TWM583556U - Fine metal mask - Google Patents

Abstract

A fine metal mask has a mask body and a tension frame. The mask body has a central pattern portion and reinforcement frame. The central pattern portion has a mask pattern. An inner edge of the reinforcement frame is connected with a peripheral edge of the central pattern portion. The reinforcement frame is thicker than the central pattern portion. The mask body is made by electroforming process. The tension frame overlaps on a top surface of the reinforcement frame and has a central opening corresponding in position with the central pattern portion. The fine metal mask is not easy to be deflected, has long lifetime, and can enhance the evaporation accuracy, and the yield and the resolution of OLED display.

Description

Fine metal mask

This creation is about a fine metal mask.

Organic Light-Emitting Diode (OLED) has been widely used in e-books, mobile phones and displays due to its advantages such as self-emission, wide viewing angle, power saving, high efficiency, response time, and thinness. in. The OLED includes a glass substrate, an organic light emitting material layer, and an electrode layer. The organic light emitting material layer is disposed on the glass substrate, and the electrode layer is disposed on the organic light emitting material layer. The organic light-emitting material layer is formed on a glass substrate by evaporation. The mask pattern of the fine metal mask used during evaporation not only determines the position of the organic light-emitting material layer on the glass substrate, but also determines the position of the organic light-emitting material layer on the glass substrate. The size and fineness of the organic light-emitting material layer further affect the pixel height of the OLED display.

In order to improve the pixels of the OLED display, the conventional technology uses a fine metal mask (FMM) to form an organic light-emitting material layer during the evaporation process. The manufacturing methods of the conventional fine metal mask are divided into an etching method and an electroforming method. Due to the disadvantages of overetching and mask pattern passivation, the position of the mask pattern of the fine metal mask made by electroforming can be more accurate and the aperture accuracy can reach several microns (μm) compared to the etching method. ).

However, the thickness of the fine metal mask made by the electroforming method is relatively thin, and the overall structural strength is weak, and it is easy to be deflected due to external forces. As a result, the mask pattern cannot be accurately aligned with the position where the organic light emitting material layer is intended to be used. Problems, which in turn affect the service life of fine metal masks and the yield of OLED displays.

This creation provides a fine metal mask, which is not easy to be deflected by external forces, has a long service life, and can improve the yield of OLED displays.

In order to achieve one or more of the above purposes, the fine metal mask provided in this creation includes a mask body and a tension frame. The mask body includes a central pattern portion and a reinforced outer frame. The central pattern portion has a mask pattern to strengthen the outer frame. It has a top surface and an inner edge. The top surface is spaced from the central pattern portion. The inner edge is in contact with the top surface and connected to the outer edge of the central pattern portion. The thickness of the strengthened outer frame is greater than the thickness of the central pattern portion. Made by electroforming process. The tension frame is stacked on the top surface of the reinforced outer frame and has a central opening, and the central opening is opposite to the central pattern portion.

In an embodiment of the present invention, the above-mentioned central pattern portion further includes a first central portion of the first electroformed layer, a mask pattern is formed on the first central portion, and the reinforced frame further includes the first electroformed layer. The first peripheral edge portion and the second electroformed layer, the first peripheral edge portion is adjacent to the first central portion, the second electroformed layer is stacked on the first peripheral edge portion, and between the second electroformed layer and the first central portion A through hole is formed, the through hole communicates with a mask pattern, a tension frame is superimposed on the second electroformed layer, and a central opening communicates with the through hole and is opposite to the first central portion.

In an embodiment of the present invention, the reinforced outer frame further includes a third electroformed layer, the second electroformed layer further includes a second central portion and a second peripheral portion, and the second peripheral portion is adjacent to the second central portion. The third electroformed layer is disposed on the second peripheral edge portion. A through hole is formed between the third electroformed layer and the second central portion, and the through hole communicates with the through hole. The tension frame is provided on the second electroformed layer through the third electroformed layer. On the second peripheral edge portion of the layer, the central opening communicates with the through hole through the through hole, and the central opening is opposite to the first central portion and the second central portion.

In an embodiment of the present invention, the above-mentioned fine metal mask further includes an adhesive layer, and the adhesive layer is disposed between the tension frame and the top surface of the reinforced outer frame.

In an embodiment of the present invention, the material of the mask body is selected from the group consisting of iron, cobalt, nickel, and an alloy of at least two of the foregoing.

