CN110911423B - Substrate, preparation method thereof and mask plate - Google Patents
Substrate, preparation method thereof and mask plate Download PDFInfo
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- CN110911423B CN110911423B CN201911235440.4A CN201911235440A CN110911423B CN 110911423 B CN110911423 B CN 110911423B CN 201911235440 A CN201911235440 A CN 201911235440A CN 110911423 B CN110911423 B CN 110911423B
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- 239000000758 substrate Substances 0.000 title claims abstract description 128
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 125000006850 spacer group Chemical group 0.000 claims abstract description 143
- 238000000059 patterning Methods 0.000 claims description 144
- 229920002120 photoresistant polymer Polymers 0.000 claims description 73
- 238000013507 mapping Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 51
- 239000010408 film Substances 0.000 description 49
- 230000001965 increasing effect Effects 0.000 description 21
- 239000004973 liquid crystal related substance Substances 0.000 description 15
- 230000018109 developmental process Effects 0.000 description 12
- 239000010409 thin film Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 238000007789 sealing Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000002346 layers by function Substances 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 239000011651 chromium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 244000126211 Hericium coralloides Species 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The embodiment of the invention provides a substrate, a preparation method thereof and a mask plate, relates to the technical field of display, and can solve the problem that the contact area between the second surface of a spacer and a film layer is small. The substrate comprises a plurality of light emitting areas and non-light emitting areas for defining the light emitting areas; the substrate comprises a bottom plate and a spacer which is arranged on the bottom plate and is positioned in the non-luminous area; the spacer comprises a first surface close to the bottom plate and a second surface far away from the bottom plate; the first surface is in the border of orthographic projection surrounds the second surface is in the border of orthographic projection on the bottom plate, the first surface is in the border of orthographic projection on the bottom plate with the second surface is in the scope of interval a between the border of orthographic projection on the bottom plate is 0 < a ≤ 4.5um.
Description
Technical Field
The invention relates to the technical field of display, in particular to a substrate, a preparation method thereof and a mask plate.
Background
At present, with the rapid development of display technology, the resolution of the display is higher and higher. The higher the resolution of the display, the greater the number of light-emitting regions in the display area of the display, resulting in an increased area of the light-emitting regions. However, in the case of a display with a constant size of the display area, the area of the non-light-emitting area is reduced because the area of the light-emitting area is increased.
The spacer in the display is arranged in the non-luminous area and used for supporting, and the larger the contact area between the upper surface and the lower surface of the spacer and the film layer or the substrate is, the higher the supporting strength is, the smaller the contact area is, and the lower the supporting strength is.
Disclosure of Invention
The embodiment of the invention provides a substrate, a preparation method thereof and a mask plate, which can solve the problem that the contact area between the second surface of a spacer and a film layer is small.
In order to achieve the above purpose, the embodiment of the invention adopts the following technical scheme:
in a first aspect, a substrate is provided, comprising a plurality of light emitting areas and a non-light emitting area defining the plurality of light emitting areas; the substrate comprises a bottom plate and a spacer which is arranged on the bottom plate and is positioned in the non-luminous area; the spacer comprises a first surface close to the bottom plate and a second surface far away from the bottom plate; the first surface is in the border of orthographic projection surrounds the second surface is in the border of orthographic projection on the bottom plate, the first surface is in the border of orthographic projection on the bottom plate with the second surface is in the scope of interval a between the border of orthographic projection on the bottom plate is 0 < a ≤ 4.5um.
In some embodiments, a distance a between a boundary of an orthographic projection of the first surface on the base plate and a boundary of an orthographic projection of the second surface on the base plate ranges from 3um ≦ a ≦ 3.5um.
In some embodiments, the shape of the first surface and the shape of the second surface are the same, and the spacing between the boundary of the orthographic projection of the first surface on the base plate and the boundary of the orthographic projection of the second surface on the base plate is equal everywhere.
In some embodiments, the shape of the first surface and the second surface is one of circular, quadrilateral, hexagonal, or octagonal.
In a second aspect, a mask plate is provided, which includes a first patterning region, a second patterning region, and a spacer region disposed between the first patterning region and the second patterning region; the second patterning area and the spacer area are both annular, and the second patterning area surrounds the first patterning area; the first composition area and the second composition area are both light-transmitting areas, and the spacer area is a non-light-transmitting area; or, the first composition area and the second composition area are both non-light-transmitting areas, and the spacer area is a light-transmitting area.
In some embodiments, the shape of the second patterning region boundary is the same as the shape of the first patterning region; the width of the spacer is equal everywhere; the width of the second mapping zone is equal everywhere.
In some embodiments, the width H of the second mapping region 2 Comprises the following steps:wherein θ is the exposure angle of the exposure machine, H 1 The width of the spacer region is L, the maximum size of the first patterning region is L, the maximum size of the pattern to be formed is D, and the distance between the mask plate and the substrate on which the pattern is to be formed is T.
In some embodiments, the width of the spacer is greater than or equal to the resolution of the exposure machine.
In some embodiments, the width of the second patterning region is less than or equal to the resolution of the exposure machine.
In some embodiments, the first patterning region is one of circular, quadrilateral, hexagonal or octagonal in shape.
In a third aspect, a method for manufacturing a substrate is provided, including: forming a photoresist film on the base plate; and carrying out mask exposure on the photoresist film by using the mask plate, and developing to form the spacer.
In some embodiments, in the case where the photoresist film is a negative photoresist, the first patterning region and the second patterning region are light-transmitting regions, and the spacer region is a non-light-transmitting region; under the condition that the photoresist film is a positive photoresist, the first patterning area and the second patterning area are non-light-transmitting areas, and the spacing area is a light-transmitting area.
