CN110857462A

CN110857462A - Fine metal mask and method of manufacturing the same

Info

Publication number: CN110857462A
Application number: CN201810959149.0A
Authority: CN
Inventors: 石清堉
Original assignee: WIN OPTICAL TECHNOLOGY CO LTD
Current assignee: WIN OPTICAL TECHNOLOGY CO LTD
Priority date: 2018-08-22
Filing date: 2018-08-22
Publication date: 2020-03-03

Abstract

A fine metal mask has a central pattern portion and a reinforcing frame. The central pattern portion has a mask pattern. The reinforced outer frame is connected to the outer edge of the central pattern part. The thickness of the reinforcing frame is larger than that of the central pattern part, and the fine metal mask is manufactured by an electroforming process. A method of fabricating a fine metal mask, comprising the steps of: sputtering to form a metal layer on the glass substrate, electroforming to form a central pattern part and a reinforced frame on the metal layer, and removing the metal layer and the glass substrate to obtain a fine metal mask. The fine metal mask is not easy to generate deflection, has long service life and is beneficial to improving the yield of the organic light-emitting diode.

Description

Fine metal mask and method of manufacturing the same

Technical Field

The present invention relates to a fine metal mask and a method of fabricating the same.

Background

Organic Light-Emitting diodes (OLEDs) are widely used in electronic books, mobile phones, displays and other products because of their advantages of self-luminescence, wide viewing angle, power saving, high efficiency, short response time, Light weight and thin profile. The OLED comprises a glass substrate, an organic light-emitting material layer and an electrode layer, wherein the organic light-emitting material layer is arranged on the glass substrate, and the electrode layer is arranged on the organic light-emitting material layer. The organic light emitting material layer is formed on the glass substrate by an evaporation process, and the mask pattern of the fine metal mask used in the evaporation process determines not only the arrangement position of the organic light emitting material layer on the glass substrate, but also the size, fineness and the like of the organic light emitting material layer, thereby affecting the pixel height of the OLED display.

In order to improve the pixels of the OLED display, a conventional technique forms an organic light emitting material layer using a Fine Metal Mask (FMM) in an evaporation process. The conventional process for manufacturing a fine metal mask is divided into an etching process and an electroforming process. Since the etching method has the disadvantages of over-etching, passivation of the mask pattern, and the like, the mask pattern of the fine metal mask manufactured by the electroforming process can be positioned more accurately and the aperture accuracy can reach several micrometers (μm) compared to the etching process.

However, the fine metal mask manufactured by the electroforming process has a relatively thin thickness and a weak strength of the whole structure, and is easily deflected by an external force, so that the mask pattern cannot be precisely aligned with a position where the organic light emitting material layer is to be disposed, and the service life of the fine metal mask and the yield of the OLED display are affected.

Disclosure of Invention

The invention provides a fine metal mask which is not easy to deflect due to external force, has long service life and can improve the yield of an OLED display.

The invention also provides a method for manufacturing the fine metal mask, and the manufactured fine metal mask is not easy to deflect due to external force, has long service life and can improve the yield of the OLED display.

To achieve one or more of the above objects, the present invention provides a fine metal mask including a central pattern portion and a reinforcing frame. The central pattern portion has a mask pattern. The reinforced outer frame is connected to the outer edge of the central pattern part. The thickness of the reinforcing frame is larger than that of the central pattern part, and the fine metal mask is manufactured by an electroforming process.

To achieve one or more of the above objects, the present invention provides a method for fabricating a fine metal mask, comprising: sputtering to form a metal layer on the glass substrate; and electroforming the central pattern part and the strengthening frame on the metal layer, and removing the metal layer and the glass substrate to obtain the fine metal mask. The reinforcing frame is connected to the outer edge of the central pattern part, the central pattern part is provided with a mask pattern, the thickness of the reinforcing frame is larger than that of the central pattern part, and the fine metal mask comprises the central pattern part and the reinforcing frame.

In the fine metal mask and the method for manufacturing the fine metal mask of the present invention, the reinforcing outer frame is connected to the outer edge of the central pattern portion, and the thickness of the reinforcing outer frame is greater than that of the central pattern layer, so that the central pattern portion can be maintained flat and not easily bent during use or transportation, and the mask pattern can be accurately aligned to the predetermined setting position of the organic light emitting material layer after being used for many times. Therefore, the fine metal mask has long service life and is beneficial to improving the yield of OLED displays.

