TW202009602A - Fine metal mask and method for making the same - Google Patents

Fine metal mask and method for making the same Download PDF

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TW202009602A
TW202009602A TW107129191A TW107129191A TW202009602A TW 202009602 A TW202009602 A TW 202009602A TW 107129191 A TW107129191 A TW 107129191A TW 107129191 A TW107129191 A TW 107129191A TW 202009602 A TW202009602 A TW 202009602A
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layer
electroformed
patterned photoresist
metal mask
fine metal
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TWI669567B (en
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石清堉
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鋆洤科技股份有限公司
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Abstract

A fine metal mask has a central pattern portion and a reinforcement frame. The central pattern portion has a mask pattern. The reinforcement frame is connected with a peripheral edge of the central pattern portion. The reinforcement frame is thicker than the central pattern portion. The fine metal mask is made by electroforming process. A method of making the fine metal mask has the steps of: sputtering a metal layer on a glass substrate; electroforming the central pattern portion and the reinforcement frame on the metal layer; removing the metal layer and the glass substrate, so as to obtaining the fine metal mask. The fine metal mask is not easily to be deflected, has long lifetime, and is beneficial to enhance the yield of OLED.

Description

精細金屬遮罩及其製法Fine metal mask and its manufacturing method

本發明是關於一種精細金屬遮罩及其製法。The invention relates to a fine metal mask and its manufacturing method.

有機發光二極體(Organic Light-Emitting Diode, OLED)因具有自發光、廣視角、省電、高效率、反應時間及輕薄等優點,而被廣泛的應用於電子書、行動電話及顯示器等商品中。OLED包括玻璃基板、有機發光材料層及電極層,有機發光材料層配置於玻璃基板上,電極層配置於有機發光材料層上。其中,有機發光材料層是以蒸鍍的方式形成於玻璃基板上,而蒸鍍時使用的精細金屬遮罩的遮罩圖案不僅決定了有機發光材料層於玻璃基板上的配置位置,還決定了有機發光材料層的尺寸、精細度等,進而影響到OLED顯示器的像素高低。Organic Light-Emitting Diode (OLED) is widely used in e-books, mobile phones, displays and other products due to its advantages of self-luminescence, wide viewing angle, power saving, high efficiency, response time, and thinness and lightness. in. The OLED includes a glass substrate, an organic light-emitting material layer and an electrode layer. The organic light-emitting material layer is arranged on the glass substrate, and the electrode layer is arranged on the organic light-emitting material layer. Among them, the organic light-emitting material layer is formed on the glass substrate by evaporation, and the mask pattern of the fine metal mask used during evaporation not only determines the placement of the organic light-emitting material layer on the glass substrate, but also determines The size and fineness of the organic light-emitting material layer affect the pixel height of the OLED display.

為提高OLED顯示器的像素,習知技術於蒸鍍製程中使用精細金屬遮罩(Fine Metal Mask, FMM)形成有機發光材料層。習知技術的精細金屬遮罩的製造方式分為蝕刻法及電鑄法。由於蝕刻法存在可能過蝕、遮罩圖案鈍化等缺點,故相較於蝕刻法,電鑄法製的精細金屬遮罩的遮罩圖案的位置可較為準確且孔徑精度更可達到數個微米(μm)。In order to improve the pixels of the OLED display, the conventional technology uses a fine metal mask (FMM) to form an organic light-emitting material layer in the evaporation process. The manufacturing methods of the fine metal mask of the conventional technology are divided into an etching method and an electroforming method. Due to the shortcomings of the etching method, such as over-etching and passivation of the mask pattern, compared with the etching method, the position of the mask pattern of the fine metal mask made by electroforming can be more accurate and the aperture accuracy can reach several microns (μm ).

但是,電鑄法製的精細金屬遮罩的厚度相對較薄,整體結構強度較弱,而容易因外力產生撓曲,導致遮罩圖案於使用上無法精確對準預定設置有機發光材料層的位置的問題,進而影響精細金屬遮罩的使用壽命及OLED顯示器的良率。However, the thickness of the fine metal mask made by electroforming is relatively thin, and the overall structural strength is weak, and it is easy to deflect due to external forces, resulting in the mask pattern cannot be accurately aligned with the intended position of the organic light-emitting material layer in use. Problems, which in turn affect the service life of fine metal masks and the yield of OLED displays.

本發明提供一種精細金屬遮罩,不易因外力產生撓曲,使用壽命長且可提升OLED顯示器的良率。The invention provides a fine metal mask, which is not easy to deflect due to external force, has a long service life and can improve the yield of the OLED display.

本發明另提供一種精細金屬遮罩的製法,所製得的精細金屬遮罩不易因外力產生撓曲,使用壽命長且可提升OLED顯示器的良率。The invention also provides a method for manufacturing a fine metal mask. The manufactured fine metal mask is not easy to be flexed by external force, has a long service life and can improve the yield of the OLED display.

為達上述之一或多個目的,本發明所提供的精細金屬遮罩,包括中央圖案部以及強化外框。中央圖案部具有遮罩圖案。強化外框連接於中央圖案部的外緣。強化外框的厚度大於中央圖案部的厚度,且精細金屬遮罩是以電鑄製程製成。To achieve one or more of the above objectives, the fine metal mask provided by the present invention includes a central pattern portion and a reinforced outer frame. The central pattern part has a mask pattern. The reinforced outer frame is connected to the outer edge of the central pattern portion. The thickness of the reinforced outer frame is greater than the thickness of the central pattern portion, and the fine metal mask is made by an electroforming process.

在本發明的一實施例中,上述之中央圖案部更包括第一電鑄層的第一中央部,遮罩圖案形成於第一中央部上,且強化外框更包括第一電鑄層的第一周緣部及第二電鑄層,第一周緣部鄰接於第一中央部,第二電鑄層疊設於該第一周緣部上,第二電鑄層與第一中央部之間形成貫孔,貫孔連通遮罩圖案。In an embodiment of the present invention, the central pattern portion further includes a first central portion of the first electroformed layer, a mask pattern is formed on the first central portion, and the reinforced outer frame further includes the first electroformed layer The first peripheral part and the second electroformed layer, the first peripheral part is adjacent to the first central part, the second electroformed layer is stacked on the first peripheral part, the second electroformed layer and the first central part A through hole is formed between the two, and the through hole communicates with the mask pattern.

在本發明的一實施例中,上述之強化外框更包括第三電鑄層,第二電鑄層更包括第二中央部及第二周緣部,第二周緣部鄰接於第二中央部,第三電鑄層疊設於第二周緣部上,第三電鑄層與第二中央部之間形成透孔,透孔連通貫孔。In an embodiment of the invention, the above-mentioned reinforced outer frame further includes a third electroformed layer, the second electroformed layer further includes a second central portion and a second peripheral portion, the second peripheral portion is adjacent to the second central portion, The third electroformed laminate is provided on the second peripheral portion, and a through hole is formed between the third electroformed layer and the second central portion, and the through hole communicates with the through hole.

在本發明的一實施例中,上述之精細金屬遮罩的材料是選自於下列構成的群組:鐵、鈷、鎳及上述至少兩者的合金。In an embodiment of the present invention, the material of the above-mentioned fine metal mask is selected from the group consisting of iron, cobalt, nickel, and alloys of at least two of the above.

為達上述之一或多個目的,本發明所提供的精細金屬遮罩的製法,包括:濺鍍形成金屬層於玻璃基板上;以及電鑄形成中央圖案部及強化外框於金屬層上,並移除金屬層及玻璃基板,以獲得精細金屬遮罩。其中,強化外框連接於中央圖案部的外緣,中央圖案部具有遮罩圖案,強化外框的厚度大於中央圖案部的厚度,且精細金屬遮罩包括中央圖案部及強化外框。In order to achieve one or more of the above objectives, the method for manufacturing a fine metal mask provided by the present invention includes: sputtering to form a metal layer on a glass substrate; and electroforming to form a central pattern portion and strengthening the outer frame on the metal layer, And remove the metal layer and the glass substrate to obtain a fine metal mask. The reinforced outer frame is connected to the outer edge of the central pattern portion, the central pattern portion has a mask pattern, the thickness of the reinforced outer frame is greater than the thickness of the central pattern portion, and the fine metal mask includes the central pattern portion and the reinforced outer frame.