The embodiment of the invention provides a substrate, a preparation method thereof and a mask plate, wherein the mask plate comprises a plurality of light emitting areas and non-light emitting areas for defining the light emitting areas; the substrate comprises a bottom plate and a spacer which is arranged on the bottom plate and is positioned in the non-luminous area; the spacer comprises a first surface close to the bottom plate and a second surface far away from the bottom plate; the boundary of the orthographic projection of the first surface on the bottom plate surrounds the boundary of the orthographic projection of the second surface on the bottom plate, and the range of the distance a between the boundary of the orthographic projection of the first surface on the bottom plate and the boundary of the orthographic projection of the second surface on the bottom plate is more than 0 and less than or equal to 4.5um. In the embodiment of the invention, the range of the distance a between the orthographic projection boundary of the first surface on the bottom plate and the orthographic projection boundary of the second surface on the bottom plate is 0 & lt a & lt 4.5um, and the distance between the orthographic projection boundary of the first surface on the bottom plate and the orthographic projection boundary of the second surface on the bottom plate is smaller, namely the difference between the size of the first surface and the size of the second surface is smaller, so that under the condition that the size of the first surface of the spacer arranged in the non-luminous area of the substrate is unchanged, the size of the second surface is larger, the contact area between the second surface and the film layer is increased, the supporting strength of the spacer is enhanced, and the pressure resistance of the display is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a display according to an embodiment of the present invention;
fig. 2 is a schematic view illustrating a region division of a display panel according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of an lcd panel according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of an electroluminescent display panel according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a substrate according to an embodiment of the present invention;
FIG. 6 is a first schematic structural diagram illustrating orthographic projections of a first surface and a second surface of a spacer on a substrate according to an embodiment of the present invention;
FIG. 7 is a second schematic structural view illustrating orthographic projections of the first surface and the second surface of the spacer on the substrate according to the embodiment of the present invention;
FIG. 8 is a third schematic structural view illustrating orthographic projections of the first surface and the second surface of the spacer on the substrate according to the embodiment of the present invention;
FIG. 9 is a fourth schematic structural diagram illustrating orthographic projections of the first surface and the second surface of the spacer on the substrate according to the embodiment of the present invention;
FIG. 10 is a schematic structural diagram of an orthographic projection of the first surface and the second surface of the spacer on the substrate according to the embodiment of the invention;
fig. 11 is a first schematic structural diagram of a mask according to an embodiment of the present invention;
FIG. 12 is a first structural view illustrating a spacer formed after development by performing mask exposure using the mask of FIG. 11;
fig. 13 is a schematic structural diagram of a mask plate according to a second embodiment of the present invention;
FIG. 14 is a second structural view illustrating a spacer formed after development by performing mask exposure using the mask of FIG. 13;
fig. 15 is a schematic structural view of a spacer formed after development by performing mask exposure using a mask plate according to the related art.
Reference numerals are as follows:
01-a display area; 02-a peripheral zone; 101-a light emitting region; 102-a non-light emitting region; 1-a frame; 2-cover plate glass; 3-a display panel; 4-a circuit board; 10-a substrate; 11-a spacer; 13-mask plate; 31-an array substrate; 32-pair of cassette substrates; 33 a liquid crystal layer; 34-an upper polarizer; 35-lower polarizer; 36-a substrate for display; 37-an encapsulation layer; 100-a base plate; 110-a first surface; 111-a second surface; 131-a first composition area; 132-a second composition area; 133-a spacer region; 310-a first substrate; 311-a thin film transistor; 312-pixel electrodes; 313-a common electrode; 314-a first insulating layer; 315 a second insulating layer; 320-a second substrate; 321-a color filter layer; 322-black matrix pattern; 360-a third substrate; 361-anode; 362-a light emitting functional layer; 363-a cathode; 364-pixel definition layer; 365 (316) -planarization layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the present invention provides a Display, which is not limited to the type of the Display, and may be a Liquid Crystal Display (LCD) or an electroluminescent Display. In the case that the Display is an electroluminescent Display, the electroluminescent Display may be an Organic Light-Emitting Diode Display (OLED for short) or a Quantum Dot electroluminescent Display (QLED for short).
As shown in fig. 1, the main structure of the display includes a frame 1, a cover glass 2, a display Panel (Panel) 3, and other components such as a circuit board 4. In case the display is a liquid crystal display, the display further comprises a backlight assembly. The backlight assembly is not illustrated in fig. 1.
The longitudinal section of the frame 1 is U-shaped, the display panel 3, the circuit board 4 and other accessories are all arranged in the frame 1, the circuit board 4 is arranged below the display panel 3, and the cover glass 2 is arranged on one side of the display panel 3, which is far away from the circuit board 4. In the case where the display is a liquid crystal display including a backlight assembly, the backlight assembly is disposed between the display panel 3 and the circuit board 4.
As shown in fig. 2, the display panel 3 includes a display area 01 and a peripheral area 02 located at least on one side of the display area 01, and fig. 2 illustrates an example in which the peripheral area 02 surrounds the display area 01. The display region 01 includes a plurality of light emitting regions 101 and a non-light emitting region 102 for defining the plurality of light emitting regions 101. The peripheral region 02 is used for wiring, and a gate driver circuit may be provided in the peripheral region 02.
In the case where the display is a liquid crystal display, the display panel 3 is a liquid crystal display panel. As shown in fig. 3, the main structure of the liquid crystal display panel includes an array substrate 31, a pair of cell substrates 32, and a liquid crystal layer 33 disposed between the array substrate 31 and the pair of cell substrates 32.
Each sub-pixel of the array substrate 31 is provided with a thin film transistor 311 and a pixel electrode 312 on a first substrate 310. The thin film transistor 311 includes an active layer, a source electrode, a drain electrode, a gate electrode, and a gate insulating layer, the source electrode and the drain electrode are respectively in contact with the active layer, and the pixel electrode 312 is electrically connected to the drain electrode of the thin film transistor 311. In some embodiments, the array substrate 31 further includes a common electrode 313 disposed on the first substrate 310. The pixel electrode 312 and the common electrode 313 may be disposed at the same layer, in which case the pixel electrode 312 and the common electrode 313 are each a comb-tooth structure including a plurality of strip-shaped sub-electrodes. The pixel electrode 312 and the common electrode 313 may also be disposed at different layers, in which case, as shown in fig. 3, the first insulating layer 314 is disposed between the pixel electrode 312 and the common electrode 313. In the case where the common electrode 313 is provided between the thin film transistor 311 and the pixel electrode 312, as shown in fig. 3, a second insulating layer 315 is further provided between the common electrode 313 and the thin film transistor 311. In other embodiments, the pair of cell substrates 32 includes a common electrode 313. As shown in fig. 3, the array substrate 31 further includes a planarization layer 316 disposed on a side of the thin film transistor 311 and the pixel electrode 312 away from the first substrate 310.