In an embodiment of the present invention, the material of the tension frame is selected from the group consisting of iron, cobalt, nickel, glass, and an alloy of at least two of iron, cobalt, and nickel.

In the fine metal mask of this creation, because the reinforced outer frame is connected to the outer edge of the central pattern portion, and the thickness of the reinforced outer frame is greater than the thickness of the central pattern layer, the central pattern portion can be kept flat during use or transportation After deflection, the mask pattern can be accurately aligned with the predetermined setting position of the organic light-emitting material layer after repeated use, thereby helping to improve the yield of the OLED display. And the fine metal mask is made by electroforming, so the position of the mask pattern is accurate and the aperture accuracy can reach several micrometers, and there is no problem of sewage treatment and etching solution management such as the etching method. In addition, through the tension frame, the fine metal mask can be kept relatively low in the deformation and displacement of the mask body during the entire process from manufacturing to the application in the evaporation process, so that the mask pattern in the central pattern part is kept intact. Therefore, it is beneficial to improve the accuracy of evaporation and the resolution of the OLED display.

In order to make the above and other objects, features, and advantages of this creation more comprehensible, embodiments are described below in detail with the accompanying drawings, as follows.

FIG. 1 is a schematic top view of a fine metal mask according to an embodiment of the present invention. Fig. 2 is a schematic cross-sectional view taken along the A-A section line of Fig. 1. Please refer to FIGS. 1 and 2. The fine metal mask 100 of this embodiment includes a mask body and a tension frame 130. The mask body includes a central pattern portion 110 and a reinforced outer frame 120. The central pattern portion 110 has a mask pattern 111 to strengthen The outer frame 120 has a top surface 121 and an inner edge 122. The top surface 121 is spaced from the central pattern portion 110. The inner edge 122 is in contact with the top surface 121 and is connected to the outer edge of the central pattern portion 110. The thickness of the outer frame 120 is strengthened. T1 is greater than the thickness T2 of the central pattern portion 110, and the mask body is made by electroforming technology. The tension frame 130 is stacked on the top surface 121 of the reinforced outer frame 120 and has a central opening 131, and the central opening 131 is opposite to the central pattern portion 110.

The above-mentioned central pattern portion 110 may further include a first central portion 210 of the first electroformed layer 200, a mask pattern 111 is formed on the first central portion 210, and the reinforced outer frame 120 may further include the first electroformed layer 200. The first peripheral edge portion 220 and the second electroformed layer 300, the first peripheral edge portion 220 is adjacent to the first central portion 210, the second electroformed layer 300 is stacked on the first peripheral edge portion 220, and the second electroformed layer A through hole 310 is formed between the 300 and the first central portion 210. The through hole 310 communicates with the mask pattern 111. The second electroformed layer 300 has an inner edge 122 and a top surface 121. A tension frame 130 is stacked on top of the reinforced outer frame 120. On the surface 121, that is, the tension frame 130 is stacked on the second electroformed layer 300. In this embodiment, the total thickness of the first peripheral edge portion 220 and the second electroformed layer 300 may be the thickness T1 of the reinforced outer frame 120, and the thickness of the first central portion 210 may be the thickness T2 of the central pattern portion 110. In addition, the aperture D1 of the mask pattern 111 may be smaller than the aperture D2 of the through-hole 310. For example, the aperture D1 of the mask pattern 111 may be, for example, 25 μm, and the aperture D2 of the through-hole 310 may be, for example, 80 μm. This is limited.

The above-mentioned fine metal mask 100 may include an adhesive layer disposed between the tension frame 130 and the top surface 121 of the reinforced outer frame 120. In other words, the tension frame 130 is attached to the top surface 121 of the reinforced outer frame 120, that is, That is, the tension frame 130 is attached to the second electroformed layer 300.

In the fine metal mask 100 of this embodiment, the mask pattern 111 of the central pattern portion 110 of the main body can be used to fabricate an organic light emitting material layer of the OLED. Since the reinforced outer frame 120 is connected to the outer edge of the central pattern portion 110, and strengthened The thickness of the outer frame 120 is greater than the thickness of the central pattern portion 110, so that the overall structural strength of the fine metal mask 100 can be improved, and the central pattern portion 110 can be prevented from being deformed by external forces during use or transportation, so that the central pattern portion 110 can Maintaining the flatness, the mask pattern 111 can be accurately aligned with the predetermined setting position of the organic light emitting material layer after repeated use. Therefore, the fine metal mask 100 of this embodiment not only has a long service life, but also helps to improve the yield of the OLED display. In addition, the mask body is made by the electroforming method, so the position of the mask pattern 111 is accurate and the aperture accuracy can reach several micrometers, and there is no problem of sewage treatment and etching solution management such as the etching method.