在本發明的一實施例中,上述電鑄形成中央圖案部及強化外框於金屬層上,並移除金屬層及玻璃基板,以獲得精細金屬遮罩之步驟,更包括:於金屬層上形成第一圖案化光阻層,第一圖案化光阻層暴露出金屬層的第一預定電鑄表面;第一電鑄層電鑄形成於第一預定電鑄表面上,第一電鑄層具有第一中央部及鄰接於第一中央部的第一周緣部,第一中央部與第一圖案化光阻層連接,第一周緣部具有一第二預定電鑄表面;於第一中央部及第一圖案化光阻層上形成第二圖案化光阻層,其中,第二圖案化光阻層暴露出第二預定電鑄表面;於第二預定電鑄表面上電鑄形成第二電鑄層;以及,將第一圖案化光阻層、第二圖案化光阻層、金屬層及玻璃基板移除,以獲得精細金屬遮罩。其中,第一圖案化光阻層移除後在第一中央部上形成遮罩圖案,第二圖案化光阻層移除後在於第二電鑄層與第一中央部之間形成貫孔,貫孔連通遮罩圖案,中央圖案部更包括第一電鑄層的第一中央部,且強化外框更包括第一電鑄層的第一周緣部及第二電鑄層。In an embodiment of the present invention, the above-mentioned electroforming forms a central pattern portion and reinforces the outer frame on the metal layer, and the step of removing the metal layer and the glass substrate to obtain a fine metal mask further includes: on the metal layer Forming a first patterned photoresist layer, the first patterned photoresist layer exposes the first predetermined electroformed surface of the metal layer; the first electroformed layer is electroformed on the first predetermined electroformed surface, the first electroformed layer Having a first central portion and a first peripheral portion adjacent to the first central portion, the first central portion is connected to the first patterned photoresist layer, the first peripheral portion has a second predetermined electroformed surface; Forming a second patterned photoresist layer on the central portion and the first patterned photoresist layer, wherein the second patterned photoresist layer exposes the second predetermined electroformed surface; Two electroformed layers; and, removing the first patterned photoresist layer, the second patterned photoresist layer, the metal layer and the glass substrate to obtain a fine metal mask. After removing the first patterned photoresist layer, a mask pattern is formed on the first central portion, and after removing the second patterned photoresist layer, a through hole is formed between the second electroformed layer and the first central portion, The through hole communicates with the mask pattern, the central pattern portion further includes the first central portion of the first electroformed layer, and the reinforced outer frame further includes the first peripheral portion of the first electroformed layer and the second electroformed layer.

在本發明的一實施例中,上述之將第一圖案化光阻層、第二圖案化光阻層、金屬層及玻璃基板移除,以獲得精細金屬遮罩的步驟,更包括: 將第一圖案化光阻層、第二圖案化光阻層移除並將第一保護膜覆蓋於第二電鑄層及第一電鑄層鄰接於第二電鑄層之一側;以及將金屬層及玻璃基板移除並將第二保護膜覆蓋於第一電鑄層遠離第二電鑄層之一側,以獲得精細金屬遮罩於第一保護膜及第二保護膜之間。In an embodiment of the present invention, the above steps of removing the first patterned photoresist layer, the second patterned photoresist layer, the metal layer and the glass substrate to obtain a fine metal mask further include: A patterned photoresist layer and a second patterned photoresist layer are removed and the first protective film is covered on the second electroformed layer and the first electroformed layer is adjacent to one side of the second electroformed layer; and the metal layer And the glass substrate is removed and the second protective film is covered on the side of the first electroformed layer away from the second electroformed layer to obtain a fine metal mask between the first protective film and the second protective film.

在本發明的一實施例中,上述之第二電鑄層更具有第二中央部及鄰接於第二中央部的第二周緣部,第二中央部與第二圖案化光阻層連接,第二周緣部具有第三預定電鑄表面。電鑄形成中央圖案部及強化外框於金屬層上,並移除金屬層及玻璃基板,以獲得精細金屬遮罩之步驟更包括:於第二中央部及第二圖案化光阻層上形成第三圖案化光阻層,其中,第三圖案化光阻層暴露出第三預定電鑄表面;以及,於第三預定電鑄表面上電鑄形成第三電鑄層。移除第一圖案化光阻層、第二圖案化光阻層、金屬層及玻璃基板,以獲得精細金屬遮罩之步驟更包括:將第一圖案化光阻層、第二圖案化光阻層、第三圖案化光阻層、金屬層及玻璃基板移除,以獲得精細金屬遮罩。其中,第三圖案化光阻層移除後在第三電鑄層與第二中央部之間形成透孔,透孔與貫孔連通,強化外框更包括第三電鑄層。In an embodiment of the invention, the above-mentioned second electroformed layer further has a second central portion and a second peripheral portion adjacent to the second central portion. The second central portion is connected to the second patterned photoresist layer. The second peripheral portion has a third predetermined electroformed surface. The step of electroforming to form the central pattern part and strengthen the outer frame on the metal layer, and remove the metal layer and the glass substrate to obtain a fine metal mask. The step further includes: forming on the second central part and the second patterned photoresist layer A third patterned photoresist layer, wherein the third patterned photoresist layer exposes a third predetermined electroformed surface; and, electroforming on the third predetermined electroformed surface to form a third electroformed layer. The steps of removing the first patterned photoresist layer, the second patterned photoresist layer, the metal layer and the glass substrate to obtain a fine metal mask further include: the first patterned photoresist layer and the second patterned photoresist The layer, the third patterned photoresist layer, the metal layer and the glass substrate are removed to obtain a fine metal mask. After the third patterned photoresist layer is removed, a through hole is formed between the third electroformed layer and the second central portion, the through hole communicates with the through hole, and the reinforced outer frame further includes the third electroformed layer.

在本發明的一實施例中,上述之將第一圖案化光阻層、第二圖案化光阻層、第三圖案化光阻層、金屬層及玻璃基板移除,以獲得精細金屬遮罩的步驟,更包括:將第一圖案化光阻層、第二圖案化光阻層及第三圖案化光阻層移除並將第一保護膜覆蓋於第三電鑄層、第二電鑄層及第一電鑄層鄰接於第二電鑄層之一側;以及,將金屬層及玻璃基板移除並將第二保護膜覆蓋於第一電鑄層遠離第二電鑄層及第三電鑄層之一側,以獲得精細金屬遮罩於第一保護膜及第二保護膜之間。In an embodiment of the present invention, the first patterned photoresist layer, the second patterned photoresist layer, the third patterned photoresist layer, the metal layer and the glass substrate are removed to obtain a fine metal mask The step further includes: removing the first patterned photoresist layer, the second patterned photoresist layer and the third patterned photoresist layer and covering the first protective film on the third electroformed layer and the second electroformed layer The layer and the first electroformed layer are adjacent to one side of the second electroformed layer; and, the metal layer and the glass substrate are removed and the second protective film is covered on the first electroformed layer away from the second electroformed layer and the third One side of the electroformed layer to obtain a fine metal mask between the first protective film and the second protective film.

本發明的精細金屬遮罩及精細金屬遮罩的製法中,由於強化外框連接於中央圖案部的外緣,且強化外框的厚度大於中央圖案層的厚度,故中央圖案部可於使用或搬運過程中維持平整而不易撓曲,遮罩圖案於多次使用後仍可以精確對準有機發光材料層的預定設置位置。因此,本發明的精細金屬遮罩的使用壽明長且有利於提升OLED顯示器的良率。In the manufacturing method of the fine metal mask and the fine metal mask of the present invention, since the reinforced outer frame is connected to the outer edge of the central pattern portion, and the thickness of the reinforced outer frame is greater than the thickness of the central pattern layer, the central pattern portion can be used or During transportation, it is kept flat and not easily flexed. The mask pattern can be accurately aligned with the predetermined setting position of the organic light-emitting material layer after multiple uses. Therefore, the use of the fine metal mask of the present invention is long-lived and beneficial to improve the yield of OLED displays.

為讓本發明之上述和其他目的、特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式,作詳細說明如下。To make the above and other objects, features, and advantages of the present invention more comprehensible, embodiments are described below in conjunction with the accompanying drawings, which are described in detail below.