The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are described in detail with reference to the accompanying drawings.

Drawings

FIG. 1 is a schematic diagram of a fine metal mask according to one embodiment of the present invention;

FIG. 2 is a flow chart of a method of fabricating a fine metal mask in accordance with one embodiment of the present invention;

FIG. 3 is a flowchart of step S200 of a method of fabricating the fine metal mask of FIG. 2;

FIG. 4A is a schematic diagram corresponding to step S100 in FIG. 2;

FIG. 4B is a diagram corresponding to step S210 in FIG. 3;

FIG. 4C is a schematic diagram corresponding to step S220 in FIG. 3;

FIG. 4D is a schematic diagram corresponding to step S230 in FIG. 3;

FIG. 4E is a schematic diagram corresponding to step S240 in FIG. 3;

FIG. 4F is a diagram corresponding to step S250 in FIG. 3;

FIG. 5 is a flowchart of step S250 of a method for fabricating a fine metal mask according to one embodiment of the present invention;

FIG. 6A is a schematic diagram corresponding to step S251 in FIG. 5;

FIG. 6B is a schematic diagram corresponding to step S252 in FIG. 5;

FIG. 7 is a schematic diagram of a fine metal mask according to one embodiment of the present invention;

FIG. 8 is a flowchart of step S200 of a method for fabricating a fine metal mask according to one embodiment of the present invention;

FIG. 9A is a schematic diagram corresponding to step S240 in FIG. 8;

FIG. 9B is a diagram corresponding to step S260 in FIG. 8;

FIG. 9C is a diagram corresponding to step S270 in FIG. 8;

FIG. 9D is a diagram corresponding to step S250 in FIG. 8;

FIG. 10 is a flowchart of step S250 of a method for fabricating a fine metal mask according to one embodiment of the present invention;

fig. 11A is a schematic diagram corresponding to step S251A in fig. 10; and

fig. 11B is a schematic diagram corresponding to step S252a in fig. 10.

Detailed Description

FIG. 1 is a schematic diagram of a fine metal mask according to one embodiment of the present invention. Referring to fig. 1, the fine metal mask 100 of the present embodiment includes a central pattern portion 110 and a reinforcing frame 120, the central pattern portion 110 has a mask pattern 111, the reinforcing frame 120 is connected to an outer edge of the central pattern portion 110, a thickness T1 of the reinforcing frame 120 is greater than a thickness T2 of the central pattern portion 110, and the fine metal mask 100 is manufactured by an electroforming process.

The central pattern portion 110 may further include a first central portion 210 of the first electroformed layer 200, the mask pattern 111 is formed on the first central portion 210, and the reinforcing frame 120 may further include a first peripheral portion 220 of the first electroformed layer 200 and a second electroformed layer 300, the first peripheral portion 220 being adjacent to the first central portion 210, the second electroformed layer 300 being stacked on the first peripheral portion 220, a through hole 310 being formed between the second electroformed layer 300 and the first central portion 210, the through hole 310 communicating with the mask pattern 111. In the present embodiment, the total thickness of the first peripheral portion 220 and the second electroformed layer 300 may be the thickness T1 of the reinforcing frame 120, and the thickness of the first central portion 210 may be the thickness T2 of the central pattern portion 110. In addition, the aperture D1 of the mask pattern 111 may be smaller than the aperture D2 of the via 310, for example, the aperture D1 of the mask pattern 111 may be 25 μm, and the aperture D2 of the via 310 may be 80 μm, but not limited thereto.

In the fine metal mask 100 of the present embodiment, the mask pattern 111 of the central pattern portion 110 may be used to fabricate an organic light emitting material layer of an OLED, and since the reinforcing outer frame 120 is connected to the outer edge of the central pattern portion 110, and the thickness of the reinforcing outer frame 120 is greater than that of the central pattern layer, the overall structural strength of the fine metal mask 100 may be improved, and the central pattern portion 110 may be prevented from being bent due to an external force during use or transportation, so that the central pattern portion 110 may be maintained flat, and the mask pattern 111 may be accurately aligned to a predetermined position of the organic light emitting material layer after being used for multiple times. Therefore, the fine metal mask 100 of the present embodiment not only has a long lifetime, but also is beneficial to improving the yield of the OLED display. In addition, the fine metal mask 100 of the present embodiment is manufactured by an electroforming process, so that the position of the mask pattern 111 is accurate and the aperture precision can reach several micrometers, which is not as problematic as the sewage treatment and the etching solution management of the etching process.

