagon," "hexagon," and "polygon" whose corners are rounded or cut off.

In this embodiment, the first metal layer 31 may be arranged between two adjacent effective regions 22 . Thereby, sufficient strength of the vapor deposition mask 20 can be ensured. That is, since the first metal layer 31 disposed between two adjacent effective areas 22 supports the second metal layer 35, the second metal layer 35 may bend due to the action of gravity or bend due to the action of external force. Deformation of the second metal layer 35 can be suppressed.

As the metal constituting the first metal layer 31, for example, an iron-nickel alloy may be used.

The second metal layer 35 may have a first surface 35a facing away from the first metal layer 31 and a second surface 35b facing the first metal layer 31 side. In this embodiment, the first surface 35a of the second metal layer 35 forms the first surface 20a of the vapor deposition mask 20, and the portion of the second surface 35b exposed in the hole 33 forms the second surface 20b of the vapor deposition mask 20. may form part of the The second metal layer 35 may have a plurality of through holes 25 in a region (effective region 22) overlapping with the holes 33 of the first metal layer 31 in plan view. The through hole 25 may be a through hole intended for the evaporated deposition material 98 to pass through and adhere to the deposition target substrate 92 . In the example shown in FIG. 4, each through hole 25 has a rectangular outline, but the outline is not limited to this. It can have an outline of a shape. For example, the outline of the through hole 25 may be a polygon such as a triangle, a quadrangle, a pentagon, or a hexagon, or may have another shape such as a circle or an ellipse. As shown in FIG. 4, the plurality of through holes 25 formed in each effective area 22 may be arranged at a predetermined pitch in two directions perpendicular to each other in the effective area 22. . Note that the plurality of through holes 25 can be arranged in any pattern in the effective area 22. Such second metal layer 35 may be a layer formed by electroless plating, that is, a plating layer.

The arrangement pitch of the through holes 25 may be, for example, 5 μm or more, 10 μm or more, 15 μm or more, or 20 μm or more. Further, the arrangement pitch of the through holes 25 may be, for example, 30 μm or less, 35 μm or less, 40 μm or less, or 45 μm or less. The range of the arrangement pitch of the through holes 25 may be determined by a first group consisting of 5 μm, 10 μm, 15 μm, and 20 μm, and/or a second group consisting of 30 μm, 35 μm, 40 μm, and 45 μm. The range of the arrangement pitch of the through holes 25 may be determined by a combination of any one of the values included in the above-mentioned first group and any one of the values included in the above-mentioned second group. good. The range of the arrangement pitch of the through holes 25 may be determined by a combination of any two of the values included in the first group described above. The range of the arrangement pitch of the through holes 25 may be determined by a combination of any two of the values included in the above-mentioned second group. For example, it may be 5 μm or more and 45 μm or less, 5 μm or more and 40 μm or less, 5 μm or more and 35 μm or less, 5 μm or more and 30 μm or less, or 5 μm or more and 20 μm or less. Often, it may be 5 μm or more and 15 μm or less, 5 μm or more and 10 μm or less, 10 μm or more and 45 μm or less, 10 μm or more and 40 μm or less, or 10 μm or more and 35 μm or less. Often, it may be 10 μm or more and 30 μm or less, 10 μm or more and 20 μm or less, 10 μm or more and 15 μm or less, 15 μm or more and 45 μm or less, or 15 μm or more and 40 μm or less. Often, it may be 15 μm or more and 35 μm or less, 15 μm or more and 30 μm or less, 15 μm or more and 20 μm or less, 20 μm or more and 45 μm or less, or 20 μm or more and 40 μm or less. Often, it may be 20 μm or more and 35 μm or less, 20 μm or more and 30 μm or less, 30 μm or more and 45 μm or less, 30 μm or more and 40 μm or less, or 30 μm or more and 35 μm or less. Generally, the thickness may be 35 μm or more and 45 μm or less, 35 μm or more and 40 μm or less, or 40 μm or more and 45 μm or less.