圖1為本發明一實施例的精細金屬遮罩的示意圖。請參考圖1,本實施例的精細金屬遮罩100包括中央圖案部110及強化外框120,中央圖案部110具有遮罩圖案111,強化外框120連接於中央圖案部110的外緣,且強化外框120的厚度T1大於中央圖案部110的厚度T2,且精細金屬遮罩100是以電鑄技術製成。FIG. 1 is a schematic diagram of a fine metal mask according to an embodiment of the invention. Referring to FIG. 1, the fine metal mask 100 of this embodiment includes a central pattern portion 110 and a reinforced outer frame 120. The central pattern portion 110 has a mask pattern 111. The reinforced outer frame 120 is connected to the outer edge of the central pattern portion 110, and The thickness T1 of the reinforced outer frame 120 is greater than the thickness T2 of the central pattern portion 110, and the fine metal mask 100 is made by electroforming technology.

上述的中央圖案部110更可包括第一電鑄層200的第一中央部210,遮罩圖案111形成於第一中央部210上,且強化外框120更可包括第一電鑄層200的第一周緣部220及第二電鑄層300,第一周緣部220鄰接於第一中央部210,第二電鑄層300疊設於第一周緣部220上,第二電鑄層300與第一中央部210之間形成貫孔310,貫孔310連通遮罩圖案111。於本實施例中,第一周緣部220與第二電鑄層300的總厚度可為強化外框120的厚度T1,第一中央部210的厚度可為中央圖案部110的厚度T2。此外,遮罩圖案111的孔徑D1可小於貫孔310的孔徑D2,舉例而言,遮罩圖案111的孔徑D1可例如為25 μm,貫孔310的孔徑D2可例如為80 μm,但不以此為限。The aforementioned central pattern portion 110 may further include the first central portion 210 of the first electroformed layer 200, the mask pattern 111 is formed on the first central portion 210, and the reinforced outer frame 120 may further include the first electroformed layer 200. The first peripheral portion 220 and the second electroformed layer 300, the first peripheral portion 220 is adjacent to the first central portion 210, the second electroformed layer 300 is stacked on the first peripheral portion 220, and the second electroformed layer A through hole 310 is formed between 300 and the first central portion 210, and the through hole 310 communicates with the mask pattern 111. In this embodiment, the total thickness of the first peripheral portion 220 and the second electroformed layer 300 may be the thickness T1 of the reinforced outer frame 120, and the thickness of the first central portion 210 may be the thickness T2 of the central pattern portion 110. In addition, the aperture D1 of the mask pattern 111 may be smaller than the aperture D2 of the through hole 310. For example, the aperture D1 of the mask pattern 111 may be 25 μm, for example, and the aperture D2 of the through hole 310 may be 80 μm, for example. This is limited.

本實施例的精細金屬遮罩100,中央圖案部110的遮罩圖案111可用於製作OLED的有機發光材料層,由於強化外框120連接於中央圖案部110的外緣,且強化外框120的厚度大於中央圖案層的厚度,故可以提高精細金屬遮罩100整體結構強度,並避免中央圖案部110於使用或搬運過程中因外力而產生撓曲,使中央圖案部110可以維持平整,遮罩圖案111於多次使用後仍可以精確對準有機發光材料層的預定設置位置。因此,本實施例的精細金屬遮罩100不僅使用壽命長且有利於提升OLED顯示器的良率。另外,本實施例的精細金屬遮罩100是以電鑄法製成,故遮罩圖案111的位置準確且孔徑精度可達到數個微米,更無如蝕刻法的汙水處理及蝕刻液管理問題。In the fine metal mask 100 of this embodiment, the mask pattern 111 of the central pattern portion 110 can be used to fabricate the organic light emitting material layer of the OLED. Since the reinforced outer frame 120 is connected to the outer edge of the central pattern portion 110, The thickness is greater than the thickness of the central pattern layer, so the overall structural strength of the fine metal mask 100 can be improved, and the central pattern portion 110 can be prevented from flexing due to external forces during use or transportation, so that the central pattern portion 110 can be kept flat and the mask The pattern 111 can be accurately aligned with a predetermined setting position of the organic light-emitting material layer after multiple uses. Therefore, the fine metal mask 100 of this embodiment not only has a long service life but also helps to improve the yield of the OLED display. In addition, the fine metal mask 100 of this embodiment is made by electroforming, so the position of the mask pattern 111 is accurate and the aperture accuracy can reach several microns, and there is no problem of sewage treatment and etching solution management like etching .

圖2為本發明一實施例的精細金屬遮罩的製法的流程圖。請參考圖2,本實施例的精細金屬遮罩的製法包括:步驟S100:濺鍍形成金屬層於玻璃基板上;以及步驟S200:電鑄形成中央圖案部及強化外框於金屬層上,並移除金屬層及玻璃基板,以獲得精細金屬遮罩。本實施例的精細金屬遮罩的製法可製得如圖1所示的精細金屬遮罩100。2 is a flowchart of a method for manufacturing a fine metal mask according to an embodiment of the invention. Please refer to FIG. 2, the manufacturing method of the fine metal mask of this embodiment includes: step S100: forming a metal layer on a glass substrate by sputtering; and step S200: forming a central pattern portion and strengthening the outer frame on the metal layer by electroforming, and Remove the metal layer and the glass substrate to obtain a fine metal mask. The manufacturing method of the fine metal mask of this embodiment can produce the fine metal mask 100 shown in FIG. 1.

圖3為圖2的精細金屬遮罩的製法的步驟S200的流程圖。請參考圖2及3,步驟S200更可包括:步驟S210:形成第一圖案化光阻層於金屬層上;步驟S220:電鑄形成第一電鑄層於金屬層的第一預定電鑄表面上;步驟S230:形成第二圖案化光阻層於第一電鑄層的第一中央部及第一圖案化光阻層上;步驟S240:電鑄形成第二電鑄層於第一電鑄層的第二預定電鑄表面上;以及步驟S250:移除第一圖案化光阻層、第二圖案化光阻層、金屬層及玻璃基板,以獲得精細金屬遮罩。FIG. 3 is a flowchart of step S200 of the manufacturing method of the fine metal mask of FIG. 2. 2 and 3, step S200 may further include: step S210: forming a first patterned photoresist layer on the metal layer; step S220: forming the first electroformed layer on the first predetermined electroformed surface of the metal layer by electroforming Step S230: forming a second patterned photoresist layer on the first central portion of the first electroformed layer and the first patterned photoresist layer; step S240: electroforming the second electroformed layer on the first electroforming On the second predetermined electroformed surface of the layer; and step S250: removing the first patterned photoresist layer, the second patterned photoresist layer, the metal layer and the glass substrate to obtain a fine metal mask.

圖4A為對應於圖2中步驟S100的示意圖。請參考圖2及4A,在步驟S100中,金屬層500以濺鍍的方式形成於玻璃基板510上,金屬層500的材料例如可為但不限於銅、鉑、金及銀等導電金屬,玻璃基板510之材料例如可為但不限於氟氧化錫、氧化銦錫或矽。其中,金屬層500可藉由直流濺鍍、射頻濺鍍或三極濺鍍等濺鍍方式形成於玻璃基板510上,本發明對濺鍍方式不予以限制。FIG. 4A is a schematic diagram corresponding to step S100 in FIG. 2. 2 and 4A, in step S100, the metal layer 500 is formed on the glass substrate 510 by sputtering. The material of the metal layer 500 may be, but not limited to, conductive metals such as copper, platinum, gold and silver, glass, etc. The material of the substrate 510 may be, for example, but not limited to tin oxyfluoride, indium tin oxide, or silicon. The metal layer 500 may be formed on the glass substrate 510 by sputtering methods such as direct current sputtering, radio frequency sputtering, or triode sputtering. The present invention does not limit the sputtering method.

圖4B為對應於圖3中步驟S210的示意圖。請參考圖3及4B,在步驟S210中,第一圖案化光阻層600形成於金屬層500上,且第一圖案化光阻層600暴露出金屬層500的第一預定電鑄表面501;於本實施例中,第一圖案化光阻層600為乾膜光阻,但不以此為限;於其他實施例中,第一圖案化光阻層600亦可為濕膜光阻。此外,於本實施例中,第一圖案化光阻層600為正光阻,但不以此為限,於其他實施例中,第一圖案化光阻層600也可以是負光阻。FIG. 4B is a schematic diagram corresponding to step S210 in FIG. 3. 3 and 4B, in step S210, the first patterned photoresist layer 600 is formed on the metal layer 500, and the first patterned photoresist layer 600 exposes the first predetermined electroformed surface 501 of the metal layer 500; In this embodiment, the first patterned photoresist layer 600 is a dry film photoresist, but not limited thereto; in other embodiments, the first patterned photoresist layer 600 may also be a wet film photoresist. In addition, in this embodiment, the first patterned photoresist layer 600 is a positive photoresist, but it is not limited thereto. In other embodiments, the first patterned photoresist layer 600 may also be a negative photoresist.