FIG. 2 is a flow chart of a method of fabricating a fine metal mask according to one embodiment of the present invention. Referring to fig. 2, a method for fabricating a fine metal mask of the present embodiment includes: step S100: sputtering to form a metal layer on the glass substrate; and step S200: electroforming to form the central pattern part and the reinforced frame on the metal layer, and removing the metal layer and the glass substrate to obtain the fine metal mask. The method of fabricating the fine metal mask of the present embodiment can produce the fine metal mask 100 as shown in fig. 1.

Fig. 3 is a flowchart of step S200 of the method of manufacturing the fine metal mask of fig. 2. Referring to fig. 2 and 3, step S200 may further include: step S210: forming a first patterned photoresist layer on the metal layer; step S220: electroforming a first electroformed layer on a first predetermined electroforming surface of the metal layer; step S230: forming a second patterned photoresist layer on the first central portion of the first electroformed layer and the first patterned photoresist layer; step S240: electroforming a second electroformed layer on a second predetermined electroforming surface of the first electroformed layer; and step S250: the first patterned photoresist layer, the second patterned photoresist layer, the metal layer and the glass substrate are removed to obtain a fine metal mask.

Fig. 4A is a schematic diagram corresponding to step S100 in fig. 2. Referring to fig. 2 and 4A, in step S100, a metal layer 500 is formed on a glass substrate 510 by sputtering, the material of the metal layer 500 may be, but is not limited to, a conductive metal such as copper, platinum, gold, and silver, and the material of the glass substrate 510 may be, but is not limited to, tin oxyfluoride, indium tin oxide, or silicon. The metal layer 500 may be formed on the glass substrate 510 by sputtering, such as dc sputtering, rf sputtering, or triple sputtering, but the invention is not limited to the sputtering.

Fig. 4B is a schematic diagram corresponding to step S210 in fig. 3. Referring to fig. 3 and 4B, in step S210, a first patterned photoresist layer 600 is formed on the metal layer 500, and the first patterned photoresist layer 600 exposes the first predetermined electroforming surface 501 of the metal layer 500; in the present embodiment, the first patterned photoresist layer 600 is a dry film photoresist, but not limited thereto; in other embodiments, the first patterned photoresist layer 600 may also be a wet film photoresist. In addition, in the present embodiment, the first patterned photoresist layer 600 is a positive photoresist, but not limited thereto, and in other embodiments, the first patterned photoresist layer 600 may also be a negative photoresist.

Fig. 4C is a schematic diagram corresponding to step S220 in fig. 3. Referring to fig. 3 and 4C, in step S220, a first electroformed layer 200 is electroformed on the first predetermined electroformed surface 501, the first electroformed layer 200 has a first central portion 210 and a first peripheral portion 220 adjacent to the first central portion 210, the first central portion 210 is connected to the first patterned photoresist layer 600, and the first peripheral portion 220 has a second predetermined electroformed surface 221. The material of the first electroformed layer 200 may be, for example, iron, cobalt, nickel, or an alloy of at least two of the foregoing. The thickness T2 of the first electroformed layer 200 may be, for example, 3 μm to 5 μm, and more specifically, 4 μm, but is not limited thereto.

Fig. 4D is a schematic diagram corresponding to step S230 in fig. 3. Referring to fig. 3 and 4D, in step S230, a second patterned photoresist layer 610 is formed on the first central portion 210 of the first electroformed layer 200 and the first patterned photoresist layer 600. The second patterned photoresist layer 610 exposes the second electroforming surface 221. In the present embodiment, the second patterned photoresist layer 610 is a dry film photoresist, but not limited thereto; in other embodiments, the second patterned photoresist layer 610 may also be a wet film photoresist. In addition, in the embodiment, the second patterned photoresist layer 610 is a positive photoresist, but not limited thereto, and in other embodiments, the second patterned photoresist layer 610 may also be a negative photoresist.