As shown in fig. 3, the opposing substrate 32 includes a Color filter layer 321 disposed on the second substrate 320, in which case, the opposing substrate 32 may also be referred to as a Color Filter (CF). The color filter layer 321 at least includes a red photoresist unit, a green photoresist unit, and a blue photoresist unit, and the red photoresist unit, the green photoresist unit, and the blue photoresist unit are respectively aligned with the sub-pixels on the array substrate 31 one by one. The opposite-case base plate 32 further includes a black matrix pattern 322 disposed on the second substrate 320, the black matrix pattern 322 serving to space apart the red, green, and blue light blocking units.
As shown in fig. 3, the liquid crystal display panel further includes an upper polarizer 34 disposed on the opposite-to-cell substrate 32 side away from the liquid crystal layer 33 and a lower polarizer 35 disposed on the array substrate 31 side away from the liquid crystal layer 33.
It should be understood that the area of the liquid crystal display panel facing the color filter layer 321 is the light-emitting area 101, and the area facing the black matrix pattern 322 is the non-light-emitting area 102.
In the case where the display is an electroluminescent display, the display panel 3 is an electroluminescent display panel. As shown in fig. 4, the main structure of the electroluminescent display panel includes a display substrate 36 and an encapsulation layer 37 for encapsulating the display substrate 36. Here, the sealing layer 37 may be a sealing film or a sealing substrate.
As shown in fig. 4, each sub-pixel of the above-described display substrate 36 includes a light emitting device and a driving circuit provided over a third substrate 360, and the driving circuit includes a plurality of thin film transistors 311. The light-emitting device includes an anode 361, a light-emitting functional layer 362, and a cathode 363, and the anode 361 is electrically connected to a drain of the thin film transistor 311 which is a driving transistor among the plurality of thin film transistors 311. The display substrate 36 further includes a pixel defining layer 364, the pixel defining layer 364 including a plurality of opening regions, one light emitting device being disposed in one of the opening regions. In some embodiments, the light emitting functional layer 362 comprises a light emitting layer. In other embodiments, the light emitting function layer 362 includes one or more of an Electron Transport Layer (ETL), an Electron Injection Layer (EIL), a Hole Transport Layer (HTL), and a Hole Injection Layer (HIL), in addition to the light emitting layer.
As shown in fig. 4, the display substrate 36 further includes a planarization layer 365 disposed between the driving circuit and the anode 361.
The embodiment of the invention provides a substrate 10, and the substrate 10 can be applied to the liquid crystal display panel, in this case, the substrate 10 can be an array substrate 31 or a pair of box substrates 32. The substrate 10 may be applied to the above-described electroluminescent display panel, and in this case, the substrate 10 may be the display substrate 36, and in the case where the sealing layer 37 is a sealing substrate, the substrate 10 may be a sealing substrate.
As shown in fig. 2, the substrate 10 includes a plurality of light emitting regions 101 and a non-light emitting region 102 for defining the light emitting regions; as shown in fig. 5, 6, 7, 8 and 9, the substrate 10 includes a bottom plate 100 and a spacer (ps) 11 disposed on the bottom plate 100 and located in the non-light emitting region 102; the spacer 11 includes a first surface 110 close to the base plate 100 and a second surface 111 far from the base plate 100; the boundary of the orthographic projection of the first surface 110 on the bottom plate 100 surrounds the boundary of the orthographic projection of the second surface 111 on the bottom plate 100, and the range of the distance a between the boundary of the orthographic projection of the first surface 110 on the bottom plate 100 and the boundary of the orthographic projection of the second surface 111 on the bottom plate 100 is 0 & lt a & lt 4.5um.
In the case where the substrate 10 is applied to the liquid crystal display panel, and the substrate 10 is the array substrate 31, the array substrate 31 includes the spacers 11, the spacers 11 are disposed on the surface of the array substrate 31, the structure of the bottom plate 100 is not limited, and reference may be made to the structure of the array substrate 31. In some embodiments, as shown in fig. 3, the base plate 100 includes a first substrate 310, and a thin film transistor 311, a second insulating layer 315, a common electrode 313, a first insulating layer 314, a pixel electrode 312, and a planarization layer 316 disposed on the first substrate 310. In this case, the first surface 110 of the spacer 11 is in contact with the base plate 100, and the second surface 111 is in contact with the opposing cassette substrate 32. In the case where the substrate 10 is the pair of cassette substrates 32, the pair of cassette substrates 32 include the spacer 11, and the spacer 11 is provided on the surface of the pair of cassette substrates 32, and the structure of the bottom plate 100 is not limited, and reference may be made to the structure of the pair of cassette substrates 32. In some embodiments, as shown in fig. 3, the base plate 100 includes a second substrate 320, and a color filter layer 321 and a black matrix pattern 322 disposed on the second substrate 320. In this case, the first surface 110 of the spacer 11 is in contact with the base plate 100, and the second surface 111 is in contact with the array substrate 31.
In the case where the substrate 10 is applied to an electroluminescent display panel, and the substrate 10 is a display substrate 36, the display substrate 36 includes a spacer 11, and as shown in fig. 4, the spacer 11 is disposed between the pixel defining layer 364 and the cathode electrode 363. The structure of the base plate 100 is not limited, and reference may be made to the structure of the display substrate 36. In some embodiments, as shown in fig. 4, the backplane 100 includes a third substrate 360, and a driving circuit, a planarization layer 365, an anode 361, a light-emitting functional layer 362, a cathode 363, and a pixel defining layer 364 sequentially disposed on the third substrate 360. In this case, the first surface 110 of the spacer 11 is in contact with the pixel defining layer 364, and the second surface 111 is in contact with the cathode 363. In the case where the substrate 10 is a package substrate, the package substrate includes spacers 11, and the spacers 11 are disposed on a surface of the package substrate. The structure of the bottom plate 100 is not limited, and the structure of the package substrate may be referred to. In this case, the first surface 110 of the spacer 11 is in contact with the base plate 100, and the second surface 111 is in contact with the cathode 363 of the display substrate 36.