The maximum dimension of the through hole 25 in the direction parallel to the plane of the second metal layer 35 may be, for example, 3 μm or more, 5 μm or more, 10 μm or more, or 15 μm or more. You can. Further, the maximum dimension of the through hole 25 in the direction parallel to the plane of the second metal layer 35 may be, for example, 25 μm or less, 30 μm or less, 35 μm or less, or 40 μm or less. It may be. The range of the maximum dimension of the through holes 25 in the direction parallel to the plane of the second metal layer 35 is a first group consisting of 3 μm, 5 μm, 10 μm and 15 μm, and/or a second group consisting of 25 μm, 30 μm, 35 μm and 40 μm. It may be determined by the group. The range of the maximum dimension of the through hole 25 in the direction parallel to the plane of the second metal layer 35 is any one of the values included in the above-mentioned first group and the values included in the above-mentioned second group. may be determined in combination with any one of the following. The range of the maximum dimension of the through hole 25 in the direction parallel to the plane of the second metal layer 35 may be determined by a combination of any two of the values included in the above-mentioned first group. The range of the maximum dimension of the through hole 25 in the direction parallel to the plane of the second metal layer 35 may be determined by a combination of any two of the values included in the above-mentioned second group. For example, it may be 3 μm or more and 40 μm or less, 3 μm or more and 35 μm or less, 3 μm or more and 30 μm or less, 3 μm or more and 25 μm or less, or 3 μm or more and 15 μm or less. Often, it may be 3 μm or more and 10 μm or less, 3 μm or more and 5 μm or less, 5 μm or more and 40 μm or less, 5 μm or more and 35 μm or less, or 5 μm or more and 30 μm or less. Often, it may be 5 μm or more and 25 μm or less, 5 μm or more and 15 μm or less, 5 μm or more and 10 μm or less, 10 μm or more and 40 μm or less, or 10 μm or more and 35 μm or less. Often, it may be 10 μm or more and 30 μm or less, 10 μm or more and 25 μm or less, 10 μm or more and 15 μm or less, 15 μm or more and 40 μm or less, or 15 μm or more and 35 μm or less. Often, it may be 15 μm or more and 30 μm or less, 15 μm or more and 25 μm or less, 25 μm or more and 40 μm or less, 25 μm or more and 35 μm or less, or 25 μm or more and 30 μm or less. Generally, the thickness may be 30 μm or more and 40 μm or less, 30 μm or more and 35 μm or less, or 35 μm or more and 40 μm or less.

The thickness of the second metal layer 35 in the area including the plurality of through holes 25 in the effective area 22 is smaller than the thickness of the second metal layer 35 in an area not including the through holes 25 adjacent to the surrounding area 23. Good too. The second metal layer 35 in the effective region 22 may have a minimum thickness T _min in the region including the plurality of through holes 25 . In this case, the occurrence of shadows can be effectively suppressed. Note that "shadow" here means that the path of the evaporation material 98 toward the substrate 92 to be evaporated along the direction inclined with respect to the normal direction of the evaporation mask 20 is the second metal layer around the through hole 25. 35, and the vapor deposition material 98 is not properly attached to the substrate 92 to be vapor deposited.

The minimum thickness T _min of the second metal layer 35 in the effective area 22 may be smaller than the thickness T 23 of the second metal layer ₃₅ in the peripheral area 23 . In other words, the peripheral region 23 may have a thickness T ₂₃ greater than the minimum thickness T _min of the effective region 22. In this case, it becomes possible to appropriately ensure the strength of the second metal layer 35 in the peripheral region 23 while suppressing the occurrence of shadows.