Fig. 4E is a schematic diagram corresponding to step S240 in fig. 3. Referring to fig. 3 and 4E, in step S240, a second electroformed layer 300 is electroformed on a second predetermined electroformed surface 221 of the first electroformed layer 200. The material of the second electroformed layer 300 may be, for example, iron, cobalt, nickel, or an alloy of at least two of the foregoing. In addition, the total thickness T1 of the second electroformed layer 300 and the first peripheral portion 220 may be, for example, 50 μm to 100 μm, and more specifically, for example, 75 μm, but is not limited thereto. The thickness T2 of the first electroformed layer 200 may be equal to the thickness of the first peripheral portion 220.

Fig. 4F is a schematic diagram corresponding to step S250 in fig. 3. Referring to fig. 1, 3, 4E and 4F, in step S250, the first patterned photoresist layer 600, the second patterned photoresist layer 610, the metal layer 500 and the glass substrate 510 are removed, and then the fine metal mask 100 is obtained. The first patterned photoresist layer 600 is removed to form a mask pattern 111 on the first central portion 210, the second patterned photoresist layer 610 is removed to form a via 310 between the second electroformed layer 300 and the first central portion 210, the via 310 communicates with the mask pattern 111, and the fine metal mask 100 may include the first electroformed layer 200, the second electroformed layer 300, the via 310 and the mask pattern 111; further, the central pattern portion 110 may further include a first central portion 210, and the reinforcing frame 120 may further include a first peripheral portion 220 and a second electroformed layer 300, wherein the second electroformed layer 300 is stacked on the first peripheral portion 220. The mask pattern 111 may have a regular shape such as a rectangle, a diamond, a circle, or a polygon, but may have an irregular shape. The shape and aperture of the mask pattern 111 are not limited in the present invention.

In addition, in the manufacturing method of the fine metal mask of the present embodiment, the first patterned photoresist layer 600 can be obtained by exposing a photoresist and developing the exposed photoresist by using, for example, a photolithography technique; similarly, the second patterned photoresist layer 610 can also be obtained by photolithography, but the invention is not limited thereto.

FIG. 5 is a flowchart of step S250 of a method for fabricating a fine metal mask according to one embodiment of the present invention. Referring to fig. 5, step S250 may further include: step S251: removing the first patterned photoresist layer and the second patterned photoresist layer and covering the first protective film on the second electroformed layer and one side of the first electroformed layer adjacent to the second electroformed layer; and step S252: and removing the metal layer and the glass substrate and covering the second protective film on the side of the first electroformed layer away from the second electroformed layer to obtain a fine metal mask between the first protective film and the second protective film.

Fig. 6A and 6B are schematic diagrams corresponding to steps S251 and S252 in fig. 5. Referring to fig. 4E, 5, 6A and 6B, in step S251, the first patterned photoresist layer 600 and the second patterned photoresist layer 610 are removed to form a through hole 310 and a mask pattern 111, and the first protective film 700 is covered on the first protective film 700 at a side of the second electroformed layer 300 and the first electroformed layer 200 adjacent to the second electroformed layer 300, so as to seal an end of the through hole 310 away from the mask pattern 111; in step S252, after the metal layer 500 and the glass substrate 510 are removed, the second protection film 710 covers a side of the first electroformed layer 200 away from the second electroformed layer 300 to seal an end of the mask pattern 111 away from the through hole 310, thereby obtaining the fine metal mask 100 between the first protection film 700 and the second protection film 710. In addition, the first protection film 700 and the second protection film 710 may be, for example, a photo-curing resist film, but not limited thereto.

In the method for fabricating the fine metal mask of the present embodiment, the first protective film 700 and the second protective film 710 are covered on the fine metal mask 100, so that the fine metal mask 100 can be protected from dust or abrasion.

FIG. 7 is a schematic diagram of a fine metal mask according to one embodiment of the present invention. Referring to fig. 7, in the fine metal mask 100 of the present embodiment, the reinforcing frame 120 may further include a third electroformed layer 400, the second electroformed layer 300 may further include a second central portion 320 and a second peripheral portion 330, the second peripheral portion 330 is adjacent to the second central portion 320, the third electroformed layer 400 is stacked on the second peripheral portion 330, a through hole 410 is formed between the third electroformed layer 400 and the second central portion 320, and the through hole 410 is communicated with the through hole 310. In the present embodiment, the thickness T1 of the reinforcing frame 120 is the total thickness of the third electroformed layer 400, the second peripheral portion 330 and the first peripheral portion 220. In addition, the aperture D2 of the through hole 310 is smaller than the aperture D3 of the through hole 410.