圖4C為對應於圖3中步驟S220的示意圖。請參考圖3及4C,在步驟S220中,第一電鑄層200以電鑄的方式形成於第一預定電鑄表面501上,第一電鑄層200具有第一中央部210及鄰接於第一中央部210的第一周緣部220,第一中央部210與第一圖案化光阻層600連接,第一周緣部220具有第二預定電鑄表面221。第一電鑄層200的材料例如可為鐵、鈷、鎳或上述至少兩者的合金。另外,第一電鑄層200的厚度T2例如可為3 μm至5 μm,更進一步而言,例如為4 μm,但不以此為限。FIG. 4C is a schematic diagram corresponding to step S220 in FIG. 3. 3 and 4C, in step S220, the first electroformed layer 200 is formed on the first predetermined electroformed surface 501 by electroforming. The first electroformed layer 200 has a first central portion 210 and is adjacent to the first A first peripheral portion 220 of a central portion 210 is connected to the first patterned photoresist layer 600. The first peripheral portion 220 has a second predetermined electroformed surface 221. The material of the first electroformed layer 200 may be, for example, iron, cobalt, nickel, or an alloy of at least two of the above. In addition, the thickness T2 of the first electroformed layer 200 may be, for example, 3 μm to 5 μm, and further, for example, 4 μm, but it is not limited thereto.

圖4D為對應於圖3中步驟S230的示意圖。請參考圖3及4D,在步驟S230中,第二圖案化光阻層610形成於第一電鑄層200的第一中央部210及第一圖案化光阻層600上。第二圖案化光阻層610暴露出第二預定電鑄表面221。於本實施例中,第二圖案化光阻層610為乾膜光阻,但不以此為限;於其他實施例中,第二圖案化光阻層610亦可為濕膜光阻。此外,於本實施例中,第二圖案化光阻層610為正光阻,但不以此為限,於其他實施例中,第二圖案化光阻層610也可以是負光阻。FIG. 4D is a schematic diagram corresponding to step S230 in FIG. 3. 3 and 4D, in step S230, the second patterned photoresist layer 610 is formed on the first central portion 210 of the first electroformed layer 200 and the first patterned photoresist layer 600. The second patterned photoresist layer 610 exposes the second predetermined electroformed surface 221. In this embodiment, the second patterned photoresist layer 610 is a dry film photoresist, but not limited thereto; in other embodiments, the second patterned photoresist layer 610 may also be a wet film photoresist. In addition, in this embodiment, the second patterned photoresist layer 610 is a positive photoresist, but it is not limited thereto. In other embodiments, the second patterned photoresist layer 610 may also be a negative photoresist.

圖4E為對應於圖3中步驟S240的示意圖。請參考圖3及4E,在步驟S240中,第二電鑄層300以電鑄的方式形成於第一電鑄層200的第二預定電鑄表面221上。第二電鑄層300的材料例如可為鐵、鈷、鎳或XX上述至少兩者的合金。 另外,第二電鑄層300與第一周緣部220的總厚度T1可例如為50 μm至 100 μm,更進一步而言,例如為75 μm,但不以此為限。其中,第一電鑄層200的厚度T2即可等於第一周緣部220的厚度。FIG. 4E is a schematic diagram corresponding to step S240 in FIG. 3. 3 and 4E, in step S240, the second electroformed layer 300 is formed on the second predetermined electroformed surface 221 of the first electroformed layer 200 by electroforming. The material of the second electroformed layer 300 may be, for example, iron, cobalt, nickel, or an alloy of at least two of the above. In addition, the total thickness T1 of the second electroformed layer 300 and the first peripheral portion 220 may be, for example, 50 μm to 100 μm, and further, for example, 75 μm, but not limited thereto. The thickness T2 of the first electroforming layer 200 can be equal to the thickness of the first peripheral portion 220.

圖4F為對應於圖3中步驟S250的示意圖。請參考圖1、3、4E及4F,在步驟S250中,將第一圖案化光阻層600、第二圖案化光阻層610、金屬層500及玻璃基板510移除後,即獲得精細金屬遮罩100。第一圖案化光阻層600移除後形成遮罩圖案111於第一中央部210上,第二圖案化光阻層610移除後可形成貫孔310於第二電鑄層300與第一中央部210之間,貫孔310連通遮罩圖案111,精細金屬遮罩100即可包括第一電鑄層200、第二電鑄層300、貫孔310及遮罩圖案111;進一步而言,中央圖案部110更可包括第一中央部210,且強化外框120更可包括第一周緣部220及第二電鑄層300,第二電鑄層300疊設於第一周緣部220上。此外,遮罩圖案111例如可為矩形、菱形、圓形、多邊形等規則形狀,但也可以爲不規則形狀。本發明對遮罩圖案111的形狀及孔徑不予以限制。FIG. 4F is a schematic diagram corresponding to step S250 in FIG. 3. Referring to FIGS. 1, 3, 4E, and 4F, in step S250, after removing the first patterned photoresist layer 600, the second patterned photoresist layer 610, the metal layer 500, and the glass substrate 510, a fine metal is obtained Mask 100. After the first patterned photoresist layer 600 is removed, a mask pattern 111 is formed on the first central portion 210. After the second patterned photoresist layer 610 is removed, a through hole 310 can be formed in the second electroformed layer 300 and the first Between the central portions 210, the through holes 310 communicate with the mask pattern 111, and the fine metal mask 100 can include the first electroformed layer 200, the second electroformed layer 300, the through holes 310, and the mask pattern 111; further, The central pattern portion 110 may further include a first central portion 210, and the reinforced outer frame 120 may further include a first peripheral portion 220 and a second electroformed layer 300. The second electroformed layer 300 is stacked on the first peripheral portion 220 on. In addition, the mask pattern 111 may be a regular shape such as a rectangle, a diamond, a circle, and a polygon, but may also be an irregular shape. The present invention does not limit the shape and aperture of the mask pattern 111.

此外,本實施例的精細金屬遮罩的製法中,第一圖案化光阻層600可利用如微影技術,將光阻曝光並將曝光後的光阻顯影而獲得;同理,第二圖案化光阻層610亦可以微影技術而獲得,但本發明不以此為限。In addition, in the manufacturing method of the fine metal mask of this embodiment, the first patterned photoresist layer 600 can be obtained by exposing the photoresist and developing the exposed photoresist using, for example, lithography technology; similarly, the second pattern The photoresist layer 610 can also be obtained by lithography, but the invention is not limited thereto.

圖5為本發明一實施例的精細金屬遮罩的製法的步驟S250的流程圖。請參考圖5,步驟S250更可包括:步驟S251:移除第一圖案化光阻層及第二圖案化光阻層並覆蓋第一保護膜於第二電鑄層及第一電鑄層鄰接於第二電鑄層之一側;以及步驟S252:移除金屬層及玻璃基板並覆蓋第二保護膜於第一電鑄層遠離第二電鑄層之一側,以獲得精細金屬遮罩於第一保護膜及第二保護膜之間。FIG. 5 is a flowchart of step S250 of the method for manufacturing a fine metal mask according to an embodiment of the invention. Please refer to FIG. 5. Step S250 may further include: Step S251: removing the first patterned photoresist layer and the second patterned photoresist layer and covering the first protective film adjacent to the second electroformed layer and the first electroformed layer On one side of the second electroformed layer; and step S252: removing the metal layer and the glass substrate and covering the second protective film on the side of the first electroformed layer away from the second electroformed layer to obtain a fine metal mask Between the first protective film and the second protective film.