The mask body in this embodiment is formed on a substrate by an electroforming process during manufacture. The substrate is, for example, a glass substrate, and a metal layer is provided between the substrate and the mask body. After the mask body is formed on the substrate, the tension frame 130 is stacked on the reinforced outer frame 120; after the tension frame 130 is configured, the mask body is separated from the metal layer and the substrate, thereby obtaining this embodiment. Fine metal mask 100 (including the mask body and tension frame 130). The tension frame 130 provides sufficient tension to support the mask body. Even if the thickness of the mask body is relatively thin, the mask body can remain intact and avoid deformation when it is separated from the metal layer and the substrate. Furthermore, traditionally, when a mask is used for an evaporation process of an organic light-emitting material layer, three steps must be passed: before tension, tension, and evaporation; in the step of pre-tensioning In the step, the mask is joined to the frame; in the step of stretching the net, the mask and the frame are moved to the stretching machine to stretch the mask; in the evaporation step, the stretched mask is placed in The inside of the chamber is evaporated for evaporation. The structural stability of traditional masks is weak. Therefore, after the pre-tensioning step, it is necessary to go through the screen stretching step before the mask can be stretched for evaporation; and because the structural stability of traditional masks is weak, it is necessary to pre-tension. The netting step must be done with great care to avoid mask deformation. That is to say, the traditional mask has a weak structural stability, and therefore requires complex processing steps and a long processing time before it can be used for evaporation. In contrast, in this embodiment, with the tension frame 130, the fine metal mask 100 as a whole can maintain a considerable degree of structural stability. When applied to the organic light-emitting material evaporation process, the steps required for the pre-tensioning and the stretching steps can be reduced. In time, vapor deposition can be performed directly without even stretching (screening step), thereby reducing the time for fabricating the organic light-emitting material layer and reducing the possibility of mask deformation caused by masking on the pre-stretched screen and the screen. According to this, during the entire process from the fabrication of the fine metal mask 100 of this embodiment to the evaporation process, the deformation and displacement of the mask body can be kept relatively low, so that the mask pattern 111 of the central pattern portion 110 is maintained. Complete, which is conducive to improving the accuracy of evaporation and the resolution of the OLED display.

FIG. 3 is a flowchart of a method for manufacturing a fine metal mask according to an embodiment of the present invention. Referring to FIG. 3, the method for manufacturing a fine metal mask in this embodiment includes: Step S100: Sputtering to form a metal layer on a glass substrate; Step S200: Electroforming to form a central pattern portion and strengthening the outer frame on the metal layer to obtain A mask body is on the metal layer; and step S300: the tension frame is superposed on the top surface of the reinforced outer frame and the metal layer and the glass substrate are removed to obtain a fine metal mask. The method for manufacturing a fine metal mask of this embodiment can obtain a fine metal mask 100 as shown in FIG. 1.

FIG. 4 is a flowchart of step S200 of the method for manufacturing the fine metal mask of FIG. 3. Referring to FIGS. 3 and 4, step S200 may further include: step S210: forming a first patterned photoresist layer on the metal layer; step S220: electroforming to form a first electroforming layer on a first predetermined electroforming surface of the metal layer Step S230: forming a second patterned photoresist layer on the first central portion of the first electroformed layer and the first patterned photoresist layer; step S240: electroforming to form a second electroformed layer on the first electroformed layer On the second predetermined electroformed surface of the layer; and step S250: removing the first patterned photoresist layer and the second patterned photoresist layer to obtain a mask body on the metal layer.

FIG. 5A is a schematic diagram corresponding to step S100 in FIG. 3. Please refer to FIGS. 3 and 5A. In step S100, a metal layer 500 is formed on the glass substrate 510 by sputtering. The material of the metal layer 500 may be, but is not limited to, conductive metals such as copper, platinum, gold, and silver, and glass. The material of the substrate 510 may be, but is not limited to, tin oxyfluoride, indium tin oxide, or silicon. The metal layer 500 can be formed on the glass substrate 510 by sputtering methods such as direct current sputtering, radio frequency sputtering, or tri-electrode sputtering, and the present invention does not limit the sputtering method.