FIG. 8 is a flowchart of step S200 of a method for fabricating a fine metal mask according to one embodiment of the present invention. Referring to fig. 8, in the method for manufacturing a fine metal mask of the present embodiment, the step S200 further includes between the step S240 and the step S250: step S260: forming a third patterned photoresist layer on the second electroformed layer and the second patterned photoresist layer; and step S270: electroforming a third electroformed layer on a third predetermined electroformed surface of the second peripheral portion of the second electroformed layer. The method of fabricating the fine metal mask of the present embodiment can produce the fine metal mask 100 as shown in fig. 6.

Fig. 9A is a schematic diagram corresponding to step S240 in fig. 8. Referring to fig. 8 and 9A, in step S240, the second electroformed layer 300 further has a second central portion 320 and a second peripheral portion 330 adjacent to the second central portion 320, the second central portion 320 is connected to the second patterned photoresist layer 610, and the second peripheral portion 330 has a third predetermined electroformed surface 331. In addition, the thickness of the first electroformed layer 200 (i.e., the thickness T2 of the first electroformed layer 200) may be, for example, 3 μm to 5 μm, and more specifically, 5 μm, but is not limited thereto. The total thickness T3 of the second electroformed layer 300 and the first peripheral portion 220 may be, for example, 20 μm to 100 μm, and more specifically, 30 μm, but is not limited thereto.

Fig. 9B is a schematic diagram corresponding to step S260 in fig. 8. Referring to fig. 8 and 9B, in step S260, a third patterned photoresist layer 620 is formed on the second central portion 320 of the second electroformed layer 300 and the second patterned photoresist layer 610. The third patterned photoresist layer 620 exposes the third electroforming surface 331. In the present embodiment, the third patterned photoresist layer 620 is a dry film photoresist, but not limited thereto; in other embodiments, the third patterned photoresist layer 620 may also be a wet film photoresist. In addition, in the embodiment, the third patterned photoresist layer 620 is a positive photoresist, but not limited thereto, and in other embodiments, the third patterned photoresist layer 620 may also be a negative photoresist.

Fig. 9C is a schematic diagram corresponding to step S270 in fig. 8. Referring to fig. 8 and 9C, in step S270, a third electroformed layer 400 is electroformed on a third predetermined electroformed surface 331 of the second electroformed layer 300. The material of the third electroformed layer 400 may be, for example, iron, cobalt, nickel, or an alloy of at least two of the foregoing. In addition, the total thickness of the third electroformed layer 400, the second peripheral portion 330 and the first peripheral portion 220 (i.e., the thickness T1 of the reinforcing frame 120) may be, for example, 50 μm to 100 μm, but is not limited thereto.

Fig. 9D is a schematic diagram corresponding to step S250 in fig. 8. Referring to fig. 7, 8, 9C and 9D, in step S250, the first patterned photoresist layer 600, the second patterned photoresist layer 610, the third patterned photoresist layer 620, the metal layer 500 and the glass substrate 510 are removed, and the fine metal mask 100 is obtained. After the third patterned photoresist layer 620 is removed, a through hole 410 can be formed between the third electroformed layer 400 and the second central portion 320, the through hole 410 is communicated with the through hole 310, and the reinforcing frame 120 can further include the third electroformed layer 400.

In addition, in the manufacturing method of the fine metal mask of the present embodiment, the first patterned photoresist layer 600 can be obtained by exposing a photoresist and developing the exposed photoresist by using, for example, a photolithography technique; similarly, the second patterned photoresist layer 610 and the third patterned photoresist layer 620 can be obtained by photolithography, but the invention is not limited thereto.