The minimum thickness T _min of the second metal layer 35 may be, for example, 5 μm or more, 8 μm or more, 10 μm or more, or 13 μm or more. Further, the minimum thickness T _min of the second metal layer 35 may be, for example, 15 μm or less, 20 μm or less, 25 μm or less, or 30 μm or less. The range of the minimum thickness T _min of the second metal layer 35 may be defined by a first group consisting of 5 μm, 8 μm, 10 μm and 13 μm, and/or a second group consisting of 15 μm, 20 μm, 25 μm and 30 μm. . The range of the minimum thickness T _min of the second metal layer 35 is a combination of any one of the values included in the above-mentioned first group and any one of the values included in the above-mentioned second group. may be determined by The range of the minimum thickness T _min of the second metal layer 35 may be determined by a combination of any two of the values included in the first group described above. The range of the minimum thickness T _min of the second metal layer 35 may be determined by a combination of any two of the values included in the second group described above. For example, it may be 5 μm or more and 30 μm or less, 5 μm or more and 25 μm or less, 5 μm or more and 20 μm or less, 5 μm or more and 15 μm or less, or 5 μm or more and 13 μm or less. Often, it may be 5 μm or more and 10 μm or less, 5 μm or more and 8 μm or less, 8 μm or more and 30 μm or less, 8 μm or more and 25 μm or less, or 8 μm or more and 20 μm or less. Often, it may be 8 μm or more and 15 μm or less, 8 μm or more and 13 μm or less, 8 μm or more and 10 μm or less, 10 μm or more and 30 μm or less, or 10 μm or more and 25 μm or less. Often, it may be 10 μm or more and 20 μm or less, 10 μm or more and 15 μm or less, 10 μm or more and 13 μm or less, 13 μm or more and 30 μm or less, or 13 μm or more and 25 μm or less. Often, it may be 13 μm or more and 20 μm or less, 13 μm or more and 15 μm or less, 15 μm or more and 30 μm or less, 15 μm or more and 25 μm or less, or 15 μm or more and 20 μm or less. Generally, the thickness may be 20 μm or more and 30 μm or less, 20 μm or more and 25 μm or less, or 25 μm or more and 30 μm or less.

The thickness T ₂₃ of the second metal layer 35 in the peripheral region 23 may be, for example, 10 μm or more, 14 μm or more, 17 μm or more, or 19 μm or more. Further, the thickness T ₂₃ of the second metal layer 35 in the surrounding region 23 may be, for example, 20 μm or less, 24 μm or less, 27 μm or less, or 30 μm or less. good. The range of the thickness T ₂₃ of the second metal layer 35 in the peripheral region 23 is defined by a first group consisting of 10 μm, 14 μm, 17 μm and 19 μm and/or a second group consisting of 20 μm, 24 μm, 27 μm and 30 μm. You can. The range of the thickness T ₂₃ of the second metal layer 35 in the peripheral region 23 is any one of the values included in the above-mentioned first group and any one of the values included in the above-mentioned second group. It may also be determined by a combination of The range of the thickness T ₂₃ of the second metal layer 35 in the peripheral region 23 may be determined by a combination of any two of the values included in the first group described above. The range of the thickness T ₂₃ of the second metal layer 35 in the peripheral region 23 may be determined by a combination of any two of the values included in the second group described above. For example, it may be 10 μm or more and 30 μm or less, 10 μm or more and 27 μm or less, 10 μm or more and 24 μm or less, 10 μm or more and 20 μm or less, or 10 μm or more and 19 μm or less. Often, it may be 10 μm or more and 17 μm or less, 10 μm or more and 14 μm or less, 14 μm or more and 30 μm or less, 14 μm or more and 27 μm or less, or 14 μm or more and 24 μm or less. Often, it may be 14 μm or more and 20 μm or less, 14 μm or more and 19 μm or less, 14 μm or more and 17 μm or less, 17 μm or more and 30 μm or less, or 17 μm or more and 27 μm or less. Often, it may be 17 μm or more and 24 μm or less, 17 μm or more and 20 μm or less, 17 μm or more and 19 μm or less, 19 μm or more and 30 μm or less, or 19 μm or more and 27 μm or less. Often, it may be 19 μm or more and 24 μm or less, 19 μm or more and 20 μm or less, 20 μm or more and 30 μm or less, 20 μm or more and 27 μm or less, or 20 μm or more and 24 μm or less. Generally, the thickness may be 24 μm or more and 30 μm or less, 24 μm or more and 27 μm or less, or 27 μm or more and 30 μm or less.