圖6A及6B為對應於圖5中步驟S251及S252的示意圖。請參考圖4E、5、6A及6B,於步驟S251中,將第一圖案化光阻層600及第二圖案化光阻層610移除後形成貫孔310及遮罩圖案111,再將第一保護膜700覆蓋於第一保護膜700於第二電鑄層300及第一電鑄層200鄰接於第二電鑄層300之一側,可封閉貫孔310遠離遮罩圖案111的一端;於步驟S252中,將金屬層500及玻璃基板510移除後,將第二保護膜710覆蓋於第一電鑄層200遠離第二電鑄層300之一側可封閉遮罩圖案111遠離貫孔310的一端,從而獲得精細金屬遮罩100於第一保護膜700及第二保護膜710之間。此外,第一保護膜700及第二保護膜710例如可為光固化解膠膜,但不以此為限。6A and 6B are schematic diagrams corresponding to steps S251 and S252 in FIG. 5. Referring to FIGS. 4E, 5, 6A and 6B, in step S251, the first patterned photoresist layer 600 and the second patterned photoresist layer 610 are removed to form a through hole 310 and a mask pattern 111, and then the A protective film 700 covers the first protective film 700 on one side of the second electroformed layer 300 and the first electroformed layer 200 adjacent to the second electroformed layer 300, and can close the end of the through hole 310 away from the mask pattern 111; In step S252, after removing the metal layer 500 and the glass substrate 510, the second protective film 710 is covered on the side of the first electroformed layer 200 away from the second electroformed layer 300 to close the mask pattern 111 away from the through hole One end of 310 to obtain the fine metal mask 100 between the first protective film 700 and the second protective film 710. In addition, the first protective film 700 and the second protective film 710 may be, for example, photo-curable release films, but not limited thereto.

本實施例的精細金屬遮罩的製法中,藉由將第一保護膜700及第二保護膜710覆蓋於精細金屬遮罩100,可達到保護精細金屬遮罩100免於沾染灰塵或磨損之優點。In the manufacturing method of the fine metal mask of this embodiment, by covering the first protective film 700 and the second protective film 710 on the fine metal mask 100, the advantage of protecting the fine metal mask 100 from dust or abrasion can be achieved .

圖7為本發明一實施例的精細金屬遮罩的示意圖。請參考圖7,本實施例的精細金屬遮罩100中,強化外框120更可包括第三電鑄層400,第二電鑄層300更可包括第二中央部320及第二周緣部330,第二周緣部330鄰接於第二中央部320,第三電鑄層400疊設於第二周緣部330上,第三電鑄層400與第二中央部320之間形成透孔410,透孔410連通貫孔310。於本實施例中,強化外框120的厚度T1為第三電鑄層400、第二周緣部330與第一周緣部220的總厚度。此外,貫孔310的孔徑D2小於透孔410的孔徑D3。7 is a schematic diagram of a fine metal mask according to an embodiment of the invention. Referring to FIG. 7, in the fine metal mask 100 of this embodiment, the reinforced outer frame 120 may further include a third electroformed layer 400, and the second electroformed layer 300 may further include a second central portion 320 and a second peripheral portion 330 , The second peripheral portion 330 is adjacent to the second central portion 320, the third electroformed layer 400 is stacked on the second peripheral portion 330, and a through hole 410 is formed between the third electroformed layer 400 and the second central portion 320 The hole 410 communicates with the through hole 310. In this embodiment, the thickness T1 of the reinforced outer frame 120 is the total thickness of the third electroformed layer 400, the second peripheral portion 330 and the first peripheral portion 220. In addition, the diameter D2 of the through hole 310 is smaller than the diameter D3 of the through hole 410.

圖8為本發明一實施例的精細金屬遮罩的製法的步驟S200的流程圖。請參考圖8,本實施例的精細金屬遮罩的製法中,步驟S200在步驟S240與步驟S250之間更可包括:步驟S260:形成第三圖案化光阻層於第二電鑄層及第二圖案化光阻層上;以及步驟S270:電鑄形成第三電鑄層於第二電鑄層的第二周緣部的第三預定電鑄表面上。本實施例的精細金屬遮罩的製法可製得如圖6所示的精細金屬遮罩100。8 is a flowchart of step S200 of the method for manufacturing a fine metal mask according to an embodiment of the invention. Please refer to FIG. 8, in the manufacturing method of the fine metal mask of this embodiment, step S200 may further include between step S240 and step S250: step S260: forming a third patterned photoresist layer on the second electroformed layer and the second Two patterned photoresist layers; and Step S270: Electroforming to form a third electroforming layer on the third predetermined electroforming surface of the second peripheral portion of the second electroforming layer. The manufacturing method of the fine metal mask of this embodiment can produce the fine metal mask 100 shown in FIG. 6.

圖9A為對應於圖8中步驟S240的示意圖。請參考圖8及9A,在步驟S240中,第二電鑄層300更可具有第二中央部320及鄰接於第二中央部320的第二周緣部330,第二中央部320與第二圖案化光阻層610連接,第二周緣部330具有第三預定電鑄表面331。另外,第一電鑄層200的厚度(即第一電鑄層200的厚度T2)例如可為3 μm至5 μm,更進一步而言,例如為5 μm,但不以此為限。第二電鑄層300與第一周緣部220的總厚度T3可例如為20 μm至100 μm,更進一步而言,例如為30 μm,但不以此為限。FIG. 9A is a schematic diagram corresponding to step S240 in FIG. 8. 8 and 9A, in step S240, the second electroformed layer 300 may further have a second central portion 320 and a second peripheral portion 330 adjacent to the second central portion 320, the second central portion 320 and the second pattern The photoresist layer 610 is connected, and the second peripheral portion 330 has a third predetermined electroformed surface 331. In addition, the thickness of the first electroformed layer 200 (that is, the thickness T2 of the first electroformed layer 200) may be, for example, 3 μm to 5 μm, and further, for example, 5 μm, but not limited thereto. The total thickness T3 of the second electroformed layer 300 and the first peripheral portion 220 may be, for example, 20 μm to 100 μm, and further, for example, 30 μm, but not limited thereto.

圖9B為對應於圖8中步驟S260的示意圖。請參考圖8及9B,在步驟S260中,第三圖案化光阻層620形成於第二電鑄層300的第二中央部320及第二圖案化光阻層610上。第三圖案化光阻層620暴露出第三預定電鑄表面331。於本實施例中,第三圖案化光阻層620為乾膜光阻,但不以此為限;於其他實施例中,第三圖案化光阻層620亦可為濕膜光阻。此外,於本實施例中,第三圖案化光阻層620為正光阻,但不以此為限,於其他實施例中,第三圖案化光阻層620也可以是負光阻。FIG. 9B is a schematic diagram corresponding to step S260 in FIG. 8. 8 and 9B, in step S260, the third patterned photoresist layer 620 is formed on the second central portion 320 of the second electroformed layer 300 and the second patterned photoresist layer 610. The third patterned photoresist layer 620 exposes the third predetermined electroformed surface 331. In this embodiment, the third patterned photoresist layer 620 is a dry film photoresist, but not limited thereto; in other embodiments, the third patterned photoresist layer 620 may also be a wet film photoresist. In addition, in this embodiment, the third patterned photoresist layer 620 is a positive photoresist, but not limited thereto. In other embodiments, the third patterned photoresist layer 620 may also be a negative photoresist.

圖9C為對應於圖8中步驟S270的示意圖。請參考圖8及9C,在步驟S270中,第三電鑄層400以電鑄的方式形成於第二電鑄層300的第三預定電鑄表面331上。第三電鑄層400的材料例如可為鐵、鈷、鎳或上述至少兩者的合金。另外,第三電鑄層400、第二周緣部330與第一周緣部220的總厚度(即強化外框120的厚度T1)可例如為50 μm至 100 μm,但不以此為限。9C is a schematic diagram corresponding to step S270 in FIG. 8. 8 and 9C, in step S270, the third electroformed layer 400 is formed on the third predetermined electroformed surface 331 of the second electroformed layer 300 by electroforming. The material of the third electroformed layer 400 may be, for example, iron, cobalt, nickel, or an alloy of at least two of the above. In addition, the total thickness of the third electroformed layer 400, the second peripheral portion 330, and the first peripheral portion 220 (that is, the thickness T1 of the reinforced outer frame 120) may be, for example, 50 μm to 100 μm, but not limited thereto.