In the method for manufacturing the fine metal mask 100 of the present embodiment, the first electroformed layer 200 with a relatively thin thickness is formed first, and then the second electroformed layer 300 and the third electroformed layer 400 with a relatively thick thickness are formed in a thickening manner to obtain the reinforcing outer frame 120. Since the mask pattern 111 is formed on the first central portion 210 of the first electroformed layer 200, which is formed in advance and has a relatively thin thickness, the position, shape and aperture of the mask pattern 111 can be precisely controlled, which is helpful for improving the yield of the OLED display.

FIG. 10 is a flowchart of step S250 of a method for fabricating a fine metal mask according to one embodiment of the present invention. Referring to fig. 10, step S250 may further include: step S251 a: removing the first patterned photoresist layer, the second patterned photoresist layer and the third patterned photoresist layer, and covering the first protective film on one side of the third electroformed layer, the second electroformed layer and the first electroformed layer adjacent to the second electroformed layer; and step S252 a: and removing the metal layer and the glass substrate and covering the second protective film on the side of the first electroformed layer away from the second electroformed layer and the third electroformed layer to obtain a fine metal mask between the first protective film and the second protective film.

FIGS. 11A and 11B are schematic diagrams corresponding to steps S251A and S252a in FIG. 10. Referring to fig. 9C, 10, 11A and 11B, in step S250, the first patterned photoresist layer 600, the second patterned photoresist layer 610 and the third patterned photoresist layer 620 are removed to form a through hole 410, a through hole 310 and a mask pattern 111, and the first protective film 700 is covered on the third electroformed layer 400, the second electroformed layer 300 and the first electroformed layer 200 to seal one end of the through hole 410 away from the mask pattern 111 and the through hole 310 at a side adjacent to the second electroformed layer 300; in step S252, after the metal layer 500 and the glass substrate 510 are removed, the second protection film 710 covers a side of the first electroformed layer 200 away from the second electroformed layer 300 and the third electroformed layer 400, and an end of the mask pattern 111 away from the through hole 310 is closed, so that the fine metal mask 100 is obtained between the first protection film 700 and the second protection film 710. In addition, the first protective film 700 and the second protective film 710 may be, for example, a photo-curing stripper film, but not limited thereto.

In the method for manufacturing the fine metal mask of the present embodiment, the first protective film 700 and the second protective film 710 are covered on the fine metal mask 100, so that the fine metal mask 100 can be protected from dust or abrasion.

In summary, in the fine metal mask and the method for manufacturing the fine metal mask according to the embodiments of the invention, the reinforcing frame is connected to the outer edge of the central pattern portion, and the thickness of the reinforcing frame is greater than the thickness of the central pattern layer, so that the central pattern portion can be kept flat and not easily bent during use or transportation, and the mask pattern can be accurately aligned to the predetermined position of the organic light emitting material layer after being used for multiple times, thereby facilitating improvement of yield of the OLED display. And the fine metal mask is made by adopting an electroforming process, so that the position of the mask pattern is accurate, the aperture precision can reach a plurality of microns, and the problems of sewage treatment and etching liquid management of an etching process are solved.

Although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims. Furthermore, the terms "first," "second," and the like, as used herein, are used merely to name elements (elements) or to distinguish between different embodiments or ranges, and are not used to limit upper or lower limits on the number of elements.

Claims

1. A fine metal mask, comprising a central pattern portion and a reinforcing frame; the central pattern part has a mask pattern, the reinforced frame is connected to one outer edge of the central pattern part, the thickness of the reinforced frame is greater than that of the central pattern part, and the fine metal mask is produced through electroforming process.

2. The fine metal mask of claim 1, wherein the central pattern portion further comprises a first central portion of a first electroformed layer on which the mask pattern is formed, and the reinforcing bezel further comprises a first peripheral portion of the first electroformed layer adjacent to the first central portion and a second electroformed layer stacked on the first peripheral portion, a via hole formed between the second electroformed layer and the first central portion, the via hole communicating with the mask pattern.

3. The fine metal mask of claim 2, wherein the reinforcing bezel further comprises a third electroformed layer, the second electroformed layer further comprises a second central portion and a second peripheral portion, the second peripheral portion being adjacent to the second central portion, the third electroformed layer being stacked on the second peripheral portion, a through hole being formed between the third electroformed layer and the second central portion, the through hole communicating with the through hole.

4. The fine metal mask of claim 1, wherein the fine metal mask is made of a material selected from the group consisting of: iron, cobalt, nickel, and alloys of at least two of the foregoing.