The second surface 35b of the second metal layer 35 in the effective region 22 is inclined from the first metal layer 31 side toward the first surface 35a side as it goes from the peripheral region 23 side toward the center _C1 of the effective region 22. It may also include an inclined surface 37. The inclined surface 37 extends from the first metal layer 31 side to the first surface 35a side as it goes from the peripheral area 23 side to the through hole 25 closest to the peripheral area 23 among the plurality of through holes 25 included in the effective area 22. It may also be inclined towards. In this case, the thickness of the second metal layer 35 decreases continuously from the peripheral region 23 toward the center _C1 of the effective region 22. Note that, the present invention is not limited to this, and one or more steps are provided in a region of the second surface 35b in the effective region 22 that does not include the through hole 25 and is close to the surrounding region 23, so that the effective region 22 can be accessed from the surrounding region 23 side. The thickness of the second metal layer 35 may be made to gradually become smaller as it moves toward the center _C1 .

Note that "the thickness of the second metal layer 35 decreases (continuously or stepwise)" here refers to the overall cross-section of the second metal layer 35 along the normal direction. This means that the thickness of the second metal layer 35 becomes smaller from the peripheral region 23 toward the center _C1 of the effective region 22. Therefore, "the thickness of the second metal layer 35 decreases (continuously or stepwise)" means that the thickness of the second metal layer 35 decreases around the surrounding area as shown in FIG. This does not mean that it always continues to become smaller as it moves from the area 23 side toward the center _C1 of the effective area 22. In other words, even if the second metal layer 35 includes a portion where the thickness does not change or increases as it goes from the peripheral area 23 side toward the center _C1 of the effective area 22, the second metal layer 35 along the normal direction When looking at the cross section of the layer 35 as a whole, the thickness of the second metal layer 35 that can be said to decrease from the peripheral area 23 side toward the center _C1 of the effective area 22 is referred to here as the "thickness". 2, the thickness of the metal layer 35 decreases (continuously or stepwise).

The vapor deposition process may be performed inside the vapor deposition apparatus 90 in a high-temperature atmosphere. In this case, during the vapor deposition process, the vapor deposition mask 20 and organic EL substrate 92 held inside the vapor deposition apparatus 90 are also heated. At this time, the vapor deposition mask 20 and the organic EL substrate 92 exhibit dimensional change behavior based on their respective coefficients of thermal expansion. Therefore, when the difference between the thermal expansion coefficients of the vapor deposition mask 20 and the organic EL substrate 92 is small, the difference between the dimensional changes of the vapor deposition mask 20 and the organic EL substrate 92 is also small, and as a result, This is preferable because the dimensional accuracy and positional accuracy of the vapor deposition material deposited on the organic EL substrate 92 can be improved.

In order to obtain such an effect, the thermal expansion coefficient of the members constituting the vapor deposition mask 20 may have a value equivalent to the thermal expansion coefficient of the organic EL substrate 92. For example, when a glass substrate is used as the organic EL substrate 92, the main material of the frame 15 and vapor deposition mask 20 may be an iron alloy containing nickel, that is, an iron-nickel alloy. The iron-nickel alloy may further contain other components such as cobalt. For example, as a material of the metal plate constituting the frame 15 and the vapor deposition mask 20, the total content of nickel and cobalt is 30% by mass or more and 54% by mass or less, and the content of cobalt is 0% by mass or more and 6% by mass or less. You may use the iron alloy which is below % by mass. Specific examples of iron alloys containing nickel or nickel and cobalt include Invar material containing 34% by mass or more and 38% by mass or less of nickel, and super which further contains cobalt in addition to 30% by mass or more and 34% by mass or less of nickel. Invar material, low thermal expansion Fe--Ni alloy containing 38% by mass or more and 54% by mass or less of nickel, etc. can be mentioned.

Both the first metal layer 31 and the second metal layer 35 of this embodiment may contain an iron-nickel alloy. Thereby, the difference between the thermal expansion coefficient of the vapor deposition mask 20 of this embodiment and the thermal expansion coefficient of the vapor deposition target substrate 92 can be reduced. In this case, positional deviation between the deposition mask 20 and the deposition target substrate 92 due to a difference in dimensional change between the deposition mask 20 and the deposition target substrate 92 is suppressed, and the dimensional accuracy of the deposition material 98 deposited on the deposition target substrate 92 is improved. Deterioration in positional accuracy can be effectively suppressed.