It should be understood that in the case where the substrate 10 is applied to a liquid crystal display panel, the spacers 11 serve to support the array substrate 31 and the opposing cell substrate 32 such that the array substrate 31 and the opposing cell substrate 32 maintain a certain cell thickness. In the case where the substrate 10 is applied to an electroluminescent display panel, the spacer 11 serves to support the encapsulation layer 37.
In addition, the spacers 11 in the embodiment of the present invention are all referred to as columnar spacers. The number of the spacers 11 included in the substrate 10 and the distance between two adjacent spacers 11 are not limited, and may be set according to the size of the substrate 10.
The shapes of the first surface 110 and the second surface 111 are not limited, and the shapes of the first surface 110 and the second surface 111 may be one of a circle as shown in fig. 5 and 6, a quadrangle as shown in fig. 7, a hexagon as shown in fig. 8, or an octagon as shown in fig. 9, for example. It should be understood that the shapes of the first surface 110 and the second surface 111 include, but are not limited to, the above-mentioned circular shape, quadrilateral shape, hexagonal shape, and octagonal shape, and other shapes are also possible, which are not listed here.
It should be understood by those skilled in the art that when the spacer 11 is formed on the bottom plate 100 through the processes of coating a photoresist film, mask exposure and developing, the thickness of the coated photoresist film is greater due to the greater thickness of the spacer 11, so that during the processes of mask exposure and developing, the exposure amount and the developing time of the portion of the photoresist film close to the bottom plate 100 and the portion far from the bottom plate 100 are different, so that the size of the formed spacer 11 along the direction far from the bottom plate 100 is different, i.e. the size of the first surface 110 close to the bottom plate 100 and the size of the second surface 111 far from the bottom plate 100 are different, and the size of the first surface 110 close to the bottom plate 100 is greater than the size of the second surface 111 far from the bottom plate 100, i.e. the boundary of the first surface 110 on the bottom plate 100 is around the boundary of the second surface 111 on the bottom plate 100.
On this basis, the boundary of the orthographic projection of the first surface 110 on the bottom plate 100 surrounds the boundary of the orthographic projection of the second surface 111 on the bottom plate 100, and can be that the boundary of the orthographic projection of the second surface 111 on the bottom plate 100 is positioned in the boundary of the orthographic projection of the first surface 110 on the bottom plate 100; it is also possible that the boundary of the orthographic projection of the second surface 111 on the base plate 100 partially overlaps the boundary of the orthographic projection of the first surface 110 on the base plate 100.
The size of the distance a between the boundary of the orthographic projection of the first surface 110 on the base plate 100 and the boundary of the orthographic projection of the second surface 111 on the base plate 100 is not limited, and the distance between the boundary of the orthographic projection of the first surface 110 on the base plate 100 and the boundary of the orthographic projection of the second surface 111 on the base plate 100 may be, for example, 1um, 3um, 4um, 4.5um. The smaller the spacing a between the boundary where the first surface 110 is orthographically projected on the base plate 100 and the boundary where the second surface 111 is orthographically projected on the base plate 100, the smaller the difference in the size of the first surface 100 and the size of the second surface 111.
It should be understood by those skilled in the art that the spacer 11 is disposed in the non-light emitting regions 102 between the adjacent light emitting regions 101, and the maximum size of the first surface 110 of the spacer 11 is also fixed under the condition that the size of the non-light emitting regions 102 between the adjacent light emitting regions 101 is fixed. Since the size of the second surface 111 of the spacer 11 is smaller than the size of the first surface 110 of the spacer 11, if the size difference between the first surface 110 and the second surface 111 is larger, that is, the distance between the boundary of the orthographic projection of the first surface 110 on the base plate 100 and the boundary of the orthographic projection of the second surface 111 on the base plate 100 is larger, the size of the second surface 111 is smaller, and thus, the area of the second surface 111 contacting the film layer is smaller, which results in insufficient supporting strength of the spacer 11. In particular, in the case where the size of the display area 01 of the display is not changed, the higher the resolution of the display, the greater the number of light emitting areas 101 in the display area 01, so that the area of the light emitting area 101 increases and the area of the non-light emitting area 102 decreases. Since the spacer 11 is disposed in the non-light emitting region 102, the area of the non-light emitting region 102 is reduced, which results in a reduction in the size of the spacer 11, that is, the size of both the first surface 110 and the second surface 111 of the spacer 11 is reduced, and thus the size of the second surface 111 of the spacer 11 is smaller, which further results in insufficient supporting strength of the spacer 11.
In the related art, in the case that the size of the first surface 110 of the spacer 11 disposed in the non-light emitting region 102 of the substrate 10 is not changed, since the distance between the boundary of the orthographic projection of the first surface 110 of the spacer 11 on the base plate 100 and the boundary of the orthographic projection of the second surface 111 on the base plate 100 is larger, that is, the size difference between the first surface 110 and the second surface 111 is larger, the area of the second surface 111 is smaller, the supporting strength of the spacer 11 is insufficient, and the pressure resistance of the display is affected.
