JP2022067159A - Vapor deposition mask unit and method for producing the same - Google Patents

Abstract

To provide a vapor deposition mask unit having a plurality of openings precisely disposed thereon, and a method for producing the same.SOLUTION: A vapor deposition mask unit 100 has a first metal layer 112, a second metal layer 114, and a frame 120a, 120b on the first metal layer. The first metal layer has a plurality of first openings 112a. The second metal layer lies on the first metal layer, is in contact with the first metal layer, and has a plurality of second openings 114a. The frame lies on the first metal layer. Part of the frame extends in regions between adjacent two first openings and between adjacent two second openings, and overlaps the first metal layer in the regions. At least one of the plurality of first openings overlaps one of the plurality of second openings.SELECTED DRAWING: Figure 4

Description

One of the embodiments of the present invention relates to a vapor deposition mask unit and a method for manufacturing the same.

Semiconductor elements such as display elements and memory elements are structures in which thin films containing various materials such as insulators, semiconductors, and conductors are laminated on an insulating substrate or a semiconductor substrate, and these thin films are appropriately patterned and connected. And the function as a semiconductor element is exhibited. A vacuum vapor deposition method can be mentioned as one of the methods for forming a thin film. In this method, the material is sublimated or evaporated (hereinafter, sublimation and evaporation are collectively referred to as vaporization) by heating the material under a high vacuum to generate vapor of the material. At this time, a vapor deposition mask is used to selectively deposit the material in the region where the thin film is formed (hereinafter referred to as the vapor deposition region). The vapor deposition mask has a plurality of openings for allowing the vapor of the material to pass through, and by performing vapor deposition in a state where the openings and the vapor deposition region are overlapped, the vapor of the material is selectively solidified and deposited on the vapor deposition region. (See Patent Document 1).

Japanese Unexamined Patent Publication No. 2017-210633

One of the objects of the embodiment of the present invention is to provide a vapor deposition mask unit and a method for manufacturing the same. For example, one of the embodiments of the present invention is to provide a vapor deposition mask unit having a plurality of precisely arranged openings and a method for manufacturing the same.

One of the embodiments of the present invention is a vapor deposition mask unit. The vapor deposition mask unit comprises a first metal layer, a second metal layer, and a frame on the first metal layer. The first metal layer has a plurality of first openings. The second metal layer is located on the first metal layer, is in contact with the first metal layer, and has a plurality of second openings. The frame is located on the first metal layer. A portion of the frame extends a region between two adjacent first openings and between two adjacent second openings and overlaps the first metal layer in this region. At least one of the plurality of first openings overlaps with one of the plurality of second openings.

One of the embodiments of the present invention is a method for manufacturing a vapor deposition mask unit. In this manufacturing method, a first metal layer is formed on a support substrate, a frame is arranged on the first metal layer, and a second metal layer having a plurality of second openings is a first metal. A plurality of first metal layers are formed by forming on the layer, peeling the support substrate from the first metal layer, and irradiating the first metal layer with a laser beam from the opposite side to the second metal layer. It involves forming an opening in the first metal layer. The formation of the plurality of first openings is performed so that at least one of the plurality of first openings overlaps with one of the plurality of second openings.

Schematic top view and side view of the vapor deposition apparatus to which the vapor deposition mask unit according to one of the embodiments of the present invention can be applied. The schematic top view of the vapor deposition mask unit which concerns on one of the Embodiments of this invention. The schematic top view of the vapor deposition mask unit which concerns on one of the Embodiments of this invention. Schematic cross-sectional view of the vapor deposition mask unit according to one of the embodiments of the present invention. Schematic top view and sectional view of the vapor deposition mask unit according to one of the embodiments of the present invention. Schematic cross-sectional view of the vapor deposition mask unit according to one of the embodiments of the present invention. Schematic cross-sectional view of the vapor deposition mask unit according to one of the embodiments of the present invention. The schematic cross-sectional view which shows the method of manufacturing the vapor deposition mask unit which concerns on one of the Embodiments of this invention. The schematic cross-sectional view which shows the method of manufacturing the vapor deposition mask unit which concerns on one of the Embodiments of this invention. The schematic cross-sectional view which shows the method of manufacturing the vapor deposition mask unit which concerns on one of the Embodiments of this invention. The schematic cross-sectional view which shows the method of manufacturing the vapor deposition mask unit which concerns on one of the Embodiments of this invention. The schematic cross-sectional view which shows the method of manufacturing the vapor deposition mask unit which concerns on one of the Embodiments of this invention.