Next, an example of a method for manufacturing the vapor deposition mask 20 described above will be described with reference to FIGS. 6 to 12. 6 to 12 are diagrams each showing one process of an example of a method for manufacturing the vapor deposition mask 20.

First, the first metal layer 31 is prepared (first metal layer preparation step). The first metal layer 31 may be a metal plate containing an iron-nickel alloy and manufactured by rolling. The first metal layer 31 may have a first surface 31a and a second surface 31b facing opposite to the first surface 31a.

Next, a resin layer 41 having convex portions 42 is formed on the first surface 31a of the first metal layer 31 (resin layer forming step). In this embodiment, a resin layer has a plurality of convex portions 42 in an effective region 22 having a shape and arrangement pattern corresponding to the shape and arrangement pattern of a plurality of through holes 25 to be formed in the effective region 22. 41 may be formed. In particular, the shape of the resin layer 41 may have a shape that at least partially complements the shape of the through hole 25 to be formed.

The resin layer 41 having the protrusions 42 may be formed using photolithography technology, for example. In this case, first, by applying a fluid photosensitive resin onto the first surface 31a of the first metal layer 31, or by applying a sheet-like photosensitive resin onto the first surface 31a of the first metal layer 31. By disposing it on the surface 31a, the resin layer 40 is formed on the first surface 31a of the first metal layer 31, as shown in FIG. Thereafter, the resin layer 40 may be temporarily cured, if necessary. As the photosensitive resin, resins having negative or positive photosensitivity can be used without particular limitation. As an example, a positive photosensitive resin may be used as the photosensitive resin. Such a photosensitive resin may be sensitized, for example, by ultraviolet light.

Next, the resin layer 40 is exposed to light to form a resin layer 41 having convex portions 42 from the resin layer 40 (see FIGS. 7 and 8). At this time, as shown in FIG. 7, the resin layer 40 may be exposed to light through a light shielding mask 50 capable of gradation exposure. The light-shielding mask 50 may include, for example, a light-transmitting substrate 52 and a light-shielding layer 54 formed on one surface of the substrate 52. The substrate 52 may be, for example, a glass plate. Further, the light shielding layer 54 may be a film made of metal such as chromium or molybdenum. The light shielding layer 54 may have a light shielding property corresponding to the thickness of the resin layer 41 to be formed. For example, when a positive photosensitive resin is used as the resin constituting the resin layer 40, the light shielding layer 54 has a thickness proportional to the thickness of the resin layer 41 to be formed. You can.

The resin layer 41 may include a plurality of convex portions 42. The resin layer 41 also has an inclined surface 43 on the opposite side of the first metal layer 31 that is inclined so as to be spaced apart from the first metal layer 31 side as it goes from the periphery of the resin layer 41 toward the center _C2 of the resin layer 41. May contain. The inclined surface 43 is inclined so as to move away from the first metal layer 31 side as it goes from the peripheral edge of the resin layer 41 toward the convex portion 42 closest to the peripheral edge of the resin layer 41 among the plurality of convex portions 42. Good too. In this case, the thickness of the resin layer 41 increases continuously from the periphery of the resin layer 41 toward the center _C2 of the resin layer 41. Note that the present invention is not limited to this, and one or more steps are provided in the region between the convex portion 42 and the peripheral edge of the surface of the resin layer 41 located on the opposite side of the first metal layer 31, and the peripheral edge of the resin layer 41 is provided with one or more steps. The thickness of the resin layer 41 may be made to increase stepwise from the center C2 toward the center _C2 of the resin layer 41. Note that the center _C2 of the resin layer 41 may coincide with the center _C1 of the effective area 22 of the vapor deposition mask 20 that is finally formed.