5. A method of fabricating a fine metal mask, comprising:

sputtering to form a metal layer on a glass substrate; and

electroforming a central pattern part and a reinforced outer frame on the metal layer, and removing the metal layer and the glass substrate to obtain the fine metal mask;

the reinforcing frame is connected to one outer edge of the central pattern part, the central pattern part has one mask pattern, the reinforcing frame has thickness greater than that of the central pattern part, and the fine metal mask includes the central pattern part and the reinforcing frame.

6. The method of claim 5, wherein the electroforming step of forming the central pattern portion and the strengthening frame on the metal layer and removing the metal layer and the glass substrate to obtain the fine metal mask further comprises:

forming a first patterned photoresist layer on the metal layer, wherein the first patterned photoresist layer exposes a first predetermined electroforming surface of the metal layer;

electroforming a first electroformed layer on the first predetermined electroformed surface, wherein the first electroformed layer has a first central portion and a first peripheral portion adjacent to the first central portion, the first central portion is connected to the first patterned photoresist layer, and the first peripheral portion has a second predetermined electroformed surface;

forming a second patterned photoresist layer on the first central portion and the first patterned photoresist layer, wherein the second patterned photoresist layer exposes the second predetermined electroforming surface;

electroforming a second electroformed layer on the second predetermined electroforming surface; and

removing the first patterned photoresist layer, the second patterned photoresist layer, the metal layer and the glass substrate to obtain the fine metal mask;

the first patterned photoresist layer is removed to form the mask pattern on the first central portion, the second patterned photoresist layer is removed to form a through hole between the second electroformed layer and the first central portion, the through hole is communicated with the mask pattern, the central pattern portion further comprises the first central portion of the first electroformed layer, and the reinforced outer frame further comprises the first peripheral portion of the first electroformed layer and the second electroformed layer.

7. The method of claim 6, wherein the second electroformed layer further has a second central portion and a second peripheral portion adjacent to the second central portion, the second central portion being coupled to the second patterned photoresist layer, the second peripheral portion having a third predetermined electroformed surface;

the electroforming step of forming a central pattern portion and a strengthening outer frame on the metal layer and removing the metal layer and the glass substrate to obtain the fine metal mask further comprises: forming a third patterned photoresist layer exposing the third predetermined electroforming surface on the second central portion and the second patterned photoresist layer; and electroforming a third electroformed layer on the third predetermined electroformed surface; and

the step of removing the first patterned photoresist layer, the second patterned photoresist layer, the metal layer and the glass substrate to obtain the fine metal mask further comprises: removing the first patterned photoresist layer, the second patterned photoresist layer, the third patterned photoresist layer, the metal layer and the glass substrate to obtain the fine metal mask, wherein the third patterned photoresist layer is removed to form a through hole between the third electroformed layer and the second central portion, the through hole is communicated with the through hole, and the strengthening outer frame further comprises the third electroformed layer.

8. The method of claim 6, wherein the step of removing the first patterned photoresist layer, the second patterned photoresist layer, the metal layer and the glass substrate to obtain the fine metal mask further comprises:

removing the first patterned photoresist layer and the second patterned photoresist layer and covering a first protective film on the second electroformed layer and one side of the first electroformed layer adjacent to the second electroformed layer; and

and removing the metal layer and the glass substrate and covering a second protective film on the side of the first electroformed layer away from the second electroformed layer to obtain the fine metal mask between the first protective film and the second protective film.

9. The method of claim 7, wherein the step of removing the first patterned photoresist layer, the second patterned photoresist layer, the third patterned photoresist layer, the metal layer and the glass substrate to obtain the fine metal mask further comprises:

removing the first patterned photoresist layer, the second patterned photoresist layer and the third patterned photoresist layer and covering a first protective film on the third electroformed layer, the second electroformed layer and one side of the first electroformed layer adjacent to the second electroformed layer; and

and removing the metal layer and the glass substrate and covering a second protective film on one side of the first electroformed layer, which is far away from the second electroformed layer and the third electroformed layer, so as to obtain the fine metal mask between the first protective film and the second protective film.

10. The method of claim 7, wherein the fine metal mask is made of a material selected from the group consisting of: iron, cobalt, nickel, and alloys of at least two of the foregoing.