Hereinafter, each embodiment of the present invention will be described with reference to the drawings and the like. However, the present invention can be carried out in various embodiments without departing from the gist thereof, and is not construed as being limited to the description contents of the embodiments exemplified below.

The drawings may schematically represent the width, thickness, shape, etc. of each part as compared with the actual embodiment in order to clarify the explanation, but the drawings are merely examples and limit the interpretation of the present invention. It's not something to do. In the present specification and each figure, elements having the same functions as those described with respect to the above-mentioned figures may be designated by the same reference numerals and duplicate description may be omitted.

In the present specification and the scope of patent claims, when expressing an aspect of arranging another structure on one structure, when the term "above" is simply used, the structure shall be used unless otherwise specified. It includes both the case where another structure is placed directly above the structure so as to be in contact with each other and the case where another structure is placed above one structure via another structure.

Hereinafter, the expression "a structure is exposed from another structure" means that a part of one structure is not covered by another structure, and is covered by another structure. The missing part also includes an aspect covered by yet another structure.

Hereinafter, the vapor deposition mask unit 100 and the manufacturing method thereof according to one of the embodiments of the present invention will be described.

1. 1. The thin-film deposition apparatus The thin-film deposition mask unit 100 can be used to selectively form a film in a vapor-deposited region when a metal, an organic compound, an inorganic compound, or a film in which these are mixed is formed by a vapor deposition method. 1 (A) and 1 (B) show a schematic top view and a side view of a typical thin-film deposition apparatus used for film formation by thin-film deposition. The vapor deposition apparatus is composed of a plurality of chambers having various functions. One of the chambers is the vapor deposition chamber 150 shown in FIG. 1 (A), and the vapor deposition chamber 150 is partitioned from the adjacent chamber by a load lock door 152, and the inside is in a high vacuum decompression state or is inert such as nitrogen and argon. It is configured to remain filled with gas. Therefore, a decompression device (not shown), a gas intake / exhaust mechanism, and the like are connected to the vapor deposition chamber 150.

The thin-film deposition chamber 150 provides a space in which a film-forming object such as a substrate can be stored. In the example shown in FIGS. 1 (A) and 1 (B), the vapor deposition source 154 is arranged under the substrate 170, and the vapor deposition source 154 is filled with the material to be vapor-deposited. The material is heated and vaporized in the vapor deposition source 154, and when the vapor of the material reaches the surface of the substrate 170 through the opening (described later) of the vapor deposition mask unit 100, it is cooled and solidified, and the material is deposited and deposited on the substrate 170 (described later). In FIG. 1B, a film of the material is provided on the lower surface of the substrate 170). In the example shown in FIG. 1 (A), the vapor deposition source 154 (also referred to as a linear source) which has a substantially linear shape and is arranged along one side of the substrate 170 is provided, but the vapor deposition source 154 Can have any shape, and may be a so-called point source vapor deposition source 154 that overlaps the center of gravity of the substrate 170. In the case of a point source, the relative positions of the substrate 170 and the vapor deposition source 154 are fixed, and a mechanism for rotating the substrate 170 may be provided.

When a linear source type vapor deposition source 154 is used, the vapor deposition chamber 150 is configured such that the substrate 170 and the vapor deposition source 154 move relative to each other. FIG. 1A shows an example in which the vapor deposition source 154 is fixed and the substrate 170 moves on it. As shown in FIG. 1 (B), the vapor deposition chamber 150 is further provided with a holder 160 for holding the substrate 170 and the vapor deposition mask unit 100, a moving mechanism 158 for moving the holder 160, a shutter 156, and the like. The holder 160 maintains the positional relationship between the substrate 170 and the vapor deposition mask unit 100, and the moving mechanism 158 allows the substrate 170 and the vapor deposition mask unit 100 to move on the vapor deposition source 154. The shutter 156 is provided on the vapor deposition source 154 in order to shield the vapor of the material or allow the material to reach the substrate 170, and the opening and closing is controlled by a control device (not shown). Although not shown, the vapor deposition chamber 150 is provided with a sensor for monitoring the vapor deposition rate of the material, a protective plate for preventing contamination by the material, a pressure gauge for monitoring the pressure in the vapor deposition chamber 150, and the like.