Note that "the thickness of the resin layer 41 increases (continuously or stepwise)" here means that the resin layer 41 increases in thickness when looking at the entire cross section of the resin layer 41 along the normal direction. This means that the thickness of 41 increases from the periphery of the resin layer 41 toward the center _C2 of the resin layer 41. Therefore, "the thickness of the resin layer 41 increases (continuously or stepwise)" means that the thickness of the resin layer 41 increases at the periphery of the resin layer 41 as shown in FIG. This does not mean that it always continues to increase in size as it approaches the center _C2 of the resin layer 41. In other words, even if there is a part where the thickness of the resin layer 41 does not change or decreases as it goes from the periphery of the resin layer 41 toward the center _C2 of the resin layer 41, the thickness of the resin layer 41 along the normal direction Looking at the cross section as a whole, the thickness of the resin layer 41 that can be said to increase from the periphery of the resin layer 41 toward the center _C2 of the resin layer 41 is the "thickness of the resin layer 41" herein. It is included in the category of "increasing in size (continuously or in stages)".

Note that the method for forming the resin layer 41 having the convex portions 42 is not limited to the method using the photolithography technique described above. The resin layer 41 is formed by, for example, molding a thermosetting resin, a photocurable resin, or the like onto the first surface 31a of the first metal layer 31 using nanoimprint technology or the like. Here, the cross-sectional shape of the convex portion 42 can be controlled by the cross-sectional shape of the plate used for shaping.

As the resin forming the resin layer 41, for example, a positive resist may be used.

After the resin layer 41 having the convex portions 42 shown in FIG. 8 is formed, as shown in FIG. 9, on the resin layer 41 and on the first surface 31a of the first metal layer 31, A second metal layer 35 is formed (second metal layer forming step). As a result, an inclined surface 37 having a shape that complements the inclined surface 43 of the resin layer 41 is formed on the second metal layer 35 . The second metal layer 35 is formed by, for example, forming a metal layer to serve as a seed layer on the resin layer 41 and the first surface 31a of the first metal layer 31 by sputtering, and then forming a metal layer on the seed layer. The metal layer serving as the main body layer may be formed by electrolytic plating. In this case, the second metal layer 35 is composed of a seed layer and a body layer. Note that the second metal layer 35 is not limited to this, and may be formed by forming a metal layer that will become the main body layer on the seed layer by electrolytic plating, or by electrolytic plating, electroless plating, etc. It may be formed as a single layer or a multilayer metal layer by a plating method, a physical vapor deposition method, a sputtering method, a chemical vapor deposition method (CVD method), or the like. The second metal layer 35 may be formed to completely cover all the convex portions 42 as shown in FIG. 9, or the tips of at least some of the convex portions 42 may be It may be formed to be exposed.

Next, as shown in FIG. 10, the second metal layer 35 is polished from the side opposite to the first metal layer 31 (polishing step). The second metal layer 35 may be polished until all the convex portions 42 of the resin layer 41 are exposed from the second metal layer 35 and the second metal layer 35 has a desired thickness. At this time, a part of the tip side of the convex portion 42 of the resin layer 41 may be polished together with the second metal layer 35. As a result, a through hole 25 having a shape that complements the convex portion 42 of the resin layer 41 is formed in the second metal layer 35 . The second metal layer 35 may be polished by, for example, mechanical polishing, chemical mechanical polishing, wet etching, dry etching, or a combination thereof. Note that as the final polishing in the polishing process, a polishing method used in a semiconductor planarization process, such as mechanical polishing or chemical mechanical polishing, may be used. In this case, uniformity of polishing depth can be achieved.

A first resist layer 44 is formed to cover the second metal layer 35 and the resin layer 41. Further, a second resist layer (resist layer) 45 is formed on the surface (second surface 31b) of the first metal layer 31 opposite to the second metal layer 35 (see FIG. 11, resist layer forming step). The first resist layer 44 is provided to prevent the second metal layer 35 from being eroded by an etching solution used in an etching process to be described later. Therefore, if the second metal layer 35 is prevented from being eroded by another method, the first resist layer 44 may be omitted. In this case, for example, in the etching process, the holes 33 are formed in such a way that the etching solution does not come into contact with the second metal layer 35. The second resist layer 45 has an opening 47 corresponding to the location where the hole 33 of the first metal layer 31 is to be formed. The opening 47 overlaps with the plurality of convex portions 42 of the resin layer 41 in plan view. In particular, the opening 47 overlaps all the convex portions 42 corresponding to one effective area 22 in plan view. The first resist layer 44 and the second resist layer 45 may be formed by, for example, pasting a resin sheet that is resistant to the etching solution used in the etching process, or applying a fluid resin material that has similar resistance. It can be formed by hardening. The opening 47 can be formed using, for example, photolithography technology.