圖9D為對應於圖8中步驟S250的示意圖。請參考圖7、8、9C及9D,在步驟S250中,將第一圖案化光阻層600、第二圖案化光阻層610、第三圖案化光阻層620、金屬層500及玻璃基板510移除後,即可獲得精細金屬遮罩100。第三圖案化光阻層620移除後可形成透孔410於第三電鑄層400與第二中央部320之間,透孔410與貫孔310連通,強化外框120更可包括第三電鑄層400。FIG. 9D is a schematic diagram corresponding to step S250 in FIG. 8. Referring to FIGS. 7, 8, 9C, and 9D, in step S250, the first patterned photoresist layer 600, the second patterned photoresist layer 610, the third patterned photoresist layer 620, the metal layer 500, and the glass substrate After 510 is removed, the fine metal mask 100 can be obtained. After the third patterned photoresist layer 620 is removed, a through hole 410 may be formed between the third electroformed layer 400 and the second central portion 320, the through hole 410 communicates with the through hole 310, and the reinforced outer frame 120 may further include a third Electroforming layer 400.

此外,於本實施例的精細金屬遮罩的製法中,第一圖案化光阻層600可利用如微影技術,將光阻曝光並將曝光後的光阻顯影而獲得;同理,第二圖案化光阻層610及第三圖案化光阻層620亦可以微影技術而獲得,但本發明不以此為限。In addition, in the manufacturing method of the fine metal mask of this embodiment, the first patterned photoresist layer 600 can be obtained by exposing the photoresist and developing the exposed photoresist using, for example, lithography technology; similarly, the second The patterned photoresist layer 610 and the third patterned photoresist layer 620 can also be obtained by lithography, but the invention is not limited thereto.

本實施例的精細金屬遮罩100的製法中,先形成厚度相對較薄的第一電鑄層200,再以增厚的方式形成厚度相對較厚的第二電鑄層300及第三電鑄層400而獲得強化外框120。其中,由於遮罩圖案111是形成於先形成且厚度相對較薄的第一電鑄層200的第一中央部210上,故遮罩圖案111的位置、形狀及孔徑可被精確控制,則有助於提高OLED顯示器的良率。In the manufacturing method of the fine metal mask 100 of this embodiment, the first electroformed layer 200 with a relatively thin thickness is formed first, and then the second electroformed layer 300 and the third electroformed with a relatively thick thickness are formed by thickening The layer 400 obtains the reinforced outer frame 120. Among them, since the mask pattern 111 is formed on the first central portion 210 of the first electroforming layer 200 which is formed earlier and has a relatively thin thickness, the position, shape and aperture of the mask pattern 111 can be accurately controlled, then Help to improve the yield of OLED displays.

圖10為本發明一實施例的精細金屬遮罩的製法的步驟S250的流程圖。請參考圖10,步驟S250更可包括:步驟S251a:將第一圖案化光阻層、第二圖案化光阻層及第三圖案化光阻層移除,並覆蓋第一保護膜於第三電鑄層、第二電鑄層及第一電鑄層鄰接於第二電鑄層之一側;以及步驟S252a:移除金屬層及玻璃基板並覆蓋第二保護膜於第一電鑄層遠離第二電鑄層及第三電鑄層之一側,獲得精細金屬遮罩於第一保護膜及第二保護膜之間。10 is a flowchart of step S250 of the method for manufacturing a fine metal mask according to an embodiment of the invention. Referring to FIG. 10, step S250 may further include: step S251a: removing the first patterned photoresist layer, the second patterned photoresist layer, and the third patterned photoresist layer, and covering the first protective film on the third The electroformed layer, the second electroformed layer and the first electroformed layer are adjacent to one side of the second electroformed layer; and step S252a: removing the metal layer and the glass substrate and covering the second protective film away from the first electroformed layer On one side of the second electroformed layer and the third electroformed layer, a fine metal mask is obtained between the first protective film and the second protective film.

圖11A及11B為對應於圖10中步驟S251a及S252a的示意圖。請參考圖9C、10、11A及11B,於步驟S250中,將第一圖案化光阻層600、第二圖案化光阻層610及第三圖案化光阻層620移除後可形成透孔410、貫孔310及遮罩圖案111,再將第一保護膜700覆蓋於第三電鑄層400、第二電鑄層300及第一電鑄層200鄰接於第二電鑄層300之一側可封閉透孔410遠離遮罩圖案111及貫孔310的一端;於步驟S252中,將金屬層500及玻璃基板510移除後,再將第二保護膜710覆蓋於第一電鑄層200遠離第二電鑄層300及第三電鑄層400之一側,可將遮罩圖案111遠離貫孔310的一端封閉,從而獲得精細金屬遮罩100於第一保護膜700及第二保護膜710之間。此外,第一保護膜700及第二保護膜710可例如為光固化解膠膜,但不以此為限。11A and 11B are schematic diagrams corresponding to steps S251a and S252a in FIG. 10. 9C, 10, 11A, and 11B, in step S250, the first patterned photoresist layer 600, the second patterned photoresist layer 610, and the third patterned photoresist layer 620 are removed to form a through hole 410, the through hole 310 and the mask pattern 111, and then cover the first protective film 700 on the third electroformed layer 400, the second electroformed layer 300 and the first electroformed layer 200 adjacent to one of the second electroformed layer 300 The side can close the through hole 410 away from the end of the mask pattern 111 and the through hole 310; in step S252, after removing the metal layer 500 and the glass substrate 510, the second protective film 710 is covered on the first electroforming layer 200 One side away from the second electroforming layer 300 and the third electroforming layer 400 can close the end of the mask pattern 111 away from the through hole 310, thereby obtaining the fine metal mask 100 on the first protective film 700 and the second protective film Between 710. In addition, the first protective film 700 and the second protective film 710 may be, for example, photocurable release films, but not limited thereto.

本實施例的精細金屬遮罩的製法中藉由將第一保護膜700及第二保護膜710覆蓋於精細金屬遮罩100,可達到保護精細金屬遮罩100免於沾染灰塵或磨損之優點。In the manufacturing method of the fine metal mask of this embodiment, by covering the first protective film 700 and the second protective film 710 on the fine metal mask 100, the advantage of protecting the fine metal mask 100 from dust or abrasion can be achieved.

綜上所述,本發明實施例的精細金屬遮罩及精細金屬遮罩的製法中,由於強化外框連接於中央圖案部的外緣,且強化外框的厚度大於中央圖案層的厚度,故中央圖案部可於使用或搬運過程中維持平整而不易撓曲,遮罩圖案於多次使用後仍可以精確對準有機發光材料層的預定設置位置,從而有利於提升OLED顯示器的良率。且精細金屬遮罩是採用電鑄法製成,故遮罩圖案的位置準確且孔徑精度可達到數個微米,更無如蝕刻法的汙水處理及蝕刻液管理問題。In summary, in the manufacturing method of the fine metal mask and the fine metal mask of the embodiment of the present invention, since the reinforced outer frame is connected to the outer edge of the central pattern portion, and the thickness of the reinforced outer frame is greater than the thickness of the central pattern layer, The central pattern portion can be kept flat and not easily flexed during use or transportation. The mask pattern can be accurately aligned with the predetermined placement position of the organic light-emitting material layer after multiple uses, thereby improving the yield of the OLED display. And the fine metal mask is made by electroforming, so the position of the mask pattern is accurate and the aperture accuracy can reach several microns, and there is no problem of sewage treatment and etching solution management like the etching method.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。此外,本說明書或申請專利範圍中提及的「第一」、「第二」等用語僅用以命名元件(element)的名稱或區別不同實施例或範圍,而並非用來限制元件數量上的上限或下限。Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention belongs can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined in the appended patent application. In addition, the terms "first" and "second" mentioned in this specification or the scope of patent application are only used to name the element or distinguish different embodiments or ranges, not to limit the number of elements. Upper or lower limit.