2. 2. Thin-film mask unit FIG. 2 is a schematic top view of the thin-film mask unit 100, and an enlarged view of a part of FIG. 2 is shown in FIG. The schematic views of the above are shown in FIGS. 4 (A) and 4 (B), respectively. As shown in these figures, the vapor deposition mask unit 100 includes a vapor deposition mask 110 and a frame 120 provided on the vapor deposition mask 110 as a basic configuration. The vapor deposition mask 110 is located on the first metal layer 112 as well as the first metal layer 112 and includes a second metal layer 114 in contact with the first metal layer 112 (FIGS. 4A and 4B). )).

2-1. First Metal Layer The first metal layer 112 has a plurality of openings (hereinafter, first openings) 112a. The first opening 112a is an opening that determines the vapor deposition region, and the material passing through the first opening 112a is solidified and deposited on a film forming object such as a substrate, whereby a thin film of the material is formed. The thickness of the first metal layer 112 is appropriately selected from the range of, for example, 0.5 μm or more and 10 μm or less, 1 μm or more and 5 μm or less, or 1 μm or more and 3 μm or less. The first metal layer 112 includes a metal selected from zero-valent metals such as nickel, iron, cobalt, copper, titanium and chromium, or an alloy containing at least one of these metals. The first metal layer 112 may further contain carbon. The first metal layer 112 may have a single-layer structure or may be composed of a plurality of layers containing different materials. For example, the first metal layer 112 may have a laminated structure of a layer containing titanium and a layer containing nickel.

2-2. Second Metal Layer The second metal layer 114 also has a plurality of openings (hereinafter, second openings) 114a. In the example shown in FIGS. 3 to 4B, one first opening 112a is provided for one second opening 114a, and one first opening 112a and one second opening 114a are provided with each other. The first opening 112a and the second opening 114a are arranged so as to overlap each other. The area of the first opening 112a may be smaller than the area of the second opening 114a, and the area of each of the plurality of first openings 112a may be smaller than the area of any of the second openings 114a. Therefore, one second opening 114a surrounds at least one or all sides constituting at least one first opening 112a. In other words, the entire first opening 112a overlaps with the second opening 114a. Therefore, a part of the first metal layer 112 is exposed from the second opening 114a, and a step 113 exists between the first metal layer 112 and the second metal layer 114 (FIG. 4B). ).

The number of the first opening 112a and the number of the second opening 114a do not necessarily have to be the same, and the former may be larger than the latter. For example, a schematic top view of the vapor deposition mask unit 100 shown in FIG. 5 (A) and a schematic cross-sectional view taken along the chain lines CC'and DD' in FIG. 5 (A) (FIGS. 5B and 5). As shown in (C)), a plurality of first openings 112a are provided for one second opening 114a, and one second opening 114a overlaps with the plurality of first openings 112a. One opening 112a and a second opening 114a may be arranged. The number of the first openings 112a overlapping the one second opening 114a may be 2 or 4 or more.

The thickness of the second metal layer 114 may be the same as or greater than the thickness of the first metal layer 112, and may be appropriately selected from the range of, for example, 5 μm or more and 200 μm or less, 5 μm or more and 100 μm or less, or 10 μm or more and 100 μm or less. .. By forming the second metal layer 114 with a thickness larger than that of the first metal layer 112, the bending of the first metal layer 112 and the resulting change in the position of the first opening 112a are prevented, and more precise. The first opening 112a can be placed above the vapor deposition area. The second metal layer 114 also contains a metal selected from zero-valent metals such as nickel, iron, cobalt, copper, titanium and chromium or an alloy containing at least one of these metals and further contains carbon. You may. The composition of the first metal layer 112 and the second metal layer 114 may be the same or different.