Next, using the second resist layer 45 as a mask, the first metal layer 31 is etched to form a hole 33 (see FIG. 12, etching step). Specifically, the first metal layer 31 exposed in the opening 47 of the second resist layer 45 is brought into contact with an etching solution, and the first metal layer 31 is etched from the second surface 31b side toward the first surface 31a side. . This etching is continued at least until the holes 33 reach the resin layer 41 and the resin layer 41 is exposed inside the holes 33. As the etching solution, a ferric chloride solution or hydrochloric acid may be used.

By the way, in the etching process, as shown in FIG. 12, erosion due to etching occurs not only in the thickness direction (normal direction) of the first metal layer 31 but also in a direction parallel to the plane of the first metal layer 31. It also progresses. Therefore, in plan view, the dimensions of the hole 33 formed in the etching process are larger than the dimensions of the opening 47 in the second resist layer 45. Therefore, in consideration of the amount of erosion in the direction parallel to the plane of the first metal layer 31 during the etching process, the dimensions of the opening 47 are preferably set smaller than the dimensions of the hole 33 to be formed.

Finally, the resin layer 41, the first resist layer 44, and the second resist layer 45 are removed (removal step). Thereby, the through hole 25 of the second metal layer 35 and the hole 33 communicate with each other, and the vapor deposition mask 20 shown in FIG. 5 is obtained.

A method for manufacturing a vapor deposition mask according to the present disclosure includes a step of preparing a first metal layer 31 having a first surface 31a and a second surface 31b opposite to the first surface 31a; A step of forming a resin layer 41 having a convex portion 42 on the first surface 31a, and a step of forming a second metal layer 35 on the resin layer 41 and the first surface 31a of the first metal layer 31. and polishing the second metal layer 35 from the side opposite to the first metal layer 31; and forming an opening 47 on the second surface 31b of the first metal layer 31 that at least partially overlaps the resin layer 41 in plan view. a step of etching the first metal layer 31 to form a hole 33 reaching the resin layer 41 from the opening 47; and a step of removing the resin layer 41 and the resist layer 45. Equipped with

The vapor deposition mask 20 of the present disclosure includes a first metal layer 31 having a hole 33 , an effective region 22 having a through hole 25 and overlapping the hole 33 in a plan view, and a first metal layer 31 located around the effective region 22 and forming an effective region 22 . a second metal layer 35 having a peripheral region 23 having a thickness T ₂₃ greater than a minimum thickness T _min .

According to the method for manufacturing a vapor deposition mask and the vapor deposition mask 20, it is possible to arrange a plurality of fine convex portions 42 with high density, which define the arrangement, shape, and dimensions of the through hole 25. It becomes possible to arrange through-holes with high density. Therefore, using the vapor deposition mask 20 of this embodiment, it is possible to manufacture a high-definition organic EL display device 100 having a pixel density of 1200 ppi or more, for example. Furthermore, when forming a through hole using an etching process, the corners of the through hole tend to be rounded in plan view, but in this embodiment, the shape of the through hole 25 is determined by the shape of the convex portion 42. For example, by making the outline of the convex portion 42 rectangular in plan view, the outline of the through hole 25 in plan view can also be approximated to a rectangular shape.

Further, in the present embodiment, since the outline of the through hole 25 can be defined by the shape of the convex portion 42, it is possible to give the through hole 25 a highly accurate and stable outline.