The embodiment of the invention provides a substrate 10, which comprises a plurality of light-emitting areas 01 and a non-light-emitting area 02 for defining the plurality of light-emitting areas 01; the substrate 10 includes a bottom plate 100 and a spacer 11 disposed on the bottom plate 100 and located in the non-light-emitting region 02; the spacer 11 includes a first surface 110 close to the base plate 100 and a second surface 111 far from the base plate 100; the boundary of the orthographic projection of the first surface 110 on the bottom plate 100 surrounds the boundary of the orthographic projection of the second surface 111 on the bottom plate 100, and the range of the distance a between the boundary of the orthographic projection of the first surface 110 on the bottom plate 100 and the boundary of the orthographic projection of the second surface 111 on the bottom plate 100 is 0 & lt a & lt 4.5um. In the embodiment of the present invention, the range of the distance a between the orthographic projection boundary of the first surface 110 on the bottom plate 100 and the orthographic projection boundary of the second surface 111 on the bottom plate 100 is 0 < a ≦ 4.5um, and the distance between the orthographic projection boundary of the first surface 110 on the bottom plate 100 and the orthographic projection boundary of the second surface 111 on the bottom plate 100 is smaller, that is, the size difference between the first surface 110 and the second surface 111 is smaller, so that under the condition that the size of the first surface 110 of the spacer 11 disposed in the non-light emitting region 102 of the substrate 10 is unchanged, the size of the second surface 111 is larger, thereby increasing the contact area between the second surface 111 and the film layer, enhancing the supporting strength of the spacer 11, and improving the pressure resistance of the display.
As can be seen from the above description, when the size of the spacer 11 is designed, the maximum size of the first surface 110 of the spacer 11 is not changed when the size of the light emitting region 101 and the non-light emitting region 102 of the substrate 10 is fixed. The smaller the distance a between the boundary of the orthographic projection of the first surface 110 on the base plate 100 and the boundary of the orthographic projection of the second surface 111 on the base plate 100, the smaller the difference between the size of the second surface 111 and the size of the first surface 110, that is, the larger the size of the second surface 111, and thus the larger the contact area between the second surface 111 and the film layer, is beneficial to improving the supporting strength of the spacer 11.
In some embodiments, the distance a between the boundary of the orthographic projection of the first surface 110 on the base plate 100 and the boundary of the orthographic projection of the second surface 111 on the base plate 100 is 3um ≦ a ≦ 3.5um.
Here, the distance a between the boundary of the orthographic projection of the first surface 110 on the base plate 100 and the boundary of the orthographic projection of the second surface 111 on the base plate 100 may be, for example, 3um, 3.2um, 3.5um, or the like.
It should be understood that, when the spacer 11 is manufactured, the mask exposure and development process limits that the distance a between the boundary of the orthographic projection of the first surface 110 on the base plate 100 and the boundary of the orthographic projection of the second surface 111 on the base plate 100 cannot be too small, that is, the size difference between the first surface 110 and the second surface 111 cannot be too small, and if the distance a between the boundary of the orthographic projection of the first surface 110 on the base plate 100 and the boundary of the orthographic projection of the second surface 111 on the base plate 100 is too small, the process difficulty is increased, and the cost for manufacturing the spacer 11 is increased. Based on this, the distance a between the boundary of the orthographic projection of the first surface 110 on the base plate 100 and the boundary of the orthographic projection of the second surface 111 on the base plate 100 is larger than or equal to 3um.
In the embodiment of the invention, the range of the distance a between the orthographic projection boundary of the first surface 110 on the bottom plate 100 and the orthographic projection boundary of the second surface 111 on the bottom plate 100 is 3um or more and 3.5um or less, and the distance a between the orthographic projection boundary of the first surface 110 on the bottom plate 100 and the orthographic projection boundary of the second surface 111 on the bottom plate 100 is smaller, namely the size difference between the first surface 110 and the second surface 111 is smaller, so that the size of the second surface 111 is further increased, the supporting strength of the spacer 11 can be further enhanced, and the pressure resistance of the display can be improved.
In embodiments of the present invention, the shape of the first surface 110 is the same as the shape of the second surface 111, and in some embodiments, as shown in fig. 6, 7, 8 and 9, the distance a between the boundary of the orthographic projection of the first surface 110 on the base plate 100 and the boundary of the orthographic projection of the second surface 111 on the base plate 100 is equal everywhere. In other embodiments, as shown in fig. 10, the distance a between the boundary of the orthographic projection of the first surface 110 on the base plate 100 and the boundary of the orthographic projection of the second surface 111 on the base plate 100 is not exactly equal.
Here, not being completely equal means that the spacing a between the boundary of the orthographic projection of the first surface 110 on the base plate 100 and the boundary of the orthographic projection of the second surface 111 on the base plate 100 is equal at partial positions and is not equal at partial positions; alternatively, the boundary of the orthographic projection of the first surface 110 on the base plate 100 and the boundary of the orthographic projection of the second surface 111 on the base plate 100 are not equal at all. Fig. 10 illustrates an example in which the first surface 110 and the second surface 111 are both circular in shape, and the distance a between the boundary of the orthographic projection of the first surface 110 on the base plate 100 and the boundary of the orthographic projection of the second surface 111 on the base plate 100 is not equal everywhere.
In the embodiment of the invention, under the condition that the distance a between the orthographic projection boundary of the first surface 110 on the bottom plate 100 and the orthographic projection boundary of the second surface 111 on the bottom plate 100 is equal everywhere, because the shape of the spacer 11 is regular, when the spacer 11 is in contact with the film layer, the supporting strength of the spacer 11 in all directions can be ensured to be the same, and the pressure resistance of the display is further improved.
In the case where the interval a between the boundary of the orthographic projection of the first surface 110 on the base plate 100 and the boundary of the orthographic projection of the second surface 111 on the base plate 100 is equal everywhere, the size difference of the first surface 110 and the second surface 111 is 2 times the interval a between the boundary of the orthographic projection of the first surface 110 on the base plate 100 and the boundary of the orthographic projection of the second surface 111 on the base plate 100. For example, the distance a between the boundary where the first surface 110 is orthographically projected on the base plate 100 and the boundary where the second surface 111 is orthographically projected on the base plate 100 is 4.5um, and the size difference between the first surface 110 and the second surface 111 is 9um. For another example, the distance a between the boundary where the first surface 110 is orthographically projected on the base plate 100 and the boundary where the second surface 111 is orthographically projected on the base plate 100 is 3.5um, and the size difference between the first surface 110 and the second surface 111 is 7um.