2-3. Frame As shown in FIGS. 4 (A) and 4 (B), the frame 120 is provided so as to be in contact with the second metal layer 114, whereby the vapor deposition mask 110 is fixed to the frame 120. The frame 120 has a function of providing strength to prevent the vapor deposition mask 110 from being deformed, and the shape of the vapor deposition mask 110 is maintained by the frame 120, and the deformation of the vapor deposition mask 110 and the resulting first opening 112a and second opening The position change of 114a is prevented. As a result, the first opening 112a and the second opening 114a can be precisely arranged so as to overlap the vapor deposition region. The frame 120 also contains a zero-valent metal, and the metal is selected from nickel, iron, cobalt, chromium, manganese and the like. For example, the frame 120 may be an alloy containing iron and chromium, an alloy containing iron, nickel and manganese, and the alloy may contain carbon. The thickness of the frame 120 may be larger than that of the first metal layer 112 and the second metal layer 114, and is appropriately selected from the range of, for example, 0.5 mm or more and 1 cm or less or 1 mm or more and 5 mm or less.

As shown in FIG. 2, the frame 120 includes an outer frame 120a that surrounds all the first openings 112a and the second openings 114a. The outer frame 120a is arranged along the outer circumference of the vapor deposition mask 110 (FIG. 4A).

As an arbitrary configuration, the frame 120 may include an inner frame 120b integrated with the outer frame 120a (see FIG. 2). The inner frame 120b, which is a part of the frame 120, is provided so as to extend the region between the adjacent first openings 112a and between the adjacent second openings 114a (FIG. 4B). The inner frame 120b is surrounded by the outer frame 120a, and the area surrounded by the outer frame 120a is divided into a plurality of areas (windows). This structure increases the strength of the outer frame 120a, which contributes to the prevention of deformation of the vapor deposition mask unit 100. When vapor deposition is performed on a large substrate, the length of one side of the outer frame 120a may exceed 3 m. Therefore, by providing the inner frame 120b, bending of the vapor deposition mask unit 100 is effectively prevented, and the first opening 112a and the second opening 114a can be precisely arranged on the vapor deposition region on the large substrate. ..

As shown in FIGS. 4A and 4B, the frame 120 can be provided so as to overlap the first metal layer 112 and the second metal layer 114. That is, the frame 120 may be arranged so that the second metal layer 114 is sandwiched between the first metal layer 112 and the frame 120. In this case, the entire bottom surface of the inner frame 120b may overlap with the first metal layer 112 and the second metal layer 114.

Alternatively, as shown in FIGS. 6 (A) and 6 (B), the frame 120 may be in contact with the first metal layer 112. Also in this case, the frame 120 may be arranged so that the entire bottom surface of the inner frame 120b overlaps with the first metal layer 112. The second metal layer 114 is provided so as to be in contact with the upper surface of the first metal layer 112 and the side surface of the frame 120. In other words, the bottom surface and the side surface of the frame 120 are in contact with the first metal layer 112 and the second metal layer 114, respectively.

Alternatively, as shown in FIGS. 7 (A) and 7 (B), an adhesive layer 122 in contact with the frame 120 and the first metal layer 112 may be provided. The adhesive layer 122 may contain, for example, a photocurable or thermosetting acrylic adhesive, an epoxy adhesive, or the like. Also in this case, the frame 120 can be arranged so that the entire bottom surface of the inner frame 120b overlaps with the first metal layer 112. Further, the second metal layer 114 is provided so as to be in contact with the upper surface of the first metal layer 112 and the side surface of the frame 120. The side surface of the adhesive layer 122 may be in contact with the second metal layer 114, whereby the adhesive layer 122 is sealed by the first metal layer 112, the second metal layer 114, and the frame 120, and the adhesive layer 122 is formed. It is possible to obtain a structure that is not exposed to the outside. When the adhesive layer 122 is sealed, when the vapor deposition mask unit 100 is washed with a cleaning liquid such as an organic solvent or water, the adhesive layer 122 is prevented from swelling due to the cleaning liquid, and the volume change and the decrease in adhesive strength due to the swelling are prevented. Don't invite me. Therefore, it is possible to prevent changes in the shape of the vapor deposition mask unit 100 and the arrangement of the first opening 112a and the second opening 114a. Further, since the adhesive layer 122 can be prevented from melting, the vapor deposition mask unit 100 can be prevented from being contaminated.