FIG. 5B is a schematic diagram corresponding to step S210 in FIG. 4. 4 and 5B, in step S210, a first patterned photoresist layer 600 is formed on the metal layer 500, and the first patterned photoresist layer 600 exposes a first predetermined electroformed surface 501 of the metal layer 500; In this embodiment, the first patterned photoresist layer 600 is a dry film photoresist, but is not limited thereto. In other embodiments, the first patterned photoresist layer 600 may also be a wet film photoresist. In addition, in this embodiment, the first patterned photoresist layer 600 is a positive photoresist, but is not limited thereto. In other embodiments, the first patterned photoresist layer 600 may also be a negative photoresist.

FIG. 5C is a schematic diagram corresponding to step S220 in FIG. 4. Please refer to FIGS. 4 and 5C. In step S220, the first electroformed layer 200 is electroformed on the first predetermined electroformed surface 501. The first electroformed layer 200 has a first central portion 210 and is adjacent to the first electroformed layer 200. A first peripheral edge portion 220 of a central portion 210 is connected to the first patterned photoresist layer 600. The first peripheral edge portion 220 has a second predetermined electroformed surface 221. The material of the first electroformed layer 200 may be, for example, iron, cobalt, nickel, or an alloy of at least two of the foregoing. In addition, the thickness T2 of the first electroformed layer 200 may be, for example, 3 μm to 5 μm, and further, for example, 4 μm, but is not limited thereto.

FIG. 5D is a schematic diagram corresponding to step S230 in FIG. 4. Please refer to FIGS. 4 and 5D. In step S230, a second patterned photoresist layer 610 is formed on the first central portion 210 and the first patterned photoresist layer 600 of the first electroformed layer 200. The second patterned photoresist layer 610 exposes a second predetermined electroformed surface 221. In this embodiment, the second patterned photoresist layer 610 is a dry film photoresist, but is not limited thereto. In other embodiments, the second patterned photoresist layer 610 may also be a wet film photoresist. In addition, in this embodiment, the second patterned photoresist layer 610 is a positive photoresist, but is not limited thereto. In other embodiments, the second patterned photoresist layer 610 may also be a negative photoresist.

FIG. 5E is a schematic diagram corresponding to step S240 in FIG. 4. 4 and 5E, in step S240, the second electroformed layer 300 is formed on the second predetermined electroformed surface 221 of the first electroformed layer 200 by electroforming. The material of the second electroformed layer 300 may be, for example, iron, cobalt, nickel, or an alloy of at least two of the foregoing. In addition, the total thickness T1 of the second electroformed layer 300 and the first peripheral edge portion 220 may be, for example, 50 μm to 100 μm, and further, for example, 75 μm, but is not limited thereto. The thickness T2 of the first electroformed layer 200 may be equal to the thickness of the first peripheral edge portion 220.

FIG. 5F is a schematic diagram corresponding to step S250 in FIG. 4. Please refer to FIGS. 2, 4, 5E, and 5F. In step S250, the first patterned photoresist layer 600 and the second patterned photoresist layer 610 are removed to obtain a mask body on the metal layer 500. After the first patterned photoresist layer 600 is removed, a mask pattern 111 is formed on the first central portion 210. After the second patterned photoresist layer 610 is removed, a through hole 310 can be formed in the second electroformed layer 300 and the first Between the central portion 210, the through hole 310 communicates with the mask pattern 111, and the mask body may include the first electroformed layer 200, the second electroformed layer 300, the through hole 310, and the mask pattern 111. Further, the central pattern The portion 110 may further include a first central portion 210, and the reinforced outer frame 120 may further include a first peripheral portion 220 and a second electroformed layer 300, and the second electroformed layer 300 is stacked on the first peripheral portion 220. In addition, the mask pattern 111 may have a regular shape such as a rectangle, a rhombus, a circle, or a polygon, but may also have an irregular shape. The shape and aperture of the mask pattern 111 are not limited in this creation.

In addition, in the method for manufacturing a fine metal mask in this embodiment, the first patterned photoresist layer 600 can be obtained by exposing the photoresist and developing the exposed photoresist using, for example, a photolithography technique; similarly, the second pattern The photoresist layer 610 can also be obtained by lithography technology, but this creation is not limited to this.