An embodiment of the present invention provides a mask 13, as shown in fig. 11, 12, 13, and 14, including a first patterning region 131, a second patterning region 132, and a spacer region 133 disposed between the first patterning region 131 and the second patterning region 132; the second patterning region 132 and the spacer region 133 are both annular, and the second patterning region 132 surrounds the first patterning region 131; the first patterning region 131 and the second patterning region 132 are both light-transmitting regions, and the spacer region 133 is a non-light-transmitting region; alternatively, the first patterning region 131 and the second patterning region 132 are both non-light-transmitting regions, and the spacer region 133 is a light-transmitting region.
Here, the first patterning region 131, the second patterning region 132, and the spacer region 133 disposed between the first patterning region 131 and the second patterning region 132 are used to form a pattern, for example, to form a spacer 11, and the first patterning region 131, the second patterning region 132, and the spacer region 133 disposed between the first patterning region 131 and the second patterning region 132 may be regarded as a pattern forming region. Based on this, in the embodiment of the present invention, the mask 13 may include one pattern forming region, or may include two or more pattern forming regions. Fig. 11 and 13 each illustrate an example in which the mask 13 includes four pattern forming regions. When the spacers 11 are formed by mask exposure using the mask plate 13 as shown in fig. 11 and 13, four spacers 11 can be formed.
The shape of the first mapping region 131 is not limited. In some embodiments, the shape of the first patterning region 131 is one of circular, quadrilateral, hexagonal or octagonal. Fig. 11 and 13 illustrate an example in which the first patterning area 131 has a circular shape. It will be understood by those skilled in the art that the shape of the first patterning area 131 includes, but is not limited to, the above-mentioned circular shape, quadrilateral shape, hexagonal shape, and octagonal shape, and other shapes are also possible, which are not listed here.
Since the second patterning region 132 and the spacer region 133 are both ring-shaped, the second patterning region 132 and the spacer region 133 each include two boundaries. The shape of the two boundaries of the second mapping region 132 is not limited, and may be, for example, a circle, a quadrangle, a hexagon, an octagon, or the like. When the shape of the two boundaries of the second mapping region 132 is circular, the second mapping region 132 is circular. The shape of the two boundaries of the spacer region 133 is not limited, and may be, for example, a circle, a quadrangle, a hexagon, an octagon, or the like.
The material of the mask 13 is not limited, and in some embodiments, the material of the opaque region of the mask 13 is a metal, such as chromium (Cr), iron (Fe), or the like.
It should be understood that, in the case that the material to be patterned is a negative photoresist, when the mask 13 provided in the embodiment of the present invention is used to form a pattern, the mask 13 may be selected such that the first patterning region 131 and the second patterning region 132 are both light-transmitting regions, and the spacer region 133 is a non-light-transmitting region. In the case that the material to be patterned is a positive photoresist, when the mask 13 provided in the embodiment of the present invention is used to form a pattern, the first patterning region 131 and the second patterning region 132 may be non-light-transmitting regions, and the spacer region 133 may be a light-transmitting region of the mask 13.
The mask 13 provided in the related art, as shown in fig. 15, includes at least one first patterning region 131, and the first patterning region 131 is a light-transmitting region or a non-light-transmitting region. Taking the first patterning region 131 as the light-transmitting region as an example, since the mask 13 provided in the related art only includes the first patterning region 131, when the mask 13 is used for mask exposure, light can only expose the photoresist film through the first patterning region 131, and thus, the size difference between the surface of the spacer 11 close to the mask 13 and the surface of the mask 13 away from the mask is large. Especially, when the thickness of the photoresist film is large, the size difference between the surface of the spacer 11 close to the mask plate 13 and the surface far from the mask plate 13 is very obvious.
The embodiment of the invention provides a mask plate 13, which comprises a first patterning area 131, a second patterning area 132 and a spacing area 133 arranged between the first patterning area 131 and the second patterning area 132; the second patterning region 132 and the spacer region 133 are both annular, and the second patterning region 132 surrounds the first patterning region 131; the first patterning region 131 and the second patterning region 132 are both light-transmitting regions, and the spacer region 133 is a non-light-transmitting region; alternatively, the first patterning region 131 and the second patterning region 132 are both non-light-transmitting regions, and the spacer region 133 is a light-transmitting region. Referring to fig. 12 and 14, when the first patterning region 131 and the second patterning region 132 are both light-transmitting regions and the spacer region 133 is a non-light-transmitting region, when the mask plate 13 is used to expose a negative photoresist film, light can be emitted to the negative photoresist film through the first patterning region 131 and can also be emitted to the photoresist film through the second patterning region 132, so that the second patterning region 132 can perform light compensation on the first patterning region 131, and increase the area of the negative photoresist film exposed region, so that the size of the developed pattern near the surface of the mask plate 13 is increased, and the size difference between the surface of the formed pattern near the mask plate 13 and the surface far from the mask plate 13 is reduced. Under the condition that the first patterning area 131 and the second patterning area 132 are non-light-transmitting areas and the spacer area 133 is a light-transmitting area, when the positive photoresist film is exposed by using the mask plate 13, except that the first patterning area 131 can block light from being emitted to the positive photoresist film, the second patterning area 132 can also block light from being emitted to the positive photoresist film, thus, the second patterning area 132 can compensate the shielding of the first patterning area 131 on the light, the area of a positive photoresist film exposure area is reduced, the size of a pattern formed after development close to the surface of the mask plate 13 is increased, and the size difference of the formed pattern close to the surface of the mask plate 13 and the size difference of the pattern far away from the surface of the mask plate 13 are reduced.
Based on this, when the mask plate 13 provided by the embodiment of the present invention is used to form the spacer 11, the size difference between the first surface 110 and the second surface 111 of the formed spacer 11 is smaller, and under the condition that the size of the first surface 110 of the spacer 11 is not changed, the size of the second surface 111 is larger, so that the contact area between the second surface 111 and the film layer is increased.