When vapor deposition is performed using the vapor deposition mask unit 100, the vapor deposition mask unit 100 and the film forming target are arranged so that the vapor deposition region and the first opening 112a overlap. The vapor deposition mask unit 100 is arranged so that the first metal layer 112 is closer to the film forming target than the second metal layer 114. The vapor of the material passes through the second opening 114a and the first opening 112a in sequence, and the material is deposited on the vapor deposition region. When a film is formed by vapor deposition on each of a plurality of pixels provided in the display area of the display device, the vapor deposition mask unit 100 is arranged so that the plurality of first openings 112a overlap with the pixel electrodes of the display device. As will be described later, the first opening 112a of the vapor deposition mask 110 can be precisely provided at a position corresponding to the target vapor deposition region. Therefore, even when a plurality of thin-film deposition regions are arranged at very small intervals, it is possible to selectively form a film on the thin-film deposition regions. This contributes to the improvement of the manufacturing yield of the electronic device manufactured through the vapor deposition process such as the organic electroluminescence display device, and makes it possible to reduce the manufacturing cost of the electronic device.

3. 3. Method for Manufacturing a Vapor Deposition Mask Unit An example of a method for manufacturing a vapor deposition mask unit 100 will be described with reference to FIGS. 8 (A) to 19 (C). These figures are schematic cross-sectional views of the vapor deposition mask unit 100 and correspond to FIG. 4 (B).

3-1. Formation of thin-film deposition mask First, a first metal layer 112 is formed on an insulating support substrate 140 (FIG. 8 (A)). Examples of the insulating support substrate 140 include a glass substrate, a quartz substrate, and a plastic substrate containing polyimide, polyamide, polycarbonate, or polyester such as polyethylene terephthalate. Preferably, a material having a high transmittance for laser light, which will be described later, is used. The first metal layer 112 is formed on the entire surface or almost the entire surface of the support substrate 140 without forming a resist mask on the support substrate 140 by a sputtering method, a chemical vapor deposition (CVD) method, or a plating method (electrolytic plating method, no electroless plating method). The first metal layer 112 is formed by using an electrolytic plating method) or the like. When the electrolytic plating method is used, a seed layer containing a metal such as titanium, nickel, chromium, copper, gold, or an alloy thereof is formed by a sputtering method or a CVD method, and then seeded in a plating solution. The first metal layer 112 may be formed by supplying power to the layer. As the plating solution, an aqueous electrolyte solution containing a nickel salt such as nickel sulfate or nickel chloride can be used.

After that, the second metal layer 114 is formed. As an example of the method of forming the second metal layer 114, a resist mask 142 is formed in a region (non-opening portion) other than the region forming the second opening 114a (FIG. 8B), and then in the plating solution. The first metal layer 112 is fed with the metal layer 112, and the second metal layer 114 is grown by an electrolytic plating method (FIG. 8 (C)). The resist mask 142 may be formed by applying a photosensitive resist, curing by exposure through a photomask, and developing, which is performed by general photolithography. The resist mask 142 is exposed through a photomask so that, for example, a negative resist is applied onto the first metal layer 112 and the region forming the second opening 114a is selectively exposed. Alternatively, a positive resist is applied onto the release layer 130 and exposed via a photomask so that the non-openings are selectively exposed. Then, development is performed to obtain a patterned resist mask 142. The resist may be liquid, or a film-like photoresist called a resist film may be used. The thickness of the resist mask 142 is preferably larger than the thickness of the second metal layer 114.

After the growth of the second metal layer 114 is completed, the resist mask 142 is removed by etching with a stripping solution and / or ashing. As a result, a second metal layer 114 having a plurality of second openings 114a is formed (FIG. 8 (C)). Although not shown, an unpatterned metal layer is formed on the first metal layer 112 by a sputtering method, a CVD method, or the like, and the metal layer is patterned by lithography to form a second metal layer 114. You may.