100‧‧‧精細金屬遮罩110‧‧‧中央圖案部111‧‧‧遮罩圖案120‧‧‧強化外框200‧‧‧第一電鑄層210‧‧‧第一中央部220‧‧‧第一周緣部221‧‧‧第二預定電鑄表面300‧‧‧第二電鑄層310‧‧‧貫孔320‧‧‧第二中央部330‧‧‧第二周緣部331‧‧‧第三預定電鑄表面400‧‧‧第三電鑄層410‧‧‧透孔500‧‧‧金屬層501‧‧‧第一預定電鑄表面510‧‧‧玻璃基板600‧‧‧第一圖案化光阻層610‧‧‧第二圖案化光阻層620‧‧‧第三圖案化光阻層700‧‧‧第一保護膜710‧‧‧第二保護膜T1、T2、T3‧‧‧厚度D1、D2、D3‧‧‧孔徑S100、S200、S210、S220、S230、S240、S250、S251、S251a、S252、S252a、S260、S270‧‧‧步驟100‧‧‧Fine metal mask 110‧‧‧ Central pattern part 111‧‧‧ Mask pattern 120‧‧‧Strengthened outer frame 200‧‧‧First electroformed layer 210‧‧‧‧First central part 220‧‧‧ First peripheral part 221‧‧‧Second scheduled electroformed surface 300‧‧‧Second electroformed layer 310‧‧‧Through hole 320‧‧‧Second central part 330‧‧‧Second peripheral part 331‧‧‧ Third scheduled electroformed surface 400‧‧‧ Third electroformed layer 410‧‧‧Through hole 500‧‧‧Metal layer 501‧‧‧First scheduled electroformed surface 510‧‧‧Glass substrate 600‧‧‧ First pattern Photoresist layer 610‧‧‧Second patterned photoresist layer 620‧‧‧ Third patterned photoresist layer 700‧‧‧First protective film 710‧‧‧Second protective film T1, T2, T3‧‧‧‧ Thickness D1, D2, D3 ‧‧‧ Aperture S100, S200, S210, S220, S230, S240, S250, S251, S251a, S252, S252a, S260, S270

圖1為本發明一實施例的精細金屬遮罩的示意圖; 圖2為本發明一實施例的精細金屬遮罩的製法的流程圖; 圖3為圖2的精細金屬遮罩的製法的步驟S200的流程圖; 圖4A為對應於圖2中步驟S100的示意圖; 圖4B為對應於圖3中步驟S210的示意圖; 圖4C為對應於圖3中步驟S220的示意圖; 圖4D為對應於圖3中步驟S230的示意圖; 圖4E為對應於圖3中步驟S240的示意圖; 圖4F為對應於圖3中步驟S250的示意圖; 圖5為本發明一實施例的精細金屬遮罩的製法的步驟S250的流程圖; 圖6A為對應於圖5中步驟S251的示意圖; 圖6B為對應於圖5中步驟S252的示意圖; 圖7為本發明一實施例的精細金屬遮罩的示意圖; 圖8為本發明一實施例的精細金屬遮罩的製法的步驟S200的流程圖; 圖9A為對應於圖8中步驟S240的示意圖; 圖9B為對應於圖8中步驟S260的示意圖; 圖9C為對應於圖8中步驟S270的示意圖; 圖9D為對應於圖8中步驟S250的示意圖; 圖10為本發明一實施例的精細金屬遮罩的製法的步驟S250的流程圖; 圖11A為對應於圖10中步驟S251a的示意圖;以及 圖11B為對應於圖10中步驟S252a的示意圖。1 is a schematic diagram of a fine metal mask according to an embodiment of the invention; FIG. 2 is a flowchart of a method for manufacturing a fine metal mask according to an embodiment of the invention; FIG. 3 is a step S200 of a method for manufacturing a fine metal mask in FIG. 2 4A is a schematic diagram corresponding to step S100 in FIG. 2; FIG. 4B is a schematic diagram corresponding to step S210 in FIG. 3; FIG. 4C is a schematic diagram corresponding to step S220 in FIG. 3; FIG. 4D is a diagram corresponding to FIG. 3 4E is a schematic diagram corresponding to step S240 in FIG. 3; FIG. 4F is a schematic diagram corresponding to step S250 in FIG. 3; FIG. 5 is a step S250 of a method for manufacturing a fine metal mask according to an embodiment of the present invention 6A is a schematic diagram corresponding to step S251 in FIG. 5; FIG. 6B is a schematic diagram corresponding to step S252 in FIG. 5; FIG. 7 is a schematic diagram of a fine metal mask according to an embodiment of the present invention; FIG. 8 is FIG. 9A is a schematic diagram corresponding to step S240 in FIG. 8; FIG. 9B is a schematic diagram corresponding to step S260 in FIG. 8; FIG. 9C is a corresponding diagram 8 is a schematic diagram of step S270 in FIG. 8; FIG. 9D is a schematic diagram corresponding to step S250 in FIG. 8; FIG. 10 is a flowchart of step S250 of a method for manufacturing a fine metal mask according to an embodiment of the present invention; FIG. 11A is a diagram corresponding to FIG. A schematic diagram of step S251a; and FIG. 11B is a schematic diagram corresponding to step S252a in FIG.

100‧‧‧精細金屬遮罩 100‧‧‧Fine metal mask

110‧‧‧中央圖案部 110‧‧‧Central Design Department

111‧‧‧遮罩圖案 111‧‧‧Mask pattern

120‧‧‧強化外框 120‧‧‧Strengthen the frame

200‧‧‧第一電鑄層 200‧‧‧The first electroforming layer

210‧‧‧第一中央部 210‧‧‧First Central Department

220‧‧‧第一周緣部 220‧‧‧First Perimeter

300‧‧‧第二電鑄層 300‧‧‧Second electroforming layer

310‧‧‧貫孔 310‧‧‧Through hole

T1、T2‧‧‧厚度 T1, T2‧‧‧thickness

D1、D2‧‧‧孔徑 D1, D2‧‧‧Aperture

Claims (10)