Referring to fig. 15, when the negative photoresist film is mask-exposed by using a mask plate 13 provided in the related art to form spacers 11, the second surface 111 of the spacers 11 formed after development has a size U1. As shown in fig. 12, when the negative photoresist film is subjected to mask exposure by using the mask plate 13 provided in the embodiment of the present invention to form the spacer 11, since the second patterning region 132 is increased by the mask plate 13, that is, the area of the exposure region when the photoresist film is exposed is increased, the size of the spacer 11 formed after development is increased (the increased portion is shown by hatching in fig. 12), and the size of the second surface 111 of the spacer 11 is U2. As can be seen by comparing fig. 12 and 15, the second surface 111 of the spacer 11 increases in size.
As shown in fig. 11, the shape of the boundary of the second mapping region 132 is the same as that of the first mapping region 131. In some embodiments, as shown in fig. 11, the width of the spacer regions 133 is equal everywhere and the width of the second patterning regions 132 is equal everywhere. In other embodiments, the width of the spacer regions 133 is not exactly equal and the width of the second patterning regions 132 is not exactly equal. Fig. 13 illustrates an example in which the width of the spacer region 133 is not equal everywhere, and the width of the second patterning region 132 is not equal everywhere.
Here, since the second mapping region 132 has a ring shape, the boundary of the second mapping region 132 includes a boundary close to the first mapping region 131 and a boundary far from the first mapping region 131. The shape of the boundary of the second mapping region 132 is the same as the shape of the first mapping region 131, meaning that the shape of the second mapping region 132 near the boundary of the first mapping region 131 and the shape of the boundary far from the first mapping region 131 are both the same as the shape of the first mapping region 131. Illustratively, as shown in fig. 11, the shape of the first mapping region 131 is circular, and the shape of the second mapping region 132 near the boundary of the first mapping region 131 and the shape of the second mapping region 132 far from the boundary of the first mapping region 131 are also circular.
Since the spacer region 133 has a ring shape, the spacer region 133 includes two boundaries, and the spacer region 133 is disposed between the first patterning region 131 and the second patterning region 132, so that one boundary of the spacer region 133 overlaps with the boundary of the first patterning region 131 and the other boundary overlaps with the boundary of the second patterning region 132 adjacent to the first patterning region 131. Based on this, it should be understood that the shape of both boundaries of the spacer region 133 is the same as the shape of the first patterning region 131.
In the embodiment of the present invention, since the widths of the spacing regions 133 are equal everywhere and the widths of the second patterning regions 132 are equal everywhere, when light is emitted to the mask plate 13, the influence of the second patterning regions 132 on the transmittance of light around the first patterning region 131 is the same, for example, when the first patterning region 131 and the second patterning region 132 are light transmitting regions, the second patterning region 132 can uniformly compensate the exposure amount around the first patterning region 131, so that when a negative photoresist is exposed by using the mask plate 13, the region exposed by the light through the second patterning region 132 uniformly surrounds a circle of the region exposed by the light through the first patterning region 131. Compared with the patterns formed by using the mask plate 13 provided in the related art, the mask plate 13 provided by the invention can ensure that the width of the formed patterns close to the surface of the mask plate is the same along each direction.
In forming a pattern such as the spacer 11 using the mask plate 13, in order to increase the size of the second surface 111 (surface close to the mask plate 13) without increasing the size of the first surface 110 (surface far from the mask plate 13) of the spacer 11, in some embodiments, as shown in fig. 12, the width H of the second patterning region 132 2 Comprises the following steps:
where θ is the exposure angle of the exposure machine (i.e., the parallel half angle of the exposure machine), H 1 Is the width of the spacer region 133, L is the maximum size of the first patterning region 131, D is the maximum size of the pattern to be formed, and T is the distance between the mask plate 13 and the substrate on which the pattern is to be formed.
In some embodiments, the distance T between reticle 13 and the substrate to be patterned is 160um, and the exposure angle of the exposure machine is 2 ° ± 0.2 °.
Referring to FIG. 12, 2 x { T × tan θ + H 1 +H 2 H + L = D, which can be derived from the formulaWidth H of second mapping region 132 2 Comprises the following steps:in the case where the distance T between the mask plate 13 and the substrate to be patterned is 160um and the exposure angle of the exposure machine is 2 ° ± 0.2 °, the width H of the second patterning region 132 2 Comprises the following steps:
in the embodiment of the present invention, the width H of the second mapping region 132 is larger 2 Comprises the following steps:thus, when the spacer 11 is formed using the mask 13, the size of the second surface 111 can be effectively increased without increasing the size of the first surface 110 of the spacer 11.
Considering that if the width of the spacer region 133 is smaller than the resolution of the exposure machine, the first patterning region 131 and the second patterning region 132 cannot be separated, and thus the first patterning region 131 and the second patterning region 132 form a whole during exposure, in this way, when a pattern is formed after exposure by using the mask plate 13 and development, the sizes of the surface of the pattern close to the mask plate 13 and the surface far from the mask plate 13 are both increased, and thus the size difference between the surface of the pattern close to the mask plate 13 and the surface far from the mask plate 13 may be small. In the embodiment of the present invention, when designing the mask plate 13, it is considered that when forming the pattern by the first patterning region 131 and the second patterning region 132, a size difference between a surface of the formed pattern close to the mask plate 13 and a surface far from the mask plate 13 is reduced, and a size of the surface close to the mask plate 13 is increased. Based on this, in some embodiments, the width of the spacer region 133 is greater than or equal to the resolution of the exposure machine.
Considering that if the width of the second patterning region 132 is larger than the resolution of the exposure machine, mask exposure is performed using the mask plate 13, the pattern formed by the first patterning region 131 and the pattern formed by the second patterning region 132 are independent of each other when the pattern formed after development is performed. In the embodiment of the present invention, when designing the mask 13, the pattern formed by the first patterning region 131 and the second patterning region 132 should be an integral body. Based on this, in some embodiments, the width of the second patterning region 132 is less than or equal to the resolution of the exposure machine.
The embodiment of the present invention further provides a method for manufacturing the substrate 10, which can be used to manufacture the substrate 10, where the method for manufacturing the substrate 10 includes:
s100, forming a photoresist film on the base plate 100.
Here, a photoresist film may be formed on the base plate 100 using a method such as coating or spin coating.
And S101, carrying out mask exposure on the photoresist film by using the mask plate 13, and developing to form the spacer 11.