3-2. Arrangement and fixing of the frame After that, the frame 120 is arranged as shown in FIG. 9A. The frame 120 is arranged so as to be in contact with the second metal layer 114 and so that the inner frame 120b extends a region between adjacent second openings 114a. After that, the first metal layer 112 is irradiated with laser light from the support substrate 140 side (see the arrow in FIG. 9A). Specifically, the laser beam is irradiated to the region where the inner frame 120b and the first metal layer 112 overlap with each other via the support substrate 140. The type of laser light is not limited, and laser light oscillated from a laser such as a YAG laser, a fiber laser, a semiconductor laser, a carbon dioxide gas laser, a helium / neon laser, an excimer laser, or an argon laser can be used. The shape of the beam of the laser beam is not limited, and may have a point shape, a linear shape, or a two-dimensional shape such as a circle or a quadrangle. The second metal layer 114 and the frame 120 are welded (laser welded) by the heat given by the laser beam and fixed to each other.

Subsequently, the support substrate 140 is peeled off from the first metal layer 112 (FIG. 9B). The support substrate 140 may be peeled off physically or chemically. In the latter case, a glass substrate is used as the support substrate 140, and a resist having high resistance to hydrofluoric acid such as polyimide is used to protect the first metal layer 112, the second metal layer 114, and the frame 120. The support substrate 140 may be dissolved with an acid.

3-3. Formation of the first opening After that, the first metal layer 112 is irradiated with a laser beam to form the first opening 112a (FIG. 9B). Specifically, the first metal layer 112 is irradiated with laser light from the side opposite to the second metal layer 114, and a part of the first metal layer 112 is removed (laser ablation) by the energy of the laser light. The type of laser light is not limited, and laser light oscillated from a laser such as a YAG laser, a fiber laser, a semiconductor laser, a carbon dioxide gas laser, a helium / neon laser, an excimer laser, or an argon laser can be used. As described above, the first metal layer 112 is formed so as to have a relatively small film thickness. Therefore, a part of the first metal layer 112 can be quickly removed by irradiation with the laser beam to form the first opening 112a (FIG. 9C). Laser ablation may be performed by irradiating a desired region of the first metal layer 112 with a laser from one or a plurality of laser ejection ports and sequentially moving the irradiation points (FIGS. 9 (C) and 9 (FIG. 9). D)).

3-4. Other Manufacturing Method of Thin Film Deposition Mask Unit The manufacturing method of the thin film deposition mask unit 100 is not limited to the above-mentioned method. For example, as the support substrate 140, a metal substrate containing a metal such as copper, aluminum, titanium, iron, nickel, cobalt, chromium, molybdenum, manganese, or an alloy containing a metal selected from these can be used. In this case, as shown in FIG. 10A, it is preferable to form the release layer 130 on the support substrate 140. The release layer 130 is a functional layer for promoting the release of the vapor deposition mask unit 100 formed on the support substrate 140 from the support substrate 140, and for example, a metal thin film such as nickel, molybdenum, or tungsten can be used. .. The release layer 130 may be formed by using a plating method, a sputtering method, or a CVD method so as to have a thickness of, for example, 20 μm or more and 200 μm or less, or 40 μm or more and 150 μm or less.

Subsequently, without forming a resist mask on the support substrate 140, the first metal layer 112 is formed on the entire surface or almost the entire surface of the support substrate 140 by using a sputtering method, a CVD method, a plating method, or the like. 112 is formed (FIG. 10 (B)). When the electrolytic plating method is used, the release layer 130 is used as a seed layer, and the release layer 130 can be fed in the plating solution to form the first metal layer 112. When the release layer 130 is not used, the support substrate 140 may be fed to form the first metal layer 112.

After that, the frame 120 is arranged on the first metal layer 112. The frame 120 is arranged so as to be in contact with the first metal layer 112. At this time, the magnet 144 may be arranged under the support substrate 140. The position of the frame 120 can be stabilized by the magnetic force generated by the magnet 144 (FIG. 10 (C)).

Subsequently, the second metal layer 114 is formed. The method for forming the second metal layer 114 is the same as that described above, and the resist mask 142 is formed in the non-opening portion (FIG. 11 (A)), and then the first metal layer 112 is fed with the plating solution. , The second metal layer 114 can be grown by electroplating (FIG. 11B). The resist mask 142 may be formed by applying a photosensitive resist, curing by exposure through a photomask, and developing, which is performed by general photolithography. At this time, the resist mask 142 may also be formed on the frame 120. This prevents the second metal layer 114 from being formed on the frame 120.