FIG. 6 is a schematic diagram corresponding to step S300 in FIG. 3. Please refer to FIGS. 2, 3, 5F, and 6. In step S300, the tension frame 130 is stacked on the top surface 121 of the reinforced outer frame 120. Next, the tension frame 130 and the mask body and the metal layer 500 and the glass substrate are stacked. When 510 is separated, a fine metal mask 100 is obtained. In this embodiment, the tension frame 130 is stacked on the second electroformed layer 300, and the tension frame 130 may be attached to the second electroformed layer 300 through the adhesive layer 140. The material of the adhesive layer 140 may be a light-cured adhesive. Agents, but not limited to this. When the tension frame 130 is fixed with a light-curing adhesive, the position of the tension frame 130 can be fine-tuned and corrected before the light-curing adhesive is formed into an adhesive layer 140 by means of light. In this way, the tension frame 130 can be accurately made. It is set at a predetermined position, thereby improving the yield of the fine metal mask 100.

FIG. 7 is a flowchart of step S300 of a method for manufacturing a fine metal mask according to an embodiment of the present invention. Referring to FIG. 7, step S300 may further include: step S310: superimposing the tension frame on the second electroformed layer; step S320: covering the first protective film that closes the central opening on the tension frame; and step S330: removing metal Layer and a glass substrate and a second protective film covering the closed mask pattern on one side of the first electroformed layer away from the second electroformed layer to obtain a fine metal mask between the first protective film and the second protective film.

8A, 8B, and 8C are schematic diagrams corresponding to steps S310, S320, and S330 in FIG. Please refer to FIGS. 5F, 7, 8A, 8B, and 8C. In step S310, the tension frame 130 is stacked on the second electroformed layer 300 through the adhesive layer 140. In step S320, the first protective film 700 is covered on On the tension frame 130, and the first protective film 700 closes the central opening 131; in step S330, after the metal layer 500 and the glass substrate 510 are removed, the second protective film 710 is covered on the first electroformed layer 200 away from the second One side of the electroformed layer 300 can close an end of the mask pattern 111 away from the through hole 310, so as to obtain a fine metal mask 100 between the first protective film 700 and the second protective film 710. In addition, the first protective film 700 and the second protective film 710 may be, for example, a photo-curable debonding film, but are not limited thereto.

In the method for manufacturing the fine metal mask of this embodiment, by covering the fine metal mask 100 with the first protective film 700 and the second protective film 710, the advantage of protecting the fine metal mask 100 from dust or abrasion can be achieved. .

In addition, in the method for manufacturing a fine metal mask in this embodiment, the material of the tension frame 130 may be glass, iron, cobalt, nickel, glass, or an alloy of at least two of iron, cobalt, and nickel. When the material of the tension frame 130 is glass, since the substrate used for the evaporation of the organic light-emitting material layer is also glass, the evaporation material passes through the mask pattern of the mask body and is plated on the substrate during the evaporation. In the predetermined position above, when the substrate and the tension frame 130 are also glass, the expansion and contraction rates of the substrate and the tension frame 130 are similar; accordingly, when the evaporation heat is applied, the tension frame 130 and the substrate can have similar expansion and contraction rates. Expansion, the mask body expands while being affected by the tension frame 130, and can be deformed by being pulled by the tension frame 130, so that the vapor deposition material can be more accurately deposited on a predetermined position on the substrate, and the evaporation accuracy is further improved. And OLED display resolution.

FIG. 9 is a schematic diagram of a fine metal mask according to an embodiment of the present invention. Referring to FIG. 9, in the fine metal mask 100 of this embodiment, the reinforced outer frame 120 may further include a third electroformed layer 400, and the second electroformed layer 300 may further include a second central portion 320 and a second peripheral portion 330. The second peripheral edge portion 330 is adjacent to the second central portion 320, the third electroformed layer 400 is stacked on the second peripheral edge portion 330, and a through hole 410 is formed between the third electroformed layer 400 and the second central portion 320. The hole 410 communicates with the through hole 310, the tension frame 130 is stacked on the second peripheral edge portion 330 of the second electroformed layer 300 via the third electroformed layer 400, and the central opening 131 communicates with the through hole 310 via the through hole 410, and the central opening 131 is opposite to the first central portion 210 and the second central portion 320. In this embodiment, the thickness T1 of the reinforced outer frame 120 is the total thickness of the third electroformed layer 400, the second peripheral edge portion 330, and the first peripheral edge portion 220. In addition, the hole diameter D2 of the through hole 310 is smaller than the hole diameter D3 of the through hole 410. In addition, the tension frame 130 may be attached to the third electroformed layer 400 through the adhesive layer 140, that is, the tension frame 130 may be stacked on the second electroformed layer 300 through the adhesive layer 140 and the third electroformed layer 400. On the second peripheral edge portion 330.