一種精細金屬遮罩,包括: 一中央圖案部,具有一遮罩圖案;以及 一強化外框,連接於該中央圖案部的一外緣; 其中,該強化外框的厚度大於該中央圖案部的厚度,且該精細金屬遮罩是以電鑄製程製成。A fine metal mask, including: a central pattern portion with a mask pattern; and a reinforced outer frame connected to an outer edge of the central pattern portion; wherein the thickness of the reinforced outer frame is greater than that of the central pattern portion Thickness, and the fine metal mask is made by electroforming process. 如請求項1所述的精細金屬遮罩,其中,該中央圖案部更包括一第一電鑄層的一第一中央部,該遮罩圖案形成於該第一中央部上,且該強化外框更包括該第一電鑄層的一第一周緣部及一第二電鑄層,該第一周緣部鄰接於該第一中央部,該第二電鑄層疊設於該第一周緣部上,該第二電鑄層與該第一中央部之間形成一貫孔,該貫孔連通該遮罩圖案。The fine metal mask of claim 1, wherein the central pattern portion further includes a first central portion of a first electroformed layer, the mask pattern is formed on the first central portion, and the reinforced outer The frame further includes a first peripheral portion of the first electroformed layer and a second electroformed layer, the first peripheral portion is adjacent to the first central portion, and the second electroformed layer is stacked on the first circumference On the edge portion, a through hole is formed between the second electroformed layer and the first central portion, and the through hole communicates with the mask pattern. 如請求項2所述的精細金屬遮罩,其中,該強化外框更包括一第三電鑄層,該第二電鑄層更包括一第二中央部及一第二周緣部,該第二周緣部鄰接於該第二中央部,該第三電鑄層疊設於該第二周緣部上,該第三電鑄層與該第二中央部之間形成一透孔,該透孔連通該貫孔。The fine metal mask according to claim 2, wherein the reinforced outer frame further includes a third electroformed layer, and the second electroformed layer further includes a second central portion and a second peripheral portion, the second The peripheral portion is adjacent to the second central portion. The third electroformed layer is stacked on the second peripheral portion. A through hole is formed between the third electroformed layer and the second central portion. The through hole communicates with the through hole hole. 如請求項1所述的精細金屬遮罩,其中該精細金屬遮罩的材料是選自於下列構成的群組:鐵、鈷、鎳及上述至少兩者的合金。The fine metal mask of claim 1, wherein the material of the fine metal mask is selected from the group consisting of iron, cobalt, nickel, and alloys of at least two of the above. 一種精細金屬遮罩的製法,包括: 濺鍍形成一金屬層於一玻璃基板上;以及 電鑄形成一中央圖案部及一強化外框於該金屬層上,並移除該金屬層及該玻璃基板,以獲得該精細金屬遮罩; 其中,該強化外框連接於該中央圖案部的一外緣,該中央圖案部具有一遮罩圖案,該強化外框的厚度大於該中央圖案部的厚度,且該精細金屬遮罩包括該中央圖案部及該強化外框。A method for manufacturing a fine metal mask includes: forming a metal layer on a glass substrate by sputtering; and forming a central pattern portion and a strengthened outer frame on the metal layer by electroforming, and removing the metal layer and the glass A substrate to obtain the fine metal mask; wherein the reinforced outer frame is connected to an outer edge of the central pattern portion, the central pattern portion has a mask pattern, and the thickness of the reinforced outer frame is greater than the thickness of the central pattern portion And the fine metal mask includes the central pattern portion and the reinforced outer frame. 如請求項5所述的精細金屬遮罩的製法,其中所述電鑄形成該中央圖案部及該強化外框於該金屬層上,並移除該金屬層及該玻璃基板,以獲得該精細金屬遮罩之步驟,更包括: 形成一第一圖案化光阻層於該金屬層上,其中,該第一圖案化光阻層暴露出該金屬層的一第一預定電鑄表面; 電鑄形成一第一電鑄層於該第一預定電鑄表面上,其中,該第一電鑄層具有一第一中央部及一鄰接於第一中央部的第一周緣部,該第一中央部與該第一圖案化光阻層連接,該第一周緣部具有一第二預定電鑄表面; 形成一第二圖案化光阻層於該第一中央部及該第一圖案化光阻層上,其中,該第二圖案化光阻層暴露出該第二預定電鑄表面; 電鑄形成一第二電鑄層於該第二預定電鑄表面上;以及 移除該第一圖案化光阻層、該第二圖案化光阻層、該金屬層及該玻璃基板,以獲得該精細金屬遮罩; 其中,該第一圖案化光阻層移除後形成該遮罩圖案於該第一中央部上,該第二圖案化光阻層移除後形成一貫孔於該第二電鑄層與該第一中央部之間,該貫孔連通該遮罩圖案,該中央圖案部更包括該第一電鑄層的該第一中央部,且該強化外框更包括該第一電鑄層的該第一周緣部及該第二電鑄層。The method for manufacturing a fine metal mask according to claim 5, wherein the electroforming forms the central pattern portion and the reinforced outer frame on the metal layer, and removes the metal layer and the glass substrate to obtain the fine The step of the metal mask further includes: forming a first patterned photoresist layer on the metal layer, wherein the first patterned photoresist layer exposes a first predetermined electroformed surface of the metal layer; electroforming Forming a first electroforming layer on the first predetermined electroforming surface, wherein the first electroforming layer has a first central portion and a first peripheral portion adjacent to the first central portion, the first central Connected to the first patterned photoresist layer, the first peripheral portion has a second predetermined electroformed surface; forming a second patterned photoresist layer on the first central portion and the first patterned photoresist On the layer, wherein the second patterned photoresist layer exposes the second predetermined electroformed surface; electroforming forms a second electroformed layer on the second predetermined electroformed surface; and removing the first patterned A photoresist layer, the second patterned photoresist layer, the metal layer and the glass substrate to obtain the fine metal mask; wherein, after the first patterned photoresist layer is removed, the mask pattern is formed on the first On a central portion, after the second patterned photoresist layer is removed, a through hole is formed between the second electroformed layer and the first central portion, the through hole communicates with the mask pattern, and the central pattern portion further includes The first central portion of the first electroformed layer, and the reinforced outer frame further includes the first peripheral portion of the first electroformed layer and the second electroformed layer. 如請求項6所述的精細金屬遮罩的製法,其中該第二電鑄層更具有一第二中央部及一鄰接於第二中央部的第二周緣部,該第二中央部與該第二圖案化光阻層連接,該第二周緣部具有一第三預定電鑄表面; 所述電鑄形成該中央圖案部及該強化外框於該金屬層上,並移除該金屬層及該玻璃基板,以獲得該精細金屬遮罩之步驟,更包括:形成一暴露出該第三預定電鑄表面的第三圖案化光阻層於該第二中央部及該第二圖案化光阻層上,其中,該第三圖案化光阻層;以及,電鑄形成一第三電鑄層於該第三預定電鑄表面上;以及 所述移除該第一圖案化光阻層、該第二圖案化光阻層、該金屬層及該玻璃基板,以獲得該精細金屬遮罩之步驟,更包括:移除該第一圖案化光阻層、該第二圖案化光阻層、該第三圖案化光阻層、該金屬層及該玻璃基板,以獲得該精細金屬遮罩,其中,該第三圖案化光阻層移除後形成一透孔於該第三電鑄層與該第二中央部之間,該透孔與該貫孔連通,該強化外框更包括該第三電鑄層。The method for manufacturing a fine metal mask according to claim 6, wherein the second electroformed layer further has a second central portion and a second peripheral portion adjacent to the second central portion, the second central portion and the first Two patterned photoresist layers are connected, the second peripheral portion has a third predetermined electroformed surface; the electroforming forms the central pattern portion and the strengthened outer frame on the metal layer, and removes the metal layer and the The step of obtaining the fine metal mask on the glass substrate further includes: forming a third patterned photoresist layer exposing the third predetermined electroformed surface on the second central portion and the second patterned photoresist layer Above, wherein the third patterned photoresist layer; and, electroforming to form a third electroformed layer on the third predetermined electroformed surface; and said removing the first patterned photoresist layer, the first The step of obtaining the fine metal mask by two patterned photoresist layers, the metal layer and the glass substrate, further comprising: removing the first patterned photoresist layer, the second patterned photoresist layer, the first Three patterned photoresist layers, the metal layer and the glass substrate to obtain the fine metal mask, wherein after the third patterned photoresist layer is removed, a through hole is formed in the third electroformed layer and the first Between the two central portions, the through hole communicates with the through hole, and the reinforced outer frame further includes the third electroformed layer. 如請求項6所述的精細金屬遮罩的製法,其中,所述移除該第一圖案化光阻層、該第二圖案化光阻層、該金屬層及該玻璃基板,以獲得該精細金屬遮罩的步驟,更包括: 移除該第一圖案化光阻層、該第二圖案化光阻層並覆蓋一第一保護膜於該第二電鑄層及該第一電鑄層鄰接於該第二電鑄層之一側;以及 移除該金屬層及該玻璃基板並覆蓋一第二保護膜於該第一電鑄層遠離該第二電鑄層之一側,以獲得該精細金屬遮罩於該第一保護膜及該第二保護膜之間。The method for manufacturing a fine metal mask according to claim 6, wherein the first patterned photoresist layer, the second patterned photoresist layer, the metal layer and the glass substrate are removed to obtain the fine The step of the metal mask further includes: removing the first patterned photoresist layer, the second patterned photoresist layer and covering a first protective film adjacent to the second electroformed layer and the first electroformed layer On one side of the second electroformed layer; and removing the metal layer and the glass substrate and covering a second protective film on the side of the first electroformed layer away from the second electroformed layer to obtain the fine The metal is shielded between the first protective film and the second protective film. 如請求項7所述的精細金屬遮罩的製法,其中,所述移除該第一圖案化光阻層、該第二圖案化光阻層、該第三圖案化光阻層、該金屬層及該玻璃基板,以獲得該精細金屬遮罩的步驟,更包括: 移除該第一圖案化光阻層、該第二圖案化光阻層及該第三圖案化光阻層並覆蓋一第一保護膜於該第三電鑄層、該第二電鑄層及該第一電鑄層鄰接於該第二電鑄層之一側;以及 移除該金屬層及該玻璃基板並覆蓋一第二保護膜於該第一電鑄層遠離該第二電鑄層及該第三電鑄層之一側,以獲得該精細金屬遮罩於該第一保護膜及該第二保護膜之間。The method for manufacturing a fine metal mask according to claim 7, wherein the first patterned photoresist layer, the second patterned photoresist layer, the third patterned photoresist layer, and the metal layer are removed And the glass substrate to obtain the fine metal mask, further comprising: removing the first patterned photoresist layer, the second patterned photoresist layer and the third patterned photoresist layer and covering a first A protective film on the third electroformed layer, the second electroformed layer and the first electroformed layer adjacent to one side of the second electroformed layer; and removing the metal layer and the glass substrate and covering a first Two protective films are located on one side of the first electroformed layer away from the second electroformed layer and the third electroformed layer to obtain the fine metal mask between the first protective film and the second protective film. 如請求項7所述的精細金屬遮罩的製法,其中該精細金屬遮罩的材料是選自於下列構成的群組:鐵、鈷、鎳及上述至少兩者的合金。The method for manufacturing a fine metal mask according to claim 7, wherein the material of the fine metal mask is selected from the group consisting of iron, cobalt, nickel and alloys of at least two of the above.
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