After the growth of the second metal layer 114 is completed, the resist mask 142 is removed by etching with a stripping solution and / or ashing. As a result, a second metal layer 114 having a plurality of second openings 114a is formed (FIG. 11 (B)). Although not shown, an unpatterned metal layer is formed on the first metal layer 112 by a sputtering method, a CVD method, or the like, and the metal layer is patterned by lithography to form a second metal layer 114. You may.

Subsequent processes are similar to those described above. That is, the support substrate 140 is peeled off from the first metal layer 112, and then laser ablation is performed on the region forming the first opening 112a (FIG. 11 (C)). Laser ablation may be performed by irradiating a desired region of the first metal layer 112 with a laser from one or a plurality of laser ejection ports and sequentially moving the irradiation points (FIGS. 11 (C) and 11 (FIG. 11)). D)). By the above process, the vapor deposition mask unit 100 having the structure shown in FIGS. 6 (A) and 6 (B) can be manufactured.

When the adhesive layer 122 is used, a glass substrate, a quartz substrate, or a plastic substrate is used as the support substrate 140, and the first metal layer 112 is formed on the support substrate 140 (FIG. 8 (A)), and then. An adhesive that provides the adhesive layer 122 may be applied to the first metal layer 112, and the frame 120 may be provided on the first metal layer 112 (FIG. 12 (A)). On the other hand, when the metal substrate is used as the support substrate 140, the release layer 130 and the first metal layer 112 are sequentially formed on the support substrate 140 (FIG. 10B), and then the adhesive is applied to the first metal layer. It may be applied to 112 and a frame 120 may be provided on it (FIG. 12 (B)). Subsequent processes are similar to those described above, with the formation of the resist mask 142, the formation of the second metal layer 114, the removal of the resist mask 142, the peeling of the support substrate 140 and the peeling layer 130, and the first by laser ablation. The opening 112a is made.

As described above, in the method for manufacturing the vapor deposition mask unit 100 according to one of the embodiments of the present invention, after fixing the vapor deposition mask 110 and the frame 120, the first opening 112a is arranged so as to correspond to the vapor deposition region. The support substrate 140 is peeled off from the vapor deposition mask unit 100 before forming. Since a physical force is applied to the vapor deposition mask 110 and the frame 120 when the support substrate 140 is peeled off, the vapor deposition mask unit 100 after peeling, particularly the vapor deposition mask 110, is deformed by the applied force. The resulting stress can remain. However, even if such stress remains, since the first opening 112a is formed by laser ablation after the deformation of the vapor deposition mask 110, its position (coordinates) is not affected by the deformation at the time of peeling, and the residual stress is not affected. Does not change with. Therefore, the vapor deposition mask unit 100 according to one of the embodiments of the present invention can be provided with an opening precisely arranged at a position corresponding to the vapor deposition region, which improves the film formation accuracy in the vapor deposition process. Contribute. This is an advantage as compared with the step of peeling off the support substrate after forming the opening (first opening 112 in the vapor deposition mask unit 100) that defines the vapor deposition region. This is because when the support substrate is peeled off after the opening is formed, the position of the opening changes due to the deformation of the vapor deposition mask 100 or the residual stress due to the peeling, and the opening is precisely arranged on the vapor deposition region. This is because it will not be possible.

Further, the vapor deposition mask 110 of the vapor deposition mask unit 100 is a laminated body of two metal layers (first metal layer 112 and second metal layer 114), and the vapor deposition mask 110 contains an organic compound such as a resin. not. Therefore, it is possible to suppress the occurrence of defects caused by foreign substances generated by the decomposition of the organic compound by the laser irradiation when forming the first opening 112a.

Each of the above-described embodiments of the present invention can be appropriately combined and carried out as long as they do not contradict each other. Further, a process to which a person skilled in the art appropriately adds, omits, or changes the conditions based on the production method of each embodiment is also included in the scope of the present invention as long as the gist of the present invention is provided.