FIG. 10 is a flowchart of step S200 of a method for manufacturing a fine metal mask according to an embodiment of the present invention. Referring to FIG. 8, in the method for manufacturing a fine metal mask in this embodiment, step S200 between steps S240 and S250 may further include: step S260: forming a third patterned photoresist layer on the second electroformed layer. The two central portions and the second patterned photoresist layer; and step S270: electroforming to form a third electroforming layer on a third predetermined electroforming surface of the second peripheral portion of the second electroforming layer. The method for manufacturing a fine metal mask of this embodiment can obtain a fine metal mask 100 as shown in FIG. 9.

FIG. 11A is a schematic diagram corresponding to step S240 in FIG. 10. Please refer to FIGS. 10 and 11A. In step S240, the second electroformed layer 300 may further have a second central portion 320 and a second peripheral edge portion 330 adjacent to the second central portion 320. The second central portion 320 and the second pattern The photoresist layer 610 is connected, and the second peripheral edge portion 330 has a third predetermined electroformed surface 331. In addition, the thickness of the first electroformed layer 200 (that is, the thickness T2 of the first electroformed layer 200) may be, for example, 3 μm to 5 μm, and further, for example, 5 μm, but is not limited thereto. The total thickness T3 of the second electroformed layer 300 and the first peripheral edge portion 220 may be, for example, 20 μm to 100 μm, and further, for example, 30 μm, but is not limited thereto.

FIG. 11B is a schematic diagram corresponding to step S260 in FIG. 10. Please refer to FIGS. 10 and 11B. In step S260, a third patterned photoresist layer 620 is formed on the second central portion 320 and the second patterned photoresist layer 610 of the second electroformed layer 300. The third patterned photoresist layer 620 exposes a third predetermined electroformed surface 331. In this embodiment, the third patterned photoresist layer 620 is a dry film photoresist, but is not limited thereto. In other embodiments, the third patterned photoresist layer 620 may also be a wet film photoresist. In addition, in this embodiment, the third patterned photoresist layer 620 is a positive photoresist, but is not limited thereto. In other embodiments, the third patterned photoresist layer 620 may be a negative photoresist.

FIG. 11C is a schematic diagram corresponding to step S270 in FIG. 10. Referring to FIGS. 10 and 11C, in step S270, the third electroformed layer 400 is formed on the third predetermined electroformed surface 331 of the second electroformed layer 300 by electroforming. The material of the third electroformed layer 400 may be, for example, iron, cobalt, nickel, or an alloy of at least two of the foregoing. In addition, the total thickness of the third electroformed layer 400, the second peripheral edge portion 330, and the first peripheral edge portion 220 (ie, the thickness T1 of the reinforced outer frame 120) may be, for example, 50 μm to 100 μm, but is not limited thereto.

FIG. 11D is a schematic diagram corresponding to step S250 in FIG. 10. Please refer to FIGS. 9, 10, 11C, and 11D. In step S250, the first patterned photoresist layer 600, the second patterned photoresist layer 610, and the third patterned photoresist layer 620 are removed to obtain The mask body is on the metal layer 500. After the third patterned photoresist layer 620 is removed, a through hole 410 may be formed between the third electroformed layer 400 and the second central portion 320. The through hole 410 is communicated with the through hole 310, and the reinforced frame 120 may further include a third Electroformed layer 400.

In addition, in the method for manufacturing a fine metal mask in this embodiment, the first patterned photoresist layer 600 may be obtained by exposing the photoresist and developing the exposed photoresist using, for example, a photolithography technique; the same, the second The patterned photoresist layer 610 and the third patterned photoresist layer 620 can also be obtained by lithography technology, but this creation is not limited to this.

In the method for manufacturing the fine metal mask 100 of this embodiment, a relatively thin first electroformed layer 200 is formed first, and then a thickened second electroformed layer 300 and a third electroformed layer are formed in a thickened manner. Layer 400 to obtain a reinforced outer frame 120. Among them, since the mask pattern 111 is formed on the first central portion 210 of the first electroformed layer 200 that is formed first and is relatively thin, the position, shape, and aperture of the mask pattern 111 can be accurately controlled. Helps improve the yield of OLED displays.