It should be understood that, in the case where the photoresist film is a negative photoresist, the photoresist in the light-transmitting region is retained and the photoresist in the non-light-transmitting region is removed after the exposure by the mask 13; and under the condition that the photoresist film is a positive photoresist, the photoresist in the non-light-transmitting area is reserved after development, and the photoresist in the light-transmitting area is removed.
Based on the above, when the mask 13 is used for mask exposure, in the case that the photoresist film is a negative photoresist, the mask 13 should select the first patterning region 131 and the second patterning region 132 as the light-transmitting regions, and the spacer region 133 as the non-light-transmitting region; in the case where the photoresist film is a positive photoresist, the first patterning region 131 and the second patterning region 132 are selected as non-light-transmitting regions, and the spacer region is a light-transmitting region of the mask 13. Fig. 11 and 13 are schematic views each showing a case where the photoresist film is a negative photoresist, the first patterning region 131 and the second patterning region 132 are light-transmitting regions, and the spacer region 133 is a non-light-transmitting region.
The embodiment of the invention provides a method for preparing a substrate 10, which comprises the steps of forming a photoresist film on a bottom plate 100, carrying out mask exposure on the photoresist film by using the mask plate 13, and forming a spacer 11 after developing. In the case that the photoresist film is a negative photoresist, because the mask plate 13 includes the first patterning region 131, the second patterning region 132 and the spacer region 133, both the first patterning region 131 and the second patterning region 132 are light-transmitting regions, and the spacer region 133 is a non-light-transmitting region, when the negative photoresist film is exposed by the mask plate 13, light can be emitted to the negative photoresist film through the first patterning region 131, and can also be emitted to the photoresist film through the second patterning region 132, so that the second patterning region 132 can perform light compensation on the first patterning region 131, and increase the area of the negative photoresist film exposure region, thereby increasing the size of the developed pattern close to the surface of the mask plate 13, and reducing the size difference between the formed pattern close to the surface of the mask plate 13 and the surface far from the mask plate 13.
In the case that the photoresist film is a positive photoresist, because the mask plate 13 includes the first patterning region 131, the second patterning region 132 and the spacer region 133, both the first patterning region 131 and the second patterning region 132 are non-light-transmitting regions, and the spacer region 133 is a light-transmitting region, when the mask plate 13 is used to expose the positive photoresist film, except that the first patterning region 131 blocks light from being incident on the positive photoresist film, the second patterning region 132 also blocks light from being incident on the positive photoresist film, thus, the second patterning region 132 can compensate the light shielding of the first patterning region 131, and reduce the area of the positive photoresist film exposure region, so that the size of the pattern formed after development close to the surface of the mask plate 13 is increased, and the size difference between the pattern formed close to the surface of the mask plate 13 and the surface far from the mask plate 13 is reduced.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A method of preparing a substrate, comprising:
forming a photoresist film on the bottom plate, wherein the material for forming the photoresist film is a positive photoresist or a negative photoresist;
carrying out mask exposure on the photoresist film by using a mask plate, and forming a spacer after developing;
the mask plate comprises a first patterning area, a second patterning area and an interval area arranged between the first patterning area and the second patterning area;
the second patterning area and the spacing area are both annular, and the second patterning area surrounds the first patterning area;
the first composition area and the second composition area are both light-transmitting areas, and the spacer area is a non-light-transmitting area; or both the first composition area and the second composition area are non-light-transmitting areas, and the spacer area is a light-transmitting area;
width H of the second mapping region 2 Comprises the following steps:
wherein θ is the exposure angle of the exposure machine, H 1 The width of the spacer region is L, the maximum size of the first patterning region is L, the maximum size of the pattern to be formed is D, and the distance between the mask plate and the substrate on which the pattern is to be formed is T.
2. The method of manufacturing a substrate according to claim 1, wherein a shape of the second patterning region boundary is the same as a shape of the first patterning region; the width of the spacer is equal everywhere; the width of the second mapping zone is equal everywhere.
3. The method of manufacturing a substrate according to any one of claims 1 to 2, wherein the width of the spacer is greater than or equal to the resolution of an exposure machine.
4. The method of producing a substrate according to any one of claims 1 to 2, wherein the width of the second patterning region is less than or equal to the resolution of an exposure machine.
5. The method of claim 1, wherein the first patterning region has a shape that is one of circular, quadrilateral, hexagonal, or octagonal.
6. The method for producing a substrate according to any one of claims 1 to 2 or 5,
under the condition that the photoresist film is a negative photoresist, the first patterning area and the second patterning area are light-transmitting areas, and the spacing area is a non-light-transmitting area;
under the condition that the photoresist film is a positive photoresist, the first patterning area and the second patterning area are non-light-transmitting areas, and the spacing area is a light-transmitting area.
7. A substrate obtained by the method for producing a substrate according to any one of claims 1 to 6, comprising:
a plurality of light emitting regions and a non-light emitting region defining a plurality of the light emitting regions;
the substrate comprises a bottom plate and a spacer which is arranged on the bottom plate and is positioned in the non-luminous area; the spacer is made of negative photoresist or positive photoresist;
the spacer comprises a first surface close to the bottom plate and a second surface far away from the bottom plate; the first surface is in the border of orthographic projection surrounds the second surface is in the border of orthographic projection on the bottom plate, the first surface is in the border of orthographic projection on the bottom plate with the second surface is in the scope of interval a between the border of orthographic projection on the bottom plate is 0 < a ≤ 4.5um.
8. The substrate of claim 7, wherein a distance a between a boundary of an orthographic projection of the first surface on the base plate and a boundary of an orthographic projection of the second surface on the base plate ranges from 3um ≦ a ≦ 3.5um.
9. The substrate of claim 7, wherein the shape of the first surface and the shape of the second surface are the same, and wherein a spacing between a boundary of the orthographic projection of the first surface on the base plate and a boundary of the orthographic projection of the second surface on the base plate is equal at all locations.
10. The substrate of claim 7, wherein the first surface and the second surface are one of circular, quadrilateral, hexagonal, or octagonal in shape.
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