Of course, other effects different from those brought about by the embodiments described above, which are obvious from the description of the present specification or which can be easily predicted by those skilled in the art, will naturally occur. It is understood that it is brought about by the present invention.

100: Thin-film mask unit, 110: Thin-film mask, 112: First metal layer, 112a: First opening, 113: Step, 114: Second metal layer, 114a: Second opening, 120: Frame, 120a : Outer frame, 120b: Inner frame, 122: Adhesive layer, 130: Peeling layer, 140: Support substrate, 142: Resist mask, 144: Magnet, 150: Evaporation chamber, 152: Load lock door, 154: Evaporation source, 156 : Shutter, 158: Moving mechanism, 160: Holder, 170: Substrate

Claims (20)

A first metal layer with a plurality of first openings,
A second metal layer located on the first metal layer, in contact with the first metal layer and having a plurality of second openings, and a frame on the first metal layer.
A portion of the frame extends a region between two adjacent first openings and between two adjacent second openings and overlaps the first metal layer in the region.
A vapor deposition mask unit in which at least one of the plurality of first openings overlaps with one of the plurality of second openings. The vapor deposition mask unit according to claim 1, wherein the number of the plurality of first openings is the same as the number of the plurality of second openings. The vapor deposition mask unit according to claim 2, wherein the area of each of the plurality of first openings is smaller than the area of any of the plurality of second openings. The vapor deposition mask unit according to claim 1, wherein at least one of the plurality of second openings overlaps with two or more of the first openings. The vapor deposition mask unit according to claim 1, wherein the frame is located on the second metal layer and is in contact with the second metal layer. The vapor deposition mask unit according to claim 5, wherein the frame overlaps with the second metal layer in the region. The vapor deposition mask unit according to claim 5, wherein the second metal layer is sandwiched between the first metal layer and the frame. The vapor deposition mask unit according to claim 1, wherein the frame is in contact with the first metal layer. The vapor deposition mask unit according to claim 8, wherein the bottom surface and the side surface of the frame are in contact with the first metal layer and the second metal layer, respectively. The vapor deposition mask unit according to claim 1, further comprising an adhesive layer between the first metal layer and the frame. The vapor deposition mask unit according to claim 10, wherein the bottom surface and the side surface of the frame are in contact with the adhesive layer and the second metal layer, respectively. Forming a first metal layer on a support substrate,
Placing the frame on the first metal layer,
Forming a second metal layer having a plurality of second openings on the first metal layer,
The plurality of first openings are made by peeling the support substrate from the first metal layer and irradiating the first metal layer with a laser beam from the side opposite to the second metal layer. Including forming on the first metal layer
A method for manufacturing a vapor deposition mask unit, wherein the formation of the plurality of first openings is performed so that at least one of the plurality of first openings overlaps with one of the plurality of second openings. 12. The irradiation of the laser beam to the first metal layer is performed so that the area of each of the plurality of first openings is smaller than the area of any of the plurality of second openings. The manufacturing method described in. The manufacturing method according to claim 12, wherein the irradiation of the first metal layer with the laser beam is performed so that at least one of the plurality of second openings overlaps with two or more of the first openings. .. The formation of the second metal layer is performed so that the second metal layer is in contact with the first metal layer.
The manufacturing method according to claim 12, wherein the arrangement of the frame is performed so that the frame comes into contact with the second metal layer after the formation of the second metal layer. 12. The manufacturing method according to claim 12, wherein the arrangement of the frame is performed so that the frame is in contact with the first metal layer before the formation of the second metal layer. The manufacturing method according to claim 16, wherein the formation of the second metal layer is performed so that the second metal layer is in contact with the side surface of the frame and the first metal layer. Further comprising forming an adhesive layer in contact with the first metal layer on the first metal layer.
The arrangement of the frame is performed so that after the formation of the adhesive layer, the adhesive layer is sandwiched between the first metal layer and the frame.
The manufacturing method according to claim 12, wherein the formation of the second metal layer is performed so that the side surface of the frame is in contact with the first metal layer. The manufacturing method according to claim 12, wherein the formation of the first metal layer is performed by an electrolytic plating method. The manufacturing method according to claim 12, wherein the formation of the second metal layer is performed by an electrolytic plating method.

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