FIG. 12 is a flowchart of step S300a of a method for manufacturing a fine metal mask according to an embodiment of the present invention. Referring to FIG. 12, step S300a may further include: step S310a: the tension frame is laminated on the second electroformed layer through a third electroforming layer; step S320a: a first protective film covering the central opening on the tension frame; and step S330a: The second protective film that removes the metal layer and the glass substrate and covers the closed mask pattern is on a side of the first electroformed layer away from the second and third electroformed layers to obtain a fine metal mask on the first Between the protective film and the second protective film.

13A, 13B, and 13C are schematic diagrams corresponding to steps S310a, S320a, and S330a in FIG. Please refer to FIGS. 11D, 12, 13A, 13B, and 13C. In step S310a, the tension frame 130 is stacked on the second peripheral edge portion 330 of the second electroformed layer 300 via the third electroformed layer 400; in step S320a The first protective film 700 is covered on the tension frame 130, and the first protective film 700 may close the central opening 131. In step S330a, the metal layer 500 and the glass substrate 510 are removed, and then the second protective film 710 is removed. Covering one side of the first electroformed layer 200 away from the second electroformed layer 300 and the third electroformed layer 400, the end of the mask pattern 111 away from the through hole 310 can be closed, thereby obtaining a fine metal mask 100 at the first Between the protective film 700 and the second protective film 710. In addition, the first protective film 700 and the second protective film 710 may be, for example, a photo-curable debinding film, but are not limited thereto.

In the method for manufacturing the fine metal mask of this embodiment, by covering the fine metal mask 100 with the first protective film 700 and the second protective film 710, the advantage of protecting the fine metal mask 100 from dust or abrasion can be achieved.

In summary, in the fine metal mask of this creative embodiment, since the reinforced outer frame is connected to the outer edge of the central pattern portion, and the thickness of the reinforced outer frame is greater than the thickness of the central pattern layer, the central pattern portion can be used or During the transportation, it is kept flat and not easily bent, and the mask pattern can be precisely aligned with the predetermined setting position of the organic light emitting material layer after repeated use, which is conducive to improving the yield of the OLED display. And the fine metal mask is made by electroforming, so the position of the mask pattern is accurate and the aperture accuracy can reach several micrometers, and there is no problem of sewage treatment and etching solution management such as the etching method. In addition, through the tension frame, the fine metal mask can be kept relatively low in the deformation and displacement of the mask body during the entire process from manufacturing to the application in the evaporation process, so that the mask pattern in the central pattern part is kept intact. Therefore, it is beneficial to improve the accuracy of evaporation and the resolution of the OLED display.

Although this creation has been disclosed as an example above, it is not intended to limit this creation. Those with ordinary knowledge in the technical field to which this creation belongs can make some changes and decorations without departing from the spirit and scope of this creation. Therefore, the scope of protection of this creation shall be determined by the scope of the attached patent application.

100‧‧‧fine metal mask
110‧‧‧ Central Pattern Department
111‧‧‧Mask pattern
120‧‧‧ Enhanced frame
121‧‧‧Top
122‧‧‧Inner edge
130‧‧‧tension frame
131‧‧‧ central opening
140‧‧‧ Adhesive layer
200‧‧‧The first electroformed layer
210‧‧‧First Central
220‧‧‧ the first peripheral edge
221‧‧‧ Second scheduled electroformed surface
300‧‧‧Second electroformed layer
310‧‧‧through hole
320‧‧‧Second Central Section
330‧‧‧Second peripheral edge
331‧‧‧ Third scheduled electroformed surface
400‧‧‧ third electroformed layer
410‧‧‧through hole
500‧‧‧ metal layer
501‧‧‧The first scheduled electroformed surface
510‧‧‧ glass substrate
600‧‧‧The first patterned photoresist layer
610‧‧‧Second patterned photoresist layer
620‧‧‧The third patterned photoresist layer
700‧‧‧first protective film
710‧‧‧Second protective film
T1, T2, T3‧‧‧thickness
D1, D2, D3‧‧‧‧Aperture
S100, S200, S210, S220, S230, S240, S250, S260, S270, S300, S300a, S310, S310a, S320, S320a, S330, S330a‧‧‧Steps