In the method of forming through-holes using an etching process, it is conceivable to reduce the thickness of the metal sheet in order to improve the precision of the arrangement of the through-holes. However, when the metal sheet is made thinner, wrinkles and deformation tend to occur in the metal sheet when the metal sheet is transported. In contrast, in the present embodiment, the second metal layer 35 having the through holes 25 is formed on the first metal layer 31 that can support the second metal layer 35, so the vapor deposition mask 20 is transported. At this time, it is possible to effectively suppress wrinkles and deformation of the second metal layer 35.

In the method of forming a through hole using an etching process, a cross section of a hole formed from the first surface side and a hole formed from the second surface side in a cross section extending parallel to the normal direction of the metal sheet. The shape is a curved surface that is convex toward the inside of the metal sheet. Therefore, the cross-sectional area of the remaining metal sheet decreases, which may reduce the strength of the metal sheet. On the other hand, in the present embodiment, the shape of the through hole 25 can be defined by the shape of the convex part 42, so by appropriately controlling the shape of the convex part 42, the section of the second metal layer 35 can be The cross-sectional shape of the through hole 25 can be adjusted to increase the area. Therefore, the strength of the second metal layer 35 can be ensured sufficiently.

Further, since the first metal layer 31 supporting the second metal layer 35 can be placed between two adjacent effective regions 22, sufficient strength of the vapor deposition mask 20 can be ensured.

Claims (14)

providing a first metal layer having a first surface and a second surface opposite the first surface;
forming, on the first surface of the first metal layer, a resin layer having convex portions having a shape and arrangement pattern corresponding to the shape and arrangement pattern of through holes to be formed in the vapor deposition mask ;
forming a second metal layer on the resin layer and on the first surface of the first metal layer;
polishing the second metal layer from the side opposite to the first metal layer to expose the convex portion from the second metal layer ;
forming, on the second surface of the first metal layer, a resist layer having an opening that at least partially overlaps with the resin layer in plan view;
etching the first metal layer to form a hole reaching the resin layer from the opening;
A method for manufacturing a vapor deposition mask, comprising the step of removing the resin layer and the resist layer. The method for manufacturing a vapor deposition mask according to claim 1, wherein the first metal layer includes an iron-nickel alloy. The method for manufacturing a vapor deposition mask according to claim 1 or 2, wherein the second metal layer contains an iron-nickel alloy. The method for manufacturing a vapor deposition mask according to any one of claims 1 to 3, wherein the resin layer includes a positive resist. The method for manufacturing a vapor deposition mask according to any one of claims 1 to 4, wherein the first metal layer has a thickness of 15 μm or more and 100 μm or less. The method for manufacturing a vapor deposition mask according to any one of claims 1 to 5, wherein the second metal layer has a minimum thickness of 5 μm or more and 30 μm or less. 7. The method for manufacturing a vapor deposition mask according to claim 1, wherein the resin layer is formed by photolithography or nanoimprint. The step of forming the second metal layer is performed by at least one selected from the group consisting of electrolytic plating, electroless plating, physical vapor deposition, sputtering, and chemical vapor deposition. 7. The method for manufacturing a vapor deposition mask according to any one of 7. The step of forming the second metal layer includes:
forming a seed layer on the resin layer and on the first surface of the first metal layer;
The method for manufacturing a vapor deposition mask according to any one of claims 1 to 7, comprising the step of forming a main body layer on the seed layer by electrolytic plating or electroless plating. The method for manufacturing a vapor deposition mask according to any one of claims 1 to 9, wherein in the step of forming the hole, the first metal layer is etched with a ferric chloride solution or hydrochloric acid. a first metal layer having holes and having a thickness of 15 μm or more and 100 μm or less ;
a second metal layer having a through hole and an effective region overlapping the hole in a plan view; and a surrounding region located around the effective region and having a thickness larger than the minimum thickness of the effective region. Equipped with a vapor deposition mask. The vapor deposition mask according to claim 11, wherein the first metal layer includes an iron-nickel alloy. The vapor deposition mask according to claim 11 or 12, wherein the second metal layer contains an iron-nickel alloy. The vapor deposition mask according to any one of claims 11 to 13 , wherein the second metal layer has a minimum thickness of 5 μm or more and 30 μm or less.