1 is a schematic top view of a fine metal mask according to an embodiment of the present invention;
2 is a schematic cross-sectional view taken along the AA section line of FIG. 1;
3 is a flowchart of a method for manufacturing a fine metal mask according to an embodiment of the present invention;
4 is a flowchart of step S200 of the method for manufacturing a fine metal mask of FIG. 3;
5A is a schematic diagram corresponding to step S100 in FIG. 3;
5B is a schematic diagram corresponding to step S210 in FIG. 4;
5C is a schematic diagram corresponding to step S220 in FIG. 4;
5D is a schematic diagram corresponding to step S230 in FIG. 4;
5E is a schematic diagram corresponding to step S240 in FIG. 4;
5F is a schematic diagram corresponding to step S250 in FIG. 4;
6 is a schematic diagram corresponding to step S300 in FIG. 3;
7 is a flowchart of step S300 of a method for manufacturing a fine metal mask according to an embodiment of the present invention;
FIG. 8A is a schematic diagram corresponding to step S310 in FIG. 7; FIG.
8B is a schematic diagram corresponding to step S320 in FIG. 7;
8C is a schematic diagram corresponding to step S330 in FIG. 7;
9 is a schematic diagram of a fine metal mask according to an embodiment of the present invention;
10 is a flowchart of step S200 of a method for manufacturing a fine metal mask according to an embodiment of the present invention;
FIG. 11A is a schematic diagram corresponding to step S240 in FIG. 10; FIG.
FIG. 11B is a schematic diagram corresponding to step S260 in FIG. 10; FIG.
FIG. 11C is a schematic diagram corresponding to step S270 in FIG. 10;
11D is a schematic diagram corresponding to step S250 in FIG. 10; FIG. 12 is a flowchart of step S300a of a method for manufacturing a fine metal mask according to an embodiment of the present invention;
FIG. 13A is a schematic diagram corresponding to step S310a in FIG. 12;
FIG. 13B is a schematic diagram corresponding to step S320a in FIG. 12; and FIG. 13C is a schematic diagram corresponding to step S330a in FIG.

Claims (6)

A fine metal mask including:
A mask body includes a central pattern portion and a reinforced outer frame. The central pattern portion has a mask pattern. The reinforced outer frame has a top surface and an inner edge. The top surface is spaced from the central pattern portion. The inner edge is in contact with the top surface and connected to an outer edge of the central pattern portion; the thickness of the reinforced outer frame is greater than the thickness of the central pattern portion; and the mask body is made by an electroforming process; and The tension frame is stacked on the top surface of the reinforced outer frame and has a central opening, and the central opening is opposite to the central pattern portion. The fine metal mask according to claim 1, wherein the central pattern portion further includes a first central portion of a first electroformed layer, the mask pattern is formed on the first central portion, and the reinforced outer portion The frame further includes a first peripheral edge portion of the first electroformed layer and a second electroformed layer, the first peripheral edge portion is adjacent to the first central portion, and the second electroformed layer is disposed on the first periphery. On the edge portion, a through hole is formed between the second electroformed layer and the first central portion, the through hole communicates with the mask pattern, the tension frame is superposed on the second electroformed layer, and the central opening communicates The through hole is opposite to the first central portion. The fine metal mask according to claim 2, wherein the reinforced outer frame further includes a third electroformed layer, the second electroformed layer further includes a second central portion and a second peripheral portion, and the second A peripheral edge portion is adjacent to the second central portion, and the third electroformed layer is stacked on the second peripheral edge portion. A through hole is formed between the third electroformed layer and the second central portion, and the through hole communicates with the through hole. A hole, the tension frame is laminated on the second peripheral edge portion of the second electroformed layer via the third electroforming layer, the central opening communicates with the through hole through the through hole, and the central opening and the first central portion And the second central portion is opposite to each other. The fine metal mask according to claim 1, wherein the fine metal mask further includes an adhesive layer disposed between the tension frame and the top surface of the reinforced outer frame. The fine metal mask according to claim 1, wherein the material of the mask body is selected from the group consisting of iron, cobalt, nickel, and an alloy of at least two of the foregoing. The fine metal mask according to claim 1, wherein the material of the tension frame is selected from the group consisting of iron, cobalt, nickel, glass, and an alloy of at least two of iron, cobalt, and nickel.